CN109817791B - Light emitting device for plant illumination - Google Patents
Light emitting device for plant illumination Download PDFInfo
- Publication number
- CN109817791B CN109817791B CN201910022825.6A CN201910022825A CN109817791B CN 109817791 B CN109817791 B CN 109817791B CN 201910022825 A CN201910022825 A CN 201910022825A CN 109817791 B CN109817791 B CN 109817791B
- Authority
- CN
- China
- Prior art keywords
- red
- light
- chip
- far
- equal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention belongs to the technical field of illumination, and particularly relates to a light-emitting device for plant illumination. A light-emitting device for plant illumination comprises a substrate and a light-emitting layer arranged on the substrateThe LED fluorescent lamp comprises a blue light L ED chip, a red powder fluorescent layer and a far-red powder fluorescent layer which are sequentially arranged on a substrate along a light emitting direction, wherein the red powder fluorescent layer contains red fluorescent powder, the far-red powder fluorescent layer contains far-red fluorescent powder, and the chemical general formula of the far-red fluorescent powder is A3‑xMyGa5‑y‑zO12‑yNy:(zCr3+,xCe3+) Wherein A is selected from at least one of L u and Y, A must contain L u, M is selected from at least one of Si, Zr and Hf, x is more than or equal to 0.001 and less than or equal to 0.05, z is more than or equal to 0.01 and less than or equal to 0.08, and Y is more than or equal to 0.01 and less than or equal to 0.8.
Description
Technical Field
The invention belongs to the technical field of illumination, and particularly relates to a light-emitting device for plant illumination.
Background
The luminous environment is one of the indispensable important physical environmental factors of plant growth and development, and the control of each stage of plant growth and development through light quality regulation is an important technology. Therefore, the plant lighting technology is widely applied to various crop fields such as agricultural production, fruit and vegetable planting, flower cultivation and the like at present. Although the plant lighting is applied in a scale which is not as wide as that of general lighting, the plant lighting is gradually accepted by the market in view of the superiority and the particularity of the plant lighting, and the market demand is gradually increased.
The plant lighting lamp is widely formed by mixing lamp beads of about 450nm, 660nm and 730nm at present, but the preparation cost is very high, and particularly, the price of a 730nm chip is 10-20 times that of a 450nm chip. And is influenced by chip components and technology, and the light quantum efficiency of the 730nm chip has limited promotion space. Therefore, the prior art is in need of improvement.
Disclosure of Invention
The invention aims to provide a light-emitting device for plant illumination, and aims to solve the technical problem of high cost of the conventional light-emitting device for plant illumination.
In order to achieve the purpose, the invention adopts the following technical scheme:
on one hand, the invention provides a light-emitting device for plant illumination, which comprises a substrate, and a blue light L ED chip, a red powder fluorescent layer and a far-red powder fluorescent layer which are positioned on the substrate and sequentially arranged along a light-emitting direction, wherein the red powder fluorescent layer contains red fluorescent powder, and the far-red powder fluorescent layer contains far-red fluorescent powder;
the chemical general formula of the far-red fluorescent powder is as follows: a. the3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+) Wherein A is selected from at least one of L u and Y, A must contain L u, M is selected from at least one of Si, Zr and Hf, x is more than or equal to 0.001 and less than or equal to 0.05, z is more than or equal to 0.01 and less than or equal to 0.08, and Y is more than or equal to 0.01 and less than or equal to 0.8.
The light-emitting device for plant illumination provided by the invention has the advantages that the red-powder fluorescent layer is excited to emit light by the blue light L ED chip, then the blue light L ED chip and the excited red-powder fluorescent layer jointly excite the far-red-powder fluorescent layer to emit light, and the excitation efficiency of the far-red-powder fluorescent layer can be improved, in the light-emitting device, the blue light chip L ED is adopted to match and respond the red fluorescent powder and the special far-red-light fluorescent powder to realize the emission of the far-red light with the emission peak value being 730nm, so the preparation cost of the light-emitting device is obviously lower than that of the existing light-emitting device directly adopting the 730nm chip, the far-red-light fluorescent powder suitable for the joint excitation of the blue light and the red light has the characteristics of high stability and high external quantum efficiency, the photosynthetic photon flux and the stability of the whole light-emitting device are higher than those of the directly adopting the 730nm chip, and the 730nm emission intensity emitted by the light-emitting device is far higher than that the far-red-light fluorescent powder is excited by only.
On the other hand, the invention also provides a light-emitting device for plant illumination, which comprises a substrate, and chips and a far-red powder fluorescent layer which are positioned on the substrate and are sequentially arranged along the light-emitting direction, wherein the chips comprise a blue light L ED chip and a red light L ED chip, and the far-red powder fluorescent layer contains far-red fluorescent powder;
the chemical general formula of the far-red fluorescent powder is as follows: a. the3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+) Wherein A is selected from at least one of L u and Y, A must contain L u, M is selected from at least one of Si, Zr and Hf, and the content of A is more than or equal to 0.001x≤0.05，0.01≤z≤0.08，0.01≤y≤0.8。
The light-emitting device for plant illumination provided by the invention has the advantages that the blue light L ED chip and the red light L ED chip jointly excite the far-red light fluorescent layer to emit light, the excitation efficiency of the far-red light fluorescent layer can be improved, in the light-emitting device, the blue light L ED chip and the red light L ED chip are adopted to match and respond to the special far-red light fluorescent powder to realize the far-red light emission with the emission peak value positioned at 730nm, the preparation cost of the light-emitting device is obviously lower than that of the existing light-emitting device directly adopting the 730nm chip, the far-red light fluorescent powder suitable for jointly exciting the blue light and the red light has the characteristics of high stability and high external quantum efficiency, the photon photosynthetic flux and the stability of the whole light-emitting device are higher than those of the light-photosynthetic photon flux directly adopting the 730nm chip, and the 730nm emission intensity emitted by the light-emitting device is far higher than that of the far-red light fluorescent powder is excited by only using the blue light chip.
Drawings
Fig. 1 is a spectrum diagram of an excitation spectrum and an emission spectrum of a blue light and a red light co-excited in a light emitting device of the present invention;
FIG. 2 is a schematic diagram showing the positions of a substrate, a blue L ED chip, a red-phosphor layer, and a far-red-phosphor layer in a light-emitting device according to an embodiment of the present invention;
FIG. 3 is a schematic diagram showing the positions of a substrate, a blue L ED die, a red L ED die, and a far-red phosphor layer in a light-emitting device according to an embodiment of the invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Furthermore, the terms "first", "second", and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The embodiment of the invention provides a light-emitting device for plant illumination, which comprises a substrate, and a blue light L ED chip, a red phosphor layer and a far-red phosphor layer which are positioned on the substrate and sequentially arranged along a light-emitting direction, wherein the red phosphor layer contains red phosphor powder, and the far-red phosphor layer contains far-red phosphor powder;
the chemical general formula of the far-red fluorescent powder is as follows: a. the3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+) Wherein A is selected from at least one of L u and Y, A must contain L u, M is selected from at least one of Si, Zr and Hf, x is more than or equal to 0.001 and less than or equal to 0.05, z is more than or equal to 0.01 and less than or equal to 0.08, and Y is more than or equal to 0.01 and less than or equal to 0.8.
The light-emitting device for plant illumination provided by the embodiment of the invention has the advantages that the red phosphor layer is excited to emit light by the blue light L ED chip, then the blue light L ED chip and the excited red phosphor layer jointly excite the far-red phosphor layer to emit light, and the excitation efficiency of the far-red phosphor layer can be improved, in the light-emitting device, the blue light chip L ED is adopted to match and respond the red phosphor powder and the special far-red phosphor powder to realize the far-red light emission with the emission peak value being 730nm, so the preparation cost of the light-emitting device is obviously lower than that of the existing light-emitting device directly adopting the 730nm chip, the far-red phosphor powder adopted by the embodiment of the invention and jointly excited by the blue light and the red light has the characteristics of high stability and high external quantum efficiency, the photosynthetic photon flux and the stability of the whole light-emitting device are higher than those of the existing light-emitting device directly adopting the 730nm chip, and the 730nm emission intensity emitted by the light-emitting device is far higher than that the far-red phosphor powder is excited only by the blue light chip.
In the light emitting device of the embodiment of the present invention, the chemical general formula of the far-red phosphor is: a. the3-xMyGa5-y- zO12-yNy:(zCr3+,xCe3+) Wherein A is selected from at least one of L u and Y, A must contain L u, M is selected from at least one of Si, Zr and Hf, x is more than or equal to 0.001 and less than or equal to 0.05, z is more than or equal to 0.01 and less than or equal to 0.08, and Y is more than or equal to 0.01 and less than or equal to 0.83+And Cr3+The co-activation energy transfer form improves the Cr3+The luminous intensity of (a); due to Ce3+The emission spectrum is just concentrated at about 500-620nm, Ce3+Emission energy can be Cr3+Effective absorption and further Cr promotion3+The emission intensity. And simply A3-xGa5-zO12:(zCr3+,xCe3+) The emission wavelength of the fluorescent powder is relatively shorter (between 710 and 720 nm), in order to further regulate the emission wavelength of the fluorescent powder of the system to be about 730nm and meet the illumination wave band for plant growth, the invention adopts M-N to replace Ga-O bond, so that the emission wavelength of the fluorescent powder is further red-shifted to be about 730nm, based on Ce and L u, the ionic radius of Y is relatively similar (Ce replaces A site), and the fluorescent powder containing L u has excellent reliability, therefore, A in the far-red fluorescent powder of the embodiment of the invention is selected from at least one of L u and Y, and necessarily contains L u, and Cr is L u3+And Ga3+The ionic radii are relatively similar, and Cr replaces Ga position.
Preferably, A is L u, M is Si. first, L u3+And Ce3+The radii are closer, and more Ce can be promoted3+The fluorescent powder enters a luminescence center to improve the luminescence intensity of the fluorescent powder, the crystallinity and the stability of the garnet-structured fluorescent powder of L u system are better, the element A is preferably L u, when M is Si, the ionic radius of the element A is closest to that of Ga, and a proper amount of Si-N replaces Ga-O, so that the crystal structure integrity of the fluorescent powder is better, and the luminescence intensity is relatively higher.
More preferably, 0.005. ltoreq. x.ltoreq.0.03, 0.05. ltoreq. z.ltoreq.0.08, 0.5. ltoreq. y.ltoreq.0.7. Ce3+Too high doping concentration can absorb more blue light, Ce3+Significant emission, resulting in Cr3+Absorption is relatively low, and luminous intensity is reduced; if the doping concentration is too low, Ce3+-Cr3+The energy transfer effect is not obvious, and the luminous intensity is not obviously improved, so that x is preferably more than or equal to 0.005 and less than or equal to 0.03. Cr (chromium) component3+The concentration determines the emission peak wavelength and the emission intensity, the concentration is too low, Cr3+The emission wavelength is shorter and the emission intensity is lower; if the concentration is too high, Cr3+Non-radiative transitions occur between them, the luminescence intensity decreases, so 0.05. ltoreq. z.ltoreq.0.08 is preferred. The content range of Si-N substituted Ga-O also determines the emission peak wavelength and the luminous intensity of the fluorescent powder, if the y value is too low, the red shift of the peak wavelength of the fluorescent powder is not obvious, and if the y value is too high, the defects of the fluorescent powder are increased, the crystallinity is poor, and the luminous intensity is reduced, so that y is preferably more than or equal to 0.5 and less than or equal to 0.7.
In the embodiment of the invention, the far-red phosphor is preferably L u2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5The fluorescent powder can better realize the far-red light emission with the emission peak value at 730 nm.
Further, in the light emitting device according to the embodiment of the present invention, the red phosphor is at least one selected from the group consisting of a nitride red phosphor, a silicate red phosphor, and an aluminate red phosphor. Specifically, the nitride red phosphor includes Sr2Si5N8:Eu2+、Ca2Si5N8:Eu2+、(Sr,Ca)2Si5N8:Eu2+、(Ca,Sr)AlSiN3:Eu2+And SrAlSi4N7:Eu2 +At least one of; the aluminate red phosphor comprises Sr3Al2O6:Eu2+、Ca3Al2O6:Eu2+、(Sr,Ca)3Al2O6:Eu2+And Y2O3:Eu3+At least one of; the silicate red fluorescent powder comprises: DSiO5:Eu2+And (Ba, Ca) SiO4:Eu2 +,Mn2+At least one of; wherein D is at least one selected from Sr, Ba, Ca and Mg. The red phosphor has stronger absorption in the range of the blue light wavelength of 450-460nm, and can make the emission wavelength be at 600-610 nm.
In the light-emitting device of the embodiment of the invention, the wavelength of the blue light L ED chip is 450-plus 460nm, the peak wavelength of the red fluorescent powder is 600-plus 610nm, and the peak wavelength of the far-red fluorescent powder is 710-plus 730nm, and the corresponding wavelengths of the blue light L ED chip, the red fluorescent powder and the far-red fluorescent powder are adopted to realize the advantage of 730nm emission intensity, namely, the red fluorescent powder with the peak wavelength of 600-plus 610nm is excited to emit light by the wavelength of 450-plus 460nm of the blue light L ED chip, and the two are combined to form an excitation spectrum which can enable the far-red fluorescent powder to emit light, so that the far-red light with the wavelength of 730nm is finally obtained after the far-red fluorescent powder is excited together.
Further, in the light emitting device of the embodiment of the invention, the ratio of the luminous intensity of the blue light L ED chip to the luminous intensity of the red phosphor excited by the blue light L ED chip is (1.5-2): 1. in the above ratio range, the emission of the far-red light at 730nm can be better realized, the peak wavelength and the luminous intensity ratio of the combination of the blue light and the red light obtained in the above ratio range are similar to the excitation spectrum of the far-red phosphor, as shown in FIG. 1, so that the excitation efficiency of the far-red phosphor can be improved.
Further, in the light emitting device of the embodiment of the present invention, the blue light L ED chip, the red phosphor layer, and the far-red phosphor layer are sequentially stacked.
Further, in the light emitting device according to the embodiment of the present invention, the red phosphor layer is composed of 30% to 90% by weight of red phosphor and 10% to 70% by weight of first encapsulation glue, based on 100% by weight of the total red phosphor layer, and preferably, 40% by weight of red phosphor. Furthermore, the far-red phosphor layer is composed of the far-red phosphor powder and a second packaging adhesive, and the far-red phosphor powder accounts for 30-90 wt% of the total weight of the far-red phosphor layer, the second packaging adhesive accounts for 10-70 wt% of the total weight of the far-red phosphor layer, and preferably the far-red phosphor powder accounts for 80 wt%. In the embodiment of the invention, the weight of the red fluorescent powder (or far-red fluorescent powder) and the packaging adhesive determines the packaging effect, if the concentration of the red fluorescent powder (or far-red fluorescent powder) is too high, the adhesive is dispensed to form a concave cup and the dispersion is not uniform, which is not favorable for packaging luminous intensity and luminous uniformity; if the concentration of the red light fluorescent powder (or far-red light fluorescent powder) is too low, a convex cup can be formed by dispensing, and the packaging emission intensity is reduced. Therefore, the packaging effect is best in the proportion range of 30% -90%.
On the other hand, the embodiment of the invention also provides a light-emitting device for plant illumination, which comprises a substrate, and chips and a far-red phosphor layer which are positioned on the substrate and are sequentially arranged along the light-emitting direction, wherein the chips comprise a blue light L ED chip and a red light L ED chip, and the far-red phosphor layer contains far-red phosphor;
the chemical general formula of the far-red fluorescent powder is as follows: a. the3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+) Wherein A is selected from at least one of L u and Y, A must contain L u, M is selected from at least one of Si, Zr and Hf, x is more than or equal to 0.001 and less than or equal to 0.05, z is more than or equal to 0.01 and less than or equal to 0.08, and Y is more than or equal to 0.01 and less than or equal to 0.8.
The light-emitting device for plant illumination provided by the embodiment of the invention has the advantages that the blue light L ED chip and the red light L ED chip jointly excite the far-red phosphor layer to emit light, the excitation efficiency of the far-red phosphor layer can be improved, in the light-emitting device, the blue light L ED chip and the red light L ED chip are adopted to match and respond to the special far-red phosphor powder to realize the far-red light emission with the emission peak value positioned at 730nm, the preparation cost of the light-emitting device is obviously lower than that of the existing light-emitting device directly adopting the 730nm chip, the far-red phosphor powder suitable for jointly exciting the blue light and the red light has the characteristics of high stability and high external quantum efficiency, the photosynthetic photon flux and the stability of the whole light-emitting device are higher than those of the light-emitting device directly adopting the 730nm chip, and the 730nm emission intensity emitted by the light-emitting device is far higher than that of the blue light chip is used for exciting the far-red phosphor powder.
In the light-emitting device, the chemical general formula of the far-red fluorescent powder is as follows: a. the3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+) Wherein A is selected from at least one of L u and Y, A must contain L u, M is selected from at least one of Si, Zr and Hf, x is more than or equal to 0.001 and less than or equal to 0.05, z is more than or equal to 0.01 and less than or equal to 0.08, and Y is more than or equal to 0.01 and less than or equal to 0.8.
Specifically, the selection principle, preferred embodiment and content of the far-red phosphor in the far-red phosphor layer have been described in detail above, and will not be described here.
Furthermore, in the light emitting device, the peak wavelength of the far-red light fluorescent powder is 710-730nm, the wavelength of the red light L ED chip is 600-610nm, the wavelength of the blue light L ED chip is 450-460nm, and the wavelength of the far-red light fluorescent powder is jointly excited by the wavelengths corresponding to the blue light L ED chip and the red light L ED chip, so that the advantage of the emission intensity of 730nm is realized.
Furthermore, in the light emitting device, the blue light L ED chip and the red light L ED chip are connected in parallel or in series, the forward voltage difference between the blue light L ED chip and the red light L ED chip is +/-0.1V (namely-0.1V to +0.1V), the current difference between the blue light L ED chip and the red light L ED chip is +/-10 mA (namely-10 mA to +10mA), if the voltage difference and the current difference are large, the current impact resistance stability of the light emitting device is poor, so that the attenuation is too large, the light uniformity is poor, and therefore, the current impact resistance stability of the light emitting device with the voltage difference and the current difference within the ranges is optimal.
The ratio of the luminous intensity of the blue light L ED chip to the luminous intensity of the red light L ED chip is (1.5-2): 1. the ratio of the peak wavelength and the luminous intensity of the combination of the blue light and the red light obtained in the ratio range is similar to the excitation spectrum of the far-red fluorescent powder, as shown in figure 1, so that the excitation efficiency of the far-red fluorescent powder can be improved.
The invention is described in further detail with reference to a part of the test results, which are described in detail below with reference to specific examples.
Example 1
As shown in fig. 2, the semiconductor light-emitting device for plant illumination comprises a substrate, and a blue light L ED chip, a red phosphor layer and a far-red phosphor layer which are positioned on the substrate and are sequentially stacked along a light-emitting direction, wherein the red phosphor layer contains red phosphor powder, and the far-red phosphor layer contains far-red phosphor powder;
the blue light L ED chip emits 450nm blue light, the red phosphor is selected from nitride red phosphor, the ratio of the luminous intensity of the blue light L ED chip to the luminous intensity of the red phosphor excited by the blue light L ED chip is 1.5: 1, and the far-red phosphor consists of L u2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5. The mixture of the nitride red fluorescent powder and the silica gel is coated on the surface of the chip to form a red fluorescent layer, and the nitride red fluorescent powder accounts for 40% of the total mass of the silica gel and the fluorescent powder; the far-red fluorescent powder and the silica gel are mixed and then placed on the red fluorescent layer, and the far-red fluorescent powder accounts for 80% of the total mass of the silica gel and the fluorescent powder.
Example 2
As shown in fig. 2, the semiconductor light-emitting device for plant illumination comprises a substrate, and a blue light L ED chip, a red phosphor layer and a far-red phosphor layer which are positioned on the substrate and are sequentially stacked along a light-emitting direction, wherein the red phosphor layer contains red phosphor powder, and the far-red phosphor layer contains far-red phosphor powder;
the blue light L ED chip emits 450nm blue light, the red phosphor is selected from nitride red phosphor, the ratio of the luminous intensity of the blue light L ED chip to the luminous intensity of the red phosphor excited by the blue light L ED chip is 2: 1, and the far-red phosphor consists of L u2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5. The mixture of the nitride red fluorescent powder and the silica gel is coated on the surface of the chip to form a red fluorescent layer, and the nitride red fluorescent powder accounts for 40% of the total mass of the silica gel and the fluorescent powder; the far-red fluorescent powder and the silica gel are mixed and then placed on the red fluorescent layer, and the far-red fluorescent powder accounts for 80% of the total mass of the silica gel and the fluorescent powder.
Example 3
A light-emitting device for plant illumination is shown in figure 3 and comprises a substrate, and chips and a far-red powder fluorescent layer which are positioned on the substrate and are sequentially arranged along a light-emitting direction, wherein the chips comprise a blue light L ED chip and a red light L ED chip which are mutually connected in series, and the far-red powder fluorescent layer contains far-red fluorescent powder;
the blue light L ED chip emits blue light with the wavelength of 450nm, the red light L ED chip emits red light with the wavelength of 600nm, the forward voltage difference between the blue light L ED chip and the red light L ED chip is 0.1V, the current difference between the blue light L ED chip and the red light L ED chip is 10mA, the luminous intensity ratio between the blue light L ED chip and the red light L ED chip is 1.5: 1, and the far-red fluorescent powder consists of L u2.99Ce0.01Si0.5Ga4.45Cr0.0 5O11.5N0.5The far-red fluorescent powder and the silica gel are mixed and then placed on a blue light L ED chip and a red light L ED chip, and the far-red fluorescent powder accounts for 80% of the total mass of the silica gel and the fluorescent powder.
Example 4
A light-emitting device for plant illumination is shown in figure 3 and comprises a substrate, and chips and a far-red powder fluorescent layer which are positioned on the substrate and are sequentially arranged along a light-emitting direction, wherein the chips comprise a blue light L ED chip and a red light L ED chip which are mutually connected in series, and the far-red powder fluorescent layer contains far-red fluorescent powder;
the blue light L ED chip emits blue light with the wavelength of 450nm, the red light L ED chip emits red light with the wavelength of 610nm, the forward voltage difference between the blue light L ED chip and the red light L ED chip is-0.1V, the current difference between the blue light L ED chip and the red light L ED chip is-10 mA, the luminous intensity ratio between the blue light L ED chip and the red light L ED chip is 2: 1, and the far-red fluorescent powder consists of L u2.99Ce0.01Si0.5Ga4.45Cr0.0 5O11.5N0.5The far-red fluorescent powder and the silica gel are mixed and then placed on a blue light L ED chip and a red light L ED chip, and the far-red fluorescent powder accounts for 80% of the total mass of the silica gel and the fluorescent powder.
Comparative example 1
A semiconductor light emitting device for plant illumination directly emits light with L ED infrared chip of 730 nm.
The emission intensity variation of the light emitting devices in examples 1 to 4 and comparative example 1 described above in the vicinity of 730nm is shown in table 1.
TABLE 1
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The light-emitting device for plant illumination is characterized by comprising a substrate, and a blue light L ED chip, a red powder fluorescent layer and a far-red powder fluorescent layer which are positioned on the substrate and sequentially arranged along a light-emitting direction, wherein the red powder fluorescent layer contains red fluorescent powder, and the far-red powder fluorescent layer contains far-red fluorescent powder;
the chemical general formula of the far-red fluorescent powder is as follows: a. the3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+) Wherein A is selected from at least one of L u and Y, A must contain L u, M is selected from at least one of Si, Zr and Hf, x is more than or equal to 0.001 and less than or equal to 0.05, z is more than or equal to 0.01 and less than or equal to 0.08, and Y is more than or equal to 0.01 and less than or equal to 0.8;
wherein the peak wavelength of the far-red fluorescent powder is 710-730 nm.
2. The light-emitting device according to claim 1, wherein the far-red phosphor has a chemical formula in which A is L u, M is Si, and 0.005. ltoreq. x.ltoreq.0.03, 0.05. ltoreq. z.ltoreq.0.08, and 0.5. ltoreq. y.ltoreq.0.7.
3. The light-emitting device according to claim 1, wherein the peak wavelength of the red phosphor is 600-610 nm; and/or the presence of a gas in the gas,
the wavelength of the blue light L ED chip is 450-460 nm.
4. The light-emitting device according to claim 1, wherein the ratio of the emission intensity of the blue L ED chip to the emission intensity of the red phosphor excited by the blue L ED chip is (1.5-2): 1.
5. The light-emitting device according to claim 1, wherein the red phosphor is at least one selected from the group consisting of a nitride red phosphor, a silicate red phosphor, and an aluminate red phosphor.
6. The light-emitting device according to claim 5, wherein the nitride red phosphor comprises Sr2Si5N8:Eu2 +、Ca2Si5N8:Eu2+、(Sr,Ca)2Si5N8:Eu2+、(Ca,Sr)AlSiN3:Eu2+And SrAlSi4N7:Eu2+At least one of; and/or the presence of a gas in the gas,
the aluminate red phosphor comprises Sr3Al2O6:Eu2+、Ca3Al2O6:Eu2+、(Sr,Ca)3Al2O6:Eu2+And Y2O3:Eu3+At least one of; and/or the presence of a gas in the gas,
the silicate red fluorescent powder comprises: DSiO5:Eu2+And (Ba, Ca) SiO4:Eu2+,Mn2+At least one of; wherein D is at least one selected from Sr, Ba, Ca and Mg.
7. A light-emitting device for plant illumination is characterized by comprising a substrate, and a chip and a far-red powder fluorescent layer which are positioned on the substrate and sequentially arranged along a light-emitting direction, wherein the chip comprises a blue light L ED chip and a red light L ED chip, and the far-red powder fluorescent layer contains far-red fluorescent powder;
the chemical general formula of the far-red fluorescent powder is as follows: a. the3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+) Wherein A is selected from at least one of L u and Y, A must contain L u, M is selected from at least one of Si, Zr and Hf, x is more than or equal to 0.001 and less than or equal to 0.05, z is more than or equal to 0.01 and less than or equal to 0.08, and Y is more than or equal to 0.01 and less than or equal to 0.8;
wherein the peak wavelength of the far-red fluorescent powder is 710-730 nm.
8. The light-emitting device according to claim 7, wherein the far-red phosphor has a chemical formula in which A is L u, M is Si, and 0.005. ltoreq. x.ltoreq.0.03, 0.05. ltoreq. z.ltoreq.0.08, and 0.5. ltoreq. y.ltoreq.0.7.
9. The light-emitting device according to claim 7, wherein the wavelength of the red L ED chip is 600nm and 610nm, and/or,
the wavelength of the blue light L ED chip is 450-460 nm.
10. The light emitting device according to claim 7, wherein the blue L ED chip and the red L ED chip are connected in parallel or in series, and/or,
the forward voltage difference between the blue light L ED chip and the red light L ED chip is +/-0.1V, and/or,
the current difference between the blue L ED chip and the red L ED chip is +/-10 mA, and/or,
the ratio of the luminous intensity of the blue light L ED chip to the luminous intensity of the red light L ED chip is (1.5-2): 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910022825.6A CN109817791B (en) | 2019-01-10 | 2019-01-10 | Light emitting device for plant illumination |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910022825.6A CN109817791B (en) | 2019-01-10 | 2019-01-10 | Light emitting device for plant illumination |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109817791A CN109817791A (en) | 2019-05-28 |
| CN109817791B true CN109817791B (en) | 2020-07-10 |
Family
ID=66603244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910022825.6A Active CN109817791B (en) | 2019-01-10 | 2019-01-10 | Light emitting device for plant illumination |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109817791B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112186087B (en) * | 2020-08-28 | 2021-09-28 | 合肥工业大学 | Far-red light-near infrared light LED device preparation method and LED device |
| CN113355095B (en) * | 2021-03-03 | 2023-06-16 | 华南农业大学 | Near infrared fluorescent powder, preparation method thereof and light-emitting device for supplementing light to dragon fruits |
| CN115799433A (en) * | 2023-01-09 | 2023-03-14 | 四川世纪和光科技发展有限公司 | Red light packaging structure, red light LED light source and packaging method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101195744A (en) * | 2006-08-15 | 2008-06-11 | 大连路明科技集团有限公司 | Nitrogen-containing compound luminescent material, manufacturing method and illuminating device used thereof |
| US8395312B2 (en) * | 2010-04-19 | 2013-03-12 | Bridgelux, Inc. | Phosphor converted light source having an additional LED to provide long wavelength light |
| CN105405954A (en) * | 2015-10-23 | 2016-03-16 | 电子科技大学 | LED lamp used for plant illumination |
| CN108467733B (en) * | 2018-04-08 | 2021-07-09 | 有研稀土新材料股份有限公司 | Near-infrared fluorescent powder, preparation method thereof and light-emitting device containing fluorescent powder |
| CN109192843B (en) * | 2018-07-10 | 2019-08-13 | 旭宇光电（深圳）股份有限公司 | Plant growth light emitting diode |
-
2019
- 2019-01-10 CN CN201910022825.6A patent/CN109817791B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109817791A (en) | 2019-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108305929B (en) | White light emitting device with high color rendering | |
| CN108630794B (en) | White light emitting device | |
| CN1860205B (en) | Fluorescent substance, method of manufacturing fluorescent substance, and light emitting device using the fluorescent substance | |
| CN109817791B (en) | Light emitting device for plant illumination | |
| US8012372B2 (en) | Borate phosphor and white light illumination device utilizing the same | |
| CN103311413B (en) | White light emitting device | |
| CN109192843B (en) | Plant growth light emitting diode | |
| CN107557008B (en) | Fluorescent powder, preparation method thereof and light-emitting device with fluorescent powder | |
| JP4151284B2 (en) | Nitride semiconductor light-emitting element, light-emitting device, and manufacturing method thereof | |
| KR102181291B1 (en) | Lutetium nitride-based fluorescent powder and light emitting device having the same | |
| CN101724401A (en) | Red luminous silicon-oxygen nitride fluorescent material, preparation method and light emitting device using same | |
| CN109768144B (en) | Light emitting device for plant illumination | |
| US11005010B2 (en) | Phosphor and method of manufacturing same, and LED lamp | |
| CN110676363B (en) | Optical device | |
| CN116751585A (en) | Fluorescent powder composition and LED device | |
| CN106634997A (en) | Composite phosphate fluorophor and application thereof | |
| CN111442198B (en) | Full-spectrum light emitting system | |
| TW201107917A (en) | A modulating method for CCT and a LED light module with variable CCT | |
| CN114574206B (en) | Fluorescent powder for white light-emitting diode and synthesis method and application thereof | |
| CN101348719B (en) | Warm white LED and halogenide fluorescent powder thereof | |
| JP7212703B2 (en) | optical device | |
| CN111223979B (en) | Light-emitting device and lamp for health lighting | |
| CN112310263B (en) | Full-spectrum LED light source | |
| TWI419956B (en) | Flourescence material and white light illumination element | |
| KR101047775B1 (en) | Phosphor and Light Emitting Device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |