WO2019242348A1 - 一种高灵敏硅二维风速计及其制作方法 - Google Patents

一种高灵敏硅二维风速计及其制作方法 Download PDF

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WO2019242348A1
WO2019242348A1 PCT/CN2019/078739 CN2019078739W WO2019242348A1 WO 2019242348 A1 WO2019242348 A1 WO 2019242348A1 CN 2019078739 W CN2019078739 W CN 2019078739W WO 2019242348 A1 WO2019242348 A1 WO 2019242348A1
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silicon
rectangular block
sensitivity
square
quadrangular
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PCT/CN2019/078739
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English (en)
French (fr)
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秦明
张瑶霖
易真翔
黄庆安
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东南大学
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P5/00—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft
    • G01P5/10—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P13/00—Indicating or recording presence, absence, or direction, of movement
    • G01P13/02—Indicating direction only, e.g. by weather vane

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  • the invention relates to a highly sensitive silicon two-dimensional anemometer and a manufacturing method thereof, and belongs to the technical field of anemometers.
  • Wind speed and direction are important meteorological parameters, which have important effects on environmental monitoring, air conditioning and outdoor production and activities. Therefore, it is of great practical significance to quickly and accurately measure wind speed and direction.
  • the wind speed and wind direction can also be measured by using the processed wind cup and wind vane, these mechanical devices are easy to wear due to moving parts, and have the disadvantages of large volume, high price, and frequent maintenance.
  • the position of the transmitting and detecting head of a typical ultrasonic wind speed sensor is fixed, so the relative structure is also large.
  • Miniature wind sensors based on MEMS processing technology have the characteristics of small size, low price, and good product consistency, and have been the focus of wind speed sensor research in recent years.
  • the technical problem to be solved by the present invention is to provide a highly sensitive silicon two-dimensional anemometer, which is not affected by the setting angle, and has a highly accurate and accurate wind speed measurement effect.
  • the present invention designs a highly sensitive silicon two-dimensional anemometer, which includes a substrate, an insulating layer, a quadrangular table, and four measurement groups;
  • the shape and size of the insulation layer are equal to the shape and size of the substrate.
  • the insulation layer covers the upper surface of the substrate.
  • the top surface of the square pyramid is parallel to its bottom surface, and the bottom surface of the square pyramid is larger than it.
  • the top surface and the bottom surface of the square box are fixed at the center of the upper surface of the insulation layer;
  • the four measuring groups correspond to the four inclined surfaces of the square prism.
  • Each measuring group includes a rectangular block heating element and two temperature measuring elements.
  • the rectangular block heating elements in each measuring group are fixedly disposed on the
  • the positive quadrangular table corresponds to the inclined surface, and the straight line where the midpoints of the two wide sides of each rectangular block heating element are located, passes the midpoint position of the top edge and the midpoint of the bottom edge of the set inclined surface, two in each measurement group.
  • the temperature measuring element is fixedly arranged on the corresponding inclined surface of the quadrangular platform on both sides of the rectangular block heating element, and the two temperature measuring elements in each measurement group are distributed symmetrically with respect to the corresponding rectangular block heating element;
  • the projection of the direction of the top surface of the prism, the setting structure of the measurement group on the four inclined surfaces of the regular quadrangular platform is symmetrically distributed relative to the center of the top surface of the regular quadrangular platform;
  • the pads corresponding to the rectangular block heating element and the temperature measuring element in each measurement group are fixedly arranged on the non-positive quadrangular table setting area on the insulation layer.
  • the rectangular block heating element and the temperature measuring element in each measurement group are respectively soldered.
  • the circuit is connected to the corresponding pad, and the solder circuit is located in the non-positive quadrangular platform setting area on the insulation layer.
  • the ends of the rectangular block-shaped heating elements in each of the measurement groups corresponding to the top edges of the inclined surfaces of the set squares are respectively extended to the top surface of the set of squares, and each The extended ends of the rectangular block heating element are not in contact with each other, and are projected along the direction of the top surface of the quadrangular platform when viewed from the top.
  • the measurement group setting structure on the four inclined surfaces of the quadrangular platform is center symmetrical with respect to the center position of the top distributed.
  • the regular quadrangular table is made of an insulating and low thermal conductivity material.
  • the regular quadrangular mesa is made of silicon material.
  • the insulation layer is made of silicon dioxide.
  • the technical problem to be solved by the present invention is to provide a method for manufacturing a highly sensitive silicon two-dimensional anemometer, which can efficiently and quickly realize the manufacture of the designed anemometer.
  • the present invention designs a method for manufacturing a highly sensitive silicon two-dimensional anemometer, which includes the following steps:
  • Step A Oxide the silicon wafer to form a mask, and then etch the mask through photolithography to form a mask pattern with a convex corner compensation structure;
  • Step B Etching the silicon wafer with an alkaline silicon etching solution to form a regular quadrangular mesa structure to obtain a substrate with a regular quadrangular mesa;
  • Step C Cleaning the substrate with a quadrangular mesa, and then thermally oxidizing to form a layer of silicon dioxide to form an insulating layer;
  • Step D Use a spray coating process to cover the silicon wafer completed with a layer of photoresist, and form a pattern of rectangular block heating elements and temperature measuring elements in each measurement group by photolithography, and then evaporate the metal nickel, and then use a stripping process. Remove excess metal;
  • Step E For the non-positive quadrangular mesa region on the upper surface of the insulation layer, use the process of step D to form a lead aluminum pad.
  • the silicon wafer in the step A is a silicon wafer with a (100) crystal phase.
  • the alkaline silicon etching solution in step B is an alkaline solution of potassium hydroxide.
  • an included angle between the inclined surface of the regular quadrangular table and the upper surface of the substrate is 54.74 °.
  • the high-sensitivity silicon two-dimensional anemometer and its manufacturing method according to the present invention have the following technical effects compared with the prior art:
  • the highly sensitive silicon two-dimensional anemometer designed by the present invention is a windward structure. At any time, there are always one or two slope faces facing the direction of the incoming wind. The installation requirements for the anemometer are low, and the sensitivity of the entire device can be improved. ; The rectangular block heating elements and temperature measuring elements of the anemometer are made on the slope surface of the quadrangular platform, which effectively reduces the chip volume. In this way, the anemometer is set on the slope surface, and the sensors facing the wind and leeward are isolated by the boss. Reduced cross-sensitivity and increased device sensitivity.
  • FIG. 1 is a three-dimensional schematic diagram of a highly sensitive silicon two-dimensional anemometer designed by the present invention
  • FIG. 2 is a schematic top view of a highly sensitive silicon two-dimensional anemometer according to the present invention.
  • a highly sensitive silicon two-dimensional anemometer designed by the present invention includes a substrate 1, an insulation layer, a quadrangular table 3, and four measurement groups.
  • the insulation layer 2 is made of silicon dioxide, and the shape and size of the insulation layer 2 are equal to the shape and size of the substrate 1.
  • the insulation layer 2 covers and is disposed on the substrate 1.
  • the quadrangular table 3 is designed to be made of insulating low thermal conductivity material, and in specific practical applications, the quadrangular table 3 is specifically made of silicon material; the top surface of the quadrangular table 3 is parallel to its bottom surface, and the quadrangular table 3 The bottom surface is larger than the top surface, and the bottom surface of the regular quadrangular platform 3 is fixedly disposed at the center position of the upper surface of the insulation layer 2.
  • Each measuring group includes a rectangular block heating element 4 and two temperature measuring elements 5, and the rectangular block heating element 4 in each measuring group. They are fixedly arranged on the corresponding inclined surface of the regular square table 3, and the straight line where the midpoints of the two wide sides of each rectangular block heating element 4 are located, passing the midpoint position of the top edge and the midpoint of the bottom edge of the set inclined surface.
  • the two temperature measuring elements 5 in the measurement group are fixedly arranged on the corresponding inclined surface of the quadrangular platform 3 on the two sides of the rectangular block heating element 4, and the two temperature measuring elements 5 in each measurement group correspond to the rectangular block shape.
  • the heating elements 4 are distributed axisymmetrically; the ends of the rectangular block-shaped heating elements 4 in each measurement group corresponding to the top sides of the inclined surfaces of the set square 3 are extended to the top surface of the set 4 and each rectangle is rectangular.
  • the extended ends of the block-shaped heating element 4 are not in contact with each other, and are projected along the direction of the top surface of the regular quadrangular platform 3 when viewed from above.
  • the measurement group setting structure on the four inclined surfaces of the quadrangular platform 3 is relative to the center position of the top surface of the quadrangular platform 3. Center symmetrical distribution.
  • the rectangular block-shaped heating elements 4 in each measurement group, and the pads 7 corresponding to the temperature measuring elements 5 are fixedly arranged on the non-positive quadrangular platform 3 setting area on the insulation layer 2.
  • the rectangular block-shaped heating elements 4 in each measurement group, The temperature measuring element 5 is respectively connected to the corresponding pad 7 through a solder circuit, and the solder circuit is located in the non-positive quadrangular platform 3 setting area on the insulation layer 2.
  • the present invention also designs a method for manufacturing a highly sensitive silicon two-dimensional anemometer.
  • the method specifically includes the following steps:
  • Step A A silicon wafer having a (100) crystal phase is oxidized to form a mask, and then the mask is etched by photolithography to form a mask pattern with a convex corner compensation structure.
  • Step B An alkaline silicon etching solution, such as an alkaline solution of potassium hydroxide, is used to etch the above silicon wafer to form a regular quadrangular mesa structure to obtain a substrate 1 with a quadrangular mesa 3, wherein the slope formed by this method is (111)
  • the crystal plane, the inner angle between the inclined surface of the regular quadrangular table 3 and the upper surface of the substrate 1 is 54.74 °.
  • Step C Cleaning the substrate 1 with the quadrangular mesa 3 and then thermally oxidizing it to form a layer of silicon dioxide to form an insulating layer 2.
  • Step D Use a spray coating process to cover a layer of photoresist on the silicon wafer completed in the previous step, and form a pattern of the rectangular block heating element 4 and the temperature measuring element 5 in each measurement group by photolithography.
  • the stripping process removes excess metal.
  • Step E For the non-positive quadrangular mesa 3 region on the upper surface of the insulation layer 2, use the process of step D to form a lead aluminum pad 7.
  • the above-designed high-sensitivity silicon two-dimensional anemometer is used in practice.
  • the rectangular block heating element 4 and the temperature measuring element 5 of the anemometer are placed on each inclined surface of the square table 3, which is a windward structure. It is not susceptible to the limitation that the chip must be placed horizontally. Under any wind action, there are always two wind-measuring structures on inclined surfaces for effective wind speed measurement. Because the anemometer structure is on a slope with a slope, even if the surface of the anemometer is not a horizontal surface, one or more inclined surfaces can always be guaranteed to face the wind, and an effective wind measurement can be achieved. At the same time, this three-dimensional structure can also effectively reduce the chip volume.
  • the rectangular block heating elements 4 on the four inclined surfaces of the positive quadrangular platform 3 are in a heating state, and the generated heat is directly radiated to the air and transmitted to the positions on both sides thereof.
  • the surface temperature field of the anemometer is symmetrically distributed; the temperature difference between the temperature measuring elements 5 on the two sides of the rectangular block heating element 4 is 0; when there is wind, the downstream temperature of the rectangular block heating element 4 is higher than the upstream temperature, and the wind speed
  • the temperature field distribution on the surface of the meter is no longer symmetrical, and it is specifically manifested as the temperature difference between the temperature measuring elements 5 on the two sides of the rectangular block-shaped heating element 4.
  • the high-sensitivity silicon two-dimensional anemometer designed by the above technical solution is a windward structure. At any time, there are always one or two slope faces facing the direction of the incoming wind. The requirements for the installation of the anemometer are low, and the whole device can be improved. Sensitivity; the rectangular block heating element 4 and temperature measuring element 5 of the anemometer are made on the slope surface of the quadrangular platform 3, which effectively reduces the chip volume. In this way, the anemometer is set on the slope surface, and the sensors facing the wind and leeward are affected. Boss isolation reduces cross-sensitivity and improves device sensitivity.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Measuring Volume Flow (AREA)
  • Indicating Or Recording The Presence, Absence, Or Direction Of Movement (AREA)

Abstract

本发明涉及一种高灵敏硅二维风速计，包括衬底(1)、绝缘隔热层(2)、正四棱台(3)和四个测量组；基于本发明所设计的技术方案，构成高灵敏硅二维风速计，同时设计了与之对应的高灵敏硅二维风速计制造方法，整个技术方案是一种迎风结构，任何时候总有一个或两个斜坡面面对来风的方向，对风速计的安装要求低，且可提高整个器件的灵敏度；风速计的矩形块状加热件(4)和测温元件(5)都制作在正四棱台(3)的斜坡面上，有效降低了芯片体积；如此，风速计设置在斜坡面上，迎风和背风的传感器受凸台隔离，降低了交叉敏感，提高了器件的灵敏度。

Description

一种高灵敏硅二维风速计及其制作方法 技术领域
本发明涉及一种高灵敏硅二维风速计及其制作方法，属于风速计技术领域。
背景技术
风速、风向是重要的气象参数，对环境监测、空气调节和户外生产、活动等有重要影响，因此快速准确测量出风速和风向具有重要的实际意义。众所周知，利用机械加工的风杯和风向标虽然也能测量风速和风向，但这些机械装置因具有移动部件而易磨损，同时具有体积大，价格昂贵，需要经常维护等缺点。典型超声风速传感器发射和探测接收头位置固定，因此相对结构也较大。基于MEMS加工技术的微型风传感器具有体积小，价格低，产品一致性好的特点，是近几年来风速传感器研究的热点。但是，由于硅衬底的高热导率，这类传感器的功耗较大，高风状态下灵敏度较低。采用背面腐蚀或者正面腐蚀的方法形成绝热薄膜，可以提高灵敏度，但是结构易损坏，不利于后道工艺和封装。
发明内容
本发明所要解决的技术问题是提供一种高灵敏硅二维风速计，不受设置角度影响，拥有高精度准确的风速测量效果。
本发明为了解决上述技术问题采用以下技术方案：本发明设计了一种高灵敏硅二维风速计，包括衬底、绝缘隔热层、正四棱台和四个测量组；
其中，绝缘隔热层的形状、尺寸与衬底的形状、尺寸相等，绝缘隔热层覆盖设置于衬底的上表面，正四棱台的顶面与其底面相平行，正四棱台的底面大于其顶面，正四棱台的底面固定设置于绝缘隔热层上表面的中心位置；
四个测量组与正四棱台的四个倾斜面彼此一一对应，各测量组分别均包括矩形块状加热件和两个测温元件，各测量组中的矩形块状加热件分别固定设置于正四棱台对应倾斜面上，且各矩形块状加热件两宽边中点连线所在直线、过所设倾斜面的顶边中点位置、底边中点位置，各测量组中的两个测温元件固定设置于四棱台对应倾斜面上、矩形块状加热件两侧的位置，且各测量组中的两个测温元件相对对应矩形块状加热件呈轴对称分布；沿俯视正四棱台顶面方向的投影，正四棱台四个倾斜面上的测量组设置结构、相对正四棱台顶面中心位置呈中心对称分布；
各测量组中矩形块状加热件、测温元件分别所对应的焊盘固定设置于绝缘隔热层上非正四棱台设置区，各测量组中矩形块状加热件、测温元件分别通过焊锡电路与对应焊盘相连接，且焊锡电路位于绝缘隔热层上非正四棱台设置区。
作为本发明的一种优选技术方案：所述各测量组中矩形块状加热件上对应所设正四棱 台倾斜面顶边的端部、分别均延伸至正四棱台的顶面上，且各矩形块状加热件上该延伸端彼此互不接触，沿俯视正四棱台顶面方向的投影，正四棱台四个倾斜面上的测量组设置结构、相对正四棱台顶面中心位置呈中心对称分布。
作为本发明的一种优选技术方案：所述正四棱台为绝缘低导热材料制成。
作为本发明的一种优选技术方案：所述正四棱台为硅材料制成。
作为本发明的一种优选技术方案：所述绝缘隔热层为二氧化硅制成。
与上述技术方案相对应，本发明还要解决的技术问题是提供一种针对高灵敏硅二维风速计的制造方法，能够高效快速的实现所设计风速计的制造。
本发明为了解决上述技术问题采用以下技术方案：本发明设计了一种高灵敏硅二维风速计的制造方法，包括如下步骤：
步骤A.针对硅片进行氧化形成一层掩膜，然后通过光刻刻蚀掩膜形成带有凸角补偿结构的掩膜图形；
步骤B.采用碱性硅腐蚀液腐蚀上述硅片形成正四棱台面结构，获得带有正四棱台的衬底；
步骤C.针对带有正四棱台的衬底进行清洗，然后重新热氧化形成一层二氧化硅，构成绝缘隔热层；
步骤D.采用喷胶工艺在上步骤完成的硅片上覆盖一层光刻胶，光刻形成各测量组中矩形块状加热件和测温元件的图形，然后蒸发金属镍，再采用剥离工艺去除多余的金属；
步骤E.针对绝缘隔热层上表面非正四棱台区域，采用步骤D的工艺形成引线铝焊盘。
作为本发明的一种优选技术方案：所述步骤A中的硅片为(100)晶相的硅片。
作为本发明的一种优选技术方案：所述步骤B中的碱性硅腐蚀液为氢氧化钾碱性溶液。
作为本发明的一种优选技术方案：所述步骤B中，所获带有正四棱台的衬底中，正四棱台倾斜面与衬底上表面的内侧夹角为54.74°。
本发明所述一种高灵敏硅二维风速计及其制作方法采用以上技术方案与现有技术相比，具有以下技术效果：
本发明所设计高灵敏硅二维风速计，是一种迎风结构，任何时候总有一个或两个斜坡面面对来风的方向，对风速计的安装要求低，且可提高整个器件的灵敏度；风速计的矩形块状加热件和测温元件都制作在正四棱台的斜坡面上，有效降低了芯片体积；如此，风速计设置在斜坡面上，迎风和背风的传感器受凸台隔离，降低了交叉敏感，提高了器件的灵敏度。
附图说明
图1是本发明设计高灵敏硅二维风速计的三维示意图；
图2是本发明设计高灵敏硅二维风速计的俯视示意图。
其中，1.衬底，2.绝缘隔热层，3.正四棱台，4.矩形块状加热件，5.测温元件，7.焊盘。
具体实施方式
下面结合说明书附图对本发明的具体实施方式作进一步详细的说明。
本发明所设计一种高灵敏硅二维风速计，如图1和图2所示，包括衬底1、绝缘隔热层2、正四棱台3和四个测量组。
其中，实际应用当中，绝缘隔热层2采用二氧化硅制成，绝缘隔热层2的形状、尺寸与衬底1的形状、尺寸相等，绝缘隔热层2覆盖设置于衬底1的上表面，正四棱台3设计采用绝缘低导热材料制成，并在具体的实际应用当中，正四棱台3具体采用硅材料制成；正四棱台3的顶面与其底面相平行，正四棱台3的底面大于其顶面，正四棱台3的底面固定设置于绝缘隔热层2上表面的中心位置。
四个测量组与正四棱台3的四个倾斜面彼此一一对应，各测量组分别均包括矩形块状加热件4和两个测温元件5，各测量组中的矩形块状加热件4分别固定设置于正四棱台3对应倾斜面上，且各矩形块状加热件4两宽边中点连线所在直线、过所设倾斜面的顶边中点位置、底边中点位置，各测量组中的两个测温元件5固定设置于四棱台3对应倾斜面上、矩形块状加热件4两侧的位置，且各测量组中的两个测温元件5相对对应矩形块状加热件4呈轴对称分布；各测量组中矩形块状加热件4上对应所设正四棱台3倾斜面顶边的端部、分别均延伸至正四棱台3的顶面上，且各矩形块状加热件4上该延伸端彼此互不接触，沿俯视正四棱台3顶面方向的投影，正四棱台3四个倾斜面上的测量组设置结构、相对正四棱台3顶面中心位置呈中心对称分布。
各测量组中矩形块状加热件4、测温元件5分别所对应的焊盘7固定设置于绝缘隔热层2上非正四棱台3设置区，各测量组中矩形块状加热件4、测温元件5分别通过焊锡电路与对应焊盘7相连接，且焊锡电路位于绝缘隔热层2上非正四棱台3设置区。
与上述所设计高灵敏硅二维风速计技术方案相对应的，本发明还设计了一种高灵敏硅二维风速计的制造方法，实际应用当中，具体包括如下步骤：
步骤A.针对(100)晶相的硅片，进行氧化形成一层掩膜，然后通过光刻刻蚀掩膜形成带有凸角补偿结构的掩膜图形。
步骤B.采用碱性硅腐蚀液，诸如氢氧化钾碱性溶液，腐蚀上述硅片形成正四棱台面结构，获得带有正四棱台3的衬底1，其中，通过这种方法形成的斜面为(111)晶面，正四棱台3倾斜面与衬底1上表面的内侧夹角为54.74°。
步骤C.针对带有正四棱台3的衬底1进行清洗，然后重新热氧化形成一层二氧化硅，构成绝缘隔热层2。
步骤D.采用喷胶工艺在上步骤完成的硅片上覆盖一层光刻胶，光刻形成各测量组中矩形块状加热件4和测温元件5的图形，然后蒸发金属镍，再采用剥离工艺去除多余的金属。
步骤E.针对绝缘隔热层2上表面非正四棱台3区域，采用步骤D的工艺形成引线铝焊盘7。
将上述所设计高灵敏硅二维风速计应用于实际当中，风速计的矩形块状加热件4与测温元件5均放置在正四棱台3的每个倾斜面上，是一种迎风结构，不易受芯片必须水平放置的限制。在任意某个风作用下，总有两个倾斜面上的测风结构可以进行有效地风速测量。由于风速计结构在有坡度的斜面上，因此即使风速计表面不是水平面，也能保证总有一个或以上的倾斜面迎风，即可以实现有效的风测量。同时这种立体结构也能够有效地缩小芯片体积。
具体来说，当风速计正常工作时，正四棱台3四个倾斜面上的矩形块状加热件4都处于加热状态，产生的热量直接向空气中散发，并传递到其两侧位置分别设置的测温元件5上。无风时，风速计表面温度场呈对称分布；矩形块状加热件4两侧位置测温元件5的温差为0；有风时，矩形块状加热件4的下游温度高于上游温度，风速计表面温度场分布不再对称，具体表现为矩形块状加热件4两侧位置测温元件5之间存在温度差。通过正四棱台3四个倾斜面上得到的四组温度信息，经过矢量合成计算和温差符号判断，可以得到风速和风向的信息。
上述技术方案所设计高灵敏硅二维风速计，是一种迎风结构，任何时候总有一个或两个斜坡面面对来风的方向，对风速计的安装要求低，且可提高整个器件的灵敏度；风速计的矩形块状加热件4和测温元件5都制作在正四棱台3的斜坡面上，有效降低了芯片体积；如此，风速计设置在斜坡面上，迎风和背风的传感器受凸台隔离，降低了交叉敏感，提高了器件的灵敏度。
上面结合附图对本发明的实施方式作了详细说明，但是本发明并不限于上述实施方式，在本领域普通技术人员所具备的知识范围内，还可以在不脱离本发明宗旨的前提下做出各种变化。

Claims (9)

  1. 一种高灵敏硅二维风速计，其特征在于：包括衬底(1)、绝缘隔热层(2)、正四棱台(3)和四个测量组；
    其中，绝缘隔热层(2)的形状、尺寸与衬底(1)的形状、尺寸相等，绝缘隔热层(2)覆盖设置于衬底(1)的上表面，正四棱台(3)的顶面与其底面相平行，正四棱台(3)的底面大于其顶面，正四棱台(3)的底面固定设置于绝缘隔热层(2)上表面的中心位置；
    四个测量组与正四棱台(3)的四个倾斜面彼此一一对应，各测量组分别均包括矩形块状加热件(4)和两个测温元件(5)，各测量组中的矩形块状加热件(4)分别固定设置于正四棱台(3)对应倾斜面上，且各矩形块状加热件(4)两宽边中点连线所在直线、过所设倾斜面的顶边中点位置、底边中点位置，各测量组中的两个测温元件(5)固定设置于四棱台(3)对应倾斜面上、矩形块状加热件(4)两侧的位置，且各测量组中的两个测温元件(5)相对对应矩形块状加热件(4)呈轴对称分布；沿俯视正四棱台(3)顶面方向的投影，正四棱台(3)四个倾斜面上的测量组设置结构、相对正四棱台(3)顶面中心位置呈中心对称分布；
    各测量组中矩形块状加热件(4)、测温元件(5)分别所对应的焊盘(7)固定设置于绝缘隔热层(2)上非正四棱台(3)设置区，各测量组中矩形块状加热件(4)、测温元件(5)分别通过焊锡电路与对应焊盘(7)相连接，且焊锡电路位于绝缘隔热层(2)上非正四棱台(3)设置区。
  2. 根据权利要求1所述一种高灵敏硅二维风速计，其特征在于：所述各测量组中矩形块状加热件(4)上对应所设正四棱台(3)倾斜面顶边的端部、分别均延伸至正四棱台(3)的顶面上，且各矩形块状加热件(4)上该延伸端彼此互不接触，沿俯视正四棱台(3)顶面方向的投影，正四棱台(3)四个倾斜面上的测量组设置结构、相对正四棱台(3)顶面中心位置呈中心对称分布。
  3. 根据权利要求1所述一种高灵敏硅二维风速计，其特征在于：所述正四棱台(3)为绝缘低导热材料制成。
  4. 根据权利要求3所述一种高灵敏硅二维风速计，其特征在于：所述正四棱台(3)为硅材料制成。
  5. 根据权利要求1所述一种高灵敏硅二维风速计，其特征在于：所述绝缘隔热层(2)为二氧化硅制成。
  6. 一种针对权利要求1至5中任意一项所述一种高灵敏硅二维风速计的制造方法，其特征在于，包括如下步骤：
    步骤A.针对硅片进行氧化形成一层掩膜，然后通过光刻刻蚀掩膜形成带有凸角补偿结构的掩膜图形；
    步骤B.采用碱性硅腐蚀液腐蚀上述硅片形成正四棱台面结构，获得带有正四棱台(3)的衬底(1)；
    步骤C.针对带有正四棱台(3)的衬底(1)进行清洗，然后重新热氧化形成一层二氧化硅，构成绝缘隔热层(2)；
    步骤D.采用喷胶工艺在上步骤完成的硅片上覆盖一层光刻胶，光刻形成各测量组中矩形块状加热件(4)和测温元件(5)的图形，然后蒸发金属镍，再采用剥离工艺去除多余的金属；
    步骤E.针对绝缘隔热层(2)上表面非正四棱台(3)区域，采用步骤D的工艺形成引线铝焊盘(7)。
  7. 根据权利要求6所述一种针对高灵敏硅二维风速计的制造方法，其特征在于：所述步骤A中的硅片为(100)晶相的硅片。
  8. 根据权利要求6所述一种针对高灵敏硅二维风速计的制造方法，其特征在于：所述步骤B中的碱性硅腐蚀液为氢氧化钾碱性溶液。
  9. 根据权利要求6所述一种针对高灵敏硅二维风速计的制造方法，其特征在于：所述步骤B中，所获带有正四棱台(3)的衬底(1)中，正四棱台(3)倾斜面与衬底(1)上表面的内侧夹角为54.74°。
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