WO2019179083A1 - 一种高效检测大面积微细电子器件的方法 - Google Patents

一种高效检测大面积微细电子器件的方法 Download PDF

Info

Publication number
WO2019179083A1
WO2019179083A1 PCT/CN2018/110445 CN2018110445W WO2019179083A1 WO 2019179083 A1 WO2019179083 A1 WO 2019179083A1 CN 2018110445 W CN2018110445 W CN 2018110445W WO 2019179083 A1 WO2019179083 A1 WO 2019179083A1
Authority
WO
WIPO (PCT)
Prior art keywords
electronic device
light
efficiently detecting
control module
reflected
Prior art date
Application number
PCT/CN2018/110445
Other languages
English (en)
French (fr)
Inventor
钟祎洵
姚日晖
宁洪龙
魏靖林
Original Assignee
华南理工大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华南理工大学 filed Critical 华南理工大学
Publication of WO2019179083A1 publication Critical patent/WO2019179083A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • G01B11/161—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by interferometric means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
    • G01N21/45—Refractivity; Phase-affecting properties, e.g. optical path length using interferometric methods; using Schlieren methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95638—Inspecting patterns on the surface of objects for PCB's

Definitions

  • the invention belongs to the technical field of electronic device detection, and particularly relates to a method for efficiently detecting large-area microelectronic devices.
  • defect detection is mainly divided into static passive state detection and dynamic real-time active state detection; the detection implementation is divided into contact detection and non-contact detection.
  • the detection of the impact of the sample is divided into destructive testing and non-destructive testing.
  • non-contact non-destructive testing can ensure the integrity and stability of the object to be tested.
  • an object of the present invention to provide a method for efficiently detecting large area microelectronic devices.
  • the method is based on the external surface of the damage of the object structure, which will produce non-uniform surface displacement or deformation under the action of static load or dynamic load. In the regular interference fringes, obvious irregularities such as discontinuous and abrupt shapes will occur. Changes in variation and spacing, etc.; by measuring these small changes, the internal defects of the object and their locations can be ascertained.
  • a method for efficiently detecting large-area microelectronic devices includes the following steps:
  • step (1) dividing the light beam of the specific frequency in step (1) into the coherent light of the same frequency and the like through the spectroscopic interference optical module B, one beam is reflected by the surface of the electronic device under test, and the other beam is reflected by the mirror to reflect the two beams.
  • Light produces interference
  • step (3) The tested electronic device of step (2) performs control of the test condition through the sample control module C;
  • the interference pattern generated in the step (2) is received by the data acquisition and analysis module D, and analyzed by using computer software.
  • the light source control module A described in the step (1) generates light of a specific frequency for generating coherent light according to the detection requirement
  • the device used includes a laser, an adjustable frequency LED or other high-stability light source, which can generate a specific frequency beam. instrument.
  • the spectroscopic interference optical module B described in the step (2) includes a beam splitter B1, a beam splitter B2, a mirror M, a beam expander L1, and an imaging lens L2.
  • the beam splitter B1 is used to split the light beam emitted from the light source of the light source control module A into coherent light of a phase such as equal frequency.
  • the mirror M is used to reflect a beam of light emitted by the beam splitter B1 to interfere with light reflected from the surface of the electronic device under test.
  • the beam expander L1 is used for expanding a beam of light emitted from the beam splitter B1 for projecting on the surface of the electronic device to be tested, causing it to illuminate the surface of the electronic device under test to generate reflection, and the other for passing the The beam of the mirror M is expanded and projected onto another beam splitter B2.
  • the imaging lens L2 is used to concentrate the light reflected by the surface of the electronic device under test.
  • sample control module C described in the step (3) is composed of a heat source, an electric signal source or other at least one control platform that changes the state of the object to be tested and is in a working or non-working state such as temperature change and current change. composition.
  • the data acquisition and analysis module D described in the step (4) is used for collecting the interference pattern and performing mathematical analysis with the relevant software.
  • the method of the invention can realize real-time detection and data collection and processing of different states of an object, a control module of the object to be tested, real-time monitoring of collection of temperature and deformation information of the device under passive or active conditions and other dynamic conditions. analysis.
  • the method of the present invention can perform full field inspection of large-sized materials and devices, and realize efficient and accurate detection of large-area complex devices.
  • the method of the present invention can obtain high-precision wavelength level measurement results to achieve an effective analysis of device performance.
  • FIG. 1 is a schematic structural diagram of a detection system for efficiently detecting a large-area microelectronic device according to an embodiment of the present invention.
  • 2 to 4 are images of the surface interference fringe obtained by heating the alumina-copper direct bonded substrate to 100 ° C, 200 ° C and 300 ° C in the examples of the present invention, respectively.
  • Fig. 5 is a view showing the comparison of the positions of corresponding points on the surface of the alumina-copper direct bonding substrate before and after heating at 300 °C in the embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the principle of detecting a defect in a detection system according to an embodiment of the present invention.
  • FIG. 1 a method for efficiently detecting a large-area micro-electronic device is shown in FIG. 1 , which is composed of a light source control module A, a spectroscopic interference optical module B, a sample control module C, and a data acquisition and analysis module. D constitutes.
  • the spectroscopic interference optical module B is composed of a beam splitter B1, a beam splitter B2, a block mirror M, two beam expanders L1, and an imaging lens L2.
  • the sample control module is a quartz high-temperature heating furnace, and the large-area microelectronic device to be tested is an alumina-copper direct bonding substrate.
  • the specific detection method includes the following steps:
  • a light beam of a specific frequency is generated by the light source control module A.
  • Step (1) The light beam of a specific frequency is first divided into two beams of coherent light of the same frequency and the like by the beam splitter B1 of the spectroscopic interference optical module, and one beam is expanded by the beam expander L1 and then made.
  • the illumination is reflected on the surface of the electronic device under test; the other beam is reflected by the three mirrors M and then expanded into another beam expander L1 and projected onto the other beam splitter B2; the reflection on the surface of the electronic device under test
  • the light is concentrated by the imaging lens L2 and then interferes with the reflected light passing through the beam splitter B2.
  • step (3) The tested electronic device of step (2) is controlled by the sample control module C, and the alumina-copper direct bonding substrate is heated by using a quartz high temperature heating furnace, the heating rate is controllable, and the furnace is equipped with a temperature sensor for heating. The furnace is sealed with high temperature quartz glass.
  • the interference pattern generated in the step (2) is received by the data acquisition and analysis module D, and analyzed by using computer software.
  • 2, 3 and 4 are image interference fringe images of alumina-copper direct bonded substrates heated to 100 ° C, 200 ° C and 300 ° C, respectively.
  • the copper conductor layer has a certain uniform displacement with respect to the alumina ceramic layer during the heating process, but it occurs uniformly throughout the test plane, and there is no obvious stripe distortion, indicating that the heating process does not cause crack initiation and expansion of the interface, 300 Thermal shock below °C does not compromise the performance of the directly bonded substrate.
  • the relative displacement of the surface of the alumina-copper direct bonded substrate was measured at 300 °C.
  • the experimental conditions were as follows: an ambient temperature of 18 ° C, an incident angle of 45 degrees, and a wavelength of light waves of 0.6528 ⁇ m.
  • Figure 5 is a comparison of the positions of the corresponding points on the surface before and after heating. Through Fig. 5, we can also find that the substrate is uniformly deformed during heating, and has good thermal shock resistance.
  • the detection system of the embodiment can perform non-contact accurate defect detection on the device under test without damaging the device under test.
  • the schematic diagram of the defect detection is shown in Figure 6.
  • the beam of a specific frequency reaches the surface of the sample to be tested through the beam expander L1.
  • the beam reaches B2 through reflection, and merges with the beam reflected by the mirror M and then passes through the other beam expander to generate interference, in data acquisition and analysis.
  • a bright stripe is produced on the module D; in the position where the defect exists, the beam generated by L1 is scattered at the defect, and therefore, the reflected light at the position cannot be received at B2, and the interference of the beam is not generated, in the data acquisition and analysis module. Dark stripes are produced at D.

Abstract

一种高效检测大面积微细电子器件的方法，通过光源控制模块(A)产生特定频率的光束，通过分光干涉光学模块(B)分为等频率等相位的相干光，一束通过被测电子器件表面反射，另一束通过反射镜反射，使两束反射光产生干涉，测试过程被测电子器件通过样品控制模块(C)进行测试条件的控制，通过数据采集分析模块(D)接收产生的干涉图样，并利用计算机软件进行分析，该方法可以对大面积电子器件的表面及界面处微小形变进行非接触式测量，具有高精度、全场、实时、无损检测等优点。

Description

一种高效检测大面积微细电子器件的方法 技术领域
本发明属于电子器件检测技术领域，具体涉及一种高效检测大面积微细电子器件的方法。
背景技术
随着科学技术的进步及制造工艺的进一步提高，加工制造过程中不同尺寸的材料和器件的缺陷对性能有着很大的影响，如何快速、准确地对缺陷进行检测，保证制造良品率，提高精密加工制造业的进一步发展具有重要意义。
以面板显示产业为例，近年来，以TFT-LCD、AMOLED、电子纸为代表的新型显示(FPD)产业发展迅猛。随着面板显示技术的飞速发展，大尺寸面板的生产制造成为主流，行业专注于提升产品品质和降低成本。而在降低成本方面最有效、最直接的方式是提高产品良品率。检测产品良品率传统方法则采用人工作业，不仅工作量大，而且易受到检测人员主观因素的影响，人工视觉检测越来越不能满足当今工业领域的要求。
在实验室研究以及工厂化生产中，缺陷检测主要在检测内容上分为静态无源状态下的检测以及动态实时有源状态的检测；在检测实施方式上分为接触式检测以及非接触式检测；在检测对样品影响上分为破坏性检测以及无损检测。其中，非接触式无损检测能够保证待测物体的完整性及稳定性。
工业生产的进步进一步要求检测工艺的高效性及准确性，由于非接触无损检测的限制，现有技术包括射线、超声波、电磁、渗透和磁粉检测技术等，难以满足。
发明内容
针对以上现有技术存在的缺点和不足之处，本发明的目的在于提供一种高效检测大面积微细电子器件的方法。该方法基于物体结构损伤处的外表面在静载荷或动载荷的作用下会产生非均匀的表面位移或变形，在有规则的干涉条纹中会出现明显的异状，如不连续、突变的形状变化和间距变化等；通过测算这些微小的变化，便可查明物体内部缺陷及其位置。
本发明目的通过以下技术方案实现：
一种高效检测大面积微细电子器件的方法，包括如下步骤：
(1)通过光源控制模块A产生特定频率的光束；
(2)将步骤(1)特定频率的光束通过分光干涉光学模块B分为等频率等相位的相干光，一束通过被测电子器件表面反射，另一束通过反射镜反射，使两束反射光产生干涉；
(3)步骤(2)的被测电子器件通过样品控制模块C进行测试条件的控制；
(4)通过数据采集分析模块D接收步骤(2)产生的干涉图样，并利用计算机软件进行分析。
进一步地，步骤(1)中所述的光源控制模块A根据检测需要产生特定频率的光用于产生相干光，所用器件包括激光器、可调频LED或其他高稳定性光源等可产生特定频率光束的仪器。
进一步地，步骤(2)中所述的分光干涉光学模块B包括分光镜B1，分光镜B2，反射镜M，扩束镜L1和成像透镜L2。所述的分光镜B1用于将光源控制模块A的光源出射的光束分为等频率等相位的相干光。所述的反射镜M用于反射经分光镜B1出射的一束光使之与投射到被测电子器件表面反射的光产生干涉。所述的扩束镜L1一个用于将经分光镜B1出射的用于投射于被测电子器件表面的光束扩束，使之照射在被测电子器件表面上产生反射，另一个用于将经过反射镜M的光束扩束投射至另一分光镜B2上。所述的成像透镜L2用于将被测电子器件表面反射的光进行汇聚。
进一步地，步骤(3)中所述的样品调控模块C由热量源、电信号源或其他改变待测物状态，使之处于温度变化、电流变化等工作或非工作状态的至少一种控制平台组成。
进一步地，步骤(4)中所述的数据采集分析模块D用于对干涉图样进行采集并用相关软件进行数学分析。
本发明的方法具有如下优点及有益效果：
(1)本发明的方法可实现对物体不同状态的实时检测与数据收集处理，一个对被测物调控模块控制，实时监测无源或有源情况及其他动态情况下器件温度、形变信息的收集分析。
(2)本发明的方法能进行大尺寸材料及器件的全场检验，实现大面积复杂器件的高效准确检测。
(3)本发明的方法可得到高精度波长级别测量结果以实现对器件性能的有效分析。
附图说明
图1为本发明实施例的一种高效检测大面积微细电子器件方法的检测系统结构示意图。
图2～4分别是本发明实施例中对氧化铝-铜直接键合基板加热到100℃、200℃和300℃，检测所得表面干涉条纹图像。
图5为本发明实施例中300℃加热前后，氧化铝-铜直接键合基板的表面相对位移测试结果的表面各对应点位置对比图。
图6为本发明实施例的检测系统进行缺陷检测的原理示意图。
具体实施方式
下面结合实施例及附图对本发明作进一步详细的描述，但本发明的实施方式不限于此。
实施例
本实施例的一种高效检测大面积微细电子器件的方法，该方法的检测系统结构示意图如图1所示，由光源控制模块A、分光干涉光学模块B、样品控制模块C和数据采集分析模块D构成。所述分光干涉光学模块B由分光镜B1、分光镜B2、3块反射镜M，两个扩束镜L1和成像透镜L2构成。样品控制模块为石英高温加热炉，待测大面积微细电子器件为氧化铝-铜直接键合基板。
具体检测方法包括如下步骤：
(1)通过光源控制模块A产生特定频率的光束。
(2)步骤(1)特定频率的光束首先通过分光干涉光学模块的分光镜B1将光源出射的光束分为等频率等相位的两束相干光，一束通过扩束镜L1扩束后使之照射在被测电子器件表面上产生反射；另一束经过3块反射镜M反射后进入另一个扩束镜L1扩束后投射至另一分光镜B2上；被测电子器件表面上产生的反射光通过成像透镜L2进行汇聚，然后与经分光镜B2的反射光产生干涉。
(3)步骤(2)的被测电子器件通过样品控制模块C进行测试条件的控制，使用石英高温加热炉加热氧化铝-铜直接键合基板，升温速率可控，炉内装有温度传感器，加热炉采用高温石英玻璃进行密封。
(4)通过数据采集分析模块D接收步骤(2)产生的干涉图样，并利用计算机软件进行分析。
图2、图3和图4分别是氧化铝-铜直接键合基板加热到100℃、200℃和300℃的表面干涉条纹图像。我们发现在加热过程中铜导体层相对氧化铝陶瓷层有一定的均匀位移，但在整个测试平面上是均匀发生的，没有明显的条纹扭曲，说明加热过程没有导致界面的裂纹产生和扩展，300℃以下热冲击不会损害直接键合基板的性能。
对300℃下，氧化铝-铜直接键合基板的表面相对位移进行了测量。实验条件如下：环境温度18℃，入射角45度，光波的波长0.6528微米。图5为加热 前后表面各对应点位置对比图。通过图5，我们也可以发现基板在受热过程中，变形均匀，有良好的耐热冲击性能。
本实施例的检测系统可以在不损坏被测器件的前提下，对被测器件进行非接触式的精确缺陷检测。其缺陷检测的原理示意图如图6所示。特定频率的光束经扩束镜L1达到待测样品表面，在无缺陷处，光束经反射到达B2，与经过反射镜M反射后通过另一扩束镜的光束汇合，产生干涉，在数据采集分析模块D上产生明条纹；在存在缺陷的位置，L1产生的光束在缺陷处发生散射，因此，在B2处无法接受到该位置的反射光线，不会产生光束的干涉现象，在数据采集分析模块D处产生暗条纹。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，其它的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

Claims (9)

  1. 一种高效检测大面积微细电子器件的方法，其特征在于包括如下步骤：
    (1)通过光源控制模块A产生特定频率的光束；
    (2)将步骤(1)特定频率的光束通过分光干涉光学模块B分为等频率等相位的相干光，一束通过被测电子器件表面反射，另一束通过反射镜反射，使两束反射光产生干涉；
    (3)步骤(2)的被测电子器件通过样品控制模块C进行测试条件的控制；
    (4)通过数据采集分析模块D接收步骤(2)产生的干涉图样，并利用计算机软件进行分析。
  2. 根据权利要求1所述的一种高效检测大面积微细电子器件的方法，其特征在于：步骤(1)中所述的光源控制模块A包括激光器或可调频LED。
  3. 根据权利要求1所述的一种高效检测大面积微细电子器件的方法，其特征在于：步骤(2)中所述的分光干涉光学模块B包括分光镜B1，分光镜B2，反射镜M，扩束镜L1和成像透镜L2。
  4. 根据权利要求3所述的一种高效检测大面积微细电子器件的方法，其特征在于：所述的分光镜B1用于将光源控制模块A的光源出射的光束分为等频率等相位的相干光。
  5. 根据权利要求3所述的一种高效检测大面积微细电子器件的方法，其特征在于：所述的反射镜M用于反射经分光镜B1出射的一束光使之与投射到被测电子器件表面反射的光产生干涉。
  6. 根据权利要求3所述的一种高效检测大面积微细电子器件的方法，其特征在于：所述的扩束镜L1一个用于将经分光镜B1出射的用于投射于被测电子器件表面的光束扩束，使之照射在被测电子器件表面上产生反射，另一个用于将经过反射镜M的光束扩束投射至另一分光镜B2上。
  7. 根据权利要求3所述的一种高效检测大面积微细电子器件的方法，其特 征在于：所述的成像透镜L2用于将被测电子器件表面反射的光进行汇聚。
  8. 根据权利要求1所述的一种高效检测大面积微细电子器件的方法，其特征在于：步骤(3)中所述的样品调控模块C由热量源、电信号源中的至少一种控制平台组成。
  9. 根据权利要求1所述的一种高效检测大面积微细电子器件的方法，其特征在于：步骤(4)中所述的数据采集分析模块D用于对干涉图样进行采集并进行数学分析。
PCT/CN2018/110445 2018-03-19 2018-10-16 一种高效检测大面积微细电子器件的方法 WO2019179083A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810223036.4 2018-03-19
CN201810223036.4A CN108508019A (zh) 2018-03-19 2018-03-19 一种高效检测大面积微细电子器件的方法

Publications (1)

Publication Number Publication Date
WO2019179083A1 true WO2019179083A1 (zh) 2019-09-26

Family

ID=63376757

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/110445 WO2019179083A1 (zh) 2018-03-19 2018-10-16 一种高效检测大面积微细电子器件的方法

Country Status (2)

Country Link
CN (1) CN108508019A (zh)
WO (1) WO2019179083A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108508019A (zh) * 2018-03-19 2018-09-07 华南理工大学 一种高效检测大面积微细电子器件的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269048A (ja) * 1986-05-19 1987-11-21 Hitachi Electronics Eng Co Ltd プリント基板検査装置
CN103615993A (zh) * 2013-11-29 2014-03-05 天津大学 基于离轴显微干涉术的微结构测试系统及方法
CN106197257A (zh) * 2016-07-06 2016-12-07 中国科学院光电技术研究所 振幅相位联合调制超分辨三维微纳结构形貌测量装置
CN107193141A (zh) * 2017-07-18 2017-09-22 京东方科技集团股份有限公司 一种tft基板的检测装置及方法
CN108508019A (zh) * 2018-03-19 2018-09-07 华南理工大学 一种高效检测大面积微细电子器件的方法
CN208013103U (zh) * 2018-03-19 2018-10-26 华南理工大学 一种电子器件表面缺陷检测系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102914257A (zh) * 2012-09-29 2013-02-06 哈尔滨工程大学 分光同步移相干涉显微检测装置及检测方法
WO2016007950A1 (en) * 2014-07-11 2016-01-14 Vanderbilt Universtiy Apparatus and methods for probing a material as a function of depth using depth-dependent second harmonic generation
JP6410618B2 (ja) * 2015-01-19 2018-10-24 株式会社ニューフレアテクノロジー 欠陥検査装置
CN107688022A (zh) * 2016-08-04 2018-02-13 中国科学院长春光学精密机械与物理研究所 一种光学元件表面缺陷检测装置
KR102592917B1 (ko) * 2016-08-26 2023-10-23 삼성전자주식회사 표면 검사 방법 및 반도체 소자의 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269048A (ja) * 1986-05-19 1987-11-21 Hitachi Electronics Eng Co Ltd プリント基板検査装置
CN103615993A (zh) * 2013-11-29 2014-03-05 天津大学 基于离轴显微干涉术的微结构测试系统及方法
CN106197257A (zh) * 2016-07-06 2016-12-07 中国科学院光电技术研究所 振幅相位联合调制超分辨三维微纳结构形貌测量装置
CN107193141A (zh) * 2017-07-18 2017-09-22 京东方科技集团股份有限公司 一种tft基板的检测装置及方法
CN108508019A (zh) * 2018-03-19 2018-09-07 华南理工大学 一种高效检测大面积微细电子器件的方法
CN208013103U (zh) * 2018-03-19 2018-10-26 华南理工大学 一种电子器件表面缺陷检测系统

Also Published As

Publication number Publication date
CN108508019A (zh) 2018-09-07

Similar Documents

Publication Publication Date Title
TWI486550B (zh) 厚度線上即時檢測之光學干涉裝置及其方法
CN101832945A (zh) 镀膜玻璃薄膜缺陷在线检测方法与装置
CN203745385U (zh) 激光超声光学干涉检测装置
Wen et al. Crack detection in photovoltaic cells by interferometric analysis of electronic speckle patterns
WO2019042208A1 (zh) 光学测量系统及方法
WO2019179083A1 (zh) 一种高效检测大面积微细电子器件的方法
Akbari et al. Investigation of loading parameters in detection of internal cracks of composite material with digital shearography
WO2021227134A1 (zh) 吸收性缺陷单光束光热测量装置和测量方法
CN107543502B (zh) 即时检测全场厚度的光学装置
Jain et al. Extension of reflection-mode digital gradient sensing method for visualizing and quantifying transient deformations and damage in solids
CN208013103U (zh) 一种电子器件表面缺陷检测系统
Kim et al. Evaluation of subsurface defects in fiber glass composite plate using lock-in technique
Guo et al. Experimental investigation of a modified Beckmann–Kirchhoff scattering theory for the in-process optical measurement of surface quality
TWM552096U (zh) 光學薄膜殘留應力之測量裝置
Mingze et al. Current situation and development trend of aspheric optical surface defect detection technology
TWI434021B (zh) Non - contact optical composite measurement method and system
Wei et al. Research progress of stress measurement technologies for optical elements
TWM447494U (zh) 同時檢測薄膜之熱膨脹係數和雙軸模量之裝置
Yin et al. ESPI solution for defect detection in crystalline photovoltaic cells
Yuan et al. Detection of material surface cracks by infrared non-destructive testing
Schreiber et al. New polarization interferometry Approaches for In-situ Process Control and Product Quality Assessment
Meziane et al. Precision inspection of transparent component quality
CN116698917B (zh) 一种涂层缺陷的无损检测方法及系统
Chen et al. Development of a" turn-key" system for weak absorption measurement and analysis
Yuan et al. Dynamic Localization And Transient Profile Reconstruction Of Internal Defect Based On A Dual-Channel Speckle Interferometer

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18910313

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205 DATED 14/01/2021)

122 Ep: pct application non-entry in european phase

Ref document number: 18910313

Country of ref document: EP

Kind code of ref document: A1