WO2019178929A1 - 一种阵列基板的制备方法及其间隔件结构的制备方法 - Google Patents

一种阵列基板的制备方法及其间隔件结构的制备方法 Download PDF

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WO2019178929A1
WO2019178929A1 PCT/CN2018/087312 CN2018087312W WO2019178929A1 WO 2019178929 A1 WO2019178929 A1 WO 2019178929A1 CN 2018087312 W CN2018087312 W CN 2018087312W WO 2019178929 A1 WO2019178929 A1 WO 2019178929A1
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Prior art keywords
light
region
pad
stage
resin material
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PCT/CN2018/087312
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English (en)
French (fr)
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曹武
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/051,757 priority Critical patent/US10345660B1/en
Publication of WO2019178929A1 publication Critical patent/WO2019178929A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices

Definitions

  • the present invention relates to the field of display, and in particular to a method for preparing an array substrate and a method for preparing the structure of the spacer.
  • the BPS Black Photo Spacer
  • BM Black Matrix
  • PS Photo Spacer
  • FIG. 1 and FIG. 2 a schematic structural view of a conventional liquid crystal display fabricated by using BPS technology is shown.
  • the color resist layer 13' of the gate line region see the F' region in FIG. 1
  • the main spacer 130' and the secondary spacer 131' having different heights are respectively formed in the regions corresponding to the main spacer 140' and the secondary spacer 141', and the main spacer is obtained by the leveling effect after the BPS coating is performed.
  • the final surface step difference between 140' and secondary spacer 141' is
  • the final step difference between the primary spacer 140' and the secondary spacer 141' affects the safe range of the liquid crystal limit (LC Margin) in the process of forming the cartridge, thereby affecting the yield.
  • LC Margin liquid crystal limit
  • the technical problem to be solved by the present invention is to provide a method for preparing an array substrate and a method for preparing the spacer structure, which can increase the step difference between the main spacer and the sub-spacer and improve the flatness thereof, thereby improving the product quality. rate.
  • an aspect of an embodiment of the present invention provides a method for fabricating a spacer structure of an array substrate, including the steps of:
  • first pad stage Forming a plurality of first pad stages, a second pad stage, and a trench region between the first pad stage and the second pad stage in at least one region of the color resist layer of the array substrate;
  • the surface of the first pad stage is higher than the surface of the second pad stage;
  • Covering the photosensitive resin material with a photomask having a light transmissive region or a light shielding region covering the plurality of first pad carriers, second pad carriers, and trench regions, and corresponding to The second pad stage area is provided with a light transmission adjusting component;
  • the developed black photosensitive resin material is subjected to a high-temperature baking leveling treatment to fill at least a portion of the black photosensitive resin material of the secondary spacer into the grooves or valleys.
  • the method further includes depositing an insulating layer on the first pad stage, the second pad stage, and the trench.
  • the reticle when the photosensitive resin material is a negative photosensitive material, the reticle is provided with a light-transmissive area covering the plurality of first pad carriers, the second pad stage, and the groove region.
  • the light transmission adjusting member is a light blocking structure; or
  • the reticle is provided with a light shielding area covering the plurality of first pad carriers, the second pad stage, and the groove region, and the light transmission adjustment
  • the component is a light transmissive structure.
  • the light blocking structure disposed in the second pad stage area is an annular light bar disposed around the second stage area, the light bar width is less than 8um, and the light bar distance is The distance between the edges of the spacer is less than 4um; or
  • the light-transmitting structure disposed in the second pad stage region is an annular light-transmitting strip disposed around the second stage region, the light-transmitting strip width is less than 8um, and the light-transmitting strip is separated from the second The distance between the edges of the spacer is less than 4um.
  • the light blocking structure further includes: a plurality of linear dot matrix shading strips disposed in the second stage area, a length direction of each of the linear lattice shading strips and the etched processing area The length of the direction is vertical; or
  • the light transmissive structure further includes: a plurality of linear dot matrix light strips disposed in the second stage region, a length direction of each of the linear dot matrix light strips and the etched processed region The length direction is vertical.
  • the processed regions are arranged along a gate line of the array TFT layer.
  • another aspect of the embodiments of the present invention further provides a method for preparing an array substrate, including the steps of:
  • Covering the photosensitive resin material with a photomask having a light transmissive region or a light shielding region covering the plurality of first pad carriers, second pad carriers, and trench regions, and corresponding to The second pad stage area is provided with a light transmission adjusting component;
  • the developed black photosensitive resin material is subjected to a high-temperature baking leveling treatment to fill at least a portion of the black photosensitive resin material of the secondary spacer into the grooves or valleys.
  • the method further includes depositing an insulating layer on the first pad stage, the second pad stage, and the trench formed by etching.
  • the photomask when the black photosensitive resin material adopts a negative photosensitive material, the photomask is provided with a light transmissive area covering the plurality of first pad carriers, the second pad stage, and the groove region,
  • the light transmission adjusting member is a light blocking structure;
  • the reticle is provided with a light shielding area covering the plurality of first pad carriers, the second pad stage, and the groove region, the light transmission
  • the adjusting member is a light transmitting structure.
  • the light blocking structure disposed in the second pad stage area is an annular light bar disposed around the second stage area, the light bar width is less than 8um, and the light bar distance is The distance between the edges of the spacer is less than 4um; or
  • the light-transmitting structure disposed in the second pad stage region is an annular light-transmitting strip disposed around the second stage region, the light-transmitting strip width is less than 8um, and the light-transmitting strip is separated from the second The distance between the edges of the spacer is less than 4um.
  • the light blocking structure further includes: a plurality of linear dot matrix shading strips disposed in the second stage area, a length direction of each of the linear lattice shading strips and the etched processing area The length of the direction is vertical; or
  • the light transmissive structure further includes: a plurality of linear dot matrix light strips disposed in the second stage region, a length direction of each of the linear dot matrix light strips and the etched processed region The length direction is vertical.
  • Embodiments of the present invention have the following beneficial effects:
  • the preparation method provided by the present invention can form a groove or a concave strip around the secondary spacer by providing an annular light-transmitting regulating member corresponding to the second pad stage region, and then black-sensitive after development
  • the resin material is subjected to a high-temperature baking leveling treatment, so that at least a part of the black photosensitive resin material of the secondary spacer is level-filled to the groove or the concave strip, so that the height of the secondary spacer can be lowered, thereby increasing the main spacer and The step difference between the secondary spacers;
  • FIG. 1 is a schematic structural view of a color resisting region of an array substrate and a spacer region in the prior art
  • Figure 2 is a cross-sectional view taken along line A-A of the liquid crystal display panel corresponding to Figure 1;
  • FIG. 3 is a schematic diagram of a main flow of an embodiment of a method for preparing an array substrate according to the present invention
  • FIG. 4 is a schematic view showing the color resisting region of the array substrate and the structure of the spacer
  • Figure 5 is a schematic structural view of the reticle of Figure 3.
  • FIG. 6 is a cross-sectional view showing the structure of the array substrate formed by exposure and development of the mask in FIG. 3;
  • FIG. 7 is a cross-sectional view showing the structure of the array substrate formed after baking and leveling in FIG.
  • FIG. 3 a schematic diagram of a main flow of an embodiment of a method for fabricating an array substrate provided by the present invention is shown.
  • the method includes The following steps:
  • step S10 a substrate substrate 10 is provided, and an array TFT layer 11 is formed on the substrate substrate 10, and at least a color resist layer 13 is formed on the array TFT layer 11;
  • Step S11 processing (such as exposure display) of at least one region of the color resist layer 13 (such as the F region in FIG. 4) to form a plurality of first pad carriers 130, second pad carriers 131, and a groove region 132 between the first pad stage 131 and the second pad stage 131; wherein a surface of the first pad stage 130 is higher than a surface of the second pad stage 131, wherein The first pad stage 130 is for forming a main spacer, and the second pad stage 131 is for forming a sub-spacer; more specifically, the processed area is along a gate line of the array TFT layer (not shown) arrangement.
  • Step S12 depositing a black photosensitive resin material on the processed region F to cover the first pad stage 130, the second pad stage 131, and the trench region 132. It is understood that In a practical embodiment, a region where the black photosensitive resin material is deposited is larger than an etching treatment region in the color resist layer, and the black photosensitive resin material is a negative photosensitive material or a positive photosensitive material;
  • the insulating layer 12 may be made of a material such as SiOx or SiOx/SiNx composite;
  • Step S13 covering the photosensitive resin material with a mask 5, as shown in FIG. 5, the mask 5 has a cover of the plurality of first pad carriers 130, second pad carriers 132, and trenches.
  • the light-transmissive region 50 of the region indicates a region corresponding to the first pad stage and the second pad stage by dashed lines in the light-transmitting area 50, respectively. It can be understood that FIG. 5 only shows an example.
  • the photomask 5 When the black photosensitive resin material adopts a negative photosensitive material, the photomask 5 is provided with a cover of the plurality of first pad carriers, and a second a pad carrier and a light transmissive region 50 of the trench region; conversely, when the black photosensitive resin material is a positive photosensitive material, the photomask 5 is provided with a plurality of first pad carriers, a two-pad stage and a light-shielding region of the trench region; in short, in practical applications, if a negative material is used, the chromium (Cr) layer is removed in the region 50 to form a light-transmitting region; if a positive material is used, Then, the chrome layer is covered in the region 50 to form a light shielding region; more specifically, a light transmission adjusting member is disposed in a region corresponding to the second pad stage 130, for example, when the region 50 is a light transmitting region, The light transmission adjusting member is a light blocking structure; otherwise, when the region 50 is
  • the light blocking structure disposed in the area of the second pad stage 130 is an annular light bar 51 disposed around the area of the second stage 130.
  • the light bar width is less than 8 um (eg, 4 um), and the distance of the light bar 51 from the intended edge of the secondary spacer is less than 4 um (eg, 2 um).
  • the light blocking structure further includes: a plurality of linear dot matrix strips 52 disposed on the second stage region 131, each of the linear lattice strips 52 The length direction is perpendicular to the length direction of the etched area, and each linear dot matrix strip 52 is composed of a plurality of light blocking points.
  • the number of linear dot arrays is set according to specific conditions, and adjacent light blocking points are arranged. The intervals may not be equal;
  • the light transmitting structure disposed in the second pad stage region is an annular light-transmitting strip disposed around the second stage region, the light-transmitting strip The width is less than 8 um, and the distance of the light-transmitting strip from the edge of the secondary spacer is less than 4 um.
  • the light transmissive structure further includes: a plurality of linear dot matrix light strips disposed in the second stage region, each linear dot matrix light strip may be composed of a plurality of light transmitting points, The length direction of each of the linear lattice strips is perpendicular to the length direction of the etched region.
  • Step S14 exposing the photosensitive resin material through the mask 5, and performing development processing to form the black photosensitive resin material on the first pad stage 130 to form a main spacer 140.
  • a second spacer 141 is formed on the second pad stage 130, a black matrix 142 is formed on the groove region 132, and a groove or a valley 143 is formed in a region around the secondary spacer 141 by the light transmission adjusting member.
  • the groove or valley 143 is generated by the annular light blocking strip 51 (or the annular light-transmitting strip) in the reticle 50; further, the reticle 5 comprises a linear lattice shading strip.
  • a recessed region 144 may be formed on top of the secondary spacer 140. Since the length direction of the recessed region 144 is substantially perpendicular to the direction of the gate line, vertical spacers may be avoided. Forming two micro-protrusions in the direction of the grid line;
  • Step S15 performing high-temperature baking leveling treatment on the developed black photosensitive resin material, so that at least a portion of the black photosensitive resin material of the secondary spacer 141 is level-filled into the groove or valley 143, thereby
  • the height of the secondary spacer 141 can be lowered, as shown in Fig. 7, showing the structure after the high temperature baking leveling process, from which it can be seen that the groove 143 in Fig. 6 has been leveled, and the spacer 141 The top of the top portion becomes flatter and the height is also lowered.
  • the height difference d2 between the main spacer 140 and the secondary spacer 141 is greater than the height difference d1 between the two in FIG. 6;
  • a device such as the pixel electrode 16 needs to be formed on the insulating layer 12 during the preparation of a specific array substrate.
  • the invention accordingly provides a method for preparing a spacer structure of an array substrate, which comprises the following steps:
  • Processing eg, exposure development in at least one region of the color resist layer of the array substrate to form a plurality of first pad carriers, a second pad stage, and a first pad stage and a second pad stage a trench region; wherein a surface of the first pad stage is higher than a surface of the second pad stage, wherein the processed region is disposed along a gate line of the array TFT layer;
  • the developed black photosensitive resin material is subjected to a high-temperature baking leveling treatment to fill at least a portion of the black photosensitive resin material of the secondary spacer into the grooves or valleys.
  • the photomask is provided with a cover of the plurality of first pad carriers, a second pad stage, and
  • the light transmission adjusting portion is a light blocking structure, the light blocking strip width is less than 8 um, and the distance of the light blocking strip from the edge of the secondary spacer is less than 4 um.
  • the light blocking structure further includes: a plurality of linear dot bars disposed in the second stage region, the length direction of each linear dot matrix bar and the etching The length direction of the treated region is vertical; by providing a linear dot strip, a recessed region can be formed on the top of the secondary spacer during exposure development of the photosensitive resin material.
  • the photomask when the black photosensitive resin material adopts a positive photosensitive material, is provided with a cover of the plurality of first pad carriers and a second pad stage. And a light shielding region of the trench region, wherein the light transmission adjusting member is a light transmitting structure.
  • the light transmissive structure is an annular light-transmissive strip disposed around the second stage region, the light-transmissive strip has a width of less than 8 ⁇ m, and the distance of the light-transmitting strip from the edge of the secondary spacer is Less than 4um.
  • the preparation method provided by the present invention can form a groove or a concave strip around the secondary spacer by providing an annular light-transmitting regulating member corresponding to the second pad stage region, and then black-sensitive after development
  • the resin material is subjected to a high-temperature baking leveling treatment, so that at least a part of the black photosensitive resin material of the secondary spacer is level-filled to the groove or the concave strip, so that the height of the secondary spacer can be lowered, thereby increasing the main spacer and The step difference between the secondary spacers;

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Abstract

本发明公开了一种阵列基板的间隔件结构的制备方法，包括步骤：在阵列基板的色阻层上形成多个具有高度差的第一衬垫载台及第二衬垫载台；在其上沉积一层覆盖第一衬垫载台和第二衬垫载台的黑色光敏树脂材料；透过光罩对光敏树脂材料进行曝光，光罩具有透光区或遮光区，且在第二衬垫载台区域设置有透光调节部件，并进行显影处理，使黑色光敏树脂材料在第一衬垫载台上形成主间隔件，在第二衬垫载台上形成次间隔件，并在次间隔件周围区域形成凹槽或凹谷；对显影后的黑色光敏树脂材料进行高温烘烤流平处理，使次间隔件的至少部分黑色光敏树脂材料流平填充至凹槽或凹谷中。本发明还公开了相应的阵列基板的制备方法。实施本发明实施例，可以增大主间隔件与次间隔件之间的段差及提高其平整度，并提高产品良率。

Description

一种阵列基板的制备方法及其间隔件结构的制备方法
本申请要求于2018年3月20日提交中国专利局、申请号为201810230842.4、发明名称为“一种阵列基板的制备方法及其间隔件结构的制备方法”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示领域，特别涉及一种阵列基板的制备方法及其间隔件结构的制备方法。
背景技术
BPS(Black Photo Spacer，黑间隔件)技术是整合常规液晶显示器LCD中的BM((Black Matrix，黑矩阵)和PS(Photo Spacer，间隔件)两道独立制程为一道，利用黑色遮光光敏树脂形成高度不一的三种功能结构，从高到底分别是主间隔件(Main PS)、次间隔件(Sub PS)及黑矩阵。
如图1和图2所示，示出现有的一种采用BPS技术制作的液晶显示器的结构示意图。其中，通过将栅线区域的色阻层13’挖开(见图1中的F’区域)，然后采用黑色遮光光敏树脂进行遮盖并一并制作主间隔件140’和次间隔件141’，其中，在对应需要形成主间隔件140’和次间隔件141’区域分别制作高度不一的主衬垫130’和次衬垫131’，在进行BPS涂敷后依靠流平效应获得主间隔件140’和次间隔件141’之间最终的表面段差。
而主间隔件140’和次间隔件141’之间最终的段差会影响成盒制程中液晶极限(LC Margin)的安全范围大小，从而影响良率，在现有的很多应用场合，会面临如段差太小的问题；同时，在现有技术中，次间隔件141’的表面不够平坦。
发明内容
本发明所要解决的技术问题在于，提供一种阵列基板的制备方法及其间隔件结构的制备方法，可以增大主间隔件与次间隔件之间的段差及提高其平整度，从而提高产品良率。
为了解决上述技术问题，本发明的实施例的一方面提供一种阵列基板的间隔件结构的制备方法，其包括步骤：
在阵列基板的色阻层的至少一区域形成多个第一衬垫载台、第二衬垫载台以及位于第一衬垫载台和第二衬垫载台之间的沟槽区域；其中所述第一衬垫载台的表面高于所述第二衬垫载台的表面；
在所述经过处理的区域上沉积一层黑色光敏树脂材料，以覆盖所述第一衬垫载台、第二衬垫载台以及沟槽区域；
采用一光罩覆盖所述光敏树脂材料，所述光罩具有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的透光区或遮光区，且在对应于所述第二衬垫载台区域设置有透光调节部件；
透过所述光罩对所述黑色光敏树脂材料进行曝光，并进行显影处理，使所述黑色光敏树脂材料在所述第一衬垫载台上形成主间隔件，在所述第二衬垫载台上形成次间隔件，在沟槽上形成黑色矩阵，并利用所述透光调节部件在所述次间隔件周围区域形成凹槽或凹谷；
对所述显影后的黑色光敏树脂材料进行高温烘烤流平处理，使所述次间隔件的至少部分黑色光敏树脂材料流平填充至所述凹槽或凹谷。
其中，进一步包括，在所述第一衬垫载台、第二衬垫载台以及沟槽上沉积一层绝缘层。
其中，当所述光敏树脂材料采用负性感光材料时，所述光罩上设置有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的透光区，所述透光调节部件为挡光结构；或者
当所述光敏树脂材料采用正性感光材料，所述光罩上设置有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的遮光区，所述透光调节部件为透光结构。
其中，在所述第二衬垫载台区域设置的挡光结构为设置于所述第二载台区域周围的环形挡光条，所述挡光条宽度小于8um，所述挡光条距离所述次 间隔件边缘的距离小于4um；或者
在所述第二衬垫载台区域设置的透光结构为设置于所述第二载台区域周围的环形透光条，所述透光条宽度小于8um，所述透光条距离所述次间隔件边缘的距离小于4um。
其中，所述挡光结构进一步包括：多个设置于所述第二载台区域的多个线性点阵遮光条，所述每一线性点阵遮光条的长度方向与所述刻蚀处理的区域的长度方向垂直；或者
所述透光结构进一步包括：多个设置于所述第二载台区域的多个线性点阵透光条，所述每一线性点阵透光条的长度方向与所述刻蚀处理的区域的长度方向垂直。
其中，所述经过处理的区域沿所述阵列TFT层的栅线布置。
相应地，本发明实施例的另一方面还提供一种阵列基板的制备方法，其包括步骤：
提供一衬底基板，并在所述衬底基板上形成有阵列TFT层，在所述阵列TFT层上至少形成有色阻层；
对所述色阻层的至少一区域进行处理形成多个第一衬垫载台、第二衬垫载台以及位于第一衬垫载台和第二衬垫载台之间的沟槽区域；其中所述第一衬垫载台的表面高于所述第二衬垫载台的表面；
在所述经过处理的区域上沉积一层黑色光敏树脂材料，以覆盖所述第一衬垫载台、第二衬垫载台以及沟槽区域；
采用一光罩覆盖所述光敏树脂材料，所述光罩具有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的透光区或遮光区，且在对应于所述第二衬垫载台区域设置有透光调节部件；
透过所述光罩对所述光敏树脂材料进行曝光，并进行显影处理，使所述黑色光敏树脂材料在所述第一衬垫载台上形成主间隔件，在所述第二衬垫载台上形成次间隔件，在沟槽上形成黑色矩阵，并利用所述透光调节部件在所述次间隔件周围区域形成凹槽或凹谷；
对所述显影后的黑色光敏树脂材料进行高温烘烤流平处理，使所述次间隔件的至少部分黑色光敏树脂材料流平填充至所述凹槽或凹谷。
其中，进一步包括，在刻蚀形成的所述第一衬垫载台、第二衬垫载台以及沟槽上沉积一层绝缘层。
其中，当所述黑色光敏树脂材料采用负性感光材料时，所述光罩上设置有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的透光区，所述透光调节部件为挡光结构；或者
当所述黑色光敏树脂材料采用正性感光材料，所述光罩上设置有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的遮光区，所述透光调节部件为透光结构。
其中，在所述第二衬垫载台区域设置的挡光结构为设置于所述第二载台区域周围的环形挡光条，所述挡光条宽度小于8um，所述挡光条距离所述次间隔件边缘的距离小于4um；或者
在所述第二衬垫载台区域设置的透光结构为设置于所述第二载台区域周围的环形透光条，所述透光条宽度小于8um，所述透光条距离所述次间隔件边缘的距离小于4um。
其中，所述挡光结构进一步包括：多个设置于所述第二载台区域的多个线性点阵遮光条，所述每一线性点阵遮光条的长度方向与所述刻蚀处理的区域的长度方向垂直；或者
所述透光结构进一步包括：多个设置于所述第二载台区域的多个线性点阵透光条，所述每一线性点阵透光条的长度方向与所述刻蚀处理的区域的长度方向垂直。
其中，所述经过处理的区域沿所述阵列TFT层的栅线布置。实施本发明实施例，具有如下有益效果：
本发明提供的制备方法，通过在光罩对应于第二衬垫载台区域设置有环形透光调节部件，从而可以在次间隔件周围形成凹槽或凹条，然后在对显影后的黑色光敏树脂材料进行高温烘烤流平处理，使次间隔件的至少部分黑色光敏树脂材料流平填充至所述凹槽或凹条，从而可以降低次间隔件的高度，从而可以增大主间隔件与次间隔件之间的段差；
同时，由于在第二衬垫载台区域设置有多个线性点阵透光条或遮光条，且每一线性点阵透光条或遮光条的长度方向与所述刻蚀处理的区域的长度 方向垂直，从而可以在对黑色光敏树脂材料进行曝光显影时，可以在次间隔件的顶部形成凹陷区，避免在间隔件两侧形成轻微凸起，从而提高次间隔件机顶部的平整度。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1是现有技术中阵列基板的色阻区以及制作间隔件区域的结构示意图；
图2是图1对应的液晶显示面板的A-A向剖视图；
图3是本发明提供的一种阵列基板的制备方法一个实施例的主流程示意图；
图4是图3中涉及的阵列基板的色阻区以及制作间隔件区域的结构示意图；
图5是图3中涉及的光罩的结构示意图；
图6是图3中经过光罩曝光及显影后形成的阵列基板的B-B向剖视结构示意图；
图7是图3中经过烘烤和流平后形成的阵列基板的B-B向剖视结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本发明保护的范围。
在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在 附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。
如图3所示，示出了本发明提供的一种阵列基板的制备方法的一个实施例的主流程示意图，一并结合图4至图7所示，在该实施例中，所述方法包括如下步骤：
步骤S10，提供一衬底基板10，并在所述衬底基板10上形成有阵列TFT层11，在所述阵列TFT层11上至少形成有色阻层13；
步骤S11，对所述色阻层13的至少一区域(见图4中的F区域)进行处理(如曝光显形)形成多个第一衬垫载台130、第二衬垫载台131以及位于第一衬垫载台131和第二衬垫载台131之间的沟槽区域132；其中所述第一衬垫载台130的表面高于所述第二衬垫载台131的表面，其中第一衬垫载台130上用于形成主间隔件，而第二衬垫载台131上用于形成次间隔件；更具体地，所述经过处理的区域沿所述阵列TFT层的栅线(未示出)布置。
步骤S12，在所述经过处理的区域F上沉积一层黑色光敏树脂材料，以覆盖所述第一衬垫载台130、第二衬垫载台131以及沟槽区域132，可以理解的是，在实际实施例中，沉积黑色光敏树脂材料的区域要大于色阻层中刻蚀处理区域，所述黑色光敏树脂材料为负性感光材料或正性感光材料；
可以理解的是，在实际实施例中，在沉积黑色光敏树脂材料之前，需要在处理形成的所述第一衬垫载台130、第二衬垫载台131以及沟槽132上沉积一层绝缘层12；在本实施例中，所述绝缘层12可以采用诸如SiOx材料，或SiOx/SiNx复合材料；
步骤S13，采用一光罩5覆盖所述光敏树脂材料，如图5所示，所述光罩5具有覆盖所述多个第一衬垫载台130、第二衬垫载台132以及沟槽区域的透光区50，为便于说明，在所述透光区50中用虚线分别表示第一衬垫载台和第二衬垫载台所对应的区域。可以理解的是，图5只示出了一个例子，当所述黑色光敏树脂材料采用负性感光材料时，所述光罩5上设置有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的透光区50；反之，当所述黑色光敏树脂材料采用正性感光材料，所述光罩5上设置有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的遮光区；简言之，在实际应用 中，如果采用负性材料，则在区域50中去掉铬(Cr)层形成透光区；如果采用正性材料，则在区域50中覆盖铬层形成遮光区；更具体地，在对应于所述第二衬垫载台130区域设置有透光调节部件，例如，当所述区域50为透光区时，所述透光调节部件为挡光结构；反之，当所述区域50为遮光区时，所述透光调节部件为透光结构；
具体地，在一个例子中，当使用负性感光材料时，在所述第二衬垫载台130区域设置的挡光结构为设置于所述第二载台130区域周围的环形挡光条51，所述挡光条宽度小于8um(如4um)，所述挡光条51距离所述次间隔件预期边缘的距离小于4um(如2um)。
更进一步的，在一些实施例中，所述挡光结构进一步包括：多个设置于所述第二载台区域131的多个线性点阵遮光条52，所述每一线性点阵遮光条52的长度方向与所述刻蚀处理的区域的长度方向垂直，每一线性点阵遮光条52由多个挡光点组成，线性点阵条数量根据具体情况设置，相邻的挡光点之间的间隔可以不相等；
可以理解的是，当使用正性感光材料时，在所述第二衬垫载台区域设置的透光结构为设置于所述第二载台区域周围的环形透光条，所述透光条宽度小于8um，所述透光条距离所述次间隔件边缘的距离小于4um。更进一步的，所述透光结构进一步包括：多个设置于所述第二载台区域的多个线性点阵透光条，每一线性点阵透光条可以由多个透光点组成，所述每一线性点阵透光条的长度方向与所述刻蚀处理的区域的长度方向垂直。
步骤S14，透过所述光罩5对所述光敏树脂材料进行曝光，并进行显影处理，使所述黑色光敏树脂材料在所述第一衬垫载台130上形成主间隔件140，在所述第二衬垫载台130上形成次间隔件141，在沟槽区域132上形成黑色矩阵142，并利用所述透光调节部件在所述次间隔件141周围区域形成凹槽或凹谷143，可以理解的是，所述凹槽或凹谷143是由于光罩50中的环形挡光条51(或环形透光条)而产生的；进一步的，在光罩5包含线性点阵遮光条52(或线性点阵透光条)的例子中，进一步地，可以在次间隔件140顶部产生凹陷区144，由于凹陷区144的长度方向与栅线方向大致垂直，可以避免在次间隔件垂直于栅线方向的两件形成微型凸起；
步骤S15，对所述显影后的黑色光敏树脂材料进行高温烘烤流平处理，使所述次间隔件141的至少部分黑色光敏树脂材料流平填充至所述凹槽或凹谷143中，从而可以降低次间隔件141的高度，如图7所示，示出了经过高温烘烤流平处理后的结构，从中可以看出，图6中的凹槽143已被流平，且间隔件141的顶部变得更平坦，且高度也有所降低，在图7中主间隔件140与次间隔件141的高度差d2要大于图6中两者的高度差d1；
可以理解的是，在具体的阵列基板的制备过程中，需要在绝缘层12上形成诸如像素电极16等器件。
本发明相应的提供一种阵列基板的间隔件结构的制备方法，其包括如下步骤：
在阵列基板的色阻层的至少一区域进行处理(如曝光显影)形成多个第一衬垫载台、第二衬垫载台以及位于第一衬垫载台和第二衬垫载台之间的沟槽区域；其中所述第一衬垫载台的表面高于所述第二衬垫载台的表面，其中，所述经过处理的区域沿所述阵列TFT层的栅线布置；
在刻蚀形成的所述第一衬垫载台、第二衬垫载台以及沟槽上沉积一层绝缘层；
在所述经过处理的区域的绝缘层上沉积一层黑色光敏树脂材料，以覆盖所述第一衬垫载台、第二衬垫载台以及沟槽区域，其中，所述黑色光敏树脂材料采用负性感光材料或正性感光材料；
采用一光罩覆盖所述黑色光敏树脂材料，所述光罩具有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的透光区或遮光区，且在对应于所述第二衬垫载台区域设置有透光调节部件；
透过所述光罩对所述黑色光敏树脂材料进行曝光，并进行显影处理，使所述黑色光敏树脂材料在所述第一衬垫载台上形成主间隔件，在所述第二衬垫载台上形成次间隔件，在沟槽上形成黑色矩阵，并利用所述透光调节部件在所述次间隔件周围区域形成凹槽或凹谷；
对所述显影后的黑色光敏树脂材料进行高温烘烤流平处理，使所述次间隔件的至少部分黑色光敏树脂材料流平填充至所述凹槽或凹谷。
可以理解的是，在一些例子中，当所述黑色光敏树脂材料采用负性感光 材料时，所述光罩上设置有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的透光区，所述透光调节部件为挡光结构，所述挡光条宽度小于8um，所述挡光条距离所述次间隔件边缘的距离小于4um。
在另一些例子中，所述挡光结构进一步包括：多个设置于所述第二载台区域的多个线性点阵条，所述每一线性点阵遮光条的长度方向与所述刻蚀处理的区域的长度方向垂直；通过设置线性点阵条，在对光敏树脂材料进行曝光显影时，可以在次间隔件的顶部形成凹陷区。
可以理解的是，在其他的实施例中，当所述黑色光敏树脂材料采用正性感光材料，所述光罩上设置有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的遮光区，所述透光调节部件为透光结构。在一些例子中，所述透光结构为设置于所述第二载台区域周围的环形透光条，所述透光条宽度小于8um，所述透光条距离所述次间隔件边缘的距离小于4um。
更多的细节，可以参考前述对图3至图7的描述，在此不进行赘述。
实施本发明实施例，具有如下有益效果：
本发明提供的制备方法，通过在光罩对应于第二衬垫载台区域设置有环形透光调节部件，从而可以在次间隔件周围形成凹槽或凹条，然后在对显影后的黑色光敏树脂材料进行高温烘烤流平处理，使次间隔件的至少部分黑色光敏树脂材料流平填充至所述凹槽或凹条，从而可以降低次间隔件的高度，从而可以增大主间隔件与次间隔件之间的段差；
同时，由于在第二衬垫载台区域设置有多个线性点阵透光条或遮光条，且每一线性点阵透光条或遮光条的长度方向与所述刻蚀处理的区域的长度方向垂直，从而可以在对黑色光敏树脂材料进行曝光显影时，可以在次间隔件的顶部形成凹陷区，避免在间隔件两侧形成轻微凸起，从而提高次间隔件机顶部的平整度。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没 有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个......”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (12)

  1. 一种阵列基板的间隔件结构的制备方法，其中，包括步骤：
    在阵列基板的色阻层的至少一区域进行处理形成多个第一衬垫载台、第二衬垫载台以及位于第一衬垫载台和第二衬垫载台之间的沟槽区域；其中所述第一衬垫载台的表面高于所述第二衬垫载台的表面；
    在所述经过处理的区域上沉积一层黑色光敏树脂材料，以覆盖所述第一衬垫载台、第二衬垫载台以及沟槽区域；
    采用一光罩覆盖所述黑色光敏树脂材料，所述光罩具有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的透光区或遮光区，且在对应于所述第二衬垫载台区域设置有透光调节部件；
    透过所述光罩对所述黑色光敏树脂材料进行曝光和显影处理，使所述黑色光敏树脂材料在所述第一衬垫载台上形成主间隔件，在所述第二衬垫载台上形成次间隔件，在沟槽上形成黑色矩阵，并利用所述透光调节部件在所述次间隔件周围区域形成凹槽或凹谷；
    对所述显影后的黑色光敏树脂材料进行高温烘烤流平处理，使所述次间隔件的至少部分黑色光敏树脂材料流平填充至所述凹槽或凹谷。
  2. 如权利要求1所述的制备方法，其中，进一步包括，在所述第一衬垫载台、第二衬垫载台以及沟槽上沉积一层绝缘层。
  3. 如权利要求2所述的制备方法，其中，当所述黑色光敏树脂材料采用负性感光材料时，所述光罩上设置有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的透光区，所述透光调节部件为挡光结构；或者
    当所述黑色光敏树脂材料采用正性感光材料，所述光罩上设置有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的遮光区，所述透光调节部件为透光结构。
  4. 如权利要求3所述的制备方法，其中，在所述第二衬垫载台区域设置的挡光结构为设置于所述第二载台区域周围的环形挡光条，所述挡光条宽 度小于8um，所述挡光条距离所述次间隔件边缘的距离小于4um；或者
    在所述第二衬垫载台区域设置的透光结构为设置于所述第二载台区域周围的环形透光条，所述透光条宽度小于8um，所述透光条距离所述次间隔件边缘的距离小于4um。
  5. 如权利要求4所述的制备方法，其中，所述挡光结构进一步包括：多个设置于所述第二载台区域的多个线性点阵遮光条，所述每一线性点阵遮光条的长度方向与所述刻蚀处理的区域的长度方向垂直；或者
    所述透光结构进一步包括：多个设置于所述第二载台区域的多个线性点阵透光条，所述每一线性点阵透光条的长度方向与所述刻蚀处理的区域的长度方向垂直。
  6. 如权利要求5所述的制备方法，其中，所述经过处理的区域沿所述阵列TFT层的栅线布置。
  7. 一种阵列基板的制备方法，其中，包括步骤：
    提供一衬底基板，并在所述衬底基板上形成有阵列TFT层，在所述阵列TFT层上至少形成有色阻层；
    对所述色阻层的至少一区域进行处理形成多个第一衬垫载台、第二衬垫载台以及位于第一衬垫载台和第二衬垫载台之间的沟槽区域；其中所述第一衬垫载台的表面高于所述第二衬垫载台的表面；
    在所述经过处理的区域上沉积一层黑色光敏树脂材料，以覆盖所述第一衬垫载台、第二衬垫载台以及沟槽区域；
    采用一光罩覆盖所述光敏树脂材料，所述光罩具有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的透光区或遮光区，且在对应于所述第二衬垫载台区域设置有透光调节部件；
    透过所述光罩对所述黑色光敏树脂材料进行曝光，并进行显影处理，使所述黑色光敏树脂材料在所述第一衬垫载台上形成主间隔件，在所述第二衬垫载台上形成次间隔件，在沟槽上形成黑色矩阵，并利用所述透光调节部件 在所述次间隔件周围区域形成凹槽或凹谷；
    对所述显影后的黑色光敏树脂材料进行高温烘烤流平处理，使所述次间隔件的至少部分黑色光敏树脂材料流平填充至所述凹槽或凹谷。
  8. 如权利要求7所述的制备方法，其中，进一步包括，在刻蚀形成的所述第一衬垫载台、第二衬垫载台以及沟槽上沉积一层绝缘层。
  9. 如权利要求8所述的制备方法，其中，当所述光敏树脂材料采用负性感光材料时，所述光罩上设置有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的透光区，所述透光调节部件为挡光结构；或者
    当所述光敏树脂材料采用正性感光材料，所述光罩上设置有覆盖所述多个第一衬垫载台、第二衬垫载台以及沟槽区域的遮光区，所述透光调节部件为透光结构。
  10. 如权利要求9所述的制备方法，其中，在所述第二衬垫载台区域设置的挡光结构为设置于所述第二载台区域周围的环形挡光条，所述挡光条宽度小于8um，所述挡光条距离所述次间隔件边缘的距离小于4um；或者
    在所述第二衬垫载台区域设置的透光结构为设置于所述第二载台区域周围的环形透光条，所述透光条宽度小于8um，所述透光条距离所述次间隔件边缘的距离小于4um。
  11. 如权利要求10所述的制备方法，其中，所述挡光结构进一步包括：多个设置于所述第二载台区域的多个线性点阵遮光条，所述每一线性点阵遮光条的长度方向与所述刻蚀处理的区域的长度方向垂直；或者
    所述透光结构进一步包括：多个设置于所述第二载台区域的多个线性点阵透光条，所述每一线性点阵透光条的长度方向与所述刻蚀处理的区域的长度方向垂直。
  12. 如权利要求11所述的制备方法，其中，所述经过处理的区域沿所 述阵列TFT层的栅线布置。
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CN107039352A (zh) * 2017-04-12 2017-08-11 深圳市华星光电技术有限公司 Tft基板的制作方法及tft基板
JP2017187537A (ja) * 2016-04-01 2017-10-12 凸版印刷株式会社 カラーフィルタ基板及びそれを用いた液晶表示装置
CN107505766A (zh) * 2017-10-12 2017-12-22 深圳市华星光电半导体显示技术有限公司 彩膜基板及制造方法、增加膜层厚度的结构

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017187537A (ja) * 2016-04-01 2017-10-12 凸版印刷株式会社 カラーフィルタ基板及びそれを用いた液晶表示装置
CN107039352A (zh) * 2017-04-12 2017-08-11 深圳市华星光电技术有限公司 Tft基板的制作方法及tft基板
CN106980202A (zh) * 2017-05-23 2017-07-25 深圳市华星光电技术有限公司 具有一体式黑色矩阵与光阻间隔物的液晶面板的制作方法及光罩
CN107505766A (zh) * 2017-10-12 2017-12-22 深圳市华星光电半导体显示技术有限公司 彩膜基板及制造方法、增加膜层厚度的结构

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