WO2019085020A1 - 液晶显示器及其显示模组 - Google Patents

液晶显示器及其显示模组 Download PDF

Info

Publication number
WO2019085020A1
WO2019085020A1 PCT/CN2017/110924 CN2017110924W WO2019085020A1 WO 2019085020 A1 WO2019085020 A1 WO 2019085020A1 CN 2017110924 W CN2017110924 W CN 2017110924W WO 2019085020 A1 WO2019085020 A1 WO 2019085020A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
liquid crystal
wire grid
metal
display module
Prior art date
Application number
PCT/CN2017/110924
Other languages
English (en)
French (fr)
Inventor
查国伟
Original Assignee
武汉华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Priority to US15/736,174 priority Critical patent/US10656457B2/en
Publication of WO2019085020A1 publication Critical patent/WO2019085020A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G02F1/133548—Wire-grid polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to a liquid crystal display and a display module thereof.
  • OLED Organic Light Emitting Display
  • LCD Liquid crystal display
  • the use of a flexible substrate instead of the conventional glass substrate does not mean solving all the problems.
  • the liquid crystal display is The light needs to go through a long path in the thickness direction, and the local thickness variation caused by the bending process causes obvious light propagation direction change and color crosstalk; on the other hand, the local stress caused by bending makes the non-bearing film in the conventional liquid crystal cell
  • the layer is prone to brittle fracture, resulting in dysfunction, which is especially prominent for the conductive layer.
  • the conductive layer is generally a transparent conductive layer ITO, and the transparent conductive layer ITO is a brittle material, which is prone to fracture during bending.
  • the present invention provides a liquid crystal display capable of solving the problem that the transparent electrode ITO is susceptible to brittle fracture during bending and causing electrical malfunction, and at the same time, the contrast of the entire liquid crystal display can be improved.
  • a specific technical solution provided by the present invention is to provide a display module, the display module includes a lower polarizer, a TFT array substrate, a liquid crystal layer, a color filter, and an upper polarizer, and the liquid crystal layer is located at the Between the polarizer and the upper polarizer, the TFT array substrate is located between the lower polarizer and the liquid crystal layer, and the color filter is located between the liquid crystal layer and the upper polarizer
  • the display module further includes a metal electrode layer disposed between the color filter and the liquid crystal layer, the metal electrode layer includes a dielectric layer and a metal wire grid layer, and the metal wire grid layer is provided The dielectric layer faces one side of the liquid crystal layer.
  • the color filter comprises a flat layer, a filter layer and a substrate, the filter layer is located between the flat layer and the substrate, the flat layer is located at the filter layer and the Between the dielectric layers, the filter layer includes a photoresist disposed on the substrate and a black matrix disposed between any adjacent two of the photoresists.
  • a region of the metal wire grid layer corresponding to the photoresist is disposed with a first wire grid unit, and each of the first wire grid cells includes a plurality of first metal strips arranged in parallel at equal intervals.
  • the polarization direction of each of the first wire grid units is the same as the direction of the absorption axis of the upper polarizer.
  • a region of the metal wire grid layer corresponding to the black matrix is disposed with a second wire grid unit, and each of the second wire grid cells includes a plurality of second metal strips arranged in parallel at equal intervals.
  • the width of the first metal strip is equal to the width of the second metal strip, and/or the thickness of the first metal strip and the second metal strip are both 10 nm to 100 nm.
  • an interval between adjacent two first metal strips in each of the first wire grid cells and an interval between two adjacent second metal strips in each of the second wire grid cells not equal.
  • the materials of the first metal strip and the second metal strip are each selected from at least one of Al, Ag or Au.
  • the interval between two adjacent first metal strips in each of the first wire grid units is 20-500 nm, and the duty ratio of each of the first wire grid units is 0.1-0.9. .
  • the material of the dielectric layer is selected from one of SiO 2 , SiO, MgO, Si 3 N 4 , TiO 2 , and Ta 2 O 5 .
  • the present invention also provides a liquid crystal display comprising a backlight module and a display module as described above, wherein the display module is disposed on the backlight module.
  • the display module provided by the invention comprises a metal electrode layer, the metal electrode layer comprises a dielectric layer and gold a wire grid layer, the metal wire grid layer is disposed on a side of the dielectric layer facing the liquid crystal layer, and the metal wire grid layer is used as a common electrode layer of the display module, thereby replacing the traditional transparent electrode ITO to avoid transparency
  • the electrode ITO is prone to brittle fracture during bending, causing electrical malfunction, and at the same time, can improve the contrast of the entire liquid crystal display.
  • FIG. 1 is a schematic structural view of a liquid crystal display device of Embodiment 1;
  • Embodiment 2 is a schematic structural view of a metal wire grid layer in Embodiment 1;
  • FIG. 3 is a schematic structural view of a liquid crystal display device of Embodiment 2;
  • Embodiment 4 is a schematic structural view of a metal wire grid layer in Embodiment 2.
  • the liquid crystal display in this embodiment includes a backlight module 1 and a display module 2 .
  • the display module 2 includes a lower polarizer 21, a TFT array substrate 22, a liquid crystal layer 23, a color filter 24, and an upper polarizer 25.
  • the liquid crystal layer 23 is located between the lower polarizer 21 and the upper polarizer 25, and the TFT array substrate 22 Located between the lower polarizer 21 and the liquid crystal layer 23, the color filter 24 is located between the liquid crystal layer 23 and the upper polarizer 25.
  • the display module 2 further includes a metal electrode layer 26 disposed between the color filter 24 and the liquid crystal layer 23.
  • the metal electrode layer 26 includes a dielectric layer 261 and a metal wire gate layer 262.
  • the metal wire gate layer 262 is disposed on the dielectric layer 261. It faces one side of the liquid crystal layer 23.
  • the metal wire grid layer 262 serves as a common electrode layer of the display module 2, replacing the existing transparent electrode ITO, thereby avoiding the problem that the transparent electrode ITO is susceptible to brittle fracture during bending and causing electrical malfunction.
  • the color filter 24 in this embodiment includes a flat layer 241, a filter layer 242, and a substrate 243.
  • the filter layer 242 is located between the flat layer 241 and the substrate 243.
  • the flat layer 241 is located between the filter layer 242 and the dielectric layer 261.
  • the filter layer 242 includes a photoresist 242a disposed on the substrate 243 and disposed adjacent to the substrate.
  • the photoresist 242a includes a red photoresist, a green photoresist, and a blue photoresist.
  • the red photoresist can transmit red light
  • the green photoresist can transmit light
  • the blue photoresist can transmit blue light.
  • the black matrix 242b does not allow light to pass through.
  • a black matrix 242b is formed on the surface of the substrate 243, then a plurality of pixel opening regions are formed on the black matrix 242b, and finally a photoresist material is filled in the pixel opening region to form a photoresist 242a.
  • the thickness of the stopper 242a is larger than the thickness of the black matrix 242b, thereby forming the filter layer 242 on the surface of the substrate 243.
  • a flat layer 241 is formed on the surface of the black matrix 242b and the photoresist 242a.
  • the TFT array substrate 22 and the substrate 243 in this embodiment are all flexible substrates, and the material of the flexible substrate is selected from polymethyl methacrylate, polycarbonate, polyethylene, polypropylene, polyethylene terephthalate or Polyimide.
  • a region corresponding to the photoresist layer 262 and the photoresist 242a is disposed with a first wire grid unit 10, and each of the first wire grid cells 10 includes a plurality of first metal strips 100 arranged in parallel at equal intervals.
  • a first wire grid unit 10 has the same polarization direction as the absorption axis of the upper polarizer 25, and is capable of transmitting TM polarized light whose polarization direction is perpendicular to the first metal strip 100, and the reflection polarization direction is parallel to the first metal strip 100.
  • the TE polarized light acts similarly to the upper polarizer 25, so that the degree of polarization of the liquid crystal display can be further increased.
  • the ambient light passes through the upper polarizing plate 25 to form polarized light, and the polarized light is completely transmitted through the first wire grid unit 10, so that polarized light of other polarization directions can be prevented from being reflected by the first wire grid unit 10 when it passes through the first wire grid unit 10 .
  • the first wire grid unit 10 corresponding to the photoresist 242a of the same color is the same, and the first wire grid cells 10 corresponding to the photoresists 242a of different colors may be the same or different.
  • the photoresist 242a corresponding to different colors is shown in FIG.
  • the first wire grid cells 10 are all the same.
  • the area corresponding to the metal wire grid layer 262 and the black matrix 242b is a full-surface structure, and light is not transmitted, and the flexibility of the metal wire gate layer 262 can be further increased.
  • the width of the first metal strip 100 is 10 nm to 100 nm, and the material of the first metal strip 100 is at least one selected from the group consisting of Al, Ag, and Au.
  • the interval between two adjacent first metal strips 100 in each of the first wire grid units 10 is 20 to 500 nm, and the duty ratio of each of the first wire grid units 10 is 0.1 to 0.9.
  • the material of the dielectric layer 261 in this embodiment is selected from one of SiO 2 , SiO, MgO, Si 3 N 4 , TiO 2 , and Ta 2 O 5 .
  • the backlight module 1 in this embodiment is a side-in type backlight module, and includes a backlight 11 , a light guide plate 12 , and an optical film group 13 .
  • the backlight 11 is disposed on a side surface of the light guide plate 12, wherein the light incident surface of the light guide plate 12 refers to a surface of the light guide plate 12 facing the backlight 11.
  • the optical film group 13 is located between the light guide plate 12 and the lower polarizer 21.
  • the light emitted from the backlight 11 is incident on the light guide plate 12 and is reflected by the light guide plate 12 multiple times, and then exits from the light exit surface of the light guide plate 12.
  • the light exit surface of the light guide plate 12 refers to the light guide plate 12 and the optical film group 13 The opposite side.
  • the light emitted from the light exit surface of the light guide plate 12 is incident on the optical film group 13.
  • the optical film group 13 includes a lower diffusion sheet 13a, a light-increasing sheet 13b, and an upper diffusion sheet 13c which are disposed in this order from the bottom to the top.
  • the upper diffusion sheet 13c is located between the brightness enhancement sheet 13b and the display module 2
  • the lower diffusion sheet 13a is located between the brightness enhancement sheet 13b and the light guide plate 12.
  • the lower diffusion sheet 13a is for collectively projecting the light emitted from the light-emitting surface of the light guide plate 12 onto the light-increasing sheet 13b
  • the light-increasing sheet 13b is for collecting the dispersed light emitted from the lower diffusion sheet 13a to increase the brightness and spread the light.
  • the sheet 13c is for atomizing the light emitted from the brightness enhancement sheet 13b, and uniformly emits the light.
  • the brightness enhancement sheet 13b is usually a prism sheet.
  • the backlight module 1 in this embodiment further includes a reflective layer 14 disposed at the bottom of the light guide plate 12.
  • the reflective layer 14 may be a reflective sheet or a reflective coating applied to the bottom of the light guide plate 12.
  • the difference between the embodiment and the embodiment 1 is that the region corresponding to the black matrix 242b of the metal wire grid layer 262 in the embodiment is provided with the second wire grid unit 20, and each second wire grid unit Each of the 20 includes a plurality of second metal strips 200 arranged in parallel at equal intervals.
  • Each of the second wire grid units 20 has the same polarization direction as the absorption axis of the upper polarizer 25, and is capable of transmitting TM polarized light whose polarization direction is perpendicular to the second metal strip 200, and the reflection polarization direction is parallel to the second metal strip 200.
  • the TE polarized light acts similarly to the upper polarizer 25.
  • the polarized light transmitted from the second wire grid unit 20 is blocked by the black matrix 242b.
  • the region corresponding to the black wire matrix 262b and the black matrix 242b is also a wire grid structure, so that the bending ability of the metal wire gate layer 262 can be further increased, and the reliability of the liquid crystal display can be improved.
  • the width of the second metal strip 200 is equal to the width of the first metal strip 100, that is, the width of the second metal strip 200 is also 10 nm to 100 nm, and the material of the second metal strip 200 is selected from at least one of Al, Ag or Au. .
  • Each The interval between two adjacent second metal strips 200 in the second wire grid unit 20 is 20 to 500 nm, and the duty ratio of each of the second wire grid units 20 is 0.1 to 0.9.
  • the second wire grid unit 20 is electrically connected to the first wire grid unit 10, and the structure of the second wire grid unit 20 may be the same as or different from the structure of the first wire grid unit 10.

Abstract

一种液晶显示器及其显示模组（2），显示模组（2）包括下偏光片（21）、TFT阵列基板（22）、液晶层（23）、彩色滤光片（24）、上偏光片（25），液晶层（23）位于下偏光片（21）和上偏光片（25）之间，TFT阵列基板（22）位于下偏光片（21）与液晶层（23）之间，彩色滤光片（24）位于液晶层（23）与上偏光片（25）之间，显示模组（2）还包括设于彩色滤光片（24）与液晶层（23）之间的金属电极层（26），金属电极层（26）包括介质层（261）及金属线栅层（262），金属线栅层（262）设于介质层（261）朝向液晶层（23）的一面。将金属线栅层（262）作为显示模组（2）的公共电极层，从而取代了传统的透明电极ITO，避免透明电极ITO容易在弯曲过程中出现脆性断裂而导致电气失常的问题，同时，能够提升整个液晶显示器的对比度。

Description

液晶显示器及其显示模组 技术领域
本发明涉及液晶显示技术领域，尤其涉及一种液晶显示器及其显示模组。
背景技术
随着可穿戴应用设备如智能眼镜、智能手表等的逐渐兴起，显示行业对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件(Organic Light Emitting Display，OLED)具有自发光、厚度薄、视角广、反应速度快等特点，从而具有可挠曲显示的天然优势。但是，目前OLED产业仍然具有很高的技术门槛，制程难度大、良率低、成本高、售价高，这些难点都阻碍着OLED的广泛应用。液晶显示器(Liquid Crystal Display，LCD)相对而言具有较长的发展历程，已经逐步克服了色度稳定性、均匀性、可靠性、高色域、宽视角等关键技术，成为目前市面上仍然占据主流地位的显示技术。
但是在柔性液晶显示装置的实现过程中，采用柔性衬底替代传统的玻璃衬底并不意味着解决了所有的问题，一方面，由于液晶盒的厚度、背光模组的影响，使得液晶显示器的光线在厚度方向需要经过较长的路径，而弯曲过程造成的局部厚度变化会引起明显的光线传播方向改变与颜色串扰；另一方面，弯曲造成的局部应力使得传统液晶盒中的非承力膜层容易出现脆性断裂，导致功能异常，这一点对于导电层尤为突出。其中，导电层一般为透明导电层ITO，透明导电层ITO为一种脆性材料，在弯曲的过程中容易出现断裂现象。
发明内容
为了解决现有技术的不足，本发明提供一种液晶显示器，能够解决透明电极ITO容易在弯曲过程中出现脆性断裂而导致电气失常的问题，同时，能够提升整个液晶显示器的对比度。
本发明提出的具体技术方案为：提供一种显示模组，所述显示模组包括下偏光片、TFT阵列基板、液晶层、彩色滤光片、上偏光片，所述液晶层位于所 述下偏光片和所述上偏光片之间，所述TFT阵列基板位于所述下偏光片与所述液晶层之间，所述彩色滤光片位于所述液晶层与所述上偏光片之间，所述显示模组还包括设于所述彩色滤光片与所述液晶层之间的金属电极层，所述金属电极层包括介质层及金属线栅层，所述金属线栅层设于所述介质层朝向所述液晶层的一面。
可选地，所述彩色滤光片包括平坦层、滤光层及基板，所述滤光层位于所述平坦层与所述基板之间，所述平坦层位于所述滤光层与所述介质层之间，所述滤光层包括间隔设置于所述基板上的光阻以及设置于任意相邻的两个所述光阻之间的黑色矩阵。
可选地，所述金属线栅层与所述光阻对应的区域均设置有第一线栅单元，每一个所述第一线栅单元均包括平行等间隔排列的多个第一金属条，每一个所述第一线栅单元的偏振方向均与所述上偏光片的吸收轴的方向相同。
可选地，所述金属线栅层与所述黑色矩阵对应的区域设置有第二线栅单元，每一个所述第二线栅单元均包括平行等间隔排列的多个第二金属条。
可选地，所述第一金属条的宽度与所述第二金属条的宽度相等，和/或所述第一金属条与所述第二金属条的厚度均为10nm～100nm。
可选地，每一个所述第一线栅单元中相邻的两个第一金属条之间的间隔与每一个所述第二线栅单元中相邻的两个第二金属条之间的间隔不相等。
可选地，所述第一金属条与所述第二金属条的材质均选自Al、Ag或Au中的至少一种。
可选地，每一个所述第一线栅单元中相邻两个第一金属条之间的间隔均为20～500nm，每一个所述第一线栅单元的占空比均为0.1～0.9。
可选地，所述介质层的材质选自SiO2、SiO、MgO、Si3N4、TiO2、Ta2O5中的一种。
本发明还提供了一种液晶显示器，所述液晶显示器包括背光模组及如上所述的显示模组，所述显示模组设于所述背光模组上。
本发明提出的显示模组包括金属电极层，所述金属电极层包括介质层及金 属线栅层，所述金属线栅层设于所述介质层朝向所述液晶层的一面，将金属线栅层作为显示模组的公共电极层，从而取代了传统的透明电极ITO，避免透明电极ITO容易在弯曲过程中出现脆性断裂而导致电气失常的问题，同时，能够提升整个液晶显示器的对比度。
附图说明
图1为实施例1中液晶显示器的结构示意图；
图2为实施例1中金属线栅层的结构示意图；
图3为实施例2中液晶显示器的结构示意图；
图4为实施例2中金属线栅层的结构示意图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。在附图中，相同的标号将始终被用于表示相同的元件。
实施例1
参照图1，本实施例中的液晶显示器包括背光模组1和显示模组2。显示模组2包括下偏光片21、TFT阵列基板22、液晶层23、彩色滤光片24、上偏光片25，液晶层23位于下偏光片21和上偏光片25之间，TFT阵列基板22位于下偏光片21与液晶层23之间，彩色滤光片24位于液晶层23与上偏光片25之间。显示模组2还包括设于彩色滤光片24与液晶层23之间的金属电极层26，金属电极层26包括介质层261及金属线栅层262，金属线栅层262设于介质层261朝向液晶层23的一面。
金属线栅层262作为显示模组2的公共电极层，取代了现有的透明电极ITO，从而避免透明电极ITO容易在弯曲过程中出现脆性断裂而导致电气失常的问题。
本实施例中的彩色滤光片24包括平坦层241、滤光层242及基板243。滤光层242位于平坦层241与基板243之间，平坦层241位于滤光层242与介质层261之间，滤光层242包括间隔设置于基板243上的光阻242a以及设置于任意相邻的两个光阻242a之间的黑色矩阵242b。光阻242a包括红色光阻、绿色光阻、蓝色光阻，红色光阻能够透过红光，绿色光阻能够透过滤光，蓝色光阻能够透过蓝光。黑色矩阵242b不能让光线透过。
在滤光层242的实际制作工艺中，先在基板243的表面形成黑矩阵242b，然后在黑矩阵242b上形成多个像素开口区，最后在像素开口区填充光阻材料形成光阻242a，光阻242a的厚度大于黑色矩阵242b的厚度，从而在基板243的表面形成滤光层242。平坦层241形成于黑色矩阵242b和光阻242a的表面。
本实施例中的TFT阵列基板22和基板243均为柔性基板，柔性基板的材质选自聚甲基丙烯酸甲酯、聚碳酸酯、聚乙烯、聚丙烯、聚对苯二甲酸乙二醇酯或聚酰亚胺。
参照图2，金属线栅层262与光阻242a对应的区域均设置有第一线栅单元10，每一个第一线栅单元10均包括平行等间隔排列的多个第一金属条100，每一个第一线栅单元10的偏振方向均与上偏光片25的吸收轴的方向相同，能够透过偏振方向垂直于第一金属条100的TM偏振光、反射偏振方向平行于第一金属条100的TE偏振光，其作用类似于上偏光片25，从而可以进一步的增加液晶显示器的偏光度。此外，外界环境光线经过上偏振片25后形成偏振光，偏振光经过第一线栅单元10后全部透过，从而可以避免其他偏振方向的偏振光经过第一线栅单元10时被其反射，进而降低液晶显示器的对比度。同一种颜色的光阻242a对应的第一线栅单元10相同，不同颜色的光阻242a对应的第一线栅单元10可以相同也可以不同，图2中示出了不同颜色的光阻242a对应的第一线栅单元10均相同的情况。
本实施例中金属线栅层262与黑色矩阵242b对应的区域为整面结构，光线不能透过，可以进一步的增加金属线栅层262的可挠性。第一金属条100的宽度为10nm～100nm，第一金属条100的材质选自Al、Ag或Au中的至少一种。每一个第一线栅单元10中相邻两个第一金属条100之间的间隔均为20～500nm，每一个第一线栅单元10的占空比均为0.1～0.9。
本实施例中介质层261的材质选自SiO2、SiO、MgO、Si3N4、TiO2、Ta2O5中的一种。
本实施例中的背光模组1为侧入式的背光模组，其包括背光源11、导光板12及光学膜片组13。
背光源11设置在导光板12的侧面，其中，导光板12的入光面指的是导光板12朝向背光源11的一面。光学膜片组13位于导光板12和下偏光片21之间。背光源11发出的光入射至导光板12中并经导光板12多次反射后从导光板12的出光面出射，这里，导光板12的出光面指的是导光板12与光学膜片组13相对的一面。从导光板12的出光面出射的光再入射至光学膜片组13中。
光学膜片组13包括从下而上依次设置的下扩散片13a、增光片13b、上扩散片13c。上扩散片13c位于增光片13b和显示模组2之间，下扩散片13a位于增光片13b和导光板12之间。下扩散片13a用于将从导光板12的出光面发出的光集中起来均匀投射到增光片13b上，增光片13b用于将下扩散片13a发出的分散光进行聚集，以提高亮度，上扩散片13c用于对从增光片13b发出的光进行雾化，并将光均匀射出。这里增光片13b通常为棱镜片。
本实施例中的背光模组1还包括设于导光板12的底部的反射层14，反射层14可以是反射片也可以是涂覆于导光板12的底部的反射涂层。
实施例2
参照图3、图4，本实施例与实施例1的不同之处在于，本实施例中金属线栅层262与黑色矩阵242b对应的区域设置有第二线栅单元20，每一个第二线栅单元20均包括平行等间隔排列的多个第二金属条200。每一个第二线栅单元20的偏振方向均与上偏光片25的吸收轴的方向相同，能够透过偏振方向垂直于第二金属条200的TM偏振光、反射偏振方向平行于第二金属条200的TE偏振光，其作用类似于上偏光片25。从第二线栅单元20透过的偏振光被黑色矩阵242b遮挡。
本实施例中金属线栅层262与黑色矩阵242b对应的区域也为线栅结构，从而可以进一步的增加金属线栅层262的弯曲能力，提升液晶显示器的可靠性。第二金属条200的宽度与第一金属条100的宽度相等，即第二金属条200的宽度也为10nm～100nm，第二金属条200的材质选自Al、Ag或Au中的至少一种。每一 个第二线栅单元20中相邻两个第二金属条200之间的间隔均为20～500nm，每一个第二线栅单元20的占空比均为0.1～0.9。第二线栅单元20与第一线栅单元10电性连接，第二线栅单元20的结构可以与第一线栅单元10的结构相同也可以不同。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (20)

  1. 一种显示模组，其中，包括下偏光片、TFT阵列基板、液晶层、彩色滤光片、上偏光片，所述液晶层位于所述下偏光片和所述上偏光片之间，所述TFT阵列基板位于所述下偏光片与所述液晶层之间，所述彩色滤光片位于所述液晶层与所述上偏光片之间，所述显示模组还包括设于所述彩色滤光片与所述液晶层之间的金属电极层，所述金属电极层包括介质层及金属线栅层，所述金属线栅层设于所述介质层朝向所述液晶层的一面。
  2. 根据权利要求1所述的显示模组，其中，所述彩色滤光片包括平坦层、滤光层及基板，所述滤光层位于所述平坦层与所述基板之间，所述平坦层位于所述滤光层与所述介质层之间，所述滤光层包括间隔设置于所述基板上的光阻以及设置于任意相邻的两个所述光阻之间的黑色矩阵。
  3. 根据权利要求2所述的显示模组，其中，所述金属线栅层与所述光阻对应的区域均设置有第一线栅单元，每一个所述第一线栅单元均包括平行等间隔排列的多个第一金属条，每一个所述第一线栅单元的偏振方向均与所述上偏光片的吸收轴的方向相同。
  4. 根据权利要求3所述的显示模组，其中，所述金属线栅层与所述黑色矩阵对应的区域设置有第二线栅单元，每一个所述第二线栅单元均包括平行等间隔排列的多个第二金属条。
  5. 根据权利要求4所述的显示模组，其中，所述第一金属条的宽度与所述第二金属条的宽度相等，和/或所述第一金属条与所述第二金属条的厚度均为10nm～100nm。
  6. 根据权利要求4所述的显示模组，其中，每一个所述第一线栅单元中相邻的两个第一金属条之间的间隔与每一个所述第二线栅单元中相邻的两个第二金属条之间的间隔不相等。
  7. 根据权利要求4所述的显示模组，其中，所述第一金属条与所述第二金属条的材质均选自Al、Ag或Au中的至少一种。
  8. 根据权利要求3所述的显示模组，其中，每一个所述第一线栅单元中相邻两个第一金属条之间的间隔均为20～500nm，每一个所述第一线栅单元的占空比均为0.1～0.9。
  9. 根据权利要求1所述的显示模组，其中，所述介质层的材质选自SiO2、SiO、MgO、Si3N4、TiO2、Ta2O5中的一种。
  10. 根据权利要求2所述的显示模组，其中，所述介质层的材质选自SiO2、SiO、MgO、Si3N4、TiO2、Ta2O5中的一种。
  11. 根据权利要求3所述的显示模组，其中，所述介质层的材质选自SiO2、SiO、MgO、Si3N4、TiO2、Ta2O5中的一种。
  12. 根据权利要求4所述的显示模组，其中，所述介质层的材质选自SiO2、SiO、MgO、Si3N4、TiO2、Ta2O5中的一种。
  13. 一种液晶显示器，其中，包括背光模组及显示模组，所述显示模组设于所述背光模组上，所述显示模组包括下偏光片、TFT阵列基板、液晶层、彩色滤光片、上偏光片，所述液晶层位于所述下偏光片和所述上偏光片之间，所述TFT阵列基板位于所述下偏光片与所述液晶层之间，所述彩色滤光片位于所述液晶层与所述上偏光片之间，所述显示模组还包括设于所述彩色滤光片与所述液晶层之间的金属电极层，所述金属电极层包括介质层及金属线栅层，所述金属线栅层设于所述介质层朝向所述液晶层的一面。
  14. 根据权利要求13所述的液晶显示器，其中，所述彩色滤光片包括平坦层、滤光层及基板，所述滤光层位于所述平坦层与所述基板之间，所述平坦层位于所述滤光层与所述介质层之间，所述滤光层包括间隔设置于所述基板上的光阻以及设置于任意相邻的两个所述光阻之间的黑色矩阵。
  15. 根据权利要求14所述的液晶显示器，其中，所述金属线栅层与所述光阻对应的区域均设置有第一线栅单元，每一个所述第一线栅单元均包括平行等间隔排列的多个第一金属条，每一个所述第一线栅单元的偏振方向均与所述上偏光片的吸收轴的方向相同。
  16. 根据权利要求15所述的液晶显示器，其中，所述金属线栅层与所述黑色矩阵对应的区域设置有第二线栅单元，每一个所述第二线栅单元均包括平行等间隔排列的多个第二金属条。
  17. 根据权利要求16所述的液晶显示器，其中，所述第一金属条的宽度与所述第二金属条的宽度相等，和/或所述第一金属条与所述第二金属条的厚度均为10nm～100nm。
  18. 根据权利要求16所述的液晶显示器，其中，每一个所述第一线栅单元中相邻的两个第一金属条之间的间隔与每一个所述第二线栅单元中相邻的两个第二金属条之间的间隔不相等。
  19. 根据权利要求16所述的液晶显示器，其中，所述第一金属条与所述第二金属条的材质均选自Al、Ag或Au中的至少一种。
  20. 根据权利要求15所述的液晶显示器，其中，每一个所述第一线栅单元中相邻两个第一金属条之间的间隔均为20～500nm，每一个所述第一线栅单元的占空比均为0.1～0.9。
PCT/CN2017/110924 2017-10-31 2017-11-14 液晶显示器及其显示模组 WO2019085020A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/736,174 US10656457B2 (en) 2017-10-31 2017-11-14 Liquid crystal display and display module thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711042966.1A CN107664881B (zh) 2017-10-31 2017-10-31 液晶显示器及其显示模组
CN201711042966.1 2017-10-31

Publications (1)

Publication Number Publication Date
WO2019085020A1 true WO2019085020A1 (zh) 2019-05-09

Family

ID=61144803

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/110924 WO2019085020A1 (zh) 2017-10-31 2017-11-14 液晶显示器及其显示模组

Country Status (3)

Country Link
US (1) US10656457B2 (zh)
CN (1) CN107664881B (zh)
WO (1) WO2019085020A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108803124B (zh) * 2018-06-27 2021-05-28 武汉华星光电技术有限公司 曲面液晶显示屏及其制造方法
CN109239966A (zh) 2018-10-12 2019-01-18 京东方科技集团股份有限公司 显示基板、显示面板、显示装置及显示基板的制造方法
CN111176012A (zh) * 2020-02-19 2020-05-19 武汉华星光电技术有限公司 曲面显示面板及其制备方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080037094A1 (en) * 2006-08-10 2008-02-14 Samsung Sdi Co. Ltd. Polarizer and flat panel display apparatus including the same
US20160077265A1 (en) * 2012-07-26 2016-03-17 Samsung Display Co., Ltd. Polarizer, method of manufacturing the polarizer, display panel having the polarizer and display apparatus having the display panel
CN106125185A (zh) * 2016-08-29 2016-11-16 武汉华星光电技术有限公司 显示屏及其偏光片
CN106405927A (zh) * 2016-11-28 2017-02-15 深圳市华星光电技术有限公司 液晶显示装置
US20170097543A1 (en) * 2015-10-05 2017-04-06 Samsung Display Co., Ltd. Thin film transistor substrate, display device including the same, and method of manufacturing thin film transistor substrate
CN106597762A (zh) * 2016-10-28 2017-04-26 深圳市华星光电技术有限公司 线栅偏光电极及其压印模具和制作方法、显示基板
CN106773405A (zh) * 2016-12-29 2017-05-31 武汉华星光电技术有限公司 阵列基板及液晶显示器
CN107203065A (zh) * 2017-07-21 2017-09-26 京东方科技集团股份有限公司 彩膜基板、显示面板及装置
CN107229158A (zh) * 2016-03-24 2017-10-03 三星显示有限公司 液晶显示装置
CN107272249A (zh) * 2016-04-04 2017-10-20 三星显示有限公司 显示装置
CN107290895A (zh) * 2017-08-15 2017-10-24 深圳市华星光电技术有限公司 金属线栅，柔性液晶显示面板及其制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5255926B2 (ja) * 2008-07-02 2013-08-07 株式会社ジャパンディスプレイウェスト 液晶表示装置およびその製造方法
WO2011065054A1 (ja) * 2009-11-26 2011-06-03 シャープ株式会社 液晶表示パネル、液晶表示パネルの製造方法および液晶表示装置
US20120057106A1 (en) * 2010-09-07 2012-03-08 Electronics And Telecommunications Research Institute Polarizer and liquid crystal display
KR101755601B1 (ko) * 2010-11-04 2017-07-10 삼성디스플레이 주식회사 터치 스크린 패널 일체형 액정표시장치
CN102540306B (zh) * 2010-12-31 2015-03-25 北京京东方光电科技有限公司 光栅片、液晶显示装置及光栅片、液晶面板的制造方法
US20140152922A1 (en) * 2012-12-05 2014-06-05 Samsung Display Co., Ltd. Liquid crystal display and method of manufacturing the same
WO2015199948A1 (en) * 2014-06-25 2015-12-30 Moxtek, Inc. Wire grid polarizer with dual absorptive regions
KR20160072379A (ko) * 2014-12-12 2016-06-23 삼성디스플레이 주식회사 표시 기판, 표시 패널 및 편광 소자의 제조 방법
CN104503165B (zh) * 2014-12-30 2017-05-24 京东方科技集团股份有限公司 一种显示面板及显示装置
KR102348687B1 (ko) * 2015-07-16 2022-01-07 삼성디스플레이 주식회사 표시 장치
CN105739168A (zh) * 2016-05-06 2016-07-06 京东方科技集团股份有限公司 一种tft基板及其制备方法及液晶显示面板
CN106019673B (zh) * 2016-07-27 2020-03-31 武汉华星光电技术有限公司 一种液晶显示面板用基板及液晶显示面板
CN106125179B (zh) * 2016-08-29 2019-02-26 武汉华星光电技术有限公司 显示装置及其滤光片
KR102334941B1 (ko) * 2017-05-18 2021-12-02 엘지디스플레이 주식회사 터치표시장치 및 그 제조방법

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080037094A1 (en) * 2006-08-10 2008-02-14 Samsung Sdi Co. Ltd. Polarizer and flat panel display apparatus including the same
US20160077265A1 (en) * 2012-07-26 2016-03-17 Samsung Display Co., Ltd. Polarizer, method of manufacturing the polarizer, display panel having the polarizer and display apparatus having the display panel
US20170097543A1 (en) * 2015-10-05 2017-04-06 Samsung Display Co., Ltd. Thin film transistor substrate, display device including the same, and method of manufacturing thin film transistor substrate
CN107229158A (zh) * 2016-03-24 2017-10-03 三星显示有限公司 液晶显示装置
CN107272249A (zh) * 2016-04-04 2017-10-20 三星显示有限公司 显示装置
CN106125185A (zh) * 2016-08-29 2016-11-16 武汉华星光电技术有限公司 显示屏及其偏光片
CN106597762A (zh) * 2016-10-28 2017-04-26 深圳市华星光电技术有限公司 线栅偏光电极及其压印模具和制作方法、显示基板
CN106405927A (zh) * 2016-11-28 2017-02-15 深圳市华星光电技术有限公司 液晶显示装置
CN106773405A (zh) * 2016-12-29 2017-05-31 武汉华星光电技术有限公司 阵列基板及液晶显示器
CN107203065A (zh) * 2017-07-21 2017-09-26 京东方科技集团股份有限公司 彩膜基板、显示面板及装置
CN107290895A (zh) * 2017-08-15 2017-10-24 深圳市华星光电技术有限公司 金属线栅，柔性液晶显示面板及其制作方法

Also Published As

Publication number Publication date
CN107664881B (zh) 2020-07-24
CN107664881A (zh) 2018-02-06
US10656457B2 (en) 2020-05-19
US20200041838A1 (en) 2020-02-06

Similar Documents

Publication Publication Date Title
US10288929B2 (en) Display panels and liquid crystal display devices
CN107272249B (zh) 显示装置
CN104181724B (zh) 液晶显示器
KR102554120B1 (ko) 액정 표시 장치
KR101804080B1 (ko) 내로우 베젤 액정 디스플레이의 팬아웃 영역 구조
TW201234085A (en) Display panel
KR102503756B1 (ko) 표시 장치 및 그 제조 방법
WO2019085020A1 (zh) 液晶显示器及其显示模组
US20210080777A1 (en) Liquid crystal panel and manufacturing for the same
KR20120075877A (ko) 액정 디스플레이 패널 및 이를 포함하는 장치
US10969634B2 (en) Liquid crystal display panel, liquid crystal display device and method of controlling gray scale of liquid crystal display device
KR100459647B1 (ko) 디스플레이장치
CN109471286A (zh) 显示面板及电子装置
CN107102487B (zh) 阵列基板及其制作方法、反射式液晶显示装置
CN109698223B (zh) 一种显示面板及显示装置
WO2020168560A1 (zh) 阵列基板以及显示装置
KR100947182B1 (ko) 코팅형 광학 필름, 그 제조방법 및 이를 이용한액정표시장치
JP2000241809A (ja) 反射型液晶表示装置
US20170139111A1 (en) Liquid crystal display device
US9252162B2 (en) Active matrix substrate
TWI760014B (zh) 顯示面板
JPH05173122A (ja) 反射型カラー液晶表示装置
KR20010047591A (ko) 박막트랜지스터 액정표시장치
WO2021102920A1 (zh) 显示装置及其制作方法
KR101117977B1 (ko) 반사투과형 액정표시장치의 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17930241

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17930241

Country of ref document: EP

Kind code of ref document: A1