WO2019192060A1 - Oled显示装置及其制备方法 - Google Patents

Oled显示装置及其制备方法 Download PDF

Info

Publication number
WO2019192060A1
WO2019192060A1 PCT/CN2018/087785 CN2018087785W WO2019192060A1 WO 2019192060 A1 WO2019192060 A1 WO 2019192060A1 CN 2018087785 W CN2018087785 W CN 2018087785W WO 2019192060 A1 WO2019192060 A1 WO 2019192060A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
display device
encapsulation
barrier
oled display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/087785
Other languages
English (en)
French (fr)
Inventor
宋江江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US16/071,511 priority Critical patent/US11145836B2/en
Publication of WO2019192060A1 publication Critical patent/WO2019192060A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of curved display technologies, and in particular, to an OLED display device and a method for fabricating the same.
  • the light emitted by the luminescent layer of the white OLED is white light, that is, WOLED, and then colorized by a color filter (CF), thereby avoiding the different lifetimes of the luminescent materials of the R, G, and B primary colors in the OLED.
  • CF color filter
  • the problem of color distortion, and white OLEDs are easy to make high-resolution panels, and have great potential in large-size panels.
  • two layers of substrates which are respectively a TFT substrate and a CF substrate, are required, and the structure process is complicated.
  • the two-layer substrate will greatly increase the thickness of the entire panel and cannot realize flexible display.
  • the present invention provides an OLED display device and a method of fabricating the same, which can reduce the thickness of the entire panel and enable flexible display.
  • the specific technical solution provided by the present invention is: providing an OLED display device, the OLED display device comprising a substrate, an organic light emitting layer, a first encapsulating layer, a color filter layer, and a second encapsulating layer, wherein the organic light emitting layer is disposed on On the substrate, the first encapsulation layer covers a surface of the organic light-emitting layer, the color filter layer is disposed on the first encapsulation layer, and the second encapsulation layer covers the color filter The surface of the layer.
  • the first encapsulation layer comprises a first barrier layer, and the material of the first barrier layer is an inorganic material.
  • the first encapsulation layer further includes a first buffer layer, the first buffer layer is made of an organic material, and the first barrier layer and the first buffer layer are alternately stacked, each adjacent to two A first buffer layer is interposed between the first barrier layers.
  • a projection of the organic light emitting layer on the first barrier layer is located within a projection of the first buffer layer on the first barrier layer.
  • the second encapsulation layer comprises a second barrier layer, and the material of the second barrier layer is an inorganic material.
  • the second encapsulation layer further includes a second buffer layer, the second buffer layer is made of an organic material, and the second barrier layer and the second buffer layer are alternately stacked, each adjacent to two A second buffer layer is interposed between the second barrier layers.
  • the organic light emitting layer includes a first electrode, a hole transport layer, a first light emitting layer, a second light emitting layer, a third light emitting layer, an electron transport layer, and a second electrode which are sequentially disposed apart from the substrate.
  • the color filter layer includes a plurality of photoresist units arranged in an array, each of the photoresist units including a red photoresist, a green photoresist, and a blue photoresist.
  • the invention also provides a preparation method of an OLED display device, the preparation method comprising the steps of:
  • a second encapsulation layer is deposited on the exposed regions of the color filter layer.
  • forming the color filter layer on the surface of the first encapsulation layer specifically includes:
  • the color filter layer is obtained by exposing the filter material using a mask.
  • the OLED display device of the present invention includes a substrate, an organic light-emitting layer, a first encapsulation layer, a color filter layer, and a second encapsulation layer.
  • the organic light-emitting layer is disposed on the substrate, and the first encapsulation layer covers the a surface of the organic light-emitting layer, the color filter layer is disposed on the first encapsulation layer, the second encapsulation layer covers a surface of the color filter layer, and the first encapsulation layer is used as a color filter layer
  • the substrate is packaged by the first encapsulation layer and the second encapsulation layer, thereby omitting the CF substrate, reducing the thickness of the entire display device and achieving flexibility.
  • FIG. 1 is a schematic structural view of an OLED display device of the embodiment
  • FIG. 2 is a schematic structural view of an OLED display device in a first embodiment
  • FIG. 3 is a schematic structural view of an OLED display device in a second embodiment
  • FIG. 4 is a schematic structural diagram of an OLED display device in a third embodiment
  • 5a to 5h are flow charts of a method for preparing an OLED display device of the embodiment.
  • an OLED display device provided in this embodiment includes a substrate 1 , an organic light emitting layer 2 , a first encapsulating layer 3 , a color filter layer 4 , and a second encapsulating layer 5 .
  • the organic light emitting layer 2 is disposed on the substrate 1 .
  • An encapsulation layer 3 covers the surface of the organic light-emitting layer 2
  • a color filter layer 4 is disposed on the first encapsulation layer 3
  • a second encapsulation layer 5 covers the surface of the color filter layer 4.
  • the substrate 1 is a TFT array substrate including a bottom plate 11 and a TFT array 12 formed on the surface of the substrate 11, and the organic light-emitting layer 2 is disposed on the TFT array 12.
  • the first encapsulation layer 3 and the second encapsulation layer 5 are made of a transparent material and have a certain flexibility.
  • the color filter layer 4 is interposed between the first encapsulation layer 3 and the second encapsulation layer 5.
  • the light emitted by the organic light-emitting layer 2 is white light, and the white light emitted by the color filter layer 4 passes through the color filter layer 4 to form colored light.
  • the thickness of the first encapsulation layer 3 is 500 to 1000 nm, and the thickness of the second encapsulation layer 5 is also 500 to 1000 nm.
  • the organic light-emitting layer 2 includes a first electrode 21, a hole transport layer 22, a first light-emitting layer 23, a second light-emitting layer 24, a third light-emitting layer 25, an electron transport layer 26, and a second electrode laminated in this order away from the TFT array 12. 27.
  • the first luminescent layer 23, the second luminescent layer 24, and the third luminescent layer 25 respectively emit light of three colors of red, green, and blue, and the three colors of light are mixed to form white light.
  • the organic light-emitting layer 2 has a plurality of pixel units arranged in an array, each of which includes a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
  • the color filter layer 4 includes a plurality of photoresist units 40 arranged in an array, each of the photoresist units 40 including a red photoresist R, a green photoresist G, and a blue photoresist B.
  • Each of the photoresist units 40 corresponds to one pixel unit, and the red photoresist R, the green photoresist G, the blue photoresist B in the photoresist unit 40, and the red sub-pixel, the green sub-pixel, and the blue sub-pixel in the pixel unit.
  • the pixels correspond one by one.
  • the first encapsulation layer 3 includes a first barrier layer 31, that is, the first encapsulation layer 3 is composed of only one layer of the first barrier layer 31, and the first barrier layer 31
  • the material is an inorganic material such as SiNx, but the material of the first barrier layer 31 is not limited thereto. Since the inorganic material can block water oxygen well, water vapor and oxygen can be prevented from entering the organic light-emitting layer 2.
  • the second encapsulation layer 5 includes a second barrier layer 51, that is, the second encapsulation layer 5 is composed of only one second barrier layer 51.
  • the material of the second barrier layer 51 is an inorganic material, for example, SiNx, but the second barrier layer 51 The material is not limited to this. Since the material of the color filter layer 4 is usually also an organic material, the inorganic material can well block water oxygen, thereby preventing water vapor and oxygen from entering the color filter layer 4.
  • the first encapsulation layer 3 includes a first barrier layer 31, that is, the first encapsulation layer 3 is composed of only one layer of the first barrier layer 31, and the first barrier layer 31
  • the material is an inorganic material such as SiNx, but the material of the first barrier layer 31 is not limited thereto.
  • the second encapsulation layer 5 includes a second barrier layer 51 and a second buffer layer 52.
  • the second barrier layer 51 and the second buffer layer 52 are alternately stacked, and a layer is placed between each adjacent two second barrier layers 51.
  • the second buffer layer 52 that is, the second encapsulation layer 5 includes at least two second barrier layers 51 and a second buffer layer 52.
  • the topmost layer and the bottommost layer of the second encapsulation layer 5 are both the second barrier layer 51.
  • the material of the second barrier layer 51 is an inorganic material such as SiNx, but the material of the second barrier layer 51 is not limited thereto.
  • the material of the second buffer layer 52 is an organic material such as SiCN or SiOC, but the material of the second buffer layer 52 is not limited thereto.
  • FIG. 3 only shows the case where the second encapsulation layer 5 includes two second barrier layers 51 and one second buffer layer 52, which are shown by way of example only and not limitation.
  • the projection of the color filter layer 4 on the second barrier layer 51 is located within the projection of the second buffer layer 52 on the second barrier layer 51.
  • the second buffer layer 52 can completely cover the color filter layer 4.
  • the second encapsulation layer 5 includes the second barrier layer 51 and the second buffer layer 52 which are alternately stacked, thereby further increasing the encapsulation effect of the OLED display device.
  • the first encapsulation layer 3 includes a first barrier layer 31 and a first buffer layer 32, and the first barrier layer 31 and the first buffer layer 32 are alternately stacked, each phase A first buffer layer 32 is interposed between the two adjacent first barrier layers 31, that is, the first encapsulation layer 3 includes at least two first barrier layers 31 and one first buffer layer 32, and the first encapsulation layer 3 is the most The top layer and the bottom layer are both the first barrier layer 31.
  • the material of the first barrier layer 31 is an inorganic material such as SiNx, but the material of the first barrier layer 31 is not limited thereto.
  • the material of the first buffer layer 32 is an organic material such as SiCN or SiOC, but the material of the first buffer layer 32 is not limited thereto.
  • FIG. 4 shows only the case where the first encapsulation layer 3 includes two first barrier layers 31 and one first buffer layer 32, which are shown by way of example only and not limitation.
  • the projection of the organic light-emitting layer 2 on the first barrier layer 31 is located within the projection of the first buffer layer 32 on the first barrier layer 31.
  • the first buffer layer 32 can completely cover the organic light-emitting layer 2.
  • the second encapsulation layer 5 includes a second barrier layer 51 and a second buffer layer 52.
  • the second barrier layer 51 and the second buffer layer 52 are alternately stacked, and a layer is placed between each adjacent two second barrier layers 51.
  • the second buffer layer 52 that is, the second encapsulation layer 5 includes at least two second barrier layers 51 and a second buffer layer 52.
  • the topmost layer and the bottommost layer of the second encapsulation layer 5 are both the second barrier layer 51.
  • the material of the second barrier layer 51 is an inorganic material such as SiNx, but the material of the second barrier layer 51 is not limited thereto.
  • the material of the second buffer layer 52 is an organic material such as SiCN or SiOC, but the material of the second buffer layer 52 is not limited thereto.
  • FIG. 4 shows only the case where the second encapsulation layer 5 includes two second barrier layers 51 and one second buffer layer 52, which are shown by way of example only and not limitation.
  • the projection of the color filter layer 4 on the second barrier layer 51 is located within the projection of the second buffer layer 52 on the second barrier layer 51.
  • the second buffer layer 52 can completely cover the color filter layer 4.
  • the first encapsulation layer 3 includes a first barrier layer 31 and a first buffer layer 32 which are alternately stacked
  • the second encapsulation layer 5 includes a second barrier layer 51 and a plurality of alternately stacked layers.
  • the second buffer layer 52 further increases the packaging effect of the OLED display device.
  • the embodiment further provides a method for fabricating the above OLED display device, the method comprising the steps of:
  • depositing a first encapsulation layer 3 on the exposed regions of the substrate 1, the organic light-emitting layer 2, and the first encapsulation layer 3 may be formed by a deposition process such as a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • the method of forming the first encapsulation layer 3 is not limited thereto;
  • the second encapsulation layer 5 may be formed by a CVD process, a printing process, or a coating process, but the method of forming the second encapsulation layer 5 is not limited thereto. .
  • step S4 specifically includes:
  • the filter material is an organic material, for example, dichromate gelatin, but the filter material is not limited thereto;
  • the organic light-emitting layer 2 is encapsulated by using the first encapsulation layer 3 as a substrate of the color filter layer 4 and passing through the first encapsulation layer 3 and the second encapsulation layer 5, thereby omitting the CF substrate and reducing the entire
  • the thickness of the display device and the flexibility are achieved.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED显示装置及其制备方法， OLED显示装置包括基板（1）、有机发光层（2）、第一封装层（3）、彩色滤光层（4）以及第二封装层（5），有机发光层设置于基板上，第一封装层覆盖于有机发光层的表面，彩色滤光层设置于第一封装层上，第二封装层覆盖于彩色滤光层的表面。该OLED显示装置将第一封装层作为彩色滤光层的基板并通过第一封装层以及第二封装层来对有机发光层进行封装，从而省略了CF基板，减小了整个显示装置的厚度以及实现柔性化。

Description

OLED显示装置及其制备方法 技术领域
本发明涉及曲面显示技术领域，尤其涉及一种OLED显示装置及其制备方法。
背景技术
白光OLED的发光层发出的光是白光，即WOLED，再通过彩色滤光片(Color Filter，CF)实现彩色化，从而能够避免OLED中R、G、B三基色的发光材料的寿命不同而导致色彩失真的问题，且白光OLED易于制作高解析度的面板，在大尺寸面板中有很大的潜力。在现有的WOLED面板中，一般需要两层基板，分别为TFT基板和CF基板，结构工艺复杂，两层基板将会大大增加整个面板的厚度且不能实现柔性显示。
发明内容
为了解决现有技术的不足，本发明提供一种OLED显示装置及其制备方法，能够降低整个面板的厚度且能够实现柔性显示。
本发明提出的具体技术方案为：提供一种OLED显示装置，所述OLED显示装置包括基板、有机发光层、第一封装层、彩色滤光层以及第二封装层，所述有机发光层设置于所述基板上，所述第一封装层覆盖于所述有机发光层的表面，所述彩色滤光层设置于所述第一封装层上，所述第二封装层覆盖于所述彩色滤光层的表面。
进一步地，所述第一封装层包括第一阻挡层，所述第一阻挡层的材质为无机材料。
进一步地，所述第一封装层还包括第一缓冲层，所述第一缓冲层的材质为有机材料，所述第一阻挡层与所述第一缓冲层交替层叠设置，每相邻两个第一阻挡层之间夹设一层第一缓冲层。
进一步地，所述有机发光层在所述第一阻挡层上的投影位于所述第一缓冲层在所述第一阻挡层上的投影内。
进一步地，所述第二封装层包括第二阻挡层，所述第二阻挡层的材质为无机材料。
进一步地，所述第二封装层还包括第二缓冲层，所述第二缓冲层的材质为有机材料，所述第二阻挡层与所述第二缓冲层交替层叠设置，每相邻两个第二阻挡层之间夹设一层第二缓冲层。
进一步地，所述有机发光层包括依次远离所述基板层叠设置的第一电极、空穴传输层、第一发光层、第二发光层、第三发光层、电子传输层以及第二电极。
进一步地，所述彩色滤光层包括呈阵列设置的多个光阻单元，每一个光阻单元包括红色光阻、绿色光阻以及蓝色光阻。
本发明还提供了一种OLED显示装置的制备方法，所述制备方法包括步骤：
提供一基板；
在所述基板上制作形成有机发光层；
在所述基板、有机发光层的暴露区域沉积形成第一封装层；
在所述第一封装层的表面制作形成彩色滤光层；
在所述彩色滤光层的暴露区域沉积形成第二封装层。
进一步地，在所述第一封装层的表面制作形成彩色滤光层具体包括：
在所述第一封装层的表面涂布滤光材料；
利用掩模板对所述滤光材料进行曝光获得所述彩色滤光层。
本发明提出的OLED显示装置包括基板、有机发光层、第一封装层、彩色滤光层以及第二封装层，所述有机发光层设置于所述基板上，所述第一封装层覆盖于所述有机发光层的表面，所述彩色滤光层设置于所述第一封装层上，所 述第二封装层覆盖于所述彩色滤光层的表面，将第一封装层作为彩色滤光层的基板并通过第一封装层以及第二封装层来对有机发光层进行封装，从而省略了CF基板，减小了整个显示装置的厚度以及实现柔性化。
附图说明
图1为本实施例的OLED显示装置的结构示意图；
图2为第一实施方式中的OLED显示装置的结构示意图；
图3为第二实施方式中的OLED显示装置的结构示意图；
图4为第三实施方式中的OLED显示装置的结构示意图；
图5a～图5h为本实施例的OLED显示装置的制备方法流程图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。在附图中，相同的标号将始终被用于表示相同的元件。
参照图1，本实施例提供的OLED显示装置包括基板1、有机发光层2、第一封装层3、彩色滤光层4以及第二封装层5，有机发光层2设置于基板1上，第一封装层3覆盖于有机发光层2的表面，彩色滤光层4设置于第一封装层3上，第二封装层5覆盖于彩色滤光层4的表面。
基板1为TFT阵列基板，其包括底板11以及形成在底板11的表面的TFT阵列12，有机发光层2设置于TFT阵列12上。第一封装层3和第二封装层5由透明的材料制成并具有一定的柔性。彩色滤光层4夹设于第一封装层3与第二封装层5之间，有机发光层2发出的光为白光，其发出的白光经过彩色滤光层4后形成彩色的光。
较佳地，第一封装层3的厚度为500～1000nm，第二封装层5的厚度也为500～1000nm。
有机发光层2包括依次远离TFT阵列12层叠设置的第一电极21、空穴传输层22、第一发光层23、第二发光层24、第三发光层25、电子传输层26以及第二电极27。第一发光层23、第二发光层24和第三发光层25分别发出红、绿、蓝这三种颜色的光，这三种颜色的光混合后形成白光。有机发光层2具有呈阵列设置的多个像素单元，每一个像素单元包括红色子像素、绿色子像素以及蓝色子像素。
彩色滤光层4包括呈阵列设置的多个光阻单元40，每一个光阻单元40包括红色光阻R、绿色光阻G以及蓝色光阻B。其中，每一个光阻单元40与一个像素单元对应，光阻单元40中的红色光阻R、绿色光阻G、蓝色光阻B与像素单元中的红色子像素、绿色子像素、蓝色子像素一一对应。
参照图2，在本实施例的第一实施方式中，第一封装层3包括第一阻挡层31，即第一封装层3只由一层第一阻挡层31构成，第一阻挡层31的材质为无机材料，例如，SiNx，但是第一阻挡层31的材料不限于此。由于无机材料能够很好的阻隔水氧，从而可以防止水水汽和氧气进入有机发光层2中。第二封装层5包括第二阻挡层51，即第二封装层5只由一层第二阻挡层51构成，第二阻挡层51的材质为无机材料，例如，SiNx，但是第二阻挡层51的材料不限于此。由于彩色滤光层4的材质通常也为有机材料，无机材料能够很好的阻隔水氧，从而能够防止水水汽和氧气进入彩色滤光层4中。
参照图3，在本实施例的第二实施方式中，第一封装层3包括第一阻挡层31，即第一封装层3只由一层第一阻挡层31构成，第一阻挡层31的材质为无机材料，例如，SiNx，但是第一阻挡层31的材料不限于此。
第二封装层5包括第二阻挡层51和第二缓冲层52，第二阻挡层51与第二缓冲层52交替层叠设置，每相邻两个第二阻挡层51之间夹设一层第二缓冲层52，即第二封装层5至少包括两个第二阻挡层51、一个第二缓冲层52，第二封装层5的最顶层和最底层均为第二阻挡层51。第二阻挡层51的材质为无机材料，例如，SiNx，但是第二阻挡层51的材料不限于此。第二缓冲层52的材质为有机材料，例如，SiCN或SiOC，但是第二缓冲层52的材料不限于此。图3仅仅示出了第二封装层5包括两个第二阻挡层51、一个第二缓冲层52的情况，这里仅仅是作为示例示出，并不做限定。
较佳地，彩色滤光层4在第二阻挡层51上的投影位于第二缓冲层52在第二阻挡层51上的投影内。这样，第二缓冲层52可以完全覆盖彩色滤光层4。
在本实施例的第二实施方式中，第二封装层5包括交替层叠设置的第二阻挡层51和第二缓冲层52，从而进一步地增加了OLED显示装置的封装效果。
参照图4，在本实施例的第三实施方式中，第一封装层3包括第一阻挡层31和第一缓冲层32，第一阻挡层31与第一缓冲层32交替层叠设置，每相邻两个第一阻挡层31之间夹设一层第一缓冲层32，即第一封装层3至少包括两个第一阻挡层31、一个第一缓冲层32，第一封装层3的最顶层和最底层均为第一阻挡层31。第一阻挡层31的材质为无机材料，例如，SiNx，但是第一阻挡层31的材料不限于此。第一缓冲层32的材质为有机材料，例如，SiCN或SiOC，但是第一缓冲层32的材料不限于此。图4仅仅示出了第一封装层3包括两个第一阻挡层31、一个第一缓冲层32的情况，这里仅仅是作为示例示出，并不做限定。
较佳地，有机发光层2在第一阻挡层31上的投影位于第一缓冲层32在第一阻挡层31上的投影内。这样，第一缓冲层32可以完全覆盖有机发光层2。
第二封装层5包括第二阻挡层51和第二缓冲层52，第二阻挡层51与第二缓冲层52交替层叠设置，每相邻两个第二阻挡层51之间夹设一层第二缓冲层52，即第二封装层5至少包括两个第二阻挡层51、一个第二缓冲层52，第二封装层5的最顶层和最底层均为第二阻挡层51。第二阻挡层51的材质为无机材料，例如，SiNx，但是第二阻挡层51的材料不限于此。第二缓冲层52的材质为有机材料，例如，SiCN或SiOC，但是第二缓冲层52的材料不限于此。图4仅仅示出了第二封装层5包括两个第二阻挡层51、一个第二缓冲层52的情况，这里仅仅是作为示例示出，并不做限定。
较佳地，彩色滤光层4在第二阻挡层51上的投影位于第二缓冲层52在第二阻挡层51上的投影内。这样，第二缓冲层52可以完全覆盖彩色滤光层4。
在本实施例的第三实施方式中，第一封装层3包括交替层叠设置的第一阻挡层31和第一缓冲层32，第二封装层5包括交替层叠设置的第二阻挡层51和第二缓冲层52，从而更进一步地增加了OLED显示装置的封装效果。
参照图5a～5h，本实施例还提供了上述OLED显示装置的制备方法，所述制备方法包括步骤：
S1、提供一基板1；
S2、在基板1上制作形成有机发光层2；
S3、在基板1、有机发光层2的暴露区域沉积形成第一封装层3，第一封装层3可以通过诸如化学气相沉积(CVD)方法或原子层沉积(ALD)方法的沉积工艺来形成，但是第一封装层3的形成方法不限于此；
S4、在第一封装层3的表面制作形成彩色滤光层4；
S5、在彩色滤光层4的暴露区域沉积形成第二封装层5，第二封装层5可以通过CVD工艺、打印工艺或涂布工艺来形成，但是第二封装层5的形成方法不限于此。
如图5d～5g所示，步骤S4具体包括：
S41、在第一封装层3的表面涂布滤光材料，其中，滤光材料为有机材料，例如，重铬酸明胶，但是滤光材料不限于此；
S42、利用掩模板对滤光材料进行曝光获得彩色滤光层4，其中，通过红色可见光照射第一掩模板对红色光阻R对应的位置进行曝光，通过绿色可见光照射第二掩模板对绿色光阻对应的位置进行曝光，通过蓝色可见光照射第三掩模板对绿色光阻对应的位置进行曝光，从而获得彩色滤光层4。
本实施例通过将第一封装层3作为彩色滤光层4的基板并通过第一封装层3以及第二封装层5来对有机发光层2进行封装，从而省略了CF基板，减小了整个显示装置的厚度以及实现柔性化。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (12)

  1. 一种OLED显示装置，其中，包括基板、有机发光层、第一封装层、彩色滤光层以及第二封装层，所述有机发光层设置于所述基板上，所述第一封装层覆盖于所述有机发光层的表面，所述彩色滤光层设置于所述第一封装层上，所述第二封装层覆盖于所述彩色滤光层的表面。
  2. 根据权利要求1所述的OLED显示装置，其中，所述第一封装层包括第一阻挡层，所述第一阻挡层的材质为无机材料。
  3. 根据权利要求2所述的OLED显示装置，其中，所述第一封装层还包括第一缓冲层，所述第一缓冲层的材质为有机材料，所述第一阻挡层与所述第一缓冲层交替层叠设置，每相邻两个第一阻挡层之间夹设一层第一缓冲层。
  4. 根据权利要求3所述的OLED显示装置，其中，所述有机发光层在所述第一阻挡层上的投影位于所述第一缓冲层在所述第一阻挡层上的投影内。
  5. 根据权利要求2所述的OLED显示装置，其中，所述第二封装层包括第二阻挡层，所述第二阻挡层的材质为无机材料。
  6. 根据权利要求3所述的OLED显示装置，其中，所述第二封装层包括第二阻挡层，所述第二阻挡层的材质为无机材料。
  7. 根据权利要求5所述的OLED显示装置，其中，所述第二封装层还包括第二缓冲层，所述第二缓冲层的材质为有机材料，所述第二阻挡层与所述第二缓冲层交替层叠设置，每相邻两个第二阻挡层之间夹设一层第二缓冲层。
  8. 根据权利要求6所述的OLED显示装置，其中，所述第二封装层还包括第二缓冲层，所述第二缓冲层的材质为有机材料，所述第二阻挡层与所述第二缓冲层交替层叠设置，每相邻两个第二阻挡层之间夹设一层第二缓冲层。
  9. 根据权利要求1所述的OLED显示装置，其中，所述有机发光层包括依次远离所述基板层叠设置的第一电极、空穴传输层、第一发光层、第二发光层、第三发光层、电子传输层以及第二电极。
  10. 根据权利要求1所述的OLED显示装置，其中，所述彩色滤光层包括呈阵列设置的多个光阻单元，每一个光阻单元包括红色光阻、绿色光阻以及蓝色光阻。
  11. 一种OLED显示装置的制备方法，其中，包括步骤：
    提供一基板；
    在所述基板上制作形成有机发光层；
    在所述基板、有机发光层的暴露区域沉积形成第一封装层；
    在所述第一封装层的表面制作形成彩色滤光层；
    在所述彩色滤光层的暴露区域沉积形成第二封装层。
  12. 根据权利要求11所述的制备方法，其中，在所述第一封装层的表面制作形成彩色滤光层具体包括：
    在所述第一封装层的表面涂布滤光材料；
    利用掩模板对所述滤光材料进行曝光获得所述彩色滤光层。
PCT/CN2018/087785 2018-04-04 2018-05-22 Oled显示装置及其制备方法 Ceased WO2019192060A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/071,511 US11145836B2 (en) 2018-04-04 2018-05-22 OLED display device and manufacturing method for the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810297285.8 2018-04-04
CN201810297285.8A CN108364994A (zh) 2018-04-04 2018-04-04 Oled显示装置及其制备方法

Publications (1)

Publication Number Publication Date
WO2019192060A1 true WO2019192060A1 (zh) 2019-10-10

Family

ID=63002092

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/087785 Ceased WO2019192060A1 (zh) 2018-04-04 2018-05-22 Oled显示装置及其制备方法

Country Status (3)

Country Link
US (1) US11145836B2 (zh)
CN (1) CN108364994A (zh)
WO (1) WO2019192060A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109309170B (zh) * 2018-09-26 2020-07-10 武汉华星光电半导体显示技术有限公司 一种显示面板及显示装置
CN110739410A (zh) * 2018-11-12 2020-01-31 武汉美讯半导体有限公司 封装结构、其制作方法及包含该封装结构的oled显示器件
CN109671871A (zh) * 2018-12-20 2019-04-23 武汉华星光电半导体显示技术有限公司 用于制造有机发光显示装置的封装结构的方法
CN111490180A (zh) 2020-04-23 2020-08-04 京东方科技集团股份有限公司 显示面板、显示装置以及显示面板的制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105161514A (zh) * 2015-08-10 2015-12-16 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制备方法及显示装置
CN106784372A (zh) * 2016-12-26 2017-05-31 武汉华星光电技术有限公司 一种oled薄膜封装结构及方法
CN107768401A (zh) * 2016-08-15 2018-03-06 财团法人工业技术研究院 显示装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004362920A (ja) * 2003-06-04 2004-12-24 Shoka Kagi Kofun Yugenkoshi 両面が異なる色を発する発光ユニット
US20090053559A1 (en) * 2007-08-20 2009-02-26 Spindler Jeffrey P High-performance broadband oled device
KR100994121B1 (ko) * 2009-03-11 2010-11-15 삼성모바일디스플레이주식회사 유기 발광 표시 장치
KR101842585B1 (ko) * 2010-12-30 2018-03-28 삼성디스플레이 주식회사 유기 발광 표시 장치
KR101931658B1 (ko) * 2012-02-27 2018-12-21 삼성전자주식회사 이미지 센서의 단위 픽셀 및 이를 포함하는 이미지 센서
KR20140143631A (ko) * 2013-06-07 2014-12-17 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101692351B1 (ko) * 2013-11-27 2017-01-03 엘지디스플레이 주식회사 유기발광 표시장치 및 그 제조방법
KR102308669B1 (ko) * 2014-12-05 2021-10-05 엘지디스플레이 주식회사 유기전계발광 표시장치 및 그 제조방법
CN104966727B (zh) * 2015-07-10 2018-10-02 京东方科技集团股份有限公司 封装方法、显示面板及显示装置
CN105957878A (zh) * 2016-07-08 2016-09-21 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
JP6595444B2 (ja) * 2016-08-31 2019-10-23 エルジー ディスプレイ カンパニー リミテッド 表示装置
KR102656795B1 (ko) * 2016-11-30 2024-04-11 엘지디스플레이 주식회사 유기발광 표시장치와 그의 제조방법
KR102805657B1 (ko) * 2016-12-22 2025-05-09 엘지디스플레이 주식회사 표시장치
KR102716926B1 (ko) * 2016-12-26 2024-10-11 엘지디스플레이 주식회사 터치 스크린 일체형 표시장치
TWI613492B (zh) * 2017-05-05 2018-02-01 友達光電股份有限公司 彩色濾光片基板及顯示面板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105161514A (zh) * 2015-08-10 2015-12-16 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制备方法及显示装置
CN107768401A (zh) * 2016-08-15 2018-03-06 财团法人工业技术研究院 显示装置
CN106784372A (zh) * 2016-12-26 2017-05-31 武汉华星光电技术有限公司 一种oled薄膜封装结构及方法

Also Published As

Publication number Publication date
US11145836B2 (en) 2021-10-12
CN108364994A (zh) 2018-08-03
US20210091326A1 (en) 2021-03-25

Similar Documents

Publication Publication Date Title
CN104576957B (zh) 有机电致发光显示设备及其制造方法
JP6154470B2 (ja) エレクトロルミネッセンス装置、及びその製造方法
WO2022042059A1 (zh) Oled显示面板及其制备方法、显示装置
WO2015032240A1 (zh) Oled阵列基板及其制造方法、显示装置
WO2016033931A1 (zh) 显示面板及其制备方法和显示装置
KR20160014878A (ko) 유기 발광 표시 장치
US9660000B2 (en) Organic light emitting diode (OLED) array substrate and fabricating method thereof, display device
CN106876424A (zh) 一种有机发光显示器及其制备方法
CN110649181A (zh) 显示基板、显示装置以及显示基板的制备方法
TWI676163B (zh) 具有發白光區域的顯示裝置
US11145836B2 (en) OLED display device and manufacturing method for the same
CN108172600A (zh) 用于woled显示器的彩膜基板及woled显示器
CN110429207A (zh) 显示面板、显示装置及制作方法
WO2019205425A1 (zh) Woled显示面板及其制作方法
JP2007103362A (ja) 色飽和度を高めるフルカラーの有機ｅｌ表示装置及びその製造方法
CN104966787A (zh) 发光二极管、显示基板及其制造方法和显示装置
WO2014174892A1 (ja) エレクトロルミネッセンス装置、その製造装置、及びその製造方法
JP5486920B2 (ja) 有機ｅｌ装置及びその製造方法
JPWO2011158288A1 (ja) Ｅｌ表示パネル、ｅｌ表示パネルを備えたｅｌ表示装置、有機ｅｌ表示装置、およびｅｌ表示パネルの製造方法
CN108630733A (zh) 一种显示面板
CN106488603A (zh) 显示装置和其制造方法
CN108878495B (zh) 显示面板、其制造方法及显示装置
JP2007234268A (ja) 有機ｅｌ表示装置
WO2022059152A1 (ja) 表示装置及び表示装置の製造方法
CN100521849C (zh) 双面显示装置及其制作方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18913669

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18913669

Country of ref document: EP

Kind code of ref document: A1