WO2019066136A1 - Structure de poutres en grille d'usine de semiconducteurs et son procédé de construction - Google Patents

Structure de poutres en grille d'usine de semiconducteurs et son procédé de construction Download PDF

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Publication number
WO2019066136A1
WO2019066136A1 PCT/KR2017/013496 KR2017013496W WO2019066136A1 WO 2019066136 A1 WO2019066136 A1 WO 2019066136A1 KR 2017013496 W KR2017013496 W KR 2017013496W WO 2019066136 A1 WO2019066136 A1 WO 2019066136A1
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WIPO (PCT)
Prior art keywords
unidirectional
beams
lattice
mortar
directional
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PCT/KR2017/013496
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English (en)
Korean (ko)
Inventor
유영기
김용구
노현섭
안상경
이난희
이은석
전병갑
정재은
Original Assignee
삼성물산 주식회사
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Publication of WO2019066136A1 publication Critical patent/WO2019066136A1/fr

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    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
    • E04B5/00—Floors; Floor construction with regard to insulation; Connections specially adapted therefor
    • E04B5/02—Load-carrying floor structures formed substantially of prefabricated units
    • E04B5/04—Load-carrying floor structures formed substantially of prefabricated units with beams or slabs of concrete or other stone-like material, e.g. asbestos cement
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
    • E04B5/00—Floors; Floor construction with regard to insulation; Connections specially adapted therefor
    • E04B5/02—Load-carrying floor structures formed substantially of prefabricated units
    • E04B5/08—Load-carrying floor structures formed substantially of prefabricated units assembled of block-shaped elements, e.g. hollow stones

Definitions

  • the present invention relates to a split grating structure of a semiconductor factory and a method of constructing the same, and more particularly to a grating structure in which a grating beam, a span column and a one-way beam are manufactured by a PC, And a method of constructing the beam structure.
  • the Clean Room of a semiconductor factory is an environmental control system that maintains the temperature, humidity, pressure, vibration and oxygen ratio, distribution and speed of the air current within a certain range as well as dust particles present in a certain indoor air.
  • ICRs industrial clean rooms
  • BCR Biological Clean Room
  • the industrial clean room controls the environmental conditions such as temperature, humidity, pressure and vibration, as well as the cleanliness of the fine particles, while controlling fine particles as the main control target.
  • the environmental conditions such as temperature, humidity, pressure and vibration, as well as the cleanliness of the fine particles, while controlling fine particles as the main control target.
  • - LCD, aerospace, and precision machinery industries are making thinner and thinner products because of the development of new technology.
  • Degradation of precision due to product degradation and reliability will have a significant impact on production yield. Therefore, the entire plant or necessary workplace is formed into a clean room with high cleanliness.
  • the frame construction of the clean room architecture is different from the frame construction of the general building.
  • FIG. 1 the inner structure of the clean room building is schematically shown in FIG. 1, and a reinforcing bar is formed on the floor concrete 1 and a concrete is installed thereon, thereby forming a main column 2, a grille beam is formed in the form of a lattice by placing concrete on a site so as to be in contact with one side of the upper pillar 3 and the main pillar 2,
  • the girder 5 and the slab 6 are installed on the main pillar 2 and the concrete is installed on the upper part of the main pillar 2 to form the lattice beam 4,
  • a clean room layer 8 is formed on the upper side of the lattice girder 4 and an upper part of the clean room layer 8 is formed on the upper side of the lattice girder 4,
  • a system sealing portion 9 in which a facility such as a HEPA filter, an illumination or the like is embedded is provided between the beam 5 and the slab 6,
  • the support facility layer 7 and the system sealing section 9 are provided with support for maintaining the environmental conditions of the clean room layer 8,
  • the frame is constructed with on-cast concrete to meet the vibration conditions of the clean room.
  • a technique capable of having a structure capable of further strengthening the coupling between the lattice beam and the unidirectional beam is also required.
  • the present invention has been made to solve the problems of the prior art, and it is an object of the present invention to provide a method of manufacturing a semiconductor device, which can firmly bond the unidirectional beam to the ash pillar and the lattice beam by a method other than pouring concrete, And the structure can be structured so that the connection between the lattice beam and the unidirectional beam and the aspath can be made more rigid as the structure is made large enough to withstand vibration A lattice girder structure of a semiconductor factory and a construction method thereof.
  • a lattice girder structure of a semiconductor factory is installed in a semiconductor factory and includes a vertical column, which is vertically and horizontally installed at regular intervals, and a vertical column, , And a rectangular grid beam installed in a form of filling a rectangular horizontal area formed by a single directional beam and formed with a protruding step on the side of the unidirectional beam And a lattice beam is formed on the side surface of the lattice beam so that a bottom surface of the side surface step of the lattice beam is mounted on the top surface of the side surface side surface of the one side of the lattice beam, The gap between the two unidirectional end portions, and the gap between the side of the unidirectional beam and the side of the lattice beam, Thereby, it is fixed in one direction is bonded between the end beams, and is fixed in one direction beams and lattice beams joined to each other.
  • a plurality of vertical roots are inserted in the longitudinal direction of the horizontal post, and the upper end of the vertical roots is preferably more protruded than the upper surface of the horizontal post, and the lower surface adjacent to the end of the one-
  • a vertical stem insertion groove is formed in which the upper end of the vertical stem protruded more than the upper surface of the column is inserted, and the vertical stem is inserted into the vertical stem insertion groove, thereby coupling the vertical stem and the unidirectional beam.
  • each of the two unidirectional beams meeting at the upper portion of the riser is preferably cut so that the upper edge of the end portion is formed with a step, and the two unidirectional beam portions are adjacent to each other
  • the mortar is injected into the space formed by the step difference so that the mortar is solidified while filling the gap between the space and the one directional beam and the gap between the one directional beam and the grating beam.
  • the right-sided muscle insertion groove preferably penetrates to the bottom of the step formed by cutting the one-side end portion so that the mortar that is filled in the space formed by the two one- So that the inner circumferential surface of the orthogonal muscle insertion groove is fixedly coupled with the outer circumferential surface of the vertical muscle protruding to the upper surface of the post column.
  • a plurality of trench-like trenches are formed along the longitudinal direction of the unidirectional beam, As the mortar injected at intervals is filled in the trench grooves, the mortar coagulates and bonds together in both the side surface and the bottom surface between the unidirectional beam and the lattice beam.
  • a plurality of stepped trench grooves having a height of a predetermined length are formed along the surface of the lattice beam at the bottom surface of the depressed side of the side surface of the lattice beam, As the mortar is filled in the trench grooves, the mortar is solidified and bonded to both the side surface and the bottom surface between the unidirectional beam and the lattice beam.
  • a method of constructing a lattice girder structure of a semiconductor factory having the above-described structure includes a first step of precastly forming the lattice beam and the unidirectional beam, and a step of installing the lattice beam horizontally and longitudinally at regular intervals, A second step of arranging the vertical roots so as to protrude higher than the form height, and a second step of connecting the one-directional beams, which are shown as precast, across the upper portions of the adjacent two columns.
  • first step preferably, upper edges are cut at both side ends of the unidirectional beam to form stepped portions.
  • fourth step a space is formed between the adjacent grating ribs in order to form steps do.
  • the orthogonal muscle insertion grooves are formed so as to penetrate from the step bottom surface formed at both side ends of the unidirectional beam to the bottom surface of the unidirectional beam, and in the fifth step, The distance between the end portions of two unidirectional beams adjacent to each other without overflowing the upper portion of the unidirectional beam and the distance between the unidirectional beam and the lattice beam, The mortar is injected into the gap between the inner circumferential surface of the right vertical muscle insertion groove and the vertical outer peripheral surface to solidify.
  • a plurality of stepped trench grooves whose height is lowered by a predetermined length on the upper surface of the protruding shape of the side surface in the one-directional beam are formed along the longitudinal direction of the one-
  • the mortar is injected at intervals between the beam and the lattice beam to fill the trench grooves, so that the mortar is solidified and adhered to both sides and the bottom of the lattice beam.
  • the lattice girder structure of the semiconductor factory and the method of constructing the same according to the present invention, it is possible to firmly connect the unidirectional beam with the ash pillar and the lattice beam by a method other than the concrete pouring in the semiconductor factory, And the coupling between the lattice beam and the unidirectional beam is further strengthened as the structure is made large enough to withstand the vibration, .
  • 1 is an internal cross-sectional perspective view of a semiconductor plant
  • FIG. 2 is an exploded perspective view of a lattice girder structure according to the present invention
  • FIG. 3 is a perspective view of a lattice beam in a lattice beam structure according to the present invention
  • FIG. 4 is a perspective view of a unidirectional beam in the lattice girder structure according to the present invention
  • FIG. 5 is a perspective view of a post column in a lattice girder structure according to the present invention
  • FIG. 6 is a plan sectional view of a lattice girder structure according to the present invention.
  • FIG. 7 is a partially enlarged view of the area indicated by A in Fig. 6,
  • the lattice girder structure of the semiconductor factory according to the present invention is installed in a semiconductor factory, and includes a vertical column 10, which is vertically and horizontally installed at regular intervals, and two adjacent columns 10), and a rectangular grid (not shown) provided so as to fill a rectangular horizontal area formed by being surrounded by the unidirectional beam (30) And a beam 20.
  • a protruding step is formed on the side surface of the unidirectional beam 30, and a recessed or retreated step is formed on the side surface of the lattice beam 20, 20) is provided on the upper surface of the side step of the unidirectional beam (30).
  • the upper surface of the side step of the unidirectional beam 30 shown in FIG. 4 is referred to as a 'protruding step upper surface 33', and the bottom surface of the stepped side of the side of the lattice beam 20 shown in FIG. 3 is referred to as a ' ).
  • the mortar 40 is provided for joining the ash pillar 10, the lattice beam 20, and the unidirectional beam 30 constructed as described above.
  • the mortar 40 is injected into the gap between the ends of the two one-way beam 30 that meet at the top of the riser 10 and the gap between the side of the one beam 30 and the side of the beam 20,
  • the unidirectional beams 30 are joined and fixed together at their ends, and the unidirectional beam 30 and the lattice beam 20 are joined and fixed to each other.
  • the riser post 10 is provided with a point where two unidirectional beams 30 are connected in parallel, as shown in FIG. 6, It is installed at the bottom of the corner point to support the entire structure.
  • a plurality of vertical roots 12 are inserted in the longitudinal direction of the horizontal post 10, and the upper ends of the vertical roots 12 are connected to the upper surface of the vertical post 10, 8 and 9, on the bottom surface of the one-directional beam 30 adjacent to the end of the one-directional beam 30, 36 are formed and the rectilinear muscle 12 is inserted into the vertical muscle insertion groove 36 until the bottom surface near the end of the one-directional beam 30 is seated on the upper surface of the post 10.
  • the alternating beam 10 and the one-directional beam 30 are firmly coupled without being separated from each other.
  • Each of the two unidirectional beams 30, which meet at the upper part of the riser 10, is cut so that the upper edge of the end is formed with a step, and the ends of the two unidirectional beams 30 are spaced apart 8, the mortar 40 is injected into the space formed in the shape of a container as shown in FIG. 8, so that the mortar 40 is inserted into the container
  • the mortar 40 is filled in the gap d2 between the two ends of the one directional beam 30 and the gap d1 between the one directional beam 30 and the lattice beam 20, .
  • the mortar 40 can penetrate into the narrow gap so that the lattice beam 20, the unidirectional beam 30, ) Is much simpler and more efficient than the method of combining.
  • the distance d2 between the ends of the two beams 30 and the distance d2 between the beam 30 and the grid beam 20 can be used as a point at which shrinkage occurs during drying. After penetration, the gap is narrowed as it dries, allowing for more tight coupling between structures.
  • the present invention by providing the upper end stepped portion 32 at the end of the unidirectional beam 30, the two unidirectional beams 30 and the four gratings 30 connected to the side of the unidirectional beam 30, It is possible to prevent the mortar 40 from overflowing to the upper portion of the unidirectional beam 30 when the mortar 40 is injected by forming a space in the shape of a container while the beam 20 meets, The mortar 40 is more easily infiltrated into the spacing d2 between the end portions of the unidirectional beam 30 and the spacing d1 between the unidirectional beam 30 and the lattice girder 20 due to the load of the filled mortar 40 .
  • the above-described orthogonal muscle insertion groove 36 is formed so as to completely penetrate from the upper surface of the upper end step 32 to the lower surface of the one-
  • the mortar 40 injected through the side step upper step 32 is also injected into the vertical groove insertion groove 36 so that the vertical wall 12 is firmly attached to the vertical groove insertion groove 36 Thereby preventing the unidirectional beam 30 from being separated from the upper surface of the riser 10 even if vibration is generated.
  • a 'trench groove 34' is formed on the protruding step upper surface 33 formed on the side surface of the unidirectional beam 30, as shown in FIG.
  • the bottom surface 23 of the retreating step of the side of the lattice beam 20 is seated on the upper side surface 33 of the side protruding step of the unidirectional beam 30 and the mortar 40 There is a problem that any joint member such as concrete can not penetrate.
  • the trench groove 34 When the trench groove 34 is formed, a space is formed between the recessed step bottom surface 23 and the protruding stepped upper surface 33 of the side surface of the lattice beam 20, which is held on the upper side surface 33 of the side protruding step of the one-
  • the mortar 40 injected into the space defined by the upper end step 32 of the one side beam 30 flows down between the one side beam 30 and the spacing d1 between the one side beam 30 and the lattice beam 20,
  • the trench grooves 34 are filled with the mortar 40 so that the connection can be made.
  • the unidirectional beam 30, the lattice beam 20, and the beam column 10 can be assembled to each other by a simple process, but also can be firmly coupled.
  • This effect is caused by the injection of the mortar 40 and the permeability of the mortar 40 due to the weight of the mortar 40 due to the side step upper step 32 formed at both ends of the unidirectional beam 30, 12 can be inserted into the unidirectional beam 30 and the mortar 40 is injected into the transverse right groove insertion groove 36.
  • the mortar 40 is injected into the transverse right groove insertion groove 36.
  • the trench grooves may be formed not only on the side end upper step 32 of the unidirectional beam 30 but also on the recessed step bottom surface 23 formed on the side surface of the lattice beam 20. (not shown)
  • the trench grooves 34 are filled with the mortar 40 and then the entire trench grooves 34 are filled with the trench grooves 34.
  • the angle between the side surface of the trench groove 34 and the bottom surface 23 of the retreating step at the side of the lattice beam 20 becomes an acute angle of 90 degrees or less at the moment when the mortar 40 is filled in the mortar 40, So that the joint between the unidirectional beam 30 and the lattice beam 20 can be strengthened. As shown in FIG.
  • d1 One-way beam and grid beam spacing
  • d2 One-way beam gap

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Joining Of Building Structures In Genera (AREA)

Abstract

L'invention a pour objet de réaliser une structure de poutres en grille d'usine de semiconducteurs et son procédé de construction. La structure de poutres en grille d'usine de semiconducteurs est installée à l'intérieur d'une usine de semiconducteurs et comprend : des montants qui sont des colonnes verticales érigées dans des directions longitudinale et transversale à des intervalles prédéterminés; des poutres unidirectionnelles nichées sur des portions supérieures de deux montants adjacents et fixées à celles-ci, reliant ainsi les portions supérieures des montants dans la direction transversale; et des poutres de grille rectangulaires installées de façon à remplir la zone horizontale rectangulaire formée et entourée par les poutres unidirectionnelles. Des portions étagées sont formées sur des surfaces latérales des poutres unidirectionnelles respectives de manière à faire saillie, et des portions étagées sont formées sur des surfaces latérales des poutres de grille respectives de manière à être en retrait. Des surfaces inférieures des portions étagées sur les surfaces latérales de poutres de grille respectives sont nichées sur des surfaces supérieures des portions étagées sur les surfaces latérales des poutres unidirectionnelles respectives, ce qui permet d'installer les poutres de grille. Du mortier est injecté dans un espace entre les portions d'extrémité de deux poutres unidirectionnelles qui se joignent au niveau des portions supérieures des montants et dans un espace entre des surfaces latérales des poutres unidirectionnelles et des surfaces latérales des poutres de grille. Par conséquent, les portions d'extrémité respectives des poutres unidirectionnelles sont liées et fixées les unes aux autres, et les poutres unidirectionnelles ainsi que les poutres de grille sont liées et fixées les unes aux autres, ce qui permet d'obtenir un moyen capable de mener à bien le couplage en un temps beaucoup plus court que dans le cas du coulage et du durcissement du béton. De plus, la structure est suffisamment grande pour supporter des vibrations de telle sorte que le couplage entre les poutres de grille, les poutres unidirectionnelles et les montants peut devenir plus robuste.
PCT/KR2017/013496 2017-09-28 2017-11-24 Structure de poutres en grille d'usine de semiconducteurs et son procédé de construction WO2019066136A1 (fr)

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KR1020170126554A KR102033671B1 (ko) 2017-09-28 2017-09-28 반도체공장의 격자보 구조물

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190127979A1 (en) * 2017-10-30 2019-05-02 Samsung C&T Corporation High-damping rc lattice beam and high-damping rc lattice beam structure using same

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* Cited by examiner, † Cited by third party
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KR102343409B1 (ko) 2020-02-06 2021-12-24 서울대학교 산학협력단 모듈형 진동 저감 pc 슬래브
KR102330481B1 (ko) 2021-01-06 2021-11-23 삼성물산(주) 분절된 pc 격자보를 이용한 반도체 공장 구조물
KR20240015439A (ko) 2022-06-27 2024-02-05 (주)삼우종합건축사사무소 프리캐스트 격자보 시공방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010091701A (ko) * 2000-03-17 2001-10-23 배종렬 유니트 격자보 및 그 시공방법
KR200320805Y1 (ko) * 2003-04-11 2003-07-22 삼성물산 주식회사 층 공간부에서 연결되는 기둥용 프리캐스트 콘크리트부재및 이를 이용한 건축물의 기둥의 연결구조
KR100855547B1 (ko) * 2007-05-25 2008-09-01 동서 피, 씨, 씨 주식회사 클린룸 건축물의 골조 연결 구조
KR20100095737A (ko) * 2009-02-23 2010-09-01 박승우 프리캐스트 교량용 상판, 하판, 기둥 및 이를 이용한 교량 시공 방법
JP2014055443A (ja) * 2012-09-12 2014-03-27 Shimizu Corp プレキャストコンクリート壁及び柱と梁との接合構造

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003293506A (ja) * 2002-03-29 2003-10-15 Kumagai Gumi Co Ltd 鉄筋コンクリート床構造体
KR20110052994A (ko) * 2009-11-13 2011-05-19 한국건설기술연구원 강섬유 보강 시멘트 복합체를 사용한 고내구성 프리캐스트 영구 거푸집
KR200480639Y1 (ko) 2014-06-25 2016-06-20 박정익 클린룸의 억세스 플로어 고정구조

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010091701A (ko) * 2000-03-17 2001-10-23 배종렬 유니트 격자보 및 그 시공방법
KR200320805Y1 (ko) * 2003-04-11 2003-07-22 삼성물산 주식회사 층 공간부에서 연결되는 기둥용 프리캐스트 콘크리트부재및 이를 이용한 건축물의 기둥의 연결구조
KR100855547B1 (ko) * 2007-05-25 2008-09-01 동서 피, 씨, 씨 주식회사 클린룸 건축물의 골조 연결 구조
KR20100095737A (ko) * 2009-02-23 2010-09-01 박승우 프리캐스트 교량용 상판, 하판, 기둥 및 이를 이용한 교량 시공 방법
JP2014055443A (ja) * 2012-09-12 2014-03-27 Shimizu Corp プレキャストコンクリート壁及び柱と梁との接合構造

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190127979A1 (en) * 2017-10-30 2019-05-02 Samsung C&T Corporation High-damping rc lattice beam and high-damping rc lattice beam structure using same
US10718114B2 (en) * 2017-10-30 2020-07-21 Samsung C&T Corporation High-damping reinforced concrete (RC) lattice beam and substructure using same

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KR102033671B1 (ko) 2019-10-18

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