WO2019222969A1 - 一种基于半球形微结构的柔性压力传感器及其制造方法 - Google Patents

一种基于半球形微结构的柔性压力传感器及其制造方法 Download PDF

Info

Publication number
WO2019222969A1
WO2019222969A1 PCT/CN2018/088264 CN2018088264W WO2019222969A1 WO 2019222969 A1 WO2019222969 A1 WO 2019222969A1 CN 2018088264 W CN2018088264 W CN 2018088264W WO 2019222969 A1 WO2019222969 A1 WO 2019222969A1
Authority
WO
WIPO (PCT)
Prior art keywords
carbon nanotube
pdms
flexible
nanotube film
layer
Prior art date
Application number
PCT/CN2018/088264
Other languages
English (en)
French (fr)
Inventor
李晖
谢振文
王磊
Original Assignee
深圳先进技术研究院
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳先进技术研究院 filed Critical 深圳先进技术研究院
Priority to AU2018424374A priority Critical patent/AU2018424374A1/en
Priority to PCT/CN2018/088264 priority patent/WO2019222969A1/zh
Publication of WO2019222969A1 publication Critical patent/WO2019222969A1/zh

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material

Definitions

  • the invention belongs to the technical field of flexible pressure sensors, and particularly relates to a flexible pressure sensor based on a hemispherical microstructure and a manufacturing method thereof.
  • a pyramid groove array mold is made by photolithography and wet etching, and PDMS is poured into the mold to produce a PDMS substrate with a pyramid structure. Then a graphene oxide suspension is prepared, and then a layer-by-layer self-assembly method is used. A graphene film is made on a pyramid-shaped PDMS film. Finally, a graphene PDMS film is bonded to a PET film with an ITO coating, and electrodes are drawn on the film to complete the preparation of a flexible pressure sensor. This pressure sensor can measure a minimum pressure of 1.5Pa, the response time is only 0.2ms, and the sensitivity in the pressure range of 0 to 100Pa is -5.53 / kPa.
  • a rail wafer mold having pyramid-shaped grooves was fabricated using photolithography. Mix PDMS and cross-linking agent in a ratio of 5: 1, and then dilute it with hexane and stir for more than 30 minutes. 100 ⁇ l of the diluted solution was coated on a mold and degassed. A 150-micron-thick PET film with an ITO conductive layer was treated with ultraviolet light for 20 minutes, and then the PET film was placed on a PDMS film in a vacuum environment. And apply a pressure of at least 100 MPa to the film for 4 hours under a temperature of 70 degrees Celsius, and finally connect wires at both ends of the film to make a sensor. Because the sensor has an easily deformed microstructure array, it achieves high-sensitivity measurement, and the sensitivity reaches 0.55 / kPa in the range of 2kPa.
  • SWCNT single-walled carbon nanotube
  • PSS polystyrene
  • the PDMS solution was poured into a mold to make a 500-micron-thick PDMS film, and the PDMS surface was treated with oxygen plasma to obtain a hydrophilic surface.
  • the 100-nm-thick PU-PEDOT: PSS composite elastomer layer was mixed from a solution of polyurethane (60% by weight) and PEDOT: PSS (40% by weight) and deposited on a substrate.
  • the color of the tissue paper changed from white to dark red. After about ten times of repeated application and drying, until the resistance of the thin paper reached 2.5M ⁇ / sq.
  • staggered Ti / Au electrodes were plated. The distance between adjacent electrodes is usually 0.1 mm, and the distance between the electrodes in the middle is 0.5 mm.
  • Two 10x10mm2 contact plates are placed at both ends between the two electrodes and connected to external circuits. Finally, sandwich the film with AuNWs between the PDMS film with staggered electrodes and the blank PDMS film to form a sandwich-like structure.
  • the sensor obtained by this method can measure a small pressure, and has a corresponding time of 17ms, and a sensitivity of 1.14 / kPa, which can realize real-time measurement of human pulse.
  • a flexible pressure sensor based on a graphene microstructure array has a low sensitivity in an excessively high or low pressure range. As a result, the application range is small.
  • a flexible sensor based on a microstructured rubber dielectric layer has a relatively low sensitivity and is only suitable for sensing static pressure.
  • Gold nanowire-based flexible pressure sensors have low transparency, and the sensor has low sensitivity under a large amount of stretching, and even fails due to electrode breakage.
  • the purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, and to provide a flexible pressure sensor based on a hemispherical microstructure and a manufacturing method thereof, which improve the measurement range, sensitivity, and reduce response time of the flexible pressure sensor.
  • the technical solution of the present invention is: a flexible pressure sensor based on a hemispherical microstructure, including a PDMS flexible substrate layer, a carbon nanotube film, and a PDMS flexible film layer.
  • the PDMS flexible substrate layer has a microstructure, and the microstructure is A spherical surface, the side of the PDMS flexible substrate layer having the microstructure is covered with the carbon nanotube film, and the carbon nanotube film is located between the PDMS flexible substrate layer and the PDMS flexible film layer An electrode is connected to the carbon nanotube film.
  • the microstructure is hemispherical.
  • the invention also provides a method for manufacturing a flexible pressure sensor, including the following steps:
  • An electrode is connected to the carbon nanotube film.
  • preparing the PDMS flexible substrate layer includes the following steps:
  • a silicon wafer mold with a hemispherical groove structure is produced by using photo-etching technology
  • preparing the carbon nanotube film includes the following steps:
  • Step 1 Mixing hydrogen chloride and a hydrogen peroxide solution to obtain a mixed solution, and adding carbon nanotube powder to the mixed solution to heat;
  • Step 2 The carbon nanotubes in step 1 are added to the dimethylformamide solution and evacuated and leaked. Finally, a layer of carbon nanotube films adhered to the leakage film is obtained.
  • Step 3 Insert the leakage membrane obliquely into deionized water, and a layer of carbon nanotube film is separated from the carbon nanotube film obtained in step 2.
  • Step 4 Take out the carbon nanotube film floating on the deionized water, and air dry it with a stream of nitrogen.
  • step three a layer of carbon nanotube film with a thickness of 50-60 nm is separated from a carbon nanotube film with a thickness of 200-300 microns.
  • covering the carbon nanotube film with a microstructured surface on the PDMS flexible substrate layer includes the following steps:
  • the carbon nanotube film was transferred onto a PDMS flexible substrate layer with a hemispherical microstructure and heated.
  • preparing the PDMS flexible film layer includes the following steps:
  • the solution was spin-coated on a silicon wafer, heated, and then cooled, and the semi-cured PDMS flexible film layer on the silicon wafer was separated.
  • the semi-cured PDMS flexible film layer is bonded to the carbon nanotube film and the PDMS flexible substrate layer, and heated.
  • the electrodes are drawn on both sides of the carbon nanotube film of the intermediate layer.
  • the invention provides a flexible pressure sensor based on a hemispherical microstructure and a manufacturing method thereof.
  • the flexible pressure sensor uses a hemispherical internal structure, and the measurement range of the sensor is greatly improved. Carbon nanotubes make them have higher sensitivity, and by improving the manufacturing method, making flexible sensors is simpler and more feasible, reducing the difficulty of manufacturing, reducing labor costs, improving the efficiency of manufacturing, and achieving standardized manufacturing processes.
  • FIG. 1 is a schematic sectional view of a flexible pressure sensor based on a hemispherical microstructure according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of a silicon wafer mold used in a method for manufacturing a flexible pressure sensor according to an embodiment of the present invention
  • FIG. 3 is a schematic plan view of a silicon wafer mold used in a method for manufacturing a flexible pressure sensor according to an embodiment of the present invention
  • FIG. 4 is a reference flowchart of a method for manufacturing a flexible pressure sensor according to an embodiment of the present invention.
  • a flexible pressure sensor based on a hemispherical microstructure includes a PDMS flexible substrate layer 1, a carbon nanotube film 2 and a PDMS flexible film layer 3, a PDMS flexible substrate layer 1, and PDMS.
  • Flexible film layer 3 is made of PDMS, PDMS (polydimethylsiloxane) is the English abbreviation of polydimethylsiloxane. It has high transparency, good adhesion to silicon wafers, and good chemical inertness. It has good light transmission, good biocompatibility, and is easy to use. It is bonded to many materials at room temperature, and its structure is highly elastic due to its low Young's modulus.
  • the PDMS flexible substrate layer 1 has a microstructure 11, and the microstructure 11 has a spherical convex shape, that is, the microstructure 11 may have a spherical crown shape. Preferably, the microstructure 11 may have a hemispherical shape.
  • a plurality of microstructures 11 are provided, and the plurality of microstructures 11 are integrally formed in a matrix shape on one side of the PDMS flexible base layer 1.
  • the side of the PDMS flexible substrate 1 having the microstructure 11 is covered with the carbon nanotube film 2, and the carbon nanotube film 2 is uniformly and closely covered with the microstructure 11 and the PDMS flexible substrate layer 1.
  • the carbon nanotube film 2 is located between the PDMS flexible substrate layer 1 and the PDMS flexible film layer 3, and the carbon nanotube film 2 is connected to an electrode.
  • the working principle of the flexible sensor is the piezoresistive effect. When the external environment applies a load to the flexible sensor, the internal hemispherical microstructure 11 is deformed, and the contact area between the hemispherical microstructure 11 and the substrate is reduced, making the flexible pressure The resistance of the sensor becomes smaller, resulting in an increase in the strength of the current.
  • the hemispherical microstructure 11 After the load is released, due to the elastic characteristics of PDMS, the hemispherical microstructure 11 returns to the original state, so the flexible pressure sensor can measure the pressure by measuring the current, and the measurement range and sensitivity of the flexible pressure sensor are improved, and the response time is increased. shorten.
  • An embodiment of the present invention also provides a method for manufacturing a flexible pressure sensor, which can be used to prepare the aforementioned flexible pressure sensor based on a hemispherical microstructure, including the following steps:
  • An electrode is connected to the carbon nanotube film 2.
  • preparing the PDMS flexible substrate layer 1 includes the following steps:
  • a silicon wafer mold 4 having a hemispherical groove structure 41 is fabricated by using a photo-etching technique, and the hemispherical groove structure 41 can be used to mold a hemispherical microstructure 11;
  • the silicon wafer mold 4 and the mixed solution are cooled, and the mixed solution is cooled and solidified to form a PDMS flexible base layer 1.
  • the PDMS flexible base layer 1 is separated from the silicon wafer mold 4 to obtain a hemispherical microstructure. 11 of the PDMS flexible substrate layer 1.
  • preparing the carbon nanotube film 2 includes the following steps:
  • Step 1 Mixing hydrogen chloride and a hydrogen peroxide solution to obtain a mixed solution, and adding carbon nanotube powder to the mixed solution to heat;
  • Step 2 The carbon nanotubes in step 1 are added to a dimethylformamide solution and evacuated and leaked. Finally, a layer of carbon nanotube film 2 attached to the leakage film is obtained.
  • Step 3 The leakage membrane is obliquely inserted into deionized water, and a layer of carbon nanotube film 2 is separated from the carbon nanotube film 2 obtained in step 2.
  • Step 4 The carbon nanotube film 2 floating on the deionized water is taken out and air-dried with a nitrogen stream.
  • a layer of the carbon nanotube film 2 with a thickness of 50-60 nm is separated from the carbon nanotube film 2 with a thickness of 200-300 microns.
  • covering the surface of the PDMS flexible substrate layer 1 with the microstructure 11 with the carbon nanotube film 2 includes the following steps:
  • the carbon nanotube film 2 is transferred onto a PDMS flexible substrate layer 1 having a hemispherical microstructure 11 and then heated.
  • preparing the PDMS flexible film layer 3 includes the following steps:
  • the solution is spin-coated on a silicon wafer, heated, and then cooled, and the semi-cured PDMS flexible film layer 3 on the silicon wafer is separated.
  • the semi-cured PDMS flexible film layer 3 is adhered to the carbon nanotube film 2 and the PDMS flexible substrate layer 1 and is heated.
  • electrodes are drawn on both sides of the carbon nanotube film 2 in the intermediate layer.
  • the first step a silicon wafer mold 4 having a hemispherical groove structure 41 is fabricated by using a photo-etching technique, as shown in FIGS. 2 and 3.
  • Step 2 Mix the polydimethylsiloxane (PDMS) and the cross-linking agent at a weight ratio of 10: 1 for ten minutes, and then apply the solution on the silicon wafer mold 4 having a hemispherical groove structure 41 , Heated at 85 degrees Celsius for 60 minutes.
  • PDMS polydimethylsiloxane
  • the third step the solution temperature obtained above is cooled at room temperature, and the film is separated from the silicon wafer mold 4 after curing to obtain a PDMS film (PDMS flexible substrate layer 1) having a hemispherical microstructure 11.
  • Step 4 Mix hydrogen chloride and hydrogen peroxide solution at a ratio of 3: 1, add 5 grams of carbon nanotube powder to the mixed solution, and heat at 60 degrees Celsius for 4 hours.
  • the fifth step adding the treated carbon nanotubes to the dimethylformamide solution for vacuum leakage, and finally obtaining a carbon nanotube film attached to the leakage film.
  • Step 6 Insert the leakage membrane obliquely into the deionized water at a 45-degree inclination angle, and a layer of 50-60 nm thick carbon nanotube film 2 is separated from the 200-300 micron thick carbon nanotube film.
  • Step 7 Take out the carbon nanotube film 2 floating on the deionized water, and air-dry it with a stream of nitrogen.
  • Step 8 Transfer the carbon nanotube film 2 to a PDMS film (PDMS flexible substrate 1) having a hemispherical microstructure 11 and heat it at 200-220 degrees Celsius for half an hour.
  • a PDMS film PDMS flexible substrate 1 having a hemispherical microstructure 11 and heat it at 200-220 degrees Celsius for half an hour.
  • Step 9 Mix polydimethylsiloxane (PDMS) and cross-linking agent at a weight ratio of 10: 1 and stir for ten minutes, and spin-coated on a silicon wafer at a speed of 900-1100 rpm, and heat it at 85 degrees Celsius for half After a few hours, the solution was cooled at room temperature to separate the semi-cured PDMS film (PDMS flexible film layer 3) on the silicon wafer.
  • PDMS polydimethylsiloxane
  • Step 10 Adhere the semi-cured PDMS flexible film layer 3 to the carbon nanotube film 2 and the PDMS flexible substrate layer 1, and heat them at 30 ° C for 30 minutes to perform tight adhesion (see Figure 1).
  • Step 11 The electrodes are drawn out on both sides of the carbon nanotube film 2 in the intermediate layer, and the production of a flexible pressure sensor is completed.
  • a flexible pressure sensor based on a hemispherical microstructure 11 and a method for manufacturing the same are provided in the embodiments of the present invention.
  • the flexible pressure sensor uses a hemispherical internal structure, and the measurement range of the sensor is greatly improved.
  • the conductivity of carbon nanotubes makes them have higher sensitivity, and by improving the production method, making flexible sensors is simpler and more feasible, reducing the difficulty of production, reducing labor costs, improving the efficiency of production, and achieving standardization Craftsmanship.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

本发明适用于柔性压力传感器技术领域,公开了一种基于半球形微结构的柔性压力传感器及其制造方法。柔性压力传感器包括PDMS柔性基底层、碳纳米管薄膜和PDMS柔性薄膜层,所述PDMS柔性基底层具有微结构,所述微结构呈球面凸起状,所述PDMS柔性基底层具有所述微结构的一面覆盖有所述碳纳米管薄膜,且所述碳纳米管薄膜位于所述PDMS柔性基底层和所述PDMS柔性薄膜层之间,所述碳纳米管薄膜连接有电极。制造方法用于制造上述柔性压力传感器。本发明所提供的一种基于半球形微结构的柔性压力传感器及其制造方法,其提高了柔性压力传感器的测量范围、灵敏度以及减少响应时间。

Description

一种基于半球形微结构的柔性压力传感器及其制造方法 技术领域
本发明属于柔性压力传感器技术领域,尤其涉及一种基于半球形微结构的柔性压力传感器及其制造方法。
背景技术
随着社会的发展,柔性传感器件为社会生活的多个方面带来了革命性变化,因其在柔性方面的优势,逐渐被应用到机器人,可穿戴电子设备,人机交互,智能蒙皮等领域。相对于传统的传感器,柔性传感器的在性能方面还存在着很多缺陷,目前的柔性传感器柔性还存在着灵敏度不高,测量范围小,滞后现象较大以及容易受到外部环境噪声的干扰等问题。
最近几年,随着经济的快速发张,人们生活品质大大提高,促进了可穿戴的柔性传感器快速的发展,人们希望能将传感器件舒适地穿戴在身上,或者与皮肤表面进行直接的贴附,从而获取脉搏和血压等健康信息。此外,柔性传感器还是人类仿生假肢以及智能机器人感知外界环境的重要组成部件。柔性压力传感器的研究成为了今年来的研究热点,前人采用多种不同的手段提高了柔性压力传感器的性能指标,如灵敏度、量程、重复性以及一致性等等,拓展了柔性压力传感器的应用领域。
近年来的制作柔性压力传感器的工艺主要有以下几种:
1.    通过光刻蚀和湿法刻蚀制作金字塔凹槽阵列模具,将PDMS倒入模具中,制作出具有金字塔结构的PDMS基底,然后制备氧化石墨烯悬浮液,然后采用层层自组装的方法在具有金字塔结构的PDMS薄膜上制作石墨烯薄膜,最后将带有石墨烯PDMS薄膜与带有ITO涂层的PET薄膜贴合上,在薄膜上引出电极,便完成柔性压力传感器的制备。此压力传感器最小可以测量1.5Pa的压力,响应时间只有0.2毫秒,在0到100Pa的压力范围上的灵敏度为-5.53/kPa。
2.    采用光刻技术制作出具有金字塔形凹槽的轨晶片模具。以5:1的比例混合PDMS和交联剂,再用己烷将其稀释并搅拌30分钟以上。将稀释后的100微升的溶液涂覆在模具上并进行除气,将一片150微米厚带有ITO导电层的PET薄膜用紫外线处理20分钟,然后在真空环境下将PET薄膜放在PDMS薄膜上,并在70摄氏度的环境下对薄膜施加至少100MPa的压力堆叠4小时,最后在薄膜两端接上导线制成传感器。由于传感器具有易于变形的微结构阵列,因此实现了高灵敏度的测量,在2kPa的范围内灵敏度达到0.55/kPa。
3.    将10、30、50毫克的单壁碳纳米管(SWCNT)粉与10mL的去离子水混合制作不同浓度的SWCNT溶液,接着混合0.1毫升的聚苯乙烯(PSS)溶液进行30分钟的超声降解。把PDMS溶液倒进模具中制作出500微米厚的PDMS薄膜,对PDMS表面采用氧气等离子进行处理得到亲水表面。100纳米厚的PU-PEDOT:PSS的复合弹性体层由聚氨酯(60%的重量)和PEDOT:PSS(40%的重量)的溶液混合而成并将其沉积在基板上。以150摄氏度的退火一小时,采用三乙氧硅烷溶液对复合膜表面进行30分钟的自组装(SAM),从而在PDMS基体上获得SWCNT溶液涂层。在SAM处理后,将SWCNT溶液滴在基底表面上并以1000rpm转速旋涂10分钟,得到厚度为1.2微米的薄膜。然后将样品置于100摄氏度的环境下退火1个小时。最后再涂上一层PU/PEDOT:PSS溶液并在100摄氏度下退火一小时,完成传感器的制备。该传感器具有很高的透明度,可以达到72%的透明度,并且具有很好的重复性,灵敏系数达到106.
4.将44mg的四氯金酸三水合物加入到40ml的己烷中,接着加入1.5ml的油胺,金盐完全溶解后,在上述溶液中加入了2.1毫升的三异丙基硅烷。将混合后的溶液在室温下静置两天,知道溶液颜色由黄色变为深红色,表明金纳米线的形成。用乙醇和己烷(体积比2:1)的混合溶液进行多次离心和清洗以清除残留的化合物,最后浓缩到2ml的氯仿溶液中。将8x8mm2的金伯利(Kimberly Clark)薄纸浸泡在金纳米线的氯仿溶液中,在氯仿蒸发后,薄纸的颜色由白色变为深红色。通过大约十次的重复涂抹和干燥,直到薄纸的电阻到2.5MΩ/sq. 在30x27mm2的PDMS基底镀上交错的Ti/Au电极。相邻电极的间距通常为0.1毫米,中间的电极间距为0.5毫米。两个10x10mm2接触板被放置在两个电极间的两端与外部电路相连。最后用带有交错电极的PDMS薄膜与空白的PDMS薄膜把带有AuNWs的薄膜包夹在中间,形成三文治一样的结构。这种方法得到的传感器可以测量很小的压力,并且有着17ms的相应时间,以及1.14/kPa的灵敏度,可以实现对人类脉搏的实时测量。
尽管上述的柔性传感器可以实现对外界压力的测量,可是还存在一些缺点。
1.    基于石墨烯微结构阵列的柔性压力传感器在过高或过低的压力范围中,其灵敏度较低。导致应用范围较小。
2.    基于微结构橡胶介电层的柔性传感器的灵敏度比较低,只适用于感测静态压力。
3.    基于压阻效应的柔性传感器在较大的拉伸量下,会出现响应滞后,难以恢复原状。
4.    基于金纳米线的柔性压力传感器透明度较低,传感器在较大拉伸量下其灵敏度较低,甚至由于电极的断裂而失效。
技术问题
本发明的目的在于克服上述现有技术的不足,提供了一种基于半球形微结构的柔性压力传感器及其制造方法,其提高了柔性压力传感器的测量范围、灵敏度以及减少响应时间。
技术解决方案
本发明的技术方案是:一种基于半球形微结构的柔性压力传感器,包括PDMS柔性基底层、碳纳米管薄膜和PDMS柔性薄膜层,所述PDMS柔性基底层具有微结构,所述微结构呈球面凸起状,所述PDMS柔性基底层具有所述微结构的一面覆盖有所述碳纳米管薄膜,且所述碳纳米管薄膜位于所述PDMS柔性基底层和所述PDMS柔性薄膜层之间,所述碳纳米管薄膜连接有电极。
可选地,所述微结构呈半球形。
本发明还提供了一种柔性压力传感器的制造方法,包括以下步骤:
制备具有微结构呈球面凸起状的PDMS柔性基底层;
制备碳纳米管薄膜;
于所述PDMS柔性基底层具有微结构的表面覆盖所述碳纳米管薄膜;
制备PDMS柔性薄膜层并将所述PDMS柔性薄膜层覆盖于所述碳纳米管薄膜;
于所述碳纳米管薄膜连接电极。
可选地,其中,制备所述PDMS柔性基底层包括以下步骤:
采用光蚀刻技术制作出具有半球形凹槽结构的硅晶片模具;
将PDMS与交联剂以10:1的重量比混合搅拌得到混合溶液,接着将所述混合溶液涂覆于具有半球形凹槽的所述硅晶片模具;
加热所述硅晶片模具和所述混合溶液;
冷却所述硅晶片模具和所述混合溶液,所述混合溶液冷却固化之后形成PDMS柔性基底层,将PDMS柔性基底层从所述硅晶片模具中分离出来,得到具有半球形微结构的PDMS柔性基底层。
可选地,其中,制备所述碳纳米管薄膜包括以下步骤:
步骤一:把氯化氢与过氧化氢溶液混合得到混合液,将碳纳米管粉末加入混合液中加热;
步骤二:将步骤一中的碳纳米管加入二甲基甲酰胺溶液中抽真空渗漏,最后得到一层附着在渗漏膜上的碳纳米管薄膜。
步骤三:将渗漏膜斜插入去离子水中,一层碳纳米管薄膜从步骤二中得到的碳纳米管薄膜上分离下来。
步骤四:将漂浮在去离子水上的碳纳米管薄膜取出,用氮气流风干。
可选地,在所述步骤三中,一层50-60nm厚的碳纳米管薄膜从200-300微米厚的碳纳米管薄膜上分离下来。
可选地,于所述PDMS柔性基底层具有微结构的表面覆盖所述碳纳米管薄膜包括以下步骤:
将碳纳米管薄膜转移至具有半球形微结构的PDMS柔性基底层上后加热。
可选地,其中,制备PDMS柔性薄膜层包括以下步骤:
将PDMS与交联剂以10:1的重量比混合搅拌得到溶液;
将溶液旋涂在硅片上后加热,之后冷却,将硅片上的半固化的PDMS柔性薄膜层分离出来。
可选地,将半固化的PDMS柔性薄膜层与碳纳米管薄膜和所述PDMS柔性基底层粘合,并加热。
可选地,粘合后,在中间层的碳纳米管薄膜的两侧引出电极。
有益效果
本发明所提供的一种基于半球形微结构的柔性压力传感器及其制造方法,其柔性压力传感器采用了半球形的内部结构,传感器的测量范围得到了很大的改善,结合具有高导电率的碳纳米管,使得其具有更高的灵敏度,并且通过改善制作方法,使得柔性传感器的制作更为简单可行,降低了制作难度,减少了人工成本,提高了制作的效率,实现了标准化制作工艺。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的一种基于半球形微结构的柔性压力传感器的剖面示意图;
图2是本发明实施例提供的柔性压力传感器的制造方法中所采用的硅晶片模具的剖面示意图;
图3是本发明实施例提供的柔性压力传感器的制造方法中所采用的硅晶片模具的平面示意图;
图4是本发明实施例提供的柔性压力传感器的制造方法的参考流程图。
本发明的实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
需要说明的是,当元件被称为“固定于”或“设置于”另一个元件,它可以直接在另一个元件上或者可能同时存在居中元件。当一个元件被称为是“连接于”另一个元件,它可以是直接连接到另一个元件或者可能同时存在居中元件。
还需要说明的是,本发明实施例中的左、右、上、下等方位用语,仅是互为相对概念或是以产品的正常使用状态为参考的,而不应该认为是具有限制性的。
如图1所示,本发明实施例提供的一种基于半球形微结构的柔性压力传感器,包括PDMS柔性基底层1、碳纳米管薄膜2和PDMS柔性薄膜层3,PDMS柔性基底层1和PDMS柔性薄膜层3均采用PDMS制成, PDMS (polydimethylsiloxane)为聚二甲基硅氧烷的英文缩写,透明度高,同硅片之间具有良好的粘附性,而且具有良好的化学惰性,其透光性良好、生物相容性佳、易与多种材质室温接合、以及因为低杨氏模量致使结构高弹性。所述PDMS柔性基底层1具有微结构11,所述微结构11呈球面凸起状,即微结构11可以呈球冠状,优选地,微结构11可以呈半球形。微结构11设置有多个,多个微结构11呈矩阵状一体成型于PDMS柔性基底层1的一面。所述PDMS柔性基底层1具有所述微结构11的一面覆盖有所述碳纳米管薄膜2,碳纳米管薄膜2均匀、贴合覆盖于微结构11和PDMS柔性基底层1。且所述碳纳米管薄膜2位于所述PDMS柔性基底层1和所述PDMS柔性薄膜层3之间,所述碳纳米管薄膜2连接有电极。该柔性传感器的工作原理是压阻效应,当外部环境对柔性传感器施加载荷的时候,内部半球形的微结构11发生形变,半球形的微结构11与基板之间的接触面积减少,使得柔性压力传感器的电阻变小,从而导致电流强度的增加。而当载荷释放之后,由于PDMS的弹性特性,半球形的微结构11恢复到初始状态,所以柔性压力传感器通过测量电流便可以实现压力的测量,且柔性压力传感器的测量范围和灵敏度提高,响应时间缩短。
本发明实施例还提供了一种柔性压力传感器的制造方法,可以用于制备上述一种基于半球形微结构的柔性压力传感器,包括以下步骤:
制备具有微结构11呈球面凸起状的PDMS柔性基底层1;
制备碳纳米管薄膜2;
于所述PDMS柔性基底层1具有微结构11的表面覆盖所述碳纳米管薄膜2;
制备PDMS柔性薄膜层3并将所述PDMS柔性薄膜层3覆盖于所述碳纳米管薄膜2;
于所述碳纳米管薄膜2连接电极。
具体地,其中,制备所述PDMS柔性基底层1包括以下步骤:
如图2和图3所示,采用光蚀刻技术制作出具有半球形凹槽结构41的硅晶片模具4,半球形凹槽结构41可以用于成型半球形微结构11;
将PDMS与交联剂以10:1的重量比混合搅拌得到混合溶液,接着将所述混合溶液涂覆于具有半球形凹槽41的所述硅晶片模具4;
加热所述硅晶片模具4和所述混合溶液;
冷却所述硅晶片模具4和所述混合溶液,所述混合溶液冷却固化之后形成PDMS柔性基底层1,将PDMS柔性基底层1从所述硅晶片模具4中分离出来,得到具有半球形微结构11的PDMS柔性基底层1。
具体地,其中,制备所述碳纳米管薄膜2包括以下步骤:
步骤一:把氯化氢与过氧化氢溶液混合得到混合液,将碳纳米管粉末加入混合液中加热;
步骤二:将步骤一中的碳纳米管加入二甲基甲酰胺溶液中抽真空渗漏,最后得到一层附着在渗漏膜上的碳纳米管薄膜2。
步骤三:将渗漏膜斜插入去离子水中,一层碳纳米管薄膜2从步骤二中得到的碳纳米管薄膜2上分离下来。
步骤四:将漂浮在去离子水上的碳纳米管薄膜2取出,用氮气流风干。
具体地,在所述步骤三中,一层50-60nm厚的碳纳米管薄膜2从200-300微米厚的碳纳米管薄膜2上分离下来。
具体地,于所述PDMS柔性基底层1具有微结构11的表面覆盖所述碳纳米管薄膜2包括以下步骤:
将碳纳米管薄膜2转移至具有半球形微结构11的PDMS柔性基底层1上后加热。
具体地,其中,制备PDMS柔性薄膜层3包括以下步骤:
将PDMS与交联剂以10:1的重量比混合搅拌得到溶液;
将溶液旋涂在硅片上后加热,之后冷却,将硅片上的半固化的PDMS柔性薄膜层3分离出来。
具体地,半固化的PDMS柔性薄膜层3与碳纳米管薄膜2和所述PDMS柔性基底层1粘合,并加热。
具体地,粘合后,在中间层的碳纳米管薄膜2两侧引出电极。
具体应用可以参考以下流程,如图1所示:
第一步:采用光蚀刻技术制作出具有半球形凹槽结构41的硅晶片模具4,如图2和图3所示。
第二步:将聚二甲基硅氧烷(PDMS)与交联剂以10:1的重量比混合搅拌十分钟,接着将溶液涂覆在具有半球形凹槽结构41的硅晶片模具4上,在85摄氏度下加热60分钟。
第三步:将上述得到的溶液温度置于室温下冷却,固化之后将薄膜从硅晶片模具4中分离出来,得到具有半球形微结构11的PDMS薄膜(PDMS柔性基底层1)。
第四步:把氯化氢与过氧化氢溶液以3:1的比例混合,将5克碳纳米管粉末加入混合溶液中,在60摄氏度下加热4小时。
第五步:将处理后的碳纳米管加入二甲基甲酰胺溶液中抽真空渗漏,最后得到一层附着在渗漏膜上的碳纳米管薄膜。
第六步:将渗漏膜以45度倾角斜插入去离子水中,一层50-60nm厚的碳纳米管薄膜2从200-300微米厚的碳纳米管薄膜上分离下来。
第七步:将漂浮在去离子水上的碳纳米管薄膜2取出,用氮气流风干。
第八步:转移碳纳米管薄膜2到具有半球形微结构11的PDMS薄膜(PDMS柔性基底层1)上,在200-220摄氏度下加热半小时。
第九步:将聚二甲基硅氧烷(PDMS)与交联剂以10:1的重量比混合搅拌十分钟,并且以900-1100rpm转速旋涂在硅片上,在85摄氏度下加热半个小时,之后将溶液温度置于室温下冷却,将硅片上的半固化的PDMS薄膜(PDMS柔性薄膜层3)分离出来。
第十步:将半固化的PDMS柔性薄膜层3与碳纳米管薄膜2和PDMS柔性基底层1粘合,在摄氏度下加热30分钟,进行紧密的粘合(如图1)。
第十一步:在中间层的碳纳米管薄膜2两侧引出电极,完成了柔性压力传感器制作。
本发明实施例所提供的一种基于半球形微结构11的柔性压力传感器及其制造方法,其柔性压力传感器采用了半球形的内部结构,传感器的测量范围得到了很大的改善,结合具有高导电率的碳纳米管,使得其具有更高的灵敏度,并且通过改善制作方法,使得柔性传感器的制作更为简单可行,降低了制作难度,减少了人工成本,提高了制作的效率,实现了标准化制作工艺。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换或改进等,均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种基于半球形微结构的柔性压力传感器,其特征在于,包括PDMS柔性基底层、碳纳米管薄膜和PDMS柔性薄膜层,所述PDMS柔性基底层具有微结构,所述微结构呈球面凸起状,所述PDMS柔性基底层具有所述微结构的一面覆盖有所述碳纳米管薄膜,且所述碳纳米管薄膜位于所述PDMS柔性基底层和所述PDMS柔性薄膜层之间,所述碳纳米管薄膜连接有电极。
  2. 如权利要求1所述的一种基于半球形微结构的柔性压力传感器,其特征在于,所述微结构呈半球形。
  3. 一种柔性压力传感器的制造方法,其特征在于,包括以下步骤:
    制备具有微结构呈球面凸起状的PDMS柔性基底层;
    制备碳纳米管薄膜;
    于所述PDMS柔性基底层具有微结构的表面覆盖所述碳纳米管薄膜;
    制备PDMS柔性薄膜层并将所述PDMS柔性薄膜层覆盖于所述碳纳米管薄膜;
    于所述碳纳米管薄膜连接电极。
  4. 如权利要求3所述的一种柔性压力传感器的制造方法,其特征在于,
    其中,制备所述PDMS柔性基底层包括以下步骤:
    采用光蚀刻技术制作出具有半球形凹槽结构的硅晶片模具;
    将PDMS与交联剂以10:1的重量比混合搅拌得到混合溶液,接着将所述混合溶液涂覆于具有半球形凹槽的所述硅晶片模具;
    加热所述硅晶片模具和所述混合溶液;
    冷却所述硅晶片模具和所述混合溶液,所述混合溶液冷却固化之后形成PDMS柔性基底层,将PDMS柔性基底层从所述硅晶片模具中分离出来,得到具有半球形微结构的PDMS柔性基底层。
  5. 如权利要求3或4所述的一种柔性压力传感器的制造方法,其特征在于,
    其中,制备所述碳纳米管薄膜包括以下步骤:
    步骤一:把氯化氢与过氧化氢溶液混合得到混合液,将碳纳米管粉末加入混合液中加热;
    步骤二:将步骤一中的碳纳米管加入二甲基甲酰胺溶液中抽真空渗漏,最后得到一层附着在渗漏膜上的碳纳米管薄膜;
    步骤三:将渗漏膜斜插入去离子水中,一层碳纳米管薄膜从步骤二中得到的碳纳米管薄膜上分离下来;
    步骤四:将漂浮在去离子水上的碳纳米管薄膜取出,用氮气流风干。
  6. 如权利要求5所述的一种柔性压力传感器的制造方法,其特征在于,在所述步骤三中,一层50-60nm厚的碳纳米管薄膜从200-300微米厚的碳纳米管薄膜上分离下来。
  7. 如权利要求3所述的一种柔性压力传感器的制造方法,其特征在于,于所述PDMS柔性基底层具有微结构的表面覆盖所述碳纳米管薄膜包括以下步骤:
    将碳纳米管薄膜转移至具有半球形微结构的PDMS柔性基底层上后加热。
  8. 如权利要求3所述的一种柔性压力传感器的制造方法,其特征在于,
    其中,制备PDMS柔性薄膜层包括以下步骤:
    将PDMS与交联剂以10:1的重量比混合搅拌得到溶液;
    将溶液旋涂在硅片上后加热,之后冷却,将硅片上的半固化的PDMS柔性薄膜层分离出来。
  9. 如权利要求8所述的一种柔性压力传感器的制造方法,其特征在于,将半固化的PDMS柔性薄膜层与碳纳米管薄膜和所述PDMS柔性基底层粘合,并加热。
  10. 如权利要求9所述的一种柔性压力传感器的制造方法,其特征在于,粘合后,在中间层的碳纳米管薄膜的两侧引出电极。
PCT/CN2018/088264 2018-05-24 2018-05-24 一种基于半球形微结构的柔性压力传感器及其制造方法 WO2019222969A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2018424374A AU2018424374A1 (en) 2018-05-24 2018-05-24 Flexible pressure sensor based on hemispheric microstructure and fabrication method therefor
PCT/CN2018/088264 WO2019222969A1 (zh) 2018-05-24 2018-05-24 一种基于半球形微结构的柔性压力传感器及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/088264 WO2019222969A1 (zh) 2018-05-24 2018-05-24 一种基于半球形微结构的柔性压力传感器及其制造方法

Publications (1)

Publication Number Publication Date
WO2019222969A1 true WO2019222969A1 (zh) 2019-11-28

Family

ID=68615540

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/088264 WO2019222969A1 (zh) 2018-05-24 2018-05-24 一种基于半球形微结构的柔性压力传感器及其制造方法

Country Status (2)

Country Link
AU (1) AU2018424374A1 (zh)
WO (1) WO2019222969A1 (zh)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111060238A (zh) * 2019-12-26 2020-04-24 浙江清华柔性电子技术研究院 电阻式柔性压力传感器及其制备方法
CN112378554A (zh) * 2020-10-26 2021-02-19 北京机械设备研究所 具有压敏结构的柔性压力传感器
CN113465795A (zh) * 2021-07-01 2021-10-01 西北工业大学 一种柔性压力传感结构及柔性压力传感器
CN113865626A (zh) * 2021-09-02 2021-12-31 浙江大学 一种柔性温湿度集成传感器及其制造方法
CN114001845A (zh) * 2021-10-22 2022-02-01 北京航空航天大学杭州创新研究院 基于高密度微结构阵列电极的力敏传感器的制备方法
CN114199424A (zh) * 2021-11-29 2022-03-18 江苏大学 一种压阻传感器及其制备工艺
CN114250547A (zh) * 2021-12-24 2022-03-29 济南大学 一种柔性气流传感材料、传感器及其制备方法
CN114323367A (zh) * 2021-12-07 2022-04-12 华南理工大学 一种柔性桥式开关传感器
CN114440759A (zh) * 2022-01-26 2022-05-06 浙江大学 一种基于封装材料结构的柔性拉伸应变传感器
CN114720027A (zh) * 2022-04-07 2022-07-08 杭州电子科技大学 一种基于蜂窝状仿生微结构的柔性压力传感器及制备方法
CN115387407A (zh) * 2022-09-05 2022-11-25 山东高速集团有限公司创新研究院 用于挡土墙预警的全覆盖式柔性感知薄膜、系统及方法
EP4193134B1 (en) * 2020-08-10 2024-05-01 Peratech Holdco Ltd Force sensing device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101554543B1 (ko) * 2015-02-17 2015-09-21 고려대학교 산학협력단 압력센서
CN105330858A (zh) * 2015-11-20 2016-02-17 青岛理工大学 聚苯胺@碳纳米管导电压敏复合材料及其应用
CN106370327A (zh) * 2016-10-08 2017-02-01 中国科学院深圳先进技术研究院 一种柔性压力传感器及其制作方法
CN106531733A (zh) * 2016-12-21 2017-03-22 清华大学 一种柔性压力传感器及其制备方法
CN106644189A (zh) * 2016-12-13 2017-05-10 中国科学院深圳先进技术研究院 柔性压力传感器及其制备方法
CN106768520A (zh) * 2016-12-28 2017-05-31 中国科学院深圳先进技术研究院 压力传感器及其制备方法
CN106813811A (zh) * 2017-01-20 2017-06-09 南京大学 一种高灵敏度电容型柔性压力传感器
CN207366110U (zh) * 2017-01-04 2018-05-15 无锡格菲电子薄膜科技有限公司 一种高灵敏压力传感器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101554543B1 (ko) * 2015-02-17 2015-09-21 고려대학교 산학협력단 압력센서
CN105330858A (zh) * 2015-11-20 2016-02-17 青岛理工大学 聚苯胺@碳纳米管导电压敏复合材料及其应用
CN106370327A (zh) * 2016-10-08 2017-02-01 中国科学院深圳先进技术研究院 一种柔性压力传感器及其制作方法
CN106644189A (zh) * 2016-12-13 2017-05-10 中国科学院深圳先进技术研究院 柔性压力传感器及其制备方法
CN106531733A (zh) * 2016-12-21 2017-03-22 清华大学 一种柔性压力传感器及其制备方法
CN106768520A (zh) * 2016-12-28 2017-05-31 中国科学院深圳先进技术研究院 压力传感器及其制备方法
CN207366110U (zh) * 2017-01-04 2018-05-15 无锡格菲电子薄膜科技有限公司 一种高灵敏压力传感器
CN106813811A (zh) * 2017-01-20 2017-06-09 南京大学 一种高灵敏度电容型柔性压力传感器

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111060238A (zh) * 2019-12-26 2020-04-24 浙江清华柔性电子技术研究院 电阻式柔性压力传感器及其制备方法
EP4193134B1 (en) * 2020-08-10 2024-05-01 Peratech Holdco Ltd Force sensing device
CN112378554A (zh) * 2020-10-26 2021-02-19 北京机械设备研究所 具有压敏结构的柔性压力传感器
CN113465795A (zh) * 2021-07-01 2021-10-01 西北工业大学 一种柔性压力传感结构及柔性压力传感器
CN113465795B (zh) * 2021-07-01 2023-12-29 西北工业大学 一种柔性压力传感结构及柔性压力传感器
CN113865626A (zh) * 2021-09-02 2021-12-31 浙江大学 一种柔性温湿度集成传感器及其制造方法
CN113865626B (zh) * 2021-09-02 2024-03-19 浙江大学 一种柔性温湿度集成传感器及其制造方法
CN114001845A (zh) * 2021-10-22 2022-02-01 北京航空航天大学杭州创新研究院 基于高密度微结构阵列电极的力敏传感器的制备方法
CN114199424A (zh) * 2021-11-29 2022-03-18 江苏大学 一种压阻传感器及其制备工艺
CN114323367B (zh) * 2021-12-07 2023-08-22 华南理工大学 一种柔性桥式开关传感器
CN114323367A (zh) * 2021-12-07 2022-04-12 华南理工大学 一种柔性桥式开关传感器
CN114250547A (zh) * 2021-12-24 2022-03-29 济南大学 一种柔性气流传感材料、传感器及其制备方法
CN114440759B (zh) * 2022-01-26 2023-01-10 浙江大学 一种基于封装材料结构的柔性拉伸应变传感器
CN114440759A (zh) * 2022-01-26 2022-05-06 浙江大学 一种基于封装材料结构的柔性拉伸应变传感器
CN114720027A (zh) * 2022-04-07 2022-07-08 杭州电子科技大学 一种基于蜂窝状仿生微结构的柔性压力传感器及制备方法
CN115387407A (zh) * 2022-09-05 2022-11-25 山东高速集团有限公司创新研究院 用于挡土墙预警的全覆盖式柔性感知薄膜、系统及方法

Also Published As

Publication number Publication date
AU2018424374A1 (en) 2020-08-13

Similar Documents

Publication Publication Date Title
WO2019222969A1 (zh) 一种基于半球形微结构的柔性压力传感器及其制造方法
AU2018102177A4 (en) Flexible pressure sensor based on hemispheric microstructure and fabrication method therefor
CN108318161B (zh) 可穿戴压力传感器及其制造方法
CN110526198B (zh) 一种基于半球形微结构的柔性压力传感器及其制造方法
Wen et al. Emerging flexible sensors based on nanomaterials: recent status and applications
CN108225625B (zh) 柔性压力传感器及其制备方法
CN106908176B (zh) 具有微结构化的多相介电层电容式压力传感器及其制法
Zhu et al. Softening gold for elastronics
Gong et al. Multiscale soft–hard interface design for flexible hybrid electronics
Tan et al. Flexible pressure sensors based on bionic microstructures: from plants to animals
CN109115376A (zh) 一种电容式柔性压力传感器及其制备方法
CN110579297A (zh) 基于MXene仿生皮肤结构的高灵敏度柔性压阻传感器
Min et al. Tough Carbon Nanotube‐Implanted Bioinspired Three‐Dimensional Electrical Adhesive for Isotropically Stretchable Water‐Repellent Bioelectronics
CN110063724B (zh) 柔性生物电极及其制备方法
WO2021068273A1 (zh) 以砂纸表面微结构为模板的电容式应变传感器制作方法
CN208765878U (zh) 一种电容式柔性压力传感器
WO2021238042A1 (zh) 液态金属薄膜电极的制造方法及柔性压力传感器
CN106959176B (zh) 一种柔性压力传感器及其制备方法
Akhtar et al. Highly aligned carbon nanotubes and their sensor applications
WO2021253278A1 (zh) 一种触觉传感器、制备方法及包括触觉传感器的智能设备
Lu et al. Highly sensitive interlocked piezoresistive sensors based on ultrathin ordered nanocone array films and their sensitivity simulation
Madhavan Flexible and stretchable strain sensors fabricated by inkjet printing of silver nanowire-ecoflex composites
CN113733697B (zh) 一种高灵敏度宽传感范围的柔性复合薄膜及其应用
CN111766001A (zh) 尺度可控的微皱纹金薄膜柔性裂纹传感器
CN110558968B (zh) 一种微凝胶可穿戴传感器及其制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18920063

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2018424374

Country of ref document: AU

Date of ref document: 20180524

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18920063

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 14/05/2021)

122 Ep: pct application non-entry in european phase

Ref document number: 18920063

Country of ref document: EP

Kind code of ref document: A1