WO2019194539A1

WO2019194539A1 - Thermoelectric element

Info

Publication number: WO2019194539A1
Application number: PCT/KR2019/003878
Authority: WO
Inventors: 노명래; 이종민; 조용상
Original assignee: 엘지이노텍 주식회사
Priority date: 2018-04-04
Filing date: 2019-04-02
Publication date: 2019-10-10

Abstract

A thermoelectric element according to an embodiment of the present invention comprises: a first metal substrate; a first resin layer disposed on the first metal substrate and in direct contact with the first metal substrate; a plurality of first electrodes disposed on the first resin layer; a plurality of thermoelectric legs disposed on the plurality of first electrodes; a plurality of second electrodes disposed on the plurality of thermoelectric legs; a second resin layer disposed on the plurality of second electrodes; and a second metal substrate disposed on the second resin layer, wherein the first resin layer comprises a polymeric resin and an inorganic filler and at least a part of side surfaces of the plurality of first electrodes are buried in the first resin layer.

Description

Thermoelectric element

The present invention relates to a thermoelectric element, and more particularly to a junction structure of a thermoelectric element.

Thermoelectric phenomenon is a phenomenon caused by the movement of electrons and holes in a material, and means a direct energy conversion between heat and electricity.

The thermoelectric device is a generic term for a device using a thermoelectric phenomenon, and has a structure in which a P-type thermoelectric material and an N-type thermoelectric material are bonded between metal electrodes to form a PN junction pair.

Thermoelectric elements may be classified into a device using a temperature change of the electrical resistance, a device using the Seebeck effect, a phenomenon in which electromotive force is generated by a temperature difference, a device using a Peltier effect, a phenomenon in which endothermic or heat generation by current occurs. .

Thermoelectric devices have been applied to a variety of home appliances, electronic components, communication components, and the like. For example, the thermoelectric element may be applied to a cooling device, a heating device, a power generating device, or the like. Accordingly, the demand for thermoelectric performance of thermoelectric elements is increasing.

The thermoelectric element includes a substrate, an electrode, and a thermoelectric leg, and a plurality of thermoelectric legs are arranged in an array form between the upper substrate and the lower substrate, and a plurality of upper electrodes are disposed between the plurality of thermoelectric legs and the upper substrate. A plurality of lower electrodes are disposed between the thermoelectric leg and the lower substrate.

In general, the thermoelectric element may be disposed on a metal support. When the upper substrate and the lower substrate included in the thermoelectric element are ceramic substrates, heat loss may occur due to thermal resistance at the interface between the ceramic substrate and the metal support.

The technical problem to be achieved by the present invention is to provide a junction structure of a thermoelectric element.

A thermoelectric device according to an embodiment of the present invention is disposed on a first metal substrate, the first metal substrate, a first resin layer in direct contact with the first metal substrate, and a plurality of thermoelectric elements disposed on the first resin layer. A first electrode, a plurality of thermoelectric legs disposed on the plurality of first electrodes, a plurality of second electrodes disposed on the plurality of thermoelectric legs, a second resin layer disposed on the plurality of second electrodes, And a second metal substrate disposed on the second resin layer, wherein the first resin layer includes a polymer resin and an inorganic filler, and at least a part of the side surfaces of the plurality of first electrodes is the first resin layer. Buried within.

The height of the side surface embedded in the first resin layer may be 0.1 to 1 times the thickness of the plurality of first electrodes.

The thickness of the first resin layer between two neighboring first electrodes may decrease from the side of each first electrode toward the center region between the two neighboring first electrodes.

The thickness of the first resin layer under the plurality of first electrodes may be smaller than the thickness of the first resin layer in the central region between the two neighboring first electrodes.

The distribution of the inorganic filler in the first resin layer under the plurality of first electrodes may be different from the distribution of the inorganic filler in the first resin layer between the two neighboring first electrodes.

The particle size D50 of the inorganic filler in the first resin layer under the plurality of first electrodes may be smaller than the particle size D50 of the inorganic filler in the first resin layer between two neighboring first electrodes.

The surface facing the first resin layer of the first metal substrate may include a first region and a second region disposed inside the first region, and the surface roughness of the second region may be a surface of the first region. Larger than the roughness, the first resin layer may be disposed on the second region.

The display device may further include a sealing part disposed between the first metal substrate and the second metal substrate, and the sealing part may be disposed on the first area.

The sealing part may include a sealing case disposed at a predetermined distance from a side surface of the first resin layer and a side surface of the second resin layer, and a sealing material disposed between the sealing case and the first region.

The first resin layer may include 20 to 40 wt% of the polymer resin and 60 to 80 wt% of the inorganic filler.

The polymer resin may include at least one of an epoxy resin, an acrylic resin, a urethane resin, a polyamide resin, a polyethylene resin, an EVA (Ethylene-Vinyl Acetate copolymer) resin, a polyester resin, and a polyvinyl chloride (PVC) resin. It includes, the inorganic filler may include at least one of aluminum oxide, boron nitride and aluminum nitride.

The second resin layer may include the same material as the first resin layer.

According to the embodiment of the present invention, it is possible to obtain a thermoelectric device having excellent thermal conductivity, low heat loss, and high reliability. In particular, the thermoelectric device according to the embodiment of the present invention has a high bonding strength with the metal support, and the manufacturing process is simple.

1 is a cross-sectional view of a thermoelectric device according to an exemplary embodiment of the present invention.

2 is a top view of a metal substrate included in a thermoelectric device according to an exemplary embodiment of the present invention.

3 is a cross-sectional view of a metal substrate side of a thermoelectric device according to an exemplary embodiment of the present invention.

4 is an enlarged view of a region of FIG. 3.

5 is a top view of a metal substrate included in a thermoelectric device according to another exemplary embodiment of the present invention.

6 is a cross-sectional view of the metal substrate side of the thermoelectric device including the metal substrate of FIG. 5.

7 is a cross-sectional view of a thermoelectric device according to still another embodiment of the present invention.

8 is a perspective view of the thermoelectric device of FIG. 7.

9 is an exploded perspective view of the thermoelectric device of FIG. 7.

10 shows a method of manufacturing a thermoelectric device according to an embodiment of the present invention.

11 is a block diagram of a water purifier to which a thermoelectric element according to an exemplary embodiment of the present invention is applied.

12 is a block diagram of a refrigerator to which a thermoelectric element according to an exemplary embodiment of the present invention is applied.

As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated and described in the drawings. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

Terms including ordinal numbers, such as second and first, may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the second component may be referred to as the first component, and similarly, the first component may also be referred to as the second component. The term and / or includes a combination of a plurality of related items or any item of a plurality of related items.

When a component is referred to as being "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that other components may be present in between. Should be. On the other hand, when a component is said to be "directly connected" or "directly connected" to another component, it should be understood that there is no other component in between.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings, and the same or corresponding components will be given the same reference numerals regardless of the reference numerals, and redundant description thereof will be omitted.

1 is a cross-sectional view of a thermoelectric device according to an embodiment of the present invention, Figure 2 is a top view of a metal substrate included in the thermoelectric device according to an embodiment of the present invention, Figure 3 is an embodiment of the present invention 4 is a cross-sectional view of the metal substrate side of the thermoelectric device, and FIG. 4 is an enlarged view of a region of FIG. 5 is a top view of a metal substrate included in a thermoelectric device according to another exemplary embodiment of the present invention, and FIG. 6 is a cross-sectional view of the metal substrate side of the thermoelectric device including the metal substrate of FIG. 5.

Referring to FIG. 1, the thermoelectric element 100 includes a first resin layer 110, a plurality of first electrodes 120, a plurality of P-type thermoelectric legs 130, a plurality of N-type thermoelectric legs 140, and a plurality of thermoelectric elements 100. The second electrode 150 and the second resin layer 160.

The plurality of first electrodes 120 are disposed between the first resin layer 110, the plurality of P-type thermoelectric legs 130, and the lower surfaces of the plurality of N-type thermoelectric legs 140, and the plurality of second electrodes 150. ) Is disposed between the second resin layer 160 and the top surfaces of the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140. Accordingly, the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 are electrically connected by the plurality of first electrodes 120 and the plurality of second electrodes 150. A pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 disposed between the first electrode 120 and the second electrode 150 and electrically connected to each other may form a unit cell.

A pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 may be disposed on each first electrode 120, and each of the first electrodes 120 may be disposed on each of the first electrodes 120. The pair of N-type thermoelectric legs 140 and the P-type thermoelectric legs 130 may be disposed to overlap one of the pair of P-type thermoelectric legs 130 and the N-type thermoelectric legs 140.

Here, when a voltage is applied to the first electrode 120 and the second electrode 150, the substrate flowing current from the P-type thermoelectric leg 130 to the N-type thermoelectric leg 140 due to the Peltier effect absorbs heat The substrate that acts as a cooling unit and flows current from the N-type thermoelectric leg 140 to the P-type thermoelectric leg 130 may be heated to act as a heat generating unit. Alternatively, when a temperature difference between the first electrode 120 and the second electrode 150 is applied, electric charges in the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 are moved due to the Seebeck effect, and electricity is generated. It may be.

The P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be bismuth fluoride (Bi-Te) -based thermoelectric legs including bismuth (Bi) and tellurium (Te) as main materials. P-type thermoelectric leg 130 is antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium relative to the total weight 100wt% A mixture comprising 99 to 99.999 wt% of bismustelulide (Bi-Te) -based main raw material including at least one of (Ga), tellurium (Te), bismuth (Bi) and indium (In) and Bi or Te 0.001 It may be a thermoelectric leg including to 1wt%. For example, the main raw material is Bi-Se-Te, and may further include Bi or Te as 0.001 to 1wt% of the total weight. N-type thermoelectric leg 140 is selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium relative to the total weight 100wt% A mixture comprising 99 to 99.999 wt% of bismustelulide (Bi-Te) -based main raw material including at least one of (Ga), tellurium (Te), bismuth (Bi) and indium (In) and Bi or Te 0.001 It may be a thermoelectric leg including to 1wt%. For example, the main raw material is Bi-Sb-Te, and may further include Bi or Te as 0.001 to 1wt% of the total weight.

The P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be formed in a bulk type or a stacked type. In general, the bulk P-type thermoelectric leg 130 or the bulk N-type thermoelectric leg 140 is heat-treated thermoelectric material to produce an ingot (ingot), crushed and ingot to obtain a powder for thermoelectric leg, then Sintering, and can be obtained through the process of cutting the sintered body. The stacked P-type thermoelectric leg 130 or the stacked N-type thermoelectric leg 140 is formed by applying a paste including a thermoelectric material on a sheet-shaped substrate to form a unit member, and then stacking and cutting the unit members. Can be obtained.

In this case, the pair of P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may have the same shape and volume, or may have different shapes and volumes. For example, since the electrical conduction characteristics of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 are different, the height or the cross-sectional area of the N-type thermoelectric leg 140 is the height or the cross-sectional area of the P-type thermoelectric leg 130. It can also be formed differently.

The performance of a thermoelectric device according to an embodiment of the present invention may be represented by a thermoelectric performance index. The thermoelectric performance index (ZT) can be expressed as in Equation 1.

Where α is the Seebeck coefficient [V / K], sigma is the electrical conductivity [S / m], and α ² sigma is the Power Factor [W / mK ² ]. And T is the temperature and k is the thermal conductivity [W / mK]. k can be represented by a · c _p · ρ, a is thermal diffusivity [cm ² / S], c _p is specific heat [J / gK], and ρ is density [g / cm ³ ].

In order to obtain a thermoelectric performance index of the thermoelectric device, the Z value (V / K) may be measured using a Z meter, and the Seebeck index (ZT) may be calculated using the measured Z value.

Here, the plurality of first electrodes 120 disposed between the first resin layer 110, the P-type thermoelectric leg 130, and the N-type thermoelectric leg 140, and the second resin layer 160 and the P-type thermoelectric The plurality of second electrodes 150 disposed between the leg 130 and the N-type thermoelectric leg 140 may include at least one of copper (Cu), silver (Ag), and nickel (Ni).

In addition, the sizes of the first resin layer 110 and the second resin layer 160 may be formed differently. For example, the volume, thickness, or area of one of the first resin layer 110 and the second resin layer 160 may be greater than the volume, thickness, or area of the other. Accordingly, the heat absorbing performance or heat dissipation performance of the thermoelectric element can be improved.

In this case, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a cylindrical shape, a polygonal pillar shape, an elliptical pillar shape and the like.

Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a stacked structure. For example, the P-type thermoelectric leg or the N-type thermoelectric leg may be formed by stacking a plurality of structures coated with a semiconductor material on a sheet-shaped substrate and then cutting them. As a result, it is possible to prevent loss of material and to improve electrical conduction characteristics.

Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may be manufactured according to a zone melting method or a powder sintering method. According to the zone melting method, an ingot is manufactured by using a thermoelectric material, and then, by slowly applying heat to the ingot, the particles are rearranged so as to be rearranged in a single direction, and the thermoelectric leg is slowly cooled. According to the powder sintering method, after manufacturing an ingot using a thermoelectric material, the ingot is pulverized and sieved to obtain a thermoelectric leg powder, and the thermoelectric leg is obtained through the sintering process.

According to the exemplary embodiment of the present invention, the first resin layer 110 is disposed on the first metal substrate 170 so as to directly contact the first metal substrate 170, and the second metal substrate 180 is disposed on the second metal substrate 180. The second resin layer 160 may be disposed to directly contact 180.

The first metal substrate 170 and the second metal substrate 180 may be made of aluminum, aluminum alloy, copper, copper alloy, aluminum-copper alloy, or the like. The first metal substrate 170 and the second metal substrate 180 may include the first resin layer 110, the plurality of first electrodes 120, the plurality of P-type thermoelectric legs 130, and the plurality of N-type thermoelectric legs ( 140, the plurality of second electrodes 150, the second resin layer 160, and the like, and at least one of the first metal substrate 170 and the second metal substrate 180 is an embodiment of the present invention. The thermoelectric device 100 according to the present invention may be an area directly attached to an application to which the thermoelectric device 100 is applied. Accordingly, the first metal substrate 170 and the second metal substrate 180 may be mixed with the first metal support and the second metal support, respectively.

An area of the first metal substrate 170 may be larger than an area of the first resin layer 110, and an area of the second metal substrate 180 may be larger than an area of the second resin layer 160. That is, the first resin layer 110 may be disposed in an area spaced apart from the edge of the first metal substrate 170 by a predetermined distance, and the second resin layer 160 may be disposed from the edge of the second metal substrate 180. It may be disposed in an area spaced by a predetermined distance.

In this case, the width of the first metal substrate 170 may be greater than the width of the second metal substrate 180, or the thickness of the second metal substrate 180 may be greater than the thickness of the first metal substrate 170. . Alternatively, the total area of the first metal substrate 170 may be larger than the total area of the second metal substrate 180. The first metal substrate 170 may be a heat dissipation unit for dissipating heat, and the second metal substrate 180 may be an endothermic unit for absorbing heat. To this end, an opposite surface of the surface on which the first resin layer 110 is disposed among the both surfaces of the first metal substrate 170 and a surface on which the second resin layer 160 is disposed on both surfaces of the second metal substrate 180. A plurality of protruding patterns may be disposed on at least one of the opposite surfaces. This protruding pattern may be a heat sink.

The first resin layer 110 and the second resin layer 160 may be made of a resin composition containing a polymer resin and an inorganic filler. Here, the polymer resin may be any material when the polymer resin includes a polymer material provided with a function of insulation, adhesion or heat dissipation. For example, the polymer resin is epoxy resin, acrylic resin, urethane resin, polyamide resin, polyethylene resin, EVA (Ethylene-Vinyl Acetate copolymer) resin, polyester resin and PVC (PolyVinyl Chloride) resin It may be any one selected. Preferably, the polymer resin may be an epoxy resin. Here, the epoxy resin may be included in 20 to 40wt%, the inorganic filler may be included in 60 to 80wt%. When the inorganic filler is included in less than 60wt%, the thermal conductivity may be low, and when the inorganic filler is included in excess of 80wt%, the adhesive force between the resin layer and the metal substrate may be lowered, and the resin layer may be easily broken.

The first resin layer 110 and the second resin layer 160 may include the same material, the thickness of the first resin layer 110 and the second resin layer 160 may be 20 to 200㎛, The thermal conductivity may be at least 1 W / mK, preferably at least 10 W / mK, more preferably at least 20 W / mK. When the thickness of the first resin layer 110 and the second resin layer 160 satisfies this numerical range, the first resin layer 110 and the second resin layer 160 repeat contraction and expansion according to temperature change. However, the bonding between the first resin layer 110 and the first metal substrate 170 and the bonding between the second resin layer 160 and the second metal substrate 180 may not be affected.

For this purpose, the epoxy resin may comprise an epoxy compound and a curing agent. At this time, it may be included in 1 to 10 volume ratio of the curing agent with respect to 10 volume ratio of the epoxy compound. Here, the epoxy compound may include at least one of a crystalline epoxy compound, an amorphous epoxy compound and a silicon epoxy compound. The crystalline epoxy compound may comprise a mesogen structure. Mesogen is a basic unit of liquid crystal and includes a rigid structure. The amorphous epoxy compound may be a conventional amorphous epoxy compound having two or more epoxy groups in a molecule, and may be, for example, glycidyl etherate derived from bisphenol A or bisphenol F. Here, the curing agent may include at least one of an amine curing agent, a phenol curing agent, an acid anhydride curing agent, a polycapcaptan curing agent, a polyaminoamide curing agent, an isocyanate curing agent and a block isocyanate curing agent, and two or more kinds of curing agents. It can also be mixed and used.

The inorganic filler may include aluminum oxide or nitride, and the nitride may include 55 to 95 wt% of the inorganic filler, and more preferably, 60 to 80 wt%. When nitride is included in this numerical range, it is possible to increase the thermal conductivity and the bonding strength. Here, the nitride may include at least one of boron nitride and aluminum nitride. Here, the boron nitride may be a plate-like boron nitride, or a plate-like boron nitride agglomerate agglomerated, the surface of the boron nitride may be coated with a polymer resin. Here, any polymer resin can be used as long as it can bind with boron nitride or can coat the surface of boron nitride. The polymer resin may be, for example, acrylic polymer resin, epoxy polymer resin, urethane polymer resin, polyamide polymer resin, polyethylene polymer resin, EVA (ethylene vinyl acetate copolymer) polymer resin, polyester polymer resin and PVC ( polyvinyl chloride) may be selected from the group consisting of polymer resins. The polymer resin may be a polymer resin having the following unit 1.

Unit 1 is as follows.

[Unit 1]

Wherein one of R ¹ , R ² , R ³ and R ⁴ is H, the other is selected from the group consisting of C ₁ -C ₃ alkyl, C ₂ -C ₃ alkenes and C ₂ -C ₃ alkyne, R ⁵ May be a linear, branched or cyclic divalent organic linker having 1 to 12 carbon atoms.

In one embodiment, one of R ¹ , R ² , R ^3, and R ⁴ except H is selected from C ₂ to C ₃ alkenes, and the other and other ones are selected from C ₁ to C ₃ alkyl. Can be selected. For example, the polymer resin according to the embodiment of the present invention may include the following unit 2.

[Unit 2]

Alternatively, the rest of R ¹ , R ² , R ^3, and R ⁴ except H may be selected to be different from each other in a group consisting of C ₁ -C ₃ alkyl, C ₂ -C ₃ alkenes, and C ₂ -C ₃ alkyne. have.

As such, when the polymer resin according to Unit 1 or Unit 2 is coated on boron nitride, functional groups are easily formed, and when functional groups are formed on boron nitride, affinity with the resin may be increased.

At this time, the particle size D50 of boron nitride may be larger than the particle size D50 of aluminum oxide. For example, the particle size D50 of boron nitride may be 40 to 200 μm, and the particle size D50 of aluminum oxide may be 10 to 30 μm. When the particle size D50 of boron nitride and the particle size D50 of aluminum oxide satisfy these numerical ranges, boron nitride and aluminum oxide may be evenly dispersed in the epoxy resin composition, thereby having a uniform thermal conduction effect and adhesion performance throughout the resin layer. Can be.

As such, when the first resin layer 110 is disposed between the first metal substrate 170 and the plurality of first electrodes 120, the first metal substrate 170 and the plurality of first electrodes do not need a separate ceramic substrate. Heat transfer between the 120 is possible, and due to the adhesive performance of the first resin layer 110 itself, no separate adhesive or physical fastening means is required. In particular, since the first resin layer 110 may be implemented with a significantly thinner thickness than the conventional ceramic substrate, the heat transfer performance between the plurality of first electrodes 120 and the first metal substrate 170 may be improved. The overall size of the device 100 may be reduced.

Here, the first metal substrate 170 may directly contact the first resin layer 110. To this end, surface roughness is formed on a surface on which the first resin layer 110 is disposed, that is, a surface facing the first resin layer 110 of the first metal substrate 170. Can be. According to this, it is possible to prevent the problem that the first resin layer 110 is lifted up during thermocompression bonding between the first metal substrate 170 and the first resin layer 110. In the present specification, the surface roughness means irregularities, and may be mixed with surface roughness.

2 to 4, the surface on which the first resin layer 110 is disposed among both surfaces of the first metal substrate 170, that is, the surface facing the first resin layer 110 of the first metal substrate 170. Includes a first region 172 and a second region 174, and the second region 174 may be disposed inside the first region 172. That is, the first region 172 may be disposed within a predetermined distance from the edge of the first metal substrate 170 toward the center region, and the first region 172 may surround the second region 174.

In this case, the surface roughness of the second region 174 may be greater than the surface roughness of the first region 172, and the first resin layer 110 may be disposed on the second region 174. Here, the first resin layer 110 may be disposed to be spaced apart from the boundary between the first region 172 and the second region 174 by a predetermined distance. That is, the first resin layer 110 may be disposed on the second region 174, and the edge of the first resin layer 110 may be located inside the second region 174. Accordingly, at least a portion of the groove 400 formed by the surface roughness of the second region 174 includes a part of the first resin layer 110, that is, the epoxy resin 600 included in the first resin layer 110, and A portion 604 of the inorganic filler may be impregnated, and adhesion between the first resin layer 110 and the first metal substrate 170 may be increased.

However, the surface roughness of the second region 174 may be larger than the particle size D50 of some of the inorganic fillers included in the first resin layer 110 and smaller than the particle size D50 of the other portions. Here, the particle size D50 refers to a particle size corresponding to 50% of the weight percentage in the particle size distribution curve, that is, a particle size such that the passage mass percentage is 50%, and may be mixed with the average particle diameter. For example, when the first resin layer 110 includes aluminum oxide and boron nitride as an inorganic filler, aluminum oxide does not affect the adhesion performance between the first resin layer 110 and the first metal substrate 170. Since boron nitride has a smooth surface, it may adversely affect the adhesion performance between the first resin layer 110 and the first metal substrate 170. Accordingly, when the surface roughness of the second region 174 is greater than the particle size D50 of aluminum oxide included in the first resin layer 110, but smaller than the particle size D50 of boron nitride, the second region 174 may be formed. Since only aluminum oxide is disposed in the groove formed by the surface roughness, and boron nitride is hardly disposed, the first resin layer 110 and the first metal substrate 170 can maintain high bonding strength.

Accordingly, the surface roughness of the second region 174 is 1.05 to 1.3 of the particle size D50 of the inorganic filler 604 having a relatively small size among the inorganic fillers included in the first resin layer 110, for example, aluminum oxide. Double, the inorganic filler 602 of the inorganic filler included in the first resin layer 110 is relatively large in size, for example, may be smaller than the particle size D50 of boron nitride. For example, the surface roughness of the second region 174 may be less than 40 μm, preferably 10.5 to 39 μm. Accordingly, boron nitride disposed in the groove formed by the surface roughness of the second region 174 may be minimized.

Such surface roughness may be measured using a surface roughness meter. The surface roughness measuring instrument measures the cross-sectional curve by using a probe, and can calculate the surface roughness using the peak line, the valley line, the average line and the reference length of the cross-sectional curve. In the present specification, the surface roughness may mean arithmetic mean roughness Ra by the center line average calculation method. Arithmetic mean roughness Ra may be obtained through Equation 2 below.

That is, when the cross-sectional curve obtained by the surface roughness measuring instrument is extracted by the reference length L, and the average line direction is the x-axis, and the height direction is the y-axis, it is expressed as a function (f (x)) by Equation 2 The calculated value can be expressed in 占 퐉.

According to another embodiment of the present invention, referring to FIGS. 5 to 6, a surface on which the first resin layer 110 is disposed among both surfaces of the first metal substrate 170, that is, the first of the first metal substrate 170. The surface facing the resin layer 110 may include a second region 174 surrounded by the first region 172 and the first region 172, and having a larger surface roughness than the first region 172. It may further include a third region 176.

Here, the third region 176 may be disposed inside the second region 174. That is, the third region 176 may be disposed to be surrounded by the second region 174. The surface roughness of the second region 174 may be larger than the surface roughness of the third region 176.

In this case, the first resin layer 110 is disposed to be spaced apart from the boundary between the first region 172 and the second region 174 by a predetermined distance, and the first resin layer 110 is a part of the second region 174 and It may be arranged to cover the third region 176.

Meanwhile, referring back to FIG. 1, at least a part of the side surfaces 121 of the plurality of first electrodes 120 may be embedded in the first resin layer 110. In this case, the height H1 of the side surfaces 121 of the plurality of first electrodes 120 embedded in the first resin layer 110 is 0.1 to 1 times the thickness H of the plurality of first electrodes 120, Preferably 0.2 to 0.9 times, more preferably 0.3 to 0.8 times. As described above, when at least a part of the side surfaces 121 of the plurality of first electrodes 120 are embedded in the first resin layer 110, the contact area between the plurality of first electrodes 120 and the first resin layer 110 is provided. As a result, the heat transfer performance and the bonding strength between the plurality of first electrodes 120 and the first resin layer 110 may be further increased. When the height H1 of the side surfaces 121 of the plurality of first electrodes 120 embedded in the first resin layer 110 is less than 0.1 times the thickness H of the plurality of first electrodes 120, the plurality of It may be difficult to sufficiently obtain the heat transfer performance and the bonding strength between the first electrode 120 and the first resin layer 110, the side surface 121 of the plurality of first electrodes 120 embedded in the first resin layer 110. When the height H1 exceeds 1 times the thickness H of the plurality of first electrodes 120, the first resin layer 110 may rise on the plurality of first electrodes 120. There is a possibility of an electrical short.

More specifically, the thickness of the first resin layer 110 between two neighboring first electrodes 120 may decrease from the side of each electrode toward the center region. Here, the center area may mean a predetermined area including a center point between two first electrodes 120. That is, the thickness of the first resin layer 110 may decrease gradually as the distance from one side of the first electrode 120 decreases, and increases as the thickness of the first resin layer 110 approaches the side of the neighboring first electrode 120. In this case, the thickness of the first resin layer 110 may be gradually reduced between two neighboring first electrodes 120, and may increase. Accordingly, the upper surface of the first resin layer 110 may have a 'V' shape having a smooth vertex between two neighboring first electrodes 120. Therefore, the first resin layer 110 between two neighboring first electrodes 120 may have a thickness variation. For example, the height T2 of the first resin layer 110 in the region in direct contact with the side surface 121 of the first electrode 120 is the highest, and the height of the first resin layer 110 in the center region is highest. The height T3 may be lower than the height T2 of the first resin layer 110 in a region in direct contact with the side surface 121 of the first electrode 120. That is, the height T3 of the central region of the first resin layer 110 between the two neighboring first electrodes 120 is within the first resin layer 110 between the two neighboring first electrodes 120. Can be the lowest.

However, the height T1 of the first resin layer 110 under each first electrode 120 is the height T3 of the central region of the first resin layer 110 between two neighboring first electrodes 120. Can be lower than). That is, the height T2 of the first resin layer 110 in the region in direct contact with the side surface of the first electrode 120, the first resin layer in the central region between two neighboring first electrodes 120. When comparing the height T3 of 110 and the height T1 of the first resin layer 110 disposed below each first electrode 120, a height deviation may occur in the order of T2> T3> T1. have.

The height difference is such that the composition forming the first resin layer 110 is cured after placing and pressing the plurality of first electrodes 120 on the composition forming the first resin layer 110 in an uncured or semi-cured state. In the process it can be formed by the air inside the composition is discharged by the thermal energy. That is, the side surfaces of the plurality of first electrodes 120 may be a channel through which air in the composition forming the first resin layer 110 is discharged. Accordingly, the composition forming the first resin layer 110 may be a plurality of compositions. It may be cured in the form of falling in the direction of gravity along the side of the first electrode 120 of.

In this case, the thickness T1 of the first resin layer 110 under the plurality of first electrodes 120 is 20 to 80 μm, and is formed in a region in direct contact with the side surface 121 of the first electrode 120. The thickness T2 of the first resin layer 110 is 1.5 to 4 times, preferably 2 to 4 times, more preferably the thickness T1 of the first resin layer 110 disposed below each first electrode 120. Preferably 3 to 4 times. In addition, the thickness T3 of the first resin layer 110 disposed in the center region between two neighboring first electrodes 120 may correspond to the first resin layer 110 disposed below each first electrode 120. It may be 1.1 to 3 times, preferably 1.1 to 2.5 times, and more preferably 1.1 to 2 times the thickness T1 of. In addition, the thickness T2 of the first resin layer 110 in a region in direct contact with the side surface 121 of the first electrode 120 may be disposed in a center region between two neighboring first electrodes 120. The first resin layer 110 may be 1.5 to 3.5 times, preferably 2 to 3 times, and more preferably 2.2 to 2.7 times the thickness T3 of the first resin layer 110. As such, the first resin layer 110 in the region in direct contact with the thickness T1 of the first resin layer 110 under the plurality of first electrodes 120 and the side surface 121 of the first electrode 120. When the thickness T2 of the? And the thickness T3 of the first resin layer 110 disposed in the center region between two neighboring first electrodes 120 are different from each other, the plurality of first electrodes 120 Distribution of the inorganic filler in the first resin layer 110 may be different from the distribution of the inorganic filler in the first resin layer 110 between the plurality of first electrodes 120. For example, when the first resin layer 110 includes boron nitride having D50 of 40 to 200 μm and aluminum oxide having D50 of 10 to 30 μm, boron nitride and aluminum oxide may be contained in the first resin layer 110. Evenly distributed throughout, the distribution may differ in part. For example, the density of boron nitride having a D50 of 40 to 200 µm is about 2.1 g / cm ^3, and the density of aluminum oxide having a D50 of 10 to 30 µm is about 3,95 to 4.1 g / cm ³ . Accordingly, high density and small size aluminum oxides tend to sink downwards as compared to relatively low density and large size boron nitride. In particular, in the region disposed below the plurality of first electrodes 120 in the first resin layer 110, that is, in the region having a thickness of T1, an inorganic filler having a larger particle size than that of T1 is disposed between the plurality of first electrodes 120. It can be pushed out to the area | region of ie, the area | region whose thickness is T2-T3. Accordingly, the distribution of the inorganic filler in the first resin layer 110 under the plurality of first electrodes 120 may be different from the distribution of the inorganic filler in the first resin layer 110 between the plurality of first electrodes 120. Can be. For example, the content ratio (eg, weight ratio) of boron nitride with respect to the entire inorganic filler in the first resin layer 110 under the plurality of first electrodes 120 may include a first ratio between the plurality of first electrodes 120. It may be smaller than the content ratio (eg, weight ratio) of boron nitride to the total inorganic filler in the resin layer 110. Accordingly, the particle size D50 of the inorganic filler in the first resin layer 110 under the plurality of first electrodes 120 is the particle of the inorganic filler in the first resin layer 110 between the plurality of first electrodes 120. It may be smaller than size D50. Aluminum oxide does not affect the adhesion performance between the first resin layer 110 and the plurality of first electrodes 120, but since the surface of the boron nitride is smooth, the first resin layer 110 and the plurality of first electrodes ( 120) may adversely affect the adhesion performance between. When the plurality of first electrodes 120 is embedded in the first resin layer 110 as in the embodiment of the present invention, the content of boron nitride in the first resin layer 110 disposed under the plurality of first electrodes 120. As a result, the bonding strength between the plurality of first electrodes 120 and the first resin layer 110 may be increased as compared with the case where the plurality of first electrodes 120 are not embedded in the first resin layer 110. Can be.

7 is a cross-sectional view of a thermoelectric device according to still another embodiment of the present invention, FIG. 8 is a perspective view of the thermoelectric device according to FIG. 7, and FIG. 9 is an exploded perspective view of the thermoelectric device according to FIG. 7. Descriptions identical to those described with reference to FIGS. 1 to 6 will not be repeated here.

7 to 9, the thermoelectric device 100 according to the exemplary embodiment of the present invention includes a sealing unit 190.

The sealing unit 190 may be disposed on the side of the first resin layer 110 and the side of the second resin layer 160 on the first metal substrate 170. That is, the sealing unit 190 may be formed of the first metal. The outermost portion of the plurality of first electrodes 120, the plurality of P-type thermoelectric legs 130, and the plurality of N-type thermoelectric legs 140 are disposed between the substrate 170 and the second metal substrate 180. It may be disposed to surround the outer side, the outermost side of the plurality of second electrodes 150 and side surfaces of the second resin layer 160. Accordingly, the first resin layer 110, the plurality of first electrodes 120, the plurality of P-type thermoelectric legs 130, the plurality of N-type thermoelectric legs 140, the plurality of second electrodes 150 and the first 2 The resin layer can be sealed from external moisture, heat, contamination and the like.

In this case, the sealing unit 190 may be disposed on the first region 172. As such, when the sealing unit 190 is disposed on the first region 172 having a small surface roughness, the sealing effect between the sealing unit 190 and the first metal substrate 170 may be enhanced.

Here, the sealing part 190 may include a side surface of the first resin layer 110, an outermost portion of the plurality of first electrodes 120, a plurality of P-type thermoelectric legs 130, and a plurality of N-type thermoelectric legs 140. The outermost part, the sealing case 192, the sealing case 192, and the first metal substrate 170 which are spaced apart from the outermost part of the plurality of second electrodes 150 and the side surfaces of the second resin layer 160 by a predetermined distance. The sealing member 194 may be disposed between the first region 172, and the sealing member 196 may be disposed between the side surfaces of the sealing case 192 and the second metal substrate 180. As such, the sealing case 192 may contact the first metal substrate 170 and the second metal substrate 180 through the sealing

materials

194 and 196. Accordingly, when the sealing case 192 is in direct contact with the first metal substrate 170 and the second metal substrate 180, thermal conduction occurs through the sealing case 192, and as a result, ΔT is lowered. You can prevent it. In particular, according to an embodiment of the present invention, a portion of the inner wall of the sealing case 192 is formed to be inclined, the sealing material 196 is the second metal substrate 180 and the sealing case at the side of the second metal substrate 180. Disposed between 192. As a result, the contact area between the sealing case 192 and the second metal substrate 180 may be minimized, and the volume between the first metal substrate 170 and the second metal substrate 180 may be increased. Since it becomes active, higher ΔT can be obtained.

Here, the sealing

materials

194 and 196 may include at least one of an epoxy resin and a silicone resin, or at least one of an epoxy resin and a silicone resin may include a tape coated on both surfaces. The sealing

materials

194 and 196 serve to seal between the sealing case 192 and the first metal substrate 170 and between the sealing case 192 and the second metal substrate 180, and the first resin layer 110. And sealing effects of the plurality of first electrodes 120, the plurality of P-type thermoelectric legs 130, the plurality of N-type thermoelectric legs 140, the plurality of second electrodes 150, and the second resin layer 160. It can increase, and can be mixed with a finish, a finish layer, a waterproof material, a waterproof layer and the like.

On the other hand, the sealing case 192 may be formed with a guide groove (G) for drawing out the

wires

200 and 202 connected to the electrode. To this end, the sealing case 192 may be an injection molded product made of plastic or the like, and may be mixed with the sealing cover.

Here, the first metal substrate 170 may be a heat radiating part or a heat generating part for emitting heat, and the second metal substrate 180 may be an endothermic part or cooling part for absorbing heat. To this end, the width of the first metal substrate 170 may be greater than the width of the second metal substrate 180, or the thickness of the first metal substrate 170 may be thinner than the thickness of the second metal substrate 180. have. Accordingly, the first metal substrate 170, which is a heat radiating part or a heat generating part, may be implemented to have a low thermal resistance, and the sealing part 190 may be stably disposed. In particular, the first metal substrate 170 may be formed larger than the second metal substrate 180 by an area corresponding to the first region 172 in order to stably arrange the sealing unit 190. Since the second metal substrate 180, which is the heat absorbing part or the cooling part, may contact the object to be contacted with the minimum area, the heat loss may be minimized. When the thermoelectric device according to the exemplary embodiment of the present invention is applied to an application for cooling, the thickness of the second metal substrate 180 may vary depending on a required heat capacity of the cooling system.

7 to 9 include the first metal substrate 170 as well as the embodiment of FIGS. 1 to 4 where the first metal substrate 170 includes the first region 172 and the second region 174. ) May also be applied to the embodiments of FIGS. 5-6 that include first region 172, second region 174, and third region 176.

Referring to FIG. 10, surface roughness is formed on one surface of both surfaces of the metal substrate (S1000). Surface roughening may be performed by various methods such as sandblasting, sawing, casting, forging, turning, milling, boring, drilling, and electric discharge machining, but is not limited thereto. As described above, the surface roughening may be performed only on a part of one side of both surfaces of the metal substrate. For example, the surface roughness is performed on the remaining area including the center of the metal substrate, that is, the second region, except for the first region, except for the first region, as in the embodiment of FIGS. 1 to 4. Can be. Alternatively, the surface roughness may be a partial region including an edge between metals, that is, a partial region including the center of the first region and the metal substrate, that is, the third region, as in the embodiment of FIGS. It may also be performed in the second area.

Then, a resin composition constituting a resin layer, for example, an epoxy resin composition is applied onto the metal substrate (S1010). At this time, the epoxy resin composition may be applied to a thickness of 80 to 180㎛. In a state where the resin layer is uncured or semi-cured, a plurality of electrodes are disposed on the resin layer (S1020). The plurality of electrodes may be arranged after being arranged in an array form. In this case, the plurality of electrodes may include a Cu layer, and further include a Ni layer and Au layer sequentially plated on the Cu layer, or may further include a Ni layer and Sn layer sequentially plated on the Cu layer. have.

Then, thermocompression bonding is performed under the metal substrate and on the plurality of electrodes (S1030). To this end, a plurality of electrodes arranged in an array form on the film may be disposed to face the resin layer in an uncured or semi-cured state, and then thermal compression may be performed to remove the film. Accordingly, the resin layer can be cured in a state where a part of the side surfaces of the plurality of electrodes is embedded in the resin layer.

Hereinafter, an example in which a thermoelectric device according to an exemplary embodiment of the present invention is applied to a water purifier will be described with reference to FIG. 11.

The water purifier 1 to which the thermoelectric element is applied according to an embodiment of the present invention includes a raw water supply pipe 12a, a water purification tank inlet pipe 12b, a water purification tank 12, a filter assembly 13, a cooling fan 14, and a heat storage tank ( 15), a cold water supply pipe 15a, and a thermoelectric device 1000.

The raw water supply pipe 12a is a supply pipe for introducing purified water from the water source into the filter assembly 13, and the purified water tank inflow pipe 12b is an inflow for introducing purified water from the filter assembly 13 into the purified water tank 12. The cold water supply pipe 15a is a supply pipe through which the cold water cooled to the predetermined temperature by the thermoelectric device 1000 in the purified water tank 12 is finally supplied to the user.

The purified water tank 12 temporarily receives the purified water through the filter assembly 13 to store and supply the purified water introduced through the purified water tank inlet 12b to the outside.

The filter assembly 13 is composed of a precipitation filter 13a, a pre carbon filter 13b, a membrane filter 13c, and a post carbon filter 13d.

That is, the water flowing into the raw water supply pipe 12a may be purified through the filter assembly 13.

The heat storage tank 15 is disposed between the purified water tank 12 and the thermoelectric device 1000 to store cold air formed in the thermoelectric device 1000. The cold air stored in the heat storage tank 15 is applied to the purified water tank 12 to cool the water contained in the purified water tank 120.

The heat storage tank 15 may be in surface contact with the purified water tank 12 so that the cold air may be smoothly transferred.

As described above, the thermoelectric device 1000 includes a heat absorbing surface and a heat generating surface, and one side is cooled and the other side is heated by electron movement on the P-type semiconductor and the N-type semiconductor.

Here, one side may be the purified water tank 12 side, the other side may be the opposite side of the purified water tank 12.

In addition, as described above, the thermoelectric device 1000 may have excellent waterproof and dustproof performance, and thermal flow performance may be improved to efficiently cool the purified water tank 12 in the water purifier.

Hereinafter, an example in which a thermoelectric device according to an exemplary embodiment of the present invention is applied to a refrigerator will be described with reference to FIG. 12.

The refrigerator includes a deep evaporation chamber cover 23, an evaporation chamber partition wall 24, a main evaporator 25, a cooling fan 26, and a thermoelectric device 1000 in the deep evaporation chamber.

The inside of the refrigerator is partitioned into a deep storage compartment and a deep evaporation chamber by a deep evaporation chamber cover 23.

In detail, an inner space corresponding to the front of the deep evaporation chamber cover 23 may be defined as a deep storage chamber, and an inner space corresponding to the rear of the deep evaporation chamber cover 23 may be defined as a deep temperature evaporation chamber.

Discharge grille 23a and suction grille 23b may be respectively formed on the front surface of the deep-temperature evaporation chamber cover 23.

The evaporation compartment partition wall 24 is installed at a point spaced forward from the rear wall of the inner cabinet to partition the space in which the depth chamber storage system is placed and the space in which the main evaporator 25 is placed.

The cold air cooled by the main evaporator 25 is supplied to the freezer compartment and then returned to the main evaporator again.

The thermoelectric device 1000 is accommodated in the deep temperature evaporation chamber, and the heat absorbing surface faces the drawer assembly side of the deep storage chamber, and the heat generating surface faces the evaporator side. Therefore, it may be used to rapidly cool the food stored in the drawer assembly to an ultra low temperature of minus 50 degrees Celsius or less by using an endothermic phenomenon generated in the thermoelectric device 1000.

In addition, as described above, the thermoelectric device 1000 may have excellent waterproof and dustproof performance, and thermal flow performance may be improved to efficiently cool the drawer assembly in the refrigerator.

The thermoelectric element according to the embodiment of the present invention may act on the apparatus for power generation, the apparatus for cooling, the apparatus for heating, and the like. Specifically, the thermoelectric device according to the embodiment of the present invention mainly includes an optical communication module, a sensor, a medical device, a measuring device, an aerospace industry, a refrigerator, a chiller, a car ventilation sheet, a cup holder, a washing machine, a dryer, and a wine cellar. It can be applied to water purifier, sensor power supply, thermopile and the like.

Here, an example in which the thermoelectric device according to an embodiment of the present invention is applied to a medical device includes a polymer chain reaction (PCR) device. PCR equipment is a device for amplifying DNA to determine the DNA sequence, precise temperature control is required, and a thermal cycle (thermal cycle) equipment is required. To this end, a Peltier-based thermoelectric device may be applied.

Another example in which a thermoelectric device according to an exemplary embodiment of the present invention is applied to a medical device is a photo detector. Here, the photo detector includes an infrared / ultraviolet detector, a charge coupled device (CCD) sensor, an X-ray detector, a thermoelectric thermal reference source (TTRS), and the like. A Peltier-based thermoelectric device may be applied to cool the photo detector. As a result, it is possible to prevent a change in wavelength, a decrease in power, a decrease in resolution, etc. due to a temperature rise inside the photodetector.

As another example in which a thermoelectric device according to an embodiment of the present invention is applied to a medical device, an immunoassay field, an in vitro diagnostic field, a general temperature control and cooling system, Physiotherapy, liquid chiller systems, blood / plasma temperature control. Thus, precise temperature control is possible.

Another example in which the thermoelectric device according to the embodiment of the present invention is applied to a medical device is an artificial heart. Thus, power can be supplied to the artificial heart.

Examples of the thermoelectric device according to an exemplary embodiment of the present invention applied to the aerospace industry include a star tracking system, a thermal imaging camera, an infrared / ultraviolet detector, a CCD sensor, a hubble space telescope, and a TTRS. Accordingly, the temperature of the image sensor can be maintained.

Another example in which the thermoelectric device according to the embodiment of the present invention is applied to the aerospace industry includes a cooling device, a heater, a power generation device, and the like.

In addition, the thermoelectric device according to the embodiment of the present invention may be applied for power generation, cooling, and heating in other industrial fields.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

Claims

First metal substrate,

A first resin layer disposed on the first metal substrate and in direct contact with the first metal substrate;

A plurality of first electrodes disposed on the first resin layer,

A plurality of thermoelectric legs disposed on the plurality of first electrodes,

A plurality of second electrodes disposed on the plurality of thermoelectric legs,

A second resin layer disposed on the plurality of second electrodes, and

A second metal substrate disposed on the second resin layer,

The first resin layer includes a polymer resin and an inorganic filler,

At least a portion of the side surfaces of the plurality of first electrodes are embedded in the first resin layer.
The method of claim 1,

And a height of the side surface embedded in the first resin layer is 0.1 to 1 times the thickness of the plurality of first electrodes.
The method of claim 1,

The thickness of the first resin layer between two neighboring first electrodes decreases from the side of each first electrode toward the center region between the two neighboring first electrodes.
The method of claim 3,

And a thickness of the first resin layer under the plurality of first electrodes is smaller than a thickness of the first resin layer in a central region between the two neighboring first electrodes.
The method of claim 4, wherein

And the distribution of the inorganic filler in the first resin layer under the plurality of first electrodes is different from the distribution of the inorganic filler in the first resin layer between the two neighboring first electrodes.
The method of claim 5,

The particle size D50 of the inorganic filler in the first resin layer under the plurality of first electrodes is smaller than the particle size D50 of the inorganic filler in the first resin layer between two neighboring first electrodes.
The method of claim 1,

The surface facing the first resin layer of the first metal substrate includes a first region and a second region disposed inside the first region,

The surface roughness of the second region is greater than the surface roughness of the first region,

And the first resin layer is disposed on the second region.
The method of claim 7, wherein

Further comprising a sealing portion disposed between the first metal substrate and the second metal substrate,

And the sealing part is disposed on the first region.
The method of claim 8,

The sealing unit,

A sealing case disposed at a predetermined distance from a side surface of the first resin layer and a side surface of the second resin layer, and

And a sealing material disposed between the sealing case and the first region.
The method of claim 1,

The first resin layer is a thermoelectric element comprising 20 to 40wt% of the polymer resin and 60 to 80wt% of the inorganic filler.
The method of claim 10,

The polymer resin may include at least one of an epoxy resin, an acrylic resin, a urethane resin, a polyamide resin, a polyethylene resin, an EVA (Ethylene-Vinyl Acetate copolymer) resin, a polyester resin, and a polyvinyl chloride (PVC) resin. Including,

The inorganic filler is a thermoelectric element comprising at least one of aluminum oxide, boron nitride and aluminum nitride.
The method of claim 1,

The second resin layer is a thermoelectric element comprising the same material as the first resin layer.