WO2019171544A1 - 半導体装置の製造方法及びフィルム状接着剤 - Google Patents

半導体装置の製造方法及びフィルム状接着剤 Download PDF

Info

Publication number
WO2019171544A1
WO2019171544A1 PCT/JP2018/009043 JP2018009043W WO2019171544A1 WO 2019171544 A1 WO2019171544 A1 WO 2019171544A1 JP 2018009043 W JP2018009043 W JP 2018009043W WO 2019171544 A1 WO2019171544 A1 WO 2019171544A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive
film
semiconductor element
semiconductor device
semiconductor
Prior art date
Application number
PCT/JP2018/009043
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
祐樹 中村
大久保　恵介
美千子 彼谷
大輔 山中
達也 矢羽田
Original Assignee
日立化成株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to CN201880090862.4A priority Critical patent/CN111819672A/zh
Priority to SG11202008637UA priority patent/SG11202008637UA/en
Priority to KR1020207026916A priority patent/KR20200128051A/ko
Priority to JP2020504597A priority patent/JP7115537B2/ja
Priority to PCT/JP2018/009043 priority patent/WO2019171544A1/ja
Priority to TW108106384A priority patent/TW201938720A/zh
Publication of WO2019171544A1 publication Critical patent/WO2019171544A1/ja

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device and a film adhesive used therefor.
  • stacked MCPs Multi Chip Packages
  • film adhesives are widely used as die bonding adhesives.
  • An example of a multi-stage stacked package using a film adhesive is a wire-embedded package. This is a package in which a wire connected to a semiconductor element to be crimped is crimped while being crimped using a high-fluid film adhesive. It is installed in memory packages for audio equipment.
  • Patent Document 1 includes a resin having a high molecular weight component and a thermosetting component mainly composed of an epoxy resin and a filler having a thickness of 10 to 250 ⁇ m. Adhesive sheets have been proposed.
  • Patent Document 2 proposes an adhesive composition containing a mixture containing an epoxy resin and a phenol resin and an acrylic copolymer.
  • connection reliability of a semiconductor device greatly depends on whether or not a semiconductor element can be mounted without generating a gap on the bonding surface. Therefore, a high-fluid film adhesive is used so that the semiconductor element can be crimped without generating voids, or the melt viscosity is low so that the generated voids can be eliminated in the sealing process of the semiconductor elements. Ingenuity has been made such as using a film adhesive.
  • Patent Document 3 proposes an adhesive sheet having low viscosity and low tack strength.
  • a semiconductor element is bonded to a substrate through a thermosetting adhesive, and then the adhesive is cured by heating in a pressurized atmosphere using a pressure oven or the like.
  • the pressure oven is a device that can heat and pressurize the internal atmosphere, and in the pressure oven, the adhesive is heated while receiving pressure from the surrounding gas. Thereby, the space
  • An object of the present invention is to provide a method for manufacturing a semiconductor device and an adhesive used therefor that can suppress the occurrence of the above.
  • a method of manufacturing a semiconductor device includes: a first wire bonding step of electrically connecting a first semiconductor element to a substrate via a first wire; and thermosetting the second semiconductor element.
  • the melt viscosity at 120 ° C. of the adhesive before the curing treatment is 1000 to 3000 Pa ⁇ s.
  • the present inventors achieve excellent embedding by a thermosetting adhesive heated in a pressurized atmosphere, and highly suppress misalignment of semiconductor elements stacked via this adhesive.
  • the adhesive is not too hard and not too soft in the process of being heated in a pressurized atmosphere.
  • the melt viscosity at 120 ° C. of the adhesive reflects the fluidity of the adhesive when heated in a pressurized atmosphere.
  • the specific range 1000 to 3000 Pa ⁇ s
  • the adhesive is preferably heated at 60 to 175 ° C. for 5 minutes or more in a pressurized atmosphere of 0.1 to 1.0 MPa.
  • the method for manufacturing a semiconductor device may include a step of further stacking a third semiconductor element on the second semiconductor element after the heating and pressing step. In this case, the capacity of the obtained semiconductor device can be increased.
  • the semiconductor device manufacturing method includes a second wire bonding step of electrically connecting the substrate and the second semiconductor element via a second wire, and sealing the second semiconductor element with a resin. And a step of performing. In this case, the reliability of the obtained semiconductor device is further increased.
  • the adhesive according to the present invention is used in a semiconductor device manufacturing process.
  • the adhesive is heated in a pressurized atmosphere, and at least one of the wires on the substrate and at least one of the semiconductor elements are embedded in the adhesive after the curing.
  • the adhesive has a melt viscosity of 1000 to 3000 Pa ⁇ s at 120 ° C.
  • the adhesive is not too hard and not too soft in the process of being heated in a pressurized atmosphere, so that the semiconductor element is positioned while exhibiting good embeddability in the heating and pressing process in the manufacture of a semiconductor device.
  • the occurrence of deviation can be suppressed. Therefore, a semiconductor device showing good connection reliability can be obtained.
  • the adhesive strength of the adhesive after curing with the substrate coated with solder resist ink is preferably 1.0 MPa or more. In this case, the connection reliability of the obtained semiconductor device becomes better.
  • the adhesive curing process is performed by heating in a pressurized atmosphere, it is excellent in embedding of wires and the like, and it is possible to suppress the occurrence of misalignment of the semiconductor element.
  • a method for manufacturing a semiconductor device and an adhesive used therefor can be provided.
  • FIG. 2 is a diagram showing a step subsequent to FIG. 1.
  • FIG. 3 is a diagram showing a step subsequent to FIG. 2.
  • FIG. 4 is a diagram showing a step subsequent to FIG. 3.
  • FIG. 5 is a diagram showing a step subsequent to FIG. 4.
  • FIG. 6 is a diagram showing a step subsequent to FIG. 5.
  • the first semiconductor element Wa with the adhesive 41 is pressure-bonded onto the circuit pattern 94 on the substrate 14, and the circuit pattern 84 on the substrate 14 and the The first semiconductor element Wa is electrically bonded and connected (first wire bonding step).
  • an adhesive sheet is prepared by laminating a thermosetting film adhesive 10 on a base film.
  • the method for manufacturing the film adhesive 10 and the adhesive sheet will be described later.
  • An adhesive sheet is laminated on one side of the semiconductor wafer, and the base film is peeled off, thereby sticking the film adhesive 10 on one side of the semiconductor wafer.
  • the thickness of the semiconductor wafer is, for example, 50 ⁇ m, the size is, for example, 8 inches, and the thickness of the film adhesive 10 is, for example, 135 ⁇ m.
  • the dicing tape 60 is bonded to the film adhesive 10
  • the dicing is performed to 7.5 mm square so that the second semiconductor element Waa and the film attached to the second semiconductor element Waa are formed as shown in FIG.
  • a semiconductor element 102 with a film adhesive provided with the adhesive 10 is obtained (laminating step).
  • the laminating step is preferably performed at 50 to 100 ° C., more preferably 60 to 80 ° C.
  • the temperature in the laminating step is 50 ° C. or higher, good adhesion to the semiconductor wafer can be obtained.
  • the temperature of the laminating process is 100 ° C. or lower, the film-like adhesive 10 can be prevented from flowing excessively during the laminating process, so that it is possible to prevent a change in thickness and the like.
  • a dicing method for example, a method using a rotary blade (blade dicing), a method of cutting a film adhesive or both a wafer and a film adhesive with a laser, and a general purpose such as stretching under normal temperature or cooling conditions The method etc. are mentioned.
  • the semiconductor element 102 with the film adhesive is pressure-bonded to the substrate 14 to which the first semiconductor element Wa is bonded and connected via the first wire 88 so that the film adhesive 10 side faces the substrate 15.
  • the semiconductor element 102 with a film adhesive is placed so that the film adhesive 10 covers the first semiconductor element Wa, and then, as shown in FIG.
  • the second semiconductor element Waa is fixed to the substrate 14 by pressing the second semiconductor element Waa together with the film adhesive 10 (crimping step).
  • the film adhesive 10 is preferably crimped for 0.5 to 3.0 seconds under conditions of 80 to 180 ° C. and 0.01 to 0.50 MPa.
  • the film adhesive 10 is heated under a pressurized atmosphere (heating and pressing process).
  • the second semiconductor element Waa has a larger area than the first semiconductor element Wa, and the film adhesive 10 includes not only the first wire 88 on the substrate 14, The first semiconductor element Wa is also embedded. Since the semiconductor device manufacturing method according to the present embodiment includes the heating and pressurizing step, it is possible to embed a semiconductor element that is generally thicker than a wire and difficult to embed. This is because even if a gap on the bonding surface between the semiconductor element and the substrate remains in the crimping step, the void can be more reliably lost or reduced through the heating and pressing step.
  • the film adhesive 10 used in the present embodiment has a melt viscosity at 120 ° C. of 3000 Pa ⁇ s or less, preferably 2500 Pa ⁇ s or less. Thereby, favorable embedding property is obtained in the above-mentioned pressure-bonding step, and even if a void remains, it is easily lost or reduced easily in the heating and pressing step.
  • the film adhesive 10 used in the present embodiment has a melt viscosity of 1000 Pa ⁇ s or more at 120 ° C. Thereby, in the heating and pressurizing step, occurrence of misalignment of the semiconductor element can be suppressed.
  • heating in a pressurized atmosphere is performed, for example, by putting a semiconductor device being manufactured into a pressing oven.
  • the heating temperature in the pressure oven is, for example, 60 to 175 ° C., preferably 80 to 160 ° C., or 100 to 150 ° C.
  • the pressure in the pressurized atmosphere is, for example, 0.1 to 1.0 MPa, preferably 0.2 to 1.0 MPa, 0.3 to 1.0 MPa, or 0.5 to 1.0 MPa.
  • Heating under a pressurized atmosphere is performed for 5 minutes or more, for example.
  • the circuit pattern 84, the second wire 98, and the second semiconductor element Waa are sealed with the sealing material 42.
  • the semiconductor device 200 can be manufactured through such steps.
  • the first semiconductor element Wa is connected to the substrate 14 via the first wire 88 by wire bonding, and the first semiconductor element Wa is formed on the first semiconductor element Wa.
  • the second semiconductor element Waa larger than the area of the first semiconductor element Wa is pressure-bonded via the film adhesive 10.
  • the semiconductor device 200 the first wire 88 and the first semiconductor element Wa are embedded in the film adhesive 10. That is, the semiconductor device 200 obtained by the manufacturing method according to the present embodiment is a wire and semiconductor element embedded semiconductor device.
  • the method for manufacturing a semiconductor device according to the present embodiment since the embedding by the film adhesive 10 is good and the semiconductor element is not misaligned, a semiconductor device having good connection reliability is obtained. Can be obtained.
  • the substrate 14 and the second semiconductor element Waa are further electrically connected via the second wire 98, and the second semiconductor element Waa is sealed with the sealing material 42. ing. Thereby, the reliability of the obtained semiconductor device further increases.
  • the thickness of the first semiconductor element Wa is, for example, 10 to 170 ⁇ m, and the thickness of the second semiconductor element Waa is, for example, 20 to 400 ⁇ m.
  • the thickness of the film adhesive 10 is, for example, 20 to 200 ⁇ m, preferably 30 to 200 ⁇ m, and more preferably 40 to 150 ⁇ m.
  • the first semiconductor element Wa embedded in the film adhesive 10 is a controller chip for driving the semiconductor device 200.
  • the substrate 14 is composed of an organic substrate 90 on which two circuit patterns 84 and 94 are formed on the surface.
  • the first semiconductor element Wa is crimped onto the circuit pattern 94 via an adhesive 41
  • the second semiconductor element Waa is a circuit pattern 94 in which the first semiconductor element Wa is not crimped.
  • the semiconductor element Wa and a part of the circuit pattern 84 are pressure-bonded to the substrate 14 via the film adhesive 10.
  • the film adhesive 10 is embedded in the uneven steps due to the circuit patterns 84 and 94 on the substrate 14.
  • the second semiconductor element Waa, the circuit pattern 84, and the second wire 98 are sealed with a resin sealing material 42.
  • FIG. 7 is a cross-sectional view schematically showing the film adhesive 10.
  • the film-like adhesive 10 is thermosetting and can be produced by forming a film-like adhesive composition that can be in a completely cured (C-stage) state after the curing process through a semi-cured (B-stage) state. .
  • the film adhesive 10 has a melt viscosity of 3000 Pa ⁇ s or less at 120 ° C. Thereby, the favorable embedding property is obtained at the time of crimping
  • the film adhesive 10 has a melt viscosity of 1000 Pa ⁇ s or more at 120 ° C. Thereby, generation
  • the upper limit of the melt viscosity may be 2800 Pa ⁇ s, 2500 Pa ⁇ s, or 2200 Pa ⁇ s.
  • the lower limit of the melt viscosity may be 1200 Pa ⁇ s, 1500 Pa ⁇ s, or 2000 Pa ⁇ s.
  • melt viscosity means the measured value when measured using ARES (manufactured by TA Instruments) while increasing the temperature at a rate of temperature increase of 5 ° C./min while applying 5% strain to the film adhesive 10. To do.
  • the film adhesive 10 preferably has an adhesive strength after curing to a substrate coated with a solder resist ink (for example, trade name: AUS308, manufactured by Taiyo Ink Manufacturing Co., Ltd.) of 1.0 MPa or more. In this case, the connection reliability of the obtained semiconductor device becomes better.
  • a solder resist ink for example, trade name: AUS308, manufactured by Taiyo Ink Manufacturing Co., Ltd.
  • the film adhesive 10 includes, for example, (a) a thermosetting component, (b) a high molecular weight component, and (c) a filler, and, if necessary, (d) a curing accelerator, and (e) A coupling agent can be contained.
  • the range of the melt viscosity can be realized, for example, by adjusting (a) thermosetting component, (b) high molecular weight component, (c) filler type and content.
  • the film adhesive 10 can contain 20 to 60% by mass of (a) a thermosetting component based on the total amount of the film adhesive 10.
  • thermosetting component can be a thermosetting resin, and can be an epoxy resin, a phenol resin, or the like having heat resistance and moisture resistance required for mounting a semiconductor element.
  • Examples of the epoxy resin as component (a) include aromatic ring-containing epoxy resins, aliphatic ring-containing epoxy resins, heterocyclic ring-containing epoxy resins, and aliphatic linear epoxy resins.
  • the epoxy resin as component (a) is preferably an aromatic ring-containing epoxy resin.
  • the epoxy resin as component (a) may be a polyfunctional epoxy resin or a bifunctional epoxy resin.
  • Examples of the aromatic ring-containing epoxy resin include epoxy resins represented by the following general formula (1).
  • n represents an integer of 0 to 5.
  • aromatic ring-containing epoxy resin of component (a) other than the above general formula (1) examples include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol E type epoxy resin, etc., and bifunctional epoxy obtained by modifying them. Resin or the like can be used.
  • an epoxy resin other than the epoxy resins listed above may be used in combination as (a) a thermosetting component.
  • a novolac epoxy resin such as a phenol novolac epoxy resin or a cresol novolac epoxy resin, or a glycidylamine epoxy resin can be used.
  • phenol resin of component (a) an aliphatic ring-containing phenol resin, a heterocyclic ring-containing phenol resin, an aliphatic linear phenol resin, or the like can be used.
  • the phenolic resin examples include Phenolite KA and TD series manufactured by DIC Corporation, and the Millex XLC-series and XL series (for example, Millex XLC-LL) manufactured by Mitsui Chemicals, Inc.
  • the phenolic resin has a water absorption of 2% by mass or less after being put in a constant temperature and humidity chamber of 85 ° C. and 85% RH at 350 ° C. measured with a thermogravimetric analyzer (TGA).
  • TGA thermogravimetric analyzer
  • the heating mass reduction rate temperature increase rate: 5 ° C./min, atmosphere: nitrogen
  • the thermosetting component is at least one of (a1) an epoxy resin whose softening point is room temperature or lower or liquid at room temperature and a phenol resin whose softening point is lower than room temperature or liquid at room temperature (hereinafter referred to as component (a1)). ) And (a2) at least one of an epoxy resin having a softening point higher than room temperature and a phenol resin having a softening point higher than room temperature (hereinafter referred to as component (a2)).
  • room temperature refers to 23 ° C.
  • the epoxy resin of the (a1) component and the (a2) component can be selected from the above epoxy resins depending on the softening point and the state at room temperature. Moreover, as a phenol resin of (a1) component and (a2) component, it can select from the said phenol resin according to the softening point and the state in room temperature.
  • the melt viscosity at 120 ° C. of the film adhesive 10 can be 1000 to 3000 Pa ⁇ s, for example, by adjusting the content of the component (a1) and the component (a2).
  • the epoxy resin and the phenol resin have a ratio of the number of epoxy groups to the number of hydroxyl groups of 0.70 / It is preferably blended so as to be 0.30 to 0.30 / 0.70, more preferably blended so as to be 0.65 / 0.35 to 0.35 / 0.65. More preferably, it is blended so that it becomes 60 / 0.40 to 0.40 / 0.60, and it is blended so that it becomes 0.60 / 0.40 to 0.50 / 0.50. Particularly preferred.
  • the number of epoxy groups in the film adhesive 10 is obtained by dividing the used epoxy resin by the epoxy equivalent, and the number of hydroxyl groups can be obtained by dividing the used phenol resin by the hydroxyl equivalent.
  • the film adhesive 10 can contain 10 to 40% by mass of (b) a high molecular weight component based on the total amount of the film adhesive 10.
  • (B) When content of a high molecular weight component is 40 mass% or less, the meltability at the time of diattaching improves, and there exists a tendency for embedding property to improve. On the other hand, when the content of (b) the high molecular weight component is 10% by mass or more, film formability is easily obtained.
  • the high molecular weight component may be an acrylic resin, and is further obtained by polymerizing a functional monomer having an epoxy group or a glycidyl group such as glycidyl acrylate or glycidyl methacrylate as a crosslinkable functional group.
  • An acrylic resin such as an epoxy group-containing (meth) acrylic copolymer having a glass transition temperature (Tg) of ⁇ 50 ° C. may be used.
  • an epoxy group-containing (meth) acrylic ester copolymer and an epoxy group-containing acrylic rubber can be used, and the component (b) may be an epoxy group-containing acrylic rubber.
  • the epoxy group-containing acrylic rubber is mainly composed of an acrylic ester, and mainly comprises a copolymer of butyl acrylate and acrylonitrile, and a copolymer of ethyl acrylate and acrylonitrile. It is rubber.
  • the weight average molecular weight of the high molecular weight component may be 300,000 or more, and may be 500,000 or more. In addition, the weight average molecular weight of the (b) high molecular weight component may be 1,000,000 or less, and may be 800,000 or less.
  • the weight average molecular weight of the high molecular weight component is 300,000 or more, the film formability tends to be improved.
  • the weight average molecular weight of the high molecular weight component is 1,000,000 or less, the shear viscosity of the uncured film adhesive can be reduced, so that the embedding property becomes better. In addition, the machinability of the uncured film adhesive may be improved, and the quality of dicing may be improved.
  • the glass transition temperature (Tg) of the high molecular weight component can be ⁇ 50 to 50 ° C.
  • flexibility of the film adhesive 10 becomes favorable in the glass transition temperature (Tg) of a high molecular weight component being 50 degrees C or less.
  • the glass transition temperature (Tg) is ⁇ 50 ° C. or higher, the flexibility of the film adhesive does not become too high, so that the film adhesive 10 is easily cut when dicing the semiconductor wafer. For this reason, it is possible to suppress the dicing performance from being deteriorated due to the generation of burrs.
  • the glass transition temperature (Tg) of the high molecular weight component may be -20 ° C to 40 ° C, or -10 ° C to 30 ° C.
  • Tg glass transition temperature
  • the high molecular weight component can have 1 to 15% of structural units having a crosslinkable functional group, based on the total number of structural units, in order to develop a high adhesive force.
  • the structural unit having a crosslinkable functional group is the number of functional monomers in the total number of monomer monomers (number of moles) used in the synthesis of (b) the high molecular weight component.
  • the functional monomer include glycidyl acrylate or glycidyl methacrylate
  • the crosslinkable functional group of the high molecular weight component is derived from the functional group of the functional monomer.
  • the crosslinkable functional group is an epoxy group.
  • the crosslinkable functional group of the high molecular weight component includes not only an epoxy group but also a crosslinkable functional group such as an alcoholic or phenolic hydroxyl group or a carboxyl group.
  • the weight average molecular weight is a polystyrene conversion value using a standard polystyrene calibration curve by gel permeation chromatography (GPC).
  • the glass transition temperature (Tg) is a value measured using a DSC (differential scanning calorimeter) (for example, “Thermo Plus 2” manufactured by Rigaku Corporation).
  • the high molecular weight component used in the present invention can also be obtained as a commercial product.
  • trade name “acrylic rubber HTR-860P-3CSP” manufactured by Nagase ChemteX Corporation may be used.
  • the film adhesive 10 is based on the total amount of the film adhesive 10 from the viewpoint of controlling the fluidity and breakability of the uncured film adhesive and the tensile modulus and adhesive force of the cured film adhesive.
  • the filler can be contained in an amount of 20 to 50% by mass.
  • content of a filler is 20 mass% or more, there exists a tendency for the dicing property of an uncured film adhesive to improve, and the adhesive force after hardening improves.
  • the content of the filler (c) is 50% by mass or less, the fluidity of the uncured film adhesive is improved and the embedding property at the time of die attachment tends to be improved.
  • the average particle diameter of the filler may be 0.1 ⁇ m or more from the viewpoint of the fluidity of the film adhesive 10, and may be 0.1 to 5.0 ⁇ m.
  • the “average particle diameter” is a value obtained when analysis is performed using acetone as a solvent by a laser diffraction particle size distribution analyzer.
  • the filler is an improvement in the dicing property of the film adhesive in the B-stage state, an improvement in the handling property of the film adhesive, an improvement in thermal conductivity, an adjustment of the melt viscosity, a thixotropic property, and an adhesive force. From the standpoint of improving the quality, it can be an inorganic filler, and may be a silica filler.
  • the film adhesive 10 may contain (d) a curing accelerator for the purpose of obtaining good curability.
  • a curing accelerator for the purpose of obtaining good curability.
  • the content of the (d) curing accelerator is 0.01 to 0.2% by mass based on the total amount of the film adhesive 10. Can be.
  • the curing accelerator is preferably an imidazole compound.
  • a curing accelerator that is too reactive has a tendency not only to increase the shear viscosity by heating during the production process of the film-like adhesive, but also to cause significant deterioration over time.
  • a curing accelerator having a reactivity that is too low makes it difficult for the film-like adhesive to be completely cured by the thermal history in the manufacturing process of the semiconductor device, and it is mounted in the product uncured, There is a possibility that sufficient adhesiveness cannot be obtained and the connection reliability of the semiconductor device is deteriorated.
  • the adhesive composition of the present embodiment can contain (e) a coupling agent from the viewpoint of improving adhesiveness, in addition to the components (a) to (d).
  • a coupling agent examples include ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3- (2-aminoethyl) aminopropyltrimethoxysilane.
  • an adhesive composition obtained by applying the above-described adhesive composition varnish on a base film and drying it can be used as an adhesive sheet. Specifically, first, the components (a) to (c) and, if necessary, other additive components such as the above (d) curing accelerator or (e) coupling agent are mixed and kneaded in an organic solvent. Prepare the varnish.
  • the above mixing and kneading can be performed by using a normal stirrer, a raking machine, a three-roller, and a dispersing machine such as a ball mill, and appropriately combining these.
  • the above drying is not particularly limited as long as the solvent used is sufficiently volatilized, but can be usually heated at 60 ° C. to 200 ° C. for 0.1 to 90 minutes.
  • the organic solvent for producing the varnish is not particularly limited as long as it can uniformly dissolve, knead or disperse the above components, and a conventionally known one can be used.
  • solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price.
  • a polyester film for example, a polyester film, a polypropylene film (OPP film etc.), a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyether naphthalate film, a methylpentene film etc. are mentioned. It is done.
  • a varnish layer is formed by applying the obtained varnish on a base film.
  • the solvent is removed from the varnish layer by heat drying to obtain an adhesive sheet.
  • the film adhesive 10 is obtained by removing a base film from an adhesive sheet.
  • the film adhesive 10 obtained in advance and the film adhesive 10 (adhesive sheet) formed on the base film are bonded together.
  • the method of doing is mentioned.
  • the film adhesive 10 preferably has a film thickness of 20 to 200 ⁇ m so that the first semiconductor element, the wire for connecting the semiconductor element, and irregularities such as the wiring circuit of the substrate can be sufficiently filled.
  • the film thickness is 20 ⁇ m or more, there is a tendency that a decrease in adhesive force is suppressed, and when the film thickness is 200 ⁇ m or less, it is economical and can meet the demand for downsizing of the semiconductor device.
  • the film thickness of the film adhesive 10 is more preferably 50 to 200 ⁇ m, further preferably 80 to 200 ⁇ m, and more preferably 100 to It is especially preferable that it is 200 micrometers.
  • the film adhesive 10 can be used as an adhesive sheet 100 in which the film adhesive 10 is laminated on the base film 20 without removing the base film coated with the varnish.
  • the film adhesive 10 can also be used as an adhesive sheet 110 in which a cover film 30 is provided on the side opposite to the surface on which the base film 20 is provided.
  • cover film 30 include a PET film, a PE film, and an OPP film.
  • the film adhesive can also be used as a dicing / die bonding integrated adhesive sheet in which the film adhesive 10 is laminated on a dicing tape. In this case, it is possible to increase the efficiency of the operation in that the laminating process on the semiconductor wafer is performed only once.
  • the dicing tape examples include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film.
  • the dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as necessary.
  • the dicing tape can have adhesiveness, and the above-mentioned plastic film may be provided with adhesiveness. Moreover, the adhesive layer may be provided in the single side
  • Examples of such a dicing / die bonding integrated adhesive sheet include an adhesive sheet 120 shown in FIG. 10 and an adhesive sheet 130 shown in FIG.
  • the adhesive sheet 120 uses a dicing tape 60 in which an adhesive layer 50 is provided on a base film 40 that can ensure elongation when a tensile tension is applied, as a supporting base material.
  • the adhesive layer 50 has a structure in which the film adhesive 10 is provided.
  • the adhesive sheet 130 is provided with the base film 20 on the surface of the film adhesive 10 in the adhesive sheet 120.
  • the base film 40 examples include the above-described plastic films described for the dicing tape.
  • the adhesive layer 50 the resin composition which contains a liquid component and a high molecular weight component and has moderate tack strength is mentioned, for example.
  • the dicing tape can be formed by applying the adhesive layer 50 on the base film 40 and drying, or by bonding the adhesive layer applied to the base film such as a PET film and drying to the base film 40. is there.
  • the tack strength is set to a desired value, for example, by adjusting the ratio of the liquid component and the Tg of the high molecular weight component.
  • the semiconductor element When a dicing / die bonding integrated adhesive sheet such as the adhesive sheet 120 and the adhesive sheet 130 is used for manufacturing a semiconductor device, the semiconductor element has an adhesive force that does not scatter during dicing, and can be easily peeled off from the dicing tape during subsequent pickup. is necessary.
  • Such characteristics can be obtained by adjusting the tack strength of the pressure-sensitive adhesive layer as described above, or changing the tack strength due to photoreaction, etc., but picking up is difficult if the tackiness of the film adhesive is too high. May be. Therefore, it is preferable to appropriately adjust the tack strength of the film adhesive 10.
  • the method for example, when the flow of the film-like adhesive 10 at room temperature (25 ° C.) is increased, the adhesive strength and tack strength tend to increase, and when the flow is decreased, the adhesive strength and tack strength tend to decrease. It is mentioned that there is.
  • Examples of the method for increasing the flow include a method for increasing the content of a compound that functions as a plasticizer.
  • Examples of the method for reducing the flow include a method for reducing the content of a compound that functions as a plasticizer.
  • Examples of the plasticizer include monofunctional acrylic monomers, monofunctional epoxy resins, liquid epoxy resins, and acrylic resins.
  • a film prepared in advance is used as a method of laminating the film-like adhesive 10 on the dicing tape 60.
  • a method of laminating the adhesive 10 on the dicing tape 60 by press or hot roll laminating is exemplified.
  • a hot roll laminating method is preferable because it can be continuously manufactured and is efficient.
  • the film thickness of the dicing tape 60 is not particularly limited, and can be appropriately determined based on the knowledge of those skilled in the art depending on the film thickness of the film adhesive 10 or the application of the dicing / die bonding integrated adhesive sheet.
  • the thickness of the dicing tape 60 is 60 ⁇ m or more, the handleability is improved, and the dicing tape 60 can be prevented from being broken by the expansion in the process of separating the semiconductor elements separated by the dicing from the dicing tape 60.
  • the thickness of the dicing tape 60 is preferably 180 ⁇ m or less from the viewpoint of economy and good handleability. Accordingly, the film thickness of the dicing tape 60 is preferably 60 to 180 ⁇ m.
  • the film-like adhesive is described, and the method for manufacturing a semiconductor device using the film-like adhesive has been described.
  • the film-like adhesive is not necessarily in the form of a film, and may be an adhesive. . That is, the film adhesive may be a liquid or paste adhesive.
  • the semiconductor device 200 of FIG. 6 is a wire and semiconductor embedded semiconductor device in which the first wire 88 and the first semiconductor element Wa are both embedded in the film adhesive 10, but the first semiconductor device 200 is not necessarily the first.
  • the semiconductor element Wa may not be embedded. That is, the semiconductor device 200 may be a wire-embedded semiconductor device in which the first wire 88 is embedded in the film adhesive 10. Further, the first wire does not have to be entirely embedded, and it is sufficient that at least a part of the first wire is embedded.
  • the film adhesive 10 When the first semiconductor element Wa is not embedded in the film adhesive 10, the film adhesive 10 has a film thickness of 30 to 200 ⁇ m because the adhesiveness is high and the semiconductor device 200 can be thinned. It may be 40 to 150 ⁇ m, 40 to 100 ⁇ m, or 40 to 80 ⁇ m.
  • the substrate 14 is the organic substrate 90 having the circuit patterns 84 and 94 formed on the surface thereof at two locations.
  • the substrate 14 is not limited to this, and a metal substrate such as a lead frame is used. Also good.
  • the semiconductor device 200 has a configuration in which the second semiconductor element Waa is stacked on the first semiconductor element Wa and the semiconductor elements are stacked in two stages, the configuration of the semiconductor device is not limited thereto. I can't.
  • a third semiconductor element may be further stacked on the second semiconductor element Waa, or a plurality of semiconductor elements may be further stacked on the second semiconductor element Waa. As the number of stacked semiconductor elements increases, the capacity of the obtained semiconductor device can be increased.
  • the semiconductor element 102 with a film adhesive in which the film adhesive 10 is pasted on the second semiconductor element Waa is prepared before the crimping process. If the two semiconductor elements Waa are pressure-bonded to the substrate 14 via the film adhesive 10, the semiconductor element with a film adhesive as described above may not be prepared.
  • the adhesive sheet 100 shown in FIG. 8 is laminated
  • the adhesive sheet used at the time of lamination is not limited to this.
  • dicing and die bonding integrated adhesive sheets 120 and 130 shown in FIGS. 10 and 11 can be used. In this case, it is not necessary to attach the dicing tape 60 separately when dicing the semiconductor wafer.
  • the laminating step not the semiconductor wafer but a semiconductor element obtained by dividing the semiconductor wafer into pieces may be laminated on the adhesive sheet 100. In this case, the dicing process can be omitted.
  • YDF-8170C (trade name, manufactured by Toto Kasei Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent 159, liquid at room temperature).
  • VG-3101L (trade name, manufactured by Printec Co., Ltd., polyfunctional epoxy resin, epoxy equivalent 210, softening point 39-46 ° C.).
  • YDCN-700-10 (trade name, manufactured by Tohto Kasei Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent 210, softening point 75 to 85 ° C.)
  • HP-7200 (trade name, manufactured by DIC Corporation, dicyclopentadiene-containing epoxy resin, epoxy equivalent 247, softening point 55 to 65 ° C.).
  • PSM-4326 (trade name, manufactured by Gunei Chemical Industry Co., Ltd., hydroxyl group equivalent 105, softening point 118-122 ° C.).
  • Millex XLC-LL (trade name, manufactured by Mitsui Chemicals, Inc., phenol resin, hydroxyl group equivalent 175, softening point 77 ° C., water absorption 1 mass%, heating mass reduction rate 4 mass%).
  • Acrylic rubber HTR-860P-3CSP (trade name, manufactured by Nagase ChemteX Corp., weight average molecular weight 800,000, ratio of structural unit having glycidyl functional group 3%, Tg: -7 ° C.).
  • Acrylic rubber HTR-860P-30B-CHN (trade name, manufactured by Nagase ChemteX Corporation, weight average molecular weight 230,000, ratio of structural unit having glycidyl functional group 8%, Tg: ⁇ 7 ° C.).
  • Curesol 2PZ-CN (trade name, 1-cyanoethyl-2-phenylimidazole, manufactured by Shikoku Chemicals Co., Ltd.).
  • (Coupling agent) A-1160 (trade name, ⁇ -ureidopropyltriethoxysilane, manufactured by GE Toshiba Corporation).
  • A-189 (trade name, manufactured by GE Toshiba Corporation, ⁇ -mercaptopropyltrimethoxysilane).
  • the obtained varnish was filtered through a 100 mesh filter and vacuum degassed.
  • the varnish after the vacuum defoaming was applied onto a polyethylene terephthalate (PET) film having a thickness of 38 ⁇ m, which was subjected to a release treatment as a base film.
  • PET polyethylene terephthalate
  • the applied varnish was heat-dried in two stages of 90 ° C. for 5 minutes, followed by 140 ° C. for 5 minutes.
  • an adhesive sheet provided with a film adhesive having a thickness of 60 ⁇ m in a B-stage state on a PET film as a base film was obtained.
  • an adhesive sheet provided with a film adhesive having a thickness of 120 ⁇ m was obtained.
  • melt viscosity The melt viscosity of the film adhesive was evaluated by measuring the shear viscosity by the following method. A plurality of the adhesive sheets were prepared, laminated at 60 ° C., and a film adhesive was laminated on the base film so as to have a thickness of about 300 ⁇ m. The base film was peeled and removed from the laminated film adhesive and punched into a 10 mm square in the thickness direction to obtain a square laminate having a 10 mm square and a thickness of 300 ⁇ m.
  • a circular aluminum plate jig having a diameter of 8 mm was set in a dynamic viscoelasticity measuring apparatus ARES (manufactured by TA Instruments), and a laminated body of a film-like adhesive punched out was set here. Then, it measured while heating up to 150 degreeC with the temperature increase rate of 5 degree-C / min, giving 5% distortion at 35 degreeC, and recorded the value of 120 degreeC melt viscosity. The measurement results are shown in Table 2.
  • the film adhesive was heated in a pressure oven and the embedding after pressing was evaluated by the following method.
  • the film-like adhesive (thickness 120 ⁇ m) of the adhesive sheet obtained above was attached to a semiconductor wafer (8 inches) having a thickness of 50 ⁇ m at 70 ° C. Next, they were diced to 7.5 mm square to obtain a semiconductor element with a film adhesive (second semiconductor element).
  • a dicing / die bonding integrated film (trade name: HR-9004-10, manufactured by Hitachi Chemical Co., Ltd., thickness 10 ⁇ m) was attached to a semiconductor wafer (8 inches) having a thickness of 50 ⁇ m at 70 ° C.
  • a chip (first semiconductor element) with HR-9904-10 separated into pieces is pressure-bonded to an evaluation substrate having a maximum surface roughness of 6 ⁇ m under conditions of 130 ° C., 0.20 MPa, 2 seconds, 120 ° C., Heated for 2 hours and semi-cured.
  • the semiconductor element with a film adhesive was placed on the first semiconductor element thus obtained, and this was pressure-bonded under the conditions of 120 ° C., 0.20 MPa, and 2 seconds.
  • the alignment was performed so that the chip with HR-9904-10 that was previously crimped was disposed at the center of the semiconductor element with the film adhesive.
  • the obtained sample was put into a pressure oven, the pressure in the pressure oven was set to 0.7 MPa, the temperature was increased from 35 ° C. to 140 ° C. at a temperature increase rate of 3 ° C./min, and then at 140 ° C. for 30 minutes. Heated.
  • the evaluation sample thus obtained was analyzed with an ultrasonic imaging apparatus SAT (manufactured by Hitachi Construction Machinery, product number FS200II, probe: 25 MHz) to confirm the embeddability.
  • the evaluation criteria for embeddability are as follows. The evaluation results are shown in Table 2.
  • the die shear strength (adhesion strength) of the film adhesive was measured by the following method. First, the film-like adhesive (thickness 120 ⁇ m) of the adhesive sheet obtained above was attached to a semiconductor wafer having a thickness of 400 ⁇ m at 70 ° C. Next, they were diced to 5.0 mm square to obtain a semiconductor element with a film adhesive.
  • the film adhesive side of the separated semiconductor element with a film adhesive is 120 ° C., 0.1 MPa, 5 on a substrate coated with solder resist ink (trade name: AUS308, manufactured by Taiyo Ink Manufacturing Co., Ltd.). A sample was obtained by thermocompression bonding under the conditions for 2 seconds.
  • the adhesive of the obtained sample was cured by heating at 120 ° C. for 2 hours and at 170 ° C. for 3 hours. Further, the cured sample was left for 168 hours under the conditions of 85 ° C. and 60% RH. Thereafter, the sample was allowed to stand for 30 minutes under conditions of 25 ° C. and 50% RH, and the die shear strength was measured at 250 ° C., and this was taken as the adhesive strength.
  • the measurement results are shown in Table 2.
  • the reflow resistance of the film adhesive was evaluated by the following method.
  • An evaluation sample was produced in the same manner as the evaluation sample obtained by the evaluation of the embedding after heating with the pressure oven and after pressing.
  • the obtained evaluation sample was resin-sealed under the conditions of 175 ° C., 6.7 MPa, 90 seconds using a mold sealing material (trade name: CEL-9750ZHF10, manufactured by Hitachi Chemical Co., Ltd.), 175 ° C., The sealing material was cured under conditions of 5 hours to obtain a package.
  • the adhesive sheets of Examples 1 to 4 are superior in embedding property to the adhesive sheets of Comparative Examples 1 to 3, and there is no misalignment of the semiconductor elements. It was confirmed that reflowability was also excellent.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
PCT/JP2018/009043 2018-03-08 2018-03-08 半導体装置の製造方法及びフィルム状接着剤 WO2019171544A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201880090862.4A CN111819672A (zh) 2018-03-08 2018-03-08 半导体装置的制造方法及膜状粘接剂
SG11202008637UA SG11202008637UA (en) 2018-03-08 2018-03-08 Method for producing semiconductor device and film-like adhesive
KR1020207026916A KR20200128051A (ko) 2018-03-08 2018-03-08 반도체 장치의 제조 방법 및 필름형 접착제
JP2020504597A JP7115537B2 (ja) 2018-03-08 2018-03-08 半導体装置の製造方法及びフィルム状接着剤
PCT/JP2018/009043 WO2019171544A1 (ja) 2018-03-08 2018-03-08 半導体装置の製造方法及びフィルム状接着剤
TW108106384A TW201938720A (zh) 2018-03-08 2019-02-26 半導體裝置的製造方法及膜狀接著劑

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2018/009043 WO2019171544A1 (ja) 2018-03-08 2018-03-08 半導体装置の製造方法及びフィルム状接着剤

Publications (1)

Publication Number Publication Date
WO2019171544A1 true WO2019171544A1 (ja) 2019-09-12

Family

ID=67845945

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/009043 WO2019171544A1 (ja) 2018-03-08 2018-03-08 半導体装置の製造方法及びフィルム状接着剤

Country Status (6)

Country Link
JP (1) JP7115537B2 (zh)
KR (1) KR20200128051A (zh)
CN (1) CN111819672A (zh)
SG (1) SG11202008637UA (zh)
TW (1) TW201938720A (zh)
WO (1) WO2019171544A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014011257A (ja) * 2012-06-28 2014-01-20 Nitto Denko Corp 接着フィルム、半導体装置の製造方法及び半導体装置
JP2014175459A (ja) * 2013-03-08 2014-09-22 Hitachi Chemical Co Ltd 半導体装置及び半導体装置の製造方法
JP2015198117A (ja) * 2014-03-31 2015-11-09 日東電工株式会社 熱硬化型ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、半導体装置の製造方法、及び、半導体装置
JP2016139757A (ja) * 2015-01-29 2016-08-04 日立化成株式会社 接着剤組成物、回路部材接続用接着剤シート及び半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5236134B2 (ja) 2001-01-26 2013-07-17 日立化成株式会社 接着剤組成物、接着部材、半導体搭載用支持部材及び半導体装置等
JP2005103180A (ja) 2003-10-02 2005-04-21 Matsushita Electric Ind Co Ltd 洗濯機
JP5524465B2 (ja) 2007-10-24 2014-06-18 日立化成株式会社 接着シート及びこれを用いた半導体装置およびその製造方法
CN111630642B (zh) * 2018-01-30 2023-05-26 株式会社力森诺科 半导体装置的制造方法及膜状粘接剂

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014011257A (ja) * 2012-06-28 2014-01-20 Nitto Denko Corp 接着フィルム、半導体装置の製造方法及び半導体装置
JP2014175459A (ja) * 2013-03-08 2014-09-22 Hitachi Chemical Co Ltd 半導体装置及び半導体装置の製造方法
JP2015198117A (ja) * 2014-03-31 2015-11-09 日東電工株式会社 熱硬化型ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、半導体装置の製造方法、及び、半導体装置
JP2016139757A (ja) * 2015-01-29 2016-08-04 日立化成株式会社 接着剤組成物、回路部材接続用接着剤シート及び半導体装置の製造方法

Also Published As

Publication number Publication date
CN111819672A (zh) 2020-10-23
JPWO2019171544A1 (ja) 2021-02-18
KR20200128051A (ko) 2020-11-11
TW201938720A (zh) 2019-10-01
SG11202008637UA (en) 2020-10-29
JP7115537B2 (ja) 2022-08-09

Similar Documents

Publication Publication Date Title
JP6135202B2 (ja) 半導体装置及び半導体装置の製造方法
JP5736899B2 (ja) フィルム状接着剤、接着シート及び半導体装置
JP6133542B2 (ja) フィルム状接着剤、接着シート及び半導体装置
JP5428423B2 (ja) 半導体装置及びフィルム状接着剤
JP5834662B2 (ja) フィルム状接着剤、接着シート、半導体装置及びその製造方法
JP5924145B2 (ja) フィルム状接着剤、接着シート、及び半導体装置の製造方法
JP6222395B1 (ja) フィルム状接着剤及びダイシングダイボンディング一体型接着シート
JP6191799B1 (ja) 半導体装置、半導体装置の製造方法及びフィルム状接着剤
TWI774916B (zh) 半導體裝置的製造方法、膜狀接著劑及接著片
JP6443521B2 (ja) フィルム状接着剤及びダイシングダイボンディング一体型接着シート
WO2019151260A1 (ja) 半導体装置の製造方法及び接着フィルム
JP2012153851A (ja) 半導体装置及びフィルム状接着剤
JP6191800B1 (ja) フィルム状接着剤及びダイシングダイボンディング一体型接着シート
WO2019220540A1 (ja) 半導体装置、並びに、その製造に使用する熱硬化性樹脂組成物及びダイシングダイボンディング一体型テープ
WO2019150444A1 (ja) 半導体装置の製造方法、及びフィルム状接着剤
JP6768188B2 (ja) 接着フィルム用接着剤組成物及びその製造方法
WO2019171544A1 (ja) 半導体装置の製造方法及びフィルム状接着剤
JP7028264B2 (ja) フィルム状接着剤及びその製造方法、並びに半導体装置及びその製造方法
JP7140143B2 (ja) 半導体装置の製造方法、及びフィルム状接着剤
JP2013006899A (ja) 接着フィルム及びこれを用いた半導体装置
JP6213618B2 (ja) フィルム状接着剤、接着シート及び半導体装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18909150

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2020504597

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20207026916

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 18909150

Country of ref document: EP

Kind code of ref document: A1