CN110444651B - Optical device - Google Patents
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- CN110444651B CN110444651B CN201910617267.8A CN201910617267A CN110444651B CN 110444651 B CN110444651 B CN 110444651B CN 201910617267 A CN201910617267 A CN 201910617267A CN 110444651 B CN110444651 B CN 110444651B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 71
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
- 229910052765 Lutetium Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 239000002223 garnet Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000012858 packaging process Methods 0.000 abstract description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract description 4
- 238000004020 luminiscence type Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
An optical device comprises an LED chip and Ce3+Activated visible light luminescent material and near infrared luminescent material xA2O3·yIn2O3·bR2O3Wherein the element A in the near-infrared luminescent material is Sc andand/or Ga element, R element is one or two of Cr, Yb, Nd or Er element, wherein Cr is contained, x is more than or equal to 0.001 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, b is more than or equal to 0.001 and less than or equal to 0.2, and b/(x + y) is more than or equal to 0.001 and less than or equal to 0.2. The near-infrared luminescent material has the structure similar to that of beta-Ga2O3The same crystal structure. The optical device utilizes the realization mode that the LED chip is compounded with the infrared luminescent material and the visible light luminescent material, and simultaneously realizes near infrared and visible light luminescence by using the same LED chip, thereby greatly simplifying the packaging process, reducing the packaging cost, and having the characteristics of high luminous efficiency/excellent reliability, strong anti-interference capability, capability of realizing white light compensation and the like. The optical device provided by the embodiment of the invention has a great application prospect in the field of security protection.
Description
Technical Field
The embodiment of the invention relates to the technical field of infrared optics, in particular to an LED chip composite near-infrared luminescent material and Ce3+An optical arrangement of activated visible light emitting materials.
Background
In recent years, the application of near-infrared light in the fields of security monitoring, biological identification, 3D sensing, and food/medical detection has become a focus at home and abroad, and the near-infrared LED has become a focus of international research because of a series of advantages such as good directivity, low power consumption, and small volume. At present, the main implementation manner of the near-infrared LED is to use a near-infrared semiconductor chip, for example, 850nm and 940nm infrared chips are mainly applied in the security field, and one or more white LEDs are usually added for light compensation in the night detection process or to achieve the effect of color display. In the implementation mode, the infrared chip is high in price, multiple chips are packaged simultaneously, the process is complex, the cost is high, and the application and popularization of the infrared LED optical device are limited.
The near-infrared LED adopting the visible light chip to compound the near-infrared luminescent material has the advantages of simple preparation process, low cost, high luminous efficiency and the like, and the near-infrared luminescent material has rich emission wavelength and can realize various specific wavelengths of a plurality of near-infrared applications. The main problem of the current implementation mode is that the implementation mode still cannot solve the difficult problems of complex packaging process and the like in the white light compensation process.
Disclosure of Invention
Objects of the invention
Aiming at the problems in the existing visible light chip composite near-infrared luminescent material technology, the embodiment of the invention aims to provide an LED chip composite near-infrared luminescent material, Ce3+An optical arrangement of activated visible light emitting materials. The optical device simultaneously realizes near-infrared and visible light emission by using the same LED chip, greatly simplifies the packaging process and reduces the packaging cost.
(II) technical scheme
In order to achieve the above purpose, the technical solution of the embodiment of the present invention is as follows:
an optical device comprises an LED chip and Ce3+An activated visible light emitting material, and a near infrared emitting material;
the near-infrared luminescent material is xA2O3 .yIn2O3 .bR2O3The element A in the near-infrared luminescent material is Sc and/or Ga, the element R is one or two of Cr, Yb, Nd or Er, wherein Cr is contained, x is more than or equal to 0.001 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, b is more than or equal to 0.001 and less than or equal to 0.2, and b/(x + y) is more than or equal to 0.001 and less than or equal to 0.2.
Further, the near-infrared luminescent material has the structure similar to that of beta-Ga2O3The same crystal structure.
Further, the emission peak wavelength of the LED chip is located in the range of 420-470 nm.
Further, the visible light luminescent material has La3Si6N11The same crystal structure.
Further, the visible light luminescent material is (La, Y, Lu)3Si6N11:Ce3+。
Further, the visible light emitting material has a garnet structure.
Further, the visible light luminescent material is (Lu, Y, Gd)3(Al,Ga)5O12:Ce3+。
Further, the near-infrared luminescent material accounts for the Ce3+50-80% of the sum of the masses of the activated visible light-emitting materials.
Further, the optical device may further contain (Ca, Sr, Ba)2Si5N8:Eu2+And (Sr, Ca) AlSiN3:Eu2+One kind of red fluorescent powder.
(III) advantageous effects
The technical scheme of the embodiment of the invention has the following beneficial technical effects:
(1) the optical device utilizes the realization mode that the LED chip is compounded with the infrared luminescent material and the visible light luminescent material, and simultaneously realizes near-infrared and visible light luminescence by using the same LED chip, thereby greatly simplifying the packaging process and reducing the packaging cost;
(2) the optical device has the characteristics of high luminous efficiency/excellent reliability, strong anti-interference capability, capability of realizing white light compensation and the like;
(3) the infrared optical device provided by the embodiment of the invention has a good application prospect in the field of security protection.
Drawings
Fig. 1 is a schematic structural diagram of an optical device according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the embodiments of the present invention are described in further detail below with reference to the accompanying drawings in combination with the detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of embodiments of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the embodiments of the present invention.
An optical device according to an embodiment of the present invention is shown in fig. 1, and includes a semiconductor chip 1 on a base 4, and a glue filled around the semiconductor chip 1And a luminescent material 2, a plastic lens 5 covering the semiconductor chip 1, the glue and the luminescent material 2, and pins 3. Specifically, the optical device comprises an LED chip and Ce3+Activated visible light luminescent material and near infrared luminescent material xA2O3 .yIn2O3 .bR2O3Wherein the element A in the near-infrared luminescent material is Sc and/or Ga element, the element R is one or two of Cr, Yb, Nd or Er element, wherein Cr is contained, x is more than or equal to 0.001 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, b is more than or equal to 0.001 and less than or equal to 0.2, and b/(x + y) is more than or equal to 0.001 and less than or equal to 0.2, the near-infrared luminescent material has the same structure as that of beta-Ga2O3The same crystal structure.
Preferably, the emission peak wavelength of the LED chip is in the range of 420-470 nm.
Preferably, the visible light emitting material has a structure similar to that of La3Si6N11The same crystal structure.
Preferably, the visible light luminescent material is (La, Y, Lu)3Si6N11:Ce3+。
The elements La, Y and Lu in the molecular formula of the visible light luminescent material can exist independently or two or three elements can exist together.
Preferably, the visible light emitting material has a garnet structure.
Preferably, the visible light luminescent material is (Lu, Y, Gd)3(Al,Ga)5O12:Ce3+。
The elements Lu, Y and Gd in the molecular formula of the visible light luminescent material can exist independently or coexist in two or three elements, and the elements Al and Ga can exist independently or coexist in two elements.
Preferably, the near-infrared luminescent material accounts for the Ce3+50-80% of the sum of the masses of the activated visible light-emitting materials.
Preferably, the optical device may further contain (Ca, Sr, Ba)2Si5N8:Eu2+And (Sr, Ca) AlSiN3:Eu2+One kind of red fluorescent powder.
Compared with the prior art, the light-emitting device provided by the embodiment of the invention has the beneficial effects that:
(1) the optical device utilizes the realization mode that the LED chip is compounded with the infrared luminescent material and the visible light luminescent material, and simultaneously realizes near-infrared and visible light luminescence by using the same LED chip, thereby greatly simplifying the packaging process and reducing the packaging cost;
(2) the optical device has the characteristics of high luminous efficiency/excellent reliability, strong anti-interference capability, capability of realizing white light compensation and the like;
(3) the infrared optical device provided by the embodiment of the invention has a good application prospect in the field of security protection.
For further explanation of the present invention, the optical device provided in the present invention is described in detail with reference to the following examples, but it should be understood that these examples are implemented on the premise of the technical solution of the present invention, and the detailed implementation and the specific operation procedures are given only for further explanation of the features and advantages of the examples of the present invention, not for limitation of the claims of the present invention, and the scope of protection of the examples of the present invention is not limited to the following examples.
The devices and reagents used in the following examples are all commercially available.
Example 1
An optical device comprises a blue light LED chip with a wavelength of 455nm and a molecular formula Ga2O3 .0.05Cr2O3：Cr3+The near-infrared luminescent material has a molecular formula of La3Si6N11:Ce3+The visible light luminescent material is. The mass ratio of the infrared luminescent material to the visible light luminescent material is 1:1, the two luminescent materials are uniformly mixed in silica gel, the weight ratio of the two luminescent materials in the silica gel is 60%, and then the two luminescent materials are coated on an LED chip to obtain a luminescent light source.
The compositions of the luminescent materials of the optical devices described in examples 2 to 25 are shown in Table 1 below, and the structures of the optical devices in each example are the same as those of example 1, and they are obtained by mixing the luminescent materials in the examples according to their respective ratios based on the molecular formulas.
TABLE 1
As can be seen from table 1, the optical device according to the embodiment of the present invention can emit near infrared light by combining the single blue chip with the near infrared light emitting material, and simultaneously combine Ce with the near infrared light emitting material3+The active visible light luminescent material can simultaneously realize the emission of white light and near infrared light, and (Ca, Sr, Ba) can be added for obtaining white light with higher display index2Si5N8:Eu2+And (Sr, Ca) AlSiN3:Eu2+And (4) red fluorescent powder.
In summary, the embodiments of the present invention provide an optical device, which includes an LED chip, a Ce chip3+Activated visible light emitting material, and Ce3+An activated near-infrared luminescent material; the near-infrared luminescent material is xA2O3 .yIn2O3 .bR2O3The element A in the near-infrared luminescent material is Sc and/or Ga, the element R is one or two of Cr, Yb, Nd or Er, wherein Cr is contained, x is more than or equal to 0.001 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, b is more than or equal to 0.001 and less than or equal to 0.2, and b/(x + y) is more than or equal to 0.001 and less than or equal to 0.2. The optical device utilizes the realization mode that the LED chip is compounded with the infrared luminescent material and the visible light luminescent material, and simultaneously realizes near-infrared and visible light luminescence by using the same LED chip, thereby greatly simplifying the packaging process and reducing the packaging cost; the LED white light source has the characteristics of high luminous efficiency/excellent reliability, strong anti-interference capability, capability of realizing white light compensation and the like; and has good application prospect in the security field.
It is to be understood that the foregoing detailed description of the embodiments of the invention is merely exemplary in nature and is not intended to limit the embodiments of the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the embodiments of the present invention should be included in the protection scope of the embodiments of the present invention. Furthermore, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims, or the equivalents of such scope and boundaries.
Claims (8)
1. An optical device, comprising an LED chip, Ce3+An activated visible light emitting material, and a near infrared emitting material;
the near-infrared luminescent material is xA2O3 .yIn2O3 .bR2O3The element A in the near-infrared luminescent material is Sc and Ga, the element R is one or two of Cr, Yb, Nd or Er, wherein Cr is contained, x is more than or equal to 0.001 and less than or equal to 1, y is more than or equal to 0.1 and less than or equal to 1, b is more than or equal to 0.001 and less than or equal to 0.2, and b/(x + y) is more than or equal to 0.001 and less than or equal to 0.2;
the near-infrared luminescent material occupies the Ce3+50-80% of the sum of the masses of the activated visible light-emitting materials.
2. The optical device of claim 1, wherein the near-infrared luminescent material is selected from the group consisting of beta-Ga, and mixtures thereof2O3The same crystal structure.
3. The optical device as claimed in claim 1, wherein the emission peak wavelength of the LED chip is in the range of 420-470 nm.
4. The optical device of claim 3, wherein the visible light emissive material has a refractive index similar to La3Si6N11The same crystal structure.
5. An optical device as claimed in claim 4, characterized in that the optical device is adapted to be used as a light sourceThe visible light luminescent material is (La, Y, Lu)3Si6N11:Ce3+。
6. The optical device of claim 3, wherein the visible light emissive material has a garnet structure.
7. The optical device of claim 6, wherein the visible light emitting material is (Lu, Y, Gd)3(Al,Ga)5O12:Ce3+。
8. Optical device according to any of claims 1-7, characterized in that the optical device further comprises (Ca, Sr, Ba)2Si5N8:Eu2+And (Sr, Ca) AlSiN3:Eu2+One kind of red fluorescent powder.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910617267.8A CN110444651B (en) | 2019-07-09 | 2019-07-09 | Optical device |
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| CN201910617267.8A CN110444651B (en) | 2019-07-09 | 2019-07-09 | Optical device |
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| CN110444651B true CN110444651B (en) | 2021-02-26 |
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| DE3222217A1 (en) * | 1982-06-12 | 1983-12-15 | Günter Dr. 2000 Hamburg Huber | Cr<3+>-doped crystals for tunable solid state lasers |
| CN103911147A (en) * | 2014-01-13 | 2014-07-09 | 广东工业大学 | Near-infrared long-afterglow fluorescent powder and preparation method thereof |
| CN106967428A (en) * | 2017-03-13 | 2017-07-21 | 吉林大学 | Gallium zinc stannate near-infrared long-afterglow material that a kind of erbium, chromium are co-doped with and preparation method thereof |
| CN107118770B (en) * | 2017-06-16 | 2020-03-31 | 河北大学 | Near-infrared fluorescent powder and preparation method thereof |
| CN109161382B (en) * | 2017-09-30 | 2021-07-09 | 有研稀土新材料股份有限公司 | LED luminescent material, application and LED luminescent device |
| CN108148593A (en) * | 2018-01-29 | 2018-06-12 | 东南大学 | It is a kind of for phosphor material powder of near-infrared LED and preparation method thereof |
| CN108865139B (en) * | 2018-09-13 | 2020-06-23 | 厦门大学 | Broad-band near-infrared emission substance and light-emitting device containing same |
| CN108913135B (en) * | 2018-09-13 | 2020-06-23 | 厦门大学 | Broad-band near-infrared emission substance and light-emitting device containing same |
| CN109545941B (en) * | 2018-11-29 | 2021-11-12 | 江苏博睿光电有限公司 | Phosphor mixture and light-emitting device thereof |
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