WO2019194539A1 - Élément thermoélectrique - Google Patents

Élément thermoélectrique Download PDF

Info

Publication number
WO2019194539A1
WO2019194539A1 PCT/KR2019/003878 KR2019003878W WO2019194539A1 WO 2019194539 A1 WO2019194539 A1 WO 2019194539A1 KR 2019003878 W KR2019003878 W KR 2019003878W WO 2019194539 A1 WO2019194539 A1 WO 2019194539A1
Authority
WO
WIPO (PCT)
Prior art keywords
resin layer
electrodes
disposed
resin
metal substrate
Prior art date
Application number
PCT/KR2019/003878
Other languages
English (en)
Korean (ko)
Inventor
노명래
이종민
조용상
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020190036097A external-priority patent/KR102095243B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to CN202311444498.6A priority Critical patent/CN117460385A/zh
Priority to CN202311446808.8A priority patent/CN117460387A/zh
Priority to JP2020553583A priority patent/JP7442456B2/ja
Priority to CN202311444909.1A priority patent/CN117460386A/zh
Priority to EP19781406.4A priority patent/EP3764410B1/fr
Priority to EP23200135.4A priority patent/EP4277454A3/fr
Priority to CN201980024692.4A priority patent/CN112041996B/zh
Priority to US17/041,695 priority patent/US12063860B2/en
Publication of WO2019194539A1 publication Critical patent/WO2019194539A1/fr
Priority to JP2024023757A priority patent/JP2024056966A/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/856—Thermoelectric active materials comprising organic compositions

Definitions

  • the present invention relates to a thermoelectric element, and more particularly to a junction structure of a thermoelectric element.
  • Thermoelectric phenomenon is a phenomenon caused by the movement of electrons and holes in a material, and means a direct energy conversion between heat and electricity.
  • thermoelectric device is a generic term for a device using a thermoelectric phenomenon, and has a structure in which a P-type thermoelectric material and an N-type thermoelectric material are bonded between metal electrodes to form a PN junction pair.
  • Thermoelectric elements may be classified into a device using a temperature change of the electrical resistance, a device using the Seebeck effect, a phenomenon in which electromotive force is generated by a temperature difference, a device using a Peltier effect, a phenomenon in which endothermic or heat generation by current occurs. .
  • thermoelectric devices have been applied to a variety of home appliances, electronic components, communication components, and the like.
  • the thermoelectric element may be applied to a cooling device, a heating device, a power generating device, or the like. Accordingly, the demand for thermoelectric performance of thermoelectric elements is increasing.
  • the thermoelectric element includes a substrate, an electrode, and a thermoelectric leg, and a plurality of thermoelectric legs are arranged in an array form between the upper substrate and the lower substrate, and a plurality of upper electrodes are disposed between the plurality of thermoelectric legs and the upper substrate. A plurality of lower electrodes are disposed between the thermoelectric leg and the lower substrate.
  • thermoelectric element may be disposed on a metal support.
  • the upper substrate and the lower substrate included in the thermoelectric element are ceramic substrates, heat loss may occur due to thermal resistance at the interface between the ceramic substrate and the metal support.
  • the technical problem to be achieved by the present invention is to provide a junction structure of a thermoelectric element.
  • thermoelectric device is disposed on a first metal substrate, the first metal substrate, a first resin layer in direct contact with the first metal substrate, and a plurality of thermoelectric elements disposed on the first resin layer.
  • the height of the side surface embedded in the first resin layer may be 0.1 to 1 times the thickness of the plurality of first electrodes.
  • the thickness of the first resin layer between two neighboring first electrodes may decrease from the side of each first electrode toward the center region between the two neighboring first electrodes.
  • the thickness of the first resin layer under the plurality of first electrodes may be smaller than the thickness of the first resin layer in the central region between the two neighboring first electrodes.
  • the distribution of the inorganic filler in the first resin layer under the plurality of first electrodes may be different from the distribution of the inorganic filler in the first resin layer between the two neighboring first electrodes.
  • the particle size D50 of the inorganic filler in the first resin layer under the plurality of first electrodes may be smaller than the particle size D50 of the inorganic filler in the first resin layer between two neighboring first electrodes.
  • the surface facing the first resin layer of the first metal substrate may include a first region and a second region disposed inside the first region, and the surface roughness of the second region may be a surface of the first region. Larger than the roughness, the first resin layer may be disposed on the second region.
  • the display device may further include a sealing part disposed between the first metal substrate and the second metal substrate, and the sealing part may be disposed on the first area.
  • the sealing part may include a sealing case disposed at a predetermined distance from a side surface of the first resin layer and a side surface of the second resin layer, and a sealing material disposed between the sealing case and the first region.
  • the first resin layer may include 20 to 40 wt% of the polymer resin and 60 to 80 wt% of the inorganic filler.
  • the polymer resin may include at least one of an epoxy resin, an acrylic resin, a urethane resin, a polyamide resin, a polyethylene resin, an EVA (Ethylene-Vinyl Acetate copolymer) resin, a polyester resin, and a polyvinyl chloride (PVC) resin.
  • the inorganic filler may include at least one of aluminum oxide, boron nitride and aluminum nitride.
  • the second resin layer may include the same material as the first resin layer.
  • thermoelectric device having excellent thermal conductivity, low heat loss, and high reliability.
  • thermoelectric device according to the embodiment of the present invention has a high bonding strength with the metal support, and the manufacturing process is simple.
  • thermoelectric device 1 is a cross-sectional view of a thermoelectric device according to an exemplary embodiment of the present invention.
  • thermoelectric device 2 is a top view of a metal substrate included in a thermoelectric device according to an exemplary embodiment of the present invention.
  • thermoelectric device 3 is a cross-sectional view of a metal substrate side of a thermoelectric device according to an exemplary embodiment of the present invention.
  • FIG. 4 is an enlarged view of a region of FIG. 3.
  • thermoelectric device 5 is a top view of a metal substrate included in a thermoelectric device according to another exemplary embodiment of the present invention.
  • thermoelectric device 6 is a cross-sectional view of the metal substrate side of the thermoelectric device including the metal substrate of FIG. 5.
  • thermoelectric device 7 is a cross-sectional view of a thermoelectric device according to still another embodiment of the present invention.
  • thermoelectric device 8 is a perspective view of the thermoelectric device of FIG. 7.
  • thermoelectric device of FIG. 7 is an exploded perspective view of the thermoelectric device of FIG. 7.
  • thermoelectric device 10 shows a method of manufacturing a thermoelectric device according to an embodiment of the present invention.
  • FIG. 11 is a block diagram of a water purifier to which a thermoelectric element according to an exemplary embodiment of the present invention is applied.
  • thermoelectric element 12 is a block diagram of a refrigerator to which a thermoelectric element according to an exemplary embodiment of the present invention is applied.
  • ordinal numbers such as second and first
  • first and second components may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another.
  • second component may be referred to as the first component, and similarly, the first component may also be referred to as the second component.
  • FIG. 1 is a cross-sectional view of a thermoelectric device according to an embodiment of the present invention
  • Figure 2 is a top view of a metal substrate included in the thermoelectric device according to an embodiment of the present invention
  • Figure 3 is an embodiment of the present invention 4 is a cross-sectional view of the metal substrate side of the thermoelectric device
  • FIG. 4 is an enlarged view of a region of FIG. 5 is a top view of a metal substrate included in a thermoelectric device according to another exemplary embodiment of the present invention
  • FIG. 6 is a cross-sectional view of the metal substrate side of the thermoelectric device including the metal substrate of FIG. 5.
  • the thermoelectric element 100 includes a first resin layer 110, a plurality of first electrodes 120, a plurality of P-type thermoelectric legs 130, a plurality of N-type thermoelectric legs 140, and a plurality of thermoelectric elements 100.
  • the plurality of first electrodes 120 are disposed between the first resin layer 110, the plurality of P-type thermoelectric legs 130, and the lower surfaces of the plurality of N-type thermoelectric legs 140, and the plurality of second electrodes 150.
  • a pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 disposed between the first electrode 120 and the second electrode 150 and electrically connected to each other may form a unit cell.
  • a pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 may be disposed on each first electrode 120, and each of the first electrodes 120 may be disposed on each of the first electrodes 120.
  • the pair of N-type thermoelectric legs 140 and the P-type thermoelectric legs 130 may be disposed to overlap one of the pair of P-type thermoelectric legs 130 and the N-type thermoelectric legs 140.
  • the substrate flowing current from the P-type thermoelectric leg 130 to the N-type thermoelectric leg 140 due to the Peltier effect absorbs heat
  • the substrate that acts as a cooling unit and flows current from the N-type thermoelectric leg 140 to the P-type thermoelectric leg 130 may be heated to act as a heat generating unit.
  • electric charges in the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 are moved due to the Seebeck effect, and electricity is generated. It may be.
  • the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be bismuth fluoride (Bi-Te) -based thermoelectric legs including bismuth (Bi) and tellurium (Te) as main materials.
  • P-type thermoelectric leg 130 is antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium relative to the total weight 100wt%
  • a mixture comprising 99 to 99.999 wt% of bismustelulide (Bi-Te) -based main raw material including at least one of (Ga), tellurium (Te), bismuth (Bi) and indium (In) and Bi or Te 0.001 It may be a thermoelectric leg including to 1wt%.
  • the main raw material is Bi-Se-Te, and may further include Bi or Te as 0.001 to 1wt% of the total weight.
  • N-type thermoelectric leg 140 is selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium relative to the total weight 100wt%
  • a mixture comprising 99 to 99.999 wt% of bismustelulide (Bi-Te) -based main raw material including at least one of (Ga), tellurium (Te), bismuth (Bi) and indium (In) and Bi or Te 0.001
  • the main raw material is Bi-Sb-Te, and may further include Bi or Te as 0.001 to 1wt% of the total weight.
  • the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be formed in a bulk type or a stacked type.
  • the bulk P-type thermoelectric leg 130 or the bulk N-type thermoelectric leg 140 is heat-treated thermoelectric material to produce an ingot (ingot), crushed and ingot to obtain a powder for thermoelectric leg, then Sintering, and can be obtained through the process of cutting the sintered body.
  • the stacked P-type thermoelectric leg 130 or the stacked N-type thermoelectric leg 140 is formed by applying a paste including a thermoelectric material on a sheet-shaped substrate to form a unit member, and then stacking and cutting the unit members. Can be obtained.
  • the pair of P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may have the same shape and volume, or may have different shapes and volumes.
  • the height or the cross-sectional area of the N-type thermoelectric leg 140 is the height or the cross-sectional area of the P-type thermoelectric leg 130. It can also be formed differently.
  • thermoelectric performance index ZT
  • Equation 1 The thermoelectric performance index (ZT) can be expressed as in Equation 1.
  • ⁇ is the Seebeck coefficient [V / K]
  • sigma is the electrical conductivity [S / m]
  • ⁇ 2 sigma is the Power Factor [W / mK 2 ].
  • T is the temperature and k is the thermal conductivity [W / mK].
  • k can be represented by a ⁇ c p ⁇ ⁇ , a is thermal diffusivity [cm 2 / S], c p is specific heat [J / gK], and ⁇ is density [g / cm 3 ].
  • thermoelectric performance index of the thermoelectric device the Z value (V / K) may be measured using a Z meter, and the Seebeck index (ZT) may be calculated using the measured Z value.
  • the plurality of first electrodes 120 disposed between the first resin layer 110, the P-type thermoelectric leg 130, and the N-type thermoelectric leg 140, and the second resin layer 160 and the P-type thermoelectric may include at least one of copper (Cu), silver (Ag), and nickel (Ni).
  • the sizes of the first resin layer 110 and the second resin layer 160 may be formed differently.
  • the volume, thickness, or area of one of the first resin layer 110 and the second resin layer 160 may be greater than the volume, thickness, or area of the other. Accordingly, the heat absorbing performance or heat dissipation performance of the thermoelectric element can be improved.
  • the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a cylindrical shape, a polygonal pillar shape, an elliptical pillar shape and the like.
  • the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a stacked structure.
  • the P-type thermoelectric leg or the N-type thermoelectric leg may be formed by stacking a plurality of structures coated with a semiconductor material on a sheet-shaped substrate and then cutting them. As a result, it is possible to prevent loss of material and to improve electrical conduction characteristics.
  • the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may be manufactured according to a zone melting method or a powder sintering method.
  • a zone melting method an ingot is manufactured by using a thermoelectric material, and then, by slowly applying heat to the ingot, the particles are rearranged so as to be rearranged in a single direction, and the thermoelectric leg is slowly cooled.
  • the powder sintering method after manufacturing an ingot using a thermoelectric material, the ingot is pulverized and sieved to obtain a thermoelectric leg powder, and the thermoelectric leg is obtained through the sintering process.
  • the first resin layer 110 is disposed on the first metal substrate 170 so as to directly contact the first metal substrate 170, and the second metal substrate 180 is disposed on the second metal substrate 180.
  • the second resin layer 160 may be disposed to directly contact 180.
  • the first metal substrate 170 and the second metal substrate 180 may be made of aluminum, aluminum alloy, copper, copper alloy, aluminum-copper alloy, or the like.
  • the first metal substrate 170 and the second metal substrate 180 may include the first resin layer 110, the plurality of first electrodes 120, the plurality of P-type thermoelectric legs 130, and the plurality of N-type thermoelectric legs ( 140, the plurality of second electrodes 150, the second resin layer 160, and the like, and at least one of the first metal substrate 170 and the second metal substrate 180 is an embodiment of the present invention.
  • the thermoelectric device 100 according to the present invention may be an area directly attached to an application to which the thermoelectric device 100 is applied. Accordingly, the first metal substrate 170 and the second metal substrate 180 may be mixed with the first metal support and the second metal support, respectively.
  • An area of the first metal substrate 170 may be larger than an area of the first resin layer 110, and an area of the second metal substrate 180 may be larger than an area of the second resin layer 160. That is, the first resin layer 110 may be disposed in an area spaced apart from the edge of the first metal substrate 170 by a predetermined distance, and the second resin layer 160 may be disposed from the edge of the second metal substrate 180. It may be disposed in an area spaced by a predetermined distance.
  • the width of the first metal substrate 170 may be greater than the width of the second metal substrate 180, or the thickness of the second metal substrate 180 may be greater than the thickness of the first metal substrate 170. .
  • the total area of the first metal substrate 170 may be larger than the total area of the second metal substrate 180.
  • the first metal substrate 170 may be a heat dissipation unit for dissipating heat
  • the second metal substrate 180 may be an endothermic unit for absorbing heat.
  • a plurality of protruding patterns may be disposed on at least one of the opposite surfaces. This protruding pattern may be a heat sink.
  • the first resin layer 110 and the second resin layer 160 may be made of a resin composition containing a polymer resin and an inorganic filler.
  • the polymer resin may be any material when the polymer resin includes a polymer material provided with a function of insulation, adhesion or heat dissipation.
  • the polymer resin is epoxy resin, acrylic resin, urethane resin, polyamide resin, polyethylene resin, EVA (Ethylene-Vinyl Acetate copolymer) resin, polyester resin and PVC (PolyVinyl Chloride) resin It may be any one selected.
  • the polymer resin may be an epoxy resin.
  • the epoxy resin may be included in 20 to 40wt%
  • the inorganic filler may be included in 60 to 80wt%.
  • the thermal conductivity may be low
  • the inorganic filler is included in excess of 80wt%, the adhesive force between the resin layer and the metal substrate may be lowered, and the resin layer may be easily broken.
  • the first resin layer 110 and the second resin layer 160 may include the same material, the thickness of the first resin layer 110 and the second resin layer 160 may be 20 to 200 ⁇ m, The thermal conductivity may be at least 1 W / mK, preferably at least 10 W / mK, more preferably at least 20 W / mK.
  • the first resin layer 110 and the second resin layer 160 repeat contraction and expansion according to temperature change.
  • the bonding between the first resin layer 110 and the first metal substrate 170 and the bonding between the second resin layer 160 and the second metal substrate 180 may not be affected.
  • the epoxy resin may comprise an epoxy compound and a curing agent. At this time, it may be included in 1 to 10 volume ratio of the curing agent with respect to 10 volume ratio of the epoxy compound.
  • the epoxy compound may include at least one of a crystalline epoxy compound, an amorphous epoxy compound and a silicon epoxy compound.
  • the crystalline epoxy compound may comprise a mesogen structure. Mesogen is a basic unit of liquid crystal and includes a rigid structure.
  • the amorphous epoxy compound may be a conventional amorphous epoxy compound having two or more epoxy groups in a molecule, and may be, for example, glycidyl etherate derived from bisphenol A or bisphenol F.
  • the curing agent may include at least one of an amine curing agent, a phenol curing agent, an acid anhydride curing agent, a polycapcaptan curing agent, a polyaminoamide curing agent, an isocyanate curing agent and a block isocyanate curing agent, and two or more kinds of curing agents. It can also be mixed and used.
  • the inorganic filler may include aluminum oxide or nitride, and the nitride may include 55 to 95 wt% of the inorganic filler, and more preferably, 60 to 80 wt%. When nitride is included in this numerical range, it is possible to increase the thermal conductivity and the bonding strength.
  • the nitride may include at least one of boron nitride and aluminum nitride.
  • the boron nitride may be a plate-like boron nitride, or a plate-like boron nitride agglomerate agglomerated, the surface of the boron nitride may be coated with a polymer resin.
  • any polymer resin can be used as long as it can bind with boron nitride or can coat the surface of boron nitride.
  • the polymer resin may be, for example, acrylic polymer resin, epoxy polymer resin, urethane polymer resin, polyamide polymer resin, polyethylene polymer resin, EVA (ethylene vinyl acetate copolymer) polymer resin, polyester polymer resin and PVC ( polyvinyl chloride) may be selected from the group consisting of polymer resins.
  • the polymer resin may be a polymer resin having the following unit 1.
  • Unit 1 is as follows.
  • R 1 , R 2 , R 3 and R 4 is H, the other is selected from the group consisting of C 1 -C 3 alkyl, C 2 -C 3 alkenes and C 2 -C 3 alkyne, R 5 May be a linear, branched or cyclic divalent organic linker having 1 to 12 carbon atoms.
  • one of R 1 , R 2 , R 3, and R 4 except H is selected from C 2 to C 3 alkenes, and the other and other ones are selected from C 1 to C 3 alkyl.
  • the polymer resin according to the embodiment of the present invention may include the following unit 2.
  • R 1 , R 2 , R 3, and R 4 except H may be selected to be different from each other in a group consisting of C 1 -C 3 alkyl, C 2 -C 3 alkenes, and C 2 -C 3 alkyne. have.
  • the particle size D50 of boron nitride may be larger than the particle size D50 of aluminum oxide.
  • the particle size D50 of boron nitride may be 40 to 200 ⁇ m, and the particle size D50 of aluminum oxide may be 10 to 30 ⁇ m.
  • boron nitride and aluminum oxide may be evenly dispersed in the epoxy resin composition, thereby having a uniform thermal conduction effect and adhesion performance throughout the resin layer. Can be.
  • the first resin layer 110 when the first resin layer 110 is disposed between the first metal substrate 170 and the plurality of first electrodes 120, the first metal substrate 170 and the plurality of first electrodes do not need a separate ceramic substrate. Heat transfer between the 120 is possible, and due to the adhesive performance of the first resin layer 110 itself, no separate adhesive or physical fastening means is required. In particular, since the first resin layer 110 may be implemented with a significantly thinner thickness than the conventional ceramic substrate, the heat transfer performance between the plurality of first electrodes 120 and the first metal substrate 170 may be improved. The overall size of the device 100 may be reduced.
  • the first metal substrate 170 may directly contact the first resin layer 110.
  • surface roughness is formed on a surface on which the first resin layer 110 is disposed, that is, a surface facing the first resin layer 110 of the first metal substrate 170. Can be. According to this, it is possible to prevent the problem that the first resin layer 110 is lifted up during thermocompression bonding between the first metal substrate 170 and the first resin layer 110.
  • the surface roughness means irregularities, and may be mixed with surface roughness.
  • the surface on which the first resin layer 110 is disposed among both surfaces of the first metal substrate 170 that is, the surface facing the first resin layer 110 of the first metal substrate 170.
  • the second region 174 may be disposed inside the first region 172. That is, the first region 172 may be disposed within a predetermined distance from the edge of the first metal substrate 170 toward the center region, and the first region 172 may surround the second region 174.
  • the surface roughness of the second region 174 may be greater than the surface roughness of the first region 172, and the first resin layer 110 may be disposed on the second region 174.
  • the first resin layer 110 may be disposed to be spaced apart from the boundary between the first region 172 and the second region 174 by a predetermined distance. That is, the first resin layer 110 may be disposed on the second region 174, and the edge of the first resin layer 110 may be located inside the second region 174.
  • At least a portion of the groove 400 formed by the surface roughness of the second region 174 includes a part of the first resin layer 110, that is, the epoxy resin 600 included in the first resin layer 110, and A portion 604 of the inorganic filler may be impregnated, and adhesion between the first resin layer 110 and the first metal substrate 170 may be increased.
  • the surface roughness of the second region 174 may be larger than the particle size D50 of some of the inorganic fillers included in the first resin layer 110 and smaller than the particle size D50 of the other portions.
  • the particle size D50 refers to a particle size corresponding to 50% of the weight percentage in the particle size distribution curve, that is, a particle size such that the passage mass percentage is 50%, and may be mixed with the average particle diameter.
  • the first resin layer 110 includes aluminum oxide and boron nitride as an inorganic filler, aluminum oxide does not affect the adhesion performance between the first resin layer 110 and the first metal substrate 170.
  • boron nitride has a smooth surface, it may adversely affect the adhesion performance between the first resin layer 110 and the first metal substrate 170. Accordingly, when the surface roughness of the second region 174 is greater than the particle size D50 of aluminum oxide included in the first resin layer 110, but smaller than the particle size D50 of boron nitride, the second region 174 may be formed. Since only aluminum oxide is disposed in the groove formed by the surface roughness, and boron nitride is hardly disposed, the first resin layer 110 and the first metal substrate 170 can maintain high bonding strength.
  • the surface roughness of the second region 174 is 1.05 to 1.3 of the particle size D50 of the inorganic filler 604 having a relatively small size among the inorganic fillers included in the first resin layer 110, for example, aluminum oxide.
  • the inorganic filler 602 of the inorganic filler included in the first resin layer 110 is relatively large in size, for example, may be smaller than the particle size D50 of boron nitride.
  • the surface roughness of the second region 174 may be less than 40 ⁇ m, preferably 10.5 to 39 ⁇ m. Accordingly, boron nitride disposed in the groove formed by the surface roughness of the second region 174 may be minimized.
  • Such surface roughness may be measured using a surface roughness meter.
  • the surface roughness measuring instrument measures the cross-sectional curve by using a probe, and can calculate the surface roughness using the peak line, the valley line, the average line and the reference length of the cross-sectional curve.
  • the surface roughness may mean arithmetic mean roughness Ra by the center line average calculation method. Arithmetic mean roughness Ra may be obtained through Equation 2 below.
  • a surface on which the first resin layer 110 is disposed among both surfaces of the first metal substrate 170 that is, the first of the first metal substrate 170.
  • the surface facing the resin layer 110 may include a second region 174 surrounded by the first region 172 and the first region 172, and having a larger surface roughness than the first region 172. It may further include a third region 176.
  • the third region 176 may be disposed inside the second region 174. That is, the third region 176 may be disposed to be surrounded by the second region 174.
  • the surface roughness of the second region 174 may be larger than the surface roughness of the third region 176.
  • the first resin layer 110 is disposed to be spaced apart from the boundary between the first region 172 and the second region 174 by a predetermined distance, and the first resin layer 110 is a part of the second region 174 and It may be arranged to cover the third region 176.
  • the height H1 of the side surfaces 121 of the plurality of first electrodes 120 embedded in the first resin layer 110 is 0.1 to 1 times the thickness H of the plurality of first electrodes 120, Preferably 0.2 to 0.9 times, more preferably 0.3 to 0.8 times.
  • the contact area between the plurality of first electrodes 120 and the first resin layer 110 is provided.
  • the heat transfer performance and the bonding strength between the plurality of first electrodes 120 and the first resin layer 110 may be further increased.
  • the height H1 of the side surfaces 121 of the plurality of first electrodes 120 embedded in the first resin layer 110 is less than 0.1 times the thickness H of the plurality of first electrodes 120, the plurality of It may be difficult to sufficiently obtain the heat transfer performance and the bonding strength between the first electrode 120 and the first resin layer 110, the side surface 121 of the plurality of first electrodes 120 embedded in the first resin layer 110.
  • the height H1 exceeds 1 times the thickness H of the plurality of first electrodes 120, the first resin layer 110 may rise on the plurality of first electrodes 120. There is a possibility of an electrical short.
  • the thickness of the first resin layer 110 between two neighboring first electrodes 120 may decrease from the side of each electrode toward the center region.
  • the center area may mean a predetermined area including a center point between two first electrodes 120. That is, the thickness of the first resin layer 110 may decrease gradually as the distance from one side of the first electrode 120 decreases, and increases as the thickness of the first resin layer 110 approaches the side of the neighboring first electrode 120. In this case, the thickness of the first resin layer 110 may be gradually reduced between two neighboring first electrodes 120, and may increase. Accordingly, the upper surface of the first resin layer 110 may have a 'V' shape having a smooth vertex between two neighboring first electrodes 120.
  • the first resin layer 110 between two neighboring first electrodes 120 may have a thickness variation.
  • the height T2 of the first resin layer 110 in the region in direct contact with the side surface 121 of the first electrode 120 is the highest, and the height of the first resin layer 110 in the center region is highest.
  • the height T3 may be lower than the height T2 of the first resin layer 110 in a region in direct contact with the side surface 121 of the first electrode 120. That is, the height T3 of the central region of the first resin layer 110 between the two neighboring first electrodes 120 is within the first resin layer 110 between the two neighboring first electrodes 120. Can be the lowest.
  • the height T1 of the first resin layer 110 under each first electrode 120 is the height T3 of the central region of the first resin layer 110 between two neighboring first electrodes 120. Can be lower than). That is, the height T2 of the first resin layer 110 in the region in direct contact with the side surface of the first electrode 120, the first resin layer in the central region between two neighboring first electrodes 120.
  • a height deviation may occur in the order of T2> T3> T1. have.
  • the height difference is such that the composition forming the first resin layer 110 is cured after placing and pressing the plurality of first electrodes 120 on the composition forming the first resin layer 110 in an uncured or semi-cured state.
  • the side surfaces of the plurality of first electrodes 120 may be a channel through which air in the composition forming the first resin layer 110 is discharged.
  • the composition forming the first resin layer 110 may be a plurality of compositions. It may be cured in the form of falling in the direction of gravity along the side of the first electrode 120 of.
  • the thickness T1 of the first resin layer 110 under the plurality of first electrodes 120 is 20 to 80 ⁇ m, and is formed in a region in direct contact with the side surface 121 of the first electrode 120.
  • the thickness T2 of the first resin layer 110 is 1.5 to 4 times, preferably 2 to 4 times, more preferably the thickness T1 of the first resin layer 110 disposed below each first electrode 120. Preferably 3 to 4 times.
  • the thickness T3 of the first resin layer 110 disposed in the center region between two neighboring first electrodes 120 may correspond to the first resin layer 110 disposed below each first electrode 120. It may be 1.1 to 3 times, preferably 1.1 to 2.5 times, and more preferably 1.1 to 2 times the thickness T1 of.
  • the thickness T2 of the first resin layer 110 in a region in direct contact with the side surface 121 of the first electrode 120 may be disposed in a center region between two neighboring first electrodes 120.
  • the first resin layer 110 may be 1.5 to 3.5 times, preferably 2 to 3 times, and more preferably 2.2 to 2.7 times the thickness T3 of the first resin layer 110.
  • the plurality of first electrodes 120 Distribution of the inorganic filler in the first resin layer 110 may be different from the distribution of the inorganic filler in the first resin layer 110 between the plurality of first electrodes 120.
  • the first resin layer 110 includes boron nitride having D50 of 40 to 200 ⁇ m and aluminum oxide having D50 of 10 to 30 ⁇ m
  • boron nitride and aluminum oxide may be contained in the first resin layer 110. Evenly distributed throughout, the distribution may differ in part.
  • the density of boron nitride having a D50 of 40 to 200 ⁇ m is about 2.1 g / cm 3
  • the density of aluminum oxide having a D50 of 10 to 30 ⁇ m is about 3,95 to 4.1 g / cm 3 . Accordingly, high density and small size aluminum oxides tend to sink downwards as compared to relatively low density and large size boron nitride.
  • an inorganic filler having a larger particle size than that of T1 is disposed between the plurality of first electrodes 120.
  • the distribution of the inorganic filler in the first resin layer 110 under the plurality of first electrodes 120 may be different from the distribution of the inorganic filler in the first resin layer 110 between the plurality of first electrodes 120.
  • the content ratio (eg, weight ratio) of boron nitride with respect to the entire inorganic filler in the first resin layer 110 under the plurality of first electrodes 120 may include a first ratio between the plurality of first electrodes 120. It may be smaller than the content ratio (eg, weight ratio) of boron nitride to the total inorganic filler in the resin layer 110.
  • the particle size D50 of the inorganic filler in the first resin layer 110 under the plurality of first electrodes 120 is the particle of the inorganic filler in the first resin layer 110 between the plurality of first electrodes 120. It may be smaller than size D50.
  • Aluminum oxide does not affect the adhesion performance between the first resin layer 110 and the plurality of first electrodes 120, but since the surface of the boron nitride is smooth, the first resin layer 110 and the plurality of first electrodes ( 120) may adversely affect the adhesion performance between.
  • the plurality of first electrodes 120 is embedded in the first resin layer 110 as in the embodiment of the present invention, the content of boron nitride in the first resin layer 110 disposed under the plurality of first electrodes 120. As a result, the bonding strength between the plurality of first electrodes 120 and the first resin layer 110 may be increased as compared with the case where the plurality of first electrodes 120 are not embedded in the first resin layer 110. Can be.
  • FIG. 7 is a cross-sectional view of a thermoelectric device according to still another embodiment of the present invention
  • FIG. 8 is a perspective view of the thermoelectric device according to FIG. 7
  • FIG. 9 is an exploded perspective view of the thermoelectric device according to FIG. 7. Descriptions identical to those described with reference to FIGS. 1 to 6 will not be repeated here.
  • thermoelectric device 100 includes a sealing unit 190.
  • the sealing unit 190 may be disposed on the side of the first resin layer 110 and the side of the second resin layer 160 on the first metal substrate 170. That is, the sealing unit 190 may be formed of the first metal.
  • the outermost portion of the plurality of first electrodes 120, the plurality of P-type thermoelectric legs 130, and the plurality of N-type thermoelectric legs 140 are disposed between the substrate 170 and the second metal substrate 180. It may be disposed to surround the outer side, the outermost side of the plurality of second electrodes 150 and side surfaces of the second resin layer 160.
  • the resin layer can be sealed from external moisture, heat, contamination and the like.
  • the sealing unit 190 may be disposed on the first region 172.
  • the sealing effect between the sealing unit 190 and the first metal substrate 170 may be enhanced.
  • the sealing part 190 may include a side surface of the first resin layer 110, an outermost portion of the plurality of first electrodes 120, a plurality of P-type thermoelectric legs 130, and a plurality of N-type thermoelectric legs 140.
  • the outermost part, the sealing case 192, the sealing case 192, and the first metal substrate 170 which are spaced apart from the outermost part of the plurality of second electrodes 150 and the side surfaces of the second resin layer 160 by a predetermined distance.
  • the sealing member 194 may be disposed between the first region 172, and the sealing member 196 may be disposed between the side surfaces of the sealing case 192 and the second metal substrate 180.
  • the sealing case 192 may contact the first metal substrate 170 and the second metal substrate 180 through the sealing materials 194 and 196. Accordingly, when the sealing case 192 is in direct contact with the first metal substrate 170 and the second metal substrate 180, thermal conduction occurs through the sealing case 192, and as a result, ⁇ T is lowered. You can prevent it.
  • a portion of the inner wall of the sealing case 192 is formed to be inclined, the sealing material 196 is the second metal substrate 180 and the sealing case at the side of the second metal substrate 180. Disposed between 192. As a result, the contact area between the sealing case 192 and the second metal substrate 180 may be minimized, and the volume between the first metal substrate 170 and the second metal substrate 180 may be increased. Since it becomes active, higher ⁇ T can be obtained.
  • the sealing materials 194 and 196 may include at least one of an epoxy resin and a silicone resin, or at least one of an epoxy resin and a silicone resin may include a tape coated on both surfaces.
  • the sealing materials 194 and 196 serve to seal between the sealing case 192 and the first metal substrate 170 and between the sealing case 192 and the second metal substrate 180, and the first resin layer 110.
  • sealing effects of the plurality of first electrodes 120, the plurality of P-type thermoelectric legs 130, the plurality of N-type thermoelectric legs 140, the plurality of second electrodes 150, and the second resin layer 160 It can increase, and can be mixed with a finish, a finish layer, a waterproof material, a waterproof layer and the like.
  • the sealing case 192 may be formed with a guide groove (G) for drawing out the wires 200 and 202 connected to the electrode.
  • the sealing case 192 may be an injection molded product made of plastic or the like, and may be mixed with the sealing cover.
  • the first metal substrate 170 may be a heat radiating part or a heat generating part for emitting heat
  • the second metal substrate 180 may be an endothermic part or cooling part for absorbing heat.
  • the width of the first metal substrate 170 may be greater than the width of the second metal substrate 180, or the thickness of the first metal substrate 170 may be thinner than the thickness of the second metal substrate 180.
  • the first metal substrate 170 which is a heat radiating part or a heat generating part, may be implemented to have a low thermal resistance, and the sealing part 190 may be stably disposed.
  • the first metal substrate 170 may be formed larger than the second metal substrate 180 by an area corresponding to the first region 172 in order to stably arrange the sealing unit 190. Since the second metal substrate 180, which is the heat absorbing part or the cooling part, may contact the object to be contacted with the minimum area, the heat loss may be minimized.
  • the thickness of the second metal substrate 180 may vary depending on a required heat capacity of the cooling system.
  • first metal substrate 170 as well as the embodiment of FIGS. 1 to 4 where the first metal substrate 170 includes the first region 172 and the second region 174.
  • first metal substrate 170 includes the first region 172 and the second region 174.
  • thermoelectric device 10 shows a method of manufacturing a thermoelectric device according to an embodiment of the present invention.
  • surface roughness is formed on one surface of both surfaces of the metal substrate (S1000).
  • Surface roughening may be performed by various methods such as sandblasting, sawing, casting, forging, turning, milling, boring, drilling, and electric discharge machining, but is not limited thereto.
  • the surface roughening may be performed only on a part of one side of both surfaces of the metal substrate.
  • the surface roughness is performed on the remaining area including the center of the metal substrate, that is, the second region, except for the first region, except for the first region, as in the embodiment of FIGS. 1 to 4. Can be.
  • the surface roughness may be a partial region including an edge between metals, that is, a partial region including the center of the first region and the metal substrate, that is, the third region, as in the embodiment of FIGS. It may also be performed in the second area.
  • a resin composition constituting a resin layer for example, an epoxy resin composition is applied onto the metal substrate (S1010).
  • the epoxy resin composition may be applied to a thickness of 80 to 180 ⁇ m.
  • a plurality of electrodes are disposed on the resin layer (S1020).
  • the plurality of electrodes may be arranged after being arranged in an array form.
  • the plurality of electrodes may include a Cu layer, and further include a Ni layer and Au layer sequentially plated on the Cu layer, or may further include a Ni layer and Sn layer sequentially plated on the Cu layer. have.
  • thermocompression bonding is performed under the metal substrate and on the plurality of electrodes (S1030).
  • a plurality of electrodes arranged in an array form on the film may be disposed to face the resin layer in an uncured or semi-cured state, and then thermal compression may be performed to remove the film. Accordingly, the resin layer can be cured in a state where a part of the side surfaces of the plurality of electrodes is embedded in the resin layer.
  • thermoelectric device according to an exemplary embodiment of the present invention is applied to a water purifier
  • FIG. 11 is a block diagram of a water purifier to which a thermoelectric element according to an exemplary embodiment of the present invention is applied.
  • the water purifier 1 to which the thermoelectric element is applied includes a raw water supply pipe 12a, a water purification tank inlet pipe 12b, a water purification tank 12, a filter assembly 13, a cooling fan 14, and a heat storage tank ( 15), a cold water supply pipe 15a, and a thermoelectric device 1000.
  • the raw water supply pipe 12a is a supply pipe for introducing purified water from the water source into the filter assembly 13, and the purified water tank inflow pipe 12b is an inflow for introducing purified water from the filter assembly 13 into the purified water tank 12.
  • the cold water supply pipe 15a is a supply pipe through which the cold water cooled to the predetermined temperature by the thermoelectric device 1000 in the purified water tank 12 is finally supplied to the user.
  • the purified water tank 12 temporarily receives the purified water through the filter assembly 13 to store and supply the purified water introduced through the purified water tank inlet 12b to the outside.
  • the filter assembly 13 is composed of a precipitation filter 13a, a pre carbon filter 13b, a membrane filter 13c, and a post carbon filter 13d.
  • the water flowing into the raw water supply pipe 12a may be purified through the filter assembly 13.
  • the heat storage tank 15 is disposed between the purified water tank 12 and the thermoelectric device 1000 to store cold air formed in the thermoelectric device 1000.
  • the cold air stored in the heat storage tank 15 is applied to the purified water tank 12 to cool the water contained in the purified water tank 120.
  • the heat storage tank 15 may be in surface contact with the purified water tank 12 so that the cold air may be smoothly transferred.
  • thermoelectric device 1000 includes a heat absorbing surface and a heat generating surface, and one side is cooled and the other side is heated by electron movement on the P-type semiconductor and the N-type semiconductor.
  • one side may be the purified water tank 12 side, the other side may be the opposite side of the purified water tank 12.
  • thermoelectric device 1000 may have excellent waterproof and dustproof performance, and thermal flow performance may be improved to efficiently cool the purified water tank 12 in the water purifier.
  • thermoelectric device according to an exemplary embodiment of the present invention is applied to a refrigerator
  • thermoelectric element 12 is a block diagram of a refrigerator to which a thermoelectric element according to an exemplary embodiment of the present invention is applied.
  • the refrigerator includes a deep evaporation chamber cover 23, an evaporation chamber partition wall 24, a main evaporator 25, a cooling fan 26, and a thermoelectric device 1000 in the deep evaporation chamber.
  • the inside of the refrigerator is partitioned into a deep storage compartment and a deep evaporation chamber by a deep evaporation chamber cover 23.
  • an inner space corresponding to the front of the deep evaporation chamber cover 23 may be defined as a deep storage chamber, and an inner space corresponding to the rear of the deep evaporation chamber cover 23 may be defined as a deep temperature evaporation chamber.
  • Discharge grille 23a and suction grille 23b may be respectively formed on the front surface of the deep-temperature evaporation chamber cover 23.
  • the evaporation compartment partition wall 24 is installed at a point spaced forward from the rear wall of the inner cabinet to partition the space in which the depth chamber storage system is placed and the space in which the main evaporator 25 is placed.
  • the cold air cooled by the main evaporator 25 is supplied to the freezer compartment and then returned to the main evaporator again.
  • thermoelectric device 1000 is accommodated in the deep temperature evaporation chamber, and the heat absorbing surface faces the drawer assembly side of the deep storage chamber, and the heat generating surface faces the evaporator side. Therefore, it may be used to rapidly cool the food stored in the drawer assembly to an ultra low temperature of minus 50 degrees Celsius or less by using an endothermic phenomenon generated in the thermoelectric device 1000.
  • thermoelectric device 1000 may have excellent waterproof and dustproof performance, and thermal flow performance may be improved to efficiently cool the drawer assembly in the refrigerator.
  • thermoelectric element may act on the apparatus for power generation, the apparatus for cooling, the apparatus for heating, and the like.
  • the thermoelectric device according to the embodiment of the present invention mainly includes an optical communication module, a sensor, a medical device, a measuring device, an aerospace industry, a refrigerator, a chiller, a car ventilation sheet, a cup holder, a washing machine, a dryer, and a wine cellar. It can be applied to water purifier, sensor power supply, thermopile and the like.
  • PCR equipment is a device for amplifying DNA to determine the DNA sequence, precise temperature control is required, and a thermal cycle (thermal cycle) equipment is required.
  • a Peltier-based thermoelectric device may be applied.
  • thermoelectric device Another example in which a thermoelectric device according to an exemplary embodiment of the present invention is applied to a medical device is a photo detector.
  • the photo detector includes an infrared / ultraviolet detector, a charge coupled device (CCD) sensor, an X-ray detector, a thermoelectric thermal reference source (TTRS), and the like.
  • a Peltier-based thermoelectric device may be applied to cool the photo detector. As a result, it is possible to prevent a change in wavelength, a decrease in power, a decrease in resolution, etc. due to a temperature rise inside the photodetector.
  • thermoelectric device As another example in which a thermoelectric device according to an embodiment of the present invention is applied to a medical device, an immunoassay field, an in vitro diagnostic field, a general temperature control and cooling system, Physiotherapy, liquid chiller systems, blood / plasma temperature control. Thus, precise temperature control is possible.
  • thermoelectric device according to the embodiment of the present invention is applied to a medical device.
  • a medical device is an artificial heart.
  • power can be supplied to the artificial heart.
  • thermoelectric device examples include a star tracking system, a thermal imaging camera, an infrared / ultraviolet detector, a CCD sensor, a hubble space telescope, and a TTRS. Accordingly, the temperature of the image sensor can be maintained.
  • thermoelectric device according to the embodiment of the present invention is applied to the aerospace industry includes a cooling device, a heater, a power generation device, and the like.
  • thermoelectric device according to the embodiment of the present invention may be applied for power generation, cooling, and heating in other industrial fields.

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Un élément thermoélectrique selon un mode de réalisation de la présente invention comprend : un premier substrat métallique ; une première couche de résine disposée sur le premier substrat métallique et en contact direct avec le premier substrat métallique ; une pluralité de premières électrodes disposées sur la première couche de résine ; une pluralité de pattes thermoélectriques disposées sur la pluralité de premières électrodes ; une pluralité de secondes électrodes disposées sur la pluralité de pattes thermoélectriques ; une seconde couche de résine disposée sur la pluralité de secondes électrodes ; et un second substrat métallique disposé sur la seconde couche de résine, la première couche de résine comprenant une résine polymère et une charge inorganique et au moins une partie des surfaces latérales de la pluralité de premières électrodes étant enfouies dans la première couche de résine.
PCT/KR2019/003878 2018-04-04 2019-04-02 Élément thermoélectrique WO2019194539A1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
CN202311444498.6A CN117460385A (zh) 2018-04-04 2019-04-02 热电元件
CN202311446808.8A CN117460387A (zh) 2018-04-04 2019-04-02 热电元件
JP2020553583A JP7442456B2 (ja) 2018-04-04 2019-04-02 熱電素子
CN202311444909.1A CN117460386A (zh) 2018-04-04 2019-04-02 热电元件
EP19781406.4A EP3764410B1 (fr) 2018-04-04 2019-04-02 Élément thermoélectrique
EP23200135.4A EP4277454A3 (fr) 2018-04-04 2019-04-02 Élément thermoélectrique
CN201980024692.4A CN112041996B (zh) 2018-04-04 2019-04-02 热电元件
US17/041,695 US12063860B2 (en) 2018-04-04 2019-04-02 Thermoelectric element
JP2024023757A JP2024056966A (ja) 2018-04-04 2024-02-20 熱電素子

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2018-0039307 2018-04-04
KR20180039307 2018-04-04
KR1020190036097A KR102095243B1 (ko) 2018-04-04 2019-03-28 열전소자
KR10-2019-0036097 2019-03-28

Publications (1)

Publication Number Publication Date
WO2019194539A1 true WO2019194539A1 (fr) 2019-10-10

Family

ID=68100886

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2019/003878 WO2019194539A1 (fr) 2018-04-04 2019-04-02 Élément thermoélectrique

Country Status (1)

Country Link
WO (1) WO2019194539A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030127725A1 (en) * 2001-12-13 2003-07-10 Matsushita Electric Industrial Co., Ltd. Metal wiring board, semiconductor device, and method for manufacturing the same
US20050001331A1 (en) * 2003-07-03 2005-01-06 Toshiyuki Kojima Module with a built-in semiconductor and method for producing the same
US20130081663A1 (en) * 2011-09-29 2013-04-04 Samsung Electro-Mechanics Co., Ltd. Thermoelectric module
US20160005948A1 (en) * 2013-03-29 2016-01-07 Fujifilm Corporation Thermoelectric generation module
US20160284963A1 (en) * 2013-03-21 2016-09-29 National University Corporation Nagaoka University Of Technology Thermoelectric conversion element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030127725A1 (en) * 2001-12-13 2003-07-10 Matsushita Electric Industrial Co., Ltd. Metal wiring board, semiconductor device, and method for manufacturing the same
US20050001331A1 (en) * 2003-07-03 2005-01-06 Toshiyuki Kojima Module with a built-in semiconductor and method for producing the same
US20130081663A1 (en) * 2011-09-29 2013-04-04 Samsung Electro-Mechanics Co., Ltd. Thermoelectric module
US20160284963A1 (en) * 2013-03-21 2016-09-29 National University Corporation Nagaoka University Of Technology Thermoelectric conversion element
US20160005948A1 (en) * 2013-03-29 2016-01-07 Fujifilm Corporation Thermoelectric generation module

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3764410A4 *

Similar Documents

Publication Publication Date Title
KR102095243B1 (ko) 열전소자
CN111699562B (zh) 热电装置
WO2019146991A1 (fr) Module thermoélectrique
WO2019146990A1 (fr) Élément thermoélectrique et son procédé de fabrication
WO2020159177A1 (fr) Dispositif thermoélectrique
WO2020004827A1 (fr) Élément thermoélectrique
WO2020246749A1 (fr) Dispositif thermoélectrique
WO2019194539A1 (fr) Élément thermoélectrique
KR20190139174A (ko) 열전소자
WO2020055100A1 (fr) Module thermoélectrique
WO2021029590A1 (fr) Dispositif thermoélectrique
WO2020096228A1 (fr) Module thermoélectrique
WO2019066354A1 (fr) Dispositif thermoélectrique
WO2019151765A1 (fr) Dispositif thermoélectrique
CN113330589B (zh) 热电元件
WO2020055101A1 (fr) Élément thermoélectrique
WO2017209549A1 (fr) Jambe thermoélectrique et élément thermoélectrique comportant ladite jambe
WO2020256398A1 (fr) Élément thermoélectrique
WO2018226044A1 (fr) Dispositif de conversion de chaleur
KR102055428B1 (ko) 열전소자
WO2021141284A1 (fr) Module thermoélectrique
WO2020013526A1 (fr) Dispositif de conversion de chaleur
KR102678894B1 (ko) 열전 소자
KR20190096620A (ko) 열전소자
KR20190141424A (ko) 열전소자

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19781406

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2020553583

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2019781406

Country of ref document: EP

Effective date: 20201006