CN116666485B - Near infrared detector and preparation method thereof - Google Patents
Near infrared detector and preparation method thereof Download PDFInfo
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- CN116666485B CN116666485B CN202310841341.0A CN202310841341A CN116666485B CN 116666485 B CN116666485 B CN 116666485B CN 202310841341 A CN202310841341 A CN 202310841341A CN 116666485 B CN116666485 B CN 116666485B
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- 238000002360 preparation method Methods 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 239000000463 material Substances 0.000 claims abstract description 25
- 150000002500 ions Chemical class 0.000 claims abstract description 18
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 11
- -1 silicon ions Chemical class 0.000 claims abstract description 11
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000005468 ion implantation Methods 0.000 claims description 22
- 238000002161 passivation Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 20
- 229910005542 GaSb Inorganic materials 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a near infrared detection device, comprising: and the substrate comprises a doped region and an undoped region, the material of the substrate comprises gallium antimonide, the doped region is arranged on the surface of the substrate and extends downwards to a first depth from the surface of the substrate, ions doped in the doped region comprise germanium and/or silicon ions, the undoped region is used for removing the rest part of the doped region of the substrate, and a planar near infrared detector structure is formed by injecting ions downwards from the surface of the substrate. The device has simple and practical structure and good light responsivity, and can be widely applied to various actual scenes.
Description
Technical Field
The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a near infrared detector.
Background
The III-V semiconductor compound is a core material of a semiconductor optoelectronic device and can be well applied to semiconductor optoelectronic chips such as lasers, detectors and the like. The existing semiconductor detector often adopts an epitaxial structure grown on a substrate as a light absorption layer of the detector, and the grown material can cause lattice mismatch, and on a device structure, an epitaxially grown mesa structure has the problems of uneven thickness and the like on a film step covering layer, and has the problems of line width limitation and the like on high-resolution and small-size device mesa etching, and can also cause the problems of high surface coincidence rate and high leakage current.
Disclosure of Invention
Technical scheme (one)
An embodiment of the present invention provides a near infrared detector including: and the substrate comprises a doped region and an undoped region, the material of the substrate comprises gallium antimonide, the doped region is arranged on the surface of the substrate and extends downwards to a first depth from the surface of the substrate, ions doped in the doped region comprise germanium and/or silicon ions, and the undoped region is the rest of the doped region removed from the substrate.
Optionally, the near infrared detector further comprises: a passivation layer covering the surface of the substrate and growing upwards from the surface of the substrate to a first height, wherein the material of the passivation layer comprises SiO 2 The range of the first height includes 200nm to 500nm.
Optionally, the near infrared detector further comprises: an ohmic contact electrode disposed above and in direct contact with the substrate surface, the ohmic contact electrode being disposed as a positive electrode at the electrode of the doped region and as a negative electrode at the electrode of the undoped region, the material of the ohmic contact electrode comprising: ti, pt, au, cu, ni.
Optionally, the ion doping concentration of the doped region includes a heavy doping or a light doping.
Optionally, the range of the first depth includes 10nm to 100nm.
The embodiment of the invention provides a preparation method of a near infrared detector, which comprises the following steps: preparing a substrate, wherein the material of the substrate comprises gallium antimonide; and preparing a doped region, wherein the doped region is arranged on the surface of the substrate and extends downwards to a first depth from the surface of the substrate, and ions doped in the doped region comprise germanium and/or silicon ions.
Optionally, the near infrared detector manufacturing method further comprises: and preparing an ohmic contact electrode, wherein the ohmic contact electrode is arranged above the surface of the substrate and is in direct contact with the surface of the substrate, the electrode of the ohmic contact electrode in the doped region is set as a positive electrode, and the electrode of the ohmic contact electrode in the undoped region is set as a negative electrode.
Optionally, the doped region is doped with silicon and/or germanium ions by ion implantation, wherein the energy of the silicon ion implantation ranges from 30 to 200 kilo-electron volts, and the energy of the germanium ion implantation ranges from 30 to 200 kilo-electron volts.
Optionally, preparing the ohmic contact electrode further includes removing a passivation layer of the ohmic electrode contact electrode disposed at the substrate.
Optionally, after the doped region is subjected to ion implantation, an annealing activation is used to repair the doped region.
(II) advantageous effects
The invention designs a near infrared detector, ions are injected downwards from the surface of a substrate to form a planar detector structure, the problem of lattice mismatch caused by epitaxial material growth is solved, the influence of lateral undercutting on the uniformity of a photosensitive surface in the corrosion preparation of a mesa structure detector is effectively avoided, and the requirement of a film layer on step coverage characteristics is reduced. And the near infrared detector has simple and practical structure, can be widely applied to various actual scenes, and is suitable for photovoltaic devices such as solar cells.
Drawings
Fig. 1 schematically illustrates a schematic structure of a near infrared detector according to an embodiment of the present invention.
Fig. 2 schematically shows a flowchart of a method for manufacturing a near infrared detector according to an embodiment of the present invention.
Detailed Description
The objects, technical solutions and advantages of the present invention will become more apparent, and the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments.
Descriptions of structural embodiments and methods of the present invention are disclosed herein. It is to be understood that there is no intention to limit the invention to the particular disclosed embodiments, but that the invention may be practiced using other features, elements, methods and embodiments. Like elements in different embodiments are generally referred to by like numerals.
Fig. 1 schematically illustrates a schematic structure of a near infrared detector according to an embodiment of the present invention.
As shown in fig. 1, the near infrared detector in the present invention includes: the substrate 1, the material of which substrate 1 comprises gallium antimonide (GaSb), in an embodiment of the present invention, gaSb single crystals may be prepared by a pull-up method, a bridgman method, a vertical gradient solidification method, and a moving heater method. Compared with a mercury cadmium telluride detector and an InGaAs infrared detector, the near infrared detector using GaSb as a substrate has low cost, and the preparation process is simpler and is more suitable for industrial production.
As shown in fig. 1, the near infrared detector in the present invention includes: a doped region 2, the ions doped by the doped region 2 comprising germanium and/or silicon ions.
In the embodiment provided by the invention, the material of the substrate 1 comprises gallium antimonide, the substrate is an N-type substrate, the doped ions of the doped region 2 comprise germanium and/or silicon ions, the doped region is a P-type doped region, a space charge region formed at the interface of the doped region and the substrate is called a PN junction, and near infrared light can be effectively detected through the photoelectric effect of the PN junction.
In the embodiment provided by the present invention, the ion doping concentration of the doped region 2 includes a heavily doped junction or a lightly doped junction. The heavy-doped junction is large in doping amount of doping elements, the resistivity of the detector is low at the moment, the detector is used in the power of a near infrared detection device which needs to be improved in actual demands, the light-doped junction is low in doping element concentration, and the detector is used in the near infrared detection device which is higher in product quality requirements in actual demands.
In the embodiment provided by the invention, the doped region 2 is arranged on the surface of the substrate and extends downwards from the surface of the substrate to a first depth, wherein the range of the first depth comprises 10nm to 100nm.
In the embodiment provided by the invention, the depth to which the doped region 2 extends downwards determines the depth of the interface with the substrate, i.e. the depth of the PN junction. And the depth of the PN junction can affect the detector's response to near infrared light. When the depth of the PN junction is shallow, the responsivity to light is high, but the energy required for different ion implantation is also different in the ion implantation process, so the depth of the obtained PN junction after implantation is also different. If the implanted ions are too small, the contact area between the doped region and the substrate is small, and the PN junction space is insufficient, so that the response of the detector to light is too low. The area of the doped region contacted with the substrate can be effectively enlarged by injecting ions downwards on the surface of the substrate, so that the space of the PN junction is enlarged, and the light responsivity is improved by adjusting the junction depth of the PN junction under the condition that the PN junction has enough space.
As shown in fig. 1, the near infrared detector in the present invention includes: a passivation layer 3 overlies the substrate surface and grows upwardly from the substrate surface to a first height.
In the embodiment provided by the invention, the material of the passivation layer (3) comprises SiO 2 The range of the first height includes 200nm to 500nm. The contact between the surface of the substrate and the air is isolated by the passivation layer 3, and the oxidation of the doped region and the substrate is avoided, so that the dark current of the device, namely the current value output by the voltage-applied device under no illumination, can be reduced. And further the stability and sensitivity of the device can be increased.
As shown in fig. 1, the near infrared detector in the present invention includes: an ohmic contact electrode 4, wherein the ohmic contact electrode 4 is arranged above the surface of the substrate and is in direct contact with the surface of the substrate, the electrode of the ohmic contact electrode 4 in the doped region is set as a positive electrode, the electrode in the undoped region is set as a negative electrode, and the material of the ohmic contact electrode comprises: ti, pt, au, cu, ni.
In the embodiment provided by the invention, the near infrared detector forms a planar detector structure by performing ion implantation below the surface of the substrate, and the optical absorption layer of the planar detector structure is a PN junction space contacted with the doped region and the undoped region. Without the need to grow bulk material or superlattice structures as optically absorbing layers to the substrate surface. The structure of the application is simple and practical, and the lattice mismatch problem caused by growing epitaxial materials and the influence of etching on the side wall after growing the materials are avoided. And has good light responsivity, and can be widely applied to various complex environments.
Fig. 2 schematically shows a flowchart of a method for manufacturing a near infrared detector according to an embodiment of the present invention.
As shown in fig. 2, the method 200 of manufacturing a near infrared detector of this embodiment may include operations S201 to S203.
In operation S201, a substrate 1 is prepared, the material of the substrate 1 including gallium antimonide;
in operation S202, a doped region 2 is prepared, the doped region 2 being disposed on a surface of the substrate 2 and extending downward from the substrate surface to a first depth, the ions doped by the doped region 2 including germanium and/or silicon ions.
In operation S203, a passivation layer 3 and an ohmic contact electrode 4 are prepared, the passivation layer 3 being covered over the substrate surface and grown upward from the substrate surface to a first height, the material of the passivation layer 3 including SiO 2 The range of the first height includes 200nm to 500nm; the ohmic contact electrode 4 is disposed above the substrate surface and is in direct contact with the substrate surface, the ohmic contact electrode 4 is disposed as a positive electrode in the doped region and as a negative electrode in the undoped region.
In an embodiment of the present invention, a method for manufacturing a near infrared detector is provided, including:
s1, preparing and cleaning a GaSb substrate;
s2, growing a layer of Si with the thickness of 20-100nm on the surface of the substrate 3 N 4 Or SiO 2 A protective layer is made;
s3, baking the GaSb substrate plated with the protective layer, spin-coating photoresist on the GaSb substrate, then pre-baking, and curing the spin-coated photoresist to prepare a register mark;
s4, developing the substrate to expose a region needing doping;
s5, under a certain condition, performing ion implantation, and then performing annealing repair on the ion implantation area, wherein the annealing condition is 600-1000 ℃, the time is 20-60S, and removing the protective layer and the photoresist after annealing;
s6, plating SiO 2 And (3) as a passivation layer, transferring the pattern of the prepared electrode to a substrate material after alignment, exposure and development, and respectively preparing ohmic contact electrodes on the GaSb substrate of the doped region and the undoped region.
In the embodiment provided by the present invention, the protection layer in the step S2 can protect the substrate surface of the detector, and the ion implantation needs to penetrate the protection layer during the preparation of the doped region, so that the ion implantation can be changed correspondingly when the height of the protection layer is adjustedDepth at sub-implantation. The depth of the PN junction is determined by the depth of ion implantation, so that the depth of the PN junction can be controlled by the height of the protective layer, and the shallow depth of the PN junction can be ensured when different concentrations of ions are selected in practical situations, thereby ensuring that the detector has good light responsivity under various application conditions. The material of the protective layer comprises Si 3 N 4 Or SiO 2 The displacement energy (22.4 eV and 23.7 eV) of the two materials is similar to that of the GaSb (25 eV) of the substrate, and the ion blocking capability is similar, so Si is selected 3 N 4 Or SiO 2 The material used as the protective layer can better control the depth of ion implantation.
In the embodiment provided by the present invention, the doped region 2 is doped with silicon and/or germanium ions by ion implantation, where the energy of the silicon ion implantation ranges from 30 to 200 kev, and the energy of the germanium ion implantation ranges from 30 to 200 kev.
In the embodiment provided by the present invention, the preparation of the ohmic contact electrode 4 further includes: the passivation layer 3 arranged at the substrate is removed from the ohmic contact electrode 4, so that the electrode can be ensured to be in direct contact with the surface of the substrate, and current transmission can be better realized in the process of detecting light.
In the embodiment provided by the invention, after the doped region 2 is subjected to ion implantation, annealing activation is adopted to repair the doped region, and lattice damage caused by ion implantation is repaired by heating the substrate.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.
Claims (8)
1. A near infrared detector, comprising:
a substrate (1) comprising a doped region (2) and an undoped region, the material of the substrate (1) comprising gallium antimonide;
the doped region (2) is arranged on the surface of the substrate (1) and extends downwards from the surface of the substrate to a first depth, the range of the first depth comprises 10nm to 100nm, ions doped in the doped region (2) comprise germanium and/or silicon ions, and the ion doping concentration of the doped region (2) comprises heavy doping or light doping;
the undoped region is the remainder of the substrate (1) from which the doped region is removed.
2. The near infrared detector of claim 1, further comprising:
a passivation layer (3) covering the substrate surface and growing upward from the substrate surface to a first height, the material of the passivation layer (3) comprising SiO 2 The range of the first height includes 200nm to 500nm.
3. The near infrared detector of claim 1, further comprising:
an ohmic contact electrode (4), the ohmic contact electrode (4) being disposed above and in direct contact with the substrate surface, the material of the ohmic contact electrode comprising: ti, pt, au, cu, ni.
4. A method of manufacturing a near infrared detector as claimed in any one of claims 1 to 3, comprising:
preparing a substrate (1), wherein the material of the substrate (1) comprises gallium antimonide;
preparing a doped region (2), wherein the doped region (2) is arranged on the surface of the substrate (1) and extends downwards from the surface of the substrate to a first depth, the range of the first depth comprises 10nm to 100nm, ions doped in the doped region (2) comprise germanium and/or silicon ions, and the ion doping concentration of the doped region (2) comprises heavy doping or light doping.
5. The method for manufacturing a near infrared detector according to claim 4, further comprising:
preparing a passivation layer (3), wherein the passivation layer (3) is covered on the surface of the substrate and is grown upwards to a first height from the surface of the substrate, and the material of the passivation layer (3) comprises SiO 2 The range of the first height includes 200nm to 500nm;
-preparing an ohmic contact electrode (4), the ohmic contact electrode (4) being arranged above and in direct contact with the substrate surface, the material of the ohmic contact electrode comprising: ti, pt, au, cu, ni.
6. The method for manufacturing a near infrared detector according to claim 4, characterized in that the doped region (2) is doped with silicon and/or germanium ions by means of ion implantation, the energy of the silicon ion implantation being in the range of 30 to 200 kev and the energy of the germanium ion implantation being in the range of 30 to 200 kev.
7. The method of manufacturing a near infrared detector according to claim 5, wherein manufacturing an ohmic contact electrode (4) further comprises: the passivation layer (3) of the ohmic contact electrode (4) disposed at the substrate is removed.
8. The method of manufacturing a near infrared detector according to claim 6, characterized in that after ion implantation of the doped region (2), the doped region is repaired by annealing activation.
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| US5281542A (en) * | 1992-03-31 | 1994-01-25 | At&T Bell Laboratories | Planar quantum well photodetector |
| CN113013289A (en) * | 2021-02-19 | 2021-06-22 | 中国科学院半导体研究所 | Preparation method of GaSb focal plane infrared detector and GaSb focal plane infrared detector |
| CN113130676A (en) * | 2021-04-16 | 2021-07-16 | 中国科学院半导体研究所 | Focal plane infrared detector chip, detector and preparation method |
| CN114050199A (en) * | 2021-11-03 | 2022-02-15 | 昆明物理研究所 | Indium antimonide planar focal plane detector chip and preparation thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5281542A (en) * | 1992-03-31 | 1994-01-25 | At&T Bell Laboratories | Planar quantum well photodetector |
| CN113013289A (en) * | 2021-02-19 | 2021-06-22 | 中国科学院半导体研究所 | Preparation method of GaSb focal plane infrared detector and GaSb focal plane infrared detector |
| CN113130676A (en) * | 2021-04-16 | 2021-07-16 | 中国科学院半导体研究所 | Focal plane infrared detector chip, detector and preparation method |
| CN114050199A (en) * | 2021-11-03 | 2022-02-15 | 昆明物理研究所 | Indium antimonide planar focal plane detector chip and preparation thereof |
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