WO2020015102A1 - 偏振无关的分束器 - Google Patents
偏振无关的分束器 Download PDFInfo
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- WO2020015102A1 WO2020015102A1 PCT/CN2018/105141 CN2018105141W WO2020015102A1 WO 2020015102 A1 WO2020015102 A1 WO 2020015102A1 CN 2018105141 W CN2018105141 W CN 2018105141W WO 2020015102 A1 WO2020015102 A1 WO 2020015102A1
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- refractive
- index film
- polarization
- beam splitter
- film layer
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
Definitions
- the invention relates to the field of optical communication, in particular to a polarization-independent beam splitter.
- the polarization-independent beam splitter is formed by alternately stacking three or more refractive index dielectric films or metal films due to the depolarization design.
- High-refractive-index coatings are usually made of different oxides, such as TiO2, Nb2O5, Ta2O5, and their mixtures.
- Medium-refractive-index coatings are usually made of Al 2 O 3 and oxide mixtures (Al x Pr y O z , Al x La y O z , Al x Ta y O z, etc.), the low refractive index film layer usually adopts SiO 2 , MgF 2 , metal Ag and the like.
- a polarization-independent beam splitter made of a metal film and a dielectric film mixedly plated is far inferior to a hard dielectric oxide film due to its extremely poor reliability and low service life.
- polarization-independent beam splitters based on hard dielectric oxide films because the refractive index spans of these three types of materials are not large, often require a large number of layers, it is difficult to control the accuracy of the coating, the plating is difficult, and the yield is low.
- the ideal measures are to reduce the number of layers, reduce the total coating thickness, and better the large-angle depolarization performance.
- One way is to increase the refractive index span of the depolarization design.
- a material with a higher refractive index than the conventional oxide in the wavelength range of 800 mm to 4000 nm is used.
- the material In addition to having a high refractive index, the material must also have a low extinction coefficient in the wavelength range of 800nm to 4000nm in order to improve the reflectance in the use band range.
- the object of the present invention is to provide a polarization-independent beam splitter that is reliable in implementation, convenient in preparation, and capable of improving the reflectance in the use band range.
- a polarization-independent beam splitter includes a substrate, and the substrate has a plurality of high-refractive-index film layers, a middle-refractive-index film layer, and a low-refractive-index film layer that are alternately stacked.
- the material of the high-refractive-index film layer is a mixture of SiH, SiO x H y or SiO x H y SiH and of.
- the substrate is formed of a silicon dioxide material.
- the material of the medium refractive index film layer is one of Nb 2 O 5 , Ta 2 O 5 , Al 2 O 3 , Al x Pr y O z , Al x La y O z , Al x Ta y O z At least one mixture.
- the material of the low-refractive-index film layer is at least one mixture of SiO 2 and MgF 2 .
- the refractive index of the high-refractive index film layer in the wavelength range of 800 to 4000 nm is greater than 3.
- the high-refractive-index film layer has a Xiaoguang coefficient of less than 0.0005 in a wavelength range of 800 to 4000 nm.
- the plurality of high-refractive index film layers, the middle-refractive index film layer and the low-refractive index film layer are alternately stacked symmetrically or asymmetrically on the substrate.
- the substrate material of the present invention is a glass material based on silicon dioxide material, a high refractive index film layer made of a SiH / SiO x H y mixture, and Nb 2 O 5 , Ta 2 O 5, Al 2 O 3, Al x Pr y O z, Al x La y O z, Al x Ta y O z blend of at least one film layer and the refractive index of SiO 2, MgF 2 at least
- a mixed low-refractive-index film layer is symmetrically or asymmetrically and alternately stacked into a film system on a substrate.
- Each SiH / SiO x H y layer (that is, a high-refractive-index film layer) is in a wavelength range of 800 nm to 4000 nm.
- the refractive indices are all greater than 3, and the extinction coefficients in the wavelength range of 800nm to 4000nm are all less than 0.0005.
- the entire film is partially overlapped in the wavelength range of 800nm to 4000nm to achieve low absorption and polarization-independent beam splitter NPBS at various angles at large angles, making this solution also applicable to interferometers, imaging instruments, testing instruments, and data Center, comb filter (Interleaver) of optical communication and other fields.
- FIG. 1 is a schematic diagram of an embodiment of the present invention
- FIG. 2 is a schematic diagram of a second embodiment of the present invention.
- Embodiment 1 or 2 of the present invention is a schematic diagram of Embodiment 1 or 2 of the present invention.
- FIG. 4 is a relationship diagram between transmittance and wavelength at 51.5 degrees +/- 3 degrees in Example 1;
- FIG. 5 is a diagram showing the relationship between the transmittance of 45 degrees in glass and the reflectance and wavelength in Example 2;
- FIG. 6 is a measurement data of transmittance and reflectance of two samples of P and S polarization states in Example 2;
- FIG. 7 is measurement data of polarization-dependent loss in Example 2.
- the present invention includes a substrate 1 having a plurality of high-refractive-index film layers 2, a medium-refractive-index film layer 3, and a low-refractive-index film layer that are alternately stacked.
- the substrate 1 is formed of a silicon dioxide material; and the material of the medium refractive index film layer 2 is Nb 2 O 5 , Ta 2 O 5 , Al 2 O 3 , Al x Pr y O z , Al At least one mixture of x La y O z and Al x Ta y O z ; the material of the low-refractive index film layer 3 is at least one mixture of SiO 2 and MgF 2 .
- FIG. 1 is one of the schematic diagrams of the asymmetrical stacking.
- Figure 2 is one of the schematic diagrams showing symmetrical stacking.
- the material of the substrate 1 is a glass material based on a silicon dioxide material, and a high refractive index film layer 2 made of a mixture of SiH / SiO x H y , Nb 2 O 5 , Ta 2 O 5 , Al 2 O 3, Al x Pr y O z, Al x La y O z, Al x Ta y O z blend of at least one film layer 3 and the refractive index of SiO 2, MgF 2 prepared by mixing at least one
- the low-refractive-index film layer 4 formed on the substrate 1 is symmetrically or asymmetrically and alternately stacked into a film system, so that each SiH / SiO x H y layer (that is, a high-refractive-index film layer) is in a wavelength range of 800 nm to 4000 nm.
- the refractive indices are all greater than 3, and the extinction coefficients in the wavelength range of 800nm to 4000nm are all less than 0.0005.
- the entire film is partially overlapped in the wavelength range of 800nm to 4000nm to achieve low absorption and polarization-independent beam splitter NPBS at various angles at large angles.
- This solution can also be applied to interferometers, imaging instruments, and detection instruments. , Data center, comb filter (Interleaver) of optical communication and other fields.
- This embodiment is an embodiment in which the high refractive index film layer, the medium refractive index film layer, and the low refractive index film layer are stacked asymmetrically on the substrate, as shown in FIG. 3, incident at 51.5 degrees +/- 3 degrees Under the conditions, it has a depolarization effect in the range of 820-880nm, and its structure includes 11 layers of three films.
- the stacking order is shown in the following table:
- the material of the high refractive index film layer is SiH, and the refractive index near 850 nm is 3.22.
- the material of the middle refractive index film layer is Ta 2 O 5 , and the refractive index near 850 nm is 2.112.
- the material of the low-refractive-index film layer was SiO 2 , and the refractive index near 850 nm was 1.484.
- the base material is ordinary K9 optical glass.
- the polarization-free beam splitter of this embodiment can satisfy the polarization-free light at a large angle of 51.5 degrees +/- 3 degrees; and a hard medium coating film is sputtered. And it can meet the reliability requirements of friction resistance, high temperature and high humidity resistance of communication and automotive products;
- FIG. 4 is a relationship diagram between the transmittance and wavelength of 51.5 degrees +/- 3 degrees in this embodiment.
- This embodiment is one embodiment in which high-refractive-index film layers, medium-refractive-index film layers, and low-refractive-index film layers are symmetrically and alternately stacked on a substrate. See FIG. 3, which has a depolarization effect in the range of 1510nm-1580nm. Its structure consists of 9 layers of three symmetrically stacked films. The outer layer of the film is made of glass.
- the stacking order is shown in the following table:
- the material of the high refractive index film layer is SiH, and the refractive index near 1550 nm is 3.7.
- the material of the middle refractive index film layer is Ta 2 O 5 , and the refractive index near 1550 nm is 2.089.
- the material of the low refractive index film layer is SiO 2 , and the refractive index near 1550 nm is 1.47.
- the base material is ordinary K9 optical glass.
- the film is made of 9 layers of three materials which are completely symmetrically stacked.
- This implementation has the following beneficial effects:
- This implementation of the polarization-free beam splitter strictly uses a symmetric film system, and the absolute value of the phase delay difference between the S component and the P component of the reflected light minus the phase delay difference between the S and P components of the transmitted light is theoretically 0 degrees ;
- Using sputtering hard dielectric coating And it can meet the reliability requirements of friction resistance, high temperature and high humidity resistance of communication and automotive products;
- Figure 5 is the relationship between the transmittance of 45 degrees in glass and the reflectance and wavelength in this example;
- Figure 6 is an example Measurement data of the transmittance and reflectance of the sample to two polarization states of P and S;
- FIG. 7 is the measurement data of the polarization-dependent loss of the sample of this example.
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Abstract
一种偏振无关的分束器,包括基片(1),基片(1)上具有多个高折射率膜层(2)、中折射率膜层(3)和低折射率膜层(4)交替堆叠而成的膜系,高折射率膜层(2)的材料为SiH、SiO xH y或SiH与SiO xH y的混合物。该分束器可应用于干涉仪,成像仪器,检测仪器,数据中心,光通讯的梳状滤波器等领域,其中,有至少与800nm至4000nm波长范围部分重叠的通带,每个SiH/SiO xH y层在800nm至4000nm波长范围内折射率均大于3,在800nm至4000nm波长范围内的消光系数均小于0.0005,整个膜系在800nm至4000nm波长范围内部分重叠,实现低吸收,实现大角度下各种分光比的偏振无关的分束器。
Description
本发明涉及光通讯领域,尤其是偏振无关的分束器。
常规情况下,偏振无关的分束器,由于消偏振设计需要三种或三种以上的折射率介质膜或者金属膜交替堆叠形成。高折射率膜层通常采用不同氧化物形成,例如TiO2、Nb2O5、Ta2O5及它们的混合物,中折射率膜层通常采用Al
2O
3及氧化物混合物(Al
xPr
yO
z、Al
xLa
yO
z、Al
xTa
yO
z等),低折射率膜层通常采用SiO
2、MgF
2,金属Ag等。金属膜和介质膜混合镀制的偏振无关分束器,由于其极差的可靠性,使用寿命低,远远不如硬介质氧化膜。然而,基于硬介质氧化膜的偏振无关分束器,由于这三类材料的折射率跨度不大,常常需要非常多的膜层,难于控制镀膜的精度,镀制的难度大,成品率低。
为了提高偏振无关分束器的性能,理想的措施是减少层数,减少总涂层厚度以及更好的大角度消偏性能。一种方式是,提高消偏设计的折射率跨度,对于高折射率膜层,采用在800mm至4000nm波长范围上折射率高于常规氧化物的材料。除具备较高的折射率之外,该材料还必须在800nm至4000nm的波长范围上具备低的消光系数,以提高使用波段范围的反射率。
发明内容
针对现有技术的情况,本发明的目的在于提供一种实施可靠、制备便利且能够提高使用波段范围反射率的偏振无关的分束器。
为了实现上述的技术目的,本发明采用的技术方案为:
偏振无关的分束器,包括基片,基片上具有多个高折射率膜层、中折射率膜层和低折射率膜层交替堆叠而成的膜系,所述高折射率膜层的材料为SiH、SiO
xH
y或SiH与SiO
xH
y的混合物。
进一步,所述的基片为二氧化硅材料成型。
进一步,所述的中折射率膜层的材料为Nb
2O
5、Ta
2O
5、Al
2O
3、Al
xPr
yO
z、Al
xLa
yO
z、Al
xTa
yO
z中的至少一种混合物。
进一步,所述的低折射率膜层的材料为SiO
2、MgF
2中的至少一种混合物。
进一步,所述的高折射率膜层在800~4000nm波长范围内的折射率均大于3。
进一步,所述的高折射率膜层在800~4000nm波长范围内的晓光系数均小于0.0005。
进一步,所述的多个高折射率膜层、中折射率膜层和低折射率膜层在基片上对称或非对称交替堆叠。
采用上述的技术方案,本发明的有益效果为:本发明的基片材料为基于二氧化硅材料的玻璃材料,采用SiH/SiO
xH
y混合物制成的高折射率膜层,Nb
2O
5、Ta
2O
5、Al
2O
3、Al
xPr
yO
z、Al
xLa
yO
z、Al
xTa
yO
z至少一种混合制成的中折射率膜层和SiO
2、MgF
2至少一种混合制成的低折射率膜层在基片上进行对称或者非对称且交替堆叠成膜系,每个SiH/SiO
xH
y层(即高折射率膜层)在800nm至4000nm波长范围内折射率均大于3,在800nm至4000nm波长范围内的消光系数均小于0.0005。整个膜系在800nm至4000nm波长范围内部分重叠,实现低吸收,实现大角度下各种分光比的偏振无关分束器NPBS,使得该方案还可以应用于干涉仪,成像仪器,检测仪器,数据中心,光通讯的梳状滤波器(Interleaver)等领域。
下面结合附图和具体实施方式对本发明做进一步的阐述:
图1为本发明的实施方式之一的示意图;
图2为本发明的实施方式之二的示意图;
图3为本发明的实施例1或2的简要示意图;
图4为实施例1在51.5度+/-3度的透射率和波长的关系图;
图5为实施例2在玻璃内45度的透射率与反射率和波长的关系图;
图6为实施例2样品对P和S两种偏振态的透射率和反射率的测量数据;
图7为实施例2的偏振相关损耗的测量数据。
下面结合实施例对发明做进一步描述。
如图1或2所示,本发明包括基片1,基片上具有多个高折射率膜层2、中折射率膜层3和低折射率膜4层交替堆叠而成的膜系,所述高折射率膜层2的材料为SiH、SiO
xH
y或SiH与SiO
xH
y的混合物。
其中,所述的基片1为二氧化硅材料成型;所述的中折射率膜层2的材料为 Nb
2O
5、Ta
2O
5、Al
2O
3、Al
xPr
yO
z、Al
xLa
yO
z、Al
xTa
yO
z中的至少一种混合物;所述的低折射率膜层3的材料为SiO
2、MgF
2中的至少一种混合物。
另外,所述的多个高折射率膜层2、中折射率膜层3和低折射率膜层4在基片上对称或非对称交替堆叠,其中图1所示为非对称堆叠的示意图之一,图2为所示为对称堆叠的示意图之一。
本发明采用上述的技术方案,其中基片1材料为基于二氧化硅材料的玻璃材料,采用SiH/SiO
xH
y混合物制成的高折射率膜层2,Nb
2O
5、Ta
2O
5、Al
2O
3、Al
xPr
yO
z、Al
xLa
yO
z、Al
xTa
yO
z至少一种混合制成的中折射率膜层3和SiO
2、MgF
2至少一种混合制成的低折射率膜层4在基片1上进行对称或者非对称且交替堆叠成膜系,使得每个SiH/SiO
xH
y层(即高折射率膜层)在800nm至4000nm波长范围内折射率均大于3,在800nm至4000nm波长范围内的消光系数均小于0.0005。另外,整个膜系在800nm至4000nm波长范围内部分重叠,实现低吸收,实现大角度下各种分光比的偏振无关分束器NPBS,使得该方案还可以应用于干涉仪,成像仪器,检测仪器,数据中心,光通讯的梳状滤波器(Interleaver)等领域。
实施例1
本实施例为高折射率膜层、中折射率膜层和低折射率膜层在基片上非对称交替堆叠的其中一种实施例,如图3所示,在51.5度+/-3度入射条件下,具有820-880nm范围内的消偏振效应,其结构包含11层由三种材料堆叠而成的膜系。
其中堆叠的层次顺序如下表所示:
高折射率膜层的材料为SiH,在850nm附近的折射率为3.22。
中折射率膜层的材料为Ta
2O
5,在850nm附近的折射率为2.112。
低折射率膜层的材料为SiO
2,在850nm附近的折射率为1.484。
基底材料为普通的K9光学玻璃。
本实施例的有益效果为:本实施例偏振无光分束器可以满足51.5度+/-3度大角度下的偏振无光;采用溅射的硬介质镀膜。并且可以满足通讯类、汽车类产品的耐摩擦、耐高温高湿的可靠性需求;图4为本实施例在51.5度+/-3度的透射率和波长的关系图。
实施例2
本实施例为高折射率膜层、中折射率膜层和低折射率膜层在基片上对称交替堆叠的其中一种实施例,参见图3,其具有1510nm-1580nm范围内的消偏振效应,其结构包含9层由三种材料完全对称堆叠而成的膜系,膜层外层皆为玻璃材质。
其中堆叠的层次顺序如下表所示:
高折射率膜层的材料为SiH,在1550nm附近的折射率为3.7。
中折射率膜层的材料为Ta
2O
5,在1550nm附近的折射率为2.089。
低折射率膜层的材料为SiO
2,在1550nm附近的折射率为1.47。
基底材料为普通的K9光学玻璃。
膜系由9层三种材料完全对称堆叠而成的。
本实施具有以下有益效果:本实施偏振无光分束器严格采用对称膜系,反射光S分量与P分量相位延迟差减去透射光S分量与P分量相位延迟差绝对值理论上为0度;采用溅射的硬介质镀膜。并且可以满足通讯类、汽车类产品的耐摩擦、耐高温高湿的可靠性需求;图5为本实施例在玻璃内45度的透射率与反射率和 波长的关系图;图6为本实例样品对P和S两种偏振态的透射率和反射率的测量数据;图7为本实例样品的偏振相关损耗的测量数据。
以上详细描述了本发明的较佳具体实施例。应当理解,本领域的普通技术无需创造性劳动就可以根据本发明的构思作出诸多修改和变化。因此,凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案,皆应在由权利要求书所确定的保护范围内。
Claims (9)
- 偏振无关的分束器,包括基片,基片上具有多个高折射率膜层、中折射率膜层和低折射率膜层交替堆叠而成的膜系,其特征在于:所述高折射率膜层的材料为SiH、SiO xH y或SiH与SiO xH y的混合物。
- 根据权利要求1所述的偏振无关的分束器,其特征在于:所述的中折射率膜层的材料为Nb 2O 5、Ta 2O 5、Al 2O 3、Al xPr yO z、Al xLa yO z、Al xTa yO z中的至少一种混合物。
- 根据权利要求1所述的偏振无关的分束器,其特征在于:所述的低折射率膜层的材料为SiO 2、MgF 2中的至少一种混合物。
- 根据权利要求1所述的偏振无关的分束器,其特征在于:所述的基片为二氧化硅材料成型。
- 根据权利要求1所述的偏振无关的分束器,其特征在于:所述的高折射率膜层在800~4000nm波长范围内的折射率均大于3。
- 根据权利要求1所述的偏振无关的分束器,其特征在于:所述的高折射率膜层在800~4000nm波长范围内的晓光系数均小于0.0005。
- 根据权利要求1所述的偏振无关的分束器,其特征在于:所述的多个高折射率膜层、中折射率膜层和低折射率膜层在基片上对称或非对称交替堆叠。
- 一种干涉仪,其特征在于:其包括权利要求8所述的偏振无关的分束器。
- 一种光通讯的梳状滤波器,其特征在于:其包括权利要求8所述的偏振无关的分束器。
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US20120212830A1 (en) * | 2011-02-23 | 2012-08-23 | Qioptiq Photonics GmbH | Nonpolarizing beam splitter |
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CN103713395A (zh) * | 2014-01-15 | 2014-04-09 | 福建福特科光电股份有限公司 | 红外消偏振分光器件 |
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CN107841712B (zh) * | 2017-11-01 | 2018-10-30 | 浙江水晶光电科技股份有限公司 | 高折射率氢化硅薄膜的制备方法、高折射率氢化硅薄膜、滤光叠层和滤光片 |
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