JPH0826455B2 - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPH0826455B2
JPH0826455B2 JP2159762A JP15976290A JPH0826455B2 JP H0826455 B2 JPH0826455 B2 JP H0826455B2 JP 2159762 A JP2159762 A JP 2159762A JP 15976290 A JP15976290 A JP 15976290A JP H0826455 B2 JPH0826455 B2 JP H0826455B2
Authority
JP
Japan
Prior art keywords
substrate
substrate holder
permanent magnets
periphery
revolving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2159762A
Other languages
Japanese (ja)
Other versions
JPH0452275A (en
Inventor
英嗣 瀬戸山
光浩 亀井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2159762A priority Critical patent/JPH0826455B2/en
Publication of JPH0452275A publication Critical patent/JPH0452275A/en
Publication of JPH0826455B2 publication Critical patent/JPH0826455B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はスパツタリング装置に係り、特に、基板ホル
ダ上に載置されている基板を自公転させながら表面に薄
膜を形成するスパツタリング装置の機構系に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering device, and more particularly to a mechanical system of a sputtering device for forming a thin film on the surface of a substrate mounted on a substrate holder while revolving around the substrate. Regarding

〔従来の技術〕[Conventional technology]

スパツタリング装置は、基板に薄膜を形成する手段と
して幅広く用いられている。スパツタの方式には数多く
の種類があるが、成膜の均一性を確保する為に、ターゲ
ツトに対向する基板を自公転させながら成膜する方法が
とられている。
The sputtering device is widely used as a means for forming a thin film on a substrate. There are many types of sputtering methods, but in order to ensure the uniformity of film formation, a method of forming a film while rotating the substrate facing the target is revolved.

また、膜中への不純物、又は欠陥を低減させる為に基
板を垂直状態に保持しながら、成膜させる方法もある。
There is also a method of forming a film while holding the substrate in a vertical state in order to reduce impurities or defects in the film.

一方、設備生産性を上げる為、スパツタ室の対向する
両壁面にターゲツト電極を載置し、この間を通過もしく
は、移動してきた基板ホルダの両側より成膜を行なう方
法が採用されている。
On the other hand, in order to improve the productivity of the equipment, a method is adopted in which target electrodes are placed on both wall surfaces of the sputtering chamber which face each other, and film formation is performed from both sides of the substrate holder that has passed through or moved between the target electrodes.

然し乍ら、上記の条件を同時に満たそうとした場合、
自公転機構の構造配置は、特開昭63−282260号公報のよ
うに、その駆動源は、スパツタ室の両側壁部対向位置に
設けたモータにより行なわれる。このとき、基板面側に
露出する駆動モータの動力伝達軸にはスパツタ粒子が付
着し、異物源となるはがれを発生させたり、自公転機構
部のギア部や軸受部から多量の異物を発生させたりする
ため、これらの異物,ゴミが高品質膜の形成を阻害する
主因となつていた。
However, if you try to satisfy the above conditions at the same time,
As for the structural arrangement of the auto-revolution mechanism, as in Japanese Patent Laid-Open No. 63-282260, the drive source thereof is a motor provided at a position opposite to both side wall portions of the sputter chamber. At this time, spatter particles adhere to the power transmission shaft of the drive motor that is exposed on the substrate surface side, causing peeling that is a source of foreign matter, and a large amount of foreign matter from the gear section and bearing section of the auto-revolution mechanism section. Therefore, these foreign substances and dust are the main causes of hindering the formation of high quality films.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

上記従来技術は、成膜源側に配置されたモータ若しく
は伝達軸を介して行なわれており、これらからの発塵の
影響については十分配慮がされておらず垂直自公転基板
へのゴミの付着の問題があつた。
The above-mentioned conventional technique is carried out via a motor or a transmission shaft arranged on the film formation source side, and the influence of dust generation from these is not sufficiently taken into consideration, and dust adheres to the vertical rotation substrate. There was a problem.

本発明は上述の点に鑑みなされたもので、その目的と
するところは、自公転基板ホルダ駆動系へのスパッタ粒
子の付着を防止して異物の発生を防ぐことは勿論、この
駆動系からの発塵を抑え、かつ、成膜面への影響を極力
少なくして、高品質な成膜を行なわせることのできるス
パッタリング装置を提供するにある。
The present invention has been made in view of the above points, and an object of the present invention is to prevent adhesion of sputtered particles to a rotation-and-revolution substrate holder drive system to prevent generation of foreign matter, as well as to prevent the generation of foreign matter. It is an object of the present invention to provide a sputtering apparatus capable of performing high-quality film formation while suppressing dust generation and minimizing the influence on the film formation surface.

〔課題を解決するための手段〕[Means for solving the problem]

本発明は上記目的を達成するために、2つの基板ホル
ダをそれぞれターゲット電極を支持する真空容器の両側
壁部に対向させて配置すると共に、該2つの基板ホルダ
間の平面空間内にほぼ円板状の自公転機構部を設け、か
つ、その自公転機構部の周縁部に永久磁石を極性を交互
にして近接して配置し、一方、基板を載置して自転する
基板支持板の周縁にも永久磁石を極性を交互にして配置
し、更に、基板ホルダの周縁部にも永久磁石を設け、か
つ、前記自公転機構部の外部には、前記基板ホルダを公
転させ、この基板ホルダの公転に伴い前記基板が自転す
る駆動力を与えるべく移動、もしくは強度を可変する磁
気発生源を備えているスパッタリング装置としたことを
特徴とする。
In order to achieve the above object, the present invention arranges two substrate holders so as to face both side wall portions of a vacuum container supporting a target electrode, respectively, and to form a substantially circular plate in a plane space between the two substrate holders. -Shaped rotation and revolution mechanism section is provided, and permanent magnets are arranged close to the periphery of the rotation and revolution mechanism section with alternating polarities, while on the other hand, on the periphery of the substrate support plate on which the substrate is placed and rotates. In addition, permanent magnets are arranged with alternating polarities, a permanent magnet is also provided on the peripheral edge of the substrate holder, and the substrate holder is revolved outside the auto-revolution mechanism section. Accordingly, the sputtering apparatus is provided with a magnetic generation source that moves or varies the strength so as to give a driving force for rotating the substrate.

〔作用〕[Action]

自公転機構周辺には永久磁石が極を交互にして配置さ
れている。このとき、この永久磁石をモータの回転子と
見做せば、回転駆動力を与える固定子を周囲に配置する
ことよりモータと同様となり、基板ホルダは公転が可能
となる。一方、基板支持板にも同様に交互に永久磁石の
極を配しておけば、基板ホルダが公転するに伴い、先と
同様の関係で、基板は自転が可能となる。
Permanent magnets are arranged around the self-revolving mechanism with alternating poles. At this time, if the permanent magnet is regarded as the rotor of the motor, the stator that gives the rotation driving force is arranged around the permanent magnet so that the permanent magnet is similar to the motor, and the substrate holder can revolve. On the other hand, by similarly arranging the poles of the permanent magnets alternately on the substrate support plate, as the substrate holder revolves, the substrate can rotate on the basis of the same relationship as above.

以上により、モータ伝達軸などを全く用いない非接触
式で基板ホルダ及び基板支持板を自公転させることがで
きる。
As described above, the substrate holder and the substrate support plate can be revolved in a non-contact manner without using a motor transmission shaft or the like.

〔実施例〕〔Example〕

以下、本発明の一実施例を第1図、及び第2図により
説明する。
An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

該図に示す如く、真空容器11の両壁には、成膜材とな
るべきターゲットを載置したターゲット電極12が取付け
られている。このターゲットにそれぞれほぼ対向する位
置には、基板ホルダ2が配置され、そしてこの基板ホル
ダの面上に成膜されるべき基板1を載置した基板支持板
3が複数個取り付けられている。この基板支持板3に
は、基板ホルダ2の反対側に自転用軸5を介して自転用
磁石板4が接続されている。自転用磁石板4には、図に
示すように互いに極性が異なる様に交互に磁石を周囲に
配置している。
As shown in the figure, target electrodes 12 on which targets to be film-forming materials are mounted are attached to both walls of the vacuum container 11. Substrate holders 2 are arranged at positions substantially facing each of the targets, and a plurality of substrate support plates 3 on which the substrates 1 to be deposited are placed are attached to the surface of the substrate holders. A magnet plate 4 for rotation is connected to the substrate support plate 3 on the opposite side of the substrate holder 2 via a shaft 5 for rotation. As shown in the figure, magnets are alternately arranged around the rotating magnet plate 4 so that the polarities thereof are different from each other.

一方、前記基板ホルダ2は、自公転機構部6の両側に
公転軸8を介して接続されている。自公転機構部6には
図に示すように周囲に互いに極性が異なるように磁石7
を配置している。
On the other hand, the substrate holder 2 is connected to both sides of the auto-revolution mechanism section 6 via a revolution shaft 8. As shown in the figure, the revolving mechanism 6 has magnets 7 arranged so as to have polarities different from each other.
Has been arranged.

また、下部には磁極を移動又は強度を可変可能にする
固定子コイルもしくは磁石からなる磁気装置9を配置し
ている。
Further, a magnetic device 9 composed of a stator coil or a magnet for moving the magnetic pole or changing the strength thereof is arranged in the lower part.

先ず、自公転機構部6の最下部に設けた磁気装置9の
磁極と異なる自公転機構部6の磁石7の極性部分が磁気
的に吸引される。即ち、磁石のS極とN極が吸引する。
次に、磁気装置9の極性を移動若しくは可変していく
と、自公転機構部6は磁気吸引力により力を受け動き出
していく。そして極性の移動若しくは極度の可変をくり
返していくと、所謂、モータと同じ原理で、自公転機構
部6はやがて駆動々力源である磁気装置9と被回転体で
ある基板ホルダ2とは非接触のまま回転をはじめること
になる。 次に、基板ホルダ2には、基板1のそれぞれ
に対し基板支持板3と自転用磁石板4を設けている。自
転用磁石板4の外周部は自公転機構部6に設けた磁石7
の列に対し、狭隙をはさんで対向若しくは自公転機構部
6に設けた磁石7の列に対して狭隙をはさんで内接する
ように配することにより、自公転機構部6の回転と共に
異極同志を磁気吸引力により引き合い、先と同様に回転
駆動力が伝達される。ここでも、駆動源となる磁石7の
列と被回転体となる基板支持板3とは非接触のまま回転
をはじめることになる。
First, the polar part of the magnet 7 of the auto-revolution mechanism 6 different from the magnetic pole of the magnetic device 9 provided at the bottom of the auto-revolution mechanism 6 is magnetically attracted. That is, the S and N poles of the magnet are attracted.
Next, when the polarity of the magnetic device 9 is moved or changed, the self-revolving mechanism section 6 receives a force by the magnetic attraction force and starts to move. When the movement of the polarity or the extreme change is repeated, the revolving mechanism section 6 eventually causes the magnetic device 9 which is a driving force source and the substrate holder 2 which is a rotated body to operate in the same principle as a so-called motor. It will start rotating with contact. Next, the substrate holder 2 is provided with a substrate support plate 3 and a rotation magnet plate 4 for each substrate 1. The outer periphery of the magnet plate 4 for rotation is a magnet 7 provided on the rotation mechanism part 6.
Of the magnet 7 provided in the revolving mechanism section 6 so as to be inscribed in the row of the magnets. At the same time, the different poles are attracted to each other by the magnetic attraction force, and the rotational driving force is transmitted as before. In this case as well, the row of the magnets 7 serving as the driving source and the substrate support plate 3 serving as the rotated body start rotating without being in contact with each other.

以上により、自公転機構部6の外部に設けた磁気装置
9を操作することにより、非接触状態で、基板ホルダ2
に設けた基板1を自公転させることができる。従つて機
構系に特有の摺動やまさつがなくなるため、自公転軸部
を除いて、異物の発生を抑えることが出来、高品質な成
膜が可能となる。
As described above, by operating the magnetic device 9 provided outside the auto-revolution mechanism unit 6, the substrate holder 2 can be brought into a non-contact state.
It is possible to revolve the substrate 1 provided on the substrate. Therefore, since the sliding and the hindrance peculiar to the mechanical system are eliminated, it is possible to suppress the generation of foreign matter except for the revolving shaft portion, and it is possible to form a high quality film.

更に、この機構部は、基板ホルダと基板ホルダとの間
に設けることにより、スパッタリングによる成膜材の付
着も殆どなくなり、更に異物を低減することが可能とな
る。
Further, by providing this mechanism section between the substrate holders, the deposition of the film-forming material due to sputtering is almost eliminated, and it is possible to further reduce foreign matters.

第3図、及び第4図に、他の実施例を示す。該図に示
す例は、先の磁気装置9のかわりに、自公転機構部6の
全周にわたり環状の固定子極10を設けたものである。こ
れによれば、自公転機構系が大きくなつても十分な駆動
力を得ることができる。
Another embodiment is shown in FIG. 3 and FIG. In the example shown in the figure, an annular stator pole 10 is provided over the entire circumference of the revolving mechanism 6 in place of the magnetic device 9 described above. According to this, a sufficient driving force can be obtained even if the auto-revolution mechanism system becomes large.

〔発明の効果〕〔The invention's effect〕

以上説明した本発明のスパッタリング装置によれば、
2つの基板ホルダをそれぞれターゲット電極を支持する
真空容器の両側壁部に対向させて配置すると共に、該2
つの基板ホルダ間の平面空間内にほぼ円板状の自公転機
構部を設け、かつ、その自公転機構部の周縁部に永久磁
石を極性を交互にして近接して配置し、一方、基板を載
置して自転する基板支持板の周縁にも永久磁石を極性を
交互にして配置し、更に、基板ホルダの周縁部にも永久
磁石を設け、かつ、前記自公転機構部の外部には、前記
基板ホルダを公転させ、この基板ホルダの公転に伴い前
記基板が自転する駆動力を与えるべく移動、もしくは強
度を可変する磁気発生源を備えているものであるから、 自公転基板ホルダ駆動系が2つの基板ホルダの間に配
置されているので、自公転基板ホルダ駆動系へのスパッ
タ粒子の付着を防止して異物の発生を防ぐことは勿論、
自公転基板ホルダの駆動機構部が運動、摩擦等機械的接
触部が不要の無接触式となるので、自公転基板ホルダの
駆動機構部からの発塵を抑え、かつ、成膜面への影響を
極力少なくすることができ、高品質な成膜を行なうこと
ができる。
According to the sputtering apparatus of the present invention described above,
The two substrate holders are arranged so as to face both side wall portions of the vacuum container supporting the target electrode, respectively.
A substantially disk-shaped revolving mechanism is provided in the plane space between two substrate holders, and permanent magnets are arranged close to the periphery of the revolving mechanism in alternating polarities. Permanent magnets are also arranged with alternating polarities also on the periphery of the substrate supporting plate that is placed and rotated, and further, permanent magnets are also provided on the peripheral portion of the substrate holder, and outside the rotation and revolution mechanism part, Since the substrate holder is revolved, and the substrate holder drive system is equipped with a magnetic generation source that moves or changes the strength to give a driving force for the substrate to rotate with the revolution of the substrate holder. Since it is arranged between the two substrate holders, it is of course possible to prevent the sputtered particles from adhering to the rotation / revolution substrate holder drive system to prevent the generation of foreign matter.
The drive mechanism part of the rotation substrate holder is a non-contact type that does not require mechanical contact parts such as movement and friction, so that dust generation from the drive mechanism part of the rotation substrate holder is suppressed and the influence on the film formation surface Can be minimized and high quality film formation can be performed.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明のスパッタリング装置を示す断面図、第
2図はその自公転機構部を一部断面して示す正面図、第
3図は本発明の他の実施例を示す断面図、第4図はその
自公転機構部を一部断面して示す正面図である。 1…基板、2…基板ホルダ、3…基板支持板、4…自転
用磁石板、5…自転用軸、6…自公転機構、7…磁石、
8…公転軸、9…磁気装置、10…固定子極、11…真空容
器、12…ターゲット電極。
FIG. 1 is a cross-sectional view showing a sputtering apparatus of the present invention, FIG. 2 is a front view showing a partially revolving mechanism part thereof in section, and FIG. 3 is a cross-sectional view showing another embodiment of the present invention. FIG. 4 is a front view showing a part of the auto-revolution mechanism section. DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Substrate holder, 3 ... Substrate support plate, 4 ... Rotation magnet plate, 5 ... Rotation shaft, 6 ... Revolution mechanism, 7 ... Magnet,
8 ... Revolution axis, 9 ... Magnetic device, 10 ... Stator pole, 11 ... Vacuum container, 12 ... Target electrode.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】成膜すべき基板を同心円上に複数保持した
基板ホルダが、真空容器の側壁に設けられているターゲ
ット電極と対向して垂直状態に保持されながら該基板ホ
ルダ面上で前記基板を自公転させて薄膜を形成するスパ
ッタリング装置において、 2つの前記基板ホルダをそれぞれ前記ターゲット電極を
支持する前記真空容器の両側壁部に対向させて配置する
と共に、該2つの基板ホルダ間の平面空間内にほぼ円板
状の自公転機構部を設け、かつ、その自公転機構部の周
縁部に永久磁石を極性を交互にして近接して配置し、一
方、前記基板を載置して自転する基板支持板の周縁にも
永久磁石を極性を交互にして配置し、更に、前記基板ホ
ルダの周縁部にも永久磁石を設け、かつ、前記自公転機
構部の外部には、前記基板ホルダを公転させ、この基板
ホルダの公転に伴い前記基板が自転する駆動力を与える
べく移動、もしくは強度を可変する磁気発生源を備えて
いることを特徴とするスパッタリング装置。
1. A substrate holder, which holds a plurality of substrates to be deposited on a concentric circle, is held vertically while facing a target electrode provided on a side wall of a vacuum container, and the substrate is held on the surface of the substrate holder. In a sputtering apparatus for forming a thin film by revolving the substrate, the two substrate holders are arranged so as to face both side wall portions of the vacuum container supporting the target electrode, respectively, and a plane space between the two substrate holders is arranged. A substantially disk-shaped revolving mechanism part is provided inside, and permanent magnets are arranged close to each other on the periphery of the revolving mechanism part with alternating polarities, while the substrate is placed and rotated. Permanent magnets are also arranged on the periphery of the substrate support plate with alternating polarities, and permanent magnets are also provided on the periphery of the substrate holder, and the substrate holder is revolved outside the rotation mechanism. Let A sputtering apparatus comprising a magnetic generation source capable of moving or varying the strength of the substrate holder so as to give a driving force for rotating the substrate holder around its axis.
JP2159762A 1990-06-20 1990-06-20 Sputtering device Expired - Fee Related JPH0826455B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2159762A JPH0826455B2 (en) 1990-06-20 1990-06-20 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2159762A JPH0826455B2 (en) 1990-06-20 1990-06-20 Sputtering device

Publications (2)

Publication Number Publication Date
JPH0452275A JPH0452275A (en) 1992-02-20
JPH0826455B2 true JPH0826455B2 (en) 1996-03-13

Family

ID=15700715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2159762A Expired - Fee Related JPH0826455B2 (en) 1990-06-20 1990-06-20 Sputtering device

Country Status (1)

Country Link
JP (1) JPH0826455B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59812047D1 (en) * 1997-12-22 2004-11-04 Unaxis Trading Ag Truebbach VACUUM TREATMENT PLANT
US6864773B2 (en) 2003-04-04 2005-03-08 Applied Materials, Inc. Variable field magnet apparatus
DE102006041137B4 (en) * 2006-09-01 2015-02-12 Carl Zeiss Vision Gmbh Apparatus for turning an article in a vacuum coating machine, method of turning an article in a vacuum coating machine, and use thereof
CN102644057A (en) * 2011-02-16 2012-08-22 鸿富锦精密工业(深圳)有限公司 Coating hanger
JP6507953B2 (en) 2015-09-08 2019-05-08 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
JP7158065B2 (en) * 2021-01-22 2022-10-21 株式会社シンクロン Deposition equipment

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0343233Y2 (en) * 1987-09-30 1991-09-10
JPH01114664U (en) * 1988-01-22 1989-08-02

Also Published As

Publication number Publication date
JPH0452275A (en) 1992-02-20

Similar Documents

Publication Publication Date Title
JP4037932B2 (en) Substrate rotating apparatus and substrate rotating method
US5284564A (en) Magnetron sputtering cathode for vacuum coating apparatus
JP3732250B2 (en) In-line deposition system
JP4437290B2 (en) Sputtering equipment
JPH1088336A (en) Sputtering device
JP4321785B2 (en) Film forming apparatus and film forming method
JPH0826455B2 (en) Sputtering device
JP2000282234A (en) Sputtering device
JPH01184277A (en) Substrate rotating device
JPS58144474A (en) Sputtering apparatus
JPH0428860A (en) Turntable for ion plating device
JP3056222B2 (en) Sputtering apparatus and sputtering method
JP2746695B2 (en) Sputtering apparatus and sputtering method
JP7158065B2 (en) Deposition equipment
US3625180A (en) Evaporation sources
JPH08134642A (en) Sputtering device
JP2011026652A (en) Apparatus for forming film on both surfaces
JPS6059991B2 (en) Rotation jig for vacuum evaporation equipment
JP3920955B2 (en) Sputtering equipment
JPS63100180A (en) Magnetron sputtering device
JP6997877B2 (en) Sputtering equipment and film formation method
JP4541014B2 (en) Plasma assisted sputter deposition system
JPH1046336A (en) Sputtering device
JPS62167619A (en) Magnetic disk film forming device
JPH11217669A (en) Magnetron device and sputtering device

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees