WO2019076141A1 - 真空镀膜设备 - Google Patents

真空镀膜设备 Download PDF

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Publication number
WO2019076141A1
WO2019076141A1 PCT/CN2018/102749 CN2018102749W WO2019076141A1 WO 2019076141 A1 WO2019076141 A1 WO 2019076141A1 CN 2018102749 W CN2018102749 W CN 2018102749W WO 2019076141 A1 WO2019076141 A1 WO 2019076141A1
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Prior art keywords
temperature
working chamber
vacuum coating
coating apparatus
temperature sensor
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PCT/CN2018/102749
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English (en)
French (fr)
Inventor
杨斌
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君泰创新（北京）科技有限公司
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Publication of WO2019076141A1 publication Critical patent/WO2019076141A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00—Thermometers specially adapted for specific purposes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Definitions

  • the present disclosure relates to the field of solar cell manufacturing, and more particularly to a vacuum coating apparatus.
  • Thin film battery manufacturing equipment includes physical vapor deposition PVD equipment, copper indium gallium selenide evaporation equipment (CIGS equipment) and other equipment.
  • Some embodiments of the present disclosure provide a vacuum coating apparatus including: a working chamber configured to accommodate a substrate therein, wherein the working chamber is provided with: a heater; a first temperature sensor configured to Measuring the temperature of the heater; and one or more second temperature sensors configured to measure an ambient temperature within the working chamber.
  • the heater is disposed on top of the working chamber; one or more of the second temperature sensors are disposed at a bottom of the working chamber.
  • the heater is disposed on top of the working chamber; one or more of the second temperature sensors are disposed on a sidewall of the working chamber.
  • the top of the working chamber is provided with an opening
  • the vacuum coating apparatus further includes a top cover configured to block the opening;
  • the heater is disposed adjacent to the top cover
  • the inside of the working chamber is on one side;
  • the first temperature sensor is disposed at the top of the working chamber.
  • the heater is a heating wire.
  • the vacuum coating apparatus further includes: a thermostat configured to receive a first measurement of the first temperature sensor and a second of the at least one second temperature sensor Measuring a value, and calculating a temperature at the substrate according to the first measured value and the second measured value, and generating an instruction for controlling the heater to adjust the heating power according to the calculated temperature at the substrate .
  • the thermostat is further configured to calculate a temperature at the substrate based on the first measured value and the second measured value and an existing thermal field simulation model within the working chamber, Or establishing a thermal field simulation model in the working cavity according to the first measurement value and the second measurement value, and calculating a temperature at the substrate according to the thermal field simulation model.
  • the thermostat is further configured to determine whether the temperature at the substrate is within a preset process temperature range, and in a determination that the temperature at the substrate is not within the process temperature range An instruction to adjust the heating power of the heater is generated until the temperature at the substrate is within the process temperature range.
  • the first temperature sensor and/or the at least one second temperature sensor are thermocouples.
  • the vacuum coating apparatus further includes a gasket configured to seal a gap between the top cover and the opening and secure the top cover.
  • the working chamber includes a heating chamber, a process chamber, and a cooling chamber.
  • the first temperature sensor has a set distance from the bottom of the working chamber.
  • the working chamber further includes a sheeting chamber and a sheeting chamber.
  • the heater wire is soldered to the top cover.
  • the second temperature sensor is welded to the bottom of the working chamber.
  • the first temperature sensor is wound and secured to the heater.
  • the bottom of the working chamber is provided with a mounting hole in which the second temperature sensor disposed at the bottom of the working chamber of the hand is fixed.
  • the second temperature sensor is secured in the mounting aperture by a bolt.
  • FIG. 1 is a schematic view of a vacuum coating apparatus according to some embodiments of the present disclosure
  • FIG. 2 is a schematic view of another vacuum coating apparatus according to some embodiments of the present disclosure.
  • Figure 3 is an enlarged view of a portion A of Figure 1;
  • FIG. 4 is a schematic structural view of a working chamber in accordance with some embodiments of the present disclosure.
  • Some embodiments of the present disclosure provide a vacuum coating apparatus, as shown in FIG. 1, comprising: a working chamber 1 configured to accommodate a substrate 4 therein. Wherein the working chamber 1 is provided with: a heater 5; a first temperature sensor 6 configured to measure the temperature of the heater; and one or more second temperature sensors 7 configured to measure the working chamber 1 The ambient temperature inside.
  • the ambient temperature of the working chamber 1 changes due to changes in the temperature of the chamber wall, chamber maintenance, replacement of parts, or long-term process, which causes the temperature of the substrate to change.
  • the embodiment of the present disclosure facilitates subsequent correction of the ambient temperature by feedback of the first temperature sensor 6 and the second temperature sensor 7, thereby ensuring a constant temperature at the substrate 4 to ensure excellent process results.
  • the second temperature sensor 7 can be provided in plurality. The specific setting position of the second temperature sensor 7 is not limited, and those skilled in the art can set according to actual needs.
  • the heating of the substrate by the thin film process equipment is mainly by radiant heating of the heater and the chamber and conduction heating of the air.
  • the process equipment is in a high vacuum state, and the effect of air conduction heating is small. Therefore, the temperature of the substrate is mainly due to the radiation at the top of the heater and the bottom of the chamber.
  • the first temperature sensor 6 measures the temperature of the heater
  • the second temperature sensor 7 measures the temperature of a specific point in the internal space of the working chamber to measure the ambient temperature in the working chamber 1.
  • the specific point refers to the position of the second temperature sensor 7.
  • the distance between the second temperature sensor 7 and the first temperature sensor 6 is known.
  • the ambient temperature in the working chamber 1 is determined based on the temperature of the specific point measured by each of the plurality of second temperature sensors 7, for example, by averaging, or removing the highest and lowest temperatures. After averaging, etc., the ambient temperature in the working chamber 1 is obtained.
  • the space temperature at the substrate 4 can be determined based on the measured temperature of the heater and the temperature at a specific point by heating simulation or experimental measurement. Thus, if the chamber environment changes, the temperature control process can be corrected by the feedback of the first temperature sensor 6 and the second temperature sensor 7, thereby ensuring a constant temperature at the substrate 4, and ensuring excellent process results.
  • a thermal field simulation model in the working cavity may be established according to the first measurement value of the first temperature sensor 6 and the second measurement value of the second temperature sensor 7, and according to the thermal field simulation The model calculates the temperature at the substrate. Therefore, the set position of the second temperature sensor 7 can be optimized in accordance with the requirements that contribute to better establishing the thermal field simulation model.
  • a thermal field simulation model within the working chamber is established based on the second measured value measured by each of the plurality of second temperature sensors 7 and the first measured value of the first temperature sensor 6.
  • the second temperature sensor 7 is disposed on an inner wall of the working chamber 1 remote from the first temperature sensor 6.
  • the second temperature sensor 7 is disposed at the bottom or side wall of the working chamber 1.
  • the vacuum coating apparatus includes a working chamber 1 for accommodating the substrate 4.
  • the top of the working chamber 1 is provided with an opening 9 which is closed by the top cover 2.
  • the heater 5 is disposed on a side of the top cover 2 adjacent to the inside of the working chamber 1; the first temperature sensor 6 is disposed at the top of the working chamber 1; and the at least one second temperature sensor One of the 7 is disposed at the bottom of the working chamber 1.
  • the opening 9 and the top cover 2 are provided to facilitate setting and replacing the heater 5.
  • the top cover 2 on which the heater is mounted can be selected from a special heat resistant material.
  • the substrate 4 enters the working chamber from one side of the working chamber 1 and is output from the other side of the working chamber 1.
  • the working chamber 1 includes a heating chamber 11, a process chamber 12, and a cooling chamber 13, and the heating chamber 11, the processing chamber 12, and the cooling chamber 13 are used together to complete the coating process of the substrate.
  • the vacuum coating apparatus further includes a wafer chamber 14 and a sheet ejection chamber 15.
  • the arrow shown in FIG. 2 refers to the traveling direction of the substrate 4.
  • the heater 5, the first temperature sensor 6, and the second temperature sensor 7 are disposed within the process chamber.
  • the heater 5 is a heating wire 5.
  • the heating wire 5 is welded to the top cover 2. In other embodiments, the heating wire 5 is secured to the top cover 2 by other means.
  • the first temperature sensor 6 is configured to measure the temperature of the heating wire 5. In some embodiments, one end of the first temperature sensor 6 passes through the top cover 2 and the other end is located between the heating wire 5 and the top cover 2. In other embodiments, in order to facilitate installation of the first temperature sensor 6, the installation process difficulty and installation cost are reduced, and the first temperature sensor 6 is wound around the heating wire 5.
  • the second temperature sensor 7 is configured to measure the ambient temperature within the working chamber 1.
  • the second temperature sensor 7 is soldered to the bottom of the working chamber 1.
  • the second temperature sensor 7 is otherwise secured.
  • a mounting hole 10 is provided at the bottom of the working chamber 1, and a second temperature sensor 7 disposed at the bottom of the working chamber is fixed in the mounting hole 10.
  • the second temperature sensor 7 is fixed in the mounting hole 10 by a bolt 71.
  • both the first temperature sensor 6 and the second temperature sensor 7 employ thermocouples. Of course, other devices can also be used to achieve temperature collection.
  • the vacuum coating apparatus further includes: a thermostat 8 configured to receive the first measurement value of the first temperature sensor 6 and the at least one a second measurement value of the temperature sensor 7, and calculating a temperature at the substrate 4 according to the first measurement value and the second measurement value, and generating a control for the temperature at the substrate 4 according to the calculated temperature
  • the heater 5 adjusts the command of the heating power.
  • the thermostat 8 is further configured to calculate the substrate 4 according to the first measured value and the second measured value and an existing thermal field simulation model in the working chamber 1 The temperature is calculated, or the thermal field simulation model is established according to the first measurement value and the second measurement value, and the temperature at the substrate 4 is calculated according to the thermal field simulation model.
  • the first temperature sensor 6 senses the temperature of the heating wire 5, and the second temperature sensor 7 senses the ambient temperature in the working chamber 1.
  • the temperature T1 measured by the first temperature sensor 6 and the temperature T2 measured by the second temperature sensor 7 are used to establish a thermal field simulation model, or the temperature measured using the first temperature sensor 6.
  • the thermal field simulation model is established by the T1 and the second temperature sensor 7 in combination with the pre-stored existing data, and the temperature at the substrate 4 is calculated according to the thermal field simulation model.
  • Existing data used in building a thermal field simulation model may not be necessary, but to achieve more accurate temperature control, such existing data may include, but is not limited to, internal structural information such as working chamber 1 and radiation characteristic information of internal structure. It may also include some temperature data measured during the previous process. In other words, when the heating simulation experiment is first performed, a large amount of data input is required to establish a temperature database corresponding to the thermal field simulation model. After the measured temperature, the result can be directly called from the temperature database, no need to do simulation experiments.
  • the thermal field simulation model described above is a 3D thermal field simulation model of the working chamber 1.
  • the 3D thermal field simulation model is based on the mechanical 3D drawings of the actual equipment, and T1 and T2 are simulated as a set of inputs for the simulation model.
  • the thermostat 8 is further configured to determine whether the temperature at the substrate 4 is within a preset process temperature range, and in the determination that the temperature at the substrate 4 is not in the process In the temperature range, an instruction to adjust the heating power of the heater (heating wire 5) is generated until the temperature at the substrate 4 is within the process temperature range.
  • the temperature T3 is compared with the end point value of the process temperature range. If the temperature T3 is not within the process temperature range, the heating power of the heating wire is adjusted. The above comparison and adjustment steps are repeated until the temperature T3 at the substrate is within the process temperature range. In this way, the accuracy of measuring the temperature is increased, thereby improving the quality of the process.
  • the process temperature range is the temperature range in the process parameters set by the process personnel, and can be input to the thermostat 8 or the host communicatively connected to the thermostat 8 through the operation interface.
  • the vacuum coating apparatus further includes a gasket 3 disposed between the top cover 2 and the opening, the gasket 3 being configured to face the top cover 2 and the opening The gap is sealed and the top cover 2 is fixed.
  • the first temperature sensor 6 has a set distance from the bottom of the working chamber 1 in accordance with the requirements of the size and temperature test of the working chamber 1.
  • the distance between the first temperature sensor 6 and the bottom of the working chamber 1 is constant, which ensures that the thermal field formed by the first temperature sensor 6 in the working chamber 1 does not change, that is, the corresponding temperature database is valid. If this distance is adjusted, you will need to redo the temperature simulation experiment and re-establish the database.
  • the heating wire 5 is disposed to extend along the course of the substrate 4 to heat the substrate 4 more uniformly and uniformly.
  • a plurality of second temperature sensors 7 may be provided, which may be evenly distributed at the bottom of the working chamber 1.

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  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Physical Vapour Deposition (AREA)

Abstract

一种真空镀膜设备，包括工作腔（1），工作腔（1）配置为在其内部容纳基板（4）。工作腔（1）内设置有：加热器（5）、第一温度传感器（6）和一个或多个第二温度传感器（7）。第一温度传感器（6）配置为测量加热器（5）的温度。第二温度传感器（7）配置为测量工作腔（1）内的环境温度。

Description

真空镀膜设备
本申请要求于2017年10月16日提交中国专利局、申请号为201721331755.5、发明名称为“真空镀膜设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及太阳能电池制造领域，尤其涉及一种真空镀膜设备。
背景技术
在薄膜太阳能电池的制备过程中，温度是重要的参数之一。薄膜电池的制造设备包括物理气相沉积PVD设备、铜铟镓硒蒸镀设备(CIGS设备)等设备。
发明内容
本公开一些实施例提供了一种真空镀膜设备，包括：工作腔，所述工作腔配置为在其内部容纳基板，其中，所述工作腔内设置有：加热器；第一温度传感器，配置为测量所述加热器的温度；以及一个或多个第二温度传感器，配置为测量所述工作腔内的环境温度。
在一些实施例中，所述加热器设置在所述工作腔的顶部；一个或多个所述第二温度传感器设置在所述工作腔的底部。
在一些实施例中，所述加热器设置在所述工作腔的顶部；一个或多个所述第二温度传感器设置在所述工作腔的侧壁。
在一些实施例中，所述工作腔的顶部设置有开口，所述真空镀膜设备还包括顶盖，所述顶盖配置为封堵所述开口；所述加热器设置在所述顶盖的邻近所述工作腔内部的一侧上；所述第一温度传感器设置在所述工作腔的顶部。
在一些实施例中，所述加热器为加热丝。
在一些实施例中，所述的真空镀膜设备还包括：温控器，所述温控器配置为接收所述第一温度传感器的第一测量值和所述至少一个第二温度传感器的第二测量值，并根据所述第一测量值和所述第二测量值计算所述基板处的温度，并根据计算出的所述基板处的温度生 成用于控制所述加热器调整加热功率的指令。
在一些实施例中，所述温控器还配置为根据所述第一测量值和所述第二测量值以及已有的所述工作腔内的热场仿真模型计算所述基板处的温度，或者，根据所述第一测量值和所述第二测量值建立所述工作腔内的热场仿真模型，并根据所述热场仿真模型计算所述基板处的温度。
在一些实施例中，所述温控器还配置为，判断所述基板处的温度是否处于预设的工艺温度范围内，并在判断结果为所述基板处的温度不在所述工艺温度范围内时，生成调整所述加热器的加热功率的指令，直至所述基板处的温度处于所述工艺温度范围内。
在一些实施例中，所述第一温度传感器和/或所述至少一个第二温度传感器为热电偶。
在一些实施例中，所述真空镀膜设备还包括配置为对所述顶盖与所述开口之间的间隙进行密封并固定所述顶盖的密封垫。
在一些实施例中，所述工作腔包括加热腔、工艺腔和冷却腔。
在一些实施例中，所述第一温度传感器与所述工作腔的底部之间具有设定距离。
在一些实施例中，所述工作腔还包括进片腔和出片腔。
在一些实施例中，所述加热丝焊接在所述顶盖上。
在一些实施例中，所述第二温度传感器焊接到所述工作腔的底部。
在一些实施例中，所述第一温度传感器缠绕固定在所述加热器上。
在一些实施例中，所述工作腔的底部设置有安装孔，设置在手上工作腔的底部的所述第二温度传感器固定在所述安装孔中。
在一些实施例中，所述第二温度传感器通过螺栓固定在所述安装孔中。
附图说明
此处所说明的附图用来提供对本公开的进一步理解，构成本公 开的一部分。本公开的示意性实施例及其说明用于解释本公开，并不构成对本公开的限定。在附图中：
图1为根据本公开一些实施例的一种真空镀膜设备的示意图；
图2为根据本公开一些实施例的另一种真空镀膜设备的示意图；
图3为图1中局部A的放大图；和
图4为根据本公开一些实施例的工作腔的结构示意图。
具体实施方式
下面将详细描述本公开的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本公开，而不能解释为对本公开的限制。
本公开一些实施例提供了一种真空镀膜设备，如图1所示，包括：工作腔1，所述工作腔1配置为在其内部容纳基板4。其中，所述工作腔1内设置有：加热器5；第一温度传感器6，配置为测量所述加热器的温度；以及一个或多个第二温度传感器7，配置为测量所述工作腔1内的环境温度。
由于在腔室壁的温度发生变化、腔室维护、更换零部件、或者长时间工艺制程后，工作腔1的环境温度都会发生改变，这会导致基板所处位置的温度发生改变。针对这一问题，本公开实施例通过第一温度传感器6和第二温度传感器7的反馈，便于后续对环境温度进行修正，从而保证基板4处的温度恒定，以保证优良的工艺结果。第二温度传感器7可提供为多个。第二温度传感器7的具体设置位置可不做限定，本领域技术人员可以根据实际需要进行设置。
薄膜工艺设备对基板的加热主要通过加热器和腔室的辐射加热以及空气的传导加热。而工艺设备处于高真空状态，空气传导加热的影响很小。所以基板的温度主要源于顶部的加热器和腔室底部的辐射。第一温度传感器6测得了加热器的温度，第二温度传感器7测得了工作腔的内部空间中特定点的温度，以测量工作腔1内的环境温度， 特定点指第二温度传感器7所在位置，并且第二温度传感器7与第一温度传感器6之间距离是已知。多个第二温度传感器7的情况下，根据多个第二温度传感器7各自测量的特定点的温度，确定工作腔1内的环境温度，比如，可以通过求平均，或去掉最高和最低的温度后求平均等方式，得到工作腔1内的环境温度。
通过加热仿真或者实验测定，根据测得的加热器的温度和特定点的温度可以确定基板4处的空间温度。这样，如果腔室环境发生变化，可以通过第一温度传感器6和第二温度传感器7的反馈，对温控过程进行修正，从而保证基板4处的温度恒定，保证优良的工艺结果。
在一些实施例中，可根据所述第一温度传感器6的第一测量值和第二温度传感器7的第二测量值建立所述工作腔内的热场仿真模型，并根据所述热场仿真模型计算所述基板处的温度。因此，所述第二温度传感器7的设置位置可按照有助于更好地建立热场仿真模型的要求优化。多个第二温度传感器7的情况下，根据多个第二温度传感器7各自测得的第二测量值和第一温度传感器6的第一测量值，建立工作腔内的热场仿真模型。例如，根据多个第二温度传感器7各自测得的第二测量值，确定工作腔1内的环境温度；基于工作腔1内的环境温度和第一温度传感器6的第一测量值，建立工作腔内的热场仿真模型。
在本公开一些实施例中，第二温度传感器7设置在所述工作腔1的远离第一温度传感器6的内壁上。例如，加热器设置在所述工作腔的顶部时，第二温度传感器7设置在所述工作腔1的底部或侧壁处。
在本公开一些实施例中，如图1所示，该真空镀膜设备包括工作腔1，工作腔1的内部用于容置基板4。该工作腔1的顶部设置有开口9，上述开口9由顶盖2封堵。所述加热器5设置在所述顶盖2的邻近所述工作腔1内部的一侧上；所述第一温度传感器6设置在所述工作腔1的顶部；所述至少一个第二温度传感器7中的一个设置在所述工作腔1的底部。在本公开实施例中，设置了开口9和顶盖2，便于设置并更换加热器5。而且，安装加热器的顶盖2可以选择特殊 的耐热材料。
基板4从工作腔1的一侧进入工作腔，从工作腔1的另一侧输出。在一些实施例中，如图2所示，工作腔1包括加热腔11、工艺腔12和冷却腔13，加热腔11、工艺腔12和冷却腔13一起用于完成基板的镀膜工艺。在一些实施例中，该真空镀膜设备还包括进片腔14和出片腔15。图2中所示的箭头指基板4的行进方向。在一些实施例中，加热器5、第一温度传感器6和第二温度传感器7设置在工艺腔内。
在一些实施例中，加热器5为加热丝5。
在一些实施例中，加热丝5焊接在顶盖2上。在另一些实施例中，该加热丝5通过其他方式固定在顶盖2上。
第一温度传感器6配置为测量加热丝5的温度。在一些实施例中，该第一温度传感器6的一端部穿过顶盖2，另一端部位于加热丝5与顶盖2之间。在另一些实施例中，为了便于安装第一温度传感器6,减少安装工艺难度和安装成本，第一温度传感器6缠绕在加热丝5上。
第二温度传感器7配置为测量工作腔1内的环境温度。在一些实施例中，第二温度传感器7焊接固定在工作腔1的底部。在另一些实施例中，第二温度传感器7通过其他方式固定。在一些示例中，如图3所示，在工作腔1的底部设置有安装孔10，设置在工作腔的底部的第二温度传感器7固定在安装孔10中。例如，第二温度传感器7通过螺栓71固定在安装孔10中。
在一些实施例中，第一温度传感器6和第二温度传感器7均采用热电偶。当然，也可以采用其他装置来实现温度的采集。
在一些实施例中，如图4所示，真空镀膜设备还包括：温控器8，所述温控器8配置为接收所述第一温度传感器6的第一测量值和所述至少一个第二温度传感器7的第二测量值，并根据所述第一测量值和所述第二测量值计算所述基板4处的温度，并根据计算出的所述基板4处的温度生成用于控制所述加热器5调整加热功率的指令。
在一些实施例中，所述温控器8还配置为根据所述第一测量值和所述第二测量值以及已有的所述工作腔1内的热场仿真模型计算所述基板4处的温度，或者，根据所述第一测量值和所述第二测量值建立所述热场仿真模型，再根据所述热场仿真模型计算所述基板4处的温度。
本公开实施例提供的真空镀膜设备在运行时，第一温度传感器6感测加热丝5的温度，第二温度传感器7感测工作腔1内的环境温度。这样，当工作腔1的环境温度发生变化时，使用第一温度传感器6测量的温度T1和第二温度传感器7测量的温度T2来建立热场仿真模型，或者使用第一温度传感器6测量的温度T1和第二温度传感器7并结合预先存储的已有数据建立热场仿真模型，再根据所述热场仿真模型计算所述基板4处的温度。建立热场仿真模型时使用的已有数据可能并不是必需的，但为实现更精确的温度控制，这些已有数据可包括但不限于例如工作腔1的内部结构信息以及内部结构的辐射特性信息，还可包括前面工艺过程中测得一些温度数据。换言之，一般初次进行加热仿真实验时，需获取大量数据输入，以建立热场仿真模型对应的温度数据库。之后测得的温度，可直接从该温度数据库中调用结果即可，无需再做仿真实验。
在一些实施例中，上述热场仿真模型为工作腔1的3D热场仿真模型。3D热场仿真模型根据实际设备的机械3D图纸建立，T1和T2作为仿真模型的一组输入进行仿真计算。
在一些实施例中，所述温控器8还配置为，判断所述基板4处的温度是否处于预设的工艺温度范围内，并在判断结果为所述基板4处的温度不在所述工艺温度范围内时，生成调整所述加热器(加热丝5)的加热功率的指令，直至所述基板4处的温度处于所述工艺温度范围内。
温控器8获得基板处的温度T3后，再将该温度T3与工艺温度范围的端点值作比对，若温度T3不在工艺温度范围内，则调整加热丝的加热功率。一直重复上述的比较和调整步骤，直至基板处的温度 T3处于工艺温度范围内。这样，提高了测量温度的精准性，从而提高了工艺质量。工艺温度范围为工艺人员设定的工艺参数中的温度范围，可通过操作界面输入温控器8或与温控器8通信连接的主机。
为了尽量保证顶盖2与开口之间的密封性，在一些实施例中，真空镀膜设备还包括设置在顶盖2与开口之间的密封垫3，密封垫3配置为对顶盖2与开口之间的间隙进行密封，并对顶盖2进行固定。
在一些实施例中，如图1所示，根据工作腔1的尺寸和温度测试的需求，第一温度传感器6与工作腔1的底部具有设定距离。第一温度传感器6与工作腔1底部的距离恒定，可保证第一温度传感器6在工作腔1内形成的热场不变，即对应的温度数据库有效。若这个距离进行了调整，则需要重做温度仿真实验，重新建立数据库。
在一些实施例中，加热丝5设置为沿着基板4的走向延伸，从而更大面积地、均匀地对基板4进行加热。为了实现温度测试的均匀性，在一些实施例中，可以提供多个第二温度传感器7，多个第二温度传感器可以均匀地分布在工作腔1的底部。
以上依据图式所示的实施例详细说明了本公开实施例的构造、特征及作用效果，以上实施例仅为本公开的一些实施例，但本公开不以图面所示限定实施范围。凡是依照本公开的构想所作的改变，或修改为等同变化的等效实施例，仍未超出说明书与图示所涵盖的精神时，均应在本公开的保护范围内。

Claims (16)

  1. 一种真空镀膜设备，包括：工作腔，所述工作腔配置为在其内部容纳基板，其中，所述工作腔内设置有：
    加热器；
    第一温度传感器，配置为测量所述加热器的温度；以及
    一个或多个第二温度传感器，配置为测量所述工作腔内的环境温度。
  2. 根据权利要求1所述的真空镀膜设备，其中，
    所述加热器设置在所述工作腔的顶部；
    一个或多个所述第二温度传感器设置在所述工作腔的底部。
  3. 根据权利要求1所述的真空镀膜设备，其中，
    所述加热器设置在所述工作腔的顶部；
    一个或多个所述第二温度传感器设置在所述工作腔的侧壁。
  4. 根据权利要求1或2所述的真空镀膜设备，其中，所述工作腔的顶部设置有开口，所述真空镀膜设备还包括顶盖，所述顶盖配置为封堵所述开口；
    所述加热器设置在所述顶盖的邻近所述工作腔内部的一侧上；
    所述第一温度传感器设置在所述工作腔的顶部。
  5. 根据权利要求1-4任一项所述的真空镀膜设备，其中，所述加热器为加热丝。
  6. 根据权利要求1-5任一项所述的真空镀膜设备，其中，还包括：温控器，所述温控器配置为接收所述第一温度传感器的第一测量值和所述第二温度传感器的第二测量值，并根据所述第一测量值和所述第二测量值计算所述基板处的温度，并根据计算出的所述基板处的温度生成用于控制所述加热器调整加热功率的指令。
  7. 根据权利要求6所述的真空镀膜设备，其中，所述温控器还配置为根据所述第一测量值和所述第二测量值以及已有的所述工作腔内的热场仿真模型计算所述基板处的温度，或者，
    根据所述第一测量值和所述第二测量值建立所述热场仿真模型， 再根据所述热场仿真模型计算所述基板处的温度。
  8. 根据权利要求6或7所述的真空镀膜设备，其中，所述温控器还配置为，判断所述基板处的温度是否处于预设的工艺温度范围内，并在判断结果为所述基板处的温度不在所述工艺温度范围内时，生成调整所述加热器的加热功率的指令，直至所述基板处的温度处于所述工艺温度范围内。
  9. 根据权利要求5所述的真空镀膜设备，其中，所述第一温度传感器和/或所述第二温度传感器为热电偶。
  10. 根据权利要求5所述的真空镀膜设备，其中，所述真空镀膜设备还包括配置为对所述顶盖与所述开口之间的间隙进行密封并固定所述顶盖的密封垫。
  11. 根据权利要求5所述的真空镀膜设备，其中，所述第一温度传感器与所述工作腔的底部之间具有设定距离。
  12. 根据权利要求5所述的真空镀膜设备，其中，所述加热丝焊接在所述顶盖上。
  13. 根据权利要求2所述的真空镀膜设备，其中，所述第二温度传感器焊接到所述工作腔的底部。
  14. 根据权利要求5所述的真空镀膜设备，其中，所述第一温度传感器缠绕固定在所述加热器上。
  15. 根据权利要求1或2所述的真空镀膜设备，其中，所述工作腔的底部设置有安装孔，设置在所述工作腔的底部的所述第二温度传感器固定在所述安装孔中。
  16. 根据权利要求15所述的真空镀膜设备，其中，所述第二温度传感器通过螺栓固定在所述安装孔中。
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