WO2019074060A1 - Matériau composite - Google Patents

Matériau composite Download PDF

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Publication number
WO2019074060A1
WO2019074060A1 PCT/JP2018/037927 JP2018037927W WO2019074060A1 WO 2019074060 A1 WO2019074060 A1 WO 2019074060A1 JP 2018037927 W JP2018037927 W JP 2018037927W WO 2019074060 A1 WO2019074060 A1 WO 2019074060A1
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WO
WIPO (PCT)
Prior art keywords
anisotropic conductive
groove
conductive member
composite material
conductive film
Prior art date
Application number
PCT/JP2018/037927
Other languages
English (en)
Japanese (ja)
Inventor
浩行 小林
Original Assignee
富士フイルム株式会社
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Filing date
Publication date
Application filed by 富士フイルム株式会社 filed Critical 富士フイルム株式会社
Priority to JP2019548237A priority Critical patent/JPWO2019074060A1/ja
Publication of WO2019074060A1 publication Critical patent/WO2019074060A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Definitions

  • the present invention relates to a composite material having an anisotropic conductive member in which conductive particles are dispersed in a curable resin layer, and in particular, a composite material in which an anisotropic conductive member is provided in a groove provided in a substrate. About.
  • the anisotropic conductive member is inserted between, for example, an electronic component such as a semiconductor element and the circuit board, and an electrical connection between the electronic component and the circuit board can be obtained simply by applying pressure, and the wiring layer and the wiring layer And electrical connection between wiring layers can be obtained by simply inserting and pressing between them, so it is widely used as an electrical connection member for electronic components such as semiconductor elements, and as a test connector etc. when performing functional tests. ing. In particular, downsizing of electronic components such as semiconductor elements is remarkable. In the conventional method of directly connecting wiring boards such as wire bonding, flip chip bonding, and thermocompression bonding, etc., the stability of the electrical connection of the electronic component can not be sufficiently ensured. Anisotropic conductive members have attracted attention.
  • an anisotropic conductive film containing conductive particles has been proposed.
  • the anisotropic conductive film is made, for example, by the cutting method described in Patent Document 1.
  • Patent Document 1 a film material provided with an adhesive material layer that is continuously drawn out is heated by blowing warm air from a warm air blower installed so that the blowout port is positioned immediately below the cutting blade unit.
  • a cutting method is described in which at least the contact interface of the adhesive layer with the substrate is softened.
  • anisotropic conductive films are widely used for mounting electronic components such as semiconductor devices.
  • semiconductor elements tend to be further miniaturized, and anisotropic conductive films are attached to the semiconductor elements, and the width of the anisotropic conductive film is narrowed when mounting, etc. You need to reduce the size.
  • the width between the blade and the blade becomes the width of the anisotropic conductive film, and there is a limit in narrowing the width of the anisotropic conductive film itself. For this reason, if the miniaturization of the semiconductor device progresses further, the width of the anisotropic conductive film does not become sufficiently narrow, which may make it difficult to mount the semiconductor device.
  • An object of the present invention is to solve the above-mentioned problems based on the prior art and to provide a composite material having an anisotropic conductive member that can be used for bonding even when the semiconductor element etc. is miniaturized.
  • the present invention has a substrate having a groove, and an anisotropic conductive member provided in the groove and releasable from the groove, and the anisotropic conductive member is conductive.
  • a composite material having a curable resin layer containing particles is provided.
  • a release layer is provided between the inner surface of the groove and the anisotropic conductive member.
  • the groove is preferably wider at the opening than at the bottom. It is preferable that a plurality of grooves be provided. Assuming that the depth of the groove is Dp and the average particle diameter of the conductive particles is A, it is preferable that A ⁇ Dp ⁇ 1.2A.
  • the conductive particle is a plate-like conductive particle, and the average particle diameter of the particle diameter of the plate-like conductive particle represented by the diameter of the circumscribed circle of the plate-like conductive particle is B, and the depth of the groove is When Dp, 1.1 B ⁇ Dp ⁇ 1.4 B is preferable.
  • the width of the groove is preferably 2 mm or less.
  • FIG. 1 is a schematic perspective view showing a composite material of Example 1.
  • FIG. 1 is a schematic cross-sectional view showing a first example of a composite material according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view showing a second example of the composite material according to the embodiment of the present invention
  • It is a typical sectional view showing the 3rd example of a composite material of an embodiment of the present invention.
  • a composite 70 shown in FIG. 1 has a base material 72 having a groove 74 and an anisotropic conductive member 11 provided in the groove 74 and peelable from the groove 74.
  • the anisotropic conductive member 11 has a curable resin layer containing conductive particles, and the conductive particles are dispersed in the curable resin layer. If the anisotropic conductive member 11 is a curable resin layer containing conductive particles, the configuration thereof is not particularly limited to the configuration specifically shown below.
  • the anisotropic conductive member 11 is used by being peeled off from the base material 72, and the one in a state of peeling from the base member 72 is referred to as an anisotropic conductive film 10 (see FIGS. 4 and 5).
  • the anisotropic conductive member 11 and the anisotropic conductive film 10 have anisotropic conductivity by the conductive particles.
  • the base 72 is provided with a groove 74 opened on the surface 72 a side.
  • the cross-sectional shape of the groove 74 is, for example, rectangular, and the opening 74 a and the bottom 74 b have the same length in the direction W. That is, the width Wg of the opening 74a and the width Wb of the bottom 74b are the same.
  • the width of the groove 74 is the width Wg of the opening 74a.
  • the width Wg of the opening 74a is, for example, 2 mm or less, preferably 1.5 mm or less, and more preferably 0.8 mm or less.
  • the anisotropic conductive member 11 and the anisotropic conductive film 10 having a narrow width can be obtained.
  • the lower limit of the width Wg of the opening 74 a is not particularly limited, and may be in the order of ⁇ m.
  • a peeling layer 76 is provided on the surface 72 a on the opening 74 a side of the base material 72.
  • the anisotropic conductive member 11 is peeled from the groove 74, and the anisotropic conductive member 11 is used as the anisotropic conductive film 10.
  • the peeling layer 76 may not be provided, it is preferable that the peeling layer 76 be provided in order to facilitate the handling such as conveyance of the composite material 70.
  • the release layer 76 is not particularly limited as long as the release layer 76 can be removed from the substrate 72.
  • the release layer 76 for example, a film to which a silicone adhesive or a non-silicone adhesive is applied to a substrate to which a release function is added is used.
  • the substrate for example, polyethylene terephthalate (PET), polyester, polypropylene, and polyethylene can be used.
  • the base material 72 is preferably transparent in order to facilitate alignment when the anisotropic conductive member 11 is attached.
  • transparent means that the light transmittance is at least 60% or more, preferably 75% or more, more preferably 80% or more, and even more preferably in the visible light wavelength range of 400 to 800 nm. Is over 85%.
  • the light transmittance is measured using “plastics—how to determine total light transmittance and total light reflectance” defined in JIS (Japanese Industrial Standard) K 7375: 2008.
  • permeability of an ultraviolet light is 60% or more.
  • a release layer (not shown) may be provided between the inner surface 74 c of the groove 74 and the anisotropic conductive member 11.
  • the release layer is for making it easy to peel off the anisotropic conductive member 11 from the base material 72.
  • the release layer may be configured such that the peeling force differs depending on the location of the inner surface 74c of the groove 74, and can be realized, for example, by changing the type of release agent between the wall surface and the bottom surface of the inner surface 74c of the groove 74.
  • the composite 70 shown in FIG. 1 is configured to have one groove 74
  • the present invention is not limited to this, and a plurality of grooves 74 may be configured.
  • the composite 70 shown in FIG. 2 has four grooves 74.
  • a composite 70 having a plurality of grooves 74 for example, a plurality of grooves 74 are used.
  • cut line C L shown in FIG. 2 it can be used in a form individual pieces by cutting the substrate 72.
  • the cut line C L is not limited to be provided in every one groove 74 may be provided with a cut line C L to include a plurality of grooves 74.
  • the composite material 70 having a plurality of grooves 74 shown in FIG. 2 the material may be cut in a state in which the release layer 76 is provided when cutting at the above-mentioned cut line CL , and the above-described The release layer 76 may be provided after cutting along the cut line CL and cutting.
  • the shape of the groove 74 is not limited to the same length in the direction W of the opening 74a and the bottom 74b as shown in FIG. 1, but as shown in FIG. 3, the direction of the opening 74a May be longer in the direction W than the bottom 74 b. That is, the width Wg of the opening 74a> the width Wb of the bottom 74b.
  • the shape of the groove 74 is, for example, trapezoidal.
  • the shape is not limited to a trapezoid, and a portion corresponding to the oblique side of the trapezoid may be a curved line.
  • the shape of the groove 74 shown in FIGS. 1 to 3 is obtained by acquiring a cross-sectional image of the extending direction of the groove 74 using an optical microscope, and using the cross-sectional image, the depth Dp of the groove 74 and the width Wg of the opening 74a. , And various widths of the width Wb of the bottom 74b can be specified.
  • the depth Dp of the groove 74 is determined by the specifications and the like of the anisotropic conductive film 10 to be finally obtained.
  • the groove depth Dp is, for example, A ⁇ Dp ⁇ 1.2 A, where A is the average particle diameter of the conductive particles.
  • the conductive particle is a plate-like conductive particle, and the average particle diameter of the plate-like conductive particle represented by the diameter of the circumscribed circle of the plate-like conductive particle When the particle diameter is B, then 1.1B ⁇ Dp ⁇ 1.4B.
  • FIG. 4 is typical sectional drawing which shows the 1st example of the anisotropic conductive film comprised with the anisotropic conductive member of the composite material of embodiment of this invention.
  • peeling layers 15 are provided on both sides of the anisotropic conductive member 11. The anisotropic conductive film 10 is used by peeling the peeling layer 15.
  • the release layer 15 is, for example, a PET (polyethylene terephthalate) film to which a silicone is applied to give a release function, but the same configuration as the above-described release layer 76 can be used.
  • the anisotropic conductive film 10 has a curable resin layer 14 containing conductive particles 12.
  • the anisotropic conductive film 10 has conductivity in the thickness direction D by the conductive particles 12.
  • the anisotropic conductive film 10 exhibits anisotropic conductivity.
  • the thickness T of the curable resin layer 14 of the anisotropic conductive film 10 corresponds to the depth Dp (see FIG. 1) of the groove 74 (see FIG. 1) of the composite material 70 (see FIG. 1).
  • a ⁇ T ⁇ 1.2 A it is preferable that A ⁇ 10 ⁇ m.
  • the average particle diameter A exceeds 10 ⁇ m
  • the conductive particles 12 become relatively larger than the line width of the line and space, making it difficult to secure the conductivity. Become. Therefore, it is preferable that A ⁇ 10 ⁇ m.
  • the content of the conductive particles 12 is preferably 3 to 10% by volume.
  • the contact area of the curable resin layer 14 and a to-be-connected object can be ensured, and adhesiveness can be maintained.
  • the upper limit value of the interval G of the conductive particles 12 is determined, for example, from the viewpoint of conductivity, and is determined by the lower limit value of the content of the conductive particles 12.
  • FIG. 5 is a schematic cross-sectional view showing a second example of the anisotropic conductive film composed of the composite anisotropic conductive member of the embodiment of the present invention
  • FIG. 6 is a composite of the embodiment of the present invention It is a schematic perspective view which shows the electroconductive particle of the 2nd example of the anisotropic conductive film comprised with the anisotropic conductive member of material.
  • a peeling layer 15 is provided on the surface 14 a and the back surface 14 b of the curable resin layer 14 of the anisotropic conductive member 11, respectively.
  • the anisotropic conductive film 10 has a curable resin layer 14 containing conductive particles 13.
  • the anisotropic conductive film 10 has conductivity in the thickness direction D by the plate-like conductive particles 13.
  • the anisotropic conductive film 10 exhibits anisotropic conductivity.
  • Plate-shaped conductive particles 13, for example, the surface 13a is oriented in parallel to the plane P L that is perpendicular to the surface 14a of the cured resin layer 14.
  • the surface P L shown in FIG. 5 and FIG. 6 shows one of the plane perpendicular to the surface 14a, but is not limited to the plane P L.
  • the direction of the plate-like conductive particles 13 is not particularly limited.
  • the direction of the surface 13 a of the plate-like conductive particles 13 may be uniform or not random in all plate-like conductive particles 13, but the filling factor of the plate-like conductive particles 13 may be Of the conductive particles 13 in the plate-like conductive particles 13 from the viewpoint of the stability of the conduction and the contact area between the curable resin layer 14 and the connection target can be secured. Is preferred.
  • the thickness T of the curable resin layer 14 corresponds to the depth Dp (see FIG. 1) of the groove 74 (see FIG. 1).
  • the flow of the curable resin layer 14 can be minimized, and the orientation of the plate-like conductive particles 13 at the time of pressure bonding is maintained. That is, the plate-like conductive particles 13 can be prevented from falling.
  • the plate-like conductive particles 13 are prevented from falling down because the plate-like conductive particles 13 are oriented in parallel as described above. Thereby, the anisotropic conductive film 10 maintains the orientation of the plate-like conductive particles 13 even after pressure bonding. Due to this, excellent conductivity and excellent adhesion can be obtained.
  • the plate-like conductive particles 13 incline obliquely and lack conduction stability. Furthermore, since the space between the tip of the plate-like conductive particle and the electrode can not be completely filled with the curable resin layer 14, the adhesion is lowered.
  • the thickness T of the curable resin layer is T> 1.4 B, at the time of pressure bonding, the plate-like conductive particles 13 fall down to cause conduction failure.
  • the average particle diameter B is preferably less than 10 ⁇ m.
  • the average particle diameter B exceeds 10 ⁇ m, the plate-like conductive particles 13 become large, and when the line and space is as small as several ⁇ m, the plate-like conductive particles 13 are relative to the line width of the line and space And it becomes difficult to secure conductivity.
  • the width of the line is 5 ⁇ m, the average particle diameter B is about 1.3 ⁇ m.
  • the content of the plate-like conductive particles 13 is preferably 2 to 6% by volume.
  • the surface 13a of the plate-shaped conductive particles 13 are oriented parallel to the plane P L that is perpendicular to the surface 14a of the cured resin layer 14. That the plate-like conductive particles 13 are oriented in parallel means that 80% or more of the total number of plate-like conductive particles 13 are oriented in parallel as the ratio of the plate-like conductive particles 13 It says that it is in the state.
  • a line parallel to the thickness direction D of the curable resin layer 14 which passes through the normal line N of the arbitrary point C of the surface 13 a of the plate-like conductive particle 13 and the arbitrary point C.
  • ⁇ be the angle ⁇ with L.
  • Orientation in parallel means that the angle ⁇ of the angle ⁇ shown in FIG.
  • the angle ⁇ is preferably 75 ° ⁇ ⁇ ⁇ 105 °, and more preferably 85 ° ⁇ ⁇ ⁇ 95 °.
  • the area on the surface 14 a of the curable resin layer 14 can be made smaller than that of the spherical conductive particles. Thereby, the contact area with the connection target can be increased while maintaining the conductivity, and the adhesion can be maintained.
  • FIG. 9 to FIG. 11 are schematic views showing, in the order of steps, bonding examples using the composite material of the embodiment of the present invention.
  • a first wiring board 20 is prepared.
  • the first wiring board 20 is one in which, for example, three electrodes 22 are provided on the base 21.
  • the composite material 70 is disposed with the electrode 22 and the anisotropic conductive member 11 opposed to the first wiring substrate 20.
  • the base 72 of the composite 70 is transparent, the transmitted light is used to align the anisotropic conductive member 11 with the electrode 22.
  • the alignment mark is provided on the base material 72, alignment of the anisotropic conductive member 11 with the electrode 22 is performed using the alignment mark.
  • the anisotropic conductive member 11 is brought into contact with the three electrodes 22 and temporarily crimped. After temporary pressure bonding, the base material 72 is peeled off. As a result, as shown in FIG. 11, the anisotropic conductive film 10 composed of the anisotropic conductive member 11 is placed on the three electrodes 22.
  • the temporary pressure bonding is performed using heat or ultraviolet light depending on the composition of the curable resin layer. In addition, when using an ultraviolet light for temporary pressure bonding, it is preferable that the base material 72 is 60% or more of the transmittance
  • the substrate 72 is anisotropic
  • the conductive member 11 can be easily peeled off.
  • the shape of the groove is wider on the side of the opening 74a than on the bottom 74b as shown in FIG. 3, the electrode 22 is in contact with the wide side of the anisotropic conductive member 11 and is temporarily crimped. Therefore, when the base material 72 is peeled off, the width Wg of the opening 74a shown in FIG. 1 and the width Wb of the bottom 74b are easily peeled off from the anisotropic conductive member 11 as compared to the same groove 74. Can.
  • the second wiring board 24 has the same configuration as the first wiring board 20, and the base 25 is provided with three electrodes 26.
  • the electrode 26 of the second wiring substrate 24 and the electrode 22 of the first wiring substrate 20 are disposed opposite to each other with the anisotropic conductive film 10 interposed therebetween.
  • the first wiring board 20 and the second wiring board 24 are pressurized to perform main pressure bonding.
  • the electrode 22 and the electrode 26 are bonded by the curable resin layer 14 by the heating and pressure of the main pressure bonding, and the electrode 22 and the electrode 26 are physically connected.
  • the first wiring substrate 20 and the second wiring substrate 24 are bonded by the anisotropic conductive film 10.
  • the first wiring substrate 20 and the second wiring substrate 24 can be joined using the composite material 70.
  • one of the first wiring board 20 and the second wiring board 24 may be an IC (Integrated Circuit) chip.
  • the width of the electrode 22 and the electrode 26 is We, and the distance between the electrodes 22 and the distance between the electrodes 26 is Wm.
  • the width We of the electrodes 22 and 26 and the distance Wm between the electrodes 22 and 26 are also referred to as line and space, and each of them is desired to be narrow, preferably less than 10 ⁇ m, more preferably less than 5 ⁇ m, More preferably, it is less than 1 ⁇ m.
  • the width Wg of the groove 74 can be adjusted to adjust the width of the anisotropic conductive film 10, and the depth Dp of the groove 74 is adjusted to adjust the thickness of the anisotropic conductive film 10 be able to.
  • the narrow anisotropic conductive film 10 having a width of 2 mm or less can be obtained. Therefore, by using the composite material 70 (see FIGS. 1 to 3), even when the width We of the electrodes 22 and 26 and the distance Wm between the electrodes 22 and 26 are as narrow as less than 10 ⁇ m, the connection target is joined can do.
  • Each of the first wiring board 20 and the second wiring board 24 is one in which the electrodes 22 and 26 constituting the wiring are formed on the base materials 21 and 25.
  • the base materials 21 and 25 ones suitable for the purpose are appropriately used, and for example, a glass substrate, a polyethylene terephthalate (PET) substrate, a cycloolefin polymer (COP) substrate and the like are used.
  • the electrodes 22 and 26 are metal electrodes, such as Au (gold), Ag (silver), Cu (copper), Al (aluminum), their alloys, or ITO (Indium Tin Oxide) according to the purpose. Composed of The electrode height of the electrodes 22 and 26 can be adjusted by the plating time and the type of plating solution when the electrodes are formed by plating. Moreover, when an electrode is formed with metal foil, it can adjust by changing the thickness of metal foil.
  • FIGS. 13 to 15 are schematic perspective views showing the method of manufacturing a composite material according to the embodiment of the present invention in the order of steps.
  • the same components as those of the composite 70 shown in FIG. 1 are designated by the same reference numerals, and the detailed description thereof is omitted.
  • a base material 72 having a groove 74 is prepared.
  • a solution for forming the anisotropic conductive member 11 is prepared.
  • the solution for forming the anisotropic conductive member 11 is a mixture of conductive particles and a curable resin constituting the curable resin layer. The conductive particles and the curable resin layer will be described in detail later.
  • the above-mentioned solution is applied to the surface 72 a of the base material 72 to form a liquid film 73 as shown in FIG.
  • the liquid film 73 is scraped off using a squeegee to fill the groove 74 with the solution.
  • the solution is dried using, for example, an oven or the like.
  • the composite material 70 in which the anisotropic conductive member 11 is provided in the groove 74 shown in FIG. 1 can be obtained.
  • the anisotropic conductive member 11 contains the above-mentioned plate-shaped conductive particle, for example, a conductive particle having a magnetization easy axis is used.
  • a magnetic field is applied to orient the conductive particles.
  • the direction of the magnetic field is appropriately determined based on the direction of the magnetization easy axis of the conductive particles.
  • the magnetic field is applied, for example, using a coil, but the method of applying the magnetic field is not limited to using a coil.
  • the method of filling the groove 74 with the solution is the formation of the liquid film 73 as shown in FIG. 14 and scraped off, but the method is not limited to this, and the solution only in the groove 74 using the inkjet method May be filled.
  • the scraping of the liquid film 73 is also not limited to the squeegee.
  • the solution may be filled in the groove 74.
  • the method of forming the liquid film 73 is also not particularly limited, and examples thereof include spin coating, gravure coating, reverse coating, die coating, blade coating, roll coating, air knife coating, screen coating, Conventionally known coating methods such as a bar coating method and a curtain coating method can be used. Alternatively, an inkjet method or the like can be used.
  • the present invention is not limited to this. Even if the base material 72 having the plurality of grooves 74 shown in FIG. 2 is used, the composite material 70 provided with the anisotropic conductive member 11 can be obtained by the steps shown in FIGS. 13 to 15 described above.
  • the anisotropic conductive member 11 can be formed using a roll-to-roll method. In the roll-to-roll method, if the direction of the magnetization easy axis is previously adjusted in the direction orthogonal to the transport direction, the conductive particles are oriented by applying a magnetic field in the direction orthogonal to the transport direction. Can. This can increase the production efficiency.
  • FIG. 16 is a schematic view showing a first example of a method for producing a substrate having a groove of a composite material according to an embodiment of the present invention.
  • FIG. 17 and FIG. 18 are schematic views showing, in the order of steps, a second example of a method of manufacturing a base having a groove of a composite material according to an embodiment of the present invention.
  • the groove formation method shown in FIGS. 17 and 18 is a method using a photolithography method.
  • FIGS. 19 to 21 are schematic views showing, in the order of steps, a third example of the method for producing a substrate having a groove of a composite material according to an embodiment of the present invention.
  • the groove forming method shown in FIGS. 19 to 21 is a method called in-mold molding.
  • the groove 74 (see FIG. 21) of the substrate 72 irradiates the area 75 to be the groove 74 (see FIG. 21) in the surface 72a of the substrate 72 with the groove
  • the laser beam Lv is formed by scanning in the direction in which the laser beam 74 extends.
  • the light quantity of the laser beam Lv and the scanning speed of the laser beam Lv are obtained in advance according to the shape and size of the groove 74 to be formed.
  • the laser light Lv is irradiated using a CO 2 gas laser or a solid UV (Ultra Violet) laser.
  • a resist film 77 is formed on the surface 72 a of the base material 72. Then, patterning is performed on the resist film 77 using a photolithography method to form an opening 78 corresponding to the region 75 to be the groove 74 in the surface 72 a of the base material 72 in the resist film 77. Next, using the resist film 77 as a mask, for example, dry etching or wet etching is used to form a groove 74 (see FIG. 21).
  • a mold 80 is prepared.
  • the mold 80 is provided with a projection 82 for forming a groove 74 (see FIG. 21).
  • the protrusions 82 of the mold 80 are disposed on the surface 72 a of the base 72 so as to face the regions 75 to be the grooves 74 (see FIG. 21).
  • the mold 80 is pressed against the surface 72 a of the substrate 72.
  • the substrate 72 is maintained at a temperature equal to or higher than the glass transition temperature (Tg).
  • Tg glass transition temperature
  • variety of the anisotropic conductive member 11 and the anisotropic conductive film 10 can be adjusted by changing the width
  • the thickness of the anisotropic conductive member 11 and the anisotropic conductive film 10 can be adjusted by changing the groove depth Dp (see FIG. 1) of the substrate.
  • the laminate can be formed using the anisotropic conductive member 11 of the composite material 70, that is, the anisotropic conductive film 10.
  • the laminate includes an anisotropic conductive film formed of an anisotropic conductive member, and a member having an electrode or a wire, and the electrode or the wire of the member is electrically connected to the anisotropic conductive film. ing.
  • the laminate is, for example, one complete and exhibits a specific function alone.
  • the members having electrodes or wirings are, for example, semiconductor elements and wiring boards.
  • FIG. 22 is a schematic cross-sectional view showing an example of the configuration of the terminal of the semiconductor element
  • FIG. 23 is a schematic cross-sectional view showing another example of the configuration of the terminal of the semiconductor element.
  • the semiconductor elements 42 and 44 have a semiconductor layer 32, a rewiring layer 34, and a passivation layer 36.
  • the redistribution layer 34 and the passivation layer 36 are insulating layers electrically insulated.
  • the surface 32 a of the semiconductor layer 32 is provided with an element region (not shown) in which a circuit or the like exhibiting a specific function is formed. The element region will be described later.
  • the surface 32 a of the semiconductor layer 32 corresponds to, for example, a surface provided with a semiconductor terminal.
  • a redistribution layer 34 is provided on the surface 32 a of the semiconductor layer 32.
  • a wire 37 electrically connected to the element region of the semiconductor layer 32 is provided in the rewiring layer 34.
  • the pad 38 is provided on the wiring 37, and the wiring 37 and the pad 38 are electrically connected.
  • the wiring 37 and the pad 38 enable transmission and reception of signals with the element region, and can supply a voltage or the like to the element region.
  • a passivation layer 36 is provided on the surface 34 a of the redistribution layer 34.
  • a terminal 30a is provided on the pad 38 provided on the wiring 37.
  • the terminal 30 a is electrically connected to the semiconductor layer 32.
  • the wiring 37 is not provided in the rewiring layer 34, only the pad 38 is provided.
  • the terminal 30 b is provided on the pad 38 which is not provided on the wiring 37.
  • the terminal 30 b is not electrically connected to the semiconductor layer 32.
  • the anisotropic conductive film 10 is provided on the terminals 30a and 30b to be electrically connected to other members.
  • the end face 30c of the terminal 30a and the end face 30c of the terminal 30b both coincide with the surface 36a of the passivation layer 36 and are so-called flush state, and the terminals 30a and 30b protrude from the surface 36a of the passivation layer 36 Absent.
  • the terminal 30a and the terminal 30b shown in FIG. 22 are made flush with the surface 36a of the passivation layer 36, for example, by polishing.
  • the terminal 30a and the terminal 30b are not limited to being flush with the surface 36a of the passivation layer 36, and may protrude with respect to the surface 36a of the passivation layer 36 as shown in FIG.
  • the amount ⁇ of protrusion of the terminals 30 a and 30 b with respect to the surface 36 a of the passivation layer 36 is preferably 1/3 or less of the thickness of the anisotropic conductive film 10.
  • the amount of protrusion ⁇ is not limited to the terminal, and the same applies to electrodes and wires connected by the anisotropic conductive film 10.
  • the amount of protrusion ⁇ is 1/3 or less of the thickness of the anisotropic conductive film 10, it is stably connected to the anisotropic conductive film 10 without cracking or adhesion failure. If the protrusion amount ⁇ exceeds 1/3 of the thickness of the anisotropic conductive film 10, cracking, adhesion failure, or the like may occur, and the connection stability with the anisotropic conductive film 10 may be impaired. Moreover, when connecting with two electrodes by the anisotropic conductive film 10, in order to make protrusion amount (delta) 1/3 or less of the thickness of the anisotropic conductive film 10, at least one electrode should just be sufficient.
  • the thickness of the anisotropic conductive film 10 is the thickness T of the above-mentioned curable resin layer.
  • the thickness of the anisotropic conductive film 10 may be, for example, not more than 1/4 of the width W L of the terminal 30 a and the width W L of the terminal 30 b.
  • the protrusion amount ⁇ described above acquires an image of a cross section including the terminal 30a and the terminal 30b in the semiconductor elements 42 and 44, acquires the contour of the terminal 30a and the contour of the terminal 30b by image analysis, and the end surface 30c of the terminal 30a
  • the end face 30c of the terminal 30b is detected.
  • the distance between the surface 36a of the passivation layer 36 and the end face 30c of the terminal 30a and the distance between the end face of the terminal 30b and the end 30c can be obtained.
  • the end surface 30c of the terminal 30a and the end surface 30c of the terminal 30b are both surfaces farthest from the surface 36a of the passivation layer 36, and are generally called a top surface.
  • the semiconductor layer 32 is not particularly limited as long as it is a semiconductor, and is made of silicon or the like, but is not limited thereto, and may be silicon carbide, germanium, gallium arsenide, gallium nitride or the like. Good.
  • the redistribution layer 34 is made of an electrically insulating material, such as polyimide.
  • the passivation layer 36 is also made of an electrically insulating material, such as silicon nitride (SiN) or polyimide.
  • the wires 37 and the pads 38 are made of a conductive material, such as copper, copper alloy, aluminum, or aluminum alloy.
  • the terminal 30 a and the terminal 30 b are configured to be conductive similarly to the wiring 37 and the pad 38, and are configured by, for example, a metal or an alloy.
  • the terminals 30a and 30b are made of, for example, copper, a copper alloy, aluminum, or an aluminum alloy.
  • the terminals 30a and the terminals 30b may be of any type as long as they have conductivity, and are not limited to being made of metal or alloy, and are used for what are called terminals, electrodes or electrode pads in the semiconductor device field. The materials to be used can be suitably used.
  • the interval W S spacing W S and terminal 30b of the terminal 30a is desired to narrow, and the width W L of the terminal 30a the interval W S spacing W S and terminal 30b of width W L and the terminal 30a of the terminal 30b, is preferably less than 10 ⁇ m, respectively, and more preferably less than 5 [mu] m, more preferably less than 1 [mu] m. Even in this case, by using the anisotropic conductive film 10, excellent conductivity and adhesiveness can be obtained.
  • the semiconductor element 42 and the semiconductor element 44 are joined in the lamination direction Ds via the anisotropic conductive film 10 exhibiting anisotropic conductivity, and the semiconductor element 42 and the semiconductor The element 44 may be electrically connected.
  • the conductivity and the adhesion between the semiconductor element 42 and the semiconductor element 44 are excellent.
  • the semiconductor elements 42 and 44 have a plurality of terminals 45, for example, as shown in FIG.
  • the semiconductor element 42 and the semiconductor element 44 can be electrically used by using the above-described anisotropic conductive film 10 It can be connected.
  • the semiconductor element 42, the semiconductor element 44, and the semiconductor element 46 are stacked and joined in the stacking direction Ds via the anisotropic conductive film 10 and electrically connected to each other. It is also good.
  • the conductivity and adhesion between the semiconductor element 42, the semiconductor element 44, and the semiconductor element 46 are excellent.
  • it may function as an optical sensor like the laminated body 40 shown in FIG.
  • the semiconductor element 52 and the sensor chip 54 are laminated in the lamination direction Ds via the anisotropic conductive film 10. Further, the sensor chip 54 is provided with a lens 56. In the laminate 40 shown in FIG. 27, the conductivity and adhesion between the semiconductor element 52 and the sensor chip 54 are excellent.
  • the semiconductor element 52 has a logic circuit formed therein, and the configuration thereof is not particularly limited as long as the signal obtained by the sensor chip 54 can be processed.
  • the sensor chip 54 includes an optical sensor that detects light.
  • the light sensor is not particularly limited as long as it can detect light, and for example, a charge coupled device (CCD) image sensor or a complementary metal oxide semiconductor (CMOS) image sensor is used.
  • CCD charge coupled device
  • CMOS complementary metal oxide semiconductor
  • the semiconductor element 52 and the sensor chip 54 are connected via the anisotropic conductive film 10, but the present invention is not limited to this.
  • the semiconductor element 52 and the sensor chip 54 May be directly joined.
  • the configuration of the lens 56 is not particularly limited as long as it can condense light on the sensor chip 54. For example, a lens called a microlens is used.
  • the above-described semiconductor element 42, the semiconductor element 44, and the semiconductor element 46 have, for example, the above-described semiconductor layer 32, and have an element region (not shown).
  • the element region is a region in which various element configuration circuits such as a capacitor, a resistor, and a coil are formed to function as an electronic element.
  • a memory circuit such as a flash memory
  • a region where a logic circuit such as a microprocessor and a field-programmable gate array (FPGA) is formed a communication module such as a wireless tag, Area.
  • a transmitter circuit or MEMS may be formed.
  • the MEMS is, for example, a sensor, an actuator, an antenna or the like.
  • the sensors include, for example, various sensors such as acceleration, sound and light.
  • an element configuration circuit and the like are formed, and in the semiconductor element, the rewiring layer 34 (see FIG. 22) is provided as described above.
  • the stacked body for example, a combination of a semiconductor element having a logic circuit and a semiconductor element having a memory circuit can be employed. Further, all the semiconductor elements may have memory circuits, or all the semiconductor elements may have logic circuits.
  • the combination of semiconductor elements in the stack 40 may be a combination of a sensor, an actuator, an antenna, and the like, and a memory circuit and a logic circuit, and is appropriately determined in accordance with the application of the stack 40 and the like.
  • the semiconductor element is not particularly limited, and specific examples thereof include the following.
  • Examples of the semiconductor element include logic integrated circuits such as application specific integrated circuits (ASICs), field programmable gate arrays (FPGAs), and application specific standard products (ASSPs), as well as those described above.
  • microprocessors such as CPU (Central Processing Unit) and GPU (Graphics Processing Unit), are mentioned, for example.
  • DRAM dynamic random access memory
  • HMC hybrid memory cube
  • MRAM magnetoresistive random access memory
  • PCM phase-change memory
  • ReRAM resistance random access memory
  • FeRAM ferroelectric random access memory
  • Flash memory Flash memory and the like.
  • analog integrated circuits such as light emitting diodes (LEDs), power devices, direct current (DC) -direct current (DC) converters, and insulated gate bipolar transistors (IGBTs) can be cited.
  • a semiconductor element for example, GPS (Global Positioning System), FM (Frequency Modulation), NFC (Near Field Communication), RFEM (RF Expansion Module), MMIC (Monolithic Microwave Integrated Circuit), WLAN (Wireless Local Area Network) Etc., discrete elements, passive devices, surface acoustic wave (SAW) filters, radio frequency (RF) filters, integrated passive devices (IPD), and the like.
  • the semiconductor element may be a TEG (Test Element Group) chip.
  • interposers tape automated bonding (TAB) tapes, and test element group (TEG) chips can also be connected. Furthermore, it can be used for connection with the electrode pad of a transparent conductive film, and the electrode pad of FPC (Flexible Printed Circuits) as a to-be-connected object.
  • the present invention can also be used to connect and mount an IC (Integrated Circuit) chip directly on an electrode pad of a transparent conductive film.
  • the transparent conductive film is not particularly limited as long as it has low visibility and is hard to be recognized.
  • a conductive film in which a substance such as ITO itself is transparent may be used. It may be a conductive film made of a metal wire.
  • the various conductive films used for a touch sensor etc. can be utilized suitably, for example.
  • the IC chip has a plurality of terminals 45, as shown in FIG. 25, for example, similarly to the semiconductor elements 42 and 44.
  • a first example of a method of manufacturing a laminate using an anisotropic conductive member of composite material relates to a chip-on-wafer, and shows a method of manufacturing a laminate 40 shown in FIG.
  • FIG. 28 to FIG. 30 are schematic views showing, in the order of steps, a first example of a method of manufacturing a laminate using the anisotropic conductive member of a composite material according to the embodiment of the present invention.
  • a semiconductor element 44 in which the anisotropic conductive film 10 is provided on the surface 44 a is prepared.
  • the anisotropic conductive film 10 is provided on the surface 44 a of the semiconductor element 44 by the bonding method of the anisotropic conductive member 11 of the composite material 70 described above.
  • the width and the like of the anisotropic conductive member 11 can be adjusted as described above, so the anisotropic conductive member 11, that is, the anisotropic conductive film 10 is a surface of the semiconductor element 44. It can be implemented without protruding from 44a.
  • the anisotropic conductive film 10 can be used for bonding even if the semiconductor element 44 or the like is miniaturized, and can be used for mounting.
  • the semiconductor element 44 is disposed with the anisotropic conductive film 10 facing the first semiconductor wafer 60.
  • alignment of the semiconductor element 44 is performed on the first semiconductor wafer 60 using the alignment mark of the semiconductor element 44 and the alignment mark of the first semiconductor wafer 60.
  • the configuration is particularly limited if digital image data can be obtained for the image or the reflected image of the alignment mark of the first semiconductor wafer 60 and the image or the reflected image of the alignment mark of the semiconductor element 44.
  • known imaging devices can be used as appropriate.
  • the semiconductor element 44 is placed on the element region of the first semiconductor wafer 60 via the anisotropic conductive film 10, and for example, a predetermined pressure is applied, and it is determined in advance. It is heated to a temperature, held for a predetermined time, and temporarily crimped. This is performed for all the semiconductor devices 44, and as shown in FIG. 29, all the semiconductor devices 44 are temporarily pressure-bonded to the device region of the first semiconductor wafer 60.
  • a predetermined pressure is applied to the semiconductor elements 44, and the semiconductor elements 44 are heated to a predetermined temperature.
  • the plurality of semiconductor elements 44 are all joined together to the element region of the first semiconductor wafer 60 while holding for a predetermined time. This bonding is called full pressure bonding.
  • the terminal (not shown) of the semiconductor element 44 is bonded to the anisotropic conductive film 10
  • the terminal (not shown) of the first semiconductor wafer 60 is bonded to the anisotropic conductive film 10.
  • the first semiconductor wafer 60 to which the semiconductor element 44 is bonded via the anisotropic conductive film 10 is separated into individual element regions by dicing or laser scribing or the like. Thereby, the laminated body 40 with which the semiconductor element 42, the anisotropic conductive film 10, and the semiconductor element 44 were joined can be obtained. As described above, in the full pressure bonding, by collectively bonding the plurality of semiconductor elements 44, the tact time can be reduced and the productivity can be enhanced.
  • the temporary pressure bonding is to temporarily attach the anisotropic conductive film to a connection target such as a semiconductor element.
  • a connection target such as a semiconductor element.
  • temporary press-fit strength becomes important.
  • the temperature condition and pressurization condition in a temporary pressure bonding process are not specifically limited, For example, according to a curable resin layer, it sets suitably.
  • temporary pressure bonding for example, the anisotropic conductive film 10 is placed on a semiconductor element to be connected or a wiring substrate, and pressure and temperature are temporarily pressure bonded over an appropriate time.
  • the anisotropic conductive film 10 may be cured, and curing may proceed before the final pressing, and the final pressing may not be performed, so the temperature of the temporary pressing may not accelerate the curing reaction. It is desirable that the temperature of the
  • the temperature condition in the main pressure bonding is not particularly limited, but is preferably a temperature higher than the temperature of the temporary pressure bonding, and specifically, more preferably 130 to 200 ° C.
  • the pressurizing condition in the main pressure bonding is not particularly limited, but is appropriately set according to the purpose, and preferably 40 to 100 MPa.
  • the time of the main pressure bonding is not particularly limited, but may be appropriately set according to the purpose, and is preferably 3 to 15 seconds.
  • the atmosphere at the time of bonding, heating temperature, pressing force (load), and processing time can be mentioned as control factors, but conditions suitable for devices such as semiconductor elements used should be selected. it can.
  • the atmosphere at the time of bonding can be selected from under the atmosphere, an inert atmosphere such as a nitrogen atmosphere, and a vacuum state.
  • a second example of a method of manufacturing a laminate using the composite anisotropic conductive member will be described.
  • 31 to 33 are schematic views showing, in the order of steps, a second example of a method of manufacturing a laminate using the anisotropic conductive member of a composite material according to the embodiment of the present invention.
  • the second example of the method of manufacturing a laminate using an anisotropic conductive member of a composite material is 3 compared to the first example of the method of manufacturing a laminate using an anisotropic conductive member of a composite material.
  • an alignment mark (not shown) is provided on the back surface 44b, and a terminal (not shown) is provided. Furthermore, the anisotropic conductive film 10 is provided on the surface 44 a of the semiconductor element 44. In addition, the anisotropic conductive film 10 is provided on the surface 46 a of the semiconductor element 46 as well. For example, the anisotropic conductive film 10 is provided on the surface 46 a of the semiconductor element 46 by the bonding method of the anisotropic conductive member 11 of the composite material 70 described above.
  • the width and the like of the anisotropic conductive member 11 can be adjusted as described above, so the anisotropic conductive member 11, that is, the anisotropic conductive film 10
  • the semiconductor device 44 can be mounted without protruding from the surface 44 a and the back surface 44 b of the semiconductor device 44 and the surface 46 a of the semiconductor device 46.
  • the anisotropic conductive film 10 can be used for bonding even if the semiconductor elements 44 and 46 etc. are miniaturized, and can be used for mounting.
  • the semiconductor element 46 is temporarily pressure-bonded to the back surface 44 b of the semiconductor element 44 via the anisotropic conductive film 10.
  • all the semiconductor elements 44 are temporarily pressure-bonded to the element region of the first semiconductor wafer 60 through the anisotropic conductive film 10, and the semiconductor elements through all the semiconductor elements 44 through the anisotropic conductive film 10.
  • the main pressure-bonding is performed under predetermined conditions. Thereby, the semiconductor element 44 and the semiconductor element 46 are joined via the anisotropic conductive film 10, and the semiconductor element 44 and the first semiconductor wafer 60 are joined via the anisotropic conductive film 10.
  • the semiconductor element 44, the semiconductor element 46 and the terminal (not shown) of the first semiconductor wafer 60 are bonded to the anisotropic conductive film 10.
  • the first semiconductor wafer 60 in which the semiconductor element 44 and the semiconductor element 46 are joined via the anisotropic conductive film 10 is, for example, dicing or laser scribing for each element area. Individualize by Thereby, the laminated body 40 in which the semiconductor element 42, the semiconductor element 44 and the semiconductor element 46 are joined via the anisotropic conductive film 10 can be obtained.
  • the substrate has a groove, and an anisotropic conductive member is provided in the groove, and functions as a support substrate for the anisotropic conductive member and as a release substrate.
  • the substrate is preferably one having high light transmittance for alignment, and is preferably transparent as described above.
  • a base material for example, PET (polyethylene terephthalate), COP (cycloolefin polymer), COC (cycloolefin copolymer) and the like are used.
  • the substrate may be configured to be provided with a release layer on the inner surface of the groove in order to facilitate peeling of the anisotropic conductive member from the groove as described above.
  • the release layer is made of, for example, a silicone resin or a fluorine resin.
  • An anisotropic conductive member ie, an anisotropic conductive film
  • the conductive particles are preferably dispersed in the curable resin layer.
  • the conductive particles are particles containing a conductive material described later contained in the curable resin layer.
  • the conductive material preferably exposes the particle surface. By being exposed, conduction with the connection target can be stably ensured.
  • the average particle diameter A of the conductive particles is preferably in the range of 5% to 90% of the width of the line, more preferably in the range of 15% to 70%, and most preferably in the range of 30% to 50%.
  • the average particle diameter of the conductive particles is determined by the groove depth and groove width of the substrate on which the anisotropic conductive member is provided, due to manufacturing constraints, and the size not exceeding the diameter of the groove of the substrate is the maximum particle diameter It becomes a value.
  • the width of the groove corresponds to the width of the line.
  • the conductive material constituting the conductive particles is not particularly limited, and metal particles, metal-coated resin particles and the like are used. Examples of the metal particles include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), and nickel (Ni). Other than this, it is also possible to use particles in which core particles of nickel are coated with gold plating.
  • the metal-coated resin particles are, for example, particles obtained by coating core particles of plastic particles with metal plating of nickel or gold.
  • the metal-coated resin particles for example, non-conductive particles such as carbon, glass, ceramic and plastic coated with noble metals such as Au, Ag and Pt can be used.
  • the metal-coated resin particles the above-mentioned non-conductive particles may be coated with Cu, Ni or the like, and the above-mentioned noble metal may be coated on the outer surface of the coating layer.
  • a shape of electroconductive particle it is not limited to spherical shape and plate shape, and needle shape or a spheroid shape may be sufficient.
  • the content of the conductive particles is expressed in volume%.
  • the content of the conductive particles is preferably 30 to 95% by volume with respect to the volume of the anisotropic conductive member.
  • the content of conductive particles is Cs.
  • S be the cross-sectional area of the plane parallel to the width of the line of the anisotropic conductive member and orthogonal to the surface of the substrate
  • L be the length orthogonal to the line width of the anisotropic conductive member. .
  • the length L does not have to be taken from the end in the direction orthogonal to the line width of the anisotropic conductive member, and an arbitrary value containing five or more conductive particles should be adopted.
  • the number of conductive particles is Ns.
  • the average particle radius of the conductive particles is RA .
  • the volume Vs of spherical conductive particles, Vs (4 ⁇ R A 3/ 3) is ⁇ Ns.
  • the cross-sectional area and thickness of the anisotropic conductive member are calculated from the two cross-sectional images. Let the average value of the obtained cross-sectional area and thickness be the cross-sectional area S and thickness T of an anisotropic conductive member. Further, the average particle diameter A of the conductive particles is a plane parallel to the width direction of the line of the anisotropic conductive member and perpendicular to the longitudinal direction of the line using the scanning electron microscope as described above.
  • the central part of arbitrary five conductive particles is cut out, and it is set as the average value of the length of the thickness direction of the anisotropic conductive member of the conductive particle of the cut-out section.
  • the average thickness Dt of the conductive particles is similarly cut out and cut out the central portion of any five conductive particles in a plane parallel to the width direction and the length direction of the line of the anisotropic conductive member.
  • the average value of the diameters of the circles inscribed in the conductive particles of the cross section is taken.
  • the mean particle radius R A is a half value of the mean value of the mean particle diameter A obtained as described above.
  • the number of particles of the conductive particles is a value obtained by measuring the number of particles of the anisotropic conductive member included in a plane parallel to the surface of the anisotropic conductive member in the central portion in the thickness direction using a scanning electron microscope It is.
  • the plate-like conductive particles have, for example, plate-like particles having a composition such as BaFe (barium ferrite), SrFe (strontium ferrite), CoCr, CoPt or the like. If the particles are hexagonal, they have an easy axis of magnetization perpendicular to the hexagonal plate surface, so that orientation by a magnetic field is easy.
  • BaFe is preferable because it is insulating but has a plate-like shape, and the magnetic field easy axis is normal to the plate surface.
  • the plate-like particles described above When the plate-like particles described above are insulating, they have a conductive layer to impart conductivity.
  • the particles are BaFe (barium ferrite) particles
  • the plate-like conductive particles are those in which the conductive layer is formed on the surface of the magnetic particles.
  • the conductive layer is made of, for example, a metal film or a carbon film.
  • the metal film is formed of, for example, a single metal film such as Au, Cu, Ag, or Ni, and an alloy film of these metals.
  • the metal film is formed by, for example, a plating method, a vapor deposition method, and a sputtering method.
  • the carbon film is formed by, for example, CVD (Chemical Vapor Deposition).
  • the plate-like conductive particles preferably have a coercive force of 25 kA / m or more as a coercivity. If the coercivity is 25 kA / m or more, the orientation of the plate-like conductive particles can be maintained for a long time even in the absence of an external magnetic field after the application of the external magnetic field.
  • the plate-like conductive particles mean that the aspect ratio represented by (average particle diameter A) / (average thickness Dt of conductive particles) is 3 to 20. The aspect ratio is preferably 4 to 15.
  • the average particle diameter B of the plate-like conductive particles is determined using the scanning electron microscope as described above to determine the diameter of the circumscribed circle of 50 conductive particles, and the obtained 50 conductive particles are obtained.
  • the shape of the plate-like conductive particles is the shape of the surface, but is not particularly limited, and may be any of a circle, a square, a pentagon, a hexagon, and the like.
  • the content of the plate-like conductive particles is represented by volume%.
  • the content of the plate-like conductive particles is preferably 30 to 95% by volume with respect to the volume of the anisotropic conductive member.
  • the content of conductive particles is Cs.
  • S be the cross-sectional area of a plane parallel to the width of the line of the anisotropic conductive member and perpendicular to the longitudinal direction of the line
  • L be the length orthogonal to the line width of the anisotropic conductive member. Do. The length L does not have to be taken from the end in the direction orthogonal to the line width of the anisotropic conductive member, and an arbitrary value containing five or more conductive particles should be adopted.
  • the number of particles of the conductive particles is the number of particles of the anisotropic conductive member included in the plane of length L in which the central portion in the thickness direction is parallel to the surface of the anisotropic conductive member using a scanning electron microscope Is the measured value.
  • the curable resin layer preferably has a bonding property to the object to be connected.
  • the curable resin layer exhibits fluidity in a temperature range of 50 ° C. to 200 ° C., for example, and is preferably one which cures at 200 ° C. or higher.
  • the curable resin layer contains at least a curable resin.
  • the curable resin has electrical insulation. Electrical insulation means that the electrical resistance is 10 10 ⁇ ⁇ m or more.
  • the curable resin include resins that are cured by heat or UV light (ultraviolet light). That is, thermosetting resins and photocurable resins can be mentioned.
  • thermosetting resin examples include epoxy resins, phenol resins, polyimide resins, polyester resins, polyurethane resins, bismaleimide resins, melamine resins, phenoxy resins, and isocyanate resins.
  • photocurable resin examples include polymers in which a carbon-carbon double bond is introduced into the polymer side chain or main chain or at the main chain terminal. Among them, a thermosetting resin is preferable because adhesion to a connection target is further enhanced, and a polyimide resin and / or an epoxy resin is preferable because insulation reliability is further improved and chemical resistance is excellent.
  • the curable resin may be used alone or in combination of two or more.
  • the curable resin layer may contain components other than the curable resin.
  • the curable resin layer may contain a polymerization initiator.
  • the polymerization initiator includes a thermal polymerization initiator and a photopolymerization initiator. Among them, thermal cationic polymerization initiators are preferred. Examples of the cationic photopolymerization initiator include aromatic diazonium salts, sulfonium salts, iodonium salts, phosphonium salts, benzoin tosylate, and o-nitrobenzyl tosylate.
  • the curable resin layer may also contain a curing agent.
  • a curing agent aromatic amines such as diaminodiphenylmethane and diaminodiphenyl sulfone, aliphatic amines, imidazole derivatives such as 4-methylimidazole, dicyandiamide, tetramethylguanidine, thiourea addition amine, methylhexahydrophthalic anhydride, etc.
  • a silane coupling agent As an additive contained in a curable resin layer, a silane coupling agent, antioxidant, a migration prevention agent, a filler etc. are mentioned besides the above.
  • the present invention is basically configured as described above. As mentioned above, although the composite material of the present invention was explained in detail, the present invention is not limited to the above-mentioned embodiment, and it goes without saying that various improvements or modifications may be made within the scope of the present invention. is there.
  • Example 1 preparation of a composite shown in FIG. 1 was tried as Example 1.
  • Example 2 preparation of the composite shown in FIG. 3 was tried.
  • Example 1 and Example 2 will be described.
  • Example 1 [Anisotropic conductive member] (Curable resin component) Phenoxy resin (Nippon Steel Sumikin Chemical Co., Ltd., YP-50) 40 parts by mass Liquid epoxy resin (Mitsubishi Chemical Co., Ltd., jER 828) 55 parts by mass Thermal cationic polymerization initiator (Sanshin Chemical Industry Co., Ltd., SI-60L) 4 parts by mass 1 part by mass of silane coupling agent (Shin-Etsu Chemical Co., Ltd., KBM-403) A thermally polymerized composition (curable resin component) containing the above was prepared. (Conductive particles) Ag (silver) particles having a sphere equivalent average particle diameter (diameter) of 1.3 ⁇ m were used.
  • Curable resin layer Preparation of Liquid Curable Resin Component
  • the conductive plate-like particles were mixed and dispersed in the above-mentioned curable resin component at the ratio shown below.
  • Quantity ratio Curable resin component 50 parts by mass Conductive particle component 40 parts by mass (mixing and dispersion)
  • the curable resin component and the conductive particle component were respectively charged in appropriate amounts into a homogenizer (ULTRA-TURRAX (registered trademark)) manufactured by IKA Co., and subjected to mixing and dispersion treatment.
  • ULTRA-TURRAX registered trademark
  • the cooling mechanism was equipped and it kept at temperature 60 degrees C or less.
  • a transparent PET substrate having a thickness of 50 ⁇ m and a side length of 150 mm was prepared.
  • a photoresist (Sumiresist (registered trademark) PFI-38 (trade name) manufactured by Sumitomo Chemical Co., Ltd.) is applied on the entire surface of the PET substrate by spin coating to a dry thickness of 1.5 ⁇ m, and the temperature is 70 ° C.
  • the resist film was formed by drying in an oven for 2 minutes. Thereafter, the resist film was subjected to vacuum contact exposure using a photomask having a pattern capable of irradiating a portion with a line width of 0.5 mm and a length of 100 mm with UV light.
  • a deep UV lamp manufactured by Ushio Inc.
  • channel 0.5 mm in width, 100 mm in length, and 1.3 micrometers in depth.
  • the grooves had substantially the same width between the opening and the bottom.
  • channel was 51.5 micrometers in thickness.
  • a silicone resin was applied as a mold release agent to both side surfaces in the groove.
  • the wiring substrate a glass substrate having a thickness of 700 ⁇ m on which ITO (Indium Tin Oxide) comb wiring (hereinafter, simply referred to as wiring) is formed was used.
  • a TEG (Test Element Group) chip size: 5 mm ⁇ 10 mm, thickness: 0.5 mm, gold-plated bump size: 5 ⁇ m ⁇ 30 ⁇ m, bump height: 5 ⁇ m, space between bumps: 5 ⁇ m, bump number: 30
  • the anisotropic conductive member was placed on the wiring of the wiring substrate so that the anisotropic conductive member was in contact with the wiring, the anisotropic conductive member was temporarily pressure-bonded to the wiring by pressing while heating. .
  • the base material was peeled off, leaving only the anisotropic conductive member on the wiring.
  • heat conductive Teflon (registered trademark) sheet with an average thickness of 50 ⁇ m is used as a buffer material, temperature 180 ° C., pressure 60 MPa, and time 5 seconds with a heating tool. Heating and pressure bonding were performed to obtain a joined body.
  • the anisotropic conductive member could be used as an anisotropic conductive film.
  • Example 2 was the same as Example 1 except that the shape of the groove was trapezoidal as shown in FIG. 3 as compared with Example 1.
  • the composite of Example 2 could also be made.
  • the above-mentioned bonded body could also be obtained.
  • an anisotropic conductive member having a narrow width of 0.5 mm can be formed, and can also be used as an anisotropic conductive film.
  • the width could not form an anisotropic conductive member of 0.5 mm.
  • anisotropic conductive film 11 anisotropic conductive member 12, 13 conductive particle 13a, 14a surface 14 curable resin layer 14b back surface 15 peeling layer 17 circumscribed circle 20 1st wiring board 21, 25 base material 22, 26 electrode 24 second wiring substrate 30a, 30b terminal 30c end surface 32 semiconductor layer 32a, 34a, 36a surface 34 rewiring layer 36 passivation layer 37 wiring 38 pad 40 laminated body 42, 44, 46 semiconductor element 44a, 46a surface 44b back surface 45 terminal 52 Semiconductor Device 54 Sensor Chip 56 Lens 60 First Semiconductor Wafer 70, 90 Composite Material 72 Base Material 72a Surface 73 Liquid Film 74 Groove 74a Opening 74b Bottom 74c Inner Surface 75 Region 76 Release Layer 77 Resist Film 78 Opening 80 Mold 82 Protrusions 91 Base material 92 Grooves 93 Anisotropy Conductive member A average particle diameter B average particle diameter C L cut line D thickness direction Ds stacking direction Lv laser light N normal P L

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  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

L'invention concerne un matériau composite qui comprend un élément conducteur anisotrope qui peut être utilisé pour une liaison même si des éléments semi-conducteurs ou similaires sont réduits. Le matériau composite comprend : un substrat qui a une rainure ; et un élément conducteur anisotrope qui est disposé dans la rainure et pouvant être détaché de la rainure. L'élément conducteur anisotrope comprend une couche de résine durcissable qui contient des particules conductrices.
PCT/JP2018/037927 2017-10-12 2018-10-11 Matériau composite WO2019074060A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019548237A JPWO2019074060A1 (ja) 2017-10-12 2018-10-11 複合材

Applications Claiming Priority (2)

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JP2000272217A (ja) * 1999-03-25 2000-10-03 Ricoh Microelectronics Co Ltd 印刷方法及び印刷装置
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JPH03132095A (ja) * 1989-10-18 1991-06-05 Toshiba Corp 異方性導電接着剤接続構造および異方性導電接着剤接続方法
JPH10291293A (ja) * 1997-02-21 1998-11-04 Ricoh Micro Electron Kk 凹版印刷方法及び装置、バンプまたは配線パターンの形成方法及び装置、バンプ電極、プリント配線基板、バンプ形成方法、並びに、成形転写方法
JPH1187879A (ja) * 1997-09-12 1999-03-30 Seiko Epson Corp シート状電子機器
JP2000272217A (ja) * 1999-03-25 2000-10-03 Ricoh Microelectronics Co Ltd 印刷方法及び印刷装置
JP2009105117A (ja) * 2007-10-22 2009-05-14 Sony Chemical & Information Device Corp 異方性導電接着剤
JP2009147231A (ja) * 2007-12-17 2009-07-02 Hitachi Chem Co Ltd 実装方法、半導体チップ、及び半導体ウエハ
JP2014191892A (ja) * 2013-03-26 2014-10-06 Fujifilm Corp 異方導電性シート及び導通接続方法
JP2015170581A (ja) * 2014-03-11 2015-09-28 デクセリアルズ株式会社 異方性導電フィルム、並びに、接続方法及び接合体
JP2016031888A (ja) * 2014-07-30 2016-03-07 日立化成株式会社 異方導電性フィルムの製造方法及び接続構造体
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WO2016152791A1 (fr) * 2015-03-20 2016-09-29 デクセリアルズ株式会社 Film conducteur anisotrope et structure de connexion

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