封装焊线加热组合单元及其进行封装的方法Package wire bonding heating unit and method for packaging same
技术领域Technical field
本发明总地涉及封装技术领域,具体涉及一种封装焊线加热组合单元及其进行封装的方法。The present invention generally relates to the field of packaging technology, and in particular, to a package wire bonding heating unit and a method for packaging the same.
背景技术Background technique
随着集成电路的功能越来越强、性能和集成度越来越高,以及新型的集成电路出现,封装技术在集成电路产品中扮演着越来越重要的角色。所谓封装技术是一种将集成电路用绝缘的塑料或陶瓷材料打包的技术,封装也可以说是指安装半导体集成电路芯片的外壳,它不仅起着安防、固定、密封、保护芯片和增强导热性能的作用,而且还是沟通芯片内部世界与外部电路的桥梁——芯片上的接点用导线连接到封装外壳的引脚上,这些引脚又通过印刷电路板上的导线与其它器件建立连接。As integrated circuits become more powerful, performance and integration become higher, and new types of integrated circuits emerge, packaging technology is playing an increasingly important role in integrated circuit products. The so-called packaging technology is a technology for packaging integrated circuits with insulating plastic or ceramic materials. The package can also be said to be a housing for mounting semiconductor integrated circuit chips, which not only plays a role in security, fixing, sealing, protection of chips and enhanced thermal conductivity. The role, but also the bridge between the internal world of the chip and the external circuit - the contacts on the chip are connected to the pins of the package by wires, which in turn are connected to other devices through the wires on the printed circuit board.
在封装工艺中,压焊的目的是将电极引到芯片上,完成产品内外引线的连接工作,是封装技术中的关键环节。常见的封装机构是将芯片固定在一个平面的基板上,然后在基板的一个平面上利用封装层将该芯片封装在该基板上。在这个过程中,基板在载片轨道上步进到达键合区域,底板升起到预设高度与基板的背面接触,热压板下降到预设高度与基板的正面接触,然后底板开启真空吸附,牢固吸附基板背面,底板和热压板同时压合,完成封装。In the packaging process, the purpose of pressure welding is to lead the electrodes onto the chip to complete the connection of the inner and outer leads of the product, which is a key link in the packaging technology. A common packaging mechanism is to mount the chip on a flat substrate, and then package the chip on the substrate by using an encapsulation layer on one plane of the substrate. In this process, the substrate is stepped on the carrier track to reach the bonding area, the bottom plate is raised to a preset height to contact the back surface of the substrate, the hot plate is lowered to a preset height to contact the front surface of the substrate, and then the bottom plate is opened for vacuum adsorption. The substrate is firmly adsorbed on the back side of the substrate, and the bottom plate and the hot plate are simultaneously pressed to complete the package.
目前常用的的热压板在封装过程中,一般采取四面压合或两面压合的方法,其中四面压合容易压坏产品或碰线,需加宽单颗产品之间的间距;两面压合会使压合不稳定,容易造成基材翘曲,真空不能吸附,不能持续稳定的作业。At present, the commonly used hot plate is generally subjected to four-side pressing or two-side pressing in the packaging process, wherein four-sided pressing is easy to crush the product or touch the wire, and the spacing between the individual products needs to be widened; The pressure is unstable, the substrate is easily warped, the vacuum cannot be adsorbed, and the operation cannot be continued stably.
发明内容Summary of the invention
本发明的目的在于提供一种封装焊线加热组合单元,在封装过程中采用此封装焊线加热组合单元,可以稳定压合基板,同时不会造成基材翘曲,可以稳定持续的进行封装作业。The object of the present invention is to provide a package wire bonding heating unit, which can use the package wire bonding heating unit in the packaging process to stably press the substrate without causing warpage of the substrate, and can stably and continuously perform the packaging operation. .
为达到上述目的,本发明提供了一种封装焊线加热组合单元,包括:底板和热压板,所述底板用于提供压焊平台和压焊时所需温度,基板位于所述底板和所述热压板之间,在水平轨道上步进;其特征在于,In order to achieve the above object, the present invention provides a package wire bonding heating unit comprising: a bottom plate and a hot pressing plate for providing a pressure welding platform and a temperature required for pressure welding, the substrate being located at the bottom plate and the Stepping between the hot platens on the horizontal track; characterized in that
所述热压板与所述基板相对的表面设有压柱;所述压柱垂直固定于所述热压板的表面,与所述基板步进方向垂直,对应于所述基板上贴装芯片的单元之间的空隙;所述压柱的高度大于所述贴装芯片的单元的高度;所述压柱能够压紧所述基板;a surface of the hot platen opposite to the substrate is provided with a pressing column; the pressing column is vertically fixed to a surface of the hot pressing plate, perpendicular to a step direction of the substrate, and corresponding to a chip mounted on the substrate a gap between the cells; the height of the column is greater than the height of the unit of the chip; the column can compress the substrate;
所述热压板中部镂空,所述镂空部位对应所述基板的键合区域。The central portion of the hot platen is hollowed out, and the hollow portion corresponds to a bonding area of the substrate.
进一步地,所述热压板平行于所述基板步进方向的端部设置有压筋,所述压筋的凸出方向与所述压柱的凸出方向相同,顶面与所述基板平行;所述压筋的高度不小于所述压柱的高度;所述压筋与所述基板的端部相配合,能够压紧所述基板。Further, the hot pressing plate is provided with a pressing rib parallel to the end portion of the substrate in the step direction, the protruding direction of the pressing rib is the same as the protruding direction of the pressing column, and the top surface is parallel to the substrate The height of the rib is not less than the height of the ram; the rib is matched with the end of the substrate to enable the substrate to be pressed.
进一步地,所述压筋的长度不小于所述基板的键合区域在所述基板步进方向上的长度。Further, the length of the rib is not less than the length of the bonding region of the substrate in the step direction of the substrate.
进一步地,所述热压板平行于所述基板步进方向的两端均设置有压筋。Further, the hot pressing plate is provided with a pressing rib at both ends parallel to the step direction of the substrate.
进一步地,所述热压板整体为金属材质。Further, the hot platen is entirely made of metal.
进一步地,所述压柱为圆柱形,顶端与所述基板的表面平行。Further, the pressing column is cylindrical, and the top end is parallel to the surface of the substrate.
进一步地,所述压柱的直径不大于350μm。Further, the diameter of the pressure column is not more than 350 μm.
进一步地,所述压柱对应布置于所述基板上贴装芯片的单元之间空隙的中间位置。Further, the pressing column is correspondingly disposed at an intermediate position of a gap between units of the chip on which the chip is mounted.
一种利用上述封装焊线加热组合单元进行封装的的方法,包括:A method for packaging by using the above packaged wire heating combination unit, comprising:
步骤S1、设备开机,将基板在所述水平轨道上步进到达键合区域;Step S1, the device is powered on, and the substrate is stepped on the horizontal track to reach the bonding area;
步骤S2、将所述底板升起到预设高度,与所述基板背面接触;Step S2, raising the bottom plate to a preset height, and contacting the back surface of the substrate;
步骤S3、将所述热压板下降到预设高度,与所述基板正面接触;在此过程中,当所述基板有翘曲时,所述压柱将最先与所述基板的正面接触,随着所述热压板的下降,将所述基板翘曲部分下压至水平;Step S3, the hot platen is lowered to a preset height to be in contact with the front surface of the substrate; in the process, when the substrate is warped, the press column will first contact the front surface of the substrate. Pressing the warped portion of the substrate down to a level as the hot platen is lowered;
步骤S4、将所述底板开启真空吸附动作,牢固吸附所述基板的背面;Step S4, the bottom plate is opened to vacuum adsorption operation, and the back surface of the substrate is firmly adsorbed;
步骤S5、所述底板与所述热压板一起动作,将所述基板完全压合,完成压焊;Step S5, the bottom plate works together with the hot pressing plate, and the substrate is completely pressed to complete the pressure welding;
步骤S6、退开所述底板和所述热压板,所述基板在所述水平轨道上步进,所述底板和所述热压板再次分别动作至预设高度,所述底板和所述热压板一起将所述基板完全压合,完成压焊;如此反复,直至压焊封装完成,设备停机。Step S6, retreating the bottom plate and the hot platen, the substrate is stepped on the horizontal track, the bottom plate and the hot platen are respectively moved to a preset height, the bottom plate and the bottom plate The hot plate together presses the substrate completely to complete the pressure welding; this is repeated until the pressure welding package is completed and the equipment is shut down.
利用本发明的封装焊线加热组合单元进行封装作业时,在基板有翘曲时,压柱将最先与基板的正面接触,将基板翘曲部分下压至水平,压合稳定,充分利用了基板上贴装芯片的单元之间的间隙,能够在不碰线和不压坏产品的情形下连续稳定的进行封装作业。When the packaged wire heating combination unit of the present invention is used for packaging work, when the substrate is warped, the pressing column will first contact the front surface of the substrate, and the warpage portion of the substrate is pressed down to the horizontal level, and the pressing is stable, and the use is fully utilized. The gap between the cells on which the chip is mounted on the substrate enables continuous and stable packaging without touching the wire and without crushing the product.
附图说明DRAWINGS
图1为本发明封装焊线加热组合单元的示意图。1 is a schematic view of a packaged wire heating combination unit of the present invention.
图2为本发明热压板的主视图。Figure 2 is a front elevational view of the hot plate of the present invention.
图3为图2所示热压板的A-A视图。Figure 3 is an A-A view of the hot platen shown in Figure 2.
附图标记说明:Description of the reference signs:
10-底板10-base plate
20-热压板;20-hot platen;
201-压柱;201-pressing column;
202-压筋;202-pressure rib;
30-基板。30-substrate.
具体实施方式Detailed ways
以下结合附图和实施例,对本发明的具体实施方式进行更加详细的说明,以便能够更好地理解本发明的方案以及其各个方面的优点。然而,以下描述的具体实施方式和实施例仅是说明的目的,而不是对本发明的限制。The embodiments of the present invention will be described in more detail in conjunction with the accompanying drawings and embodiments in order to provide a better understanding of the embodiments of the invention and the advantages thereof. However, the specific embodiments and examples described below are illustrative only and not limiting of the invention.
如图1和图3所示所示,本发明的封装焊线加热组合单元包括底板10和热压板20。底板10用于提供压焊平台和压焊时所需温度。热压板20中部镂空,镂空部位对应基板30的键合区域,能够透过镂空部位对基板30进行压焊。进行封装作业时,基板30位于底板和热压板20之间,在水平轨道上步进。热压板20与基板30相对的表面设有压柱201;压柱201垂直固定于热压板20的表面,与基板30步进方向垂直,对应于基板30上贴装芯片的单元之间的空隙;压柱201的高度大于贴装芯片的单元的高度;压柱201能够压紧所述基板。As shown in FIGS. 1 and 3, the packaged wire heating assembly unit of the present invention includes a bottom plate 10 and a hot platen 20. The bottom plate 10 is used to provide the temperature required for the pressure welding platform and pressure welding. The middle portion of the hot platen 20 is hollowed out, and the hollow portion corresponds to the bonding region of the substrate 30, and the substrate 30 can be pressure-welded through the hollow portion. During the packaging operation, the substrate 30 is placed between the bottom plate and the hot platen 20 and stepped on a horizontal track. The surface of the hot platen 20 opposite to the substrate 30 is provided with a pressing column 201; the pressing column 201 is vertically fixed to the surface of the hot platen 20, perpendicular to the step direction of the substrate 30, corresponding to the unit between the units on which the chip is mounted on the substrate 30. The gap; the height of the column 201 is greater than the height of the unit on which the chip is mounted; the column 201 is capable of pressing the substrate.
基板30由有效区域和非有效区域组成。基板30有效区域有可贴装芯片的相同单颗原件组成的矩阵单元;基板30单颗原件有设计规划贴装芯片及/或电容等元器件的二维位置规划;非有效区域由四边用于传递夹取的边框。The substrate 30 is composed of an effective area and an ineffective area. The effective area of the substrate 30 has a matrix unit composed of the same single component to which the chip can be mounted; the single original of the substrate 30 has a two-dimensional position plan for designing components such as a chip and/or a capacitor; the non-effective area is used by four sides. Pass the clipped border.
封装作业开始后,基板30在水平轨道上步进到达键合区域,底板10升起到预设高度,与基板30的背面接触,给基板30提供一压焊支撑平台。热压板20下降,到达预设高度,与基板30的正面接触。在热压板20下降过程中,当基板30有翘曲时,压柱201将最先与基板30的正面接触,随着热压板20的下降,压柱201将基板翘曲部分下压至水平。再将底板10开启真空吸附动作,牢固吸附基板30的背面;之后,底板10与热压板20一起动作,将基板30完全压合,完成压焊,底板 10和热压板20退开。将基板30在水平轨道上再次步进,底板10和热压板20再次完成上述动作,直至压焊封装完成,设备停机。After the packaging operation starts, the substrate 30 is stepped on the horizontal track to reach the bonding area, and the bottom plate 10 is raised to a preset height to contact the back surface of the substrate 30 to provide a pressure welding support platform to the substrate 30. The hot platen 20 is lowered to reach a preset height and is in contact with the front surface of the substrate 30. During the lowering of the hot platen 20, when the substrate 30 is warped, the press column 201 will first contact the front surface of the substrate 30. As the hot platen 20 is lowered, the press column 201 presses the warped portion of the substrate down to Level. Then, the bottom plate 10 is opened to the vacuum suction operation to firmly adsorb the back surface of the substrate 30. Thereafter, the bottom plate 10 is moved together with the hot platen 20, the substrate 30 is completely pressed, and the pressure welding is completed, and the bottom plate 10 and the hot plate 20 are retracted. The substrate 30 is again stepped on the horizontal track, and the bottom plate 10 and the hot plate 20 are again subjected to the above actions until the pressure welding package is completed and the device is stopped.
在压焊作业进行过程中,为了能够使热压板20对基板30的压紧效果更好,在热压板20平行于基板30步进方向的两端分别设置压筋202,压筋202的凸出方向与压柱201的凸出方向相同,顶面与基板30平行。压筋202的高度不小于压柱201的高度。压筋202与基板10的两端相配合,能够压紧基板10。压柱201与压筋202配合作业能够使热压板20对基板30的压紧效果更好,使基板30翘曲的概率大大降低。In the process of the pressure welding operation, in order to make the pressing effect of the hot platen 20 on the substrate 30 better, the embossing 202 is respectively disposed at two ends of the hot platen 20 parallel to the step direction of the substrate 30, and the rib 202 is respectively The protruding direction is the same as the protruding direction of the pressing column 201, and the top surface is parallel to the substrate 30. The height of the rib 202 is not less than the height of the column 201. The ribs 202 are fitted to both ends of the substrate 10 to press the substrate 10. The work of the pressing column 201 and the pressing rib 202 can make the pressing effect of the hot pressing plate 20 on the substrate 30 better, and the probability of warping the substrate 30 is greatly reduced.
本发明中的压柱201为圆柱形,顶端与基板30的表面平行。压柱201和压筋202采用金属材质,不易变形,且表面光洁度高,压紧基板30后,对基板30的影响小。一般情形下,压柱201的直径不大于基板上贴装芯片的颗件单元与单元元件之间的最小距离、基板在轨道内可滑动预留间距的一半和矩阵单元外框到矩阵单元芯片内部的距离三者之和。例如,贴装芯片的单元与单元之间的最小距离为250μm,基板在轨道内可滑动预留间距为100μm,矩阵单元外框到矩阵单元芯片内部的距离为75μm,则压柱201的最大直径就为350μm。The press column 201 in the present invention has a cylindrical shape, and the tip end is parallel to the surface of the substrate 30. The pressing column 201 and the pressing rib 202 are made of a metal material, are not easily deformed, and have a high surface finish. After the substrate 30 is pressed, the influence on the substrate 30 is small. In general, the diameter of the pressing column 201 is not more than the minimum distance between the pixel unit and the unit element on which the chip is mounted on the substrate, the half of the substrate is slidably reserved within the track, and the matrix unit is framed to the inside of the matrix unit chip. The distance between the three. For example, the minimum distance between the unit and the unit on which the chip is mounted is 250 μm, the substrate has a slidable reserved pitch of 100 μm in the track, and the distance from the outer frame of the matrix unit to the inside of the matrix unit chip is 75 μm, and the maximum diameter of the column 201 is It is 350μm.
为了能够使压柱201对基板30的压紧效果更好,通常情况下,将压柱201对应布置在贴装芯片的单元与单元之间空隙的中间位置。In order to make the pressing effect of the pressing column 201 on the substrate 30 better, in general, the pressing column 201 is correspondingly disposed at an intermediate position between the cells between the unit and the unit on which the chip is mounted.
利用本发明的封装焊线加热组合单元进行封装作业时,首先,将设备开机,基板30在水平轨道上步进到达键合区域。再将底板10升起到预设高度,与基板30背面接触;将热压板20下降到预设高度,与基板30正面接触。在此过程中,当基板30有翘曲时,压柱201将最先与基板30的正面接触,随着热压板20的下降,将基板30翘曲部分下压至水平。之后,将底板10开启真空吸附动作,牢固吸附基板30的背面。底板10与热压板20一起动作,将基板30完全压合,完成一次压焊作业。然后,退开底板10和热压板20,基板30在水平轨道上再次步进,底板10和热压板20再次分别动作至预设高度,底板10和热压板20一起将基板30完全压合,完成压焊;如此反复,直至压焊封装完成,设备停机。即利用上述封装焊线加热组合单元进行封装的方法为:When the package operation is performed by the package bonding wire heating combination unit of the present invention, first, the device is turned on, and the substrate 30 is stepped on the horizontal track to reach the bonding area. Then, the bottom plate 10 is raised to a preset height to be in contact with the back surface of the substrate 30; the hot platen 20 is lowered to a preset height to be in contact with the front surface of the substrate 30. In this process, when the substrate 30 is warped, the press column 201 will first come into contact with the front surface of the substrate 30, and as the hot press plate 20 is lowered, the warped portion of the substrate 30 is pressed down to the level. Thereafter, the bottom plate 10 is opened to the vacuum suction operation to firmly adsorb the back surface of the substrate 30. The bottom plate 10 operates together with the hot platen 20 to completely press the substrate 30 to complete the primary pressure welding operation. Then, the bottom plate 10 and the hot plate 20 are retracted, the substrate 30 is stepped again on the horizontal track, and the bottom plate 10 and the hot plate 20 are again moved to a preset height, and the bottom plate 10 and the hot plate 20 together press the substrate 30 completely. Finish, complete the pressure welding; so repeated until the pressure welding package is completed, the equipment is shut down. That is, the method of packaging by using the above packaged wire heating combination unit is:
步骤S1、设备开机,将基板30在水平轨道上步进到达键合区域;Step S1, the device is powered on, and the substrate 30 is stepped on the horizontal track to reach the bonding area;
步骤S2、将底板10升起到预设高度,与基板30背面接触;Step S2, raising the bottom plate 10 to a preset height, and contacting the back surface of the substrate 30;
步骤S3、将热压板20下降到预设高度,与基板30正面接触;在此过程中,当基板30有翘曲时,压柱201将最先与基板30的正面接触,随着热压板20的下降,将基板30翘曲部分下压至水平;Step S3, the hot platen 20 is lowered to a preset height to be in contact with the front surface of the substrate 30. In the process, when the substrate 30 is warped, the press column 201 will first contact the front surface of the substrate 30, with hot pressing The lowering of the plate 20 lowers the warped portion of the substrate 30 to a level;
步骤S4、将底板10开启真空吸附动作,牢固吸附基板30的背面;Step S4, the bottom plate 10 is opened to vacuum suction operation, and the back surface of the substrate 30 is firmly adsorbed;
步骤S5、底板10与热压板20一起动作,将基板30完全压合,完成压焊;Step S5, the bottom plate 10 and the hot platen 20 act together, and the substrate 30 is completely pressed to complete the pressure welding;
步骤S6、退开底板10和热压板20,基板30在水平轨道上步进,底板10和热压板30再次分别动作至预设高度,底板10和热压板20一起将基板30完全压合,完成压焊;如此反复,直至压焊封装完成,设备停机。Step S6, the bottom plate 10 and the hot plate 20 are retracted, the substrate 30 is stepped on the horizontal track, and the bottom plate 10 and the hot plate 30 are respectively moved to a preset height, and the bottom plate 10 and the hot plate 20 together press the substrate 30 completely. Finish, complete the pressure welding; so repeated until the pressure welding package is completed, the equipment is shut down.
最后应说明的是:显然,上述实施例仅仅是为清楚地说明本发明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引申出的显而易见的变化或变动仍处于本发明的保护范围之中。It should be noted that the above-described embodiments are merely illustrative of the invention and are not intended to limit the embodiments. Other variations or modifications of the various forms may be made by those skilled in the art in light of the above description. There is no need and no way to exhaust all of the implementations. Obvious changes or variations resulting therefrom are still within the scope of the invention.