CN116565053A - Multi-heterojunction photoelectric detector based on polarization effect and preparation method thereof - Google Patents
Multi-heterojunction photoelectric detector based on polarization effect and preparation method thereof Download PDFInfo
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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Abstract
The invention relates to a multi-heterojunction photoelectric detector based on polarization effect, which comprises a detector and a device prepared on the detector, wherein the detector is made of III-group nitride materials, and the device comprises a substrate, a buffer layer, a lower contact layer, a lower barrier layer, an upper barrier layer and an upper contact layer which are sequentially arranged from bottom to top; the surfaces of the upper contact layer and the lower contact layer are respectively provided with an upper contact electrode and a lower contact electrode; the upper barrier layer and the lower barrier layer form a main heterojunction structure, and negative polarized charges are accumulated on the interface of the upper barrier layer and the lower barrier layer; the upper barrier layer is a single component layer, and the lower barrier layer is a multiple component layer. The invention is based on the polarization effect principle of III nitride, adopts a multi-heterojunction energy band structure to regulate and control the transportation of electrons and holes, thereby improving the transit efficiency of photo-generated electrons, the interface accumulation of photo-generated holes and improving the optical gain and response speed of the detector.
Description
Technical Field
The invention relates to the technical field of semiconductor photodetectors, in particular to a multi-heterojunction detector based on polarization effect and a preparation method thereof.
Background
With the continuous development of information technology, the status of solid semiconductor-based photoelectric detection technology in the field of optical information detection is becoming more important, and the wavelength of the solid semiconductor-based photoelectric detection technology covers infrared, terahertz, visible light, ultraviolet, and even high-energy particles in spectral regions such as x-rays. In the field of photodetection technology, an important trend is toward high sensitivity detection that can detect weak optical signals (e.g., single photon signals). In the visible light and ultraviolet band with wide application, the traditional high-sensitivity detection is mainly realized by a vacuum photoelectric detection device represented by a photo-multiplier tube (PMTs), and the internal gain can reach 106 orders of magnitude, so that the device has high detection sensitivity and can be used for weak light detection. However, PMTs also have problems such as high operating voltage (typically 1000V or more) and large volume, and in addition, in some wavelength bands, such as the uv band, long wavelength filters are required, which results in low quantum efficiency and affects the efficiency and stability of the device.
For the last twenty years, III-nitride semiconductor materials (including binary compound GaN, inN, alN, ternary compound InGaN, alGaN, alInN, and quaternary compound AlInGaN materials) have been attracting attention In the development of high-performance uv photodetectors because of their direct band gap, and their continuous change In forbidden band width from 0.69eV to 6.2eV (corresponding to a wavelength range of 1797nm to 200nm, covering the near-infrared to deep-uv UVC band), high saturated electron drift velocity, and radiation resistance, high temperature resistance, corrosion resistance, and the like, by changing the composition of In, ga, or Al. The group III nitride photodetectors used for infrared, free space visible, underwater visible, or ultraviolet detection show great application demands in detecting weak light signals, which requires the developed group III nitride photodetectors to have high internal photoelectric gain in addition to low dark current and high quantum efficiency to obtain high responsivity and high sensitivity detection.
Currently, various InGaN, gaN, alGaN visible light and ultraviolet photodetectors with high internal gain have been developed. These high-gain photodetectors are dominated by avalanche photodiodes (avalanche photodiode, APD) and heterojunction phototransistors (heterojunction phototransistor, HPT). However, the former is sensitive to defects in the material, the yield and stability of the device are required to be greatly improved under the defect density level of the current III-nitride material, and the difficulty of maintaining the low leakage (dark) current of the device is further increased due to the requirement of the device to work under a higher bias voltage, so that the reliability of the device is reduced. The latter is limited by the lack of a high quality p-type layer. For GaN-based wide bandgap semiconductor materials, the acceptor doping impurity atoms of the conventional p-type layer are typically Mg atoms. On the one hand, high Mg doping concentrations can lead to degradation of crystal quality, leading to derivative defects. These defects typically play a role as non-radiative recombination centers and traps in the device, resulting in reduced quantum efficiency and reliability. The inefficient p-type doping is not only a group III nitride but also a common problem faced by all wide bandgap semiconductors. On the other hand, during epitaxy, the presence of severe thermal diffusion and Mg memory effect effects, especially for epitaxial layers grown after the p-type layer, can be doubly affected by the forward diffusion and Mg memory effect, resulting in Mg redistribution. Meanwhile, for a group III nitride material, since the binary compound (GaN, alN, inN) or the ternary (AlGaN, inGaN, alInN) and quaternary compound (AlInGaN) of different compositions have different in-plane lattice constants a, for the structure of the heterojunction thereof, in general, the larger the difference in the material forbidden bandwidths on both sides of the heterojunction, the more serious the lattice and thermal mismatch therebetween. When the lattice and the thermal mismatch are too large, the stress of the heterojunction interface cannot be released, so that cracks appear on the surface of the epitaxial layer. This series of problems limits the performance of infrared, visible, ultraviolet photodetectors based on GaN-based and its heterojunction.
In a wurtzite structure GaN-based material, a strong spontaneous polarization field with the MV/cm magnitude exists in the material structure due to the large electronegativity difference between Ga atoms and N atoms and the non-centrosymmetric structure. In addition, in GaN-based heterojunctions, extremely strong piezoelectric polarization effects are generated due to lattice mismatch, resulting in a high density of net bound charges at the interface due to discontinuity of the polarized electric field at the heterointerface. When the interface net bound charge is negative, the interface potential rises, constituting a low-high-low structure of potential, thereby forming a barrier to transport of carriers. In the absence of illumination, such a bi-directional barrier would produce low drain (dark) currents by blocking carrier transport; under the irradiation of incident light with photon energy higher than the forbidden band width of epitaxial layers at two sides of the heterojunction barrier, the photo-generated holes are localized at the heterojunction interface, so that the heterojunction barrier is reduced, electrons are promoted to be injected from the electrode at one side of the negatively charged heterojunction, the electrode at one side of the positively charged heterojunction is collected through drifting and diffusion to transition the heterojunction interface, and accordingly high-gain photocurrent far higher than dark current is obtained. The heterojunction barrier photoelectric detector based on the polarization effect of the III nitride and without a p-type layer can avoid the problem that the performance of the photoelectric detector is low due to low Mg doping efficiency, and meanwhile, low dark current and high gain are realized, but the heterojunction barrier photoelectric detector is limited by the problems of low transition efficiency of photo-generated electrons and insufficient accumulated photo-generated holes near a heterogeneous interface, and the optical gain and response speed of the heterojunction barrier photoelectric detector are required to be further improved.
Disclosure of Invention
The invention aims to overcome at least one defect of the prior art, and provides a III-nitride multi-heterojunction photoelectric detector based on polarization effect, which adopts a multi-heterojunction energy band structure to regulate and control the transportation of electrons and holes, so that the transit efficiency of photo-generated electrons is improved, the interface accumulation of photo-generated holes is improved, and the optical gain and response speed of the detector are improved.
The technical scheme adopted by the invention is to provide a multi-heterojunction photoelectric detector based on polarization effect, which comprises a device and a device, wherein the device is prepared on the detector, the material used by the detector is III-group nitride material, and the device comprises a substrate, a buffer layer, a lower contact layer, a lower barrier layer, an upper barrier layer and an upper contact layer which are sequentially arranged from bottom to top; the surfaces of the upper contact layer and the lower contact layer are respectively provided with an upper contact electrode and a lower contact electrode; the upper barrier layer and the lower barrier layer form a main heterojunction structure, and negative polarized charges are accumulated on the interface of the upper barrier layer and the lower barrier layer; the upper barrier layer is a single component layer, and the lower barrier layer is a multiple component layer.
In the technical scheme, the detector is made of III-nitride material, and high-density net bound negative charges can be generated at the interface of the main heterojunction between the upper barrier layer and the lower barrier layer by utilizing spontaneous polarization and piezoelectric polarization effects of III-nitride, so that the interface potential is increased, and potential barriers are formed to prevent carrier transportation. Therefore, a low dark current can be achieved without incidence of an optical signal. The upper barrier junction is reversely biased in a state that the upper ohmic contact electrode and the lower ohmic contact electrode are respectively connected with positive electricity and negative electricity, and is in a full or partial depletion state. When an optical signal having a photon energy higher than that of the upper barrier layer or the lower barrier layer is incident from the upper contact layer, photo-generated-electron hole pairs are generated in the depletion region of the heterojunction barrier, and photo-generated holes generated in the depletion region of the upper layer of the main heterojunction drift toward the main heterojunction interface and are blocked by the heterojunction barrier to accumulate, causing the heterojunction barrier to be lowered, so that electrons are injected from the negative electrode of the lower contact layer. As the applied bias voltage increases, the energy bands of the lower barrier layer and the lower contact layer rise, and the local effect of the main heterogeneous interface on the photo-generated holes decreases. The photo-generated holes will drift down the barrier layer across the main heterojunction interface.
Furthermore, the multi-group layered heterostructure is adopted to improve the photo-generated electron transit efficiency and promote the accumulation of photo-generated holes at the interface of the main heterojunction, so that high optical gain and high response speed are obtained. In the technical scheme, the lower barrier layer is made to be a group III nitride multi-component layer, and discontinuity of a multi-heterojunction energy band structure can be utilized, so that electron transport is promoted, hole transport is weakened, and optical gain is improved; and the device uses electrons as a main carrier device, so that a high response speed can be obtained. In the hole transportation process, holes need to overcome valence band steps of a multilayer heterojunction raised layer by layer in a lower barrier layer, so that the transportation of photo-generated holes to a negative electrode of a lower contact layer is blocked, the accumulation of the photo-generated holes is enhanced, the effect of promoting the reduction of a heterojunction barrier is achieved, and more electrons are injected; on the other hand, electrons injected from the negative electrode of the lower contact layer drift toward the main heterojunction interface under the action of an externally applied electric field. When passing through the multi-group layered heterojunction of the lower barrier layer, the energy is increased every time the band step of one heterojunction passes through (the band of the wider band-stop layer falls down to the band of the narrower band-stop layer), so that the energy of electrons is further improved, the transportation of electrons is promoted, and the efficiency of the electrons crossing the main heterojunction barrier and the efficiency of the electrons collected by the upper contact layer are improved. Thus, the photo-induced gain of the photodetector is improved, and the response speed is improved.
Preferably, the devices are fabricated by methods including, but not limited to, metal organic chemical vapor deposition, molecular beam epitaxy, hydride vapor phase epitaxy, atomic layer deposition, or sputtering.
Preferably, the lattice structure of the group iii nitride material is wurtzite structure, having spontaneous and piezoelectric polarization effects. The preparation of the photoelectric detector in the scheme is more consistent.
Preferably, the substrate is a substrate material required for epitaxial structure preparation or support; the buffer layer is a III-nitride material arranged between the substrate and the active layer of the detector; the buffer layer includes a nucleation layer grown on the substrate for nucleation, and/or an insertion layer, among other transition layers, as required to achieve the structure.
Preferably, the lower contact layer and the upper contact layer are ohmic contact layers, the conductivity type is n-type conductivity, and the electron concentration is greater than 2×10 17 cm -3 . In the technical scheme, if the electron concentration of the lower contact layer and the upper contact layer is lower, electron diffusion current density is causedLimited degree, reduced photocurrent gain, and therefore, electron concentration of the lower contact layer and the upper contact layer is preferably greater than 2×10 17 cm -3 。
Preferably, the lower barrier layer and the upper barrier layer are unintentionally doped with group III nitride to form a main heterojunction with electron concentration lower than 2×10 17 cm -3 . In the technical scheme, the electron concentration of the upper barrier layer and the lower barrier layer is higher than 2×10, which can lead to the reduction of interface barrier and the increase of dark current of the detector 17 cm -3 。
Preferably, the upper barrier layer is the same as the upper contact layer and is binary, ternary or quaternary III-nitride with single component, and the forbidden band width of the upper contact layer and the upper barrier layer is smaller than that of the lower barrier layer and the lower contact layer; the lower barrier layer comprises 2-4 layer group layers, the layer groups are ternary or quaternary III-nitride layers with different components, and the components in the lower barrier layer change monotonically so that the forbidden bandwidth of each layer is reduced layer by layer from bottom to top; the conduction band order energy of the adjacent layer in the component layers is larger than 60meV; the lower barrier layer immediately adjacent to the lower contact layer is the same composition as the lower contact layer. In the technical scheme, the lower barrier layer is made to be a multi-component layer with monotonically changing components and gradually reduced forbidden bandwidth from bottom to top, and the forbidden bandwidth of the upper barrier layer is smaller than that of the lower barrier layer, so that a multi-heterojunction device is constructed, and the discontinuity of a multi-heterojunction energy band structure is utilized to inhibit the transportation of holes while promoting the transportation of electrons; meanwhile, the components of the upper contact layer and the upper barrier layer are kept the same, and the components of the lower contact layer and the lower barrier layer adjacent to the lower contact layer are kept the same, so that the phenomenon that heterojunction band steps are formed between the upper contact layer and the upper barrier layer and between the lower contact layer and the lower barrier layer to prevent electron transportation and reduce photocurrent gain is avoided.
Preferably, the upper contact electrode and the lower contact electrode are ohmic contact electrodes.
Further, the technical scheme also provides a preparation method of the multi-heterojunction photoelectric detector based on polarization effect, which comprises the following steps:
s1, surface cleaning: organic and inorganic cleaning is adopted to remove impurities and oxide layers on the surface of the wafer; specifically, the growing wafer is sequentially placed in acetone and isopropanol, and organic cleaning is carried out through ultrasonic oscillation; then, deionized water is used for cleaning, impurities and oxide layers on the surface of the wafer are removed, and a pure nitrogen gun is used for blow-drying;
s2, manufacturing steps: manufacturing a mask layer by adopting a standard photoetching technology, and etching the mask layer to the lower contact layer by adopting a dry etching process to form a step;
specifically, spin coating a photoresist layer on the upper contact layer, and photoetching and developing a photoetching plate with a device pattern to expose a part of the lower contact layer to be etched, wherein the rest undeveloped photoresist is used as a primary mask;
then adopting dry etching process technologies such as inductively coupled plasma etching and the like to etch the lower contact layer to form a step structure;
s3, repairing etching damage: repairing damage to the surface of the wafer caused by dry etching by adopting rapid thermal annealing and wet surface treatment;
specifically, aqua regia, KOH solution or HCl solution in boiling state is used for processing the wafer; then at N 2 Under the atmosphere, carrying out high-temperature treatment on the wafer subjected to dry etching by adopting a rapid thermal annealing process for 1min;
s4, electrode manufacturing: manufacturing a mask layer by adopting a photoetching technology to form an ohmic contact electrode pattern, adopting a vacuum evaporation technology to deposit a metal layer combination on the surfaces of the upper contact layer and the lower contact layer, and stripping to obtain an upper surface metal electrode and a lower surface metal electrode; carrying out alloy annealing treatment on the metal electrode to form an ohmic contact electrode;
specifically, a mask layer is manufactured by adopting a photoetching technology, metal lamination ohmic contact is respectively evaporated at the near edges of the table tops of the upper contact layer and the lower contact layer by utilizing a vacuum evaporation technology to form an annular electrode, and then the annular electrode is stripped by using a photoresist remover to obtain two metal annular electrodes on the upper surface and the lower surface of the step; using a rapid thermal annealing process at N 2 And (3) performing high-temperature alloy treatment for 30 s-1 min in the atmosphere to form ohmic contact.
Compared with the prior art, the invention has the beneficial effects that:
(1) According to the technical scheme, the detector is made of III-nitride materials, and utilizes spontaneous polarization and piezoelectric polarization effects of III-nitride to enable high-density net bound negative charges to be generated at a main heterojunction interface between an upper barrier layer and a lower barrier layer, so that the interface potential is increased, potential barriers are formed to prevent carrier transportation under no illumination or non-response wave band illumination, low dark current is obtained, and the detector has the advantage of weak signal detection capability.
(2) The detector of the technical scheme adopts the multi-heterojunction energy band structure to regulate and control the transportation of electrons and holes, wherein the lower barrier layer is a multi-component layer which is monotonously changed, and compared with the lower barrier layer with a single component, the multi-heterojunction energy band structure has the advantages that the discontinuity of the energy band structure is utilized by the multi-heterojunction, the regulation and control of the transportation of the electrons and the holes are realized, the transportation of the holes is weakened while the transportation of the electrons is enhanced, the electron transit efficiency is improved, and the higher response speed and the higher optical gain are obtained.
Drawings
Fig. 1 is a schematic diagram of the overall structure of a multi-heterojunction detector based on polarization effect according to the present invention.
Fig. 2 is a schematic structural diagram of a multi-heterojunction detector based on polarization effect according to the present invention.
FIG. 3 is a diagram illustrating a band simulation of a multi-heterojunction detector based on polarization effect according to the present invention.
FIG. 4 is a schematic diagram of a multi-heterojunction detector based on polarization effect according to the second embodiment of the present invention.
FIG. 5 is a second energy band simulation diagram of a multi-heterojunction detector based on polarization effect according to the present invention.
FIG. 6 is a third schematic diagram of a multi-heterojunction detector based on polarization effect according to the present invention.
FIG. 7 is a third energy band simulation of a multi-heterojunction detector based on polarization effect according to the present invention.
Fig. 8 is a schematic flow chart of a method for manufacturing a multi-heterojunction detector based on polarization effect according to the present invention.
Reference numerals illustrate: a 101 substrate; 102 a buffer layer; a 103 n-type lower contact layer; 104 unintentionally doping the plurality of sub-barrier layers; 105 unintentionally doping the upper barrier layer; a 106 n-type upper contact layer; 107 lower contact electrode; 108 on the contact electrode.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the invention. For better illustration of the following embodiments, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the actual product dimensions; it will be appreciated by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
Example 1
As shown in fig. 2, 3 and 8, the multi-heterojunction ultraviolet photoelectric detector based on polarization effect adopts metal organic chemical vapor deposition or molecular beam epitaxy for the device structure, and comprises a substrate 201, a buffer layer 202, a transition layer 203, a lower contact layer 204, a lower barrier layer 205, an upper barrier layer 206 and an upper contact layer 207, wherein the lower contact layer 204 and the upper contact layer 207 are respectively provided with a lower contact electrode 208 and an upper contact electrode 209.
Specifically, the substrate 201 is a double-sided polished sapphire substrate; the buffer layer 202 is an unintentionally doped 25nm thick low temperature GaN nucleation layer and a 3 μm thick unintentionally doped high temperature GaN layer.
Specifically, the AlN insert layer 203-1 grown at high temperature has a thickness of 10nm; the AlN insertion layer is used for relieving mismatch of lattice and thermal expansion coefficient and reducing defect, stress and dislocation density of material growth, so that an AlGaN epitaxial layer on the AlN insertion layer has good crystal quality;
specifically, the transition layer 203-2 is an unintentionally doped AlGaN layer, the thickness is 50nm, and the al composition is 0.15; for releasing lattice mismatch between AlN and AlGaN of the upper layer.
Specifically, the n-type AlGaN lower contact layer 204 has an electron concentration of 2×10 18 cm -3 The thickness is 100nm, and the Al component is 0.35; for the electron injection layer and the ohmic contact layer.
Specifically, the lower barrier layer 205 includes, from bottom to top:
an unintentional doping AlGaN layer at 30nm, al component being 0.35;
an unintentional doping AlGaN layer at 30nm, the Al component is 0.3;
an unintentional doping AlGaN layer at 30nm, al component 0.25;
the 30nm unintentionally doped AlGaN layer has an Al composition of 0.2.
The 3-step energy band structure is formed by the AlGaN lower barrier layers with 4 different Al components, and the transportation of electrons and holes is regulated and controlled.
Specifically, the upper barrier layer is an unintentionally doped GaN layer 206 with a layer thickness of 30nm.
Specifically, the upper contact layer is an n-type GaN layer 207 having a layer thickness of 20nm and an electron concentration of 2×10 18 cm -3 。
Specifically, the lower contact electrode 208 and the upper contact electrode 209 are each a metal stack of Ti (20 nm)/Al (120 nm)/Ni (30 nm)/Au (60 nm).
A preparation method of a multi-heterojunction ultraviolet photoelectric detector based on polarization effect comprises the following steps:
s1, surface cleaning: placing the grown wafer in acetone and isopropanol in sequence, and carrying out organic cleaning through ultrasonic oscillation; then, deionized water is used for cleaning, impurities and oxide layers on the surface of the wafer are removed, and a pure nitrogen gun is used for blow-drying;
s2, manufacturing steps: spin-coating a photoresist on the n-type GaN upper contact layer, and exposing a part of n-type Al to be etched by photoetching and developing a photoetching plate with a device pattern 0.35 A GaN lower contact layer with the remaining undeveloped photoresist as a primary mask;
then adopting dry etching process technologies such as inductively coupled plasma etching and the like to etch to n-type Al 0.35 A GaN lower ohmic contact layer forming a step structure;
s3, repairing etching damage: the wafer is processed by KOH solution in boiling state, and then N is added at 830 DEG C 2 Adopting a rapid thermal annealing process to treat the wafer subjected to dry etching for 60s in atmosphere;
s4, electrode manufacturing: manufacturing a mask layer by adopting a photoetching technology, and respectively contacting the layer and the n-type Al on the n-type GaN by utilizing a vacuum evaporation technology 0.35 And evaporating a Ti/Al/Ni/Au combined metal layer at the edge of the mesa of the GaN lower contact layer to form an annular electrode.
Stripping with photoresist remover to obtain two metal ring electrodes on the upper and lower surfaces of the step; n at 830℃using a rapid thermal annealing process 2 And (5) carrying out alloy treatment for 60s in the atmosphere to form ohmic contact.
Example 2
As shown in fig. 4, 5 and 8, the present embodiment is different from embodiment 1 in that: the epitaxial layers are all high Al component Al x GaN (x is more than or equal to 0.4), the transition layer is a single-layer AlGaN layer, the step number formed by the lower barrier layer is 3, and the formed detector is used for deep ultraviolet (UVC wave band) photoelectric detection and specifically comprises the following characteristics:
specifically, the substrate 301 is a double-sided polished sapphire substrate; the buffer layer 302 is an unintentionally doped AlN layer deposited at a high temperature, with a thickness of about 1 μm.
Specifically, the transition layer 303 is an unintentionally doped AlGaN layer, the thickness is 50nm, and the al composition is 0.7; for releasing lattice mismatch between AlN and AlGaN of the upper layer.
Specifically, the n-type AlGaN lower contact layer 304 has an electron concentration of 2×10 18 cm -3 The thickness is 100nm, and the Al component is 0.7; for the electron injection layer and the ohmic contact layer.
Specifically, the lower barrier layer 305 includes, from bottom to top:
an unintentional doping AlGaN layer at 20nm, al component being 0.7;
an unintentionally doped AlGaN layer at 40nm, and the Al component is 0.65;
the 60nm unintentionally doped AlGaN layer has an Al composition of 0.6.
3 different Al components AlGaN lower barrier layers form a 2-step energy band structure, and the transportation of electrons and holes is regulated and controlled.
Specifically, the upper barrier layer 306 is an unintentionally doped AlGaN layer, the Al composition is 0.4, and the layer thickness is 30nm.
Specifically, the upper contact layer 307 is an n-type AlGaN layer, the Al composition is 0.4, and the layer thickness is 20nm.
Specifically, the lower contact electrode 308 and the upper contact electrode 309 are each a metal stack V (15 nm)/Al (100 nm)/V (20 nm)/Au (80 nm).
Specifically, the preparation method of the multi-heterojunction deep Ultraviolet (UVC) photoelectric detector comprises the following steps:
s1, surface cleaning: placing the grown wafer in acetone and isopropanol in sequence, and carrying out organic cleaning through ultrasonic oscillation; then, deionized water is used for cleaning, impurities and oxide layers on the surface of the wafer are removed, and a pure nitrogen gun is used for blow-drying;
s2, manufacturing steps: at n-type Al 0.4 Spin-coating a photoresist layer on the GaN upper contact layer, and exposing a part of n-type Al to be etched by photoetching and developing a photoetching plate provided with a device pattern 0.7 A GaN lower contact layer with the remaining undeveloped photoresist as a primary mask;
then adopting dry etching process technologies such as inductively coupled plasma etching and the like to etch to n-type Al 0.7 A GaN lower ohmic contact layer forming a step structure;
s3, repairing etching damage: the wafer is processed by KOH solution in boiling state, and then N is added at 850 DEG C 2 Adopting a rapid thermal annealing process to treat the wafer subjected to dry etching for 60s in atmosphere;
s4, electrode manufacturing: manufacturing mask layers by adopting a photoetching technology, and respectively forming n-type Al layers by utilizing a vacuum evaporation technology 0.4 GaN upper contact layer and n-type Al 0.7 Evaporating a V/Al/V/Au combined metal layer at the edge of the mesa of the GaN lower contact layer to form an annular electrode; the method comprises the steps of carrying out a first treatment on the surface of the
Stripping with photoresist remover to obtain two metal ring electrodes on the upper and lower surfaces of the step; using a rapid thermal annealing process at 870 ℃ N 2 And (5) carrying out alloy treatment for 60s in the atmosphere to form ohmic contact.
Example 3
As shown in fig. 6, 7 and 8, the present embodiment is different from embodiment 2 in that: the embodiment is used for visible light detection, and specifically comprises the following characteristics:
specifically, the substrate 401 is a double-sided polished sapphire substrate; the buffer layer 402 is an unintentionally doped AlN layer deposited at a high temperature, with a thickness of about 1 μm.
Specifically, the transition layer 403 is an unintentionally doped AlGaN layer, the thickness is 50nm, and the al composition is 0.2; for releasing lattice mismatch between AlN and AlGaN of the upper layer.
Specifically, the n-type AlGaN lower contact layer 404 has an electron concentration of 2×10 18 cm -3 The thickness is 100nm, and the Al component is 0.2; for the electron injection layer and the ohmic contact layer.
Specifically, the lower barrier layer 405 includes, from bottom to top:
an unintentional doping AlGaN layer at 30nm, al component being 0.2;
an unintentional doping AlGaN layer at 30nm, al component being 0.15;
the 30nm unintentionally doped GaN layer.
3 different Al components AlGaN lower barrier layers (wherein the Al component of the GaN layer is 0) form a 2-step energy band structure, and the transportation of electrons and holes is regulated and controlled.
Specifically, the upper barrier layer 406 is an unintentionally doped InGaN layer with a layer thickness of 30nm.
Specifically, the upper contact layer 407 is an n-type InGaN layer, the In composition is 0.2, and the layer thickness is 20nm.
Specifically, the lower contact electrode 408 and the upper contact electrode 409 are each a metal stack of Ti (20 nm)/Al (100 nm)/Ni (30 nm)/Au (60 nm).
Specifically, the preparation method of the multi-heterojunction visible light photoelectric detector comprises the following steps:
s1, surface cleaning: placing the grown wafer in acetone and isopropanol in sequence, and carrying out organic cleaning through ultrasonic oscillation; then, deionized water is used for cleaning, impurities and oxide layers on the surface of the wafer are removed, and a pure nitrogen gun is used for blow-drying;
s2, manufacturing steps: in n type 0.2 Spin-coating a photoresist layer on the GaN upper contact layer, and exposing a part of n-type Al to be etched by photoetching and developing a photoetching plate provided with a device pattern 0.2 A GaN lower contact layer with the remaining undeveloped photoresist as a primary mask;
then adopting dry etching process technologies such as inductively coupled plasma etching and the like to etch to n-type Al 0.2 A GaN lower ohmic contact layer forming a step structure;
s3, repairing etching damage: HCl is adopted: the wafer is processed by H2O (1:1) solution, and then N is processed at 750 DEG C 2 Adopting a rapid thermal annealing process to treat the wafer subjected to dry etching for 60s in atmosphere;
s4, electrode manufacturing: manufacturing mask layers by adopting a photoetching technology, and respectively forming n-type In by utilizing a vacuum evaporation technology 0.2 GaN layer and n-type Al 0.2 Evaporating a Ti/Al/Ni/Au combined metal layer at the edge of the mesa of the GaN lower contact layer to form an annular electrode;
stripping with photoresist remover to obtain two metal ring electrodes on the upper and lower surfaces of the step; using a rapid thermal annealing process at 750 ℃, N 2 And (5) carrying out alloy treatment for 60s in the atmosphere to form ohmic contact.
It should be understood that the foregoing examples of the present invention are merely illustrative of the present invention and are not intended to limit the present invention to the specific embodiments thereof. Any modification, equivalent replacement, improvement, etc. that comes within the spirit and principle of the claims of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. The multi-heterojunction photoelectric detector based on polarization effect is characterized by comprising a detector and a device prepared on the detector, wherein the detector is made of III-group nitride materials, and the device comprises a substrate, a buffer layer, a lower contact layer, a lower barrier layer, an upper barrier layer and an upper contact layer which are sequentially arranged from bottom to top;
the surfaces of the upper contact layer and the lower contact layer are respectively provided with an upper contact electrode and a lower contact electrode;
the upper barrier layer and the lower barrier layer form a main heterojunction structure, and negative polarized charges are accumulated on the interface of the upper barrier layer and the lower barrier layer;
the upper barrier layer is a single component layer, and the lower barrier layer is a multiple component layer.
2. The polarization-effect-based multi-heterojunction photodetector of claim 1, wherein the lattice structure of the group iii nitride material is a wurtzite structure.
3. The multi-heterojunction photoelectric detector based on polarization effect according to claim 1, wherein the substrate is a substrate material required for epitaxial structure preparation or support; the buffer layer is a III-nitride material arranged between the substrate and the active layer of the detector; the buffer layer includes a nucleation layer and/or a transition layer.
4. The multi-heterojunction photodetector based on polarization effect of claim 1, wherein the conductivity type of the lower contact layer and the upper contact layer is n-type conductivity.
5. The polarization-effect-based multi-heterojunction photodetector of claim 1, wherein the electron concentration of said lower contact layer and upper contact layer is greater than 2 x 10 17 cm -3 。
6. The polarization-based multi-heterojunction photodetector of claim 1, wherein said lower and upper barrier layers are unintentionally doped group III nitrides having electron concentrations below 2 x 10 17 cm -3 。
7. The polarization-based multi-heterojunction photodetector of claim 1, wherein the upper barrier layer is the same as the lower barrier layer and is comprised of a single component binary, ternary or quaternary group III nitride layer;
and the forbidden band widths of the upper contact layer and the upper barrier layer are smaller than those of the lower barrier layer and the lower contact layer.
8. The polarization-effect-based multi-heterojunction photodetector of claim 1, wherein the lower barrier layer comprises 2-4 layer-by-layer layers, the component layers being ternary or quaternary group III nitride layers of different compositions, the composition in the lower barrier layer being monotonically varied such that the forbidden bandwidth of each layer decreases from bottom to top;
the conduction band order energy of the adjacent layer in the component layers is larger than 60meV;
the lower barrier layer immediately adjacent to the lower contact layer is the same composition as the lower contact layer.
9. The multi-heterojunction photodetector based on polarization effect of claim 1, wherein said upper contact electrode and lower contact electrode are ohmic contact electrodes.
10. A method of manufacturing a photodetector according to any one of claims 1 to 9, comprising the steps of:
s1, surface cleaning: organic and inorganic cleaning is adopted to remove impurities and oxide layers on the surface of the wafer;
s2, manufacturing steps: manufacturing a mask layer by adopting a standard photoetching technology, and etching the mask layer to the lower contact layer by adopting a dry etching process to form a step;
s3, repairing etching damage: repairing damage to the surface of the wafer caused by dry etching by adopting rapid thermal annealing and wet surface treatment;
s4, electrode manufacturing: manufacturing a mask layer by adopting a photoetching technology to form an ohmic contact electrode pattern, adopting a vacuum evaporation technology to deposit a metal layer combination on the surfaces of the upper contact layer and the lower contact layer, and stripping to obtain an upper surface metal electrode and a lower surface metal electrode; and carrying out alloy annealing treatment on the metal electrode to form the ohmic contact electrode.
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