WO2019216331A1

WO2019216331A1 - Sputtering device, method for manufacturing multilayered film, film forming device, and method for using film forming device

Info

Publication number: WO2019216331A1
Application number: PCT/JP2019/018339
Authority: WO
Inventors: 稲葉　輝明
Original assignee: 株式会社小糸製作所
Priority date: 2018-05-09
Filing date: 2019-05-08
Publication date: 2019-11-14
Also published as: JPWO2019216331A1

Abstract

This sputtering device 10 is provided with: a placement unit on which a sample, in which a film is to be formed, is placed; a target 24 having a plurality of areas composed of different kinds of metals or alloys; a magnetron unit 14 provided on a rear surface side of the target; a power source 28 which applies a voltage between the sample and the target; and a movement mechanism 32 configured such that the target 24 and the magnetron unit 14 relatively move while facing each other. The magnetron unit 14 is configured to be able to selectively face the plurality of respective areas of the target 24.

Description

Sputtering apparatus, multilayer film manufacturing method, film forming apparatus, and method of using film forming apparatus

The present invention relates to a technique for producing a multilayer film and a film forming apparatus for forming a thin film such as a reflective film.

Conventionally, a sputtering apparatus has been devised as an apparatus for forming a thin film on the surface of a sample such as a substrate or a base material. In addition, a magnetron sputtering apparatus has been devised that has a relatively high film formation rate and little plasma damage to the sample (see Patent Document 1).

Also, a reflective component having a reflective surface on its surface is produced by forming a metal thin film on the surface of a substrate (resin, glass, metal, etc.). As a method of forming a metal thin film, a method of forming a metal thin film by fixing a base material (work) in a chamber and attaching a material evaporated (sublimated) from a sputtering target or an evaporation source to the surface of the base material is known. (See Patent Document 2).

JP 2006-265681 A JP 2001-262316 A

When forming a multilayer film with the above-described sputtering apparatus, it is usually necessary to prepare a plurality of sputtering apparatuses and to form a thin film one by one with each apparatus. For this reason, the manufacturing efficiency is poor, and the cost of the entire manufacturing apparatus increases.

In addition, if a single vacuum film forming apparatus is used to form films on various workpieces of different sizes and shapes, a vacuum chamber that matches the largest workpiece is required. For this reason, when the workpiece is replaced, the time required for evacuating the vacuum chamber to a predetermined degree of vacuum increases, and the operation rate of the film forming apparatus decreases.

The present invention has been made in view of such circumstances, and one of exemplary purposes thereof is to provide a new technique for forming a multilayer film with a simple configuration.

Another example purpose is to provide a new technique for improving the operating rate of the film forming apparatus.

In order to solve the above-described problems, a sputtering apparatus according to an aspect of the present invention includes a placement unit on which a sample to be deposited is placed, a target having a plurality of regions made of different types of metals or alloys, A magnetron unit provided on the back side of the target, a power source for applying a voltage between the sample and the target, and a moving mechanism configured to move relative to each other while the target and the magnetron unit face each other. . The magnetron unit is configured to selectively face each of the plurality of regions of the target.

According to this aspect, by performing sputtering in a state where the first region and the magnetron unit face each other among the plurality of regions of the target, a layer containing the first type metal or alloy is formed, and the plurality of regions of the target By performing sputtering in a state where the second region and the magnetron unit face each other, a layer containing the second type metal or alloy can be formed. Moreover, by performing sputtering in a state where both the first region and the second region of the plurality of regions of the target face the magnetron unit, the first type metal or alloy and the second type metal or A layer containing an alloy can be formed.

The target may have a first region made of aluminum and a second region made of chromium. Thereby, a multilayer film having a layer containing aluminum and a second layer containing chromium can be formed.

Another aspect of the present invention is a method for producing a multilayer film. In this method, a first region formed by sputtering a first region of a plurality of regions is formed by moving a magnetron unit relative to a target having a plurality of regions made of different types of metals or alloys. And a second layer formed by sputtering the second region of the plurality of regions.

According to this aspect, by performing sputtering in a state where the first region and the magnetron unit face each other among the plurality of regions of the target, a layer containing the first type metal or alloy is formed, and the plurality of regions of the target By performing sputtering in a state where the second region and the magnetron unit face each other, a layer containing the second type metal or alloy can be formed.

Between the step of forming the first layer and the step of forming the second layer, the third layer moves while the magnetron unit moves from a position facing the first region to a position facing the second region. You may have the intermediate process of forming. In the intermediate step, the third layer may be formed as a gradient film that gradually changes from the composition of the first layer to the composition of the second layer. Thereby, a 3rd layer can be formed as a gradient film which changed gradually from the composition of the 1st layer to the composition of the 2nd layer between the 1st layer and 2nd layer from which composition differs. Therefore, by interposing the third layer between the first layer and the second layer, the adhesion between the layers in the multilayer film is increased.

The first layer may be a thin film mainly made of chromium, the second layer may be a thin film mainly made of aluminum, and the third layer may be a gradient film mainly made of chromium and aluminum. Thereby, the corrosion resistance of the sample to be deposited and the reflectance on the surface can be compatible at a high level.

A film forming apparatus according to an aspect of the present invention includes a vacuum chamber, a holding member that is provided in the vacuum chamber and holds a work to be formed, and a raw material that adheres to the surface of the work held by the holding member as a thin film. And a placement unit to be placed. The holding member includes a storage portion that follows the shape of the workpiece to be held, and a filling portion that fills a space between the storage portion and the vacuum chamber.

According to this aspect, by providing the holding member holding the workpiece in the vacuum chamber, the gap in the vacuum chamber is reduced, and the time required for exhausting to a predetermined degree of vacuum can be reduced.

The holding member may have a volume ratio of 40 to 95% in the internal space of the vacuum chamber. Thereby, the time required for exhausting to a predetermined degree of vacuum can be further reduced.

The filling unit may have a closed space inside. Thereby, a holding member can be reduced in weight.

The housing portion may be a resin material in which a metal thin film is formed in a portion in contact with (facing) the workpiece. Thereby, it can suppress that impurities, such as a water | moisture content, are spread | diffused in a vacuum chamber or a workpiece | work from an accommodating part.

Another aspect of the present invention is a method of using a film forming apparatus. This method is a method of using a film forming apparatus for forming a film on the surface of a work held by a holding member in a vacuum chamber, and the first work is placed on a first holding member selected from a plurality of holding members. The step of forming a film on the surface of the first workpiece while being held, and the second holding member selected from a plurality of holding members and having a shape different from that of the first holding member, And a step of forming a film on the surface of the second workpiece while holding a second workpiece having a different thickness.

According to this aspect, when the first workpiece is held by the first holding member in the vacuum chamber and when the second workpiece is held by the second holding member, a predetermined degree of vacuum is set. It becomes easy to arrange the time required for exhausting.

The first holding member preferably has a volume ratio of 40 to 95% in the internal space of the vacuum chamber in a state where the first work is held. The second holding member may have a volume ratio of 40 to 95% in the internal space of the vacuum chamber in a state where the second workpiece is held. Thereby, the time required for exhausting to a predetermined degree of vacuum can be further reduced.

With the first holding member holding the first workpiece, the volume ratio in the internal space of the vacuum chamber is A%. When the second holding member holds the second workpiece, the vacuum chamber If the ratio of the volume occupying the internal space is B%, the following formula (1) 0.5 ≦ A / B ≦ 1.5 (1) may be satisfied. Thereby, even if it is a workpiece | work of a different magnitude | size, the dispersion | variation in the time for exhausting to the predetermined | prescribed vacuum degree can be suppressed.

It should be noted that an arbitrary combination of the above-described components and a representation obtained by converting the expression of the present invention between a method, an apparatus, a system and the like are also effective as an aspect of the present invention.

According to the present invention, a multilayer film can be formed with a simple configuration. Or according to this invention, the operation rate of the film-forming apparatus can be improved.

It is a schematic diagram for demonstrating schematic structure of the sputtering device which concerns on 1st Embodiment. It is the side view which showed typically an example of the multilayer film formed with a sputtering device. It is the side view which showed typically the modification of the multilayer film formed with a sputtering device. FIG. 4A is a side view schematically showing an example of a multilayer film using a transparent material as a base material formed by a sputtering apparatus, and FIG. 4B is formed by a sputtering apparatus. It is the side view which showed typically the other example of the multilayer film which used the transparent material for the base material. It is the figure which showed typically the modification of the target which concerns on this Embodiment. FIG. 6A is a schematic diagram showing a schematic configuration of a magnetron unit of the sputtering apparatus according to the second embodiment, and FIG. 6B is a diagram of a target that can be used in the sputtering apparatus according to the second embodiment. It is a top view which shows an example. It is a schematic diagram for demonstrating schematic structure of the vapor deposition apparatus which concerns on 3rd Embodiment. It is an enlarged view of a jig. It is a schematic diagram for demonstrating the 2nd holding member and 2nd workpiece | work which concern on 3rd Embodiment. It is a figure which shows typically the modification of the jig | tool which concerns on 3rd Embodiment. FIG. 11A to FIG. 11D are schematic views for explaining the operation process of the vapor deposition apparatus according to the fourth embodiment.

Hereinafter, the present invention will be described based on embodiments with reference to the drawings. The same or equivalent components, members, and processes shown in the drawings are denoted by the same reference numerals, and repeated descriptions are omitted as appropriate. Further, the embodiments do not limit the invention but are exemplifications, and all features and combinations thereof described in the embodiments are not necessarily essential to the invention.

(First embodiment)
FIG. 1 is a schematic diagram for explaining a schematic configuration of the sputtering apparatus according to the first embodiment. In addition, about a magnetron sputtering apparatus shown in FIG. 1, description is abbreviate | omitted suitably about a well-known structure.

The sputtering apparatus 10 includes a film formation chamber 12 and a magnetron unit 14 provided below the chamber 12. The chamber 12 includes an exhaust path 18 that communicates with a turbo molecular pump and other exhaust devices via a valve 16, and a supply path 20 that is supplied with a discharge gas (a sputtering gas such as argon or xenon) during film formation. It is connected. The inside of the chamber 12 is evacuated to a predetermined degree of vacuum by an exhaust device, and then a sputtering gas is supplied into the chamber 12 from the supply path 20.

The chamber 12 includes a base material holder 22 as a placement portion on which a base material (work) 21 that is a sample to be deposited is placed, and a target holder 26 that holds a target 24. The target holder 26 is configured so that a high voltage is applied by a power source 28. The power source 28 applies a voltage between the base material 21 and the target 24 via the base material holder 22 and the target holder 26.

The magnetron unit 14 is provided on the back side of the target 24, and is configured such that a pair of permanent magnet units 30 used as a magnetic field generation source and the target 24 and the magnetron unit 14 move relative to each other while facing each other. Moving mechanism 32. The moving mechanism 32 according to the present embodiment is, for example, a spline mechanism that slides the permanent magnet unit 30 in the arrow direction.

When the sputtering apparatus 10 is activated, the atoms of the sputtering gas collide with the target 24 by an electric field, and the material of the target 24 is released toward the base material 21. As a result, the released metal or alloy particles are deposited on the surface of the substrate 21 to form a film. The base material 21 is, for example, a resin molded product, a die-cast metal, glass, a ceramic material, or the like.

The target 24 has a plurality of regions made of different types of metals or alloys. The target 24 according to the present embodiment has a first region 24a mainly composed of aluminum and a second region 24b mainly composed of chromium. The magnetron unit 14 is configured to be able to selectively face each of the plurality of regions of the target 24.

Next, a method for forming a multilayer film using the sputtering apparatus 10 according to the present embodiment will be described. FIG. 2 is a side view schematically showing an example of a multilayer film formed by the sputtering apparatus 10.

First, the sputtering apparatus 10 performs sputtering while the magnetron unit 14 is stationary at a position facing the second region 24b. As a result, a metal film 34 mainly made of chromium is formed on the substrate 21. Thereafter, the sputtering apparatus 10 performs sputtering while moving the magnetron unit 14 toward the position facing the first region 24 a by the moving mechanism 32. As a result, an alloy film 36 containing aluminum and chromium is formed on the metal film 34.

In the process in which the magnetron unit 14 moves from the position facing the second area 24b to the position facing the first area 24a, the area where the plasma is generated also moves. Therefore, the region to be sputtered was mostly the second region 24b made of chromium, but gradually the first region 24a made of aluminum was gradually included, and finally the first region 24b was made. The region 24a is almost all.

Therefore, the alloy film 36 has the highest chromium concentration on the surface 36a in contact with the metal film 34 (the lowest aluminum concentration) and the lowest chromium concentration on the surface 36b farthest from the surface 36a (the aluminum concentration is low). highest). That is, the alloy film 36 is an inclined film in which the composition of chromium and aluminum is inclined (the composition gradually changes) in the thickness direction.

Thereafter, the sputtering apparatus 10 performs sputtering in a state where the magnetron unit 14 is stopped at a position facing the first region 24a. As a result, a metal film 38 mainly made of aluminum is formed on the alloy film 36. As a result, as shown in FIG. 2, a multilayer film 40 in which a metal film 34, an alloy film 36, and a metal film 38 are laminated in this order is formed on the substrate 21.

In addition, the 1st area | region and 2nd area | region of the target 24 do not necessarily need to be a single metal material, for example, may be an iron-type alloy containing chromium and nickel like stainless steel.

Thus, (i) sputtering is performed in a state where the first region 24 a of the target 24 and the magnetron unit 14 face each other, thereby forming the metal film 38 containing aluminum, and (ii) the second region of the target 24. Sputtering is performed in a state where 24b and the magnetron unit 14 face each other, whereby the metal film 34 containing chromium can be formed. Therefore, the sputtering apparatus 10 can also form a multilayer film in which the metal film 38 is directly formed on the metal film 34.

(Iii) By performing sputtering while the magnetron unit 14 faces both the first region 24a and the second region 24b of the target 24, the alloy film 36 containing aluminum and chromium can be formed. Thereby, since the alloy film 36 which is an inclined film can be formed between the metal film 34 and the metal film 38, compared with the case where the metal film 34 and the metal film 38 made of different metals are directly adhered, respectively. The adhesion between the films (metal film 34, alloy film 36, metal film 38) is improved.

As described above, the sputtering apparatus 10 according to the present embodiment can form a multilayer film having a layer containing aluminum and a second layer containing chromium. That is, the sputtering apparatus 10 includes a second layer containing chromium having high corrosion resistance formed on the substrate, a first layer containing aluminum having high reflectivity formed on the second layer, Can be formed. Thereby, the corrosion resistance of the substrate to be deposited and the reflectance on the surface can be compatible at a high level.

Conventionally, a reflective film of a reflector, which is one of the parts of an automotive lamp, includes an aluminum film formed by vapor deposition on a resin molded product, and an organic material formed by a polymerization apparatus as a protective film for the aluminum film ( For example, a multilayer film of a protective film of a silicon oxide component using hexamethyldisiloxane) has been used. However, in the production of a conventional protective film, an apparatus for depositing aluminum and an apparatus for forming a film of an organic material by polymerization are required, which increases the cost of the apparatus and forms each layer with separate apparatuses. Therefore, it took a long manufacturing time.

On the other hand, in the sputtering apparatus 10 according to the present embodiment, the corrosion resistance is good (property that satisfies the hot water test and alkali resistance test) and the reflectance is high (85% or more with respect to visible light). Since a multilayer film can be formed, the apparatus cost can be reduced and the manufacturing time can be shortened. As a result, an automotive lamp part having a reflective film with high reflectance and high corrosion resistance can be manufactured.

(Modification of multilayer film)
FIG. 3 is a side view schematically showing a modification of the multilayer film formed by the sputtering apparatus 10. The multilayer film 42 shown in FIG. 3 can be formed by the sputtering apparatus 10 provided with the target 24. The multilayer film 42 is obtained by reciprocating the magnetron unit 14. Specifically, the metal film 34, the alloy film 36, and the metal film 38 are formed on the base material 21 in the same manner as the method for manufacturing the multilayer film 40 shown in FIG. At that time, the magnetron unit 14 is in a position facing the first region 24a shown in FIG. Thereafter, the alloy film 36 is formed when the magnetron unit 14 is moved to the second region 24b, and the metal film 34 is formed with the magnetron unit 14 facing the second region 24b. Thus, the multilayer film 42 is formed by reciprocating the magnetron unit 14.

FIG. 4A is a side view schematically showing an example of a multilayer film using a transparent material as a base material formed by the sputtering apparatus 10, and FIG. 4B is formed by the sputtering apparatus 10. It is the side view which showed typically the other example of the multilayer film which used the transparent material for the base material.

4A is a transparent resin (polycarbonate resin or acrylic resin) or glass, and is located on the front side of the part. The sputtering apparatus 10 performs sputtering in a state where the magnetron unit 14 shown in FIG. 1 faces the first region 24a, thereby forming a metal film 48 containing aluminum on the back surface side of the base 46, and then the magnetron unit. 14 is moved, and sputtering is performed in a state where the magnetron unit 14 faces the second region 24b, whereby the metal film 50 containing chromium is formed on the back surface of the metal film 48.

Thereby, the multilayer film 44 in which the metal film 48 and the metal film 50 are laminated on the back surface side of the transparent substrate 46 is formed. Further, as shown in FIG. 4B, the sputtering apparatus 10 can form a multilayer film 54 in which an alloy film 52 that is an inclined film is laminated between the metal film 48 and the metal film 50.

The multilayer film 44 and the multilayer film 54 formed on the transparent base material 46 by the sputtering apparatus 10 both have a reflectance with respect to visible light of 85% or more, and satisfy the warm water test and the alkali resistance test. The substrate 46 may be made of an opaque resin such as PBT, PET / PBT alloy material, or BMC instead of a transparent resin.

(Target modification)
Next, modifications of the target that can be used in the sputtering apparatus 10 will be described. In the above-described target, two regions are each composed of one kind of metal element, but one or both of the two regions may be composed of an alloy composed of a plurality of metal elements. For example, one region may be an alloy such as SUS, and the other region may be composed of a single kind of metal such as aluminum.

Also, the target may have three or more areas. FIG. 5 is a diagram schematically showing a modification of the target according to the present embodiment. A target 56 shown in FIG. 5 includes a first region 56a mainly composed of aluminum, a second region 56b mainly composed of chromium, and a third region 56c mainly composed of titanium. ing. Accordingly, it is possible to form a multilayer film including three or more kinds of metal films and a ternary alloy film. Further, by forming a partial region of the target 56 with an alloy, it is also possible to form a multi-component alloy film of ternary or higher.

(Second Embodiment)
FIG. 6A is a schematic diagram showing a schematic configuration of a magnetron unit of the sputtering apparatus according to the second embodiment, and FIG. 6B is a diagram of a target that can be used in the sputtering apparatus according to the second embodiment. It is a top view which shows an example. In the sputtering apparatus according to the second embodiment, the chamber 12 and its internal structure are the same as those in the first embodiment and are not shown.

The magnetron unit 14 according to the first embodiment is configured to reciprocate linearly while facing the target. On the other hand, the sputtering apparatus according to the second embodiment includes a magnetron unit 58 and a moving mechanism that rotates the magnetron unit 58 around the rotation axis.

The target 60 has a disc shape and includes a plurality of arc-shaped regions 60a to 60e. Each of the regions 60a to 60e is made of different metals or alloys. Thereby, the sputtering apparatus according to the second embodiment can form a plurality of metal films made of different kinds of metals, an alloy film in which a plurality of metals are mixed, and can form the alloy film as an inclined film.

(Third embodiment)
There are various types of film forming apparatuses. In the following embodiments, a vapor deposition apparatus will be described as an example. FIG. 7 is a schematic diagram for explaining a schematic configuration of a vapor deposition apparatus according to the third embodiment. In addition, about the vapor deposition apparatus shown in FIG. 7, description is abbreviate | omitted suitably about a well-known structure.

The vapor deposition apparatus 110 includes a film formation chamber 112 and a vapor deposition unit 114 provided in the lower portion of the chamber 112. The chamber 112 is connected to an exhaust path 118 communicating with a turbo molecular pump or other exhaust device via a valve 116. The inside of the chamber 112 is exhausted to a predetermined degree of vacuum by an exhaust device.

The vapor deposition apparatus 110 further includes a jig 122 provided in the chamber 112 as a holding member that holds a workpiece 120 (base material) that is a sample to be formed. The vapor deposition unit 114 has an evaporation source 124 as a mounting portion on which a raw material to be attached as a thin film is mounted on the surface of the work 120 held by the jig 122. The vapor deposition unit 114 heats a raw material such as metal placed on the evaporation source 124 by a method such as resistance heating, electron beam, high frequency induction, or laser. Examples of the raw material include metals and alloys such as aluminum, copper, chromium, zinc, gold, silver, platinum, and nickel, and oxides and fluorides such as SiO ₂ , TiO ₂ , ZrO ₂ , and MgF ₂ .

Next, the operation of the vapor deposition apparatus 110 will be described. First, the chamber 112 is opened to atmospheric pressure, and the jig 122 holding the workpiece 120 is placed at a predetermined position in the chamber 112. Alternatively, the workpiece 120 is set on a jig 122 installed in the chamber 112 in advance. Thereafter, the atmosphere in the chamber 112 is shut off from the outside, the valve 116 is opened, and the inside of the chamber 112 is exhausted to a predetermined degree of vacuum by an exhaust device (not shown).

The jig 122 according to the present embodiment includes a concave accommodating portion 126 that follows the shape of the workpiece 120 to be held, and a filling portion 128 that fills a space between the accommodating portion 126 and the inner wall of the chamber 112. In a normal vapor deposition apparatus, the holding portion that holds the workpiece inside the chamber has a very small volume ratio in the internal space of the chamber, and is less than 10% at most. Therefore, the time required for evacuating the chamber to a predetermined degree of vacuum becomes longer.

Therefore, in the vapor deposition apparatus 110 according to the present embodiment, by providing the jig 122 holding the workpiece 120 in the chamber 112, the gap in the chamber 112 is reduced, and is necessary for exhausting to a predetermined degree of vacuum. Time can be reduced. Thereafter, the vapor deposition apparatus 110 operates the vapor deposition unit 114 to evaporate the raw material from the evaporation source 124, thereby forming a predetermined thin film on the surface of the work 120.

Note that the jig 122 has a shape and a size such that a volume ratio in the internal space of the chamber 112 is 10% or more, preferably 40% or more, more preferably 70% or more. In addition, the jig 122 preferably has a shape and size such that the volume ratio in the internal space of the chamber 112 is 95% or less. Thereby, the time required for exhausting to a predetermined degree of vacuum can be further reduced.

FIG. 8 is an enlarged view of the jig 122. The material of the jig 122 is made of, for example, SUS or aluminum. In addition, the jig 122 includes at least a part of the

surfaces

126a and 127a out of the housing part 126 that contacts the workpiece 120 and the part 127 exposed in the chamber, and is made of a resin material such as PTFE or acrylic that has low water absorption. May be. Thereby, the fall of the vacuum degree by the degassing from resin and the fall of film-forming quality can be suppressed. Further, a metal film 126b such as stainless steel (SUS) or aluminum may be formed on the resin surface 126a in contact with the workpiece 120. Thereby, it is possible to prevent impurities such as moisture from diffusing from the resin surface 126 a of the housing portion 126 into the chamber or the workpiece 120. As a result, the time required for evacuating to a predetermined degree of vacuum can be greatly shortened, and deterioration in film quality can be suppressed.

Moreover, the jig 122 according to the present embodiment has a closed space 128 a inside the filling portion 128. The space 128 a is sealed with respect to the internal space of the chamber 112. Thereby, the jig | tool 122 can be reduced in weight.

Next, other jigs used in the vapor deposition apparatus 110 will be described. The jig 122 described above has a size and shape corresponding to the workpiece 120. However, the shape and size of the workpiece are not always the same. In that case, in order to form a film on a plurality of types of workpieces, if a jig determined for each vapor deposition apparatus is used, a plurality of vapor deposition apparatuses having different specifications are required.

Or, if one jig is used to handle workpieces with different shapes, the volume of the space in the chamber to be evacuated changes depending on the size of the workpiece. In that case, the time required for evacuating to a predetermined degree of vacuum and the evacuation conditions vary depending on the size of the workpiece, so the setting of the apparatus becomes complicated and the process management becomes complicated especially in the mixed flow production site. .

Then, the usage method of the vapor deposition apparatus 110 which concerns on this Embodiment is the surface of the workpiece | work 120 in the state which hold | maintained the workpiece | work 120 to the above-mentioned jig | tool 122 as a 1st holding member selected from the several jig | tool. Forming a film on the surface of the second workpiece in a state where the second workpiece having a shape different from that of the workpiece 120 is held by a jig as a second holding member having a shape different from that of the jig 122. And a process can be selected.

FIG. 9 is a schematic diagram for explaining the second holding member and the second workpiece according to the third embodiment. The jig 130 as the second holding member shown in FIG. 9 includes a concave accommodating portion 134 that follows the shape of the workpiece 132 to be held, a filling portion 136 that fills a space between the accommodating portion 134 and the inner wall of the chamber 112, Have A closed space 136 a is formed inside the filling portion 136.

Also, the jig 130 has such a size that the volume when the work 132 is held is not so different from the volume when the jig 122 holds the work 120. Thereby, even if it is a workpiece | work of a different magnitude | size, the dispersion | variation in the time for exhausting to the predetermined | prescribed vacuum degree can be suppressed.

More specifically, in the state where the jig 122 holds the workpiece 120, the volume ratio in the internal space of the chamber 112 is A%, and in the state where the jig 130 holds the workpiece 132, the internal space of the chamber 112. Assuming that the volume ratio in B is B%, 0.5 ≦ A / B ≦ 1.5... Formula (1) may be satisfied. More preferably, 0.8 ≦ A / B ≦ 1.2 is satisfied. Thereby, even if it is a workpiece | work of a different magnitude | size, the dispersion | variation in the time for exhausting to the predetermined | prescribed vacuum degree can be suppressed.

As described above, the vapor deposition apparatus 110 according to the present embodiment has a predetermined vacuum between the case where the work 120 is held by the jig 122 and the case where the work 132 is held by the jig 130 in the chamber. It becomes easy to arrange the time required to exhaust to the degree. As a result, device setting work and process management during mixed flow production are facilitated.

Note that the jig 130 has a shape and a size such that the volume ratio in the internal space of the chamber 112 is 10% or more, preferably 40% or more, more preferably 70% or more. In addition, the jig 130 preferably has a shape and a size such that the volume ratio in the internal space of the chamber 112 is 95% or less. Thereby, the time required for exhausting to a predetermined degree of vacuum can be further reduced. The shape of the jig is a shape that does not obstruct the path of the raw material from the evaporation source to the workpiece.

(Modification)
FIG. 10 is a diagram schematically illustrating a modification of the jig according to the third embodiment. A jig 138 shown in FIG. 10 is a container in which a plurality of parts are combined. The jig 138 includes a cylindrical portion 140 made of aluminum, a resin holding portion 142 that closes one opening portion of the cylindrical portion 140, a resin bottom portion 144 that closes the other opening portion of the cylindrical portion 140, and Have The holding part 142 and the bottom part 144 are made of a resin molded product such as PTFE or acrylic having low water absorption, or a metal member. The holding part 142 has a concave accommodating part 143 along the shape of the work to be held.

Further, a metal film 145 may be formed on the surface of the accommodating part 143 that contacts (opposes) the workpiece in order to prevent the resin of the holding part 142 from absorbing water. For example, the metal film 145 is preferably a stainless thin film having a small adsorption coefficient. Thereby, it becomes difficult for the resin of the holding part 142 to absorb water, and degassing from the resin can be reduced.

The cylindrical portion 140 and the holding portion 142 are coupled to each other by a fastening member such as a bolt with the O-ring 146 interposed therebetween. Moreover, the cylinder part 140 and the bottom part 144 are couple | bonded by fastening members, such as a volt | bolt, in the state which pinched | interposed the O-ring 148. FIG. The internal space 150 surrounded by the cylindrical portion 140, the holding portion 142, and the bottom portion 144 is hermetically sealed, and the entire jig 138 is a pressure vessel having a vacuum degree higher than 1 × 10 ⁻⁵ Pa. Thereby, it is possible to reduce the weight while increasing the volume including the internal space 150 of the jig 138.

(Fourth embodiment)
In the vacuum film formation process, it is necessary to evacuate the chamber to a predetermined degree of vacuum. In addition, when evacuating quickly to a predetermined degree of vacuum, it is necessary to use a high-capacity, high-performance pump, or evacuate in multiple stages using multiple pumps, which increases the cost of the film formation system. It is a cause to do.

Therefore, the present inventor has conceived that the number of pumps of general performance can be reduced by using the jig according to the third embodiment. Below, the vapor deposition apparatus provided with the workpiece | work exchange chamber is demonstrated as an example.

FIG. 11A to FIG. 11D are schematic views for explaining the operation process of the vapor deposition apparatus according to the fourth embodiment.

A vapor deposition apparatus 152 shown in FIG. 11A includes a vacuum chamber 158 having a film formation chamber 154 and a chamber 156 for exchanging a work (part to be formed), and a vapor deposition unit 160 provided in the chamber 154. A pump 162 serving as an exhaust device for exhausting the inside of the chamber 154 to a predetermined degree of vacuum, an introduction path 164 for introducing dry air into the chamber 156, and a rotation mechanism 166. The rotating mechanism 166 exchanges the work and jig disposed in the chamber 154 and the work and jig disposed in the chamber 156 by rotating them inside the vacuum chamber 158.

In the state shown in FIG. 11A, a metal reflective film is formed on the workpiece 170 held by the jig 168 by the vapor deposition unit 160 inside the chamber 154. On the other hand, in the chamber 156, the work 174 is held in the housing portion of the jig 172 in a state where the chamber 156 is open to the atmosphere.

Next, as shown in FIG. 11B, the chamber 156 is sealed, and dry air is introduced from the introduction path 164. Accordingly, the inside of the chamber 156 is replaced with the dry gas, and moisture can be suppressed from being adsorbed and accumulated in each part in the chamber 156.

Next, as shown in FIG. 11 (c), the jig 172 and the workpiece 174 are moved to the chamber 154 by the rotation mechanism 166, and the jig 168 and the workpiece 170 are moved to the chamber 156. Thereafter, the inside of the chamber 156 is exhausted by the pump 162 until a predetermined degree of vacuum is reached. Since the volume of the space to be exhausted is reduced by the jig 172 in the chamber 156, even a single pump with a small capacity is quickly exhausted to a predetermined degree of vacuum.

Next, as shown in FIG. 11D, a metal reflective film is formed on the work 174 held by the jig 172 by the vapor deposition unit 160 inside the chamber 154. On the other hand, in the chamber 156, the film-formed workpiece 170 held by the jig 172 is taken out.

As described above, the vapor deposition apparatus 152 according to the fourth embodiment needs only to have the pump 162 in the chamber 154, and it is not necessary to provide a roughing pump in the chamber 156 for taking in and out the workpiece. If it is desired to increase the processing speed, a pump 162 may be installed on the chamber 156 side.

As described above, the present invention has been described with reference to the above-described embodiment. However, the present invention is not limited to the above-described embodiment, and the present invention can be appropriately combined or replaced with the configuration of the embodiment. It is included in the present invention. In addition, it is possible to appropriately change the combination and processing order in the embodiment based on the knowledge of those skilled in the art and to add various modifications such as various design changes to the embodiment. The described embodiments can also be included in the scope of the present invention.

In the above-described embodiment, the vapor deposition apparatus has been described as an example of the film formation apparatus. However, the sputtering apparatus and other film formation apparatuses using vacuum, particularly for processes that require frequent evacuation for mass production. It is suitable for a film forming apparatus.

The present invention relates to a technique for manufacturing a multilayer film and a film forming apparatus.

10 sputtering equipment, 12 chambers, 14 magnetron units, 21 base material, 24 targets, 24a first area, 24b second area, 28 power supply, 30 permanent magnet unit, 32 moving mechanism, 34 metal film, 36 alloy film, 38 metal films, 40 multilayer films.

Claims

A placement unit on which a sample to be deposited is placed;
A target having a plurality of regions of different types of metals or alloys;
A magnetron unit provided on the back side of the target;
A power source for applying a voltage between the sample and the target;
A moving mechanism configured to move relative to the target and the magnetron unit while facing each other,
The said magnetron unit is comprised so that it can selectively oppose each area | region of the several area | region of the said target, The sputtering device characterized by the above-mentioned.
The sputtering apparatus according to claim 1, wherein the target has a first region made of aluminum and a second region made of chromium.
A first layer formed by sputtering a first region of the plurality of regions by moving the magnetron unit relative to a target having a plurality of regions made of different types of metals or alloys; A method for producing a multilayer film, in which a second layer formed by sputtering a second region of the plurality of regions is laminated.
Between the step of forming the first layer and the step of forming the second layer, the magnetron unit moves from a position facing the first region to a position facing the second region. While having an intermediate step of forming the third layer,
4. The multilayer film according to claim 3, wherein the intermediate step forms the third layer as a gradient film that gradually changes from the composition of the first layer to the composition of the second layer. 5. Production method.
The first layer is a thin film mainly made of chromium, the second layer is a thin film mainly made of aluminum, and the third layer is an inclined film mainly made of chromium and aluminum. The manufacturing method of the multilayer film of Claim 4.
A vacuum chamber;
A holding member provided in the vacuum chamber for holding a workpiece to be deposited;
A mounting portion on which a raw material to be attached as a thin film is mounted on the surface of the workpiece held by the holding member;
The film forming apparatus, wherein the holding member includes an accommodating portion along a shape of a workpiece to be held, and a filling portion that fills a space between the accommodating portion and the vacuum chamber.
The film forming apparatus according to claim 6, wherein the holding member has a volume ratio of 40 to 95% in the internal space of the vacuum chamber.
The film forming apparatus according to claim 6 or 7, wherein the filling unit has a closed space inside.
The film forming apparatus according to any one of claims 6 to 8, wherein the accommodating portion is a resin material in which a metal thin film is formed in a portion in contact with the workpiece.
A method of using a film forming apparatus for forming a film on the surface of a work held by a holding member in a vacuum chamber,
Forming a film on the surface of the first workpiece in a state where the first workpiece is held by a first holding member selected from a plurality of holding members;
A second workpiece selected from a plurality of holding members is held in a state where a second workpiece having a shape different from that of the first workpiece is held by a second holding member having a shape different from that of the first holding member. Forming a film on the surface of
A method of using a film forming apparatus, wherein
In the state where the first holding member holds the first workpiece, the volume ratio in the internal space of the vacuum chamber is 40 to 95%,
The second holding member has a volume ratio of 40 to 95% in the internal space of the vacuum chamber while holding the second workpiece.
The method of using the film forming apparatus according to claim 10.
In a state where the first holding member holds the first workpiece, the volume ratio occupying the internal space of the vacuum chamber is A%, and the second holding member holds the second workpiece. In this state, if the volume ratio in the internal space of the vacuum chamber is B%, the following formula (1)
0.5 ≦ A / B ≦ 1.5 Formula (1)
The method of using the film forming apparatus according to claim 10 or 11, wherein: