WO2019198312A1 - Dispositif de conversion de puissance - Google Patents

Dispositif de conversion de puissance Download PDF

Info

Publication number
WO2019198312A1
WO2019198312A1 PCT/JP2019/003736 JP2019003736W WO2019198312A1 WO 2019198312 A1 WO2019198312 A1 WO 2019198312A1 JP 2019003736 W JP2019003736 W JP 2019003736W WO 2019198312 A1 WO2019198312 A1 WO 2019198312A1
Authority
WO
WIPO (PCT)
Prior art keywords
power
cooler
conversion device
power converter
power conversion
Prior art date
Application number
PCT/JP2019/003736
Other languages
English (en)
Japanese (ja)
Inventor
研吾 後藤
智道 伊藤
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Publication of WO2019198312A1 publication Critical patent/WO2019198312A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating

Definitions

  • the present invention relates to a power conversion device that converts AC power and DC power having a cooling function.
  • IGBT insulated gate bipolar transistors
  • the element temperature rises due to the influence of the heat generated in other semiconductor modules in addition to the current flowing through the element. there's a possibility that.
  • the element life may be shortened or the electric characteristics of the element may be deteriorated.
  • Patent Document 1 includes a heat exchange means capable of adjusting the cooling capacity for detecting the internal temperature and the external temperature of the power conversion device and exchanging heat between the inside and the outside, and from the detection of the electric power generated by the solar panel.
  • a configuration is described in which the temperature rise inside the power conversion device is predicted and the cooling capacity of the heat exchange means is increased before the heat generation of the semiconductor element.
  • the forced air cooling method is a method in which, for example, the element temperature is lowered by forcing air to a heat sink that contacts the semiconductor element.
  • the forced water cooling method is a method in which a water channel is formed in a heat sink that is in contact with a semiconductor element, and the element temperature is lowered by flowing water through the water channel.
  • the cooling of the semiconductor element is designed so that the maximum temperature of the junction is not more than the temperature specified by the semiconductor element under the condition of the maximum heat generation amount, and the cooling capacity is changed according to the heat generation amount of the semiconductor element. Not set. Under such conditions, when the ambient temperature of the semiconductor element rises significantly due to external factors, the temperature of the semiconductor element rises, which may cause a semiconductor element failure.
  • Patent Document 1 since the temperature change width of the semiconductor element can be suppressed, it is possible to reduce the temperature stress applied to the semiconductor element used in the power conversion device.
  • the present invention has been made to solve this drawback, and reduces the temperature stress of the semiconductor element without disposing a temperature sensor inside the power converter, and further reduces the efficiency without reducing the efficiency. Can be driven.
  • a power converter includes a power converter including a semiconductor element that converts power supplied from a DC power source into AC power, a cooler that cools the semiconductor element, and the cooler.
  • a power conversion device including a power source for driving, a controller for controlling driving of the cooler, and a detector for measuring outside air temperature, the controller for controlling driving of the cooler controls the outside air temperature. The cooling operation is determined according to the value of the detector to be measured.
  • the present invention it is possible to reduce the temperature stress of the semiconductor element and improve the power conversion efficiency of the power converter.
  • FIG. 1 is a diagram illustrating a configuration of a power conversion device 100 according to a first embodiment of the present invention.
  • a power conversion apparatus 100 according to the first embodiment illustrated in FIG. 1 includes a semiconductor element 102 that converts DC power into an AC power source, and a cooler 103 that cools the semiconductor element.
  • the power converter 100 is connected to a DC power source 101 and a load 104, and DC power output from the DC power source 101 is converted into AC power and supplied to the load 104.
  • FIG. 2 is a diagram showing a configuration when the AC power output from the AC power source 105 is converted into DC power and supplied to the load 104.
  • the cooling capacity of the cooler 103 is determined by the cooler drive system 110a.
  • the cooling drive system 110 a has a configuration in which the cooling command value 112 determined by the cooler control unit 111 according to the outside air temperature detected by the outside air temperature detection unit 114 is input to the cooler power source 113.
  • the cooler drive system 110a may be configured as a part of the power conversion apparatus 100.
  • the cooler control unit 111 includes an interface for receiving measurement values from an external sensor such as the outside air temperature detection unit 114.
  • the external sensor includes a sensor that is used to acquire information that is measured outside the power conversion device, such as outside air temperature and power generation amount information, or is collected outside.
  • the semiconductor element 2 converts the DC power supplied from the DC power supply 101 into AC power by switching such as PWM (Pulse Width Modulation) and outputs the AC power to the load 104. At this time, the semiconductor element generates a switching loss due to switching by PWM and a conduction loss caused by flowing the element.
  • PWM Pulse Width Modulation
  • the loss of the semiconductor element will be described by taking the IGBT as an example.
  • Formula (1), (2) Indicates the conduction loss of the freewheeling diode arranged in parallel with the IGBT and IGBT.
  • the conduction loss of a semiconductor element is a loss determined by the product of the current flowing during conduction and the voltage across the element.
  • Equations (3) and (4) show the switching loss of the IGBT
  • equation (5) shows the recovery loss of the diode.
  • the switching loss is proportional to the PWM switching frequency f sw and increases as the switching frequency increases. When this switching frequency is high, the switching loss is larger than the conduction loss, and occupies most of the element loss.
  • the IGBT is used for description, but the semiconductor device such as a MOSFET is not limited thereto.
  • P ss is the IGBT conduction loss
  • I is the IGBT semiconductor element current
  • V CE is the IGBT voltage
  • P sd is a diode conduction loss
  • I is a diode current
  • V ak is a diode ON voltage
  • P on is the IGBT turn-on loss
  • f sw is the switching frequency
  • E on is the turn-on loss per pulse.
  • P off is the IGBT turn-off loss
  • f sw is the switching frequency
  • E off is the turn-off loss per pulse.
  • P err is the IGBT recovery loss
  • f sw is the switching frequency
  • E err is the recovery loss per pulse.
  • FIG. 3 shows an example of the current dependency of the ON voltage of the semiconductor element 102.
  • the ON voltage is a voltage applied to both ends of the semiconductor when the semiconductor element is conductive.
  • the high temperature characteristic 202 has a higher ON voltage than the low temperature characteristic 201. If the current is the same from equation (1), the conduction loss increases at high temperatures when the ON voltage is high.
  • FIG. 4 shows an example of the current dependency of the recovery loss of the diode in the semiconductor element 102. Similar to FIG. 3, the recovery loss high temperature characteristic 204 has a characteristic that the recovery loss low temperature characteristic 203 is larger than the recovery loss low temperature characteristic 203, and the recovery loss increases according to the equation (5). Further, FIG.
  • the turn-on loss high temperature characteristic 206 has a characteristic that the turn-on loss high temperature characteristic 205 is larger than the turn-on low temperature characteristic 205, and the switching loss increases according to the equation (4).
  • the loss characteristics due to the temperature difference of the semiconductor element 102 described with reference to FIGS. 4 and 5 become more prominent when the switching frequency is high.
  • Semiconductor elements include power and insulating materials from the chip that is a heat generating element to the semiconductor element case and heat sink, and it acts as a thermal resistance against the heat generated in the chip.
  • the IGBT is composed of a chip, a base, and the like, but each material has a heat capacity calculated in accordance with the mass and specific heat as well as the heat resistance, and the temperature changes with a time constant determined by the heat capacity and the heat resistance.
  • FIG. 6 shows a schematic diagram of the transient thermal resistance of the IGBT.
  • the junction temperature 220 of the IGBT is calculated by the thermal circuit configured in FIG.
  • the IGBT steady junction temperature 220 is calculated by the junction-case thermal resistance 210, the case-heat sink thermal resistance 211, the heat sink-ambient thermal resistance 212, and the ambient temperature 223 with the IGBT loss 209 as an input.
  • the transient junction temperature of the IGBT is calculated by a thermal circuit obtained by adding the thermal capacity 213 of the chip, the thermal capacity 214 of the module, and the thermal capacity 215 of the heat sink to the above-described thermal resistance.
  • the transient junction temperature of the IGBT is expressed by Equation (6)
  • the steady junction temperature is expressed by Equation (7).
  • the junction temperature increases as the ambient temperature Ta increases.
  • T j is the IGBT junction temperature
  • Ta is the ambient temperature
  • C c is the chip heat capacity
  • C m is the module temperature
  • Ch is the heat sink heat capacity
  • R th is the junction surface-case thermal resistance
  • R cf is the case- The heat resistance between the heat sinks
  • R ta is the heat resistance between the heat sink and the surroundings
  • ⁇ is the frequency.
  • FIG. 7 shows a cooling device according to the first embodiment.
  • the semiconductor element 102 is installed on the air-cooling heat sink 103a and radiated through the heat sink heat radiating portion 103b.
  • the thermal resistance is determined by the shape of the heat radiating portion 103b of the heat sink, but it is possible to suppress the thermal resistance by forcing the cooling fan 103c to apply air to the 103b.
  • Natural convection will be explained using a vertical plate as an example. Natural convection heat transfer is expressed by equation (8).
  • Nu is the Nusselt number
  • Gr is the Grashof number
  • Pr is the Prandtl number
  • L is the plate length
  • ⁇ is the heat transfer coefficient
  • ⁇ is the thermal conductivity of the fluid
  • g is the gravitational acceleration
  • ⁇ is the volume expansion coefficient
  • v is the kinematic viscosity coefficient
  • Tw is the plate temperature
  • Ta is the fluid temperature. It has become.
  • the heat transfer coefficient in the air at 20 ° C is expressed by equation (11) and is determined by the difference between the fluid temperature and the target heating element temperature.
  • Equations (11) and (15) are calculated by taking the characteristics of air at 20 ° C. as an example, but the coefficient also changes in the case of water cooling, and the forced convection heat transfer coefficient is Increase.
  • FIG. 8 shows the cooling device according to the first embodiment, in which the semiconductor element 102 is disposed on the water cooling heat sink 103d, and in the water cooling heat sink 103d, there is a water channel from the water inlet 103e to the main portion of 103f. Cooled by flowing water.
  • the thermal resistance of the water-cooled heat sink is determined by the flow rate determined by the flow rate of the water inlet and the cross-sectional area of the water channel, and the thermal resistance can be lowered by increasing the flow rate. In this way, when forcibly cooling with a fan or cooling with water, adjusting the cooling fan or water cooling pump can change the flow rate of cooling air or cooling water and make the cooling capacity variable. .
  • the power conversion device can be driven without deteriorating the power conversion efficiency. Further, when the ambient temperature is low, the loss generated in the power supply of the cooling system can be suppressed by setting the cooling capacity low.
  • the description is given with the power conversion device 100 that converts DC power into AC power, but the same effect can be obtained with the power conversion device that converts AC power into DC power shown in FIG. Moreover, the same effect is acquired also as an apparatus with which the output of the power supply of the cooler described in Example 1 increases according to a rise in outside air temperature, for example, a solar panel. Further, the same effect can be obtained even with a power source that can absorb the loss generated in the power converter as heat energy.
  • FIG. 9 shows the power conversion apparatus 100 according to the second embodiment.
  • the difference from the first embodiment is configured by the power conversion device output detection unit 106 instead of the outside air temperature detection unit 114, and detects the power conversion device output value 115 between the power conversion device 100 and the load 104.
  • the part 106 is configured.
  • symbol is used about the same component as Example 1, and duplication description is abbreviate
  • the power loss of the semiconductor element 102 increases as the current increases. Therefore, when the power converter output value 115 is large, the junction temperature of the semiconductor element increases, and the efficiency of the semiconductor element increases. Decreases. Further, when the power converter output value 115 is small, the junction temperature of the semiconductor element becomes low, so the decrease in efficiency is small. Even if the cooler command value is a low design value under the condition that the junction temperature of the semiconductor element is low, the efficiency is not lowered.
  • the output detection unit is used in the second embodiment, the same effect can be obtained even if the output detection unit is configured.
  • the power conversion device 100 that converts DC power to AC power is described.
  • the same effect can be obtained by a power conversion device that converts AC power to DC power. .
  • FIG. 11 shows the power conversion apparatus 100 according to the third embodiment.
  • the difference from the first embodiment is that the outside air temperature detecting unit 114 is composed of the outside humidity detecting unit 116.
  • symbol is used about the same component as Example 1, and duplication description is abbreviate
  • Equation (16) is an equation indicating the relative humidity and the lifetime of the semiconductor element. As shown in Expression (16), the lifetime L of the semiconductor element is shortened as the relative humidity and temperature increase. Therefore, when the external humidity 117 is high, increasing the cooling capacity of the semiconductor element can reduce the element temperature, thereby prolonging the element life.
  • L is the semiconductor lifetime
  • A is the acceleration coefficient
  • n is the relative humidity coefficient
  • RH is the relative humidity
  • Ea is the activation energy
  • V is the voltage
  • K is the Boltzmann constant
  • T is the absolute temperature.
  • the power conversion device 100 that converts DC power into AC power is described.
  • the same effect can be obtained with a power conversion device that converts AC power into DC power. .
  • FIG. 13 shows a power converter according to the fourth embodiment.
  • the outside air temperature detection unit 114 includes a semiconductor power cycle number detection unit 118.
  • symbol is used about the same component as Example 1, and duplication description is abbreviate
  • FIG. 14 shows the relationship between the amount of change in the case temperature and the lifetime of the semiconductor element according to Example 4. Since semiconductor elements repeatedly increase and decrease in temperature according to the conditions under which they are used, fatigue and deterioration progress due to thermal stress. This deterioration corresponds to the deterioration of the aluminum wire bonding portion on the chip surface of the semiconductor element and the deterioration of the solder bonding portion used for bonding between the insulating substrate and the base. This fatigue and deterioration greatly depends on the temperature rise / fall range. This thermal stress is called power cycle life. A semiconductor device has a defined power cycle life, and as shown in FIG. 14, the power cycle life depends on the amount of change in junction temperature. As in the fourth embodiment, when the number of power cycles of the semiconductor becomes equal to or higher than a certain level, the temperature increase width can be reduced and the increase in the number of power cycles can be suppressed by increasing the cooling capacity.
  • the power conversion device 100 that converts DC power into AC power is described. However, as shown in FIG. 15, the same effect can be obtained with a power conversion device that converts AC power into DC power. .
  • FIG. 16 shows a power converter according to the fifth embodiment.
  • the outside air temperature detection unit 114 includes a load output detection unit 120 and a load output accumulation unit 121.
  • symbol is used about the same component as Example 1, and duplication description is abbreviate
  • FIG. 17 shows an example of the seasonality of the power generation amount of the wind power generation system as an example of the load according to the fifth embodiment.
  • the bar in FIG. 17 represents the power generation output for each month.
  • Wind power generation systems vary greatly depending on the season, and this seasonal variation is particularly large in regions where power generation is high.
  • the power conversion efficiency of a power converter device is designed according to a rated output, when operating with the output lower than a rating, power conversion efficiency deteriorates. Therefore, it is possible to reduce the power conversion efficiency and increase the amount of power transmission by making the load output a database in the storage unit and making the system improve the cooling capacity more than usual during the period when the load output decreases. Become.
  • Renewable energy is set as a frame of power transmission as a mechanism to ensure the stability of the power system, but there are cases where the amount of power generation is lower than the frame due to seasonality and weather conditions. Reducing this difference may be more important for system stability, etc. than using additional power for cooling. For example, in order to transmit more generated power, there is a control mode for improving the cooling capacity in order to improve the power conversion efficiency than usual, and the reduction in the amount of power generation can be suppressed.
  • the wind power generation system has been described as an example.
  • load output data is accumulated even in a system with different output characteristics depending on the season, such as a solar power generation system and other natural energy power sources, and the load pattern is obtained. Accordingly, it is possible to suppress a decrease in power conversion efficiency by determining the cooling capacity accordingly.
  • the power conversion device 100 that converts DC power into AC power is described.
  • the same effect can be obtained with a power conversion device that converts AC power into DC power.
  • the control is performed for each month or season, but the control can be switched by another time span.
  • FIG. 19 shows the power conversion apparatus 100 according to the sixth embodiment.
  • the difference from the first embodiment is that the outside air temperature detection unit 114 is configured by the load output prediction unit 122.
  • symbol is used about the same component as Example 1, and duplication description is abbreviate
  • the load output prediction unit is configured to perform output prediction via a wind speed prediction unit disposed at a position downstream of the wind turbine and adjust the cooling capacity.
  • the weather prediction unit can predict the weather in advance, perform output prediction according to the weather prediction, and adjust the cooling capacity.
  • the description is given with the power conversion device that converts the DC power into the AC power.
  • the same effect can be obtained with the power conversion device that converts the AC power into the DC power.
  • Power converter 101. DC power supply, 102. Semiconductor element, 103. Cooler, 103a. Air cooling heat sink, 103b. Heat sink heat sink for air cooling, 103c. Fan, 103d. Heat sink for water cooling, 103e. Water-cooled water inlet, 103f. Water-cooled water discharge section, 104. Load, 105. AC power supply, 106.
  • a cooling system including a load output prediction unit; Cooler controller, 112. Cooler command value, 113. Cooler power supply, 114. Outside air temperature detector, 115. Output detection value, 116. Humidity detection unit, 117. External humidity detection value 118. Cycle number detection unit, 119. Number of cycles, 120. Load output detector 121. Load output storage section, 122. Load output prediction unit, 123. Load output predicted value 201. 202. ON voltage current dependency of semiconductor element at low temperature; 203. ON voltage current dependency of semiconductor element at high temperature, 204. Recovery loss current dependency of semiconductor element at low temperature Dependence on recovery loss current of semiconductor element at high temperature, 205. Dependence on switching loss current of semiconductor element at low temperature, 206. 209.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention aborde le problème de la fourniture d'un dispositif de conversion de puissance supprimant l'abaissement de l'efficacité de conversion due à l'augmentation de la température environnante du dispositif de conversion de puissance et capable de réduire la contrainte de température sur les éléments semi-conducteurs. Le dispositif de conversion de puissance est équipé d'un refroidisseur pour refroidir les éléments semi-conducteurs à l'intérieur du dispositif de conversion de puissance, le refroidisseur à semi-conducteur pouvant augmenter l'efficacité de conversion de puissance du dispositif de conversion de puissance en augmentant la capacité de refroidissement lorsque la température extérieure est élevée et en abaissant la température des éléments.
PCT/JP2019/003736 2018-04-11 2019-02-01 Dispositif de conversion de puissance WO2019198312A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-075829 2018-04-11
JP2018075829A JP2019187105A (ja) 2018-04-11 2018-04-11 電力変換装置

Publications (1)

Publication Number Publication Date
WO2019198312A1 true WO2019198312A1 (fr) 2019-10-17

Family

ID=68163977

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/003736 WO2019198312A1 (fr) 2018-04-11 2019-02-01 Dispositif de conversion de puissance

Country Status (2)

Country Link
JP (1) JP2019187105A (fr)
WO (1) WO2019198312A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09126138A (ja) * 1995-10-31 1997-05-13 Kawamoto Seisakusho:Kk 給水装置
JPH10290561A (ja) * 1997-04-14 1998-10-27 Hitachi Ltd 電力変換器
JP2009213262A (ja) * 2008-03-04 2009-09-17 Sharp Corp 電力変換装置およびそれを用いた発電システム
JP2012244825A (ja) * 2011-05-23 2012-12-10 Mitsubishi Electric Corp 電力変換装置
JP2016140167A (ja) * 2015-01-27 2016-08-04 トヨタ自動車株式会社 冷却システム
JP2016146737A (ja) * 2015-02-03 2016-08-12 パナソニックＩｐマネジメント株式会社 冷却装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09126138A (ja) * 1995-10-31 1997-05-13 Kawamoto Seisakusho:Kk 給水装置
JPH10290561A (ja) * 1997-04-14 1998-10-27 Hitachi Ltd 電力変換器
JP2009213262A (ja) * 2008-03-04 2009-09-17 Sharp Corp 電力変換装置およびそれを用いた発電システム
JP2012244825A (ja) * 2011-05-23 2012-12-10 Mitsubishi Electric Corp 電力変換装置
JP2016140167A (ja) * 2015-01-27 2016-08-04 トヨタ自動車株式会社 冷却システム
JP2016146737A (ja) * 2015-02-03 2016-08-12 パナソニックＩｐマネジメント株式会社 冷却装置

Also Published As

Publication number Publication date
JP2019187105A (ja) 2019-10-24

Similar Documents

Publication Publication Date Title
KR101366880B1 (ko) 온도 제어형 태양광 전력 인버터들을 포함하는 태양광 전력 인버터들, 및 연관된 시스템들 및 방법들
CN106256176A (zh) 电子设备
CN101470449B (zh) 散热控制系统及其散热控制方法
US20120096871A1 (en) Dynamic switching thermoelectric thermal management systems and methods
JP2007181312A (ja) 電力変換装置、及びその制御方法
JP2017184298A (ja) 電力変換装置
CN108072819B (zh) Igbt的失效检测方法和装置
JP5206483B2 (ja) 電力変換装置の冷却システム
Wang et al. High-efficiency photovoltaic-thermoelectric hybrid energy harvesting system based on functionally multiplexed intelligent thermal management
Chang et al. Thermal Consideration and Design for a 200 kW SiC-Based High-Density Three-Phase Inverter in More Electric Aircraft
WO2019198312A1 (fr) Dispositif de conversion de puissance
Belarbi et al. Experimental investigation on controlled cooling by coupling of thermoelectric and an air impinging jet for CPU
JP6653122B2 (ja) 電動圧縮機、制御装置及び監視方法
JP2018042355A (ja) 電力変換装置及び電力変換方法
JPWO2016170584A1 (ja) 電力変換装置
CN117030307A (zh) 一种基于智能功率模块晶圆结温的散热评估方法和系统
JP5195507B2 (ja) 閉鎖型電力変換ユニットの内部空気温度推定方法および電力変換装置の冷却システム
JP7065687B2 (ja) 熱電変換装置
JP2007089256A (ja) Ｄｃ−ｄｃコンバータ、半導体モジュール及びその温度検出装置
Zhang et al. Optimized thermoelectric module-heat sink assemblies for precision temperature control
Nguyen et al. Effect of potting materials on LED bulb's driver temperature
Szobolovszky et al. Waste heat recovery in solid-state lighting based on thin film thermoelectric generators
US20080186671A1 (en) Cooling device of heating element and an electronic device using the same
JP2017147260A (ja) ヒートシンク
Cosaert et al. Thermal properties of power terminals in High Power IGBT modules

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19785120

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19785120

Country of ref document: EP

Kind code of ref document: A1