WO2019184908A1 - Optical mask plate, and method for preparing optical mask substrate based on optical mask plate - Google Patents

Optical mask plate, and method for preparing optical mask substrate based on optical mask plate Download PDF

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Publication number
WO2019184908A1
WO2019184908A1 PCT/CN2019/079670 CN2019079670W WO2019184908A1 WO 2019184908 A1 WO2019184908 A1 WO 2019184908A1 CN 2019079670 W CN2019079670 W CN 2019079670W WO 2019184908 A1 WO2019184908 A1 WO 2019184908A1
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WIPO (PCT)
Prior art keywords
optical mask
pattern
exposure
exposed
area
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Application number
PCT/CN2019/079670
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French (fr)
Chinese (zh)
Inventor
刘永
张尚明
马小叶
刘国冬
张东徽
Original Assignee
京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Publication of WO2019184908A1 publication Critical patent/WO2019184908A1/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Definitions

  • At least one embodiment of the present disclosure is directed to a method of fabricating an optical mask and an optical mask based optical mask substrate.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • the TFT-LCD is mainly composed of an array substrate (TFT glass substrate) and a color film substrate (CF glass substrate).
  • TFT glass substrate an array substrate
  • CF glass substrate a color film substrate
  • UV ultraviolet
  • the ultraviolet light will have a large influence on the effective display area AA (Active Area) of the display panel, so the optical mask substrate is required to block the AA area, and therefore, the design structure of the optical mask substrate Will affect the manufacturing process of the display panel.
  • AA Active Area
  • At least one embodiment of the present disclosure provides an optical mask comprising a light transmissive region and a light shielding region, one of the light transmissive region and the light shielding region having a designated pattern, the specified pattern including at least A unit pattern that is arranged to be spliced to form at least two target patterns.
  • the specified pattern and the target pattern are different in size.
  • the specified pattern and the shape of the target pattern are different.
  • the specified pattern includes at least two different types of the unit patterns, the target patterns being spliced from two or more unit patterns.
  • the specified pattern includes at least one of a rectangle, a cross, and a cross.
  • the rectangle is specifically a rounded rectangle; or the well pattern includes two first strip portions along the first direction and two along the first a second strip-shaped portion in two directions, each of the first strip-shaped portions intersecting two of the second strip-shaped portions, and a corner of at least one intersection is rounded, the first direction and the The second direction is perpendicular; or the cross includes a first strip portion along the first direction and a second strip portion along the second direction, the first strip portion and the second strip The shaped portions intersect, the corners at the intersection are rounded, and the first direction is perpendicular to the second direction.
  • the unit pattern is included in the rounded rectangle, the cross or the cross.
  • the unit pattern is L-shaped, and the L-shaped unit pattern includes first strips and second strips in different directions in which the endpoints intersect unit.
  • a corner at which the first strip and the second strip meet is rounded.
  • the first strip and the second strip are transparent strips or non-transparent strips.
  • At least one embodiment of the present disclosure provides a method of fabricating an optical mask substrate based on the optical mask of any of the above embodiments, comprising: determining the unit pattern for splicing out a target pattern, based on the unit The pattern is periodically exposed to the exposed substrate until the target pattern is formed on the substrate to be exposed, and the optical mask substrate is obtained.
  • a mask and the optical mask are used to determine the current on the substrate to be exposed. a period of exposure of the period; exposing the exposed area of the current period.
  • the method further includes: the light transmission The area has the specified pattern, determining whether each exposed area on the substrate to be exposed can be spliced out of the target pattern; if so, ending the periodic exposure, if not, performing the exposure of the next period; or
  • the light shielding area has the specified pattern, and it is determined whether the area other than each exposed area on the substrate to be exposed can splicing out the target pattern, and if so, the periodic exposure is ended, and if not, the exposure of the next period is performed.
  • the light transmissive region has the specified pattern, and after performing exposure per cycle or completing exposure of all cycles, development is performed;
  • the opaque area has the specified pattern, and development is performed after all periods of exposure have been completed.
  • the determining an exposure region of the current period on the substrate to be exposed includes: using the shielding member to the optical mask Performing occlusion, forming an actual light-transmissive area or an actual light-shielding area having the unit pattern on the optical mask; the optical mask and the occlusion which will form the actual light-transmissive area or the actual light-shielding area Moving the piece as a whole to the current designated position, or moving to the current specified position as a whole and rotating to the current specified angle, determining the actual light-transmissive area or the actual after moving, or moving and rotating on the substrate to be exposed
  • the area outside the shading area is directly opposite the current exposure area.
  • the determining an exposure region of the current period on the substrate to be exposed includes:
  • 1 is a schematic view showing the principle of pre-curing a sealant with an optical mask substrate
  • FIG. 2 is a schematic diagram of a correspondence relationship between an optical mask and a TFT-LCD product
  • 3A is a schematic diagram of a corresponding relationship between an optical mask and a TFT-LCD product according to some embodiments of the present disclosure
  • 3B is a schematic diagram of correspondence between another optical mask and a TFT-LCD product according to some embodiments of the present disclosure
  • FIG. 4 is a schematic structural diagram of an optical mask according to some embodiments of the present disclosure.
  • FIG. 5 is a schematic structural diagram of another optical mask provided by some embodiments of the present disclosure.
  • FIG. 6 is a schematic structural diagram of still another optical mask according to some embodiments of the present disclosure.
  • FIG. 7 is a specific example diagram of a method of fabricating an optical mask substrate according to some embodiments of the present disclosure.
  • FIG. 8 is another specific example diagram of a method for fabricating an optical mask substrate according to some embodiments of the present disclosure.
  • FIG. 9 is a specific example diagram of a method of fabricating an optical mask substrate according to some embodiments of the present disclosure.
  • Figure 10 is a flow diagram of an exposure process within a cycle of some embodiments of the present disclosure.
  • the metal pattern on the optical mask substrate (for example, UV Glass) can be used to shield the AA region, so that the ultraviolet light only irradiates the sealant without irradiating the AA region.
  • 100 may be a TFT-LCD product
  • 101 may be a frame sealant
  • 102 may be an AA area
  • 200 may be an optical mask substrate
  • 201 may be an occlusion area of an optical mask substrate.
  • the glass substrate having the metal layer is usually exposed, etched, etc. by using a mask having a certain metal pattern to obtain the same metal pattern.
  • Optical mask substrate 200 for example, UV glass substrate
  • the optical mask substrate 200 of the masking region 201 having different patterns to block the AA region 102, and it is also necessary to use a plurality of patterns respectively.
  • An optical mask (such as a UV mask) is used to prepare the corresponding optical mask substrate 200, the principle of which is shown in FIG.
  • At least one embodiment of the present disclosure provides an optical mask and a method of preparing an optical mask substrate based on the optical mask.
  • the optical mask includes a light transmissive area and a light blocking area, one of the light transmissive area and the light shielding area having a designated pattern, the designated pattern including at least one unit pattern, and the unit pattern being arranged to be spliced to form at least two target patterns.
  • an optical mask substrate having a plurality of different target patterns can be formed by multiple exposures to be applied to a plurality of TFT-LED products, which can reduce production cost and waste of resources. .
  • the designated pattern includes a plurality of partitions, and the unit pattern may be one of the partitions or a combination of the plurality of partitions.
  • the portion occupied by the unit pattern in the specified pattern can be referred to the related description in the following embodiments (the embodiments shown in FIG. 7 and FIG. 8), and details are not described herein.
  • the method of obtaining an optical mask substrate by multiple exposure of the optical mask may be a photolithography patterning process.
  • the photoresist is at least divided into a positive photoresist and a negative photoresist.
  • the specified pattern can be selected and designed in the optical mask according to the type of the photoresist. Light zone or shade zone.
  • a positive photoresist is used in a photolithographic patterning process for fabricating an optical mask substrate, and the light transmissive region of the optical mask includes a specified pattern.
  • a negative photoresist is used in the photolithographic patterning process for fabricating an optical mask substrate, and the light shielding region of the optical mask includes a specified pattern.
  • the corresponding relationship between the optical mask board and the TFT-LCD product is as shown in FIG. 3A, and the use has
  • the optical mask 400 of the pattern 1001 a plurality of different optical mask substrates can be formed by multiple exposures to be applied to various TFT-LED products (100A and 100B in FIG. 3A), which can reduce production costs. Reduce waste of resources.
  • a positive photoresist is used in the photolithography patterning process for fabricating an optical mask substrate, and the specified pattern 1001 of the optical mask 400 is located in the light transmissive region, and is specified during exposure.
  • the portion (unit pattern) for exposure in the pattern 1001 causes light to pass through, and causes the transmitted light to be directed toward the positive photoresist in the region where the target pattern 1002 is located, and after development, the unit of the positive photoresist pattern
  • the portion corresponding to the pattern is removed, and a patterning process (for example, wet etching) is performed using the remaining positive photoresist as a mask to obtain an optical mask substrate having a target pattern (or a portion thereof).
  • the corresponding relationship between the optical mask and the TFT-LCD product is as shown in FIG. 3B.
  • the optical mask 400 having the specified pattern 1001 a plurality of different optical mask substrates can be formed by multiple exposures to be applied to various TFT-LED products (100A and 100B in FIG. 3B), which can reduce production. Cost, reducing waste of resources.
  • a negative photoresist is used in the photolithography patterning process for fabricating the optical mask substrate, and the specified pattern 1001 of the optical mask 400 is located in the light-shielding region, and the pattern is specified when the exposure is performed.
  • the portion (unit pattern) for shielding light in 1001 blocks light, and after exposure and development, the portion corresponding to the cell pattern of the negative photoresist pattern is removed, and the remaining negative photoresist is used as a mask for patterning.
  • a process eg, wet etching is performed to obtain an optical mask substrate having a target pattern (or a portion thereof).
  • the size of the designated pattern and the target pattern are different.
  • the specified pattern of the optical mask 400 is smaller than the target pattern 1002 of the optical mask substrate corresponding to the TFT-LED product 100A, and larger than the target pattern of the optical mask substrate corresponding to the TFT-LED product 100B. 1003.
  • the shape of the designated pattern and the target pattern are different.
  • the aspect ratio of the designated pattern 1001 of the optical mask 400, the aspect ratio of the target pattern 1002 of the optical mask substrate corresponding to the TFT-LED product 100A, and the corresponding TFT-LED product 100B The aspect ratios of the target patterns 1003 of the optical mask substrate are not equal.
  • the technical solution in at least one embodiment of the present disclosure will be described by taking a specific pattern in the optical mask in a light transmitting region as an example.
  • the target pattern corresponds to the exposed area, and thus the target pattern may become the pattern to be exposed.
  • the planar structure of the optical mask 400 is as shown in FIG. 4, FIG. 5 or FIG.
  • the optical mask 400 includes a light-shielding region 410 and a light-transmitting region 420 having a prescribed pattern
  • the design pattern 1001 includes at least one unit pattern capable of splicing out at least two patterns to be exposed (1002 and 1003).
  • optical mask 400 By using an optical mask 400 having a specified pattern, a plurality of optical mask substrates having different patterns to be exposed can be formed by using a mask for different times of exposure.
  • the optical mask 400 has high versatility and can be effective. Reduce production costs and reduce waste of resources.
  • the optical mask substrate 200 prepared by the optical mask 400 includes a light shielding region 410 and a light transmitting region 420 having a pattern to be exposed.
  • the specified pattern of the optical mask includes at least one unit pattern, and the pattern to be exposed may be spliced by any one of the unit patterns, or may be spliced by two or more unit patterns. to make.
  • the specified pattern (or the unit pattern therein) may include a plurality of shapes in order to better adapt to the existing AA area (such as 102 in FIG. 1) and the sealant (FIG. 1).
  • the specified pattern may include at least one of a rectangle, a cross, and a cross.
  • the specified pattern of the optical mask may be rectangular.
  • the designated pattern may be a rounded rectangle, as shown in FIG. 4; the area inside the rounded rectangle is a partial occlusion area that can be used to block the AA area during pre-curing of the sealant.
  • the specified pattern of the optical mask may be in the shape of a square.
  • the well pattern includes two first strip portions 421 (belonging to the light transmitting region 420) and two along the second direction (in the X-axis direction in the drawing).
  • the second strip portion 422 (in the Y-axis direction) of the middle (in the light transmissive region 420), and the first direction is perpendicular to the second direction.
  • Each of the first strip portions 421 intersects the two second strip portions 422, and the corners at each intersection are rounded to better accommodate the design shape of the sealant in the current product.
  • the well-shaped pattern includes not only the rounded rectangular pattern in the above embodiment (the embodiment shown in FIG. 4) but also the rounded rectangle in each direction.
  • the partial pattern increases the compatibility of the pattern and has a wider application range.
  • the specified pattern of the optical mask may be a cross.
  • the cross includes a first strip portion 421 disposed in a first direction (X-axis direction in the drawing) and a second portion in a second direction (Y-axis direction in the drawing)
  • the strip portion 422 has a first direction that is perpendicular to the second direction.
  • the first strip portions 421 are each intersected with the second strip portion 422, and the corners at the intersections are rounded to better accommodate the design shape of the sealant in the current product.
  • the cross pattern distributes a partial pattern of rounded rectangles in various directions (for example, four corners and four sides of a rounded rectangle), increasing pattern compatibility. , the scope of application is wider.
  • the specified pattern of the optical mask is a rounded rectangle, based on a rounded rectangular optical mask, an appropriate unit pattern can be selected, and the substrate to be exposed based on the unit pattern Multiple exposures were made to obtain an optical mask having a well-shaped or cross-shaped light transmissive region.
  • the unit pattern is at least a portion of the rounded rectangle, a cross or a cross.
  • the unit pattern may be any portion of a specified pattern (eg, a designated pattern of rounded rectangles, crosses, or crosses), in order to better conform to the shape requirements of the sealant in current products, in some embodiments of the present disclosure, the unit patterns
  • the shape can be L-shaped (or inverted L-shaped).
  • the shape of the unit pattern is a straight segment shape.
  • the shape of the unit pattern can be designed as needed, and is not limited herein.
  • the L-shaped unit pattern includes a first strip portion intersecting the end direction in the first direction and a second strip portion along the second direction, the corner of the intersection of the first strip portion and the second strip portion being rounded . Therefore, the optical mask substrate prepared based on the L-shaped unit pattern is more in line with the need to cure the sealant in the current product.
  • the length of the first strip is not greater than the length of the side in one direction of the rounded rectangle
  • the second strip is The length is not greater than the length of the side in the second direction of the rounded rectangle.
  • the length of the first strip portion is not greater than the length of the associated first strip portion, and the length of the second strip portion is not greater than The length of the second strip portion.
  • the first strip and the second strip are transparent strips; in the case where the designated pattern in the optical mask is located in the shade (as in the embodiment shown in FIG. 3B), the first strip and the first strip The two strips are non-transparent strips, and the non-transparent strips can be shielded from light.
  • the length of the first strip portion is not greater than the length of the first strip portion
  • the length of the second strip portion is not greater than the second strip shape The length of the part.
  • the optical mask 400 may further include a mask frame 430, which is a light-shielding region. Used to form the boundary of the exposed area (601 in Fig. 7).
  • At least one optical mask having a specified pattern is provided, and any of the optical masks can be used to prepare a plurality of different optical mask substrates, which is highly versatile and can be greatly Reduce production costs and reduce waste of production resources.
  • At least one embodiment of the present disclosure provides a method of fabricating an optical mask substrate.
  • FIGS. 7 and 8 respectively show two typical examples of the preparation method.
  • the preparation method includes: determining a unit pattern capable of splicing out a pattern to be exposed, and periodically exposing the substrate 600 to be exposed based on the unit pattern until a pattern to be exposed is formed on the substrate 600 to be exposed, thereby obtaining a sealable adhesive that can be used for curing
  • the optical mask substrate 200 of 101 The substrate to be exposed 600 is a glass substrate with a metal film layer, and the pattern to be exposed is a pattern of a metal film layer to be exposed.
  • a specified pattern (unit pattern) of the optical mask is located in the light transmissive region, as shown in FIG. 7 or 8. As shown in FIG. 10, the following steps may be included:
  • different exposure modes are used to form different patterns to be exposed on the substrate to be exposed 600 by using the optical mask 400, thereby obtaining different optics.
  • Mask substrate 200 For example, in the method for fabricating an optical mask substrate provided by at least one embodiment of the present disclosure, different exposure modes are used to form different patterns to be exposed on the substrate to be exposed 600 by using the optical mask 400, thereby obtaining different optics.
  • Mask substrate 200 For example, in the method for fabricating an optical mask substrate provided by at least one embodiment of the present disclosure, different exposure modes are used to form different patterns to be exposed on the substrate to be exposed 600 by using the optical mask 400, thereby obtaining different optics.
  • Mask substrate 200 For example, in the method for fabricating an optical mask substrate provided by at least one embodiment of the present disclosure, different exposure modes are used to form different patterns to be exposed on the substrate to be exposed 600 by using the optical mask 400, thereby obtaining different optics.
  • the preparation method may further include:
  • each exposed area 601 on the substrate to be exposed 600 can be spliced out of the pattern to be exposed; if so, the periodic exposure is ended; if not, the exposure of the next period is performed.
  • the designated pattern (unit pattern) of the optical mask 400 is located in the light transmitting region.
  • an area other than each exposed area on the substrate to be exposed ie, an area that is not exposed
  • the periodic exposure is ended, and if not, the exposure of the next cycle is performed.
  • development is performed after completion of exposure per cycle or completion of exposure of all cycles, which can be seen in FIGS. 7 and 8 Example.
  • development is performed after all periods of exposure have been completed, which can be seen in the embodiment shown in FIG.
  • the foregoing step S1 may include:
  • the optical mask 400 is shielded by the shielding member 500, and the actual light transmitting region 423 having the unit pattern is formed on the optical mask 400; the optical mask 400 and the shutter 500 forming the actual light transmitting region 423 are integrally moved.
  • the exposure area 601 of the current period that is opposite to the actual light transmission area 423 that is moved, or moved and rotated, is determined on the substrate to be exposed 600 to the current designated position, or moved to the current specified position as a whole and rotated to the current specified angle.
  • the specified pattern (unit pattern) of the optical mask 400 is located in the light transmitting region.
  • the step S1 may include: blocking the optical mask with the shielding member. Forming an actual light-shielding region having a unit pattern on the optical mask; moving the optical mask and the shutter forming the actual light-shielding region as a whole to the current designated position, or moving integrally to the current designated position and rotating to the current specified angle, The exposed area of the current period facing the area outside the actual light-shielding area after moving, or moving and rotating, is determined on the substrate to be exposed.
  • step S1 may include:
  • the moving, or moving, and rotated optical mask 400 is shielded, and an actual light transmitting region 423 having a moving, or moving, and rotated unit pattern is formed on the optical mask 400;
  • the exposure area 601 of the current period that is opposite to the actual light transmission area 423 that is moved, or moved and rotated, is determined.
  • the specified pattern (unit pattern) of the optical mask 400 is located in the light transmitting region.
  • step S1 may include: moving the optical mask onto the substrate to be exposed The current specified position, or move the optical mask to the current designated position and rotate the optical mask to the current specified angle; the moving shutter occludes the moved, moved, and rotated optical mask, Forming an actual light-shielding region having a moving, or moving, and rotated unit pattern on the optical mask; determining, on the substrate to be exposed, a region other than the actual light-shielding region after moving, or moving and rotating The exposure area of the current cycle.
  • the movement and rotation of the optical mask 400 and the shutter 500, as well as the exposure process can all be performed by an exposure machine.
  • the number of the shielding members is not limited, and the shielding members may be disposed in one, two or any number.
  • the shape and size of the shielding member are not limited.
  • the shielding member may adopt a rectangular shape, and may also adopt other shapes such as a triangle, a circle, etc., to realize flexible adjustment of the shielding area, in actual production. In the case, depending on the specific needs and the characteristics of the exposure machine.
  • the first optical mask having the first pattern to be exposed can be prepared by 8 exposures.
  • the film substrate 200, the first pattern to be exposed is two rounded rectangles, wherein the size of each rounded rectangle is larger than the size of the rounded rectangle in the optical mask 400, and the preparation process can be as shown in FIG. 7.
  • the exposure process for each cycle can be similar. Taking the first cycle as an example, during the exposure of the first cycle:
  • the optical mask 400 is shielded by the shielding member 500, and the first actual light transmitting region 423 having the first unit pattern is formed on the optical mask 400, that is, the unmasked portion of the transparent region of the designated pattern
  • the portion blocked by 500 is the first actual light transmitting region 423; the optical mask 400 and the shutter 500 forming the first actual light transmitting region 423 are integrally moved to the current designated position on the substrate 600 to be exposed, and the film to be exposed is
  • the first exposure area 601 is determined; the first exposure area 601 is exposed, and after the exposure, it is judged that only one first exposure area 601 cannot splicing the first pattern to be exposed, so the next cycle is continued. Exposure. After the exposure of the eighth cycle is completed, it is judged that the eight first exposure regions 601 that have been exposed can splicing out the first pattern to be exposed, and the exposure ends.
  • a second optical having a second pattern to be exposed can be prepared by 16 exposures based on the optical mask 400 having a rounded rectangular light-shielding region 410 as shown in FIG. 3A.
  • the mask substrate 200, the second pattern to be exposed includes four rounded rectangles, wherein the size of each rounded rectangle is smaller than the size of the rounded rectangle in the optical mask 400, and the preparation process is as shown in FIG. .
  • the determined second unit pattern is as shown in FIG. 8; and then based on the second The unit pattern is periodically exposed to the exposure film until a pattern to be exposed is formed on the substrate 600 to be exposed, thereby obtaining the second optical mask substrate 200.
  • the exposure process for each cycle can be similar.
  • the first period as an example, during the exposure of the first period: the optical mask 400 is shielded by the shutter 500, and the second actual pattern having the second unit pattern is formed on the optical mask 400.
  • the light-transmitting region 423 that is, the portion of the light-transmitting region of the designated pattern that is not blocked by the shutter 500 is the second actual light-transmitting region 423; the optical mask 400 and the shutter 500 that will form the second actual light-transmitting region 423 Moving to the current designated position on the substrate to be exposed 600, determining the second exposure area 601 on the film to be exposed; exposing the second exposure area 601, after the exposure, it is judged that only one second exposure The area 601 cannot splicing out the second pattern to be exposed, so the exposure of the next cycle is continued. After the exposure of the 16th cycle is completed, it is judged that the exposed 16 second exposure regions 601 can splicing out the second pattern to be exposed, and the exposure ends.
  • a specified pattern (unit pattern) of the optical mask is located in the light-shielding region during each period of exposure, as shown in FIGS. 9 and 10. As shown, the following steps can be included:
  • the above process is repeated, as shown in Fig. 9, in each exposure process, except for the area to be exposed, the other areas are shielded by the shutter 500.
  • the photoresist for example, a negative photoresist
  • the region where the photoresist is not exposed for example, the region 601a
  • Patterning for example, wet etching
  • an optical mask substrate having a target pattern for example, an optical mask substrate shown in the eighth cycle of FIG. 9 is obtained.
  • any one of the optical masks having the specified pattern can be prepared by multiple exposures and different times of exposure.
  • the optical mask substrate of any pattern to be exposed; the method has strong versatility, can greatly reduce the production cost, and reduce the waste of production resources.
  • the embodiment of the present invention has at least the following beneficial effects:
  • an optical mask substrate having different patterns to be exposed is prepared by a periodic exposure process to meet the demand for preparing different products, which can be greatly reduced. Production costs, reducing waste of production resources.

Abstract

Provided are an optical mask plate (400) and a method for preparing an optical mask substrate (200) based on the optical mask plate (400). The optical mask plate (400) comprises a light-transmitting region (420) and a light-blocking region (410), wherein the light-transmitting region (420) has a designated pattern (1001), the designated pattern comprises (1001) at least one unit pattern, and the unit pattern is configured to be spliced to form at least two target patterns (1002). The optical mask plate (400) can be used to prepare a variety of different optical mask substrates (200), thereby increasing the universality.

Description

光学掩膜板及基于光学掩膜板的光学掩膜基板的制备方法Optical mask and preparation method of optical mask substrate based on optical mask
本申请要求于2018年3月26日递交的中国专利申请第201810254408.X号的优先权,在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。The present application claims priority to Chinese Patent Application No. 201 810 254 408 </ RTI> filed on March 26, 2018, the entire disclosure of which is hereby incorporated by reference.
技术领域Technical field
本公开至少一个实施例涉及一种光学掩膜板及基于光学掩膜板的光学掩膜基板的制备方法。At least one embodiment of the present disclosure is directed to a method of fabricating an optical mask and an optical mask based optical mask substrate.
背景技术Background technique
近年来TFT-LCD(Thin Film Transistor Liquid Crystal Display,薄膜晶体管液晶显示器)以其低工作电压、低功耗、低辐射、低空间占有率以及轻薄美观等优势,不断普及,已成为市场的主流。In recent years, TFT-LCD (Thin Film Transistor Liquid Crystal Display) has become popular in the market due to its low operating voltage, low power consumption, low radiation, low space occupancy, and light and beautiful appearance.
TFT-LCD主要由阵列基板(TFT玻璃基板)和彩膜基板(CF玻璃基板)组成,在阵列基板和彩膜基板对盒(Cell对盒)工艺过程中,需要对封框胶(seal)进行固化;固化方式通常是先采用紫外光(UV)照射的方法进行预固化,然后再进行热固化。The TFT-LCD is mainly composed of an array substrate (TFT glass substrate) and a color film substrate (CF glass substrate). In the process of the array substrate and the color film substrate to the box (Cell to the box), the seal is required to be sealed. Curing; curing is usually pre-cured by ultraviolet (UV) irradiation followed by thermal curing.
在预固化过程中,紫外光会对显示面板的有效显示区域AA(Active Area)区产生较大的影响,因此需要采用光学掩膜基板对AA区进行遮挡,因此,光学掩膜基板的设计结构会影响显示面板的制造工艺。During the pre-curing process, the ultraviolet light will have a large influence on the effective display area AA (Active Area) of the display panel, so the optical mask substrate is required to block the AA area, and therefore, the design structure of the optical mask substrate Will affect the manufacturing process of the display panel.
发明内容Summary of the invention
本公开至少一个实施例提供了一种光学掩膜板,该光学掩膜板包括透光区和遮光区,所述透光区和所述遮光区之一具有指定图案,所述指定图案包括至少一个单元图案,所述单元图案设置为可拼接以形成至少两种目标图案。At least one embodiment of the present disclosure provides an optical mask comprising a light transmissive region and a light shielding region, one of the light transmissive region and the light shielding region having a designated pattern, the specified pattern including at least A unit pattern that is arranged to be spliced to form at least two target patterns.
例如,在本公开至少一个实施例提供的光学掩膜板中,所述指定图案和所述目标图案的大小不同。For example, in an optical mask provided by at least one embodiment of the present disclosure, the specified pattern and the target pattern are different in size.
例如,在本公开至少一个实施例提供的光学掩膜板中,所述指定图案 和所述目标图案的形状不同。For example, in an optical mask provided in at least one embodiment of the present disclosure, the specified pattern and the shape of the target pattern are different.
例如,在本公开至少一个实施例提供的光学掩膜板中,所述指定图案包括至少两个不同类型的所述单元图案,所述目标图案由两种以上的单元图案拼接而成。For example, in an optical mask provided in at least one embodiment of the present disclosure, the specified pattern includes at least two different types of the unit patterns, the target patterns being spliced from two or more unit patterns.
例如,在本公开至少一个实施例提供的光学掩膜板中,所述指定图案包括矩形、井字形和十字形至少之一。For example, in an optical mask provided in at least one embodiment of the present disclosure, the specified pattern includes at least one of a rectangle, a cross, and a cross.
例如,在本公开至少一个实施例提供的光学掩膜板中,所述矩形具体为圆角矩形;或,所述井字形包括两个沿第一方向的第一条形部分和两个沿第二方向的第二条形部分,每个所述第一条形部分与两个所述第二条形部分都相交叉,至少一个交叉处的拐角呈圆角,所述第一方向与所述第二方向相垂直;或,所述十字形包括一个沿第一方向的第一条形部分和一个沿第二方向的第二条形部分,所述第一条形部分和所述第二条形部分相交叉,交叉处的拐角呈圆角,所述第一方向与所述第二方向垂直。For example, in an optical mask provided by at least one embodiment of the present disclosure, the rectangle is specifically a rounded rectangle; or the well pattern includes two first strip portions along the first direction and two along the first a second strip-shaped portion in two directions, each of the first strip-shaped portions intersecting two of the second strip-shaped portions, and a corner of at least one intersection is rounded, the first direction and the The second direction is perpendicular; or the cross includes a first strip portion along the first direction and a second strip portion along the second direction, the first strip portion and the second strip The shaped portions intersect, the corners at the intersection are rounded, and the first direction is perpendicular to the second direction.
例如,在本公开至少一个实施例提供的光学掩膜板中,所述圆角矩形、井字形或十字形中包括所述单元图案。For example, in an optical mask provided in at least one embodiment of the present disclosure, the unit pattern is included in the rounded rectangle, the cross or the cross.
例如,在本公开至少一个实施例提供的光学掩膜板中,所述单元图案为L形,所述L形的单元图案包括端点相交的沿不同方向的第一条状部和第二条状部。For example, in an optical mask provided by at least one embodiment of the present disclosure, the unit pattern is L-shaped, and the L-shaped unit pattern includes first strips and second strips in different directions in which the endpoints intersect unit.
例如,在本公开至少一个实施例提供的光学掩膜板中,所述第一条状部和所述第二条状部相交处的拐角呈圆角。For example, in an optical mask provided in at least one embodiment of the present disclosure, a corner at which the first strip and the second strip meet is rounded.
例如,在本公开至少一个实施例提供的光学掩膜板中,所述第一条状部和所述第二条状部为透明条状部或者非透明条状部。For example, in an optical mask provided in at least one embodiment of the present disclosure, the first strip and the second strip are transparent strips or non-transparent strips.
本公开至少一个实施例提供一种基于上述任一实施例中的光学掩膜板的光学掩膜基板的制备方法,包括:确定出用以拼接出目标图案的所述单元图案,基于所述单元图案周期性地对待曝光基板进行曝光,直到在所述待曝光基板上形成所述目标图案,得到所述光学掩膜基板。At least one embodiment of the present disclosure provides a method of fabricating an optical mask substrate based on the optical mask of any of the above embodiments, comprising: determining the unit pattern for splicing out a target pattern, based on the unit The pattern is periodically exposed to the exposed substrate until the target pattern is formed on the substrate to be exposed, and the optical mask substrate is obtained.
例如,在本公开至少一个实施例提供的光学掩膜基板的制备方法中,在每个周期的曝光过程中,采用遮挡件和所述光学掩膜板,在所述待曝光基板上确定出当前周期的曝光区域;对所述当前周期的曝光区域进行曝光。For example, in the method for fabricating an optical mask substrate provided by at least one embodiment of the present disclosure, during each period of exposure, a mask and the optical mask are used to determine the current on the substrate to be exposed. a period of exposure of the period; exposing the exposed area of the current period.
例如,在本公开至少一个实施例提供的光学掩膜基板的制备方法中,在每个周期的曝光过程中,所述对所述当前周期的曝光区域进行曝光之后, 还包括:所述透光区具有所述指定图案,判断所述待曝光基板上已曝光的各曝光区域是否能够拼接出所述目标图案;若是,结束周期性的曝光,若否,进行下一个周期的曝光;或者所述遮光区具有所述指定图案,判断所述待曝光基板上的各曝光区域之外的区域是否能够拼接出所述目标图案,若是,结束周期性的曝光,若否,进行下一个周期的曝光。For example, in the method for fabricating an optical mask substrate provided by at least one embodiment of the present disclosure, after exposing the exposed region of the current period during the exposure process of each period, the method further includes: the light transmission The area has the specified pattern, determining whether each exposed area on the substrate to be exposed can be spliced out of the target pattern; if so, ending the periodic exposure, if not, performing the exposure of the next period; or The light shielding area has the specified pattern, and it is determined whether the area other than each exposed area on the substrate to be exposed can splicing out the target pattern, and if so, the periodic exposure is ended, and if not, the exposure of the next period is performed.
例如,在本公开至少一个实施例提供的光学掩膜基板的制备方法中,所述透光区具有所述指定图案,在完成每周期的曝光或者完成所有周期的曝光之后,进行显影;或者所述遮光区具有所述指定图案,在完成所有周期的曝光之后,进行显影。For example, in a method of fabricating an optical mask substrate provided by at least one embodiment of the present disclosure, the light transmissive region has the specified pattern, and after performing exposure per cycle or completing exposure of all cycles, development is performed; The opaque area has the specified pattern, and development is performed after all periods of exposure have been completed.
例如,在本公开至少一个实施例提供的光学掩膜基板的制备方法中,所述在所述待曝光基板上确定出当前周期的曝光区域包括:采用所述遮挡件对所述光学掩膜板进行遮挡,在所述光学掩膜板上形成具有所述单元图案的实际透光区或实际遮光区;将形成所述实际透光区或实际遮光区的所述光学掩膜板和所述遮挡件整体移动至当前指定位置、或整体移动至当前指定位置且旋转至当前指定角度,在所述待曝光基板上确定出与移动、或移动且旋转后的所述实际透光区或所述实际遮光区之外的区域正对的当前曝光区域。For example, in the method for fabricating an optical mask substrate provided by at least one embodiment of the present disclosure, the determining an exposure region of the current period on the substrate to be exposed includes: using the shielding member to the optical mask Performing occlusion, forming an actual light-transmissive area or an actual light-shielding area having the unit pattern on the optical mask; the optical mask and the occlusion which will form the actual light-transmissive area or the actual light-shielding area Moving the piece as a whole to the current designated position, or moving to the current specified position as a whole and rotating to the current specified angle, determining the actual light-transmissive area or the actual after moving, or moving and rotating on the substrate to be exposed The area outside the shading area is directly opposite the current exposure area.
例如,在本公开至少一个实施例提供的光学掩膜基板的制备方法中,所述在所述待曝光基板上确定出当前周期的曝光区域包括:For example, in the method for fabricating an optical mask substrate provided by at least one embodiment of the present disclosure, the determining an exposure region of the current period on the substrate to be exposed includes:
将所述光学掩膜板移动至所述模待曝光基板上的当前指定位置,或者将所述光学掩膜板移动至所述模待曝光基板上的当前指定位置且将所述光学掩膜板旋转至当前指定角度;移动所述遮挡件对所述移动、或移动且旋转后的光学掩膜板进行遮挡,在该光学掩膜板上形成具有移动、或移动且旋转后的所述单元图案的实际透光区或实际遮光区;在所述待曝光基板上确定出与移动、或移动且旋转后的所述实际透光区或所述实际遮光区之外的区域正对的当前曝光区域。Moving the optical mask to a current designated position on the mold substrate to be exposed, or moving the optical mask to a current designated position on the mold substrate to be exposed and using the optical mask Rotating to a currently specified angle; moving the shutter to occlude the moving, or moving and rotating optical mask, forming the unit pattern with moving, or moving and rotating, on the optical mask An actual light-transmissive area or an actual light-shielding area; determining, on the substrate to be exposed, a current exposed area that is opposite to the area that is moved, or moved, and rotated, or the area other than the actual light-shielding area .
附图说明DRAWINGS
为了更清楚地说明本发明实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例,而非对本发明的限制。In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly described below. It is obvious that the drawings in the following description relate only to some embodiments of the present invention, and are not intended to limit the present invention. .
为了更清楚地说明本公开实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本公开的一些实施例,而非对本公开的限制。In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly described below. It is obvious that the drawings in the following description relate only to some embodiments of the present disclosure, and are not to limit the disclosure. .
图1为采用一种光学掩膜基板对封框胶进行预固化的原理示意图;1 is a schematic view showing the principle of pre-curing a sealant with an optical mask substrate;
图2为一种光学掩膜板与TFT-LCD产品的对应关系示意图;2 is a schematic diagram of a correspondence relationship between an optical mask and a TFT-LCD product;
图3A为本公开一些实施例提供的一种光学掩膜板与TFT-LCD产品的对应关系示意图;3A is a schematic diagram of a corresponding relationship between an optical mask and a TFT-LCD product according to some embodiments of the present disclosure;
图3B为本公开一些实施例提供的另一种光学掩膜板与TFT-LCD产品的对应关系示意图;3B is a schematic diagram of correspondence between another optical mask and a TFT-LCD product according to some embodiments of the present disclosure;
图4为本公开一些实施例提供的一种光学掩膜板的结构示意图;4 is a schematic structural diagram of an optical mask according to some embodiments of the present disclosure;
图5为本公开一些实施例提供的另一种光学掩膜板的结构示意图;FIG. 5 is a schematic structural diagram of another optical mask provided by some embodiments of the present disclosure; FIG.
图6为本公开一些实施例提供的又一种光学掩膜板的结构示意图;FIG. 6 is a schematic structural diagram of still another optical mask according to some embodiments of the present disclosure;
图7为本公开一些实施例提供的光学掩膜基板的制备方法的一个具体示例图;FIG. 7 is a specific example diagram of a method of fabricating an optical mask substrate according to some embodiments of the present disclosure;
图8为本公开一些实施例提供的光学掩膜基板的制备方法的另一个具体示例图;FIG. 8 is another specific example diagram of a method for fabricating an optical mask substrate according to some embodiments of the present disclosure;
图9为本公开一些实施例提供的光学掩膜基板的制备方法的一个具体示例图;以及FIG. 9 is a specific example diagram of a method of fabricating an optical mask substrate according to some embodiments of the present disclosure;
图10为本公开一些实施例的一个周期内的曝光过程的流程示意图。Figure 10 is a flow diagram of an exposure process within a cycle of some embodiments of the present disclosure.
具体实施方式detailed description
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例的附图,对本发明实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于所描述的本发明的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions of the embodiments of the present invention will be clearly and completely described in the following with reference to the accompanying drawings. It is apparent that the described embodiments are part of the embodiments of the invention, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the described embodiments of the present invention without departing from the scope of the invention are within the scope of the invention.
除非另外定义,本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同, 而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。Unless otherwise defined, technical terms or scientific terms used in the present disclosure are intended to be in the ordinary meaning of those of ordinary skill in the art. The words "first," "second," and similar terms used in the present disclosure do not denote any order, quantity, or importance, but are used to distinguish different components. The words "including" or "comprising", and the like, are intended to mean that the element or item that is present in the <RTIgt; The words "connected" or "connected" and the like are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Upper", "lower", "left", "right", etc. are only used to indicate the relative positional relationship, and when the absolute position of the object to be described is changed, the relative positional relationship may also change accordingly.
在预固化过程中,可以采用光学掩膜基板(例如紫外光玻璃基板UV Glass)上的金属图案对AA区进行遮挡,使紫外光仅对封框胶进行照射,而不会对AA区进行照射,其原理如图1所示。例如,在图1中,100可以为TFT-LCD产品,101可以为封框胶,102为AA区,200可以为光学掩膜基板,201可以为光学掩膜基板的遮挡区。In the pre-curing process, the metal pattern on the optical mask substrate (for example, UV Glass) can be used to shield the AA region, so that the ultraviolet light only irradiates the sealant without irradiating the AA region. The principle is shown in Figure 1. For example, in FIG. 1, 100 may be a TFT-LCD product, 101 may be a frame sealant, 102 may be an AA area, 200 may be an optical mask substrate, and 201 may be an occlusion area of an optical mask substrate.
在光学掩膜基板200(例如紫外光玻璃基板UV Glass)的制备方法中,通常采用具有一定金属图案的掩膜板对具有金属层的玻璃基板进行曝光、刻蚀等,得到具有同样金属图案的光学掩膜基板200。In the preparation method of the optical mask substrate 200 (for example, UV glass substrate), the glass substrate having the metal layer is usually exposed, etched, etc. by using a mask having a certain metal pattern to obtain the same metal pattern. Optical mask substrate 200.
对于具有不同形状的封框胶101的TFT-LCD产品100,通常需要具有不同图案(pattern)的遮挡区201的光学掩膜基板200来遮挡AA区102时,也就需要分别使用多种图案的光学掩膜板(例如紫外光掩膜板UV Mask)来进行制备相应的光学掩膜基板200,其原理如图2所示。For the TFT-LCD product 100 having the different shapes of the sealant 101, it is generally required to have the optical mask substrate 200 of the masking region 201 having different patterns to block the AA region 102, and it is also necessary to use a plurality of patterns respectively. An optical mask (such as a UV mask) is used to prepare the corresponding optical mask substrate 200, the principle of which is shown in FIG.
由图2可以看出,对于具有第一种封框胶形状的TFT-LCD产品100A,需要使用适用于第一种封框胶形状的光学掩膜板300A来制备相应的光学掩膜基板200;对于具有第二种封框胶形状的TFT-LCD产品100B,需要使用适用于第一种封框胶形状的光学掩膜板300B来制备相应的光学掩膜基板200。It can be seen from FIG. 2 that for the TFT-LCD product 100A having the first sealant shape, it is required to prepare the corresponding optical mask substrate 200 using the optical mask 300A suitable for the first sealant shape; For the TFT-LCD product 100B having the second frame sealant shape, it is necessary to prepare the corresponding optical mask substrate 200 using the optical mask 300B suitable for the first frame sealant shape.
在图2所示的光学掩膜基板200的制备方法中,对于每种TFT-LED产品100,可能需要单独制作不同的光学掩膜板以制备相应的光学掩膜基板200,生产成本较大;当光学掩膜基板200的制备量特别少时,为此单独制作一种或多种光学掩膜板,则更增加了生产成本,也造成了生产资源的浪费。In the method for fabricating the optical mask substrate 200 shown in FIG. 2, for each TFT-LED product 100, it may be necessary to separately fabricate different optical mask plates to prepare the corresponding optical mask substrate 200, which is relatively expensive to produce; When the preparation amount of the optical mask substrate 200 is particularly small, one or more optical mask sheets are separately produced for this purpose, which further increases the production cost and also causes waste of production resources.
本公开至少一个实施例提供了一种光学掩膜板及基于光学掩膜板的光学掩膜基板的制备方法。该光学掩膜板包括透光区和遮光区,透光区和遮光区之一具有指定图案,指定图案包括至少一个单元图案,单元图案设置为可拼接以形成至少两种目标图案。使用具有指定图案的光学掩膜板,通过多次曝光,既可形成具有多种不同的目标图案的光学掩膜基板以适用 多种TFT-LED产品,该方案可降低生产成本,减少资源的浪费。At least one embodiment of the present disclosure provides an optical mask and a method of preparing an optical mask substrate based on the optical mask. The optical mask includes a light transmissive area and a light blocking area, one of the light transmissive area and the light shielding area having a designated pattern, the designated pattern including at least one unit pattern, and the unit pattern being arranged to be spliced to form at least two target patterns. By using an optical mask having a specified pattern, an optical mask substrate having a plurality of different target patterns can be formed by multiple exposures to be applied to a plurality of TFT-LED products, which can reduce production cost and waste of resources. .
例如,在本公开至少一个实施例中,指定图案包括多个分区,单元图案可以为分区中的一个,也可以为多个分区的组合。该单元图案在指定图案中所占的部分可以参见下述实施例(如图7和图8所示的实施例)中的相关说明,在此不做赘述。For example, in at least one embodiment of the present disclosure, the designated pattern includes a plurality of partitions, and the unit pattern may be one of the partitions or a combination of the plurality of partitions. The portion occupied by the unit pattern in the specified pattern can be referred to the related description in the following embodiments (the embodiments shown in FIG. 7 and FIG. 8), and details are not described herein.
需要说明的是,在本公开至少一个实施例中,光学掩膜板通过多次曝光以获得光学掩膜基板的方法可以为光刻构图工艺。在该工艺中,光刻胶至少分为正性光刻胶和负性光刻胶,采用不同类型的光刻胶时,指定图案可以根据光刻胶的类型选择设计在光学掩膜板的透光区或者遮光区。It should be noted that, in at least one embodiment of the present disclosure, the method of obtaining an optical mask substrate by multiple exposure of the optical mask may be a photolithography patterning process. In the process, the photoresist is at least divided into a positive photoresist and a negative photoresist. When different types of photoresist are used, the specified pattern can be selected and designed in the optical mask according to the type of the photoresist. Light zone or shade zone.
例如,在本公开一些实施例中,制造光学掩膜基板的光刻构图工艺中采用的为正性光刻胶,光学掩膜板的透光区包括指定图案。For example, in some embodiments of the present disclosure, a positive photoresist is used in a photolithographic patterning process for fabricating an optical mask substrate, and the light transmissive region of the optical mask includes a specified pattern.
例如,在本公开另一些实施例中,制造光学掩膜基板的光刻构图工艺中采用的为负性光刻胶,光学掩膜板的遮光区包括指定图案。For example, in other embodiments of the present disclosure, a negative photoresist is used in the photolithographic patterning process for fabricating an optical mask substrate, and the light shielding region of the optical mask includes a specified pattern.
下面,结合附图说明对根据本公开至少一个实施例中的光学掩膜板及基于光学掩膜板的光学掩膜基板的制备方法进行说明。Hereinafter, a method of preparing an optical mask and an optical mask-based optical mask substrate according to at least one embodiment of the present disclosure will be described with reference to the accompanying drawings.
例如,在本公开一些实施例提供的光学掩膜板及基于光学掩膜板的光学掩膜基板的制备方法中,光学掩膜板与TFT-LCD产品的对应关系如图3A所示,使用具有指定图案1001的光学掩膜板400,通过多次曝光,既可形成多种不同的光学掩膜基板以适用多种TFT-LED产品(图3A中的100A和100B),该方案可降低生产成本,减少资源的浪费。在图3A所示的实施例中,制造光学掩膜基板的光刻构图工艺中采用的为正性光刻胶,光学掩膜板400的指定图案1001位于透光区,在进行曝光时,指定图案1001中用于曝光的部分(单元图案)使得光透过,并使得透过的光射向目标图案1002所在的区域的正性光刻胶,显影后,正性光刻胶图案的与单元图案对应的部分被去除,以剩余的正性光刻胶为掩膜进行构图工艺(例如湿刻)以获得具有目标图案(或其一部分)的光学掩膜基板。For example, in the optical mask board and the optical mask substrate-based optical mask substrate manufacturing method provided by some embodiments of the present disclosure, the corresponding relationship between the optical mask board and the TFT-LCD product is as shown in FIG. 3A, and the use has By designing the optical mask 400 of the pattern 1001, a plurality of different optical mask substrates can be formed by multiple exposures to be applied to various TFT-LED products (100A and 100B in FIG. 3A), which can reduce production costs. Reduce waste of resources. In the embodiment shown in FIG. 3A, a positive photoresist is used in the photolithography patterning process for fabricating an optical mask substrate, and the specified pattern 1001 of the optical mask 400 is located in the light transmissive region, and is specified during exposure. The portion (unit pattern) for exposure in the pattern 1001 causes light to pass through, and causes the transmitted light to be directed toward the positive photoresist in the region where the target pattern 1002 is located, and after development, the unit of the positive photoresist pattern The portion corresponding to the pattern is removed, and a patterning process (for example, wet etching) is performed using the remaining positive photoresist as a mask to obtain an optical mask substrate having a target pattern (or a portion thereof).
例如,在本公开另一些实施例提供的光学掩膜板及基于光学掩膜板的光学掩膜基板的制备方法中,光学掩膜板与TFT-LCD产品的对应关系如图3B所示,使用具有指定图案1001的光学掩膜板400,通过多次曝光,既可形成多种不同的光学掩膜基板以适用多种TFT-LED产品(图3B中的100A和100B),该方案可降低生产成本,减少资源的浪费。在图3B所示 的实施例中,制造光学掩膜基板的光刻构图工艺中采用的为负性光刻胶,光学掩膜板400的指定图案1001位于遮光区,在进行曝光时,指定图案1001中用于遮光的部分(单元图案)对光进行遮挡,曝光、显影后,负性光刻胶图案的与单元图案对应的部分被去除,以剩余的负性光刻胶为掩膜进行构图工艺(例如湿刻)以获得具有目标图案(或其一部分)的光学掩膜基板。For example, in the optical mask plate and the optical mask substrate-based optical mask substrate provided by other embodiments of the present disclosure, the corresponding relationship between the optical mask and the TFT-LCD product is as shown in FIG. 3B. With the optical mask 400 having the specified pattern 1001, a plurality of different optical mask substrates can be formed by multiple exposures to be applied to various TFT-LED products (100A and 100B in FIG. 3B), which can reduce production. Cost, reducing waste of resources. In the embodiment shown in FIG. 3B, a negative photoresist is used in the photolithography patterning process for fabricating the optical mask substrate, and the specified pattern 1001 of the optical mask 400 is located in the light-shielding region, and the pattern is specified when the exposure is performed. The portion (unit pattern) for shielding light in 1001 blocks light, and after exposure and development, the portion corresponding to the cell pattern of the negative photoresist pattern is removed, and the remaining negative photoresist is used as a mask for patterning. A process (eg, wet etching) is performed to obtain an optical mask substrate having a target pattern (or a portion thereof).
例如,在本公开至少一个实施例中,指定图案和目标图案的大小不同。如图3A和图3B所示,光学掩膜板400的指定图案小于对应TFT-LED产品100A的光学掩膜基板的目标图案1002,且大于对应TFT-LED产品100B的光学掩膜基板的目标图案1003。For example, in at least one embodiment of the present disclosure, the size of the designated pattern and the target pattern are different. As shown in FIGS. 3A and 3B, the specified pattern of the optical mask 400 is smaller than the target pattern 1002 of the optical mask substrate corresponding to the TFT-LED product 100A, and larger than the target pattern of the optical mask substrate corresponding to the TFT-LED product 100B. 1003.
例如,在本公开至少一个实施例中,指定图案和目标图案的形状不同。如图3A和图3B所示,光学掩膜板400的指定图案1001的长宽比、对应TFT-LED产品100A的光学掩膜基板的目标图案1002的长宽比和对应TFT-LED产品100B的光学掩膜基板的目标图案1003的长宽比都不相等。For example, in at least one embodiment of the present disclosure, the shape of the designated pattern and the target pattern are different. As shown in FIGS. 3A and 3B, the aspect ratio of the designated pattern 1001 of the optical mask 400, the aspect ratio of the target pattern 1002 of the optical mask substrate corresponding to the TFT-LED product 100A, and the corresponding TFT-LED product 100B The aspect ratios of the target patterns 1003 of the optical mask substrate are not equal.
下面,以光学掩膜板中的指定图案位于透光区为例,对本公开下述至少一个实施例中的技术方案进行说明。在该情况下,在曝光过程中,目标图案对应曝光区域,因此目标图案可以成为待曝光图案。Hereinafter, the technical solution in at least one embodiment of the present disclosure will be described by taking a specific pattern in the optical mask in a light transmitting region as an example. In this case, during the exposure, the target pattern corresponds to the exposed area, and thus the target pattern may become the pattern to be exposed.
例如,本公开至少一个实施例提供的光学掩膜板中,该光学掩膜板400的平面结构如图4、图5或图6所示。该光学掩膜板400包括遮光区410以及具有指定图案的透光区420,指定图案1001包括能够拼接出至少两种待曝光图案(1002和1003)的至少一个单元图案。For example, in an optical mask provided by at least one embodiment of the present disclosure, the planar structure of the optical mask 400 is as shown in FIG. 4, FIG. 5 or FIG. The optical mask 400 includes a light-shielding region 410 and a light-transmitting region 420 having a prescribed pattern, and the design pattern 1001 includes at least one unit pattern capable of splicing out at least two patterns to be exposed (1002 and 1003).
应用具有指定图案的光学掩膜板400,采用一个掩膜板通过不同次数的曝光,即可形成多种具有不同待曝光图案的光学掩膜基板,光学掩膜板400的通用性强,可有效地降低生产成本,减少资源的浪费。By using an optical mask 400 having a specified pattern, a plurality of optical mask substrates having different patterns to be exposed can be formed by using a mask for different times of exposure. The optical mask 400 has high versatility and can be effective. Reduce production costs and reduce waste of resources.
例如,如图4、图5或图6所示,光学掩膜板400制备的光学掩膜基板200包括遮光区410以及具有待曝光图案的透光区420。For example, as shown in FIG. 4, FIG. 5 or FIG. 6, the optical mask substrate 200 prepared by the optical mask 400 includes a light shielding region 410 and a light transmitting region 420 having a pattern to be exposed.
例如,在本公开至少一个实施例中,光学掩膜板的指定图案包括的单元图案为至少一种,待曝光图案可由任意一种单元图案拼接而成,也可由两种以上的单元图案拼接而成。For example, in at least one embodiment of the present disclosure, the specified pattern of the optical mask includes at least one unit pattern, and the pattern to be exposed may be spliced by any one of the unit patterns, or may be spliced by two or more unit patterns. to make.
在本公开至少一个实施例中,指定图案(或其中的单元图案)可以包括多种形状,为了更好地适应已有的AA区(如图1中的102)和封框胶 (如图1中的101)的设计形状,在本发明实施例中,指定图案可以包括矩形、井字形和十字形至少之一。In at least one embodiment of the present disclosure, the specified pattern (or the unit pattern therein) may include a plurality of shapes in order to better adapt to the existing AA area (such as 102 in FIG. 1) and the sealant (FIG. 1). In the design shape of 101), in the embodiment of the invention, the specified pattern may include at least one of a rectangle, a cross, and a cross.
例如,在本公开至少一个实施例中,光学掩膜板的指定图案可以为矩形。例如,指定图案可以为圆角矩形,如图4所示;圆角矩形内部的区域为可在预固化封胶时用于遮挡AA区的部分遮挡区。For example, in at least one embodiment of the present disclosure, the specified pattern of the optical mask may be rectangular. For example, the designated pattern may be a rounded rectangle, as shown in FIG. 4; the area inside the rounded rectangle is a partial occlusion area that can be used to block the AA area during pre-curing of the sealant.
例如,在本公开至少一个实施例中,光学掩膜板的指定图案可以为井字形。例如,如图5所示,该井字形包括两个沿第一方向(图中的X轴方向)设置的第一条形部分421(属于透光区420)和两个沿第二方向(图中的Y轴方向)的第二条形部分422(属于透光区420),且第一方向与第二方向相垂直。每个第一条形部分421均与两个第二条形部分422相交叉,且每个交叉处的拐角均呈圆角,以更好地适应当前产品中的封框胶的设计形状。For example, in at least one embodiment of the present disclosure, the specified pattern of the optical mask may be in the shape of a square. For example, as shown in FIG. 5, the well pattern includes two first strip portions 421 (belonging to the light transmitting region 420) and two along the second direction (in the X-axis direction in the drawing). The second strip portion 422 (in the Y-axis direction) of the middle (in the light transmissive region 420), and the first direction is perpendicular to the second direction. Each of the first strip portions 421 intersects the two second strip portions 422, and the corners at each intersection are rounded to better accommodate the design shape of the sealant in the current product.
在光学掩膜板的指定图案为井字形的情况下,井字形图案不仅包含上述实施例(如图4所示的实施例)中的圆角矩形图案,还在各个方向增加了圆角矩形的局部图案,增加了图案的兼容性,适用范围更广。In the case where the specified pattern of the optical mask is a trapezoidal shape, the well-shaped pattern includes not only the rounded rectangular pattern in the above embodiment (the embodiment shown in FIG. 4) but also the rounded rectangle in each direction. The partial pattern increases the compatibility of the pattern and has a wider application range.
例如,在本公开至少一个实施例中,光学掩膜板的指定图案可以为十字形。例如,如图6所示,该十字形包括一个沿第一方向(图中的X轴方向)设置的第一条形部分421和一个沿第二方向(图中的Y轴方向)的第二条形部分422,且第一方向与第二方向相垂直。第一条形部分421均与第二条形部分422相交叉,其交叉处的拐角呈圆角,以更好地适应当前产品中的封框胶的设计形状。For example, in at least one embodiment of the present disclosure, the specified pattern of the optical mask may be a cross. For example, as shown in FIG. 6, the cross includes a first strip portion 421 disposed in a first direction (X-axis direction in the drawing) and a second portion in a second direction (Y-axis direction in the drawing) The strip portion 422 has a first direction that is perpendicular to the second direction. The first strip portions 421 are each intersected with the second strip portion 422, and the corners at the intersections are rounded to better accommodate the design shape of the sealant in the current product.
在光学掩膜板的指定图案为十字形的情况下,十字形图案在各个方向分布了圆角矩形的局部图案(例如圆角矩形的四个角和四个边),增加了图案的兼容性,适用范围更广。In the case where the specified pattern of the optical mask is a cross, the cross pattern distributes a partial pattern of rounded rectangles in various directions (for example, four corners and four sides of a rounded rectangle), increasing pattern compatibility. , the scope of application is wider.
例如,在本公开至少一个实施例中,光学掩膜板的指定图案为圆角矩形,以圆角矩形的光学掩膜板为基础,可选定适当的单元图案,基于该单元图案对待曝光基板进行多次曝光,以得到具有井字形或十字形的透光区的光学掩膜板。For example, in at least one embodiment of the present disclosure, the specified pattern of the optical mask is a rounded rectangle, based on a rounded rectangular optical mask, an appropriate unit pattern can be selected, and the substrate to be exposed based on the unit pattern Multiple exposures were made to obtain an optical mask having a well-shaped or cross-shaped light transmissive region.
例如,在本公开至少一个实施例中,光学掩膜板的指定图案为圆角矩形、井字形或十字形时,单元图案为该圆角矩形、井字形或十字形的至少一部分。For example, in at least one embodiment of the present disclosure, when the specified pattern of the optical mask is a rounded rectangle, a cross or a cross, the unit pattern is at least a portion of the rounded rectangle, a cross or a cross.
单元图案可以是指定图案(例如圆角矩形、井字形或十字形的指定图案)的任一部分,为了更符合当前产品中的封框胶的形状需求,在本公开一些实施例中,单元图案的形状可以为L形(或倒L形)。例如,在本公开另一些实施例中,单元图案的形状为直线段形。单元图案的形状可以根据需要进行设计,在此不做限制。The unit pattern may be any portion of a specified pattern (eg, a designated pattern of rounded rectangles, crosses, or crosses), in order to better conform to the shape requirements of the sealant in current products, in some embodiments of the present disclosure, the unit patterns The shape can be L-shaped (or inverted L-shaped). For example, in other embodiments of the present disclosure, the shape of the unit pattern is a straight segment shape. The shape of the unit pattern can be designed as needed, and is not limited herein.
该L形的单元图案包括端点相交的沿第一方向的第一条状部和沿第二方向的第二条状部,第一条状部和第二条状部相交处的拐角呈圆角。因此,基于该L形的单元图案制备的光学掩膜基板更符合对当前产品中的封框胶进行固化的需求。The L-shaped unit pattern includes a first strip portion intersecting the end direction in the first direction and a second strip portion along the second direction, the corner of the intersection of the first strip portion and the second strip portion being rounded . Therefore, the optical mask substrate prepared based on the L-shaped unit pattern is more in line with the need to cure the sealant in the current product.
例如,在本公开至少一个实施例中,当该单元图案属于圆角矩形的指定图案时,第一条状部的长度不大于圆角矩形中沿一方向的边长,第二条状部的长度不大于圆角矩形中沿第二方向的边长。For example, in at least one embodiment of the present disclosure, when the unit pattern belongs to a specified pattern of a rounded rectangle, the length of the first strip is not greater than the length of the side in one direction of the rounded rectangle, and the second strip is The length is not greater than the length of the side in the second direction of the rounded rectangle.
例如,在本公开至少一个实施例中,当该单元图案属于井字形的指定图案时,第一条状部的长度不大于所属第一条形部分的长度,第二条状部的长度不大于所属第二条形部分的长度。For example, in at least one embodiment of the present disclosure, when the unit pattern belongs to a specified pattern of a well-shaped shape, the length of the first strip portion is not greater than the length of the associated first strip portion, and the length of the second strip portion is not greater than The length of the second strip portion.
需要说明的是,在本公开至少一个实施例中,在光学掩膜板中的指定图案位于透光区的情况下(如图3A、图4、图5和图6所示的实施例),第一条状部和第二条状部为透明条状部;在光学掩膜板中的指定图案位于遮光区的情况下(如图3B所示的实施例),第一条状部和第二条状部为非透明条状部,非透明条状部可以遮光。It should be noted that, in at least one embodiment of the present disclosure, in a case where a specified pattern in the optical mask is located in the light transmitting region (as shown in the embodiments shown in FIGS. 3A, 4, 5, and 6), The first strip and the second strip are transparent strips; in the case where the designated pattern in the optical mask is located in the shade (as in the embodiment shown in FIG. 3B), the first strip and the first strip The two strips are non-transparent strips, and the non-transparent strips can be shielded from light.
例如,在本公开至少一个实施例中,当该单元图案属于十字形时,第一条状部的长度不大于第一条形部分的长度,第二条状部的长度不大于第二条形部分的长度。For example, in at least one embodiment of the present disclosure, when the unit pattern belongs to a cross shape, the length of the first strip portion is not greater than the length of the first strip portion, and the length of the second strip portion is not greater than the second strip shape The length of the part.
例如,在本公开至少一个实施例中,如图4、图5和图6所示,光学掩膜板400还可包括掩膜板边框(Mask frame)430,该掩膜板边框430为遮光区域,用于形成曝光区域(如图7中的601)的边界。For example, in at least one embodiment of the present disclosure, as shown in FIGS. 4, 5, and 6, the optical mask 400 may further include a mask frame 430, which is a light-shielding region. Used to form the boundary of the exposed area (601 in Fig. 7).
在本公开至少一个实施例中,提供了至少一种具有指定图案的光学掩膜板,任意一种光学掩膜板均可用于制备多种不同的光学掩膜基板,通用性较强,可大大降低生产成本,减少生产资源的浪费。In at least one embodiment of the present disclosure, at least one optical mask having a specified pattern is provided, and any of the optical masks can be used to prepare a plurality of different optical mask substrates, which is highly versatile and can be greatly Reduce production costs and reduce waste of production resources.
本公开至少一个实施例提供了一种光学掩膜基板的制备方法。例如,图7和图8分别示出了该制备方法的两个典型示例。At least one embodiment of the present disclosure provides a method of fabricating an optical mask substrate. For example, FIGS. 7 and 8 respectively show two typical examples of the preparation method.
该制备方法包括:确定出能够拼接出待曝光图案的单元图案,基于该单元图案周期性地对待曝光基板600进行曝光,直到在待曝光基板600上形成待曝光图案,得到可用于固化封框胶101的光学掩膜基板200。其中,待曝光基板600为带有金属膜层的玻璃基板,待曝光图案为待曝光的金属膜层的图案。The preparation method includes: determining a unit pattern capable of splicing out a pattern to be exposed, and periodically exposing the substrate 600 to be exposed based on the unit pattern until a pattern to be exposed is formed on the substrate 600 to be exposed, thereby obtaining a sealable adhesive that can be used for curing The optical mask substrate 200 of 101. The substrate to be exposed 600 is a glass substrate with a metal film layer, and the pattern to be exposed is a pattern of a metal film layer to be exposed.
例如,在本公开至少一个实施例提供的光学掩膜基板的制备方法中,在每个周期的曝光过程中,光学掩膜板的指定图案(单元图案)位于透光区,如图7或图8、图10所示,可以包括以下步骤:For example, in the method of fabricating an optical mask substrate provided by at least one embodiment of the present disclosure, during each period of exposure, a specified pattern (unit pattern) of the optical mask is located in the light transmissive region, as shown in FIG. 7 or 8. As shown in FIG. 10, the following steps may be included:
S1,采用遮挡件500和具有该单元图案的光学掩膜板400,在待曝光基板600上形成当前周期的曝光区域601;S1, using a shutter 500 and an optical mask 400 having the unit pattern, forming an exposure region 601 of the current period on the substrate 600 to be exposed;
S2,对当前周期的曝光区域601进行曝光。S2, exposing the exposure area 601 of the current cycle.
例如,在本公开至少一个实施例提供的光学掩膜基板的制备方法中,利用光学掩膜板400,通过不同次数曝光,在待曝光基板600上形成不同的待曝光图案,从而得到不同的光学掩膜基板200。For example, in the method for fabricating an optical mask substrate provided by at least one embodiment of the present disclosure, different exposure modes are used to form different patterns to be exposed on the substrate to be exposed 600 by using the optical mask 400, thereby obtaining different optics. Mask substrate 200.
例如,在本公开至少一个实施例提供的光学掩膜基板的制备方法中,在每个周期的曝光过程中,完成步骤S2后,制备方法还可以包括:For example, in the method for preparing an optical mask substrate provided by at least one embodiment of the present disclosure, after the step S2 is completed during the exposure process of each cycle, the preparation method may further include:
判断待曝光基板600上已曝光的各曝光区域601是否能够拼接出待曝光图案;若是,结束周期性的曝光;若否,进行下一个周期的曝光。其中,如图7或图8、图10所示,光学掩膜板400的指定图案(单元图案)位于透光区。It is judged whether each exposed area 601 on the substrate to be exposed 600 can be spliced out of the pattern to be exposed; if so, the periodic exposure is ended; if not, the exposure of the next period is performed. Here, as shown in FIG. 7 or FIG. 8 and FIG. 10, the designated pattern (unit pattern) of the optical mask 400 is located in the light transmitting region.
例如,在本公开一些实施例中,在光学掩膜板的指定图案(单元图案)位于遮光区的情况下,判断待曝光基板上的各曝光区域之外的区域(即未被曝光的区域)是否能够拼接出目标图案,若是,结束周期性的曝光,若否,进行下一个周期的曝光。For example, in some embodiments of the present disclosure, in a case where a specified pattern (unit pattern) of the optical mask is located in the light-shielding region, an area other than each exposed area on the substrate to be exposed (ie, an area that is not exposed) is determined. Whether the target pattern can be spliced, and if so, the periodic exposure is ended, and if not, the exposure of the next cycle is performed.
例如,在本公开一些实施例中,在透光区具有指定图案的情况下,在完成每周期的曝光或者完成所有周期的曝光之后,进行显影,该方式可以参见图7和图8所示的实施例。例如,在本公开另一些实施例中,在遮光区具有指定图案的情况下,在完成所有周期的曝光之后,进行显影,该方式可以参见图9所示的实施例。For example, in some embodiments of the present disclosure, in the case where the light-transmitting region has a prescribed pattern, development is performed after completion of exposure per cycle or completion of exposure of all cycles, which can be seen in FIGS. 7 and 8 Example. For example, in other embodiments of the present disclosure, in the case where the light-shielding region has a prescribed pattern, development is performed after all periods of exposure have been completed, which can be seen in the embodiment shown in FIG.
例如,在本公开一些实施例提供的光学掩膜基板的制备方法中,上述的步骤S1可以包括:For example, in the method for fabricating an optical mask substrate provided by some embodiments of the present disclosure, the foregoing step S1 may include:
采用遮挡件500对光学掩膜板400进行遮挡,在光学掩膜板400上形成具有单元图案的实际透光区423;将形成实际透光区423的光学掩膜板400和遮挡件500整体移动至当前指定位置、或整体移动至当前指定位置且旋转至当前指定角度,在待曝光基板600上确定出与移动、或移动且旋转后的实际透光区423正对的当前周期的曝光区域601。其中,光学掩膜板400的指定图案(单元图案)位于透光区。The optical mask 400 is shielded by the shielding member 500, and the actual light transmitting region 423 having the unit pattern is formed on the optical mask 400; the optical mask 400 and the shutter 500 forming the actual light transmitting region 423 are integrally moved. The exposure area 601 of the current period that is opposite to the actual light transmission area 423 that is moved, or moved and rotated, is determined on the substrate to be exposed 600 to the current designated position, or moved to the current specified position as a whole and rotated to the current specified angle. . Wherein, the specified pattern (unit pattern) of the optical mask 400 is located in the light transmitting region.
需要说明的是,在本公开至少一个实施例中,在光学掩膜板的指定图案(单元图案)位于遮光区的情况下,上述的步骤S1可以包括:采用遮挡件对光学掩膜板进行遮挡,在光学掩膜板上形成具有单元图案的实际遮光区;将形成实际遮光区的光学掩膜板和遮挡件整体移动至当前指定位置、或整体移动至当前指定位置且旋转至当前指定角度,在待曝光基板确定出与移动、或移动且旋转后的实际遮光区之外的区域正对的当前周期的曝光区域。It should be noted that, in at least one embodiment of the present disclosure, in a case where a specified pattern (unit pattern) of the optical mask is located in the light shielding region, the step S1 may include: blocking the optical mask with the shielding member. Forming an actual light-shielding region having a unit pattern on the optical mask; moving the optical mask and the shutter forming the actual light-shielding region as a whole to the current designated position, or moving integrally to the current designated position and rotating to the current specified angle, The exposed area of the current period facing the area outside the actual light-shielding area after moving, or moving and rotating, is determined on the substrate to be exposed.
例如,在本公开另一些实施例提供的光学掩膜基板的制备方法中,步骤S1可以包括:For example, in the method for preparing an optical mask substrate provided by other embodiments of the present disclosure, step S1 may include:
将光学掩膜板400移动至模待曝光基板600上的当前指定位置,或者将该光学掩膜板400移动至当前指定位置且将该光学掩膜板400旋转至当前指定角度;移动遮挡件500对经移动、或移动且旋转后的光学掩膜板400进行遮挡,在该光学掩膜板400上形成具有移动、或移动且旋转后的单元图案的实际透光区423;在待曝光基板600上确定出与移动、或移动且旋转后的实际透光区423正对的当前周期的曝光区域601。其中,光学掩膜板400的指定图案(单元图案)位于透光区。Moving the optical mask 400 to the currently designated position on the mold substrate 600 to be exposed, or moving the optical mask 400 to the current designated position and rotating the optical mask 400 to the current specified angle; moving the shutter 500 The moving, or moving, and rotated optical mask 400 is shielded, and an actual light transmitting region 423 having a moving, or moving, and rotated unit pattern is formed on the optical mask 400; The exposure area 601 of the current period that is opposite to the actual light transmission area 423 that is moved, or moved and rotated, is determined. Wherein, the specified pattern (unit pattern) of the optical mask 400 is located in the light transmitting region.
需要说明的是,在本公开至少一个实施例中,在光学掩膜板的指定图案(单元图案)位于遮光区的情况下,步骤S1可以包括:将光学掩膜板移动至模待曝光基板上的当前指定位置,或者将该光学掩膜板移动至当前指定位置且将该光学掩膜板旋转至当前指定角度;移动遮挡件对经移动、或移动且旋转后的光学掩膜板进行遮挡,在该光学掩膜板上形成具有移动、或移动且旋转后的单元图案的实际遮光区;在待曝光基板上确定出与移动、或移动且旋转后的实际遮光区之外的区域正对的当前周期的曝光区域。It should be noted that, in at least one embodiment of the present disclosure, in a case where a specified pattern (unit pattern) of the optical mask is located in the light shielding region, step S1 may include: moving the optical mask onto the substrate to be exposed The current specified position, or move the optical mask to the current designated position and rotate the optical mask to the current specified angle; the moving shutter occludes the moved, moved, and rotated optical mask, Forming an actual light-shielding region having a moving, or moving, and rotated unit pattern on the optical mask; determining, on the substrate to be exposed, a region other than the actual light-shielding region after moving, or moving and rotating The exposure area of the current cycle.
例如,在本公开至少一个实施例中,对光学掩膜板400和遮挡件500的移动和旋转、以及曝光过程均可由曝光机来完成。For example, in at least one embodiment of the present disclosure, the movement and rotation of the optical mask 400 and the shutter 500, as well as the exposure process, can all be performed by an exposure machine.
例如,在本公开至少一个实施例中,对遮挡件的数量不作限制,遮挡件可以设置为一个、两个或任意多个,遮挡件500的数量越多,对遮挡区域的调整越灵活,但当数量过多时,移动遮挡件500的工作量也较大,因此在实际生产中,可视具体需求选择合适数量的遮挡件500进行遮挡操作。For example, in at least one embodiment of the present disclosure, the number of the shielding members is not limited, and the shielding members may be disposed in one, two or any number. The more the shielding members 500, the more flexible the adjustment of the shielding area is, but When the number is too large, the workload of the moving shutter 500 is also large. Therefore, in actual production, an appropriate number of shutters 500 can be selected for the occlusion operation according to specific needs.
例如,在本公开至少一个实施例中,对遮挡件的形状和尺寸均不做限定,遮挡件可以采用矩形,也可以采用三角形、圆形等其它形状,以实现灵活调整遮挡区域,在实际生产中,可视具体需求以及曝光机的特性而定。For example, in at least one embodiment of the present disclosure, the shape and size of the shielding member are not limited. The shielding member may adopt a rectangular shape, and may also adopt other shapes such as a triangle, a circle, etc., to realize flexible adjustment of the shielding area, in actual production. In the case, depending on the specific needs and the characteristics of the exposure machine.
下面,以指定图案为圆角矩形的光学掩膜板400(如图3A所示)为例,对光学掩膜基板的制备方法作进一步说明。Next, a method for preparing an optical mask substrate will be further described by taking an optical mask 400 (shown in FIG. 3A) having a designated pattern as a rounded rectangle as an example.
在本公开实施例的一个示例中,基于如图3A所示的具有圆角矩形遮光区410的光学掩膜板400,通过8次曝光可制备具有第一种待曝光图案的第一种光学掩膜基板200,该第一种待曝光图案为两个圆角矩形,其中每个圆角矩形的尺寸均大于光学掩膜板400中圆角矩形的尺寸,制备过程可以如图7所示。In one example of an embodiment of the present disclosure, based on the optical mask 400 having a rounded rectangular light-shielding region 410 as shown in FIG. 3A, the first optical mask having the first pattern to be exposed can be prepared by 8 exposures. The film substrate 200, the first pattern to be exposed is two rounded rectangles, wherein the size of each rounded rectangle is larger than the size of the rounded rectangle in the optical mask 400, and the preparation process can be as shown in FIG. 7.
在制备第一种光学掩膜基板200的过程中,首先确定出能够拼接成该第一待曝光图案的第一单元图案;然后基于该第一单元图案周期性地对待曝光膜板进行曝光,直到在待曝光基板600上形成待曝光图案,从而得到第一种光学掩膜基板200。In the process of preparing the first type of optical mask substrate 200, first determining a first unit pattern that can be spliced into the first pattern to be exposed; and then periodically exposing the film to be exposed based on the first unit pattern until A pattern to be exposed is formed on the substrate 600 to be exposed, thereby obtaining a first type of optical mask substrate 200.
在周期性曝光过程中,每个周期的曝光过程可以相似。以第1个周期为例,在第1个周期的曝光过程中:During the periodic exposure process, the exposure process for each cycle can be similar. Taking the first cycle as an example, during the exposure of the first cycle:
用遮挡件500对光学掩膜板400进行遮挡,在该光学掩膜板400上形成具有该第一单元图案的第一实际透光区423,即,指定图案的透光区中未被遮挡件500遮挡的部分为第一实际透光区423;将形成第一实际透光区423的光学掩膜板400和遮挡件500整体移动至待曝光基板600上的当前指定位置,在待曝光膜板上确定出第一曝光区域601;对上述第一曝光区域601进行曝光,曝光后经判断可知,仅有的一个第一曝光区域601无法拼接出第一种待曝光图案,因此继续进行下一个周期的曝光。在完成第8个周期的曝光后,经判断可知已曝光的8个第一曝光区域601能够拼接出第一种待曝光图案,此时曝光结束。The optical mask 400 is shielded by the shielding member 500, and the first actual light transmitting region 423 having the first unit pattern is formed on the optical mask 400, that is, the unmasked portion of the transparent region of the designated pattern The portion blocked by 500 is the first actual light transmitting region 423; the optical mask 400 and the shutter 500 forming the first actual light transmitting region 423 are integrally moved to the current designated position on the substrate 600 to be exposed, and the film to be exposed is The first exposure area 601 is determined; the first exposure area 601 is exposed, and after the exposure, it is judged that only one first exposure area 601 cannot splicing the first pattern to be exposed, so the next cycle is continued. Exposure. After the exposure of the eighth cycle is completed, it is judged that the eight first exposure regions 601 that have been exposed can splicing out the first pattern to be exposed, and the exposure ends.
在本公开实施例的另一个示例中,基于如图3A所示的具有圆角矩形遮光区410的光学掩膜板400,通过16次曝光可制备具有第二种待曝光图 案的第二种光学掩膜基板200,该第二种待曝光图案包括四个圆角矩形,其中每个圆角矩形的尺寸均小于该光学掩膜板400中圆角矩形的尺寸,其制备过程如图8所示。In another example of an embodiment of the present disclosure, a second optical having a second pattern to be exposed can be prepared by 16 exposures based on the optical mask 400 having a rounded rectangular light-shielding region 410 as shown in FIG. 3A. The mask substrate 200, the second pattern to be exposed includes four rounded rectangles, wherein the size of each rounded rectangle is smaller than the size of the rounded rectangle in the optical mask 400, and the preparation process is as shown in FIG. .
在制备第二种光学掩膜基板200的过程中,首先确定出能够拼接成该第二待曝光图案的第二单元图案,确定出的第二单元图案由图8所示;然后基于该第二单元图案周期性地对待曝光膜板进行曝光,直到在待曝光基板600上形成待曝光图案,从而得到第二种光学掩膜基板200。In the process of preparing the second optical mask substrate 200, first determining a second unit pattern that can be spliced into the second pattern to be exposed, the determined second unit pattern is as shown in FIG. 8; and then based on the second The unit pattern is periodically exposed to the exposure film until a pattern to be exposed is formed on the substrate 600 to be exposed, thereby obtaining the second optical mask substrate 200.
在周期性曝光过程中,每个周期的曝光过程可以相似。以第1个周期为例,在第1个周期的曝光过程中:用遮挡件500对光学掩膜板400进行遮挡,在该光学掩膜板400上形成具有该第二单元图案的第二实际透光区423,即,指定图案的透光区中未被遮挡件500遮挡的部分为第二实际透光区423;将形成第二实际透光区423的光学掩膜板400和遮挡件500整体移动至待曝光基板600上的当前指定位置,在待曝光膜板上确定出第二曝光区域601;对上述第二曝光区域601进行曝光,曝光后经判断可知,仅有的一个第二曝光区域601无法拼接出第二种待曝光图案,因此继续进行下一个周期的曝光。在完成第16个周期的曝光后,经判断可知已曝光的16个第二曝光区域601能够拼接出第二种待曝光图案,此时曝光结束。During the periodic exposure process, the exposure process for each cycle can be similar. Taking the first period as an example, during the exposure of the first period: the optical mask 400 is shielded by the shutter 500, and the second actual pattern having the second unit pattern is formed on the optical mask 400. The light-transmitting region 423, that is, the portion of the light-transmitting region of the designated pattern that is not blocked by the shutter 500 is the second actual light-transmitting region 423; the optical mask 400 and the shutter 500 that will form the second actual light-transmitting region 423 Moving to the current designated position on the substrate to be exposed 600, determining the second exposure area 601 on the film to be exposed; exposing the second exposure area 601, after the exposure, it is judged that only one second exposure The area 601 cannot splicing out the second pattern to be exposed, so the exposure of the next cycle is continued. After the exposure of the 16th cycle is completed, it is judged that the exposed 16 second exposure regions 601 can splicing out the second pattern to be exposed, and the exposure ends.
例如,在本公开至少一个实施例提供的光学掩膜基板的制备方法中,在每个周期的曝光过程中,光学掩膜板的指定图案(单元图案)位于遮光区,如图9和图10所示,可以包括以下步骤:For example, in the method of fabricating an optical mask substrate provided by at least one embodiment of the present disclosure, a specified pattern (unit pattern) of the optical mask is located in the light-shielding region during each period of exposure, as shown in FIGS. 9 and 10. As shown, the following steps can be included:
S1,采用遮挡件500和具有该单元图案的光学掩膜板(未示出,包括实际遮光区423a),在待曝光基板600a上形成当前周期的曝光区域(未被遮挡件500遮挡且对应光学掩膜板的实际遮光区423a之外的区域)。S1, using a shutter 500 and an optical mask having the unit pattern (not shown, including the actual light-shielding region 423a), forming an exposure region of the current period on the substrate to be exposed 600a (not blocked by the shutter 500 and corresponding to the optical The area outside the actual shading area 423a of the mask).
S2,对当前周期的曝光区域601a进行曝光,即,在曝光过程中,对于待曝光基板600a的未被遮挡件500遮挡的区域,该区域的与实际遮光区423a对应的部分没有被曝光,该没有被曝光的区域601a对应待形成目标图案的子图案。S2, exposing the exposure region 601a of the current period, that is, the portion of the region corresponding to the actual light-shielding region 423a is not exposed to the region of the substrate 600a to be exposed that is not blocked by the shutter 500 during the exposure process, The area 601a that is not exposed corresponds to the sub-pattern in which the target pattern is to be formed.
重复进行上述过程,如图9所示,在每个曝光过程中,除待曝光的区域之外,其它的区域都用遮挡件500进行遮挡。如此,在完成所有周期的曝光之后,再对待曝光基板600a上的光刻胶(例如负性光刻胶)进行显影,光刻胶没有被曝光的区域(例如区域601a)在显影之后被去除,以剩余的 光刻胶为掩膜进行构图(例如湿刻),获得具有目标图案的光学掩膜基板(例如图9的第八周期示出的光学掩膜基板)。The above process is repeated, as shown in Fig. 9, in each exposure process, except for the area to be exposed, the other areas are shielded by the shutter 500. Thus, after the exposure of all the cycles is completed, the photoresist (for example, a negative photoresist) on the exposed substrate 600a is developed, and the region where the photoresist is not exposed (for example, the region 601a) is removed after development. Patterning (for example, wet etching) using the remaining photoresist as a mask, an optical mask substrate having a target pattern (for example, an optical mask substrate shown in the eighth cycle of FIG. 9) is obtained.
在本公开至少一个实施例提供的基于光学掩膜板的光学掩膜基板的制备方法中,任意一种具有指定图案的光学掩膜板,可通过多次曝光以及不同次数的曝光,来制备具有任意待曝光图案的光学掩膜基板;该方法通用性较强,可大大降低生产成本,减少生产资源的浪费。In the method for preparing an optical mask substrate based optical mask substrate provided by at least one embodiment of the present disclosure, any one of the optical masks having the specified pattern can be prepared by multiple exposures and different times of exposure. The optical mask substrate of any pattern to be exposed; the method has strong versatility, can greatly reduce the production cost, and reduce the waste of production resources.
本发明的实施例与现有技术相比,至少具有如下有益效果:Compared with the prior art, the embodiment of the present invention has at least the following beneficial effects:
(1)提供了至少一种具有指定图案的光学掩膜板,任意一种光学掩膜板均可用于制备至少两种不同的光学掩膜基板,以供制备不同的产品,增加光学掩膜板在产品间的通用性,大大降低成本;(1) Providing at least one optical mask having a specified pattern, any of which may be used to prepare at least two different optical mask substrates for preparing different products, adding optical masks The versatility between products greatly reduces costs;
(2)基于本发明实施例提供的具有指定图案的光学掩膜板,通过周期性的曝光过程,来制备具有不同待曝光图案的光学掩膜基板,以满足制备不同产品的需求,可大大降低生产成本,减少生产资源的浪费。(2) Based on the optical mask having the specified pattern provided by the embodiment of the present invention, an optical mask substrate having different patterns to be exposed is prepared by a periodic exposure process to meet the demand for preparing different products, which can be greatly reduced. Production costs, reducing waste of production resources.
对于本公开,还有以下几点需要说明:For the present disclosure, the following points need to be explained:
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构,其他结构可参考通常设计。(1) The drawings of the embodiments of the present disclosure relate only to the structures related to the embodiments of the present disclosure, and other structures can be referred to the general design.
(2)为了清晰起见,在用于描述本公开的实施例的附图中,层或区域的厚度被放大或缩小,即这些附图并非按照实际的比例绘制。(2) For the sake of clarity, in the drawings for describing embodiments of the present disclosure, the thickness of layers or regions is enlarged or reduced, that is, the drawings are not drawn to actual scales.
(3)在不冲突的情况下,本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。(3) In the case of no conflict, the embodiments of the present disclosure and the features in the embodiments may be combined with each other to obtain a new embodiment.
以上,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,本公开的保护范围应以权利要求的保护范围为准。The above is only the specific embodiment of the present disclosure, but the scope of the present disclosure is not limited thereto, and the scope of protection of the present disclosure is subject to the scope of protection of the claims.

Claims (16)

  1. 一种光学掩膜板,包括:An optical mask comprising:
    透光区和遮光区;Light transmissive area and shading area;
    其中,所述透光区和所述遮光区之一具有指定图案,所述指定图案包括至少一个单元图案,所述单元图案设置为可拼接以形成至少两种目标图案。Wherein one of the light transmitting region and the light shielding region has a designated pattern, and the specified pattern includes at least one unit pattern, and the unit pattern is configured to be spliced to form at least two target patterns.
  2. 根据权利要求1所述的光学掩膜板,其中,The optical mask according to claim 1, wherein
    所述指定图案和所述目标图案的大小不同。The specified pattern and the target pattern are different in size.
  3. 根据权利要求1或2所述的光学掩膜板,其中,The optical mask according to claim 1 or 2, wherein
    所述指定图案和所述目标图案的形状不同。The specified pattern and the shape of the target pattern are different.
  4. 根据权利要求1-3任一所述的光学掩膜板,其中,The optical mask according to any one of claims 1 to 3, wherein
    所述指定图案包括至少两个不同类型的所述单元图案,所述目标图案由两种以上的单元图案拼接而成。The specified pattern includes at least two different types of the unit patterns, and the target patterns are formed by splicing two or more unit patterns.
  5. 根据权利要求1-4任一所述的光学掩膜板,其中,The optical mask according to any one of claims 1 to 4, wherein
    所述指定图案包括矩形、井字形和十字形至少之一。The specified pattern includes at least one of a rectangle, a cross, and a cross.
  6. 根据权利要求5所述的光学掩膜板,其中,The optical mask according to claim 5, wherein
    所述矩形为圆角矩形;或者The rectangle is a rounded rectangle; or
    所述井字形包括两个沿第一方向的第一条形部分和两个沿第二方向的第二条形部分,每个所述第一条形部分与两个所述第二条形部分都相交叉,至少一个交叉处的拐角呈圆角,所述第一方向与所述第二方向相垂直;或者The well pattern includes two first strip portions in a first direction and two second strip portions in a second direction, each of the first strip portions and two of the second strip portions All intersecting, at least one corner of the intersection is rounded, the first direction being perpendicular to the second direction; or
    所述十字形包括一个沿第一方向的第一条形部分和一个沿第二方向的第二条形部分,所述第一条形部分和所述第二条形部分相交叉,交叉处的拐角呈圆角,所述第一方向与所述第二方向垂直。The cross shape includes a first strip portion in a first direction and a second strip portion in a second direction, the first strip portion and the second strip portion intersecting at an intersection The corner is rounded, and the first direction is perpendicular to the second direction.
  7. 根据权利要求6所述的光学掩膜板,其中,The optical mask according to claim 6, wherein
    所述圆角矩形、井字形或十字形中包括所述单元图案。The unit pattern is included in the rounded rectangle, the cross or the cross.
  8. 根据权利要求7所述的光学掩膜板,其中,The optical mask according to claim 7, wherein
    所述单元图案为L形,所述L形的单元图案包括端点相交的沿不同方向的第一条状部和第二条状部。The unit pattern is L-shaped, and the L-shaped unit pattern includes first strips and second strips that intersect at different ends in different directions.
  9. 根据权利要求8所述的光学掩膜板,其中,The optical mask according to claim 8, wherein
    所述第一条状部和所述第二条状部相交处的拐角呈圆角。A corner of the intersection of the first strip and the second strip is rounded.
  10. 根据权利要求8或9所述的光学掩膜板,其中,The optical mask according to claim 8 or 9, wherein
    所述第一条状部和所述第二条状部为透明条状部或者非透明条状部。The first strip portion and the second strip portion are transparent strip portions or non-transparent strip portions.
  11. 一种基于权利要求1-10中任一项所述的光学掩膜板的光学掩膜基板的制备方法,包括:A method of preparing an optical mask substrate according to any one of claims 1 to 10, comprising:
    确定出用以拼接出目标图案的所述单元图案,基于所述单元图案周期性地对待曝光基板进行曝光,直到在所述待曝光基板上形成所述目标图案,得到所述光学掩膜基板。Determining the unit pattern for splicing out the target pattern, and periodically exposing the substrate to be exposed based on the unit pattern until the target pattern is formed on the substrate to be exposed, to obtain the optical mask substrate.
  12. 根据权利要求11所述的方法,其中,The method of claim 11 wherein
    在每个周期的曝光过程中,采用遮挡件和所述光学掩膜板,在所述待曝光基板上确定出当前周期的曝光区域;During each period of exposure, a masking member and the optical mask are used to determine an exposure region of the current period on the substrate to be exposed;
    对所述当前周期的曝光区域进行曝光。The exposure area of the current period is exposed.
  13. 根据权利要求12所述的方法,其中,在每个周期的曝光过程中,所述对所述当前周期的曝光区域进行曝光之后,还包括:The method according to claim 12, wherein after exposing the exposed area of the current period during the exposure of each period, the method further comprises:
    所述透光区具有所述指定图案,判断所述待曝光基板上已曝光的各曝光区域是否能够拼接出所述目标图案,若是,结束周期性的曝光,若否,进行下一个周期的曝光;或者The light transmissive area has the specified pattern, and it is determined whether each exposed area on the substrate to be exposed can be spliced out of the target pattern, and if so, the periodic exposure is ended, and if not, the exposure is performed in the next cycle. ;or
    所述遮光区具有所述指定图案,判断所述待曝光基板上的各曝光区域之外的区域是否能够拼接出所述目标图案,若是,结束周期性的曝光,若否,进行下一个周期的曝光。The light-shielding area has the specified pattern, and it is determined whether a region other than each exposed area on the substrate to be exposed can be spliced out of the target pattern, and if so, the periodic exposure is ended, and if not, the next cycle is performed. exposure.
  14. 根据权利要求13所述的方法,其中,The method of claim 13 wherein
    所述透光区具有所述指定图案,在完成每周期的曝光或者完成所有周期的曝光之后,进行显影;或者The light transmissive region has the specified pattern, and is developed after completing the exposure of each cycle or completing the exposure of all cycles; or
    所述遮光区具有所述指定图案,在完成所有周期的曝光之后,进行显影。The opaque area has the specified pattern, and development is performed after all periods of exposure have been completed.
  15. 根据权利要求12-14任一所述的方法,其中,所述在所述待曝光基板上确定出当前周期的曝光区域包括:The method according to any one of claims 12-14, wherein the determining an exposure region of the current period on the substrate to be exposed comprises:
    采用所述遮挡件对所述光学掩膜板进行遮挡,在所述光学掩膜板上形成具有所述单元图案的实际透光区或实际遮光区;Blocking the optical mask with the shielding member, forming an actual light-transmissive region or an actual light-shielding region having the unit pattern on the optical mask;
    将形成所述实际透光区或实际遮光区的所述光学掩膜板和所述遮挡件整体移动至当前指定位置、或整体移动至当前指定位置且旋转至当前指 定角度,在所述待曝光基板上确定出与移动、或移动且旋转后的所述实际透光区或实际遮光区之外的区域正对的当前曝光区域。Moving the optical mask and the shutter forming the actual light-transmissive area or the actual light-shielding area to the current designated position as a whole, or moving to the current designated position as a whole and rotating to the current specified angle, in the to-be-exposure A current exposure area that is opposite to the area of the actual light-transmissive area or the actual light-shielding area that is moved, or moved and rotated, is determined on the substrate.
  16. 根据权利要求12-14任一所述的方法,其中,所述在所述待曝光基板上确定出当前周期的曝光区域包括:The method according to any one of claims 12-14, wherein the determining an exposure region of the current period on the substrate to be exposed comprises:
    将所述光学掩膜板移动至所述模待曝光基板上的当前指定位置,或者将所述光学掩膜板移动至所述待曝光基板上的当前指定位置且将所述光学掩膜板旋转至当前指定角度;Moving the optical mask to a current designated position on the mold substrate to be exposed, or moving the optical mask to a current designated position on the substrate to be exposed and rotating the optical mask To the current specified angle;
    移动所述遮挡件对移动、或移动且旋转后的所述光学掩膜板进行遮挡,在该光学掩膜板上形成具有移动、或移动且旋转后的所述单元图案的实际透光区或实际遮光区,在所述待曝光基板上确定出与移动、或移动且旋转后的所述实际透光区或所述实际遮光区之外的区域正对的当前曝光区域。Moving the shutter to block the moving, or moving, and rotating optical mask panel, forming an actual light transmissive area of the unit pattern having a moving, or moving, and rotating shape on the optical mask sheet or The actual light-shielding area determines a current exposure area that is opposite to the actual light-transmissive area or the area other than the actual light-shielding area that is moved, or moved and rotated, on the substrate to be exposed.
PCT/CN2019/079670 2018-03-26 2019-03-26 Optical mask plate, and method for preparing optical mask substrate based on optical mask plate WO2019184908A1 (en)

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