WO2019090845A1 - 显示装置、显示面板及其制作方法 - Google Patents

显示装置、显示面板及其制作方法 Download PDF

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WO2019090845A1
WO2019090845A1 PCT/CN2017/112622 CN2017112622W WO2019090845A1 WO 2019090845 A1 WO2019090845 A1 WO 2019090845A1 CN 2017112622 W CN2017112622 W CN 2017112622W WO 2019090845 A1 WO2019090845 A1 WO 2019090845A1
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layer
metal organic
barrier layer
barrier
metal
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French (fr)
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沐俊应
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

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  • the present invention relates to the field of display technologies, and in particular, to a display device, a display panel, and a method of fabricating the same.
  • OLED display technology Compared with the current mainstream liquid crystal display technology, OLED display technology has the outstanding advantages of high contrast, wide color gamut, flexibility, thinness and energy saving. In recent years, OLED display technology has gradually spread in the fields of mobile devices such as smart phones and tablet computers, flexible wearable devices such as smart watches, large-scale curved TVs, and white light illumination, and the development momentum is strong.
  • OLED devices have bright prospects in the display field due to their many advantages.
  • active metals used to form metal cathodes in OLED devices are very sensitive to moisture and oxygen in the air, and are very susceptible to reaction with infiltrated water vapor, affecting charge injection.
  • the infiltrated water vapor and oxygen also react with organic materials, which are the main factors that cause the performance of OLED devices to decrease and the lifetime of OLED devices to shorten. Therefore, packaging technology is very important for OLED devices.
  • OLED devices are available in a variety of packaging methods, such as Thin Film Encapsulation (TFE), Glass (Glass) packaging, and Frit packaging.
  • the most commonly used is a thin film packaging method, that is, a transparent film is deposited by a technique such as CVD or ALD to encapsulate the OLED device, and the packaging method has a simple process and can maintain the light and thin structural characteristics of the package object.
  • ALD Atomic Layer Deposition
  • the reactants are sequentially injected from one side of the substrate, uniformly flow through the surface of the substrate, and each reactant is isolated by nitrogen gas. All gases are vented from the other side of the substrate.
  • a Cycle deposits a thin layer of stable thickness and sets the number of Cycles according to the required thickness.
  • the reactants are sequentially ejected from the respective nozzles, passed through the surface of the substrate and withdrawn from the exhaust port, and each cycle includes and isolates the next cycle of nitrogen pulse.
  • the substrate or the nozzle is uniformly moved to the left and right, and the reactants are sequentially flowed from the surface of the substrate to form a Cycle, and a thin layer having a stable thickness is deposited, and the number of Cycles is set according to the required thickness.
  • the most common thin film package adopts an alternating manner of inorganic metal layer/organic buffer layer/inorganic metal layer, inorganic material is used for blocking water oxygen, and organic material is used for effectively covering particles and buffering stress during bending and folding.
  • a film of alumina (Al 2 O 3 ), zirconium oxide (ZrO 2 ) is prepared by atomic layer deposition (ALD). Its reaction formula is:
  • Metal precursor + organic group precursor metal organic (buffer layer)
  • Metal precursor + oxidation precursor metal oxide (barrier layer)
  • this mode has the following disadvantages: due to the limited ability of the organic layer to eliminate the TFE stress, the TFE is easily damaged, and the preparation process of the subsequent layers of the package film needs to be isolated, and the production efficiency is low.
  • the technical problem to be solved by the present invention is to provide a display device, a display panel and a manufacturing method thereof, which can improve the ability of the packaging film to resist stress and improve production efficiency.
  • the present invention adopts a technical solution to provide a display panel based on an organic light emitting diode (OLED), the display panel includes a device layer, and further includes a first barrier layer sequentially stacked on the device layer. a buffer layer and a second barrier layer, the buffer layer comprising at least two different metalorganic or a mixture of the at least two different metalorganics, wherein the at least two different metalorganes do not react with each other .
  • OLED organic light emitting diode
  • the second technical solution adopted by the present invention is to provide a display device based on an organic light emitting diode (OLED), the display device includes a display panel, the display panel includes a device layer, and further includes sequentially stacking a first barrier layer, a buffer layer, and a second barrier layer on the device layer, the buffer layer comprising at least two different metalorganic compounds or a mixture of the at least two different metalorganics, wherein the at least Two different metalorganic materials do not react with each other.
  • OLED organic light emitting diode
  • the third technical solution adopted by the present invention is to provide a method for fabricating an organic light emitting diode OLED, the manufacturing method comprising: preparing a device layer; forming a first barrier layer in the device layer in turn; a buffer layer and a second barrier layer; wherein the buffer layer comprises at least two different metal organics or a mixture of the at least two different metal organics, and the at least two different metalorganic materials are not between each other reaction.
  • the invention has the beneficial effects that the encapsulating film of the invention comprises at least two different metal organics or a mixture of at least two different metal organics, which can improve the adhesion between adjacent layers of the encapsulating film, compared with the prior art.
  • the adjacent layers of the packaging film are prevented from peeling from each other; the ability to resist the TFE stress is improved, the package film is prevented from being broken, and a plurality of reactants are simultaneously reacted to improve the production efficiency.
  • FIG. 1 is a schematic structural view of a first embodiment of a display panel of the present invention
  • FIG. 2 is a schematic structural view of a second embodiment of the display panel of the present invention.
  • FIG. 3 is a schematic flow chart of an embodiment of a method for fabricating a display panel of the present invention.
  • the present invention provides a display panel based on an organic light emitting diode (OLED), the display panel includes a device layer, and further includes a first barrier layer, a buffer layer, and a second barrier layer, which are sequentially stacked on the device layer, the buffer layer A mixture comprising at least two different metalorganes or the at least two different metalorganes, wherein the at least two different metalorganes do not react with each other.
  • OLED organic light emitting diode
  • FIG. 1 is a schematic structural view of a first embodiment of the display panel of the present invention.
  • the display panel in the present embodiment includes a device layer 10, and further includes a first barrier layer 11, a buffer layer 12, and a second barrier layer 13 which are sequentially stacked on the device layer 10.
  • the metal oxide of the first barrier layer 10 and the second barrier layer 13 may be Al 2 O 3 , TiO 2 , ZrO 2 or the like.
  • the buffer layer 12 includes a first metal organic substance and a second metal organic substance, and the two different metal organic substances do not react with each other. In other embodiments, the buffer layer 12 may also include three or more different metal organic substances, which are not limited in the present invention.
  • the buffer layer 12 includes a first metal organic layer 121 and a second metal organic layer 126 , and the first metal organic layer 121 is in contact with the first barrier layer 11 ,
  • the first metal organic layer 121 includes the same first metal element as the first barrier layer 11;
  • the second metal organic layer 126 is in contact with the second barrier layer 13, and
  • the second metal organic layer 126 includes the same layer as the second barrier layer 13. Two metal elements.
  • the first metal organic layer 121 and the second metal organic layer 126 further include a second metal organic layer 122, a first metal organic layer 123, a second metal organic layer 124, and a first metal organic layer 125 which are sequentially stacked.
  • the first metal organic layer 121, the first metal organic layer 123, and the first metal organic layer 125 are made of the same material, and the thickness gradually decreases from the first barrier layer 11 to the second barrier layer 13; the second metal organic layer 122
  • the second metal organic layer 124 and the second metal organic layer 126 have the same material, and the thickness gradually increases from the first barrier layer 11 to the second barrier layer 13.
  • a Cycle deposit cycle
  • the number of Cycles is set according to the required thickness
  • the number of Cycles of the first metal organic layer 121 is set to 30, and second.
  • the number of Cycles of the metal organic layer 122 is set to 10
  • the number of Cycles of the first metal organic layer 123 is set to 20
  • the number of Cycles of the second metal organic layer 124 is set to 20
  • the number of Cycles of the first metal organic layer 125 is set to 10.
  • the number of Cycles of the second metal organic layer 126 is set to 30.
  • first metal organic layer and the second metal organic layer are alternately distributed between the barrier layers, and each of the adjacent first metal organic layer and the second metal organic layer has the same total thickness. In other embodiments, the total thickness of each of the adjacent first metal organic layer and the second metal organic layer may also be different.
  • the number of the barrier layers may also be three or more, and the barrier layer may further include two, three, four, five or more buffer layer portions, and the number of the phases is set according to actual conditions. The situation is determined, and the present invention does not limit this.
  • the above display panel can be used in various types of display devices.
  • the encapsulating film of the present embodiment includes at least two different metal organic compounds or a mixture of at least two different metal organic materials, which can improve the adhesion between adjacent layers of the encapsulating film and prevent the adjacent layers of the encapsulating film from peeling off from each other. Improve the ability to resist TFE stress and prevent the package film from rupturing.
  • the present invention can also simultaneously react a plurality of reactants to improve production efficiency.
  • FIG. 2 is a schematic structural view of a second embodiment of the display panel of the present invention.
  • the display panel includes a device layer 20, and further includes a first barrier layer 21, a buffer layer 22, and a second barrier layer 23 which are sequentially stacked on the device layer 20.
  • the metal oxide of the first barrier layer 21 and the second barrier layer 23 may be Al 2 O 3 , TiO 2 , ZrO 2 or the like.
  • Buffer layer 22 comprises a mixture of two different metalorganic species that do not react with each other.
  • the buffer layer 12 may also include three or more different metal organic substances, which are not limited in the present invention.
  • the portion of the buffer layer 22 that is in contact with the first barrier layer 21 is the same as the metal element of the first barrier layer 21, and the portion of the buffer layer 22 that is in contact with the second barrier layer 23 is the same as the metal element of the second barrier layer 23. Since the interface between the organic substance and the oxide of the same metal is better and the adhesion is stronger, in the embodiment, the metal elements in the adjacent layers of the package film are the same, and the adjacent layer of the package film can be effectively prevented from being partially peeled off.
  • the buffer layer 22 includes a first metal organic layer 221 and a second metal organic layer 224.
  • the first metal organic layer 221 is in contact with the first barrier layer 21, and the first metal organic substance
  • the layer 221 includes the same first metal element as the first barrier layer 21;
  • the second metal organic layer 224 is in contact with the second barrier layer 23, and
  • the second metal organic layer 224 includes the same second metal element as the second barrier layer 23.
  • the first metal organic layer 221 and the second metal organic layer 224 further include a first metal organic mixed layer 222 and a second metal organic mixed layer 223 which are sequentially stacked.
  • the material of the first metal organic layer 221 is the first metal organic substance
  • the material of the second metal organic material layer 224 is the second metal organic substance
  • the first metal organic mixed layer 222 and the second metal organic mixed layer 223 are the first metal organic substance and the first a mixture of two metal organics, but the ratio of the two metal organics in the first metal organic mixed layer 222 and the second metal organic mixed layer 223 is different from the first metal organic layer 221 to the second metal organic layer 224
  • the proportion of the first metal organic matter gradually decreases
  • the proportion of the second metal organic matter gradually increases.
  • the proportion of the first metal organic substance is 60%, and the proportion of the second metal organic substance is 40%; and in the second metal organic mixed layer 223, the ratio of the first organic substance is 40% %, the proportion of the second organic matter is 60%.
  • the first metal organic layer 221 and the second metal organic layer 224 may further include three, four, five or more metal organic mixed layers, but the metal organic mixed layer is in the first metal. In the direction from the organic layer 221 to the second metal organic layer 224, the proportion of the first metal organic substance gradually decreases, and the proportion of the second metal organic substance gradually increases.
  • the metal organic layer and the metal organic mixed layer have the same thickness, and the total proportion of the organic substances is the same. In other embodiments, the thickness of the metal organic layer and the metal organic mixed layer may also be different, and the total proportion of the metal organic matter is also different.
  • First metal precursor + organic group precursor first metal organic
  • Second metal precursor + organic group precursor second metal organic
  • the number of the barrier layers may also be three or more, and the barrier layer may further include two, three or more buffer layer portions, and the proportion of various metal organic substances is determined according to actual conditions.
  • the invention is not limited thereto.
  • the invention has the beneficial effects that the encapsulating film of the invention comprises at least two different metal organics or a mixture of at least two different metal organics, which can improve the adhesion between adjacent layers of the encapsulating film, compared with the prior art.
  • the adjacent layers of the packaging film are prevented from peeling from each other; the ability to resist the TFE stress is improved, the package film is prevented from being broken, and a plurality of reactants are simultaneously reacted to improve the production efficiency.
  • the above display panel can be used in various types of display devices.
  • FIG. 3 is a schematic flow chart of an embodiment of a method for fabricating a display panel of the present invention. As shown in FIG. 3, the steps of the method for manufacturing the display panel include:
  • the device layer can be prepared according to the prior art, and the present invention will not be described again.
  • the buffer layer comprises at least two different metal organic compounds or a mixture of at least two different metal organic substances, and at least two different Metal organics do not react with each other.
  • a first barrier layer is formed on the device layer; in a predetermined order, a material forming at least two different metalorganic materials is sequentially introduced, and a buffer layer constituting the buffer layers alternately formed on the first barrier layer is formed. At least two different metal organic layers; wherein the metal organic layer adjacent to the first barrier layer comprises the same metal element as the first barrier layer, and the metal organic layer adjacent to the second barrier layer includes and the second The same metal element as the barrier layer.
  • the buffer layer includes a first metal organic layer and a second metal organic layer, the first metal organic layer is adjacent to the first barrier layer, and the second metal organic layer is adjacent to the second barrier layer, not to the first barrier layer and
  • the partial buffer layer in contact with the second barrier layer is formed by alternately distributing the first metal organic layer and the second metal organic layer.
  • the thickness of the first metal organic layer gradually decreases from the first barrier layer to the second barrier layer, and the second metal organic layer The thickness gradually increases.
  • the first barrier layer is prepared by first feeding a raw material for preparing the first barrier layer, and the reaction formula is:
  • First metal precursor + oxidation precursor first metal oxide (first barrier layer)
  • Preparing a first metal organic layer by preparing a raw material for preparing the first metal organic layer, depositing a thin layer of stable thickness in a Cycle, setting the number of Cycles according to the required thickness, and setting the number of Cycles of the first metal organic layer to 30, the reaction formula is:
  • First metal precursor + organic group precursor first metal organic (first metal organic layer)
  • Second metal precursor + organic group precursor second metal organic (second metal organic layer)
  • the number of Cycles of the first metal organic layer is set to 20;
  • the number of Cycles of the second metal organic layer is set to 20;
  • Preparing a first metal organic layer by preparing a raw material for preparing the first metal organic layer, and setting the number of Cycles of the first metal organic layer to 10;
  • Preparing a second metal organic layer by preparing a raw material for preparing the second metal organic layer, and setting the number of Cycle of the second metal organic layer to 30;
  • a second barrier layer is prepared by feeding the raw material for preparing the second barrier layer, and the reaction formula is:
  • Second metal precursor + oxidation precursor second metal oxide (second barrier layer)
  • the number of the barrier layers may also be three or more, and the barrier layers may further include two, three, four, five or more.
  • the buffer layer, but the metal element in the buffer layer in contact with the barrier layer is the same as the metal element in the contact barrier layer, and the number of Cycles is determined according to actual conditions, which is not limited in the present invention.
  • a first barrier layer is formed on the device layer; at least two kinds of materials forming the buffer layer are formed on the first barrier layer by simultaneously introducing a material forming at least two different metalorganic materials in a predetermined ratio. a mixture of different metal organics; wherein the metal organic material adjacent to the first barrier layer comprises the same metal element as the first barrier layer, and the metal organic material adjacent to the second barrier layer comprises the same metal as the second barrier layer metal element.
  • the buffer layer includes a first metal organic layer and a second metal organic layer, the first metal organic layer is adjacent to the first barrier layer, and the second metal organic layer is adjacent to the second barrier layer, not to the first barrier layer and a portion of the buffer layer in contact with the second barrier layer is a mixture of a metal organic substance and a second metal organic substance.
  • the proportion of the first metal organic material layer gradually decreases from the first barrier layer to the second barrier layer, and the second metal organic layer occupies The proportion is gradually increasing.
  • the first barrier layer is prepared by first feeding a raw material for preparing the first barrier layer, and the reaction formula is:
  • First metal precursor + oxidation precursor first metal oxide (first barrier layer)
  • the first metal organic layer is prepared by feeding the raw material for preparing the first metal organic layer, and the reaction formula is:
  • First metal precursor + organic group precursor first metal organic (first metal organic layer)
  • Preparing a first metal organic mixed layer by preparing a raw material for preparing the first metal organic mixed layer, wherein the raw material ratio is required to satisfy a ratio of the first metal organic mixed layer, the first metal organic matter is 60%, and the second The proportion of metal organic matter is 40%, and the reaction formula is:
  • First metal precursor + organic group precursor first metal organic
  • Second metal precursor + organic group precursor second metal organic
  • first metal precursor and the second metal precursor cannot react.
  • Preparing a second metal organic mixed layer by preparing a raw material for preparing the second metal organic mixed layer, wherein the raw material ratio is required to satisfy a ratio of the first metal organic matter to the mixture of the second metal organic mixed layer, the proportion of the first metal organic substance is 40%, and the second The proportion of metal organic matter is 60%, and the reaction formula is mixed with the first metal organic compound;
  • Second metal precursor + organic group precursor second metal organic (second metal organic layer)
  • a second barrier layer is prepared by feeding the raw material for preparing the second barrier layer, and the reaction formula is:
  • Second metal precursor + oxidation precursor second metal oxide (second barrier layer)
  • the metal organic layer and the metal organic mixed layer have the same thickness, and the total proportion of the organic substances is the same. In other embodiments, the thickness of the metal organic layer and the metal organic mixed layer may also be different, and the total proportion of the metal organics is also different.
  • the number of the barrier layers may also be three or more, and the barrier layer may further include two, three or more buffer layer portions, and the proportion of various metal organic substances is determined according to actual conditions.
  • the invention is not limited thereto.

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Abstract

一种显示装置、显示面板及其制作方法，显示面板包括器件层（10），还包括依次叠置在器件层（10）上的第一阻隔层（11）、缓冲层（12）以及第二阻隔层（13），缓冲层（12）包括至少两种不同的金属有机物或至少两种不同的金属有机物的混合物，其中，至少两种不同的金属有机物相互之间不反应。本方案中显示面板可以提高封装薄膜相邻层之间的附着力，避免封装薄膜相邻层彼此剥离；提高抵抗TFE应力的能力，防止封装薄膜破裂；多种反应物同时反应，提高生产效率。

Description

显示装置、显示面板及其制作方法 【技术领域】
本发明涉及显示技术领域，特别是涉及一种显示装置、显示面板及其制作方法。
【背景技术】
OLED显示技术较之当前主流的液晶显示技术，具有对比度高、色域广、柔性、轻薄、节能等突出优点。近年来OLED显示技术逐渐在智能手机和平板电脑等移动设备、智能手表等柔性可穿戴设备、大尺寸曲面电视、白光照明等领域普及，发展势头强劲。
OLED器件因具有较多的优点，在显示领域有着光明的前景。但是，OLED器件中用于形成金属阴极的活泼金属对空气中的水汽和氧气非常敏感，非常容易与渗透进来的水汽发生反应，影响电荷的注入。另外，渗透进来的水汽和氧气还会与有机材料发生化学反应，这些反应是引起OLED器件性能下降、OLED器件寿命缩短的主要因素。因此，封装技术对OLED器件非常重要。目前，OLED器件有多种封装方式，例如：薄膜封装(Thin Film Encapsulation，简称TFE)、玻盖(Glass)封装方式和玻璃粉(Frit)封装方式。其中，最常用的是薄膜封装方式，即采用CVD或ALD等技术沉积透明薄膜对OLED器件进行封装，该封装方式具有工艺简单，能保持封装对象的轻、薄结构特性。
ALD(原子层沉积法)技术是柔性AMOLED薄膜封装技术的关键技术之一。当前主要有两大类：(1)反应物依次从基板一侧注入，均匀流过基板表面，每种反应物之间通氮气隔离。所有气体从基板另一侧排气。一个Cycle(沉积循环)沉积一个厚度稳定的薄层，根据需求的厚度设置Cycle数量。(2)反应物依次从各自喷嘴喷出，经过基板表面并由排气口抽出，每个cycle包括以及隔绝下一cycle的氮气pulse构成。基板或喷嘴左右均匀移动，实现反应物依次从基板表面流过，形成一个Cycle，沉积一个厚度稳定的薄层，根据需求的厚度设置Cycle数量。
目前，最常见的薄膜封装采用无机金属层/有机缓冲层/无机金属层交替的方式，无机材料用于阻隔水氧，有机材料用于有效的覆盖颗粒物以及缓冲弯曲、 折叠过程中的应力。利用原子层沉积法(ALD)制备氧化铝(Al2O3)、氧化锆(ZrO2)薄膜。其反应式为：
金属前驱体+有机基团前驱体＝金属有机物(缓冲层)
金属前驱体+氧化前驱体＝金属氧化物(阻隔层)
但是这种模式存在以下缺点：由于有机层消除TFE应力的能力有限，容易造成TFE破损，后续封装薄膜各层的制备工艺需要隔离进行，生产效率低下。
【发明内容】
本发明主要解决的技术问题是提供一种显示装置、显示面板及其制作方法，能够提高封装薄膜对抵抗应力的能力、提高生产效率。
为解决上述技术问题，本发明采用一个技术方案是：提供一种基于有机发光二极管OLED的显示面板，所述显示面板包括器件层，还包括依次叠置在所述器件层上的第一阻隔层、缓冲层以及第二阻隔层，所述缓冲层包括至少两种不同的金属有机物或所述至少两种不同的金属有机物的混合物，其中，所述至少两种不同的金属有机物相互之间不反应。
为解决上述技术问题，本发明采用的第二个技术方案是：提供一种基于有机发光二极管OLED的显示装置，所述显示装置包括显示面板，所述显示面板包括器件层，还包括依次叠置在所述器件层上的第一阻隔层、缓冲层以及第二阻隔层，所述缓冲层包括至少两种不同的金属有机物或所述至少两种不同的金属有机物的混合物，其中，所述至少两种不同的金属有机物相互之间不反应。
为解决上述技术问题，本发明采用的第三个技术方案是：提供一种有机发光二极管OLED的制作方法，所述制作方法包括：制备器件层；在所述器件层依次形成第一阻隔层、缓冲层以及第二阻隔层；其中，所述缓冲层包括至少两种不同的金属有机物或所述至少两种不同的金属有机物的混合物，且，所述至少两种不同的金属有机物相互之间不反应。
本发明的有益效果是：与现有技术相比，本发明的封装薄膜包括至少两种不同的金属有机物或至少两种不同的金属有机物的混合物，可以提高封装薄膜相邻层之间的附着力，避免封装薄膜相邻层彼此剥离；提高抵抗TFE应力的能力，防止封装薄膜破裂；多种反应物同时反应，提高生产效率。
【附图说明】
图1是本发明显示面板第一实施例的结构示意图；
图2是本发明显示面板第二实施例的结构示意图；
图3是本发明显示面板制作方法一实施例的流程示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，均属于本发明保护的范围。
本发明提供一种基于有机发光二极管OLED的显示面板，该显示面板包括器件层，还包括依次叠置在所述器件层上的第一阻隔层、缓冲层以及第二阻隔层，所述缓冲层包括至少两种不同的金属有机物或所述至少两种不同的金属有机物的混合物，其中，所述至少两种不同的金属有机物相互之间不反应。
为了清楚说明上述显示面板的具体结构，参阅图1，图1是本发明显示面板第一实施例的结构示意图。
如图1所示，本实施方式中的显示面板包括器件层10，还包括依次叠置在器件层10上的第一阻隔层11、缓冲层12以及第二阻隔层13。
第一阻隔层10和第二阻隔层13的金属氧化物可以是Al2O3、TiO2、ZrO2等。缓冲层12包括第一金属有机物和第二金属有机物，这两种不同的金属有机物相互之间不反应。在其他实施方式中，缓冲层12也可以包括3种或3种以上的不同的金属有机物，本发明对此均不作限定。
其中，缓冲层12与第一阻隔层11接触的部分和第一阻隔层11的金属元素相同，缓冲层12与第二阻隔层13接触的部分和第二阻隔层13的金属元素相同。由于同一金属的有机物和氧化物之间的界面接触较佳，附着力较强，本实施方式中，封装薄膜的相邻层中的金属元素相同可以有效的防止封装薄膜的相邻层局部剥离。
在一个可选的实施方式中，继续参阅图1，缓冲层12包括第一金属有机物层121和第二金属有机物层126，第一金属有机物层121与第一阻隔层11接触， 第一金属有机物层121包括与第一阻隔层11相同的第一金属元素；第二金属有机物层126与第二阻隔层13接触，第二金属有机物层126包括与第二阻隔层13相同的第二金属元素。
第一金属有机物层121和第二金属有机物层126之间还包括依次叠置的第二金属有机物层122、第一金属有机物层123、第二金属有机物层124、第一金属有机物层125。第一金属有机物层121、第一金属有机物层123和第一金属有机物层125的材料相同，且厚度从第一阻隔层11到第二阻隔层13的方向逐渐减小；第二金属有机物层122、第二金属有机物层124和第二金属有机物层126的材料相同，且厚度从第一阻隔层11到第二阻隔层13的方向逐渐增大。例如，ALD(原子层沉积法)技术中，一个Cycle(沉积循环)沉积一个厚度稳定的薄层，根据需求的厚度设置Cycle数量，将第一金属有机物层121的Cycle数量设置为30、第二金属有机物层122的Cycle数量设置为10、第一金属有机物层123的Cycle数量设置为20、第二金属有机物层124的Cycle数量设置为20、第一金属有机物层125的Cycle数量设置为10、第二金属有机物层126的Cycle数量设置为30。
在本实施方式中，第一金属有机物层和第二金属有机层在阻隔层之间交替分布，每组相邻的第一金属有机物层和第二金属有机层总厚度相同。在其他实施方式中，每组相邻的第一金属有机物层和第二金属有机层总厚度也可以不相同。
在其他实施方式中，阻隔层的数量也可以是3个或者以上，阻隔层之间还可以包括2个、3个、4个、5个或更多的缓冲层部分，Cycle数量的设置根据实际情况决定，本发明对此均不作限定。
上述显示面板可以被用于各类显示装置中。
通过上述方式，本实施方式的封装薄膜包括至少两种不同的金属有机物或至少两种不同的金属有机物的混合物，可以提高封装薄膜相邻层之间的附着力，避免封装薄膜相邻层彼此剥离；提高抵抗TFE应力的能力，防止封装薄膜破裂。
另外，本发明还能使多种反应物同时反应，提高生产效率。
在另一个实施方式中，参阅图2，图2是本发明显示面板第二实施例的结构示意图。
如图2所示，该显示面板包括器件层20，还包括依次叠置在器件层20上的第一阻隔层21、缓冲层22以及第二阻隔层23。第一阻隔层21和第二阻隔层23 的金属氧化物可以是Al2O3、TiO2、ZrO2等。缓冲层22包括两种不同的金属有机物的混合物，这两种不同的金属有机物相互之间不反应。在其他实施方式中，缓冲层12也可以包括3种或3种以上的不同的金属有机物，本发明对此均不作限定。
其中，缓冲层22与第一阻隔层21接触的部分和第一阻隔层21的金属元素相同，缓冲层22与第二阻隔层23接触的部分和第二阻隔层23的金属元素相同。由于同一金属的有机物和氧化物之间的界面接触较佳，附着力较强，本实施方式中，封装薄膜的相邻层中的金属元素相同可以有效的防止封装薄膜的相邻层局部剥离。
在一个可选的实施方式中，继续参阅图2，缓冲层22包括第一金属有机物层221和第二金属有机物层224，第一金属有机物层221与第一阻隔层21接触，第一金属有机物层221包括与第一阻隔层21相同的第一金属元素；第二金属有机物层224与第二阻隔层23接触，第二金属有机物层224包括与第二阻隔层23相同的第二金属元素。
第一金属有机物层221和第二金属有机物层224之间还包括依次叠置的第一金属有机物混合层222和第二金属有机物混合层223。第一金属有机物层221的材料为第一金属有机物，第二金属有机物层224的材料为第二金属有机物，第一金属有机物混合层222和第二金属有机物混合层223为第一金属有机物和第二金属有机物的混合物，但两种金属有机物在第一金属有机物混合层222和第二金属有机物混合层223中所占的比例不同，从第一金属有机物层221到第二金属有机物层224的方向，第一金属有机物所占比例逐渐降低，第二金属有机物所占比例逐渐增大。例如，第一金属有机物混合层222中，第一金属有机物所占比例为60％，第二金属有机物所占比例为40％；第二金属有机物混合层223中，第一有机物所占比例为40％，第二有机物所占比例为60％。在其他实施方式中，第一金属有机物层221和第二金属有机物层224之间还可以包括3个、4个、5个或更多的金属有机物混合层，但是金属有机物混合层在第一金属有机物层221到第二金属有机物层224的方向上，第一金属有机物的所占比例逐渐减少，第二金属有机物的所占比例逐渐增大。
在本实施方式中，金属有机物层和金属有机物混合层的厚度相同，且有机物所占的总比例相同。在其他实施方式中，金属有机物层和金属有机物混合层厚度也可以不相同，金属有机物所占的总比例也不相同。
需要说明的是，缓冲层中混合物的制备反应式为：
第一金属前驱体+有机基团前驱体＝第一金属有机物
第二金属前驱体+有机基团前驱体＝第二金属有机物
也就是说，在制备金属有机物混合层的时候需要同时加入两种不同的金属前驱体，因此，本发明中金属有机物混合层所用的两种不同的金属前驱体不能发生反应。由于可以同时制备两种金属有机物，大大提高了生产效率。
在其他实施方式中，阻隔层的数量也可以是3个或者以上，阻隔层之间还可以包括2个、3个或更多的缓冲层部分，各种金属有机物所占比例根据实际情况决定，本发明对此均不作限定。
本发明的有益效果是：与现有技术相比，本发明的封装薄膜包括至少两种不同的金属有机物或至少两种不同的金属有机物的混合物，可以提高封装薄膜相邻层之间的附着力，避免封装薄膜相邻层彼此剥离；提高抵抗TFE应力的能力，防止封装薄膜破裂；多种反应物同时反应，提高生产效率。
上述显示面板可以被用于各类显示装置中。
参阅图3，图3是本发明显示面板制作方法一实施例的流程示意图。如图3所示，该显示面板制作方法的步骤包括：
301：制备器件层。
按照现有技术制备器件层即可，本发明对此不再赘述。
302：在器件层依次形成第一阻隔层、缓冲层以及第二阻隔层；其中，缓冲层包括至少两种不同的金属有机物或至少两种不同的金属有机物的混合物，且，至少两种不同的金属有机物相互之间不反应。
在一个实施方式中，在器件层上形成第一阻隔层；按照预设顺序，依次通入形成至少两种不同的金属有机物的原料，在第一阻隔层上形成相互交替分布的构成缓冲层的至少两种不同的金属有机物层；其中，与第一阻隔层相邻接触的金属有机物层包括与第一阻隔层相同的金属元素，与第二阻隔层相邻接触的金属有机物层包括与第二阻隔层相同的金属元素。缓冲层包括第一金属有机物层和第二金属有机物层，第一金属有机物层与第一阻隔层相邻接触，第二金属有机物层与第二阻隔层相邻接触，未与第一阻隔层以及第二阻隔层接触的部分缓冲层为第一金属有机物层与第二金属有机物层交替分布而构成。第一金属有机物层与第二金属有机物层交替分布而构成的部分缓冲层中，从第一阻隔层到第二阻隔层的方向，第一金属有机物层的厚度逐渐降低，第二金属有机物层的 厚度逐渐增大。
优选地，首先通入制备第一阻隔层的原料制备第一阻隔层，反应式为：
第一金属前驱体+氧化前驱体＝第一金属氧化物(第一阻隔层)
通入制备第一金属有机物层的原料制备第一金属有机物层，一个Cycle(沉积循环)沉积一个厚度稳定的薄层，根据需求的厚度设置Cycle数量，将第一金属有机物层的Cycle数量设置为30，反应式为：
第一金属前驱体+有机基团前驱体＝第一金属有机物(第一金属有机物层)
通入制备第二金属有机物层的原料制备第二金属有机物层，将第二金属有机物层的Cycle数量设置为10，反应式为：
第二金属前驱体+有机基团前驱体＝第二金属有机物(第二金属有机物层)
通入制备第一金属有机物层的原料制备第一金属有机物层，将第一金属有机物层的Cycle数量设置为20；
通入制备第二金属有机物层的原料制备第二金属有机物层，将第二金属有机物层的Cycle数量设置为20；
通入制备第一金属有机物层的原料制备第一金属有机物层，将第一金属有机物层的Cycle数量设置为10；
通入制备第二金属有机物层的原料制备第二金属有机物层，将第二金属有机物层的Cycle数量设置为30；
通入制备第二阻隔层的原料制备第二阻隔层，反应式为：
第二金属前驱体+氧化前驱体＝第二金属氧化物(第二阻隔层)
需要说明的是，以上只是举例说明，在其他实施方式中，阻隔层的数量也可以是3个或者以上，阻隔层之间还可以包括2个、3个、4个、5个或更多的缓冲层，但是缓冲层中与阻隔层接触部分的金属元素与接触的阻隔层中的金属元素相同，Cycle数量设置根据实际情况决定，本发明对此均不作限定。
在另一个实施方式中，在器件层上形成第一阻隔层；按照预设比例，同时通入形成至少两种不同的金属有机物的原料，在第一阻隔层上形成构成缓冲层的至少两种不同的金属有机物的混合物；其中，与第一阻隔层相邻接触的金属有机物包括与第一阻隔层相同的金属元素，与第二阻隔层相邻接触的金属有机物包括与第二阻隔层相同的金属元素。缓冲层包括第一金属有机物层和第二金属有机物层，第一金属有机物层与第一阻隔层相邻接触，第二金属有机物层与第二阻隔层相邻接触，未与第一阻隔层以及第二阻隔层接触的部分缓冲层为第 一金属有机物与第二金属有机物的混合物。第一金属有机物与第二金属有机物的混合物组成的缓冲层中，从第一阻隔层到第二阻隔层的方向，第一金属有机物层的所占比例逐渐降低，第二金属有机物层的所占比例逐渐增大。
优选地，首先通入制备第一阻隔层的原料制备第一阻隔层，反应式为：
第一金属前驱体+氧化前驱体＝第一金属氧化物(第一阻隔层)
通入制备第一金属有机物层的原料制备第一金属有机物层，反应式为：
第一金属前驱体+有机基团前驱体＝第一金属有机物(第一金属有机物层)
通入制备第一金属有机物混合层的原料制备第一金属有机物混合层，其中，原料配比需要满足使第一金属有机物混合层的混合物中，第一金属有机物所占比例为60％，第二金属有机物所占比例为40％，反应式为：
第一金属前驱体+有机基团前驱体＝第一金属有机物
第二金属前驱体+有机基团前驱体＝第二金属有机物
需要说明的是，第一金属前驱体和第二金属前驱体不能发生反应。
通入制备第二金属有机物混合层的原料制备第二金属有机物混合层，其中，原料配比需要满足使第二金属有机物混合层的混合物中，第一金属有机物所占比例为40％，第二金属有机物所占比例为60％，反应式同第一金属有机物混合层；
通入制备第二金属有机物层的原料制备第二金属有机物层，反应式为；
第二金属前驱体+有机基团前驱体＝第二金属有机物(第二金属有机物层)
通入制备第二阻隔层的原料制备第二阻隔层，反应式为：
第二金属前驱体+氧化前驱体＝第二金属氧化物(第二阻隔层)
在本实施方式中，金属有机物层和金属有机物混合层的厚度相同，且有机物的总比例相同。在其他实施方式中，金属有机物层和金属有机物混合层厚度也可以不相同，金属有机物的总比例也不相同。
在其他实施方式中，阻隔层的数量也可以是3个或者以上，阻隔层之间还可以包括2个、3个或更多的缓冲层部分，各种金属有机物所占比例根据实际情况决定，本发明对此均不作限定。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (19)

  1. 一种基于有机发光二极管OLED的显示面板，其中，所述显示面板包括器件层，还包括依次叠置在所述器件层上的第一阻隔层、缓冲层以及第二阻隔层，所述缓冲层包括至少两种不同的金属有机物或所述至少两种不同的金属有机物的混合物，其中，所述至少两种不同的金属有机物相互之间不反应。
  2. 根据权利要求1所述的显示面板，其中，与所述第一阻隔层相邻接触的部分缓冲层包括与所述第一阻隔层相同的金属元素，与所述第二阻隔层相邻接触的部分缓冲层包括与所述第二阻隔层相同的金属元素。
  3. 根据权利要求2所述的显示面板，其中，所述缓冲层包括第一金属有机物层和第二金属有机物层，所述第一金属有机物层与所述第一阻隔层相邻接触，所述第二金属有机物层与所述第二阻隔层相邻接触，未与所述第一阻隔层以及所述第二阻隔层接触的部分缓冲层为所述第一金属有机物层与所述第二金属有机物层交替分布而构成。
  4. 根据权利要求3所述的显示面板，其中，所述第一金属有机物层与所述第二金属有机物层交替分布而构成的部分缓冲层中，从所述第一阻隔层到所述第二阻隔层的方向，所述第一金属有机物层的厚度逐渐降低，所述第二金属有机物层的厚度逐渐增大。
  5. 根据权利要求2所述的显示面板，其中，所述缓冲层包括第一金属有机物层和第二金属有机物层，所述第一金属有机物层与所述第一阻隔层相邻接触，所述第二金属有机物层与所述第二阻隔层相邻接触，未与所述第一阻隔层以及所述第二阻隔层接触的部分缓冲层为第一金属有机物与第二金属有机物的混合物。
  6. 根据权利要求5所述的显示面板，其中，所述第一金属有机物与第二金属有机物的混合物组成的缓冲层中，从所述第一阻隔层到所述第二阻隔层的方向，所述第一金属有机物层的所占比例逐渐降低，所述第二金属有机物层的所占比例逐渐增大。
  7. 一种基于有机发光二极管OLED的显示装置，其中，所述显示装置包括显示面板，所述显示面板包括器件层，还包括依次叠置在所述器件层上的第一阻隔层、缓冲层以及第二阻隔层，所述缓冲层包括至少两种不同的金属有机物或 所述至少两种不同的金属有机物的混合物，其中，所述至少两种不同的金属有机物相互之间不反应。
  8. 根据权利要求7所述的显示装置，其中，与所述第一阻隔层相邻接触的部分缓冲层包括与所述第一阻隔层相同的金属元素，与所述第二阻隔层相邻接触的部分缓冲层包括与所述第二阻隔层相同的金属元素。
  9. 根据权利要求8所述的显示装置，其中，所述缓冲层包括第一金属有机物层和第二金属有机物层，所述第一金属有机物层与所述第一阻隔层相邻接触，所述第二金属有机物层与所述第二阻隔层相邻接触，未与所述第一阻隔层以及所述第二阻隔层接触的部分缓冲层为所述第一金属有机物层与所述第二金属有机物层交替分布而构成。
  10. 根据权利要求9所述的显示装置，其中，所述第一金属有机物层与所述第二金属有机物层交替分布而构成的部分缓冲层中，从所述第一阻隔层到所述第二阻隔层的方向，所述第一金属有机物层的厚度逐渐降低，所述第二金属有机物层的厚度逐渐增大。
  11. 根据权利要求8所述的显示装置，其中，所述缓冲层包括第一金属有机物层和第二金属有机物层，所述第一金属有机物层与所述第一阻隔层相邻接触，所述第二金属有机物层与所述第二阻隔层相邻接触，未与所述第一阻隔层以及所述第二阻隔层接触的部分缓冲层为第一金属有机物与第二金属有机物的混合物。
  12. 根据权利要求11所述的显示装置，其中，所述第一金属有机物与第二金属有机物的混合物组成的缓冲层中，从所述第一阻隔层到所述第二阻隔层的方向，所述第一金属有机物层的所占比例逐渐降低，所述第二金属有机物层的所占比例逐渐增大。
  13. 一种有机发光二极管OLED的制作方法，其中，所述制作方法包括：
    制备器件层；
    在所述器件层依次形成第一阻隔层、缓冲层以及第二阻隔层；其中，所述缓冲层包括至少两种不同的金属有机物或所述至少两种不同的金属有机物的混合物，且，所述至少两种不同的金属有机物相互之间不反应。
  14. 根据权利要求13所述的制作方法，其中，所述在所述器件层依次形成第一阻隔层、缓冲层以及第二阻隔层的步骤具体包括：
    在所述器件层上形成第一阻隔层；
    按照预设顺序，依次通入形成所述至少两种不同的金属有机物的原料，在所述第一阻隔层上形成相互交替分布的构成所述缓冲层的至少两种不同的金属有机物层；
    其中，与所述第一阻隔层相邻接触的金属有机物层包括与所述第一阻隔层相同的金属元素，与所述第二阻隔层相邻接触的金属有机物层包括与所述第二阻隔层相同的金属元素。
  15. 根据权利要求14所述的制作方法，其中，所述缓冲层包括第一金属有机物层和第二金属有机物层，所述第一金属有机物层与所述第一阻隔层相邻接触，所述第二金属有机物层与所述第二阻隔层相邻接触，未与所述第一阻隔层以及所述第二阻隔层接触的部分缓冲层为所述第一金属有机物层与所述第二金属有机物层交替分布而构成。
  16. 根据权利要求15所述的制作方法，其中，所述第一金属有机物层与所述第二金属有机物层交替分布而构成的部分缓冲层中，从所述第一阻隔层到所述第二阻隔层的方向，所述第一金属有机物层的厚度逐渐降低，所述第二金属有机物层的厚度逐渐增大。
  17. 根据权利要求13所述的制作方法，其中，所述在所述器件层依次形成第一阻隔层、缓冲层以及第二阻隔层的步骤具体包括：
    在所述器件层上形成第一阻隔层；
    按照预设比例，同时通入形成所述至少两种不同的金属有机物的原料，在所述第一阻隔层上形成构成所述缓冲层的至少两种不同的金属有机物的混合物；
    其中，与所述第一阻隔层相邻接触的金属有机物包括与所述第一阻隔层相同的金属元素，与所述第二阻隔层相邻接触的金属有机物包括与所述第二阻隔层相同的金属元素。
  18. 根据权利要求17所述的制作方法，其中，所述缓冲层包括第一金属有机物层和第二金属有机物层，所述第一金属有机物层与所述第一阻隔层相邻接触，所述第二金属有机物层与所述第二阻隔层相邻接触，未与所述第一阻隔层以及所述第二阻隔层接触的部分缓冲层为第一金属有机物与第二金属有机物的混合物。
  19. 根据权利要求18所述的制作方法，其中，所述第一金属有机物与第二金属有机物的混合物组成的缓冲层中，从所述第一阻隔层到所述第二阻隔层的 方向，所述第一金属有机物层的所占比例逐渐降低，所述第二金属有机物层的所占比例逐渐增大。
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