WO2019082303A1 - Display device and method for manufacturing same - Google Patents

Display device and method for manufacturing same

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Publication number
WO2019082303A1
WO2019082303A1 PCT/JP2017/038534 JP2017038534W WO2019082303A1 WO 2019082303 A1 WO2019082303 A1 WO 2019082303A1 JP 2017038534 W JP2017038534 W JP 2017038534W WO 2019082303 A1 WO2019082303 A1 WO 2019082303A1
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WO
WIPO (PCT)
Prior art keywords
film
display device
organic
region
inorganic film
Prior art date
Application number
PCT/JP2017/038534
Other languages
French (fr)
Japanese (ja)
Inventor
純平 高橋
通 園田
恵信 宮本
Original Assignee
シャープ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to PCT/JP2017/038534 priority Critical patent/WO2019082303A1/en
Publication of WO2019082303A1 publication Critical patent/WO2019082303A1/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • H10K59/8731Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/02Details
    • H05B33/04Sealing arrangements, e.g. against humidity
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Definitions

  • the present invention relates to a display device and a method of manufacturing the same.
  • Patent Document 1 has a laminated structure in which an inorganic film layer formed by a CVD (chemical vapor deposition) method or the like and an organic film layer formed by an inkjet method or the like are alternately arranged, Disclosed is a display device provided with a thin film sealing layer covering an element.
  • CVD chemical vapor deposition
  • a convex blocking wall may be provided in the frame area around the display area so as to surround the organic EL element constituting the display area. If this happens, the width of the frame area widens, making it difficult to narrow the frame of the display device.
  • the present invention has been made in view of the above-mentioned point, and an object of the present invention is to form an end portion of an organic film constituting a sealing film with high accuracy and to narrow a frame.
  • a display device in a display region for displaying an image, a base substrate having a frame region defined around the display region, and the display region of the base substrate. And a sealing film provided in the display area and the frame area so as to cover the light emitting element, and in which a first inorganic film, an organic film, and a second inorganic film are sequentially stacked.
  • a high wettability region having relatively high wettability to the droplets to be the organic film is provided on the surface on the organic film side of the first inorganic film in the display region, and the frame region
  • a low wettability region having relatively low wettability to the liquid droplet is provided on the surface of the first inorganic film on the organic film side in the above.
  • a droplet to be the organic film is formed on the surface on the organic film side of the first inorganic film in the display area.
  • a high wettability region having a relatively high wettability to the surface is provided, and the surface on the organic film side of the first inorganic film in the frame region has a low wettability having a relatively low wettability to droplets. Since the property region is provided, the end portion of the organic film constituting the sealing film can be formed with high accuracy, and the frame can be narrowed.
  • FIG. 1 is a plan view showing a schematic configuration of an organic EL display device according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing the detailed configuration of the display area of the organic EL display taken along line II-II in FIG.
  • FIG. 3 is a cross-sectional view showing an organic EL layer constituting the organic EL display device according to the first embodiment of the present invention.
  • FIG. 4 is a cross-sectional view showing a detailed configuration of the organic EL display taken along the line IV-IV in FIG.
  • FIG. 5 is a cross-sectional view showing the detailed configuration of the organic EL display taken along the line VV in FIG. FIG.
  • FIG. 6 is a plan view in the frame area of the first inorganic film of the sealing film constituting the organic EL display device according to the first embodiment of the present invention.
  • FIG. 7 is a plan view of the first inorganic film of the sealing film constituting the organic EL display device according to the first embodiment of the present invention in a non-display area.
  • FIG. 8 is a cross-sectional view showing a droplet to be an organic film of a sealing film constituting the organic EL display device according to the first embodiment of the present invention.
  • FIG. 9 is a perspective view showing the method of manufacturing the organic EL display device according to the first embodiment of the present invention.
  • FIG. 10 is a plan view showing a first inorganic film of a sealing film constituting the organic EL display device according to the first embodiment of the present invention.
  • FIG. 11 is a plan view showing a modification of the first inorganic film of the sealing film constituting the organic EL display device according to the first embodiment of the present invention.
  • FIG. 12 is a plan view showing a schematic configuration of an organic EL display device according to a second embodiment of the present invention.
  • FIG. 13 is a cross-sectional view showing a detailed configuration of the organic EL display taken along line XIII-XIII in FIG.
  • FIG. 14 is a plan view showing a first inorganic film of a sealing film constituting the organic EL display device according to the second embodiment of the present invention.
  • FIG. 15 is a plan view showing a modification of the first inorganic film of the sealing film constituting the organic EL display device according to the second embodiment of the present invention.
  • First Embodiment 1 to 11 show a first embodiment of a display device and a method of manufacturing the same according to the present invention.
  • an organic EL display device provided with an organic EL element is illustrated as a display device provided with a light emitting element.
  • FIG. 1 is a plan view showing a schematic configuration of the organic EL display device 30a of the present embodiment.
  • FIG. 2 is a cross-sectional view showing the detailed configuration of the display area D of the organic EL display device 30a, taken along the line II-II in FIG.
  • FIG. 3 is a cross-sectional view showing the organic EL layer 16 constituting the organic EL display device 30a.
  • FIG. 4 and 5 are cross-sectional views showing the detailed configuration of the organic EL display device 30a, taken along the line IV-IV and the line V-V in FIG.
  • FIG. 6 is a plan view of the frame region F of the first inorganic film 19a of the sealing film 22a of the organic EL display device 30a.
  • FIG. 7 is a plan view of the non-display area Na of the first inorganic film 19a of the sealing film 22a constituting the organic EL display device 30a.
  • FIG. 8 is a cross-sectional view showing the droplet L to be the organic film 20 of the sealing film 22a constituting the organic EL display device 30a, where (a) shows the droplet L on the high wettability region Rad.
  • FIG. 6B shows the droplet L on the low wettability region Rbf.
  • FIG. 9 is a perspective view which shows the 1st inorganic film formation process in the sealing film formation process of the manufacturing method of the organic electroluminescence display 30a.
  • FIG. 10 is a plan view showing the first inorganic film 19a of the sealing film 22a constituting the organic EL display device 30a.
  • FIG. 11 is a plan view showing a first inorganic film 19b which is a modification of the first inorganic film 19a of the sealing film 22a constituting the organic EL display device 30a.
  • the organic EL display device 30 a is provided in a substantially rectangular shape in which each corner is chamfered in an R shape in plan view. Further, in the organic EL display device 30a, as shown in FIG. 1, a display area D for image display is defined in a substantially rectangular shape, and a frame area F is defined in a frame shape around the display area D. Here, each corner of the display area D is chamfered in an R shape as shown in FIG. Further, in the display area D, a plurality of pixels are arranged in a matrix.
  • each pixel of the display area D for example, a sub-pixel for performing red gradation display, a sub-pixel for performing green gradation display, and a sub-pixel for performing blue gradation display They are arranged side by side. Further, as shown in FIG. 1, for example, a non-display area Na in which a camera, a fingerprint sensor, and the like are disposed is provided in a circular island shape inside the display area D. Further, as shown in FIG. 1, a terminal portion T is provided on the left side of the frame area F in the drawing.
  • the organic EL display device 30 a includes a base substrate 10, an organic EL element 18 provided on the base substrate 10 as a light emitting element in the display region D via a base coat film 11, and an organic EL element 18. And a sealing film 22a provided in the display area D and the frame area F so as to cover the above.
  • the base substrate 10 is, for example, a plastic substrate made of polyimide resin or the like or a glass substrate.
  • the base coat film 11 is, for example, an inorganic insulating film such as a silicon oxide film or a silicon nitride film.
  • the organic EL element 18 includes a plurality of TFTs 12 sequentially provided on the base coat layer 11, a planarization film 13, a plurality of first electrodes 14, a partition 15, a plurality of organic EL layers 16 and a second An electrode 17 is provided.
  • the TFT 12 is a switching element provided for each sub-pixel of the display area D.
  • the TFT 12 may overlap with a semiconductor layer provided in an island shape on the base coat film 11, a gate insulating film provided so as to cover the semiconductor layer, and a part of the semiconductor layer on the gate insulating film. And an interlayer insulating film provided to cover the gate electrode, and a source electrode and a drain electrode provided on the interlayer insulating film and arranged to be separated from each other.
  • the top gate type TFT 12 is illustrated in this embodiment, the TFT 12 may be a bottom gate type TFT.
  • the planarizing film 13 is provided so as to planarize the surface shape of each TFT 12 by covering other than a part of the drain electrode of each TFT 12 as shown in FIG.
  • the planarization film 13 is made of, for example, a colorless and transparent organic resin material such as an acrylic resin.
  • the plurality of first electrodes 14 are provided in a matrix on the planarization film 13 so as to correspond to the plurality of sub-pixels.
  • the first electrode 14 is connected to the drain electrode of each TFT 12 through a contact hole formed in the planarization film 13.
  • the first electrode 14 has a function of injecting holes into the organic EL layer 16.
  • the first electrode 14 is more preferably formed of a material having a large work function in order to improve the hole injection efficiency into the organic EL layer 16.
  • the first electrode 14 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And metal materials such as lithium fluoride (LiF).
  • the material which comprises the 1st electrode 14 is magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxidation, for example Astatine (AtO 2 ), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), or lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc. It may be an alloy.
  • the material constituting the first electrode 14 is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO) or the like. It may be. Further, the first electrode 14 may be formed by laminating a plurality of layers made of the above materials. In addition, as a material with a large work function, indium tin oxide (ITO), indium zinc oxide (IZO), etc. are mentioned, for example.
  • the partition walls 15 are provided in a lattice shape so as to cover the peripheral portion of each first electrode 14.
  • a material forming the partition 15 for example, silicon nitride (SiN x (x is a positive number)) such as silicon oxide (SiO 2 ), trisilicon tetranitride (Si 3 N 4 ), silicon oxynitride Inorganic films such as (SiNO) or organic films such as polyimide resin, acrylic resin, polysiloxane resin, and novolac resin can be mentioned.
  • a blocking wall formed of the same material in the same layer as at least one of the planarizing film 13 and the partition 15 is frame-shaped so as to surround the organic EL element 18. It may be provided.
  • the plurality of organic EL layers 16 are disposed on the respective first electrodes 14 and provided in a matrix so as to correspond to the plurality of sub-pixels.
  • the organic EL layer 16 is provided with a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4 and an electron injection layer sequentially provided on the first electrode 14. It has five.
  • the hole injection layer 1 is also referred to as an anode buffer layer, and has the function of improving the hole injection efficiency from the first electrode 14 to the organic EL layer 16 by bringing the energy levels of the first electrode 14 and the organic EL layer 16 closer.
  • the material constituting the hole injection layer for example, triazole derivative, oxadiazole derivative, imidazole derivative, polyarylalkane derivative, pyrazoline derivative, phenylenediamine derivative, oxazole derivative, styrylanthracene derivative, fluorenone derivative, Hydrazone derivatives, stilbene derivatives and the like can be mentioned.
  • the hole transport layer 2 has a function of improving the transport efficiency of holes from the first electrode 14 to the organic EL layer 16.
  • a material constituting the hole transport layer 2 for example, porphyrin derivative, aromatic tertiary amine compound, styrylamine derivative, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivative, oxadiazole Derivative, imidazole derivative, polyarylalkane derivative, pyrazoline derivative, pyrazolone derivative, phenylenediamine derivative, arylamine derivative, amine-substituted chalcone derivative, oxazole derivative, styrylanthracene derivative, fluorenone derivative, hydrazone derivative, stilbene derivative, hydrogenated amorphous silicon, Hydrogenated amorphous silicon carbide, zinc sulfide, zinc selenide and the like can be mentioned.
  • the light emitting layer 3 holes and electrons are injected from the first electrode 14 and the second electrode 17, respectively, and holes and electrons are recombined when a voltage is applied by the first electrode 14 and the second electrode 17. It is an area.
  • the light emitting layer 3 is formed of a material having high light emission efficiency.
  • a metal oxinoid compound [8-hydroxy quinoline metal complex], a naphthalene derivative, an anthracene derivative, a diphenyl ethylene derivative, a vinylacetone derivative, a triphenylamine derivative, a butadiene derivative, a coumarin derivative, for example , Benzoxazole derivative, oxadiazole derivative, oxazole derivative, benzimidazole derivative, thiadiazole derivative, benzthiazole derivative, styryl derivative, styrylamine derivative, bisstyrylbenzene derivative, trisstyrylbenzene derivative, perylene derivative, perinone derivative, aminopyrene derivative, Pyridine derivatives, rhodamine derivatives, aquidin derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylene vinylet , Polysilane, and the like.
  • the electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3.
  • a material constituting the electron transport layer 4 for example, as an organic compound, oxadiazole derivative, triazole derivative, benzoquinone derivative, naphthoquinone derivative, anthraquinone derivative, tetracyanoanthraquinodimethane derivative, diphenoquinone derivative, fluorenone derivative And silole derivatives, metal oxinoid compounds and the like.
  • the electron injection layer 5 has a function of bringing the energy levels of the second electrode 17 and the organic EL layer 16 closer to each other and improving the efficiency of injecting electrons from the second electrode 17 to the organic EL layer 16.
  • the drive voltage of the organic EL element 18 can be reduced.
  • the electron injection layer 5 is also called a cathode buffer layer.
  • a material constituting the electron injection layer 5 for example, lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), barium fluoride Inorganic alkali compounds such as (BaF 2 ), aluminum oxide (Al 2 O 3 ), strontium oxide (SrO) and the like can be mentioned.
  • the second electrode 17 is provided so as to cover the organic EL layers 16 and the partition walls 15 and to be common to a plurality of sub-pixels.
  • the second electrode 17 has a function of injecting electrons into the organic EL layer 16.
  • the second electrode 17 is more preferably made of a material having a small work function in order to improve the electron injection efficiency into the organic EL layer 16.
  • the second electrode 17 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And lithium fluoride (LiF).
  • the second electrode 17 may be, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxide astatine (AtO 2) And lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc. May be
  • the second electrode 17 may be formed of, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), etc. .
  • the second electrode 17 may be formed by laminating a plurality of layers made of the above materials.
  • a material having a small work function for example, magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al) Etc.
  • the same material as the source electrode and the drain electrode of the TFT 12 is formed of the same material so as to surround the organic EL element 18, A wire 12 a connected to the second electrode 17 is provided.
  • the sealing film 22a is, as shown in FIGS. 2, 4 and 5, a first inorganic film 19a provided so as to cover the organic EL element 18, and an organic film 20 provided on the first inorganic film 19a. And a second inorganic film 21 provided to cover the organic film 20.
  • the first inorganic film 19a is made of, for example, an inorganic insulating film such as a silicon nitride film.
  • an inorganic insulating film such as a silicon nitride film.
  • a high wettability region Rad having a contact angle ⁇ of less than 10 ° (see FIG. 8A) is provided.
  • the surface of the first inorganic film 19a on the organic film 20 side in the frame region F has relatively low wettability (for example, contact angle) to the droplets L to be the organic film 20 as shown in FIG.
  • the width of the frame region F is, for example, about 1 mm
  • the diameter of the high wettability region Raf is, for example, about 20 ⁇ m
  • the density of the high wettability region Raf is about 750000 pieces / cm 2.
  • the high wettability region Ran having relatively high wettability to the droplets L to be the organic film 20 has low wettability. It is provided along the periphery of the region Rbn, that is, along the boundary with the display region D in a point shape.
  • the diameter of the non-display area Na is, for example, about 10 mm
  • the diameter of the high-wettability area Ran is, for example, about 20 ⁇ m
  • the density of the high-wettability area Ran is about 750,000 pieces / cm 2 . is there.
  • the high wettability region Raf may have a polygonal shape such as a triangle or a square in plan view.
  • the organic film is formed by arranging the apex of the triangle on the display region D side and arranging the base of the triangle on the opposite side to the display region D.
  • the damming effect of the organic resin material constituting 20 may be improved.
  • the contact angle which is an index representing the wettability, is measured according to the static drop method described in JIS R 3257: 1999, but for the measurement of the contact angle in this embodiment, CVD instead of the glass substrate is used.
  • a vapor deposition substrate is used, and an ink material is used instead of water.
  • the organic film 20 is made of, for example, an organic resin material such as acrylate, epoxy, silicone, polyurea, parylene, polyimide, or polyamide.
  • the second inorganic film 21 is made of, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film.
  • the organic EL display device 30a described above has flexibility, and is configured to perform image display by appropriately emitting light from the light emitting layer 3 of the organic EL layer 16 through the TFT 12 in each sub-pixel. .
  • the method of manufacturing the organic EL display device 30a of the present embodiment includes an organic EL element forming step (a light emitting element forming step) and a sealing film forming step.
  • the first inorganic film 19a partially shown in FIGS. 6 and 7 is entirely shown, but the high wettability regions Raf and Ran formed on the surface of the first inorganic film 19a are shown.
  • the number and arrangement are simplified, and in FIG. 9, the number and arrangement of the openings of the mask M for forming the high wettability regions Rad, Raf and Ran are simplified in accordance with FIG.
  • Organic EL element formation process For example, on the surface of the base substrate 10 made of polyimide resin, the base coat film 11 and the organic EL element 18 (TFT 12, planarizing film 13, first electrode 14, partition 15, organic EL layer 16 (positive The hole injection layer 1, the hole transport layer 2, the light emitting layer 3, the electron transport layer 4, the electron injection layer 5), and the second electrode 17) are formed.
  • an inorganic insulating film 19 such as a silicon nitride film is formed to a thickness of about several tens of nm to several ⁇ m by plasma CVD to cover the organic EL element 18 formed in the organic EL element formation step.
  • the surface of the inorganic insulating film 19 is irradiated with ultraviolet rays U through the mask M to have high wettability regions Rad, Raf and Ran, and low wettability regions Rbf and Rbn.
  • the first inorganic film 19a is formed (first inorganic film forming step).
  • the mask M is formed, for example, by bonding an aluminum foil having a light shielding property to the surface of a glass substrate.
  • the mask M is provided with a first opening Ad, a second opening Af and a third opening An so as to be superimposed on the high wettability regions Rad, Raf and Ran, respectively. .
  • the dot-like second opening Af and the third opening An are formed to be concentrated at the boundary with the display area D.
  • an organic resin material such as acrylate is discharged by an inkjet method to a thickness of several ⁇ m to several 10 ⁇ m to the high wettability region Rad of the substrate on which the first inorganic film 19a is formed.
  • the film 20 is formed (organic film formation step).
  • the low wettability region Rbf is provided around the high wettability region Rad, so the frame region F of the droplet L of the organic resin material forming the organic film 20 is provided. Flow can be suppressed.
  • the high wettability region Raf is provided in a point shape in the low wettability region Rbf, droplets L of the organic resin material constituting the organic film 20 by the pinning effect. Flow into the frame region F can be further suppressed.
  • the low wettability region Rbn is provided in the non-display area Na, so that the flow of the droplets L of the organic resin material constituting the organic film 20 into the non-display area Na is suppressed. be able to.
  • the organic resin constituting the organic film 20 is formed by the pinning effect.
  • the flow of material droplets L into the non-display area Na can be further suppressed.
  • an inorganic insulating film such as a silicon nitride film is deposited by plasma CVD to a thickness of about several tens of nm to several ⁇ m, and the second inorganic film 21 is formed.
  • the sealing film 22a which consists of the 1st inorganic film 19a, the organic film 20, and the 2nd inorganic film 21 is formed (2nd inorganic film formation process).
  • the organic EL display device 30a of the present embodiment can be manufactured.
  • the method of forming the first inorganic film 19a having the high wettability regions Rad, Raf, and Ran by irradiating the surface of the inorganic film such as the silicon nitride film with ultraviolet light U has been exemplified.
  • Another inorganic film such as a silicon oxide film may be formed on the surface of an inorganic film such as a silicon nitride film to form the first inorganic film 19 b. Specifically, as shown in FIG.
  • an inorganic insulating film such as a silicon nitride film is formed by plasma CVD over the entire surface of the substrate on which the organic EL element 18 is formed in the organic EL element formation step.
  • Inorganic film 19ba (low wettability region Rbf) is formed.
  • an inorganic insulating film such as a silicon oxide film is formed on the surface of the substrate on which the inorganic film 19ba is formed by plasma CVD using a mask to form inorganic film 19bbd (high wettability region Rad) and inorganic film 19bbf (high wettability region Rad).
  • the high wettability region Raf is formed.
  • an inorganic insulating film such as a silicon nitride film is formed on the surface of the substrate on which the inorganic films 19bbd and 19bbf are formed by plasma CVD using a mask to form an inorganic film 19bc (low wettability region Rbn). Further, an inorganic insulating film such as a silicon oxide film is formed on the surface of the substrate on which the inorganic film 19bc is formed by plasma CVD using a mask to form an inorganic film 19bd (high wettability region Ran). In this manner, the first inorganic film 19b may be formed with the inorganic films 19ba, 19bbd, 19bbf, 19bc and 19bd.
  • the organic EL display device 30a of the present embodiment and the method for manufacturing the same display is performed on the sealing film 22a in which the first inorganic film 19a, the organic film 20, and the second inorganic film 21 are sequentially stacked.
  • a high wettability region Rad having relatively high wettability to the droplets L to be the organic film 20 is provided.
  • a low wettability region Rbf having relatively low wettability to the droplet L is provided on the surface of the first inorganic film 19a on the organic film 20 side.
  • the low wettability region Rbf is provided around the high wettability region Rad, so the organic resin forming the organic film 20 in the organic film formation step of the sealing film formation step
  • the flow of the droplet L of the material into the frame area F can be suppressed. Therefore, the end of the organic film 20 forming the sealing film 22a can be formed with high accuracy, and the frame can be narrowed in the organic EL display device 30a.
  • the high wettability region Raf is provided in a dotted shape in the low wettability region Rbf in the first inorganic film 19a.
  • the flow of the droplets L of the organic resin material constituting the organic film 20 into the frame region F can be further suppressed by the pinning effect.
  • the non-display area Na is provided in an island shape in the display area D, and the first inorganic film 19a in the island non-display area Na is provided.
  • the low wettability region Rbn is provided on the surface on the organic film 20 side.
  • the low wettability region Rbn is provided in the non-display region Na on the surface of the first inorganic film 19a. Therefore, in the organic film formation step of the sealing film formation step, the organic resin material constituting the organic film 20 The flow of the liquid droplets L into the non-display area Na can be suppressed.
  • the organic EL display device 30a of the present embodiment and the method of manufacturing the same in the first inorganic film 19a, the high wettability region Ran is provided in a dotted manner in the low wettability region Rbn of the non-display region Na. Therefore, the flow of the droplets L of the organic resin material constituting the organic film 20 into the non-display area Na can be further suppressed by the pinning effect.
  • the high wettability regions Rad, Raf and Ran have high wettability simply by irradiating the surface of the inorganic insulating film 19 to be the first inorganic film 19a with ultraviolet rays U. Since it is formed, the end portion of the organic film 20 constituting the sealing film 22a can be accurately formed at low manufacturing cost, and the frame can be narrowed of the organic EL display device 30a.
  • FIG. 12 is a plan view showing a schematic configuration of the organic EL display device 30b of the present embodiment.
  • FIG. 13 is a cross-sectional view showing the detailed configuration of the organic EL display device 30b, taken along line XIII-XIII in FIG.
  • FIG. 14 is a plan view showing the first inorganic film 19c of the sealing film 22b which constitutes the organic EL display device 30b.
  • FIG. 15 is a plan view showing a first inorganic film 19d which is a modification of the first inorganic film 19c of the sealing film 22b constituting the organic EL display device 30b.
  • the same parts as those in FIGS. 1 to 11 are denoted by the same reference numerals, and detailed descriptions thereof will be omitted.
  • the organic EL display device 30a in which the non-display area Na is provided inside the display area D is exemplified.
  • the non-display area Nb is not in the notch portion of the display area D.
  • the organic EL display device 30b provided is illustrated.
  • the organic EL display device 30b is provided in a substantially rectangular shape in which each corner is chamfered in an R shape in a plan view. Further, in the organic EL display device 30b, as shown in FIG. 12, a display area D for image display is defined in a substantially rectangular shape, and a frame area F is defined in a frame shape around the display area D.
  • the display area D is provided in a shape in which a part of the peripheral edge is cut in a semicircular shape, and a camera or a fingerprint is formed in the semicircular cut portion, for example.
  • a non-display area Nb in which a sensor or the like is arranged is provided adjacent to the frame area F.
  • the organic EL display device 30 b includes a base substrate 10, an organic EL element 18 provided on the base substrate 10 as a light emitting element in the display region D via the base coat film 11, and an organic EL element 18. And a sealing film 22 b provided in the display area D, the non-display area Nb, and the frame area F so as to cover the display area D.
  • the sealing film 22 b includes a first inorganic film 19 c provided so as to cover the organic EL element 18, an organic film 20 provided on the first inorganic film 19 c, and an organic film 20. And a second inorganic film 21 provided so as to cover it.
  • the first inorganic film 19c is made of, for example, an inorganic insulating film such as a silicon nitride film.
  • an inorganic insulating film such as a silicon nitride film.
  • a high wettability region Rad having is provided on the surface of the first inorganic film 19c on the organic film 20 side in the display region D.
  • the surface of the first inorganic film 19c on the organic film 20 side in the frame region F has relatively low wettability to the droplets L to be the organic film 20 as shown in FIGS. 13 and 14.
  • a low wettability region Rbf is provided. Then, in the low wettability region Rbf of the frame region F, as shown in FIG.
  • high wettability regions Raf having relatively high wettability to the droplets L to be the organic film 20 are provided in a dotted manner. It is done.
  • a low wettability region Rbn having low wettability on the surface of the first inorganic film 19c on the organic film 20 side in the non-display area Nb of the notched portion of the display area D, as shown in FIG.
  • a low wettability region Rbn having low wettability on the surface of the first inorganic film 19c on the organic film 20 side in the non-display area Nb of the notched portion of the display area D.
  • a low wettability region Rbn having low wettability.
  • the high wettability region Ran having relatively high wettability to the droplets L to be the organic film 20 has low wettability. It is provided along the periphery of the region Rbn, that is, along the boundary with the display region D in a point shape.
  • the organic EL display device 30b described above has flexibility, and is configured to perform image display by appropriately emitting light from the light emitting layer 3 of the organic EL layer 16 through the TFT 12 in each sub-pixel. .
  • the organic EL display device 30b changes the region irradiated with the ultraviolet light U, for example, to reduce the low wettability region of the non-display region Nb. It can be manufactured by arranging Rbn and the high wettability region Ran.
  • the method of forming the first inorganic film 19c having the high wettability regions Rad, Raf, and Ran by irradiating the surface of the inorganic film such as the silicon nitride film with the ultraviolet light U is illustrated.
  • Another inorganic film such as a silicon oxide film may be formed on the surface of an inorganic film such as a silicon nitride film to form the first inorganic film 19 d.
  • an inorganic insulating film such as a silicon nitride film is formed by plasma CVD over the entire surface of the substrate on which the organic EL element 18 is formed in the organic EL element forming step.
  • the inorganic film 19da (low wettability regions Rbf and Rbn) are formed.
  • an inorganic insulating film such as a silicon oxide film or the like is formed on the substrate surface on which the inorganic film 19da is formed by plasma CVD using a mask to form an inorganic film 19dbd (high wettability region Rad), inorganic film 19dbf (high The wettability region Raf) and the inorganic film 19 dbn (high wettability region Ran) are formed.
  • the first inorganic film 19d provided with the inorganic films 19da, 19dbd, 19dbf and 19bbn may be formed.
  • the organic EL display device 30b of the present embodiment and the method of manufacturing the same display is performed on the sealing film 22b in which the first inorganic film 19c, the organic film 20, and the second inorganic film 21 are sequentially stacked.
  • a high wettability region Rad having relatively high wettability to the droplets L to be the organic film 20 is provided.
  • a low wettability region Rbf having relatively low wettability to the droplet L is provided on the surface of the first inorganic film 19c on the organic film 20 side.
  • the low wettability region Rbf is provided around the high wettability region Rad, so the organic resin forming the organic film 20 in the organic film formation step of the sealing film formation step
  • the flow of the droplet L of the material into the frame area F can be suppressed. Therefore, the end of the organic film 20 forming the sealing film 22b can be formed with high accuracy, and the frame can be narrowed in the organic EL display device 30b.
  • the high wettability region Raf is provided in a point shape in the low wettability region Rbf in the first inorganic film 19c.
  • the flow of the droplets L of the organic resin material constituting the organic film 20 into the frame region F can be further suppressed by the pinning effect.
  • the non-display area Nb is provided in the notched portion of the display area D, and the organic film 20 side of the first inorganic film 19c in the non-display area Nb.
  • the low wettability region Rbn is provided on the surface of.
  • the low wettability region Rbn is provided in the non-display region Nb on the surface of the first inorganic film 19c, so that the organic resin material constituting the organic film 20 in the organic film formation step of the sealing film formation step.
  • the flow of the liquid droplet L into the non-display area Nb can be suppressed.
  • the high wettability region Ran is provided in a dotted shape in the low wettability region Rbn of the non-display region Nb. Therefore, the flow of the droplets L of the organic resin material constituting the organic film 20 into the non-display area Nb can be further suppressed by the pinning effect.
  • the high wettability regions Rad, Raf and Ran have high wettability only by irradiating the surface of the inorganic insulating film 19 to be the first inorganic film 19c with ultraviolet rays U. Since it is formed, the end portion of the organic film 20 constituting the sealing film 22b can be accurately formed at low manufacturing cost, and the frame can be narrowed of the organic EL display device 30b.
  • the organic EL display device 30a in which the non-display area Na is provided inside the display area D is exemplified, and in the second embodiment, the non-display area is not provided in the notched portion of the display area D.
  • the organic EL display device 30b provided with Nb is illustrated, the present invention can also be applied to an organic EL display device provided with non-display regions Na and Nb in the display region D and notches. .
  • the present invention is a display device provided with a plurality of light emitting elements driven by current, for example, a light emitting element using a quantum dot containing layer
  • the present invention can be applied to a display device provided with a QLED (Quantum-dot light emitting diode).
  • the organic EL layer having a five-layer laminated structure of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer is exemplified. It may be a three-layer laminated structure of a hole injection layer and hole transport layer, a light emitting layer, and an electron transport layer and electron injection layer.
  • the organic EL display device is exemplified in which the first electrode is an anode and the second electrode is a cathode.
  • the laminated structure of the organic EL layer is reversed and the first electrode is a cathode.
  • the present invention can also be applied to an organic EL display device in which the second electrode is an anode.
  • the organic EL display device in which the electrode of the TFT connected to the first electrode is the drain electrode is exemplified.
  • the electrode of the TFT connected to the first electrode is the source electrode
  • the present invention can also be applied to an organic EL display device to be called.
  • the present invention is useful for flexible display devices.

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Abstract

According to the present invention, in a sealing film on which a first inorganic film (19a), an organic film, and a second inorganic film are laminated in this order, a high-wettability region (Rad) having relatively high wettability with respect to droplets which form the organic layer is provided to the surface of the organic film side of the first inorganic film (19a) in a display region (D), and a low-wettability region (Rbf) having relatively low wettability with respect to droplets is provided to the surface of the organic film side of the first inorganic film (19a) in a frame region (F).

Description

表示装置及びその製造方法Display device and method of manufacturing the same
 本発明は、表示装置及びその製造方法に関するものである。 The present invention relates to a display device and a method of manufacturing the same.
 近年、液晶表示装置に代わる表示装置として、有機EL(electroluminescence)素子を用いた自発光型の有機EL表示装置が注目されている。ここで、有機EL表示装置では、水分や酸素等の混入による有機EL素子の劣化を抑制するために、有機EL素子を覆う封止膜を無機膜及び有機膜の積層膜で構成する封止構造が提案されている。 In recent years, self-luminous organic EL display devices using organic EL (electroluminescence) elements have attracted attention as display devices replacing liquid crystal display devices. Here, in the organic EL display device, a sealing structure in which a sealing film covering the organic EL element is formed of a laminated film of an inorganic film and an organic film in order to suppress deterioration of the organic EL element due to mixing of moisture, oxygen and the like. Has been proposed.
 例えば、特許文献1には、CVD(chemical vapor deposition)法等により形成された無機膜層と、インクジェット法等により形成された有機膜層とが交互に配置された積層構造を有し、有機発光素子を覆う薄膜封止層を備えた表示装置が開示されている。 For example, Patent Document 1 has a laminated structure in which an inorganic film layer formed by a CVD (chemical vapor deposition) method or the like and an organic film layer formed by an inkjet method or the like are alternately arranged, Disclosed is a display device provided with a thin film sealing layer covering an element.
特開2014-86415号公報JP 2014-86415 A
 ところで、上記特許文献1に開示された表示装置のように、封止膜を構成する有機膜をインクジェット法で形成する場合には、有機膜の端部を精度よく形成することが困難であるので、有機膜となる液滴の周囲への拡がりを抑制するために、表示領域を構成する有機EL素子を囲むように凸状の堰止壁を表示領域の周囲の額縁領域に設けることがある。そうなると、額縁領域の幅が広くなるので、表示装置の狭額縁化が困難になってしまう。 By the way, it is difficult to accurately form the end portion of the organic film when the organic film forming the sealing film is formed by the inkjet method as in the display device disclosed in the above-mentioned Patent Document 1 In order to suppress the spread of the droplets to be the organic film, a convex blocking wall may be provided in the frame area around the display area so as to surround the organic EL element constituting the display area. If this happens, the width of the frame area widens, making it difficult to narrow the frame of the display device.
 本発明は、かかる点に鑑みてなされたものであり、その目的とするところは、封止膜を構成する有機膜の端部を精度よく形成して、狭額縁化を図ることにある。 The present invention has been made in view of the above-mentioned point, and an object of the present invention is to form an end portion of an organic film constituting a sealing film with high accuracy and to narrow a frame.
 上記目的を達成するために、本発明に係る表示装置は、画像表示を行う表示領域、及び該表示領域の周囲に額縁領域が規定されたベース基板と、上記ベース基板の上記表示領域に設けられた発光素子と、上記発光素子を覆うように上記表示領域及び額縁領域に設けられ、第1無機膜、有機膜及び第2無機膜が順に積層された封止膜とを備えた表示装置であって、上記表示領域における上記第1無機膜の上記有機膜側の表面には、上記有機膜となる液滴に対して相対的に高い濡れ性を有する高濡れ性領域が設けられ、上記額縁領域における上記第1無機膜の上記有機膜側の表面には、上記液滴に対して相対的に低い濡れ性を有する低濡れ性領域が設けられていることを特徴とする。 In order to achieve the above object, a display device according to the present invention is provided in a display region for displaying an image, a base substrate having a frame region defined around the display region, and the display region of the base substrate. And a sealing film provided in the display area and the frame area so as to cover the light emitting element, and in which a first inorganic film, an organic film, and a second inorganic film are sequentially stacked. A high wettability region having relatively high wettability to the droplets to be the organic film is provided on the surface on the organic film side of the first inorganic film in the display region, and the frame region A low wettability region having relatively low wettability to the liquid droplet is provided on the surface of the first inorganic film on the organic film side in the above.
 本発明によれば、第1無機膜、有機膜及び第2無機膜が順に積層された封止膜において、表示領域における第1無機膜の有機膜側の表面には、有機膜となる液滴に対して相対的に高い濡れ性を有する高濡れ性領域が設けられ、額縁領域における第1無機膜の有機膜側の表面には、液滴に対して相対的に低い濡れ性を有する低濡れ性領域が設けられているので、封止膜を構成する有機膜の端部を精度よく形成して、狭額縁化を図ることができる。 According to the present invention, in the sealing film in which the first inorganic film, the organic film, and the second inorganic film are sequentially stacked, a droplet to be the organic film is formed on the surface on the organic film side of the first inorganic film in the display area. A high wettability region having a relatively high wettability to the surface is provided, and the surface on the organic film side of the first inorganic film in the frame region has a low wettability having a relatively low wettability to droplets. Since the property region is provided, the end portion of the organic film constituting the sealing film can be formed with high accuracy, and the frame can be narrowed.
図1は、本発明の第1の実施形態に係る有機EL表示装置の概略構成を示す平面図である。FIG. 1 is a plan view showing a schematic configuration of an organic EL display device according to a first embodiment of the present invention. 図2は、図1中のII-II線に沿った有機EL表示装置の表示領域の詳細構成を示す断面図である。FIG. 2 is a cross-sectional view showing the detailed configuration of the display area of the organic EL display taken along line II-II in FIG. 図3は、本発明の第1の実施形態に係る有機EL表示装置を構成する有機EL層を示す断面図である。FIG. 3 is a cross-sectional view showing an organic EL layer constituting the organic EL display device according to the first embodiment of the present invention. 図4は、図1中のIV-IV線に沿った有機EL表示装置の詳細構成を示す断面図である。FIG. 4 is a cross-sectional view showing a detailed configuration of the organic EL display taken along the line IV-IV in FIG. 図5は、図1中のV-V線に沿った有機EL表示装置の詳細構成を示す断面図である。FIG. 5 is a cross-sectional view showing the detailed configuration of the organic EL display taken along the line VV in FIG. 図6は、本発明の第1の実施形態に係る有機EL表示装置を構成する封止膜の第1無機膜の額縁領域における平面図である。FIG. 6 is a plan view in the frame area of the first inorganic film of the sealing film constituting the organic EL display device according to the first embodiment of the present invention. 図7は、本発明の第1の実施形態に係る有機EL表示装置を構成する封止膜の第1無機膜の非表示領域における平面図である。FIG. 7 is a plan view of the first inorganic film of the sealing film constituting the organic EL display device according to the first embodiment of the present invention in a non-display area. 図8は、本発明の第1の実施形態に係る有機EL表示装置を構成する封止膜の有機膜となる液滴を示す断面図である。FIG. 8 is a cross-sectional view showing a droplet to be an organic film of a sealing film constituting the organic EL display device according to the first embodiment of the present invention. 図9は、本発明の第1の実施形態に係る有機EL表示装置の製造方法を示す斜視図である。FIG. 9 is a perspective view showing the method of manufacturing the organic EL display device according to the first embodiment of the present invention. 図10は、本発明の第1の実施形態に係る有機EL表示装置を構成する封止膜の第1無機膜を示す平面図である。FIG. 10 is a plan view showing a first inorganic film of a sealing film constituting the organic EL display device according to the first embodiment of the present invention. 図11は、本発明の第1の実施形態に係る有機EL表示装置を構成する封止膜の第1無機膜の変形例を示す平面図である。FIG. 11 is a plan view showing a modification of the first inorganic film of the sealing film constituting the organic EL display device according to the first embodiment of the present invention. 図12は、本発明の第2の実施形態に係る有機EL表示装置の概略構成を示す平面図である。FIG. 12 is a plan view showing a schematic configuration of an organic EL display device according to a second embodiment of the present invention. 図13は、図12中のXIII-XIII線に沿った有機EL表示装置の詳細構成を示す断面図である。FIG. 13 is a cross-sectional view showing a detailed configuration of the organic EL display taken along line XIII-XIII in FIG. 図14は、本発明の第2の実施形態に係る有機EL表示装置を構成する封止膜の第1無機膜を示す平面図である。FIG. 14 is a plan view showing a first inorganic film of a sealing film constituting the organic EL display device according to the second embodiment of the present invention. 図15は、本発明の第2の実施形態に係る有機EL表示装置を構成する封止膜の第1無機膜の変形例を示す平面図である。FIG. 15 is a plan view showing a modification of the first inorganic film of the sealing film constituting the organic EL display device according to the second embodiment of the present invention.
 以下、本発明の実施形態を図面に基づいて詳細に説明する。なお、本発明は、以下の各実施形態に限定されるものではない。 Hereinafter, embodiments of the present invention will be described in detail based on the drawings. The present invention is not limited to the following embodiments.
 《第1の実施形態》
 図1~図11は、本発明に係る表示装置及びその製造方法の第1の実施形態を示している。なお、以下の各実施形態では、発光素子を備えた表示装置として、有機EL素子を備えた有機EL表示装置を例示する。ここで、図1は、本実施形態の有機EL表示装置30aの概略構成を示す平面図である。また、図2は、図1中のII-II線に沿った有機EL表示装置30aの表示領域Dの詳細構成を示す断面図である。また、図3は、有機EL表示装置30aを構成する有機EL層16を示す断面図である。また、図4及び図5は、図1中のIV-IV線及びV-V線に沿った有機EL表示装置30aの詳細構成を示す断面図である。また、図6、有機EL表示装置30aを構成する封止膜22aの第1無機膜19aの額縁領域Fにおける平面図である。また、図7、有機EL表示装置30aを構成する封止膜22aの第1無機膜19aの非表示領域Naにおける平面図である。また、図8は、有機EL表示装置30aを構成する封止膜22aの有機膜20となる液滴Lを示す断面図であり、(a)は、高濡れ性領域Rad上の液滴Lを示し、(b)は、低濡れ性領域Rbf上の液滴Lを示す。また、図9は、有機EL表示装置30aの製造方法の封止膜形成工程における第1無機膜形成工程を示す斜視図である。また、図10は、有機EL表示装置30aを構成する封止膜22aの第1無機膜19aを示す平面図である。また、図11は、有機EL表示装置30aを構成する封止膜22aの第1無機膜19aの変形例である第1無機膜19bを示す平面図である。
First Embodiment
1 to 11 show a first embodiment of a display device and a method of manufacturing the same according to the present invention. In each of the following embodiments, an organic EL display device provided with an organic EL element is illustrated as a display device provided with a light emitting element. Here, FIG. 1 is a plan view showing a schematic configuration of the organic EL display device 30a of the present embodiment. FIG. 2 is a cross-sectional view showing the detailed configuration of the display area D of the organic EL display device 30a, taken along the line II-II in FIG. FIG. 3 is a cross-sectional view showing the organic EL layer 16 constituting the organic EL display device 30a. 4 and 5 are cross-sectional views showing the detailed configuration of the organic EL display device 30a, taken along the line IV-IV and the line V-V in FIG. FIG. 6 is a plan view of the frame region F of the first inorganic film 19a of the sealing film 22a of the organic EL display device 30a. FIG. 7 is a plan view of the non-display area Na of the first inorganic film 19a of the sealing film 22a constituting the organic EL display device 30a. FIG. 8 is a cross-sectional view showing the droplet L to be the organic film 20 of the sealing film 22a constituting the organic EL display device 30a, where (a) shows the droplet L on the high wettability region Rad. 6B shows the droplet L on the low wettability region Rbf. Moreover, FIG. 9 is a perspective view which shows the 1st inorganic film formation process in the sealing film formation process of the manufacturing method of the organic electroluminescence display 30a. FIG. 10 is a plan view showing the first inorganic film 19a of the sealing film 22a constituting the organic EL display device 30a. FIG. 11 is a plan view showing a first inorganic film 19b which is a modification of the first inorganic film 19a of the sealing film 22a constituting the organic EL display device 30a.
 有機EL表示装置30aは、図1に示すように、平面視で各角部がR形状に面取りされた略矩形状に設けられている。また、有機EL表示装置30aでは、図1に示すように、画像表示を行う表示領域Dが略矩形状に規定され、表示領域Dの周囲に額縁領域Fが枠状に規定されている。ここで、表示領域Dの各角部は、図1に示すように、R形状に面取りされている。また、表示領域Dには、複数の画素がマトリクス状に配列されている。なお、表示領域Dの各画素では、例えば、赤色の階調表示を行うためのサブ画素、緑色の階調表示を行うためのサブ画素、及び青色の階調表示を行うためのサブ画素が互いに隣り合うように配列されている。また、表示領域Dの内部には、図1に示すように、例えば、カメラや指紋センサー等を配置させる非表示領域Naが円形の島状に設けられている。また、図1に示すように、額縁領域Fの図中左辺部には、端子部Tが設けられている。 As shown in FIG. 1, the organic EL display device 30 a is provided in a substantially rectangular shape in which each corner is chamfered in an R shape in plan view. Further, in the organic EL display device 30a, as shown in FIG. 1, a display area D for image display is defined in a substantially rectangular shape, and a frame area F is defined in a frame shape around the display area D. Here, each corner of the display area D is chamfered in an R shape as shown in FIG. Further, in the display area D, a plurality of pixels are arranged in a matrix. In each pixel of the display area D, for example, a sub-pixel for performing red gradation display, a sub-pixel for performing green gradation display, and a sub-pixel for performing blue gradation display They are arranged side by side. Further, as shown in FIG. 1, for example, a non-display area Na in which a camera, a fingerprint sensor, and the like are disposed is provided in a circular island shape inside the display area D. Further, as shown in FIG. 1, a terminal portion T is provided on the left side of the frame area F in the drawing.
 有機EL表示装置30aは、図2に示すように、ベース基板10と、ベース基板10上にベースコート膜11を介して表示領域Dに発光素子として設けられた有機EL素子18と、有機EL素子18を覆うように表示領域D及び額縁領域Fに設けられた封止膜22aとを備えている。 As shown in FIG. 2, the organic EL display device 30 a includes a base substrate 10, an organic EL element 18 provided on the base substrate 10 as a light emitting element in the display region D via a base coat film 11, and an organic EL element 18. And a sealing film 22a provided in the display area D and the frame area F so as to cover the above.
 ベース基板10は、例えば、ポリイミド樹脂製等のプラスチック基板やガラス基板である。 The base substrate 10 is, for example, a plastic substrate made of polyimide resin or the like or a glass substrate.
 ベースコート膜11は、例えば、酸化シリコン膜、窒化シリコン膜等の無機絶縁膜である。 The base coat film 11 is, for example, an inorganic insulating film such as a silicon oxide film or a silicon nitride film.
 有機EL素子18は、図2に示すように、ベースコート層11上に順に設けられた複数のTFT12、平坦化膜13、複数の第1電極14、隔壁15、複数の有機EL層16及び第2電極17を備えている。 As shown in FIG. 2, the organic EL element 18 includes a plurality of TFTs 12 sequentially provided on the base coat layer 11, a planarization film 13, a plurality of first electrodes 14, a partition 15, a plurality of organic EL layers 16 and a second An electrode 17 is provided.
 TFT12は、表示領域Dの各サブ画素毎に設けられたスイッチング素子である。ここで、TFT12は、例えば、ベースコート膜11上に島状に設けられた半導体層と、半導体層を覆うように設けられたゲート絶縁膜と、ゲート絶縁膜上に半導体層の一部と重なるように設けられたゲート電極と、ゲート電極を覆うように設けられた層間絶縁膜と、層間絶縁膜上に設けられ、互いに離間するように配置されたソース電極及びドレイン電極とを備えている。なお、本実施形態では、トップゲート型のTFT12を例示したが、TFT12は、ボトムゲート型のTFTであってもよい。 The TFT 12 is a switching element provided for each sub-pixel of the display area D. Here, for example, the TFT 12 may overlap with a semiconductor layer provided in an island shape on the base coat film 11, a gate insulating film provided so as to cover the semiconductor layer, and a part of the semiconductor layer on the gate insulating film. And an interlayer insulating film provided to cover the gate electrode, and a source electrode and a drain electrode provided on the interlayer insulating film and arranged to be separated from each other. Although the top gate type TFT 12 is illustrated in this embodiment, the TFT 12 may be a bottom gate type TFT.
 平坦化膜13は、図2に示すように、各TFT12のドレイン電極の一部以外を覆うことにより、各TFT12による表面形状を平坦化するように設けられている。ここで、平坦化膜13は、例えば、アクリル樹脂等の無色透明な有機樹脂材料により構成されている。 The planarizing film 13 is provided so as to planarize the surface shape of each TFT 12 by covering other than a part of the drain electrode of each TFT 12 as shown in FIG. Here, the planarization film 13 is made of, for example, a colorless and transparent organic resin material such as an acrylic resin.
 複数の第1電極14は、図2に示すように、複数のサブ画素に対応するように、平坦化膜13上にマトリクス状に設けられている。ここで、第1電極14は、図2に示すように、平坦化膜13に形成されたコンタクトホールを介して、各TFT12のドレイン電極に接続されている。また、第1電極14は、有機EL層16にホール(正孔)を注入する機能を有している。また、第1電極14は、有機EL層16への正孔注入効率を向上させるために、仕事関数の大きな材料で形成するのがより好ましい。ここで、第1電極14を構成する材料としては、例えば、銀(Ag)、アルミニウム(Al)、バナジウム(V)、コバルト(Co)、ニッケル(Ni)、タングステン(W)、金(Au)、カルシウム(Ca)、チタン(Ti)、イットリウム(Y)、ナトリウム(Na)、ルテニウム(Ru)、マンガン(Mn)、インジウム(In)、マグネシウム(Mg)、リチウム(Li)、イッテルビウム(Yb)、フッ化リチウム(LiF)等の金属材料が挙げられる。また、第1電極14を構成する材料は、例えば、マグネシウム(Mg)/銅(Cu)、マグネシウム(Mg)/銀(Ag)、ナトリウム(Na)/カリウム(K)、アスタチン(At)/酸化アスタチン(AtO)、リチウム(Li)/アルミニウム(Al)、リチウム(Li)/カルシウム(Ca)/アルミニウム(Al)、又はフッ化リチウム(LiF)/カルシウム(Ca)/アルミニウム(Al)等の合金であっても構わない。さらに、第1電極14を構成する材料は、例えば、酸化スズ(SnO)、酸化亜鉛(ZnO)、インジウムスズ酸化物(ITO)、インジウム亜鉛酸化物(IZO)のような導電性酸化物等であってもよい。また、第1電極14は、上記材料からなる層を複数積層して形成されていてもよい。なお、仕事関数の大きな材料としては、例えば、インジウムスズ酸化物(ITO)やインジウム亜鉛酸化物(IZO)等が挙げられる。 As shown in FIG. 2, the plurality of first electrodes 14 are provided in a matrix on the planarization film 13 so as to correspond to the plurality of sub-pixels. Here, as shown in FIG. 2, the first electrode 14 is connected to the drain electrode of each TFT 12 through a contact hole formed in the planarization film 13. In addition, the first electrode 14 has a function of injecting holes into the organic EL layer 16. The first electrode 14 is more preferably formed of a material having a large work function in order to improve the hole injection efficiency into the organic EL layer 16. Here, as a material constituting the first electrode 14, for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And metal materials such as lithium fluoride (LiF). Moreover, the material which comprises the 1st electrode 14 is magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxidation, for example Astatine (AtO 2 ), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), or lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc. It may be an alloy. Further, the material constituting the first electrode 14 is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO) or the like. It may be. Further, the first electrode 14 may be formed by laminating a plurality of layers made of the above materials. In addition, as a material with a large work function, indium tin oxide (ITO), indium zinc oxide (IZO), etc. are mentioned, for example.
 隔壁15は、図2に示すように、各第1電極14の周縁部を覆うように格子状に設けられている。ここで、隔壁15を構成する材料としては、例えば、酸化シリコン(SiO)、四窒化三ケイ素(Si)のような窒化シリコン(SiNx(xは正数))、シリコンオキシナイトライド(SiNO)等の無機膜、又はポリイミド樹脂、アクリル樹脂、ポリシロキサン樹脂、ノボラック樹脂等の有機膜が挙げられる。なお、有機EL表示装置30aの額縁領域Fには、有機EL素子18を囲むように、平坦化膜13及び隔壁15の少なくとも一方と同一層に同一材料により形成された堰止壁が枠状に設けられていてもよい。 As shown in FIG. 2, the partition walls 15 are provided in a lattice shape so as to cover the peripheral portion of each first electrode 14. Here, as a material forming the partition 15, for example, silicon nitride (SiN x (x is a positive number)) such as silicon oxide (SiO 2 ), trisilicon tetranitride (Si 3 N 4 ), silicon oxynitride Inorganic films such as (SiNO) or organic films such as polyimide resin, acrylic resin, polysiloxane resin, and novolac resin can be mentioned. In the frame area F of the organic EL display device 30a, a blocking wall formed of the same material in the same layer as at least one of the planarizing film 13 and the partition 15 is frame-shaped so as to surround the organic EL element 18. It may be provided.
 複数の有機EL層16は、図2に示すように、各第1電極14上に配置され、複数のサブ画素に対応するように、マトリクス状に設けられている。ここで、有機EL層16は、図3に示すように、第1電極14上に順に設けられた正孔注入層1、正孔輸送層2、発光層3、電子輸送層4及び電子注入層5を備えている。 As shown in FIG. 2, the plurality of organic EL layers 16 are disposed on the respective first electrodes 14 and provided in a matrix so as to correspond to the plurality of sub-pixels. Here, as shown in FIG. 3, the organic EL layer 16 is provided with a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4 and an electron injection layer sequentially provided on the first electrode 14. It has five.
 正孔注入層1は、陽極バッファ層とも呼ばれ、第1電極14と有機EL層16とのエネルギーレベルを近づけ、第1電極14から有機EL層16への正孔注入効率を改善する機能を有している。ここで、正孔注入層1を構成する材料としては、例えば、トリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体、フェニレンジアミン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体等が挙げられる。 The hole injection layer 1 is also referred to as an anode buffer layer, and has the function of improving the hole injection efficiency from the first electrode 14 to the organic EL layer 16 by bringing the energy levels of the first electrode 14 and the organic EL layer 16 closer. Have. Here, as the material constituting the hole injection layer 1, for example, triazole derivative, oxadiazole derivative, imidazole derivative, polyarylalkane derivative, pyrazoline derivative, phenylenediamine derivative, oxazole derivative, styrylanthracene derivative, fluorenone derivative, Hydrazone derivatives, stilbene derivatives and the like can be mentioned.
 正孔輸送層2は、第1電極14から有機EL層16への正孔の輸送効率を向上させる機能を有している。ここで、正孔輸送層2を構成する材料としては、例えば、ポルフィリン誘導体、芳香族第三級アミン化合物、スチリルアミン誘導体、ポリビニルカルバゾール、ポリ-p-フェニレンビニレン、ポリシラン、トリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体、ピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミン置換カルコン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、水素化アモルファスシリコン、水素化アモルファス炭化シリコン、硫化亜鉛、セレン化亜鉛等が挙げられる。 The hole transport layer 2 has a function of improving the transport efficiency of holes from the first electrode 14 to the organic EL layer 16. Here, as a material constituting the hole transport layer 2, for example, porphyrin derivative, aromatic tertiary amine compound, styrylamine derivative, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivative, oxadiazole Derivative, imidazole derivative, polyarylalkane derivative, pyrazoline derivative, pyrazolone derivative, phenylenediamine derivative, arylamine derivative, amine-substituted chalcone derivative, oxazole derivative, styrylanthracene derivative, fluorenone derivative, hydrazone derivative, stilbene derivative, hydrogenated amorphous silicon, Hydrogenated amorphous silicon carbide, zinc sulfide, zinc selenide and the like can be mentioned.
 発光層3は、第1電極14及び第2電極17による電圧印加の際に、第1電極14及び第2電極17から正孔及び電子がそれぞれ注入されると共に、正孔及び電子が再結合する領域である。ここで、発光層3は、発光効率が高い材料により形成されている。そして、発光層3を構成する材料としては、例えば、金属オキシノイド化合物[8-ヒドロキシキノリン金属錯体]、ナフタレン誘導体、アントラセン誘導体、ジフェニルエチレン誘導体、ビニルアセトン誘導体、トリフェニルアミン誘導体、ブタジエン誘導体、クマリン誘導体、ベンズオキサゾール誘導体、オキサジアゾール誘導体、オキサゾール誘導体、ベンズイミダゾール誘導体、チアジアゾール誘導体、ベンズチアゾール誘導体、スチリル誘導体、スチリルアミン誘導体、ビススチリルベンゼン誘導体、トリススチリルベンゼン誘導体、ペリレン誘導体、ペリノン誘導体、アミノピレン誘導体、ピリジン誘導体、ローダミン誘導体、アクイジン誘導体、フェノキサゾン、キナクリドン誘導体、ルブレン、ポリ-p-フェニレンビニレン、ポリシラン等が挙げられる。 In the light emitting layer 3, holes and electrons are injected from the first electrode 14 and the second electrode 17, respectively, and holes and electrons are recombined when a voltage is applied by the first electrode 14 and the second electrode 17. It is an area. Here, the light emitting layer 3 is formed of a material having high light emission efficiency. And as a material which comprises the light emitting layer 3, a metal oxinoid compound [8-hydroxy quinoline metal complex], a naphthalene derivative, an anthracene derivative, a diphenyl ethylene derivative, a vinylacetone derivative, a triphenylamine derivative, a butadiene derivative, a coumarin derivative, for example , Benzoxazole derivative, oxadiazole derivative, oxazole derivative, benzimidazole derivative, thiadiazole derivative, benzthiazole derivative, styryl derivative, styrylamine derivative, bisstyrylbenzene derivative, trisstyrylbenzene derivative, perylene derivative, perinone derivative, aminopyrene derivative, Pyridine derivatives, rhodamine derivatives, aquidin derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylene vinylet , Polysilane, and the like.
 電子輸送層4は、電子を発光層3まで効率良く移動させる機能を有している。ここで、電子輸送層4を構成する材料としては、例えば、有機化合物として、オキサジアゾール誘導体、トリアゾール誘導体、ベンゾキノン誘導体、ナフトキノン誘導体、アントラキノン誘導体、テトラシアノアントラキノジメタン誘導体、ジフェノキノン誘導体、フルオレノン誘導体、シロール誘導体、金属オキシノイド化合物等が挙げられる。 The electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3. Here, as a material constituting the electron transport layer 4, for example, as an organic compound, oxadiazole derivative, triazole derivative, benzoquinone derivative, naphthoquinone derivative, anthraquinone derivative, tetracyanoanthraquinodimethane derivative, diphenoquinone derivative, fluorenone derivative And silole derivatives, metal oxinoid compounds and the like.
 電子注入層5は、第2電極17と有機EL層16とのエネルギーレベルを近づけ、第2電極17から有機EL層16へ電子が注入される効率を向上させる機能を有し、この機能により、有機EL素子18の駆動電圧を下げることができる。なお、電子注入層5は、陰極バッファ層とも呼ばれる。ここで、電子注入層5を構成する材料としては、例えば、フッ化リチウム(LiF)、フッ化マグネシウム(MgF)、フッ化カルシウム(CaF)、フッ化ストロンチウム(SrF)、フッ化バリウム(BaF)のような無機アルカリ化合物、酸化アルミニウム(Al)、酸化ストロンチウム(SrO)等が挙げられる。 The electron injection layer 5 has a function of bringing the energy levels of the second electrode 17 and the organic EL layer 16 closer to each other and improving the efficiency of injecting electrons from the second electrode 17 to the organic EL layer 16. The drive voltage of the organic EL element 18 can be reduced. The electron injection layer 5 is also called a cathode buffer layer. Here, as a material constituting the electron injection layer 5, for example, lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), barium fluoride Inorganic alkali compounds such as (BaF 2 ), aluminum oxide (Al 2 O 3 ), strontium oxide (SrO) and the like can be mentioned.
 第2電極17は、図2に示すように、各有機EL層16及び隔壁15を覆って、複数のサブ画素に共通するように設けられている。また、第2電極17は、有機EL層16に電子を注入する機能を有している。また、第2電極17は、有機EL層16への電子注入効率を向上させるために、仕事関数の小さな材料で構成するのがより好ましい。ここで、第2電極17を構成する材料としては、例えば、銀(Ag)、アルミニウム(Al)、バナジウム(V)、コバルト(Co)、ニッケル(Ni)、タングステン(W)、金(Au)、カルシウム(Ca)、チタン(Ti)、イットリウム(Y)、ナトリウム(Na)、ルテニウム(Ru)、マンガン(Mn)、インジウム(In)、マグネシウム(Mg)、リチウム(Li)、イッテルビウム(Yb)、フッ化リチウム(LiF)等が挙げられる。また、第2電極17は、例えば、マグネシウム(Mg)/銅(Cu)、マグネシウム(Mg)/銀(Ag)、ナトリウム(Na)/カリウム(K)、アスタチン(At)/酸化アスタチン(AtO)、リチウム(Li)/アルミニウム(Al)、リチウム(Li)/カルシウム(Ca)/アルミニウム(Al)、フッ化リチウム(LiF)/カルシウム(Ca)/アルミニウム(Al)等の合金により形成されていてもよい。また、第2電極17は、例えば、酸化スズ(SnO)、酸化亜鉛(ZnO)、インジウムスズ酸化物(ITO)、インジウム亜鉛酸化物(IZO)等の導電性酸化物により形成されていてもよい。また、第2電極17は、上記材料からなる層を複数積層して形成されていてもよい。なお、仕事関数が小さい材料としては、例えば、マグネシウム(Mg)、リチウム(Li)、フッ化リチウム(LiF)、マグネシウム(Mg)/銅(Cu)、マグネシウム(Mg)/銀(Ag)、ナトリウム(Na)/カリウム(K)、リチウム(Li)/アルミニウム(Al)、リチウム(Li)/カルシウム(Ca)/アルミニウム(Al)、フッ化リチウム(LiF)/カルシウム(Ca)/アルミニウム(Al)等が挙げられる。なお、有機EL表示装置30aの額縁領域Fには、図4に示すように、有機EL素子18を囲むように、例えば、TFT12のソース電極及びドレイン電極と同一層に同一材料により形成され、第2電極17に接続された配線12aが設けられている。 As shown in FIG. 2, the second electrode 17 is provided so as to cover the organic EL layers 16 and the partition walls 15 and to be common to a plurality of sub-pixels. The second electrode 17 has a function of injecting electrons into the organic EL layer 16. The second electrode 17 is more preferably made of a material having a small work function in order to improve the electron injection efficiency into the organic EL layer 16. Here, as a material constituting the second electrode 17, for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And lithium fluoride (LiF). Also, the second electrode 17 may be, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxide astatine (AtO 2) And lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc. May be In addition, the second electrode 17 may be formed of, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), etc. . Further, the second electrode 17 may be formed by laminating a plurality of layers made of the above materials. As a material having a small work function, for example, magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al) Etc. In the frame area F of the organic EL display device 30a, as shown in FIG. 4, for example, the same material as the source electrode and the drain electrode of the TFT 12 is formed of the same material so as to surround the organic EL element 18, A wire 12 a connected to the second electrode 17 is provided.
 封止膜22aは、図2、図4及び図5に示すように、有機EL素子18を覆うように設けられた第1無機膜19aと、第1無機膜19a上に設けられた有機膜20と、有機膜20を覆うように設けられた第2無機膜21とを備えている。 The sealing film 22a is, as shown in FIGS. 2, 4 and 5, a first inorganic film 19a provided so as to cover the organic EL element 18, and an organic film 20 provided on the first inorganic film 19a. And a second inorganic film 21 provided to cover the organic film 20.
 第1無機膜19aは、例えば、窒化シリコン膜等の無機絶縁膜により構成されている。ここで、表示領域Dにおける第1無機膜19aの有機膜20側の表面には、図4及び図5に示すように、有機膜20となる液滴Lに対して相対的に高い濡れ性(例えば、接触角θ=10°未満、図8(a)参照)を有する高濡れ性領域Radが設けられている。また、額縁領域Fにおける第1無機膜19aの有機膜20側の表面には、図4に示すように、有機膜20となる液滴Lに対して相対的に低い濡れ性(例えば、接触角θ=10°以上、図8(b)参照)を有する低濡れ性領域Rbfが設けられている。そして、額縁領域Fの低濡れ性領域Rbfには、図6に示すように、有機膜20となる液滴Lに対して相対的に高い濡れ性を有する高濡れ性領域Rafが点状に設けられている。ここで、額縁領域Fの幅は、例えば、1mm程度であり、高濡れ性領域Rafの直径は、例えば、20μm程度であり、高濡れ性領域Rafの密度は、750000個/cm程度である。また、表示領域Dの内部の非表示領域Naにおける第1無機膜19aの有機膜20側の表面には、図5及び図7に示すように、有機膜20となる液滴Lに対して相対的に低い濡れ性を有する低濡れ性領域Rbnが設けられている。そして、非表示領域Naの低濡れ性領域Rbnには、図7に示すように、有機膜20となる液滴Lに対して相対的に高い濡れ性を有する高濡れ性領域Ranが低濡れ性領域Rbnの周縁、すなわち、表示領域Dとの境界に沿って点状に設けられている。ここで、非表示領域Naの直径は、例えば、10mm程度であり、高濡れ性領域Ranの直径は、例えば、20μm程度であり、高濡れ性領域Ranの密度は、750000個/cm程度である。なお、図6及び図7では、平面視で円形状の高濡れ性領域Rafを例示したが、高濡れ性領域Rafは、平面視で三角形や四角形等の多角形状であってもよい。具体的に高濡れ性領域Rafを平面視で三角形状に設ける場合には、三角形の頂点を表示領域D側に配置させ、三角形の底辺を表示領域Dと反対側に配置させることにより、有機膜20を構成する有機樹脂材料の堰き止め効果を向上させてもよい。さらに、濡れ性を表す指標である接触角については、JIS R3257:1999に記載された静滴法に準じて測定されるが、本実施形態の接触角の測定には、ガラス基板の代わりにCVD蒸着基板を用い、水の代わりにインク材料を用いる。 The first inorganic film 19a is made of, for example, an inorganic insulating film such as a silicon nitride film. Here, on the surface of the first inorganic film 19a on the organic film 20 side in the display region D, as shown in FIG. 4 and FIG. For example, a high wettability region Rad having a contact angle θ of less than 10 ° (see FIG. 8A) is provided. In addition, the surface of the first inorganic film 19a on the organic film 20 side in the frame region F has relatively low wettability (for example, contact angle) to the droplets L to be the organic film 20 as shown in FIG. A low wettability region Rbf having θ = 10 ° or more and see FIG. 8 (b) is provided. Then, in the low wettability region Rbf of the frame region F, as shown in FIG. 6, high wettability regions Raf having relatively high wettability to the droplets L to be the organic film 20 are provided in a dotted manner. It is done. Here, the width of the frame region F is, for example, about 1 mm, the diameter of the high wettability region Raf is, for example, about 20 μm, and the density of the high wettability region Raf is about 750000 pieces / cm 2. . Further, on the surface on the organic film 20 side of the first inorganic film 19a in the non-display area Na inside the display area D, as shown in FIG. 5 and FIG. A low wettability region Rbn having extremely low wettability is provided. Then, in the low wettability region Rbn of the non-display region Na, as shown in FIG. 7, the high wettability region Ran having relatively high wettability to the droplets L to be the organic film 20 has low wettability. It is provided along the periphery of the region Rbn, that is, along the boundary with the display region D in a point shape. Here, the diameter of the non-display area Na is, for example, about 10 mm, the diameter of the high-wettability area Ran is, for example, about 20 μm, and the density of the high-wettability area Ran is about 750,000 pieces / cm 2 . is there. Although FIGS. 6 and 7 illustrate the circular high wettability region Raf in plan view, the high wettability region Raf may have a polygonal shape such as a triangle or a square in plan view. Specifically, in the case where the high wettability region Raf is provided in a triangular shape in plan view, the organic film is formed by arranging the apex of the triangle on the display region D side and arranging the base of the triangle on the opposite side to the display region D. The damming effect of the organic resin material constituting 20 may be improved. Furthermore, the contact angle, which is an index representing the wettability, is measured according to the static drop method described in JIS R 3257: 1999, but for the measurement of the contact angle in this embodiment, CVD instead of the glass substrate is used. A vapor deposition substrate is used, and an ink material is used instead of water.
 有機膜20は、例えば、アクリレート、エポキシ、シリコーン、ポリ尿素、パリレン、ポリイミド、ポリアミド等の有機樹脂材料により構成されている。 The organic film 20 is made of, for example, an organic resin material such as acrylate, epoxy, silicone, polyurea, parylene, polyimide, or polyamide.
 第2無機膜21は、例えば、窒化シリコン膜、酸化シリコン膜、酸窒化シリコン膜等の無機絶縁膜により構成されている。 The second inorganic film 21 is made of, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film.
 上述した有機EL表示装置30aは、可撓性を有し、各サブ画素において、TFT12を介して有機EL層16の発光層3を適宜発光させることにより、画像表示を行うように構成されている。 The organic EL display device 30a described above has flexibility, and is configured to perform image display by appropriately emitting light from the light emitting layer 3 of the organic EL layer 16 through the TFT 12 in each sub-pixel. .
 次に、本実施形態の有機EL表示装置30aの製造方法について図9及び図10を用いて説明する。ここで、本実施形態の有機EL表示装置30aの製造方法は、有機EL素子形成工程(発光素子形成工程)及び封止膜形成工程を備える。なお、図10では、図6及び図7で部分的に示した第1無機膜19aを全体的に示しているが、第1無機膜19aの表面に形成された高濡れ性領域Raf及びRanの個数及び配置について簡略化しており、図9では、図10に合わせて、高濡れ性領域Rad、Raf及びRanを形成するためのマスクMの開口部の個数及び配置について簡略化している。 Next, a method of manufacturing the organic EL display device 30a according to the present embodiment will be described with reference to FIGS. Here, the method of manufacturing the organic EL display device 30a of the present embodiment includes an organic EL element forming step (a light emitting element forming step) and a sealing film forming step. In FIG. 10, the first inorganic film 19a partially shown in FIGS. 6 and 7 is entirely shown, but the high wettability regions Raf and Ran formed on the surface of the first inorganic film 19a are shown. The number and arrangement are simplified, and in FIG. 9, the number and arrangement of the openings of the mask M for forming the high wettability regions Rad, Raf and Ran are simplified in accordance with FIG.
 <有機EL素子形成工程>
 例えば、ポリイミド樹脂製のベース基板10の表面に、周知の方法を用いて、ベースコート膜11及び有機EL素子18(TFT12、平坦化膜13、第1電極14、隔壁15、有機EL層16(正孔注入層1、正孔輸送層2、発光層3、電子輸送層4、電子注入層5)、第2電極17)を形成する。
<Organic EL element formation process>
For example, on the surface of the base substrate 10 made of polyimide resin, the base coat film 11 and the organic EL element 18 (TFT 12, planarizing film 13, first electrode 14, partition 15, organic EL layer 16 (positive The hole injection layer 1, the hole transport layer 2, the light emitting layer 3, the electron transport layer 4, the electron injection layer 5), and the second electrode 17) are formed.
 <封止膜形成工程>
 まず、上記有機EL素子形成工程で形成された有機EL素子18を覆うように、例えば、窒化シリコン膜等の無機絶縁膜19をプラズマCVD法により厚さ数10nm~数μm程度に成膜した後に、図9に示すように、無機絶縁膜19の表面に、マスクMを介して、紫外線Uを照射することにより、高濡れ性領域Rad、Raf及びRan、並びに低濡れ性領域Rbf及びRbnを有する第1無機膜19aを形成する(第1無機膜形成工程)。ここで、マスクMは、例えば、ガラス基板の表面に遮光性を有するアルミニウム箔を貼り付けて形成される。また、マスクMには、図9に示すように、高濡れ性領域Rad、Raf及びRanにそれぞれ重畳ように第1開口部Ad、第2開口部Af及び第3開口部Anが形成されている。なお、マスクMにおいて、点状の第2開口部Af及び第3開口部Anは、表示領域Dとの境界に集中して形成されている。
<Sealing film formation process>
First, an inorganic insulating film 19 such as a silicon nitride film is formed to a thickness of about several tens of nm to several μm by plasma CVD to cover the organic EL element 18 formed in the organic EL element formation step. As shown in FIG. 9, the surface of the inorganic insulating film 19 is irradiated with ultraviolet rays U through the mask M to have high wettability regions Rad, Raf and Ran, and low wettability regions Rbf and Rbn. The first inorganic film 19a is formed (first inorganic film forming step). Here, the mask M is formed, for example, by bonding an aluminum foil having a light shielding property to the surface of a glass substrate. Further, as shown in FIG. 9, the mask M is provided with a first opening Ad, a second opening Af and a third opening An so as to be superimposed on the high wettability regions Rad, Raf and Ran, respectively. . In the mask M, the dot-like second opening Af and the third opening An are formed to be concentrated at the boundary with the display area D.
 続いて、第1無機膜19aが形成された基板の高濡れ性領域Radに、例えば、アクリレート等の有機樹脂材料をインクジェット法により厚さ数μm~数10μm程度になるように吐出して、有機膜20を形成する(有機膜形成工程)。ここで、第1無機膜19aにおいて、高濡れ性領域Radの周囲には、低濡れ性領域Rbfが設けられているので、有機膜20を構成する有機樹脂材料の液滴Lの額縁領域Fへの流れ込みを抑制することができる。さらに、第1無機膜19aにおいて、低濡れ性領域Rbfに高濡れ性領域Rafが点状に設けられているので、ピンニング(pinning)効果により、有機膜20を構成する有機樹脂材料の液滴Lの額縁領域Fへの流れ込みをいっそう抑制することができる。また、第1無機膜19aにおいて、非表示領域Naに低濡れ性領域Rbnが設けられているので、有機膜20を構成する有機樹脂材料の液滴Lの非表示領域Naへの流れ込みを抑制することができる。さらに、第1無機膜19aにおいて、非表示領域Naの低濡れ性領域Rbnに高濡れ性領域Ranが点状に設けられているので、ピンニング(pinning)効果により、有機膜20を構成する有機樹脂材料の液滴Lの非表示領域Naへの流れ込みをいっそう抑制することができる。 Subsequently, an organic resin material such as acrylate is discharged by an inkjet method to a thickness of several μm to several 10 μm to the high wettability region Rad of the substrate on which the first inorganic film 19a is formed. The film 20 is formed (organic film formation step). Here, in the first inorganic film 19a, the low wettability region Rbf is provided around the high wettability region Rad, so the frame region F of the droplet L of the organic resin material forming the organic film 20 is provided. Flow can be suppressed. Furthermore, in the first inorganic film 19a, since the high wettability region Raf is provided in a point shape in the low wettability region Rbf, droplets L of the organic resin material constituting the organic film 20 by the pinning effect. Flow into the frame region F can be further suppressed. Further, in the first inorganic film 19a, the low wettability region Rbn is provided in the non-display area Na, so that the flow of the droplets L of the organic resin material constituting the organic film 20 into the non-display area Na is suppressed. be able to. Furthermore, in the first inorganic film 19a, since the high wettability region Ran is provided in a dotted shape in the low wettability region Rbn of the non-display region Na, the organic resin constituting the organic film 20 is formed by the pinning effect. The flow of material droplets L into the non-display area Na can be further suppressed.
 最後に、有機膜20が形成された基板に対して、例えば、窒化シリコン膜等の無機絶縁膜をプラズマCVD法により厚さ数10nm~数μm程度に成膜して、第2無機膜21を形成することにより、第1無機膜19a、有機膜20及び第2無機膜21からなる封止膜22aを形成する(第2無機膜形成工程)。 Finally, on the substrate on which the organic film 20 is formed, for example, an inorganic insulating film such as a silicon nitride film is deposited by plasma CVD to a thickness of about several tens of nm to several μm, and the second inorganic film 21 is formed. By forming, the sealing film 22a which consists of the 1st inorganic film 19a, the organic film 20, and the 2nd inorganic film 21 is formed (2nd inorganic film formation process).
 以上のようにして、本実施形態の有機EL表示装置30aを製造することができる。なお、本実施形態では、窒化シリコン膜等の無機膜の表面に紫外光Uを照射して、高濡れ性領域Rad、Raf及びRanを有する第1無機膜19aを形成する方法を例示したが、窒化シリコン膜等の無機膜の表面に酸化シリコン膜等の他の無機膜を成膜して、第1無機膜19bを形成してもよい。具体的には、図11に示すように、まず、上記有機EL素子形成工程で有機EL素子18が形成された基板表面全体に窒化シリコン膜等の無機絶縁膜をプラズマCVD法により成膜して、無機膜19ba(低濡れ性領域Rbf)を形成する。続いて、無機膜19baが形成された基板表面に酸化シリコン膜等の無機絶縁膜をプラズマCVD法によりマスクを用いて成膜して、無機膜19bbd(高濡れ性領域Rad)及び無機膜19bbf(高濡れ性領域Raf)を形成する。その後、無機膜19bbd及び19bbfが形成された基板表面に窒化シリコン膜等の無機絶縁膜をプラズマCVD法によりマスクを用いて成膜して、無機膜19bc(低濡れ性領域Rbn)を形成する。さらに、無機膜19bcが形成された基板表面に酸化シリコン膜等の無機絶縁膜をプラズマCVD法によりマスクを用いて成膜して、無機膜19bd(高濡れ性領域Ran)を形成する。このようにして、無機膜19ba、19bbd、19bbf、19bc及び19bdを備えた第1無機膜19bを形成してもよい。 As described above, the organic EL display device 30a of the present embodiment can be manufactured. In the present embodiment, the method of forming the first inorganic film 19a having the high wettability regions Rad, Raf, and Ran by irradiating the surface of the inorganic film such as the silicon nitride film with ultraviolet light U has been exemplified. Another inorganic film such as a silicon oxide film may be formed on the surface of an inorganic film such as a silicon nitride film to form the first inorganic film 19 b. Specifically, as shown in FIG. 11, first, an inorganic insulating film such as a silicon nitride film is formed by plasma CVD over the entire surface of the substrate on which the organic EL element 18 is formed in the organic EL element formation step. , Inorganic film 19ba (low wettability region Rbf) is formed. Subsequently, an inorganic insulating film such as a silicon oxide film is formed on the surface of the substrate on which the inorganic film 19ba is formed by plasma CVD using a mask to form inorganic film 19bbd (high wettability region Rad) and inorganic film 19bbf (high wettability region Rad). The high wettability region Raf) is formed. Thereafter, an inorganic insulating film such as a silicon nitride film is formed on the surface of the substrate on which the inorganic films 19bbd and 19bbf are formed by plasma CVD using a mask to form an inorganic film 19bc (low wettability region Rbn). Further, an inorganic insulating film such as a silicon oxide film is formed on the surface of the substrate on which the inorganic film 19bc is formed by plasma CVD using a mask to form an inorganic film 19bd (high wettability region Ran). In this manner, the first inorganic film 19b may be formed with the inorganic films 19ba, 19bbd, 19bbf, 19bc and 19bd.
 以上説明したように、本実施形態の有機EL表示装置30a及びその製造方法によれば、第1無機膜19a、有機膜20及び第2無機膜21が順に積層された封止膜22aにおいて、表示領域Dにおける第1無機膜19aの有機膜側の表面には、有機膜20となる液滴Lに対して相対的に高い濡れ性を有する高濡れ性領域Radが設けられ、額縁領域Fにおける第1無機膜19aの有機膜20側の表面には、液滴Lに対して相対的に低い濡れ性を有する低濡れ性領域Rbfが設けられている。これにより、第1無機膜19aにおいて、高濡れ性領域Radの周囲に低濡れ性領域Rbfが設けられているので、封止膜形成工程の有機膜形成工程において、有機膜20を構成する有機樹脂材料の液滴Lの額縁領域Fへの流れ込みを抑制することができる。そのため、封止膜22aを構成する有機膜20の端部を精度よく形成することができ、有機EL表示装置30aの狭額縁化を図ることができる。 As described above, according to the organic EL display device 30a of the present embodiment and the method for manufacturing the same, display is performed on the sealing film 22a in which the first inorganic film 19a, the organic film 20, and the second inorganic film 21 are sequentially stacked. On the surface on the organic film side of the first inorganic film 19 a in the region D, a high wettability region Rad having relatively high wettability to the droplets L to be the organic film 20 is provided. A low wettability region Rbf having relatively low wettability to the droplet L is provided on the surface of the first inorganic film 19a on the organic film 20 side. As a result, in the first inorganic film 19a, the low wettability region Rbf is provided around the high wettability region Rad, so the organic resin forming the organic film 20 in the organic film formation step of the sealing film formation step The flow of the droplet L of the material into the frame area F can be suppressed. Therefore, the end of the organic film 20 forming the sealing film 22a can be formed with high accuracy, and the frame can be narrowed in the organic EL display device 30a.
 また、本実施形態の有機EL表示装置30a及びその製造方法によれば、第1無機膜19aにおいて、低濡れ性領域Rbfに高濡れ性領域Rafが点状に設けられているので、封止膜形成工程の有機膜形成工程において、ピンニング(pinning)効果により、有機膜20を構成する有機樹脂材料の液滴Lの額縁領域Fへの流れ込みをいっそう抑制することができる。 Further, according to the organic EL display device 30a of the present embodiment and the method of manufacturing the same, the high wettability region Raf is provided in a dotted shape in the low wettability region Rbf in the first inorganic film 19a. In the organic film formation step of the formation step, the flow of the droplets L of the organic resin material constituting the organic film 20 into the frame region F can be further suppressed by the pinning effect.
 また、本実施形態の有機EL表示装置30a及びその製造方法によれば、表示領域Dの内部に非表示領域Naが島状に設けられ、島状の非表示領域Naにおける第1無機膜19aの有機膜20側の表面には、低濡れ性領域Rbnが設けられている。これにより、第1無機膜19aの表面において、非表示領域Naに低濡れ性領域Rbnが設けられているので、封止膜形成工程の有機膜形成工程において、有機膜20を構成する有機樹脂材料の液滴Lの非表示領域Naへの流れ込みを抑制することができる。 Further, according to the organic EL display device 30a of the present embodiment and the method of manufacturing the same, the non-display area Na is provided in an island shape in the display area D, and the first inorganic film 19a in the island non-display area Na is provided. The low wettability region Rbn is provided on the surface on the organic film 20 side. As a result, the low wettability region Rbn is provided in the non-display region Na on the surface of the first inorganic film 19a. Therefore, in the organic film formation step of the sealing film formation step, the organic resin material constituting the organic film 20 The flow of the liquid droplets L into the non-display area Na can be suppressed.
 また、本実施形態の有機EL表示装置30a及びその製造方法によれば、第1無機膜19aにおいて、非表示領域Naの低濡れ性領域Rbnに高濡れ性領域Ranが点状に設けられているので、ピンニング(pinning)効果により、有機膜20を構成する有機樹脂材料の液滴Lの非表示領域Naへの流れ込みをいっそう抑制することができる。 Further, according to the organic EL display device 30a of the present embodiment and the method of manufacturing the same, in the first inorganic film 19a, the high wettability region Ran is provided in a dotted manner in the low wettability region Rbn of the non-display region Na. Therefore, the flow of the droplets L of the organic resin material constituting the organic film 20 into the non-display area Na can be further suppressed by the pinning effect.
 また、本実施形態の有機EL表示装置30a及びその製造方法によれば、第1無機膜19aとなる無機絶縁膜19の表面に紫外線Uを照射するだけで高濡れ性領域Rad、Raf及びRanが形成されるので、低い製造コストで、封止膜22aを構成する有機膜20の端部を精度よく形成して、有機EL表示装置30aの狭額縁化を図ることができる。 Further, according to the organic EL display device 30a of the present embodiment and the method of manufacturing the same, the high wettability regions Rad, Raf and Ran have high wettability simply by irradiating the surface of the inorganic insulating film 19 to be the first inorganic film 19a with ultraviolet rays U. Since it is formed, the end portion of the organic film 20 constituting the sealing film 22a can be accurately formed at low manufacturing cost, and the frame can be narrowed of the organic EL display device 30a.
 《第2の実施形態》
 図12~図15は、本発明に係る表示装置及びその製造方法の第2の実施形態を示している。ここで、図12は、本実施形態の有機EL表示装置30bの概略構成を示す平面図である。また、図13は、図12中のXIII-XIII線に沿った有機EL表示装置30bの詳細構成を示す断面図である。また、図14は、有機EL表示装置30bを構成する封止膜22bの第1無機膜19cを示す平面図である。また、図15は、有機EL表示装置30bを構成する封止膜22bの第1無機膜19cの変形例である第1無機膜19dを示す平面図である。なお、以下の実施形態において、図1~図11と同じ部分については同じ符号を付して、その詳細な説明を省略する。
Second Embodiment
12 to 15 show a second embodiment of a display device and a method of manufacturing the same according to the present invention. Here, FIG. 12 is a plan view showing a schematic configuration of the organic EL display device 30b of the present embodiment. FIG. 13 is a cross-sectional view showing the detailed configuration of the organic EL display device 30b, taken along line XIII-XIII in FIG. FIG. 14 is a plan view showing the first inorganic film 19c of the sealing film 22b which constitutes the organic EL display device 30b. FIG. 15 is a plan view showing a first inorganic film 19d which is a modification of the first inorganic film 19c of the sealing film 22b constituting the organic EL display device 30b. In the following embodiments, the same parts as those in FIGS. 1 to 11 are denoted by the same reference numerals, and detailed descriptions thereof will be omitted.
 上記第1の実施形態では、表示領域Dの内部に非表示領域Naが設けられた有機EL表示装置30aを例示したが、本実施形態では、表示領域Dの切り欠き部に非表示領域Nbが設けられた有機EL表示装置30bを例示する。 In the first embodiment, the organic EL display device 30a in which the non-display area Na is provided inside the display area D is exemplified. However, in the present embodiment, the non-display area Nb is not in the notch portion of the display area D. The organic EL display device 30b provided is illustrated.
 有機EL表示装置30bは、図12に示すように、平面視で各角部がR形状に面取りされた略矩形状に設けられている。また、有機EL表示装置30bでは、図12に示すように、画像表示を行う表示領域Dが略矩形状に規定され、表示領域Dの周囲に額縁領域Fが枠状に規定されている。ここで、表示領域Dは、図12に示すように、周端の一部を半円状に切り欠いた形状に設けられ、その半円状に切り欠いた部分には、例えば、カメラや指紋センサー等を配置させる非表示領域Nbが額縁領域Fに隣り合うように設けられている。 As shown in FIG. 12, the organic EL display device 30b is provided in a substantially rectangular shape in which each corner is chamfered in an R shape in a plan view. Further, in the organic EL display device 30b, as shown in FIG. 12, a display area D for image display is defined in a substantially rectangular shape, and a frame area F is defined in a frame shape around the display area D. Here, as shown in FIG. 12, the display area D is provided in a shape in which a part of the peripheral edge is cut in a semicircular shape, and a camera or a fingerprint is formed in the semicircular cut portion, for example. A non-display area Nb in which a sensor or the like is arranged is provided adjacent to the frame area F.
 有機EL表示装置30bは、図13に示すように、ベース基板10と、ベース基板10上にベースコート膜11を介して表示領域Dに発光素子として設けられた有機EL素子18と、有機EL素子18を覆うように表示領域D、非表示領域Nb及び額縁領域Fに設けられた封止膜22bとを備えている。 As shown in FIG. 13, the organic EL display device 30 b includes a base substrate 10, an organic EL element 18 provided on the base substrate 10 as a light emitting element in the display region D via the base coat film 11, and an organic EL element 18. And a sealing film 22 b provided in the display area D, the non-display area Nb, and the frame area F so as to cover the display area D.
 封止膜22bは、図13に示すように、有機EL素子18を覆うように設けられた第1無機膜19cと、第1無機膜19c上に設けられた有機膜20と、有機膜20を覆うように設けられた第2無機膜21とを備えている。 As shown in FIG. 13, the sealing film 22 b includes a first inorganic film 19 c provided so as to cover the organic EL element 18, an organic film 20 provided on the first inorganic film 19 c, and an organic film 20. And a second inorganic film 21 provided so as to cover it.
 第1無機膜19cは、例えば、窒化シリコン膜等の無機絶縁膜により構成されている。ここで、表示領域Dにおける第1無機膜19cの有機膜20側の表面には、図13及び図14に示すように、有機膜20となる液滴Lに対して相対的に高い濡れ性を有する高濡れ性領域Radが設けられている。また、額縁領域Fにおける第1無機膜19cの有機膜20側の表面には、図13及び図14に示すように、有機膜20となる液滴Lに対して相対的に低い濡れ性を有する低濡れ性領域Rbfが設けられている。そして、額縁領域Fの低濡れ性領域Rbfには、図14に示すように、有機膜20となる液滴Lに対して相対的に高い濡れ性を有する高濡れ性領域Rafが点状に設けられている。また、表示領域Dの切り欠き部の非表示領域Nbにおける第1無機膜19cの有機膜20側の表面には、図14に示すように、有機膜20となる液滴Lに対して相対的に低い濡れ性を有する低濡れ性領域Rbnが設けられている。そして、非表示領域Nbの低濡れ性領域Rbnには、図14に示すように、有機膜20となる液滴Lに対して相対的に高い濡れ性を有する高濡れ性領域Ranが低濡れ性領域Rbnの周縁、すなわち、表示領域Dとの境界に沿って点状に設けられている。 The first inorganic film 19c is made of, for example, an inorganic insulating film such as a silicon nitride film. Here, on the surface of the first inorganic film 19c on the organic film 20 side in the display region D, as shown in FIG. 13 and FIG. A high wettability region Rad having is provided. Further, the surface of the first inorganic film 19c on the organic film 20 side in the frame region F has relatively low wettability to the droplets L to be the organic film 20 as shown in FIGS. 13 and 14. A low wettability region Rbf is provided. Then, in the low wettability region Rbf of the frame region F, as shown in FIG. 14, high wettability regions Raf having relatively high wettability to the droplets L to be the organic film 20 are provided in a dotted manner. It is done. In addition, on the surface of the first inorganic film 19c on the organic film 20 side in the non-display area Nb of the notched portion of the display area D, as shown in FIG. And a low wettability region Rbn having low wettability. Then, in the low wettability region Rbn of the non-display region Nb, as shown in FIG. 14, the high wettability region Ran having relatively high wettability to the droplets L to be the organic film 20 has low wettability. It is provided along the periphery of the region Rbn, that is, along the boundary with the display region D in a point shape.
 上述した有機EL表示装置30bは、可撓性を有し、各サブ画素において、TFT12を介して有機EL層16の発光層3を適宜発光させることにより、画像表示を行うように構成されている。 The organic EL display device 30b described above has flexibility, and is configured to perform image display by appropriately emitting light from the light emitting layer 3 of the organic EL layer 16 through the TFT 12 in each sub-pixel. .
 また、有機EL表示装置30bは、上記第1の実施形態で説明した有機EL表示装置30aの製造方法において、例えば、紫外線Uを照射する領域を変更して、非表示領域Nbの低濡れ性領域Rbn及び高濡れ性領域Ranを配置することにより、製造することができる。なお、本実施形態では、窒化シリコン膜等の無機膜の表面に紫外光Uを照射して、高濡れ性領域Rad、Raf及びRanを有する第1無機膜19cを形成する方法を例示したが、窒化シリコン膜等の無機膜の表面に酸化シリコン膜等の他の無機膜を成膜して、第1無機膜19dを形成してもよい。具体的には、図15に示すように、まず、上記有機EL素子形成工程で有機EL素子18が形成された基板表面全体に窒化シリコン膜等の無機絶縁膜をプラズマCVD法により成膜して、無機膜19da(低濡れ性領域Rbf及びRbn)を形成する。その後、無機膜19daが形成された基板表面に酸化シリコン膜等の無機絶縁膜をプラズマCVD法によりマスクを用いて成膜して、無機膜19dbd(高濡れ性領域Rad)、無機膜19dbf(高濡れ性領域Raf)及び無機膜19dbn(高濡れ性領域Ran)を形成する。このようにして、無機膜19da、19dbd、19dbf及び19bbnを備えた第1無機膜19dを形成してもよい。 Further, in the method of manufacturing the organic EL display device 30a described in the first embodiment, the organic EL display device 30b changes the region irradiated with the ultraviolet light U, for example, to reduce the low wettability region of the non-display region Nb. It can be manufactured by arranging Rbn and the high wettability region Ran. In the present embodiment, the method of forming the first inorganic film 19c having the high wettability regions Rad, Raf, and Ran by irradiating the surface of the inorganic film such as the silicon nitride film with the ultraviolet light U is illustrated. Another inorganic film such as a silicon oxide film may be formed on the surface of an inorganic film such as a silicon nitride film to form the first inorganic film 19 d. Specifically, as shown in FIG. 15, first, an inorganic insulating film such as a silicon nitride film is formed by plasma CVD over the entire surface of the substrate on which the organic EL element 18 is formed in the organic EL element forming step. , The inorganic film 19da (low wettability regions Rbf and Rbn) are formed. Thereafter, an inorganic insulating film such as a silicon oxide film or the like is formed on the substrate surface on which the inorganic film 19da is formed by plasma CVD using a mask to form an inorganic film 19dbd (high wettability region Rad), inorganic film 19dbf (high The wettability region Raf) and the inorganic film 19 dbn (high wettability region Ran) are formed. In this manner, the first inorganic film 19d provided with the inorganic films 19da, 19dbd, 19dbf and 19bbn may be formed.
 以上説明したように、本実施形態の有機EL表示装置30b及びその製造方法によれば、第1無機膜19c、有機膜20及び第2無機膜21が順に積層された封止膜22bにおいて、表示領域Dにおける第1無機膜19cの有機膜側の表面には、有機膜20となる液滴Lに対して相対的に高い濡れ性を有する高濡れ性領域Radが設けられ、額縁領域Fにおける第1無機膜19cの有機膜20側の表面には、液滴Lに対して相対的に低い濡れ性を有する低濡れ性領域Rbfが設けられている。これにより、第1無機膜19cにおいて、高濡れ性領域Radの周囲に低濡れ性領域Rbfが設けられているので、封止膜形成工程の有機膜形成工程において、有機膜20を構成する有機樹脂材料の液滴Lの額縁領域Fへの流れ込みを抑制することができる。そのため、封止膜22bを構成する有機膜20の端部を精度よく形成することができ、有機EL表示装置30bの狭額縁化を図ることができる。 As described above, according to the organic EL display device 30b of the present embodiment and the method of manufacturing the same, display is performed on the sealing film 22b in which the first inorganic film 19c, the organic film 20, and the second inorganic film 21 are sequentially stacked. On the surface on the organic film side of the first inorganic film 19c in the region D, a high wettability region Rad having relatively high wettability to the droplets L to be the organic film 20 is provided. A low wettability region Rbf having relatively low wettability to the droplet L is provided on the surface of the first inorganic film 19c on the organic film 20 side. As a result, in the first inorganic film 19c, the low wettability region Rbf is provided around the high wettability region Rad, so the organic resin forming the organic film 20 in the organic film formation step of the sealing film formation step The flow of the droplet L of the material into the frame area F can be suppressed. Therefore, the end of the organic film 20 forming the sealing film 22b can be formed with high accuracy, and the frame can be narrowed in the organic EL display device 30b.
 また、本実施形態の有機EL表示装置30b及びその製造方法によれば、第1無機膜19cにおいて、低濡れ性領域Rbfに高濡れ性領域Rafが点状に設けられているので、封止膜形成工程の有機膜形成工程において、ピンニング(pinning)効果により、有機膜20を構成する有機樹脂材料の液滴Lの額縁領域Fへの流れ込みをいっそう抑制することができる。 Further, according to the organic EL display device 30b of the present embodiment and the method of manufacturing the same, the high wettability region Raf is provided in a point shape in the low wettability region Rbf in the first inorganic film 19c. In the organic film formation step of the formation step, the flow of the droplets L of the organic resin material constituting the organic film 20 into the frame region F can be further suppressed by the pinning effect.
 また、本実施形態の有機EL表示装置30b及びその製造方法によれば、表示領域Dの切り欠き部に非表示領域Nbが設けられ、非表示領域Nbにおける第1無機膜19cの有機膜20側の表面には、低濡れ性領域Rbnが設けられている。これにより、第1無機膜19cの表面において、非表示領域Nbに低濡れ性領域Rbnが設けられているので、封止膜形成工程の有機膜形成工程において、有機膜20を構成する有機樹脂材料の液滴Lの非表示領域Nbへの流れ込みを抑制することができる。 Further, according to the organic EL display device 30b of the present embodiment and the method of manufacturing the same, the non-display area Nb is provided in the notched portion of the display area D, and the organic film 20 side of the first inorganic film 19c in the non-display area Nb. The low wettability region Rbn is provided on the surface of. Thus, the low wettability region Rbn is provided in the non-display region Nb on the surface of the first inorganic film 19c, so that the organic resin material constituting the organic film 20 in the organic film formation step of the sealing film formation step. The flow of the liquid droplet L into the non-display area Nb can be suppressed.
 また、本実施形態の有機EL表示装置30b及びその製造方法によれば、第1無機膜19cにおいて、非表示領域Nbの低濡れ性領域Rbnに高濡れ性領域Ranが点状に設けられているので、ピンニング(pinning)効果により、有機膜20を構成する有機樹脂材料の液滴Lの非表示領域Nbへの流れ込みをいっそう抑制することができる。 Further, according to the organic EL display device 30b of the present embodiment and the method of manufacturing the same, in the first inorganic film 19c, the high wettability region Ran is provided in a dotted shape in the low wettability region Rbn of the non-display region Nb. Therefore, the flow of the droplets L of the organic resin material constituting the organic film 20 into the non-display area Nb can be further suppressed by the pinning effect.
 また、本実施形態の有機EL表示装置30b及びその製造方法によれば、第1無機膜19cとなる無機絶縁膜19の表面に紫外線Uを照射するだけで高濡れ性領域Rad、Raf及びRanが形成されるので、低い製造コストで、封止膜22bを構成する有機膜20の端部を精度よく形成して、有機EL表示装置30bの狭額縁化を図ることができる。 Further, according to the organic EL display device 30b of the present embodiment and the method of manufacturing the same, the high wettability regions Rad, Raf and Ran have high wettability only by irradiating the surface of the inorganic insulating film 19 to be the first inorganic film 19c with ultraviolet rays U. Since it is formed, the end portion of the organic film 20 constituting the sealing film 22b can be accurately formed at low manufacturing cost, and the frame can be narrowed of the organic EL display device 30b.
 《その他の実施形態》
 上記第1の実施形態では、表示領域Dの内部に非表示領域Naが設けられた有機EL表示装置30aを例示し、上記第2の実施形態では、表示領域Dの切り欠き部に非表示領域Nbが設けられた有機EL表示装置30bを例示したが、本発明は、表示領域Dの内部及び切り欠き部に非表示領域Na及びNbが設けられた有機EL表示装置にも適用することができる。
<< Other Embodiments >>
In the first embodiment, the organic EL display device 30a in which the non-display area Na is provided inside the display area D is exemplified, and in the second embodiment, the non-display area is not provided in the notched portion of the display area D. Although the organic EL display device 30b provided with Nb is illustrated, the present invention can also be applied to an organic EL display device provided with non-display regions Na and Nb in the display region D and notches. .
 上記各実施形態では、表示装置として有機EL表示装置を例示したが、本発明は、電流によって駆動される複数の発光素子を備えた表示装置、例えば、量子ドット含有層を用いた発光素子であるQLED(Quantum-dot light emitting diode)を備えた表示装置に適用することができる。 Although the organic EL display device is exemplified as the display device in each of the above embodiments, the present invention is a display device provided with a plurality of light emitting elements driven by current, for example, a light emitting element using a quantum dot containing layer The present invention can be applied to a display device provided with a QLED (Quantum-dot light emitting diode).
 また、上記各実施形態では、正孔注入層、正孔輸送層、発光層、電子輸送層及び電子注入層の5層積層構造の有機EL層を例示したが、有機EL層は、例えば、正孔注入層兼正孔輸送層、発光層、及び電子輸送層兼電子注入層の3層積層構造であってもよい。 In each of the above embodiments, the organic EL layer having a five-layer laminated structure of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer is exemplified. It may be a three-layer laminated structure of a hole injection layer and hole transport layer, a light emitting layer, and an electron transport layer and electron injection layer.
 また、上記各実施形態では、第1電極を陽極とし、第2電極を陰極とした有機EL表示装置を例示したが、本発明は、有機EL層の積層構造を反転させ、第1電極を陰極とし、第2電極を陽極とした有機EL表示装置にも適用することができる。 In each of the above-described embodiments, the organic EL display device is exemplified in which the first electrode is an anode and the second electrode is a cathode. However, in the present invention, the laminated structure of the organic EL layer is reversed and the first electrode is a cathode. The present invention can also be applied to an organic EL display device in which the second electrode is an anode.
 また、上記各実施形態では、第1電極に接続されたTFTの電極をドレイン電極とした有機EL表示装置を例示したが、本発明は、第1電極に接続されたTFTの電極をソース電極と呼ぶ有機EL表示装置にも適用することができる。 In each of the above embodiments, the organic EL display device in which the electrode of the TFT connected to the first electrode is the drain electrode is exemplified. However, in the present invention, the electrode of the TFT connected to the first electrode is the source electrode The present invention can also be applied to an organic EL display device to be called.
 以上説明したように、本発明は、フレキシブルな表示装置について有用である。 As described above, the present invention is useful for flexible display devices.
Af  第2開口部
An  第3開口部
D   表示領域
F   額縁領域
L   液滴
M   マスク
Na,Nb    非表示領域
Rad,Raf,Ran  高濡れ性領域
Rbf,Rbn  低濡れ性領域
U   紫外線
10   ベース基板
18  有機EL素子(発光素子)
19a~19d  第1無機膜
20  有機膜
21  第2無機膜
22a,22b  封止膜
30a,30b  有機EL表示装置
Af Second opening An Third opening D Display area F Frame area L Droplet M Mask Na, Nb Non-display area Rad, Raf, Ran High wettability area Rbf, Rbn Low wettability area U Ultraviolet ray 10 Base substrate 18 Organic substrate EL element (light emitting element)
19a to 19d first inorganic film 20 organic film 21 second inorganic film 22a, 22b sealing film 30a, 30b organic EL display device

Claims (14)

  1.  画像表示を行う表示領域、及び該表示領域の周囲に額縁領域が規定されたベース基板と、
     上記ベース基板の上記表示領域に設けられた発光素子と、
     上記発光素子を覆うように上記表示領域及び額縁領域に設けられ、第1無機膜、有機膜及び第2無機膜が順に積層された封止膜とを備えた表示装置であって、
     上記表示領域における上記第1無機膜の上記有機膜側の表面には、上記有機膜となる液滴に対して相対的に高い濡れ性を有する高濡れ性領域が設けられ、
     上記額縁領域における上記第1無機膜の上記有機膜側の表面には、上記液滴に対して相対的に低い濡れ性を有する低濡れ性領域が設けられていることを特徴とする表示装置。
    A display area for displaying an image, and a base substrate having a frame area defined around the display area;
    A light emitting element provided in the display area of the base substrate;
    A display device comprising: a sealing film provided in the display area and the frame area so as to cover the light emitting element, and in which a first inorganic film, an organic film, and a second inorganic film are sequentially stacked.
    On the surface on the organic film side of the first inorganic film in the display region, a high wettability region having relatively high wettability to the droplet to be the organic film is provided,
    A display device characterized in that a low wettability region having relatively low wettability to the droplet is provided on the surface of the first inorganic film on the organic film side in the frame region.
  2.  請求項1に記載された表示装置において、
     上記表示領域は、周端の一部を切り欠いた形状に形成され、該切り欠いた部分には、上記額縁領域に隣り合うように非表示領域が設けられ、
     上記額縁領域に隣り合う非表示領域における上記第1無機膜の上記有機膜側の表面には、上記低濡れ性領域が設けられていることを特徴とする表示装置。
    In the display device according to claim 1,
    The display area is formed in a shape in which a part of the peripheral edge is cut away, and a non-display area is provided in the cutout area adjacent to the frame area.
    A display device characterized in that the low wettability region is provided on the surface on the organic film side of the first inorganic film in the non-display region adjacent to the frame region.
  3.  請求項1又は2に記載された表示装置において、
     上記表示領域の内部には、非表示領域が島状に設けられ、
     上記島状の非表示領域における上記第1無機膜の上記有機膜側の表面には、上記低濡れ性領域が設けられていることを特徴とする表示装置。
    In the display device according to claim 1 or 2,
    A non-display area is provided in an island shape inside the display area,
    A display device characterized in that the low wettability region is provided on the surface on the organic film side of the first inorganic film in the island-shaped non-display region.
  4.  請求項1~3の何れか1つに記載された表示装置において、
     上記低濡れ性領域には、上記表示領域との境界に沿って複数の上記高濡れ性領域が点状に設けられていることを特徴とする表示装置。
    The display device according to any one of claims 1 to 3
    A display device characterized in that a plurality of the high wettability regions are provided in a dotted shape along the boundary with the display region in the low wettability region.
  5.  請求項2又は3に記載された表示装置において、
     上記非表示領域における上記低濡れ性領域には、上記表示領域との境界に沿って複数の上記高濡れ性領域が点状に設けられていることを特徴とする表示装置。
    In the display device according to claim 2 or 3,
    A display device characterized in that a plurality of the high wettability regions are provided in a dotted manner along the boundary with the display region in the low wettability region in the non-display region.
  6.  請求項5に記載された表示装置において、
     上記点状の高濡れ性領域は、上記表示領域との境界に集中して設けられていることを特徴とする表示装置。
    In the display device according to claim 5,
    A display device characterized in that the dotted high wettability region is provided in a concentrated manner at the boundary with the display region.
  7.  請求項1~6の何れか1つに記載された表示装置において、
     上記高濡れ性領域は、紫外線が照射されて形成されていることを特徴とする表示装置。
    The display device according to any one of claims 1 to 6
    The display device characterized in that the high wettability region is formed by being irradiated with ultraviolet light.
  8.  請求項1~6の何れか1つに記載された表示装置において、
     上記高濡れ性領域には、上記第1無機膜と異なる他の無機膜が設けられていることを特徴とする表示装置。
    The display device according to any one of claims 1 to 6
    A display device characterized in that another inorganic film different from the first inorganic film is provided in the high wettability region.
  9.  請求項1~8の何れか1つに記載された表示装置において、
     上記発光素子は、有機EL素子であることを特徴とする表示装置。
    The display device according to any one of claims 1 to 8
    The display device, wherein the light emitting element is an organic EL element.
  10.  画像表示を行う表示領域、及び該表示領域の周囲に額縁領域が規定されたベース基板の該表示領域に発光素子を形成する発光素子形成工程と、
     上記発光素子を覆うように上記表示領域及び額縁領域に封止膜を形成する封止膜形成工程とを備える表示装置の製造方法であって、
     上記封止膜形成工程は、
     上記発光素子を覆うように第1無機膜を形成する第1無機膜形成工程と、
     上記第1無機膜上に有機膜をインクジェット法により塗布して形成する有機膜形成工程と、
     上記有機膜を覆うように第2無機膜を形成する第2無機膜形成工程とを備え、
     上記第1無機膜形成工程では、上記表示領域における上記第1無機膜の上記有機膜側の表面に上記有機膜となる液滴に対して相対的に高い濡れ性を有する高濡れ性領域を形成し、上記額縁領域における上記第1無機膜の上記有機膜側の表面に上記液滴に対して相対的に低い濡れ性を有する低濡れ性領域を形成することを特徴とする表示装置の製造方法。
    A display area for displaying an image, and a light emitting element forming process for forming a light emitting element in the display area of the base substrate in which a frame area is defined around the display area;
    And a sealing film forming step of forming a sealing film on the display area and the frame area so as to cover the light emitting element,
    The sealing film forming step is
    A first inorganic film forming step of forming a first inorganic film to cover the light emitting element;
    An organic film forming step of forming an organic film by applying the organic film on the first inorganic film by an inkjet method;
    A second inorganic film forming step of forming a second inorganic film so as to cover the organic film;
    In the first inorganic film forming step, a high wettability region having relatively high wettability to the droplets to be the organic film is formed on the surface on the organic film side of the first inorganic film in the display region. And forming a low wettability region having relatively low wettability to the liquid droplets on the surface of the first inorganic film on the organic film side in the frame region. .
  11.  請求項10に記載された表示装置の製造方法において、
     上記第1無機膜形成工程では、上記第1無機膜の表面に紫外線を照射することにより上記高濡れ性領域を形成し、上記第1無機膜の表面に紫外線を照射しないことにより上記低濡れ性領域を形成することを特徴とする表示装置の製造方法。
    In the method of manufacturing a display device according to claim 10,
    In the first inorganic film forming step, the high wettability region is formed by irradiating the surface of the first inorganic film with ultraviolet light, and the low wettability is obtained by not irradiating the surface of the first inorganic film with ultraviolet light. A method of manufacturing a display device, comprising forming an area.
  12.  請求項11に記載された表示装置の製造方法において、
     上記表示領域は、周端の一部を切り欠いた形状に形成され、該切り欠いた部分には、上記額縁領域に隣り合うように非表示領域が設けられ、及び/又は、上記表示領域の内部には、非表示領域が島状に設けられ、
     上記非表示領域における上記第1無機膜の上記有機膜側の表面には、上記低濡れ性領域が設けられ、該低濡れ性領域には、上記表示領域との境界に沿って複数の上記高濡れ性領域が点状に設けられており、
     上記第1無機膜形成工程では、上記非表示領域における上記高濡れ性領域に対応して、上記紫外線を透過させる開口部が上記表示領域との境界に集中して形成されたマスクを用いて、上記紫外線を照射することを特徴とする表示装置の製造方法。
    In the method of manufacturing a display device according to claim 11,
    The display area is formed in a shape in which a part of the peripheral edge is cut away, and a non-display area is provided in the cutout area so as to be adjacent to the frame area and / or In the inside, a non-display area is provided in an island shape,
    The low wettability region is provided on the surface on the organic film side of the first inorganic film in the non-display region, and the low wettability region has a plurality of high heights along the boundary with the display region. Wettable areas are provided in the form of dots,
    In the first inorganic film forming step, a mask is used in which the openings that transmit the ultraviolet light are concentrated at the boundary with the display area, corresponding to the high wettability area in the non-display area. A method of manufacturing a display device comprising irradiating the ultraviolet light.
  13.  請求項10に記載された表示装置の製造方法において、
     上記第1無機膜形成工程では、上記第1無機膜の表面に該第1無機膜と異なる他の無機膜を形成することにより上記高濡れ性領域を形成し、該他の無機膜から露出する上記第1無機膜の表面により上記低濡れ性領域を形成することを特徴とする表示装置の製造方法。
    In the method of manufacturing a display device according to claim 10,
    In the first inorganic film forming step, the high wettability region is formed by forming another inorganic film different from the first inorganic film on the surface of the first inorganic film, and exposed from the other inorganic film A method of manufacturing a display device, wherein the low wettability region is formed by the surface of the first inorganic film.
  14.  請求項10~13の何れか1つに記載された表示装置の製造方法において、
     上記発光素子は、有機EL素子であることを特徴とする表示装置の製造方法。
    A method of manufacturing a display device according to any one of claims 10 to 13,
    The method for manufacturing a display device, wherein the light emitting element is an organic EL element.
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