WO2019082303A1 - Dispositif d'affichage et son procédé de fabrication - Google Patents

Dispositif d'affichage et son procédé de fabrication

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Publication number
WO2019082303A1
WO2019082303A1 PCT/JP2017/038534 JP2017038534W WO2019082303A1 WO 2019082303 A1 WO2019082303 A1 WO 2019082303A1 JP 2017038534 W JP2017038534 W JP 2017038534W WO 2019082303 A1 WO2019082303 A1 WO 2019082303A1
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WO
WIPO (PCT)
Prior art keywords
film
display device
organic
region
inorganic film
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Application number
PCT/JP2017/038534
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English (en)
Japanese (ja)
Inventor
純平 高橋
通 園田
恵信 宮本
Original Assignee
シャープ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to PCT/JP2017/038534 priority Critical patent/WO2019082303A1/fr
Publication of WO2019082303A1 publication Critical patent/WO2019082303A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Definitions

  • the present invention relates to a display device and a method of manufacturing the same.
  • Patent Document 1 has a laminated structure in which an inorganic film layer formed by a CVD (chemical vapor deposition) method or the like and an organic film layer formed by an inkjet method or the like are alternately arranged, Disclosed is a display device provided with a thin film sealing layer covering an element.
  • CVD chemical vapor deposition
  • a convex blocking wall may be provided in the frame area around the display area so as to surround the organic EL element constituting the display area. If this happens, the width of the frame area widens, making it difficult to narrow the frame of the display device.
  • the present invention has been made in view of the above-mentioned point, and an object of the present invention is to form an end portion of an organic film constituting a sealing film with high accuracy and to narrow a frame.
  • a display device in a display region for displaying an image, a base substrate having a frame region defined around the display region, and the display region of the base substrate. And a sealing film provided in the display area and the frame area so as to cover the light emitting element, and in which a first inorganic film, an organic film, and a second inorganic film are sequentially stacked.
  • a high wettability region having relatively high wettability to the droplets to be the organic film is provided on the surface on the organic film side of the first inorganic film in the display region, and the frame region
  • a low wettability region having relatively low wettability to the liquid droplet is provided on the surface of the first inorganic film on the organic film side in the above.
  • a droplet to be the organic film is formed on the surface on the organic film side of the first inorganic film in the display area.
  • a high wettability region having a relatively high wettability to the surface is provided, and the surface on the organic film side of the first inorganic film in the frame region has a low wettability having a relatively low wettability to droplets. Since the property region is provided, the end portion of the organic film constituting the sealing film can be formed with high accuracy, and the frame can be narrowed.
  • FIG. 1 is a plan view showing a schematic configuration of an organic EL display device according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing the detailed configuration of the display area of the organic EL display taken along line II-II in FIG.
  • FIG. 3 is a cross-sectional view showing an organic EL layer constituting the organic EL display device according to the first embodiment of the present invention.
  • FIG. 4 is a cross-sectional view showing a detailed configuration of the organic EL display taken along the line IV-IV in FIG.
  • FIG. 5 is a cross-sectional view showing the detailed configuration of the organic EL display taken along the line VV in FIG. FIG.
  • FIG. 6 is a plan view in the frame area of the first inorganic film of the sealing film constituting the organic EL display device according to the first embodiment of the present invention.
  • FIG. 7 is a plan view of the first inorganic film of the sealing film constituting the organic EL display device according to the first embodiment of the present invention in a non-display area.
  • FIG. 8 is a cross-sectional view showing a droplet to be an organic film of a sealing film constituting the organic EL display device according to the first embodiment of the present invention.
  • FIG. 9 is a perspective view showing the method of manufacturing the organic EL display device according to the first embodiment of the present invention.
  • FIG. 10 is a plan view showing a first inorganic film of a sealing film constituting the organic EL display device according to the first embodiment of the present invention.
  • FIG. 11 is a plan view showing a modification of the first inorganic film of the sealing film constituting the organic EL display device according to the first embodiment of the present invention.
  • FIG. 12 is a plan view showing a schematic configuration of an organic EL display device according to a second embodiment of the present invention.
  • FIG. 13 is a cross-sectional view showing a detailed configuration of the organic EL display taken along line XIII-XIII in FIG.
  • FIG. 14 is a plan view showing a first inorganic film of a sealing film constituting the organic EL display device according to the second embodiment of the present invention.
  • FIG. 15 is a plan view showing a modification of the first inorganic film of the sealing film constituting the organic EL display device according to the second embodiment of the present invention.
  • First Embodiment 1 to 11 show a first embodiment of a display device and a method of manufacturing the same according to the present invention.
  • an organic EL display device provided with an organic EL element is illustrated as a display device provided with a light emitting element.
  • FIG. 1 is a plan view showing a schematic configuration of the organic EL display device 30a of the present embodiment.
  • FIG. 2 is a cross-sectional view showing the detailed configuration of the display area D of the organic EL display device 30a, taken along the line II-II in FIG.
  • FIG. 3 is a cross-sectional view showing the organic EL layer 16 constituting the organic EL display device 30a.
  • FIG. 4 and 5 are cross-sectional views showing the detailed configuration of the organic EL display device 30a, taken along the line IV-IV and the line V-V in FIG.
  • FIG. 6 is a plan view of the frame region F of the first inorganic film 19a of the sealing film 22a of the organic EL display device 30a.
  • FIG. 7 is a plan view of the non-display area Na of the first inorganic film 19a of the sealing film 22a constituting the organic EL display device 30a.
  • FIG. 8 is a cross-sectional view showing the droplet L to be the organic film 20 of the sealing film 22a constituting the organic EL display device 30a, where (a) shows the droplet L on the high wettability region Rad.
  • FIG. 6B shows the droplet L on the low wettability region Rbf.
  • FIG. 9 is a perspective view which shows the 1st inorganic film formation process in the sealing film formation process of the manufacturing method of the organic electroluminescence display 30a.
  • FIG. 10 is a plan view showing the first inorganic film 19a of the sealing film 22a constituting the organic EL display device 30a.
  • FIG. 11 is a plan view showing a first inorganic film 19b which is a modification of the first inorganic film 19a of the sealing film 22a constituting the organic EL display device 30a.
  • the organic EL display device 30 a is provided in a substantially rectangular shape in which each corner is chamfered in an R shape in plan view. Further, in the organic EL display device 30a, as shown in FIG. 1, a display area D for image display is defined in a substantially rectangular shape, and a frame area F is defined in a frame shape around the display area D. Here, each corner of the display area D is chamfered in an R shape as shown in FIG. Further, in the display area D, a plurality of pixels are arranged in a matrix.
  • each pixel of the display area D for example, a sub-pixel for performing red gradation display, a sub-pixel for performing green gradation display, and a sub-pixel for performing blue gradation display They are arranged side by side. Further, as shown in FIG. 1, for example, a non-display area Na in which a camera, a fingerprint sensor, and the like are disposed is provided in a circular island shape inside the display area D. Further, as shown in FIG. 1, a terminal portion T is provided on the left side of the frame area F in the drawing.
  • the organic EL display device 30 a includes a base substrate 10, an organic EL element 18 provided on the base substrate 10 as a light emitting element in the display region D via a base coat film 11, and an organic EL element 18. And a sealing film 22a provided in the display area D and the frame area F so as to cover the above.
  • the base substrate 10 is, for example, a plastic substrate made of polyimide resin or the like or a glass substrate.
  • the base coat film 11 is, for example, an inorganic insulating film such as a silicon oxide film or a silicon nitride film.
  • the organic EL element 18 includes a plurality of TFTs 12 sequentially provided on the base coat layer 11, a planarization film 13, a plurality of first electrodes 14, a partition 15, a plurality of organic EL layers 16 and a second An electrode 17 is provided.
  • the TFT 12 is a switching element provided for each sub-pixel of the display area D.
  • the TFT 12 may overlap with a semiconductor layer provided in an island shape on the base coat film 11, a gate insulating film provided so as to cover the semiconductor layer, and a part of the semiconductor layer on the gate insulating film. And an interlayer insulating film provided to cover the gate electrode, and a source electrode and a drain electrode provided on the interlayer insulating film and arranged to be separated from each other.
  • the top gate type TFT 12 is illustrated in this embodiment, the TFT 12 may be a bottom gate type TFT.
  • the planarizing film 13 is provided so as to planarize the surface shape of each TFT 12 by covering other than a part of the drain electrode of each TFT 12 as shown in FIG.
  • the planarization film 13 is made of, for example, a colorless and transparent organic resin material such as an acrylic resin.
  • the plurality of first electrodes 14 are provided in a matrix on the planarization film 13 so as to correspond to the plurality of sub-pixels.
  • the first electrode 14 is connected to the drain electrode of each TFT 12 through a contact hole formed in the planarization film 13.
  • the first electrode 14 has a function of injecting holes into the organic EL layer 16.
  • the first electrode 14 is more preferably formed of a material having a large work function in order to improve the hole injection efficiency into the organic EL layer 16.
  • the first electrode 14 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And metal materials such as lithium fluoride (LiF).
  • the material which comprises the 1st electrode 14 is magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxidation, for example Astatine (AtO 2 ), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), or lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc. It may be an alloy.
  • the material constituting the first electrode 14 is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO) or the like. It may be. Further, the first electrode 14 may be formed by laminating a plurality of layers made of the above materials. In addition, as a material with a large work function, indium tin oxide (ITO), indium zinc oxide (IZO), etc. are mentioned, for example.
  • the partition walls 15 are provided in a lattice shape so as to cover the peripheral portion of each first electrode 14.
  • a material forming the partition 15 for example, silicon nitride (SiN x (x is a positive number)) such as silicon oxide (SiO 2 ), trisilicon tetranitride (Si 3 N 4 ), silicon oxynitride Inorganic films such as (SiNO) or organic films such as polyimide resin, acrylic resin, polysiloxane resin, and novolac resin can be mentioned.
  • a blocking wall formed of the same material in the same layer as at least one of the planarizing film 13 and the partition 15 is frame-shaped so as to surround the organic EL element 18. It may be provided.
  • the plurality of organic EL layers 16 are disposed on the respective first electrodes 14 and provided in a matrix so as to correspond to the plurality of sub-pixels.
  • the organic EL layer 16 is provided with a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4 and an electron injection layer sequentially provided on the first electrode 14. It has five.
  • the hole injection layer 1 is also referred to as an anode buffer layer, and has the function of improving the hole injection efficiency from the first electrode 14 to the organic EL layer 16 by bringing the energy levels of the first electrode 14 and the organic EL layer 16 closer.
  • the material constituting the hole injection layer for example, triazole derivative, oxadiazole derivative, imidazole derivative, polyarylalkane derivative, pyrazoline derivative, phenylenediamine derivative, oxazole derivative, styrylanthracene derivative, fluorenone derivative, Hydrazone derivatives, stilbene derivatives and the like can be mentioned.
  • the hole transport layer 2 has a function of improving the transport efficiency of holes from the first electrode 14 to the organic EL layer 16.
  • a material constituting the hole transport layer 2 for example, porphyrin derivative, aromatic tertiary amine compound, styrylamine derivative, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivative, oxadiazole Derivative, imidazole derivative, polyarylalkane derivative, pyrazoline derivative, pyrazolone derivative, phenylenediamine derivative, arylamine derivative, amine-substituted chalcone derivative, oxazole derivative, styrylanthracene derivative, fluorenone derivative, hydrazone derivative, stilbene derivative, hydrogenated amorphous silicon, Hydrogenated amorphous silicon carbide, zinc sulfide, zinc selenide and the like can be mentioned.
  • the light emitting layer 3 holes and electrons are injected from the first electrode 14 and the second electrode 17, respectively, and holes and electrons are recombined when a voltage is applied by the first electrode 14 and the second electrode 17. It is an area.
  • the light emitting layer 3 is formed of a material having high light emission efficiency.
  • a metal oxinoid compound [8-hydroxy quinoline metal complex], a naphthalene derivative, an anthracene derivative, a diphenyl ethylene derivative, a vinylacetone derivative, a triphenylamine derivative, a butadiene derivative, a coumarin derivative, for example , Benzoxazole derivative, oxadiazole derivative, oxazole derivative, benzimidazole derivative, thiadiazole derivative, benzthiazole derivative, styryl derivative, styrylamine derivative, bisstyrylbenzene derivative, trisstyrylbenzene derivative, perylene derivative, perinone derivative, aminopyrene derivative, Pyridine derivatives, rhodamine derivatives, aquidin derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylene vinylet , Polysilane, and the like.
  • the electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3.
  • a material constituting the electron transport layer 4 for example, as an organic compound, oxadiazole derivative, triazole derivative, benzoquinone derivative, naphthoquinone derivative, anthraquinone derivative, tetracyanoanthraquinodimethane derivative, diphenoquinone derivative, fluorenone derivative And silole derivatives, metal oxinoid compounds and the like.
  • the electron injection layer 5 has a function of bringing the energy levels of the second electrode 17 and the organic EL layer 16 closer to each other and improving the efficiency of injecting electrons from the second electrode 17 to the organic EL layer 16.
  • the drive voltage of the organic EL element 18 can be reduced.
  • the electron injection layer 5 is also called a cathode buffer layer.
  • a material constituting the electron injection layer 5 for example, lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), barium fluoride Inorganic alkali compounds such as (BaF 2 ), aluminum oxide (Al 2 O 3 ), strontium oxide (SrO) and the like can be mentioned.
  • the second electrode 17 is provided so as to cover the organic EL layers 16 and the partition walls 15 and to be common to a plurality of sub-pixels.
  • the second electrode 17 has a function of injecting electrons into the organic EL layer 16.
  • the second electrode 17 is more preferably made of a material having a small work function in order to improve the electron injection efficiency into the organic EL layer 16.
  • the second electrode 17 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And lithium fluoride (LiF).
  • the second electrode 17 may be, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxide astatine (AtO 2) And lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc. May be
  • the second electrode 17 may be formed of, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), etc. .
  • the second electrode 17 may be formed by laminating a plurality of layers made of the above materials.
  • a material having a small work function for example, magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al) Etc.
  • the same material as the source electrode and the drain electrode of the TFT 12 is formed of the same material so as to surround the organic EL element 18, A wire 12 a connected to the second electrode 17 is provided.
  • the sealing film 22a is, as shown in FIGS. 2, 4 and 5, a first inorganic film 19a provided so as to cover the organic EL element 18, and an organic film 20 provided on the first inorganic film 19a. And a second inorganic film 21 provided to cover the organic film 20.
  • the first inorganic film 19a is made of, for example, an inorganic insulating film such as a silicon nitride film.
  • an inorganic insulating film such as a silicon nitride film.
  • a high wettability region Rad having a contact angle ⁇ of less than 10 ° (see FIG. 8A) is provided.
  • the surface of the first inorganic film 19a on the organic film 20 side in the frame region F has relatively low wettability (for example, contact angle) to the droplets L to be the organic film 20 as shown in FIG.
  • the width of the frame region F is, for example, about 1 mm
  • the diameter of the high wettability region Raf is, for example, about 20 ⁇ m
  • the density of the high wettability region Raf is about 750000 pieces / cm 2.
  • the high wettability region Ran having relatively high wettability to the droplets L to be the organic film 20 has low wettability. It is provided along the periphery of the region Rbn, that is, along the boundary with the display region D in a point shape.
  • the diameter of the non-display area Na is, for example, about 10 mm
  • the diameter of the high-wettability area Ran is, for example, about 20 ⁇ m
  • the density of the high-wettability area Ran is about 750,000 pieces / cm 2 . is there.
  • the high wettability region Raf may have a polygonal shape such as a triangle or a square in plan view.
  • the organic film is formed by arranging the apex of the triangle on the display region D side and arranging the base of the triangle on the opposite side to the display region D.
  • the damming effect of the organic resin material constituting 20 may be improved.
  • the contact angle which is an index representing the wettability, is measured according to the static drop method described in JIS R 3257: 1999, but for the measurement of the contact angle in this embodiment, CVD instead of the glass substrate is used.
  • a vapor deposition substrate is used, and an ink material is used instead of water.
  • the organic film 20 is made of, for example, an organic resin material such as acrylate, epoxy, silicone, polyurea, parylene, polyimide, or polyamide.
  • the second inorganic film 21 is made of, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film.
  • the organic EL display device 30a described above has flexibility, and is configured to perform image display by appropriately emitting light from the light emitting layer 3 of the organic EL layer 16 through the TFT 12 in each sub-pixel. .
  • the method of manufacturing the organic EL display device 30a of the present embodiment includes an organic EL element forming step (a light emitting element forming step) and a sealing film forming step.
  • the first inorganic film 19a partially shown in FIGS. 6 and 7 is entirely shown, but the high wettability regions Raf and Ran formed on the surface of the first inorganic film 19a are shown.
  • the number and arrangement are simplified, and in FIG. 9, the number and arrangement of the openings of the mask M for forming the high wettability regions Rad, Raf and Ran are simplified in accordance with FIG.
  • Organic EL element formation process For example, on the surface of the base substrate 10 made of polyimide resin, the base coat film 11 and the organic EL element 18 (TFT 12, planarizing film 13, first electrode 14, partition 15, organic EL layer 16 (positive The hole injection layer 1, the hole transport layer 2, the light emitting layer 3, the electron transport layer 4, the electron injection layer 5), and the second electrode 17) are formed.
  • an inorganic insulating film 19 such as a silicon nitride film is formed to a thickness of about several tens of nm to several ⁇ m by plasma CVD to cover the organic EL element 18 formed in the organic EL element formation step.
  • the surface of the inorganic insulating film 19 is irradiated with ultraviolet rays U through the mask M to have high wettability regions Rad, Raf and Ran, and low wettability regions Rbf and Rbn.
  • the first inorganic film 19a is formed (first inorganic film forming step).
  • the mask M is formed, for example, by bonding an aluminum foil having a light shielding property to the surface of a glass substrate.
  • the mask M is provided with a first opening Ad, a second opening Af and a third opening An so as to be superimposed on the high wettability regions Rad, Raf and Ran, respectively. .
  • the dot-like second opening Af and the third opening An are formed to be concentrated at the boundary with the display area D.
  • an organic resin material such as acrylate is discharged by an inkjet method to a thickness of several ⁇ m to several 10 ⁇ m to the high wettability region Rad of the substrate on which the first inorganic film 19a is formed.
  • the film 20 is formed (organic film formation step).
  • the low wettability region Rbf is provided around the high wettability region Rad, so the frame region F of the droplet L of the organic resin material forming the organic film 20 is provided. Flow can be suppressed.
  • the high wettability region Raf is provided in a point shape in the low wettability region Rbf, droplets L of the organic resin material constituting the organic film 20 by the pinning effect. Flow into the frame region F can be further suppressed.
  • the low wettability region Rbn is provided in the non-display area Na, so that the flow of the droplets L of the organic resin material constituting the organic film 20 into the non-display area Na is suppressed. be able to.
  • the organic resin constituting the organic film 20 is formed by the pinning effect.
  • the flow of material droplets L into the non-display area Na can be further suppressed.
  • an inorganic insulating film such as a silicon nitride film is deposited by plasma CVD to a thickness of about several tens of nm to several ⁇ m, and the second inorganic film 21 is formed.
  • the sealing film 22a which consists of the 1st inorganic film 19a, the organic film 20, and the 2nd inorganic film 21 is formed (2nd inorganic film formation process).
  • the organic EL display device 30a of the present embodiment can be manufactured.
  • the method of forming the first inorganic film 19a having the high wettability regions Rad, Raf, and Ran by irradiating the surface of the inorganic film such as the silicon nitride film with ultraviolet light U has been exemplified.
  • Another inorganic film such as a silicon oxide film may be formed on the surface of an inorganic film such as a silicon nitride film to form the first inorganic film 19 b. Specifically, as shown in FIG.
  • an inorganic insulating film such as a silicon nitride film is formed by plasma CVD over the entire surface of the substrate on which the organic EL element 18 is formed in the organic EL element formation step.
  • Inorganic film 19ba (low wettability region Rbf) is formed.
  • an inorganic insulating film such as a silicon oxide film is formed on the surface of the substrate on which the inorganic film 19ba is formed by plasma CVD using a mask to form inorganic film 19bbd (high wettability region Rad) and inorganic film 19bbf (high wettability region Rad).
  • the high wettability region Raf is formed.
  • an inorganic insulating film such as a silicon nitride film is formed on the surface of the substrate on which the inorganic films 19bbd and 19bbf are formed by plasma CVD using a mask to form an inorganic film 19bc (low wettability region Rbn). Further, an inorganic insulating film such as a silicon oxide film is formed on the surface of the substrate on which the inorganic film 19bc is formed by plasma CVD using a mask to form an inorganic film 19bd (high wettability region Ran). In this manner, the first inorganic film 19b may be formed with the inorganic films 19ba, 19bbd, 19bbf, 19bc and 19bd.
  • the organic EL display device 30a of the present embodiment and the method for manufacturing the same display is performed on the sealing film 22a in which the first inorganic film 19a, the organic film 20, and the second inorganic film 21 are sequentially stacked.
  • a high wettability region Rad having relatively high wettability to the droplets L to be the organic film 20 is provided.
  • a low wettability region Rbf having relatively low wettability to the droplet L is provided on the surface of the first inorganic film 19a on the organic film 20 side.
  • the low wettability region Rbf is provided around the high wettability region Rad, so the organic resin forming the organic film 20 in the organic film formation step of the sealing film formation step
  • the flow of the droplet L of the material into the frame area F can be suppressed. Therefore, the end of the organic film 20 forming the sealing film 22a can be formed with high accuracy, and the frame can be narrowed in the organic EL display device 30a.
  • the high wettability region Raf is provided in a dotted shape in the low wettability region Rbf in the first inorganic film 19a.
  • the flow of the droplets L of the organic resin material constituting the organic film 20 into the frame region F can be further suppressed by the pinning effect.
  • the non-display area Na is provided in an island shape in the display area D, and the first inorganic film 19a in the island non-display area Na is provided.
  • the low wettability region Rbn is provided on the surface on the organic film 20 side.
  • the low wettability region Rbn is provided in the non-display region Na on the surface of the first inorganic film 19a. Therefore, in the organic film formation step of the sealing film formation step, the organic resin material constituting the organic film 20 The flow of the liquid droplets L into the non-display area Na can be suppressed.
  • the organic EL display device 30a of the present embodiment and the method of manufacturing the same in the first inorganic film 19a, the high wettability region Ran is provided in a dotted manner in the low wettability region Rbn of the non-display region Na. Therefore, the flow of the droplets L of the organic resin material constituting the organic film 20 into the non-display area Na can be further suppressed by the pinning effect.
  • the high wettability regions Rad, Raf and Ran have high wettability simply by irradiating the surface of the inorganic insulating film 19 to be the first inorganic film 19a with ultraviolet rays U. Since it is formed, the end portion of the organic film 20 constituting the sealing film 22a can be accurately formed at low manufacturing cost, and the frame can be narrowed of the organic EL display device 30a.
  • FIG. 12 is a plan view showing a schematic configuration of the organic EL display device 30b of the present embodiment.
  • FIG. 13 is a cross-sectional view showing the detailed configuration of the organic EL display device 30b, taken along line XIII-XIII in FIG.
  • FIG. 14 is a plan view showing the first inorganic film 19c of the sealing film 22b which constitutes the organic EL display device 30b.
  • FIG. 15 is a plan view showing a first inorganic film 19d which is a modification of the first inorganic film 19c of the sealing film 22b constituting the organic EL display device 30b.
  • the same parts as those in FIGS. 1 to 11 are denoted by the same reference numerals, and detailed descriptions thereof will be omitted.
  • the organic EL display device 30a in which the non-display area Na is provided inside the display area D is exemplified.
  • the non-display area Nb is not in the notch portion of the display area D.
  • the organic EL display device 30b provided is illustrated.
  • the organic EL display device 30b is provided in a substantially rectangular shape in which each corner is chamfered in an R shape in a plan view. Further, in the organic EL display device 30b, as shown in FIG. 12, a display area D for image display is defined in a substantially rectangular shape, and a frame area F is defined in a frame shape around the display area D.
  • the display area D is provided in a shape in which a part of the peripheral edge is cut in a semicircular shape, and a camera or a fingerprint is formed in the semicircular cut portion, for example.
  • a non-display area Nb in which a sensor or the like is arranged is provided adjacent to the frame area F.
  • the organic EL display device 30 b includes a base substrate 10, an organic EL element 18 provided on the base substrate 10 as a light emitting element in the display region D via the base coat film 11, and an organic EL element 18. And a sealing film 22 b provided in the display area D, the non-display area Nb, and the frame area F so as to cover the display area D.
  • the sealing film 22 b includes a first inorganic film 19 c provided so as to cover the organic EL element 18, an organic film 20 provided on the first inorganic film 19 c, and an organic film 20. And a second inorganic film 21 provided so as to cover it.
  • the first inorganic film 19c is made of, for example, an inorganic insulating film such as a silicon nitride film.
  • an inorganic insulating film such as a silicon nitride film.
  • a high wettability region Rad having is provided on the surface of the first inorganic film 19c on the organic film 20 side in the display region D.
  • the surface of the first inorganic film 19c on the organic film 20 side in the frame region F has relatively low wettability to the droplets L to be the organic film 20 as shown in FIGS. 13 and 14.
  • a low wettability region Rbf is provided. Then, in the low wettability region Rbf of the frame region F, as shown in FIG.
  • high wettability regions Raf having relatively high wettability to the droplets L to be the organic film 20 are provided in a dotted manner. It is done.
  • a low wettability region Rbn having low wettability on the surface of the first inorganic film 19c on the organic film 20 side in the non-display area Nb of the notched portion of the display area D, as shown in FIG.
  • a low wettability region Rbn having low wettability on the surface of the first inorganic film 19c on the organic film 20 side in the non-display area Nb of the notched portion of the display area D.
  • a low wettability region Rbn having low wettability.
  • the high wettability region Ran having relatively high wettability to the droplets L to be the organic film 20 has low wettability. It is provided along the periphery of the region Rbn, that is, along the boundary with the display region D in a point shape.
  • the organic EL display device 30b described above has flexibility, and is configured to perform image display by appropriately emitting light from the light emitting layer 3 of the organic EL layer 16 through the TFT 12 in each sub-pixel. .
  • the organic EL display device 30b changes the region irradiated with the ultraviolet light U, for example, to reduce the low wettability region of the non-display region Nb. It can be manufactured by arranging Rbn and the high wettability region Ran.
  • the method of forming the first inorganic film 19c having the high wettability regions Rad, Raf, and Ran by irradiating the surface of the inorganic film such as the silicon nitride film with the ultraviolet light U is illustrated.
  • Another inorganic film such as a silicon oxide film may be formed on the surface of an inorganic film such as a silicon nitride film to form the first inorganic film 19 d.
  • an inorganic insulating film such as a silicon nitride film is formed by plasma CVD over the entire surface of the substrate on which the organic EL element 18 is formed in the organic EL element forming step.
  • the inorganic film 19da (low wettability regions Rbf and Rbn) are formed.
  • an inorganic insulating film such as a silicon oxide film or the like is formed on the substrate surface on which the inorganic film 19da is formed by plasma CVD using a mask to form an inorganic film 19dbd (high wettability region Rad), inorganic film 19dbf (high The wettability region Raf) and the inorganic film 19 dbn (high wettability region Ran) are formed.
  • the first inorganic film 19d provided with the inorganic films 19da, 19dbd, 19dbf and 19bbn may be formed.
  • the organic EL display device 30b of the present embodiment and the method of manufacturing the same display is performed on the sealing film 22b in which the first inorganic film 19c, the organic film 20, and the second inorganic film 21 are sequentially stacked.
  • a high wettability region Rad having relatively high wettability to the droplets L to be the organic film 20 is provided.
  • a low wettability region Rbf having relatively low wettability to the droplet L is provided on the surface of the first inorganic film 19c on the organic film 20 side.
  • the low wettability region Rbf is provided around the high wettability region Rad, so the organic resin forming the organic film 20 in the organic film formation step of the sealing film formation step
  • the flow of the droplet L of the material into the frame area F can be suppressed. Therefore, the end of the organic film 20 forming the sealing film 22b can be formed with high accuracy, and the frame can be narrowed in the organic EL display device 30b.
  • the high wettability region Raf is provided in a point shape in the low wettability region Rbf in the first inorganic film 19c.
  • the flow of the droplets L of the organic resin material constituting the organic film 20 into the frame region F can be further suppressed by the pinning effect.
  • the non-display area Nb is provided in the notched portion of the display area D, and the organic film 20 side of the first inorganic film 19c in the non-display area Nb.
  • the low wettability region Rbn is provided on the surface of.
  • the low wettability region Rbn is provided in the non-display region Nb on the surface of the first inorganic film 19c, so that the organic resin material constituting the organic film 20 in the organic film formation step of the sealing film formation step.
  • the flow of the liquid droplet L into the non-display area Nb can be suppressed.
  • the high wettability region Ran is provided in a dotted shape in the low wettability region Rbn of the non-display region Nb. Therefore, the flow of the droplets L of the organic resin material constituting the organic film 20 into the non-display area Nb can be further suppressed by the pinning effect.
  • the high wettability regions Rad, Raf and Ran have high wettability only by irradiating the surface of the inorganic insulating film 19 to be the first inorganic film 19c with ultraviolet rays U. Since it is formed, the end portion of the organic film 20 constituting the sealing film 22b can be accurately formed at low manufacturing cost, and the frame can be narrowed of the organic EL display device 30b.
  • the organic EL display device 30a in which the non-display area Na is provided inside the display area D is exemplified, and in the second embodiment, the non-display area is not provided in the notched portion of the display area D.
  • the organic EL display device 30b provided with Nb is illustrated, the present invention can also be applied to an organic EL display device provided with non-display regions Na and Nb in the display region D and notches. .
  • the present invention is a display device provided with a plurality of light emitting elements driven by current, for example, a light emitting element using a quantum dot containing layer
  • the present invention can be applied to a display device provided with a QLED (Quantum-dot light emitting diode).
  • the organic EL layer having a five-layer laminated structure of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer is exemplified. It may be a three-layer laminated structure of a hole injection layer and hole transport layer, a light emitting layer, and an electron transport layer and electron injection layer.
  • the organic EL display device is exemplified in which the first electrode is an anode and the second electrode is a cathode.
  • the laminated structure of the organic EL layer is reversed and the first electrode is a cathode.
  • the present invention can also be applied to an organic EL display device in which the second electrode is an anode.
  • the organic EL display device in which the electrode of the TFT connected to the first electrode is the drain electrode is exemplified.
  • the electrode of the TFT connected to the first electrode is the source electrode
  • the present invention can also be applied to an organic EL display device to be called.
  • the present invention is useful for flexible display devices.

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  • General Physics & Mathematics (AREA)
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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

Selon la présente invention, dans un film d'étanchéité sur lequel un premier film inorganique (19a), un film organique et un second film inorganique sont stratifiés dans cet ordre, une région de mouillabilité élevée (Rad) ayant une mouillabilité relativement élevée par rapport à des gouttelettes qui forment la couche organique est disposée sur la surface du côté film organique du premier film inorganique (19a) dans une région d'affichage (D), et une région de faible mouillabilité (Rbf) ayant une mouillabilité relativement faible par rapport à des gouttelettes est disposée sur la surface du côté film organique du premier film inorganique (19a) dans une région de trame (F).
PCT/JP2017/038534 2017-10-25 2017-10-25 Dispositif d'affichage et son procédé de fabrication WO2019082303A1 (fr)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259479A (ja) * 2004-03-11 2005-09-22 Sharp Corp 有機ｅｌ表示装置用基板およびその製造方法、ならびに有機ｅｌ表示装置およびその製造方法
JP2012253036A (ja) * 2002-01-15 2012-12-20 Seiko Epson Corp 表示装置および電子機器
JP2015084104A (ja) * 2008-05-11 2015-04-30 Ｎｌｔテクノロジー株式会社 非矩形状の画素アレイ及び該アレイを備える表示装置
JP2015088275A (ja) * 2013-10-29 2015-05-07 パナソニック株式会社 表示パネル装置および電子機器
JP2016031930A (ja) * 2014-07-25 2016-03-07 株式会社半導体エネルギー研究所 剥離方法、発光装置、モジュール、及び電子機器
US20160365395A1 (en) * 2015-06-09 2016-12-15 Shanghai Tianma AM-OLED Co., Ltd. Organic light-emitting display panel and forming method thereof
JP2017021354A (ja) * 2013-11-15 2017-01-26 株式会社半導体エネルギー研究所 電子機器及び、電子機器のオペレーティングシステム
US20170279082A1 (en) * 2014-08-18 2017-09-28 Oledworks Gmbh An organic conversion device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012253036A (ja) * 2002-01-15 2012-12-20 Seiko Epson Corp 表示装置および電子機器
JP2005259479A (ja) * 2004-03-11 2005-09-22 Sharp Corp 有機ｅｌ表示装置用基板およびその製造方法、ならびに有機ｅｌ表示装置およびその製造方法
JP2015084104A (ja) * 2008-05-11 2015-04-30 Ｎｌｔテクノロジー株式会社 非矩形状の画素アレイ及び該アレイを備える表示装置
JP2015088275A (ja) * 2013-10-29 2015-05-07 パナソニック株式会社 表示パネル装置および電子機器
JP2017021354A (ja) * 2013-11-15 2017-01-26 株式会社半導体エネルギー研究所 電子機器及び、電子機器のオペレーティングシステム
JP2016031930A (ja) * 2014-07-25 2016-03-07 株式会社半導体エネルギー研究所 剥離方法、発光装置、モジュール、及び電子機器
US20170279082A1 (en) * 2014-08-18 2017-09-28 Oledworks Gmbh An organic conversion device
US20160365395A1 (en) * 2015-06-09 2016-12-15 Shanghai Tianma AM-OLED Co., Ltd. Organic light-emitting display panel and forming method thereof

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