WO2019242267A1 - 一种无热阵列波导光栅模块及宽温补偿方法 - Google Patents

一种无热阵列波导光栅模块及宽温补偿方法 Download PDF

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WO2019242267A1
WO2019242267A1 PCT/CN2018/123421 CN2018123421W WO2019242267A1 WO 2019242267 A1 WO2019242267 A1 WO 2019242267A1 CN 2018123421 W CN2018123421 W CN 2018123421W WO 2019242267 A1 WO2019242267 A1 WO 2019242267A1
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temperature
awg chip
range
awg
chip
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PCT/CN2018/123421
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English (en)
French (fr)
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吴凡
凌九红
李长安
胡家艳
孔祥健
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武汉光迅科技股份有限公司
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Priority to EP18923686.2A priority Critical patent/EP3812808A4/en
Publication of WO2019242267A1 publication Critical patent/WO2019242267A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12026—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence

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  • Embodiments of the present invention relate to the field of optical devices, and in particular, to an athermal array waveguide grating module and a wide temperature compensation method.
  • the center wavelength accuracy needs to be controlled within +/- 0.04nm, +/- 0.02nm, and +/- 0.01nm, respectively.
  • the traditional silicon-based AWG chip is more sensitive to temperature.
  • the drift of the center wavelength with temperature is 0.0118nm / ° C.
  • the center wavelength of the AWG chip The amount of drift significantly exceeds the system requirements. Therefore, measures need to be taken to control the center wavelength of the AWG chip so that it can work normally within the working environment temperature.
  • a common method is to use a heating chip and a temperature control circuit to fix the chip temperature at a certain constant value, and usually it is necessary to control the temperature above 65 °.
  • the current chip-level athermal AWG technology's wavelength accuracy is mainly reflected in the fact that it only satisfies the commercial temperature region, such as suppressing its wavelength and temperature-dependent characteristics within -5 to 65 ° C.
  • the commercial temperature region such as suppressing its wavelength and temperature-dependent characteristics within -5 to 65 ° C.
  • more than one triangular groove needs to be etched, the process is difficult, and because of the chip process itself, the yield rate will be lower than the existing technology. Therefore, there is an urgent need for a solution that enables chip-level AWG modules to operate at a wide temperature (-40 to 85 ° C) range with low power consumption and a center wavelength that meets the requirements of 50G, 25G, or even more dense wavelength division multiplexing systems. .
  • embodiments of the present invention provide a heat-free array waveguide grating module and a wide temperature compensation method.
  • AWG chip the back of the AWG chip is provided with a metal electrode
  • an embodiment of the present invention provides a method for wide temperature compensation based on the athermal array waveguide grating module described in the first aspect, including:
  • the working temperature of the AWG chip is adjusted to a target temperature or maintained at a predetermined target temperature by a temperature adjustment control device of the athermal array waveguide grating module.
  • the preset temperature range is a temperature range within the industrial temperature range.
  • a method for wide temperature compensation of an athermal array waveguide grating module is based on different compensation states of the athermal array waveguide grating module in an industrial temperature range, when the temperature is within a preset temperature range in the industrial temperature range.
  • the temperature of the AWG chip is adjusted to a target temperature or maintained within a predetermined range of the target temperature by the temperature adjustment control device of the athermal array waveguide grating module.
  • the method of the embodiment of the present invention performs processing within a preset temperature range. With lower power consumption and faster response speed, the control accuracy of wavelength drift can be adapted to a wider temperature range, which can meet the needs of industrial applications.
  • FIG. 1 is a schematic structural diagram of an athermal array waveguide grating module according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a back surface of an athermal array waveguide grating according to an embodiment of the present invention
  • FIG. 3 is a schematic flowchart of a method for wide temperature compensation of a thermal array waveguide grating module according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram of a wavelength drift curve of an arrayed waveguide grating module in an industrial temperature range in the prior art
  • FIG. 5 is a schematic diagram of a comparison of wavelength drift curves before and after wide temperature compensation in an over-compensated state in an industrial temperature range according to an embodiment of the present invention
  • FIG. 6 is a schematic diagram of a comparison of wavelength drift curves before and after wide temperature compensation in an under-compensated state in an industrial temperature range according to an embodiment of the present invention
  • the triangular groove structure is etched at the AWG chip Roland circle or array waveguide, and the design of the groove satisfies the following formula:
  • n silicone represents the effective refractive index of the filler material
  • ⁇ L silicone is the difference in trench width between adjacent waveguides of the array waveguide
  • T is the temperature.
  • the wavelength drift caused by the temperature of the chip waveguide and the negative light material has the following relationship:
  • a, b, and c respectively represent the coefficients of the quadratic term, the coefficients of the first term, and the constants of the change function of the core temperature with the wavelength in the above formula.
  • the AWG chip uses a specially processed AWG chip on the optical path.
  • the triangular groove is only opened once on the optical path and filled with polymer material, so it can only compensate the first term of the central wavelength change with temperature, and it cannot compensate its second term. .
  • the AWG chip with special processing after the chip optical path it usually only meets the commercial working environment, that is, the temperature is guaranteed to be in the range of -5 ° C to 65 ° C, and the central wavelength variation is about 40pm. Therefore, this method can only maintain the stability of the wavelength in a limited operating temperature range, and when the working environment temperature is extended to -40 ° C to 85 ° C, the requirements for more dense wavelength division multiplexing systems with channel spacing above 100G, accuracy, Obviously insufficient.
  • This problem also exists in other chip-level AWG chips that are filled with organic materials or structurally processed in the waveguide design to produce a temperature coefficient opposite to that of the waveguide.
  • FIG. 1 is a schematic structural diagram of an athermal array waveguide grating module according to an embodiment of the present invention.
  • the athermal array waveguide grating module shown in FIG. 1 includes:
  • AWG chip 10 the back of the AWG chip 10 is provided with a metal electrode 12, please refer to FIG. 2;
  • a temperature adjustment control device electrically connected to the metal electrode 12 for calculating the working temperature of the AWG chip through a resistance value of the metal electrode 12 and in a preset temperature range of an industrial temperature range
  • the working temperature of the AWG chip is adjusted to a target temperature or maintained within a predetermined range of the target temperature.
  • the optical path portion of the AWG chip 10 is provided with one or more triangular grooves 11.
  • a single-core fiber array is coupled to the input end of the AWG chip as the input fiber array 13
  • a multi-core fiber array is coupled to the output end of the AWG chip as the output fiber array 14.
  • the temperature adjustment control device is only connected with the The AWG chip 10 is in contact and has no contact with the single-core fiber array and the multi-core fiber array. Therefore, the temperature adjustment control device only performs chip-level temperature adjustment on the AWG chip 10 without affecting related components of the AWG chip, such as the input fiber array. , Output fiber array, etc.
  • the working temperature of the AWG chip can be adjusted to -5 ° C, or -4.5 ° C or -5.5 ° C; or the target temperature is -5 to Any value between -65 °C, keep the working temperature of the AWG chip within the range of -5 ⁇ -65 °C.
  • the industrial temperature range described in the embodiment of the present invention may be a temperature range of -40 to 85 ° C, and the preset temperature range is a temperature range within the industrial temperature range.
  • An athermal array waveguide grating module provided by an embodiment of the present invention is connected to a temperature adjustment control device through a metal electrode provided on the back of the AWG chip.
  • the temperature adjustment control device can calculate the working temperature of the AWG chip through the resistance value of the metal electrode. After knowing the working temperature of the AWG chip, the entire AWG chip can be uniformly heated or cooled down accordingly, so as to achieve chip-level AWG chip temperature adjustment and monitoring.
  • the AWG chip described in the embodiment of the present invention is fixed on a temperature control device, and the temperature control device is only in contact with the AWG chip.
  • the AWG chip is uniformly heated or cooled at the chip level as a whole, and avoids the input waveguide and the output waveguide. Core or multi-core fiber arrays to achieve chip-level temperature compensation.
  • the thermal expansion coefficient of the optical path base 20 is equal to or approximately equal to the thermal expansion coefficient of the material of the AWG chip 10;
  • the circuit control section 21 is configured to detect a resistance value of the metal electrode 12, calculate an operating temperature of the AWG chip 10 according to the resistance value, and perform an operation on the AWG chip within a preset temperature range of an industrial temperature range. 10 performs heating or cooling to adjust the working temperature of the AWG chip 10 so that the working temperature of the AWG chip 10 is adjusted to a target temperature or maintained within a predetermined range of the target temperature.
  • FIG. 3 is a schematic flowchart of a method for wide temperature compensation of an athermal array waveguide grating module according to an embodiment of the present invention.
  • a method for wide temperature compensation based on the above athermal array waveguide grating module includes:
  • the preset temperature range is a temperature range within the industrial temperature range.
  • the working temperature of the AWG chip can be adjusted to -5 ° C, or -4.5 ° C or -5.5 ° C; or the target temperature is any value between -5 and -65 ° C, so that the AWG chip can work.
  • the temperature is maintained in the range of -5 to -65 ° C.
  • FIG. 4 is a schematic diagram of the wavelength drift curve of an arrayed waveguide grating module in the industrial temperature range of the prior art.
  • the arrayed waveguide grating module has three compensation states, including symmetry compensation and under compensation. And over compensation.
  • Symmetric compensation satisfies: compensation coefficient It is the same as b, where d ⁇ ′ is the change in the central wavelength caused by the temperature change, dT is the change in temperature, and b is the coefficient of the linear term of the function of the chip ’s central wavelength ⁇ with temperature T.
  • the compensation effect is only good at -5 to 65 ° C, and the compensation effect is poor in the temperature range of -40 to -5 ° C and 65 to 85 ° C.
  • Overcompensation meets: Is less than b, where d ⁇ ′ is the change in the central wavelength caused by the temperature change, dT is the change in temperature, and b is the coefficient of the linear term of the function of the chip ’s central wavelength ⁇ with temperature T.
  • d ⁇ ′ is the change in the central wavelength caused by the temperature change
  • dT is the change in temperature
  • b is the coefficient of the linear term of the function of the chip ’s central wavelength ⁇ with temperature T.
  • the compensation effect is different in different temperature ranges.
  • the embodiments of the present invention can adopt different temperature adjustment strategies in different temperature ranges according to different compensation states, and apply heat treatment to the athermal array waveguide.
  • the AWG chip of the grating module is heated or cooled, so that the athermal array waveguide grating module is always in the target temperature accessory or target temperature range that can achieve better compensation effect.
  • step 301 based on the compensation state, when the ambient temperature is within a preset temperature range, the working temperature of the AWG chip is controlled by the temperature adjustment control device of the athermal array waveguide grating module. Adjusted to or maintained within a predetermined range of target temperature, including:
  • the AWG chip is heated or cooled by the temperature adjustment control device to adjust the working temperature of the AWG chip to a target
  • the temperature may be maintained within a predetermined range of the target temperature.
  • the metal electrode on the back of the AWG chip is connected to the temperature adjustment control device, and the resistance of the metal electrode is detected to calculate the working temperature of the AWG chip.
  • the compensation effect is good only at -5 to 65 ° C, and the compensation effect is poor in the temperature range of -40 to -5 ° C and 65 to 85 ° C. , It has a good compensation effect at -40 ⁇ 25 °C, and has a poor compensation effect at 25 ⁇ 85 °C; When it is over-compensated, it has a good compensation effect at 25 ⁇ 85 °C, and it has a poor compensation effect at -40 ⁇ 25 °C. .
  • the AWG chip can be temperature compensated in two temperature ranges of -40 to -5 ° C and 65 to 85 ° C in the symmetrical compensation state; and the AWG chip can be temperatureed in the temperature range of 25 to 85 ° C in the under compensation state. Compensation; In the over-compensation state, temperature compensation is performed on the AWG chip in a temperature range of -40 to 25 ° C, so that the working temperature of the AWG chip approaches the target temperature or is maintained in the target temperature range, thereby controlling wavelength drift.
  • step 301 based on the compensation state, when the ambient temperature is within one or more preset temperature ranges, the AWG chip is heated or cooled by the temperature adjustment control device, so as to cool the AWG chip.
  • the working temperature is adjusted to the target temperature or maintained within a predetermined range of the target temperature, including:
  • the AWG chip can be temperature compensated in the temperature range of -40 to 25 ° C in the overcharged state.
  • temperature compensation is performed only when the ambient temperature is in the range of -40 to -5 ° C.
  • the specific temperature compensation is that the AWG chip is heated only by the temperature adjustment control device.
  • the actual working temperature of the AWG chip is controlled at about -5 ° C. When the actual working temperature of the AWG chip is -5 ° C, its wavelength drift is small, which can meet industrial applications.
  • the temperature adjustment control device when the working temperature of the AWG chip is in the range of -5 to 25 ° C, the temperature can still be further adjusted by the temperature adjustment control device, and the AWG chip is continuously heated, so that the actual working temperature of the AWG chip is close to 25 ° C. At this time, the AWG The chip wavelength drift is smaller, and the wavelength drift control is close to the best effect.
  • FIG. 5 is a schematic diagram showing a comparison of a wavelength drift curve before and after wide temperature compensation in an over-compensated state in an industrial temperature range according to an embodiment of the present invention. According to a relationship curve between a center wavelength drift and a temperature after width compensation according to an embodiment of the present invention, and when the method is not used, By comparing the relationship between the central wavelength drift and the temperature, it can be known that the method can effectively control the wavelength drift of the AWG chip in the industrial temperature range, and meet the needs of industrial applications.
  • step 301 based on the compensation state, when the ambient temperature is within one or more preset temperature ranges, the AWG chip is heated or cooled by the temperature adjustment control device, so as to cool the AWG chip.
  • the working temperature is adjusted to the target temperature or maintained within a predetermined range of the target temperature, including:
  • the AWG chip is cooled by the temperature adjustment control device, so that the operating temperature of the AWG chip is maintained below 65 ° C.
  • the AWG chip can be temperature compensated in the temperature range of 25-85 ° C in the state of default.
  • the temperature of the AWG chip when the working temperature of the AWG chip is in the range of 25 to 65 ° C, the temperature can still be further adjusted by the temperature adjustment control device, and the temperature of the AWG chip is continued to be reduced, so that the actual working temperature of the AWG chip is close to 25 ° C. At this time, the AWG chip The wavelength drift is smaller, and the wavelength drift control is close to the best effect.
  • FIG. 6 is a schematic diagram showing a comparison of a wavelength drift curve before and after wide temperature compensation in an under-compensated state in an industrial temperature range according to an embodiment of the present invention. According to a relationship curve between a center wavelength drift and a temperature after width compensation according to an embodiment of the present invention, and when the method is not used, By comparing the relationship between the central wavelength drift and the temperature, it can be known that the method can effectively control the wavelength drift of the AWG chip in the industrial temperature range, and meet the needs of industrial applications.
  • the compensation state includes a symmetric compensation state; accordingly,
  • step 301 based on the compensation state, when the ambient temperature is within one or more preset temperature ranges, the AWG chip is heated or cooled by the temperature adjustment control device, so as to cool the AWG chip.
  • the working temperature is adjusted to the target temperature or maintained within a predetermined range of the target temperature, including:
  • the AWG chip is heated by the temperature adjustment control device, so that the working temperature of the AWG chip is maintained above -5 ° C. ;
  • the ambient temperature is in the range of 65-85 ° C, the AWG chip is cooled by the temperature adjustment control device, so that the working temperature of the AWG chip is maintained below 65 ° C;
  • wavelength adjustment is performed through the structure of the AWG chip of the athermal array waveguide grating module to implement wavelength compensation control.
  • the AWG chip in the symmetrical compensation state, can be temperature compensated in two temperature ranges of -40 to -5 ° C and 65 to 85 ° C.
  • the actual working temperature of the AWG chip can be maintained in a range of -5 to 65 ° C.
  • the wavelength of the AWG chip of the athermal array waveguide grating module can be adjusted to achieve accurate wavelength control. Specifically, the wavelength can be adjusted through the triangular groove of the optical path part of the AWG chip.
  • FIG. 7 is a schematic diagram showing a comparison of a wavelength drift curve before and after wide temperature compensation in a symmetrical compensation state in an industrial temperature range according to an embodiment of the present invention. According to a relationship curve between a center wavelength drift and a temperature after width compensation according to an embodiment of the present invention, and when the method is not used By comparing the relationship between the central wavelength drift and the temperature, it can be known that the method can effectively control the wavelength drift of the AWG chip in the industrial temperature range, and meet the needs of industrial applications.
  • the embodiments of the present invention provide a thermally-free arrayed waveguide grating module, and provide a method for wide temperature compensation based on the thermally-freely arrayed waveguide grating module, which has the following beneficial effects:
  • the embodiment of the present invention further controls the wavelength drift based on the commercial temperature application of the non-thermal AWG chip, so that the control accuracy of the wavelength drift can be adapted to a wider temperature range; only for chip-level AWG components in the industrial temperature range Regulating and controlling, compared with the way that the thermal AWG requires constant temperature treatment of the entire module over the entire operating temperature range, the power consumption is lower and the response speed is faster; the chip-level thermal AWG device is more mature, and the embodiments of the present invention only In the prior art, segmented temperature control is sufficient, which is relatively easy to implement and can meet the needs of industrial production and applications.

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Abstract

一种无热阵列波导光栅模块及宽温补偿方法。无热阵列波导光栅模块包括：AWG芯片（10），AWG芯片（10）的背面设置有金属电极（12）；温度调节控制装置，温度调节控制装置与金属电极（12）电连接，用于通过金属电极（12）的阻值计算AWG芯片（10）的工作温度，并在工业温度范围的预设温度范围内将AWG芯片（10）的工作温度调节至目标温度或维持在目标温度的预定范围内。针对芯片级AWG组件在工业级温度范围的预设温度范围内进行温度调节控制，功耗更低，响应速度更快，使得波长漂移的控制精度能适应更宽的温度范围，能够满足工业应用需求。

Description

一种无热阵列波导光栅模块及宽温补偿方法 技术领域
本发明实施例涉及光器件领域，尤其涉及一种无热阵列波导光栅模块及宽温补偿方法。
背景技术
阵列波导光栅(Arrayed Waveguide Gratings，简称AWG)是基于平面光波导的光器件，由输入波导、输入平板波导、阵列波导、输出平板波导和输出波导组成，其中相邻阵列波导具有固定的长度差。AWG是密集波分复用系统的关键光器件，具有集成度高、通道数目多、插入损耗小，易于批量自动化生产等优点。AWG密集波分复用系统对复用/解复用器件的中心波长稳定性要求较高，中心波长精度需要控制在通道间隔的+/-5％以内，通常在100GHz，50GHz和25GHz间隔的波分复用系统中，中心波长精度分别需要控制+/-0.04nm，+/-0.02nm和+/-0.01nm以内。但是，传统的硅基AWG芯片对温度比较敏感，一般中心波长随温度的漂移为0.0118nm/℃，在波分复用系统工作环境温度内(-40℃至85℃)，AWG芯片的中心波长漂移量明显超出了系统要求，因此，需要采用措施来控制AWG芯片的中心波长，使其能在工作环境温度内正常工作。常用的方法是采用加热片和温控电路将芯片温度固定在某一恒定值，通常需要将温度控制在65°以上。
无热AWG(Athermal AWG，简称AAWG)技术是一种常用的中心波长控制技术，无热AWG采用温度补偿的技术保持波长的稳定，其中芯片级的无热AWG技术方案不同于采用温度驱动杆的热胀冷缩原理驱动相对位移来补偿波长随温度的漂移原理。现有实现方法中较为常见的是采用在芯片光路中加入了一部分负热系数材料，比如硅酮、 polymer、紫外胶材料等，其热光系数与二氧化硅材料热光系数符号相反，使温度对两种材料的影响相互抵消，从而补偿与温度相关的AWG中心波长随温度的漂移。负热系数的填充材料通常对于温度的负光路变化值比SIO2基波导大几十倍。因此采用这种方案制作的无热AWG模块的工作温度相关特性只有SIO2基AWG芯片的几十分之一。
现有的芯片级无热AWG技术波长精度主要体现在仅满足商温区域例如-5～65℃内抑制其波长温度相关特性。而面对工业级的无热AWG芯片，需要刻蚀不止一个三角槽，工艺难度高，且芯片工艺本身原因，成品率会较现有技术降低。因此，亟需要一种方案，使得芯片级AWG模块在宽温(-40～85℃)范围工作时，功耗低、且中心波长满足50G、25G甚至更为密集的波分复用系统的要求。
发明内容
针对现有技术存在的问题，本发明实施例提供一种无热阵列波导光栅模块及宽温补偿方法。
第一方面，本发明实施例提供一种无热阵列波导光栅模块，包括：
AWG芯片，所述AWG芯片的背面设置有金属电极；
温度调节控制装置，所述温度调节控制装置与所述金属电极电连接，用于通过所述金属电极的阻值计算所述AWG芯片的工作温度，并在工业温度范围的预设温度范围内将所述AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内。
本发明实施例提供的一种无热阵列波导光栅模块，通过AWG芯片的背面设置有金属电极与温度调节控制装置相连，温度调节控制装置可以通过金属电极的阻值计算AWG芯片的工作温度，在获知AWG芯片的工作温度后，能够对AWG芯片整体均匀的加热或做相应的降温调节处理，从而实现芯片级AWG芯片的温度调节与监控。
第二方面，本发明实施例提供一种基于第一方面所述无热阵列波 导光栅模块的宽温补偿方法，包括：
获取所述无热阵列波导光栅模块处于工业温度范围内的补偿状态；
基于所述补偿状态，当环境温度在预设温度范围内时，通过所述无热阵列波导光栅模块的温度调节控制装置将所述AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内；
其中，所述预设温度范围为所述工业温度范围内的一段温度范围。
本发明实施例提供的一种无热阵列波导光栅模块的宽温补偿方法，根据无热阵列波导光栅模块处于工业温度范围内的不同的补偿状态，在工业温度范围内的预设温度范围内时，通过所述无热阵列波导光栅模块的温度调节控制装置将AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内。针对芯片级AWG组件在工业级温度范围内进行温度调节控制，相比有热AWG需要在整个工作温度范围内对整个模块进行恒温处理的方式，本发明实施例方法在预设温度范围内进行处理，功耗更低，响应速度更快，使得波长漂移的控制精度能适应更宽的温度范围，能够满足工业应用需求。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例一种无热阵列波导光栅模块结构示意图；
图2为本发明实施例无热阵列波导光栅背面示意图；
图3为本发明实施例无热阵列波导光栅模块的宽温补偿方法流程示意图；
图4为现有技术工业温度范围内的阵列波导光栅模块的波长漂移 曲线示意图；
图5为本发明实施例工业温度范围内过补偿状态下宽温补偿前后的波长漂移曲线对比示意图；
图6为本发明实施例工业温度范围内欠补偿状态下宽温补偿前后的波长漂移曲线对比示意图；
图7为本发明实施例工业温度范围内对称补偿状态下宽温补偿前后的波长漂移曲线对比示意图；
其中，
10、AWG芯片，         11、三角槽，
12、金属电极，        13、输入光纤阵列，
14、输出光纤阵列，    20、光路基座，
21、电路控制部分。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
目前，在AWG芯片罗兰圆或阵列波导处刻蚀三角形沟槽结构，沟槽的设计满足如下公式：
Figure PCTCN2018123421-appb-000001
其中，
Figure PCTCN2018123421-appb-000002
表示硅基二氧化硅波导，n silicone表示填充材料的有效折射率，
Figure PCTCN2018123421-appb-000003
是阵列波导的路程长度差，ΔL silicone是阵列波导相邻波导间的沟槽宽度差；T表示温度。
芯片波导和负光材料温度引起的波长漂移，有如下关系：
Figure PCTCN2018123421-appb-000004
其中，k为比例系数，与所选填充材料有关。实际应用中硅基二氧化硅波导的折射率随温度变化具有高阶系数，且波长漂移量dλ/dT的表现为非线性变化，即低温到常温(-40℃～25℃)变化量以及常温到高温(25℃～85℃)的变化量相差约0.04nm。通过公式(1)和(2)以及硅基二氧化硅波导中心波长随温度的漂移值，可以近似的推导出中心波长dλ随温度T的变化量，得到补偿系数
Figure PCTCN2018123421-appb-000005
(λ′为补偿后的输出波长)，可以保证芯片级AWG在一定范围温度内，通过自身结构调节来控制波长精度。
本身AWG芯片的中心波长λ随温度T的变化是非线性的，如公式(3)所示。
dλ＝a*dT 2+b*dT+c        (3)
其中，a、b、c分别表示上述公式中中心温度随波长变化函数的二次项系数，一次项系数和常数。
AWG芯片光路上采用特殊处理后的AWG芯片，通常仅在光路上开一次三角槽并填充高分子(polymer)材料，所以只能补偿中心波长随温度变化的一次项，并不能补偿其二次项。
经过补偿后的中心波长-温度曲线是开口向上的抛物线，且所选材料有一定的补偿抑制范围，如图4所示，芯片级AWG以25℃常温为中心点时，补偿系数在-40～85℃范围内，-40～25℃以及25～85℃中心波 长漂移值相同时，即补偿系数
Figure PCTCN2018123421-appb-000006
与b相等，为对称补偿；当-40～25℃范围内中心波长漂移值大于25～85℃中心波长漂移值，即补偿系数
Figure PCTCN2018123421-appb-000007
大于b，那么是过补偿；如果-40～25℃中心波长漂移值小于25～85℃中心波长漂移值，即补偿系数
Figure PCTCN2018123421-appb-000008
小于b，那么是欠补偿。
显然，对于芯片光路上采用特殊处理后的AWG芯片，通常仅满足商温工作环境，即：保证温度在-5℃至65℃范围内，中心波长变化量约为40pm。因此该方法只能在有限的工作温度范围内保持波长的稳定性，而当工作环境温度扩展到-40℃至85℃时，对于100G以上通道间隔的更密集波分复用系统的要求，精度明显不足。该问题也存在于其它采用有机材料填充或在波导设计中采用结构处理产生与波导温度系数相反的芯片级AWG芯片中。
图1为本发明实施例一种无热阵列波导光栅模块结构示意图，如图1所示的无热阵列波导光栅模块，包括：
AWG芯片10，所述AWG芯片10的背面设置有金属电极12，请参考图2；
温度调节控制装置，所述温度调节控制装置与所述金属电极12电连接，用于通过所述金属电极12的阻值计算所述AWG芯片的工作温度，并在工业温度范围的预设温度范围内将所述AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内。
请参考图1，所述AWG芯片10的光路部分设置有一个或多个三角槽11。所述AWG芯片的输入端耦合有单芯光纤阵列，作为输入光纤阵列13，所述AWG芯片的输出端耦合有多芯光纤阵列，作为输出光纤阵列14；所述温度调节控制装置仅与所述AWG芯片10接触，与所述单芯光纤阵列及多芯光纤阵列无接触，因而温度调节控制装置仅对AWG芯片10进行芯片级温度调节，而不影响AWG芯片的相关的 组件、例如输入光纤阵列、输出光纤阵列等。
当AWG芯片在不同的工作温度时，其背面的金属电极会呈现不同的阻值；温度调节控制装置通过金属电极的阻值即可计算出AWG芯片的工作温度，并在预设温度范围内调节AWG芯片的工作温度，若计算出的AWG芯片的工作温度较高，则对AWG芯片进行降温；若计算出的AWG芯片的工作温度较低，则对AWG芯片进行加热，最终将AWG芯片的工作温度调节至目标温度或者目标温度的预定范围内，例如目标温度-5℃时，则可以将AWG芯片的工作温度调节-5℃，或者-4.5℃或者-5.5℃；或者目标温度为-5～-65℃之间的任意值，使AWG芯片的工作温度维持在-5～-65℃范围内等。
具体的目标温度和目标温度范围可以根据波长漂移控制的需求而定。当AWG芯片的工作温度趋近于目标温度或维持在目标温度范围内时，AWG芯片的波长漂移较小，可以输出较稳定的波长，满足工业应用的需要。
本发明实施例所述工业温度范围可以是-40～85℃的温度范围，预设温度范围是工业温度范围内的一段温度区间。具体的预设温度范围可以有多个，即将工业温度范围划分多个温度段，这样温度调节控制装置可以在不同的温度段对AWG芯片进行加热或降温处理。
本发明实施例提供的一种无热阵列波导光栅模块，通过AWG芯片的背面设置有金属电极与温度调节控制装置相连，温度调节控制装置可以通过金属电极的阻值计算AWG芯片的工作温度，在获知AWG芯片的工作温度后，能够对AWG芯片整体均匀的加热或做相应的降温调节处理，从而实现芯片级AWG芯片的温度调节与监控。
优选的，所述AWG芯片10背面的金属电极与所述温度控制装置通过导电胶固定粘接，从而将所述AWG芯片固定于所述温度调节控制装置上。优选的，所述金属电极的材质为钛钨合金。
本发明实施例所述AWG芯片固定在温度控制装置上，且温度控制装置仅与AWG芯片接触，对AWG芯片进行芯片级的整体均匀的加热 或降温处理，并避开输入波导和输出波导即单芯或多芯光纤阵列，实现芯片级的温度补偿。
基于上述实施例，所述温度调节控制装置包括光路基座20和设置于所述光路基座20上的电路控制部分21；
所述光路基座20的热膨胀系数与所述AWG芯片10的材料的热膨胀系数相等或者近似相等；
所述电路控制部分21，用于检测所述金属电极12的阻值，根据所述阻值计算所述AWG芯片10的工作温度，并在工业温度范围的预设温度范围内对所述AWG芯片10进行加热或降温，从而调节所述AWG芯片10的工作温度，使得所述AWG芯片10的工作温度调节至目标温度或维持在目标温度的预定范围内。
本发明实施例温度调节控制装置的光路基座与AWG芯片的材料的热膨胀系数相等或者近似相等，这样，当温度变化时，不会因为热变形不一致在芯片上产生应力和变形，因此光路基座不会影响AWG芯片的波长稳定性。温度调节控制装置的电路控制部分主要用于检测、计算和温度调节，包括检测金属电极的阻值，通过阻值计算AWG芯片的工作温度；根据AWG芯片的工作温度具体处于哪个温度范围，决定对AWG芯片进行加热、降温或不处理等，使AWG芯片的工作温度趋近于目标温度或维持在目标温度范围内，满足工业应用时波长漂移控制的要求。
图3为本发明实施例无热阵列波导光栅模块的宽温补偿方法流程示意图，一种基于上述无热阵列波导光栅模块的宽温补偿方法，包括：
300，获取所述无热阵列波导光栅模块处于工业温度范围内的补偿状态；
301，基于所述补偿状态，当环境温度在预设温度范围内时，通过所述无热阵列波导光栅模块的温度调节控制装置将所述AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内；
其中，所述预设温度范围为所述工业温度范围内的一段温度范围。
具体的，本发明实施例所述工业温度范围可以是-40～85℃的温度范围，预设温度范围是工业温度范围内的一段温度区间。具体的预设温度范围可以有多个，即将工业温度范围划分多个温度段，这样温度调节控制装置可以在不同的温度段对AWG芯片进行加热或降温处理。
假设目标温度-5℃时，可以将AWG芯片的工作温度调节-5℃，或者-4.5℃或者-5.5℃；或者目标温度为-5～-65℃之间的任意值，使AWG芯片的工作温度维持在-5～-65℃范围内等。
图4为现有技术工业温度范围内的阵列波导光栅模块的波长漂移曲线示意图，从图4和上述公式(3)可看出，阵列波导光栅模块存在三种补偿状态，包括对称补偿、欠补偿和过补偿。
对称补偿满足：补偿系数
Figure PCTCN2018123421-appb-000009
与b相等，其中，dλ′为温度变化引起的中心波长变化，dT为温度变化，b为芯片中心波长λ随温度T变化函数的一次项系数。无热阵列波导光栅模块在工业温度范围内处于对称补偿时，仅在-5～65℃具有较好的补偿效果，在-40～-5℃以及65～85℃温度段内补偿效果较差。
欠补偿满足：
Figure PCTCN2018123421-appb-000010
大于b，其中，dλ′为温度变化引起的中心波长变化，dT为温度变化，b为芯片中心波长λ随温度T变化函数的一次项系数。无热阵列波导光栅模块在工业温度范围内处于欠补偿时，在-40～25℃具有较好的补偿效果，在25～85℃补偿效果较差。
过补偿满足：
Figure PCTCN2018123421-appb-000011
小于b，其中，dλ′为温度变化引起的中心波长变化，dT为温度变化，b为芯片中心波长λ随温度T变化函数的一次项系数。无热阵列波导光栅模块在工业温度范围内处于过补偿时，在25～85℃具有较好的补偿效果，在-40～25℃补偿效果较差。
针对不同的补偿状态，在不同的温度范围，其补偿效果不同，本发明实施例获取补偿状态后，可以根据不同的补偿状态，在不同的温度范围采取不同的温度调节策略，对无热阵列波导光栅模块的AWG芯片或加热或降温，使无热阵列波导光栅模块始终处于能达到较好补偿效果的目标温度附件或目标温度范围内。
本发明实施例提供的一种无热阵列波导光栅模块的宽温补偿方法，根据无热阵列波导光栅模块处于工业温度范围内的不同的补偿状态，在工业温度范围内的预设温度范围内时，通过所述无热阵列波导光栅模块的温度调节控制装置对所述无热阵列波导光栅模块的AWG芯片进行加热或降温。针对芯片级AWG组件在工业级温度范围内进行温度调节控制，相比有热AWG需要在整个工作温度范围内对整个模块进行恒温处理的方式，本发明实施例方法在预设温度范围内进行处理，功耗更低，响应速度更快，使得波长漂移的控制精度能适应更宽的温度范围，能够满足工业应用需求。
基于上述实施例，对于步骤301，所述基于所述补偿状态，当环境温度在预设温度范围内时，通过所述无热阵列波导光栅模块的温度调节控制装置将所述AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内，具体包括：
通过所述无热阵列波导光栅模块的温度调节控制装置检测所述金属电极的阻值；
根据所述阻值计算所述AWG芯片的工作温度；
基于所述补偿状态，当环境温度处于一个或多个预设温度范围内时，通过所述温度调节控制装置对所述AWG芯片进行加热或降温，以将所述AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内。
本发明实施例的无热阵列波导光栅模块，其AWG芯片背面的金属电极与温度调节控制装置连接，检测金属电极的阻值，即可计算出AWG芯片的工作温度。
基于上述对补偿状态的分析，即对称补偿时，仅在-5～65℃具有较好的补偿效果，在-40～-5℃以及65～85℃温度段内补偿效果较差；欠补偿时，在-40～25℃具有较好的补偿效果，在25～85℃补偿效果较差；过补偿时，在25～85℃具有较好的补偿效果，在-40～25℃补偿效果较差。因此，可以在对称补偿状态时，在两个温度范围-40～-5℃以及65～85℃对AWG芯片进行温度补偿；在欠补偿状态时，在温度范围25～85℃对AWG芯片进行温度补偿；在过补偿状态时，在温度范围-40～25℃对AWG芯片进行温度补偿，使得所述AWG芯片的工作温度趋近于目标温度或维持在目标温度范围，从而可以控制波长漂移。
下面分别对不同的补偿状态下的宽温补偿进行说明。
基于上述实施例，所述补偿状态包括过补偿状态；相应的，
步骤301中，所述基于所述补偿状态，当环境温度处于一个或多个预设温度范围内时，通过所述温度调节控制装置对所述AWG芯片进行加热或降温，以将所述AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内，具体包括：
基于所述过补偿状态，当环境温度在-40～-5℃范围内时，通过所述温度调节控制装置对所述AWG芯片进行加热，使得所述AWG芯片的工作温度趋近于-5℃。
基于前述分析，在过偿状态时，可以在温度范围-40～25℃对AWG芯片进行温度补偿。
本发明实施例在过补偿状态时，仅对环境温度在-40～-5℃范围内时进行温度补偿，具体的温度补偿是，仅通过所述温度调节控制装置对所述AWG芯片进行加热，使得AWG芯片的实际工作温度控制在-5℃左右。当AWG芯片的实际工作温度在-5℃时，其波长漂移较小，可以满足工业应用。
进一步，当AWG芯片的工作温度在-5～25℃范围时，仍然可以通过温度调节控制装置进一步调节温度，继续对AWG芯片加热，使得AWG芯片的实际工作温度接近于25℃，此时的AWG芯片波长漂移更 小，波长漂移控制接近最佳效果。
图5为本发明实施例工业温度范围内过补偿状态下宽温补偿前后的波长漂移曲线对比示意图，通过本发明实施例宽度补偿后的中心波长漂移与温度的关系曲线，与未使用本方法时的中心波长漂移与温度的关系曲线进行对比，可知，本方法可以在工业温度范围内有效的控制AWG芯片的波长漂移，满足工业应用的需要。
基于上述实施例，所述补偿状态包括欠补偿状态；相应的，
步骤301中，所述基于所述补偿状态，当环境温度处于一个或多个预设温度范围内时，通过所述温度调节控制装置对所述AWG芯片进行加热或降温，以将所述AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内，具体包括：
基于所述欠补偿状态，当环境温度在65～85℃范围内时，通过所述温度调节控制装置对所述AWG芯片进行降温，使得所述AWG芯片的工作温度维持在65℃以下。
基于前述分析，在欠偿状态时，可以在温度范围25～85℃对AWG芯片进行温度补偿。
本发明实施例在欠补偿状态时，仅对环境温度在65～85℃范围内时进行温度补偿，具体的温度补偿是，仅通过所述温度调节控制装置对所述AWG芯片进行降温，使得AWG芯片的实际工作温度控制在65℃以下。当AWG芯片的实际工作温度在65℃以下时，其波长漂移较小，可以满足工业应用。
进一步，当AWG芯片的工作温度在25～65℃范围时，仍然可以通过温度调节控制装置进一步调节温度，继续对AWG芯片降温，使得AWG芯片的实际工作温度接近于25℃，此时的AWG芯片波长漂移更小，波长漂移控制接近最佳效果。
图6为本发明实施例工业温度范围内欠补偿状态下宽温补偿前后的波长漂移曲线对比示意图，通过本发明实施例宽度补偿后的中心波长漂移与温度的关系曲线，与未使用本方法时的中心波长漂移与温度 的关系曲线进行对比，可知，本方法可以在工业温度范围内有效的控制AWG芯片的波长漂移，满足工业应用的需要。
基于上述实施例，所述补偿状态包括对称补偿状态；相应的，
步骤301中，所述基于所述补偿状态，当环境温度处于一个或多个预设温度范围内时，通过所述温度调节控制装置对所述AWG芯片进行加热或降温，以将所述AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内，具体包括：
基于所述对称偿状态，当环境温度在-40～-5℃范围内时，通过所述温度调节控制装置对所述AWG芯片进行加热，使得所述AWG芯片的工作温度维持在-5℃以上；当环境温度在65～85℃范围内时，通过所述温度调节控制装置对所述AWG芯片进行降温，使得所述AWG芯片的工作温度维持在65℃以下；
当所述AWG芯片的工作温度在-5～65℃范围内时，通过所述无热阵列波导光栅模块的AWG芯片的结构进行波长调节，以实现波长补偿控制。
基于前述分析，对称补偿状态时，可以在两个温度范围-40～-5℃以及65～85℃对AWG芯片进行温度补偿。
本发明实施例在对称补偿状态时，若工作环境温度一直处于高低温交替变化，即在低温区域-40～-5℃和高温区域65～85℃之间交替变化，则分别在这两个温度区间进行温度补偿，具体的温度补偿是，在低温区域-40～-5℃，通过所述温度调节控制装置对所述AWG芯片进行加热，使得AWG芯片的实际工作温度控制在-5℃左右；在高温区域65～85℃，通过所述温度调节控制装置对所述AWG芯片进行降温，使得所述AWG芯片的工作温度维持在65℃以下。
通过上述在低温区域和高温区域对AWG芯片的温度调节，使得AWG芯片的实际工作温度可以维持在-5～65℃的范围内。
进一步，当AWG芯片的工作温度在-5～65℃范围时，可以通过所述无热阵列波导光栅模块的AWG芯片的结构进行波长调节，以实现精 确的波长控制。具体的，可以通过AWG芯片光路部分的三角槽进行波长调节。
图7为本发明实施例工业温度范围内对称补偿状态下宽温补偿前后的波长漂移曲线对比示意图，通过本发明实施例宽度补偿后的中心波长漂移与温度的关系曲线，与未使用本方法时的中心波长漂移与温度的关系曲线进行对比，可知，本方法可以在工业温度范围内有效的控制AWG芯片的波长漂移，满足工业应用的需要。
综上所述，本发明实施例提供一种无热阵列波导光栅模块，并提供一种基于所述无热阵列波导光栅模块的宽温补偿方法，具有如下有益效果：
本发明实施例在无热AWG芯片的商温应用基础上，对波长漂移进一步控制，使得波长漂移的控制精度能适应更宽的温度范围；只针对芯片级AWG组件在工业级温度范围内进行温度调节控制，相比有热AWG需要在整个工作温度范围内对整个模块进行恒温处理的方式，功耗更低，响应速度更快；采用芯片级的无热AWG器件比较成熟，本发明实施例仅在现有技术上进行分段温度控制即可，比较容易实现，能够满足工业生产和应用需求。
最后应说明的是：以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

Claims (9)

  1. 一种无热阵列波导光栅模块，其特征在于，包括：
    AWG芯片，所述AWG芯片的背面设置有金属电极；
    温度调节控制装置，所述温度调节控制装置与所述金属电极电连接，用于通过所述金属电极的阻值计算所述AWG芯片的工作温度，并在工业温度范围的预设温度范围内将所述AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内。
  2. 根据权利要求1所述的无热阵列波导光栅模块，其特征在于，通过导电胶将所述金属电极与所述温度控制装置固定粘接，以将所述AWG芯片固定在所述温度调节控制装置上。
  3. 根据权利要求1或2所述的无热阵列波导光栅模块，其特征在于，所述温度调节控制装置包括光路基座和设置于所述光路基座上的电路控制部分；
    所述光路基座的热膨胀系数与所述AWG芯片的材料的热膨胀系数相等或者近似相等；
    所述电路控制部分，用于检测所述金属电极的阻值，根据所述阻值计算所述AWG芯片的工作温度，并在在工业温度范围的预设温度范围内对所述AWG芯片进行加热或降温以调节所述AWG芯片的工作温度。
  4. 根据权利要求1所述的无热阵列波导光栅模块，其特征在于，所述金属电极的材质为钛钨合金。
  5. 一种基于权利要1-4任一项所述无热阵列波导光栅模块的宽温补偿方法，其特征在于，包括：
    300，获取所述无热阵列波导光栅模块处于工业温度范围内的补偿状态；
    301，基于所述补偿状态，当环境温度在预设温度范围内时，通过所述无热阵列波导光栅模块的温度调节控制装置将所述AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内；
    其中，所述预设温度范围为所述工业温度范围内的一段温度范围。
  6. 根据权利要求5所述的方法，其特征在于，步骤301具体包括：
    通过所述无热阵列波导光栅模块的温度调节控制装置检测所述金属电极的阻值；
    根据所述阻值计算所述AWG芯片的工作温度；
    基于所述补偿状态，当环境温度处于一个或多个预设温度范围内时，通过所述温度调节控制装置对所述AWG芯片进行加热或降温，以将所述AWG芯片的工作温度调节至目标温度或维持在目标温度的预定范围内。
  7. 根据权利要求5或6所述的方法，其特征在于，所述补偿状态包括过补偿状态，相应的，步骤301具体包括：
    基于所述过补偿状态，当环境温度在-40～-5℃范围内时，通过所述温度调节控制装置对所述AWG芯片进行加热，使得所述AWG芯片的工作温度趋近于-5℃。
  8. 根据权利要求5或6所述的方法，其特征在于，所述补偿状态包括欠补偿状态，相应的，步骤301具体包括：
    基于所述欠补偿状态，当环境温度在65～85℃范围内时，通过所述温度调节控制装置对所述AWG芯片进行降温，使得所述AWG芯片的工作温度维持在65℃以下。
  9. 根据权利要求5或6所述的方法，其特征在于，所述补偿状态包括对称补偿状态，相应的，步骤301具体包括：
    基于所述对称补偿状态，当环境温度在-40～-5℃范围内时，通过所述温度调节控制装置对所述AWG芯片进行加热，使得所述AWG芯片的工作温度维持在-5℃以上；当环境温度在65～85℃范围内时，通过所述温度调节控制装置对所述AWG芯片进行降温，使得所述AWG芯片的工作温度维持在65℃以下；
    当所述AWG芯片的工作温度在-5～65℃范围内时，通过所述无热阵列波导光栅模块的AWG芯片进行波长调节，以实现波长补偿控制。
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