WO2020007043A1 - 液晶介电常数的测量装置、测量设备、测量方法 - Google Patents

液晶介电常数的测量装置、测量设备、测量方法 Download PDF

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Publication number
WO2020007043A1
WO2020007043A1 PCT/CN2019/074429 CN2019074429W WO2020007043A1 WO 2020007043 A1 WO2020007043 A1 WO 2020007043A1 CN 2019074429 W CN2019074429 W CN 2019074429W WO 2020007043 A1 WO2020007043 A1 WO 2020007043A1
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liquid crystal
dielectric constant
substrate
curve
measurement device
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PCT/CN2019/074429
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English (en)
French (fr)
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卢永春
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京东方科技集团股份有限公司
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Priority to US16/471,797 priority Critical patent/US11112440B2/en
Publication of WO2020007043A1 publication Critical patent/WO2020007043A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2617—Measuring dielectric properties, e.g. constants
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2617—Measuring dielectric properties, e.g. constants
    • G01R27/2623—Measuring-systems or electronic circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2617—Measuring dielectric properties, e.g. constants
    • G01R27/2682—Measuring dielectric properties, e.g. constants using optical methods or electron beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables

Definitions

  • the present disclosure relates to the technical field of liquid crystal devices, and in particular, to a liquid crystal dielectric constant measuring device, a measuring device, and a measuring method.
  • Terahertz is a unit of frequency.
  • One terahertz is equal to 10 12 hertz.
  • a terahertz wave is an electromagnetic wave with a frequency in the range of 0.1 to 10 terahertz.
  • Liquid crystal terahertz devices such as polarizers, phase shifters, wave plates, filters, etc.
  • An embodiment of the present disclosure provides a device for measuring a dielectric constant of a liquid crystal.
  • the device for measuring includes a first substrate and a second substrate opposite to each other;
  • a resonance structure layer disposed on a side of the first substrate facing the second substrate;
  • a cavity for accommodating the liquid crystal to be measured is defined between the first substrate and the second substrate.
  • the method further includes a first alignment film disposed on a side of the first substrate facing the second substrate, and a second alignment film disposed on a side of the second substrate facing the first substrate.
  • the resonance structure layer includes at least two groups of composite resonance structures, and each group of the composite resonance structures is spaced from each other; and each group of the composite resonance structures includes a spaced primary resonance structure and a slave resonance structure. .
  • the at least two sets of composite resonance structures are arranged at equal intervals around each other in a circumferential direction of an axis perpendicular to a plane on which the first substrate is located, and each group of the composite resonance structures is relatively The centers of the intersections of a substrate are symmetrically distributed.
  • the master resonance structure in each group of the composite resonance structures, includes a master metal strip, the slave resonance structure includes at least two slave metal strips, and the slave metal strips are perpendicular to the The main metal strip is arranged symmetrically with respect to a vertical bisector of the main metal strip.
  • the length of the slave metal strip is smaller than the length of the master metal strip, and the width of the slave metal strip is smaller than the width of the master metal strip.
  • the resonance structure layer includes four groups of composite resonance structures, the four groups of composite resonance structures are arranged at equal intervals along a circumferential direction perpendicular to the axis of the first substrate, and each group of the composite resonances The shortest distance between the structure and the axis is equal, or each group of the composite resonant structures is symmetrically distributed with respect to the center of the intersection of the axis and the first substrate; in each group of the composite resonant structures, the main resonant structure Including one main metal strip, the slave resonance structure includes two sub metal strips, the sub metal strip is perpendicular to the main metal strip, and the two metal strips are opposite to the main metal strip The vertical bisectors of the strips are arranged symmetrically; the slave metal strip is located on the side of the master metal strip remote from the axis.
  • a material of the resonance structure layer is metal.
  • the thickness of the resonance structure layer is 0.01 ⁇ m to 5 ⁇ m.
  • the thickness of the cavity is 3 ⁇ m to 500 ⁇ m.
  • the alignment directions of the first alignment film and the second alignment film are the same.
  • the first alignment film covers the resonant structure layer.
  • a frame is provided between the first substrate and the second substrate, and the frame cooperates with the first substrate and the second substrate to define a cavity for receiving a liquid crystal to be measured.
  • the frame is formed by a frame sealant, and the frame includes a liquid crystal injection port for injecting the liquid crystal to be tested into the cavity.
  • an embodiment of the present disclosure provides a method for measuring a dielectric constant of a liquid crystal.
  • the measuring method includes: preparing a measuring device including a liquid crystal to be measured, the measuring device being the liquid crystal dielectric according to the first aspect. Constant measuring device; using a terahertz electromagnetic wave to irradiate the measuring device in a direction perpendicular to the plane of the measuring device, and making the polarization direction of the terahertz electromagnetic wave parallel to the long axis of the liquid crystal in the measuring device, and receiving A terahertz electromagnetic wave of the measuring device is used to obtain a first curve of transmitted wave intensity as a function of frequency; the terahertz electromagnetic wave is used to irradiate the measuring device in a direction perpendicular to the plane of the measuring device, and the terahertz electromagnetic wave The polarization direction of is perpendicular to the long axis of the liquid crystal in the measuring device, and a terahertz electromagnetic wave transmitted through the measuring device is received to
  • the dielectric constant of the liquid crystal matched by a curve.
  • the dielectric constant is taken as the dielectric constant of the long axis direction of the liquid crystal, and is found based on the second curve.
  • Said liquid crystal match the dielectric constant of the second curve, and the dielectric constant as a dielectric constant of the liquid crystal minor axis direction.
  • a simulation method is used to find the dielectric constant of the liquid crystal matched by the first curve based on the first curve; a simulation method is used to find the dielectric constant of the liquid crystal matched by the second curve based on the second curve constant.
  • using a simulation method to find the dielectric constant in the long axis direction of the liquid crystal and the dielectric constant in the short axis direction of the liquid crystal includes: obtaining the first curve and the second curve according to Measure the experimental model corresponding to the step to establish a simulation model; adjust the dielectric constant of the long axis direction of the liquid crystal in the simulation model so that the obtained simulation result coincides with the first curve, and the corresponding long axis direction of the liquid crystal at this time
  • the dielectric constant of is the dielectric constant of the long axis direction of the liquid crystal to be measured; the dielectric constant of the short axis direction of the liquid crystal in the simulation model is adjusted so that the obtained simulation result is consistent with the second curve, which corresponds to this time
  • an embodiment of the present disclosure provides a liquid crystal dielectric constant measurement device.
  • the measurement device includes: the liquid crystal dielectric constant measurement device according to the first aspect; and the measurement device is disposed perpendicular to A terahertz electromagnetic wave source on one side in the direction of the plane of the measuring device; a signal receiver provided on the other side of the measuring device; a spectrum analyzer connected to the terahertz electromagnetic wave source and the signal receiver, The first curve and the second curve are used to generate the intensity of the transmitted wave according to the frequency according to the terahertz electromagnetic wave emitted by the terahertz electromagnetic wave source and the electromagnetic wave received by the signal receiver.
  • one of the terahertz electromagnetic wave source and the signal receiver is located on a side of the second substrate facing away from the first substrate, and the other is located on the first substrate facing away from the first substrate.
  • One side of the second substrate is located on a side of the second substrate facing away from the first substrate.
  • the measurement system further includes a processor connected to the spectrum analyzer for performing simulation and deduction to obtain a dielectric constant of the long-axis direction of the liquid crystal corresponding to the first curve and the dielectric constant.
  • FIG. 1 is a plan structural view of a measurement device according to an embodiment of the present disclosure
  • FIG. 2 is a sectional structural view of the measuring device shown in FIG. 1 along a dotted line aa ′;
  • FIG. 3 is a plan structural view of a resonance structure layer in a measurement device according to an embodiment of the present disclosure
  • FIG. 4 is a dimension design diagram of each component of the resonant structure layer in the measurement device according to the embodiment of the present disclosure
  • FIG. 6 is a specific flowchart of a step in a measurement method provided by an embodiment of the present disclosure
  • FIG. 7 is a schematic diagram of a measurement method provided by an embodiment of the present disclosure.
  • FIG. 8 is another schematic diagram of a measurement method provided by an embodiment of the present disclosure.
  • FIG. 9 is a diagram of a first curve and a second curve obtained in a measurement method provided by an embodiment of the present disclosure.
  • FIG. 10 is a schematic structural diagram of a measurement device according to an embodiment of the present disclosure.
  • liquid crystal is poured into a resonant cavity formed by a terahertz semi-permeable membrane, and then the cavity is illuminated with a terahertz wave. According to the cavity, The transmission characteristic determines its resonance frequency, and then inverses the dielectric constant of the liquid crystal infused therein.
  • the quality factor of the resonant cavity is relatively low, so the measurement sensitivity is low, and the measurement accuracy is low;
  • the measurement device consists of a terahertz semi-permeable membrane, an additional bias electrode, an alignment film, and a liquid crystal
  • the layer structure is composed of at least four parts, the structure is complicated, and the cost is high;
  • the thickness of the liquid crystal layer is very thick, and the biasing electrode and the alignment film are required to change the orientation of the liquid crystal molecules in the measurement process. In this case, the response speed of the liquid crystal is very slow. Therefore, the measurement time is long and the efficiency is low.
  • An embodiment of the present disclosure provides a device for measuring the dielectric constant of a liquid crystal.
  • the device includes: a first substrate 1 and a second substrate 2 opposite to each other; The substrate faces the resonance structure layer 5 on one side of the second substrate; wherein a cavity 8 is defined between the first substrate 1 and the second substrate 2 for containing a liquid crystal to be measured.
  • the resonant structure layer 5 can output a planar electric field when an electric signal is input, thereby controlling the orientation of the liquid crystal, so that the measurement device of this embodiment only needs to include one layer of the resonant structure layer 5 to realize the dielectric properties of the liquid crystal. Measurement of constants.
  • the resonant structure layer 5 may include at least two conductive electrodes or metal wires or metal blocks that are separated.
  • the shapes and arrangement of these conductive electrodes or metal wires or metal blocks may be various, and only at least two When the two electrodes are separated, a planar electric field is formed between the at least two electrodes.
  • the planar electric field can affect the orientation and arrangement of nearby liquid crystals.
  • the measurement device 100 includes: a first substrate 1 and a second substrate 2 opposite to each other; The resonance structure layer 5 and the first alignment film 3 on the side facing the second substrate 2; the second alignment film 4 provided on the side of the second substrate 2 facing the first substrate 1; wherein the first substrate and the first alignment film 3
  • the two substrates define a cavity 8 therebetween.
  • the resonance structure layer 5 is located on the side of the first substrate 1 facing the second substrate 2
  • the first alignment film 3 may also be located on the side of the first substrate 1 facing the second substrate 2.
  • the resonance structure layer 5 can be regarded as being located in the first alignment film 3. However, this is not necessary in other embodiments. It is not necessary to provide an alignment film.
  • the alignment film can further help the liquid crystal alignment and improve the liquid crystal alignment performance.
  • a frame 6 may be provided between the first substrate and the second substrate.
  • the frame 6 cooperates with the first substrate 1 and the second substrate 2 to define a cavity 8, and the cavity 8 is used to accommodate the measurement to be performed.
  • the function of the liquid crystal 200 and the frame 6 is to prevent the liquid crystal 200 from leaking, and to maintain a gap between the first substrate 1 and the second substrate 2, and provide a supporting space for the liquid crystal 200 placed between the first substrate 1 and the second substrate 2.
  • the liquid crystal 200 to be measured is injected into the cavity 8 between the first substrate 1 and the second substrate 2 of the measurement device 100. After the liquid crystal 200 is injected, the first alignment film 3 on the first substrate 1 and the second alignment film 4 on the second substrate 2 are in direct contact with the liquid crystal 200 to orient the molecules of the liquid crystal 200. You can then start taking measurements.
  • the plane determined by the measurement device 100 (which can also be regarded as the plane determined by the first substrate 1 or the second substrate 2) is an XOY plane;
  • the plane (ie, the XOY plane) and the direction from the first substrate 1 to the second substrate 2 is the Z direction.
  • a resonant structure layer is formed on one side of the second substrate.
  • the terahertz electromagnetic wave is used in the Z direction or the opposite direction of the Z direction when measuring. Irradiating the measuring device 100, the terahertz electromagnetic wave can be coupled with the resonance structure in the resonance structure layer 5 to generate resonance. At the same time, the anisotropic dielectric constant of the liquid crystal 200 will have different effects on the resonance generated.
  • This effect can The change curve of transmitted wave intensity with frequency transmitted through the measuring device 100 is reflected, so that the dielectric constant of the long axis direction and the dielectric constant of the short axis direction of the liquid crystal 200 can be obtained according to the change curve of the transmitted wave intensity with frequency.
  • the measurement of the dielectric constant of the liquid crystal 200 in the terahertz band is realized.
  • the above-mentioned measuring device 100 is used to measure the dielectric constant of the liquid crystal 200 in the terahertz frequency band.
  • the obtained transmission wave intensity versus frequency curve has a very obvious resonance peak, and the resonance is strong. This shows that the resonance structure in the resonance structure layer 5
  • the quality factor is extremely high, so the test device 100 has high sensitivity and high measurement accuracy.
  • the above-mentioned measurement device 100 does not need to make a bias electrode, and the resonance structure in the resonance structure layer 5 does not need to connect any signal lines and no ground electrode.
  • the operation of the resonant structure does not require the application of a control electric field at all, so the measurement device 100 has a simple structure and a low cost; in addition, the measurement process of the measurement device is very simple, and the liquid crystal 200 is not required to respond to the control electric field for deflection. Therefore, the measurement speed is fast and the efficiency is high.
  • the structural design of the resonance structure layer 5 has a very important influence on the accuracy and sensitivity of the measurement.
  • the resonance structure layer 5 may include at least two groups of composite resonance structures 50, and each group of composite resonance structures 50 is spaced apart to achieve mutual insulation, so that each group of composite resonance structures 50 can generate an incident terahertz electromagnetic wave Coupling generates resonance, and multiple sets of composite resonance structures 50 can affect each other to enhance resonance.
  • FIG. 3 includes four groups of composite resonant structures 50.
  • Each group of composite resonance structures 50 includes a master resonance structure 51 and a slave resonance structure 52 arranged at intervals.
  • the master resonance structure 51 and the slave resonance structure 52 are insulated from each other.
  • the main resonance structure 51 When the terahertz electromagnetic wave is incident, it will be coupled with the main resonance structure 51.
  • the main resonance structure 51 generates an induced electromagnetic field.
  • the induced electromagnetic field will generate an electromagnetic induction signal from the resonance structure 52, which in turn will affect the main resonance structure.
  • the incident terahertz electromagnetic wave will be coupled to both the master resonance structure 51 and the slave resonance structure 52; through the resonance between the master resonance structure 51 and the slave resonance structure 52 Mutual induction and coupling can improve the quality factor of resonance, which is conducive to enhancing the accuracy and sensitivity of the measurement.
  • four sets of composite resonance structures 50 of the resonance structure layer 5 may be arranged at equal intervals around a circumferential direction of an axis M (parallel to the Z direction) perpendicular to the plane where the first substrate 1 is located, and each group of the composite resonance structures
  • the shortest distances from 50 to the axis M are equal, in other words, the groups of the composite resonance structures 50 are symmetrically distributed with respect to the center of the intersection of the axis M and the first substrate.
  • the composite resonance structure 50 in the resonance structure layer 5 is arranged in a uniform and symmetrical form, which is beneficial to improving the quality factor.
  • the axis M shown in FIG. 3 is only one point.
  • the axis M can pass through the center of the measuring device, so that the composite resonance structure 50 is arranged in a uniform and symmetrical form with the center of the measuring device as a reference point, which is beneficial to improving the quality factor.
  • each group of composite resonance structures 50 the respective structures of the master resonance structure 51 and the slave resonance structure 52, and the relative positional relationship between the two are not limited to the one shown in FIG. 3, for example.
  • the main resonance structure 51 includes a main metal strip
  • the slave resonance structure 52 includes at least two slave metal strips, and the slave metal strips It is perpendicular to the main metal strip, and the slave metal strips are symmetrically arranged with respect to the vertical bisector of the main metal strip.
  • the length of the slave metal strip may be smaller than the length of the master metal strip
  • the width of the slave metal strip may be smaller than the width of the master metal strip, so that the master-slave relationship between the two is more obvious.
  • the resonant structure layer 5 includes four groups of composite resonant structures 50, which are respectively numbered a, b, c, and d.
  • Four groups of composite resonance structures a, b, c, and d are arranged at equal intervals around the circumference of an axis M (the axis M is perpendicular to the first substrate 1, that is, perpendicular to the XOY plane), and each group of composite resonance structures to the axis M The shortest distances are equal.
  • the master resonance structure 51 includes a master metal strip
  • the slave resonance structure 52 includes two slave metal strips, the slave metal strips are perpendicular to the master metal strips, and the two metal strips are opposite to the main
  • the vertical bisectors of the metal strips are arranged symmetrically; the secondary metal strips are located on the side of the main metal strips away from the axis M.
  • the shortest distance from each group of composite resonance structures to the axis M is equal, which means that the vertical distances from the main metal strips of each group of composite resonance structures to the axis M are equal, or the groups of composite resonance structures are symmetrically distributed with respect to the center of the axis M; composite resonance Structure a and composite resonance structure c are arranged symmetrically or mirror-symmetrically about axis M, and composite resonance structure b and composite resonance structure d are symmetrically arranged or mirror-symmetrically arranged about axis M.
  • one set of sides of the measurement device 100 is parallel to the X direction, and the other set of sides is parallel to the Y direction.
  • the main metal strip 51 of the composite resonance structure a and the composite resonance structure c in the resonance structure layer 5 of the measurement device 100 is parallel to the X direction, and the metal strip 52 is parallel to the Y direction; the main of the composite resonance structure b and the composite resonance structure d
  • the metal strip 51 is parallel to the Y direction, and the metal strip 52 is parallel to the X direction.
  • the composite resonance structures a, b, c, and d are arranged around the axis M, and the axis passes through the center of the first substrate 1.
  • the side length P of the orthographic projection of the liquid crystal layer 7 corresponding to the resonance structure layer 5 on the XOY plane may be in a range of 510 ⁇ m to 810 ⁇ m. For example, it may be 660 ⁇ m in one embodiment.
  • the distance D between the main metal strips 51 of the composite resonance structure a and the composite resonance structure c arranged in a mirror-symmetrical configuration may range from 110 ⁇ m to 310 ⁇ m, for example, it may be 210 ⁇ m in one embodiment.
  • the value of the distance D between the composite resonance structure b and the main metal strip 51 of the composite resonance structure d arranged in a mirror-symmetrical manner may also be in the range of 110 m to 310 m, for example, 210 m in one embodiment.
  • the length L1 of the main metal strip 51 can range from 78 ⁇ m to 178 ⁇ m, for example, in one embodiment, it can be 128 ⁇ m, and the value of the width W1 can be 25 ⁇ m to 75 ⁇ m, for example, 50 ⁇ m in one embodiment; the value of the length L2 from the metal strip 52 may be 50 ⁇ m to 150 ⁇ m, for example, 100 ⁇ m in one embodiment, and the value of the width W2 may be 15 ⁇ m to 45 ⁇ m, for example, 30 ⁇ m in one embodiment; the gap d between the master metal strip 51 and the slave metal strip 52 may range from 25 ⁇ m to 75 ⁇ m, for example, 50 ⁇ m in one embodiment; The distance S between the two secondary metal strips 52 can range from 15 ⁇ m to 45 ⁇ m, for example, 30 ⁇ m in one embodiment.
  • the material of the resonant structure layer 5 is a conductive material.
  • the material of the resonance structure layer 5 is a metal, for example, a metal such as gold, silver, copper, or aluminum.
  • the thickness of the resonance structure layer 5 can range from 0.01 ⁇ m to 5 ⁇ m, for example, it can be 1 ⁇ m in one embodiment.
  • the preparation process of the resonance structure layer 5 may include: firstly forming a whole layer of the film having a design thickness using the resonance structure material, and then removing a specific portion of the formed film by a photolithography process, and forming a remaining portion The required resonant structure.
  • the range of the thickness of the cavity 8 formed between the first substrate 1 and the second base 2 can also be considered as the range of the thickness of the injected liquid crystal layer 7 can be 3 ⁇ m to 500 ⁇ m. In the embodiment, it may be 50 ⁇ m.
  • the thickness of the first substrate 1 and the second substrate 2 can range from 100 ⁇ m to 1000 ⁇ m, for example, it can be 160 ⁇ m in one embodiment.
  • the value of the dielectric constant of the first substrate 1 and the second substrate 2 may be in the range of 1.1 to 20, for example, may be 3.8 in one embodiment.
  • the alignment directions of the first alignment film 3 and the second alignment film 4 may be the same, so that the liquid crystal to be measured has a uniform and uniform orientation after being injected into the cavity 8 of the measurement device 100.
  • the alignment direction of the first alignment film 3 and the second alignment film 4, that is, the orientation of the liquid crystal to be measured (the orientation described here refers specifically to the orientation of the long axis of the liquid crystal molecules) may be in the X direction, or in the Y direction, or In any other direction on the XOY plane.
  • the material of the frame 6 can be selected from frame sealant.
  • a liquid crystal injection port 9 (see FIGS. 1 and 2) may be provided on the frame 6.
  • the liquid crystal 200 to be measured is first passed through The liquid crystal injection port 9 is injected into the cavity 8, and then the measurement of the dielectric constant can be started.
  • the liquid crystal injection port 9 can be blocked by using a frame material (such as a frame sealant) to prevent the injected liquid crystal 200 from leaking during the measurement process.
  • the liquid crystal injection port 9 may be designed to be very small, so that the liquid crystal injection port 9 may not be blocked after the liquid crystal 200 is injected, and no leakage of liquid crystal may be caused.
  • liquid crystal dielectric constant measurement device 100 proposed in the present disclosure.
  • the method for measuring the dielectric constant of liquid crystals in the terahertz band using the above-mentioned liquid crystal dielectric constant measurement device 100 is described below.
  • a method for measuring the dielectric constant of a liquid crystal according to an embodiment of the present disclosure is described below with reference to FIG. 5, which includes the following steps.
  • a measurement device including a liquid crystal to be measured is prepared, and the measurement device is a measurement device of a dielectric constant of a liquid crystal according to an embodiment of the present disclosure.
  • the liquid crystal to be measured can be injected into the cavity 8 of the measuring device to complete the preparation work.
  • S21 Use a terahertz electromagnetic wave to irradiate the measuring device in a direction perpendicular to the plane of the measuring device, and make the polarization direction of the terahertz electromagnetic wave parallel to the long axis of the liquid crystal in the measuring device, and receive the terahertz electromagnetic wave passing through the measuring device to obtain transmission
  • the first curve of wave intensity as a function of frequency.
  • the orientation direction of the liquid crystal 200 (specifically, the orientation direction of the long axis) in the measurement device is parallel to the X direction
  • the liquid crystal 100 should be made
  • the long axis of is consistent with the polarization direction of the terahertz electromagnetic wave, and is parallel to the X direction.
  • the measurement device 100 is irradiated with a terahertz electromagnetic wave in the -Z direction.
  • the resonance of the first curve at the resonance peak is very strong and the quality factor is extremely high, which means that the test device 100 has extremely high accuracy.
  • the terahertz electromagnetic wave is used to irradiate the measuring device in a direction perpendicular to the plane of the measuring device, and the polarization direction of the terahertz electromagnetic wave is perpendicular to the long axis of the liquid crystal in the measuring device, and the transmission
  • the terahertz electromagnetic wave of the measurement device is used to obtain a second curve of transmitted wave intensity as a function of frequency.
  • the liquid crystal 100 when the measurement device 100 is placed, the liquid crystal 100 should be made
  • the long axis of is perpendicular to the polarization direction of the terahertz electromagnetic wave, so that the short axis of the liquid crystal 100 is consistent with the polarization direction of the terahertz electromagnetic wave, and both are parallel to the Y direction.
  • the measurement device 100 is irradiated with a terahertz electromagnetic wave in the -Z direction.
  • the dielectric constant of the short axis direction of the liquid crystal 100 will resonate.
  • a transmitted wave of a terahertz electromagnetic wave is received on the second substrate 2 side of the measurement device 100, and a second curve of the transmitted wave intensity as a function of frequency can be obtained. It can be seen from the second curve that there is a clear resonance peak near the horizontal axis at 542 GHz, which is caused by the dielectric constant of the short axis direction of the liquid crystal 100. It is worth mentioning that the resonance of the second curve at the resonance peak is very strong and the quality factor is extremely high, which means that the test device 100 has extremely high accuracy.
  • steps S21 and S22 are not limited in sequence when they are actually performed.
  • Step S21 may be performed first, and then step S22 may be performed.
  • step S22 it is not necessary to adjust the wave source used to transmit the terahertz electromagnetic wave.
  • the measurement device 100 For the position and the position of the signal receiver for receiving the transmitted wave of the terahertz electromagnetic wave, the measurement device 100 only needs to be rotated 90 ° on the XOY plane.
  • step S22 may be performed first, and then step S21 may be performed, and before step S21 is performed, there is no need to adjust the position of the wave source for transmitting the terahertz electromagnetic wave and the signal receiver for receiving the transmitted wave of the terahertz electromagnetic wave. Position, simply rotate the measuring device 100 by 90 ° on the XOY plane.
  • S31 Find the dielectric constant of the liquid crystal matched by the first curve based on the first curve, and use the dielectric constant as the dielectric constant of the long axis direction of the liquid crystal.
  • a simulation method is used to find the dielectric constant of the liquid crystal matched by the first curve based on the first curve, and the dielectric constant is used as the dielectric constant of the long axis direction of the liquid crystal.
  • the dielectric constant of the long axis direction of the liquid crystal is obtained by using a simulation method, which may specifically include the following process:
  • a simulation model is established according to a measurement experimental model corresponding to the steps of obtaining the first curve and the second curve.
  • the so-called "measurement experimental model corresponding to the steps of obtaining the first curve and the second curve” includes obtaining various parameters involved in the measurement using the measurement device 100, including the dimensions of each component and structure in the measurement device 100 Wait.
  • the thickness of the liquid crystal layer 7 in the measurement device 100 is 50 ⁇ m, and the thickness of the first substrate 1 and the second substrate 2 is 160 ⁇ m, the dielectric constant of the two is 3.8, and the thickness of the resonant structure layer 5 is 1 ⁇ m; the resonant structure in the resonant structure layer 5 adopts the structure shown in FIG. 3 and FIG. 4, and the size parameters are shown in Table 1 below:
  • the dielectric constant of the long axis direction of the liquid crystal in the simulation model is adjusted so that the obtained simulation result is consistent with the first curve.
  • the dielectric constant of the long axis direction of the corresponding liquid crystal is the long axis direction of the liquid crystal to be measured. Dielectric constant.
  • the initial dielectric constants of the long-axis direction and the short-axis direction of the liquid crystal need to be set first, and the simulation is performed in the simulation model; for example, the initial dielectric constant of the long-axis direction of the liquid crystal is set.
  • the dielectric constant is 3, the dielectric constant in the short axis direction is 2, and the liquid crystal is aligned in the X direction, so in the simulation model, the dielectric constant tensors of the liquid crystal in the X, Y, and Z directions are (3, 2, 2).
  • a corresponding change curve of transmitted wave intensity with frequency can be obtained, and this curve is compared with the first curve previously measured in step S21 to determine whether the two agree with each other. : If they do not match, it means that the set dielectric constant in the long axis direction of the liquid crystal is not suitable. Then adjust the dielectric constant in the long axis direction of the liquid crystal, and input the adjusted dielectric constant in the long axis direction of the liquid crystal into the simulation model. Perform the simulation again, and repeat the above judgment and adjustment operations until a simulation curve that matches the first curve is found.
  • the dielectric constant of the long axis direction of the liquid crystal corresponding to the simulation is the long axis direction of the liquid crystal measured in step S21.
  • S32 Find the dielectric constant of the liquid crystal matched by the second curve based on the second curve, and use the dielectric constant as the dielectric constant of the short axis direction of the liquid crystal.
  • a simulation method is used to find the dielectric constant of the liquid crystal matched by the second curve based on the second curve, and the dielectric constant is used as the dielectric constant of the long axis direction of the liquid crystal.
  • step S32 the dielectric constant of the short-axis direction of the liquid crystal is obtained by using a simulation method, which may specifically include the following process: based on the previously established simulation model, adjusting the simulation model
  • the dielectric constant of the short-axis direction of the liquid crystal makes the obtained simulation result coincide with the second curve.
  • the corresponding dielectric constant of the short-axis direction of the liquid crystal is the dielectric constant of the short-axis direction of the liquid crystal to be measured.
  • FIG. 6 input the initial set dielectric constants of the long axis direction and the short axis direction of the liquid crystal into the simulation model, and start the simulation.
  • the corresponding curve of the transmitted wave intensity with frequency can be obtained.
  • the second curve measured in step S22 is compared to determine whether they agree with each other: if they do not match, it means that the set dielectric constant of the short-axis direction of the liquid crystal is not appropriate, then adjust the dielectric of the short-axis direction of the liquid crystal Constant, input the adjusted dielectric constant of the short-axis direction of the liquid crystal into the simulation model, and perform the simulation again, repeat the above judgment and adjustment until a simulation curve that matches the second curve is found, then the liquid crystal corresponding to this simulation
  • the dielectric constant in the minor axis direction is the dielectric constant in the minor axis direction of the liquid crystal measured in step S22. If they match, it means that the dielectric constant of the short axis direction of the liquid crystal corresponding to this simulation is the dielectric constant of the short axis direction of the liquid crystal measured in step S22.
  • steps S31 and S32 are not limited in sequence when they are actually performed. Step S31 can be executed first, then step S32 can be executed, or step S32 can be executed first, and then step S31 can be executed.
  • the measurement method provided by the present disclosure can be applied to the measurement of the dielectric constant of the nematic liquid crystal in the terahertz wave band.
  • the embodiments of the present disclosure provide a liquid crystal dielectric constant measurement device.
  • the measurement device includes: a liquid crystal dielectric constant measurement device 100, A terahertz electromagnetic wave source 300, a signal receiver 400, and a spectrum analyzer 500.
  • the liquid crystal dielectric constant measurement device 100 is a liquid crystal dielectric constant measurement device 100 provided by the present disclosure, and has the advantages of high measurement sensitivity and accuracy, simple structure, low cost, and fast measurement speed.
  • the terahertz electromagnetic wave source 300 is disposed on one side of the measurement device 100.
  • the terahertz electromagnetic wave source 300 is disposed on the side of the first substrate 1 of the measurement device 100 facing away from the second substrate 2.
  • the terahertz electromagnetic wave source 300 is configured to emit a terahertz electromagnetic wave to the measuring device 100 in a direction perpendicular to the plane of the measuring device 100; for example, in FIG. 10, the terahertz electromagnetic wave source 300 emits a terahertz electromagnetic wave to the measuring device 100 in the -Z direction.
  • the signal receiver 400 is disposed on the other side of the measurement device 100.
  • the terahertz electromagnetic wave source 300 in FIG. 10 may also be disposed on a side of the second substrate 2 facing away from the first substrate 1 of the measurement device 100.
  • the signal receiver 400 is configured to receive a terahertz electromagnetic wave transmitted from the measurement device 100.
  • the spectrum analyzer 500 is connected to the terahertz electromagnetic wave source 300 and the signal receiver 400, and is configured to generate a curve of transmitted wave intensity changing with frequency according to the terahertz electromagnetic wave emitted by the terahertz electromagnetic wave source 300 and the electromagnetic wave received by the signal receiver 400.
  • the spectrum analyzer 500 may specifically be a time-domain spectrum analyzer.
  • the measurement device may further include a processor 600, which is connected to the spectrum analyzer 500 and configured to execute the liquid crystal dielectric constant provided by the present disclosure.
  • Steps S31 and S32 in the measurement method that is, they can be simulated and derived to obtain the dielectric constant of the long-axis direction of the liquid crystal corresponding to the first curve and the dielectric constant of the short-axis direction of the liquid crystal corresponding to the second curve. .

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Abstract

本公开提供了一种液晶介电常数的测量装置、测量设备、测量方法。其中所述测量装置包括：相对设置的第一基板和第二基板；依次设置于第一基板朝向第二基板一面上的谐振结构层及第一配向膜；设置于第二基板朝向第一基板一面上的第二配向膜；设置于第一基板和第二基板之间的边框，边框配合第一基板和第二基板形成用于容纳待测量的液晶的空腔。上述测量装置应用于对液晶在太赫兹波频段的介电常数的测量中。

Description

液晶介电常数的测量装置、测量设备、测量方法
相关申请的交叉引用
本申请要求于2018年7月2日提交的、名称为“液晶介电常数的测量装置、测量系统、测量方法”的中国专利申请No.201810710418.X的优先权，该专利申请的公开内容通过引用方式整体并入本文。
技术领域
本公开涉及液晶器件技术领域，尤其涉及一种液晶介电常数的测量装置、测量设备、测量方法。
背景技术
太赫兹(Terahertz，简称THz)是频率单位，1太赫兹等于10 12赫兹，太赫兹波是指频率在0.1～10太赫兹范围的电磁波。近年来，液晶材料在太赫兹频段的应用越来越广泛，液晶太赫兹器件(例如，偏振片、相移器、波片、滤波器等)能方便地通过改变外电场或外磁场实现调谐功能，并且具有易低压调制、功耗低等优点。
对液晶材料在太赫兹频段的介电常数进行精确测量是液晶太赫兹器件设计与分析的关键。
发明内容
本公开的实施例提供了一种液晶介电常数的测量装置，所述测量装置包括：相对设置的第一基板和第二基板；
设置于所述第一基板朝向所述第二基板一面上的谐振结构层；
其中，在第一基板和第二基板之间限定有用于容纳待测量的液晶的空腔。
在一个实施例中，还包括设置于所述第一基板朝向所述第二基板一面上的第一配向膜和设置于所述第二基板朝向所述第一基板一面上的第二配向膜。
在一个实施例中，所述谐振结构层包括至少两组复合谐振结构，各组所述复合谐振结构彼此间隔设置；并且，每组所述复合谐振结构包括间隔设置的主谐振结构和从谐振结构。
在一个实施例中，所述至少两组复合谐振结构围绕一垂直于所述第一基板所在平面的轴线的周向彼此等间隔设置，且各组所述复合谐振结构相对于所述轴线与第一基板的交点中心对称地分布。
在一个实施例中，每组所述复合谐振结构中，所述主谐振结构包括一条主金属带条，所述从谐振结构包括至少两条从金属带条，所述从金属带条垂直于所述主金属带条，且所述至少两条从金属带条相对于所述主金属带条的垂直平分线对称布置。
在一个实施例中，所述从金属带条的长度小于所述主金属带条的长度，所述从金属带条的宽度小于所述主金属带条的宽度。
在一个实施例中，所述谐振结构层包括四组复合谐振结构，所述四组复合谐振结构沿一垂直于所述第一基板的轴线的周向等间隔设置，且各组所述复合谐振结构到所述轴线的最短距离相等，或者说，各组所述复合谐振结构相对于所述轴线与第一基板的交点中心对称地分布；每组所述复合谐振结构中，所述主谐振结构包括一条主金属带条，所述从谐振结构包括两条从金属带条，所述从金属带条垂直于所述主金属带条，且所述两条金属带条相对于所述主金属带条的垂直平分线对称布置；所述从金属带条位于所述主金属带条的远离所述轴线的一侧。
在一个实施例中，所述谐振结构层的材料为金属。
在一个实施例中，所述谐振结构层的厚度为0.01μm～5μm。
在一个实施例中，所述空腔的厚度为3μm～500μm。
在一个实施例中，所述第一配向膜和所述第二配向膜的配向方向一致。
在一个实施例中，第一配向膜覆盖谐振结构层。
在一个实施例中，在所述第一基板和所述第二基板之间设置边框，所述边框配合所述第一基板和所述第二基板限定用于容纳待测量的液晶的空腔。
在一个实施例中，边框由封框胶形成，并且边框包括液晶注入口用于将待 测液晶注入所述空腔。
一方面，本公开的实施例提供了一种液晶介电常数的测量方法，所述测量方法包括：准备包含待测量液晶的测量装置，所述测量装置为如第一方面所述的液晶介电常数的测量装置；使用太赫兹电磁波沿垂直于所述测量装置平面的方向照射所述测量装置，且使所述太赫兹电磁波的极化方向与所述测量装置中液晶的长轴相平行，接收透过所述测量装置的太赫兹电磁波，获得透射波强度随频率变化的第一曲线；使用太赫兹电磁波沿垂直于所述测量装置平面的方向照射所述测量装置，且使所述太赫兹电磁波的极化方向与所述测量装置中液晶的长轴相垂直，接收透过所述测量装置的太赫兹电磁波，获得透射波强度随频率变化的第二曲线；基于第一曲线找出所述第一曲线所匹配的液晶介电常数，将该介电常数作为液晶长轴方向的介电常数，并基于第二曲线找出所述第二曲线所匹配的液晶介电常数，将该介电常数作为液晶短轴方向的介电常数。
在一个实施例中，采用模拟仿真方法基于第一曲线找出所述第一曲线所匹配的液晶介电常数；采用模拟仿真方法基于第二曲线找出所述第二曲线所匹配的液晶介电常数。在一个实施例中，采用模拟仿真方法找出所述液晶长轴方向的介电常数和所述液晶短轴方向的介电常数的步骤包括：根据获取所述第一曲线和所述第二曲线的步骤对应的测量实验模型，建立仿真模型；调整所述仿真模型中的液晶长轴方向的介电常数，使得到的仿真结果与所述第一曲线相吻合，此时对应的液晶长轴方向的介电常数即为待测量液晶长轴方向的介电常数；调整所述仿真模型中的液晶短轴方向的介电常数，使得到的仿真结果与所述第二曲线相吻合，此时对应的液晶短轴方向的介电常数即为待测量液晶短轴方向的介电常数。
一方面，本公开的实施例提供了一种液晶介电常数的测量设备，所述测量设备包括：如第一方面所述的液晶介电常数的测量装置；设置于所述测量装置在垂直于所述测量装置平面的方向上的一侧的太赫兹电磁波源；设置于所述测量装置另一侧的信号接收器；与所述太赫兹电磁波源和所述信号接收器相连的频谱分析仪，用于根据太赫兹电磁波源所发射的太赫兹电磁波与所述信号接收器所接收的电磁波生成透射波强度随频率变化的第一曲线和第二曲线。
在一个实施例中，所述太赫兹电磁波源和信号接收器中的一者位于所述第二基板背对所述第一基板的一侧，另一者位于所述第一基板背对所述第二基板的一侧。。
在一个实施例中，所述测量系统还包括：与所述频谱分析仪相连的处理器，用于进行仿真推演，获得所述第一曲线所对应的液晶长轴方向的介电常数和所述第二曲线所对应的液晶短轴方向的介电常数。
附图说明
为了更清楚地说明本公开实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1为本公开实施例所提供的测量装置的平面结构图；
图2为图1所示出的测量装置沿虚线aa′的截面结构图；
图3为本公开实施例所提供的测量装置中谐振结构层的平面结构图；
图4为本公开实施例所提供的测量装置中谐振结构层的各部件尺寸设计图；
图5为本公开实施例所提供的测量方法的基本流程图；
图6为本公开实施例所提供的测量方法中某一步骤的具体流程图；
图7为本公开实施例所提供的测量方法的一种示意图；
图8为本公开实施例所提供的测量方法的另一种示意图；
图9为本公开实施例所提供的测量方法中得到的第一曲线和第二曲线的图；
图10为本公开实施例所提供的测量设备的结构示意图。
具体实施方式
为使本公开的上述目的、特征和优点能够更加明显易懂，下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于 本公开中的实施例，本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其它实施例，均属于本公开保护的范围。
对于液晶材料在太赫兹频段的介电常数的测量，相关技术中通过将液晶灌注到一个由太赫兹半透膜构成的谐振腔体中，之后利用太赫兹波照射该腔体，根据该腔体的透射特性确定其谐振频率，继而反推其中灌注的液晶的介电常数。上述测量方法存在许多不足，例如(1)谐振腔的品质因数比较低，因此测量灵敏度低、测量精度低；(2)测量装置由太赫兹半透膜、额外的偏置电极、配向膜、液晶层结构至少四部分构成，结构复杂，成本高；(3)液晶层厚度很厚，并且测量过程中需要利用偏置电极和配向膜改变液晶分子指向，在种情况下液晶的反应速度很慢，因此测量时间很长，效率低下等。
本公开的实施例提出了一种液晶介电常数的测量装置，参考图1和图2，所述测量装置包括：相对设置的第一基板1和第二基板2；和设置于所述第一基板朝向所述第二基板一面上的谐振结构层5；其中，在第一基板1和第二基板2之间限定有用于容纳待测量的液晶的空腔8。在本实施例中，谐振结构层5能够在输入电信号的时候输出平面电场，从而控制液晶的取向，从而本实施例的测量装置仅需包括一层谐振结构层5即可以实现对液晶介电常数的测量。在本实施例中，谐振结构层5可以包括分离的至少两个导电电极或金属线或金属块，这些导电电极或金属线或金属块的形状和布置方式可以是多种多样，只需要至少两个电极是分离的则在至少两个电极之间构成平面电场，平面电场可以影响附近的液晶的取向和排布。
本公开的实施例提出了一种液晶介电常数的测量装置，如图1和图2所示，测量装置100包括：相对设置的第一基板1和第二基板2；设置于第一基板1朝向第二基板2一面上的谐振结构层5及第一配向膜3；设置于第二基板2朝向第一基板1一面上的第二配向膜4；其中，所述第一基板和所述第二基板限定位于两者之间的空腔8。在本实施例中，例如如图2所示，谐振结构层5位于第一基板1朝向第二基板2一面上，同时第一配向膜3也可以位于第一基板1朝向第二基板2一面上，谐振结构层5可以看作位于第一配向膜3内。然而，在其他实施例中，并不必需如此。设置配向膜并不是必需的，然而，设置配向膜可以 进一步帮助液晶取向，改善液晶取向的性能。
在一个实施例中，所述第一基板和所述第二基板之间可以设置边框6，边框6配合第一基板1和第二基板2限定空腔8，该空腔8用以容纳待测量的液晶200，边框6的作用为防止液晶200泄露，且维持第一基板1和第二基板2之间的间隙，为置于第一基板1和第二基板2之间的液晶200提供支撑空间。当使用上述测量装置100对液晶的介电常数进行测量时，将待测量的液晶200注入测量装置100的第一基板1与第二基板2之间的空腔8内。液晶200注入后，第一基板1上的第一配向膜3和第二基板2上的第二配向膜4与液晶200直接接触，对液晶200分子的指向进行配向。之后即可开始进行测量。
需要说明的是，本公开的实施例中，测量装置100所确定的平面(也可以视为第一基板1或第二基板2所确定的平面)为XOY平面；垂直于测量装置100所确定的平面(即XOY平面)且由第一基板1指向第二基板2的方向为Z方向。
上述液晶介电常数的测量装置中，在第二基板的一面形成有谐振结构层，当将待测量的液晶注入该测量装置中，测量时，采用太赫兹电磁波沿Z方向或Z方向的反方向照射该测量装置100，太赫兹电磁波能够与谐振结构层5中的谐振结构发生耦合，产生谐振，同时液晶200各向异性的介电常数会对所产生的谐振产生不同的影响，这种影响能够通过透射出测量装置100的透射波强度随频率的变化曲线反映出来，从而根据该透射波强度随频率的变化曲线能够得出液晶200长轴方向的介电常数和短轴方向的介电常数，实现了对液晶200在太赫兹频段的介电常数的测量。
利用上述测量装置100测量液晶200在太赫兹频段的介电常数，所得到的透射波强度随频率的变化曲线具有非常明显的谐振尖峰，谐振很强，这说明谐振结构层5中的谐振结构的品质因数极高，因此该测试装置100的灵敏度高，测量精度高；并且，上述测量装置100不需要制作偏置电极，谐振结构层5中的谐振结构无需连接任何信号线，没有任何接地电极，也就是说谐振结构的工作是完全不需要施加控制电场的，因此上述测量装置100的结构简单，造价低廉；此外，上述测量装置进行测量的过程十分简单，不需要液晶200响应控制电场进行偏转，因此测量速度快，效率高。
在上述测量装置100中，谐振结构层5的结构设计对于测量的精度和灵敏度的影响十分重要，下面示例性的给出一些可能的设计的实施例。
请参见图3，谐振结构层5可包括至少两组复合谐振结构50，各组复合谐振结构50间隔设置，以实现相互绝缘，从而使每组复合谐振结构50均能够与入射的太赫兹电磁波发生耦合，产生谐振，并且多组复合谐振结构50之间可相互影响，增强谐振。
例如，图3中包括四组复合谐振结构50。每组复合谐振结构50包括间隔设置的主谐振结构51和从谐振结构52，主谐振结构51和从谐振结构52之间相互绝缘。当太赫兹电磁波入射后，会与主谐振结构51发生耦合，主谐振结构51产生感应电磁场，该感应电磁场会使从谐振结构52产生电磁感应信号，该电磁感应信号又会反过来影响主谐振结构上的感应电磁场；并且，在某些情况下，入射的太赫兹电磁波会既与主谐振结构51发生耦合，又与从谐振结构52发生耦合；通过主谐振结构51和从谐振结构52之间的相互感应和耦合，可以提高谐振的品质因数，有利于增强测量的精度和灵敏度。
请继续参见图3，谐振结构层5的四组复合谐振结构50可围绕一垂直于第一基板1所在平面的轴线M(平行于Z方向)的周向等间隔设置，且各组复合谐振结构50到轴线M的最短距离相等，换句话说，各组所述复合谐振结构50相对于所述轴线M与第一基板的交点中心对称地分布。这样使得谐振结构层5中复合谐振结构50呈均匀、对称的形式布置，有利于提高品质因数。需要说明的是，由于轴线M垂直于XOY平面，因此图3中所示出的轴线M仅为一点。
根据本公开的实施例，对于规则形状的测量装置，轴线M可过测量装置的中心，这样复合谐振结构50以测量装置的中心为参考点呈均匀、对称的形式布置，有利于提高品质因数。
每组复合谐振结构50中，主谐振结构51和从谐振结构52各自的结构，及二者之间的相对位置关系不局限于例如图3示出的这一种。作为一种可能的实施例，如图3所示，每组复合谐振结构50中，主谐振结构51包括一条主金属带条，从谐振结构52包括至少两条从金属带条，从金属带条垂直于主金属带条，且从金属带条相对于主金属带条的垂直平分线对称地布置。进一步的，从金属 带条的长度可小于主金属带条的长度，从金属带条的宽度可小于主金属带条的宽度，以使二者之间的主从关系更加明显。
下面给出一种具体的示例，请再次参见图3，谐振结构层5包括四组复合谐振结构50，分别编号为a、b、c、d。四组复合谐振结构a、b、c、d围绕一轴线M(该轴线M垂直于第一基板1，即垂直于XOY平面)的周向等间隔设置，且各组复合谐振结构到轴线M的最短距离相等。每组复合谐振结构中，主谐振结构51包括一条主金属带条，从谐振结构52包括两条从金属带条，从金属带条垂直于主金属带条，且两条金属带条相对于主金属带条的垂直平分线对称布置；从金属带条位于主金属带条的远离轴线M的一侧。各组复合谐振结构到轴线M的最短距离相等，意味着各组复合谐振结构的主金属带条到轴线M的垂直距离相等，或各组复合谐振结构相对于轴线M中心对称地分布；复合谐振结构a与复合谐振结构c关于轴线M对称布置或呈镜像对称布置，复合谐振结构b与复合谐振结构d关于轴线M对称布置或呈镜像对称布置。通过上述结构设计，可以使谐振结构层5的谐振结构达到很高的品质因数。
对于上述谐振结构层5的各项尺寸设计，不同尺寸规格的测量装置应有不同的尺寸设计方案。
在一个实施例中，测量装置100的一组边平行于X方向，另一组边平行于Y方向。测量装置100的谐振结构层5中复合谐振结构a与复合谐振结构c的主金属带条51平行于X方向，从金属带条52平行于Y方向；复合谐振结构b与复合谐振结构d的主金属带条51平行于Y方向，从金属带条52平行于X方向。复合谐振结构a、b、c、d围绕轴线M布置，轴线过第一基板1的中心。
请参见图4，根据本公开的实施例的谐振结构层5所对应的液晶层7在XOY平面上的正投影的边长P的取值范围可为510μm～810μm。例如在一个实施例中可以为660μm。
呈镜像对称布置的复合谐振结构a与复合谐振结构c的主金属带条51之间的间距D的取值范围可为110μm～310μm，例如在一个实施例中可以为210μm。同样的，呈镜像对称布置的复合谐振结构b与复合谐振结构d的主金属带条51之间的间距D的取值范围也可为110μm～310μm，例如在一个实施例中可以 为210μm。
根据本公开的实施例，每个复合谐振结构中，主金属带条51的长度L1的取值范围可为78μm～178μm，例如在一个实施例中可以为128μm，宽度W1的取值范围可为25μm～75μm，例如在一个实施例中可以为50μm；从金属带条52的长度L2的取值范围可为50μm～150μm，例如在一个实施例中可以为100μm，宽度W2的取值范围可为15μm～45μm，例如在一个实施例中可以为30μm；主金属带条51与从金属带条52之间的间隙d的取值范围可为25μm～75μm，例如在一个实施例中可以为50μm；两条从金属带条52之间的间距S的取值范围可为15μm～45μm，例如在一个实施例中可以为30μm。
本实施例中，谐振结构层5的材料为导电材料。例如在一个实施例中，谐振结构层5的材料为金属，例如：金、银、铜、铝等金属。
谐振结构层5的厚度的取值范围可为0.01μm～5μm，例如在一个实施例中可以为1μm。
在一个实施例中，谐振结构层5的制备过程可包括：首先采用谐振结构材料形成具有设计厚度的一整层的薄膜，然后采用光刻工艺去除所形成的薄膜中的特定部分，保留部分形成所需要的谐振结构。
第一基板1与第二基本2之间所形成的空腔8的厚的取值范围度，也可视为所注入的液晶层7的厚度的取值范围可为3μm～500μm，例如在一个实施例中可以为50μm。
第一基板1和第二基板2的厚度的取值范围可为100μm～1000μm，例如在一个实施例中可以为160μm。第一基板1和第二基板2的介电常数的取值范围可为1.1～20，例如在一个实施例中可以为3.8。
第一配向膜3和第二配向膜4的配向方向可一致，以使得待测量液晶在注入到测量装置100的空腔8中后具有均匀一致的取向。第一配向膜3和第二配向膜4的配向方向，也即待测量液晶的取向(此处所述的取向特指液晶分子长轴的指向)，可沿X方向，或沿Y方向，或沿XOY平面上的其它任一方向。
边框6的材料可以选用封框胶。在一些实施例中，可在边框6上设置一液晶注入口9(参见图1和图2)，当使用上述测量装置100对液晶的介电常数进 行测量时，首先将待测量的液晶200通过该液晶注入口9注入上述空腔8中，继而可开始介电常数的测量工作。需要说明的是，在注入液晶200后，可采用边框材料(诸如封框胶)将液晶注入口9进行封堵，以防止所注入的液晶200在测量过程中泄露。在一些实施例中，液晶注入口9可以设计的很小，这样在注入液晶200后可以不对液晶注入口9封堵，也不会引起液晶的泄露。
以上是对本公开所提出的液晶介电常数的测量装置100的结构的介绍，下面对采用上述液晶介电常数的测量装置100对液晶在太赫兹频段的介电常数的测量方法进行介绍。
下面参照图5，描述根据本公开的实施例的液晶介电常数的测量方法，包括如下步骤。
S1：准备包含待测量液晶的测量装置，该测量装置为如本公开实施例所述的液晶介电常数的测量装置。
在上述步骤中，可将待测量的液晶注入测量装置的空腔8中，完成准备工作。
S21：使用太赫兹电磁波沿垂直于测量装置平面的方向照射测量装置，且使太赫兹电磁波的极化方向与测量装置中液晶的长轴相平行，接收透过测量装置的太赫兹电磁波，获得透射波强度随频率变化的第一曲线。
在上述步骤中，示例性的，如图8所示，假设测量装置中液晶200的取向方向(特指长轴的取向方向)平行于X方向，则在放置测量装置100时，应使液晶100的长轴与太赫兹电磁波的极化方向相一致，均平行于X方向。使用太赫兹电磁波沿-Z方向照射测量装置100。
当入射太赫兹电磁波与测量装置100中的谐振结构发生耦合，产生谐振时，由于液晶100的长轴与太赫兹电磁波的极化方向相一致，因此液晶100长轴方向的介电常数会对谐振产生影响。参见图9，在测量装置100的第二基板2一侧接收到太赫兹电磁波的透射波，可得到透射波强度随频率变化的第一曲线。需要说明的是，图9中纵轴以传输系数表征透射波强度。从第一曲线中可以看出，在横轴568GHz附近有个明显的谐振尖峰，这是由于液晶100长轴方向的介电常数引起的。值得一提的是，第一曲线在谐振尖峰处的谐振很强，品质因数极高， 这意味着该测试装置100具有极高的精准性。
S22：使用太赫兹电磁波沿垂直于所述测量装置平面的方向照射所述测量装置，且使所述太赫兹电磁波的极化方向与所述测量装置中液晶的长轴相垂直，接收透过所述测量装置的太赫兹电磁波，获得透射波强度随频率变化的第二曲线。
在上述步骤中，示例性的，如图7所示，假设测量装置中液晶200的取向方向(特指长轴的取向方向)平行于X方向，则在放置测量装置100时，应使液晶100的长轴与太赫兹电磁波的极化方向相垂直，以使液晶100的短轴与太赫兹电磁波的极化方向相一致，均平行于Y方向。使用太赫兹电磁波沿-Z方向照射测量装置100。
当入射太赫兹电磁波与测量装置100中的谐振结构发生耦合，产生谐振时，由于液晶100的短轴与太赫兹电磁波的极化方向相一致，因此液晶100短轴方向的介电常数会对谐振产生影响。请参见图9，在测量装置100的第二基板2一侧接收到太赫兹电磁波的透射波，可得到透射波强度随频率变化的第二曲线。从第二曲线中可以看出，在横轴542GHz附近有个明显的谐振尖峰，这是由于液晶100短轴方向的介电常数引起的。值得一提的是，第二曲线在谐振尖峰处的谐振很强，品质因数极高，这意味着该测试装置100具有极高的精准性。
需要说明的是，上述步骤S21与S22在实际执行时并不限定先后次序，可以先执行步骤S21，再执行步骤S22，并且，在执行步骤S22前，无需调整用于发射太赫兹电磁波的波源的位置和用于接收太赫兹电磁波的透射波的信号接收器的位置，仅需将测量装置100在XOY平面上旋转90°即可。相类似的，可以先执行步骤S22，再执行步骤S21，并且，在执行步骤S21前，无需调整用于发射太赫兹电磁波的波源的位置和用于接收太赫兹电磁波的透射波的信号接收器的位置，仅需将测量装置100在XOY平面上旋转90°即可。
S31：基于所述第一曲线找出所述第一曲线所匹配的液晶介电常数，将该介电常数作为液晶长轴方向的介电常数。有多种方法能够基于第一曲线得出所述第一曲线所匹配的液晶介电常数。根据本公开的一个实施例，采用模拟仿真方法基于所述第一曲线找出所述第一曲线所匹配的液晶介电常数，将该介电常数 作为液晶长轴方向的介电常数。
请参见图6，在上述步骤S31中，采用模拟仿真方法获取液晶长轴方向的介电常数，具体可包括如下过程：
首先，根据获取所述第一曲线和所述第二曲线的步骤对应的测量实验模型，建立仿真模型。所谓的“获取所述第一曲线和所述第二曲线的步骤对应的测量实验模型”包括获取采用测量装置100进行测量时所涉及的各种参数，包括测量装置100中各部件和结构的尺寸等。示例性的，“获取所述第一曲线和所述第二曲线的步骤对应的测量实验模型”中，测量装置100中液晶层7厚度为50μm，第一基板1和第二基板2的厚度为160μm，二者的介电常数为3.8，谐振结构层5的厚度为1μm；谐振结构层5中的谐振结构采用如图3和图4所示的结构，各项尺寸参数如下表1所示：
表1(单位：μm)
S P L1 L2 W1 W2 D d
30 660 128 100 50 30 210 50
建立仿真模型时，参照上述参数进行建立。
然后，调整仿真模型中的液晶长轴方向的介电常数，使得到的仿真结果与所述第一曲线相吻合，此时对应的液晶长轴方向的介电常数即为待测量液晶长轴方向的介电常数。继续参见图6，在此过程中，需要首先设定初始的液晶长轴方向和短轴方向介电常数，输入仿真模型中进行模拟仿真；示例性的，设定初始的液晶长轴方向的介电常数为3，短轴方向的介电常数为2，液晶沿X方向配向，所以在仿真模型中，液晶在X、Y、Z三个方向的介电常数张量分别为(3，2，2)。
初始的液晶介电常数输入后，经过仿真模拟，可得到对应的透射波强度随频率的变化曲线，将此曲线与先前在步骤S21中测量得到的第一曲线进行比对，判断二者是否吻合：若不吻合，则说明所设定的液晶长轴方向的介电常数不合适，则调整液晶长轴方向的介电常数，将调整后的液晶长轴方向的介电常数输入仿真模型中，再次进行仿真模拟，重复上述判断及调整的动作，直至找到与 第一曲线吻合的仿真曲线，则该次仿真对应的液晶长轴方向的介电常数即为步骤S21中所测量的液晶长轴方向的介电常数。若吻合，则说明本次仿真对应的液晶长轴方向的介电常数即为步骤S21中所测量的液晶长轴方向的介电常数。
S32：基于第二曲线找出所述第二曲线所匹配的液晶介电常数，将该介电常数作为液晶短轴方向的介电常数。有多种方法能够基于第二曲线得出所述第二曲线所匹配的液晶介电常数。根据本公开的一个实施例，采用模拟仿真方法基于所述第二曲线找出所述第二曲线所匹配的液晶介电常数，将该介电常数作为液晶长轴方向的介电常数。
请参见图6，参考上述步骤S31的具体介绍，上述步骤S32中，采用模拟仿真方法获取液晶短轴方向的介电常数，具体可包括如下过程：基于先前所建立的仿真模型，调整仿真模型中的液晶短轴方向的介电常数，使得到的仿真结果与所述第二曲线相吻合，此时对应的液晶短轴方向的介电常数即为待测量液晶短轴方向的介电常数。请继续参见图6，向仿真模型中输入初始设定的液晶长轴方向和短轴方向的介电常数，开始模拟仿真，可得到对应的透射波强度随频率的变化曲线，将此曲线与先前在步骤S22中测量得到的第二曲线进行比对，判断二者是否吻合：若不吻合，则说明所设定的液晶短轴方向的介电常数不合适，则调整液晶短轴方向的介电常数，将调整后的液晶短轴方向的介电常数输入仿真模型中，再次进行仿真模拟，重复上述判断及调整的动作，直至找到与第二曲线吻合的仿真曲线，则该次仿真对应的液晶短轴方向的介电常数即为步骤S22中所测量的液晶短轴方向的介电常数。若吻合，则说明本次仿真对应的液晶短轴方向的介电常数即为步骤S22中所测量的液晶短轴方向的介电常数。
需要说明的是，上述步骤S31和S32在实际执行时并不限定先后次序，可以先执行步骤S31，再执行步骤S32，或者，先执行步骤S32，再执行步骤S31。
此外，本公开所提供的测量方法可适用于向列相液晶在太赫兹波频段的介电常数的测量。
基于上述液晶介电常数的测量装置及测量方法，本公开的实施例提供了一种液晶介电常数的测量设备，如图10所示，该测量设备包括：液晶介电常数的测量装置100、太赫兹电磁波源300、信号接收器400、及频谱分析仪500。
其中，液晶介电常数的测量装置100为如本公开所提供的液晶介电常数的测量装置100，具有测量灵敏度和精准度高、结构简单、成本低、测量速度快的优点。
太赫兹电磁波源300设置于测量装置100的一侧；示例性的，图10中太赫兹电磁波源300设置于测量装置100的第一基板1背向第二基板2的一侧。太赫兹电磁波源300用于沿垂直于测量装置100平面的方向向测量装置100发射太赫兹电磁波；示例性的，图10中太赫兹电磁波源300沿-Z方向向测量装置100发射太赫兹电磁波。
信号接收器400设置于测量装置100的另一侧；示例性的，图10中太赫兹电磁波源300也可以设置于测量装置100的第二基板2背向第一基板1的一侧。信号接收器400用于接收从测量装置100透射出的太赫兹电磁波。
频谱分析仪500与太赫兹电磁波源300和信号接收器400相连，用于根据太赫兹电磁波源300所发射的太赫兹电磁波与信号接收器400所接收的电磁波生成透射波强度随频率变化的曲线。示例性的，若太赫兹电磁波源300所发射的太赫兹电磁波为时域信号，则频谱分析仪500具体可为时域谱分析仪。
基于上述测量设备，进一步的，请继续参见图10，该测量设备还可包括处理器600，该处理器600与频谱分析仪500相连，其配置为执行如本公开所提供的液晶介电常数的测量方法中的步骤S31和S32，即其能够进行仿真推演，获得所述第一曲线所对应的液晶长轴方向的介电常数和所述第二曲线所对应的液晶短轴方向的介电常数。
以上所述仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (20)

  1. 一种液晶介电常数的测量装置，其中，所述测量装置包括：
    相对设置的第一基板和第二基板；和
    设置于所述第一基板朝向所述第二基板一面上的谐振结构层；
    其中，在第一基板和第二基板之间限定有用于容纳待测量的液晶的空腔。
  2. 根据权利要求1所述的测量装置，还包括设置于所述第一基板朝向所述第二基板一面上的第一配向膜和设置于所述第二基板朝向所述第一基板一面上的第二配向膜。
  3. 根据权利要求1所述的测量装置，其中，所述谐振结构层包括至少两组复合谐振结构，各组所述复合谐振结构彼此间隔设置；并且，每组所述复合谐振结构包括间隔设置的主谐振结构和从谐振结构。
  4. 根据权利要求3所述的测量装置，其中，所述至少两组复合谐振结构围绕一垂直于所述第一基板所在平面的轴线的周向彼此等间隔设置，且各组所述复合谐振结构相对于所述轴线与第一基板的交点中心对称地分布。
  5. 根据权利要求3所述的测量装置，其中，每组所述复合谐振结构中，所述主谐振结构包括一条主金属带条，所述从谐振结构包括至少两条从金属带条，所述从金属带条垂直于所述主金属带条，且所述至少两条从金属带条相对于所述主金属带条的垂直平分线对称布置。
  6. 根据权利要求5所述的测量装置，其中，所述从金属带条的长度小于所述主金属带条的长度，所述从金属带条的宽度小于所述主金属带条的宽度。
  7. 根据权利要求3所述的测量装置，其中，所述谐振结构层包括四组复合谐振结构，所述四组复合谐振结构沿一垂直于所述第一基板的轴线的周向等间隔设置，且各组所述复合谐振结构相对于所述轴线与第一基板的交点中心对称地分布；
    每组所述复合谐振结构中，所述主谐振结构包括一条主金属带条，所述从谐振结构包括两条从金属带条，所述从金属带条垂直于所述主金属带条，且所述两条金属带条相对于所述主金属带条的垂直平分线对称布置；所述从金属带条位于所述主金属带条的远离所述轴线的一侧。
  8. 根据权利要求1所述的测量装置，其中，所述谐振结构层的材料为金属。
  9. 根据权利要求1所述的测量装置，其中，所述谐振结构层的厚度为0.01μm～5μm。
  10. 根据权利要求1所述的测量装置，其中，所述空腔的厚度为3μm～500μm。
  11. 根据权利要求1所述的测量装置，其中，所述第一配向膜和所述第二配向膜的配向方向一致。
  12. 根据权利要求1所述的测量装置，其中，第一配向膜覆盖谐振结构层。
  13. 根据权利要求1所述的测量装置，其中，在所述第一基板和所述第二基板之间设置边框，所述边框配合所述第一基板和所述第二基板限定用于容纳待测量的液晶的空腔。
  14. 根据权利要求13所述的测量装置，其中，边框由封框胶形成，并且边框包括液晶注入口用于将待测液晶注入所述空腔。
  15. 一种液晶介电常数的测量方法，其中，所述测量方法包括：
    准备包含待测量液晶的测量装置，所述测量装置为如权利要求1～14任一项所述的液晶介电常数的测量装置；
    使用太赫兹电磁波沿垂直于所述测量装置平面的方向照射所述测量装置，且使所述太赫兹电磁波的极化方向与所述测量装置中液晶的长轴相平行，接收透过所述测量装置的太赫兹电磁波，获得透射波强度随频率变化的第一曲线；
    使用太赫兹电磁波沿垂直于所述测量装置平面的方向照射所述测量装置，且使所述太赫兹电磁波的极化方向与所述测量装置中液晶的长轴相垂直，接收透过所述测量装置的太赫兹电磁波，获得透射波强度随频率变化的第二曲线；
    基于第一曲线找出所述第一曲线所匹配的液晶介电常数，将该介电常数作为液晶长轴方向的介电常数，并基于第二曲线找出所述第二曲线所匹配的液晶介电常数，将该介电常数作为液晶短轴方向的介电常数。
  16. 根据权利要求15所述的测量方法，其中，采用模拟仿真方法基于第一曲线找出所述第一曲线所匹配的液晶介电常数；采用模拟仿真方法基于第二曲线找出所述第二曲线所匹配的液晶介电常数。
  17. 根据权利要求16所述的测量方法，其中，采用模拟仿真方法找出所述液晶长轴方向的介电常数和所述液晶短轴方向的介电常数的步骤包括：
    根据获取所述第一曲线和所述第二曲线的步骤的测量实验模型，建立仿真模型；
    调整所述仿真模型中的液晶长轴方向的介电常数，使得到的仿真结果与所述第一曲线相吻合，此时对应的液晶长轴方向的介电常数即为待测量液晶长轴方向的介电常数；
    调整所述仿真模型中的液晶短轴方向的介电常数，使得到的仿真结果与所述第二曲线相吻合，此时对应的液晶短轴方向的介电常数即为待测量液晶短轴方向的介电常数。
  18. 一种液晶介电常数的测量设备，其中，所述测量设备包括：
    如权利要求1～14任一项所述的液晶介电常数的测量装置；
    设置于所述测量装置的一侧的太赫兹电磁波源；
    设置于所述测量装置另一侧的信号接收器；
    与所述太赫兹电磁波源和所述信号接收器相连的频谱分析仪，用于根据太赫兹电磁波源所发射的太赫兹电磁波与所述信号接收器所接收的电磁波生成透射波强度随频率变化的第一曲线和第二曲线。
  19. 根据权利要求18所述的测量设备，其中，所述太赫兹电磁波源和信号接收器中的一者位于所述第二基板背对所述第一基板的一侧，另一者位于所述第一基板背对所述第二基板的一侧。
  20. 根据权利要求18所述的测量设备，其中，所述测量系统还包括：与所述频谱分析仪相连的处理器，用于进行仿真推演，获得所述第一曲线所匹配的液晶长轴方向的介电常数和所述第二曲线所匹配的液晶短轴方向的介电常数。
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