WO2019109456A1 - 柔性oled显示面板的制作方法 - Google Patents

柔性oled显示面板的制作方法 Download PDF

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Publication number
WO2019109456A1
WO2019109456A1 PCT/CN2018/071589 CN2018071589W WO2019109456A1 WO 2019109456 A1 WO2019109456 A1 WO 2019109456A1 CN 2018071589 W CN2018071589 W CN 2018071589W WO 2019109456 A1 WO2019109456 A1 WO 2019109456A1
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layer
manufacturing
flat layer
flexible substrate
display panel
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French (fr)
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金祥
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US15/916,470 priority Critical patent/US11114628B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • the present invention relates to the field of OLED display technologies, and in particular, to a method for fabricating a flexible OLED display panel.
  • OLEDs Organic Light-Emitting Diodes
  • OLEDs are self-illuminating devices, which have the advantages of light weight, low power consumption, fast response, high luminous efficiency and flexible display.
  • the laser lift-off (LLO) process is particularly important.
  • the process is mainly to separate the carrier board from the flexible substrate layer in the panel with the carrier board, thereby realizing the panel from rigid to flexible.
  • the panel with the carrier board generally includes a glass carrier board and a flexible substrate layer (made with a touch line), a low temperature polysilicon layer, an OLED device layer, etc. (as shown in FIG. 1 ), and the principle of the LLO process is :
  • the laser substrate is passed through the glass carrier to denature the flexible substrate layer (such as PI) from the glass.
  • the present invention provides a method for fabricating a flexible OLED display panel, which is used to solve the problem that the laser is unevenly distributed in the flexible substrate layer due to defects such as pits on the surface of the glass carrier plate in the prior LLO process.
  • the success rate of the LLO process is used to solve the problem that the laser is unevenly distributed in the flexible substrate layer due to defects such as pits on the surface of the glass carrier plate in the prior LLO process.
  • the present invention provides a method for fabricating a flexible OLED display panel, comprising the following steps:
  • the flat layer has a light transmittance of ⁇ 90% for laser light in a wavelength range of 300-400 nm.
  • the flat layer has a roughness Ra ⁇ 0.4 ⁇ m.
  • the flat layer has a thickness of 50-120 ⁇ m.
  • the thickness of the glass carrier plate is 400-500 ⁇ m.
  • the flattening layer and the glass carrier plate have a transmittance of ⁇ 40% for laser light in a wavelength range of 300 to 400 nm.
  • the constituent material of the flat layer comprises at least one of an organic material and an inorganic material, the organic material comprising at least one of an acrylic resin, an epoxy resin and a silicone resin, the inorganic material comprising silicon dioxide At least one of magnesium fluoride, calcium fluoride and barium fluoride.
  • the flat layer is formed by mixing a constituent material of the flat layer and a solvent to obtain a mixed slurry, and coating the mixed slurry on a surface of the glass carrier plate facing away from the flexible substrate layer After curing, the flat layer is formed.
  • the wavelength of the laser used is 300-400 nm; the energy of the laser used ranges from 290-350 mJ.
  • a package protection layer and a flexible back cover are sequentially disposed on the OLED device layer.
  • a flat layer is formed on the surface of the glass carrier board facing away from the flexible substrate layer.
  • the surface of the glass carrier plate facing away from the flexible substrate layer is flattened, and when laser stripping is performed on the laser beam, the laser can be uniformly applied to the flexible substrate layer, and the separation of the peeling carrier plate and the flexible substrate layer can be easily realized. It does not cause damage to circuits and TFTs on the flexible substrate layer.
  • the manufacturing method of the flexible OLED display panel provided by the invention improves the problem that the mechanical damage of the surface of the glass carrier plate in the existing LLO process causes the laser to be unevenly distributed in the flexible substrate layer, and improves the success rate of the LLO process. Improve the yield of flexible OLED display panels.
  • FIG. 1 is a schematic structural view of an OLED panel before LLO in the prior art
  • FIG. 2 is a light path diagram of a laser in a panel in an LLO process in the prior art
  • FIG. 3 is a flow chart of a method for fabricating a flexible OLED display panel according to the present invention.
  • FIG. 4 is a schematic structural view of an OLED display panel after forming a flat layer in the present invention.
  • FIG. 5 is a schematic view showing a propagation path of an ultraviolet laser in a flat layer, a glass carrier, and a flexible substrate layer;
  • FIG. 6 is a schematic structural view of a flexible OLED display panel obtained after the LLO process.
  • Reference numerals: 10 is a glass carrier plate, 20 is a flat layer, 1 is a flexible substrate layer, 2 is a low temperature polysilicon layer, and 3 is an OLED element layer.
  • an embodiment of the present invention provides a method for fabricating a flexible OLED display panel, including the following steps:
  • a glass carrier board 10 is provided, and a flexible substrate layer 1, a low temperature polysilicon layer 2, and an OLED element layer 3 are sequentially formed on one side of the glass carrier board 10, and an OLED display panel with a glass carrier board as shown in FIG. 1 is obtained. ;
  • step S10 the surface of the glass carrier plate 10 facing away from the flexible substrate layer 1 is mechanically damaged (such as pits, scratches, etc. shown at the arrows in FIG. 1), and the mechanical damage is usually the glass.
  • the carrier board is supported, and during the process of fabricating the flexible substrate layer 1, the low temperature polysilicon layer 2, the OLED element layer 3, etc., the glass carrier board 10 contacts at least one of the thimble, the roller and the brush or these structures
  • the presence of foreign matter causes mechanical damage such as machine pits, scratches, and the like.
  • the OLED display panel with a glass carrier board is not limited to the structure shown in FIG. This part will be mentioned in the explanation of step S30 below.
  • step S20 the flat layer 20 is formed for the purpose of filling mechanical damage (such as pits, scratches, etc.) on the glass carrier 10 such that the glass carrier 10 faces away from the surface of the flexible substrate layer 1.
  • the flattening is performed so that the laser light at the time of subsequent laser peeling is uniformly distributed on the flexible substrate layer.
  • the flat layer 20 has a light transmittance of ⁇ 90% for laser light in a wavelength range of 300-400 nm.
  • the light transmittance is preferably ⁇ 95%.
  • the light transmittance of the flat layer 20 is close to the transmittance of the glass carrier plate 10, so that the transmission of the laser light by the original glass carrier plate 10 is not affected by the additional provision of the flat layer 20.
  • the material of the flat layer 20 has an absorption rate of ⁇ 6% for laser light in the wavelength range of 300-400 nm. This does not cause a large amount of attenuation of the laser energy used in laser stripping.
  • the roughness Ra (contour arithmetic mean deviation) of the flat layer 20 is ⁇ 0.4 ⁇ m. It is preferably 0.05 to 0.3 ⁇ m.
  • the flat layer 20 has a thickness of 50-120 ⁇ m. The thickness herein refers to the thickness of the flat layer 20 on the glass carrier 10 without the pits. The thickness of the flat layer 20 should not be too thick to affect the laser reaching the vicinity of the flexible substrate layer 1.
  • the glass carrier plate 10 has a thickness of 400-500 ⁇ m.
  • the thickness here refers to the thickness of the region of the glass carrier plate 10 without pits.
  • the flat layer 20 and the glass carrier plate 10 which are stacked are arranged to have a transmittance of ⁇ 40% for laser light in the wavelength range of 300 to 400 nm.
  • the constituent material of the flat layer 20 may be at least one of an organic material and an inorganic material.
  • the inorganic material include silica (SiO 2 ), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), barium fluoride (BaF 2 ), and the like.
  • the organic material examples include an acrylic resin (for example, polymethyl methacrylate (PMMA)), an epoxy resin, a silicone resin, and the like.
  • PMMA polymethyl methacrylate
  • a silicone resin formed by copolymerizing polydimethylsiloxane (PDMS) with an acrylate or a silane coupling agent (such as methylvinylsiloxane) may be used as the flat layer; bisphenol A may also be used.
  • PDMS polydimethylsiloxane
  • a silane coupling agent such as methylvinylsiloxane
  • the organic material preferably does not have an aromatic ring, a hydroxyl group, an amine group, a halogen, or a sulfur group. This avoids the higher absorption and lower transmission of ultraviolet light by these structures.
  • the optical properties of the organic substance can be changed by adjusting the molecular chain, the group, and the like of the organic substance to have a high transmittance and low absorption similar to that of the glass.
  • the material of the flat layer 20 is silicon dioxide (SiO 2 ).
  • the flat layer 20 can be realized by a coating method or a chemical vapor deposition method. It may be selected depending on its constituent materials, and is preferably prepared by a coating method, so that mechanical damage (such as pits, scratches) on the glass carrier plate 10 can be better filled.
  • the formation process of the flat layer 20 is as follows: the constituent materials of the flat layer 20 and the solvent are mixed to obtain a mixed slurry, and the mixed slurry is coated on the glass carrier plate 10 facing away from the flexibility.
  • the flat layer 20 is formed on the surface of the substrate layer after curing.
  • the solvent is one or more selected from the group consisting of common chemical solvents such as water, ethanol, isopropanol, acetone, methyl ethyl ketone, and toluene, but is not limited thereto.
  • the specific choice of the solvent may depend on the solubility of the constituent materials of the flat layer 20.
  • silica or magnesium fluoride is selected as the raw material of the flat layer 20
  • water can be used as a solvent to prepare a mixed slurry
  • PMMA is used as a raw material for the flat layer 20
  • acetone, chloroform, or the like can be used.
  • a volatile slurry such as methyl chloride is used as a mixed slurry.
  • the structure of the obtained planarized OLED display panel is as shown in FIG. 4, as is apparent from the comparison of FIG. 1 and FIG. 4, when the glass carrier board 10 faces away from the flexible substrate.
  • the surface of the layer 1 is coated to form the flat layer 20
  • mechanical damage such as pits, scratches, and the like on the back of the glass carrier sheet 10 disappears due to the filling of the flat layer material, and the surface of the flat layer 20 facing away from the glass carrier sheet 10 is flat. , the roughness is low.
  • the planarized OLED display panel is covered with a flat surface 20 having a flat surface.
  • laser stripping When laser stripping is performed, laser light can be uniformly applied to the flexible substrate layer 1 (see FIG. 5). The separation of the peeling carrier plate from the flexible substrate layer is achieved without causing damage to the circuit or TFT array layer on the flexible substrate layer.
  • the wavelength of the laser used is 300-400 nm; the energy of the laser used ranges from 290-350 mJ.
  • the laser energy generally used for the unflattened OLED display panel ranges from 260 to 290 mJ.
  • step S30 after the glass carrier board is removed, a process of module manufacturing, such as detection, repair, cleaning, and IC binding, is further included.
  • the glass carrier board 10 is formed on the surface facing away from the flexible substrate layer 1 .
  • the flat layer 20 planarizes the surface of the glass carrier plate 10 facing away from the flexible substrate layer 1, and when laser stripping is performed on the laser, the laser can be uniformly applied to the flexible substrate layer 1 to easily achieve the peeling load.
  • the separation of the board 10 from the flexible substrate layer 1 does not cause damage to the touch circuit or the like on the flexible substrate layer 1.
  • the manufacturing method of the flexible OLED display panel provided by the invention improves the problem that the mechanical damage of the surface of the glass carrier plate in the existing LLO process causes the laser to be unevenly distributed in the flexible substrate layer, and improves the success rate of the LLO process. Improve the yield of flexible OLED display panels.
  • the obtained flexible OLED display panel is a conventional structure in the prior art, and may not be limited to the flexible substrate layer 1, the low-temperature polysilicon layer 2, the OLED element layer 3, and the like shown in FIG.
  • the flexible substrate layer 1 may be directly formed with a touch line, a touch screen sensor, or the like, or a first barrier layer may be formed on the flexible substrate layer to form a touch line.
  • the low-temperature polysilicon layer 2 is formed by laser crystallization of amorphous silicon to realize manual control of super lateral growth, and may also be referred to as "low temperature polysilicon thin film transistor (LTPS-TFT) layer” and thin film transistor array (TFT Array) layer. .
  • the formed polysilicon contains fewer grain boundaries, thereby equalizing the performance of the TFT device.
  • a second barrier layer may be disposed between the touch line and the low temperature polysilicon layer 2.
  • the first barrier layer and the second barrier layer function to block water vapor and ensure flatness.
  • the manufacturing step of the OLED element layer 3 can be referred to the prior art, for example, by vapor deposition.
  • the OLED device layer 3 may include an anode, an organic light-emitting layer, and a cathode, or may be an anode, a hole transport layer, an organic light-emitting layer, an electron transport layer, and a cathode which are sequentially stacked, or may be an anode and a space which are sequentially stacked.
  • the hole injection layer, the hole transport layer, the organic light-emitting layer, the electron transport layer, the electron injection layer, the cathode, and the like are not limited thereto.
  • the encapsulating protective layer 4 and the flexible back cover 5 are further disposed on the OLED element layer 3 in sequence.
  • the flexible substrate layer 1 and the flexible back cover 5 form a closed space, and the OLED element layer 3 and the package can be packaged.
  • the protective layer 4 is housed in the enclosed space.
  • the encapsulation protective layer 4 encapsulates the OLED element layer 3 and the low temperature polysilicon layer 2 on the flexible substrate layer 1.
  • the encapsulating protective layer 4 is formed by alternating organic film and inorganic film, and both the organic film and the inorganic film have a certain water vapor barrier capability.
  • the flexible back cover 5 may be a PET (polybutylene terephthalate) material or the like.

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Abstract

提供一种柔性OLED显示面板的制作方法，包括：提供玻璃承载板（10），在玻璃承载板的一面依次形成柔性基板层（1）、低温多晶硅层（2）、OLED元件层（3）；在玻璃承载板背向柔性基板层的表面形成平坦层（20），得到平坦化的OLED显示面板；对平坦化的OLED显示面板进行激光剥离以去除玻璃承载板，得到柔性OLED显示面板。该柔性OLED显示面板的制作方法，较好地改善了现有激光剥离制程中激光在柔性基板层中分布不均匀而导致剥离成功率较低的问题。

Description

柔性OLED显示面板的制作方法
本申请要求于2017年12月05日提交中国专利局、申请号为201711269186.0、发明名称为“柔性OLED显示面板的制作方法”的中国专利申请的优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及OLED显示技术领域，尤其涉及一种柔性OLED显示面板的制作方法。
背景技术
有机电致发光器件(Organic Light-Emitting Diodes，简称OLED)是自发光器件，它具有质量轻薄、功耗低、响应速度快、发光效率高及可实现柔性显示等优点，成为近年来应用较广的显示器件之一。其中，柔性OLED显示面板成为目前显示领域的主流产品。
在柔性OLED显示面板的制作过程中，激光剥离(LLO)制程尤为重要，该过程主要是对带承载板的面板中实现承载板与柔性基板层的分离，进而实现面板由刚性转变为柔性。其中，带承载板的面板一般包括玻璃承载板以及设置在其上的柔性基板层(制作有触控线路)、低温多晶硅层、OLED器件层等(如图1所示)，LLO制程的原理是：利用激光穿过玻璃承载板，使柔性基板层(如PI)变性而与玻璃分离。但玻璃承载板上的机械损伤(划伤或破损)会影响激光在PI中的均匀分布，从而导致PI与承载板分离失败，导致OLED器件受损， 降低了良率。如图2所示，在激光分布多的地方，PI经激光灼烧产生的灰烬多，可能损伤PI基板中的线路及薄膜晶体管等，而激光分布少的地方，PI吸收的激光能量不足，不易于玻璃分离，在分离脱层时，PI易拉扯线路及薄膜晶体管等。
因此，有必要改善柔性OLED显示面板的制作方法。
发明内容
有鉴于此，本发明提供了一种柔性OLED显示面板的制作方法，用于解决现有LLO制程中玻璃承载板表面的凹坑等缺陷造成激光在柔性基板层中分布不均匀的问题，并提高LLO制程的成功率。
具体地，本发明提供了一种柔性OLED显示面板的制作方法，包括以下步骤：
提供一玻璃承载板，在所述玻璃承载板的一面依次形成柔性基板层、低温多晶硅层和OLED元件层；
在所述玻璃承载板背向所述柔性基板层的表面形成平坦层，得到平坦化的OLED显示面板；
对所述平坦化的OLED显示面板进行激光剥离以去除所述玻璃承载板，得到柔性OLED显示面板。
其中，所述平坦层对300-400nm波长范围内的激光的透光率≥90％。
其中，所述平坦层的粗糙度Ra≤0.4μm。
其中，所述平坦层的厚度为50-120μm。
其中，所述玻璃承载板的厚度为400-500μm。
其中，层叠设置的平坦层和玻璃承载板对300-400nm波长范围内的激光的透过率≥40％。
其中，所述平坦层的组成材料包括有机材料、无机材料中的至少一种，所述有机材料包括丙烯酸树脂、环氧树脂和有机硅树脂中的至少一种，所述无机材料包括二氧化硅、氟化镁、氟化钙和氟化钡中的至少一种。
其中，所述平坦层的形成过程如下：将平坦层的组成材料和溶剂相混合，得到混合浆料，将所述混合浆料涂覆在所述玻璃承载板背向所述柔性基板层的表面，固化后，形成所述平坦层。
其中，所述激光剥离过程中，所用激光的波长为300-400nm；所用激光的能量的范围为290-350mJ。
其中，在所述OLED器件层之上还依次设置有封装保护层、柔性后盖。
本发明提供的柔性OLED显示面板的制作方法中，在对带玻璃承载板的OLED显示面板进行激光剥离之前，先在所述玻璃承载板背向所述柔性基板层的表面形成平坦层，使所述玻璃承载板背向所述柔性基板层的表面平坦化，后期在对其进行激光剥离时，激光能均匀打到柔性基板层上，较容易地实现剥离承载板与柔性基板层的分离，而不会对柔性基板层上的电路、TFT造成伤害。本发明提供的柔性OLED显示面板的制作方法，较好地改善了现有LLO制程中玻璃承载板表面的机械损伤造成激光在柔性基板层中分布不均匀的问题，并提高LLO制程的成功率，提高了柔性OLED显示面板的良品率。
附图说明
图1为现有技术中LLO前的OLED面板结构示意图；
图2为现有技术中LLO制程中激光在面板中的光路图；
图3为本发明中柔性OLED显示面板的制作方法的流程图；
图4为本发明中形成平坦层后的OLED显示面板的结构示意图；
图5为紫外激光在平坦层、玻璃承载板、柔性基板层中的传播路径示意图；
图6为经LLO制程后得到的柔性OLED显示面板的结构示意图。
附图标记：10为玻璃承载板，20为平坦层，1为柔性基板层、2为低温多晶硅层，3为OLED元件层。
具体实施方式
下面结合附图及实施例，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。应当指出，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
参见图3，本发明实施例提供了一种柔性OLED显示面板的制作方法，包括以下步骤：
S10，提供一玻璃承载板10，在所述玻璃承载板10的一面依次形成柔性基板层1、低温多晶硅层2、OLED元件层3，得到如图1所示的带玻璃承载板的OLED显示面板；
S20，在所述玻璃承载板10背向所述柔性基板层1的表面形成平坦层20，得到平坦化的OLED显示面板；
S30，对所述平坦化的OLED显示面板进行激光剥离，以去除所述玻璃承载板，得到柔性OLED显示面板。
步骤S10中，所述玻璃承载板10背向所述柔性基板层1的表面带有机械损伤(如图1箭头处所示的凹坑、划痕等)，这些机械损伤通常是以所述玻璃承载板为支撑，在其上制作柔性基板层1、低温多晶硅层2、OLED元件层3等的过程中，玻璃承载板10接触到顶针、滚轮和毛刷中的至少一种机构或这些结构上存在的异物而产生了诸如机凹坑、划痕等械损伤。
此外，所述带玻璃承载板的OLED显示面板并不限于图1所示的结构。这一部分会在下面的步骤S30的解释中提到。
步骤S20中，制作平坦层20的目的是为了填充所述玻璃承载板10上的机械损伤(如凹坑、划痕等)，使所述玻璃承载板10背向所述柔性基板层1的表面平坦化，以便在后续激光剥离时的激光均匀分布在所述柔性基板层上。
其中，所述平坦层20对300-400nm波长范围内的激光的透光率≥90％。透光率优选为≥95％。所述平坦层20的透光率与所述玻璃承载板10的透过率相接近，这样不致于因额外设置平坦层20而影响原有的玻璃承载板10对激光的透过。
可选地，所述平坦层20的材料对300-400nm波长范围内的激光的吸收率≤6％。这样不会造成激光剥离时所用激光能量的大量衰减。
其中，所述平坦层20的粗糙度Ra(轮廓算术平均偏差)≤0.4μm。优选为0.05-0.3μm。其中，所述平坦层20的厚度为50-120μm。这里的厚度是指未有凹坑的玻璃承载板10上平坦层20的厚度。所述平坦层20的厚度不能太厚，以免影响激光达到柔性基板层1附近。
可选地，所述玻璃承载板10的厚度为400-500μm。这里的厚度是指不带凹坑的玻璃承载板10区域的厚度。
可选地，层叠设置的平坦层20和玻璃承载板10对300-400nm波长范围内的激光的透过率≥40％。
所述平坦层20的组成材料可为有机材料、无机材料中的至少一种。具体地，对于无机材料可列举二氧化硅(SiO 2)、氟化镁(MgF 2)、氟化钙(CaF 2)、氟化钡(BaF 2)等。
对于有机材料，可列举丙烯酸树脂(例如聚甲基丙烯酸甲酯(PMMA))、环氧树脂、有机硅树脂等。例如，可以采用由聚二甲基硅氧烷(PDMS)与丙烯酸酯、硅烷偶联剂(如甲基乙烯基硅氧烷)共聚形成的有机硅树脂作为平坦层；还可以采用由双酚A型环氧丙烯酸树脂、KH-570硅烷偶联剂(γ-甲基丙烯酰氧丙基三甲氧基硅烷)、BPO(过氧化二苯甲酰)引发剂交联固化而成的有机硅树脂作为平坦层。
可选地，所述有机材料中最好不要带有芳香环、羟基、胺基、卤素、硫基。这样可避免这些结构对紫外光的较高吸收、较低透过。可以通过调整有机物的分子链、基团等，改变其光学性能，使其具有与玻璃相近的高透过率和低吸收。
优选地，所述平坦层20的材料为二氧化硅(SiO 2)。
所述平坦层20可采用涂覆法、化学气相沉积法来实现。可视其构成材料来选择，优选采用涂覆法来制备，这样可以更好地填平玻璃承载板10上的机械损伤(如凹坑、刮伤)。
具体地，所述平坦层20的形成过程如下：将平坦层20的组成材料和溶剂相混合，得到混合浆料，将所述混合浆料涂覆在所述玻璃承载板10背向所述柔性基板层的表面，固化后，形成所述平坦层20。
其中，所述溶剂选自水、乙醇、异丙醇、丙酮、丁酮、甲苯等常见化学溶 剂中的一种或多种，但不限于此。溶剂的具体选择可根据平坦层20的构成原料的溶解性而定。举例来说，当选用二氧化硅或氟化镁作为平坦层20的原料时，可采用水作溶剂制成混合浆料；当选用PMMA作为平坦层20的原料时，可采用丙酮、氯仿、二氯甲烷等挥发性溶剂制成混合浆料。
经过步骤S20的处理，得到的平坦化的OLED显示面板的结构如图4所示，从图1和图4的对比可以明显地看出，当在所述玻璃承载板10背向所述柔性基板层1的表面涂覆形成平坦层20后，玻璃承载板10背部的凹坑、划痕等机械损伤因被平坦层材料的填充而消失，而平坦层20背向玻璃承载板10的表面均平坦，粗糙度较低。
所述平坦化的OLED显示面板，玻璃承载板10的背面覆盖有表面平坦的平坦层20，在对其进行激光剥离时，激光能均匀打到柔性基板层1上(参阅图5)，较容易地实现剥离承载板与柔性基板层的分离，而不会对柔性基板层上的电路、TFT阵列层造成伤害。
可选地，所述激光剥离过程中，所用激光的波长为300-400nm；所用激光的能量的范围为290-350mJ。现有技术中，对未平坦化的OLED显示面板一般采用的激光能量的范围为260-290mJ。
可选地，步骤S30中，在去除玻璃承载板之后，还包括模组制作的工序，如检测、修复、清洗、IC绑定等工序。
综上，本发明提供的柔性OLED显示面板的制作方法中，在对带玻璃承载板的OLED显示面板进行激光剥离之前，先在所述玻璃承载板10背向所述柔性基板层1的表面形成平坦层20，使所述玻璃承载板10背向所述柔性基板层1的表面平坦化，后期在对其进行激光剥离时，激光能均匀打到柔性基板层 1上，较容易地实现剥离承载板10与柔性基板层1的分离，而不会对柔性基板层1上的触控电路等造成伤害。本发明提供的柔性OLED显示面板的制作方法，较好地改善了现有LLO制程中玻璃承载板表面的机械损伤造成激光在柔性基板层中分布不均匀的问题，并提高LLO制程的成功率，提高了柔性OLED显示面板的良品率。
激光剥离后，所得的柔性OLED显示面板为现有技术中的常规结构，可以不限于图6所示出的柔性基板层1、低温多晶硅层2、OLED元件层3等。
其中，所述柔性基板层1上可以直接制作有触控线路、触摸屏传感器等，也可在柔性基板层上先制作第一阻隔层，再制作触控线路。
所述低温多晶硅层2是对非晶硅采用激光晶化方式，实现人工控制超级横向成长形成，也可称为“低温多晶硅薄膜晶体管(LTPS-TFT)层”、薄膜晶体管阵列(TFT Array)层。形成的多晶硅中含有较少的晶界，从而使TFT器件性能均衡。
可选地，在所述触控线路与所述低温多晶硅层2之间，还可设置第二阻隔层。第一阻隔层和第二阻隔层起到阻挡水汽、保证平整的作用。
OLED元件层3的制作步骤可以参照现有技术，例如采用蒸镀法。所述OLED元件层3可以包括阳极、有机发光层、阴极，也可以是依次层叠设置的阳极、空穴传输层、有机发光层、电子传输层、阴极，还可以是依次层叠设置的阳极、空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层和阴极等，但不限于此。
其中，在所述OLED元件层3之上还依次设置有封装保护层4、柔性后盖5，所述柔性基板层1和柔性后盖5形成封闭空间，可以将所述OLED元件层 3、封装保护层4容置在该封闭空间内。
进一步地，所述封装保护层4将所述OLED元件层3与柔性基板层1上的低温多晶硅层2包覆起来。
进一步地，所述封装保护层4由有机物膜与无机物膜交替而成，采用的有机物膜与无机物膜均具有一定的水气阻隔能力。柔性后盖5可采用PET(聚对苯二甲酸类树脂)材料等。
需要说明的是，根据上述说明书的揭示和和阐述，本发明所属领域的技术人员还可以对上述实施方式进行变更和修改。因此，本发明并不局限于上面揭示和描述的具体实施方式，对本发明的一些等同修改和变更也应当在本发明的权利要求的保护范围之内。此外，尽管本说明书中使用了一些特定的术语，但这些术语只是为了方便说明，并不对本发明构成任何限制。

Claims (20)

  1. 一种柔性OLED显示面板的制作方法，其中，包括以下步骤：
    提供一玻璃承载板，在所述玻璃承载板的一面依次形成柔性基板层、低温多晶硅层和OLED元件层；
    在所述玻璃承载板背向所述柔性基板层的表面形成平坦层，得到平坦化的OLED显示面板；
    对所述平坦化的OLED显示面板进行激光剥离以去除所述玻璃承载板，得到柔性OLED显示面板。
  2. 如权利要求1所述的制作方法，其中，所述平坦层对300-400nm波长范围内的激光的透光率≥90％。
  3. 如权利要求2所述的制作方法，其中，所述平坦层的材料对300-400nm波长范围内的激光的吸收率≤6％。
  4. 如权利要求1所述的制作方法，其中，所述平坦层的粗糙度Ra≤0.4μm。
  5. 如权利要求3所述的制作方法，其中，所述平坦层的粗糙度为0.05-0.3μm。
  6. 如权利要求1所述的制作方法，其中，所述平坦层的厚度为50-120μm。
  7. 如权利要求6所述的制作方法，其中，所述玻璃承载板的厚度为400-500μm。
  8. 如权利要求7所述的制作方法，其中，层叠设置的平坦层和玻璃承载板对300-400nm波长范围内的激光的透过率≥40％。
  9. 如权利要求1所述的制作方法，其中，所述平坦层的组成材料包括有机材料、无机材料中的至少一种，所述有机材料包括丙烯酸树脂、环氧树脂和有机硅树脂中的至少一种，所述无机材料包括二氧化硅、氟化镁、氟化钙和氟化钡中的至少一种。
  10. 如权利要求3所述的制作方法，其中，所述平坦层的组成材料包括有机材料、无机材料中的至少一种，所述有机材料包括丙烯酸树脂、环氧树脂和有机硅树脂中的至少一种，所述无机材料包括二氧化硅、氟化镁、氟化钙和氟化钡中的至少一种。
  11. 如权利要求5所述的制作方法，其中，所述平坦层的组成材料包括有机材料、无机材料中的至少一种，所述有机材料包括丙烯酸树脂、环氧树脂和有机硅树脂中的至少一种，所述无机材料包括二氧化硅、氟化镁、氟化钙和氟化钡中的至少一种。
  12. 如权利要求8所述的制作方法，其中，所述平坦层的组成材料包括有机材料、无机材料中的至少一种，所述有机材料包括丙烯酸树脂、环氧树脂和有机硅树脂中的至少一种，所述无机材料包括二氧化硅、氟化镁、氟化钙和氟化钡中的至少一种。
  13. 如权利要求12所述的制作方法，其中，所述平坦层的组成材料为二氧化硅。
  14. 如权利要求9所述的制作方法，其中，所述平坦层的形成过程如下：将平坦层的组成材料和溶剂相混合，得到混合浆料，将所述混合浆料涂覆在所述玻璃承载板背向所述柔性基板层的表面，固化后，形成所述平坦层。
  15. 如权利要求12所述的制作方法，其中，所述平坦层的形成过程如下： 将平坦层的组成材料和溶剂相混合，得到混合浆料，将所述混合浆料涂覆在所述玻璃承载板背向所述柔性基板层的表面，固化后，形成所述平坦层。
  16. 如权利要求1所述的制作方法，其中，所述激光剥离过程中，所用激光的波长为300-400nm；所用激光的能量的范围为290-350mJ。
  17. 如权利要求1所述的制作方法，其中，在所述OLED器件层之上还依次设置有封装保护层、柔性后盖，所述柔性基板层和所述柔性后盖形成封闭空间，以将所述OLED元件层、封装保护层容置在所述封闭空间内。
  18. 如权利要求17所述的制作方法，其中，所述封装保护层将所述OLED元件层与柔性基板层上的低温多晶硅层包覆起来；所述封装保护层由有机物膜与无机物膜交替而成。
  19. 如权利要求17所述的制作方法，其中，所述柔性基板层上形成有触控线路；或者在所述柔性基板层上形成有第一阻隔层，触控线路形成在所述第一阻隔层上。
  20. 如权利要求17所述的制作方法，其中，在所述触控线路与所述低温多晶硅层之间，还设置第二阻隔层。
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