WO2020010899A1 - Light-emitting diode for plant growth - Google Patents

Light-emitting diode for plant growth Download PDF

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Publication number
WO2020010899A1
WO2020010899A1 PCT/CN2019/084580 CN2019084580W WO2020010899A1 WO 2020010899 A1 WO2020010899 A1 WO 2020010899A1 CN 2019084580 W CN2019084580 W CN 2019084580W WO 2020010899 A1 WO2020010899 A1 WO 2020010899A1
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Prior art keywords
phosphor
red
powder
blue light
phosphor powder
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PCT/CN2019/084580
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French (fr)
Chinese (zh)
Inventor
林金填
蔡金兰
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旭宇光电（深圳）股份有限公司
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Publication of WO2020010899A1 publication Critical patent/WO2020010899A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G9/00—Cultivation in receptacles, forcing-frames or greenhouses; Edging for beds, lawn or the like
    • A01G9/20—Forcing-frames; Lights, i.e. glass panels covering the forcing-frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

Definitions

  • the invention belongs to the field of semiconductor technology, and particularly relates to a light-emitting diode for plant growth.
  • Light environment is one of the important physical environmental factors indispensable for plant growth and development. It is an important technology to control various stages of plant growth and development through light quality regulation.
  • LED (light emitting diode) plant lights can also provide different "light fertilizers" according to the needs of the plant. While promoting the rapid growth of the plant, it can achieve high efficiency, high quality, increased yield, and no pollution. Studies have shown that blue light at 460 nm and red light at 660 nm have a greater effect on plant photosynthesis.
  • the purpose of the present invention is to provide a light-emitting diode for plant growth, which aims to solve the problems that the existing 660 nm fluorescent powder replaces the red light chip of plant lighting LED fluorescent powder with insufficient emission intensity and low light intensity.
  • the invention provides a light-emitting diode for plant growth, which includes a heat-dissipating substrate and an LED chip fixed on the surface of the heat-dissipating substrate.
  • the LED chip includes a first blue-light chip and a second blue-light arranged on the same surface of the heat-dissipating substrate in parallel A chip, and a first phosphor powder layer is disposed on a surface of the first blue light chip facing away from the heat dissipation substrate, and a second phosphor powder layer is provided on a surface of the second blue light chip facing away from the heat dissipation substrate, wherein,
  • the emission peak of the first blue light chip is in the range of 400-420nm, and the emission peak of the second blue light chip is in the range of 440-470nm;
  • the first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder.
  • the fluorooxide red powder is Mg4GeO5.5F: Mn
  • the nitride red powder is selected from the nitride red powder having a peak wavelength in the range of 610-670nm;
  • the second phosphor powder layer is a phosphor powder layer formed by a green phosphor, a second red phosphor, and a silica gel.
  • the optimal excitation wavelength of different types of phosphors is different, if a mixed phosphor powder layer is formed on a chip, the phosphors will be excited by different chip bands to form a light output. Due to the difference in output power, the light output of a specific band of phosphors will be caused Loss.
  • the light emitting diode for plant growth provided by the present invention is provided with a dual chip on a heat dissipation substrate, and different phosphor powder layers are formed on the surface of the dual chip, respectively. According to the difference in the excitation band of different types of specific phosphors, different specific band chips are used to selectively excite specific phosphors, which can maximize the light output and maximize the phosphor luminous effect.
  • the present invention uses a fluorooxide phosphor in combination with a nitride phosphor to form an emission peak at 400.
  • the first blue light chip in the -420nm range significantly increased the red light emission intensity at 660nm, and the photosynthetic photon flux was significantly improved.
  • the main reason is that the fluorooxide red powder used has a higher emission intensity than the nitride red powder when excited in a specific wavelength band, and its spectrum is narrow band.
  • the peak is located at about 660nm, the energy is more concentrated, and the emission intensity is significantly enhanced compared to the nitride phosphor. .
  • the use of narrow-band oxyfluoride red powder alone can increase the light quantum efficiency of the lamp beads, but the continuity of the spectrum is poor, which is difficult to meet for other wavelength bands required for plant growth; therefore, the fluorooxide red powder has a wavelength of 610-670nm in the present invention.
  • Nitride red powder is used in combination, and the two are used in combination, on the one hand, it can significantly increase the red light emission intensity at 660nm, which can effectively improve the light quantum efficiency of the product and meet the needs of plant growth; on the other hand, it can maintain the continuity of the plant growth spectrum And meet plant growth needs.
  • the present invention uses Mg 4 GeO 5.5 F: Mn as a red oxide of oxyfluoride, and is mixed with a red nitride powder having a wavelength in the range of 610-670 nm as a red phosphor of the first phosphor adhesive layer, and has the following advantages: Mg 4 GeO 5.5 F: Mn is a oxyfluoride red powder with the strongest excitation energy at 415nm. Its emission peak is located at 658nm with a narrow-band emission and high optical quantum efficiency. In addition, Mg 4 GeO 5.5 F: Mn is used as a fluorooxide red powder. Reliable and good, especially in high temperature and high humidity environment, it has good stability, can be used in high humidity plant growth environment, and is very suitable for plant lighting.
  • FIG. 1 is a schematic structural diagram of a light emitting diode for plant growth according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a comparison of excitation and emission spectra of a fluorooxide phosphor according to an embodiment of the present invention
  • FIG 3 is a schematic diagram of an excitation spectrum using a 730nm far red powder according to an embodiment of the present invention (monitoring wavelength: 730nm);
  • FIG. 4 is a schematic diagram of comparison of emission spectra (excitation wavelength: 415 nm) using a fluoronitride phosphor and a nitride phosphor according to an embodiment of the present invention.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality” is two or more, unless specifically defined otherwise.
  • an embodiment of the present invention provides a light emitting diode for plant growth, which includes a heat dissipation substrate 221 and an LED chip fixed on a surface of the heat dissipation substrate 221.
  • the LED chip includes side-by-side The first blue light chip 222 and the second blue light chip 224, and the surface of the first blue light chip 222 behind the discrete thermal substrate 221 is provided with a first phosphor adhesive layer 223, and the surface of the second blue light chip 224 behind the discrete thermal substrate 221 is provided with a second fluorescent light Powder glue layer 225,
  • the emission peak of the first blue light chip 222 is in the range of 400-420nm, and the emission peak of the second blue light chip 224 is in the range of 440-470nm;
  • the first phosphor powder layer 223 is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer 223 is a mixed fluorescence of a fluorooxide red powder and a nitride red powder.
  • the fluorooxide red powder is Mg4GeO 5.5 F: Mn
  • the nitride red powder is selected from nitride red powder having a peak wavelength in the range of 610-670nm;
  • the second phosphor powder layer 225 is a phosphor powder layer formed of a green phosphor, a second red phosphor, and silica gel.
  • the optimal excitation wavelength of different types of phosphors is different, if a mixed phosphor powder layer is formed on a chip, the phosphors will be excited by different chip bands to form a light output. Due to the difference in output power, the light output of a specific band of phosphors will be caused Loss.
  • the light emitting diodes for plant growth provided by the embodiments of the present invention are provided with dual chips having emission peaks at 400-420nm and 440-470nm respectively on the heat dissipation substrate, and different specific phosphor glue layers are formed on the surfaces of the dual chips, respectively.
  • the first phosphor powder layer is a phosphor powder layer formed by a first red phosphor powder and silica gel
  • the second phosphor powder layer is a phosphor powder layer formed by a green phosphor powder, a second red phosphor powder, and silica gel.
  • the embodiment of the present invention uses a fluorinated oxide phosphor with a nitride phosphor to form an emission peak.
  • the first blue light chip located in the range of 400-420nm significantly enhanced the red light emission intensity at 660nm, and the photosynthetic photon flux was significantly improved.
  • the main reason is that the fluorooxide red powder used has a higher emission intensity than the nitride red powder when excited in a specific wavelength band, and its spectrum is narrow band.
  • the peak is located at about 660nm, the energy is more concentrated, and the emission intensity is significantly enhanced compared to the nitride phosphor. .
  • the embodiment of the present invention uses this oxyfluoride red powder at a wavelength of 610
  • the combination of -670nm nitride red powder can be used on the one hand, which can significantly increase the red light emission intensity at 660nm, which can effectively increase the light quantum efficiency of the product and meet the needs of plant growth; on the other hand, it can maintain the plant growth spectrum Continuity to meet plant growth needs.
  • Mg 4 GeO 5.5 F: Mn is used as the oxyfluoride red powder, and mixed with the nitride red powder having a wavelength in the range of 610-670nm as the red phosphor powder of the first phosphor powder layer, which has the following advantages: Mg 4 GeO 5.5 F: Mn is a oxyfluoride red powder with the strongest excitation energy at 415nm. Its emission peak is located at 658nm with narrow band emission and high optical quantum efficiency. In addition, Mg 4 GeO 5.5 F: Mn is oxyfluoride. Red powder is more reliable, especially in high-temperature and high-humidity environments, and has good stability. It can be used in high-humidity plant growth environments and is very suitable for plant lighting.
  • the heat dissipation substrate 221 is used to effectively dissipate the heat generated when the light emitting diodes for plant growth work, so as to prevent the light emitting diodes for plant growth from preventing excessive heat. It is beneficial to the growth of plants, and at the same time avoids the impact of excessive heat generation on the device itself, and prolongs the service life of the device.
  • the heat-dissipating substrate 221 is used as a substrate for supporting the chip and its coating formed on the surface thereof.
  • the heat dissipation substrate 221 is selected from a ceramic substrate having both a good heat dissipation effect and a supporting effect.
  • the ceramic substrate is an AlN / SiC composite substrate. Since the thermal conductivity of the composite ceramic substrate is relatively higher than that of AlN, the effect of reducing the light quantum efficiency caused by heat is effectively reduced, which is beneficial to improving the reliability of the device. And initial photosynthetic photon flux (PPF).
  • PPF initial photosynthetic photon flux
  • the LED chip is fixed on the surface of the heat dissipation substrate 221.
  • the LED chip includes a first blue light chip 222 and a second blue light chip 224, and the first blue light chip 222 and the second blue light chip 224 are arranged side by side on the same surface of the heat dissipation substrate 221, that is, the first blue light chip 222 and the first blue light chip 222
  • the two blue light chips 224 are in direct contact with the heat dissipation substrate 221.
  • the first blue light chip 222 and the second blue light chip 224 may be disposed on the heat dissipation substrate 221 side by side and at the same height.
  • the first blue light chip 222 and the second blue light chip 224 are arranged side by side on the heat dissipation substrate 221 in a stepwise manner, that is, the first blue light chip 222 and the second blue light chip 224 are unequal in height, thereby avoiding the blue light chip from the side
  • the light emitted by the side excites the phosphor adhesive layer provided on the surface of the adjacent blue light chip, causing luminous interference, avoiding pollution between various colors of light, and reducing light damage; in addition, the stepwise setting can be used to prevent electrical connection to the first blue light chip 222 And the wiring of the second blue light chip 224 is recessed.
  • the height difference between the first blue light chip 222 and the second blue light chip 224 satisfies that the light emitted by the lower thickness blue light chip will not irradiate the phosphor glue layer on the surface of the adjacent blue light chip (higher thickness blue light chip).
  • a first phosphor adhesive layer 223 is provided on the surface of the discrete blue-ray thermal substrate 221 on the back of the first blue light chip 222, and a second phosphor is provided on the surface of the discrete blue-ray thermal substrate 221 on the back of the second blue-light chip 224. ⁇ 225 ⁇ Glue layer 225.
  • the use of chips in different bands to selectively excite specific phosphors can maximize light output and maximize the phosphor's luminous effect.
  • the first phosphor powder layer 223 and the second phosphor powder layer 225 are combined on the surfaces of the first blue light chip 222 and the second blue light chip 224 by a spraying method, and a specific phosphor powder layer can be matched by spraying.
  • the specific blue light chip can maximize the excitation efficiency of the phosphor.
  • the emission peak of the first blue light chip 222 is in the range of 400-420 nm
  • the emission peak of the second blue light chip 224 is in the range of 440-470 nm.
  • the first blue light chip 222 with an emission peak in the range of 400-420nm can make the fluorinated oxide and nitride phosphors with peak wavelengths in the range of 400-420nm in the first phosphor layer 223 provided on the surface, and its excitation effect All are in a better state, as shown in Figure 2.
  • the second blue light chip 224 with an emission peak in the range of 440-470 nm can make the aluminate phosphor in the first phosphor layer 225 on the surface of the second phosphor layer have the best excitation effect.
  • the first phosphor adhesive layer 223 is a phosphor adhesive layer formed of a first red phosphor and a silica gel.
  • the first phosphor adhesive layer 223 emits under the excitation of the first blue light chip 222 whose emission peak is in the range of 400-420 nm.
  • the spectrum is broad-band, and the narrow-band peak emission at 660nm is prominently raised, and the intensity is high, which corresponds to a significant increase in the photosynthetic photon flux of plant growth.
  • the mass ratio of the first red phosphor and the silica gel that is, the powder rubber ratio is 1: 3 to 1: 5.
  • the first red phosphor is too high, it will not be easy to uniformly disperse the phosphor, and if it is too low, a convex cup will be formed during the dispensing process, both of which will reduce the photosynthetic photon flux of the device.
  • the first red phosphor in the first phosphor adhesive layer 223 is a mixed phosphor of a red oxide of fluorooxide and a red powder of nitride.
  • a ratio of the oxyfluoride red powder and the nitride red powder is 1: 3 to 1: 5. If the ratio is too low (the content of fluorooxide red powder is too small), the emission intensity of the 660nm peak of the phosphor is not high enough, causing the light and photon flux to meet the requirements; if the ratio is too high, the nitride phosphor spectrum is easily covered and difficult Achieve the continuity of device spectrum).
  • Pink oxyfluoride embodiment of the present invention not only can be present on the premise Pink nitride, having a high emission intensity (corresponding to the high light intensity), and at elevated temperatures, has a high emission intensity.
  • the fluorinated red powder must also be capable of stably emitting light under water-containing conditions.
  • the oxyfluoride red powder is Mg 4 GeO 5.5 F: Mn
  • the Mg 4 GeO 5.5 F: Mn provides a narrow spectrum under the premise of the wide spectral range provided by the nitride red powder, thereby improving light emission
  • the Mg 4 GeO 5.5 F: Mn has excellent luminous stability compared with KSF, which has poor luminous stability, especially when it cannot be used normally in water, and can be used in a plant growth environment with high water or humidity.
  • the comparison of the excitation and emission spectra of Mg 4 GeO 5.5 F: Mn is shown in Figure 2. At 415 nm, the phosphor has the highest excitation energy, and the emission wavelength is near 660 nm, showing a narrow-band emission.
  • the nitride red powder is selected from the nitride red powder having a peak wavelength in the range of 610-670 nm, and the coupling continuity between the spectrum of the nitride red powder and the spectrum of the fluorooxide red powder is good.
  • the photosynthetic photon flux (PPF) of light emitting diode devices for plant growth has the greatest impact on the energy contribution of this band.
  • the nitride red powder is selected from (Sr, Ca) x AlSiN 3 : Eu y .
  • Sr x AlSiN 3 Eu y
  • Ca x AlSiN 3 Eu y
  • the preferred nitride red powder has high external quantum efficiency and good stability. Further preferably, the peak wavelength of the nitride red powder is at 660 nm, and the 660 nm band contributes best to PPF, which is beneficial to plant growth and photosynthesis.
  • the second phosphor powder layer 225 is a phosphor powder layer formed of a green phosphor, a second red phosphor, and silica gel.
  • the second phosphor powder layer 225 under the excitation of the second blue light chip 224 with an emission peak in the range of 440-470 nm, emits green and red light that is beneficial to plant growth.
  • the powder-to-gel ratio (the ratio of the total weight of the green phosphor and the second red phosphor to the weight of the silica gel) is 1: 3 to 1: 5.
  • the mass ratio of the green phosphor and the second red phosphor is 5: 1 to 10: 1. If the ratio of the second red phosphor is too high, the photosynthetic photon flux will be reduced.
  • the green phosphor is selected from at least one of silicate green powder, nitrogen oxide green powder, and aluminate green powder; and the second red phosphor is selected from aluminate far red powder.
  • the green phosphor is more preferably an aluminate green powder, and the aluminate green powder has high light efficiency, wide half-peak width, good continuity, and good stability.
  • the aluminate far red powder has the highest excitation efficiency under excitation at 460 nm, and the excitation system has good stability.
  • the green phosphor has a peak wavelength in a range of 500-530 nm, and further preferably, the green phosphor is (Y, Lu) m (Al, Ga) 5 O 12 : Ce n .
  • (Y, Lu) means that it contains at least one of Y and Lu
  • (Al, Ga) means that it contains at least one of Al and Ga
  • Ce is a doping element and is used to replace part of the Y element or Lu Element, which acts as an activator
  • m + n 3.
  • the aluminate far red powder has a peak wavelength in a range of 710-750 nm, and provides far-infrared light for plant growth.
  • the aluminate far red powder is (Y, Lu) m (Al, Ga) 5 O 12 : Cr n .
  • (Y, Lu) means that it contains at least one of Y and Lu
  • (Al, Ga) means that it contains at least one of Al and Ga
  • Cr is a doping element, which is used to replace part of the Y element or Lu Element, which acts as an activator
  • m + n 3.
  • the aluminate far red powder is Lu 3 Al 5 O 12 : Cr with a peak wavelength at 730 nm, and has the advantages of high light efficiency and good stability.
  • a schematic diagram of an excitation spectrum (monitoring wavelength: 730 nm) using a 730 nm far red powder is shown in FIG. 3.
  • the phosphor has the highest excitation energy and the emission wavelength is near 760 nm.
  • the emission peak of the first blue light chip 222 is located at 415 nm
  • the emission peak of the second blue light chip 224 is located at 460 nm.
  • the excited spectrum has peaks of 415nm, 460nm, and 660nm, and the luminous intensity is appropriate, which is beneficial to the growth of plants.
  • the spectrum of the light emitting diode for plant growth has the following peaks: 415 nm, 460 nm, 660 nm, and the peak intensity ratios of 415 nm, 460 nm, and 660 nm are: (0.1-0.6): 1: (2.0-5.0). At this time, the obtained spectrum is suitable and the intensity ratio is good, which is particularly beneficial for regulating plant growth and development.
  • the light-emitting diode for plant growth includes an AlN / SiC composite substrate, and an LED chip fixed on a surface of the AlN / SiC composite substrate.
  • the LED chip includes a LED chip disposed side by side on the same surface of the heat dissipation substrate 221.
  • the first blue light chip 222 and the second blue light chip 224, and the surface of the first blue light chip 222 behind the discrete thermal substrate 221 is provided with a first phosphor adhesive layer 223, and the surface of the second blue light chip 224 behind the discrete thermal substrate 221 is provided with a second fluorescent light Powder glue layer 225,
  • the emission peak of the first blue light chip 222 is at 415 nm, and the emission peak of the second blue light chip 224 is at 460 nm;
  • the first phosphor powder layer 223 is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer 223 is a mixed fluorescence of a fluorooxide red powder and a nitride red powder.
  • the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn
  • the second phosphor powder layer 225 is a phosphor powder layer formed of a green phosphor, a second red phosphor, and silica gel.
  • the second red phosphor is Lu 3 Al 5 O 12 : Cr with a peak wavelength at 730 nm.
  • the spectrum of the light emitting diode for plant growth has the following peaks: 415nm, 460nm, 660nm, and the peak intensity ratios of 415nm, 460nm, and 660nm are: (0.2-0.3): 1: (2.5-3.5).
  • the light-emitting diodes for plant growth may further include silver glue, a bracket, a gold wire, or an alloy wire.
  • a light emitting diode for plant growth includes an AlN composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate.
  • the LED chip includes a first blue light chip and a second blue chip which are arranged side by side on the same surface of the heat dissipation substrate.
  • a blue phosphor chip, and a surface of the first blue chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer
  • a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, wherein,
  • An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
  • the first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel
  • the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder.
  • the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn
  • the second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm.
  • a light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate.
  • the LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate.
  • a second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer
  • a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
  • An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
  • the first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel
  • the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder.
  • the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn
  • the second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm.
  • a light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate.
  • the LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate.
  • a second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer
  • a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
  • An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
  • the first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel
  • the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder.
  • the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn
  • the second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm.
  • a light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate.
  • the LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate.
  • a second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer
  • a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
  • An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
  • the first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel
  • the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder.
  • the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn
  • the second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm.
  • a light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate.
  • the LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate.
  • a second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer
  • a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
  • An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
  • the first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel
  • the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder.
  • the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn
  • the second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm.
  • the green phosphor is (Sr, Ba) 2 SiO 4 : Eu .
  • a light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate.
  • the LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate.
  • a second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer
  • a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
  • An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
  • the first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel
  • the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder.
  • the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn
  • the second phosphor powder layer is a phosphor powder layer formed by a green phosphor powder, a second red phosphor powder and silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr with a peak wavelength at 710 nm.
  • a light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate.
  • the LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate.
  • a second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer
  • a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
  • An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
  • the first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel
  • the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder.
  • the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn
  • the second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 740 nm.
  • a light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate.
  • the LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate.
  • a second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer
  • a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
  • An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
  • the second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm.
  • the comparative package is realized by multi-chip coupling.
  • the chip is a combination of blue (460 nm), red (660 nm), and far red (730 nm) chips, and its red-blue spectral ratio is the same as that of Comparative Examples 1-8.
  • the samples using the nitride 660 nm peak wavelength phosphor had a higher PPF than the samples using other peak wavelength phosphors.
  • a combination of a nitride phosphor and a oxyfluoride phosphor with a peak wavelength of 660 nm uses a certain ratio, and its emission intensity in the red light portion is significantly enhanced.
  • a comparison diagram of the emission spectrum (excitation wavelength: 415nm) using Mg 4 GeO 5.5 F: Mn and ((Sr, Ca) x AlSiN 3 : Eu y , and x + y 1) is shown in Figure 4. At the same time, the combined samples The PPF has been significantly improved.
  • Table 2 shows the light color data (5000K) of Example 1 and Example 2 at room temperature. It can be seen that the photosynthetic photon flux (PPF) of the AlN / SiC composite substrate relative to the AlN ceramic substrate after 1000h and 2000h lighting ) Has obvious advantages.

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Abstract

A light-emitting diode for plant growth, comprising a heat dissipation substrate, and an LED chip fixed on a surface of said heat dissipation substrate, the LED chip comprising a first blue light chip and a second blue light chip that are arranged parallel to each other on the same surface of the heat dissipation substrate; a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder adhesive layer, and a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder adhesive layer, wherein an emission peak value of the first blue light chip is located within the range of 400-420nm, and an emission peak value of the second blue light chip is located within the range of 440-470nm; the first phosphor powder adhesive layer is a phosphor powder adhesive layer that is composed of a first red phosphor powder and silica gel, and the red phosphor powder in the first phosphor powder adhesive layer is a mixed phosphor powder of oxyfluoride red powder and nitride red powder, said oxyfluoride red powder being Mg4GeO5.5F:Mn.

Description

植物生长用发光二极管Light-emitting diodes for plant growth 技术领域Technical field
本发明属于半导体技术领域，尤其涉及一种植物生长用发光二极管。The invention belongs to the field of semiconductor technology, and particularly relates to a light-emitting diode for plant growth.
背景技术Background technique
光环境是植物生长发育不可缺少的重要物理环境因素之一，通过光质调节，控制植物生长发育的各个阶段是一项重要技术。LED（发光二极管）植物灯除了具有高效、节能、寿命长等优势，还能够根据植物所需提供不同“光肥”，在促进植物快速生长同时，能够达到高效、优质、增产、无公害目的。研究表明，峰值位于460nm的蓝光和660nm的红光对植物光合作用影响较大，此外在实际应用中，适量的紫外和远红光，对植物生长发育具有调控功能，有利于提升植物口感，提高花色的鲜艳度；尤其光谱位于730-800nm的远红光，有利于植物感知植株的长度，在远红光条件下，植株会长得更高。因此，实现全光谱植物照明无论在视觉效果还是在植物生长方面均有一定的优势。现有植物照明LED通常采用LED多芯片组合（460nm蓝光芯片+660nm红光芯片+730nm远红光芯片）实现，这种方式能够达到植物生长所需光照度，但成本太高。而采用芯片匹配荧光粉方式实现植物照明LED，成本较低，但是660nm荧光粉替代红光芯片时，主要问题在于荧光粉发射强度不够，导致器件光合光子通量相对较小，光照度相对较低。Light environment is one of the important physical environmental factors indispensable for plant growth and development. It is an important technology to control various stages of plant growth and development through light quality regulation. In addition to the advantages of high efficiency, energy saving, and long life, LED (light emitting diode) plant lights can also provide different "light fertilizers" according to the needs of the plant. While promoting the rapid growth of the plant, it can achieve high efficiency, high quality, increased yield, and no pollution. Studies have shown that blue light at 460 nm and red light at 660 nm have a greater effect on plant photosynthesis. In addition, in actual applications, appropriate amounts of ultraviolet and far red light have regulatory functions on plant growth and development, which is beneficial to enhance plant taste and improve The vividness of the flower color; especially the far-red light with a spectrum at 730-800nm is beneficial for the plant to perceive the length of the plant. Under far-red light conditions, the plant will grow higher. Therefore, the realization of full-spectrum plant lighting has certain advantages in both visual effects and plant growth. Existing plant lighting LEDs are usually implemented with LED multi-chip combinations (460nm blue light chip + 660nm red light chip + 730nm far red light chip). This method can achieve the illuminance required for plant growth, but the cost is too high. The use of chip-matched phosphors to achieve plant lighting LEDs has a lower cost. However, when 660nm phosphors replace red light chips, the main problem is that the phosphor emission intensity is insufficient, resulting in relatively small photosynthetic photon flux and relatively low illumination.
技术问题technical problem
本发明的目的在于提供一种植物生长用发光二极管，旨在解决现有的660nm荧光粉替代红光芯片的植物照明LED荧光粉发射强度不够，光照强度较低的问题。The purpose of the present invention is to provide a light-emitting diode for plant growth, which aims to solve the problems that the existing 660 nm fluorescent powder replaces the red light chip of plant lighting LED fluorescent powder with insufficient emission intensity and low light intensity.
技术解决方案Technical solutions
为实现上述发明目的，本发明采用的技术方案如下：In order to achieve the above-mentioned object of the invention, the technical solution adopted by the present invention is as follows:
本发明提供一种植物生长用发光二极管，包括散热基板，以及固定在所述散热基板表面的LED芯片，所述LED芯片包括并列设置在所述散热基板同一表面的第一蓝光芯片和第二蓝光芯片，且所述第一蓝光芯片背离所述散热基板的表面设置有第一荧光粉胶层，所述第二蓝光芯片背离所述散热基板的表面设置有第二荧光粉胶层，其中，The invention provides a light-emitting diode for plant growth, which includes a heat-dissipating substrate and an LED chip fixed on the surface of the heat-dissipating substrate. The LED chip includes a first blue-light chip and a second blue-light arranged on the same surface of the heat-dissipating substrate in parallel A chip, and a first phosphor powder layer is disposed on a surface of the first blue light chip facing away from the heat dissipation substrate, and a second phosphor powder layer is provided on a surface of the second blue light chip facing away from the heat dissipation substrate, wherein,
所述第一蓝光芯片的发射峰值位于400-420nm范围内，所述第二蓝光芯片的发射峰值位于440-470nm范围内；The emission peak of the first blue light chip is in the range of 400-420nm, and the emission peak of the second blue light chip is in the range of 440-470nm;
所述第一荧光粉胶层为由第一红色荧光粉和硅胶形成的荧光粉胶层，且所述第一荧光粉胶层中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉，所述氟氧化物红粉为Mg4GeO5.5F:Mn，所述氮化物红粉选自峰值波长位于610-670nm范围内的氮化物红粉；The first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder. Mixed phosphor, the fluorooxide red powder is Mg4GeO5.5F: Mn, and the nitride red powder is selected from the nitride red powder having a peak wavelength in the range of 610-670nm;
所述第二荧光粉胶层为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层。The second phosphor powder layer is a phosphor powder layer formed by a green phosphor, a second red phosphor, and a silica gel.
由于所采用不同种类荧光粉的最佳激发波段不同，若在芯片上形成混合荧光粉胶层，不同芯片波段都会激发荧光粉形成光输出，由于输出功率差异性，会造成特定波段荧光粉光输出的损耗。基于此，本发明提供的植物生长用发光二极管，在散热基板上设置有双芯片，且在双芯片表面分别形成不同的荧光粉胶层。根据不同种类的特定荧光粉激发波段的差异，采用不同的特定波段芯片，选择性地激发特定的荧光粉，能够实现光输出最大化，使荧光粉发光效果达到最佳。Because the optimal excitation wavelength of different types of phosphors is different, if a mixed phosphor powder layer is formed on a chip, the phosphors will be excited by different chip bands to form a light output. Due to the difference in output power, the light output of a specific band of phosphors will be caused Loss. Based on this, the light emitting diode for plant growth provided by the present invention is provided with a dual chip on a heat dissipation substrate, and different phosphor powder layers are formed on the surface of the dual chip, respectively. According to the difference in the excitation band of different types of specific phosphors, different specific band chips are used to selectively excite specific phosphors, which can maximize the light output and maximize the phosphor luminous effect.
有益效果Beneficial effect
具体的，针对植物照明发光二极管中660nm红光强度低，导致光合光子通量低，无法满足植物生长需要的问题，本发明采用氟氧化物荧光粉搭配氮化物荧光粉，形成在发射峰值位于400-420nm范围内的第一蓝光芯片，使得660nm红光发射强度显著增强，光合光子通量明显提升。其主要原因是所采用的氟氧化物红粉在特定波段激发下，其发射强度高于氮化物红粉，且光谱为窄带，峰值位于660nm左右，能量更为集中，发射强度相对氮化物荧光粉明显增强。单纯采用窄带氟氧化物红粉随能提高灯珠的光量子效率，但光谱的连续性较差，对于植物生长其它所需波段很难满足；因此，本发明将此氟氧化物红粉波长位于610-670nm的氮化物红粉结合使用，二者混合使用，一方面能够显著提升位于660nm处的红光发射强度，能够有效提升产品的光量子效率，满足植物生长需求；另一方面，能够保持植物生长光谱的连续性，满足植物生长需求。Specifically, in order to solve the problem that the red light intensity of 660nm in the plant lighting LED is low, resulting in a low photosynthetic photon flux and unable to meet the needs of plant growth, the present invention uses a fluorooxide phosphor in combination with a nitride phosphor to form an emission peak at 400. The first blue light chip in the -420nm range significantly increased the red light emission intensity at 660nm, and the photosynthetic photon flux was significantly improved. The main reason is that the fluorooxide red powder used has a higher emission intensity than the nitride red powder when excited in a specific wavelength band, and its spectrum is narrow band. The peak is located at about 660nm, the energy is more concentrated, and the emission intensity is significantly enhanced compared to the nitride phosphor. . The use of narrow-band oxyfluoride red powder alone can increase the light quantum efficiency of the lamp beads, but the continuity of the spectrum is poor, which is difficult to meet for other wavelength bands required for plant growth; therefore, the fluorooxide red powder has a wavelength of 610-670nm in the present invention. Nitride red powder is used in combination, and the two are used in combination, on the one hand, it can significantly increase the red light emission intensity at 660nm, which can effectively improve the light quantum efficiency of the product and meet the needs of plant growth; on the other hand, it can maintain the continuity of the plant growth spectrum And meet plant growth needs.
进一步的，本发明采用Mg 4GeO 5.5F:Mn作为氟氧化物红粉，与波长位于610-670nm范围内的氮化物红粉混合作为第一荧光粉胶层的红色荧光粉，具有以下优点：Mg 4GeO 5.5F:Mn作为氟氧化物红粉，在415nm处激发能量最强，其发射峰值位于658nm处，呈窄带发射，光量子效率较高；此外，Mg 4GeO 5.5F:Mn作为氟氧化物红粉的可靠较好，尤其在高温高湿环境下其稳定性较好，能够在湿度较高的植物生长环境中使用，非常适合应用于植物照明中。 Further, the present invention uses Mg 4 GeO 5.5 F: Mn as a red oxide of oxyfluoride, and is mixed with a red nitride powder having a wavelength in the range of 610-670 nm as a red phosphor of the first phosphor adhesive layer, and has the following advantages: Mg 4 GeO 5.5 F: Mn is a oxyfluoride red powder with the strongest excitation energy at 415nm. Its emission peak is located at 658nm with a narrow-band emission and high optical quantum efficiency. In addition, Mg 4 GeO 5.5 F: Mn is used as a fluorooxide red powder. Reliable and good, especially in high temperature and high humidity environment, it has good stability, can be used in high humidity plant growth environment, and is very suitable for plant lighting.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1是本发明实施例提供的植物生长用发光二极管的结构示意图；1 is a schematic structural diagram of a light emitting diode for plant growth according to an embodiment of the present invention;
图2是本发明实施例提供的氟氧化物荧光粉的激发和发射光谱对比示意图；2 is a schematic diagram of a comparison of excitation and emission spectra of a fluorooxide phosphor according to an embodiment of the present invention;
图3是本发明实施例提供的采用730nm远红粉的激发光谱示意图（监测波长：730nm）；3 is a schematic diagram of an excitation spectrum using a 730nm far red powder according to an embodiment of the present invention (monitoring wavelength: 730nm);
图4是本发明实施例提供的采用氟氮化物荧光粉和氮化物荧光粉发射光谱对比示意图（激发波长：415nm）。FIG. 4 is a schematic diagram of comparison of emission spectra (excitation wavelength: 415 nm) using a fluoronitride phosphor and a nitride phosphor according to an embodiment of the present invention.
本发明的实施方式Embodiments of the invention
为了使本发明要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。In order to make the technical problems, technical solutions, and beneficial effects of the present invention clearer and clearer, the present invention is further described in detail in combination with the embodiments below. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.
在本发明的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。In the description of the present invention, it should be understood that the terms “first” and “second” are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless specifically defined otherwise.
结合图1-4，本发明实施例提供了一种植物生长用发光二极管，包括散热基板221，以及固定在散热基板221表面的LED芯片，所述LED芯片包括并列设置在散热基板221同一表面的第一蓝光芯片222和第二蓝光芯片224，且第一蓝光芯片222背离散热基板221的表面设置有第一荧光粉胶层223，第二蓝光芯片224背离散热基板221的表面设置有第二荧光粉胶层225，其中，With reference to FIGS. 1-4, an embodiment of the present invention provides a light emitting diode for plant growth, which includes a heat dissipation substrate 221 and an LED chip fixed on a surface of the heat dissipation substrate 221. The LED chip includes side-by-side The first blue light chip 222 and the second blue light chip 224, and the surface of the first blue light chip 222 behind the discrete thermal substrate 221 is provided with a first phosphor adhesive layer 223, and the surface of the second blue light chip 224 behind the discrete thermal substrate 221 is provided with a second fluorescent light Powder glue layer 225,
第一蓝光芯片222的发射峰值位于400-420nm范围内，第二蓝光芯片224的发射峰值位于440-470nm范围内；The emission peak of the first blue light chip 222 is in the range of 400-420nm, and the emission peak of the second blue light chip 224 is in the range of 440-470nm;
第一荧光粉胶层223为由第一红色荧光粉和硅胶形成的荧光粉胶层，且第一荧光粉胶层223中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉，所述氟氧化物红粉为Mg4GeO 5.5F:Mn，所述氮化物红粉选自峰值波长位于610-670nm范围内的氮化物红粉； The first phosphor powder layer 223 is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer 223 is a mixed fluorescence of a fluorooxide red powder and a nitride red powder. Powder, the fluorooxide red powder is Mg4GeO 5.5 F: Mn, and the nitride red powder is selected from nitride red powder having a peak wavelength in the range of 610-670nm;
第二荧光粉胶层225为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层。The second phosphor powder layer 225 is a phosphor powder layer formed of a green phosphor, a second red phosphor, and silica gel.
由于所采用不同种类荧光粉的最佳激发波段不同，若在芯片上形成混合荧光粉胶层，不同芯片波段都会激发荧光粉形成光输出，由于输出功率差异性，会造成特定波段荧光粉光输出的损耗。基于此，本发明实施例提供的植物生长用发光二极管，在散热基板上设置有发射峰值分别位于400-420nm、440-470nm的双芯片，且在双芯片表面分别形成不同的特定荧光粉胶层（第一荧光粉胶层为由第一红色荧光粉和硅胶形成的荧光粉胶层，第二荧光粉胶层为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层）。根据不同种类的特定荧光粉激发波段的差异，采用不同的特定波段芯片，选择性地激发特定的荧光粉，能够实现光输出最大化，使荧光粉发光效果达到最佳。Because the optimal excitation wavelength of different types of phosphors is different, if a mixed phosphor powder layer is formed on a chip, the phosphors will be excited by different chip bands to form a light output. Due to the difference in output power, the light output of a specific band of phosphors will be caused Loss. Based on this, the light emitting diodes for plant growth provided by the embodiments of the present invention are provided with dual chips having emission peaks at 400-420nm and 440-470nm respectively on the heat dissipation substrate, and different specific phosphor glue layers are formed on the surfaces of the dual chips, respectively. (The first phosphor powder layer is a phosphor powder layer formed by a first red phosphor powder and silica gel, and the second phosphor powder layer is a phosphor powder layer formed by a green phosphor powder, a second red phosphor powder, and silica gel). According to the difference in the excitation band of different types of specific phosphors, different specific band chips are used to selectively excite specific phosphors, which can maximize the light output and maximize the phosphor luminous effect.
具体的，针对植物照明发光二极管中660nm红光强度低，导致光合光子通量低，无法满足植物生长需要的问题，本发明实施例采用氟氧化物荧光粉搭配氮化物荧光粉，形成在发射峰值位于400-420nm范围内的第一蓝光芯片，使得660nm红光发射强度显著增强，光合光子通量明显提升。其主要原因是所采用的氟氧化物红粉在特定波段激发下，其发射强度高于氮化物红粉，且光谱为窄带，峰值位于660nm左右，能量更为集中，发射强度相对氮化物荧光粉明显增强。单纯采用窄带氟氧化物红粉虽能提高灯珠的光量子效率，但光谱的连续性较差，对于植物生长其它所需波段很难满足；因此，本发明实施例将此氟氧化物红粉波长位于610-670nm的氮化物红粉结合使用，二者混合使用，一方面能够显著提升位于660nm处的红光发射强度，进而有效提升产品的光量子效率，满足植物生长需求；另一方面，能够保持植物生长光谱的连续性，满足植物生长需求。Specifically, in view of the problem that the red light intensity at 660 nm in the plant lighting LED is low, which results in a low photosynthetic photon flux and cannot meet the needs of plant growth, the embodiment of the present invention uses a fluorinated oxide phosphor with a nitride phosphor to form an emission peak. The first blue light chip located in the range of 400-420nm significantly enhanced the red light emission intensity at 660nm, and the photosynthetic photon flux was significantly improved. The main reason is that the fluorooxide red powder used has a higher emission intensity than the nitride red powder when excited in a specific wavelength band, and its spectrum is narrow band. The peak is located at about 660nm, the energy is more concentrated, and the emission intensity is significantly enhanced compared to the nitride phosphor. . Although the use of narrow-band oxyfluoride red powder alone can improve the light quantum efficiency of the lamp beads, the continuity of the spectrum is poor, which is difficult to satisfy other wavelength bands required for plant growth; therefore, the embodiment of the present invention uses this oxyfluoride red powder at a wavelength of 610 The combination of -670nm nitride red powder can be used on the one hand, which can significantly increase the red light emission intensity at 660nm, which can effectively increase the light quantum efficiency of the product and meet the needs of plant growth; on the other hand, it can maintain the plant growth spectrum Continuity to meet plant growth needs.
进一步的，本发明实施例采用Mg 4GeO 5.5F:Mn作为氟氧化物红粉，与波长位于610-670nm范围内的氮化物红粉混合作为第一荧光粉胶层的红色荧光粉，具有以下优点：Mg 4GeO 5.5F:Mn作为氟氧化物红粉，在415nm处激发能量最强，其发射峰值位于658nm处，呈窄带发射，光量子效率较高；此外，Mg 4GeO 5.5F:Mn作为氟氧化物红粉的可靠较好，尤其在高温高湿环境下其稳定性较好，能够在湿度较高的植物生长环境中使用，非常适合应用于植物照明中。 Further, in the embodiment of the present invention, Mg 4 GeO 5.5 F: Mn is used as the oxyfluoride red powder, and mixed with the nitride red powder having a wavelength in the range of 610-670nm as the red phosphor powder of the first phosphor powder layer, which has the following advantages: Mg 4 GeO 5.5 F: Mn is a oxyfluoride red powder with the strongest excitation energy at 415nm. Its emission peak is located at 658nm with narrow band emission and high optical quantum efficiency. In addition, Mg 4 GeO 5.5 F: Mn is oxyfluoride. Red powder is more reliable, especially in high-temperature and high-humidity environments, and has good stability. It can be used in high-humidity plant growth environments and is very suitable for plant lighting.
具体的，本发明实施例中，散热基板221一方面用于在所述植物生长用发光二极管工作时，将其产生的热量有效散出，从而防止所述植物生长用发光二极管防热过多不利于植物的生长，同时避免放热过高对器件本身造成的影响，延长器件的使用寿命。另一方面，散热基板221作为衬底，用于支撑形成在其表面的芯片及其涂层。优选的，散热基板221选自兼具较好的散热效果和支撑效果的陶瓷基板。具体优选的，所述陶瓷基板为AlN/SiC复合基板，由于复合陶瓷基板的导热系数相对AlN较高，有效减少了因热而产生的光量子效率降低的因素影响，因此有益于提升器件的可靠性和初始光合光子通量（PPF）。Specifically, in the embodiment of the present invention, on the one hand, the heat dissipation substrate 221 is used to effectively dissipate the heat generated when the light emitting diodes for plant growth work, so as to prevent the light emitting diodes for plant growth from preventing excessive heat. It is beneficial to the growth of plants, and at the same time avoids the impact of excessive heat generation on the device itself, and prolongs the service life of the device. On the other hand, the heat-dissipating substrate 221 is used as a substrate for supporting the chip and its coating formed on the surface thereof. Preferably, the heat dissipation substrate 221 is selected from a ceramic substrate having both a good heat dissipation effect and a supporting effect. Specifically, the ceramic substrate is an AlN / SiC composite substrate. Since the thermal conductivity of the composite ceramic substrate is relatively higher than that of AlN, the effect of reducing the light quantum efficiency caused by heat is effectively reduced, which is beneficial to improving the reliability of the device. And initial photosynthetic photon flux (PPF).
本发明实施例中，将LED芯片固定在散热基板221表面。进一步的，所述LED芯片包括第一蓝光芯片222和第二蓝光芯片224，且第一蓝光芯片222和第二蓝光芯片224并列设置在散热基板221同一表面上，即第一蓝光芯片222和第二蓝光芯片224均与散热基板221直接接触。第一蓝光芯片222和第二蓝光芯片224可以并排且等高地设置在散热基板221上。作为优选实施方式，第一蓝光芯片222和第二蓝光芯片224并排且呈台阶式设置在散热基板221上，即第一蓝光芯片222和第二蓝光芯片224不等高，从而避免蓝光芯片从侧边发出的光激发相邻蓝光芯片表面设置的荧光粉胶层，造成发光干扰，避免各色光之间的污染，降低光损伤；此外通过台阶式设置可以防止用于电性连接第一蓝光芯片222和第二蓝光芯片224的布线凹陷。第一蓝光芯片222和第二蓝光芯片224的高度差满足：厚度较低的蓝光芯片发射的光，不会照射到相邻蓝光芯片（厚度较高的蓝光芯片）表面的荧光粉胶层。In the embodiment of the present invention, the LED chip is fixed on the surface of the heat dissipation substrate 221. Further, the LED chip includes a first blue light chip 222 and a second blue light chip 224, and the first blue light chip 222 and the second blue light chip 224 are arranged side by side on the same surface of the heat dissipation substrate 221, that is, the first blue light chip 222 and the first blue light chip 222 The two blue light chips 224 are in direct contact with the heat dissipation substrate 221. The first blue light chip 222 and the second blue light chip 224 may be disposed on the heat dissipation substrate 221 side by side and at the same height. As a preferred embodiment, the first blue light chip 222 and the second blue light chip 224 are arranged side by side on the heat dissipation substrate 221 in a stepwise manner, that is, the first blue light chip 222 and the second blue light chip 224 are unequal in height, thereby avoiding the blue light chip from the side The light emitted by the side excites the phosphor adhesive layer provided on the surface of the adjacent blue light chip, causing luminous interference, avoiding pollution between various colors of light, and reducing light damage; in addition, the stepwise setting can be used to prevent electrical connection to the first blue light chip 222 And the wiring of the second blue light chip 224 is recessed. The height difference between the first blue light chip 222 and the second blue light chip 224 satisfies that the light emitted by the lower thickness blue light chip will not irradiate the phosphor glue layer on the surface of the adjacent blue light chip (higher thickness blue light chip).
由于所采用不同种类荧光粉的最佳激发波段不同，若在芯片上形成混合荧光粉胶层，不同芯片波段都会激发荧光粉形成光输出，由于输出功率差异性，会造成特定波段荧光粉光输出的损耗。基于此，进一步的，本发明实施例在第一蓝光芯片222背离散热基板221的表面设置有第一荧光粉胶层223，在第二蓝光芯片224背离散热基板221的表面设置有第二荧光粉胶层225。根据不同种类荧光粉激发波段的差异，采用不同波段芯片选择性地激发特定的荧光粉，能够实现光输出最大化，使荧光粉发光效果达到最佳。优选的，第一荧光粉胶层223、第二荧光粉胶层225通过喷涂方法结合在第一蓝光芯片222、第二蓝光芯片224表面，通过喷涂的方式，能够使特定荧光粉胶层对应匹配特定蓝光芯片，能够使得荧光粉激发效率达到最大化。Because the optimal excitation wavelength of different types of phosphors is different, if a mixed phosphor powder layer is formed on a chip, the phosphors will be excited by different chip bands to form a light output. Due to the difference in output power, the light output of a specific band of phosphors will be caused Loss. Based on this, further, in the embodiment of the present invention, a first phosphor adhesive layer 223 is provided on the surface of the discrete blue-ray thermal substrate 221 on the back of the first blue light chip 222, and a second phosphor is provided on the surface of the discrete blue-ray thermal substrate 221 on the back of the second blue-light chip 224.胶层 225。 Glue layer 225. According to the difference in the excitation band of different types of phosphors, the use of chips in different bands to selectively excite specific phosphors can maximize light output and maximize the phosphor's luminous effect. Preferably, the first phosphor powder layer 223 and the second phosphor powder layer 225 are combined on the surfaces of the first blue light chip 222 and the second blue light chip 224 by a spraying method, and a specific phosphor powder layer can be matched by spraying. The specific blue light chip can maximize the excitation efficiency of the phosphor.
本发明实施例中，第一蓝光芯片222的发射峰值位于400-420nm范围内，第二蓝光芯片224的发射峰值位于440-470nm范围内。发射峰值位于400-420nm范围的第一蓝光芯片222，可以使得设置在其表面的第一荧光粉层223中波峰波长位于400-420nm范围内的氟氧化物荧光和氮化物荧光粉，其激发效果均处于较佳状态，如图2所示。发射峰值位于440-470nm范围的第二蓝光芯片224，可以使得而处于第二荧光粉层表面的第一荧光粉层225中的铝酸盐荧光粉具有最佳的激发效果均。In the embodiment of the present invention, the emission peak of the first blue light chip 222 is in the range of 400-420 nm, and the emission peak of the second blue light chip 224 is in the range of 440-470 nm. The first blue light chip 222 with an emission peak in the range of 400-420nm can make the fluorinated oxide and nitride phosphors with peak wavelengths in the range of 400-420nm in the first phosphor layer 223 provided on the surface, and its excitation effect All are in a better state, as shown in Figure 2. The second blue light chip 224 with an emission peak in the range of 440-470 nm can make the aluminate phosphor in the first phosphor layer 225 on the surface of the second phosphor layer have the best excitation effect.
第一荧光粉胶层223为由第一红色荧光粉和硅胶形成的荧光粉胶层，第一荧光粉胶层223在发射峰值位于400-420nm范围内的第一蓝光芯片222的激发下，发射光谱呈宽带，且在660nm处有窄带峰发射明显凸起，强度较高，对应于植物生长光合光子通量有明显提升。其中，第一荧光粉胶层223中，所述第一红色荧光粉和所述硅胶的质量比例即粉胶比例为1:3至1:5。如所述第一红色荧光粉过高，会导致荧光粉不易均匀分散，过低会导致点胶过程中，形成凸杯，二者均会对降低器件的光合光子通量。The first phosphor adhesive layer 223 is a phosphor adhesive layer formed of a first red phosphor and a silica gel. The first phosphor adhesive layer 223 emits under the excitation of the first blue light chip 222 whose emission peak is in the range of 400-420 nm. The spectrum is broad-band, and the narrow-band peak emission at 660nm is prominently raised, and the intensity is high, which corresponds to a significant increase in the photosynthetic photon flux of plant growth. Wherein, in the first phosphor powder adhesive layer 223, the mass ratio of the first red phosphor and the silica gel, that is, the powder rubber ratio is 1: 3 to 1: 5. For example, if the first red phosphor is too high, it will not be easy to uniformly disperse the phosphor, and if it is too low, a convex cup will be formed during the dispensing process, both of which will reduce the photosynthetic photon flux of the device.
本发明实施例中，第一荧光粉胶层223中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉。优选的，所述氟氧化物红粉和所述氮化物红粉比例在1:3至1:5。若比例过低（氟氧化物红粉含量过少），荧光粉660nm峰值的发射强度不够高，导致光和光子通量达不到要求；比例过高的话，氮化物荧光粉光谱容易被覆盖，不易实现器件光谱的连续性）。In the embodiment of the present invention, the first red phosphor in the first phosphor adhesive layer 223 is a mixed phosphor of a red oxide of fluorooxide and a red powder of nitride. Preferably, a ratio of the oxyfluoride red powder and the nitride red powder is 1: 3 to 1: 5. If the ratio is too low (the content of fluorooxide red powder is too small), the emission intensity of the 660nm peak of the phosphor is not high enough, causing the light and photon flux to meet the requirements; if the ratio is too high, the nitride phosphor spectrum is easily covered and difficult Achieve the continuity of device spectrum).
本发明实施例的氟氧化物红粉，不仅需要能够在氮化物红粉存在的前提 下，具有较高的发射强度（对应的，光强度高），且在高温条件下，具有较高的发射强度。同时，基于植物生长用发光二极管特定使用环境的要求，所述氟氧化物红粉还必须能够在含水条件下能够稳定发光。基于此，具体的，所述氟氧化物红粉为Mg 4GeO 5.5F:Mn，所述Mg 4GeO 5.5F:Mn在氮化物红粉提供的宽光谱范围的前提下，提供窄光谱，从而提高发光强度；而且，相较于发光稳定性差特别是遇水无法正常使用的KSF，所述Mg 4GeO 5.5F:Mn具有优异的发光稳定性，能够使用于含水或湿度高的植物生长环境。Mg 4GeO 5.5F:Mn的激发和发射光谱对比示意如图2所示，在 415nm处，该荧光粉的激发能量最高，且发射波长位于660nm处附近，呈窄带发射。 Pink oxyfluoride embodiment of the present invention, not only can be present on the premise Pink nitride, having a high emission intensity (corresponding to the high light intensity), and at elevated temperatures, has a high emission intensity. At the same time, based on the requirements of the specific use environment of light-emitting diodes for plant growth, the fluorinated red powder must also be capable of stably emitting light under water-containing conditions. Based on this, specifically, the oxyfluoride red powder is Mg 4 GeO 5.5 F: Mn, and the Mg 4 GeO 5.5 F: Mn provides a narrow spectrum under the premise of the wide spectral range provided by the nitride red powder, thereby improving light emission In addition, the Mg 4 GeO 5.5 F: Mn has excellent luminous stability compared with KSF, which has poor luminous stability, especially when it cannot be used normally in water, and can be used in a plant growth environment with high water or humidity. The comparison of the excitation and emission spectra of Mg 4 GeO 5.5 F: Mn is shown in Figure 2. At 415 nm, the phosphor has the highest excitation energy, and the emission wavelength is near 660 nm, showing a narrow-band emission.
本发明实施例中，所述氮化物红粉选自峰值波长位于610-670nm范围内的氮化物红粉，该波段氮化物红粉光谱和氟氧化物红粉光谱之间耦合连续性较好。此外，植物生长用发光二极管器件的光合光子通量（PPF）与该波段能量贡献影响最大。优选的，所述氮化物红粉选自(Sr,Ca) xAlSiN 3:Eu y。该化学式中，含有Sr、Ca中的至少一种，Eu为掺杂元素，用于替代部分Sr元素或C元素，发挥激发剂的作用，且x+y=1。具体的，包括Sr xAlSiN 3:Eu y、Ca xAlSiN 3:Eu y、Sr x1Ca x2AlSiN 3:Eu y（其中x1+x2+y=1）。优选的氮化物红粉的外量子效率高、稳定性好。进一步优选的，所述氮化物红粉的峰值波长位于660nm，660nm波段对PPF贡献最好，有利于植物生长光合作用。 In the embodiment of the present invention, the nitride red powder is selected from the nitride red powder having a peak wavelength in the range of 610-670 nm, and the coupling continuity between the spectrum of the nitride red powder and the spectrum of the fluorooxide red powder is good. In addition, the photosynthetic photon flux (PPF) of light emitting diode devices for plant growth has the greatest impact on the energy contribution of this band. Preferably, the nitride red powder is selected from (Sr, Ca) x AlSiN 3 : Eu y . In the chemical formula, at least one of Sr and Ca is contained, and Eu is a doping element, which is used to replace part of the Sr element or the C element, and acts as an activator, and x + y = 1. Specifically, Sr x AlSiN 3 : Eu y , Ca x AlSiN 3 : Eu y , Sr x1 Ca x2 AlSiN 3 : Eu y (where x1 + x2 + y = 1). The preferred nitride red powder has high external quantum efficiency and good stability. Further preferably, the peak wavelength of the nitride red powder is at 660 nm, and the 660 nm band contributes best to PPF, which is beneficial to plant growth and photosynthesis.
本发明实施例中，第二荧光粉胶层225为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层。第二荧光粉胶层225在发射峰值位于440-470nm范围内的第二蓝光芯片224的激发下，发射利于植物生长的绿光和红光。所述第二荧光粉胶层225中，粉胶比（绿色荧光粉、第二红色荧光粉的总重量与硅胶的重量的比例）为1:3至1:5。如所述第一红色荧光粉过高，会导致荧光粉不易均匀分散，过低会导致点胶过程中，形成凸杯，二者均会对降低器件的光合光子通量。进一步的，所述绿色荧光粉、第二红色荧光粉的质量比为5:1至10:1，若所述第二红色荧光粉的比例过高，会降低光合光子通量。In the embodiment of the present invention, the second phosphor powder layer 225 is a phosphor powder layer formed of a green phosphor, a second red phosphor, and silica gel. The second phosphor powder layer 225, under the excitation of the second blue light chip 224 with an emission peak in the range of 440-470 nm, emits green and red light that is beneficial to plant growth. In the second phosphor powder layer 225, the powder-to-gel ratio (the ratio of the total weight of the green phosphor and the second red phosphor to the weight of the silica gel) is 1: 3 to 1: 5. For example, if the first red phosphor is too high, it will not be easy to uniformly disperse the phosphor, and if it is too low, a convex cup will be formed during the dispensing process, both of which will reduce the photosynthetic photon flux of the device. Further, the mass ratio of the green phosphor and the second red phosphor is 5: 1 to 10: 1. If the ratio of the second red phosphor is too high, the photosynthetic photon flux will be reduced.
其中，所述绿色荧光粉选自硅酸盐绿粉、氮氧化物绿粉和铝酸盐绿粉中的至少一种；所述第二红色荧光粉选自铝酸盐远红粉。所述绿色荧光粉更优选为铝酸盐绿粉，所述铝酸盐绿粉光效率高，半峰宽宽、连续性好，且稳定性好。所述铝酸盐远红粉在460nm的激发下激发效率最高，且激发体系稳定性好。The green phosphor is selected from at least one of silicate green powder, nitrogen oxide green powder, and aluminate green powder; and the second red phosphor is selected from aluminate far red powder. The green phosphor is more preferably an aluminate green powder, and the aluminate green powder has high light efficiency, wide half-peak width, good continuity, and good stability. The aluminate far red powder has the highest excitation efficiency under excitation at 460 nm, and the excitation system has good stability.
优选的，所述绿色荧光粉为峰值波长位于500-530nm范围内，进一步优选的，所述绿色荧光粉为(Y,Lu) m(Al,Ga) 5O 12:Ce n。该化学式中，(Y,Lu)表示含有Y、Lu中的至少一种，(Al,Ga)表示含有Al、Ga中的至少一种，Ce为掺杂元素，用于替代部分Y元素或Lu元素，发挥激发剂的作用，且m+n=3。 Preferably, the green phosphor has a peak wavelength in a range of 500-530 nm, and further preferably, the green phosphor is (Y, Lu) m (Al, Ga) 5 O 12 : Ce n . In the chemical formula, (Y, Lu) means that it contains at least one of Y and Lu, (Al, Ga) means that it contains at least one of Al and Ga, Ce is a doping element and is used to replace part of the Y element or Lu Element, which acts as an activator, and m + n = 3.
优选的，所述铝酸盐远红粉的峰值波长位于710-750 nm范围内，为植物生长提供远红外光。进一步优选的，所述铝酸盐远红粉为(Y,Lu) m(Al,Ga) 5O 12:Cr n。该化学式中，(Y,Lu)表示含有Y、Lu中的至少一种，(Al,Ga)表示含有Al、Ga中的至少一种，Cr为掺杂元素，用于替代部分Y元素或Lu元素，发挥激发剂的作用，且m+n=3。具体优选的，所述铝酸盐远红粉为峰值波长位于730 nm的Lu 3Al 5O 12:Cr，具有光效高和稳定性好的优点。采用730nm远红粉的激发光谱示意图（监测波长：730nm）如图3所示，在 460nm处，该荧光粉的激发能量最高，且发射波长位于760nm处附近。 Preferably, the aluminate far red powder has a peak wavelength in a range of 710-750 nm, and provides far-infrared light for plant growth. Further preferably, the aluminate far red powder is (Y, Lu) m (Al, Ga) 5 O 12 : Cr n . In the chemical formula, (Y, Lu) means that it contains at least one of Y and Lu, (Al, Ga) means that it contains at least one of Al and Ga, and Cr is a doping element, which is used to replace part of the Y element or Lu Element, which acts as an activator, and m + n = 3. Specifically, the aluminate far red powder is Lu 3 Al 5 O 12 : Cr with a peak wavelength at 730 nm, and has the advantages of high light efficiency and good stability. A schematic diagram of an excitation spectrum (monitoring wavelength: 730 nm) using a 730 nm far red powder is shown in FIG. 3. At 460 nm, the phosphor has the highest excitation energy and the emission wavelength is near 760 nm.
进一步优选的，在上述实施例的基础上，第一蓝光芯片222的发射峰值位于415nm，第二蓝光芯片224的发射峰值位于460nm。由此激发出来的光谱，其具有415nm、460nm、660nm波峰，且发光强度合适，有利于植物的生长。进一步优选的，所述植物生长用发光二极管的光谱具有以下波峰：415nm、460nm、660nm，且415nm、460nm、660nm峰值强度比为：(0.1-0.6):1:(2.0-5.0)。此时，得到的光谱合适，且强度比例较好，特别有利于调控植物生长发育。Further preferably, based on the above embodiment, the emission peak of the first blue light chip 222 is located at 415 nm, and the emission peak of the second blue light chip 224 is located at 460 nm. The excited spectrum has peaks of 415nm, 460nm, and 660nm, and the luminous intensity is appropriate, which is beneficial to the growth of plants. Further preferably, the spectrum of the light emitting diode for plant growth has the following peaks: 415 nm, 460 nm, 660 nm, and the peak intensity ratios of 415 nm, 460 nm, and 660 nm are: (0.1-0.6): 1: (2.0-5.0). At this time, the obtained spectrum is suitable and the intensity ratio is good, which is particularly beneficial for regulating plant growth and development.
作为一个最佳实施例，所述植物生长用发光二极管包括AlN/SiC复合基板，以及固定在所述AlN/SiC复合基板表面的LED芯片，所述LED芯片包括并列设置在散热基板221同一表面的第一蓝光芯片222和第二蓝光芯片224，且第一蓝光芯片222背离散热基板221的表面设置有第一荧光粉胶层223，第二蓝光芯片224背离散热基板221的表面设置有第二荧光粉胶层225，其中，As a preferred embodiment, the light-emitting diode for plant growth includes an AlN / SiC composite substrate, and an LED chip fixed on a surface of the AlN / SiC composite substrate. The LED chip includes a LED chip disposed side by side on the same surface of the heat dissipation substrate 221. The first blue light chip 222 and the second blue light chip 224, and the surface of the first blue light chip 222 behind the discrete thermal substrate 221 is provided with a first phosphor adhesive layer 223, and the surface of the second blue light chip 224 behind the discrete thermal substrate 221 is provided with a second fluorescent light Powder glue layer 225,
第一蓝光芯片222的发射峰值位于415nm，第二蓝光芯片224的发射峰值位于460nm；The emission peak of the first blue light chip 222 is at 415 nm, and the emission peak of the second blue light chip 224 is at 460 nm;
第一荧光粉胶层223为由第一红色荧光粉和硅胶形成的荧光粉胶层，且第一荧光粉胶层223中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉，所述氟氧化物红粉为Mg 4GeO 5.5F:Mn，所述氮化物红粉为峰值波长位于660nm的((Sr,Ca) xAlSiN 3:Eu y，且x+y=11。 The first phosphor powder layer 223 is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer 223 is a mixed fluorescence of a fluorooxide red powder and a nitride red powder. Powder, the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn, and the nitride red powder is ((Sr, Ca) x AlSiN 3 : Eu y ) with a peak wavelength at 660 nm, and x + y = 11.
第二荧光粉胶层225为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层，所述第二红色荧光粉为峰值波长位于730 nm的Lu 3Al 5O 12:Cr，所述绿色荧光粉为峰值波长位于500-530nm范围内的(Y,Lu) m(Al,Ga) 5O 12:Ce n，其中，m+n=3。 The second phosphor powder layer 225 is a phosphor powder layer formed of a green phosphor, a second red phosphor, and silica gel. The second red phosphor is Lu 3 Al 5 O 12 : Cr with a peak wavelength at 730 nm. The green phosphor is (Y, Lu) m (Al, Ga) 5 O 12 : Ce n with a peak wavelength in the range of 500-530 nm, where m + n = 3.
所述植物生长用发光二极管的光谱具有以下波峰：415nm、460nm、660nm，且415nm、460nm、660nm峰值强度比为：(0.2-0.3):1:(2.5-3.5)。The spectrum of the light emitting diode for plant growth has the following peaks: 415nm, 460nm, 660nm, and the peak intensity ratios of 415nm, 460nm, and 660nm are: (0.2-0.3): 1: (2.5-3.5).
本发明实施例提供的植物生长用发光二极管，还可以包括银胶、支架、金线或合金线等。The light-emitting diodes for plant growth provided by the embodiments of the present invention may further include silver glue, a bracket, a gold wire, or an alloy wire.
下面结合具体实施例进行说明。The following describes it with reference to specific embodiments.
实施例1Example 1
一种植物生长用发光二极管，包括AlN复合基板，以及固定在所述AlN/SiC复合基板表面的LED芯片，所述LED芯片包括并列设置在所述散热基板同一表面的第一蓝光芯片和第二蓝光芯片，且所述第一蓝光芯片背离所述散热基板的表面设置有第一荧光粉胶层，所述第二蓝光芯片背离所述散热基板的表面设置有第二荧光粉胶层，其中，A light emitting diode for plant growth includes an AlN composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate. The LED chip includes a first blue light chip and a second blue chip which are arranged side by side on the same surface of the heat dissipation substrate. A blue phosphor chip, and a surface of the first blue chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer, and a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, wherein,
所述第一蓝光芯片的发射峰值位于415nm，所述第二蓝光芯片的发射峰值位于460nm；An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
所述第一荧光粉胶层为由第一红色荧光粉和硅胶形成的荧光粉胶层，且所述第一荧光粉胶层中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉，所述氟氧化物红粉为Mg 4GeO 5.5F:Mn，所述氮化物红粉为峰值波长位于660nm的((Sr,Ca) xAlSiN 3:Eu y，且x+y=1； The first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder. Mixed phosphor, the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn, and the nitride red powder is ((Sr, Ca) x AlSiN 3 : Eu y ) with a peak wavelength at 660 nm, and x + y = 1;
所述第二荧光粉胶层为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层，所述第二红色荧光粉为峰值波长位于730 nm的Lu 3Al 5O 12:Cr，所述绿色荧光粉为峰值波长位于500-530nm范围内的(Y,Lu) m(Al,Ga) 5O 12:Ce n，其中，m+n=3。 The second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm. The green phosphor is (Y, Lu) m (Al, Ga) 5 O 12 : Ce n with a peak wavelength in the range of 500-530 nm, where m + n = 3.
实施例2Example 2
一种植物生长用发光二极管，包括AlN/SiC复合基板，以及固定在所述AlN/SiC复合基板表面的LED芯片，所述LED芯片包括并列设置在所述散热基板同一表面的第一蓝光芯片和第二蓝光芯片，且所述第一蓝光芯片背离所述散热基板的表面设置有第一荧光粉胶层，所述第二蓝光芯片背离所述散热基板的表面设置有第二荧光粉胶层，其中，A light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate. The LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate. A second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer, and a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
所述第一蓝光芯片的发射峰值位于415nm，所述第二蓝光芯片的发射峰值位于460nm；An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
所述第一荧光粉胶层为由第一红色荧光粉和硅胶形成的荧光粉胶层，且所述第一荧光粉胶层中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉，所述氟氧化物红粉为Mg 4GeO 5.5F:Mn，所述氮化物红粉为峰值波长位于660nm的((Sr,Ca) xAlSiN 3:Eu y，且x+y=1； The first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder. Mixed phosphor, the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn, and the nitride red powder is ((Sr, Ca) x AlSiN 3 : Eu y ) with a peak wavelength at 660 nm, and x + y = 1;
所述第二荧光粉胶层为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层，所述第二红色荧光粉为峰值波长位于730 nm的Lu 3Al 5O 12:Cr，所述绿色荧光粉为峰值波长位于500-530nm范围内的(Y,Lu) m(Al,Ga) 5O 12:Ce n，其中，m+n=3。 The second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm. The green phosphor is (Y, Lu) m (Al, Ga) 5 O 12 : Ce n with a peak wavelength in the range of 500-530 nm, where m + n = 3.
实施例3Example 3
一种植物生长用发光二极管，包括AlN/SiC复合基板，以及固定在所述AlN/SiC复合基板表面的LED芯片，所述LED芯片包括并列设置在所述散热基板同一表面的第一蓝光芯片和第二蓝光芯片，且所述第一蓝光芯片背离所述散热基板的表面设置有第一荧光粉胶层，所述第二蓝光芯片背离所述散热基板的表面设置有第二荧光粉胶层，其中，A light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate. The LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate. A second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer, and a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
所述第一蓝光芯片的发射峰值位于415nm，所述第二蓝光芯片的发射峰值位于460nm；An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
所述第一荧光粉胶层为由第一红色荧光粉和硅胶形成的荧光粉胶层，且所述第一荧光粉胶层中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉，所述氟氧化物红粉为Mg 4GeO 5.5F:Mn，所述氮化物红粉为峰值波长位于650nm的((Sr,Ca) xAlSiN 3:Eu y，且x+y=1； The first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder. Mixed phosphor, the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn, and the nitride red powder is ((Sr, Ca) x AlSiN 3 : Eu y with a peak wavelength at 650 nm, and x + y = 1;
所述第二荧光粉胶层为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层，所述第二红色荧光粉为峰值波长位于730 nm的Lu 3Al 5O 12:Cr，所述绿色荧光粉为峰值波长位于500-530nm范围内的(Y,Lu) m(Al,Ga) 5O 12:Ce n，其中，m+n=3。 The second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm. The green phosphor is (Y, Lu) m (Al, Ga) 5 O 12 : Ce n with a peak wavelength in the range of 500-530 nm, where m + n = 3.
实施例4Example 4
一种植物生长用发光二极管，包括AlN/SiC复合基板，以及固定在所述AlN/SiC复合基板表面的LED芯片，所述LED芯片包括并列设置在所述散热基板同一表面的第一蓝光芯片和第二蓝光芯片，且所述第一蓝光芯片背离所述散热基板的表面设置有第一荧光粉胶层，所述第二蓝光芯片背离所述散热基板的表面设置有第二荧光粉胶层，其中，A light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate. The LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate. A second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer, and a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
所述第一蓝光芯片的发射峰值位于415nm，所述第二蓝光芯片的发射峰值位于460nm；An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
所述第一荧光粉胶层为由第一红色荧光粉和硅胶形成的荧光粉胶层，且所述第一荧光粉胶层中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉，所述氟氧化物红粉为Mg 4GeO 5.5F:Mn，所述氮化物红粉为峰值波长位于670nm的((Sr,Ca) xAlSiN 3:Eu y，且x+y=1； The first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder. Mixed phosphor, the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn, and the nitride red powder is ((Sr, Ca) x AlSiN 3 : Eu y ) with a peak wavelength at 670 nm, and x + y = 1;
所述第二荧光粉胶层为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层，所述第二红色荧光粉为峰值波长位于730 nm的Lu 3Al 5O 12:Cr，所述绿色荧光粉为峰值波长位于500-530nm范围内的(Y,Lu) m(Al,Ga) 5O 12:Ce n，其中，m+n=3。 The second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm. The green phosphor is (Y, Lu) m (Al, Ga) 5 O 12 : Ce n with a peak wavelength in the range of 500-530 nm, where m + n = 3.
实施例5Example 5
一种植物生长用发光二极管，包括AlN/SiC复合基板，以及固定在所述AlN/SiC复合基板表面的LED芯片，所述LED芯片包括并列设置在所述散热基板同一表面的第一蓝光芯片和第二蓝光芯片，且所述第一蓝光芯片背离所述散热基板的表面设置有第一荧光粉胶层，所述第二蓝光芯片背离所述散热基板的表面设置有第二荧光粉胶层，其中，A light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate. The LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate. A second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer, and a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
所述第一蓝光芯片的发射峰值位于415nm，所述第二蓝光芯片的发射峰值位于460nm；An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
所述第一荧光粉胶层为由第一红色荧光粉和硅胶形成的荧光粉胶层，且所述第一荧光粉胶层中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉，所述氟氧化物红粉为Mg 4GeO 5.5F:Mn，所述氮化物红粉为峰值波长位于660nm的((Sr,Ca) xAlSiN 3:Eu y，且x+y=1； The first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder. Mixed phosphor, the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn, and the nitride red powder is ((Sr, Ca) x AlSiN 3 : Eu y ) with a peak wavelength at 660 nm, and x + y = 1;
所述第二荧光粉胶层为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层，所述第二红色荧光粉为峰值波长位于730 nm的Lu 3Al 5O 12:Cr，所述绿色荧光粉为 (Sr,Ba) 2SiO 4:Eu 。 The second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm. The green phosphor is (Sr, Ba) 2 SiO 4 : Eu .
实施例6Example 6
一种植物生长用发光二极管，包括AlN/SiC复合基板，以及固定在所述AlN/SiC复合基板表面的LED芯片，所述LED芯片包括并列设置在所述散热基板同一表面的第一蓝光芯片和第二蓝光芯片，且所述第一蓝光芯片背离所述散热基板的表面设置有第一荧光粉胶层，所述第二蓝光芯片背离所述散热基板的表面设置有第二荧光粉胶层，其中，A light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate. The LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate. A second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer, and a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
所述第一蓝光芯片的发射峰值位于415nm，所述第二蓝光芯片的发射峰值位于460nm；An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
所述第一荧光粉胶层为由第一红色荧光粉和硅胶形成的荧光粉胶层，且所述第一荧光粉胶层中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉，所述氟氧化物红粉为Mg 4GeO 5.5F:Mn，所述氮化物红粉为峰值波长位于660nm的((Sr,Ca) xAlSiN 3:Eu y，且x+y=1； The first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder. Mixed phosphor, the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn, and the nitride red powder is ((Sr, Ca) x AlSiN 3 : Eu y ) with a peak wavelength at 660 nm, and x + y = 1;
所述第二荧光粉胶层为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层，所述第二红色荧光粉为峰值波长位于710 nm的Lu 3Al 5O 12:Cr，所述绿色荧光粉为峰值波长位于500-530nm范围内的(Y,Lu) m(Al,Ga) 5O 12:Ce n，其中，m+n=3。 The second phosphor powder layer is a phosphor powder layer formed by a green phosphor powder, a second red phosphor powder and silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr with a peak wavelength at 710 nm. The green phosphor is (Y, Lu) m (Al, Ga) 5 O 12 : Ce n with a peak wavelength in the range of 500-530 nm, where m + n = 3.
实施例7Example 7
一种植物生长用发光二极管，包括AlN/SiC复合基板，以及固定在所述AlN/SiC复合基板表面的LED芯片，所述LED芯片包括并列设置在所述散热基板同一表面的第一蓝光芯片和第二蓝光芯片，且所述第一蓝光芯片背离所述散热基板的表面设置有第一荧光粉胶层，所述第二蓝光芯片背离所述散热基板的表面设置有第二荧光粉胶层，其中，A light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate. The LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate. A second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer, and a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
所述第一蓝光芯片的发射峰值位于415nm，所述第二蓝光芯片的发射峰值位于460nm；An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
所述第一荧光粉胶层为由第一红色荧光粉和硅胶形成的荧光粉胶层，且所述第一荧光粉胶层中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉，所述氟氧化物红粉为Mg 4GeO 5.5F:Mn，所述氮化物红粉为峰值波长位于660nm的((Sr,Ca) xAlSiN 3:Eu y，且x+y=1； The first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder. Mixed phosphor, the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn, and the nitride red powder is ((Sr, Ca) x AlSiN 3 : Eu y ) with a peak wavelength at 660 nm, and x + y = 1;
所述第二荧光粉胶层为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层，所述第二红色荧光粉为峰值波长位于740 nm的Lu 3Al 5O 12:Cr，所述绿色荧光粉为峰值波长位于500-530nm范围内的(Y,Lu) m(Al,Ga) 5O 12:Ce n，其中，m+n=3。 The second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 740 nm. The green phosphor is (Y, Lu) m (Al, Ga) 5 O 12 : Ce n with a peak wavelength in the range of 500-530 nm, where m + n = 3.
对比例1Comparative Example 1
一种植物生长用发光二极管，包括AlN/SiC复合基板，以及固定在所述AlN/SiC复合基板表面的LED芯片，所述LED芯片包括并列设置在所述散热基板同一表面的第一蓝光芯片和第二蓝光芯片，且所述第一蓝光芯片背离所述散热基板的表面设置有第一荧光粉胶层，所述第二蓝光芯片背离所述散热基板的表面设置有第二荧光粉胶层，其中，A light emitting diode for plant growth includes an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate. The LED chip includes a first blue light chip and a first blue light chip arranged side by side on the same surface of the heat dissipation substrate. A second blue light chip, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer, and a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, among them,
所述第一蓝光芯片的发射峰值位于415nm，所述第二蓝光芯片的发射峰值位于460nm；An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
所述第一荧光粉胶层为由氮化物红粉和硅胶形成的荧光粉胶层，且所述氮化物红粉为峰值波长位于660nm的((Sr,Ca) xAlSiN 3:Eu y，且x+y=1； The first phosphor powder layer is a phosphor powder layer formed of nitride red powder and silica gel, and the nitride red powder is ((Sr, Ca) x AlSiN 3 : Eu y with a peak wavelength at 660 nm, and x + y = 1;
所述第二荧光粉胶层为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层，所述第二红色荧光粉为峰值波长位于730 nm的Lu 3Al 5O 12:Cr，所述绿色荧光粉为峰值波长位于500-530nm范围内的(Y,Lu) m(Al,Ga) 5O 12:Ce n，其中，m+n=3。 The second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm. The green phosphor is (Y, Lu) m (Al, Ga) 5 O 12 : Ce n with a peak wavelength in the range of 500-530 nm, where m + n = 3.
比较例2Comparative Example 2
对比例封装采用多芯片耦合形式实现，所述芯片为蓝光（460nm）、红光（660nm）和远红光（730nm）芯片的组合，其红蓝光谱比例同比较例实施例1-8相同。The comparative package is realized by multi-chip coupling. The chip is a combination of blue (460 nm), red (660 nm), and far red (730 nm) chips, and its red-blue spectral ratio is the same as that of Comparative Examples 1-8.
本发明实施例1-8以及对比例的光色数据如表1所示。The light color data of Examples 1-8 and Comparative Examples of the present invention are shown in Table 1.
表1Table 1
序号 Serial number 光量子效率(PPF,µmol/J） Light quantum efficiency (PPF, µmol / J)
实施例1 Example 1 2.6 2.6
实施例2 Example 2 2.6 2.6
实施例4 Example 4 2.3 2.3
实施例5 Example 5 2.2 2.2
实施例6 Example 6 2.1 2.1
实施例7 Example 7 2.4 2.4
实施例8 Example 8 2.5 2.5
比较例1 Comparative Example 1 2.0 2.0
比较例2 Comparative Example 2 2.5 2.5
由上表可见，实施例1-7提供的植物生长用发光二极管，可以达到对比例2的光量子效率，甚至更高。而与对比了1相比，采用氟氧化物红粉的实施例1-7的光量子效率明显升高，且增长可达30%。It can be seen from the above table that the light-emitting diodes for plant growth provided in Examples 1-7 can achieve the optical quantum efficiency of Comparative Example 2 even higher. Compared with Comparative Example 1, the optical quantum efficiency of Examples 1-7 using the oxyfluoride red powder was significantly increased, and the growth could reach 30%.
实施例1-7中，采用氮化物660nm峰值波长荧光粉的样品相对采用其它峰值波长荧光粉样品的PPF较高。采用660nm峰值波长的氮化物荧光粉和氟氧化物荧光粉采用一定比例的组合，其在红光部分的发射强度显著增强。采用Mg 4GeO 5.5F:Mn和((Sr,Ca) xAlSiN 3:Eu y，且x+y=1的发射光谱对比示意图（激发波长：415nm）如图4所示。同时，组合后样品的PPF显著得到提升。 In Examples 1-7, the samples using the nitride 660 nm peak wavelength phosphor had a higher PPF than the samples using other peak wavelength phosphors. A combination of a nitride phosphor and a oxyfluoride phosphor with a peak wavelength of 660 nm uses a certain ratio, and its emission intensity in the red light portion is significantly enhanced. A comparison diagram of the emission spectrum (excitation wavelength: 415nm) using Mg 4 GeO 5.5 F: Mn and ((Sr, Ca) x AlSiN 3 : Eu y , and x + y = 1) is shown in Figure 4. At the same time, the combined samples The PPF has been significantly improved.
表2为实施例1和实施例2在室温条件下点亮光色数据（5000K）可以看出采用AlN/SiC复合基板相对于AlN陶瓷基板的在点亮1000h和2000h后光合光子通量（PPF）具有明显的优势。Table 2 shows the light color data (5000K) of Example 1 and Example 2 at room temperature. It can be seen that the photosynthetic photon flux (PPF) of the AlN / SiC composite substrate relative to the AlN ceramic substrate after 1000h and 2000h lighting ) Has obvious advantages.
表2Table 2
实施例 Examples 点亮1000h 光量子效率（PPF） 1000h light quantum efficiency (PPF) 点亮200h 光量子效率（PPF） 200h light quantum efficiency (PPF)
实施例1 Example 1 2.5µmol/J 2.5µmol / J 2.4µmol/J 2.4µmol / J
实施例2 Example 2 2.55µmol/J 2.55µmol / J 2.5µmol/J 2.5µmol / J
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。The above description is only the preferred embodiments of the present invention and is not intended to limit the present invention. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention shall be included in the protection of the present invention. Within range.

Claims (10)

  1. 一种植物生长用发光二极管，其特征在于，包括散热基板，以及固定在所述散热基板表面的LED芯片，所述LED芯片包括并列设置在所述散热基板同一表面的第一蓝光芯片和第二蓝光芯片，且所述第一蓝光芯片背离所述散热基板的表面设置有第一荧光粉胶层，所述第二蓝光芯片背离所述散热基板的表面设置有第二荧光粉胶层，其中，A light emitting diode for plant growth, comprising a heat dissipation substrate and an LED chip fixed on the surface of the heat dissipation substrate, the LED chip includes a first blue light chip and a second A blue phosphor chip, and a surface of the first blue chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer, and a surface of the second blue light chip facing away from the heat dissipation substrate is provided with a second phosphor powder layer, wherein,
    所述第一蓝光芯片的发射峰值位于400-420nm范围内，所述第二蓝光芯片的发射峰值位于440-470nm范围内；The emission peak of the first blue light chip is in the range of 400-420nm, and the emission peak of the second blue light chip is in the range of 440-470nm;
    所述第一荧光粉胶层为由第一红色荧光粉和硅胶形成的荧光粉胶层，且所述第一荧光粉胶层中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉，所述氟氧化物红粉为Mg 4GeO 5.5F:Mn，所述氮化物红粉选自峰值波长位于610-670nm范围内的氮化物红粉； The first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder. Mixed phosphor, the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn, and the nitride red powder is selected from the nitride red powder having a peak wavelength in the range of 610-670nm;
    所述第二荧光粉胶层为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层。The second phosphor powder layer is a phosphor powder layer formed by a green phosphor, a second red phosphor, and a silica gel.
  2. 如权利要求1所述的植物生长用发光二极管，其特征在于，所述氮化物红粉选自((Sr,Ca) xAlSiN 3:Eu y，且x+y=1。 The light-emitting diode for plant growth according to claim 1, wherein the nitride red powder is selected from ((Sr, Ca) x AlSiN 3 : Eu y , and x + y = 1.
  3. 如权利要求2所述的植物生长用发光二极管，其特征在于，所述氮化物红粉的峰值波长位于660nm。The light emitting diode for plant growth according to claim 2, wherein a peak wavelength of the nitride red powder is located at 660 nm.
  4. 如权利要求1所述的植物生长用发光二极管，其特征在于，所述绿色荧光粉选自硅酸盐绿粉、氮氧化物绿粉和铝酸盐绿粉中的至少一种；所述第二红色荧光粉选自铝酸盐远红粉。The light-emitting diode for plant growth according to claim 1, wherein the green phosphor is at least one selected from the group consisting of silicate green powder, nitrogen oxide green powder, and aluminate green powder; The two red phosphors are selected from aluminate far red powder.
  5. 如权利要求4所述的植物生长用发光二极管，其特征在于，所述绿色荧光粉为峰值波长位于500-530nm范围内的(Y,Lu) m(Al,Ga) 5O 12:Ce n，其中，m+n=3。 The light-emitting diode for plant growth according to claim 4, wherein the green phosphor is (Y, Lu) m (Al, Ga) 5 O 12 : Ce n having a peak wavelength in a range of 500-530 nm, Where m + n = 3.
  6. 如权利要求4所述的植物生长用发光二极管，其特征在于，所述铝酸盐远红粉选自峰值波长位于710-750 nm范围内的(Y,Lu) 3(Al,Ga) 5O 12:Cr。 The light-emitting diode for plant growth according to claim 4, wherein the aluminate far red powder is selected from (Y, Lu) 3 (Al, Ga) 5 O 12 having a peak wavelength in a range of 710-750 nm. : Cr.
  7. 如权利要求6所述的植物生长用发光二极管，其特征在于，所述铝酸盐远红粉为峰值波长位于730 nm的Lu 3Al 5O 12:Cr。 The light-emitting diode for plant growth according to claim 6, wherein the aluminate far red powder is Lu 3 Al 5 O 12 : Cr with a peak wavelength at 730 nm.
  8. 如权利要求1-7任一项所述的植物生长用发光二极管，其特征在于，所述第一蓝光芯片的发射峰值位于415nm，所述第二蓝光芯片的发射峰值位于460nm。The light emitting diode for plant growth according to any one of claims 1 to 7, wherein an emission peak of the first blue light chip is located at 415 nm, and an emission peak of the second blue light chip is located at 460 nm.
  9. 如权利要求1-7任一项所述的植物生长用发光二极管，其特征在于，所述植物生长用发光二极管的光谱具有以下波峰：415nm、460nm、660nm，且415nm、460nm、660nm峰值强度比为：(0.1-0.6):1:(2.0-5.0)。The light emitting diode for plant growth according to any one of claims 1 to 7, characterized in that the spectrum of the light emitting diode for plant growth has the following peaks: 415nm, 460nm, 660nm, and a peak intensity ratio of 415nm, 460nm, 660nm It is: (0.1-0.6): 1: (2.0-5.0).
  10. 如权利要求1所述的植物生长用发光二极管，其特征在于，包括AlN/SiC复合基板，以及固定在所述AlN/SiC复合基板表面的LED芯片，所述LED芯片包括并列设置在所述散热基板同一表面的第一蓝光芯片和第二蓝光芯片，且所述第一蓝光芯片背离所述散热基板的表面设置有第一荧光粉胶层，所述第二蓝光芯片背离所述散热基板的表面设置有第二荧光粉胶层，其中，The light-emitting diode for plant growth according to claim 1, further comprising an AlN / SiC composite substrate and an LED chip fixed on a surface of the AlN / SiC composite substrate, wherein the LED chip includes a heat sink disposed in parallel with the heat sink. A first blue light chip and a second blue light chip on the same surface of the substrate, and a surface of the first blue light chip facing away from the heat dissipation substrate is provided with a first phosphor powder layer, and the second blue light chip is facing away from the surface of the heat dissipation substrate A second phosphor powder layer is provided, wherein:
    所述第一蓝光芯片的发射峰值位于415nm，所述第二蓝光芯片的发射峰值位于460nm；An emission peak of the first blue light chip is at 415 nm, and an emission peak of the second blue light chip is at 460 nm;
    所述第一荧光粉胶层为由第一红色荧光粉和硅胶形成的荧光粉胶层，且所述第一荧光粉胶层中的第一红色荧光粉为氟氧化物红粉和氮化物红粉的混合荧光粉，所述氟氧化物红粉为Mg 4GeO 5.5F:Mn，所述氮化物红粉为峰值波长位于660nm的((Sr,Ca) xAlSiN 3:Eu y，且x+y=1； The first phosphor powder layer is a phosphor powder layer formed of a first red phosphor powder and silica gel, and the first red phosphor powder in the first phosphor powder layer is a fluorooxide red powder and a nitride red powder. Mixed phosphor, the fluorooxide red powder is Mg 4 GeO 5.5 F: Mn, and the nitride red powder is ((Sr, Ca) x AlSiN 3 : Eu y ) with a peak wavelength at 660 nm, and x + y = 1;
    所述第二荧光粉胶层为由绿色荧光粉、第二红色荧光粉和硅胶形成的荧光粉胶层，所述第二红色荧光粉为峰值波长位于730 nm的Lu 3Al 5O 12:Cr，所述绿色荧光粉为峰值波长位于500-530nm范围内的(Y,Lu) m(Al,Ga) 5O 12:Ce n，其中，m+n=3； The second phosphor powder layer is a phosphor powder layer formed of a green phosphor powder, a second red phosphor powder, and a silica gel, and the second red phosphor powder is Lu 3 Al 5 O 12 : Cr having a peak wavelength at 730 nm. The green phosphor is (Y, Lu) m (Al, Ga) 5 O 12 : Ce n with a peak wavelength in the range of 500-530 nm, where m + n = 3;
    所述植物生长用发光二极管的光谱具有以下波峰：415nm、460nm、660nm，且415nm、460nm、660nm峰值强度比为：(0.2-0.3):1:(2.5-3.5)。The spectrum of the light emitting diode for plant growth has the following peaks: 415nm, 460nm, 660nm, and the peak intensity ratios of 415nm, 460nm, and 660nm are: (0.2-0.3): 1: (2.5-3.5).
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220205599A1 (en) * 2020-12-28 2022-06-30 Samsung Electronics Co., Ltd. Led module and lighting apparatus

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109192843B (en) * 2018-07-10 2019-08-13 旭宇光电（深圳）股份有限公司 Plant growth light emitting diode
CN109817791B (en) * 2019-01-10 2020-07-10 深圳清华大学研究院 Light emitting device for plant illumination
CN110224054B (en) * 2019-05-10 2020-04-24 深圳清华大学研究院 Single-color LED for plant illumination and plant illumination lamp
JP7541233B2 (en) 2020-08-31 2024-08-28 日亜化学工業株式会社 Nitride phosphor and light emitting device
CN112602489B (en) * 2020-12-30 2023-08-11 福建省中科生物股份有限公司 Double-peak blue light for promoting plant growth
CN112602490B (en) * 2020-12-31 2022-11-01 陕西电子信息集团光电科技有限公司 LED plant illumination light filling system suitable for fig is grown
CN112930915A (en) * 2021-01-29 2021-06-11 浙江英特来光电科技有限公司 Packaged bowl and cup lamp with adjustable light source

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103199180A (en) * 2012-01-09 2013-07-10 诠兴开发科技股份有限公司 Light-emitting diode (LED) used for plant growth
CN105702669A (en) * 2016-03-31 2016-06-22 苏州汉克山姆照明科技有限公司 Special broadband blue light LED for plant growth
KR20170090317A (en) * 2016-01-28 2017-08-07 서울반도체 주식회사 Light emitting diode device for growing plants and manufacturing method of the same
CN107601860A (en) * 2017-10-13 2018-01-19 华南农业大学 A kind of emitting red light glass ceramics, its preparation method and plant lamp
US20180098510A1 (en) * 2016-10-06 2018-04-12 Korea Institute Of Science And Technology Method of harvesting cruciferous sprouts for increasing the amount of glucosinolate in cruciferous sprouts
CN109192843A (en) * 2018-07-10 2019-01-11 旭宇光电（深圳）股份有限公司 Plant growth light emitting diode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5723898B2 (en) * 2013-01-15 2015-05-27 昭和電工株式会社 Fruit and vegetable cultivation method
CN205664192U (en) * 2016-03-28 2016-10-26 安徽皖投新辉光电科技有限公司 Complex spectrum LED white light vegetation lamp
CN106784235A (en) * 2016-11-05 2017-05-31 杨华琼 A kind of light emitting diode of extraordinary spectrum and its application
CN107706282A (en) * 2017-07-04 2018-02-16 区峰 The generation method of plant growth and the LED ecology light sources of human eye demand can be met simultaneously

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103199180A (en) * 2012-01-09 2013-07-10 诠兴开发科技股份有限公司 Light-emitting diode (LED) used for plant growth
KR20170090317A (en) * 2016-01-28 2017-08-07 서울반도체 주식회사 Light emitting diode device for growing plants and manufacturing method of the same
CN105702669A (en) * 2016-03-31 2016-06-22 苏州汉克山姆照明科技有限公司 Special broadband blue light LED for plant growth
US20180098510A1 (en) * 2016-10-06 2018-04-12 Korea Institute Of Science And Technology Method of harvesting cruciferous sprouts for increasing the amount of glucosinolate in cruciferous sprouts
CN107601860A (en) * 2017-10-13 2018-01-19 华南农业大学 A kind of emitting red light glass ceramics, its preparation method and plant lamp
CN109192843A (en) * 2018-07-10 2019-01-11 旭宇光电（深圳）股份有限公司 Plant growth light emitting diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220205599A1 (en) * 2020-12-28 2022-06-30 Samsung Electronics Co., Ltd. Led module and lighting apparatus
US11560986B2 (en) * 2020-12-28 2023-01-24 Samsung Electronics Co., Ltd. LED module and lighting apparatus

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