CN109817791A - The light emitting device of plant illumination - Google Patents
The light emitting device of plant illumination Download PDFInfo
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- CN109817791A CN109817791A CN201910022825.6A CN201910022825A CN109817791A CN 109817791 A CN109817791 A CN 109817791A CN 201910022825 A CN201910022825 A CN 201910022825A CN 109817791 A CN109817791 A CN 109817791A
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- 238000005286 illumination Methods 0.000 title claims abstract description 32
- 239000000843 powder Substances 0.000 claims abstract description 185
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000011248 coating agent Substances 0.000 claims abstract description 49
- 238000000576 coating method Methods 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 9
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 9
- 230000005284 excitation Effects 0.000 claims description 12
- 150000004767 nitrides Chemical group 0.000 claims description 10
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 4
- 150000004645 aluminates Chemical class 0.000 claims description 4
- 239000005084 Strontium aluminate Substances 0.000 claims description 2
- 229910052909 inorganic silicate Inorganic materials 0.000 claims description 2
- 241000196324 Embryophyta Species 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000000741 silica gel Substances 0.000 description 11
- 229910002027 silica gel Inorganic materials 0.000 description 11
- 230000004907 flux Effects 0.000 description 8
- 230000000243 photosynthetic effect Effects 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000003760 hair shine Effects 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 208000033748 Device issues Diseases 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 241001062009 Indigofera Species 0.000 description 3
- 241001025261 Neoraja caerulea Species 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000695 excitation spectrum Methods 0.000 description 3
- 230000008635 plant growth Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910007991 Si-N Inorganic materials 0.000 description 2
- 229910006294 Si—N Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008121 plant development Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 241001465382 Physalis alkekengi Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000006690 co-activation Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002284 excitation--emission spectrum Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000012055 fruits and vegetables Nutrition 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention belongs to lighting technical fields, and in particular to a kind of light emitting device of plant illumination.A kind of light emitting device of plant illumination, blue-light LED chip, rouge and powder fluorescence coating and the remote rouge and powder fluorescence coating set gradually including substrate and in the substrate and along light emission direction, the rouge and powder fluorescence coating contains red fluorescence powder, contains far-red light fluorescent powder in the remote rouge and powder fluorescence coating；The chemical general formula of the far-red light fluorescent powder are as follows: A3‑xMyGa5‑y‑zO12‑yNy:(zCr3+,xCe3+)；Wherein, A is selected from least one of Lu and Y, and A must contain Lu, and M is selected from least one of Si, Zr and Hf；0.001≤x≤0.05,0.01≤z≤0.08,0.01≤y≤0.8.Light emitting device of the invention has very extensive application prospect in plant illumination.
Description
Technical field
The invention belongs to lighting technical fields, and in particular to a kind of light emitting device of plant illumination.
Background technique
Luminous environment is one of indispensable important physical environmental factors of plant growth and development, is adjusted by light quality, control
Each stage of plant growth and development is an important technology.Therefore, plant illumination technology has been widely used agricultural at present
The items crops such as production, fruits and vegetables plantation, flower cultivating field.Although plant illumination application scale is wide like that not as good as general illumination
It is general, but in view of itself superiority and particularity, the approval in market is also gradually obtained, the market demand increasingly increases.
450nm, 660nm and 730nm or so lamp bead are widely used at present and mixes for plant illumination lamps and lanterns, but preparation cost
Very expensive, especially 730nm chip price is 10 times -20 times of 450nm chip., and it is limited by chip ingredient and technology shadow
It rings, 730nm chip photo-quantum efficiency room for promotion is limited.Therefore, the prior art has much room for improvement.
Summary of the invention
The purpose of the present invention is to provide a kind of light emitting devices of plant illumination, it is intended to solve existing plant illumination hair
The technical problem at high cost of electro-optical device.
For achieving the above object, The technical solution adopted by the invention is as follows:
On the one hand, the present invention provides a kind of light emitting device of plant illumination, including substrate and be located in the substrate and
Blue-light LED chip, rouge and powder fluorescence coating and the remote rouge and powder fluorescence coating set gradually along light emission direction, the rouge and powder fluorescence coating contains red
Color fluorescent powder contains far-red light fluorescent powder in the remote rouge and powder fluorescence coating；
The chemical general formula of the far-red light fluorescent powder are as follows: A3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+)；Wherein, A is selected from
At least one of Lu and Y, and A must contain Lu, M is selected from least one of Si, Zr and Hf；0.001≤x≤0.05,0.01≤z
≤ 0.08,0.01≤y≤0.8.
The light emitting device of plant illumination provided by the invention excites rouge and powder fluorescent layer emitting light by blue-light LED chip, so
Blue-light LED chip excites remote rouge and powder fluorescent layer emitting light with the rouge and powder fluorescence coating after excitation jointly afterwards, can promote remote rouge and powder fluorescence
The launching efficiency of layer；In the light emitting device, response red fluorescence powder is matched using blue chip LED and distinctive far-red light is glimmering
Light powder realizes that its emission peak is located at the far-red light of 730nm and shines, and such light emitting device is on preparation cost significantly lower than existing
There is the light emitting device for directlying adopt 730nm chip；And the present invention is glimmering using the far-red light for being suitble to blue light and feux rouges to excite jointly
Light powder has the characteristics that stability is high, external quantum efficiency is high, and the photosynthetic photon flux and stability of entire light emitting device are higher than
The photosynthetic photon flux of 730nm chip is directlyed adopt, and the 730nm emissive porwer that the light emitting device issues is much higher than only with blue
The emissive porwer of optical chip excitation far-red light fluorescent powder.Therefore, light emitting device of the invention has very wide in plant illumination
General application prospect.
On the other hand, the present invention also provides a kind of light emitting device of plant illumination, including substrate and it is located at the substrate
Chip and remote rouge and powder fluorescence coating upper and set gradually along light emission direction；The chip includes blue-light LED chip and red-light LED core
Piece contains far-red light fluorescent powder in the remote rouge and powder fluorescence coating；
The chemical general formula of the far-red light fluorescent powder are as follows: A3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+)；Wherein, A is selected from
At least one of Lu and Y, and A must contain Lu, M is selected from least one of Si, Zr and Hf；0.001≤x≤0.05,0.01≤z
≤ 0.08,0.01≤y≤0.8.
The light emitting device of plant illumination provided by the invention is excited jointly by blue-light LED chip and red LED chip
Remote rouge and powder fluorescent layer emitting light, can promote the launching efficiency of remote rouge and powder fluorescence coating；In the light emitting device, using blue chip
LED and red LED chip matching respond distinctive far-red light fluorescent powder and realize that its emission peak is located at the far-red light hair of 730nm
Light, such light emitting device are significantly lower than the existing light emitting device for directlying adopt 730nm chip on preparation cost；And this hair
It is bright to have the characteristics that stability is high, external quantum efficiency is high using the far-red light fluorescent powder for being suitble to blue light and feux rouges to excite jointly, it is whole
The photosynthetic photon flux and stability of a light emitting device are higher than the photosynthetic photon flux for directlying adopt 730nm chip, and should
The 730nm emissive porwer that light emitting device issues is much higher than only with the emissive porwer of blue chip excitation far-red light fluorescent powder.Therefore,
Light emitting device of the invention has very extensive application prospect in plant illumination.
Detailed description of the invention
Fig. 1 is the wave spectrum of blue light and feux rouges excite jointly in light emitting device of the invention excitation spectrum and emission spectrum
Figure；
Fig. 2 is that substrate, blue-light LED chip, rouge and powder fluorescence coating and remote rouge and powder are glimmering in the light emitting device of one embodiment of the invention
The position view of photosphere；
Fig. 3 is that substrate, blue-light LED chip, red LED chip and remote rouge and powder are glimmering in the light emitting device of one embodiment of the invention
The position view of photosphere.
Specific embodiment
In order to which technical problems, technical solutions and advantageous effects to be solved by the present invention are more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain
The present invention is not intended to limit the present invention.
In addition, term " first ", " second ", being used for description purposes only, it is not understood to indicate or imply relatively important
Property or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Person implicitly includes one or more of the features.In the description of the present invention, the meaning of " plurality " is two or two with
On, unless otherwise specifically defined.
The embodiment of the invention provides a kind of light emitting devices of plant illumination, as shown in Fig. 2, including substrate and being located at institute
It states in substrate and blue-light LED chip, rouge and powder fluorescence coating and remote rouge and powder fluorescence coating, the rouge and powder set gradually along light emission direction is glimmering
Photosphere contains red fluorescence powder, contains far-red light fluorescent powder in the remote rouge and powder fluorescence coating；
The chemical general formula of the far-red light fluorescent powder are as follows: A3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+)；Wherein, A is selected from
At least one of Lu and Y, and A must contain Lu, M is selected from least one of Si, Zr and Hf；0.001≤x≤0.05,0.01≤z
≤ 0.08,0.01≤y≤0.8.
The light emitting device of plant illumination provided in an embodiment of the present invention excites rouge and powder fluorescence coating by blue-light LED chip
It shines, then blue-light LED chip excites remote rouge and powder fluorescent layer emitting light with the rouge and powder fluorescence coating after excitation jointly, can be promoted remote red
The launching efficiency of powder fluorescence coating；In the light emitting device, response red fluorescence powder and distinctive remote is matched using blue chip LED
Red light fluorescent powder realizes that its emission peak is located at the far-red light of 730nm and shines, and such light emitting device is obvious on preparation cost
Lower than the existing light emitting device for directlying adopt 730nm chip；And the embodiment of the present invention is swashed jointly using suitable blue light and feux rouges
The far-red light fluorescent powder of hair has the characteristics that stability is high, external quantum efficiency is high, the photosynthetic photon flux of entire light emitting device and
Stability is higher than the photosynthetic photon flux for directlying adopt 730nm chip, and the 730nm emissive porwer that the light emitting device issues
Much higher than only with the emissive porwer of blue chip excitation far-red light fluorescent powder.Therefore, the light emitting device of the embodiment of the present invention is being planted
There is very extensive application prospect in object illumination.
In the light emitting device of the embodiment of the present invention, the chemical general formula of the far-red light fluorescent powder are as follows: A3-xMyGa5-y- zO12-yNy:(zCr3+,xCe3+)；Wherein, A is selected from least one of Lu and Y, and A must contain Lu, and M is in Si, Zr and Hf
It is at least one；0.001≤x≤0.05,0.01≤z≤0.08,0.01≤y≤0.8.The embodiment of the present invention is by using Ce3+With
Cr3+Co-activation energy transmission form improves Cr3+Luminous intensity；Due to Ce3+Emission spectrum just concentrates on 500-620nm
Left and right, Ce3+Emitted energy can be by Cr3+It effectively absorbs and then promotes Cr3+Emissive porwer.And simple A3-xGa5-zO12:(zCr3+,
xCe3+) launch wavelength it is relatively short (between 710-720nm), in order to which further the launch wavelength of the system fluorescent powder is regulated and controled
To 730nm or so, meet plant growth illumination wave band, the present invention substitutes Ga-O key using M-N, make the launch wavelength of fluorescent powder into
One step red shift is to 730nm or so.Based on Ce and Lu, Y-ion radius is more similar (Ce substitutes A), and fluorescent powder containing Lu has
Excellent reliability, therefore the A in far-red light fluorescent powder of the embodiment of the present invention is selected from least one of Lu and Y, and must contain Lu.
And Cr3+And Ga3+Ionic radius is more similar, and Cr substitutes the position Ga.
Preferably, A Lu, M Si.Firstly, Lu3+And Ce3+Radius is more closely, can promote more Ce3+Into hair
Light center promotes light-emitting phosphor intensity, and the crystallinity of Lu system garnet structure fluorescent powder and stability are preferable, the present invention
It is preferred that element A is Lu.When M is Si, ionic radius and Ga are closest, the substitution Ga-O of appropriate Si-N, crystal structure
Integrality is preferable, and luminous intensity is relatively high.
It is highly preferred that 0.005≤x≤0.03,0.05≤z≤0.08,0.5≤y≤0.7.Ce3+The excessively high meeting pair of doping concentration
Blue light absorption is more, Ce3+Transmitting is obvious, causes Cr3+Absorb relatively fewer, luminous intensity reduction；If doping concentration is too low
Words, Ce3+-Cr3+Energy transmission effect is unobvious, and luminous intensity promotion is unobvious, therefore preferably 0.005≤x≤0.03.Cr3+
Concentration determines this its emission peak wavelength and emissive porwer, and concentration is too low, Cr3+Launch wavelength is shorter and emissive porwer is lower；If
Concentration is excessive, Cr3+Between occur radiationless transition, luminous intensity reduces, and it is therefore preferred to 0.05≤z≤0.08.Si-N replaces
Ga-O content range equally decides the emission peak wavelength and luminous intensity of fluorescent powder, if y value is too low, fluorescent powder peak wavelength
Red shift is unobvious, if y value is excessively high, fluorescent powder defect increases, crystallinity deterioration, and luminous intensity reduces, therefore y is preferably 0.5≤y
≤0.7。
In the embodiment of the present invention, far-red light fluorescent powder is preferably Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5Fluorescent powder,
With the fluorescent powder can be better achieved emission peak be located at 730nm far-red light shine.
Further, in the light emitting device of the embodiment of the present invention, the red fluorescence powder is selected from nitride red fluorescence
At least one of powder, silicate red fluorescent powder and aluminate red fluorescent powder.Specifically, the nitride red fluorescent powder
Including Sr2Si5N8:Eu2+、Ca2Si5N8:Eu2+、(Sr,Ca)2Si5N8:Eu2+、(Ca,Sr)AlSiN3:Eu2+And SrAlSi4N7:Eu2 +At least one of；The aluminate red fluorescent powder includes Sr3Al2O6:Eu2+、Ca3Al2O6:Eu2+、(Sr,Ca)3Al2O6:
Eu2+And Y2O3:Eu3+At least one of；The silicate red fluorescent powder includes: DSiO5:Eu2+(Ba, Ca) SiO4:Eu2 +,Mn2+At least one of；Wherein, D is selected from least one of Sr, Ba, Ca and Mg.Above-mentioned red fluorescence powder is in blue light wavelength
The section 450-460nm has stronger absorption, and launch wavelength can be made to be located at 600-610nm.
In the light emitting device of the embodiment of the present invention, the wavelength of the blue-light LED chip is 450-460nm, the red
The peak wavelength of fluorescent powder is 600-610nm, and the peak wavelength of the far-red light fluorescent powder is 710-730nm；Using above-mentioned indigo plant
The advantage of the corresponding wavelength of light LED chip and red fluorescence powder and far-red light fluorescent powder realization 730nm emissive porwer.Pass through indigo plant
The red light emitting phosphor that the wavelength 450-460nm excitation peak wavelength of light LED chip is 600-610nm, the two combination are formed
It can make the excitation map of far-red light light-emitting phosphor, in this way, finally obtaining after excitation far-red light fluorescent powder positioned at 730nm jointly
Far-red light shine.
Further, in the light emitting device of the embodiment of the present invention, the luminous intensity of the blue-light LED chip with it is described
The luminous strength ratio of the red fluorescence powder of blue-light LED chip excitation is (1.5-2): 1.It, can be more preferable within the scope of aforementioned proportion
Realize that the far-red light of 730nm shines in ground.The peak wavelength and strong light of blue light and the feux rouges combination obtained within the scope of aforementioned proportion
Degree ratio is similar with the excitation spectrum of far-red light fluorescent powder, as shown in Figure 1, being able to ascend the excitation effect of far-red light fluorescent powder in this way
Rate.
Further, in the light emitting device of the embodiment of the present invention, the blue-light LED chip, rouge and powder fluorescence coating and remote red
Powder fluorescence coating is cascading.
Further, in the light emitting device of the embodiment of the present invention, the rouge and powder fluorescence coating is by red light fluorescent powder and first
Packaging plastic composition, and be in terms of 100% by the total weight of the rouge and powder fluorescence coating, the weight percent of the red light fluorescent powder is
30%-90%, the weight percent of first packaging plastic are 10%-70%, it is preferable that the weight percent of red light fluorescent powder
It is 40%.Further, the remote rouge and powder fluorescence coating is made of the far-red light fluorescent powder and the second packaging plastic, and with described
The total weight of remote rouge and powder fluorescence coating is 100% meter, and the weight percent of the far-red light fluorescent powder is 30%-90%, described the
The weight percent of two packaging plastics is 10%-70%, it is preferable that the weight percent of the far-red light fluorescent powder is 80%.This
In inventive embodiments, the weight of red light fluorescent powder (or far-red light fluorescent powder) and packaging plastic decides its packaging effect, if feux rouges
Fluorescent powder (or far-red light fluorescent powder) excessive concentration, dispensing forms recessed cup and dispersion is uneven, be unfavorable for encapsulating light emitting intensity and
Uniformity of luminance；If red light fluorescent powder (or far-red light fluorescent powder) concentration is too low, dispensing will form convex cup, encapsulate emissive porwer
It reduces.Therefore, packaging effect is best in the proportional region of 30%-90%.
On the other hand, the embodiment of the present invention also provides a kind of light emitting device of plant illumination, as shown in figure 3, including base
Plate and the chip and remote rouge and powder fluorescence coating set gradually in the substrate and along light emission direction；The chip includes blue light
LED chip and red LED chip contain far-red light fluorescent powder in the remote rouge and powder fluorescence coating；
The chemical general formula of the far-red light fluorescent powder are as follows: A3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+)；Wherein, A is selected from
At least one of Lu and Y, and A must contain Lu, M is selected from least one of Si, Zr and Hf；0.001≤x≤0.05,0.01≤z
≤ 0.08,0.01≤y≤0.8.
The light emitting device of plant illumination provided in an embodiment of the present invention, it is total by blue-light LED chip and red LED chip
With remote rouge and powder fluorescent layer emitting light is excited, the launching efficiency of remote rouge and powder fluorescence coating can be promoted；In the light emitting device, using blue light
Chip LED and red LED chip matching respond distinctive far-red light fluorescent powder and realize that its emission peak is located at the far-red light of 730nm
It shines, such light emitting device is significantly lower than the existing light emitting device for directlying adopt 730nm chip on preparation cost；And this
Invention has the characteristics that stability is high, external quantum efficiency is high using the far-red light fluorescent powder for being suitble to blue light and feux rouges to excite jointly,
The photosynthetic photon flux and stability of entire light emitting device are higher than the photosynthetic photon flux for directlying adopt 730nm chip, and
The 730nm emissive porwer that the light emitting device issues is much higher than only with the emissive porwer of blue chip excitation far-red light fluorescent powder.Cause
This, the light emitting device of the embodiment of the present invention has very extensive application prospect in plant illumination.
In the light emitting device, the chemical general formula of the far-red light fluorescent powder are as follows: A3-xMyGa5-y-zO12-yNy:(zCr3+,
xCe3+)；Wherein, A is selected from least one of Lu and Y, and A must contain Lu, and M is selected from least one of Si, Zr and Hf；0.001
≤ x≤0.05,0.01≤z≤0.08,0.01≤y≤0.8.
Specifically, contain for the choosing principles of the far-red light fluorescent powder, preferred embodiment and in remote rouge and powder fluorescence coating
Amount, has elaborated above, has no longer illustrated here.
Further, in above-mentioned light emitting device, the peak wavelength of the far-red light fluorescent powder is 710-730nm；It is described red
The wavelength of light LED chip is 600-610nm；The wavelength of the blue-light LED chip is 450-460nm.Using above-mentioned blue-ray LED core
The light far-red light fluorescent powder that piece and the corresponding wavelength of red LED chip swash above-mentioned wavelength jointly realizes the excellent of 730nm emissive porwer
Gesture.
Further, in above-mentioned light emitting device, the blue-light LED chip and red LED chip are in parallel or series；The indigo plant
Light LED chip and the forward voltage difference of red LED chip are ± 0.1V (i.e. -0.1V~+0.1V)；The blue-light LED chip and
The current difference of red LED chip is ± 10mA (i.e. -10mA~+10mA).If voltage difference and current difference are larger, light emitting device
Resistance to rush of current stability is poor, is easy to cause the excessive, optical uniformity that decays to be deteriorated in this way, therefore, voltage difference and current difference exist
Light emitting device in above range, resistance to rush of current optimal stability.
The luminous strength ratio of the blue-light LED chip and red LED chip is (1.5-2): 1.It is obtained in the proportional region
Blue light and feux rouges combination peak wavelength and luminous intensity ratio it is similar with the excitation spectrum of far-red light fluorescent powder, such as Fig. 1 institute
Show, is able to ascend the launching efficiency of far-red light fluorescent powder in this way.
The present invention successively carried out test of many times, and it is further detailed as reference pair invention progress now to lift A partial experiment result
Thin description, is described in detail combined with specific embodiments below.
Embodiment 1
A kind of plant illumination semiconductor light-emitting apparatus, as shown in Fig. 2, the light emitting device include substrate and be located at the base
Blue-light LED chip, rouge and powder fluorescence coating and remote rouge and powder fluorescence coating, the rouge and powder being cascading on bottom and along light emission direction are glimmering
Photosphere contains red fluorescence powder, contains far-red light fluorescent powder in the remote rouge and powder fluorescence coating；
Blue-light LED chip issues the blue light of 450nm, and red fluorescence powder is selected from nitride red fluorescent powder, blue-light LED chip
Luminous intensity with the luminous strength ratio of red fluorescence powder excited by the blue-light LED chip be 1.5:1；Far-red light fluorescent powder group
As Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5.The mixture of nitride red fluorescent powder and silica gel is coated on chip list
Face forms rouge and powder fluorescence coating, and nitride red fluorescent powder accounts for the 40% of silica gel and fluorescent powder gross mass；Far-red light fluorescent powder and silicon
Glue mixing is placed on rouge and powder fluorescence coating, and far-red light fluorescent powder accounts for the 80% of silica gel and fluorescent powder gross mass.
Embodiment 2
A kind of plant illumination semiconductor light-emitting apparatus, as shown in Fig. 2, the light emitting device include substrate and be located at the base
Blue-light LED chip, rouge and powder fluorescence coating and remote rouge and powder fluorescence coating, the rouge and powder being cascading on bottom and along light emission direction are glimmering
Photosphere contains red fluorescence powder, contains far-red light fluorescent powder in the remote rouge and powder fluorescence coating；
Blue-light LED chip issues the blue light of 450nm, and red fluorescence powder is selected from nitride red fluorescent powder, blue-light LED chip
Luminous intensity with the luminous strength ratio of red fluorescence powder excited by the blue-light LED chip be 2:1；Far-red light fluorescent powder composition
For Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5.The mixture of nitride red fluorescent powder and silica gel is coated on chip surface
Rouge and powder fluorescence coating is formed, nitride red fluorescent powder accounts for the 40% of silica gel and fluorescent powder gross mass；Far-red light fluorescent powder and silica gel
Mixing is placed on rouge and powder fluorescence coating, and far-red light fluorescent powder accounts for the 80% of silica gel and fluorescent powder gross mass.
Embodiment 3
A kind of light emitting device of plant illumination, as shown in figure 3, including substrate and being located in the substrate and along luminous side
To the chip and remote rouge and powder fluorescence coating set gradually；The chip includes the blue-light LED chip being serially connected and red-light LED core
Piece contains far-red light fluorescent powder in the remote rouge and powder fluorescence coating；
Blue-light LED chip issues the blue light of 450nm, and red LED chip issues the feux rouges of 600nm；Blue-light LED chip and red
The forward voltage difference of light LED chip is 0.1V；The current difference of blue-light LED chip and red LED chip is 10mA, blue-ray LED core
The luminous strength ratio of piece and red LED chip is 1.5:1；Far-red light fluorescent powder group becomes Lu2.99Ce0.01Si0.5Ga4.45Cr0.0 5O11.5N0.5.Far-red light fluorescent powder is mixed with silica gel to be placed on blue-light LED chip and red LED chip, and far-red light fluorescent powder accounts for
The 80% of silica gel and fluorescent powder gross mass.
Embodiment 4
A kind of light emitting device of plant illumination, as shown in figure 3, including substrate and being located in the substrate and along luminous side
To the chip and remote rouge and powder fluorescence coating set gradually；The chip includes the blue-light LED chip being serially connected and red-light LED core
Piece contains far-red light fluorescent powder in the remote rouge and powder fluorescence coating；
Blue-light LED chip issues the blue light of 450nm, and red LED chip issues the feux rouges of 610nm；Blue-light LED chip and red
The forward voltage difference of light LED chip is -0.1V；The current difference of blue-light LED chip and red LED chip is -10mA；Blue-ray LED
The luminous strength ratio of chip and red LED chip is 2:1；Far-red light fluorescent powder group becomes Lu2.99Ce0.01Si0.5Ga4.45Cr0.0 5O11.5N0.5.Far-red light fluorescent powder is mixed with silica gel to be placed on blue-light LED chip and red LED chip, and far-red light fluorescent powder accounts for
The 80% of silica gel and fluorescent powder gross mass.
Comparative example 1
A kind of plant illumination semiconductor light-emitting apparatus, the light emitting device directly use the infrared chip light emitting of the LED of 730nm.
Emissive porwer variation of the light emitting device near 730nm in above-described embodiment 1-4 and comparative example 1 is as shown in table 1.
Table 1
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of light emitting device of plant illumination, which is characterized in that including substrate and be located in the substrate and along luminous side
To the blue-light LED chip, rouge and powder fluorescence coating and remote rouge and powder fluorescence coating set gradually, the rouge and powder fluorescence coating contains red fluorescence
Powder contains far-red light fluorescent powder in the remote rouge and powder fluorescence coating；
The chemical general formula of the far-red light fluorescent powder are as follows: A3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+)；Wherein, A is selected from Lu and Y
At least one of, and A must contain Lu, M is selected from least one of Si, Zr and Hf；0.001≤x≤0.05,0.01≤z≤
0.08,0.01≤y≤0.8.
2. light emitting device as described in claim 1, which is characterized in that in the chemical general formula of the far-red light fluorescent powder, A is
Lu, M Si, and 0.005≤x≤0.03,0.05≤z≤0.08,0.5≤y≤0.7.
3. light emitting device as described in claim 1, which is characterized in that the peak wavelength of the far-red light fluorescent powder is 710-
730nm；And/or
The peak wavelength of the red fluorescence powder is 600-610nm；And/or
The wavelength of the blue-light LED chip is 450-460nm.
4. light emitting device as described in claim 1, which is characterized in that the luminous intensity of the blue-light LED chip with it is described
The luminous strength ratio of the red fluorescence powder of blue-light LED chip excitation is (1.5-2): 1.
5. light emitting device as described in claim 1, which is characterized in that the red fluorescence powder is selected from nitride red fluorescence
At least one of powder, silicate red fluorescent powder and aluminate red fluorescent powder.
6. light emitting device as claimed in claim 5, which is characterized in that the nitride red fluorescent powder includes Sr2Si5N8:Eu2 +、Ca2Si5N8:Eu2+、(Sr,Ca)2Si5N8:Eu2+、(Ca,Sr)AlSiN3:Eu2+And SrAlSi4N7:Eu2+At least one of；
And/or
The aluminate red fluorescent powder includes Sr3Al2O6:Eu2+、Ca3Al2O6:Eu2+、(Sr,Ca)3Al2O6:Eu2+And Y2O3:
Eu3+At least one of；And/or
The silicate red fluorescent powder includes: DSiO5:Eu2+(Ba, Ca) SiO4:Eu2+,Mn2+At least one of；Wherein,
D is selected from least one of Sr, Ba, Ca and Mg.
7. a kind of light emitting device of plant illumination, which is characterized in that including substrate and be located in the substrate and along luminous side
To the chip and remote rouge and powder fluorescence coating set gradually；The chip includes blue-light LED chip and red LED chip, described remote red
Contain far-red light fluorescent powder in powder fluorescence coating；
The chemical general formula of the far-red light fluorescent powder are as follows: A3-xMyGa5-y-zO12-yNy:(zCr3+,xCe3+)；Wherein, A is selected from Lu and Y
At least one of, and A must contain Lu, M is selected from least one of Si, Zr and Hf；0.001≤x≤0.05,0.01≤z≤
0.08,0.01≤y≤0.8.
8. light emitting device as claimed in claim 7, which is characterized in that in the chemical general formula of the far-red light fluorescent powder, A is
Lu, B Si, and 0.005≤x≤0.03,0.05≤z≤0.08,0.5≤y≤0.7.
9. light emitting device as claimed in claim 7, which is characterized in that the peak wavelength of the far-red light fluorescent powder is 710-
730nm；And/or
The wavelength of the red LED chip is 600-610nm；And/or
The wavelength of the blue-light LED chip is 450-460nm.
10. light emitting device as claimed in claim 7, which is characterized in that the blue-light LED chip and red LED chip are in parallel
Or series connection；And/or
The forward voltage difference of the blue-light LED chip and red LED chip is ± 0.1V；And/or
The current difference of the blue-light LED chip and red LED chip is ± 10mA；And/or
The luminous strength ratio of the blue-light LED chip and red LED chip is (1.5-2): 1.
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| CN112186087A (en) * | 2020-08-28 | 2021-01-05 | 合肥工业大学 | Far-red light-near infrared light LED device preparation method and LED device |
| CN113355095A (en) * | 2021-03-03 | 2021-09-07 | 华南农业大学 | Near-infrared fluorescent powder, preparation method thereof and light-emitting device for supplementing light to pitaya |
| CN115799433A (en) * | 2023-01-09 | 2023-03-14 | 四川世纪和光科技发展有限公司 | Red light packaging structure, red light LED light source and packaging method |
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