WO2019205228A1 - 一种oled屏幕及其制造方法 - Google Patents

一种oled屏幕及其制造方法 Download PDF

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Publication number
WO2019205228A1
WO2019205228A1 PCT/CN2018/089412 CN2018089412W WO2019205228A1 WO 2019205228 A1 WO2019205228 A1 WO 2019205228A1 CN 2018089412 W CN2018089412 W CN 2018089412W WO 2019205228 A1 WO2019205228 A1 WO 2019205228A1
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layer
thin film
peripheral region
oled
forming
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PCT/CN2018/089412
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English (en)
French (fr)
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曹皓然
千必跟
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武汉华星光电半导体显示技术有限公司
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Priority to US16/234,355 priority Critical patent/US10665649B2/en
Publication of WO2019205228A1 publication Critical patent/WO2019205228A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • the present invention relates to the field of screen display technologies, and in particular, to an OLED screen and a method of fabricating the same.
  • the mobile phone market is pursuing ultra-narrow bezels, and even no borders have become mainstream.
  • Major mobile phone manufacturing companies and screen R&D companies are actively engaged in research and development of related technologies. Due to its flexible and bendable characteristics, the OLED screen can be bent into a curved screen at the left and right frame positions, thereby shortening the width of the left and right borders.
  • the 3D glass has a low yield and a high cost. The screen of the mobile phone is easily broken after falling, and the left and right borders are still nearly 1 mm in size, and the borderless effect cannot be achieved.
  • the technical problem to be solved by the present invention is to provide an OLED screen and a manufacturing method thereof, which can realize a borderless display effect.
  • the present invention provides an OLED screen having a display area and a peripheral area located on the left and right sides of the display area, the OLED screen including:
  • a back sheet a polyimide layer, an array layer, an OLED layer, a thin film encapsulation layer, a polarizer, and a cover plate laminated in this order;
  • a mirror layer is disposed between the thin film encapsulation layer and the polarizer; at least a portion of the mirror layer at the peripheral region is not covered by the polarizer;
  • the portion of the cover plate in the peripheral region is not covered by ink.
  • the OLED layer includes a plurality of illuminating sub-pixels separated by a pixel defining layer, the pixel defining layer and the illuminating sub-pixel are provided with a cathode, and a cathode thickness on the pixel defining layer of the peripheral region is greater than The thickness of the cathode on the illuminating sub-pixel.
  • the thickness of the pixel defining layer in the peripheral region is smaller than the thickness of the pixel defining layer between adjacent two illuminating sub-pixels.
  • the array layer comprises a buffer layer, a thin film transistor disposed on the buffer layer, a planarization layer disposed on the thin film transistor, a cathode, a pixel defining layer and a planarization layer facing the peripheral region
  • the thin film transistor is bent and forms a first bend angle with the initial position; or bent away from the thin film transistor and forms a second bend angle with the initial position.
  • first bending angle and the second bending angle are both in the range of 0° to 60°.
  • the mirror layer is located in the display area.
  • the polarizer is located in the peripheral region.
  • the mirror layer is a single layer structure or a metal silver layer of a multilayer structure.
  • the invention also provides a method for manufacturing an OLED screen, comprising the following steps:
  • Providing a polarizer on the thin film encapsulation layer providing a mirror layer between the thin film encapsulation layer and the polarizer, and leaving at least a portion of the mirror layer at the peripheral region not the polarizer cover;
  • a cover plate is disposed on the polarizer, and a portion of the cover plate in the peripheral region is not covered by ink.
  • the forming the array layer specifically includes: forming a buffer layer, forming a thin film transistor on the buffer layer, and forming a planarization layer on the thin film transistor;
  • the beneficial effects of the embodiments of the present invention are: by providing a mirror layer on the peripheral regions on the left and right sides of the display area, at least a portion of the mirror layer is not covered by the polarizer above it, and the cover plate above the polarizer is not covered by the ink.
  • the OLED screen is illuminated, the light emitted by the OLED layer can be transmitted from the peripheral area to achieve a borderless display effect; and when the OLED layer is not illuminated, the mirror layer can reflect external light to achieve the display effect of the mirror type OLED. And can avoid observing the traces in the surrounding area from the outside;
  • the thickness of the cathode on the pixel defining layer in the peripheral region is greater than the thickness of the cathode on the illuminating sub-pixel, thereby further enhancing the mirror display effect;
  • the cathode, the pixel defining layer and the flattening layer in the peripheral region By bending the cathode, the pixel defining layer and the flattening layer in the peripheral region, the light emitted from the illuminating sub-pixels close to the peripheral region is easily reflected at an appropriate angle to form a better borderless display effect.
  • FIG. 1 is a side view showing the structure of an OLED screen according to an embodiment of the present invention.
  • FIG. 2 is a side view showing a specific structure of an OLED screen according to an embodiment of the present invention.
  • FIG. 3 is a schematic front view showing the structure of an OLED screen according to an embodiment of the present invention.
  • FIG. 4 is a schematic side view showing another specific structure of an OLED screen according to an embodiment of the present invention.
  • FIG. 5 is a schematic side view showing a specific structure of an OLED screen according to an embodiment of the present invention.
  • FIG. 6 is a schematic flow chart of a method for manufacturing an OLED screen according to Embodiment 2 of the present invention.
  • an embodiment of the present invention provides an OLED screen having a display area 1 and a peripheral area 2 located on the left and right sides of the display area 1.
  • the OLED screen includes:
  • a back sheet 10 10, a polyimide layer 11, an array layer 12, an OLED layer 13, a thin film encapsulation layer 14, a polarizer 30, and a cover 40 laminated in this order;
  • a mirror layer 20 is disposed between the thin film encapsulation layer 14 and the polarizer 30, and at least a portion of the mirror layer 20 at the peripheral region 2 is not covered by the polarizer 30;
  • the portion 400 of the cover 40 in the peripheral region 2 is not covered by ink.
  • the mirror layer 20 at the peripheral region 2 is not covered by the polarizer 30 above it, and the cover 40 above the polarizer 30 is also not covered by the ink, and is spotted on the OLED screen.
  • the light emitted by the OLED layer 13 can be transmitted from the peripheral region 2, and the display effect without the border can be realized.
  • the mirror layer 20 can reflect the external light to achieve the display effect of the mirror-type OLED. And can avoid observing the traces in the peripheral area 2 from the outside.
  • the OLED screen of the present embodiment is a laminated structure having a thickness
  • the defined display area 1 and the peripheral area 2 are also a laminated structure having a thickness.
  • FIG. 1 shows the present embodiment.
  • the edge, the peripheral area 2 is an area between the first edge line e1 and the second edge line e2.
  • the left side of the display area 1 also has a left side peripheral area which is identical in configuration and symmetrically arranged with the peripheral area 2 on the right side.
  • the OLED screen replaces the glass in the LCD panel with the polyimide layer 11 as a substrate of the display screen, and an array process is performed thereon, and a back plate is attached under the polyimide layer 12 (Back Plate, BP) 10, the back plate 10 is made of PET plastic (Polyethylene terephthalate), which can improve the stiffness of the OLED display, prevent the display from being too soft, and at the same time make the display screen have certain flexibility.
  • PET plastic Polyethylene terephthalate
  • the array layer 12 is formed on the polyimide layer 11 to which the back sheet 10 is attached, and the array layer 12 serves as a TFT array substrate, and the OLED layer of the upper layer is controlled to emit light.
  • the OLED layer 13 and the Thin Film Encapsulation (TFE) 14 are formed in a predetermined area, and the OLED layer 13 functions as an organic light-emitting layer to realize light emission of the pixel; the thin film encapsulation layer 14 functions to encapsulate the light-emitting layer. Prevent moisture from damaging the materials and devices of the luminescent layer.
  • FIG. 2 is a schematic diagram of a specific structure of the array layer 12 and the structure thereon in the OLED screen shown in FIG. 1.
  • the array layer 12 includes a buffer layer 120, a thin film transistor (TFT) 121 disposed on the buffer layer 120, A planarization layer 122 disposed on the thin film transistor 121, an anode (Anode) 123 disposed on the planarization layer 122 and contacting the thin film transistor 121 through a contact hole, and the OLED layer 13 includes a plurality of illumination sub-pixels 130 Each of the illuminating sub-pixels 130 is separated by a Pixel Definition Layer (PDL) 15 disposed on the anode 123 and the planarization layer 122 to prevent color mixture from occurring.
  • PDL Pixel Definition Layer
  • a cathode 16 is disposed on the pixel defining layer 15 and the illuminating sub-pixel 130.
  • the main component of the cathode 16 is a metal such as magnesium (Mg) or silver (Ag), if the cathode 160 on the pixel defining layer 150 of the peripheral region 2 is added. If the illuminating sub-pixels 130 are not illuminated, the peripheral region 2 can exhibit a mirror-like effect. When the illuminating sub-pixels 130 are illuminated, the illuminating sub-pixels 130 can be displayed normally, thereby achieving a borderless display effect.
  • the cathode 160 on the pixel defining layer 150 of the peripheral region 2 is also performed.
  • the thickening process causes the thickness of the cathode 160 on the pixel defining layer 150 to be greater than the thickness of the cathode 161 on the illuminating sub-pixel 130.
  • the thickness of the pixel defining layer 150 in the peripheral region 2 is reduced to be smaller than the thickness of the pixel defining layer 151 between the adjacent two illuminating sub-pixels 130, such that the illuminating sub-pixel 130 located at the edge of the display region 1 is emitted.
  • the light will not be blocked by the pixel definition layer 150 and will be reflected by the cathode 160 to achieve a borderless display.
  • the mirror layer 20 in this embodiment is a single-layer structure or a multi-layered metal silver layer (Ag), which can be formed by deposition or evaporation.
  • the mirror layer 20 can be suitably covered over the display area 1, ie the mirror layer 20 can be partially located within the display area 1.
  • the polarizer 30 is also located in the peripheral region 2, and its edge line is as shown by the third edge line e3 in FIG.
  • the edge line of the cathode 16 is as shown by the fourth edge line e4 in FIG. 2, and the third edge line e3 and the fourth edge line e4 are located between the first edge line e1 and the second edge line e2.
  • the peripheral areas of the left and right ends of the cover plate can print ink; as shown in FIG. 3, the OLED screen of the embodiment cancels the ink printing of the left and right peripheral regions 2 of the cover plate 40, that is, the cover plate.
  • the portion 400 of the peripheral region 2 is not covered with ink, so that the peripheral region 2 at the time of display is shortened, and a display effect without a frame is achieved.
  • the present embodiment also applies the cathode 160, the pixel defining layer 150 and the planarization layer in the peripheral region 2.
  • the bending process is performed. Specifically, please refer to FIG. 4 and FIG. 5 respectively, wherein FIG. 4 shows that the cathode 160, the pixel defining layer 150 and the planarizing layer 122 in the peripheral region 2 are bent toward the thin film transistor 121. And forming a first bending angle ⁇ 1 with the initial position; FIG.
  • the cathode 160, the pixel defining layer 150, and the planarizing layer 122 in the peripheral region 2 are bent away from the thin film transistor 121, and form a first position with the initial position.
  • the first bending angle ⁇ 1 and the second bending angle ⁇ 2 are both in the range of 0° to 60°, and the specific size is determined by the display effect, and can be verified by experiments.
  • the OLED screen corresponding to the first embodiment of the present invention provides a method for manufacturing an OLED display screen, which includes the following steps:
  • Providing a polarizer on the thin film encapsulation layer providing a mirror layer between the thin film encapsulation layer and the polarizer, and leaving at least a portion of the mirror layer at the peripheral region not the polarizer cover;
  • a cover plate is disposed on the polarizer, and a portion of the cover plate in the peripheral region is not covered by ink.
  • the forming the array layer specifically includes: forming a buffer layer, forming a thin film transistor on the buffer layer, and forming a planarization layer on the thin film transistor;
  • the array layer 12 is formed on the polyimide layer 11 to which the back sheet 10 is attached, and the array layer 12 is used as a TFT array substrate to control the upper layer of the OLED. Layer 13 illuminates.
  • the foregoing array layer 12 includes a buffer layer 120, a thin film transistor (TFT) 121 disposed on the buffer layer 120, a planarization layer 122 disposed on the thin film transistor 121, a planarization layer 122 disposed through the contact hole and the thin film transistor 121 contiguous anode 123, OLED layer 13 includes a plurality of illuminating sub-pixels 130, each illuminating sub-pixel 130 being spaced apart by a pixel defining layer 15 disposed on anode 123 and planarizing layer 122 to prevent color mixing.
  • a cathode 16 is disposed on the pixel defining layer 15 and the illuminating sub-pixel 130.
  • the main component of the cathode 16 is a metal such as magnesium (Mg) or silver (Ag), if the cathode 160 on the pixel defining layer 150 of the peripheral region 2 is added. If the illuminating sub-pixels 130 are not illuminated, the peripheral region 2 can exhibit a mirror-like effect. When the illuminating sub-pixels 130 are illuminated, the illuminating sub-pixels 130 can be displayed normally, thereby achieving a borderless display effect. Therefore, in addition to providing the mirror layer 20 between the thin film encapsulation layer 14 and the polarizer 30, in order to further enhance the mirror effect of the peripheral region 2, the cathode 160 on the pixel defining layer 150 of the peripheral region 2 is also performed.
  • Mg magnesium
  • Ag silver
  • the thickening process causes the thickness of the cathode 160 on the pixel defining layer 150 to be greater than the thickness of the cathode 161 on the illuminating sub-pixel 130. Further, the thickness of the pixel defining layer 150 in the peripheral region 2 is reduced to be smaller than the thickness of the pixel defining layer 151 between the adjacent two illuminating sub-pixels 130, such that the illuminating sub-pixel 130 located at the edge of the display region 1 is emitted. The light will not be blocked by the pixel definition layer 150 and will be reflected by the cathode 160 to achieve a borderless display.
  • the mirror layer 20 in this embodiment is a single-layer structure or a multi-layered metal silver layer, which can be formed by deposition or evaporation.
  • the present embodiment also applies the cathode 160, the pixel defining layer 150 and the planarization layer in the peripheral region 2.
  • the bending process is performed. Specifically, please refer to FIG. 4 and FIG. 5 respectively, wherein FIG. 4 shows that the cathode 160, the pixel defining layer 150 and the planarizing layer 122 in the peripheral region 2 are bent toward the thin film transistor 121. And forming a first bending angle ⁇ 1 with the initial position; FIG.
  • the cathode 160, the pixel defining layer 150, and the planarizing layer 122 in the peripheral region 2 are bent away from the thin film transistor 121, and form a first position with the initial position.
  • the first bending angle ⁇ 1 and the second bending angle ⁇ 2 are both in the range of 0° to 60°, and the specific size is determined by the display effect, and can be verified by experiments.
  • the beneficial effect of the embodiment of the present invention is that by providing the mirror layer on the peripheral regions on the left and right sides of the display area, at least a part of the mirror layer is not covered by the polarizer above it, and the cover plate above the polarizer is also Without being covered by the ink, when the OLED screen is illuminated, the light emitted by the OLED layer can be transmitted from the peripheral area to achieve a borderless display effect; and when the OLED layer is not illuminated, the mirror layer can reflect the external light to reach the mirror.
  • the display effect of the OLED and can avoid the observation of the traces in the surrounding area from the outside;
  • the thickness of the cathode on the pixel defining layer in the peripheral region is greater than the thickness of the cathode on the illuminating sub-pixel, thereby further enhancing the mirror display effect;
  • the cathode, the pixel defining layer and the flattening layer in the peripheral region By bending the cathode, the pixel defining layer and the flattening layer in the peripheral region, the light emitted from the illuminating sub-pixels close to the peripheral region is easily reflected at an appropriate angle to form a better borderless display effect.

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Abstract

本发明提供一种OLED屏幕及其制造方法，其中，OLED屏幕具有显示区域(1)和位于所述显示区域(1)左右两侧的周边区域(2)，所述OLED屏幕包括：依次叠层的背板(10)、聚酰亚胺层(11)、阵列层(12)、OLED层(13)、薄膜封装层(14)、偏光片(30)和盖板(40)；所述薄膜封装层(14)与所述偏光片(30)之间设有镜面层(20)，处于所述周边区域(2)处的所述镜面层(20)至少有一部分未被所述偏光片(30)覆盖；所述盖板(40)处于所述周边区域(2)的部分(400)未被油墨覆盖。本发明在OLED屏幕被点亮时，OLED层发出的光可以从周边区域处透射出来，实现无边框的显示效果。

Description

一种OLED屏幕及其制造方法
本申请要求于2018年4月24日提交中国专利局、申请号为201810372504.4、发明名称为“一种OLED屏幕及其制造方法”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及屏幕显示技术领域，尤其涉及一种OLED屏幕及其制造方法。
背景技术
目前，手机市场追求超窄边框，甚至无边框成为主流。各大手机制造公司以及屏幕研发制造公司都在积极开展相关技术的研发工作。OLED屏幕因其具有柔性可弯折的特点，可以实现在左右边框位置弯折成曲屏的效果，进而缩短左右边框的宽度。但是3D玻璃良率低，成本高，手机屏幕跌落后极易破碎，且左右边框仍然有近1mm大小，无法实现无边框效果。
发明内容
本发明所要解决的技术问题在于，提供一种OLED屏幕及其制造方法，能够实现无边框显示效果。
为了解决上述技术问题，本发明提供一种OLED屏幕，具有显示区域和位于所述显示区域左右两侧的周边区域，所述OLED屏幕包括：
依次叠层的背板、聚酰亚胺层、阵列层、OLED层、薄膜封装层、偏光片和盖板；
所述薄膜封装层与所述偏光片之间设有镜面层，处于所述周边区域处的所述镜面层至少有一部分未被所述偏光片覆盖；
所述盖板处于所述周边区域的部分未被油墨覆盖。
其中，所述OLED层包括被像素定义层隔开的多个发光子像素，所述像素定义层和所述发光子像素上设置有阴极，处于所述周边区域的像素定义层上的阴极厚度大于所述发光子像素上的阴极厚度。
其中，处于所述周边区域的所述像素定义层的厚度小于相邻两发光子像素之间的像素定义层的厚度。
其中，所述阵列层包括缓冲层、设置在所述缓冲层上的薄膜晶体管、设置在所述薄膜晶体管上的平坦化层，处于所述周边区域的阴极、像素定义层和平坦化层朝向所述薄膜晶体管弯折，并与初始位置形成第一弯折角；或者朝远离所述薄膜晶体管方向弯折，并与初始位置形成第二弯折角。
其中，所述第一弯折角和所述第二弯折角均在0°到60°范围。
其中，所述镜面层至少有一部分位于所述显示区域内。
其中，所述偏光片至少有一部分位于所述周边区域内。
其中，所述镜面层为单层结构或多层结构的金属银层。
本发明还提供一种OLED屏幕的制造方法，包括以下步骤：
在定义有显示区域和位于所述显示区域左右两侧的周边区域形成依次叠层的背板、聚酰亚胺层、阵列层、OLED层；
在所述OLED层上的发光子像素和用于隔开发光子像素的像素定义层上形成阴极，并使处于所述周边区域的像素定义层上的阴极厚度大于所述发光子像素上的阴极厚度；
形成薄膜封装层，对所述背板、聚酰亚胺层、阵列层、OLED层进行封装；
在所述薄膜封装层上设置偏光片，在所述薄膜封装层与所述偏光片之间设置镜面层，并使处于所述周边区域处的所述镜面层至少有一部分未被所述偏光片覆盖；
在所述偏光片上设置盖板，并使所述盖板处于所述周边区域的部分不被油墨覆盖。
其中，形成所述阵列层具体包括：形成缓冲层、在所述缓冲层上形成薄膜晶体管、在所述薄膜晶体管上形成平坦化层；
将处于所述周边区域的阴极、像素定义层和平坦化层朝向所述薄膜晶体管弯折，并与初始位置形成第一弯折角；或者朝远离所述薄膜晶体管方向弯折，并与初始位置形成第二弯折角。
本发明实施例的有益效果在于：通过在显示区域左右两侧的周边区域设 置镜面层，镜面层至少有一部分未被其上方的偏光片覆盖，同时偏光片上方的盖板也未被油墨覆盖，在OLED屏幕被点亮时，OLED层发出的光可以从周边区域处透射出来，实现无边框的显示效果；而在OLED层未发光时，镜面层可以反射外部光线，达到镜子型OLED的显示效果，并能避免从外部观察到周边区域中的走线；
通过对处于周边区域的像素定义层上的阴极进行加厚处理，使处于周边区域的像素定义层上的阴极的厚度大于发光子像素上的阴极的厚度，进一步增强镜面显示效果；
通过对处于周边区域的阴极、像素定义层和平坦化层进行弯折处理，便于靠近周边区域的发光子像素发出的光以适当的角度反射，形成更好的无边框显示效果。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例一一种OLED屏幕的侧视结构示意图。
图2是本发明实施例一一种OLED屏幕的侧视具体结构示意图。
图3是本发明实施例一一种OLED屏幕的正视结构示意图。
图4是本发明实施例一一种OLED屏幕的另一侧视具体结构示意图。
图5是本发明实施例一一种OLED屏幕的又一侧视具体结构示意图。
图6本发明实施例二一种OLED屏幕的制造方法的流程示意图。
具体实施方式
以下各实施例的说明是参考附图，用以示例本发明可以用以实施的特定实施例。
请参照图1所示，本发明实施例一提供一种OLED屏幕，具有显示区域1和位于所述显示区域1左右两侧的周边区域2，所述OLED屏幕包括：
依次叠层的背板10、聚酰亚胺层11、阵列层12、OLED层13、薄膜封装层14、偏光片30和盖板40；
所述薄膜封装层14与所述偏光片30之间设有镜面层20，处于所述周边区域2处的所述镜面层20至少有一部分未被所述偏光片30覆盖；
所述盖板40处于所述周边区域2的部分400未被油墨覆盖。
本实施例的OLED屏幕中，处于周边区域2处的镜面层20至少有一部分未被其上方的偏光片30覆盖，同时偏光片30上方的盖板40也未被油墨覆盖，在OLED屏幕被点亮时，OLED层13发出的光可以从周边区域2处透射出来，可以实现无边框的显示效果；而在OLED层13未发光时，镜面层20可以反射外部光线，达到镜子型OLED的显示效果，并能避免从外部观察到周边区域2中的走线。
需要说明的是，本实施例的OLED屏幕是一个具有厚度的叠层结构，定义的显示区域1和周边区域2亦同样为具有厚度的叠层结构，作为一个示例，图1所示为本实施例OLED屏幕的显示区域1和位于其右侧的周边区域2，其中第一边缘线e1标示了显示区域1的右侧边缘，第二边缘线e2标示了显示区域1右侧的周边区域2的边缘，周边区域2即处于第一边缘线e1和第二边缘线e2之间的区域。可以理解地，在显示区域1的左侧也同样具有一个相同结构并且与右侧的周边区域2对称设置的左侧周边区域。
本实施例OLED屏幕采用聚酰亚胺层11替代LCD面板中的玻璃，作为显示屏的基板，在其上进行array制程，并且在聚酰亚胺层12之下贴合背板(Back Plate，BP)10，背板10的材质为PET塑料(Polyethylene terephthalate)，可以提高OLED显示屏的挺性，防止显示屏过软，同时又使得显示屏具有一定的柔性。在制作时，在贴有背板10的聚酰亚胺层11上制作阵列层12，阵列层12作为TFT阵列基板，控制其上层的OLED层发光。根据设计要求，在预定区域继续形成OLED层13和薄膜封装层(Thin Film Encapsulation，TFE)14，OLED层13作为有机发光层，实现像素的发光；薄膜封装层14作用是对发光层进行封装，防止水汽对发光层材料、器件造成损害。
请同时参照图2所示，为图1所示OLED屏幕中阵列层12以及其上结构的具体结构示意图，阵列层12包括缓冲层120、设置在缓冲层120上的薄膜晶体管(TFT)121、设置在薄膜晶体管121上的平坦化层(Planarization Layer)122、设置在平坦化层122上并且通过接触孔与薄膜晶体管121相接 的阳极(Anode)123，OLED层13包括多个发光子像素130，各发光子像素130被设置在阳极123和平坦化层122上的像素定义层(Pixel Definition Layer，PDL)15隔开，以防止出现混色。在像素定义层15和发光子像素130上设置有阴极16，阴极16的主要成分为镁(Mg)或银(Ag)等金属，如果对处于周边区域2的像素定义层150上的阴极160加厚，则在发光子像素130不发光时，周边区域2可以呈现类似镜子的效果，当发光子像素130发光时又可以正常显示，实现无边框的显示效果。因此，本实施例除了在薄膜封装层14与偏光片30之间设有镜面层20以外，为进一步增强周边区域2的镜面效果，还对处于周边区域2的像素定义层150上的阴极160进行加厚处理，使像素定义层150上的阴极160的厚度大于发光子像素130上的阴极161的厚度。进一步地，减小处于周边区域2的像素定义层150的厚度，使其小于相邻两发光子像素130之间的像素定义层151的厚度，这样，位于显示区域1边缘的发光子像素130发出的光将不会受到像素定义层150的阻挡，并通过阴极160得到反射，达到无边框的显示效果。
本实施例中的镜面层20为单层结构或多层结构的金属银层(Ag)，可以通过沉积或蒸镀形成。为了保证光学效果，镜面层20可以适当盖过显示区域1，即镜面层20可以部分地位于显示区域1内。同样地，偏光片30也至少有一部分位于周边区域2内，其边缘线如图2中第三边缘线e3所示。阴极16的边缘线如图2中第四边缘线e4所示，第三边缘线e3和第四边缘线e4位于第一边缘线e1和第二边缘线e2之间。
可以理解的是，在通常的OLED屏幕中，盖板左右两端的周边区域会印刷油墨；如图3所示，本实施例的OLED屏幕取消盖板40左右周边区域2的油墨印刷，即盖板40处于周边区域2的部分400未被油墨覆盖，使显示时的周边区域2得到缩短，实现无边框的显示效果。
为了便于靠近周边区域2的发光子像素130发出的光以适当的角度反射，形成更好的无边框显示效果，本实施例还对处于周边区域2的阴极160、像素定义层150和平坦化层122进行弯折处理，具体地，请分别参照图4和图5所示，其中图4所示为将处于周边区域2的阴极160、像素定义层150和平坦化层122朝向薄膜晶体管121弯折，并与初始位置形成第一弯折角α1； 图5所示为将处于周边区域2的阴极160、像素定义层150和平坦化层122朝远离薄膜晶体管121方向弯折，并与初始位置形成第二弯折角α2。第一弯折角α1和第二弯折角α2均在0°到60°范围，其具体大小由显示效果决定，可通过实验验证。
再请参照图6所示，相应于本发明实施例一的OLED屏幕，本发明实施例二提供一种OLED显示屏幕的制造方法，包括以下步骤：
在定义有显示区域和位于所述显示区域左右两侧的周边区域形成依次叠层的背板、聚酰亚胺层、阵列层、OLED层；
在所述OLED层上的发光子像素和用于隔开发光子像素的像素定义层上形成阴极，并使处于所述周边区域的像素定义层上的阴极厚度大于所述发光子像素上的阴极厚度；
形成薄膜封装层，对所述背板、聚酰亚胺层、阵列层、OLED层进行封装；
在所述薄膜封装层上设置偏光片，在所述薄膜封装层与所述偏光片之间设置镜面层，并使处于所述周边区域处的所述镜面层至少有一部分未被所述偏光片覆盖；
在所述偏光片上设置盖板，并使所述盖板处于所述周边区域的部分不被油墨覆盖。
其中，形成所述阵列层具体包括：形成缓冲层、在所述缓冲层上形成薄膜晶体管、在所述薄膜晶体管上形成平坦化层；
将处于所述周边区域的阴极、像素定义层和平坦化层朝向所述薄膜晶体管弯折，并与初始位置形成第一弯折角；或者朝远离所述薄膜晶体管方向弯折，并与初始位置形成第二弯折角。
请结合前述图1-图5所示，在制作OLED显示屏幕时，在贴有背板10的聚酰亚胺层11上制作阵列层12，阵列层12作为TFT阵列基板，控制其上层的OLED层13发光。前述的阵列层12包括缓冲层120、设置在缓冲层120上的薄膜晶体管(TFT)121、设置在薄膜晶体管121上的平坦化层122、设置在平坦化层122上并且通过接触孔与薄膜晶体管121相接的阳极123，OLED层13包括多个发光子像素130，各发光子像素130被设置在阳极123 和平坦化层122上的像素定义层15隔开，以防止出现混色。在像素定义层15和发光子像素130上设置有阴极16，阴极16的主要成分为镁(Mg)或银(Ag)等金属，如果对处于周边区域2的像素定义层150上的阴极160加厚，则在发光子像素130不发光时，周边区域2可以呈现类似镜子的效果，当发光子像素130发光时又可以正常显示，实现无边框的显示效果。因此，本实施例除了在薄膜封装层14与偏光片30之间设有镜面层20以外，为进一步增强周边区域2的镜面效果，还对处于周边区域2的像素定义层150上的阴极160进行加厚处理，使像素定义层150上的阴极160的厚度大于发光子像素130上的阴极161的厚度。进一步地，减小处于周边区域2的像素定义层150的厚度，使其小于相邻两发光子像素130之间的像素定义层151的厚度，这样，位于显示区域1边缘的发光子像素130发出的光将不会受到像素定义层150的阻挡，并通过阴极160得到反射，达到无边框的显示效果。
具体地，本实施例中的镜面层20为单层结构或多层结构的金属银层，可以通过沉积或蒸镀形成。
为了便于靠近周边区域2的发光子像素130发出的光以适当的角度反射，形成更好的无边框显示效果，本实施例还对处于周边区域2的阴极160、像素定义层150和平坦化层122进行弯折处理，具体地，请分别参照图4和图5所示，其中图4所示为将处于周边区域2的阴极160、像素定义层150和平坦化层122朝向薄膜晶体管121弯折，并与初始位置形成第一弯折角α1；图5所示为将处于周边区域2的阴极160、像素定义层150和平坦化层122朝远离薄膜晶体管121方向弯折，并与初始位置形成第二弯折角α2。第一弯折角α1和第二弯折角α2均在0°到60°范围，其具体大小由显示效果决定，可通过实验验证。
通过上述说明可知，本发明实施例的有益效果在于：通过在显示区域左右两侧的周边区域设置镜面层，镜面层至少有一部分未被其上方的偏光片覆盖，同时偏光片上方的盖板也未被油墨覆盖，在OLED屏幕被点亮时，OLED层发出的光可以从周边区域处透射出来，实现无边框的显示效果；而在OLED层未发光时，镜面层可以反射外部光线，达到镜子型OLED的显示效果，并能避免从外部观察到周边区域中的走线；
通过对处于周边区域的像素定义层上的阴极进行加厚处理，使处于周边区域的像素定义层上的阴极的厚度大于发光子像素上的阴极的厚度，进一步增强镜面显示效果；
通过对处于周边区域的阴极、像素定义层和平坦化层进行弯折处理，便于靠近周边区域的发光子像素发出的光以适当的角度反射，形成更好的无边框显示效果。
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，因此依本发明权利要求所作的等同变化，仍属本发明所涵盖的范围。

Claims (10)

  1. 一种OLED屏幕，其中，具有显示区域(1)和位于所述显示区域(1)左右两侧的周边区域(2)，所述OLED屏幕包括：
    依次叠层的背板(10)、聚酰亚胺层(11)、阵列层(12)、OLED层(13)、薄膜封装层(14)、偏光片(30)和盖板(40)；
    所述薄膜封装层(14)与所述偏光片(30)之间设有镜面层(20)，处于所述周边区域(2)处的所述镜面层(20)至少有一部分未被所述偏光片(30)覆盖；
    所述盖板(40)处于所述周边区域(2)的部分(400)未被油墨覆盖。
  2. 根据权利要求1所述的OLED屏幕，其中，所述OLED层(13)包括被像素定义层(15)隔开的多个发光子像素(130)，所述像素定义层(15)和所述发光子像素(130)上设置有阴极(16)，处于所述周边区域(2)的像素定义层(150)上的阴极(160)厚度大于所述发光子像素(130)上的阴极(161)厚度。
  3. 根据权利要求2所述的OLED屏幕，其中，处于所述周边区域(2)的所述像素定义层(150)的厚度小于相邻两发光子像素(130)之间的像素定义层(151)的厚度。
  4. 根据权利要求2所述的OLED屏幕，其中，所述阵列层(12)包括缓冲层(120)、设置在所述缓冲层(120)上的薄膜晶体管(121)、设置在所述薄膜晶体管(121)上的平坦化层(122)，处于所述周边区域(2)的阴极(160)、像素定义层(150)和平坦化层(122)朝向所述薄膜晶体管(121)弯折，并与初始位置形成第一弯折角；或者朝远离所述薄膜晶体管(121)方向弯折，并与初始位置形成第二弯折角。
  5. 根据权利要求4所述的OLED屏幕，其中，所述第一弯折角和所述第二弯折角均在0°到60°范围。
  6. 根据权利要求1所述的OLED屏幕，其中，所述镜面层(20)至少有一部分位于所述显示区域(1)内。
  7. 根据权利要求1所述的OLED屏幕，其中，所述偏光片(30)至少有一部分位于所述周边区域(2)内。
  8. 根据权利要求1所述的OLED屏幕，其中，所述镜面层(20)为单层结构或多层结构的金属银层。
  9. 一种OLED屏幕的制造方法，其中，包括以下步骤：
    在定义有显示区域和位于所述显示区域左右两侧的周边区域形成依次叠层的背板、聚酰亚胺层、阵列层、OLED层；
    在所述OLED层上的发光子像素和用于隔开发光子像素的像素定义层上形成阴极，并使处于所述周边区域的像素定义层上的阴极厚度大于所述发光子像素上的阴极厚度；
    形成薄膜封装层，对所述背板、聚酰亚胺层、阵列层、OLED层进行封装；
    在所述薄膜封装层上设置偏光片，在所述薄膜封装层与所述偏光片之间设置镜面层，并使处于所述周边区域处的所述镜面层至少有一部分未被所述偏光片覆盖；
    在所述偏光片上设置盖板，并使所述盖板处于所述周边区域的部分不被油墨覆盖。
  10. 根据权利要求9所述的制造方法，其中，形成所述阵列层具体包括：形成缓冲层、在所述缓冲层上形成薄膜晶体管、在所述薄膜晶体管上形成平坦化层；
    将处于所述周边区域的阴极、像素定义层和平坦化层朝向所述薄膜晶体管弯折，并与初始位置形成第一弯折角；或者朝远离所述薄膜晶体管方向弯折，并与初始位置形成第二弯折角。
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