JPS62230971A - Device for sputtering magnetron - Google Patents
Device for sputtering magnetronInfo
- Publication number
- JPS62230971A JPS62230971A JP7485086A JP7485086A JPS62230971A JP S62230971 A JPS62230971 A JP S62230971A JP 7485086 A JP7485086 A JP 7485086A JP 7485086 A JP7485086 A JP 7485086A JP S62230971 A JPS62230971 A JP S62230971A
- Authority
- JP
- Japan
- Prior art keywords
- target plate
- magnet
- rotary shaft
- target
- divided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title description 2
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 abstract description 13
- 239000000956 alloy Substances 0.000 abstract description 9
- 229910045601 alloy Inorganic materials 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 ３、発明のａｔ ｍな説明 （イ）産業上の利用分野 本発明は、マグネトロンスパッタ装置に関する。[Detailed description of the invention] 3. Atm explanation of the invention (b) Industrial application fields The present invention relates to a magnetron sputtering apparatus.
（ロ）従来の技術
最近、スパッタ装置で合金の薄膜を作る要求が多くなっ
た。たとえば、金属元素ＡとＢの薄膜を作る場合、従来
は（ＯＡとＢから成る合金のターゲット板を用いる、■
材料へのターゲット板の表面に材料Ｂの小片をモザイク
状に配置する、■Ａ材料とＢ材料の分割ターゲット板を
用いる、等の方法が採られていた。(b) Prior Art Recently, there has been an increasing demand for producing thin films of alloys using sputtering equipment. For example, when making a thin film of metal elements A and B, conventionally (a target plate of an alloy consisting of OA and B is used,
Methods such as arranging small pieces of material B in a mosaic pattern on the surface of a target plate, and using divided target plates of material A and material B have been adopted.
（ハ）発明が解決しようとする問題点
しかしながら、いずれにしても作成されるべき合金膜の
組成比を任意に設定したり、連続的に変化させたりする
ことは不可能であった。(c) Problems to be Solved by the Invention However, in any case, it has been impossible to arbitrarily set or continuously change the composition ratio of the alloy film to be produced.
従って、本発明の目的は、作成すべきさ金膜の、ＩＩＬ
威比を任意に設定できるような装置を提供することを目
的とする。Therefore, it is an object of the present invention to prepare the IIL of the gold film to be prepared.
The purpose of the present invention is to provide a device that allows the power ratio to be set arbitrarily.
（ニ）問題、Ｉ！工を解決するための手段前記目的を達
成するため、本発明の構成は次のごと（である６ｉＩＩ
Ｉち、複数種類の材料に対応して複数に分割されたター
ゲット板を設けるとともに、該ターゲット板の裏側に内
蔵されている永久磁石を、前記ターゲット板の面に平行
な面内で移動むせる駆動機構を設けたことである。(d) Problem, I! Means for Solving the Problems In order to achieve the above object, the structure of the present invention is as follows (6iIII
First, a target plate divided into a plurality of parts corresponding to a plurality of types of materials is provided, and a drive that moves a permanent magnet built in the back side of the target plate in a plane parallel to the surface of the target plate. This is because a mechanism has been established.
（ホ）作用
永久磁石が駆動機構によって、ターゲット板の面に平行
な面内で移動せられ、これによって１金の組成比を任意
に変化させることができる。(e) The working permanent magnet is moved by the drive mechanism in a plane parallel to the plane of the target plate, thereby making it possible to arbitrarily change the composition ratio of 1 gold.
（へ）実施例 次に本発明の一実施例を図面に基づき説明する。(f) Example Next, one embodiment of the present invention will be described based on the drawings.
真空チャンバ８内で、基板ホルダ１が鉛直面に展延して
立設され、その表面には被膜を付されるべき基板２が取
付けられている６基板２に対し間隔を存して対向するタ
ーデットハワノング４の一側面には、ターゲット板３が
基板２に対し間隔を存して対向して取付けられている。In the vacuum chamber 8, a substrate holder 1 is installed extending vertically, and faces the 6 substrates 2 with a gap therebetween, on the surface of which a substrate 2 to be coated is attached. A target plate 3 is attached to one side of the tardet hawanong 4 so as to face the substrate 2 with a gap therebetween.
また、ターデットハウノング４の内部で前記ターゲット
板３の裏面側には永久ｌｉ３石５が設けられている。こ
の磁石５は第２図のごとく、円柱磁石５ａの回りに間隔
を存して同心に円環磁石５ａが配置されたものである。Further, a permanent Li3 stone 5 is provided inside the tardet haunong 4 on the back side of the target plate 3. As shown in FIG. 2, this magnet 5 has ring magnets 5a arranged concentrically around a cylindrical magnet 5a at intervals.
また、磁石５の裏面には、磁石の中心軸線から偏心した
位置に、回転軸６が取付けられ、この紬の１１はハクノ
ング４の壁を貫通してハッノング４の外側へ突出してい
る。そして、この突出端にはｆ云勤歯ｆ１１９を介して
モータ７が接続さ゛れている。Further, a rotation shaft 6 is attached to the back surface of the magnet 5 at a position eccentric from the central axis of the magnet, and this pongee 11 penetrates the wall of the hakunong 4 and projects to the outside of the hakunong 4. The motor 7 is connected to this protruding end via a gear tooth f119.
ここで、前記ターゲット＠３は第３ａないし第３ｃ図の
如く、２ ？ｆ分に分割されて一方を材料Ａ、他方を材
料Ｂとしたものである。Here, the target @3 is 2? as shown in FIGS. 3a to 3c. It is divided into f parts, one being material A and the other being material B.
従って、モータ７を回転させれば、伝動歯車９をｆして
回転軸６が回転し、磁石５は偏心回転する。ここで、磁
石５によって生ずるターゲット板３表面の蒸発源３ａは
、第３ａないし第３ｃ図に示すように、ドーナツ状とな
る。それ故に磁石５の位置によって組成比が変化するこ
とになる。第３ａ−第３ｃ図は各々、元素Ａをより多く
含んだ膜、元素Ａ、Ｂを等しく含んだ膜および元素Ａを
より少なく含んだ膜を生成する場合を示す。Therefore, when the motor 7 is rotated, the transmission gear 9 is rotated, the rotating shaft 6 is rotated, and the magnet 5 is eccentrically rotated. Here, the evaporation source 3a on the surface of the target plate 3 generated by the magnet 5 has a donut shape as shown in FIGS. 3a to 3c. Therefore, the composition ratio changes depending on the position of the magnet 5. Figures 3a-3c show the production of a film containing more element A, a film containing elements A and B equally, and a film containing less element A, respectively.
従って、磁石５をモータ７で連続的に回転させれば、合
金組成比が厚さ方向に連続的に変化する膜を生成させる
ことができる。また、後述の如く、モータフの代りに手
動ハンドルで磁石５を回転させたのち、停止させれば、
その位置に対応した組成比の合金膜が得られる。Therefore, if the magnet 5 is continuously rotated by the motor 7, a film in which the alloy composition ratio changes continuously in the thickness direction can be produced. Also, as described later, if the magnet 5 is rotated and then stopped using a manual handle instead of a motor,
An alloy film having a composition ratio corresponding to that position is obtained.
なお、前記モータ７の代りに手動ハンドルを設けてもよ
い。また、ターゲット板３が円形でない場合には、回転
軸９と磁石５とをカムまたはゼネバ等の運動変換機構を
介して連結することにより、磁石５を揺動または平イ〒
往復運動をさせてもよい。Note that a manual handle may be provided in place of the motor 7. If the target plate 3 is not circular, the magnet 5 can be oscillated or flattened by connecting the rotating shaft 9 and the magnet 5 via a motion conversion mechanism such as a cam or Geneva.
A reciprocating motion may be performed.
（ト）発明の効果
本発明は以上の如く、ターゲット板は合金材料の種類に
よって複数に分割され、磁石は移動されるので、任意の
組成比を打った合金が容易に得られることとなった。(G) Effects of the Invention As described above, in the present invention, the target plate is divided into a plurality of parts depending on the type of alloy material, and the magnets are moved, so that an alloy with an arbitrary composition ratio can be easily obtained. .
１、図面の＠ ！ｉｔな説明
第１図は本発明の一実施例を示す水平断面図、第２図は
永久磁石の斜視図、第３ａないし第３ｃ図は作動説明図
である。1. @ of the drawing! 1 is a horizontal sectional view showing an embodiment of the present invention, FIG. 2 is a perspective view of a permanent magnet, and FIGS. 3a to 3c are illustrations of operation.
２・・・基板、３・・・ターゲット板、５・・・永久磁
石、６・・・回転軸、７・・・モータ、８・・・真空チ
ャンバ代理人 すｔ埋土 四教 圭一部
弁理上 大側 新平2...Substrate, 3...Target plate, 5...Permanent magnet, 6...Rotating shaft, 7...Motor, 8...Vacuum chamber agent Suikyo Shikyo Keiichi Patent Attorney Upper large side Shinpei
Claims (1)
板を設けるとともに、該ターゲット板の裏側に内蔵され
ている永久磁石を、前記ターゲット板の面に平行な面内
で移動させる駆動機構を設けたことを特徴とするマグネ
トロンスパッタ装置。A target plate divided into a plurality of parts corresponding to a plurality of types of materials is provided, and a drive mechanism is provided that moves a permanent magnet built in the back side of the target plate in a plane parallel to the surface of the target plate. A magnetron sputtering device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7485086A JPS62230971A (en) | 1986-03-31 | 1986-03-31 | Device for sputtering magnetron |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7485086A JPS62230971A (en) | 1986-03-31 | 1986-03-31 | Device for sputtering magnetron |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62230971A true JPS62230971A (en) | 1987-10-09 |
Family
ID=13559203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7485086A Pending JPS62230971A (en) | 1986-03-31 | 1986-03-31 | Device for sputtering magnetron |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62230971A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6290825B1 (en) * | 1999-02-12 | 2001-09-18 | Applied Materials, Inc. | High-density plasma source for ionized metal deposition |
| SG90183A1 (en) * | 1999-10-22 | 2002-07-23 | Applied Materials Inc | Sputter magnetron having two rotation diameters |
| US6497802B2 (en) | 1999-02-12 | 2002-12-24 | Applied Materials, Inc. | Self ionized plasma sputtering |
| US6790323B2 (en) | 1999-02-12 | 2004-09-14 | Applied Materials, Inc. | Self ionized sputtering using a high density plasma source |
| JP2013540899A (en) * | 2010-09-28 | 2013-11-07 | ジングルス・テヒノロギース・アクチェンゲゼルシャフト | Substrate coated with alloy using cathode sputtering |
| WO2019216331A1 (en) * | 2018-05-09 | 2019-11-14 | 株式会社小糸製作所 | Sputtering device, method for manufacturing multilayered film, film forming device, and method for using film forming device |
-
1986
- 1986-03-31 JP JP7485086A patent/JPS62230971A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6290825B1 (en) * | 1999-02-12 | 2001-09-18 | Applied Materials, Inc. | High-density plasma source for ionized metal deposition |
| US6497802B2 (en) | 1999-02-12 | 2002-12-24 | Applied Materials, Inc. | Self ionized plasma sputtering |
| US6790323B2 (en) | 1999-02-12 | 2004-09-14 | Applied Materials, Inc. | Self ionized sputtering using a high density plasma source |
| SG90183A1 (en) * | 1999-10-22 | 2002-07-23 | Applied Materials Inc | Sputter magnetron having two rotation diameters |
| JP2013540899A (en) * | 2010-09-28 | 2013-11-07 | ジングルス・テヒノロギース・アクチェンゲゼルシャフト | Substrate coated with alloy using cathode sputtering |
| US9347131B2 (en) | 2010-09-28 | 2016-05-24 | Singulus Technologies Ag. | Coating substrates with an alloy by means of cathode sputtering |
| WO2019216331A1 (en) * | 2018-05-09 | 2019-11-14 | 株式会社小糸製作所 | Sputtering device, method for manufacturing multilayered film, film forming device, and method for using film forming device |
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