US20050260527A1 - Methods of patterning photoresist - Google Patents
Methods of patterning photoresist Download PDFInfo
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- US20050260527A1 US20050260527A1 US11/133,617 US13361705A US2005260527A1 US 20050260527 A1 US20050260527 A1 US 20050260527A1 US 13361705 A US13361705 A US 13361705A US 2005260527 A1 US2005260527 A1 US 2005260527A1
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- photoresist
- exposure
- lower layer
- substrate
- scum
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
- A61F13/00—Bandages or dressings; Absorbent pads
- A61F13/15—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators
- A61F13/42—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators with wetness indicator or alarm
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
- A61F13/00—Bandages or dressings; Absorbent pads
- A61F13/15—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators
- A61F13/42—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators with wetness indicator or alarm
- A61F2013/421—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators with wetness indicator or alarm the alarm being a temperature change
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
- A61F13/00—Bandages or dressings; Absorbent pads
- A61F13/15—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators
- A61F13/84—Accessories, not otherwise provided for, for absorbent pads
- A61F2013/8497—Accessories, not otherwise provided for, for absorbent pads having decorations or indicia means
Definitions
- the present disclosure relates to semiconductor device fabrication, and more particularly, to methods of patterning photoresist.
- Lithography is a main technology for realizing minute patterns and high integration. Using photolithography technology a pattern of a mask is printed onto a substrate. Generally, the photolithography process is performed using consecutive steps of coating a photoresist, soft-baking the photoresist, and developing the photoresist.
- the photoresist having the etching-resistant characteristics reacts to light when etching a lower layer, wherein the photoresist can be classified into a positive photoresist and a negative photoresist.
- the positive photoresist decomposition and chain scission generate on portions exposed to the light, whereby the solubility largely increases.
- the exposed portions of the positive photoresist are removed during the development process. That is, the positive photoresist has the etching-resistant characteristics and high solubility, so that the positive photoresist is generally used for the process of fabricating the high-integration semiconductor device.
- the negative photoresist bridge-construction generated on exposed portions of the negative photoresist, whereby the molecular weight largely increases.
- the exposed portions remain on the development process.
- TMAH TetraMethyl Ammonium Hydroxide
- the development process is performed using, for example, a puddle method, a spray method, or a dipping method.
- the developer is coated on the substrate, and then the photoresist is developed in a stationary state.
- the spray method the developer is continuously sprayed onto the substrate, so that it is helpful to the consecutive process.
- the spray method is disadvantageous in that it uses the large amount of developer.
- the dipping method it is impossible to apply the consecutive process.
- the dipping method uses the large amount of developer.
- the dipping method is usually used for testing performed during the process of research and development.
- the photoresist thinly remains between the patterns, thereby generating scum. Also, on the development process, because residue of photoresist remains, it also may cause the defects. Due to the scum and residue of photoresist, when etching a lower layer, the lower layer may be disturbed. Thus, a bridge is formed between lines, thereby generating a short circuit defect on the device.
- FIG. 1 is a cross sectional view of a portion of a semiconductor device showing scum and residue after developing a photoresist.
- a photoresist 12 is coated on a semiconductor substrate 10 having a lower layer 11 , and then the photoresist 12 is developed after alignment and exposure process, thereby forming a photoresist pattern. If there are scum 12 a and residue 12 b, formed by the remaining photoresist 12 , when etching the lower layer 11 by using the patterned photoresist 12 as a mask, the lower layer 11 corresponding to the scum 12 a and the residue 12 b is not etched, thereby generating the defect on a semiconductor device.
- a pad open pattern process for etching a metal pad for bonding with an external circuit to be exposed uses a relatively thick layer of photoresist and low exposure energy. Accordingly, defects such as scum are generated due to nonuniformity in thickness and exposure energy of the photoresist.
- the photoresist 12 is coated on the semiconductor substrate 10 , and then a baking process is performed to the photoresist 12 .
- PAG Photo Acid Generator
- one component of the photoresist 12 reacts on the silicon oxide layer SiO x or the silicon nitride layer SiN x , so that a new material is produced.
- the new material is not removed during the development process. That is, the new material remains as the scum.
- the pad open pattern process may have more defects of scum because the lower layer is generally formed of a silicon nitride layer.
- FIG. 2 is a flowchart of a photolithography process according to the related art.
- a surface treatment is performed to a substrate, so that it is possible to enhance an adhesive strength to a photoresist.
- the photoresist is coated on the substrate (S 100 ).
- the substrate is treated with a material for improving the resistance to moisture by making the surface of substrate hydrophobic.
- the material may be, for example, HMDS (Hexa Methyldisilazane) and a nitrogen gas that are together introduced to a tank and vapor-coated on the substrate.
- a mask is aligned above the substrate, and then an exposure process is performed thereto (S 101 ).
- the soft-baking process is performed to remove a solution from the photoresist, wherein it is necessary to preset a temperature condition that does not pyrolyze the components of photoresist.
- PEB Post-Exposure Baking
- the photoresist is removed (S 104 ).
- the related art photoresist pattern process has the following disadvantages.
- the defects such as scum and residue may generate.
- the scum and residue disturb the etching of lower layer, whereby the bridge generates between the lines, thereby causing the short defect on the device.
- FIG. 1 is a cross sectional view of a portion of a semiconductor device showing scum and residue of photoresist after performing a development process to the photoresist.
- FIG. 2 is a flowchart of a photolithography process according to the related art.
- FIG. 3 is a flowchart of one example disclosed photolithography process.
- FIG. 4 is a graph showing a relation between a thickness of photoresist and threshold energy.
- FIG. 5 is a graph of showing a relation between exposure energy and a thickness of photoresist after performing a development process to the photoresist.
- FIG. 3 is a flowchart of an example disclosed photolithography process.
- a lower layer is first formed on a substrate, and then a surface treatment is performed to the lower layer of the substrate, to enhance an adhesive strength when forming a photoresist on the lower layer.
- the photoresist is coated on the lower layer of the substrate (S 200 ).
- a material for the lower layer is not limited.
- an oxygen plasma treatment is performed to the lower layer to improve the surface quality of the lower layer, so that it is possible to prevent defects such as scum.
- the surface quality of the lower layer is improved by the oxygen plasma treatment.
- the silicon nitride layer generally remains on a metal layer for formation of pad. In this case, it is possible to remove the cause of generating the scum by performing the oxygen plasma treatment.
- the oxygen plasma treatment changes the surface characteristics of the lower layer, whereby a Si—N bonding structure is changed to a Si—O bonding structure in the surface of the lower layer. Accordingly, the surface of the lower layer has the hydrophile property, so that it is possible to prevent the reaction between the photoresist and the lower layer, thereby preventing the defects such as scum.
- an exposure process is performed after aligning a mask on the substrate (S 201 ).
- the soft-baking process is performed to remove a solvent from the photoresist.
- the soft-baking process is set to an appropriate temperature level not to pyrolyze the photoresist.
- various steps are performed as follows: reading a position of alignment mark remaining on the substrate with an alignment sensor; measuring a position error by comparing the position of alignment mark remaining on the substrate with other alignment mark previously set in a job file; calculating translation, rotation and expansion data of the substrate with the position error; measuring an exposure position with the calculated data; and exposing the substrate.
- the mask may be used as a general mask formed by sequentially depositing chrome and oxide chrome on a quartz substrate.
- the mask may be formed of a reflective mask or a phase shift mask.
- an eximer laser light source may be used.
- a KrF laser having a wavelength of 248 nanometers (nm) corresponding to a DUV (Deep Ultraviolet) region and ArF laser having a wavelength of 193 nm, as well as g-line of 436 nm, i-line of 365 nm, h-line of 405 nm and a broad band of 240 nm to 440 nm, emitted from a mercury or xenon (Xe) lamp may be used.
- a first development process is performed to the photoresist (S 202 ).
- a PEB process is performed to improve uniformity in line width of the substrate.
- a wet etching process of using an alkali water solution as a developer may be used.
- the chief ingredients of the wet etch process are TetraMethyl Ammonium Hydroxide (hereinafter, referred to as TMAH).
- TMAH TetraMethyl Ammonium Hydroxide
- the scum and residue of photoresist may remain.
- a second development process is performed as follows, to completely remove the defects such as scum and residue.
- an entire-surface exposure process is performed (S 203 ).
- it uses the same light source as that of the aforementioned exposure process (S 201 ).
- the step of aligning the mask on the substrate is not required in case of using low exposure energy suitable for selectively removing the scum and residue of photoresist without any influence to the photoresist pattern. That is, the exposure energy is set to an appropriate level not to perform the exposure process including the substrate alignment process.
- the exposure energy is controlled to an appropriate level not to perform the exposure process for removing the photoresist on the development process.
- a threshold energy value which is a minimum value for removing the photoresist on the development process.
- the exposure energy which can selectively remove the scum and residue of photoresist without any influence to the photoresist pattern since it has a higher value as the photoresist becomes thicker, and it has a lower value as the photoresist becomes thinner. Accordingly, as shown in FIG. 5 , if the exposure energy is applied to the entire surface of the substrate at a level for developing the thickness of photoresist between 5% and 20%, advantageously, approx. 10%, it is possible to selectively remove the scum and residue of photoresist.
- the exposure process doesn't cause a bottle neck in the entire fabrication process, it is possible to obtain the more precise pattern by aligning the mask for patterning the photoresist and performing the exposure process.
- a positive photoresist may be used in which a portion exposed to the light is removed.
- the positive photoresist may be formed of a novolak type composition, a chemical amplification composition, or a chain scission composition.
- the scum and residue of photoresist are removed by performing a second development process (S 204 ).
- the second development process uses the same developer as that in the first development process.
- the foregoing discloses example methods of patterning a photoresist that substantially obviate one or more problems due to limitations and disadvantages of the related art.
- the disclosed example methods improve precision in pattern and prevent defects such as scum, by additionally performing an entire-surface exposure process and a development process after firstly performing an exposure and development process to a photoresist coated on a substrate.
- a method for patterning a photoresist pattern includes forming a photoresist on a substrate having a lower layer; performing a first exposure process to the photoresist in state of positioning a mask on the photoresist; performing a first development process to the photoresist; performing a second entire-surface exposure process to the photoresist; and performing a second development process to the photoresist.
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Abstract
Description
- The present disclosure relates to semiconductor device fabrication, and more particularly, to methods of patterning photoresist.
- With the recent development in information media such as computers, technology for manufacturing semiconductor devices has also developed rapidly. Accordingly, the semiconductor device has been researched and studied to obtain a high integration, a minute pattern, and a rapid operation speed. Thus, it is necessary to develop a minute pattern technology, such as a lithography process, for improving the integration of semiconductor device.
- Lithography is a main technology for realizing minute patterns and high integration. Using photolithography technology a pattern of a mask is printed onto a substrate. Generally, the photolithography process is performed using consecutive steps of coating a photoresist, soft-baking the photoresist, and developing the photoresist.
- The photoresist having the etching-resistant characteristics reacts to light when etching a lower layer, wherein the photoresist can be classified into a positive photoresist and a negative photoresist. In case of the positive photoresist, decomposition and chain scission generate on portions exposed to the light, whereby the solubility largely increases. Thus, the exposed portions of the positive photoresist are removed during the development process. That is, the positive photoresist has the etching-resistant characteristics and high solubility, so that the positive photoresist is generally used for the process of fabricating the high-integration semiconductor device. In the meantime, in case of the negative photoresist, bridge-construction generated on exposed portions of the negative photoresist, whereby the molecular weight largely increases. Thus, the exposed portions remain on the development process.
- Through the development process, the photoresist changed by exposure is selectively removed, and a pattern of mask is printed onto a substrate. In this case, a wet etching is generally used, wherein the wet etching uses an alkali water solution as a developer, the chief ingredients of which are TetraMethyl Ammonium Hydroxide (hereinafter, referred to as TMAH).
- To obtain the desired pattern, the development process is performed using, for example, a puddle method, a spray method, or a dipping method. In the puddle method, the developer is coated on the substrate, and then the photoresist is developed in a stationary state. In case of the spray method, the developer is continuously sprayed onto the substrate, so that it is helpful to the consecutive process. However, the spray method is disadvantageous in that it uses the large amount of developer. Also, in case of the dipping method, it is impossible to apply the consecutive process. In addition, the dipping method uses the large amount of developer. Thus, the dipping method is usually used for testing performed during the process of research and development.
- After completing the development process, the photoresist thinly remains between the patterns, thereby generating scum. Also, on the development process, because residue of photoresist remains, it also may cause the defects. Due to the scum and residue of photoresist, when etching a lower layer, the lower layer may be disturbed. Thus, a bridge is formed between lines, thereby generating a short circuit defect on the device.
-
FIG. 1 is a cross sectional view of a portion of a semiconductor device showing scum and residue after developing a photoresist. Referring toFIG. 1 , aphotoresist 12 is coated on asemiconductor substrate 10 having alower layer 11, and then thephotoresist 12 is developed after alignment and exposure process, thereby forming a photoresist pattern. If there are scum 12 a andresidue 12 b, formed by theremaining photoresist 12, when etching thelower layer 11 by using the patternedphotoresist 12 as a mask, thelower layer 11 corresponding to thescum 12 a and theresidue 12 b is not etched, thereby generating the defect on a semiconductor device. - A pad open pattern process for etching a metal pad for bonding with an external circuit to be exposed, uses a relatively thick layer of photoresist and low exposure energy. Accordingly, defects such as scum are generated due to nonuniformity in thickness and exposure energy of the photoresist.
- If the
lower layer 11 is formed of a silicon oxide layer SiOx or a silicon nitride layer SiNx, thephotoresist 12 is coated on thesemiconductor substrate 10, and then a baking process is performed to thephotoresist 12. Thus, PAG (Photo Acid Generator), one component of thephotoresist 12, reacts on the silicon oxide layer SiOx or the silicon nitride layer SiNx, so that a new material is produced. In this case, because the reactivity between the new material and the developer is low, the new material is not removed during the development process. That is, the new material remains as the scum. Also, the pad open pattern process may have more defects of scum because the lower layer is generally formed of a silicon nitride layer. - A lithography process including the photoresist pattern process according to the related art is described below with respect to
FIG. 2 , which is a flowchart of a photolithography process according to the related art. - First, a surface treatment is performed to a substrate, so that it is possible to enhance an adhesive strength to a photoresist. Then, the photoresist is coated on the substrate (S100). At this time, in order to enhance the adhesive strength to the photoresist, the substrate is treated with a material for improving the resistance to moisture by making the surface of substrate hydrophobic. The material may be, for example, HMDS (Hexa Methyldisilazane) and a nitrogen gas that are together introduced to a tank and vapor-coated on the substrate.
- Next, after performing a soft-baking process, a mask is aligned above the substrate, and then an exposure process is performed thereto (S101). In this case, the soft-baking process is performed to remove a solution from the photoresist, wherein it is necessary to preset a temperature condition that does not pyrolyze the components of photoresist.
- After that, a Post-Exposure Baking (PEB) process is performed to cure the photoresist, and then a development process is performed thereto (S102). At this time, when light interference generates at a corner of a light-shielding part in the mask, it is impossible to precisely define a desired pattern onto the substrate, thereby generating a standing wave. In order to solve this problem, the PEB process is performed to improve uniformity on width of line in the substrate.
- Then, after obtaining the desired pattern by etching a lower layer (S103), the photoresist is removed (S104). However, the related art photoresist pattern process has the following disadvantages.
- In case of patterning the photoresist by exposure and development, the defects such as scum and residue may generate. The scum and residue disturb the etching of lower layer, whereby the bridge generates between the lines, thereby causing the short defect on the device.
-
FIG. 1 is a cross sectional view of a portion of a semiconductor device showing scum and residue of photoresist after performing a development process to the photoresist. -
FIG. 2 is a flowchart of a photolithography process according to the related art. -
FIG. 3 is a flowchart of one example disclosed photolithography process. -
FIG. 4 is a graph showing a relation between a thickness of photoresist and threshold energy. -
FIG. 5 is a graph of showing a relation between exposure energy and a thickness of photoresist after performing a development process to the photoresist. - Hereinafter, methods for patterning a photoresist are described with reference to the accompanying drawings. The disclosed methods for patterning photoresist improve the precision of pattern formation and prevent defects such as scum
-
FIG. 3 is a flowchart of an example disclosed photolithography process. According to one example of the disclosed process, a lower layer is first formed on a substrate, and then a surface treatment is performed to the lower layer of the substrate, to enhance an adhesive strength when forming a photoresist on the lower layer. Then, the photoresist is coated on the lower layer of the substrate (S200). At this time, a material for the lower layer is not limited. Also, according to one example, before coating the photoresist an oxygen plasma treatment is performed to the lower layer to improve the surface quality of the lower layer, so that it is possible to prevent defects such as scum. Especially, in case the lower layer is formed of a silicon oxide layer or a silicon nitride layer the surface quality of the lower layer is improved by the oxygen plasma treatment. During a pad open process of generating the defects such as scum, the silicon nitride layer generally remains on a metal layer for formation of pad. In this case, it is possible to remove the cause of generating the scum by performing the oxygen plasma treatment. - The oxygen plasma treatment changes the surface characteristics of the lower layer, whereby a Si—N bonding structure is changed to a Si—O bonding structure in the surface of the lower layer. Accordingly, the surface of the lower layer has the hydrophile property, so that it is possible to prevent the reaction between the photoresist and the lower layer, thereby preventing the defects such as scum.
- Next, an exposure process is performed after aligning a mask on the substrate (S201). Before aligning the mask and performing the exposure process, it is necessary to perform a soft-baking process. The soft-baking process is performed to remove a solvent from the photoresist. Also, the soft-baking process is set to an appropriate temperature level not to pyrolyze the photoresist. According to one example, after the soft-baking process, various steps are performed as follows: reading a position of alignment mark remaining on the substrate with an alignment sensor; measuring a position error by comparing the position of alignment mark remaining on the substrate with other alignment mark previously set in a job file; calculating translation, rotation and expansion data of the substrate with the position error; measuring an exposure position with the calculated data; and exposing the substrate.
- The mask may be used as a general mask formed by sequentially depositing chrome and oxide chrome on a quartz substrate. In addition, the mask may be formed of a reflective mask or a phase shift mask. Also, an eximer laser light source may be used. For example, a KrF laser having a wavelength of 248 nanometers (nm) corresponding to a DUV (Deep Ultraviolet) region and ArF laser having a wavelength of 193 nm, as well as g-line of 436 nm, i-line of 365 nm, h-line of 405 nm and a broad band of 240 nm to 440 nm, emitted from a mercury or xenon (Xe) lamp may be used.
- Next, a first development process is performed to the photoresist (S202). Before performing the first development process, according to an example, a PEB process is performed to improve uniformity in line width of the substrate. Also, a wet etching process of using an alkali water solution as a developer may be used. In one example, the chief ingredients of the wet etch process are TetraMethyl Ammonium Hydroxide (hereinafter, referred to as TMAH). In this case, it is possible to remove the considerable amount of scum and residue of the photoresist by performing an oxygen plasma treatment to the lower layer. However, after the completing the first development process, the scum and residue of photoresist may remain. Thus, a second development process is performed as follows, to completely remove the defects such as scum and residue.
- After that, an entire-surface exposure process is performed (S203). When performing the entire-surface exposure process, it uses the same light source as that of the aforementioned exposure process (S201). Also, the step of aligning the mask on the substrate is not required in case of using low exposure energy suitable for selectively removing the scum and residue of photoresist without any influence to the photoresist pattern. That is, the exposure energy is set to an appropriate level not to perform the exposure process including the substrate alignment process.
- As shown in
FIG. 4 , the exposure energy is controlled to an appropriate level not to perform the exposure process for removing the photoresist on the development process. - Referring to
FIG. 4 , there is a threshold energy value, which is a minimum value for removing the photoresist on the development process. Generally, there is the exposure energy, which can selectively remove the scum and residue of photoresist without any influence to the photoresist pattern since it has a higher value as the photoresist becomes thicker, and it has a lower value as the photoresist becomes thinner. Accordingly, as shown inFIG. 5 , if the exposure energy is applied to the entire surface of the substrate at a level for developing the thickness of photoresist between 5% and 20%, advantageously, approx. 10%, it is possible to selectively remove the scum and residue of photoresist. - Accordingly, as the entire-surface exposure process is performed, it is possible to improve the precision in forming the pattern, and to prevent the scum and residue of photoresist, without the increase of the fabrication cost and time.
- However, if the exposure process doesn't cause a bottle neck in the entire fabrication process, it is possible to obtain the more precise pattern by aligning the mask for patterning the photoresist and performing the exposure process.
- To remove the scum and residue of photoresist by performing the entire-surface exposure process, a positive photoresist may be used in which a portion exposed to the light is removed. For example, the positive photoresist may be formed of a novolak type composition, a chemical amplification composition, or a chain scission composition.
- Next, the scum and residue of photoresist are removed by performing a second development process (S204). In one example, the second development process uses the same developer as that in the first development process.
- Then, after etching the lower layer (S205), the photoresist is removed (S206). In case of the pad open process, a metal pad for bonding with an external circuit is exposed by etching the lower layer.
- The example disclosed methods for patterning the photoresist by photolithography makes it possible to improve the precision in forming the pattern, and to prevent the scum and residue of photoresist, with the small fabrication cost and time.
- The foregoing discloses example methods of patterning a photoresist that substantially obviate one or more problems due to limitations and disadvantages of the related art. In particular, the disclosed example methods improve precision in pattern and prevent defects such as scum, by additionally performing an entire-surface exposure process and a development process after firstly performing an exposure and development process to a photoresist coated on a substrate.
- As disclosed above, according to one example, a method for patterning a photoresist pattern includes forming a photoresist on a substrate having a lower layer; performing a first exposure process to the photoresist in state of positioning a mask on the photoresist; performing a first development process to the photoresist; performing a second entire-surface exposure process to the photoresist; and performing a second development process to the photoresist.
- This patent application makes reference to, incorporates the same herein, and claims all benefits accruing under 35 U.S.C. §119 from an application for METHOD FOR PATTERNING PHOTORESIST filed in the Korean Industrial Property Office on May 20, 2004, and there duly assigned Serial No. P2004-35850.
- Although certain apparatus constructed in accordance with the teachings of the invention have been described herein, the scope of coverage of this patent is not limited thereto. On the contrary, this patent covers every apparatus, method and article of manufacture fairly falling within the scope of the appended claims either literally or under the doctrine of equivalents.
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KRP2004-0035850 | 2004-05-20 | ||
KR1020040035850A KR100598290B1 (en) | 2004-05-20 | 2004-05-20 | Method of patterning photoresist in lithography process |
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US11/024,706 Expired - Fee Related US7491648B2 (en) | 2004-05-20 | 2004-12-30 | Method of patterning a photoresist film using a lithographic |
US11/133,617 Abandoned US20050260527A1 (en) | 2004-05-20 | 2005-05-20 | Methods of patterning photoresist |
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US20060104164A1 (en) * | 2004-11-16 | 2006-05-18 | Ives Thomas W | Effecting dynamic measurement of low mass devices |
US20060286804A1 (en) * | 2005-06-15 | 2006-12-21 | Chuan-Yi Wu | Method for forming patterned material layer |
CN107818945A (en) * | 2017-10-25 | 2018-03-20 | 武汉华星光电半导体显示技术有限公司 | A kind of method, array base palte and the display device of functional layer perforate |
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KR100598290B1 (en) * | 2004-05-20 | 2006-07-07 | 동부일렉트로닉스 주식회사 | Method of patterning photoresist in lithography process |
JP4979641B2 (en) * | 2007-06-20 | 2012-07-18 | キヤノン株式会社 | Method for manufacturing liquid discharge head |
US8435728B2 (en) * | 2010-03-31 | 2013-05-07 | Tokyo Electron Limited | Method of slimming radiation-sensitive material lines in lithographic applications |
US10319582B2 (en) * | 2017-04-27 | 2019-06-11 | Lam Research Corporation | Methods and apparatus for depositing silicon oxide on metal layers |
KR102640972B1 (en) * | 2021-05-28 | 2024-02-23 | 부산대학교 산학협력단 | Manufacturing method for copper with surface coated silicon, copper with permanent oxidation resistance by silicon-coated surface thereof and semiconductor system thereof |
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US20060104164A1 (en) * | 2004-11-16 | 2006-05-18 | Ives Thomas W | Effecting dynamic measurement of low mass devices |
US7448273B2 (en) * | 2004-11-16 | 2008-11-11 | Hewlett-Packard Development Company, L.P. | Effecting dynamic measurement of low mass devices |
US20060286804A1 (en) * | 2005-06-15 | 2006-12-21 | Chuan-Yi Wu | Method for forming patterned material layer |
CN107818945A (en) * | 2017-10-25 | 2018-03-20 | 武汉华星光电半导体显示技术有限公司 | A kind of method, array base palte and the display device of functional layer perforate |
WO2019080333A1 (en) * | 2017-10-25 | 2019-05-02 | 武汉华星光电半导体显示技术有限公司 | Method for forming holes in functional layer and display device |
Also Published As
Publication number | Publication date |
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KR100598290B1 (en) | 2006-07-07 |
US20050260860A1 (en) | 2005-11-24 |
US7491648B2 (en) | 2009-02-17 |
KR20050110891A (en) | 2005-11-24 |
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