WO2020007044A1 - 微波幅相控制器及微波幅度和/或相位的控制方法 - Google Patents

微波幅相控制器及微波幅度和/或相位的控制方法 Download PDF

Info

Publication number
WO2020007044A1
WO2020007044A1 PCT/CN2019/074442 CN2019074442W WO2020007044A1 WO 2020007044 A1 WO2020007044 A1 WO 2020007044A1 CN 2019074442 W CN2019074442 W CN 2019074442W WO 2020007044 A1 WO2020007044 A1 WO 2020007044A1
Authority
WO
WIPO (PCT)
Prior art keywords
microwave
amplitude
phase controller
conductive
substrate
Prior art date
Application number
PCT/CN2019/074442
Other languages
English (en)
French (fr)
Inventor
卢永春
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/488,000 priority Critical patent/US11061296B2/en
Publication of WO2020007044A1 publication Critical patent/WO2020007044A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C7/00—Modulating electromagnetic waves
    • H03C7/02—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
    • G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent

Definitions

  • the present disclosure relates to the technical field of microwave control, and in particular, to a microwave amplitude and phase controller and a method for controlling microwave amplitude and / or phase.
  • Microwave reconfigurable devices play an important role in establishing intelligent wireless communication networks and promoting the development of 5G communication technologies.
  • the existing microwave reconfigurable devices if only a single regulating mechanism is used at a fixed frequency position, either the amplitude of the output microwave signal can be controlled or the phase of the output microwave signal can only be controlled. The situation greatly limits the application scenarios of microwave reconfigurable devices.
  • the use of multiple control mechanisms can simultaneously control the amplitude and phase of the output microwave signal, the structure is complicated and the cost is expensive; moreover, multiple control mechanisms will consume more microwave energy and reduce the working efficiency of the microwave reconfigurable device.
  • An embodiment of the present disclosure provides a microwave amplitude and phase controller, comprising: a first substrate and a second substrate opposite to each other; a liquid crystal layer disposed between the first substrate and the second substrate; A conductive layer on a side of the first substrate facing the liquid crystal layer; the conductive layer is configured to receive a first voltage signal; and a resonance structure provided on a side of the second substrate facing the liquid crystal layer, the resonance structure is configured as Receiving a second voltage signal and configured to transmit a microwave signal.
  • the microwave amplitude-phase controller further includes: a first alignment film disposed between the conductive layer and the liquid crystal layer; and a second alignment film disposed between the resonance structure and the liquid crystal layer.
  • the resonance structure includes: a capacitor; a jumper conductive structure connected in parallel to both ends of the capacitor; and a first signal line and a second signal line respectively electrically connected to both ends of the capacitor, the The first signal line is used to receive a microwave signal to be regulated, and the second signal line is used to output a regulated microwave signal.
  • the capacitor includes first conductive strips and second conductive strips that are disposed at opposite and parallel intervals.
  • the first conductive strips and the second conductive strips are equal in length and width.
  • the conductive structure includes an axially symmetrical third conductive strip, and a symmetry axis of the third conductive strip is parallel to the first conductive strip and the second conductive strip.
  • the resonant structure further includes a first connection line and a second connection line, and the first conductive strip is connected to one end of the cross-conducting conductive structure and the first connection line through the first connection line.
  • a signal line is electrically connected, and the second conductive strip is electrically connected to the other end of the crossover conductive structure and the second signal line through the second connection line.
  • first conductive tape strip and the second conductive tape strip are both elongated and perpendicular to the first connection line and the second connection line, respectively.
  • the first conductive tape strip and the second conductive tape strip are arranged symmetrically with respect to a symmetry axis of the third conductive tape strip.
  • the length of the third conductive strip is less than or equal to 1 ⁇ ; wherein ⁇ is the working wavelength of the microwave to be adjusted.
  • the first conductive strip and the second conductive strip have a length of less than or equal to 0.5 ⁇ and a width of less than or equal to 0.5 ⁇ ; wherein ⁇ is an operating wavelength of a microwave to be adjusted.
  • the gap width between the first conductive strip and the second first conductive strip is less than or equal to 0.5 ⁇ ; where ⁇ is the working wavelength of the microwave to be adjusted.
  • the capacitor includes two opposed and spaced-apart interdigital electrodes.
  • the orthographic projection of the liquid crystal layer on the first substrate covers at least the orthographic projection of the capacitor on the first substrate.
  • the thickness of the liquid crystal layer is less than or equal to 0.5 ⁇ ; wherein ⁇ is the working wavelength of the microwave to be adjusted.
  • the microwave amplitude and phase controller further includes: a frame disposed between the first substrate and the second substrate, and the frame and the first substrate and the second substrate A cavity is enclosed, and the liquid crystal layer is filled in the cavity.
  • the alignment directions of the first alignment film and the second alignment film are the same.
  • the conductive layer is grounded.
  • An embodiment of the present disclosure provides a method for controlling a microwave amplitude and / or a phase of a microwave amplitude and phase controller according to the foregoing embodiment, including: connecting a first voltage signal to a conductive device of the microwave amplitude and phase controller. Layer, and connect the second voltage signal to the resonance structure of the microwave amplitude and phase controller; input a microwave signal to be regulated into the resonance structure of the microwave amplitude and phase controller, and adjust the first voltage signal and the first voltage signal The voltage difference between the two voltage signals until the regulated microwave signal output by the resonance structure has the required amplitude and / or phase.
  • FIG. 1 is a plan structural view of a microwave amplitude and phase controller according to an embodiment of the present disclosure, in which some details of the structure of the microwave amplitude and phase controller are shown;
  • FIG. 2 is a sectional structural view of the microwave amplitude-phase controller shown in FIG. 1 along a dotted line aa ′;
  • FIG. 3 is a dimension design diagram of each component of the resonance structure shown in FIG. 1;
  • FIG. 4 is a plan structural view of a microwave amplitude and phase controller according to another embodiment of the present disclosure.
  • FIG. 5 is a basic flowchart of a method for controlling a microwave amplitude and / or phase provided by an embodiment of the present disclosure
  • FIG. 6 is a basic flowchart of a microwave amplitude and / or phase control method according to another embodiment of the present disclosure
  • FIG. 7 is a basic flowchart of a microwave amplitude and / or phase control method according to another embodiment of the present disclosure.
  • FIG. 8 is an amplitude control curve diagram of a method for controlling a microwave amplitude and / or phase provided by an embodiment of the present disclosure
  • FIG. 9 is a phase control curve diagram of a microwave amplitude and / or phase control method according to an embodiment of the present disclosure.
  • FIG. 10 is a distribution diagram of the orientation of the liquid crystal molecules after a driving voltage is applied to the driving electrodes on both sides of the liquid crystal molecules, in which one driving electrode is a planar electrode and the other electrode is a linear electrode.
  • the plane on which the microwave amplitude and phase controller 100 is located (also regarded as the plane on which the first substrate 1 or the second substrate 2 is located) is the XOY plane.
  • the X direction and the Y direction are two directions perpendicular to each other; the direction perpendicular to the XOY plane and directed from the first substrate 1 to the second substrate 2 is the Z direction; however, such directional description should not be interpreted as Public restrictions.
  • the microwave amplitude and phase controller 100 includes: a first substrate 1 and a second substrate 2 opposite to each other; The conductive layer 3 and the first alignment film 5 on the side of the first substrate 1 facing the second substrate 2; the resonance structure 4 and the second alignment film 6 provided on the side of the second substrate 2 facing the first substrate 1 in this order; A liquid crystal layer 8 between a substrate 1 and a second substrate 2.
  • the conductive layer 3 is configured to receive a first voltage signal
  • the resonance structure 4 is configured to receive a second voltage signal.
  • the first voltage signal and / or the second voltage signal are adjustable so that the first voltage
  • the pressure difference between the signal and the second voltage signal is adjustable.
  • the resonance structure 4 is configured to transmit a microwave signal.
  • the resonance structure 4 has a microwave signal input end and a microwave signal output end, the microwave signal input end is used to receive a microwave signal, and the microwave signal output end is used to output a microwave signal.
  • a conductive layer 3 and a resonance structure 4 are respectively provided on the upper and lower sides of the liquid crystal layer 8, and the pressure difference between the two is adjustable; and the upper and lower sides of the liquid crystal layer 8 are also provided respectively.
  • the first alignment film 5 and the second alignment film 6 are used to align liquid crystal molecules.
  • the microwave amplitude-phase controller 100 When the microwave amplitude-phase controller 100 is used to control the microwave, the microwave is input to the resonance structure 4 and causes the resonance structure 4 to resonate. At the same time, the equivalent dielectric constant of the liquid crystal layer 8 will affect the resonance effect, thereby affecting the amplitude of the microwave. And phase, by adjusting the pressure difference applied to the two sides of the liquid crystal layer 8, the liquid crystal molecules are deflected to different degrees, which causes the equivalent dielectric constant of the liquid crystal layer 8 to change differently, thereby causing different resonances in the resonance structure 4 The effect can cause different changes in the amplitude and phase of the microwave. Finally, the desired amplitude and phase of the microwave can be obtained, and the microwave amplitude and phase can be controlled simultaneously.
  • the microwave amplitude and phase controller 100 provided in this embodiment can implement the simultaneous control of the amplitude and phase of the microwave without using multiple control mechanisms, and the structure is very simple. It is low in cost, does not consume much microwave energy, and has high work efficiency.
  • the microwave amplitude and phase controller 100 can be used to change only the phase of the microwave, or only the amplitude of the microwave, or both Different effects of changing the amplitude and phase of the microwave, that is, the above-mentioned microwave amplitude and phase controller 100 can be used alone as an amplitude controller, or as a phase controller (ie, a phase shifter), or both. Amplitude controller and phase controller.
  • the influence of the structural design of the resonant structure 4 on the effectiveness of the amplitude-phase control is very important.
  • the resonance structure 4 includes a capacitor, such as a slot capacitor C, and a cross-conducting structure L connected in parallel to both ends of the slot capacitor C.
  • a capacitor such as a slot capacitor C
  • a cross-conducting structure L connected in parallel to both ends of the slot capacitor C.
  • the resonance structure 4 further includes a first signal line 41 and a second signal line 42, which are respectively disposed at both ends of the slot capacitor C and are electrically connected to both ends of the slot capacitor C.
  • the first signal line 41 serves as a microwave signal input terminal of the resonance structure 4, that is, a microwave signal input terminal of the entire microwave amplitude and phase controller 100, and is configured to receive a microwave signal to be regulated.
  • the first signal line 42 is used as a microwave signal output terminal of the resonance structure 4, that is, the microwave signal output terminal of the entire microwave amplitude and phase controller 100, and is used to output a regulated microwave signal.
  • the first signal line 41 Both the length and the width of the second signal line 42 are equal.
  • the resonance structure 4 further includes a first connection line 431 and a second connection line 432.
  • One end of the gap capacitor C is electrically connected to one end of the conductive structure L and the first signal line 41 through the first connection line 431.
  • the other end is electrically connected to the other end of the bridge conductive structure L and the second signal line 42 through a second connection line 432.
  • the gap capacitor C includes two opposite and spaced conductive strips, namely a first conductive strip 433 and a second conductive strip 434.
  • the conductive strip is, for example, a metal strip, and the two conductive strips are, for example, long strips, which are parallel to each other.
  • the two conductive strips of the gap capacitor C are equal in length and width; the bridge conductive structure L includes a third conductive strip.
  • the crossover conductive structure L is an axisymmetric structure; optionally, the first connection line 431 and the second connection line 432 have the same length and the same width; the two conductive strips of the gap capacitor C are perpendicular to the first connection 431 line and The second connecting line 432; the two conductive strips of the gap capacitor C are symmetrically arranged with respect to the symmetry axis of the conductive structure L; the first signal line 41 and the second signal line 42 are symmetrical with respect to the symmetry axis of the conductive structure L Arranged so that the resonance structure 4 composed of the gap capacitor C, the bridge conductive structure L, the first connection line 431 and the second connection line 432, the first signal line 41 and the second signal line 42 has an axisymmetric structure, which is beneficial to Enhance resonance and improve quality factor.
  • the microwave amplitude and phase controller 100 with different size specifications, working frequency requirements, etc. should have different size design schemes.
  • the liquid crystal layer 8 in the microwave amplitude and phase controller 100 has a square shape as a whole, with one set of opposite sides parallel to the X direction and the other set of opposite edges parallel. In the Y direction.
  • the two conductive strips of the slot capacitor C of the resonant structure 4 are parallel to the Y direction.
  • various size parameters can be designed as follows (the following description assumes that the working wavelength of the microwave to be adjusted input to the microwave amplitude and phase controller 100 is ⁇ ):
  • the length x1 of the bridging conductive structure L (including the sum of the lengths of the portions parallel to the X direction and the portions parallel to the Y direction on both sides) ⁇ 1 ⁇ , optional, x1 ⁇ 0.5 ⁇ , and the width d1 ⁇ 0.5 ⁇ , optional , Width d1 ⁇ 0.2 ⁇ ;
  • the length of the two conductive strips of the gap capacitor C is x2 ⁇ 0.5 ⁇ , the width d2 ⁇ 0.5 ⁇ , optional, the width d2 ⁇ 0.2 ⁇ , the gap between the two conductive strips d3 ⁇ 0.5 ⁇ , optional, the width d3 ⁇ 0.2 ⁇ ;
  • the first signal line 41 and the second signal line 42 have a length x3 ⁇ 0.5 ⁇ , a width d4 ⁇ 0.5 ⁇ , and optionally, a width d4 ⁇ 0.2 ⁇ .
  • the gap capacitor C may include two opposite and spaced electrodes.
  • the two electrodes are interdigitated electrodes, and the finger portions of the two electrodes cross each other.
  • the two electrodes are, for example, Metal electrode.
  • the materials of the conductive layer 3 and the resonance structure 4 are conductive materials; optionally, the materials of the two are metals, such as metals such as gold, silver, copper, and aluminum.
  • the wire for supplying the first voltage signal may be connected to any position on the conductive layer 3, and the wire for supplying the second voltage signal may be connected to any position on the resonance structure 4, such as the first signal line 41.
  • the thickness of the conductive layer 3 and the resonance structure 4 can be in a range of 0.5 ⁇ or less.
  • the preparation process of the conductive layer 3 may be: forming a whole layer of conductive thin film on the first substrate 1 by using a conductive material, and performing processes such as evaporation, coating, printing, or deposition.
  • the preparation process of the resonant structure 4 may be as follows: first, a conductive material is used to form an entire layer of a film with a designed thickness on the second substrate 2; then a specific portion of the formed film is removed by a photolithography process; Resonant structure pattern.
  • the conductive layer 3 can be grounded, that is, the first voltage signal connected to the conductive layer 3 is a ground voltage, so that the potential of the conductive layer 3 can be fixed, and between the conductive layer 3 and the resonance structure 4 can be adjusted. In the case of a differential voltage, only the second voltage signal connected to the resonance structure 4 can be adjusted, which simplifies the operation.
  • the alignment directions of the first alignment film 5 and the second alignment film 6 are the same, so that when no voltage is applied to both sides of the liquid crystal layer 8, the liquid crystal molecules in the liquid crystal layer 8 have a uniform and uniform orientation.
  • the alignment direction of the first alignment film 5 and the second alignment film 6, that is, the orientation of the liquid crystal molecules in the liquid crystal layer 8 may be along the X-axis direction, or Along the Y axis, or any other direction on the XOY plane.
  • the thickness of the liquid crystal layer 8 may be in a range of 0.5 ⁇ or less.
  • the liquid crystal material nematic liquid crystal can be used.
  • the value of the dielectric constant of the first substrate 1 and the second substrate 2 may be 1.1 to 20, and may be 4.
  • the microwave amplitude and phase controller 100 may further include: a frame 7 disposed between the first substrate 1 and the second substrate 2, and the frame 7 cooperates with the first substrate. 1 and the second substrate 2 form a cavity 9, and the liquid crystal layer 8 is filled in the cavity 9.
  • the function of the frame 7 is to prevent the liquid crystal molecules in the liquid crystal layer 8 from leaking, and to maintain the gap between the first substrate 1 and the second substrate 2.
  • the frame 7 is the liquid crystal layer 8 sandwiched between the first substrate 1 and the second substrate 2.
  • the frame 7 can be selected from frame sealant.
  • the orthographic projection of the liquid crystal layer 8 on the first substrate 1 at least covers the orthographic projection of the gap capacitor C on the first substrate 1 so that the equivalent dielectric constant of the liquid crystal layer 8 can affect the gap capacitance C.
  • the resonance effect on the structure has a relatively sufficient influence, thereby fully affecting the microwave transmitted in the resonance structure 4.
  • the above is an introduction to the structure of the microwave amplitude and phase controller 100 provided in the present disclosure.
  • the method for controlling the amplitude and / or phase of the microwave using the microwave amplitude and phase controller 100 described above is described below.
  • the microwave amplitude and phase controller 100 in this embodiment, based on different operating frequencies, its control effect on the microwave is different. Specifically, when the operating frequency of the microwave amplitude-phase controller 100 is a certain frequency, it can simultaneously regulate and control the amplitude and phase of the microwave; when the operating frequency of the microwave amplitude-phase controller 100 is another frequency, it is only It can regulate the amplitude of the microwave; when the operating frequency of the microwave amplitude and phase controller 100 is another frequency, it can only regulate the phase of the microwave.
  • the internal structure of the microwave amplitude and phase controller 100 for example, adjusting the length, width, and shape of the bridge conductive structure L, and adjusting the length, width, and shape of the electrodes of the gap capacitor C, between the two electrodes Gap, etc., adjusting the coverage area of the liquid crystal layer 8, etc., to achieve the purpose of adjusting the operating frequency of the microwave amplitude and phase controller 100.
  • an embodiment of the present disclosure provides a method for controlling microwave amplitude and phase.
  • the control method includes the following steps:
  • the first voltage signal is connected to the conductive layer 3 of the microwave amplitude and phase controller 100 provided in the foregoing embodiment, and the second voltage signal is connected to the resonance structure 4 of the microwave amplitude and phase controller 100.
  • S12 Input the microwave signal to be adjusted into the resonance structure 4 of the microwave amplitude-phase controller 100, adjust the voltage difference between the first voltage signal and the second voltage signal, and change the equivalent dielectric constant of the liquid crystal layer 8 and affect The amplitude and phase of the microwave until the modulated microwave signal output by the resonance structure 4 has the required amplitude and phase.
  • the internal structure of the microwave amplitude and phase controller 100 needs to be designed in advance, so that its operating frequency is suitable for the situation where the amplitude and phase of the microwave are controlled at the same time.
  • an embodiment of the present disclosure provides a method for controlling a microwave phase.
  • the control method includes the following steps:
  • the first voltage signal is connected to the conductive layer 3 of the microwave amplitude and phase controller 100 provided in the foregoing embodiment, and the second voltage signal is connected to the resonance structure 4 of the microwave amplitude and phase controller 100.
  • the internal structure of the microwave amplitude and phase controller 100 needs to be designed in advance, so that its operating frequency is suitable for the case where only the phase of the microwave is controlled.
  • an embodiment of the present disclosure provides a method for controlling a microwave amplitude.
  • the control method includes the following steps:
  • the first voltage signal is connected to the conductive layer 3 of the microwave amplitude and phase controller 100 provided in the foregoing embodiment, and the second voltage signal is connected to the resonance structure 4 of the microwave amplitude and phase controller 100.
  • the internal structure of the microwave amplitude and phase controller 100 needs to be designed in advance, so that its working frequency is suitable for the case where the amplitude of the microwave is controlled.
  • a simulation model is established with the structure shown in FIG. 1 and FIG. 3.
  • the dielectric constant of the first substrate 1 and the second substrate 2 in the microwave amplitude and phase controller 100 is 4; the thickness of the liquid crystal layer 8 1mm; the length of the conductive structure L parallel to the X direction is 6mm, the length parallel to the Y direction is 6mm, the total length x1 is 18mm; the width d1 is 0.6mm; each of the two conductive strips of the gap capacitor C
  • the length x2 is 2mm, the width d2 is 0.7mm, the gap d3 between the two conductive strips is 0.7mm; the length x3 of the first signal line 41 and the second signal line 42 is 4mm, and the width d4 is 1mm.
  • the working frequency of the microwave amplitude-phase controller 100 is adjustable between 2.5 GHz and 3 GHz.
  • the equivalent dielectric constant of the liquid crystal layer 8 in a direction perpendicular to the first substrate 1 and the second substrate 2 From 2.5 to 3.3, the change represents a change in the liquid crystal molecules from horizontal alignment (parallel to the XOY plane) to vertical alignment (parallel to the Z axis).
  • the following expressions of the equivalent dielectric constants all refer to the equivalent dielectric constants of the liquid crystal layer 8 in a direction perpendicular to the first substrate 1 and the second substrate 2.
  • the equivalent dielectric constant of the liquid crystal layer 8 is changed from 2.5 to 3.3, and the amplitude of the microwave output by the microwave amplitude and phase controller 100 is changed.
  • Curve S1 shows the change in the amplitude of the microwave at various operating frequencies of the microwave amplitude and phase controller 100 when the liquid crystal molecules are aligned from the horizontal;
  • curve S2 shows the amplitude of the microwave in the microwave amplitude and phase controller 100 when the liquid crystal molecules are aligned from the vertical. Changes at each operating frequency.
  • the equivalent dielectric constant is changed from 2.5 to 3.3, according to the curves S1 and S2, it can be calculated that the amplitude change rate of the microwave is very large, close to 100%.
  • the equivalent dielectric constant of the liquid crystal layer 8 is changed from 2.5 to 3.3, and the phase of the microwave output by the microwave amplitude and phase controller 100 is changed.
  • Curve S3 shows the change of the phase of the microwave at various operating frequencies of the microwave amplitude and phase controller 100 when the liquid crystal molecules are aligned from the horizontal;
  • curve S4 shows the phase of the microwave at the microwave amplitude and phase controller 100 when the liquid crystal molecules are aligned from the vertical. Changes at each operating frequency.
  • the absolute phase shift of the microwave maximum phase value-minimum phase value. Under the premise of a certain working frequency of the microwave amplitude and phase controller 100, after the equivalent dielectric constant is changed from 2.5 to 3.3, according to the curves S3 and S4, the absolute phase shift of the microwave can be calculated to reach about 50 degrees.
  • FIG. 8 shows that when the microwave amplitude and phase controller 100 operates at 2.5 GHz, only the phase of the microwave can be changed, which is suitable for a scenario where only the phase of the microwave needs to be controlled.
  • the microwave amplitude and phase controller 100 works at more than 2.5GHz, it can meet The need to control only the amplitude of the microwave.
  • the electrodes used to drive the liquid crystal layer 8 include linear electrodes (that is, the strip-shaped electrodes of the gap capacitor C in the resonance structure 4), but can still ensure the effectiveness of liquid crystal drive.
  • the liquid crystal molecules in a certain range of the linear electrode and its surroundings can be effectively driven; and, only the equivalent permittivity of the liquid crystal layer directly below the linear electrode can be set under the action of the driving voltage.
  • the liquid crystal layer in other places remains unchanged for any driving voltage. After simulation, the results show that even under such settings, the microwave amplitude and phase controller 100 in the embodiment of the present disclosure can still The amplitude and / or phase of the signal is efficiently controlled.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Geometry (AREA)
  • Electromagnetism (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)

Abstract

一种微波幅相控制器及微波幅度和/或相位的控制方法，微波幅相控制器（100）包括：相对设置的第一基板（1）和第二基板（2）；设置于第一基板（1）和第二基板（2）之间的液晶层（8）；设置于第一基板（1）朝向液晶层（8）一面上的导电层（3），导电层（3）配置为接收第一电压信号；以及设置于第二基板（2）朝向液晶层（8）一面上的谐振结构（4），谐振结构（4）配置为接收第二电压信号，且配置为传输微波信号。

Description

微波幅相控制器及微波幅度和/或相位的控制方法
相关申请的交叉引用
本申请要求2018年7月2日提交中国专利局的专利申请201810710415.6的优先权，其全部内容通过引用合并于本申请中。
技术领域
本公开涉及微波控制技术领域，尤其涉及一种微波幅相控制器及微波幅度和/或相位的控制方法。
背景技术
微波可重构器件对于组建智能无线通信网络，促进5G通信技术发展具有重要作用。然而，现有的微波可重构器件，如果只使用单一调控机构在固定的频率位置上，要么只能针对输出微波信号的幅度进行控制，要么只能针对输出微波信号的相位进行控制，这种情况极大限制了微波可重构器件的应用场景。虽然使用多个调控机构可以实现同时对输出微波信号的幅度和相位进行控制，但结构复杂，造价昂贵；而且多个调控机构会消耗更多微波能量，降低了微波可重构器件的工作效率。
公开内容
本公开一实施例提供一种微波幅相控制器，包括：相对设置的第一基板和第二基板；设置于所述第一基板和所述第二基板之间的液晶层；设置于所述第一基板朝向所述液晶层一面上的导电层所述导电层配置为接收第一电压信号；以及设置于所述第二基板朝向所述液晶层一面上的谐振结构，所述谐振结构配置为接收第二电压信号，且配置为传输微波信号。
在一些实施例中，微波幅相控制器还包括：设置在所述导电层和液晶层之间的第一配向膜；以及设置在所述谐振结构和液晶层之间的第二配向膜。
在一些实施例中，所述谐振结构包括：电容；并联于所述电容两端的跨接导电结构；以及分别与所述电容的两端电连接的第一信号线和第二信号线，所述第一信号线用于接收待调控的微波信号，所述第二信号线用于输出调控后的微波信号。
在一些实施例中，所述电容包括相对且平行间隔设置的第一导电带条 和第二导电带条，所述第一导电带条和第二导电带条长度和宽度均相等，所述跨接导电结构包括轴对称的第三导电带条，所述第三导电带条的对称轴平行于第一导电带条和第二导电带条。
在一些实施例中，所述谐振结构还包括：第一连接线和第二连接线，所述第一导电带条通过所述第一连接线与所述跨接导电结构的一端及所述第一信号线电连接，所述第二导电带条通过所述第二连接线与所述跨接导电结构的另一端及所述第二信号线电连接。
在一些实施例中，所述第一导电带条和第二导电带条均且均为长条形，且分别垂直于所述第一连接线和所述第二连接线。
在一些实施例中，所述第一导电带条和第二导电带条相对于所述第三导电带条的对称轴线对称布置。
在一些实施例中，所述第三导电带条的长度小于或等于1λ；其中，λ为待调控的微波的工作波长。
在一些实施例中，所述第一导电带条和第二导电带条的长度小于或等于0.5λ，宽度小于或等于0.5λ；其中，λ为待调控的微波的工作波长。
在一些实施例中，所述第一导电带条和第二第一导电带条之间的间隙宽度小于或等于0.5λ；其中，λ为待调控的微波的工作波长。
在一些实施例中，所述电容包括两个相对且间隔设置的叉指状电极。
在一些实施例中，所述液晶层在所述第一基板上的正投影至少覆盖所述电容在所述第一基板上的正投影。
在一些实施例中，所述液晶层的厚度小于或等于0.5λ；其中，λ为待调控的微波的工作波长。
在一些实施例中，所述的微波幅相控制器还包括：设置于所述第一基板和所述第二基板之间的边框，所述边框与所述第一基板和所述第二基板围成腔体，所述液晶层填充于所述腔体中。
在一些实施例中，所述第一配向膜和所述第二配向膜的配向方向一致。
在一些实施例中，所述导电层接地。
本公开一实施例提供一种根据前述实施例中所述的微波幅相控制器的微波幅度和/或相位的控制方法，包括：将第一电压信号接入所述微波幅相控制器的导电层，并将第二电压信号接入所述微波幅相控制器的谐振结 构；向所述微波幅相控制器的谐振结构输入待调控的微波信号，调整所述第一电压信号和所述第二电压信号之间的压差，直至所述谐振结构输出的调控后的微波信号具有所需要的幅度和/或相位。
附图说明
为了更清楚地说明本公开实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1为本公开一实施例所提供的微波幅相控制器的平面结构图，其中示出了微波幅相控制器结构的部分细节；
图2为图1所示出的微波幅相控制器沿虚线aa′的截面结构图；
图3为图1所示出的谐振结构的各部件尺寸设计图；
图4为本公开另一实施例所提供的微波幅相控制器的平面结构图；
图5为本公开一实施例所提供的微波幅度和/或相位的控制方法的基本流程图；
图6为本公开另一实施例所提供的微波幅度和/或相位的控制方法的基本流程图；
图7为本公开又一实施例所提供的微波幅度和/或相位的控制方法的基本流程图；
图8为本公开一实施例所提供的微波幅度和/或相位的控制方法的幅度控制曲线图；
图9为本公开一实施例所提供的微波幅度和/或相位的控制方法的相位控制曲线图；
图10为液晶分子两侧的驱动电极上施加驱动电压后液晶分子指向的分布情况图，其中一侧的驱动电极为平面电极，另一侧的电极为线型电极。
具体实施方式
为使本公开的上述目的、特征和优点能够更加明显易懂，下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地 描述。显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其它实施例，均属于本公开保护的范围。
需要说明的是，在本公开的实施例中，为了描述方便，以微波幅相控制器100所在的平面(也可视为第一基板1或第二基板2所在的平面)为XOY平面，在XOY平面中，X方向和Y方向为相互垂直的两个方向；垂直于XOY平面且由第一基板1指向第二基板2的方向为Z方向，但是，这样的方向性描述不应理解为对本公开的限制。
本公开的一实施例提出了一种微波幅相控制器，如图1和图2所示，该微波幅相控制器100包括：相对设置的第一基板1和第二基板2；依次设置于第一基板1朝向第二基板2一面上的导电层3及第一配向膜5；依次设置于第二基板2朝向第一基板1一面上的谐振结构4及第二配向膜6；设置于第一基板1和第二基板2之间的液晶层8。
上述微波幅相控制器100中，导电层3配置为接收第一电压信号，谐振结构4配置为接收第二电压信号，第一电压信号和/或第二电压信号可调，从而使得第一电压信号与第二电压信号之间的压差可调。
谐振结构4配置为传输微波信号。示例性的，谐振结构4具有微波信号输入端和微波信号输出端，微波信号输入端用于接收微波信号，微波信号输出端用于输出微波信号。
上述微波幅相控制器100中，在液晶层8的上下两侧分别设有导电层3和谐振结构4，二者之间的压差可调；并且液晶层8的上下两侧还分别设有第一配向膜5和第二配向膜6，以对液晶分子进行配向。当改变导电层3和谐振结构4之间的压差时，液晶分子会发生偏转，从而液晶层8的等效介电常数发生变化。
当采用该微波幅相控制器100对微波进行控制时，微波输入谐振结构4，引起谐振结构4产生谐振，同时液晶层8的等效介电常数会对谐振效应产生影响，从而影响微波的幅度和相位，通过调节施加在液晶层8两侧的压差，使液晶分子产生不同程度的偏转，引起液晶层8的等效介电常数产生不同的变化，从而对谐振结构4中的谐振产生不同的影响，能够使得 微波的幅度和相位发生不同的变化，最终可以得到期望的幅度和相位的微波，实现了对微波幅度和相位的同时控制。
相比于现有的同时对微波幅度和相位控制的装置，本实施例所提供的微波幅相控制器100无需使用多个调控机构就能够实现对微波幅度和相位的同时控制，结构十分简单，造价低廉，并且不会消耗太多的微波能量，工作效率较高。
此外，通过对微波幅相控制器100内部结构的设计，改变微波幅相控制器100的工作频率，可以使微波幅相控制器100实现仅改变微波的相位，或者仅改变微波的幅度，或者同时改变微波的幅度和相位的不同效果，也就是说，上述微波幅相控制器100既可单独用作幅度控制器，也可单独用作相位控制器(即移相器)，也可同时用作幅度控制器和相位控制器。
在上述微波幅相控制器100中，谐振结构4的结构设计对于幅相控制的有效性的影响十分重要，下面示例性的给出一些可能的设计。
请参见图1，谐振结构4包括电容，例如为缝隙电容C，及并联于缝隙电容C两端的跨接导电结构L。当微波输入时，微波会引起缝隙电容C发生耦合，产生谐振，缝隙电容C上的谐振作用会感应跨接导电结构L，跨接导电结构L又会反过来影响缝隙电容C上的谐振，从而使得整个谐振结构4产生品质因数极高的谐振效应。
谐振结构4还包括第一信号线41和第二信号线42，分别设置于缝隙电容C的两端，与缝隙电容C的两端电连接。第一信号线41作为谐振结构4的微波信号输入端，也即整个微波幅相控制器100的微波信号输入端，用于接收待调控的微波信号。第一信号线42作为谐振结构4的微波信号输出端，也即整个微波幅相控制器100的微波信号输出端，用于输出调控后的微波信号，在一实施例中，第一信号线41和第二信号线42的长度和宽度均相等。
谐振结构4还包括：第一连接线431和第二连接线432，缝隙电容C的一端通过第一连接线431与跨接导电结构L的一端及第一信号线41电连接，缝隙电容C的另一端通过第二连接线432与跨接导电结构L的另一端及第二信号线42电连接。
作为一种可能的设计，请继续参见图1，缝隙电容C包括两个相对且间隔设置的导电带条，即第一导电带条433和第二导电带条434。导电带条例如为金属带条，两导电带条例如为长条状，且相互平行，缝隙电容C的两个导电带条长度相等，宽度也相等；跨接导电结构L包括第三导电带条，跨接导电结构L为轴对称结构；可选的，第一连接线431和第二连接线432的长度相等，宽度也相等；缝隙电容C的两导电带条垂直于第一连接431线和第二连接线432；缝隙电容C的两条导电带条相对于跨接导电结构L的对称轴线对称布置；第一信号线41和第二信号线42相对于跨接导电结构L的对称轴线对称布置，以使得缝隙电容C、跨接导电结构L、第一连接线431和第二连接线432、第一信号线41和第二信号线42所构成的谐振结构4具有轴对称结构，有利于增强谐振，提高品质因数。
对于谐振结构4的各项尺寸设计，不同尺寸规格、工作频率要求等的微波幅相控制器100应有不同的尺寸设计方案。
示例性的，以图1中所示出的谐振结构4的结构为例，微波幅相控制器100中液晶层8整体呈方形，其一组对边平行于X方向，另一组对边平行于Y方向。谐振结构4的缝隙电容C的两导电带条平行于Y方向。请参见图3，各项尺寸参数可采取如下设计(以下描述中假设向微波幅相控制器100所输入的待调控的微波的工作波长为λ)：
跨接导电结构L的长度x1(包括平行于X方向的部分和两侧平行于Y方向的部分的长度之和)≤1λ，可选的，x1≤0.5λ，宽度d1≤0.5λ，可选的，宽度d1≤0.2λ；
缝隙电容C的两导电带条的长度x2≤0.5λ，宽度d2≤0.5λ，可选的，宽度d2≤0.2λ，两导电带条之间的间隙d3≤0.5λ，可选的，宽度d3≤0.2λ；
第一信号线41和第二信号线42的长度x3≤0.5λ，宽度d4≤0.5λ，可选的，宽度d4≤0.2λ。
在另外的实施例中，请参见图4，缝隙电容C可包括两个相对且间隔设置的电极，该两电极为叉指状电极，两电极的指状部分相互交叉，所述两电极例如为金属电极。
在本公开的实施例中，导电层3和谐振结构4的材料为导电材料；可选的，二者的材料为金属，例如：金、银、铜、铝等金属。用于供应第一电压信号的导线可连接于导电层3上的任意位置，用于供应第二电压信号的导线可连接于谐振结构4上的任意位置，例如第一信号线41。
导电层3和谐振结构4的厚度的取值范围可以小于等于0.5λ。
导电层3的制备过程可为：采用导电材料，进行蒸镀、涂覆、印刷或淀积等工艺，在第一基板1上形成一整层的导电薄膜。谐振结构4的制备过程可为：首先采用导电材料在第二基板2形成具有设计厚度的一整层的薄膜，然后采用光刻工艺去除所形成的薄膜中的特定部分，保留部分形成所需要的谐振结构图案。
在一些实施例中，可将导电层3接地，即导电层3所接入的第一电压信号为接地电压，这样可以使得导电层3的电位固定，在调节导电层3与谐振结构4之间的压差时，可以仅对谐振结构4所接入的第二电压信号进行调节，简化操作。
第一配向膜5和第二配向膜6的配向方向一致，以使得液晶层8两侧未施加电压时，液晶层8中的液晶分子具有均匀一致的取向。第一配向膜5和第二配向膜6的配向方向，也即液晶层8中的液晶分子的取向(此处所述的取向特指液晶分子长轴的指向)，可沿X轴方向，或沿Y轴方向，或沿XOY平面上的其它任一方向。
液晶层8的厚度的取值范围可为小于等于0.5λ。液晶材料可选用向列相液晶。
第一基板1和第二基板2的介电常数的取值范围可为1.1～20，可选为4。
请再次参见图1和图2，本公开一实施例所提供的微波幅相控制器100还可包括：设置于第一基板1和第二基板2之间的边框7，边框7配合第一基板1和第二基板2形成空腔9，液晶层8填充于该空腔9中。边框7的作用为防止液晶层8中的液晶分子泄露，且维持第一基板1和第二基板2之间的间隙，为夹设于第一基板1和第二基板2之间的液晶层8提供支撑。边框7可以选用封框胶。
作为一种可能的设计，液晶层8在第一基板1上的正投影至少覆盖缝隙电容C在第一基板1上的正投影，以使得液晶层8的等效介电常数能够对缝隙电容C上的谐振效应产生比较充分的影响，从而充分影响谐振结构4中所传输的微波。
以上是对本公开所提供的微波幅相控制器100的结构的介绍，下面对采用上述微波幅相控制器100控制微波的幅度和/或相位的方法进行介绍。
需要说明的是，对于本实施例中的微波幅相控制器100，基于工作频率不同，其对微波的控制效果不同。具体的，当微波幅相控制器100的工作频率为某一频率时，其可以对微波的幅度和相位同时产生调控作用；当微波幅相控制器100的工作频率为另一频率时，其仅可对微波的幅度产生调控作用；当微波幅相控制器100的工作频率为又一频率时，其仅可对微波的相位产生调控作用。在实际应用时，通过调整微波幅相控制器100的内部结构，比如：调节跨接导电结构L的长度、宽度、形状等，调节缝隙电容C的电极的长度、宽度、形状、两电极之间的间隙等，调节液晶层8的覆盖面积，等等，达到调整微波幅相控制器100的工作频率的目的。
请参见图5，本公开一实施例提供了一种微波幅度和相位的控制方法，该控制方法包括如下步骤：
S11：将第一电压信号接入前述实施例所提供的微波幅相控制器100的导电层3，并将第二电压信号接入微波幅相控制器100的谐振结构4。
S12：向微波幅相控制器100的谐振结构4输入待调控的微波信号，调整第一电压信号和第二电压信号之间的压差，使液晶层8的等效介电常数发生变化，影响微波的幅度和相位，直至谐振结构4输出的调控后的微波信号具有所需要的幅度和相位。
需要说明的是，在执行上述方法步骤之前，需要预先对微波幅相控制器100的内部结构进行设计，使其工作频率适用于同时对微波的幅度和相位进行控制的情形。
参见图6，本公开实施例提供了一种微波相位的控制方法，该控制方法包括如下步骤：
S21：将第一电压信号接入前述实施例所提供的微波幅相控制器100的导电层3，并将第二电压信号接入微波幅相控制器100的谐振结构4。
S22：向微波幅相控制器100的谐振结构4输入待调控的微波信号，调整第一电压信号和第二电压信号之间的压差，使液晶层8的等效介电常数发生变化，影响微波的相位，直至谐振结构4输出的调控后的微波信号具有所需要的相位。
需要说明的是，在执行上述方法步骤之前，需要预先对微波幅相控制器100的内部结构进行设计，使其工作频率适用于仅对微波的相位进行控制的情形。
参见图7，本公开实施例提供了一种微波幅度的控制方法，该控制方法包括如下步骤：
S31：将第一电压信号接入前述实施例所提供的微波幅相控制器100的导电层3，并将第二电压信号接入微波幅相控制器100的谐振结构4。
S32：向微波幅相控制器100的谐振结构4输入待调控的微波信号，调整第一电压信号和第二电压信号之间的压差，使液晶层8的等效介电常数发生变化，影响微波的幅度，直至谐振结构4输出的调控后的微波信号具有所需要的幅度。
需要说明的是，在执行上述方法步骤之前，需要预先对微波幅相控制器100的内部结构进行设计，使其工作频率适用于对微波的幅度进行控制的情形。
示例性的，以图1和图3中所示出的结构建立仿真模型，假设微波幅相控制器100中，第一基板1和第二基板2的介电常数为4；液晶层8的厚度为1mm；跨接导电结构L平行于X方向的长度为6mm，平行于Y方向的长度为6mm，总长度x1为18mm；宽度d1为0.6mm；缝隙电容C的两导电带条中的每一个长度x2为2mm，宽度d2为0.7mm，两导电带条之间的间隙d3为0.7mm；第一信号线41和第二信号线42的长度x3为4mm，宽度d4为1mm。经过模拟仿真，可知上述微波幅相控制器100的工作频率在2.5GHz～3GHz之间可调。
当所述第一电压信号和所述第二电压信号之间的压差由零变为最大值时，液晶层8的垂直于第一基板1和第二基板2方向上的等效介电常数从2.5变为3.3，该变化过程代表液晶分子从水平取向(平行于XOY平面)变化为垂直取向(平行于Z轴)的变化过程。为了方便描述，以下对于等 效介电常数的表述均指液晶层8的垂直于第一基板1和第二基板2方向上的等效介电常数。
请参见图8，显示了液晶层8的等效介电常数从2.5变为3.3，该微波幅相控制器100所输出的微波的幅度的变化情况。曲线S1表示液晶分子从水平取向时，微波的幅度在微波幅相控制器100的各个工作频率下的变化情况；曲线S2表示液晶分子从垂直取向时，微波的幅度在微波幅相控制器100的各个工作频率下的变化情况。
微波的幅度变化率＝(最大幅度值-最小幅度值)/幅度中间值，而幅度中间值＝(最大幅度值+最小幅度值)/2。在微波幅相控制器100的工作频率一定的前提下，等效介电常数从2.5变为3.3后，根据曲线S1和S2，可计算得到微波的幅度变化率很大，接近100％。
例如，当微波幅相控制器100的工作频率为2.8909GHz时：等效介电常数ε＝2.5时，微波的幅度＝0.72734204(最大幅度值)；等效介电常数ε＝3.3时，微波的幅度＝0.25685124(最小幅度值)。因此，计算可得为微波的幅度变化率为95％，接近100％。这说明该微波幅相控制器100对微波幅度的可调范围很大。
请参见图9，显示了液晶层8的等效介电常数从2.5变为3.3，该微波幅相控制器100所输出的微波的相位的变化情况。曲线S3表示液晶分子从水平取向时，微波的相位在微波幅相控制器100的各个工作频率下的变化情况；曲线S4表示液晶分子从垂直取向时，微波的相位在微波幅相控制器100的各个工作频率下的变化情况。
微波的绝对相移＝最大相位值-最小相位值。在微波幅相控制器100的工作频率一定的前提下，等效介电常数从2.5变为3.3后，根据曲线S3和S4，可计算得到微波的绝对相移达到50度左右。
例如，当微波幅相控制器100的工作频率为2.7001GHz时：等效介电常数ε＝2.5时，微波的相位＝-286.90065(最大幅度值)；等效介电常数ε＝3.3时，微波的相位＝-333.60157(最小幅度值)。因此，计算可得为微波的绝对相移为46.7度。这说明该微波幅相控制器100对微波相位的可调范围并不算小，在实际应用时若想获得更大的相移量，可将多个微波幅相控制器100叠加使用。
此外，综合图8和图9，可以发现，当微波幅相控制器100的工作频率在2.7GHz左右时，液晶层8的等效介电常数的变化，引起微波的幅度和相位同时变化，这说明该微波幅相控制器100工作在2.7GHz左右时，能够使微波的幅度和相位同时发生变化，适用于需要对微波的幅度和相位同时进行控制的场景。
当微波幅相控制器100的工作频率为2.5GHz时，液晶层8的等效介电常数的变化，不能引起微波的幅度发生变化(参见图8)，但能够引起微波的相位发生变化(参见图9)，这说明该微波幅相控制器100工作在2.5GHz时，仅能够使微波的相位发生变化，适用于仅需要对微波的相位进行控制的场景。
至于仅需要对微波的幅度进行控制的场景，由于通常情况下对微波的幅度进行控制时，不会关注相位是否发生了变化，因此当微波幅相控制器100工作在大于2.5GHz时，可以满足仅对微波的幅度进行控制的需求。
需要说明的是，本公开的实施例中，对液晶层8进行驱动所采用的电极包括线型电极(即谐振结构4中缝隙电容C的带条状电极)，但是仍然能够保证对液晶的有效驱动。请参见图10，在线型电极及其周围一定范围内的液晶分子均能够被有效驱动；并且，设定只有线型电极正下方的液晶层的等效介电常数才会在驱动电压的作用发生变化，而在其他地方的液晶层对于任何的驱动电压都保持不变，经过模拟仿真，结果显示，即便在这样的设定下，本公开实施例中的微波幅相控制器100仍然能够对微波信号的幅度和/或相位进行高效控制。
以上所述仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (17)

  1. 一种微波幅相控制器，包括：
    相对设置的第一基板和第二基板；
    设置于所述第一基板和所述第二基板之间的液晶层；
    设置于所述第一基板朝向所述液晶层一面上的导电层所述导电层配置为接收第一电压信号；以及
    设置于所述第二基板朝向所述液晶层一面上的谐振结构，所述谐振结构配置为接收第二电压信号，且配置为传输微波信号。
  2. 根据权利要求1所述的微波幅相控制器，还包括：
    设置在所述导电层和液晶层之间的第一配向膜；以及
    设置在所述谐振结构和液晶层之间的第二配向膜。
  3. 根据权利要求1或2所述的微波幅相控制器，其中，所述谐振结构包括：
    电容；
    并联于所述电容两端的跨接导电结构；以及
    分别与所述电容的两端电连接的第一信号线和第二信号线，所述第一信号线用于接收待调控的微波信号，所述第二信号线用于输出调控后的微波信号。
  4. 根据权利要求3所述的微波幅相控制器，其中，所述电容包括相对且平行间隔设置的第一导电带条和第二导电带条，所述第一导电带条和第二导电带条长度和宽度均相等，所述跨接导电结构包括轴对称的第三导电带条，所述第三导电带条的对称轴平行于第一导电带条和第二导电带条。
  5. 根据权利要求4所述的微波幅相控制器，其中，所述谐振结构还包括：第一连接线和第二连接线，所述第一导电带条通过所述第一连接线与所述跨接导电结构的一端及所述第一信号线电连接，所述第二导电带条通过所述第二连接线与所述跨接导电结构的另一端及所述第二信号线电连接。
  6. 根据权利要求5所述的微波幅相控制器，其中，所述第一导电带条和第二导电带条均且均为长条形，且分别垂直于所述第一连接线和所述第二连接线。
  7. 根据权利要求4所述的微波幅相控制器，其中，所述第一导电带条和第二导电带条相对于所述第三导电带条的对称轴线对称布置。
  8. 根据权利要求4所述的微波幅相控制器，其中，所述第三导电带条的长度小于或等于1λ；其中，λ为待调控的微波的工作波长。
  9. 根据权利要求4所述的微波幅相控制器，其中，所述第一导电带条和第二导电带条的长度小于或等于0.5λ，宽度小于或等于0.5λ；其中，λ为待调控的微波的工作波长。
  10. 根据权利要求6所述的微波幅相控制器，其中，所述第一导电带条和第二第一导电带条之间的间隙宽度小于或等于0.5λ；其中，λ为待调控的微波的工作波长。
  11. 根据权利要求3所述的微波幅相控制器，其中，所述电容包括两个相对且间隔设置的叉指状电极。
  12. 根据权利要求3所述的微波幅相控制器，其中，所述液晶层在所述第一基板上的正投影至少覆盖所述电容在所述第一基板上的正投影。
  13. 根据权利要求3所述的微波幅相控制器，其中，所述液晶层的厚度小于或等于0.5λ；其中，λ为待调控的微波的工作波长。
  14. 根据权利要求1所述的微波幅相控制器，其中，还包括：设置于所述第一基板和所述第二基板之间的边框，所述边框与所述第一基板和所述第二基板围成腔体，所述液晶层填充于所述腔体中。
  15. 根据权利要求2所述的微波幅相控制器，其中，所述第一配向膜和所述第二配向膜的配向方向一致。
  16. 根据权利要求1所述的微波幅相控制器，其中，所述导电层接地。
  17. 一种根据权利要求1-16中任一所述的微波幅相控制器的微波幅度和/或相位的控制方法，包括：
    将第一电压信号接入所述微波幅相控制器的导电层，并将第二电压信号接入所述微波幅相控制器的谐振结构；
    向所述微波幅相控制器的谐振结构输入待调控的微波信号，调整所述第一电压信号和所述第二电压信号之间的压差，直至所述谐振结构输出的调控后的微波信号具有所需要的幅度和/或相位。
PCT/CN2019/074442 2018-07-02 2019-02-01 微波幅相控制器及微波幅度和/或相位的控制方法 WO2020007044A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/488,000 US11061296B2 (en) 2018-07-02 2019-02-01 Microwave amplitude-phase controller and method of controlling amplitude and/or phase of microwave

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810710415.6 2018-07-02
CN201810710415.6A CN108828811B (zh) 2018-07-02 2018-07-02 微波幅相控制器及微波幅度和/或相位的控制方法

Publications (1)

Publication Number Publication Date
WO2020007044A1 true WO2020007044A1 (zh) 2020-01-09

Family

ID=64134289

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/074442 WO2020007044A1 (zh) 2018-07-02 2019-02-01 微波幅相控制器及微波幅度和/或相位的控制方法

Country Status (3)

Country Link
US (1) US11061296B2 (zh)
CN (1) CN108828811B (zh)
WO (1) WO2020007044A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108828811B (zh) * 2018-07-02 2021-01-26 京东方科技集团股份有限公司 微波幅相控制器及微波幅度和/或相位的控制方法
CN109921190B (zh) 2019-02-25 2020-06-30 北京京东方传感技术有限公司 信号调节器、天线装置和制造方法
CN110233315B (zh) * 2019-06-14 2021-12-28 京东方科技集团股份有限公司 移相度补偿装置、移相度补偿系统及方法
US11803086B2 (en) * 2020-12-22 2023-10-31 Innolux Corporation Electronic device and manufacturing method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004104382A (ja) * 2002-09-09 2004-04-02 Toshiba Corp マイクロ波移相器
JP2006019855A (ja) * 2004-06-30 2006-01-19 Dainippon Ink & Chem Inc 可変機能デバイス
CN106532200A (zh) * 2016-12-16 2017-03-22 合肥工业大学 一种基于石墨烯电极的反射式液晶移相单元
CN206210991U (zh) * 2016-11-29 2017-05-31 河北工业大学 一种液晶微波调制器件
CN107394318A (zh) * 2017-07-14 2017-11-24 合肥工业大学 一种用于反射式可调移相器的液晶移相单元
CN108828811A (zh) * 2018-07-02 2018-11-16 京东方科技集团股份有限公司 微波幅相控制器及微波幅度和/或相位的控制方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007225644A (ja) * 2006-02-21 2007-09-06 Epson Imaging Devices Corp 電気光学装置の製造方法、電気光学装置、及び電子機器
EP2500977B1 (en) * 2011-03-16 2015-09-16 Alcatel Lucent Phase shifting device
US9268016B2 (en) 2012-05-09 2016-02-23 Duke University Metamaterial devices and methods of using the same
CN103401077A (zh) * 2013-07-05 2013-11-20 西安交通大学 一种基于交指电容的小型化人工磁导体及应用
US10784570B2 (en) * 2017-06-22 2020-09-22 Innolux Corporation Liquid-crystal antenna device
CN107453727B (zh) * 2017-08-07 2021-01-15 大连海事大学 一种低插入损耗的负群时延微波电路
CN107508572B (zh) * 2017-08-07 2021-01-15 大连海事大学 一种基于分布参数实现的宽带负群时延微波电路
CN107490727B (zh) * 2017-08-17 2019-10-18 河南师范大学 一种复合微波传感器以及被测物的介电常数测量方法
CN108490270B (zh) * 2018-07-02 2020-01-24 京东方科技集团股份有限公司 液晶介电常数的测量装置、测量系统、测量方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004104382A (ja) * 2002-09-09 2004-04-02 Toshiba Corp マイクロ波移相器
JP2006019855A (ja) * 2004-06-30 2006-01-19 Dainippon Ink & Chem Inc 可変機能デバイス
CN206210991U (zh) * 2016-11-29 2017-05-31 河北工业大学 一种液晶微波调制器件
CN106532200A (zh) * 2016-12-16 2017-03-22 合肥工业大学 一种基于石墨烯电极的反射式液晶移相单元
CN107394318A (zh) * 2017-07-14 2017-11-24 合肥工业大学 一种用于反射式可调移相器的液晶移相单元
CN108828811A (zh) * 2018-07-02 2018-11-16 京东方科技集团股份有限公司 微波幅相控制器及微波幅度和/或相位的控制方法

Also Published As

Publication number Publication date
US11061296B2 (en) 2021-07-13
US20200379284A1 (en) 2020-12-03
CN108828811B (zh) 2021-01-26
CN108828811A (zh) 2018-11-16

Similar Documents

Publication Publication Date Title
WO2020007044A1 (zh) 微波幅相控制器及微波幅度和/或相位的控制方法
US10741921B2 (en) Multi-layered software defined antenna and method of manufacture
US11158916B2 (en) Phase shifter and liquid crystal antenna
WO2020233697A1 (zh) 移相器和液晶天线
JP7424977B2 (ja) 液晶移相器およびその操作方法、液晶アンテナ、通信機器
US11095028B2 (en) Frequency tunable antenna and method of manufacturing the same, display panel
US5790719A (en) Optical control device
WO2021259142A1 (zh) 移相器及天线
US11949142B2 (en) Feeding structure, microwave radio frequency device and antenna
CN113728512B (zh) 移相器及天线
WO2019233127A1 (zh) 可调带阻滤波器及其驱动方法和电子装置
US11189920B2 (en) Control substrate, liquid crystal phase shifter and method of forming control substrate
WO2019233140A1 (zh) 液晶移相器及电子装置
WO2019233128A1 (zh) 可调极化变换器和电子装置
CN216120679U (zh) 一种液晶移相器和液晶天线
WO2019223647A1 (zh) 一种移相器及其操作方法、天线和通信设备
WO2023140243A1 (ja) リフレクトアレイ
CN1808765A (zh) 用bst陶瓷材料制作的微型电控波束扫描阵列微带天线
JP7371184B2 (ja) 電磁波伝送構造体
CN1812194A (zh) 用bst陶瓷制作的微型电控波束扫描陈列天线
WO2023225983A1 (zh) 移相器及电子设备
WO2023231702A1 (zh) 液晶天线阵列、电子装置
WO2024000289A1 (zh) 一种移相器单元及移相器
WO2023159471A1 (zh) 天线结构、阵列天线和电子设备
US20240006762A1 (en) Liquid Crystal Phase Shifter, Method for Operating the Same, Liquid Crystal Antenna, and Communication Apparatus

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19831317

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19831317

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205 DATED 31.05.2021.)