WO2019185846A1 - Détecteur d'irradiation par rayons x dôté d'un interposeur en silicium poreux - Google Patents

Détecteur d'irradiation par rayons x dôté d'un interposeur en silicium poreux Download PDF

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Publication number
WO2019185846A1
WO2019185846A1 PCT/EP2019/057948 EP2019057948W WO2019185846A1 WO 2019185846 A1 WO2019185846 A1 WO 2019185846A1 EP 2019057948 W EP2019057948 W EP 2019057948W WO 2019185846 A1 WO2019185846 A1 WO 2019185846A1
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WO
WIPO (PCT)
Prior art keywords
detection layer
electrically conductive
interposer
porous silicon
electronics
Prior art date
Application number
PCT/EP2019/057948
Other languages
English (en)
Inventor
Marc Anthony CHAPPO
Original Assignee
Koninklijke Philips N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips N.V. filed Critical Koninklijke Philips N.V.
Publication of WO2019185846A1 publication Critical patent/WO2019185846A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like

Definitions

  • the following generally relates to imaging and more particular to an X-ray radiation detector with a porous silicon (pSi) interposer, and is described with particular application to computed tomography (CT) imaging, and is also amenable to other
  • Computed tomography (CT) imaging systems have include single and multi- (e.g., dual) layer X-ray radiation detectors in a detector module.
  • Multi-layer X-ray radiation detectors provide the ability to implement spectral CT detectors by utilizing different energy absorbing materials sometimes stacked on top of each other.
  • the detection layer(s) is often coupled to a substrate, and detection signals are routed from the detection layer(s) to conversion circuitry through or around the substrate.
  • THV through-hole-via
  • a radiation detector of an imaging system includes a first detection layer, electronics, and a porous silicon interposer disposed between the first detection layer and the electronics.
  • the porous silicon interposer is in electrical
  • an interposer in another aspect, includes a porous silicon bulk material.
  • the porous silicon bulk material includes columns of silicon and columnar holes. The columns of silicon are interlaced with the columnar holes.
  • a first set of the columnar holes includes an an electrically conductive material.
  • a second different set of the columnar holes include an electrically insulative material.
  • a method in another aspect, includes detecting first radiation with a first detection layer, converting the detected first radiation to a first electrical signal, routing the first electrical signal to electronics through a porous silicon interposer disposed between the first detection layer and the electronics, and routing the first electrical signal from the electronics to a processing device.
  • the invention may take form in various components and arrangements of components, and in various steps and arrangements of steps.
  • the drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention.
  • FIGETRE 1 schematically illustrates an example CT imaging system with a radiation detector with a porous silicon (pSi) interposer.
  • FIGETRE 2 schematically illustrates an example of the pSi interposer of
  • FIGURE 1 A first figure.
  • FIGURE 3 schematically illustrates an example of routing an electrical signal from an upper detection layer through a lower detection layer and to the pSi interposer of FIGURE 1.
  • FIGURE 4 schematically illustrates another example of routing an electrical signal from an upper detection layer through a lower detection layer and to the pSi interposer of FIGURE 1.
  • FIGURE 5 illustrates an example method in accordance with an embodiment(s) herein
  • FIGURE 6 illustrates another example method in accordance with an embodiment(s) herein DETAILED DESCRIPTION OF EMBODIMENTS
  • the following generally relates to a porous silicon (pSi) interposer for routing signals of multiple layers of electronic circuitry.
  • the pSi interposer includes porous silicon (pSi) bulk material with an electrically conductive material in some of the pores and an electrically insulative material in other of the pores.
  • the electrically conductive material includes electrically conductive QD nanoparticles and/or the electrically insulative material includes electrically insulative QD nanoparticles.
  • the pores with the electrically conductive material provide electrically conductive pathways between multiple layers of electronic circuitry.
  • An example of suitable QD nanoparticles is described in application serial number EP 14186022.1, entitled“Encapsulated materials in porous particles,” and fded on September 23, 2014, the entirety of which is incorporated herein by reference.
  • FIGETRE 1 schematically illustrates an example imaging system 100 such as a computed tomography (CT) system configured for spectral and/or non-spectral imaging.
  • the imaging system 100 includes a stationary gantry 102 and a rotating gantry 104, which is rotatably supported by the stationary gantry 102.
  • the rotating gantry 104 rotates around an examination region 106 about a longitudinal or z-axis 108.
  • a radiation source 110 such as an x-ray tube, is supported by the rotating gantry 104, rotates therewith, and generates and emits X-ray radiation.
  • a radiation sensitive detector array 112 includes one or more rows detectors arranged parallel to each other along the z-axis 108 direction, each row including a plurality of detectors 114 extending transverse to the z-axis 108 direction.
  • the detectors 114 detect X- ray radiation traversing the examination region 106 and generate electrical signals (projection data) indicative thereof.
  • At least one of the detectors 114 includes one or more detection layers 116i, . . ., 116 N , where N is a positive integer equal to or greater than one (collectively referred to here as detection layer(s) 116), a pSi interposer 118, and electronics 120.
  • the detection layer(s) 116 includes an indirect conversion (e.g., a scintillator / photosensor pair) detector. In another instance, the detection layer(s) 116 includes a direction conversion detector. Examples of pSi based scintillator / photosensor and direction conversion detection layers are described in patent application serial number 62/202,397, filed August 7, 2015, and entitled“Quantum Dot Based Imaging Detector,” and patent application serial number 62/312,083, filed March 23, 2016, and entitled“Radiation Detector Scintillator with an Integral Through-Hole Interconnect,” the entireties of both are incorporated herein by reference.
  • the pSi interposer 118 electrically connects the detection layer(s) 116 and the electronics 120.
  • the pSi interposer 118 includes a porous silicon (pSi) membrane or other suitable materials in which some of the pores are fdled with an electrically insulative material (e.g., insulative QD’s or other insulative material such as silicon dioxide) and other pores are fdled with an electrically conductive material (e.g., QD’s), which provide electrical pathways to route electrical signals from the detection layer(s) 116 to the electronics 120.
  • the pSi interposer 118 is configured with fine pitch dense electrical pathways, which is finer than the pitch achievable with THVs and less expensive and/or does not sacrifice geometric detection efficiency like a flex
  • the pSi interposer 118 has a density of electrical pathways achievable using THVs or flex interconnects, but is less expensive and provides a more reliable interconnect.
  • the electronics 120 include an integrated circuit (IC), an application specific integrated circuit (ASIC) or the like. In one instance, the electronics 120 include circuitry configured to route the electrical signals off the radiation sensitive detector array 112. In another instance, the electronics 120 include circuitry configured to process the electrical signals and route the raw (unprocessed) electrical signals and/or the processed electrical signals off the radiation sensitive detector array 112. In the illustrated example, the unprocessed and/or processed electrical signals are routed for reconstruction.
  • IC integrated circuit
  • ASIC application specific integrated circuit
  • a subject support 122 such as a couch, supports an object or subject in the examination region 106.
  • a reconstructor 124 reconstructs the electrical signals with one or more reconstruction algorithms.
  • a computing system serves as an operator console 126 and includes a human readable output device such as a display, an input device such as a keyboard, mouse, and/or the like, one or more processors and computer readable storage medium. Software resident on the console 126 allows an operator to control an operation of the imaging system 100.
  • FIGURE 2 schematically illustrates a side view of a sub-portion of the pSi interposer 118 for a pixel.
  • the electrically conductive material includes electrically conductive QD’s and the electrically insulative material includes electrically insulative QD’s.
  • other electrically conductive material and/or other electrically insulative material are utilized.
  • the example pSi interposer 118 includes bulk pSi 202 with a plurality of columns of Si 204 interlaced with a plurality of pores (columnar holes) 206, which extend entirely through the bulk pSi 202.
  • the pores 206 except for at least one pore (e.g., a pore 206 at 208 in the illustrated example), are filled with electrically insulative (electrically non- conductive) QD’s (NC-QD’s) 210.
  • the pore 206 at 208 is filled with electrically conductive QD’s (C-QD’s) 216. In a variation, more than one pore is filled with the C-QD’s.
  • a height 218 of the bulk pSi 202, and hence, heights of the plurality of columns of Si 204, and the plurality of pores 206 is on the order of tens to hundreds of microns.
  • the plurality of columns of Si 204 have widths 220 on an order of sub-microns to microns, and the plurality of pores 206 have widths 222 on an order of sub-microns to microns.
  • the example pSi interposer 118 is fabricated with standard processes, which minimize cost, with feature sizes in the sub-micron to micron range, which can overcome density (pitch) issues, such as those associated with THV’s.
  • the example pSi interposer 118 further includes an insulating layer 224 with the NC-QD’s 208 and at least one hole 226, which is located above the pore 206 at 208 filled with the C-QD’s 216.
  • a combination of the C-QD’s 216 in the pore 206 at 208 and in the hole 226 provide an electrically conductive pathway entirely through the combination of the bulk pSi 202 and the insulating layer 224.
  • a height 228 of the insulating layer 224 is on an order of tens to hundreds of microns.
  • the example pSi interposer 118 further includes a top contact 230, which includes an electrically conductive material 232.
  • the electrically conductive material 232 is in electrical communication with the C-QD’s 216 in the hole 226.
  • the illustrated example includes a gap 234 at an end of the electrically conductive material 232.
  • the gap 234 includes an electrical insulator such as air or a filler such as an insulative material.
  • the gap 234 insulates the electrically conductive material 232 for the pixel from a neighboring electrically conductive material of another pixel. In one instance, the gap 234 is located at least in part in the interstice between the pair of neighboring pixels.
  • each pixel of the detection layer 116 is electrically connected to a different electrically conductive material 232 of the pSi interposer 118.
  • the pSi interposer 118 includes similar electrical connections for the upper detection layer(s) 116 (e.g., the detection layer 116 2 - 116N).
  • the signals from an upper detection layer 116 are routed to the pSi interposer 118 through pixel borders of an intermediate detection layer(s) 116 disposed between the upper detection layer 116 and the pSi interposer 118.
  • FIGURE 3 shows an exploded view of a dual-layer configuration of the detector 114.
  • An upper detection layer 1162 includes a pixel 302 with a trace 304 that routes electrical signals from a pixel contact 306 to an edge contact 308.
  • the edge contact 308 electrically contacts an electrically conductive pathway 310 (e.g., a via) in a boundary of a pixel 314 in a lower detection layer 1161.
  • the electrically conductive pathway 310 electrically connects the edge contact 308 to the pSi interposer 118.
  • the electrically conductive pathway 310 is disposed in an outer wall of the pixel 314. In a variation, the electrically conductive pathway 310 is disposed in an inner wall 316 in the interstices between pixels 314 and 318, or another inner wall.
  • FIGURE 4 A variation of FIGURE 3 is shown in FIGURE 4.
  • the pixel wall 312 of the pixel 314 of the lower detection layer 1161 includes a plurality of electrically insulating QD’s (shown in solid white) and at least one column 402 of electrically conducting QD’s (shown with a dotted pattern).
  • the column 402 of electrically conducting QD’s provides an electrically conductive pathway that electrically connects the edge contact 308 (FIGURE 3) to the pSi interposer 118 (FIGURE 3).
  • the column 402 of electrically conducting QD’s is disposed in an outer wall of the pixel 314.
  • the column 402 of electrically conducting QD’s is disposed in the inner wall 316 or another inner wall.
  • a pixel wall with QD’s in its border is further described in patent application serial number 62/312,083, filed March 23, 2016, and entitled“Nano-Material Imaging Detector with an Integral Pixel Border,” which is incorporated herein by reference in its entirety.
  • the configuration described in connection with FIGURE 1 includes at least one additional pSi interposer 118 disposed between at least one pair of the detection layers 116. In another variation, the configuration described in connection with FIGURE 1 includes at least one additional pSi interposer 118 below the electronics 120. In yet another variation, the configuration described in connection with FIGURE 1 includes both the at least one additional pSi interposer 118 between the at least one pair of the detection layers 116 and the at least one additional pSi interposer 118 below the electronics 120.
  • the pSi interposer 118 can be used to route signals of multiple layers of electronic circuitry, including for the radiation sensitive detector array 112 and/or other applications including multiple layers of electronic circuitry.
  • another application of the pSi interposer e.g., with QDs
  • QDs is in stacked silicon or substrate electronic modules which commonly have processors on one layer and memory and interface modules on stacked layers.
  • Memory density is achieved by stacking layers of memory module atop of each other requiring fine pitch interconnect between those layers. The physical size of those layers drives cost and performance (speed) of the stacked module.
  • a QD pSi interposer can achieve pitches of tens of microns through both thinner and thicker Si substrates than TSVs in use today and much finer than printed circuit substrates or external flex circuitry connections aside the module.
  • the module cost is reduced by introducing this standard Si process interposer and the signal paths between layers can be minimized yielding faster speeds and performance of the stacked module systems.
  • FIGURE 5 illustrates an example method in accordance with an embodiment(s) herein
  • a pixel of a detection layer of the detector layers 116 absorbs X-ray radiation and produces an electrical signal indicative thereof.
  • the detection layer routes the electrical signal to the pSi interposer
  • the pSi interposer 118 routes the electrical signal to the electronics
  • the electronics 120 routes the electrical signal (and/or a processed electrical signal) off the detector 114.
  • the electrical signal is processed to generate an image or otherwise processed.
  • FIGURE 6 illustrates an example method in accordance with another embodiment(s) herein
  • a pixel of an upper detection layer of the detector layers 116 absorbs X-ray radiation and produces an electrical signal indicative thereof.
  • the upper detector layer routes the electrical signal to an electrical pathway in a wall(s) of a pixel(s) extending through a lower detector(s) to the pSi interposer
  • the electrical pathway routes the electrical signal to the pSi interposer
  • the pSi interposer 118 routes the electrical signal to the electronics
  • the electronics 120 routes the electrical signal (and/or a processed electrical signal) off the detector 114.
  • the electrical signal is processed to generate an image or otherwise processed.
  • the word“comprising” does not exclude other elements or steps, and the indefinite article“a” or“an” does not exclude a plurality.
  • a single processor or other unit may fulfill the functions of several items recited in the claims.
  • the mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measured cannot be used to advantage.
  • a computer program may be stored/distributed on a suitable medium, such as an optical storage medium or a solid-state medium supplied together with or as part of other hardware, but may also be distributed in other forms, such as via the Internet or other wired or wireless telecommunication systems. Any reference signs in the claims should not be construed as limiting the scope.

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)

Abstract

Un détecteur d'irradiation (114) d'un système d'imagerie (100) comprend une première couche de détection (116), une électronique (120) et un interposeur en silicium poreux (118) disposé entre la première couche de détection et l'électronique. L'interposeur en silicium poreux est en communication électrique avec la première couche de détection et l'électronique, puis fournit une voie électrique entre un premier pixel de la première couche de détection et l'électronique au moyen de la communication électrique. Un système d'imagerie (100) comprend : une source d'irradiation (110) conçue pour émettre une irradiation par rayons X ; un réseau de détecteurs (112) configuré pour détecter une irradiation par rayons X et générer un signal indiquant celle-ci ; et un reconstructeur (124) conçu pour traiter le signal afin de générer une image. Le réseau de détecteurs comprend un détecteur d'irradiation comprenant au moins une couche de détection, une électronique et un interposeur en silicium poreux. L'interposeur en silicium poreux est configuré pour acheminer un signal électrique produit par la ou les couches de détection jusqu'à l'électronique en réponse à la détection d'une irradiation.
PCT/EP2019/057948 2018-03-29 2019-03-28 Détecteur d'irradiation par rayons x dôté d'un interposeur en silicium poreux WO2019185846A1 (fr)

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US201862649705P 2018-03-29 2018-03-29
US62/649,705 2018-03-29

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111739963A (zh) * 2020-06-10 2020-10-02 中国科学院上海微系统与信息技术研究所 一种硅基宽光谱光电探测器的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130203251A1 (en) * 2012-02-08 2013-08-08 Twin Creeks Technologies, Inc. Method for Three-Dimensional Packaging of Electronic Devices
US9337233B1 (en) * 2014-12-15 2016-05-10 General Electric Company Photodiode array for imaging applications
WO2016167830A1 (fr) * 2015-04-14 2016-10-20 Analogic Corporation Réseau de détecteurs pour système à rayonnement
WO2017025888A1 (fr) * 2015-08-07 2017-02-16 Koninklijke Philips N.V. Détecteur d'imagerie à base de points quantiques
WO2017163149A1 (fr) * 2016-03-23 2017-09-28 Koninklijke Philips N.V. Détecteur d'imagerie de nanomatériau avec bordure de pixel intégrée

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130203251A1 (en) * 2012-02-08 2013-08-08 Twin Creeks Technologies, Inc. Method for Three-Dimensional Packaging of Electronic Devices
US9337233B1 (en) * 2014-12-15 2016-05-10 General Electric Company Photodiode array for imaging applications
WO2016167830A1 (fr) * 2015-04-14 2016-10-20 Analogic Corporation Réseau de détecteurs pour système à rayonnement
WO2017025888A1 (fr) * 2015-08-07 2017-02-16 Koninklijke Philips N.V. Détecteur d'imagerie à base de points quantiques
WO2017163149A1 (fr) * 2016-03-23 2017-09-28 Koninklijke Philips N.V. Détecteur d'imagerie de nanomatériau avec bordure de pixel intégrée

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111739963A (zh) * 2020-06-10 2020-10-02 中国科学院上海微系统与信息技术研究所 一种硅基宽光谱光电探测器的制备方法

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