WO2019094929A1 - Linearized energetic radio-frequency plasma ion source - Google Patents

Linearized energetic radio-frequency plasma ion source Download PDF

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Publication number
WO2019094929A1
WO2019094929A1 PCT/US2018/060728 US2018060728W WO2019094929A1 WO 2019094929 A1 WO2019094929 A1 WO 2019094929A1 US 2018060728 W US2018060728 W US 2018060728W WO 2019094929 A1 WO2019094929 A1 WO 2019094929A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
chamber body
ion source
plasma chamber
voltage
Prior art date
Application number
PCT/US2018/060728
Other languages
English (en)
French (fr)
Inventor
Craig A. Outten
Original Assignee
Denton Vacuum, L.L.C.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denton Vacuum, L.L.C. filed Critical Denton Vacuum, L.L.C.
Priority to JP2020544376A priority Critical patent/JP7206286B2/ja
Priority to CN201880068516.6A priority patent/CN111247617B/zh
Priority to KR1020207015119A priority patent/KR102389512B1/ko
Priority to EP18876928.5A priority patent/EP3711078B1/de
Publication of WO2019094929A1 publication Critical patent/WO2019094929A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
PCT/US2018/060728 2017-11-13 2018-11-13 Linearized energetic radio-frequency plasma ion source WO2019094929A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020544376A JP7206286B2 (ja) 2017-11-13 2018-11-13 線形化されたエネルギーの無線周波数プラズマイオン供給源、薄膜堆積装置、およびプラズマイオンビーム発生方法
CN201880068516.6A CN111247617B (zh) 2017-11-13 2018-11-13 线性高能射频等离子体离子源
KR1020207015119A KR102389512B1 (ko) 2017-11-13 2018-11-13 선형화된 활성 무선 주파수 플라즈마 이온 소스
EP18876928.5A EP3711078B1 (de) 2017-11-13 2018-11-13 Linearisierte energetische hochfrequenz-plasmaionenquelle

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762585126P 2017-11-13 2017-11-13
US62/585,126 2017-11-13
US16/184,177 US10815570B2 (en) 2017-11-13 2018-11-08 Linearized energetic radio-frequency plasma ion source
US16/184,177 2018-11-08

Publications (1)

Publication Number Publication Date
WO2019094929A1 true WO2019094929A1 (en) 2019-05-16

Family

ID=66431263

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2018/060728 WO2019094929A1 (en) 2017-11-13 2018-11-13 Linearized energetic radio-frequency plasma ion source

Country Status (7)

Country Link
US (1) US10815570B2 (de)
EP (1) EP3711078B1 (de)
JP (1) JP7206286B2 (de)
KR (1) KR102389512B1 (de)
CN (1) CN111247617B (de)
TW (1) TWI699812B (de)
WO (1) WO2019094929A1 (de)

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US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
US11189464B2 (en) * 2019-07-17 2021-11-30 Beijing E-town Semiconductor Technology Co., Ltd. Variable mode plasma chamber utilizing tunable plasma potential
CN110712094B (zh) * 2019-09-06 2021-07-23 中国兵器科学研究院宁波分院 降低离子束抛光光学元件表面污染的方法
CN112899639B (zh) * 2019-12-04 2022-08-19 江苏菲沃泰纳米科技股份有限公司 类金刚石薄膜制备装置和制备方法
CN111741584B (zh) * 2020-05-26 2021-12-28 中国原子能科学研究院 一种d+离子源
CN113903644A (zh) * 2020-06-22 2022-01-07 江苏鲁汶仪器有限公司 一种用于离子束刻蚀腔的挡件
KR20220069148A (ko) * 2020-11-19 2022-05-27 삼성전자주식회사 반도체 소자의 제조 장치 및 반도체 소자의 제조 방법
CN113285223B (zh) * 2021-05-24 2023-10-10 中国科学院合肥物质科学研究院 一种分立式π/2相位差离子回旋共振加热天线
US20230083497A1 (en) * 2021-09-15 2023-03-16 Applied Materials, Inc. Uniform plasma linear ion source
US20230102972A1 (en) * 2021-09-27 2023-03-30 Applied Materials, Inc. Active temperature control for rf window in immersed antenna source
KR102399398B1 (ko) * 2021-09-27 2022-05-18 아리온주식회사 알에프 스플리트 조정 시스템

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US20020004309A1 (en) * 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
US20140124363A1 (en) * 2011-07-20 2014-05-08 Canon Anelva Corporation Ion beam generator and ion beam plasma processing apparatus
US20160111241A1 (en) * 2014-10-16 2016-04-21 Varian Semiconductor Equipment Associates, Inc. Ion Beam Uniformity Control
WO2018202584A1 (en) * 2017-05-03 2018-11-08 Agc Glass Europe Linear plasma source with segmented hollow cathode

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US20020004309A1 (en) * 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
US20140124363A1 (en) * 2011-07-20 2014-05-08 Canon Anelva Corporation Ion beam generator and ion beam plasma processing apparatus
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WO2018202584A1 (en) * 2017-05-03 2018-11-08 Agc Glass Europe Linear plasma source with segmented hollow cathode

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Also Published As

Publication number Publication date
CN111247617B (zh) 2022-11-18
CN111247617A (zh) 2020-06-05
US20190145005A1 (en) 2019-05-16
JP7206286B2 (ja) 2023-01-17
US10815570B2 (en) 2020-10-27
EP3711078B1 (de) 2023-06-07
KR102389512B1 (ko) 2022-04-22
EP3711078A4 (de) 2021-09-08
JP2021502688A (ja) 2021-01-28
EP3711078C0 (de) 2023-06-07
TWI699812B (zh) 2020-07-21
TW201931415A (zh) 2019-08-01
KR20200075868A (ko) 2020-06-26
EP3711078A1 (de) 2020-09-23

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