WO2019109432A1 - 太阳能电池组件的模拟组件和模拟电池芯片层的制作方法 - Google Patents

太阳能电池组件的模拟组件和模拟电池芯片层的制作方法 Download PDF

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WO2019109432A1
WO2019109432A1 PCT/CN2017/120077 CN2017120077W WO2019109432A1 WO 2019109432 A1 WO2019109432 A1 WO 2019109432A1 CN 2017120077 W CN2017120077 W CN 2017120077W WO 2019109432 A1 WO2019109432 A1 WO 2019109432A1
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layer
battery chip
teflon
solar cell
simulated
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PCT/CN2017/120077
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English (en)
French (fr)
Inventor
潘登
胡超
舒毅
陈凡
朱朋建
孙红霞
蒋奇拯
汝小宁
李涛
龙巍
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米亚索乐装备集成（福建）有限公司
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Priority to US15/779,630 priority Critical patent/US20210167242A1/en
Priority to EP17872875.4A priority patent/EP3514950A1/en
Publication of WO2019109432A1 publication Critical patent/WO2019109432A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/12—Photovoltaic modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present application relates to, but is not limited to, the field of photovoltaic power generation technology, and more particularly to a simulation component of a solar cell module and a method of fabricating an analog battery chip layer.
  • the present application provides a simulation component of a solar cell module. After lamination and heating, the electrodes on the surface of the battery chip layer are melted and resolidified to form a state similar to the battery chip in the solar cell module, forming an analog battery chip layer. By evaluating the performance of the simulated battery chip layer feedback, the solar cell production process is verified and optimized, and the production cycle of the simulated battery chip layer is effectively shortened relative to the solar cell module.
  • the present application provides a simulation component of a solar cell module for verifying and optimizing a solar cell production process after lamination at a set temperature
  • the simulation component of the solar cell module comprising: a support plate; and being placed on the support a first Teflon layer on the plate; a battery chip layer disposed on the first Teflon layer; a second Teflon layer disposed on the battery chip layer; and a second Teflon layer a foam layer on the fluorocarbon layer; wherein the support plate, the first Teflon layer, the battery chip layer, the second Teflon layer and the second foam layer are resistant to not less than 180 ° C High temperature.
  • the battery chip layer includes a plurality of battery chips, and a plurality of the battery chips are spaced apart from each other.
  • the battery chip is a flexible battery chip.
  • the support plate is a halogen-free epoxy laminate
  • the first Teflon layer and the second Teflon layer are Teflon high temperature cloth
  • the foam layer is a high temperature resistant foam board.
  • the invention also provides a method for manufacturing a simulated battery chip layer, comprising:
  • the simulated assembly is fed into the laminator, and then the laminator is evacuated and the simulated assembly is preheated;
  • the pressure acts on the analog component, and is boosted to the set value pressure within the first set time, and the temperature during pressurization is maintained at the set temperature;
  • the simulated assembly is sent out of the laminator and the simulated assembly is cooled.
  • the step of vacuuming the laminating machine and preheating the analog component is: vacuuming the laminating machine for a third set time, and pre-preparing the analog component in the third set time heat.
  • the preheating temperature is from 40 ° C to 100 ° C and the third set time is from 2 min to 6 min.
  • the first set time is 0.5 min to 2 min
  • the set value pressure is 80 Kpa to 120 Kpa
  • the set temperature is 140 ° C to 180 ° C.
  • the second set time is 5 min to 20 min.
  • the support plate is a halogen-free epoxy laminate
  • the first Teflon layer and the second Teflon layer are Teflon high temperature cloth
  • the foam layer is a high temperature resistant foam board.
  • the battery chip layer includes a plurality of spaced apart flexible battery chips; wherein the halogen-free epoxy laminate, the Teflon high temperature cloth, the high temperature resistant foam board, and the flexible battery chip are resistant High temperature less than 180 °C.
  • the simulation component of the solar cell module provided by the present application, after laminating and heating the electrode on the surface of the battery chip layer (the battery chip of the battery chip layer has an electrode on the light receiving surface, the electrode is melted and re-solidified after being pressed and heated) Changes in melting and re-solidification will occur, forming a state similar to the battery chip in the solar cell module (ie, forming a simulated battery chip layer), simulating the battery chip layer to simulate a battery chip of the solar cell module, and evaluating the performance of the simulated battery chip layer feedback. To verify and optimize the solar cell production process, the production cycle of the simulated battery chip layer is effectively shortened compared to the solar cell module.
  • the structure of the electrode is similar to the sandwich, that is, APA/nickel-plated copper core wire/APA, APA will melt and re-solidify during lamination; APA is similar to polyethylene terephthalate and adhesive resin.
  • the material of the film mainly serves as a bonding function to realize ohmic contact between the nickel-plated copper core wire and the battery.
  • the analog battery chip layer has a slightly longer storage time under conventional conditions than a battery chip that is not laminated.
  • FIG. 1 is a schematic structural view of a simulation component of a solar cell module according to an embodiment of the present application
  • FIG. 2 is a flow chart of a method for fabricating an analog battery chip layer according to an embodiment of the present application.
  • the simulation component of the solar cell module is used for verifying and optimizing the production process of the solar cell after lamination at a set temperature
  • the simulation component of the solar cell module comprises: a support plate; and the support plate is placed on the support plate a first Teflon layer; a battery chip layer disposed on the first Teflon layer; a second Teflon layer disposed on the battery chip layer; and a second Teflon disposed on the second Teflon layer a foam layer on the dragon layer; wherein the support plate, the first Teflon layer, the battery chip layer, the second Teflon layer, and the second foam layer are each resistant to not less than 180 ° C high temperature.
  • the simulation component of the solar cell module provided by the embodiment of the present invention, after laminating and heating, the electrode on the surface of the battery chip layer (the battery chip of the battery chip layer has an electrode on the light receiving surface, and the electrode is melted and heated after being pressed and heated) Curing) changes in melting and re-solidification, forming a state similar to the battery chip in the solar cell module (ie, forming an analog battery chip layer), simulating the battery chip layer to simulate a battery chip of the solar cell module, and evaluating the simulated battery chip layer feedback
  • the performance of the solar cell production process to verify and optimize the guidance, the production cycle of the simulated battery chip layer is effectively shortened relative to the solar cell module.
  • the structure of the electrode is similar to sandwich, APA / nickel-plated copper core wire / APA, APA will melt and re-solidify during lamination; APA is similar to polyethylene terephthalate and binder resin
  • the material of the film mainly serves as a bonding function to realize ohmic contact between the nickel-plated copper core wire and the battery.
  • the analog battery chip layer has a slightly longer storage time under conventional conditions than a battery chip that is not laminated.
  • the set temperature is from 140 ° C to 180 ° C, and the lamination pressure is from 80 KPa to 120 Kpa.
  • the battery chip layer comprises a plurality of battery chips, and the plurality of battery chips are spaced apart from each other and there is no overlap, ensuring that the final battery chip on the analog battery chip layer is similar to the battery chip in the solar battery module.
  • the state if overlapped, the state of the overlap after lamination at the set temperature is not similar to the state of the battery chip in the solar cell module).
  • the battery chip is a flexible battery chip 4
  • the final flexible battery chip is accurate after lamination at a set temperature, and the performance of the final flexible battery chip is closer to that of the solar battery module. Performance (ie: close to the performance of the battery chip within the solar module).
  • the battery chip laminated at the set temperature corresponds to the final battery chip
  • the flexible battery chip laminated at the set temperature corresponds to the final flexible battery chip.
  • the support plate is a halogen-free epoxy laminate 1
  • the first Teflon layer and the second Teflon layer are Teflon high temperature cloth 2
  • the layer is a high temperature resistant foam board 3, which has a short time for manufacturing a final flexible battery chip, and has a simple manufacturing process, and the analog component can be batch laminated, a halogen-free epoxy laminate 1, a Teflon high temperature cloth 2, and a high temperature resistant foam. Both boards 3 can be reused.
  • the method for fabricating the analog battery chip layer provided by the embodiment of the present invention, as shown in FIG. 2, includes the following steps:
  • Step 102 sequentially laminating a first Teflon layer, a battery chip layer, a second Teflon layer and a foam layer on the support plate to form a dummy component;
  • Step 104 feeding the dummy component into the laminating machine, then vacuuming the laminating machine and optionally preheating the simulated component through the laminating machine;
  • Step 106 pressurizing the laminating machine, the pressure acts on the analog component, and rises to a set value pressure within the first set time, and the temperature of the laminating machine acting on the analog component is maintained at the time of pressurization Constant temperature
  • Step 108 the pressure of the set value is continued for the second set time at the set temperature
  • the simulated assembly is sent out of the laminator and the simulated assembly is cooled, and then the first Teflon layer, the second Teflon layer, and the foam layer are removed, and the resulting simulated battery chip layer is separated.
  • the first Teflon layer, the second Teflon layer, and the foam layer can be reused.
  • the method for fabricating the simulated battery chip layer provided by the embodiment of the present invention, after the laminating and heating, the electrode on the surface of the battery chip layer (the battery chip of the battery chip layer has an electrode on the light receiving surface, and the electrode melts after being pressed and heated) Re-curing) changes in melting and re-solidification, forming a state similar to the battery chip in the solar cell module (ie, forming a simulated battery chip layer), simulating the battery chip layer to simulate a battery chip of the solar cell module, and evaluating the simulated battery chip layer The performance of the feedback to verify and optimize the solar cell production process.
  • the fabrication cycle of the analog battery chip layer is effectively shortened relative to the solar cell module.
  • the structure of the electrode is similar to sandwich, APA / nickel-plated copper core wire / APA, APA will melt and re-solidify during lamination; APA is similar to polyethylene terephthalate and binder resin
  • the material of the film mainly serves as a bonding function to realize ohmic contact between the nickel-plated copper core wire and the battery.
  • step 104 the purpose of preheating the analog component is to increase the temperature of the analog component to the set temperature more quickly in step 106, the purpose of which is to reduce the production time of the analog battery chip layer, and when time permits.
  • the process of removing the preheating is also within the scope of protection of the present application.
  • the step of vacuuming the laminating machine and optionally preheating the simulated assembly is: evacuating the laminating machine for a third set time, and optionally within a third set time Preheat the analog components. Preheating can make the analog components easier to heat up to the set temperature in the subsequent process, effectively shortening the heating time of the analog components of the subsequent process, and reducing the production time of the analog battery chip layer.
  • the preheating temperature is from 40 ° C to -100 ° C (such as 40 ° C, 60 ° C, 80 ° C or 100 ° C, etc., the purpose of the application can be achieved), the third set time is 2 min to 6 min (eg: 2 min)
  • the purpose of the present application can be achieved by 4 minutes or 6 minutes, and the production cycle of the simulated battery chip layer is prolonged after more than 6 minutes.
  • the first set time may be 0.5 min to 2 min (eg, 30 s, 1 min, 2 min, etc., the purpose of the application may be achieved, and the production cycle of the simulated battery chip layer may be extended over 2 min).
  • the setting value may be 80Kpa to 120Kpa (for example, 80Kpa, 100Kpa or 120Kpa, etc., the purpose of the application may be achieved), and the set temperature may be 140 ° C to 180 ° C (such as 140 ° C, 150 ° C, 160 ° C, 170)
  • the purpose of the present application can be achieved at °C or 180 °C.
  • the second setting time is 5 min to 20 min (for example, 5 min, 10 min, 15 min, or 20 min, etc., the purpose of the application may be achieved, and the production cycle of the simulated battery chip layer may be extended over 20 min).
  • the support plate is a halogen-free epoxy laminate
  • the first Teflon layer and the second Teflon layer are Teflon high temperature cloth
  • the foam layer is a high temperature resistant foam board.
  • the battery chip layer includes a plurality of spaced apart flexible battery chips; and the halogen-free epoxy laminate, the Teflon high temperature cloth, the high temperature resistant foam board, and the flexible battery chip are resistant to not less than 180 The high temperature of °C prevents material damage during heating and pressurization.
  • the electrode on the surface of the battery chip layer after lamination and heating may melt and re-solidify.
  • the battery chip of the battery chip layer has an electrode on the light-receiving surface, and the electrode is melted and re-solidified after being pressed and heated
  • the analog battery chip layer has a slightly longer storage time under conventional conditions than a battery chip that is not laminated.
  • connection may be a fixed connection, a detachable connection, or an integral Connections; they can be connected directly or indirectly through intermediate media.
  • connecting may be a fixed connection, a detachable connection, or an integral Connections; they can be connected directly or indirectly through intermediate media.
  • the simulation component of the solar cell module provided by the present application, after lamination and heating, the electrode on the surface of the battery chip layer undergoes a change of melting and resolidification, forming a state similar to the battery chip in the solar cell module, forming an analog battery chip layer, and simulating
  • the battery chip layer is simulated into a battery chip of a solar cell module, and the solar cell production process is verified and optimized by evaluating the performance of the simulated battery chip layer feedback, and the cycle of the simulated battery chip layer is effectively shortened relative to the solar cell module.

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Abstract

一种太阳能电池组件的模拟组件和模拟电池芯片层的制作方法，该太阳能电池组件的模拟组件包括：支撑板（1）；放置于支撑板上的第一特氟龙层（2）；放置于第一特氟龙层上的电池芯片层（4）；放置于电池芯片层上的第二特氟龙层（2）；和放置于第二特氟龙层上的泡沫层（3）。

Description

太阳能电池组件的模拟组件和模拟电池芯片层的制作方法 技术领域
本申请涉及，但不限于光伏发电技术领域，尤指一种太阳能电池组件的模拟组件和一种模拟电池芯片层的制作方法。
背景
目前全球太阳能电池行业已经发展到了一个比较成熟的阶段，太阳能电池组件层压封装也有了相对成熟的技术。通过评估太阳能电池组件的表现(也就是相当于评估其核心部件柔性电池线片的表面)来验证太阳能电池的生产工艺是现阶段最常见的方法，然而，此方法主要的缺陷是太阳能电池组件制作周期长，其表现不能及时得到反馈。
发明概述
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
本申请提供了一种太阳能电池组件的模拟组件，经过层压和加热后电池芯片层表面的电极会发生融化再固化的改变，形成与太阳能电池组件中电池芯片相似的状态，形成模拟电池芯片层，通过评估模拟电池芯片层反馈的表现来对太阳能电池生产工艺做相应验证以及优化指导，模拟电池芯片层的制作周期相对于太阳能电池组件有效缩短。
本申请提供了一种太阳能电池组件的模拟组件，用于在设定温度处层压后验证和优化太阳能电池的生产工艺，所述太阳能电池组件的模拟组件包括：支撑板；放置于所述支撑板上的第一特氟龙层；放置于所述第一特氟龙层上的电池芯片层；放置于所述电池芯片层上的第二特氟龙层；和放置于所述第二特氟龙层上的泡沫层；其中，所述支撑板、所述第一特氟龙层、电池芯片层、所述第二特氟龙层和所述第二泡沫层均可耐不小于180℃的高温。
可选地，所述电池芯片层包括多个电池芯片，且多个所述电池芯片相互 间隔设置。
可选地，所述电池芯片为柔性电池芯片。
可选地，所述支撑板为无卤环氧层压板，所述第一特氟龙层和所述第二特氟龙层为特氟龙高温布，所述泡沫层为耐高温泡沫板。
本发明还提供了一种模拟电池芯片层的制作方法，包括：
在支撑板上依次叠层设置第一特氟龙层、电池芯片层、第二特氟龙层和泡沫层，形成模拟组件；
将模拟组件送入层压机内，然后对层压机进行抽真空以及对模拟组件进行预热；
对层压机进行加压，压力作用在模拟组件上、并在第一设定时间内升压至设定值压力，加压时的温度保持在设定温度；
在设定温度处使设定值压力持续第二设定时间；
将模拟组件送出层压机并且冷却模拟组件。
可选地，所述对层压机进行抽真空以及对模拟组件进行预热的步骤为：对层压机进行抽真空第三设定时间、并在第三设定时间内对模拟组件进行预热。
可选地，预热的温度为40℃至100℃，所述第三设定时间为2min至6min。
可选地，所述第一设定时间为0.5min至2min，所述设定值压力为80Kpa至120Kpa，所述设定温度为140℃至180℃。
可选地，所述第二设定时间为5min至20min。
可选地，所述支撑板为无卤环氧层压板，所述第一特氟龙层和所述第二特氟龙层为特氟龙高温布，所述泡沫层为耐高温泡沫板，所述电池芯片层包括多个间隔设置的柔性电池芯片；其中，所述无卤环氧层压板、所述特氟龙高温布、所述耐高温泡沫板和所述柔性电池芯片均可耐不小于180℃的高温。
本申请提供的太阳能电池组件的模拟组件，经过层压和加热后电池芯片层表面的电极(电池芯片层的电池芯片的受光面上具有电极，该电极受压和 受热后会融化和再固化)会发生融化再固化的改变，形成与太阳能电池组件中电池芯片相似的状态(即形成模拟电池芯片层)，模拟电池芯片层模拟成太阳能电池组件的电池芯片，通过评估模拟电池芯片层反馈的表现来对太阳能电池生产工艺做相应验证以及优化指导，模拟电池芯片层的制作周期相对于太阳能电池组件有效缩短。
其中，电极的结构类似于三明治，即APA/镀镍铜芯线/APA，在层压过程中APA会融化再固化；APA是含有聚对苯二甲酸乙二酯以及粘合树脂的一种类似于薄膜的材料，主要起粘接的作用，实现镀镍铜芯线和电池的欧姆接触。
而且，模拟电池芯片层在常规条件下储存时间要比没有层压的电池芯片稍长。
本申请的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得更加清楚，或者通过实施本申请而了解。本申请的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本申请技术方案的进一步理解，并且构成说明书的一部分，与本申请的实施例一起用于解释本申请的技术方案，并不构成对本申请技术方案的限制。
图1为本申请一个实施例所述的太阳能电池组件的模拟组件的结构示意图；
图2为本申请一个实施例所述的模拟电池芯片层的制作方法的流程图。
其中，图1中附图标记与部件名称之间的对应关系为：
1无卤环氧层压板，2特氟龙高温布，3耐高温泡沫板，4柔性电池芯片。
发明详述
为使本申请的目的、技术方案和优点更加清楚明白，下文中将结合附图对本申请的实施例进行详细说明。需要说明的是，在不冲突的情况下，本申 请中的实施例及实施例中的特征可以相互任意组合。
在下面的描述中阐述了很多具体细节以便于充分理解本申请，但是，本申请还可以采用其他不同于在此描述的方式来实施，因此，本申请的保护范围并不受下面公开的具体实施例的限制。
下面结合附图描述本申请一些实施例的太阳能电池组件的模拟组件和模拟电池芯片层的制作方法。
本发明实施例提供的太阳能电池组件的模拟组件，用于在设定温度处层压后验证和优化太阳能电池的生产工艺，该太阳能电池组件的模拟组件包括：支撑板；放置于所述支撑板上的第一特氟龙层；放置于所述第一特氟龙层上的电池芯片层；放置于所述电池芯片层上的第二特氟龙层；和放置于所述第二特氟龙层上的泡沫层；其中，所述支撑板、所述第一特氟龙层、电池芯片层、所述第二特氟龙层和所述第二泡沫层均可耐不小于180℃的高温。
本发明实施例提供的太阳能电池组件的模拟组件，经过层压和加热后电池芯片层表面的电极(电池芯片层的电池芯片的受光面上具有电极，该电极受压和受热后会融化和再固化)会发生融化再固化的改变，形成与太阳能电池组件中电池芯片相似的状态(即形成模拟电池芯片层)，模拟电池芯片层模拟成太阳能电池组件的电池芯片，通过评估模拟电池芯片层反馈的表现来对太阳能电池生产工艺做相应验证以及优化指导，模拟电池芯片层的制作周期相对于太阳能电池组件有效缩短。
其中，电极的结构类似于三明治，APA/镀镍铜芯线/APA，在层压过程中APA会融化再固化；APA是含有聚对苯二甲酸乙二酯以及粘合树脂的一种类似于薄膜的材料，主要起粘接的作用，实现镀镍铜芯线和电池的欧姆接触。
而且，模拟电池芯片层在常规条件下储存时间要比没有层压的电池芯片稍长。
设定温度为140℃至180℃，层压的压力为80Kpa至120Kpa。
其中，所述电池芯片层包括多个电池芯片，且多个所述电池芯片相互间隔设置、不存在重叠的情况，确保模拟电池芯片层上的终态电池芯片与太阳能电池组件中电池芯片具有相似的状态(若重叠，则在设定温度处层压后重 叠处状态与太阳能电池组件中电池芯片的状态不相似)。
较好地，如图1所示，所述电池芯片为柔性电池芯片4，在设定温度处层压后终态柔性电池芯片精度可靠，终态柔性电池芯片的性能更接近于太阳能电池组件的性能(即：接近于太阳能电池组件内的电池芯片的性能)。
在设定温度处层压后的电池芯片对应于终态电池芯片，在设定温度处层压后的柔性电池芯片对应于终态柔性电池芯片。具体地，如图1所示，所述支撑板为无卤环氧层压板1，所述第一特氟龙层和所述第二特氟龙层为特氟龙高温布2，所述泡沫层为耐高温泡沫板3，其制造终态柔性电池芯片的时间短，且制作工艺简单，模拟组件能够进行批量层压，无卤环氧层压板1、特氟龙高温布2和耐高温泡沫板3均可以重复利用。
本发明实施例提供的模拟电池芯片层的制作方法，如图2所示，包括以下步骤：
步骤102，在支撑板上依次叠层放置第一特氟龙层、电池芯片层、第二特氟龙层和泡沫层，形成模拟组件；
步骤104，将模拟组件送入层压机内，然后对层压机进行抽真空以及任选地通过层压机对模拟组件进行预热；
步骤106，对层压机进行加压，压力作用在模拟组件上、并在第一设定时间内升至设定值的压力，加压时层压机作用在模拟组件上的温度保持在设定温度；
步骤108，在设定温度下使设定值的压力持续第二设定时间；
步骤110，将模拟组件送出层压机并且冷却模拟组件，然后去除第一特氟龙层、第二特氟龙层和泡沫层，分离出制成的模拟电池芯片层。第一特氟龙层、第二特氟龙层和泡沫层可以重复利用。
本发明实施例提供的模拟电池芯片层的制作方法，经过层压和加热后电池芯片层表面的电极(电池芯片层的电池芯片的受光面上具有电极，该电极受压和受热后会融化和再固化)会发生融化再固化的改变，形成与太阳能电池组件中电池芯片相似的状态(即形成模拟电池芯片层)，模拟电池芯片层模拟成太阳能电池组件的电池芯片，通过评估模拟电池芯片层反馈的表现来 对太阳能电池生产工艺做相应验证以及优化指导。
而且，模拟电池芯片层的制作周期相对于太阳能电池组件得到了有效地缩短。
其中，电极的结构类似于三明治，APA/镀镍铜芯线/APA，在层压过程中APA会融化再固化；APA是含有聚对苯二甲酸乙二酯以及粘合树脂的一种类似于薄膜的材料，主要起粘接的作用，实现镀镍铜芯线和电池的欧姆接触。
步骤104中，对模拟组件进行预热目的是为了在步骤106中模拟组件的温度更快速的升至设定温度，其目的是减少模拟电池芯片层的制作时间，在时间允许的情况下也可去除预热的过程，也应属于本申请的保护范围内。
具体地，所述对层压机进行抽真空以及任选地对模拟组件进行预热的步骤为：对层压机进行抽真空第三设定时间、并任选地在第三设定时间内对模拟组件进行预热。预热可使得后续工艺过程中模拟组件更容易升温至设定温度，有效缩短后续工艺的模拟组件的升温时间，也就减少模拟电池芯片层的制作时间。预热的温度为40℃至～100℃(如40℃、60℃、80℃或100℃等，均可实现本申请的目的)，所述第三设定时间为2min至6min(如：2min、4min或6min等，均可实现本申请的目的，超过6min则模拟电池芯片层的制作周期会延长)。
具体地，所述第一设定时间可以为0.5min至2min(如30s，1min、2min等，均可实现本申请的目的，超过2min则模拟电池芯片层的制作周期会延长)，所述设定值可以为80Kpa至120Kpa(如：80Kpa、100Kpa或120Kpa等，均可实现本申请的目的)，所述设定温度可以为140℃至180℃(如140℃、150℃、160℃、170℃或180℃等，均可实现本申请的目的)。
可选地，所述第二设定时间为5min至20min(如5min、10min、15min或20min等，均可实现本申请的目的，超过20min则模拟电池芯片层的制作周期会延长)。
具体地，所述支撑板为无卤环氧层压板，所述第一特氟龙层和所述第二特氟龙层为特氟龙高温布，所述泡沫层为耐高温泡沫板，所述电池芯片层包括多个间隔设置的柔性电池芯片；且所述无卤环氧层压板、所述特氟龙高温 布、所述耐高温泡沫板和所述柔性电池芯片均可耐不小于180℃的高温，防止加热加压时材料损坏。
综上所述，经过层压和加热后电池芯片层表面的电极(电池芯片层的电池芯片的受光面上具有电极，该电极受压和受热后会融化和再固化)会发生融化再固化的改变，形成与太阳能电池组件中电池芯片相似的状态(即形成模拟电池芯片层)，模拟电池芯片层模拟成太阳能电池组件的电池芯片，通过评估模拟电池芯片层反馈的表现来对太阳能电池生产工艺做相应验证以及优化指导，模拟电池芯片层的制作周期相对于太阳能电池组件有效缩短。
而且，模拟电池芯片层在常规条件下储存时间要比没有层压的电池芯片稍长。
在本申请的描述中，术语“安装”、“相连”、“连接”、“固定”等均应做广义理解，例如，“连接”可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本说明书的描述中，术语“一个实施例”、“一些实施例”、“具体实施例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或特点包含于本申请的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或实例。而且，描述的具体特征、结构、材料或特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
本公开内容是本申请实施例的原则的示例，并非对本申请作出任何形式上或实质上的限定，或将本申请限定到具体的实施方案。对本领域的技术人员而言，很显然本申请实施例的技术方案的要素、方法和系统等，可以进行变动、改变、改动、演变，而不背离如上所述的本申请的实施例、技术方案的，如权利要求中所定义的原理、精神和范围。这些变动、改变、改动、演变的实施方案均包括在本申请的等同实施例内，这些等同实施例均包括在本申请的由权利要求界定的范围内。虽然可以许多不同形式来使本申请实施例具体化，但此处详细描述的是本发明的一些实施方案。此外，本申请的实施 例包括此处所述的各种实施方案的一些或全部的任意可能的组合，也包括在本申请的由权利要求界定的范围内。在本申请中或在任一个引用的专利、引用的专利申请或其它引用的资料中任何地方所提及的所有专利、专利申请和其它引用资料据此通过引用以其整体并入。
以上公开内容规定为说明性的而不是穷尽性的。对于本领域技术人员来说，本说明书会暗示许多变化和可选择方案。所有这些可选择方案和变化旨在被包括在本权利要求的范围内，其中术语“包括”意思是“包括，但不限于”。在此完成了对本发明可选择的实施方案的描述。本领域技术人员可认识到此处所述的实施方案的其它等效变换，这些等效变换也为由附于本文的权利要求所包括。
工业实用性
本申请提供的太阳能电池组件的模拟组件，经过层压和加热后电池芯片层表面的电极会发生融化再固化的改变，形成与太阳能电池组件中电池芯片相似的状态，形成模拟电池芯片层，模拟电池芯片层模拟成太阳能电池组件的电池芯片，通过评估模拟电池芯片层反馈的表现来对太阳能电池生产工艺做相应验证以及优化指导，模拟电池芯片层的周期相对于太阳能电池组件有效缩短。

Claims (10)

  1. 一种太阳能电池组件的模拟组件，用于在设定温度处层压后验证和优化太阳能电池的生产工艺，所述太阳能电池组件的模拟组件包括：
    支撑板；
    放置于所述支撑板上的第一特氟龙层；
    放置于所述第一特氟龙层上的电池芯片层；
    放置于所述电池芯片层上的第二特氟龙层；和
    放置于所述第二特氟龙层上的泡沫层；
    其中，所述支撑板、所述第一特氟龙层、电池芯片层、所述第二特氟龙层和所述第二泡沫层均可耐不小于180℃的高温。
  2. 根据权利要求1所述的太阳能电池组件的模拟组件，其中，所述电池芯片层包括多个电池芯片，且多个所述电池芯片相互间隔设置。
  3. 根据权利要求2所述的太阳能电池组件的模拟组件，其中，所述电池芯片为柔性电池芯片。
  4. 根据权利要求1至3中任一项所述的太阳能电池组件的模拟组件，其中，所述支撑板为无卤环氧层压板，所述第一特氟龙层和所述第二特氟龙层为特氟龙高温布，所述泡沫层为耐高温泡沫板。
  5. 一种模拟电池芯片层的制作方法，包括：
    在支撑板上依次叠层放置第一特氟龙层、电池芯片层、第二特氟龙层和泡沫层，形成模拟组件；
    将模拟组件送入层压机内，然后对所述层压机进行抽真空以及任选地对所述模拟组件进行预热；
    对层压机进行加压，压力作用在所述模拟组件上、并在第一设定时间内升压至设定值压力，加压时的温度保持在设定温度；
    在设定温度处使设定值压力持续第二设定时间；
    将所述模拟组件送出所述层压机并且冷却所述模拟组件。
  6. 根据权利要求5所述的模拟电池芯片层的制作方法，其中，所述对所述层压机进行抽真空以及任选地对所述模拟组件进行预热的步骤为：
    对所述层压机进行抽真空第三设定时间、并任选地在第三设定时间内对所述模拟组件进行预热。
  7. 根据权利要求6所述的模拟电池芯片层的制作方法，其中，预热的温度为40℃至100℃，所述第三设定时间为2min至6min。
  8. 根据权利要求5至7任一项所述的模拟电池芯片层的制作方法，其中，所述第一设定时间为0.5min至2min，所述设定值压力为80Kpa至120Kpa，所述设定温度为140℃至180℃。
  9. 根据权利要求5至8任一项所述的模拟电池芯片层的制作方法，其中，所述第二设定时间为5min至20min。
  10. 根据权利要求5至9任一项所述的模拟电池芯片层的制作方法，其中，所述支撑板为无卤环氧层压板，所述第一特氟龙层和所述第二特氟龙层为特氟龙高温布，所述泡沫层为耐高温泡沫板，所述电池芯片层包括多个间隔设置的柔性电池芯片；
    其中，所述无卤环氧层压板、所述特氟龙高温布、所述耐高温泡沫板和所述柔性电池芯片均可耐不小于180℃的高温。
PCT/CN2017/120077 2017-12-06 2017-12-29 太阳能电池组件的模拟组件和模拟电池芯片层的制作方法 WO2019109432A1 (zh)

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