JP4838098B2 - Substrate transfer apparatus and substrate transfer method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide substrate transfer equipment capable of holding a substrate while maintaining sufficient flatness when the substrate is vacuum-held on a substrate holing stage. <P>SOLUTION: A substrate absorption unit 3 and the substrate holding stage 4 are motion-controlled by a control unit 5 as follows. After the substrate K is transferred onto the substrate holding stage 4, the substrate absorption unit 3 releases the vacuum-holding of the substrate K. After the vacuum-holding is released, the substrate absorption unit 3 first presses the substrate K for just first one hour in a row. Then, when two hours elapses after the pressing force is released, the substrate K is intermittently pressed at intervals of three hours. Next, the substrate K is vacuum-held on the substrate holding stage 4. The foregoing pressing operations eliminate a temperature difference between the upper surface and lower surface of the substrate K, thus making it possible to remove stress that could lead to the upward warpage of the substrate. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

  The present invention relates to a substrate transfer apparatus and a substrate transfer method. In particular, the present invention relates to a substrate transfer apparatus and a substrate transfer method applied to a chip mounting apparatus for mounting a chip (electronic component) on a substrate.

  In the chip mounting apparatus, the chip is mounted on the substrate through the following steps. That is, a substrate transfer process for transferring a substrate on which a chip is to be mounted onto a substrate holding stage, a chip bonding process for mounting a chip on the substrate transferred to and held on the substrate holding stage, and the like. In the substrate transfer process, a substrate transfer device is used (see, for example, Patent Document 1).

  FIG. 8 is a schematic configuration diagram illustrating an example of a conventional substrate transfer apparatus. As shown in FIG. 8, the conventional substrate transfer apparatus 10 includes a substrate stocker 20, a substrate suction plate 30, a substrate holding stage 40, and a control unit 50.

  The substrate suction plate 30 is configured to be able to hold and heat the upper surface of the substrate K by vacuum suction. Further, the substrate suction plate 30 is configured to be driven in the horizontal and vertical directions so that the substrate K held by vacuum suction is transferred onto the substrate holding stage 40. The substrate holding stage 40 is configured to be capable of vacuum suction holding and heating the lower surface of the substrate K transferred by the substrate suction plate 30. The control unit 50 is configured to control the operation of the substrate suction plate 30 and the substrate holding stage 40 by a computer program incorporated in advance.

  The operation of the conventional substrate transfer apparatus 10 will be described. The substrate suction plate 30 is heated to the first temperature. The substrate holding stage 40 is heated to the second temperature. First, the substrate suction plate 30 is lowered to hold the upper surface of the substrate K by vacuum suction. In this state, the substrate suction plate 30 rises, then moves horizontally so as to be directly above the substrate holding stage 40, and then descends. When the substrate K reaches the substrate holding stage 40, the vacuum suction holding by the substrate suction plate 30 is released. Thereafter, the substrate suction plate 30 is retracted. The substrate holding stage 40 holds the substrate K by vacuum suction.

  As described above, chip bonding is performed on the substrate K held by vacuum suction on the substrate holding stage 40. The chip bonding is performed in the order of taking out the chip by the vacuum suction head, positioning the chip and the substrate K, and mounting the chip on the substrate K by the vacuum suction head.

  In the substrate transfer apparatus 10, the back side surface of the substrate K is heated to the second temperature by setting the substrate holding stage 40 to the second temperature. This is due to the following reason. That is, a thermosetting adhesive is transferred in advance to the back surface of the chip, and this adhesive is cured when the chip is mounted on the substrate. Moreover, the back side surface of the substrate K is heated to the first temperature by setting the substrate suction plate 30 to the first temperature. This is preheating heating for reducing a temperature difference from the second temperature at which the substrate K is heated by the substrate holding stage 40. The first temperature is, for example, 80 ° C., and the second temperature is, for example, 130 ° C.

Japanese Patent Application No. 2005-160071

  However, in the conventional substrate transfer apparatus 10 described above, when the substrate suction plate 30 places the substrate K on the substrate holding stage 40, the substrate K warps upward due to the temperature difference between the lower side surface and the upper side surface of the substrate K. A return phenomenon may occur. As a result, when the substrate K is vacuum-sucked and held by the substrate holding stage 40, sufficient flatness may not be ensured and may be held in a distorted state. In this case, the quality of the final mounting board is adversely affected.

  2. Description of the Related Art In recent years, a mounting technique has been adopted that realizes downsizing, thinning, and weight reduction of a mounting board by embedding and embedding components such as an LSI (Large Scale Integrated circuit) in the board. In this technique, a thin substrate having a thickness of about 40 μm to 100 μm is handled. When such a large-area and thin substrate K is vacuum-sucked and held by the substrate holding stage, securing a sufficient flatness is an important issue in improving the quality of the mounting substrate. .

  The present invention has been made in view of the above-described problems, and provides a substrate transfer apparatus and method capable of ensuring and holding sufficient flatness when holding a substrate by vacuum suction using a substrate holding stage. For the purpose.

  In order to solve the above-described problem, a substrate transfer apparatus according to the present invention is a substrate transfer apparatus (1) in a chip mounting apparatus, in which an upper surface of a substrate (K) on which a chip is to be mounted is held by vacuum suction and A substrate suction portion (3) configured to heat and configured to be driven in the horizontal and vertical directions, and a substrate holding stage (4) configured to vacuum-suck and hold and heat the lower surface of the substrate (K). ) First, the upper surface of the substrate (K) is vacuum-sucked and held by the substrate suction portion (3) heated to the first temperature, and then this substrate (4) is placed on the substrate holding stage (4) heated to the second temperature. K) is transferred, the vacuum suction holding by the substrate suction portion (3) is released, and then the substrate (K) is pressed by the substrate suction portion (3) for a continuous first time (T1). Substrate adsorbing portion after the second time (T2) has elapsed after the pressure is released 3), the substrate suction portion (3) is configured so that the substrate (K) is intermittently pressed at intervals of the third time (T3), and then the substrate (K) is vacuum-sucked and held on the substrate holding stage (4). ) And a substrate holding stage (4), and a control unit (5) for controlling the operation.

  Further, the substrate transfer method according to the present invention is configured to hold and heat the upper surface of the substrate (K) on which the chip is to be mounted and is configured to be driven in the horizontal and vertical directions. Part (3), a substrate holding stage (4) configured to vacuum hold and heat the lower surface of the substrate (K) transferred by the substrate suction part (3), a substrate suction part (3), A substrate transfer method in a substrate transfer device (1) comprising a control unit (5) for controlling a substrate holding stage (4), wherein the substrate is first moved by a substrate adsorption unit (3) heated to a first temperature. The upper surface of (K) is held by vacuum suction, and then the substrate (K) is transferred onto the substrate holding stage (4) heated to the second temperature to release the vacuum suction holding by the substrate suction portion (3). Subsequently, the first time (T ) And then the substrate (K) is released at intervals of the third time (T3) by the substrate suction part (3) after the second time (T2) has elapsed. The controller (5) controls the operation of the substrate suction part (3) and the substrate holding stage (4) so that the substrate (K) is vacuum-sucked and held on the substrate holding stage (4). It is characterized by.

  The function and effect of the present invention will be described. The upper surface of the substrate (K) is held by vacuum suction by the substrate suction portion (3), and the substrate (K) is transferred onto the substrate holding stage (4). The upper surface of the substrate (K) is heated to the first temperature during vacuum suction holding by the substrate suction section (3). The lower surface of the substrate (K) is heated to the second temperature when placed on the substrate holding stage (4). The operation of the substrate suction section (3) and the substrate holding stage (4) is controlled as follows by the control section (5). That is, the substrate suction unit (3) releases the vacuum suction holding of the substrate (K) after placing the substrate (K) on the substrate holding stage (4). After releasing the vacuum suction holding, the substrate suction section (3) first presses the substrate (K) for a continuous first time (T1). Subsequently, the pressure is released, and the substrate (K) is intermittently pressed at intervals of the third time (T3) after the second time (T2) has elapsed. Subsequently, the substrate (K) is held by vacuum suction on the substrate holding stage (4). By performing the pressing operation described above, there is no temperature difference between the upper surface and the lower surface of the substrate K, and it is possible to remove the stress that tends to warp upward. That is, no stress is accumulated. As a result, the substrate (K) is vacuum-sucked and held on the substrate holding stage (4) while ensuring sufficient flatness. In addition, it is preferable that the first temperature is lower than the second temperature in order to protect the substrate (K) from damage due to heat.

  In addition, the code | symbol of the parentheses attached | subjected to each component in each column of the means for solving a claim and a subject shows the correspondence with the specific means as described in embodiment mentioned later.

  According to the present invention, when the substrate is held by vacuum suction on the substrate holding stage, sufficient flatness can be secured and held.

  FIG. 1 is a schematic configuration diagram of a substrate transfer apparatus according to the present invention, FIG. 2 is a plan view of a substrate suction plate, and FIG. 3 is a plan view of a substrate holding stage. In each figure, the three axes of the orthogonal coordinate system are X, Y, and Z, the XY plane is the horizontal plane, and the Z direction is the vertical direction.

  The substrate transfer apparatus 1 is incorporated in a chip mounting apparatus and includes a substrate stocker 2, a substrate suction plate 3, a substrate holding stage 4, and a control unit 5, as shown in FIG.

  The substrate stocker 2 is a part for temporarily placing a substrate K to be mounted on a chip. The target substrate K is a large-area and thin substrate having a vertical and horizontal size of 560 mm × 610 mm and a thickness of about 40 μm to 100 μm.

  The substrate suction plate 3 is made of a plate body having a mounting surface having a larger area than the substrate K to be mounted on the chip, and includes a vacuum suction holding means 3A for holding the upper surface of the substrate K by vacuum suction, and a vacuum suction holding means. And heating means 3B for heating the substrate K held by vacuum suction at 3A. The vacuum suction holding means 3 </ b> A includes a plurality of suction holes 31 for vacuum suction holding the upper surface of the substrate K, and a vacuum pump 33 connected to the suction holes 31 through an open / close valve 32. The heating means 3B includes a heater 34 (see FIG. 2) embedded in parallel with a predetermined interval from each other, and a power source 36 electrically connected to the heater 34 via a switch 35. The substrate suction plate 3 is mechanically connected to a driving device 38 having an actuator 37 that can be driven in the horizontal and vertical directions.

  The substrate holding stage 4 is made of a plate body having a size larger than the substrate K to be mounted on the chip, and includes a vacuum suction holding means 4A for holding the lower surface of the substrate K transferred by the substrate suction plate 3 by vacuum suction, and a vacuum. And heating means 4B for heating the substrate K vacuum-sucked and held by the suction-holding means 4A. The vacuum suction holding means 4A includes a frame-like suction groove 41 (41a, 41b, 41c) for holding the lower surface of the substrate K by vacuum suction, and a vacuum pump connected to the suction groove 41 via an opening / closing valve 42. 43. The heating means 4B includes a heater 44 (see FIG. 3) built in parallel at a predetermined interval from each other, and a power source 46 electrically connected to the heater 44 via a switch 45.

  The control unit 5 includes an input / output device such as a touch panel, appropriate hardware mainly including a memory chip and a microprocessor, a hard disk device incorporating a computer program for operating the hardware, and data communication with each component. It is configured from an appropriate interface circuit that performs the above-described operations, and enables operation control of each component in the substrate transfer apparatus 1 so that the substrate transfer apparatus 1 performs a predetermined transfer operation.

  Next, the operation of the substrate transfer apparatus 1 according to the present invention will be described with reference to FIGS. 4, 5 and 6 are diagrams for explaining the operation of the substrate transfer apparatus according to the present invention in time series, and FIG. 7 is a timing chart for explaining the operation of the substrate transfer apparatus according to the present invention. . Note that the times t1 to t12 in FIG. 7 are associated with the times t1 to t12 in FIGS.

  The substrate suction plate 3 is heated to the first temperature by the heater 34. The substrate holding stage 4 is heated to the second temperature by the heater 44. The first temperature is 80 ° C., and the second temperature is 130 ° C. The reason for heating in this way is as follows. That is, the heating of the substrate holding stage 4 to the second temperature is to cure the thermosetting pressure-sensitive adhesive previously transferred to the back surface of the chip when the chip is mounted on the substrate K. The heating of the substrate suction plate 3 to the first temperature is preheating heating for reducing the temperature difference from the second temperature at which the substrate K is heated by the substrate holding stage 4.

  First, as shown in FIG. 4A, the driving device 38 drives the substrate suction plate 3 disposed at the upper position downward in the Z direction. As a result, the substrate suction plate 3 comes into contact with the upper surface of the substrate K. At this time, the opening / closing valve 32 is opened, and the substrate K is vacuum-sucked and held by the vacuum pressure generated in the plurality of suction holes 31 (FIG. 4B). In this state, the driving device 38 drives the substrate suction plate 3 upward in the Z direction (FIG. 4C). Subsequently, the driving device 38 drives the substrate suction plate 3 in the X direction. Accordingly, the substrate suction plate 3 comes directly above the substrate holding stage 4 (FIG. 4D).

  Subsequently, the driving device 38 drives the substrate suction plate 3 downward in the Z direction (FIG. 5E). When the substrate K reaches the placement surface of the substrate holding stage 4, the driving is stopped, the open / close valve 32 is closed, and the vacuum suction holding of the substrate K is released. Subsequently, the driving device 38 drives the substrate suction plate 3 downward in the Z direction to press the substrate K for the first time T1 (FIG. 5F). The first time T1 is preferably 8 seconds to 12 seconds, and is 10 seconds in this example. Subsequently, the driving device 38 drives the substrate suction plate 3 upward in the Z direction to release the pressing of the substrate K only for the second time T2 (FIG. 5G). The second time T2 is preferably 0.5 second to 2 seconds, and is set to 1 second in this example. Subsequently, the driving device 38 drives the substrate suction plate 3 downward in the Z direction to press the substrate K for the third time T3 (FIG. 5 (H)). The predetermined time T3 is preferably 0.5 second to 2 seconds, and is 1 second in this example.

Subsequently, the driving device 38 drives the substrate suction plate 3 upward in the Z direction to release the pressing of the substrate K for the second time T2 (FIG. 6 (I)). Subsequently, the driving device 38 drives the substrate suction plate 3 downward in the Z direction to press the substrate K for the third time T3. After this pressing, the opening / closing valve 42 is opened, and the substrate K is vacuum-sucked and held on the mounting surface of the substrate holding stage 4 by the vacuum pressure generated in the suction groove 41 (FIG. 6J). Subsequently, the driving device 38 drives the substrate suction plate 3 upward in the Z direction (FIG. 6K). Subsequently, the driving device 38 drives the substrate suction plate 3 in the −X direction. As a result, the substrate suction plate 3 is retracted from directly above the substrate holding stage 4 (FIG. 6L). The pressure during the pressing described above is preferably and the predetermined size selected from the range of ^{3gf / cm 2 ~15gf / cm 2} .

  As described above, chip bonding is performed on the substrate held by vacuum suction on the substrate holding stage 4. Chip bonding is performed in the order of taking out a chip by a vacuum suction head, positioning the chip and the substrate, and mounting the chip on the substrate by a vacuum suction head.

  In the chip transfer device 1 described above, the upper surface of the substrate K is vacuum-sucked and held by the substrate suction plate 3, and the substrate K is transferred onto the substrate holding stage 4. The upper surface of the substrate K is heated to the first temperature during vacuum suction holding by the substrate suction plate 3. The lower surface of the substrate K is heated to the second temperature when placed on the substrate holding stage 4. The operation of the substrate suction plate 3 and the substrate holding stage 4 is controlled by the control unit 5 as follows. That is, the substrate suction plate 3 releases the vacuum suction holding of the substrate K after placing the substrate K on the substrate holding stage 4. After releasing the vacuum suction holding, the substrate suction plate 3 first presses the substrate K for a continuous first time T1. Subsequently, the pressure is released, and the substrate K is intermittently pressed at intervals of the third time T3 after the second time T2 has elapsed. Subsequently, the substrate K is held by vacuum suction on the substrate holding stage 4. By performing the pressing operation described above, there is no temperature difference between the upper surface and the lower surface of the substrate K, and it is possible to remove the stress that tends to warp upward. That is, no stress is accumulated. As a result, the substrate K is vacuum-sucked and held on the substrate holding stage 4 with sufficient flatness.

  As mentioned above, although embodiment of this invention was described, embodiment disclosed above is an illustration to the last, Comprising: The scope of the present invention is not limited to this embodiment. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

1 is a schematic configuration diagram of a substrate transfer apparatus according to the present invention. It is a top view of a board | substrate adsorption | suction board. It is a top view of a substrate holding stage. It is a figure for demonstrating operation | movement of the board | substrate transfer apparatus which concerns on this invention in time series. It is a figure for demonstrating operation | movement of the board | substrate transfer apparatus which concerns on this invention in time series. It is a figure for demonstrating operation | movement of the board | substrate transfer apparatus which concerns on this invention in time series. It is a timing chart for demonstrating operation | movement of the board | substrate transfer apparatus which concerns on this invention. It is the structure schematic of the conventional board | substrate transfer apparatus.

Explanation of symbols

1 Substrate Transfer Device 3 Substrate Suction Plate (Substrate Suction Unit)
4 Substrate holding stage 5 Control unit K Substrate T1 1st time T2 2nd time T3 3rd time

Claims (4)

A substrate transfer device (1) in a chip mounting device,
A substrate suction portion (3) configured to hold and heat the upper surface of the substrate (K) on which the chip is mounted and configured to be driven in the horizontal and vertical directions;
A substrate holding stage (4) configured to vacuum hold and heat the lower surface of the substrate (K);
First, the upper surface of the substrate (K) is vacuum-sucked and held by the substrate suction portion (3) heated to the first temperature, and then the substrate (K) is placed on the substrate holding stage (4) heated to the second temperature. Transfer and release the vacuum suction holding by the substrate suction section (3), then press the substrate (K) for the first continuous time (T1) by the substrate suction section (3), and then release this press Then, after the second time (T2) has elapsed, the substrate suction section (3) intermittently presses the substrate (K) at intervals of the third time (T3), and then the substrate (K) is placed on the substrate holding stage (4). And a controller (5) for controlling the operation of the substrate holding part (3) and the substrate holding stage (4) so as to hold the substrate by vacuum suction.   The substrate transfer apparatus according to claim 1, wherein the first temperature is lower than the second temperature. A substrate suction portion (3) configured to hold and heat the upper surface of the substrate (K) to be mounted on the chip and to be driven in the horizontal and vertical directions, and a substrate suction portion (3) The substrate holding stage (4) configured to hold and heat the lower surface of the substrate (K) transferred by the vacuum suction, and a control unit for controlling the substrate suction unit (3) and the substrate holding stage (4) (5) a substrate transfer method in a substrate transfer apparatus (1),
First, the upper surface of the substrate (K) is vacuum-sucked and held by the substrate suction portion (3) heated to the first temperature, and then the substrate (K) is placed on the substrate holding stage (4) heated to the second temperature. Transfer and release the vacuum suction holding by the substrate suction section (3), then press the substrate (K) for the first continuous time (T1) by the substrate suction section (3), and then release this press Then, after the second time (T2) has elapsed, the substrate suction section (3) intermittently presses the substrate (K) at intervals of the third time (T3), and then the substrate (K) is placed on the substrate holding stage (4). ) Is controlled by the control unit (5) so that the substrate adsorption unit (3) and the substrate holding stage (4) are controlled by vacuum adsorption.   The substrate transfer method according to claim 3, wherein the first temperature is lower than the second temperature.

Images