WO2019080333A1 - Method for forming holes in functional layer and display device - Google Patents

Method for forming holes in functional layer and display device

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Publication number
WO2019080333A1
WO2019080333A1 PCT/CN2017/117762 CN2017117762W WO2019080333A1 WO 2019080333 A1 WO2019080333 A1 WO 2019080333A1 CN 2017117762 W CN2017117762 W CN 2017117762W WO 2019080333 A1 WO2019080333 A1 WO 2019080333A1
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WO
WIPO (PCT)
Prior art keywords
region
functional layer
hole
layer
forming
Prior art date
Application number
PCT/CN2017/117762
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French (fr)
Chinese (zh)
Inventor
李唐求
赵瑜
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Publication of WO2019080333A1 publication Critical patent/WO2019080333A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for opening a functional layer and a display device.
  • the existing display panel includes a plurality of functional layer structures, wherein the functional layer may generally include a metal layer, a semiconductor layer, an organic layer, an inorganic layer, and the like, such as an insulating layer formed by S i O x or S i N x .
  • holes are typically formed in these functional layers to effect connection between functional layers, electrodes or wires.
  • holes In actual operation, in the hole production of a certain layer, there may be several holes of different depths, and different pattern processes are required due to different depths, and the manufacturing process is complicated.
  • the technical problem to be solved by the present invention is to provide a method for opening a functional layer and a display device capable of performing multiple etching processes on a functional layer in a single photoresist to form a plurality of different depths. Holes save process and increase production efficiency.
  • a technical solution adopted by the present invention is to provide a method for opening a functional layer, the functional layer being an insulating layer in the array substrate in the display device, the method comprising: S1, coating on the functional layer a photoresist layer; S2, exposing the photoresist layer with a first mask to form at least one type of penetration region on the photoresist layer; wherein the through region is a region on the photoresist layer exposing the functional layer; S3, The functional layer is etched to form via holes on the functional layer corresponding to the through-region; S4, the second photomask is used to cover the photoresist layer for exposure to form a new type of through-region on the photoresist layer; S5, The functional layer is etched to form new vias on the functional layer corresponding to the new type of through-region, and the depth of the via formed before the etching is increased; at least one of the above-mentioned S4-S5 is performed, To form at least two vias having different
  • a technical solution adopted by the present invention is to provide a method for opening a functional layer, the method comprising: S1, coating a photoresist layer on the functional layer; S2, forming at least on the photoresist layer a type of penetrating region; wherein the penetrating region is a region on the photoresist layer exposing the functional layer; S3, etching the functional layer to form a via hole on the functional layer corresponding to the penetrating region; S4, forming on the photoresist layer a new type of penetration region; S5, etching the functional layer to form new vias on the functional layer corresponding to the new type of through-region, and increasing the depth of the via formed before the etching Large; the above S4-S5 is performed at least once to form at least two vias having different depths.
  • another technical solution adopted by the present invention is to provide an array substrate, the array substrate includes an insulating layer, and the insulating layer includes at least two via holes having different depths, wherein at least two depths are different
  • the via holes were produced by the above method.
  • another technical solution adopted by the present invention is to provide a display device including an array substrate, which is an array substrate as above.
  • the method for opening the functional layer of the present invention comprises: S1, coating a photoresist layer on the functional layer; S2, forming at least one type of through-hole on the photoresist layer. a region; wherein the through region is a region on the photoresist layer exposing the functional layer; S3, etching the functional layer to form a via hole on the functional layer corresponding to the through region; S4, forming a new class on the photoresist layer a penetration region; S5, etching the functional layer to form a new via on a functional layer corresponding to a new type of through-region, and increasing the depth of the via formed before the etching;
  • S4-S5 is performed once to form at least two via holes having different depths.
  • the functional layer can be etched multiple times with only one photoresist to form a plurality of vias having different depths, which saves the process flow and improves the production efficiency.
  • FIG. 1 is a schematic flow chart of an embodiment of a method for opening a functional layer according to the present invention
  • FIG. 2 is a schematic flow chart of another embodiment of a method for opening a functional layer according to the present invention.
  • 3-8 are schematic diagrams showing a process flow of another embodiment of a method for opening a functional layer according to the present invention.
  • FIG. 9 is a schematic flow chart of still another embodiment of a method for opening a functional layer according to the present invention.
  • FIG. 10 to FIG. 15 are schematic flow charts showing still another embodiment of the method for opening a functional layer according to the present invention.
  • 16 is a schematic structural view of an embodiment of an array substrate provided by the present invention.
  • FIG. 17 is a schematic structural view of an embodiment of a display device provided by the present invention.
  • references to "an embodiment” herein mean that a particular feature, structure, or characteristic described in connection with the embodiments can be included in at least one embodiment of the invention.
  • the appearances of the phrases in various places in the specification are not necessarily referring to the same embodiments, and are not exclusive or alternative embodiments that are mutually exclusive. Those skilled in the art will understand and implicitly understand that the embodiments described herein can be combined with other embodiments.
  • FIG. 1 is a schematic flow chart of an embodiment of a method for opening a functional layer according to the present disclosure. The method includes:
  • the functional layer may be a metal layer, an organic layer or an inorganic layer in the array substrate.
  • the metal layer may be an alloy of one or more metals of Pt, Ru, Au, Ag, Mo, Cr, Al, Ta, Ti or W, and the organic layer is made of an organic material, and the inorganic layer may be Specifically, it is a passivation layer or an insulating layer such as S i O x or S i N x .
  • the photoresist is also called photoresist or photoresist, and there are two kinds of photoresists, positive photoresist and negative photoresist.
  • the forward photoresist is a kind of photoresist, and the portion which is irradiated to the light is dissolved in the photoresist developing solution, and the portion which is not irradiated with light is not dissolved in the photoresist developing solution.
  • the negative photoresist is a kind of photoresist, and the portion which is irradiated to the light is not dissolved in the photoresist developing solution, and the portion which is not irradiated with light is dissolved in the photoresist developing solution.
  • the types of the functional layer and the photoresist layer are not limited.
  • the through region is a region on the photoresist layer where the functional layer is exposed.
  • the through region can be formed by exposure development.
  • a reticle is provided (the reticle is provided with a light-transmissive hole) to cover the photoresist, and the illuminating illuminator is irradiated with light, wherein the light passes through a transparent hole in the reticle to expose a circular area on the photoresist.
  • a developer is coated on the photoresist to peel off the photoresist of the exposed region, and finally the through region is formed.
  • the functional layer is etched by using the above-described photoresist layer having a through region as a mask to form via holes in a region corresponding to the through region.
  • dry etching and wet etching can be employed, and are not limited herein.
  • S15 etching the functional layer to form new vias on the functional layer corresponding to the new type of through-region, and increasing the depth of the via formed before the etching.
  • the above S14-S15 is performed at least once to form at least two via holes having different depths.
  • step S15 since one type of penetration region and a new type of penetration region are located on the same layer of photoresist, when etching is performed in step S15, the via hole formed in step S13 is etched a second time, which will deepen. The depth of the via hole is formed in step S13, so that at least two via holes having different depths are formed.
  • step S14 and step S15 may be repeated a plurality of times, so that a plurality of through regions may be formed on the photoresist layer, and each etching may be performed before etching.
  • the holes are etched again to further deepen the depth to form a plurality of vias having different depths.
  • the method for opening a functional layer of the embodiment includes: S1, coating a photoresist layer on the functional layer; S2, forming at least one type of penetration region on the photoresist layer; wherein the through region is light a region on the resist layer exposing the functional layer; S3, etching the functional layer to form a via hole on the functional layer corresponding to the through region; S4, forming a new type of through region on the photoresist layer; S5, function
  • the layer is etched to form new vias on the functional layer corresponding to the new type of through-region, and the depth of the via formed before the etching is increased; at least one of the above S4-S5 is performed to At least two vias having different depths are formed.
  • the functional layer can be etched multiple times with only one photoresist to form a plurality of vias having different depths, which saves the process flow and improves the production efficiency.
  • FIG. 2 is a schematic flow chart of another embodiment of a method for opening a functional layer according to the present disclosure.
  • the method includes:
  • the photoresist layer 30 and the functional layer 40 are included.
  • the first through-region 31 is formed by exposure and development on the photoresist layer 30 by using the first mask; wherein the first mask includes a first light-transmissive hole, and the first light-transmissive hole corresponds to the first through-region 31.
  • the functional layer 40 is first etched to form a first via 41 on the functional layer corresponding to the first through region 31.
  • a second through mask is formed on the photoresist layer 30 by exposure and development to form a second through region 32, and the width of the first through region 31 is increased; wherein the second mask includes a second light transmission hole corresponding to the first through hole 31, a third light transmission hole corresponding to the second through hole 32, and a width of the second light transmission hole and the third light transmission hole are sequentially decreased
  • the width of the second light transmission hole is larger than the first light transmission hole.
  • S25 performing a second etching on the functional layer to form a second via hole on the functional layer corresponding to the second through region, and increasing the width and depth of the first via hole.
  • the functional layer 40 is etched a second time to form a second via 42 on the functional layer corresponding to the second through region 32, and the width and depth of the first via 41 are made. Increase.
  • S26 forming a third through region on the photoresist layer and increasing a width of the first through region and the second through region.
  • a third through mask is formed on the photoresist layer 30 by exposure and development to form a third through region 33, and the widths of the first through region 31 and the second through region 32 are increased;
  • the three masks include a fourth light transmission hole, a fifth light transmission hole and a sixth light transmission hole, the fourth light transmission hole corresponds to the first penetration area 31, and the fifth light transmission hole corresponds to the second penetration area 2, the sixth transmission The light hole corresponds to the third through hole 33, and the widths of the fourth light transmission hole, the fifth light transmission hole and the sixth light transmission hole are sequentially decreased, and the width of the fourth light transmission hole is larger than the second light transmission hole, and the fifth light transmission hole The width is larger than the third light transmission hole.
  • the functional layer 40 is etched a third time to form a third via 43 on the functional layer corresponding to the third through region 33, and the first via 41 and the second pass are made.
  • the width and depth of the holes 42 are increased to form three vias having different widths and depths.
  • the first light transmission hole of the first mask may have a diameter of 1 ⁇ m
  • the second light transmission hole of the second mask may have a diameter of 2 ⁇ m
  • the third light transmission may be 1 ⁇ m
  • the diameter of the fourth light transmission hole of the third mask may be 3 ⁇ m
  • the diameter of the fifth light transmission hole may be 2 ⁇ m
  • the diameter of the sixth light transmission hole may be 1 ⁇ m.
  • FIG. 9 is a schematic flowchart diagram of still another embodiment of a method for opening a functional layer according to the present disclosure, where the method includes:
  • a first through region 31, a first recess portion 32, and a second recess portion 33 are formed on the photoresist layer 30 by exposure and development using a fourth mask; wherein the fourth mask includes light transmission.
  • the seventh light transmission hole, the eighth light transmission hole and the ninth light transmission hole are sequentially decreased, the seventh light transmission hole corresponds to the first penetration area 31, and the eighth light transmission hole corresponds to the first concave portion 2, and the ninth light transmission hole The hole corresponds to the second recessed portion 33.
  • the functional layer 40 is first etched to form a first via 41 on the functional layer 40 corresponding to the first through region 31.
  • the photoresist in the first recessed portion 32 is peeled off to form a second through region 32.
  • the functional layer 40 is etched a second time to form a new second via 42 on the functional layer 40 corresponding to the second through region 32, and the depth of the first via 41 is increased. .
  • the photoresist in the second depressed portion 33 is peeled off to form a third through region 33.
  • S97 performing a third etching on the functional layer to form a third via hole on the functional layer corresponding to the third through region, and increasing the depth of the first via hole and the second via hole to form different depths Three vias.
  • the functional layer 40 is etched a third time to form a third via 43 on the functional layer 40 corresponding to the third through region 33, and the first via 41 and the second via 42 are formed.
  • the depth is increased to form three vias of different depths.
  • FIG. 16 is a schematic structural diagram of an embodiment of an array substrate according to the present invention.
  • the array substrate includes at least a substrate 161, a metal layer 162, and an insulating layer 163.
  • the insulating layer 163 includes at least two via holes having different depths. For example, the first via hole 1631 and the second via hole 1632, wherein at least two via holes having different depths are fabricated by the method as in the above embodiment.
  • the first via hole 1631 is used for the other layer to be connected to the metal layer 162, and the second via hole 163 is used to fill the organic material to make the insulating layer 163 resistant to bending.
  • FIG. 17 is a schematic structural diagram of an embodiment of a display device according to the present invention.
  • the display device includes a display panel 171 and a backlight 172.
  • the display panel 171 includes a color filter substrate 1711, an array substrate 1712, and a liquid crystal layer therein. 1713, wherein the array substrate 1712 is an array substrate as disclosed in the above embodiments.
  • the display device provided above is a liquid crystal display device.
  • the above-mentioned hole digging method may also dig holes between layers of other displays such as a user OLED display.

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Abstract

Disclosed are a method for forming holes in a functional layer, an array substrate and a display device. The method comprises: S1, coating a photoresist layer onto a functional layer; S2, forming at least one type of penetrating region on the photoresist layer, wherein the penetrating region is an area where the functional layer is exposed on the photoresist layer; S3, etching the functional layer to form a via hole in the functional layer corresponding to the penetrating region; S4, forming a new type of penetrating region on the photoresist layer; and S5, etching the functional layer to form a new via hole in the functional layer corresponding to the new type of penetrating region and increase the depth of the via hole formed before this etching process; and performing S4 and S5 at least once to form at least two via holes with different depths. In this way, according to the present invention, the function layer is subjected to multiple etching processes using only one photoresist layer to form multiple via holes with different depths, thereby simplifying the process and improving the production efficiency thereof.

Description

一种功能层开孔的方法以及显示装置Method for opening functional layer and display device 技术领域Technical field
本发明涉及显示技术领域，特别是涉及一种功能层开孔的方法以及显示装置。The present invention relates to the field of display technologies, and in particular, to a method for opening a functional layer and a display device.
背景技术Background technique
现有的显示面板包括多个功能层结构，其中，功能层一般可以包括金属层、半导体层、有机层和无机层等，例如S iO x或S iN x制作形成的绝缘层。 The existing display panel includes a plurality of functional layer structures, wherein the functional layer may generally include a metal layer, a semiconductor layer, an organic layer, an inorganic layer, and the like, such as an insulating layer formed by S i O x or S i N x .
在显示面板的制造中，一般会在这些功能层上开孔(hole)以实现功能层、电极或导线之间的连接。在实际操作中，在某层的hole制作中，可能存在几种不同深度的hole制作，因深度不同需要不同的Pattern(图案)制作工艺，制造流程较为复杂。In the manufacture of display panels, holes are typically formed in these functional layers to effect connection between functional layers, electrodes or wires. In actual operation, in the hole production of a certain layer, there may be several holes of different depths, and different pattern processes are required due to different depths, and the manufacturing process is complicated.
发明内容Summary of the invention
本发明主要解决的技术问题是提供一种功能层开孔的方法以及显示装置，能够在只使用一道光阻的情况下，对功能层进行多次刻蚀工艺，以形成深度不同的多个过孔，节省了工艺流程，提高了生产效率。The technical problem to be solved by the present invention is to provide a method for opening a functional layer and a display device capable of performing multiple etching processes on a functional layer in a single photoresist to form a plurality of different depths. Holes save process and increase production efficiency.
为解决上述技术问题，本发明采用的一个技术方案是：提供一种功能层开孔的方法，功能层为显示装置中的阵列基板中的绝缘层，该方法包括：S1，在功能层上涂布光阻层；S2，采用第一光罩覆盖光阻层进行曝光，以在光阻层上至少形成一类贯穿区；其中，贯穿区为光阻层上暴露功能层的区域；S3，对功能层进行刻蚀，以在对应贯穿区的功能层上形成过孔；S4，采用第二光罩覆盖光阻层进行曝光，以在光阻层上形成新一类的贯穿区；S5，对功能层进行刻蚀，以在对应新一类的贯穿区的功能层上形成新的过孔，并使在本次刻蚀之前形成的过孔的深度增大；至少执行一次上述S4-S5，以形成深度不同的至少两个过孔。In order to solve the above technical problem, a technical solution adopted by the present invention is to provide a method for opening a functional layer, the functional layer being an insulating layer in the array substrate in the display device, the method comprising: S1, coating on the functional layer a photoresist layer; S2, exposing the photoresist layer with a first mask to form at least one type of penetration region on the photoresist layer; wherein the through region is a region on the photoresist layer exposing the functional layer; S3, The functional layer is etched to form via holes on the functional layer corresponding to the through-region; S4, the second photomask is used to cover the photoresist layer for exposure to form a new type of through-region on the photoresist layer; S5, The functional layer is etched to form new vias on the functional layer corresponding to the new type of through-region, and the depth of the via formed before the etching is increased; at least one of the above-mentioned S4-S5 is performed, To form at least two vias having different depths.
为解决上述技术问题，本发明采用的一个技术方案是：提供一种功能层开孔的方法，该方法包括：S1，在功能层上涂布光阻层；S2，在光阻层上至少形 成一类贯穿区；其中，贯穿区为光阻层上暴露功能层的区域；S3，对功能层进行刻蚀，以在对应贯穿区的功能层上形成过孔；S4，在光阻层上形成新一类的贯穿区；S5，对功能层进行刻蚀，以在对应新一类的贯穿区的功能层上形成新的过孔，并使在本次刻蚀之前形成的过孔的深度增大；至少执行一次上述S4-S5，以形成深度不同的至少两个过孔。In order to solve the above technical problem, a technical solution adopted by the present invention is to provide a method for opening a functional layer, the method comprising: S1, coating a photoresist layer on the functional layer; S2, forming at least on the photoresist layer a type of penetrating region; wherein the penetrating region is a region on the photoresist layer exposing the functional layer; S3, etching the functional layer to form a via hole on the functional layer corresponding to the penetrating region; S4, forming on the photoresist layer a new type of penetration region; S5, etching the functional layer to form new vias on the functional layer corresponding to the new type of through-region, and increasing the depth of the via formed before the etching Large; the above S4-S5 is performed at least once to form at least two vias having different depths.
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种阵列基板，该阵列基板包括绝缘层，绝缘层上包括至少两个深度不同的过孔，其中，至少两个深度不同的过孔是采用如上的方法制作得到的。In order to solve the above technical problem, another technical solution adopted by the present invention is to provide an array substrate, the array substrate includes an insulating layer, and the insulating layer includes at least two via holes having different depths, wherein at least two depths are different The via holes were produced by the above method.
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种显示装置，该显示装置包括阵列基板，该阵列基板是如上的阵列基板。In order to solve the above technical problem, another technical solution adopted by the present invention is to provide a display device including an array substrate, which is an array substrate as above.
本发明的有益效果是：区别于现有技术的情况，本发明的功能层开孔的方法包括：S1，在功能层上涂布光阻层；S2，在光阻层上至少形成一类贯穿区；其中，贯穿区为光阻层上暴露功能层的区域；S3，对功能层进行刻蚀，以在对应贯穿区的功能层上形成过孔；S4，在光阻层上形成新一类的贯穿区；S5，对功能层进行刻蚀，以在对应新一类的贯穿区的功能层上形成新的过孔，并使在本次刻蚀之前形成的过孔的深度增大；至少执行一次上述S4-S5，以形成深度不同的至少两个过孔。通过上述方式，能够在只使用一道光阻的情况下，对功能层进行多次刻蚀工艺，以形成深度不同的多个过孔，节省了工艺流程，提高了生产效率。The invention has the beneficial effects that the method for opening the functional layer of the present invention comprises: S1, coating a photoresist layer on the functional layer; S2, forming at least one type of through-hole on the photoresist layer. a region; wherein the through region is a region on the photoresist layer exposing the functional layer; S3, etching the functional layer to form a via hole on the functional layer corresponding to the through region; S4, forming a new class on the photoresist layer a penetration region; S5, etching the functional layer to form a new via on a functional layer corresponding to a new type of through-region, and increasing the depth of the via formed before the etching; The above S4-S5 is performed once to form at least two via holes having different depths. In the above manner, the functional layer can be etched multiple times with only one photoresist to form a plurality of vias having different depths, which saves the process flow and improves the production efficiency.
附图说明DRAWINGS
图1是本发明公开的功能层开孔的方法一实施例的流程示意图；1 is a schematic flow chart of an embodiment of a method for opening a functional layer according to the present invention;
图2是本发明公开的功能层开孔的方法另一实施例的流程示意图；2 is a schematic flow chart of another embodiment of a method for opening a functional layer according to the present invention;
图3-图8是本发明公开的功能层开孔的方法另一实施例的工艺流程示意图；3-8 are schematic diagrams showing a process flow of another embodiment of a method for opening a functional layer according to the present invention;
图9是本发明公开的功能层开孔的方法又一实施例的流程示意图；9 is a schematic flow chart of still another embodiment of a method for opening a functional layer according to the present invention;
图10-图15是本发明公开的功能层开孔的方法又一实施例的工艺流程示意 图；10 to FIG. 15 are schematic flow charts showing still another embodiment of the method for opening a functional layer according to the present invention;
图16是本发明提供的阵列基板一实施例的结构示意图；16 is a schematic structural view of an embodiment of an array substrate provided by the present invention;
图17是本发明提供的显示装置一实施例的结构示意图。17 is a schematic structural view of an embodiment of a display device provided by the present invention.
本发明的实施方式Embodiments of the invention
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。可以理解的是，此处所描述的具体实施例仅用于解释本发明，而非对本发明的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与本发明相关的部分而非全部结构。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described in the following with reference to the accompanying drawings. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. It should also be noted that, for ease of description, only some, but not all, of the structures related to the present invention are shown in the drawings. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
本发明中的术语“第一”、“第二”等是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、系统、产品或设备没有限定于已列出的步骤或单元，而是可选地还包括没有列出的步骤或单元，或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或单元。The terms "first", "second", and the like in the present invention are used to distinguish different objects, and are not intended to describe a specific order. Furthermore, the terms "comprises" and "comprising" and "comprising" are intended to cover a non-exclusive inclusion. For example, a process, method, system, product, or device that comprises a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units not listed, or alternatively Other steps or units inherent to these processes, methods, products or equipment.
在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。References to "an embodiment" herein mean that a particular feature, structure, or characteristic described in connection with the embodiments can be included in at least one embodiment of the invention. The appearances of the phrases in various places in the specification are not necessarily referring to the same embodiments, and are not exclusive or alternative embodiments that are mutually exclusive. Those skilled in the art will understand and implicitly understand that the embodiments described herein can be combined with other embodiments.
参阅图1，图1是本发明公开的功能层开孔的方法一实施例的流程示意图，该方法包括：Referring to FIG. 1 , FIG. 1 is a schematic flow chart of an embodiment of a method for opening a functional layer according to the present disclosure. The method includes:
S11：在功能层上涂布光阻层。S11: coating a photoresist layer on the functional layer.
其中，该功能层可以是阵列基板中的金属层、有机层或无机层。具体地，该金属层可以是Pt、Ru、Au、Ag、Mo、Cr、Al、Ta、Ti或W中的一种金属或 多种金属的合金，有机层采用有机材料制作得到，无机层可以具体为钝化层或绝缘层，例如S iO x或S iN x。 The functional layer may be a metal layer, an organic layer or an inorganic layer in the array substrate. Specifically, the metal layer may be an alloy of one or more metals of Pt, Ru, Au, Ag, Mo, Cr, Al, Ta, Ti or W, and the organic layer is made of an organic material, and the inorganic layer may be Specifically, it is a passivation layer or an insulating layer such as S i O x or S i N x .
其中，该光阻又称光阻剂或光刻胶，光阻有两种，正向光阻(positive photoresist)和负向光阻(negative photoresist)。正向光阻是光阻的一种，其照到光的部分会溶于光阻显影液，而没有照到光的部分不会溶于光阻显影液。负向光阻是光阻的一种，其照到光的部分不会溶于光阻显影液，而没有照到光的部分会溶于光阻显影液。Among them, the photoresist is also called photoresist or photoresist, and there are two kinds of photoresists, positive photoresist and negative photoresist. The forward photoresist is a kind of photoresist, and the portion which is irradiated to the light is dissolved in the photoresist developing solution, and the portion which is not irradiated with light is not dissolved in the photoresist developing solution. The negative photoresist is a kind of photoresist, and the portion which is irradiated to the light is not dissolved in the photoresist developing solution, and the portion which is not irradiated with light is dissolved in the photoresist developing solution.
在本实施例中，对功能层和光阻层的种类均不作限制。In the present embodiment, the types of the functional layer and the photoresist layer are not limited.
S12：在光阻层上至少形成一类贯穿区。S12: forming at least one type of penetration region on the photoresist layer.
其中，贯穿区为光阻层上暴露功能层的区域。Wherein, the through region is a region on the photoresist layer where the functional layer is exposed.
具体地，可以通过曝光显影的方式形成该贯穿区。例如，采用一光罩(该光罩上设置有一透光孔)覆盖光阻，并采用光线照射光罩，其中光线穿过光罩上的透光孔对光阻上的一个圆形区域进行曝光，然后在光阻上涂覆显影液以使曝光区域的光阻剥离，最终形成该贯穿区。Specifically, the through region can be formed by exposure development. For example, a reticle is provided (the reticle is provided with a light-transmissive hole) to cover the photoresist, and the illuminating illuminator is irradiated with light, wherein the light passes through a transparent hole in the reticle to expose a circular area on the photoresist. Then, a developer is coated on the photoresist to peel off the photoresist of the exposed region, and finally the through region is formed.
S13：对功能层进行刻蚀，以在对应贯穿区的功能层上形成过孔。S13: etching the functional layer to form via holes on the functional layer corresponding to the through region.
利用上述具有贯穿区的光阻层作为掩膜板，对功能层进行刻蚀，以在对应贯穿区的区域形成过孔。其中，可以采用干法刻蚀和湿法刻蚀，这里不作限制。The functional layer is etched by using the above-described photoresist layer having a through region as a mask to form via holes in a region corresponding to the through region. Among them, dry etching and wet etching can be employed, and are not limited herein.
S14：在光阻层上形成新一类的贯穿区。S14: forming a new type of penetration region on the photoresist layer.
S15：对功能层进行刻蚀，以在对应新一类的贯穿区的功能层上形成新的过孔，并使在本次刻蚀之前形成的过孔的深度增大。S15: etching the functional layer to form new vias on the functional layer corresponding to the new type of through-region, and increasing the depth of the via formed before the etching.
至少执行一次上述S14-S15，以形成深度不同的至少两个过孔。The above S14-S15 is performed at least once to form at least two via holes having different depths.
其中，由于一类贯穿区和新一类的贯穿区位于同一层光阻上，因此，在步骤S15中进行刻蚀时，会对步骤S13中形成过孔进行第二次刻蚀，这样会加深步骤S13中形成过孔的深度，这样就至少形成了两个深度不同的通孔。Wherein, since one type of penetration region and a new type of penetration region are located on the same layer of photoresist, when etching is performed in step S15, the via hole formed in step S13 is etched a second time, which will deepen. The depth of the via hole is formed in step S13, so that at least two via holes having different depths are formed.
可以理解的，在上述实施例中，可以多次重复步骤S14和步骤S15，这样就可以在光阻层上形成多个贯穿区，并且在每次刻蚀时，都会使之前刻蚀形成的 过孔再次刻蚀，进而使其深度进一步加深，从而形成多个深度不同的过孔。It can be understood that, in the above embodiment, step S14 and step S15 may be repeated a plurality of times, so that a plurality of through regions may be formed on the photoresist layer, and each etching may be performed before etching. The holes are etched again to further deepen the depth to form a plurality of vias having different depths.
区别于现有技术，本实施例的功能层开孔的方法包括：S1，在功能层上涂布光阻层；S2，在光阻层上至少形成一类贯穿区；其中，贯穿区为光阻层上暴露功能层的区域；S3，对功能层进行刻蚀，以在对应贯穿区的功能层上形成过孔；S4，在光阻层上形成新一类的贯穿区；S5，对功能层进行刻蚀，以在对应新一类的贯穿区的功能层上形成新的过孔，并使在本次刻蚀之前形成的过孔的深度增大；至少执行一次上述S4-S5，以形成深度不同的至少两个过孔。通过上述方式，能够在只使用一道光阻的情况下，对功能层进行多次刻蚀工艺，以形成深度不同的多个过孔，节省了工艺流程，提高了生产效率。Different from the prior art, the method for opening a functional layer of the embodiment includes: S1, coating a photoresist layer on the functional layer; S2, forming at least one type of penetration region on the photoresist layer; wherein the through region is light a region on the resist layer exposing the functional layer; S3, etching the functional layer to form a via hole on the functional layer corresponding to the through region; S4, forming a new type of through region on the photoresist layer; S5, function The layer is etched to form new vias on the functional layer corresponding to the new type of through-region, and the depth of the via formed before the etching is increased; at least one of the above S4-S5 is performed to At least two vias having different depths are formed. In the above manner, the functional layer can be etched multiple times with only one photoresist to form a plurality of vias having different depths, which saves the process flow and improves the production efficiency.
参阅图2，图2是本发明公开的功能层开孔的方法另一实施例的流程示意图，该方法包括：Referring to FIG. 2, FIG. 2 is a schematic flow chart of another embodiment of a method for opening a functional layer according to the present disclosure. The method includes:
S21：在功能层上涂布光阻层。S21: coating a photoresist layer on the functional layer.
S22：在光阻层上形成第一贯穿区。S22: forming a first through region on the photoresist layer.
具体地，如图3所示，包括光阻层30以及功能层40。采用第一张光罩在光阻层30上经过曝光显影形成第一贯穿区31；其中，第一张光罩包括第一透光孔，第一透光孔对应第一贯穿区31。Specifically, as shown in FIG. 3, the photoresist layer 30 and the functional layer 40 are included. The first through-region 31 is formed by exposure and development on the photoresist layer 30 by using the first mask; wherein the first mask includes a first light-transmissive hole, and the first light-transmissive hole corresponds to the first through-region 31.
S23：对功能层进行第一次刻蚀，以在对应第一贯穿区的功能层上形成第一过孔。S23: performing a first etching on the functional layer to form a first via hole on the functional layer corresponding to the first through region.
具体地，如图4所示，对功能层40进行第一次刻蚀，以在对应第一贯穿区31的功能层上形成第一过孔41。Specifically, as shown in FIG. 4, the functional layer 40 is first etched to form a first via 41 on the functional layer corresponding to the first through region 31.
S24：在光阻层上形成第二贯穿区，并增加第一贯穿区的宽度。S24: forming a second through region on the photoresist layer and increasing a width of the first through region.
具体地，如图5所示，采用第二张光罩在光阻层30上经过曝光显影形成第二贯穿区32，并增加第一贯穿区31的宽度；其中，第二张光罩包括第二透光孔和第三透光孔，第二透光孔对应第一贯穿区31，第三透光孔对应第二贯穿区32，第二透光孔和第三透光孔的宽度依次递减，第二透光孔的宽度大于第一透光孔。Specifically, as shown in FIG. 5, a second through mask is formed on the photoresist layer 30 by exposure and development to form a second through region 32, and the width of the first through region 31 is increased; wherein the second mask includes a second light transmission hole corresponding to the first through hole 31, a third light transmission hole corresponding to the second through hole 32, and a width of the second light transmission hole and the third light transmission hole are sequentially decreased The width of the second light transmission hole is larger than the first light transmission hole.
S25：对功能层进行第二次刻蚀，以在对应第二贯穿区的功能层上形成第二 过孔，并使第一过孔的宽度和深度增大。S25: performing a second etching on the functional layer to form a second via hole on the functional layer corresponding to the second through region, and increasing the width and depth of the first via hole.
具体地，如图6所示，对功能层40进行第二次刻蚀，以在对应第二贯穿区32的功能层上形成第二过孔42，并使第一过孔41的宽度和深度增大。Specifically, as shown in FIG. 6, the functional layer 40 is etched a second time to form a second via 42 on the functional layer corresponding to the second through region 32, and the width and depth of the first via 41 are made. Increase.
S26：在光阻层上形成第三贯穿区，并增加第一贯穿区和第二贯穿区的宽度。S26: forming a third through region on the photoresist layer and increasing a width of the first through region and the second through region.
具体地，如图7所示，采用第三张光罩在光阻层30上经过曝光显影形成第三贯穿区33，并增加第一贯穿区31和第二贯穿区32的宽度；其中，第三张光罩包括第四透光孔、第五透光孔和第六透光孔，第四透光孔对应第一贯穿区31，第五透光孔对应第二贯穿区2，第六透光孔对应第三贯穿区33，第四透光孔、第五透光孔和第六透光孔的宽度依次递减，第四透光孔的宽度大于第二透光孔，第五透光孔的宽度大于第三透光孔。Specifically, as shown in FIG. 7, a third through mask is formed on the photoresist layer 30 by exposure and development to form a third through region 33, and the widths of the first through region 31 and the second through region 32 are increased; The three masks include a fourth light transmission hole, a fifth light transmission hole and a sixth light transmission hole, the fourth light transmission hole corresponds to the first penetration area 31, and the fifth light transmission hole corresponds to the second penetration area 2, the sixth transmission The light hole corresponds to the third through hole 33, and the widths of the fourth light transmission hole, the fifth light transmission hole and the sixth light transmission hole are sequentially decreased, and the width of the fourth light transmission hole is larger than the second light transmission hole, and the fifth light transmission hole The width is larger than the third light transmission hole.
S27：对功能层进行第三次刻蚀，以在对应第三贯穿区的功能层上形成第三过孔，并使第一过孔以及第二过孔的宽度和深度增大，以形成宽度和深度不同的三个过孔。S27: performing a third etching on the functional layer to form a third via hole on the functional layer corresponding to the third through region, and increasing the width and depth of the first via hole and the second via hole to form a width Three vias with different depths.
具体地，如图8所示，对功能层40进行第三次刻蚀，以在对应第三贯穿区33的功能层上形成第三过孔43，并使第一过孔41以及第二过孔42的宽度和深度增大，以形成宽度和深度不同的三个过孔。Specifically, as shown in FIG. 8, the functional layer 40 is etched a third time to form a third via 43 on the functional layer corresponding to the third through region 33, and the first via 41 and the second pass are made. The width and depth of the holes 42 are increased to form three vias having different widths and depths.
可选的，在一具体的实施例中，第一张光罩的第一透光孔的直径可以为1μm，第二张光罩的第二透光孔的直径可以为2μm，第三透光孔的直径可以为1μm，第三张光罩的第四透光孔的直径可以为3μm，第五透光孔的直径可以为2μm，第六透光孔的直径可以为1μm。Optionally, in a specific embodiment, the first light transmission hole of the first mask may have a diameter of 1 μm, and the second light transmission hole of the second mask may have a diameter of 2 μm, and the third light transmission. The diameter of the hole may be 1 μm, the diameter of the fourth light transmission hole of the third mask may be 3 μm, the diameter of the fifth light transmission hole may be 2 μm, and the diameter of the sixth light transmission hole may be 1 μm.
参阅图9，图9是本发明公开的功能层开孔的方法又一实施例的流程示意图，该方法包括：Referring to FIG. 9, FIG. 9 is a schematic flowchart diagram of still another embodiment of a method for opening a functional layer according to the present disclosure, where the method includes:
S91：在功能层上涂布光阻层。S91: coating a photoresist layer on the functional layer.
S92：在光阻层上形成第一贯穿区、第一凹陷部以及第二凹陷部。S92: forming a first through region, a first recess portion, and a second recess portion on the photoresist layer.
如图10所示，采用第四张光罩在光阻层30上经过曝光显影形成第一贯穿区31、第一凹陷部32以及第二凹陷部33；其中，第四张光罩包括透光率依次 递减的第七透光孔、第八透光孔以及第九透光孔，第七透光孔对应第一贯穿区31，第八透光孔对应第一凹陷部2，第九透光孔对应第二凹陷部33。As shown in FIG. 10, a first through region 31, a first recess portion 32, and a second recess portion 33 are formed on the photoresist layer 30 by exposure and development using a fourth mask; wherein the fourth mask includes light transmission. The seventh light transmission hole, the eighth light transmission hole and the ninth light transmission hole are sequentially decreased, the seventh light transmission hole corresponds to the first penetration area 31, and the eighth light transmission hole corresponds to the first concave portion 2, and the ninth light transmission hole The hole corresponds to the second recessed portion 33.
S93：对功能层进行第一次刻蚀，以在对应第一贯穿区的功能层上形成第一过孔。S93: performing a first etching on the functional layer to form a first via hole on the functional layer corresponding to the first through region.
如图11所示，对功能层40进行第一次刻蚀，以在对应第一贯穿区31的功能层40上形成第一过孔41。As shown in FIG. 11, the functional layer 40 is first etched to form a first via 41 on the functional layer 40 corresponding to the first through region 31.
S94：对第一凹陷部中的光阻进行剥离，以形成第二贯穿区。S94: peeling off the photoresist in the first depressed portion to form a second through region.
如图12所示，对第一凹陷部32中的光阻进行剥离，以形成第二贯穿区32。As shown in FIG. 12, the photoresist in the first recessed portion 32 is peeled off to form a second through region 32.
S95：对功能层进行第二次刻蚀，以在对应第二贯穿区的功能层上形成新的第二过孔，并使第一过孔的深度增大。S95: performing a second etching on the functional layer to form a new second via on the functional layer corresponding to the second through region, and increasing the depth of the first via.
如图13所示，对功能层40进行第二次刻蚀，以在对应第二贯穿区32的功能层40上形成新的第二过孔42，并使第一过孔41的深度增大。As shown in FIG. 13, the functional layer 40 is etched a second time to form a new second via 42 on the functional layer 40 corresponding to the second through region 32, and the depth of the first via 41 is increased. .
S96：对第二凹陷部中的光阻进行剥离，以形成第三贯穿区。S96: peeling off the photoresist in the second recess to form a third through region.
如图14所示，对第二凹陷部33中的光阻进行剥离，以形成第三贯穿区33。As shown in FIG. 14, the photoresist in the second depressed portion 33 is peeled off to form a third through region 33.
S97：对功能层进行第三次刻蚀，以在对应第三贯穿区的功能层上形成第三过孔，并使第一过孔以及第二过孔的深度增大，以形成深度不同的三个过孔。S97: performing a third etching on the functional layer to form a third via hole on the functional layer corresponding to the third through region, and increasing the depth of the first via hole and the second via hole to form different depths Three vias.
如图15所示，对功能层40进行第三次刻蚀，以在对应第三贯穿区33的功能层40上形成第三过孔43，并使第一过孔41以及第二过孔42的深度增大，以形成深度不同的三个过孔。As shown in FIG. 15, the functional layer 40 is etched a third time to form a third via 43 on the functional layer 40 corresponding to the third through region 33, and the first via 41 and the second via 42 are formed. The depth is increased to form three vias of different depths.
参阅图16，图16是本发明提供的阵列基板一实施例的结构示意图，该阵列基板至少包括基板161、金属层162以及绝缘层163，绝缘层163上包括至少两个深度不同的过孔，例如第一过孔1631以及第二过孔1632，其中，至少两个深度不同的过孔是采用如上述实施例的方法制作得到的。Referring to FIG. 16, FIG. 16 is a schematic structural diagram of an embodiment of an array substrate according to the present invention. The array substrate includes at least a substrate 161, a metal layer 162, and an insulating layer 163. The insulating layer 163 includes at least two via holes having different depths. For example, the first via hole 1631 and the second via hole 1632, wherein at least two via holes having different depths are fabricated by the method as in the above embodiment.
例如，其中的第一过孔1631用于其他层与金属层162相连接，第二过孔163用于填充有机材料，以使绝缘层163具有耐弯折性。For example, the first via hole 1631 is used for the other layer to be connected to the metal layer 162, and the second via hole 163 is used to fill the organic material to make the insulating layer 163 resistant to bending.
参阅图17，图17是本发明提供的显示装置一实施例的结构示意图，该显示 装置包括显示面板171和背光172，其中，显示面板171包括彩膜基板1711、阵列基板1712以及其中的液晶层1713，其中，该阵列基板1712是如上述的实施例公开的阵列基板。Referring to FIG. 17, FIG. 17 is a schematic structural diagram of an embodiment of a display device according to the present invention. The display device includes a display panel 171 and a backlight 172. The display panel 171 includes a color filter substrate 1711, an array substrate 1712, and a liquid crystal layer therein. 1713, wherein the array substrate 1712 is an array substrate as disclosed in the above embodiments.
当然，上述提供的显示装置为液晶显示装置，在其他实施例中，上述的挖孔方法也可以用户OLED显示器等其他显示器的层间挖孔。Of course, the display device provided above is a liquid crystal display device. In other embodiments, the above-mentioned hole digging method may also dig holes between layers of other displays such as a user OLED display.
可以理解的，在上述图16以及图17涉及的实施例，其原理和结构与上述实施例类似，这里不再赘述。It can be understood that the principles and structures of the embodiments in FIG. 16 and FIG. 17 are similar to those of the foregoing embodiment, and are not described herein again.
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。The above is only the embodiment of the present invention, and is not intended to limit the scope of the invention, and the equivalent structure or equivalent process transformations made by the description of the invention and the drawings are directly or indirectly applied to other related technologies. The fields are all included in the scope of patent protection of the present invention.

Claims (18)

  1. 一种功能层开孔的方法，其中，所述功能层为显示装置中的阵列基板中的绝缘层，所述方法包括：A method for opening a functional layer, wherein the functional layer is an insulating layer in an array substrate in a display device, the method comprising:
    S1，在所述功能层上涂布光阻层；S1, coating a photoresist layer on the functional layer;
    S2，采用第一光罩覆盖所述光阻层进行曝光，以在所述光阻层上至少形成一类贯穿区；其中，所述贯穿区为所述光阻层上暴露所述功能层的区域；S2, exposing the photoresist layer by using a first mask to form at least one type of penetration region on the photoresist layer; wherein the through region is a layer on the photoresist layer exposing the functional layer region;
    S3，对所述功能层进行刻蚀，以在对应所述贯穿区的所述功能层上形成过孔；S3, etching the functional layer to form a via hole on the functional layer corresponding to the through region;
    S4，采用第二光罩覆盖所述光阻层进行曝光，以在所述光阻层上形成新一类的贯穿区；S4, covering the photoresist layer with a second mask for exposure to form a new type of penetration region on the photoresist layer;
    S5，对所述功能层进行刻蚀，以在对应所述新一类的贯穿区的所述功能层上形成新的过孔，并使在本次刻蚀之前形成的所述过孔的深度增大；S5, etching the functional layer to form a new via on the functional layer corresponding to the new type of through-region, and to form a depth of the via formed before the etching Increase
    至少执行一次上述S4-S5，以形成深度不同的至少两个过孔。The above S4-S5 is performed at least once to form at least two via holes having different depths.
  2. 根据权利要求1所述的方法，其中，The method of claim 1 wherein
    所述在所述光阻层上至少形成一类贯穿区，包括：Forming at least one type of penetration region on the photoresist layer, including:
    在所述光阻层上形成第一贯穿区；Forming a first through region on the photoresist layer;
    所述对所述功能层进行刻蚀，以在对应所述贯穿区的所述功能层上形成过孔，包括：The etching the functional layer to form via holes on the functional layer corresponding to the through region includes:
    对所述功能层进行第一次刻蚀，以在对应所述第一贯穿区的所述功能层上形成第一过孔；Performing a first etching on the functional layer to form a first via hole on the functional layer corresponding to the first through region;
    所述在所述光阻层上形成新一类的贯穿区，包括：Forming a new type of penetration region on the photoresist layer, comprising:
    在所述光阻层上形成第二贯穿区，并增加所述第一贯穿区的宽度；Forming a second through region on the photoresist layer and increasing a width of the first through region;
    所述对所述功能层进行刻蚀，以在对应所述新一类的贯穿区的功能层上形成新的过孔，并使在本次刻蚀之前形成的所述过孔的深度增大，包括：Etching the functional layer to form new vias on the functional layers corresponding to the new type of through regions, and increasing the depth of the vias formed before the etching ,include:
    对所述功能层进行第二次刻蚀，以在对应所述第二贯穿区的所述功能层上 形成第二过孔，并使所述第一过孔的宽度和深度增大。The functional layer is etched a second time to form a second via on the functional layer corresponding to the second through region and to increase the width and depth of the first via.
  3. 根据权利要求2所述的方法，其中，The method of claim 2, wherein
    所述方法还包括：The method further includes:
    在所述光阻层上形成第三贯穿区，并增加所述第一贯穿区和所述第二贯穿区的宽度；Forming a third through region on the photoresist layer and increasing a width of the first through region and the second through region;
    对所述功能层进行第三次刻蚀，以在对应所述第三贯穿区的所述功能层上形成第三过孔，并使所述第一过孔以及所述第二过孔的宽度和深度增大，以形成宽度和深度不同的三个过孔。Performing a third etching on the functional layer to form a third via hole on the functional layer corresponding to the third through region, and width of the first via hole and the second via hole And the depth is increased to form three vias having different widths and depths.
  4. 根据权利要求3所述的方法，其中，The method of claim 3, wherein
    所述在所述光阻层上形成第一贯穿区，包括：Forming a first through region on the photoresist layer, including:
    采用第一张光罩在所述光阻层上经过曝光显影形成第一贯穿区；其中，所述第一张光罩包括第一透光孔，所述第一透光孔对应所述第一贯穿区；Forming a first through-region by exposure and development on the photoresist layer by using a first mask; wherein the first mask includes a first light-transmissive hole, and the first light-transmissive hole corresponds to the first Through zone
    所述在所述光阻层上形成第二贯穿区，并增加所述第一贯穿区的宽度，包括：Forming a second through region on the photoresist layer and increasing a width of the first through region includes:
    采用第二张光罩在所述光阻层上经过曝光显影形成第二贯穿区，并增加所述第一贯穿区的宽度；其中，所述第二张光罩包括第二透光孔和第三透光孔，所述第二透光孔对应所述第一贯穿区，所述第三透光孔对应所述第二贯穿区，所述第二透光孔和所述第三透光孔的宽度依次递减，所述第二透光孔的宽度大于所述第一透光孔；Forming a second through region on the photoresist layer by exposure and development using a second mask, and increasing a width of the first through region; wherein the second mask includes a second light transmission hole and a second a third light transmission hole corresponding to the first through hole, the third light transmission hole corresponding to the second through hole, the second light transmission hole and the third light transmission hole The width of the second light transmission hole is larger than that of the first light transmission hole;
    所述在所述光阻层上形成第三贯穿区，并增加所述第一贯穿区和所述第二贯穿区的宽度，包括：Forming a third through region on the photoresist layer and increasing a width of the first through region and the second through region, including:
    采用第三张光罩在所述光阻层上经过曝光显影形成第三贯穿区，并增加所述第一贯穿区和所述第二贯穿区的宽度；其中，所述第三张光罩包括第四透光孔、第五透光孔和第六透光孔，所述第四透光孔对应所述第一贯穿区，所述第五透光孔对应所述第二贯穿区，所述第六透光孔对应所述第三贯穿区，所述第四透光孔、所述第五透光孔和所述第六透光孔的宽度依次递减，所述第四透光 孔的宽度大于所述第二透光孔，所述第五透光孔的宽度大于所述第三透光孔。Forming a third through-region by exposure development on the photoresist layer using a third mask, and increasing a width of the first through region and the second through region; wherein the third mask comprises a fourth light transmission hole, a fifth light transmission hole, and a sixth light transmission hole, wherein the fourth light transmission hole corresponds to the first through hole, and the fifth light transmission hole corresponds to the second through hole, The sixth transparent hole corresponds to the third through-region, and the widths of the fourth transparent hole, the fifth transparent hole and the sixth transparent hole are sequentially decreased, and the width of the fourth transparent hole The width of the fifth light transmission hole is larger than that of the third light transmission hole.
  5. 根据权利要求1所述的方法，其中，The method of claim 1 wherein
    所述在所述光阻层上至少形成一类贯穿区，包括：Forming at least one type of penetration region on the photoresist layer, including:
    在所述光阻层上形成第一贯穿区以及至少第一凹陷部；Forming a first through region and at least a first recess on the photoresist layer;
    所述对所述功能层进行刻蚀，以在对应所述贯穿区的所述功能层上形成过孔，包括：The etching the functional layer to form via holes on the functional layer corresponding to the through region includes:
    对所述功能层进行第一次刻蚀，以在对应所述第一贯穿区的所述功能层上形成第一过孔；Performing a first etching on the functional layer to form a first via hole on the functional layer corresponding to the first through region;
    所述在所述光阻层上形成新一类的贯穿区，包括：Forming a new type of penetration region on the photoresist layer, comprising:
    对所述第一凹陷部中的光阻进行剥离，以形成第二贯穿区；Peeling the photoresist in the first recess to form a second through region;
    所述对所述功能层进行刻蚀，以在对应所述新一类的贯穿区的所述功能层上形成新的过孔，并使在本次刻蚀之前形成的所述过孔的深度增大，包括：Etching the functional layer to form new vias on the functional layer corresponding to the new type of through regions, and to make the vias formed before the current etching Increase, including:
    对所述功能层进行第二次刻蚀，以在对应所述第二贯穿区的所述功能层上形成新的第二过孔，并使所述第一过孔的深度增大。Performing a second etching on the functional layer to form a new second via on the functional layer corresponding to the second through region and increasing the depth of the first via.
  6. 根据权利要求5所述的方法，其中，The method of claim 5, wherein
    所述在所述光阻层上形成第一贯穿区以及至少第一凹陷部，包括：Forming the first through region and the at least first recess on the photoresist layer, including:
    在所述光阻层上形成第一贯穿区、第一凹陷部以及第二凹陷部；Forming a first through region, a first recess portion, and a second recess portion on the photoresist layer;
    所述方法还包括：The method further includes:
    对所述第二凹陷部中的光阻进行剥离，以形成第三贯穿区；Stripping the photoresist in the second recess to form a third through region;
    对所述功能层进行第三次刻蚀，以在对应所述第三贯穿区的所述功能层上形成第三过孔，并使所述第一过孔以及所述第二过孔的深度增大，以形成深度不同的三个过孔。Performing a third etching on the functional layer to form a third via on the functional layer corresponding to the third through region, and to make the first via and the second via have a depth Increase to form three vias with different depths.
  7. 根据权利要求6所述的方法，其中，The method of claim 6 wherein
    所述在所述光阻层上形成第一贯穿区、第一凹陷部以及第二凹陷部，包括：Forming the first through region, the first recess portion, and the second recess portion on the photoresist layer, including:
    采用第四张光罩在所述光阻层上经过曝光显影形成第一贯穿区、第一凹陷部以及第二凹陷部；Forming a first through region, a first recess portion and a second recess portion on the photoresist layer by exposure and development using a fourth mask;
    其中，所述第四张光罩包括透光率依次递减的第七透光孔、第八透光孔以及第九透光孔，所述第七透光孔对应所述第一贯穿区，所述第八透光孔对应所述第一凹陷部，所述第九透光孔对应所述第二凹陷部。The fourth light mask includes a seventh light transmission hole, an eighth light transmission hole, and a ninth light transmission hole, wherein the seventh light transmission hole corresponds to the first through hole, The eighth light transmission hole corresponds to the first recessed portion, and the ninth light transmission hole corresponds to the second recessed portion.
  8. 一种功能层开孔的方法，其中，包括：A method for opening a functional layer, comprising:
    S1，在所述功能层上涂布光阻层；S1, coating a photoresist layer on the functional layer;
    S2，在所述光阻层上至少形成一类贯穿区；其中，所述贯穿区为所述光阻层上暴露所述功能层的区域；S2, at least one type of penetration region is formed on the photoresist layer; wherein the through region is a region on the photoresist layer exposing the functional layer;
    S3，对所述功能层进行刻蚀，以在对应所述贯穿区的所述功能层上形成过孔；S3, etching the functional layer to form a via hole on the functional layer corresponding to the through region;
    S4，在所述光阻层上形成新一类的贯穿区；S4, forming a new type of penetration region on the photoresist layer;
    S5，对所述功能层进行刻蚀，以在对应所述新一类的贯穿区的所述功能层上形成新的过孔，并使在本次刻蚀之前形成的所述过孔的深度增大；S5, etching the functional layer to form a new via on the functional layer corresponding to the new type of through-region, and to form a depth of the via formed before the etching Increase
    至少执行一次上述S4-S5，以形成深度不同的至少两个过孔。The above S4-S5 is performed at least once to form at least two via holes having different depths.
  9. 根据权利要求8所述的方法，其中，The method of claim 8 wherein
    所述在所述光阻层上至少形成一类贯穿区，包括：Forming at least one type of penetration region on the photoresist layer, including:
    在所述光阻层上形成第一贯穿区；Forming a first through region on the photoresist layer;
    所述对所述功能层进行刻蚀，以在对应所述贯穿区的所述功能层上形成过孔，包括：The etching the functional layer to form via holes on the functional layer corresponding to the through region includes:
    对所述功能层进行第一次刻蚀，以在对应所述第一贯穿区的所述功能层上形成第一过孔；Performing a first etching on the functional layer to form a first via hole on the functional layer corresponding to the first through region;
    所述在所述光阻层上形成新一类的贯穿区，包括：Forming a new type of penetration region on the photoresist layer, comprising:
    在所述光阻层上形成第二贯穿区，并增加所述第一贯穿区的宽度；Forming a second through region on the photoresist layer and increasing a width of the first through region;
    所述对所述功能层进行刻蚀，以在对应所述新一类的贯穿区的功能层上形成新的过孔，并使在本次刻蚀之前形成的所述过孔的深度增大，包括：Etching the functional layer to form new vias on the functional layers corresponding to the new type of through regions, and increasing the depth of the vias formed before the etching ,include:
    对所述功能层进行第二次刻蚀，以在对应所述第二贯穿区的所述功能层上形成第二过孔，并使所述第一过孔的宽度和深度增大。Performing a second etching on the functional layer to form a second via on the functional layer corresponding to the second through region, and increasing the width and depth of the first via.
  10. 根据权利要求9所述的方法，其中，The method of claim 9 wherein
    所述方法还包括：The method further includes:
    在所述光阻层上形成第三贯穿区，并增加所述第一贯穿区和所述第二贯穿区的宽度；Forming a third through region on the photoresist layer and increasing a width of the first through region and the second through region;
    对所述功能层进行第三次刻蚀，以在对应所述第三贯穿区的所述功能层上形成第三过孔，并使所述第一过孔以及所述第二过孔的宽度和深度增大，以形成宽度和深度不同的三个过孔。Performing a third etching on the functional layer to form a third via hole on the functional layer corresponding to the third through region, and width of the first via hole and the second via hole And the depth is increased to form three vias having different widths and depths.
  11. 根据权利要求10所述的方法，其中，The method of claim 10, wherein
    所述在所述光阻层上形成第一贯穿区，包括：Forming a first through region on the photoresist layer, including:
    采用第一张光罩在所述光阻层上经过曝光显影形成第一贯穿区；其中，所述第一张光罩包括第一透光孔，所述第一透光孔对应所述第一贯穿区；Forming a first through-region by exposure and development on the photoresist layer by using a first mask; wherein the first mask includes a first light-transmissive hole, and the first light-transmissive hole corresponds to the first Through zone
    所述在所述光阻层上形成第二贯穿区，并增加所述第一贯穿区的宽度，包括：Forming a second through region on the photoresist layer and increasing a width of the first through region includes:
    采用第二张光罩在所述光阻层上经过曝光显影形成第二贯穿区，并增加所述第一贯穿区的宽度；其中，所述第二张光罩包括第二透光孔和第三透光孔，所述第二透光孔对应所述第一贯穿区，所述第三透光孔对应所述第二贯穿区，所述第二透光孔和所述第三透光孔的宽度依次递减，所述第二透光孔的宽度大于所述第一透光孔；Forming a second through region on the photoresist layer by exposure and development using a second mask, and increasing a width of the first through region; wherein the second mask includes a second light transmission hole and a second a third light transmission hole corresponding to the first through hole, the third light transmission hole corresponding to the second through hole, the second light transmission hole and the third light transmission hole The width of the second light transmission hole is larger than that of the first light transmission hole;
    所述在所述光阻层上形成第三贯穿区，并增加所述第一贯穿区和所述第二贯穿区的宽度，包括：Forming a third through region on the photoresist layer and increasing a width of the first through region and the second through region, including:
    采用第三张光罩在所述光阻层上经过曝光显影形成第三贯穿区，并增加所述第一贯穿区和所述第二贯穿区的宽度；其中，所述第三张光罩包括第四透光孔、第五透光孔和第六透光孔，所述第四透光孔对应所述第一贯穿区，所述第五透光孔对应所述第二贯穿区，所述第六透光孔对应所述第三贯穿区，所述第四透光孔、所述第五透光孔和所述第六透光孔的宽度依次递减，所述第四透光孔的宽度大于所述第二透光孔，所述第五透光孔的宽度大于所述第三透光孔。Forming a third through-region by exposure development on the photoresist layer using a third mask, and increasing a width of the first through region and the second through region; wherein the third mask comprises a fourth light transmission hole, a fifth light transmission hole, and a sixth light transmission hole, wherein the fourth light transmission hole corresponds to the first through hole, and the fifth light transmission hole corresponds to the second through hole, The sixth transparent hole corresponds to the third through-region, and the widths of the fourth transparent hole, the fifth transparent hole and the sixth transparent hole are sequentially decreased, and the width of the fourth transparent hole The width of the fifth light transmission hole is larger than that of the third light transmission hole.
  12. 根据权利要求8所述的方法，其中，The method of claim 8 wherein
    所述在所述光阻层上至少形成一类贯穿区，包括：Forming at least one type of penetration region on the photoresist layer, including:
    在所述光阻层上形成第一贯穿区以及至少第一凹陷部；Forming a first through region and at least a first recess on the photoresist layer;
    所述对所述功能层进行刻蚀，以在对应所述贯穿区的所述功能层上形成过孔，包括：The etching the functional layer to form via holes on the functional layer corresponding to the through region includes:
    对所述功能层进行第一次刻蚀，以在对应所述第一贯穿区的所述功能层上形成第一过孔；Performing a first etching on the functional layer to form a first via hole on the functional layer corresponding to the first through region;
    所述在所述光阻层上形成新一类的贯穿区，包括：Forming a new type of penetration region on the photoresist layer, comprising:
    对所述第一凹陷部中的光阻进行剥离，以形成第二贯穿区；Peeling the photoresist in the first recess to form a second through region;
    所述对所述功能层进行刻蚀，以在对应所述新一类的贯穿区的所述功能层上形成新的过孔，并使在本次刻蚀之前形成的所述过孔的深度增大，包括：Etching the functional layer to form new vias on the functional layer corresponding to the new type of through regions, and to make the vias formed before the current etching Increase, including:
    对所述功能层进行第二次刻蚀，以在对应所述第二贯穿区的所述功能层上形成新的第二过孔，并使所述第一过孔的深度增大。Performing a second etching on the functional layer to form a new second via on the functional layer corresponding to the second through region and increasing the depth of the first via.
  13. 根据权利要求12所述的方法，其中，The method of claim 12, wherein
    所述在所述光阻层上形成第一贯穿区以及至少第一凹陷部，包括：Forming the first through region and the at least first recess on the photoresist layer, including:
    在所述光阻层上形成第一贯穿区、第一凹陷部以及第二凹陷部；Forming a first through region, a first recess portion, and a second recess portion on the photoresist layer;
    所述方法还包括：The method further includes:
    对所述第二凹陷部中的光阻进行剥离，以形成第三贯穿区；Stripping the photoresist in the second recess to form a third through region;
    对所述功能层进行第三次刻蚀，以在对应所述第三贯穿区的所述功能层上形成第三过孔，并使所述第一过孔以及所述第二过孔的深度增大，以形成深度不同的三个过孔。Performing a third etching on the functional layer to form a third via on the functional layer corresponding to the third through region, and to make the first via and the second via have a depth Increase to form three vias with different depths.
  14. 根据权利要求13所述的方法，其中，The method of claim 13 wherein
    所述在所述光阻层上形成第一贯穿区、第一凹陷部以及第二凹陷部，包括：Forming the first through region, the first recess portion, and the second recess portion on the photoresist layer, including:
    采用第四张光罩在所述光阻层上经过曝光显影形成第一贯穿区、第一凹陷部以及第二凹陷部；Forming a first through region, a first recess portion and a second recess portion on the photoresist layer by exposure and development using a fourth mask;
    其中，所述第四张光罩包括透光率依次递减的第七透光孔、第八透光孔以 及第九透光孔，所述第七透光孔对应所述第一贯穿区，所述第八透光孔对应所述第一凹陷部，所述第九透光孔对应所述第二凹陷部。The fourth light mask includes a seventh light transmission hole, an eighth light transmission hole, and a ninth light transmission hole, wherein the seventh light transmission hole corresponds to the first through hole, The eighth light transmission hole corresponds to the first recessed portion, and the ninth light transmission hole corresponds to the second recessed portion.
  15. 根据权利要求8所述的方法，其中，The method of claim 8 wherein
    所述功能层为显示装置中的阵列基板中的绝缘层。The functional layer is an insulating layer in the array substrate in the display device.
  16. 一种显示装置，包括阵列基板，其中，所述阵列基板包括绝缘层，所述绝缘层上包括至少两个深度不同的过孔，其中，所述至少两个深度不同的过孔是采用以下方法制作得到的：A display device includes an array substrate, wherein the array substrate includes an insulating layer, and the insulating layer includes at least two vias having different depths, wherein the at least two vias having different depths are in the following manner Made by:
    S1，在所述绝缘层上涂布光阻层；S1, coating a photoresist layer on the insulating layer;
    S2，在所述光阻层上至少形成一类贯穿区；其中，所述贯穿区为所述光阻层上暴露所述绝缘层的区域；S2, at least one type of penetration region is formed on the photoresist layer; wherein the through region is a region on the photoresist layer where the insulating layer is exposed;
    S3，对所述绝缘层进行刻蚀，以在对应所述贯穿区的所述绝缘层上形成过孔；S3, etching the insulating layer to form a via hole on the insulating layer corresponding to the through region;
    S4，在所述光阻层上形成新一类的贯穿区；S4, forming a new type of penetration region on the photoresist layer;
    S5，对所述绝缘层进行刻蚀，以在对应所述新一类的贯穿区的所述绝缘层上形成新的过孔，并使在本次刻蚀之前形成的所述过孔的深度增大；S5, etching the insulating layer to form a new via on the insulating layer corresponding to the new type of through-region, and to form a depth of the via formed before the etching Increase
    至少执行一次上述S4-S5，以形成深度不同的至少两个过孔。The above S4-S5 is performed at least once to form at least two via holes having different depths.
  17. 根据权利要求16所述的显示装置，其中，The display device according to claim 16, wherein
    所述在所述光阻层上至少形成一类贯穿区，包括：Forming at least one type of penetration region on the photoresist layer, including:
    在所述光阻层上形成第一贯穿区；Forming a first through region on the photoresist layer;
    所述对所述绝缘层进行刻蚀，以在对应所述贯穿区的所述绝缘层上形成过孔，包括：Etching the insulating layer to form via holes on the insulating layer corresponding to the through region, including:
    对所述绝缘层进行第一次刻蚀，以在对应所述第一贯穿区的所述绝缘层上形成第一过孔；Performing a first etching on the insulating layer to form a first via hole on the insulating layer corresponding to the first through region;
    所述在所述光阻层上形成新一类的贯穿区，包括：Forming a new type of penetration region on the photoresist layer, comprising:
    在所述光阻层上形成第二贯穿区，并增加所述第一贯穿区的宽度；Forming a second through region on the photoresist layer and increasing a width of the first through region;
    所述对所述绝缘层进行刻蚀，以在对应所述新一类的贯穿区的绝缘层上形 成新的过孔，并使在本次刻蚀之前形成的所述过孔的深度增大，包括：Etching the insulating layer to form new vias on the insulating layer corresponding to the new type of through regions, and increasing the depth of the vias formed before the etching ,include:
    对所述绝缘层进行第二次刻蚀，以在对应所述第二贯穿区的所述绝缘层上形成第二过孔，并使所述第一过孔的宽度和深度增大。The insulating layer is etched a second time to form a second via on the insulating layer corresponding to the second through region, and the width and depth of the first via are increased.
  18. 根据权利要求16所述的显示装置，其中，The display device according to claim 16, wherein
    所述在所述光阻层上至少形成一类贯穿区，包括：Forming at least one type of penetration region on the photoresist layer, including:
    在所述光阻层上形成第一贯穿区以及至少第一凹陷部；Forming a first through region and at least a first recess on the photoresist layer;
    所述对所述绝缘层进行刻蚀，以在对应所述贯穿区的所述绝缘层上形成过孔，包括：Etching the insulating layer to form via holes on the insulating layer corresponding to the through region, including:
    对所述绝缘层进行第一次刻蚀，以在对应所述第一贯穿区的所述绝缘层上形成第一过孔；Performing a first etching on the insulating layer to form a first via hole on the insulating layer corresponding to the first through region;
    所述在所述光阻层上形成新一类的贯穿区，包括：Forming a new type of penetration region on the photoresist layer, comprising:
    对所述第一凹陷部中的光阻进行剥离，以形成第二贯穿区；Peeling the photoresist in the first recess to form a second through region;
    所述对所述绝缘层进行刻蚀，以在对应所述新一类的贯穿区的所述绝缘层上形成新的过孔，并使在本次刻蚀之前形成的所述过孔的深度增大，包括：Etching the insulating layer to form new vias on the insulating layer corresponding to the new type of through regions, and to form a depth of the vias formed before the etching Increase, including:
    对所述绝缘层进行第二次刻蚀，以在对应所述第二贯穿区的所述绝缘层上形成新的第二过孔，并使所述第一过孔的深度增大。The insulating layer is etched a second time to form a new second via on the insulating layer corresponding to the second through region, and the depth of the first via is increased.
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