WO2019148510A1 - Novel heterojunction avalanche photodiode - Google Patents
Novel heterojunction avalanche photodiode Download PDFInfo
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- WO2019148510A1 WO2019148510A1 PCT/CN2018/075345 CN2018075345W WO2019148510A1 WO 2019148510 A1 WO2019148510 A1 WO 2019148510A1 CN 2018075345 W CN2018075345 W CN 2018075345W WO 2019148510 A1 WO2019148510 A1 WO 2019148510A1
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- 230000005684 electric field Effects 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 105
- 230000000149 penetrating effect Effects 0.000 claims description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- 239000010703 silicon Substances 0.000 claims description 40
- 239000010409 thin film Substances 0.000 claims description 29
- 239000011241 protective layer Substances 0.000 claims description 26
- 238000005468 ion implantation Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 4
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 8
- 230000035515 penetration Effects 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 239000002019 doping agent Substances 0.000 abstract 5
- 230000007547 defect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
Definitions
- the invention relates to a novel heterojunction avalanche photodiode.
- a typical structure of a conventional heteroepitaxial avalanche photodiode includes a substrate 201, a first epitaxial layer 202, a second epitaxial layer 203, a third epitaxial layer 204, and a fourth epitaxial layer 205.
- the first epitaxial layer 202 has a first doping region 211, a first electrode contact region 212 is formed in the first doping region 211, and a second doping region 213 is formed on the second epitaxial layer 203.
- An anti-electric field penetrating protective layer 216 is formed on the layer 204, a gain region electric field control charge doping layer 217 is formed on the anti-electric field penetrating protective layer 216, and a second electrode contact region 218 is formed on the fourth epitaxial layer 205.
- the first epitaxial layer 202, the second epitaxial layer 203, and the third epitaxial layer 204 are silicon (Si) materials, and the fourth epitaxial layer 205 is a germanium (Ge) material. Due to the large lattice mismatch between the Ge material and the Si material, the Ge material forms a large number of defects and dislocations during the epitaxial process. When the electric field penetrates into the Ge material region under working bias conditions, a large darkness is formed. Current, which affects the detection signal-to-noise ratio and detection sensitivity.
- the object of the present invention is to solve the technical problem that the current heteroepitaxial avalanche photodiode has a large dark current due to the above structural defects, thereby affecting the detection signal-to-noise ratio and the detection sensitivity.
- the present invention provides a novel heterojunction avalanche photodiode comprising, in order from bottom to top, a substrate, a first epitaxial layer, a second epitaxial layer, a third epitaxial layer, and a fourth epitaxial layer, said fourth Forming an epitaxial layer on the third epitaxial layer by heteroepitaxial growth;
- first doping region Forming a first doping region on the first epitaxial layer, the first doping region comprising a first doping type doping;
- first electrode contact region Forming a first electrode contact region on the first epitaxial layer, the first electrode contact region comprising a first doping type doping;
- the top surface of the third epitaxial layer is formed with a patterned anti-electric field penetrating protective layer, and the patterned anti-electric field penetrating protective layer comprises a first doping amount of a second doping type doping;
- the top region of the third epitaxial layer is formed with an electric field penetrating via array region, and the electric field penetrating via array region includes a second doping type doping with a second doping amount;
- a second electrode contact region is formed on the fourth epitaxial layer, and the second electrode contact region includes a second doping type doping.
- the patterned anti-electric field penetrating protective layer is formed on the top region of the third epitaxial layer by an ion implantation or diffusion process.
- the electric field penetrating via array region is formed on the top region of the third epitaxial layer by an ion implantation or diffusion process.
- the second epitaxial layer is undoped, unintentionally doped or doped at a low concentration, and its background doping concentration is lower than 5E15 cm -3 .
- the third epitaxial layer is undoped, unintentionally doped or doped at a low concentration, and its background doping concentration is lower than 5E15 cm -3 .
- the substrate is one of a silicon substrate, a silicon-on-insulator substrate, a gallium arsenide substrate, an indium phosphide, a quartz substrate, a silicon carbide substrate, and sapphire.
- first epitaxial layer, the second epitaxial layer and the third epitaxial layer each comprise a first semiconductor material, the first semiconductor material being silicon, indium phosphide, gallium arsenide, aluminum nitride and gallium nitride One of them.
- the fourth epitaxial layer comprises a second semiconductor material
- the second semiconductor material is one of germanium, germanium silicon, indium gallium arsenide, indium gallium arsenide, indium gallium aluminum arsenide, and indium gallium nitride.
- the second doping amount of the electric field penetrating through-hole array region is lower than the first doping amount of the patterned anti-electric field penetrating protective layer.
- the electric field penetrating through-hole array region is surrounded by the patterned anti-electric field penetrating protective layer.
- the electric field penetrates the via array region to be uniformly distributed or non-uniformly distributed.
- the first doping type is N-type doping
- the second doping type is P-type doping
- a novel heterojunction avalanche photodiode of the present invention comprises a silicon-on-insulator substrate having a silicon first epitaxial layer on top of the silicon-on-insulator substrate, and the first epitaxial layer of the silicon by ion implantation Forming an N+ type first doped region in the layer, and forming an N++ type doped region in the N+ type first doped region by ion implantation, wherein the N++ type doped region is used to form an N-type first electrode contact region ;
- a P++ type doped region is formed on the upper portion of the fourth epitaxial layer of the tantalum film by ion implantation, and the P++ type doped region is used to form a P type second electrode contact region.
- the doping concentration of the N+ type first doping region is 5E17 cm -3 ;
- the second epitaxial layer of the intrinsic thin film silicon is an unintentionally doped region having a thickness of 100-300 nm and a doping concentration lower than 5E14 cm -3 ;
- the doping concentration of the N+ type second doping region is 5E17 cm -3 to 5E18 cm -3 ;
- the doping type of the intrinsic thin film silicon third epitaxial layer is unintentionally doped, and has a thickness of 400-3000 nm and a doping concentration of less than 5E14 cm -3 .
- Figure 1 is a schematic structural view of an embodiment of the present invention
- FIG. 2 is a schematic structural view of a conventional hetero-epitaxial avalanche photodiode
- FIG. 3 is a schematic structural view of a patterned anti-electric field penetrating protective layer and an electric field penetrating through-hole array region according to an embodiment of the present invention
- FIG. 4 is a diagram showing electric field distribution of a patterned anti-electric field penetrating protective layer and an electric field penetrating through-hole array region according to an embodiment of the present invention
- FIG. 5 is a schematic view showing the process of forming a patterned anti-electric field penetrating protective layer by ion implantation according to an embodiment of the present invention
- FIG. 6 is a schematic view showing the process of forming an electric field through-hole array region by ion implantation according to an embodiment of the present invention.
- the novel heterojunction avalanche photodiode of the present invention comprises a silicon-on-insulator substrate 101, and a silicon first epitaxial layer 102 is disposed on the top of the silicon-on-insulator substrate 101, and ion implantation is performed on the silicon.
- An N+ type first doping region 111 is formed in the first epitaxial layer 102, and an N++ type doping region 112 (re-N doping) is formed in the N+ type first doping region by ion implantation, and the N++ type doping region 112 is used.
- Forming an N-type first electrode contact region, that is, an N++-type doped region 112 is an N-type first electrode contact region 112;
- the intrinsic thin film silicon third epitaxial layer 104 is a multiplication layer/region 115;
- a P-type doped patterned anti-electric field penetrating protective layer 116 is formed on top of the intrinsic thin film silicon third epitaxial layer 104 by ion implantation, and P is formed on the patterned anti-electric field penetrating protective layer 116 by ion implantation.
- the doped electric field penetrates the via array region 117, and the electric field penetrating via array region 117 is surrounded by the patterned anti-electric field penetrating protective layer 116 (see FIG. 3) to form a patterned anti-electric field penetration protection.
- the doping concentration of layer 116 is higher than the doping concentration of the electric field penetrating via array region 117;
- a P++ type doped region 118 is formed on the upper portion of the fourth epitaxial layer 105 of the tantalum film by ion implantation, and the P++ type doped region 118 is used to form a P type second electrode contact region, that is, the P++ type doped region 118 is a P type second. Electrode contact region 118.
- the doping charge of the electric field penetrating the via array region 117 is exhausted, and the electric field penetrates Entering the fourth epitaxial layer 105 of the germanium film, the photo-generated carriers formed in the fourth epitaxial layer 105 of the germanium film are extracted by diffusion and drift and enter the intrinsic thin film silicon epitaxial layer 104;
- the anti-electric field penetrating protective layer 116 has a higher doping amount with respect to the electric field penetrating via array region 117, which cannot be depleted, thereby preventing the electric field from penetrating into the germanium film having a higher defect and misalignment distribution.
- the fourth epitaxial layer 105 suppresses the generation of dark current, thereby improving the detection signal-to-noise ratio and the detection sensitivity of the novel heterojunction avalanche photodiode.
- the doping concentration of the N+ type first doping region 111 is set to 5E17 cm -3 ; and the intrinsic thin film silicon second epitaxial layer 103 is unintentional.
- the doped region has a thickness of 100-300 nm and a doping concentration of less than 5E14 cm -3 ; the doping concentration of the N+-type second doping region 113 is set to 5E17 cm -3 to 5E18 cm -3 ; and the intrinsic thin film silicon third epitaxial layer 104
- the doping type is unintentional doping, the thickness is 400-3000 nm, and the doping concentration is lower than 5E14 cm -3 .
- the doping charge of the electric field penetrating the via array region is exhausted, and the electric field penetrates and enters
- the photo-generated carriers formed in the fourth epitaxial layer and the fourth epitaxial layer are extracted by diffusion and drift and enter the third epitaxial layer (or multiplication region);
- the protective layer has a higher doping amount, which cannot be depleted, thereby preventing the electric field from penetrating into the fourth epitaxial layer having a higher defect and misalignment distribution, suppressing the generation of dark current, thereby improving the present invention. Detect signal to noise ratio and detection sensitivity.
- the present invention is not limited to the above embodiments, and the technical solutions of the above various embodiments of the present invention can be cross-combined with each other to form a new technical solution, and the technical solutions formed by the equivalent replacement are all within the protection scope of the present invention. .
Abstract
A heterojunction avalanche photodiode, comprising a substrate (101), a firs epitaxial layer (102), a second epitaxial layer (103), a third epitaxial layer (104), and a fourth epitaxial layer (105). The fourth epitaxial layer (105) is formed on the third epitaxial layer (104) by means of heteroepitaxial growth; a first doped area (111) is formed on the first epitaxial layer (102), and the first doped area (111) comprises a dopant of a first doping type; a first electrode contact area (112) is formed on the first epitaxial layer (102), and the first electrode contact area (112) comprises a dopant of the first doping type; a second doped area (113) is formed on the second epitaxial layer (103), and the second doped area (113) comprises a dopant of the first doping type; a patterned anti-electric field penetration protection layer (116) is formed on a top area of the third epitaxial layer (104), and the patterned anti-electric field penetration protection layer (116) comprises a dopant of a second doping type having a first doping amount; an electric field penetration through hole array area (117) is formed on the top area of the third epitaxial layer (104), and the electric field penetration through hole array area (117) comprises a dopant of the second doping type having a second doping amount. The photodiode can reduce the dark current of a device and improve the detection sensitivity.
Description
本发明涉及一种新型异质结雪崩光电二极管。The invention relates to a novel heterojunction avalanche photodiode.
如图2所示，为一种传统的异质外延雪崩光电二极管的典型结构，包括衬底201、第一外延层202、第二外延层203、第三外延层204和第四外延层205，在第一外延层202具有第一掺杂区211，在第一掺杂区211中形成有第一电极接触区212；在第二外延层203上具有第二掺杂区213，在第三外延层204上形成有防电场穿透保护层216，在防电场穿透保护层216上形成有增益区电场控制电荷掺杂层217，在第四外延层205上形成有第二电极接触区218。其中第一外延层202、第二外延层203和第三外延层204为硅(Si)材料，第四外延层205为锗(Ge)材料。由于Ge材料和Si材料之间存在较大的晶格失配，导致Ge材料在外延过程中形成大量的缺陷和错位，在工作偏压条件下电场渗透进入Ge材料区域时会形成较大的暗电流，从而影响探测信噪比和检测灵敏度。As shown in FIG. 2, a typical structure of a conventional heteroepitaxial avalanche photodiode includes a substrate 201, a first epitaxial layer 202, a second epitaxial layer 203, a third epitaxial layer 204, and a fourth epitaxial layer 205. The first epitaxial layer 202 has a first doping region 211, a first electrode contact region 212 is formed in the first doping region 211, and a second doping region 213 is formed on the second epitaxial layer 203. An anti-electric field penetrating protective layer 216 is formed on the layer 204, a gain region electric field control charge doping layer 217 is formed on the anti-electric field penetrating protective layer 216, and a second electrode contact region 218 is formed on the fourth epitaxial layer 205. The first epitaxial layer 202, the second epitaxial layer 203, and the third epitaxial layer 204 are silicon (Si) materials, and the fourth epitaxial layer 205 is a germanium (Ge) material. Due to the large lattice mismatch between the Ge material and the Si material, the Ge material forms a large number of defects and dislocations during the epitaxial process. When the electric field penetrates into the Ge material region under working bias conditions, a large darkness is formed. Current, which affects the detection signal-to-noise ratio and detection sensitivity.
发明内容Summary of the invention
本发明的目的是解决目前异质外延雪崩光电二极管由于上述结构缺陷导致存在较大暗电流，从而影响探测信噪比和检测灵敏度的技术问题。The object of the present invention is to solve the technical problem that the current heteroepitaxial avalanche photodiode has a large dark current due to the above structural defects, thereby affecting the detection signal-to-noise ratio and the detection sensitivity.
为实现以上目的，本发明提供一种新型异质结雪崩光电二极管，从下至上依次包括衬底、第一外延层、第二外延层、第三外延层和第四外延层，所述第四外延层通过异质外延生长形成于所述第三外延层之上；To achieve the above object, the present invention provides a novel heterojunction avalanche photodiode comprising, in order from bottom to top, a substrate, a first epitaxial layer, a second epitaxial layer, a third epitaxial layer, and a fourth epitaxial layer, said fourth Forming an epitaxial layer on the third epitaxial layer by heteroepitaxial growth;
所述第一外延层上形成有第一掺杂区，所述第一掺杂区包含第一掺杂类型掺杂；Forming a first doping region on the first epitaxial layer, the first doping region comprising a first doping type doping;
所述第一外延层上形成有第一电极接触区，所述第一电极接触区包含第一掺杂类型掺杂；Forming a first electrode contact region on the first epitaxial layer, the first electrode contact region comprising a first doping type doping;
所述第二外延层上形成有第二掺杂区，所述第二掺杂区包含第一掺杂类型掺杂；Forming a second doping region on the second epitaxial layer, the second doping region comprising a first doping type doping;
所述第三外延层顶部区域形成有制作有图形的防电场穿透保护层，所述制作有图形的防电场穿透保护层包含有第一掺杂剂量的第二掺杂类型掺杂；The top surface of the third epitaxial layer is formed with a patterned anti-electric field penetrating protective layer, and the patterned anti-electric field penetrating protective layer comprises a first doping amount of a second doping type doping;
所述第三外延层顶部区域形成有电场穿透通孔阵列区，所述电场 穿透通孔阵列区包含有第二掺杂剂量的第二掺杂类型掺杂；The top region of the third epitaxial layer is formed with an electric field penetrating via array region, and the electric field penetrating via array region includes a second doping type doping with a second doping amount;
所述第四外延层上形成有第二电极接触区，所述第二电极接触区包含第二掺杂类型掺杂。A second electrode contact region is formed on the fourth epitaxial layer, and the second electrode contact region includes a second doping type doping.
进一步地，所述制作有图形的防电场穿透保护层通过离子注入或扩散工艺形成于所述第三外延层顶部区域。Further, the patterned anti-electric field penetrating protective layer is formed on the top region of the third epitaxial layer by an ion implantation or diffusion process.
进一步地，所述电场穿透通孔阵列区通过离子注入或扩散工艺形成于所述第三外延层顶部区域。Further, the electric field penetrating via array region is formed on the top region of the third epitaxial layer by an ion implantation or diffusion process.
进一步地，所述第二外延层未掺杂、非故意掺杂或低浓度掺杂，其背景掺杂浓度低于5E15cm
-3。
Further, the second epitaxial layer is undoped, unintentionally doped or doped at a low concentration, and its background doping concentration is lower than 5E15 cm -3 .
进一步地，所述第三外延层未掺杂、非故意掺杂或低浓度掺杂，其背景掺杂浓度低于5E15cm
-3。
Further, the third epitaxial layer is undoped, unintentionally doped or doped at a low concentration, and its background doping concentration is lower than 5E15 cm -3 .
进一步地，所述衬底为硅衬底、绝缘体上硅衬底、砷化镓衬底、磷化铟称帝、石英衬底、碳化硅衬底和蓝宝石中的一种。Further, the substrate is one of a silicon substrate, a silicon-on-insulator substrate, a gallium arsenide substrate, an indium phosphide, a quartz substrate, a silicon carbide substrate, and sapphire.
进一步地，所述第一外延层、第二外延层和第三外延层均包含第一半导体材料，所述第一半导体材料是硅、磷化铟、砷化镓、氮化铝和氮化镓中的一种。Further, the first epitaxial layer, the second epitaxial layer and the third epitaxial layer each comprise a first semiconductor material, the first semiconductor material being silicon, indium phosphide, gallium arsenide, aluminum nitride and gallium nitride One of them.
进一步地，所述第四层外延层包含第二半导体材料，所述第二半导体材料是锗、锗硅、铟镓砷、铟镓砷磷、铟镓铝砷和铟镓氮中的一种。Further, the fourth epitaxial layer comprises a second semiconductor material, and the second semiconductor material is one of germanium, germanium silicon, indium gallium arsenide, indium gallium arsenide, indium gallium aluminum arsenide, and indium gallium nitride.
进一步地，所述电场穿透通孔阵列区的所述第二掺杂剂量低于所述制作有图形的防电场穿透保护层的所述第一掺杂剂量。Further, the second doping amount of the electric field penetrating through-hole array region is lower than the first doping amount of the patterned anti-electric field penetrating protective layer.
进一步地，所述电场穿透通孔阵列区被所述制作有图形的防电场穿透保护层所包围。Further, the electric field penetrating through-hole array region is surrounded by the patterned anti-electric field penetrating protective layer.
进一步地，所述电场穿透通孔阵列区为均匀分布或非均匀分布。Further, the electric field penetrates the via array region to be uniformly distributed or non-uniformly distributed.
进一步地，所述第一掺杂类型为N型掺杂，所述第二掺杂类型为P型掺杂。Further, the first doping type is N-type doping, and the second doping type is P-type doping.
根据本发明的一个方面，本发明的新型异质结雪崩光电二极管包括绝缘体上硅衬底，所述绝缘体上硅衬底顶部设有硅第一外延层，通过离子注入在所述硅第一外延层中形成N+型第一掺杂区，再通过离子注入在所述N+型第一掺杂区中形成N++型掺杂区，所述N++型掺杂区用于制作N型第一电极接触区；According to an aspect of the invention, a novel heterojunction avalanche photodiode of the present invention comprises a silicon-on-insulator substrate having a silicon first epitaxial layer on top of the silicon-on-insulator substrate, and the first epitaxial layer of the silicon by ion implantation Forming an N+ type first doped region in the layer, and forming an N++ type doped region in the N+ type first doped region by ion implantation, wherein the N++ type doped region is used to form an N-type first electrode contact region ;
通过外延生长在所述硅第一外延层上方形成本征薄膜硅第二外延层；Forming an intrinsic thin film silicon second epitaxial layer over the first epitaxial layer of silicon by epitaxial growth;
通过离子注入在所述本征薄膜硅第二外延层上形成N+型第二掺杂区；Forming an N+ type second doped region on the second epitaxial layer of the intrinsic thin film silicon by ion implantation;
通过外延生长在所述本征薄膜硅第二外延层上形成本征薄膜硅第 三外延层；Forming an intrinsic thin film silicon third epitaxial layer on the second epitaxial layer of the intrinsic thin film silicon by epitaxial growth;
通过离子注入在所述本征薄膜硅第三外延层顶部形成P型掺杂的所述制作有图形的防电场穿透保护层，通过离子注入在所述制作有图形的防电场穿透保护层上形成P型掺杂的所述电场穿透通孔阵列区，所述制作有图形的防电场穿透保护层的掺杂浓度高于所述电场穿透通孔阵列区的掺杂浓度；Forming a patterned P-type anti-electric field penetrating protective layer on top of the intrinsic thin film silicon third epitaxial layer by ion implantation, and forming a patterned anti-electric field penetrating protective layer by ion implantation Forming the P-type doped electric field through the via array region, the doping concentration of the patterned anti-electric field penetrating protective layer being higher than the doping concentration of the electric field penetrating via array region;
通过选择性外延生长在所述本征薄膜硅第三外延层上形成锗薄膜第四外延层；Forming a fourth epitaxial layer of germanium thin film on the third epitaxial layer of the intrinsic thin film silicon by selective epitaxial growth;
通过离子注入在所述锗薄膜第四外延层上部形成P++型掺杂区，所述P++型掺杂区用于制作P型第二电极接触区。A P++ type doped region is formed on the upper portion of the fourth epitaxial layer of the tantalum film by ion implantation, and the P++ type doped region is used to form a P type second electrode contact region.
进一步地，所述N+型第一掺杂区的掺杂浓度为5E17cm
-3；
Further, the doping concentration of the N+ type first doping region is 5E17 cm -3 ;
所述本征薄膜硅第二外延层为非故意掺杂区，其厚度为100-300nm，掺杂浓度低于5E14cm
-3；
The second epitaxial layer of the intrinsic thin film silicon is an unintentionally doped region having a thickness of 100-300 nm and a doping concentration lower than 5E14 cm -3 ;
所述N+型第二掺杂区的掺杂浓度为5E17cm
-3～5E18cm
-3；
The doping concentration of the N+ type second doping region is 5E17 cm -3 to 5E18 cm -3 ;
所述本征薄膜硅第三外延层的掺杂类型非故意掺杂，其厚度为400-3000nm，掺杂浓度低于5E14cm
-3。
The doping type of the intrinsic thin film silicon third epitaxial layer is unintentionally doped, and has a thickness of 400-3000 nm and a doping concentration of less than 5E14 cm -3 .
下面结合附图对本发明的新型异质结雪崩光电二极管作进一步说明。The novel heterojunction avalanche photodiode of the present invention will be further described below with reference to the accompanying drawings.
图1是本发明一个实施例的结构示意图；Figure 1 is a schematic structural view of an embodiment of the present invention;
图2是传统异质外延雪崩光电二极管的结构示意图；2 is a schematic structural view of a conventional hetero-epitaxial avalanche photodiode;
图3是本发明一个实施例的制作有图形的防电场穿透保护层和电场穿透通孔阵列区的结构示意图；3 is a schematic structural view of a patterned anti-electric field penetrating protective layer and an electric field penetrating through-hole array region according to an embodiment of the present invention;
图4是本发明一个实施例的制作有图形的防电场穿透保护层和电场穿透通孔阵列区的电场分布图；4 is a diagram showing electric field distribution of a patterned anti-electric field penetrating protective layer and an electric field penetrating through-hole array region according to an embodiment of the present invention;
图5是本发明一个实施例的通过离子注入形成制作有图形的防电场穿透保护层的工艺原理图；5 is a schematic view showing the process of forming a patterned anti-electric field penetrating protective layer by ion implantation according to an embodiment of the present invention;
图6是本发明一个实施例的通过离子注入形成电场穿透通孔阵列区的工艺原理图。6 is a schematic view showing the process of forming an electric field through-hole array region by ion implantation according to an embodiment of the present invention.
实施例1Example 1
如图1、3-6所示，本发明的新型异质结雪崩光电二极管，包括绝缘体上硅衬底101，绝缘体上硅衬底101顶部设有硅第一外延层102，通过离子注入在硅第一外延层102中形成N+型第一掺杂区111，再通 过离子注入在N+型第一掺杂区中形成N++型掺杂区112(重新N掺杂)，N++型掺杂区112用于制作N型第一电极接触区，即N++型掺杂区112即为N型第一电极接触区112；As shown in FIGS. 1 and 3-6, the novel heterojunction avalanche photodiode of the present invention comprises a silicon-on-insulator substrate 101, and a silicon first epitaxial layer 102 is disposed on the top of the silicon-on-insulator substrate 101, and ion implantation is performed on the silicon. An N+ type first doping region 111 is formed in the first epitaxial layer 102, and an N++ type doping region 112 (re-N doping) is formed in the N+ type first doping region by ion implantation, and the N++ type doping region 112 is used. Forming an N-type first electrode contact region, that is, an N++-type doped region 112 is an N-type first electrode contact region 112;
通过外延生长在硅第一外延层102上方形成本征薄膜硅第二外延层103；Forming an intrinsic thin film silicon second epitaxial layer 103 over the silicon first epitaxial layer 102 by epitaxial growth;
通过离子注入在本征薄膜硅第二外延层103上形成N+型第二掺杂区113；Forming an N+ type second doped region 113 on the intrinsic thin film silicon second epitaxial layer 103 by ion implantation;
通过外延生长在本征薄膜硅第二外延层103上形成本征薄膜硅第三外延层104，本征薄膜硅第三外延层104即倍增层/区115；Forming an intrinsic thin film silicon third epitaxial layer 104 on the intrinsic thin film silicon second epitaxial layer 103 by epitaxial growth, the intrinsic thin film silicon third epitaxial layer 104 is a multiplication layer/region 115;
通过离子注入在本征薄膜硅第三外延层104顶部形成P型掺杂的制作有图形的防电场穿透保护层116，通过离子注入在制作有图形的防电场穿透保护层116上形成P型掺杂的电场穿透通孔阵列区117，电场穿透通孔阵列区117被制作有图形的防电场穿透保护层116所包围(参见图3)，制作有图形的防电场穿透保护层116的掺杂浓度高于电场穿透通孔阵列区117的掺杂浓度；A P-type doped patterned anti-electric field penetrating protective layer 116 is formed on top of the intrinsic thin film silicon third epitaxial layer 104 by ion implantation, and P is formed on the patterned anti-electric field penetrating protective layer 116 by ion implantation. The doped electric field penetrates the via array region 117, and the electric field penetrating via array region 117 is surrounded by the patterned anti-electric field penetrating protective layer 116 (see FIG. 3) to form a patterned anti-electric field penetration protection. The doping concentration of layer 116 is higher than the doping concentration of the electric field penetrating via array region 117;
通过选择性外延生长在本征薄膜硅第三外延层104上形成锗薄膜第四外延层105；Forming a germanium thin film fourth epitaxial layer 105 on the intrinsic thin film silicon third epitaxial layer 104 by selective epitaxial growth;
通过离子注入在锗薄膜第四外延层105上部形成P++型掺杂区118，P++型掺杂区118用于制作P型第二电极接触区，即P++型掺杂区118即为P型第二电极接触区118。A P++ type doped region 118 is formed on the upper portion of the fourth epitaxial layer 105 of the tantalum film by ion implantation, and the P++ type doped region 118 is used to form a P type second electrode contact region, that is, the P++ type doped region 118 is a P type second. Electrode contact region 118.
当对N型第一电极接触区112和P型第二电极接触区118之间施加合适方向的工作偏压时，电场穿透通孔阵列区117的掺杂电荷被耗尽，电场穿透并进入锗薄膜第四外延层105，锗薄膜第四外延层105中所形成的光生载流子通过扩散和漂移作用被提取出来并进入本征薄膜硅第三外延层104；而由于制作有图形的防电场穿透保护层116相对于电场穿透通孔阵列区117具有更高的掺杂剂量，其并不能够被耗尽，从而防止电场穿透进入到具有较高缺陷和错位分布的锗薄膜第四外延层105，抑制了暗电流的产生，从而提高本新型异质结雪崩光电二极管的探测信噪比和检测灵敏度。When a working bias is applied between the N-type first electrode contact region 112 and the P-type second electrode contact region 118, the doping charge of the electric field penetrating the via array region 117 is exhausted, and the electric field penetrates Entering the fourth epitaxial layer 105 of the germanium film, the photo-generated carriers formed in the fourth epitaxial layer 105 of the germanium film are extracted by diffusion and drift and enter the intrinsic thin film silicon epitaxial layer 104; The anti-electric field penetrating protective layer 116 has a higher doping amount with respect to the electric field penetrating via array region 117, which cannot be depleted, thereby preventing the electric field from penetrating into the germanium film having a higher defect and misalignment distribution. The fourth epitaxial layer 105 suppresses the generation of dark current, thereby improving the detection signal-to-noise ratio and the detection sensitivity of the novel heterojunction avalanche photodiode.
实施例2Example 2
为了进一步提高本发明抑制暗电流的性能，在实施例1的基础上，将N+型第一掺杂区111的掺杂浓度定为5E17cm
-3；本征薄膜硅第二外延层103为非故意掺杂区，厚度为100-300nm，掺杂浓度低于5E14cm
-3；N+型第二掺杂区113的掺杂浓度定为5E17cm
-3～5E18cm
-3；本征薄膜硅第三外延层104的掺杂类型为非故意掺杂，厚度为400-3000nm，掺杂浓度低于5E14cm
-3。
In order to further improve the performance of the present invention for suppressing dark current, on the basis of Embodiment 1, the doping concentration of the N+ type first doping region 111 is set to 5E17 cm -3 ; and the intrinsic thin film silicon second epitaxial layer 103 is unintentional. The doped region has a thickness of 100-300 nm and a doping concentration of less than 5E14 cm -3 ; the doping concentration of the N+-type second doping region 113 is set to 5E17 cm -3 to 5E18 cm -3 ; and the intrinsic thin film silicon third epitaxial layer 104 The doping type is unintentional doping, the thickness is 400-3000 nm, and the doping concentration is lower than 5E14 cm -3 .
根据本发明，当对第一电极接触区和第二电极接触区之间施加合适方向的工作偏压时，所述电场穿透通孔阵列区的掺杂电荷被耗尽，电场穿透并进入所述第四外延层，第四外延层中所形成的光生载流子通过扩散和漂移作用被提取出来并进入第三外延层(或称倍增区)；而由于制作有图形的防电场穿透保护层具有更高的掺杂剂量，其并不能够被耗尽，从而防止电场穿透进入到具有较高缺陷和错位分布的第四外延层，抑制了暗电流的产生，从而提高本发明的探测信噪比和检测灵敏度。According to the present invention, when a working bias of a suitable direction is applied between the first electrode contact region and the second electrode contact region, the doping charge of the electric field penetrating the via array region is exhausted, and the electric field penetrates and enters The photo-generated carriers formed in the fourth epitaxial layer and the fourth epitaxial layer are extracted by diffusion and drift and enter the third epitaxial layer (or multiplication region); The protective layer has a higher doping amount, which cannot be depleted, thereby preventing the electric field from penetrating into the fourth epitaxial layer having a higher defect and misalignment distribution, suppressing the generation of dark current, thereby improving the present invention. Detect signal to noise ratio and detection sensitivity.
本发明的不局限于上述实施例，本发明的上述各个实施例的技术方案彼此可以交叉组合形成新的技术方案，另外凡采用等同替换形成的技术方案，均落在本发明要求的保护范围内。The present invention is not limited to the above embodiments, and the technical solutions of the above various embodiments of the present invention can be cross-combined with each other to form a new technical solution, and the technical solutions formed by the equivalent replacement are all within the protection scope of the present invention. .
Claims (10)
- 新型异质结雪崩光电二极管，其特征在于，从下至上依次包括衬底、第一外延层、第二外延层、第三外延层和第四外延层，所述第四外延层通过异质外延生长形成于所述第三外延层之上；A novel heterojunction avalanche photodiode is characterized in that, from bottom to top, a substrate, a first epitaxial layer, a second epitaxial layer, a third epitaxial layer and a fourth epitaxial layer are sequentially arranged, and the fourth epitaxial layer passes through the heteroepitaxial layer Growing on top of the third epitaxial layer;所述第一外延层上形成有第一掺杂区，所述第一掺杂区包含第一掺杂类型掺杂；Forming a first doping region on the first epitaxial layer, the first doping region comprising a first doping type doping;所述第一外延层上形成有第一电极接触区，所述第一电极接触区包含第一掺杂类型掺杂；Forming a first electrode contact region on the first epitaxial layer, the first electrode contact region comprising a first doping type doping;所述第二外延层上形成有第二掺杂区，所述第二掺杂区包含第一掺杂类型掺杂；Forming a second doping region on the second epitaxial layer, the second doping region comprising a first doping type doping;所述第三外延层顶部区域形成有制作有图形的防电场穿透保护层，所述制作有图形的防电场穿透保护层包含有第一掺杂剂量的第二掺杂类型掺杂；The top surface of the third epitaxial layer is formed with a patterned anti-electric field penetrating protective layer, and the patterned anti-electric field penetrating protective layer comprises a first doping amount of a second doping type doping;所述第三外延层顶部区域形成有电场穿透通孔阵列区，所述电场穿透通孔阵列区包含有第二掺杂剂量的第二掺杂类型掺杂；The top region of the third epitaxial layer is formed with an electric field penetrating via array region, and the electric field penetrating via array region includes a second doping type doping of a second doping amount;所述第四外延层上形成有第二电极接触区，所述第二电极接触区包含第二掺杂类型掺杂。A second electrode contact region is formed on the fourth epitaxial layer, and the second electrode contact region includes a second doping type doping.
- 根据权利要求1所述的新型异质结雪崩光电二极管，其特征在于，所述制作有图形的防电场穿透保护层通过离子注入或扩散工艺形成于所述第三外延层顶部区域；The novel heterojunction avalanche photodiode according to claim 1, wherein the patterned anti-electric field penetrating protective layer is formed on the top region of the third epitaxial layer by an ion implantation or diffusion process;所述电场穿透通孔阵列区通过离子注入或扩散等工艺形成于所述第三外延层顶部区域。The electric field penetrating via array region is formed in a top region of the third epitaxial layer by a process such as ion implantation or diffusion.
- 根据权利要求1所述的新型异质结雪崩光电二极管，其特征在于，所述第二外延层未掺杂、非故意掺杂或低浓度掺杂，其背景掺杂浓度低于5E15cm -3； The novel heterojunction avalanche photodiode according to claim 1, wherein the second epitaxial layer is undoped, unintentionally doped or doped at a low concentration, and the background doping concentration is lower than 5E15 cm -3 ;所述第三外延层未掺杂、非故意掺杂或低浓度掺杂，其背景掺杂浓度低于5E15cm -3。 The third epitaxial layer is undoped, unintentionally doped or doped at a low concentration, and its background doping concentration is lower than 5E15 cm -3 .
- 根据权利要求1所述的新型异质结雪崩光电二极管，其特征在于，所述衬底为硅衬底、绝缘体上硅衬底、砷化镓衬底、磷化铟称帝、石英衬底、碳化硅衬底和蓝宝石中的一种。The novel heterojunction avalanche photodiode according to claim 1, wherein the substrate is a silicon substrate, a silicon-on-insulator substrate, a gallium arsenide substrate, an indium phosphide alloy, a quartz substrate, One of a silicon carbide substrate and sapphire.
- 根据权利要求1所述的新型异质结雪崩光电二极管，其特征在于，所述第一外延层、第二外延层和第三外延层均包含第一半导体材料，所述第一半导体材料是硅、磷化铟、砷化镓、氮化铝和氮化镓中的一 种；A novel heterojunction avalanche photodiode according to claim 1 wherein said first epitaxial layer, said second epitaxial layer and said third epitaxial layer each comprise a first semiconductor material, said first semiconductor material being silicon One of indium phosphide, gallium arsenide, aluminum nitride, and gallium nitride;所述第四层外延层包含第二半导体材料，所述第二半导体材料是锗、锗硅、铟镓砷、铟镓砷磷、铟镓铝砷和铟镓氮中的一种。The fourth epitaxial layer comprises a second semiconductor material, one of germanium, germanium silicon, indium gallium arsenide, indium gallium arsenide phosphorus, indium gallium aluminum arsenic, and indium gallium nitride.
- 根据权利要求1所述的新型异质结雪崩光电二极管，其特征在于，所述电场穿透通孔阵列区的所述第二掺杂剂量低于所述制作有图形的防电场穿透保护层的所述第一掺杂剂量。The novel heterojunction avalanche photodiode according to claim 1, wherein said second doping amount of said electric field penetrating via array region is lower than said patterned anti-electric field penetrating protective layer The first doping amount.
- 根据权利要求1所述的新型异质结雪崩光电二极管，其特征在于，所述电场穿透通孔阵列区被所述制作有图形的防电场穿透保护层所包围。The novel heterojunction avalanche photodiode of claim 1 wherein said electric field penetrating via array region is surrounded by said patterned anti-electric field penetrating protective layer.
- 根据权利要求1所述的新型异质结雪崩光电二极管，其特征在于，所述电场穿透通孔阵列区为均匀分布或非均匀分布；The novel heterojunction avalanche photodiode according to claim 1, wherein the electric field penetrating via array region is uniformly distributed or non-uniformly distributed;所述第一掺杂类型为N型掺杂，所述第二掺杂类型为P型掺杂。The first doping type is N-type doping, and the second doping type is P-type doping.
- 新型异质结雪崩光电二极管，其特征在于，包括绝缘体上硅衬底，所述绝缘体上硅衬底顶部设有硅第一外延层，通过离子注入在所述硅第一外延层中形成N+型第一掺杂区，再通过离子注入在所述N+型第一掺杂区中形成N++型掺杂区，所述N++型掺杂区用于制作N型第一电极接触区；A novel heterojunction avalanche photodiode comprising: a silicon-on-insulator substrate having a first epitaxial layer of silicon disposed on top of the silicon-on-insulator substrate, and forming an N+ type in the first epitaxial layer of silicon by ion implantation a first doped region, and then an N++ type doped region is formed in the N+ type first doped region by ion implantation, and the N++ type doped region is used to form an N type first electrode contact region;通过外延生长在所述硅第一外延层上方形成本征薄膜硅第二外延层；Forming an intrinsic thin film silicon second epitaxial layer over the first epitaxial layer of silicon by epitaxial growth;通过离子注入在所述本征薄膜硅第二外延层上形成N+型第二掺杂区；Forming an N+ type second doped region on the second epitaxial layer of the intrinsic thin film silicon by ion implantation;通过外延生长在所述本征薄膜硅第二外延层上形成本征薄膜硅第三外延层；Forming an intrinsic thin film silicon third epitaxial layer on the second epitaxial layer of the intrinsic thin film silicon by epitaxial growth;通过离子注入在所述本征薄膜硅第三外延层顶部形成P型掺杂的所述制作有图形的防电场穿透保护层，通过离子注入在所述制作有图形的防电场穿透保护层上形成P型掺杂的所述电场穿透通孔阵列区，所述制作有图形的防电场穿透保护层的掺杂浓度高于所述电场穿透通孔阵列区的掺杂浓度；Forming a patterned P-type anti-electric field penetrating protective layer on top of the intrinsic thin film silicon third epitaxial layer by ion implantation, and forming a patterned anti-electric field penetrating protective layer by ion implantation Forming the P-type doped electric field through the via array region, the doping concentration of the patterned anti-electric field penetrating protective layer being higher than the doping concentration of the electric field penetrating via array region;通过选择性外延生长在所述本征薄膜硅第三外延层上形成锗薄膜第四外延层；Forming a fourth epitaxial layer of germanium thin film on the third epitaxial layer of the intrinsic thin film silicon by selective epitaxial growth;通过离子注入在所述锗薄膜第四外延层上部形成P++型掺杂区，所述P++型掺杂区用于制作P型第二电极接触区。A P++ type doped region is formed on the upper portion of the fourth epitaxial layer of the tantalum film by ion implantation, and the P++ type doped region is used to form a P type second electrode contact region.
- 根据权利要求9所述的新型异质结雪崩光电二极管，其特征在于，所述N+型第一掺杂区的掺杂浓度为5E17cm -3； The novel heterojunction avalanche photodiode according to claim 9, wherein the N+ type first doped region has a doping concentration of 5E17 cm -3 ;所述本征薄膜硅第二外延层为非故意掺杂区，其厚度为100-300nm，掺杂浓度低于5E14cm -3； The second epitaxial layer of the intrinsic thin film silicon is an unintentionally doped region having a thickness of 100-300 nm and a doping concentration lower than 5E14 cm -3 ;所述N+型第二掺杂区的掺杂浓度为5E17cm -3～5E18cm -3；所述本征薄膜硅第三外延层的掺杂类型非故意掺杂，其厚度为400-3000nm，掺杂浓度低于5E14cm -3。 The doping concentration of the N+ type second doping region is 5E17 cm -3 to 5E18 cm -3 ; the doping type of the intrinsic thin film silicon third epitaxial layer is unintentionally doped, and the thickness thereof is 400-3000 nm, doping The concentration is lower than 5E14cm -3 .
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