WO2020022544A1 - Lampe de véhicule utilisant un dispositif électroluminescent à semi-conducteur - Google Patents

Lampe de véhicule utilisant un dispositif électroluminescent à semi-conducteur Download PDF

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Publication number
WO2020022544A1
WO2020022544A1 PCT/KR2018/008641 KR2018008641W WO2020022544A1 WO 2020022544 A1 WO2020022544 A1 WO 2020022544A1 KR 2018008641 W KR2018008641 W KR 2018008641W WO 2020022544 A1 WO2020022544 A1 WO 2020022544A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
vehicle lamp
semiconductor light
emitting device
insulating member
Prior art date
Application number
PCT/KR2018/008641
Other languages
English (en)
Korean (ko)
Inventor
강용대
이도형
김우태
이현호
Original Assignee
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Publication of WO2020022544A1 publication Critical patent/WO2020022544A1/fr

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/141—Light emitting diodes [LED]
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S43/00—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights
    • F21S43/10—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source
    • F21S43/13—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source characterised by the type of light source
    • F21S43/14—Light emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2102/00—Exterior vehicle lighting devices for illuminating purposes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Definitions

  • the present invention relates to a vehicle lamp, and more particularly to a vehicle lamp using a semiconductor light emitting device.
  • the vehicle is equipped with various vehicle lamps having an illumination function and a signal function.
  • halogen lamps or gas discharge lamps have been mainly used, but in recent years, light emitting diodes (LEDs) have attracted attention as light sources of vehicle lamps.
  • LEDs light emitting diodes
  • a light emitting diode itself, not a package, is a semiconductor light emitting device that converts current into light, and is being developed as a light source for display images of electronic devices including information communication devices.
  • the vehicle lamps developed to date use a packaged light emitting diode, so that the yield is not good and expensive, and the degree of flexibility is weak.
  • the phosphor sheet contains a large amount of expensive phosphors and takes a large part in the manufacturing cost.
  • the present invention provides a method for manufacturing a vehicle lamp mill vehicle lamp that can reduce the manufacturing cost in a vehicle lamp including a semiconductor light emitting device.
  • An object of the present invention is to provide a vehicle lamp and a method for manufacturing the vehicle lamp that the manufacturing cost of the vehicle lamp including the semiconductor light emitting device is reduced.
  • a vehicle lamp including a light source unit for emitting light, comprising: a base substrate; An insulation member structure disposed on the base substrate; A semiconductor light emitting device assembled on the base substrate and disposed between the insulating member structures; And a fluorescent layer formed of a resin including a phosphor formed to surround the semiconductor light emitting device, wherein the fluorescent layer fills a gap between the insulating member structures.
  • the insulating member structure has a first surface and a second surface disposed facing each other up and down, the first surface is bonded to the base substrate, the second surface is the area of the first surface It is formed narrower than that characterized in that the inclined surface toward the semiconductor light emitting device is formed.
  • the resin of the fluorescent layer is characterized in that formed of a thermosetting material.
  • the content of the phosphor per 100 parts by weight of the fluorescent layer is characterized in that more than 50 parts by weight.
  • the method of manufacturing a vehicle lamp comprising the steps of: disposing an insulating member structure and a semiconductor light emitting element on the base substrate; Filling the gap between the insulation member structures with a resin including a phosphor to form an uncured phosphor layer; And thermosetting the uncured fluorescent layer at a predetermined temperature to form a fluorescent layer.
  • the step of forming the uncured fluorescent layer is characterized in that the screen printing to fill the gap between the insulating member structure with a resin containing a phosphor.
  • the predetermined temperature of the step of forming the fluorescent layer is characterized in that the range of 120 to 190 °C.
  • the vehicle lamp and the manufacturing method according to the present invention comprising a semiconductor light emitting device between the insulating member structure disposed on the base substrate, and includes a fluorescent layer for filling the gap between the insulating member structure while surrounding the semiconductor light emitting device. Therefore, it is possible to reduce the manufacturing cost of the vehicle lamp because it has the effect of reducing the consumption of expensive phosphors.
  • FIG. 1A is a conceptual diagram illustrating a rear lamp as an embodiment of a vehicle lamp.
  • FIG. 1B is an enlarged view illustrating a state in which the rear lamp of FIG. 1A emits light.
  • FIG. 2 is a perspective view for explaining a light source unit of a vehicle lamp according to the present invention.
  • FIG. 3 is a cross-sectional view of the light source unit of the vehicle lamp illustrated in FIG. 2 as viewed from the A-A plane.
  • FIG. 4 is a cross-sectional view showing another embodiment of a vehicle lamp including a light source unit according to the present invention.
  • FIG. 5 is a cross-sectional view illustrating a method of manufacturing a vehicle lamp having a light source unit according to the present invention.
  • Vehicle lamps described herein may include headlights (headlamps), taillights, traffic lights, fog lights, turn signals, brake lights (brake lamps), emergency lights, reversing lights (tail lamps), and the like.
  • headlights headlamps
  • taillights traffic lights
  • fog lights turn signals
  • brake lights brake lights
  • emergency lights reversing lights
  • tail lamps and the like.
  • the configuration according to the embodiments described herein may be applied to a new product form that will be developed later, as long as the device can emit light.
  • FIG. 1A is a conceptual diagram illustrating a rear lamp as an example of a vehicle lamp
  • FIG. 1B is an enlarged view illustrating a state in which the rear lamp of FIG. 1A is emitted.
  • rear lamps 100 of a vehicle are disposed at both sides of a rear surface of a vehicle, thereby forming a rear exterior of the vehicle.
  • the rear lamp 100 may be a lamp in which a tail lamp, a direction indicator lamp, a brake lamp, an emergency lamp, and a tail lamp are combined in a package form. That is, the rear lamp 100 includes a plurality of lamps that selectively emit light under the control of the vehicle.
  • At least one of the plurality of lamps may be formed to emit a predetermined shape.
  • the brake lamp 100a is elongated in the horizontal direction, and is curved to be curved in at least a portion of the brake lamp 100a so as to emit light corresponding to the shape of the brake lamp 100a.
  • the brake lamp may be bent toward the front of the vehicle.
  • Such a complex shape having a three-dimensional shape may be implemented by a plurality of light emitting regions.
  • light emitting regions having different shapes are combined with each other to realize the predetermined shape.
  • a light source unit 1000 implemented by a semiconductor light emitting device may be disposed in the light emitting area.
  • the light source unit 1000 may be fixed to the vehicle body through a frame, and the frame may be a base substrate for disposing the light source unit 1000.
  • the light source portion can be a flexible light source portion that can be bent, twisted, foldable, rollable, which can be bent by an external force.
  • the light source unit may be implemented as a surface light source having a light emitting surface corresponding to the light emitting area.
  • the light source unit 1000 may be provided in plural and disposed in each of the light emitting regions, or one light source unit may be formed to implement the entire shape.
  • the pixel of the light source unit 1000 may be implemented by a semiconductor light emitting device.
  • the present invention exemplifies a light emitting diode (LED) as one type of semiconductor light emitting device for converting current into light.
  • the light emitting diode may be a semiconductor light emitting device having a size of several micrometers to several tens of micrometers, and thus may serve as a pixel in the three-dimensional space.
  • the light source unit according to the present invention a plurality of semiconductor light emitting elements disposed on one surface of the substrate, an insulating member formed to surround the semiconductor light emitting element, the semiconductor light emitting element It may be configured to include a first electrode and a second electrode that is electrically connected to any part of the insulating member disposed on one surface of the insulating member.
  • the present invention is to provide a method for manufacturing a vehicle lamp and a vehicle lamp in which the manufacturing cost is reduced by reducing the consumption of expensive phosphors in the manufacture of a vehicle lamp in the vehicle lamp, more specifically, in conjunction with the accompanying drawings, Take a look.
  • FIG. 2 is a perspective view illustrating a light source unit of a vehicle lamp according to the present invention
  • FIG. 3 is a cross-sectional view of the light source unit of the vehicle lamp as seen in FIG.
  • the light source unit 1000 of the vehicle lamp includes a base substrate 1010, an insulating member structure 1020, a semiconductor light emitting device 1030, a fluorescent layer 1040, and an optical film 1050. It may include.
  • the base substrate 1010 may be formed of various materials, and may be made flexible or inflexible.
  • the base substrate 1010 may include glass or polyimide (PI).
  • PI polyimide
  • any material such as polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) may be used as long as it is an insulating and flexible material.
  • a first electrode and a second electrode (not shown) formed to be connected to the semiconductor light emitting device 1030 may be disposed on one surface of the base substrate 1010. Through this, the first electrode and the second electrode and the semiconductor light emitting device 150 may be electrically connected.
  • first electrode and the second electrode and the semiconductor light emitting device 1030 may be physically contacted with an adhesive (not shown) having conductivity to form an electrical connection.
  • the adhesive may be formed of a metal paste (silver paste, tin paste) and solder. The enumeration of the adhesive is merely illustrative and the present invention is not limited thereto.
  • the insulating member structure 1020 may be disposed on the base substrate 1010.
  • the soft member structure 1020 may be formed in a film shape and attached to the base substrate 1010 so that an opening may be formed in a region where the semiconductor light emitting device 1030 is disposed.
  • the opening may be referred to as a gap between the insulating member structures 1020.
  • the insulating member structure 1020 may be made of a polymer resin, preferably may be formed of polycarbonate (PC).
  • the insulating member structure 1020 may be formed of a material having high reflectivity to improve the luminous efficiency of the light source unit 1000 while serving as a partition wall between the plurality of semiconductor light emitting devices 1030.
  • the insulating member structure 1020 may include particles to reflect light emitted from the semiconductor light emitting device 1030 to improve the light emitting efficiency of the light source unit (1000).
  • the particles may be titanium oxide (TiO 2 ) particles.
  • the semiconductor light emitting device 1030 may have a size of several micrometers to several tens of micrometers.
  • the semiconductor light emitting device 1030 may be assembled on the base substrate 1010 and disposed between the insulating member structures 1020.
  • the semiconductor light emitting device 1030 includes a first conductive electrode, a first conductive semiconductor layer on which the first conductive electrode is formed, an active layer formed on the first conductive semiconductor layer, and a second conductive type formed on the active layer.
  • the semiconductor layer may include a second conductive electrode formed on the second conductive semiconductor layer.
  • the first conductive electrode and the first conductive semiconductor layer may be p-type electrodes and p-type semiconductor layers, respectively, and the second conductive electrode and second conductive semiconductor layer may be n-type electrodes and n-type, respectively. It can be a semiconductor layer.
  • the present invention is not necessarily limited thereto, and an example in which the first conductive type is n-type and the second conductive type is p-type is also possible.
  • the fluorescent layer 1040 may be formed to surround the semiconductor light emitting device 1030. In addition, the fluorescent layer 1040 may be formed to fill a gap between the insulating member structures 1020.
  • the fluorescent layer 1040 may be formed of a resin including a phosphor.
  • the phosphor may include a YAG: Ce-based phosphor to convert light of a semiconductor light emitting device emitting blue light into white light.
  • the phosphor may be formed of a red phosphor and a green phosphor to convert blue light into another color.
  • the resin for forming the fluorescent layer 1040 may be formed of a thermosetting material.
  • the resin may be formed of a silicone resin.
  • the silicone resin is a resin containing siloxane bonds (Si-O bonds) in which silicon and oxygen are alternated in a molecular structure.
  • the phosphor in the phosphor layer 1040 may be formed in an amount of 50 parts by weight or more. That is, the content of the phosphor per 100 parts by weight of the fluorescent layer 1040 may be 50 parts by weight or more.
  • the color temperature and color conversion according to the phosphor can be sufficiently made. That is, when the content of the phosphor is less than 50 parts by weight of the total weight of the fluorescent layer 1040, the color conversion of the light emitted from the semiconductor light emitting device 1030 may not be sufficient.
  • the light emitted from the semiconductor light emitting device 1030 is a color conversion is performed through the fluorescent layer 1040, the optical film 1050 may be further disposed to obtain a uniform light to the emission surface.
  • the optical film 1050 may include a diffusion plate 1051, an optical sheet 1052, and a liquid crystal display (LCD) 1053. That is, the vehicle lamp 1000 may be formed by disposing the optical film 1050 on which the diffusion plate 1051, the optical sheet 1052, and the liquid crystal display device 1053 are stacked on the semiconductor light emitting device 1030.
  • the diffusion plate 1051 may be formed as a translucent plate that diffuses light emitted from a point light source along a surface so that color and brightness are uniformly displayed on the entire screen.
  • the optical sheet 1052 is formed of any one of a high brightness film or a composite sheet is formed so that high quality light can be emitted to the light emitting surface.
  • FIG. 4 is a cross-sectional view showing another embodiment of a vehicle lamp including a light source unit according to the present invention.
  • the light source unit of the vehicle lamp may differ from the structure of the insulating member structure 1020a so that more light is emitted from the semiconductor light emitting device 1030 to the light emitting surface.
  • the insulating member structure 1020a has opposing first and second surfaces disposed up and down with each other, the first surface being bonded to the base substrate 1010, and the second and second surfaces being the second surface. It may be formed narrower than the area of.
  • the cross section of the insulating member structure 1020a may be formed in the shape of a trapezoid as shown. That is, the insulating member structure 1020a may be formed as an inclined surface facing the semiconductor light emitting device 1030. Accordingly, since the light emitted from the semiconductor light emitting device 1030 may be reflected on the inclined surface, the light emission efficiency may be further increased than the vehicle lamp of FIG. 3.
  • FIG. 5 is a cross-sectional view illustrating a method of manufacturing a vehicle lamp having a light source unit according to the present invention.
  • FIG. 5 a method of manufacturing a vehicle lamp having a light source unit according to the present disclosure follows FIGS. 5A and 5B.
  • the insulating member structure 1020 and the semiconductor light emitting device 1030 are disposed on a base substrate, and the gap between the insulating member structures 1020 is filled with a resin 1040 ′′ including a phosphor.
  • a step of forming the uncured fluorescent layer 1040 ' is shown.
  • the insulating member structure 1020 and the semiconductor light emitting device 1030 may be disposed on the base substrate 1010.
  • the arrangement order of the insulating member structure 1020 and the semiconductor light emitting device 1030 may be changed for convenience. That is, the insulating member structure 1020 may be disposed on the base substrate 1010, and then the semiconductor light emitting device 1030 may be disposed. In another embodiment, an embodiment in which the semiconductor light emitting device 1030 is disposed on the base substrate 1010 and then the insulating member structure 1020 is disposed.
  • the semiconductor light emitting device 1030 may be positioned between the insulating member structures 1020, and a gap is formed between the insulating member structures 1020.
  • a resin 1040 "including a paste-shaped phosphor may be applied to the screen mask 10 including the masking part 11 and the opening 12.
  • the squeegee 20 may be applied.
  • the non-cured fluorescent layer 1040 ′ may be formed by injecting a resin 1040 ′′ including a phosphor into the gap between the insulating member structures 1020 by closely moving the screen mask 10. That is, the uncured phosphor layer 1040 ′ may be formed by screen printing.
  • the resin 1040 ′′ including the phosphor may have an appropriate viscosity that may be filled by screen printing between the insulating member structures 1020.
  • the uncured fluorescent layer 1040 ′ may be thermally cured at a predetermined temperature to form the fluorescent layer 1040.
  • the predetermined temperature may be in a range of 120 to 190 ° C. in which the resin 1040 ′′ including the phosphor may be sufficiently cured.
  • the thermosetting temperature of the uncured fluorescent layer 1040 ′ exceeds 190 ° C.
  • the insulating member Deformation of the structure 1020 may be caused, that is, forming the fluorescent layer 1040 may cause the base substrate 1010 or the insulating member structure 1020 to heat up while the uncured fluorescent layer 1040 'is sufficiently cured. It can be carried out in a temperature range that is not deformed by.
  • the vehicle lamp using the semiconductor light emitting device described above is not limited to the configuration and method of the above-described embodiments, the above embodiments may be configured by selectively combining all or some of the embodiments so that various modifications may be made. It may be.
  • the present invention relates to a vehicle lamp, and in particular, can be used in the vehicle lamp industry using semiconductor light emitting devices.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

La présente invention concerne une lampe de véhicule ayant une unité de source de lumière pour émettre de la lumière, la lampe de véhicule comprenant : un substrat de base; des structures d'élément isolant disposées sur le substrat de base; des dispositifs électroluminescents à semi-conducteur assemblés sur le substrat de base et disposés entre les structures d'élément isolant; et des couches fluorescentes constituées d'une résine comprenant un corps fluorescent, pour englober les dispositifs électroluminescents à semi-conducteur, les couches fluorescentes remplissant des espaces entre les structures d'élément isolant.
PCT/KR2018/008641 2018-07-23 2018-07-30 Lampe de véhicule utilisant un dispositif électroluminescent à semi-conducteur WO2020022544A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2018-0085510 2018-07-23
KR1020180085510A KR20200010890A (ko) 2018-07-23 2018-07-23 반도체 발광소자를 이용한 차량용 램프

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WO2020022544A1 true WO2020022544A1 (fr) 2020-01-30

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WO (1) WO2020022544A1 (fr)

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KR20230126104A (ko) 2022-02-22 2023-08-29 국민대학교산학협력단 비대면 온라인 기반의 학습자 수준 맞춤형 수학 코딩 교육 장치 및 방법

Citations (5)

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Publication number Priority date Publication date Assignee Title
KR101130688B1 (ko) * 2010-05-12 2012-04-02 한국광기술원 방열구조 ｌｅｄ 패키지 및 그 제조방법
KR20130043433A (ko) * 2011-10-20 2013-04-30 엘지이노텍 주식회사 발광 모듈 및 이를 포함하는 해드 램프
JP5302117B2 (ja) * 2009-06-22 2013-10-02 スタンレー電気株式会社 発光装置の製造方法、発光装置および発光装置搭載用基板
KR20150048979A (ko) * 2013-10-28 2015-05-11 주식회사 루멘스 발광 소자 패키지, 백라이트 유닛, 조명 장치 및 발광 소자 패키지 제작 방법
KR20170071154A (ko) * 2015-12-15 2017-06-23 현대자동차주식회사 광원 모듈 및 이를 이용한 차량용 헤드 램프

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5302117B2 (ja) * 2009-06-22 2013-10-02 スタンレー電気株式会社 発光装置の製造方法、発光装置および発光装置搭載用基板
KR101130688B1 (ko) * 2010-05-12 2012-04-02 한국광기술원 방열구조 ｌｅｄ 패키지 및 그 제조방법
KR20130043433A (ko) * 2011-10-20 2013-04-30 엘지이노텍 주식회사 발광 모듈 및 이를 포함하는 해드 램프
KR20150048979A (ko) * 2013-10-28 2015-05-11 주식회사 루멘스 발광 소자 패키지, 백라이트 유닛, 조명 장치 및 발광 소자 패키지 제작 방법
KR20170071154A (ko) * 2015-12-15 2017-06-23 현대자동차주식회사 광원 모듈 및 이를 이용한 차량용 헤드 램프

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