WO2019065224A1 - Dispositif de traçage de motif - Google Patents

Dispositif de traçage de motif Download PDF

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Publication number
WO2019065224A1
WO2019065224A1 PCT/JP2018/033703 JP2018033703W WO2019065224A1 WO 2019065224 A1 WO2019065224 A1 WO 2019065224A1 JP 2018033703 W JP2018033703 W JP 2018033703W WO 2019065224 A1 WO2019065224 A1 WO 2019065224A1
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WO
WIPO (PCT)
Prior art keywords
substrate
pattern
scanning direction
polygon mirror
unit
Prior art date
Application number
PCT/JP2018/033703
Other languages
English (en)
Japanese (ja)
Inventor
加藤正紀
中山修一
鬼頭義昭
鈴木智也
堀正和
林田洋祐
Original Assignee
株式会社ニコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ニコン filed Critical 株式会社ニコン
Priority to CN201880058830.6A priority Critical patent/CN111065972A/zh
Priority to KR1020207011896A priority patent/KR20200062260A/ko
Priority to JP2019544544A priority patent/JP7070581B2/ja
Publication of WO2019065224A1 publication Critical patent/WO2019065224A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/12—Scanning systems using multifaceted mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/12—Scanning systems using multifaceted mirrors
    • G02B26/121—Mechanical drive devices for polygonal mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/33—Acousto-optical deflection devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/37—Non-linear optics for second-harmonic generation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G03F7/70366—Rotary scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning

Definitions

  • the present invention relates to a pattern drawing apparatus for drawing a pattern by scanning a spot light irradiated on an object to be irradiated.
  • a drawing apparatus using a rotating polygon mirror for example, as disclosed in Japanese Patent Laid-Open No. 2008-200964, a plurality of laser exposure units having a polygon mirror are provided, and a main scanning direction in which an exposure beam is scanned by the polygon mirror
  • An image forming apparatus is known in which a part (end portion) of a scanning area in is overlapped and an image is drawn by sharing by exposure beams from a plurality of laser exposure units.
  • the exposure beam is shifted in the sub scanning direction orthogonal to the main scanning direction in the overlapping region at the end of the scanning region due to the difference in the surface inclination of the multiple reflecting surfaces of the polygon mirror.
  • a drawing unit for drawing a pattern by scanning spot light of a drawing beam projected onto a substrate one-dimensionally in the main scanning direction, the substrate, and the drawing unit.
  • a pattern drawing apparatus comprising: a moving mechanism for relatively moving in a sub-scanning direction intersecting the main scanning direction, the light source device outputting a beam serving as the source of the drawing beam, and the beam from the light source device Between the first state in which the light beam is incident as the drawing beam and the second state in which the light beam is not incident on the drawing unit. And in order to shift the spot light projected from the drawing unit by a predetermined amount in the sub-scanning direction in the first state.
  • a shift control unit that controls the electric signal to change the deflection angle by the selection optical element, and an intensity that corrects a change in intensity of the spot light that accompanies a change in the deflection angle by the selection optical element And a correction unit.
  • spot light of drawing beam is projected on a flexible substrate and scanned one-dimensionally in the main scanning direction, and the substrate is moved in the sub scanning direction intersecting the main scanning direction.
  • the imaging apparatus has a drawing unit provided with a scanning optical system for focusing spot light on a substrate and scanning in the main scanning direction, and a cylindrical outer peripheral surface having a constant radius from a central axis, the substrate being the outer periphery Bay along the plane
  • a two-dimensional pattern is formed on the substrate by scanning the spot light of the drawing beam to be projected onto the substrate in the main scanning direction and the sub scanning direction intersecting the main scanning direction.
  • a pattern drawing apparatus for drawing comprising: a light source device for outputting a beam that is the source of the drawing beam; and a plurality of reflecting surfaces, wherein the drawing beam from the light source device is in the main scanning direction on the reflection surface
  • a rotating polygon mirror that changes and reflects angles in a corresponding direction, and a scanning that condenses the drawing beam reflected by each reflecting surface of the rotating polygon mirror onto spot light on the substrate and scans it in the main scanning direction
  • a drawing unit provided with an optical system, a moving mechanism for relatively moving the substrate and the drawing unit in the sub scanning direction, and a drawing period in which the spot light is scanned one-dimensionally in the main scanning direction inside
  • spot light of drawing beam is projected onto a substrate and scanned one-dimensionally in the main scanning direction, and the substrate is moved in the sub scanning direction intersecting the main scanning direction.
  • a pattern drawing apparatus for drawing a two-dimensional pattern on the substrate comprising: a light source device for outputting a beam serving as a source of the drawing beam; and a plurality of reflecting surfaces arranged around a rotation axis, A rotating polygon mirror that reflects the drawing beam by changing the angle in a direction corresponding to the main scanning direction on the reflection surface, and the drawing beam reflected on each reflection surface of the rotation polygon mirror is incident on the substrate
  • a substrate moving unit configured to support the substrate and move the substrate at a predetermined speed along the sub-scanning direction, and a drawing unit having a scanning optical system for focusing on spot light and scanning in the main scanning direction Members,
  • the alignment system which sequentially detects each of a plurality of marks formed on the substrate at predetermined intervals along the sub scanning direction, and the position measurement unit which
  • FIG. 6 is a perspective view showing a specific internal configuration of one of six drawing units shown in FIG. 1; It is a figure which shows the concrete optical arrangement
  • FIG. 7 is a control system block diagram illustrating an overall cooperative relationship of the drive control unit of the rotary drum shown in FIG. 1, the drawing control device shown in FIG. 6, and the light source device. It is a circuit block diagram which shows the concrete structure of the optical element control part for selection provided in the drawing control apparatus shown in FIG.
  • FIG. 10 is a time chart illustrating an example of timings of calculation and setting of correction information ⁇ FCn and ⁇ ACn by the selection optical element control unit illustrated in FIG. 9.
  • FIG. 9 is a view showing an example of the arrangement of drawing lines and an alignment system set on a substrate exposed by the pattern drawing apparatus shown in FIG. 1 or 8 and the arrangement of alignment marks on the substrate.
  • FIG. 13 is a graph schematically illustrating an operation of reducing the registration error when the substrate shown in FIG. 13 is slightly shrunk partially in the sub scanning direction using the X shifter mechanism by the optical element for selection (AOM) is there. It is an optical path figure explaining the mode of beam selection of a selection mirror after the optical element for selection (AOM) shown in FIG. 3, and a beam shift.
  • FIG. 3 is an optical path diagram for explaining the behavior of a beam from the reflective surface of the polygon mirror shown in FIG. 2 to the substrate.
  • FIGS. 17A and 17B are diagrams showing an optical path from a beam expander system including a parallel flat plate HVP provided in the drawing unit of FIG. 2 as a second embodiment to an aperture stop.
  • FIG. 18 is a diagram schematically illustrating a correction method in the case where the rotation speed of the rotary drum DR fluctuates when drawing a continuous pattern by the drawing unit Un as a fourth embodiment. It is a graph which exaggerates and shows an example of change (velocity nonuniformity) of a rotation angle position of rotation drum DR, and a move speed of a substrate supported by rotation drum DR.
  • a measurement example of the movement speed of the substrate using the measurement value of the encoder for measuring the rotation angle position of the rotary drum DR (the movement position of the substrate) and the clock signal is described. It is a graph to explain. Based on the measurement result of the fluctuation of the moving speed of the substrate obtained as shown in FIG.
  • FIG. 23 it is a graph in which the fluctuation rate of the moving speed of the substrate at a constant time with respect to the standard speed .
  • FIG. 24 is a circuit block diagram for measuring the fluctuation amount and fluctuation rate of the moving speed of the substrate as shown in FIG. 23 substantially in real time in a hardware configuration as a second modification of the fourth embodiment.
  • FIG. 18 is a perspective view for explaining the appearance of a beam for drawing which is reflected by one of the reflecting surfaces of the eight polygon mirror used as the sixth embodiment and directed to the f ⁇ lens system.
  • FIG. 28 is a view for explaining an example of arrangement of beams projected onto one reflection surface of the polygon mirror of FIG. 27 and a case where a portion with reduced reflectance is generated in a part of the reflection surface.
  • FIG. 29 is a graph showing an example of an intensity change of spot light scanned on a substrate during a drawing time by a reflection surface of a polygon mirror shown in FIG. 28.
  • FIG. It is a figure explaining the mode of the test exposure as a 1st measuring method, in order to obtain
  • FIG. 31 is a graph schematically representing how writing errors (line width error, dimensional error) occur in the measurement pattern exposed by the test exposure shown in FIG. 30 due to uneven reflection on one reflective surface of the polygon mirror.
  • the reflected light from the reference pattern formed on the rotary drum is used as a second measurement method in order to obtain the difference in reflectance for each reflective surface of the polygon mirror and the uneven reflection on the reflective surface in the sixth embodiment.
  • the third measurement method can be superimposed and supported on a substrate supported by a rotating drum It is a perspective view explaining the mode of mounting of a standard reflecting plate at the time of using a standard reflecting plate (sheet material).
  • a pattern drawing apparatus will be described in detail below with reference to the preferred embodiments and with reference to the attached drawings.
  • the aspect of this invention is not limited to these embodiment, What added various change or improvement is also included. That is, the components described below include those which can be easily conceived by those skilled in the art, and substantially the same components, and the components described below can be appropriately combined. In addition, various omissions, replacements or modifications of the components can be made without departing from the scope of the present invention.
  • FIG. 1 is a perspective view showing a schematic overall configuration of a pattern drawing apparatus (exposure apparatus) EX according to the first embodiment.
  • a pattern drawing apparatus exposure apparatus
  • EX Exposure apparatus
  • FIG. 1 an XYZ orthogonal coordinate system in which the direction of gravity is the Z direction is set, and X, Y, and Z directions are set according to the arrows shown in the figure.
  • the pattern drawing apparatus EX is used in a device manufacturing system for manufacturing an electronic device by performing exposure processing on a flexible sheet substrate P (hereinafter, also simply referred to as a substrate P).
  • the device manufacturing system is, for example, a manufacturing line in which a flexible display as an electronic device, a film-like touch panel, a film-like color filter for a liquid crystal display panel, a flexible wiring, or a flexible sensor is constructed. It is a system.
  • Examples of the flexible electronic device include, for example, a display panel such as an organic EL display and a liquid crystal display, and a wearable sensor sheet.
  • the sheet substrate P for example, a resin film or a foil made of metal or alloy such as stainless steel is used.
  • the material of the resin film may be, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, and vinyl acetate resin. Among them, one including at least one or more may be used.
  • the thickness and rigidity (Young's modulus) of the sheet substrate P do not cause folds or irreversible wrinkles due to buckling in the sheet substrate P when passing through the transport path of the device manufacturing system or the pattern drawing apparatus EX. If it is a range, it is good.
  • a film of PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) having a thickness of about 25 ⁇ m to 200 ⁇ m is used as a base material of the sheet substrate P.
  • the sheet substrate P may receive heat in each process performed in the device manufacturing system, it is preferable to select a material whose thermal expansion coefficient is not significantly large.
  • the thermal expansion coefficient can be suppressed by mixing the inorganic filler into the resin film.
  • the inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, or silicon oxide.
  • the sheet substrate P may be a single-layer body of ultra-thin glass with a thickness of about 100 ⁇ m manufactured by the float method or the like, and the ultra-thin glass may be laminated with the above-described resin film or foil. It may be the body.
  • CNF sheet substrates films with a thickness of several hundred ⁇ m or less containing cellulose nanofibers (hereinafter, also referred to as CNF sheet substrates) withstand processing at high temperatures (eg, about 200 ° C.) compared to films such as PET,
  • the coefficient of linear thermal expansion can be made comparable to that of copper or aluminum by increasing the content of CNF. Therefore, the CNF sheet substrate forms a copper wiring pattern to mount electronic components (semiconductor elements, resistors, capacitors, etc.) or directly forms thin film transistors (TFTs) that require high-temperature processing. It is also suitable as a substrate in the manufacture of flexible electronic devices.
  • the flexibility of the sheet substrate P means that the sheet substrate P is not sheared or broken even if a force of about its own weight is applied, and the sheet substrate P can be bent. I say the nature.
  • the property of being bent by the force of its own weight is also included in the flexibility.
  • the degree of flexibility changes depending on the material, size, and thickness of the sheet substrate P, the layer structure formed on the substrate P, the environment such as temperature or humidity, and the like. In any case, when the sheet substrate P is properly wound around members for changing the transport direction such as various transport rollers, rotating drums, etc. provided in the transport path in the device manufacturing system (pattern drawing apparatus EX), buckling occurs.
  • a photosensitive functional layer (photosensitive layer) is formed on the surface of the sheet substrate P sent to the pattern drawing apparatus EX by the processing of the previous step.
  • the photosensitive functional layer is applied as a solution on the substrate P and dried to form a layer (film).
  • a typical photosensitive functional layer is a photoresist (liquid or dry film), but as a material that does not require development processing, the photosensitive property is such that the lyophobic property of the portion irradiated with ultraviolet light is modified
  • a silane coupling agent (SAM) or a positive type in which a plating reducing group is exposed to ultraviolet radiation, or a negative type photosensitive reducing agent that offsets the plating reduction ability of a portion irradiated with ultraviolet radiation is there.
  • a photosensitive silane coupling agent is used as the photosensitive functional layer
  • the pattern portion exposed to ultraviolet light on the sheet substrate P is reformed from lyophobic to lyophilic. Therefore, a thin film transistor (TFT) or the like can be obtained by selectively applying a conductive ink (ink containing conductive nanoparticles such as silver or copper) or a liquid containing a semiconductor material onto the lyophilic portion.
  • a conductive ink ink containing conductive nanoparticles such as silver or copper
  • a liquid containing a semiconductor material onto the lyophilic portion.
  • the photosensitive functional layer may be other layer, for example, a layer obtained by applying a UV curable resin in a thin film, as long as it has sensitivity in the ultraviolet wavelength range (about 250 to 400 nm).
  • the plating reducing group is exposed on the pattern portion exposed to the ultraviolet light on the sheet substrate P. Therefore, the pattern layer of palladium is formed (deposited) by immersing the sheet substrate P immediately in the electroless plating solution containing palladium ions or the like for a certain period of time after the exposure.
  • a plating process is an additive process, it may be presupposed that it is an etching process as a subtractive process.
  • the sheet substrate P to be sent to the pattern drawing apparatus EX uses PET or PEN as a base material, and metallic thin films such as aluminum (Al) and copper (Cu) are entirely or selectively vapor deposited It is preferable that a photoresist layer be laminated thereon.
  • the pattern drawing apparatus EX transports the sheet substrate P transferred from the process device of the previous process toward the process device (including a single processing unit or a plurality of processing units) of the subsequent process at a predetermined speed. Exposure processing (pattern drawing) is performed on the sheet substrate P.
  • the pattern drawing apparatus EX is a pattern for an electronic device (for example, a wiring pattern constituting an electronic device, a pattern of an electrode or wiring of a TFT, etc.) on the surface of the sheet substrate P (the surface of the photosensitive functional layer, ie, the photosensitive surface) Irradiate a light pattern according to. As a result, latent images (modified portions) corresponding to various patterns are formed on the photosensitive functional layer.
  • the pattern drawing apparatus EX in the present embodiment is a direct drawing exposure apparatus that does not use a mask, that is, a so-called spot scanning exposure apparatus.
  • the drawing apparatus EX includes a rotating drum DR (substrate moving member) for supporting the substrate P in a cylindrical shape and transporting the substrate P in the longitudinal direction for sub-scanning, and a substrate P supported in a cylindrical shape by the rotating drum DR.
  • a plurality of (here, six) drawing units Un (U1 to U6) that perform pattern exposure for each portion are provided, and each of the plurality of drawing units Un (U1 to U6) is for exposure emitted from the light source device LS
  • the spot beam of the pulsed beam LB (pulse beam) is a polygon mirror (scanning) in a predetermined scanning direction (Y direction) on the irradiated surface (photosensitive surface) of the sheet substrate P (hereinafter, also simply referred to as the substrate P). Member) While scanning (main scanning) one-dimensionally with PM, the intensity of spot light is modulated (on / off) at high speed according to pattern data (drawing data, pattern information).
  • a light pattern corresponding to a predetermined pattern such as an electronic device, a circuit or a wiring is drawn and exposed on the surface to be irradiated of the substrate P. That is, the spot light is relatively two-dimensionally scanned on the surface to be irradiated of the substrate P (the surface of the photosensitive functional layer) by the conveyance (sub scanning) of the substrate P in the longitudinal direction and the main scan of the spot light.
  • a predetermined pattern is drawn and exposed on the surface to be irradiated of the substrate P.
  • the exposed region in which the pattern is drawn by the drawing device EX is predetermined along the longitudinal direction of the substrate P A plurality of intervals will be provided. Since the electronic device is formed in the area to be exposed, the area to be exposed is also a device formation area.
  • the rotary drum DR has a central axis AXo extending in the Y direction and intersecting the direction in which gravity acts, and a cylindrical outer peripheral surface having a constant radius from the central axis AXo.
  • a shaft is provided coaxially with the central axis AXo at both ends in the Y direction of the rotary drum DR, and the rotary drum DR is axially supported by the shaft on a support member (body frame portion) in the drawing apparatus EX via a bearing. .
  • the shaft is coaxially coupled to a rotation shaft of a motor or the like.
  • the rotating drum DR rotates around a central axis AXo while supporting (while winding) a part of the substrate P in a cylindrical direction in a longitudinal direction according to the outer peripheral surface (circumferential surface).
  • the substrate P is transported in the long direction.
  • the rotary drum DR is a drawing area (portion including drawing lines SL1 to SL6 by spot light) on the substrate P on which the scanning beam (spot light) from each of the plurality of drawing units Un (U1 to U6) is projected. Support on the outer peripheral surface.
  • the rotary drum DR closely supports the substrate P on the side (back side) opposite to the side (photosensitive surface) on which the electronic device is formed.
  • the light source device (pulsed light source device) LS generates and emits a pulsed beam (pulsed beam, pulsed light, laser) LB.
  • the beam LB is ultraviolet light having a peak wavelength in any of the ultraviolet wavelength band of about 240 to 400 nm, a wavelength width of about several tens of pm, and sensitivity to the photosensitive layer of the sheet substrate P.
  • the light source device LS emits a beam LB which emits light in a pulse form at a frequency (oscillation frequency, predetermined frequency) Fa under the control of a drawing control device 200 (see FIG. 6 later) not shown here.
  • the light source device LS includes a semiconductor laser element that generates pulsed seed light in an infrared wavelength range, a fiber amplifier, and a wavelength that converts amplified infrared seed light into an ultraviolet wavelength of 355 nm.
  • the fiber amplifier laser light source is configured of a conversion element (harmonic generation element) or the like. By configuring the light source device LS in this manner, it is possible to obtain pulsed light of high-intensity ultraviolet light with an oscillation frequency Fa of several hundreds of megahertz and a light emission time of one pulse of several tens of picoseconds or less.
  • the beam LB emitted from the light source device LS is assumed to be a narrow parallel luminous flux having a beam diameter of about 1 mm or less.
  • the light source device LS is a fiber amplifier laser light source, and the state of the seed light in the infrared wavelength region incident on the fiber amplifier is changed according to the state ("0" or "1" in logical value) of pixels constituting drawing data.
  • a configuration for causing the pulse generation of the beam LB to be turned on / off at a high speed is disclosed, for example, in WO 2015 / 166,910.
  • the beam LB emitted from the light source device LS includes a selection optical element OSn (OS1 to OS6) as a plurality of switching elements, a plurality of reflection mirrors M1 to M12, and a plurality of selection mirrors IMn (IM1 to IM6). It is supplied selectively (alternatively) to each of the drawing units Un (U1 to U6) via a beam switching unit configured of an absorber TR or the like.
  • the selection optical elements OSn (OS1 to OS6) have transparency to the beam LB, and are driven by an ultrasonic signal (RF power) to generate first-order diffracted light (main diffracted beam) of the incident beam LB.
  • An acousto-optic modulator or an acousto-optic deflector (AOM: Acousto-Optic Modulator) which deflects at a predetermined angle and emits as a beam LBn for drawing.
  • the plurality of selection optical elements OSn and the plurality of selection mirrors IMn are provided corresponding to each of the plurality of drawing units Un.
  • the selection optical element OS1 and the selection mirror IM1 are provided corresponding to the drawing unit U1
  • the selection optical elements OS2 to OS6 and the selection mirrors IM2 to IM6 correspond to the drawing units U2 to U6, respectively. Is provided.
  • the light beam from the light source device LS is bent in a meandering manner in a plane parallel to the XY plane by the reflection mirrors M1 to M12, and the selection optical elements OS5, OS6, OS3, OS4, OS1, OS2 are in this order It permeate
  • the selection optical elements OSn OS1 to OS6 are in the off state (the non-operation state in which the first order diffracted light is not generated without the application of the ultrasonic wave signal) will be described in detail.
  • a plurality of lenses are provided in the beam light path from the reflection mirror M1 to the absorber TR, and the plurality of lenses converge the beam LB from the parallel light beam. Or return the diverging beam LB after convergence to a parallel beam.
  • the configuration will be described later with reference to FIG.
  • the beam LB from the light source device LS travels in the ⁇ X direction parallel to the X axis and is incident on the reflection mirror M1.
  • the beam LB reflected in the -Y direction by the reflection mirror M1 is incident on the reflection mirror M2.
  • the beam LB reflected in the + X direction by the reflection mirror M2 linearly passes through the selection optical element OS5 and reaches the reflection mirror M3.
  • the beam LB reflected in the -Y direction by the reflection mirror M3 is incident on the reflection mirror M4.
  • the beam LB reflected in the ⁇ X direction by the reflection mirror M 4 linearly passes through the selection optical element OS 6 and reaches the reflection mirror M 5.
  • the beam LB reflected in the -Y direction by the reflection mirror M5 is incident on the reflection mirror M6.
  • the beam LB reflected in the + X direction by the reflection mirror M6 linearly passes through the selection optical element OS3 and reaches the reflection mirror M7.
  • the beam LB reflected in the -Y direction by the reflection mirror M7 is incident on the reflection mirror M8.
  • the beam LB reflected in the ⁇ X direction by the reflection mirror M8 linearly passes through the selection optical element OS4 and reaches the reflection mirror M9.
  • the beam LB reflected in the -Y direction by the reflection mirror M9 is incident on the reflection mirror M10.
  • the beam LB reflected in the + X direction by the reflection mirror M10 linearly passes through the selection optical element OS1 and reaches the reflection mirror M11.
  • the beam LB reflected in the -Y direction by the reflection mirror M11 is incident on the reflection mirror M12.
  • the beam LB reflected in the ⁇ X direction by the reflection mirror M12 is linearly transmitted through the selection optical element OS2 and guided to the absorber TR.
  • the absorber TR leaks the high-intensity beam LB from the light source device LS which is transmitted with almost no attenuation when all of the selection optical elements OSn (OS1 to OS6) are off. It is a light trap to prevent.
  • each of the selection optical elements OSn When an ultrasonic signal (high frequency signal) is applied, each of the selection optical elements OSn has a predetermined frequency (specified frequency, center) in the high frequency band (40 to 200 MHz) of the incident beam (0th order light) LB.
  • the first-order diffracted light (main diffracted beam) diffracted at the diffraction angle according to the frequency) is generated as an exit beam (beam LBn for drawing). Therefore, a beam emitted as first-order diffracted light from the selection optical element OS1 becomes LB1, and similarly, beams emitted as first-order diffracted light from each of the selection optical elements OS2 to OS6 become LB2 to LB6.
  • each of the selection optical elements OSn functions to deflect the light path of the beam LB from the light source device LS.
  • the optical element OSn for selection is the operating state in which the optical element for selection OSn (OS1 to OS6) is turned on and the beam LBn (LB1 to LB6) is generated as first-order diffracted light. Description will be made assuming that (OS1 to OS6) deflect (or select) the beam LB from the light source device LS. However, the actual acousto-optic modulator is deflected by each of the selection optical elements OSn because the maximum generation efficiency of the main diffracted beam is about 70 to 80% of the zero-order light when used under Bragg diffraction conditions.
  • the beams LBn (LB1 to LB6) are lower than the intensity of the original beam LB.
  • the drawing control device 200 (see FIG. 6) is set such that only one selected optical element for selection OSn (OS1 to OS6) is in the on state (deflection state) for a certain period of time. Controlled by).
  • OSn selected optical element for selection OSn
  • the on state deflection state
  • the absorber TR Absorbed by the absorber TR.
  • the prescribed frequency is a frequency for accurately operating the selection optical element OSn (OS1 to OS6) under the Bragg diffraction condition, and a change from the prescribed frequency of the high frequency signal (drive signal)
  • the (increase or decrease) purposely removes the precise Bragg diffraction condition to lower the generation efficiency (diffraction efficiency) of the main diffraction beam.
  • Each of the selection optical elements OSn is installed so as to deflect the drawing beam LBn (LB1 to LB6), which is the deflected first-order diffracted light, in the -Z direction with respect to the incident beam LB.
  • the beams LBn (LB1 to LB6) deflected by each of the selection optical elements OSn are projected onto selection mirrors IMn (IM1 to IM6) provided at positions separated by a predetermined distance from each of the selection optical elements OSn .
  • Each selection mirror IMn reflects the incident beam LBn (LB1 to LB6) in the ⁇ Z direction, and guides the beam LBn (LB1 to LB6) to the corresponding writing unit Un (U1 to U6).
  • each of the selection optical elements OSn is diffracted light (beam LBn) obtained by diffracting the incident beam LB according to on / off of a drive signal (ultrasonic signal) from the drawing control device 200 (see FIG. 6) Turn on / off the occurrence of
  • the selection optical element OS5 transmits the incident beam LB from the light source device LS without deflecting (diffracting) it when the driving signal (high frequency signal) is not applied and is in the OFF state. Therefore, the beam LB transmitted through the selection optical element OS5 is incident on the reflection mirror M3.
  • the selection optical element OS5 when the selection optical element OS5 is in the on state, the incident beam LB is deflected (diffracted) and directed to the selection mirror IM5. That is, the switching (beam selection) operation by the selection optical element OS5 is controlled by turning on / off the drive signal.
  • the switching operation of each of the selection optical elements OSn can guide the beam LB from the light source device LS to any one of the drawing units Un, and switch the drawing units Un on which the beam LBn is incident. Can.
  • the configuration is such that the plurality of selection optical elements OSn are arranged in series (serial) so that the beams LB from the light source device LS pass in order, and the beams LBn are supplied to the corresponding drawing units Un by time division.
  • the plurality of selection optical elements OSn are arranged in series (serial) so that the beams LB from the light source device LS pass in order, and the beams LBn are supplied to the corresponding drawing units Un by time division.
  • each of the selection optical elements OSn (OS1 to OS6) constituting the beam switching unit is in the ON state for a predetermined time is, for example, OS1 ⁇ OS2 ⁇ OS3 ⁇ OS4 ⁇ OS5 ⁇ OS6 ⁇ OS1 ⁇ ..., or , OS1 ⁇ OS3 ⁇ OS5 ⁇ OS2 ⁇ OS4 ⁇ OS6 ⁇ OS1 ⁇ ...
  • This order is determined by the order of the scanning start timing by the spot light set in each of the drawing units Un (U1 to U6).
  • one of the drawing units U1 to U6 is obtained by synchronizing the phase of the rotation angle with the synchronization of the rotation speed of the polygon mirror PM provided in each of the six drawing units U1 to U6.
  • One reflection surface of one polygon mirror can be switched in time division so as to perform one spot scan on the substrate P. Therefore, as long as the phase of the rotation angle of each polygon mirror PM of the drawing unit Un is synchronized in a predetermined relationship, the order of the spot scanning of the drawing unit Un may be arbitrary. In the configuration of FIG.
  • three drawing units U1, U3, U5 are arranged in the Y direction on the upstream side in the conveyance direction of the substrate P (the direction in which the outer peripheral surface of the rotary drum DR moves in the circumferential direction).
  • the three drawing units U2, U4, and U6 are arranged in the Y direction on the downstream side of the transport direction of the substrate P.
  • pattern drawing on the substrate P is started from the odd-numbered drawing units U1, U3, and U5 on the upstream side, and when the substrate P is sent for a fixed length, even-numbered drawing units U2, U4, and U6 on the downstream side. Since the pattern drawing is also started, the spot scanning order of the drawing unit Un can be set as U1 ⁇ U3 ⁇ U5 ⁇ U2 ⁇ U4 ⁇ U6 ⁇ U1 ⁇ ... Therefore, it is preferable to set the order in which each of the selection optical elements OSn (OS1 to OS6) is in the ON state only for a predetermined time, such as OS1 ⁇ OS3 ⁇ OS5 ⁇ OS2 ⁇ OS4 ⁇ OS6 ⁇ OS1 ⁇ .
  • the switching control of the selection optical element OSn on / off is based on the drawing data By doing this, the selection optical element OSn is forcibly maintained in the off state, and spot scanning by the drawing unit Un is not performed.
  • each of polygon mirrors PM for main scanning beams LB1 to LB6 incident on each of drawing units U1 to U6 precisely rotates at the same rotation speed while maintaining a constant rotation angle with each other. Synchronous control is performed to maintain the phase.
  • the timing (main scanning period of the spot light SP) of each of the beams LB1 to LB6 projected onto the substrate P from each of the drawing units U1 to U6 can be set so as not to overlap with each other. Therefore, the light source is controlled by controlling the on / off switching of each of the selection optical elements OSn (OS1 to OS6) provided in the beam switching unit in synchronization with the rotational angle position of each of the six polygon mirrors PM. Efficient exposure processing can be performed in which the beam LB from the apparatus LS is distributed to each of the plurality of drawing units Un by time division.
  • the drawing apparatus EX is a so-called multi-head direct drawing exposure apparatus in which a plurality of drawing units Un (U1 to U6) having the same configuration are arranged.
  • Each of the drawing units Un draws a pattern for each partial area of the substrate P supported by the outer peripheral surface (circumferential surface) of the rotary drum DR, which is divided in the Y direction.
  • Each of the drawing units Un (U1 to U6) condenses (converges) the beam LBn on the substrate P while projecting the beam LBn from the beam switching unit onto the substrate P (on the irradiated surface of the substrate P). Thereby, the beams LBn (LB1 to LB6) projected onto the substrate P become spot lights.
  • the spot light of the beams LBn (LB1 to LB6) projected onto the substrate P is scanned in the main scanning direction (Y direction) by the rotation of the polygon mirror PM of each drawing unit Un.
  • the drawing line SLn is also a scanning locus on the substrate P of the spot light of the beam LBn.
  • the drawing unit U1 scans the spot light along the drawing line SL1, and similarly, the drawing units U2 to U6 scan the spot light along the drawing lines SL2 to SL6.
  • the drawing lines SLn (SL1 to SL6) of the plurality of drawing units Un (U1 to U6) rotate with the central plane pcc including the central axis AXo of the rotary drum DR and parallel to the YZ plane. They are arranged in a staggered arrangement in two rows in the circumferential direction of the drum DR.
  • the odd-numbered drawing lines SL1, SL3, and SL5 are located on the irradiated surface of the substrate P on the upstream side ( ⁇ X direction side) in the transport direction of the substrate P with respect to the central plane pcc, and along the Y direction. It is arranged in one row at a predetermined interval.
  • the even-numbered drawing lines SL2, SL4, and SL6 are positioned on the irradiated surface of the substrate P on the downstream side (+ X direction side) of the transport direction of the substrate P with respect to the central plane and along the Y direction. They are arranged in a row, separated by an interval of.
  • the plurality of drawing units Un (U1 to U6) are also arranged in a staggered arrangement in two rows in the transport direction of the substrate P across the central plane pcc, and odd-numbered drawing units U1, U3, U5, and even-numbered ones.
  • the drawing units U2, U4, and U6 are provided in rotational symmetry about line segments parallel to the Z-axis included in the central plane pcc.
  • the odd-numbered drawing lines SL1, SL3 and SL5 and the even-numbered drawing lines SL2, SL4 and SL6 are separated from each other, but the Y direction ( With respect to the width direction of the substrate P and the main scanning direction, the drawing start point and the drawing end point are set so as to be joined without being separated in the Y direction.
  • the drawing lines SL1 to SL6 are substantially parallel to the width direction of the substrate P, that is, to the central axis AXo of the rotary drum DR.
  • joining the drawing lines SLn in the Y direction means that the end of the drawing lines SLn is such that the pattern drawn by each of the drawing lines SLn adjacent in the Y direction is joined on the substrate P in the Y direction. This means that the positions in the Y direction of each other are adjacent or partially overlapped.
  • the plurality of drawing units Un cover the dimension in the width direction of the exposure area (pattern formation area) on the substrate P in total in the Y-direction scanning area (the main scanning area Division).
  • drawing can be performed by arranging a total of six drawing units U1 to U6 in the Y direction.
  • the width of the exposure area (pattern formation area) in the Y direction can be expanded to about 180 to 360 mm.
  • the length (length of the drawing range) of each drawing line SLn (SL1 to SL6) is basically the same. That is, the scanning distance of the spot light of the beam LBn scanned along each of the drawing lines SL1 to SL6 is also basically the same.
  • the beam LB from the light source device LS is pulsed light with an emission time of several tens of picoseconds or less
  • the spot light projected onto the drawing line SLn during the main scan is the beam LB It becomes discrete according to the oscillation frequency Fa of (for example, 400 MHz). Therefore, it is necessary to cause the spot light projected by one pulse light of the beam LB and the spot light projected by the next one pulse light to overlap in the main scanning direction.
  • the amount of overlap is set by the effective size ⁇ of the spot light, the scanning speed of the spot light (the speed of the main scanning) Vs, and the oscillation frequency Fa of the beam LB.
  • the effective size (diameter) ⁇ of the spot light is 1 / e 2 (or half of the full width at half maximum) of the peak intensity of the spot light when the intensity distribution of the spot light is approximated by a Gaussian distribution Determined by the width dimension.
  • the scanning speed Vs rotational speed of the polygon mirror PM
  • oscillation of the spot light so that the spot light overlaps by about ⁇ ⁇ 1/2 with respect to the effective size (size) ⁇
  • the frequency Fa is set. Therefore, the projection interval along the main scanning direction of the pulsed spot light is ⁇ / 2.
  • the substrate P has an effective size of the spot light between one scan of the spot light along the drawing line SLn and the next scan. It is desirable to set so as to move by a distance of approximately 1 ⁇ 2 of ⁇ . Furthermore, also in the case where the drawing lines SLn adjacent in the Y direction are continued in the main scanning direction, it is preferable to overlap by ⁇ / 2.
  • the effective size (size) ⁇ of the spot light on the substrate P is set to 2 to 3 ⁇ m, which is approximately the same as the size of one pixel (2 ⁇ m ⁇ 2 ⁇ m square) set on the drawing data. .
  • Each drawing unit Un (U1 to U6) is set such that each beam LBn travels toward the central axis AXo of the rotary drum DR when viewed in the XZ plane.
  • the optical path (beam principal ray) of the beam LBn traveling from each of the drawing units Un (U1 to U6) toward the substrate P is the normal to the surface to be illuminated (strictly, tangent plane) of the substrate P in the XZ plane.
  • the beams LBn irradiated from the drawing units Un (U1 to U6) to the drawing lines SLn (SL1 to SL6) are in contact with the tangent plane of the surface of the substrate P curved in a cylindrical surface at the drawing lines SLn. It is projected toward the substrate P so as to be always vertical. That is, in the main scanning direction of the spot light, the beams LBn (LB1 to LB6) projected onto the substrate P are scanned in a telecentric manner.
  • the drawing unit U1 at least includes reflection mirrors M20 to M24, a polygon mirror PM, and an f ⁇ lens system (scanning lens for drawing) FT.
  • a cylindrical lens is provided on the front side of the polygon mirror PM and the rear side of the f.theta. Lens system (f-.theta. Lens system) FT when viewed from the traveling direction of the beam LB1.
  • the positional variation in the sub-scanning direction of the spot light (drawing line SL1) due to the tilt error of each reflective surface RP is corrected.
  • the beam LB1 reflected in the -Z direction by the selection mirror IM1 is incident on the reflection mirror M20 provided in the drawing unit U1, and the beam LB1 reflected by the reflection mirror M20 is advanced in the -X direction and is incident on the reflection mirror M21 Do.
  • the beam LB1 reflected in the -Z direction by the reflection mirror M21 enters the reflection mirror M22, and the beam LB1 reflected in the reflection mirror M22 travels in the + X direction and enters the reflection mirror M23.
  • the reflection mirror M23 bends the beam LB1 in a plane parallel to the XY plane so that the incident beam LB1 is directed to the reflection surface RP of the polygon mirror PM.
  • the polygon mirror PM reflects the incident beam LB1 toward the f ⁇ lens system FT to the + X direction side.
  • the polygon mirror PM deflects (reflects) the incident beam LB1 in a plane parallel to the XY plane in order to scan the spot light of the beam LB1 on the illuminated surface of the substrate P.
  • the polygon mirror (rotation polygon mirror, scanning member) PM has a rotation axis AXp extending in the Z-axis direction and a plurality of reflecting surfaces RP formed parallel to the rotation axis AXp around the rotation axis AXp (this In the embodiment, it is a rotating polygon mirror having the number Np of reflective surfaces RP as eight.
  • the polygon mirror PM By rotating the polygon mirror PM in a predetermined rotation direction about the rotation axis AXp, it is possible to continuously change the reflection angle of the pulsed beam LB1 irradiated on the reflection surface. As a result, the beam LB1 is deflected by one reflection surface RP, and the spot light of the beam LB1 irradiated onto the illuminated surface of the substrate P is scanned along the main scanning direction (the width direction of the substrate P, Y direction). be able to. For this reason, in one rotation of the polygon mirror PM, the number of times of scanning of the spot light along the drawing line SL1 on the irradiated surface of the substrate P is eight times, the same as the number of the reflecting surfaces RP. When the reflective surface of the polygon mirror PM is used one-off, spot light is scanned four times on the surface to be illuminated of the substrate P by one rotation of the polygon mirror PM.
  • Lens system (scanning system lens, scanning optical system) FT is a telecentric scanning lens that projects the beam LB1 reflected by the polygon mirror PM onto the reflecting mirror M24.
  • the lens LB1 transmitted through the f ⁇ lens system FT is focused on the substrate P as spot light through the reflection mirror M24 (and the cylindrical lens).
  • the reflection mirror M24 reflects the beam LB1 toward the substrate P so that the beam LB1 travels toward the central axis AXo of the rotary drum DR with respect to the XZ plane.
  • the incident angle ⁇ of the beam LB1 on the f ⁇ lens system FT (the declination angle from the optical axis of the f ⁇ lens system FT) changes in accordance with the rotation angle ( ⁇ / 2) of the polygon mirror PM.
  • this f ⁇ lens system FT makes it possible to accurately scan the beam LB1 in the Y direction at a constant velocity.
  • the plane (parallel to the XY plane) on which the beam LB1 incident on the f ⁇ lens system FT is deflected one-dimensionally by the polygon mirror PM is a plane including the optical axis of the f ⁇ lens system FT.
  • the reflection mirror M24 and the second cylindrical lens CYb are integrally provided in the unit frame.
  • the unit frame is configured to be independently removable from the apparatus body.
  • the two lens systems Gu1 and Gu2 in the optical path of the beam LBn reflected by the reflection mirror M20 in the -X direction and directed to the reflection mirror M20a are several mm in diameter of the cross section of the incident beam LBn (diameter is 1 mm or less) It is configured as a beam expander system that converts it into a parallel beam expanded to about 8 mm as an example.
  • the beam LBn expanded by the beam expander system is reflected by the reflection mirror M20a in the -Y direction, and then enters the polarization beam splitter BS1.
  • the beam LBn is set to be linearly polarized light so as to be efficiently reflected by the polarization beam splitter BS1 in the ⁇ X direction.
  • a quarter wavelength plate is provided on the surface of the polarization beam splitter BS1 on the aperture stop NPA side.
  • Beam LBn (circularly polarized light) reflected by polarization beam splitter BS1 is cut at the periphery (for example, an intensity portion of 1 / e 2 or less of the foot) on the intensity profile of beam LB1 by aperture stop NPA having a circular aperture Ru.
  • the beam LBn transmitted through the aperture stop NPA and reflected in the ⁇ Z direction by the reflection mirror M21 is incident on the first cylindrical lens CYa.
  • an origin sensor (origin point that detects the angular position of each reflecting surface RP of the polygon mirror PM
  • a beam transmitting system 60a as a detector) and a beam receiving system 60b are provided.
  • a lens system Gu4 and a photodetector (photoelectric sensor) DTo for detection are provided.
  • the photoelectric sensor DTo a PIN photodiode, an avalanche photodiode (APD), a metal-semiconductor-metal (MSM) photodiode or the like can be used.
  • the beam LBn incident on the drawing unit Un travels in the ⁇ Z direction along an axis Le parallel to the Z axis, and is incident on the reflecting mirror M20 inclined 45 ° with respect to the XY plane.
  • the beam LBn reflected by the reflection mirror M20 travels as a parallel light beam from the reflection mirror M20 through the lens system Gu1, the parallel flat plate HVP, and the lens system Gu2 toward the reflection mirror M20a separated in the ⁇ X direction.
  • the reflection mirror M20a is disposed at an angle of 45 ° with respect to the YZ plane, and reflects the incident beam LBn toward the polarization beam splitter BS1 in the -Y direction.
  • the polarization separation surface of the polarization beam splitter BS1 is disposed at an angle of 45 ° with respect to the YZ plane, reflects a P-polarized beam, and transmits a linearly polarized (S-polarized) beam polarized in a direction orthogonal to the P polarization.
  • the polarization beam splitter BS1 reflects the beam LBn from the reflection mirror M20a in the ⁇ X direction and guides it to the reflection mirror M21 through the aperture stop NPA.
  • the reflection mirror M21 is disposed at an angle of 45 ° with respect to the XY plane, and reflects the incident beam LBn toward the reflection mirror M22 so as to pass through the first cylindrical lens CYa in the ⁇ Z direction.
  • the reflection mirror M22 is disposed at an angle of 45 ° with respect to the XY plane, and reflects the incident beam LBn toward the reflection mirror M23 in the + X direction so as to pass through the lens system Gu3.
  • the reflection mirror M23 reflects the incident beam LB1 toward the polygon mirror PM.
  • the first cylindrical lens CYa has a refractive power that converges the beam LBn in the Y direction (main scanning direction) in FIG. 2, and does not have a refractive power in the X direction (sub scanning direction).
  • the beam LBn irradiated onto the reflecting surface RP of the polygon mirror PM is in the main scanning direction (the beam by the polygon mirror PM In the deflection direction, the light beam is converted into a parallel state, and in the sub-scanning direction (direction of the rotation axis AXp of the polygon mirror PM), the light beam is converted into a convergent state that extends like a slit and collects light.
  • the polygon mirror PM reflects the incident beam LB1 toward the + X direction side toward the f ⁇ lens system FT having an optical axis AXf parallel to the X axis.
  • the polygon mirror PM deflects (reflects) the incident beam LB1 one-dimensionally in a plane parallel to the XY plane in order to scan the spot light beam SP of the beam LB1 on the illuminated surface of the substrate P.
  • the polygon mirror PM has a plurality of reflecting surfaces (each side of a regular octagon in the present embodiment) formed around a rotation axis AXp extending in the Z-axis direction, and is rotated by a rotation motor RM coaxial with the rotation axis AXp. Be done.
  • the rotation motor RM is rotated at a designated rotation speed (for example, about 30,000 to 40,000 rpm) by the drawing control device 200 (see FIG. 6).
  • the effective length (for example, 50 mm) of the drawing lines SLn is the maximum scanning length (for example, 52 mm) with which the spot light SP can be scanned by this polygon mirror PM.
  • the length is set as follows, and in the initial setting (in design), the central point of the drawing line SLn (the point through which the optical axis AXf of the f ⁇ lens system FT passes) is set at the center of the maximum scanning length.
  • the beam LBn converges in a slit shape (long oval shape) extending in a direction parallel to the XY plane on the reflecting surface of the polygon mirror PM.
  • the substrate It is possible to suppress the displacement of the irradiation position of the beam LB1 (drawing line SL1) irradiated onto the P irradiated surface in the sub-scanning direction.
  • the angle of incidence ⁇ (angle relative to the optical axis AXf) of the beam LBn on the f ⁇ lens system FT varies according to the rotation angle ( ⁇ / 2) of the polygon mirror PM.
  • the incident angle ⁇ of the beam LBn on the f ⁇ lens system FT is 0 °
  • the beam LBn incident on the f ⁇ lens system FT travels along the optical axis AXf.
  • the lens LB from the f ⁇ lens system FT is reflected by the reflection mirror M24 in the -Z direction, and is projected toward the substrate P through the second cylindrical lens CYb.
  • the light is converged to a minute spot light SP with a diameter of several ⁇ m (eg, 2 to 3 ⁇ m) on the irradiated surface.
  • the beam LBn incident on the drawing unit Un is bent along the optical path cranked in a U-shape from the reflection mirror M20 to the substrate P, and advances in the -Z direction. Projected to P.
  • the axis Le shown in FIG. 2 is an extension of the center line of the beam LBn incident on the reflection mirror M20.
  • the axis Le is a light of the f ⁇ lens system FT bent in the ⁇ Z direction by the reflection mirror M24. It is arranged to be coaxial with the axis AXf.
  • the entire drawing unit Un (a unit frame integrally holding the members from the reflection mirror M20 to the second cylindrical lens CYb) can be slightly rotated around the axis Le, and the drawing line The minute inclination of SLn in the XY plane can be adjusted with high accuracy.
  • the above-described drawing unit Un is configured the same for each of the drawing units U1 to U6.
  • each of the six drawing units U1 to U6 scans the spot lights SP of the beams LB1 to LB6 in one dimension in the main scanning direction (Y direction).
  • the surface to be irradiated of the substrate P is relatively two-dimensionally scanned by the spot light SP, and the substrate P is exposed in a state in which the patterns drawn by the drawing lines SL1 to SL6 are joined in the Y direction.
  • Each of the reflection mirrors M20 to M24 in the drawing unit Un is constituted by a surface reflection type laser mirror having a slight transmittance (for example, 1% or less) at the wavelength (for example, 355 nm) of the drawing beam LBn. Ru.
  • the effective scanning length LT of the drawing lines SLn is 50 mm
  • the effective diameter ⁇ of the spot light SP is 4 ⁇ m
  • the oscillation frequency Fa of pulsed light emission of the beam LB from the light source LS is 400 MHz.
  • the polygon mirror PM of the eight surface is The rotational speed VR may be set to 36000 rpm.
  • two pulses of the beam LBn are overlapped by 1 ⁇ 2 of the diameter ⁇ of the spot light SP in each of the main scanning direction and the sub scanning direction to form one pixel.
  • the rotational angle position of the reflecting surface RP of the polygon mirror PM can start scanning of the spot light SP of the drawing beam LBn by the reflecting surface RP.
  • An origin signal also referred to as a synchronization signal or timing signal
  • SZn whose waveform changes at an instant when it reaches a predetermined position (a prescribed angular position, an origin angular position) immediately before the Since the polygon mirror PM has eight reflection surfaces RP, the beam receiving system 60b outputs eight origin signals SZn (eight waveform changes) during one rotation of the polygon mirror PM.
  • the origin signal SZn is sent to the drawing control device 200, and after a predetermined delay time has elapsed since the generation of the origin signal SZn, drawing along the drawing line SLn of the spot light SP is started.
  • the origin signal SZn is output as origin signals SZ1 to SZ6 from the beam receiving system 60b provided in each of the six drawing units U1 to U6.
  • the parallel flat plate HVP disposed in the beam expander system by the lens systems Gu1 and Gu2 in FIG. 2 is configured to be tiltable around the rotation axis parallel to the Y axis (main scanning direction) in FIG.
  • the drawing line SLn which is a scanning locus of the spot light SP scanned on the substrate P, is slightly small in the sub scanning direction (for example, several times the effective size ⁇ of the spot light SP) Can be shifted by about a factor of ten.
  • the lens system Gu1 converges the incident beam LBn (collimated light flux) so as to be a beam waist at a position in front of the parallel flat plate HVP, and then diverges in a diverging state to the lens system Gu2 through the parallel flat plate HVP. Let it strike.
  • the lens system Gu2 converts the diverging and incident beam LBn into, for example, a parallel beam having a diameter of about 8 mm.
  • the aperture stop NPA disposed after the polarization beam splitter BS1 is disposed at the back focal length of the lens system Gu2 (beam expander system).
  • the aperture stop NPA is set to be in an optically conjugate relationship with the reflecting surface RP of the polygon mirror PM in the main scanning direction by the cylindrical lens CYa and the lens system Gu3.
  • the aperture stop NPA and the reflecting surface RP of the polygon mirror PM have a relationship between the pupil and the image plane by the combined optical system of the cylindrical lens CYa and the lens system Gu3.
  • the reflecting surface RP of the polygon mirror PM corresponds to an image plane where the beam LBn converges as a beam waist in the sub scanning direction.
  • the beam LBn incident on the lens system Gu2 is in the Z direction in FIG.
  • the beam LBn (parallel light flux) incident on the aperture stop NPA is slightly inclined in the sub scanning direction with respect to the optical axis and passes through the circular aperture of the aperture stop NPA.
  • the aperture stop NPA is disposed at the back focal length of the lens system Gu2 (beam expander system), the irradiation position of the beam LBn on the aperture stop NPA is not displaced.
  • the beam LBn which is slightly inclined with respect to the optical axis and transmitted through the aperture stop NPA converges in the sub scanning direction on the reflecting surface RP of the polygon mirror PM, but the converging position is the sub scanning direction (rotation axis of polygon mirror PM Slightly displaced in the direction of AXp).
  • the reflecting surface RP of the polygon mirror PM and the surface of the substrate P have a conjugate (imaging) relationship by the combined optical system of the f ⁇ lens system FT and the cylindrical lens CYb in the sub scanning direction, so the parallel plate HVP is neutral
  • the spot light SP projected onto the substrate P shifts in the sub-scanning direction according to the amount of tilt.
  • FIG. 3 is a diagram showing a specific configuration around the selection optical elements OSn (OS1 to OS6) and the selection mirrors IMn (IM1 to IM6), but in order to simplify the description, it is shown in FIG.
  • the beam LB emitted from the light source device LS is incident on the selection optical element OS1 as a parallel light flux of a minute diameter (first diameter) of, for example, 1 mm or less in diameter so as to satisfy the Bragg diffraction condition.
  • first diameter minute diameter
  • the incident beam LB is transmitted without being diffracted by the selection optical element OS1.
  • the transmitted beam LB passes through the condenser lens Ga and the collimator lens Gb provided along the optical axis AXa on the optical path, and is incident on the selection optical element OS2 in the subsequent stage.
  • the beam LB passing through the condenser lens Ga and the collimator lens Gb through the selection optical element OS1 is coaxial with the optical axis AXa.
  • the condenser lens Ga condenses the beam LB (parallel luminous flux) transmitted through the selection optical element OS1 so as to form a beam waist at the position of the surface Ps located between the condenser lens Ga and the collimator lens Gb. .
  • the collimating lens Gb collimates the beam LB diverging from the position of the plane Ps.
  • the diameter of the beam LB collimated by the collimating lens Gb is the first diameter.
  • the back focal position of the condenser lens Ga and the front focal position of the collimating lens Gb coincide with the surface Ps within a predetermined allowable range
  • the front focal position of the condenser lens Ga is an optical element for selection It is arranged to coincide with the diffraction point in OS1 within a predetermined tolerance
  • the back focal position of collimating lens Gb is arranged to coincide within the predetermined tolerance with the diffraction point in optical element OS2 for selection Ru. Therefore, the condensing lens Ga and the collimating lens Gb optically compare the diffraction point (beam deflection area) in the selection optical element OS1 and the diffraction point (beam deflection area) in the next stage selection optical element OS2. It functions as an equal-magnification relay optical system (inverted imaging system) that is Therefore, the pupil plane of the relay optical system (lenses Ga and Gb) is formed at the position of the plane Ps.
  • the beam LB incident under the condition of Bragg diffraction is the beam LB1 diffracted by the selection optical element OS1 (first order diffracted light, main diffracted beam And the zeroth-order beam LB1z which has not been diffracted.
  • the incident angle of the beam LB on the selection optical element OS1 of the beam LB is set so as to satisfy the condition of Bragg diffraction, only the positive first-order diffracted beam LB1 with a positive diffraction angle is generated strongly with respect to the zeroth-order beam LB1z.
  • the negative first-order diffracted beam (LB1 '), the other second-order diffracted beam, etc. are hardly generated theoretically. Therefore, when the condition of Bragg diffraction is satisfied, the intensity of the incident beam LB is 100%, and the intensity of the diffracted beam LB1 is at most 70 to 80 when neglecting the decrease due to the transmittance of the selection optical element OS1. %, And the remaining 30 to 20% is the intensity of the zeroth-order beam LB1z.
  • the zeroth-order beam LB1z passes through the relay optical system including the condenser lens Ga and the collimator lens Gb, passes through the selection optical element OS2 in the subsequent stage, and is absorbed by the absorber TR.
  • the main diffracted beam LB1 (parallel beam) deflected in the -Z direction at a diffraction angle according to the frequency of the high frequency drive signal DF1 passes through the condenser lens Ga and is transmitted to the selection mirror IM1 provided on the surface Ps Head. Since the front focal position of the focusing lens Ga is optically conjugate to the diffraction point in the selection optical element OS1, the beam LB1 directed from the focusing lens Ga to the selection mirror IM1 is a light at a position decentered from the optical axis AXa It travels parallel to the axis AXa and is focused (converged) to a beam waist at the position of the plane Ps. The position of the beam waist is set to be optically conjugate to the spot light SP projected onto the substrate P via the drawing unit U1.
  • the main diffraction beam LB1 for drawing deflected (diffracted) by the selection optical element OS1 is reflected in the ⁇ Z direction by the selection mirror IM1 by arranging the reflection surface of the selection mirror IM1 at or near the position of the surface Ps.
  • the light beam enters the drawing unit U1 along the axis Le (see FIG. 2) through the aperture AP1 and the collimating lens Gc.
  • the collimator lens Gc turns the beam LB1 converged / diverged by the condenser lens Ga into a parallel light beam coaxial with the optical axis (axis line Le) of the collimator lens Gc.
  • the diameter of the beam LB1 that has been collimated by the collimating lens Gc is substantially the same as the first diameter.
  • the back focal point of the condenser lens Ga and the front focal point of the collimating lens Gc are disposed at or near the reflecting surface of the selection mirror IM1 within a predetermined tolerance.
  • the aperture AP1 blocks high-order diffracted beams (secondary light and the like) other than the main diffracted beam LB1 that can be reflected by the reflection surface of the selection mirror IM1.
  • the front focal position of the focusing lens Ga and the diffraction point in the selection optical element OS1 are optically conjugated, and the selection mirror IM1 is disposed on the surface Ps that is the back focal position of the focusing lens Ga. Then, it is possible to reliably select (switch) at a position where the beam LB1 (main diffracted beam) diffracted by the selection optical element OS1 is the beam waist.
  • an equal-magnification relay optical system (inverted image forming system) configured by a similar condensing lens Ga and a collimating lens Gb is provided.
  • the selection optical element OS1 is operated out of the ideal condition of Bragg diffraction, the theoretically generated -1st-order diffracted beam LB1 'which is not generated theoretically may be generated as leaked light.
  • the first-order diffracted beam LB1 ′ (parallel beam) is generated at a diffraction angle (deflection angle) symmetrical to the main diffracted beam LB1 with respect to the zeroth-order beam LB1z in the selection optical element OS1 and is incident on the focusing lens Ga Becomes beam waist in plane Ps and converges.
  • the focusing point of the ⁇ 1st order diffracted beam LB1 ′ is located symmetrically with the focusing point of the main diffracted beam LB1 across the focusing point of the 0th-order beam LB1z. Since the selection mirror IM1 reflects only the main diffraction beam LB1, the other 0th-order beams LB1z and -1st-order diffraction beams LB1 'are directly incident on the collimating lens Gb and are in the OFF state and are in the OFF state. It will be incident on the element OS2.
  • the first-order diffracted beam LB1 ' is transmitted through the selection optical element OS2 as it is, but the incident angle (emission angle) at that time is the diffraction angle when the selection optical element OS2 is turned on (the deflection angle It is equal to). Therefore, the ⁇ 1st order diffracted beam LB1 ′ (leakage light, stray light) transmitted through the selection optical element OS2 as it is is converged by the condenser lens Ga on the subsequent stage of the selection optical element OS2, and reflected by the subsequent selection mirror IM2. It will be incident on the subsequent drawing unit U2.
  • the selection optical element OS1 when the selection optical element OS1 is turned on and the drawing unit U1 draws a pattern by scanning the spot light SP, the ⁇ 1st order diffracted beam LB1 ′ (sub-diffraction beam, leaked light) intensity-modulated with the same drawing data ) Enters the drawing unit U2, and the spot light SP is scanned so as to draw a pattern (noise pattern) different from the original pattern on the drawing line SL2.
  • the intensity (light amount) of the first-order diffracted beam LB1 ′ is lower than the intensity of the original beam LB2 (+ 1st-order diffracted beam) scanned by the drawing unit U2, it is excessive to the photosensitive layer on the sheet substrate P In a state where an exposure amount of is given, that is, an exposed state by a noise pattern, the quality of the pattern finally drawn on the sheet substrate P may be greatly deteriorated. Therefore, in the present embodiment, as shown in FIG. 3, the -1st-order diffracted beam LB1 '(sub-diffraction beam to be noise light) generated by the selecting optical element OS1 is incident on the selecting optical element OS2 in the latter stage.
  • a knife edge shaped shielding plate (blocking optical member) IM1 ' is disposed in the vicinity of the position of the surface Ps.
  • the shield plate IM1 ' is arranged to be rotated by 180 ° around the optical axis AXa (a zeroth-order beam LB1z) with respect to the selection mirror IM1.
  • the shield plate IM1 ′ is a relay optical system between the selection optical element OS6 and the selection optical element OS3 in the relay optical system (lens system Ga, Gb) between the other selection optical element OS5 and the selection optical element OS6.
  • the relay optical system in the relay optical system (lens systems Ga and Gb) between the selection optical element OS3 and the selection optical element OS4, between the selection optical element OS4 and the selection optical element OS1
  • shielding plates IM5 ', IM6', IM3 ', IM4', IM2 ' also in each of the relay optical systems (lens systems Ga and Gb) and the position (pupil plane) after the selecting optical element OS2 Provided.
  • the first-order diffracted beams LB1 ′ to LB6 ′ generated as noise light from the selection optical elements OS1 to OS6 are collectively referred to as LBn ′ and the shielding plates IM1 ′ to IM6 ′ are collectively referred to as IMn ′.
  • the selection optical element OSn is bonded to a crystal (or quartz) AOG for diffracting the incident beam LB, and to one side of the crystal AOG, and is RF power (drive signal DFn) It comprises an ultrasonic transducer VD for generating a periodic refractive index distribution (transmission type phase diffraction grating) in the crystal AOG.
  • An axis orthogonal to the periodic direction of the lattice is Lga.
  • the angle ⁇ B which is a condition of Bragg diffraction is also called a Bragg angle. Therefore, the crystal AOG is formed such that the incident plane Pin and the exit plane Pout are parallel to each other and perpendicular to the beam LB which is not perpendicular to the axis Lga but incident at the Bragg angle ⁇ B. Thereby, the beam LB transmitted through the selection optical element OSn or the zeroth-order beam LBnz travels straight without being laterally shifted by the crystal AOG.
  • the frequency change of the RF power (drive signal DFn) the slight angle change from the Bragg angle ⁇ B of the incident beam LB, the change of the environmental temperature and the air pressure, etc.
  • ⁇ 1st order diffracted beam LBn ′ (sub diffracted beam) as noise light is generated.
  • the ⁇ 1st-order diffracted beam LBn ′ is generated at a diffraction angle ⁇ d that is symmetrical to the diffraction angle + ⁇ d of the main diffracted beam LBn with respect to the 0th-order beam LBnz.
  • FIG. 5 is a graph showing an example of the intensity distribution of diffracted light (including zero-order light) emitted from the selection optical element OSn (crystal AOG), and the vertical axis represents the intensity of the incident beam LB as 100%. It represents the ratio of the intensity of the 0th-order beam LBnz, the + 1st-order diffracted beam (main diffracted beam) LBn, and the ⁇ 1st-order diffracted beam LBn ′ to be emitted.
  • OSn crystal AOG
  • the + 1st diffracted beam LBn and the ⁇ 1st diffracted beam LBn ′ are not generated, and only the 0th beam LBnz has a high ratio, for example, the incident beam
  • the ratio is generated by multiplying the intensity of LB by the transmittance ⁇ (for example, about 98%) of the optical element for selection OSn (crystal AOG).
  • the + 1st order diffracted beam LBn is generated with an efficiency ⁇ according to the magnitude of the RF power (amplitude of the drive signal DFn).
  • the efficiency ⁇ is about 80% at the maximum, and the intensity of the + 1st-order diffracted beam LBn is at the maximum with respect to the intensity of the beam LB, which varies depending on the physical properties of the crystalline AOG, considering the transmittance ⁇ ( ⁇ 0.98). It becomes about 78% ( ⁇ ⁇ ⁇ ). Therefore, the intensity of the zeroth-order diffracted beam LBnz which is not diffracted when in the on state is about 20% of the remaining intensity.
  • the ratio of the respective intensities of the + 1st order diffracted beam LBn and the 0th order diffracted beam LBnz decreases from the ideal state (catalog value) accordingly .
  • the frequency of the RF power (drive signal DFn) applied to each of the selection optical elements OSn is changed from a prescribed value to adjust the diffraction angle of the main diffraction beam LBn at the selection optical elements OSn.
  • the spot light beam SP of the beam LBn projected onto the substrate P is shifted at high speed by a small amount (about ⁇ several ⁇ m) in the sub scanning direction.
  • This shift function can be realized by changing the frequency of the drive signal DFn within a predetermined range, that is, modulating the frequency of the drive signal DFn at high speed even while the spot light SP scans over the substrate P. .
  • the selection optical element (AOM) OSn may operate out of the condition of the Bragg diffraction, and as noise light as the change of the diffraction efficiency of the selection optical element OSn
  • the intensity of the ⁇ 1st-order diffracted beam LBn ′ (sub-diffraction beam) may be increased. Since the -1st order diffracted beam LBn 'as noise light is cut by the shield plate IMn' (blocking optical member), it can block the incidence on the drawing unit Un of the latter stage, but the intensity (light quantity) of the main diffracted beam LBn is It will change.
  • a shift function of the spot light SP in the sub scanning direction (X direction) by frequency modulation of the drive signal DFn applied to the selection optical element OSn (X shift function by the selection optical element OSn)
  • the diffraction efficiency of the selection optical element OSn is adjusted to control the intensity of the main diffraction beam LBn for drawing.
  • FIG. 6 shows a beam switching unit (selecting optical elements OS1 to OS6, reflection mirrors M1 to M12, selection mirrors) for selectively supplying the beam LB from the light source device LS shown in FIG. 1 to each of the drawing units U1 to U6.
  • a beam switching unit selecting optical elements OS1 to OS6, reflection mirrors M1 to M12, selection mirrors
  • the schematic arrangement of the IM1 to IM6 and the relay optical system etc.) is shown, and the connection relationship of the light source device LS, the drawing control device (drawing control unit) 200, and the light amount measuring unit 202 is shown.
  • the drawing control device (drawing control unit) 200 receives the origin signals SZ1 to SZ6 from the beam receiving system 60b of each of the drawing units U1 to U6 shown in FIG. While making the determination, drive signals DF1 to DF6 whose amplitude (power) and frequency are adjusted are output to each of the selection optical elements OS1 to OS6. As described in FIG.
  • the beam LB from the light source device LS is reflected by the reflection mirrors M1 and M2 and sequentially passes through the selecting optical elements OS5, OS6, OS3, OS4, OS1, and OS2, and then FIG.
  • FIG. 6 only the reflection mirrors M1, M7, and M8 in the optical path are shown, and the reflection mirror M13 serves as a beam switching portion between the selection optical element OS2 and the absorber TR. Is added.
  • the reflection mirror M13 reflects the zeroth-order diffracted beam that has not been reflected by the selection mirror IM2 through the selection optical element OS2 toward the absorber TR.
  • the reflection mirrors M1 to M13 and the selection mirrors IM1 to IM6 included in the beam switching unit are laser mirrors similar to the reflection mirrors M20 to M24 in the drawing unit Un and are slightly transmitted at the wavelength of the beam LB (for example, 355 nm) Have a rate (eg, 1% or less).
  • a photoelectric sensor DTa for detecting the intensity (light quantity) of the beam LB emitted from the light source device LS is provided on the back surface side of the reflection mirror M1.
  • the photoelectric sensor DTb detects the zeroth-order diffracted beam LBnz of the beam LB which is transmitted when the selection optical elements OS1 to OS6 are in the off state, or which is not diffracted by the on state selection optical element OSn.
  • the photoelectric sensors DTa and DTb are configured by any of a PIN photodiode, an avalanche photodiode (APD), and a metal-semiconductor-metal (MSM) photodiode.
  • the photoelectric signal Sa output from the photoelectric sensor DTa is sent to the light amount measuring unit 202 to monitor the original intensity (light amount) of the beam LB emitted from the light source device LS, and the photoelectric signal output from the photoelectric sensor DTb Sb is also sent to the light amount measurement unit 202 in order to monitor changes in transmittance of the six selection optical elements OS1 to OS6 and changes in diffraction efficiency.
  • the photoelectric signal So output from the photoelectric sensor DTo also measures the amount of light reflected from the reference pattern formed on the outer peripheral surface of the rotary drum DR, the ground pattern formed on the substrate P, or the alignment mark. It is sent to 202.
  • FIG. 6 shows the state when only the selection optical element OS4 is in the on state, and the + 1st order (mainly diffracted) beam of the beam LB from the light source device LS diffracted by the selection optical element OS4 is a beam It is supplied to the drawing unit U4 as LB4.
  • the light source device LS generates a clock signal LTC (for example, 400 MHz) for pulse light emission of the beam LB at the frequency Fa, and the clock signal LTC is sent to the drawing control device 200 and the light amount measurement unit 202.
  • the drawing control device 200 generates drawing bit string data SDn (n is the number corresponding to any one of the drawing units U1 to U6) including the bit number corresponding to the number of pixels drawn during one scan of the spot light SP as a light source device.
  • the light source device LS and the drawing control device 200 exchange various control information (commands and parameters) via an interface bus (which may be a serial bus) SJ.
  • the light source device LS is a fiber amplifier laser light source as shown in FIG. 7 (a laser light source which generates ultraviolet pulsed light by an optical amplifier and a wavelength conversion element).
  • the configuration of the fiber amplifier laser light source (LS) of FIG. 7 is briefly described, for example, because it is disclosed in detail in, for example, WO 2015 / 166,910.
  • the light source device LS generates a pulse signal in the infrared wavelength region in response to the control circuit 120 including a signal generating unit 120 a that generates a clock signal LTC for generating the pulse LB of the beam LB at the frequency Fa.
  • a seed light generator 135 for generating two types of seed lights S1 and S2 to emit light.
  • the seed light generation unit 135 includes DFB semiconductor laser devices 130 and 132, lenses GLa and GLb, a polarization beam splitter 134, etc.
  • the DFB semiconductor laser device 130 has a peak intensity in response to a clock signal LTC (eg 400 MHz).
  • the DFB semiconductor laser device 132 generates a large sharp or sharp pulse-like seed light S1, and the DFB semiconductor laser device 132 responds to the clock signal LTC and generates small (temporally broad) pulse-like seed light S2 with small peak intensity. Occur.
  • the seed light S1 and the seed light S2 are set such that the light emission timing is synchronized (coincident), and the energy per pulse (peak intensity ⁇ light emission time) is substantially the same.
  • the polarization state of the seed light S1 generated by the DFB semiconductor laser device 130 is set to S polarization
  • the polarization state of the seed light S2 generated by the DFB semiconductor laser device 132 is set to P polarization.
  • the polarization beam splitter 134 transmits the seed light S1 of S-polarization from the DFB semiconductor laser device 130 and guides it to the electro-optical device (EO element by Pockels cell, Kerr cell, etc.) 136 and P polarization from the DFB semiconductor laser device 132 Seed light S 2 is reflected and guided to the electro-optical element 136.
  • the electro-optical element 136 switches the polarization states of the two types of seed light S1 and S2 at high speed by the drive circuit 136a in accordance with the drawing bit string data SDn sent from the drawing control device 200 of FIG.
  • the electro-optical element 136 does not change the polarization states of the seed lights S1 and S2, and leaves the polarization beam splitter as it is.
  • the electro-optical element 136 rotates the polarization direction of the incident seed light S1 and S2 by 90 degrees to lead to a polarization beam splitter. Lead to 138. Therefore, when the logic information of the pixel of the drawing bit string data SDn is in the H state (“1”), the electro-optical element 136 converts the seed light S1 of S polarization into seed light S1 of P polarization and the seed of P polarization The light S2 is converted into seed light S2 of S polarization.
  • the polarization beam splitter 138 transmits P-polarized light and guides it to the combiner 144 through the lens GLc, reflects S-polarized light and guides it to the absorber 140.
  • the seed light (one of S1 and S2) transmitted through the polarization beam splitter 138 is used as a seed light beam Lse.
  • the excitation light (pump light and charge light) from the excitation light source 142 guided to the combiner 144 through the optical fiber 142 a is combined with the seed light beam Lse emerging from the polarization beam splitter 138 and enters the fiber optical amplifier 146 Do.
  • the seed light beam Lse is amplified while passing through the inside of the fiber optical amplifier 146.
  • the amplified seed light beam Lse is emitted from the exit end 146 a of the fiber light amplifier 146 with a predetermined divergence angle, and passes through the lens GLd to be incident on the first wavelength conversion optical element 148.
  • the first wavelength conversion optical element 148 is a second harmonic whose wavelength is 1/2 of the wavelength ⁇ with respect to the seed light beam Lse (wavelength ⁇ ) incident by the second harmonic generation (SHG).
  • the second harmonic (wavelength ⁇ / 2) of the seed light beam Lse and the original seed light beam Lse (wavelength ⁇ ) are incident on the second wavelength conversion optical element 150 through the lens GLe so as to be condensed.
  • the second wavelength conversion optical element 150 has a wavelength of 1/3 ⁇ due to sum frequency generation (SFG) of the second harmonic (wavelength ⁇ / 2) and the seed light beam Lse (wavelength ⁇ ).
  • Generates the third harmonic of This third harmonic becomes an ultraviolet pulse light (beam LB) having a peak wavelength in a wavelength band of 370 mm or less (for example, 355 nm).
  • the beam LB (divergent beam) generated from the second wavelength conversion optical element 150 is converted into a parallel beam having a beam diameter of about 1 mm by the lens GLf, and is emitted from the light source device LS.
  • the electro-optical element 136 receives the incident seed light S1. , And the polarization state of the light beam S2 are directly guided to the polarization beam splitter 138 without changing the polarization state. Therefore, the seed light beam Lse incident on the combiner 144 is derived from the seed light S2.
  • the fiber optical amplifier 146 (or the wavelength conversion optical element 148, 150) has a low peak intensity and a low amplification efficiency (or wavelength conversion efficiency) with respect to the seed light S2 having a broad characteristic that is temporally broad.
  • the P-polarized beam LB emitted from the apparatus LS is pulsed light that is not amplified to the energy required for exposure.
  • the energy of the beam LB generated from such seed light S2 is extremely low, and the intensity of the spot light SP irradiated to the substrate P is extremely low.
  • the beam LB emitted in such a non-drawing state is turned off. Also called beam (off pulse light).
  • the electro-optical element 136 receives the incident seed light
  • the polarization states of S 1 and S 2 are changed and introduced to the polarization beam splitter 138. Therefore, the seed light beam Lse incident on the combiner 144 is derived from the seed light S1.
  • the seed light beam Lse Since the light emission profile of the seed light beam Lse derived from the seed light S1 has a large peak intensity and is sharp, the seed light beam Lse is efficiently amplified (or wavelength converted) by the fiber light amplifier 146 (or the wavelength conversion optical elements 148 and 150)
  • the light beam LB of P-polarization output from the light source device LS has the energy necessary to expose the substrate P.
  • the beam LB output from the light source device LS in the drawing state is both on-beam (on-pulse light) to distinguish it from the off-beam (off-pulse light) emitted in the non-drawing state. Call.
  • the fiber amplifier laser light source as the light source device LS, one of the two types of seed light S1 and S2 is selected by the electro-optical element 136 as the light modulator for drawing and then light amplification
  • the fiber amplifier laser light source can be an ultraviolet pulse light source that performs burst light emission at high speed in response to drawing data (SDn).
  • the drawing control device 200 shown in FIG. 6 inputs the origin signals SZ1 to SZ6 from the drawing units U1 to U6, and makes the rotational speeds of the polygon mirrors PM of the drawing units U1 to U6 coincide with each other. It also has a function of synchronously controlling the rotation of the polygon mirror PM so that the rotational angle positions (phase of rotation) have a predetermined relationship with each other. Furthermore, the drawing control device 200 includes a memory for storing drawing bit string data SDn to be drawn by drawing lines SL1 to SL6 by the spot lights SP of the drawing units U1 to U6 based on the origin signals SZ1 to SZ6.
  • the drawing control device 200 it is preset that how many pulses of the beam LB are used to draw data (1 bit) of one pixel of the drawing bit string data SDn stored in the memory. For example, when one pixel is set to be drawn by two pulses of beam LB (two spot lights SP in each of the main scanning direction and the sub scanning direction), the data of drawing bit string data SDn is 2 of clock signal LTC. Each clock pulse is read out for one pixel (one bit) and applied to the drive circuit 136a of FIG.
  • FIG. 8 shows the drive control unit 210 of the rotary drum DR shown in FIG. 1, the drawing control apparatus 200 shown in FIG. 6, the light source apparatus LS shown in FIG. 7, and the drawing units U1 to U6 (Un: Here, it is a block diagram showing an overall control system when pattern drawing is performed in cooperation with only one representative).
  • the rotating drum DR is provided with a shaft extending in the Y direction coaxially with the central axis AXo, and this shaft is rotationally controlled by a drive control unit 210 including a motor, a servo circuit, and the like.
  • a disk-like or annular scale member ESD coaxial with the central axis AXo at the end of the rotary drum DR in the Y direction. are fixed and rotate in the XZ plane with the rotary drum DR.
  • grid-like graduations are engraved along the circumferential direction at a constant pitch (for example, about 20 ⁇ m).
  • the axis Le (see FIG. 2) of the odd-numbered drawing units U1, U3, U5 and the even number
  • the axis Le of each of the drawing units U2, U4, and U6 (see FIG. 2) is set at a predetermined angle, for example, 10 ° to 20 ° with respect to the central plane pcc.
  • a predetermined angle for example, 10 ° to 20 ° with respect to the central plane pcc.
  • the odd-numbered drawing units Un are shown in FIG. 8 for the sake of simplicity.
  • a cross-shaped alignment mark (or the outer peripheral surface of the rotating drum DR) is formed on the substrate P on the upstream side of the odd-numbered drawing units Un with respect to the traveling direction of the substrate P wound and transported on the rotating drum DR.
  • a plurality (AM1 to AM4) of alignment system AMn as a mark detection system for detecting the position of the formed reference pattern) is provided side by side in the Y direction.
  • Alignment system AMn has a detection field (detection area) of about 200 to 500 ⁇ m square on substrate P, and alignment system AMn is a CCD or CMOS imaging device for capturing an image of a mark appearing in the detection area at high shutter speed. Prepare.
  • An image signal including an image of a mark imaged (captured) by the imaging device is image-analyzed by the mark position detection unit 212, and the relative position between the center position of the imaged mark image and the reference position (center point) in the detection area Information is generated on the amount of positional deviation in two-dimensional (main scanning direction and sub scanning direction).
  • encoder heads read heads, detection heads
  • EH1, EH2, and EH3 for reading the movement of the scale are provided around the scale member ESD so as to face the outer peripheral surface thereof.
  • the illustration of the encoder head EH3 is omitted in FIG.
  • encoder head EH1 is set to have the same orientation as the detection area of alignment system AMn when viewed from central axis AXo
  • encoder head EH2 is an odd-numbered drawing unit Un when viewed from central axis AXo.
  • the encoder head EH3 (not shown) is set to have the same orientation as the drawing position (drawing lines SL1, SL3 and SL5), and the drawing position (drawing line SL2) of even-numbered drawing units Un when viewed from the central axis AXo. It is set to be in the same direction as SL4, SL6).
  • Each of the encoder heads EH1 and EH2 (and EH3) periodically changes the level in accordance with the circumferential movement of the scale member ESD, and outputs a two-phase signal having a phase difference of 90 degrees to the rotational position detection unit 214. Output.
  • the rotational position detection unit 214 includes a counter circuit that counts a two-phase signal from each of the encoder heads EH1 and EH2 (and EH3), and the amount of movement (change in position) of the scale is determined by the pixel size or the effective light beam SP. Digitally counted measurement values (moving position information, count value) with a resolution (for example, 0.2 ⁇ m) of a submicron smaller than half the diameter ⁇ , preferably less than 1/10.
  • the scale member ESD, the encoder heads EH1, EH2, and EH3, and the rotational position detection unit 214 constitute an encoder measurement system, and measurement values (moving position information, meter) generated by the rotational position detection unit 214 The numerical value) represents the change of the movement position of the substrate P in the sub scanning direction.
  • the mark position detection unit 212 latches measurement values (moving position information, count value) generated by the rotation position detection unit 214 at the moment when the image pickup element of the alignment system AMn captures an image of the mark in the detection area.
  • the mark position detection unit 212 rotates the position of the mark on the substrate P based on the relative positional deviation amount of the mark image obtained by image analysis and the latched measurement value (movement position information, count value)
  • the position information calculated in association with the rotational angle position of DR with submicron accuracy is output to the drawing control device 200.
  • the counter circuit provided in the rotational position detection unit 214 corresponding to each of the encoder heads EH1 and EH2 (and EH3) has a configuration in which each of the encoder heads EH1 and EH2 (and EH3) is in the circumference of the scale member ESD. When a zero mark provided at one position in the direction is detected, zero is reset.
  • the parallel plate HVP provided in the drawing unit Un is driven from a drive source such as a piezo motor (PZM) or voice coil motor (VCM) that changes the amount of inclination, and from the neutral state of the parallel plate HVP. And a sensor that measures the amount of tilt of the vehicle.
  • the drive control unit 216 can continuously change the inclination angle position of the parallel flat plate HVP while the drawing unit Un is drawing a pattern based on the command from the drawing control device 200.
  • a selection element control unit 200A responds to the origin signal SZn (SZ1 to SZ6) from each of the drawing units Un (U1 to U6) to select optical elements for selection corresponding to each of the drawing units Un (U1 to U6).
  • the drive signal DFn is applied to any one of OSn (OS1 to OS6).
  • the selection element control unit 200A is provided with a function of adjusting the amplitude (RF power) or frequency of the drive signal DFn, which will be described with reference to FIG.
  • the polygon control unit (rotational motor control unit) 200B makes the rotational motor RM for rotating the polygon mirror PM of each of the drawing units Un ⁇ several rpm with respect to the commanded speed between the rotational speed of 3 to 40,000 rpm.
  • the rotation is precisely controlled within an accuracy of ⁇ 2 rpm.
  • Information of the rotation angle position of the rotary drum DR (moving position of the substrate P) measured by the rotation position detection unit 214 and information of the origin signal SZn are also used for control of the rotation motor RM by the polygon control unit 200B.
  • the drawing control unit 200C is a memory circuit that stores drawing pattern information (bit map data) corresponding to a pattern to be drawn on the substrate P by each of the drawing units Un, an origin signal SZn from each drawing unit Un and a rotational position Based on the information of the rotational angle position (moving position of the substrate P) of the rotary drum DR measured by the detection unit 214, the drawing bit string data SDn to be drawn by the corresponding drawing unit Un is read from the memory circuit and a clock signal A data transmission circuit or the like is provided to be sent to the light source device LS in response to the LTC.
  • drawing pattern information bit map data
  • the drawing control unit 200C may form a pattern formation area (a base pattern may already be formed) on the substrate P and the drawing position ( Information on positional errors in the main scanning direction (Y direction) and sub scanning direction (X direction) with each of the drawing lines SL1 to SL6) is estimated and calculated, or the rotary drum DR measured by the rotational position detection unit 214 And a processor configured to estimate and calculate information on a movement position error caused by an error in movement speed of the substrate P in the sub-scanning direction or unevenness in speed on the basis of the information on the rotation angle position.
  • the processor generates correction information for adjusting (correcting) the pattern drawing position by each of the drawing units Un on the basis of the information of the position error of the pattern formation area estimated and calculated and the information of the movement position error of the substrate P. .
  • the correction information generated by the processor of the drawing control unit 200C an adjustment amount for shifting the position of the drawing line SLn (spot light SP) by each of the drawing units Un in the sub scanning direction (X direction)
  • the information on the timing of adjustment, the designation of the mechanism for adjustment, etc. is included.
  • the tilt angle provided corresponding to each of the drawing units Un is adjusted in parallel Either or both of the flat plate HVP and the frequency-modulated selection optical element OSn are used.
  • the mechanism for shifting the drawing line SLn (spot light SP) in the X direction by the inclination of the parallel plate HVP is a mechanical correction mechanism.
  • the drawing line SLn (spot light SP) can be shifted by a relatively large stroke (for example, about several tens of ⁇ m).
  • the mechanism for shifting the drawing line SLn (spot light SP) in the X direction by frequency modulation of the selection optical element OSn (also referred to as an X shifter mechanism by the selection optical element OSn or an X shifter mechanism by AOM) is electrically It is possible to shift the drawing line SLn (spot light SP) at high speed in response to the scanning timing of the beam LBn for each of the reflecting surfaces RP of the polygon mirror PM. Since the adjustment range of the diffraction angle (+ ⁇ d shown in FIG. 4) of the main diffracted beam LBn by the frequency modulation of OSn is narrow, the shift amount is about ⁇ several ⁇ m.
  • FIG. 9 shows a specific circuit block of the selection element control unit 200A shown in FIG. 8.
  • the selection element control unit 200A includes a processor and receives the origin signal SZn (SZ1 to SZ6), and the drawing control unit 200C. And a control circuit unit 250 for inputting correction information for the X shifter mechanism by the selection optical element OSn generated by the processor of FIG. 10, and six circuit units CCB1 to CCB6 for outputting the drive signals DF1 to DF6. Since all of the circuit units CCB1 to CCB6 have the same configuration, the configuration of the circuit unit CCB1 will be representatively described.
  • the selection element control unit 200A is provided with a reference oscillator 260 that generates a reference signal RFo that is a reference frequency (center frequency) of the drive signal DFn applied to the selection optical element OSn.
  • the control circuit unit 250 corrects the correction information ⁇ AC1 regarding the correction amount from the reference value of the amplitude (power) of the drive signal DFn based on the correction information for the X shifter mechanism by the selection optical element OSn from the drawing control unit 200C.
  • ⁇ AC 6 and correction information ⁇ FC 1 to ⁇ FC 6 concerning the correction amount from the center frequency of the reference signal RFo of the drive signal DFn are generated.
  • control circuit unit 250 is a switch signal for controlling ON (application) / OFF (non-application) of the drive signal DFn applied to the corresponding selection optical element OSn based on the input of the origin signal SZn (SZ1 to SZ6). Generate LP1 to LP6.
  • the circuit unit CCB1 (CCBn) is a frequency-modulated high frequency signal that is the source of the drive signal DF1 (DFn) based on the reference signal RFo from the reference oscillator 260 and the correction information ⁇ FC1 ( ⁇ FCn) from the control circuit unit 250.
  • a frequency modulation circuit 251 that generates a signal
  • an amplitude adjustment circuit 252 that adjusts the amplitude (gain) of the high frequency signal generated by the frequency modulation circuit 251 based on the correction information ⁇ AC1 ( ⁇ ACn) from the control circuit unit 250; Power that amplifies the high frequency signal whose amplitude is adjusted and generates a drive signal DF1 (DFn), and switches on / off of the drive signal DF1 (DFn) in response to the switch signal LP1 (LPn) from the control circuit unit 250 And an amplifier circuit 253. Similar frequency modulation circuit 251, amplitude adjustment circuit 252, and power amplification circuit 253 are provided in the other circuit units CCB2 to CCB6.
  • the selection optical element OSn for AOM can adjust the diffraction angle by changing the frequency of the drive signal DFn, but the intensity of the drawing beam LBn changes due to the change of the diffraction efficiency due to the change of the condition of the Bragg diffraction. There is.
  • the frequency dependency of the intensity change differs depending on the material of the crystalline AOG of the selection optical element OSn.
  • FIG. 10 is a graph schematically illustrating the relationship between the frequency dependency of the intensity change of the beam (main diffracted beam) LBn by the selection optical element (AOM) OSn and the X shift amount of the spot light SP. .
  • the horizontal axis represents the frequency (MHz) of the drive signal DFn
  • the vertical axis represents 100% of the intensity of the beam (main diffracted beam) LBn obtained when the drive signal DFn is at the specified frequency (center frequency) fcc.
  • Relative intensity ratio (%) Although the frequency dependency of the intensity change differs depending on the material of the crystal AOG of the optical element for selection OSn, it has characteristics Ka, Kb as an example.
  • Characteristic Ka changes the frequency of drive signal DFn by a change width (amount of change) ⁇ fc with respect to prescribed frequency fcc, the change tendency of the intensity ratio of characteristic Ka is compared to the change tendency of the intensity ratio of characteristic Kb. It is getting bigger.
  • the characteristic Ka means that the intensity decrease of the beam LBn with respect to the frequency change is sharper than the characteristic Kb, and the shift amount of the spot light SP due to the frequency change can not be increased.
  • the shift amount ⁇ Xsf of the spot light SP with respect to the change width ⁇ fc of the frequency is the same even if the crystal AOG (characteristics Ka, Kb) of different materials is used. It depends on the difference in the speed of sound waves.
  • the spot light SP is shifted by about 4 ⁇ m with respect to the change width ⁇ fc of the frequency of the drive signal DFn, the intensity ratio is about 87% in the characteristic Ka, and the intensity ratio 96 in the characteristic Kb. It shall be about%.
  • the change width ⁇ fc of the frequency further increases, in the case of the characteristic Ka, the intensity ratio rapidly decreases.
  • the control circuit unit 250 in FIG. 9 stores the characteristic Ka as shown in FIG.
  • the control circuit unit 250 obtains the intensity ratio corresponding to the correction information ⁇ FCn (the change width of the frequency) from the table or approximate function of the characteristic Ka or Kb, and returns the lowered intensity ratio to the original state.
  • the correction information ⁇ ACn of the amplitude of the drive signal DFn is output to the amplitude adjustment circuit 252.
  • the correction information .DELTA.FCn and .DELTA.ACn are updated at the timing between the pulse-like origin signals SZn generated eight times during one rotation of the polygon mirror PM (four times for every other in the case of one-surface skipping) and the control circuit It is output from the unit 250. Therefore, the drive signal DFn applied from the power amplification circuit 253 to the selection optical element OSn is a designated shift of the spot light SP in the sub-scanning direction immediately before the pattern drawing after the generation of one pulse of the origin signal SZn.
  • the amplitude is corrected to the frequency corresponding to the quantity and adjusted to the amplitude such that the reduction of the intensity ratio due to the frequency change is corrected.
  • the correction information ⁇ ACn ( ⁇ AC1 to ⁇ AC6) generated by the control circuit unit 250 is also used to equalize the intensity (light quantity) of the beam LBn projected onto the substrate P from each of the drawing units Un within the allowable range. .
  • FIG. 11 shows the amplitude (RF power) of the drive signal DFn supplied to the selection optical element (AOM) OSn and the diffraction efficiency ⁇ (the ratio of the intensity of the + 1st order diffracted beam LBn to the intensity of the incident beam LB).
  • ⁇ the ratio of the intensity of the + 1st order diffracted beam LBn to the intensity of the incident beam LB.
  • the horizontal axis represents the RF power (amplitude of the drive signal DFn) applied to the selection optical element (AOM) OSn
  • the vertical axis represents the + 1st order diffracted beam of the selection optical element OSn used in Bragg diffraction. Represents the diffraction efficiency ⁇ (%) of the main diffracted beam).
  • FIG. 11 shows the amplitude (RF power) of the drive signal DFn supplied to the selection optical element (AOM) OSn and the diffraction efficiency ⁇ (the ratio of the intensity of the + 1st order diffracted beam LB
  • the diffraction efficiency ⁇ reaches the maximum diffraction efficiency ⁇ max as the RF power increases, and has a characteristic that the diffraction efficiency ⁇ decreases even if the RF power is further increased. Therefore, adjustment of the diffraction efficiency of each of the selection optical elements OS1 to OS6 (amplitude setting of the drive signal DFn) is performed in consideration of the maximum diffraction efficiency ⁇ max.
  • the control circuit unit 250 shown in FIG. 9 is estimated from the change in the amplitude of the drive signal DFn and the change in the diffraction efficiency ⁇ of the optical element for selection OSn (and the change in the diffraction efficiency ⁇ ) based on the characteristics shown in FIG.
  • the correlation with the intensity change of the beam LBn as the + 1st order diffracted beam to be obtained is determined in advance and stored in a table or a functional expression. Therefore, the correction information ⁇ ACn generated by the control circuit unit 250 is finally set with reference to a table or a functional expression corresponding to the characteristic of the diffraction efficiency ⁇ as shown in FIG.
  • FIG. 12 is a time chart schematically showing setting timings of the correction information ⁇ FCn and ⁇ ACn as described above.
  • the origin signal SZn is generated in a pulse shape every time each reflecting surface RP of the polygon mirror PM reaches a predetermined angle position, but the rotational speed of the polygon mirror PM is uniform and constant, and the shape error of the polygon mirror PM (apex angle If there is no (angle variation), the time interval Trp of the rising timing of the H level of the pulse-like origin signal SZn becomes constant.
  • the drawing bit string data SDn described above with reference to FIGS. 6 to 8 is bit data for each pixel in response to the clock pulse of the clock signal LTC after a predetermined delay time ⁇ TD after one pulse of the origin signal SZn is generated.
  • the control circuit unit 250 of the selection element control unit 200A shown in FIG. 9 turns on the selection optical element OSn to be selected.
  • the switch signal LPn is set to the H level, and immediately after the drawing time TSn elapses, the switch signal LPn is set to the L level.
  • the calculation timing of the correction information ⁇ FCn and ⁇ ACn is set, for example, each time the position of the substrate P measured by the encoder heads EH1 and EH2 (and EH3) and the rotational position detection unit 214 shown in FIG. be able to.
  • FIG. 13 a plurality of pattern formation areas (device areas) APF including the underlying pattern layer and a plurality of alignment marks MK1 to MK4 arranged in a predetermined positional relationship with respect to each pattern formation area APF are formed.
  • the planar substrate P is developed in a planar manner in the XY plane. Further, FIG.
  • FIG. 13 also shows an arrangement relationship between six drawing lines SL1 to SL6 set on such a substrate P and detection regions Vw1 to Vw4 of alignment microscopes (alignment system) AM1 to AM4.
  • the scale member ESD by the encoder head EH1 see FIG. 8 so as to minimize Abbe error during measurement.
  • the reading position of the scale of is set.
  • the scale member ESD by the encoder head EH2 is minimized so as to minimize Abbe error during measurement.
  • the reading position of the scale is set, and the encoder head EH3 is set to minimize the Abbe error during measurement on the extension of the line segment parallel to the Y axis including each of the even-numbered drawing lines SL2, SL4, and SL6.
  • the reading position of the scale of the scale member ESD is set.
  • the arrangement of such encoder heads EH1 to EH3 is disclosed, for example, in WO 2013/146184.
  • the marks MK1 on the substrate P are formed at a constant pitch (for example, 5 mm pitch) along the X direction (long direction) in the vicinity of the end of the substrate P on the -Y direction side. In the vicinity of the end portion on the + Y direction side, it is formed at a constant pitch (for example, 5 mm pitch) along the X direction (longitudinal direction).
  • the positions in the X direction of the mark MK1 and the mark MK4 are formed to be the same, and the marks MK2 and MK3 formed between the mark MK1 and the mark MK4 are ends on the + X direction side (downstream side) of the pattern forming area APF. In the vicinity of the portion and near the end portion on the -X direction side (upstream side), they are arranged in a line in the Y direction together with the marks MK1 and MK4.
  • each of encoder heads EH1 to EH3 corresponds to the circumferential direction of the scale member ESD scale. If a zero mark provided at one location is detected, zero reset is performed. Therefore, when marks MK1 to MK4 formed in the vicinity of the end on the + X direction side (downstream side) of the pattern formation area APF on the substrate P are detected in the detection areas Vw1 to Vw4 of the alignment microscopes AM1 to AM4, respectively.
  • the scale position of the scale member ESD measured by the encoder head EH1 (count value of the counter circuit) is stored as the drawing start position, and the pattern drawing operation of each of the drawing units U1 to U6 is controlled based on the drawing start position. .
  • the drawing start position where the scale position of the scale member ESD measured by the encoder head EH2 (count value of the counter circuit) is stored
  • pattern drawing by odd-numbered drawing units U1, U3, U5 When superposition exposure is started, and the graduation position (count value of the counter circuit) of the scale member ESD measured by the encoder head EH3 becomes the stored drawing start position
  • the even-numbered drawing units U2, U4, and U6 are used. Pattern drawing (superposing exposure) is started.
  • the drawing control unit 200C shown in FIG. 8 arranges each on both sides in the Y direction of the pattern formation area APF.
  • the two-dimensional positional error (overlapping error) of the substrate P is determined based on the position detection result of each of the alignment microscopes AM1 and AM4 of the marks MK1 and MK4 and the measurement value by the encoder head EH1.
  • the estimation operation is sequentially performed immediately before the pattern drawing in.
  • the substrate P can be slightly shrunk partially in the X direction (sub scanning direction, long direction) only in the range including the pattern formation area APF to deteriorate the overlay accuracy
  • the X shifter mechanism by AOM is used. The operation of using the method to reduce the registration error will be described with reference to the chart (graph) diagram of FIG.
  • the substrate P is closely supported on the outer peripheral surface of the rotary drum DR in a state in which a constant tension (tension) is applied in the longitudinal direction, but the magnitude of the tension (N / m)
  • the substrate P is supported on the rotating drum DR with more or less stretching due to tension fluctuations.
  • partial expansion and contraction may occur in the substrate P also by heat treatment or wet treatment when forming the base pattern layer.
  • FIG. 14 it is assumed that expansion and contraction of about several ⁇ m is generated in the X direction on the substrate P supported by the rotating drum DR.
  • the vertical axis in FIG. 14 corresponds to the X direction (X direction) according to the overlay error amount .DELTA.Xer according to the overlay error amount .DELTA.Xer (.mu.m) in the X direction measured with the encoder measurement position as a reference and the spot light SP by the X shifter mechanism by AOM.
  • each of the encoder measurement position positions PXa, PXb,..., PXj represents a position corresponding to the design interval (pitch) in the X direction of the mark MK1, and the position PXa is a drawing of the pattern formation area APF.
  • the position detected by the alignment microscope AM1 of the mark MK1a (leading mark) formed at the end on the start side is matched.
  • the marks MK1b, MK1c,..., MK1j aligned in the X direction from the marks MK1a are encoder measurement positions PXb, PXc,. Correctly positioned on each of the
  • each of the marks MK1b, MK1c,..., MK1j is a partial for each of the encoder measurement positions PXb, PXc,.
  • the position is slightly shifted in the X direction.
  • the position shift is a characteristic FPX of the overlay error amount ⁇ Xer in the X direction, which is the detection position of each mark MK1a to MK1j by the alignment microscope AM1 and the movement position (encoder measurement position) of the substrate P measured by the encoder head EH1. It measures sequentially based on it.
  • the mark MK1g located at the seventh position from the first (first) mark MK1a is positioned substantially in agreement with the encoder measurement position PXg, but the first mark MK1a to the fourth mark MK1d correspond to each other.
  • the positional deviations of the marks MK1b, MK1c, and MK1d with respect to the encoder measurement positions PXb, PXc, and PXd respectively occur in the ⁇ X direction, and the positional deviation amount tends to gradually increase.
  • the substrate P is shrunk at a minute ratio in the X direction from the position of the top mark MK1a (near the drawing top position of the pattern forming area APF) to the position of the mark MK1d As a result, it extends at a very small ratio in the X direction from the position of the mark MK1 d to the position of the mark MK1 j.
  • the overlay pattern is drawn based on only the encoder measurement position (second exposure) based on the detection position of the leading mark MK1a, that is, the encoder measurement position PXa, the base pattern layer on the substrate P is formed.
  • the pattern to be superposed and exposed is displaced in the + X direction up to the position PXg (mark MK1g) as indicated by the characteristic FPX, and is displaced in the ⁇ X direction after the position PXg.
  • the positional deviation amount is the superposition error amount .DELTA.Xer, and in the example of FIG. 14, the superposition error amount .DELTA.Xer is generated with a width of about. +-. 4 .mu.m between the positions PXa to PXj.
  • the patterns in the X direction of the odd drawing lines SL1, SL3 and SL5 or in the X direction of the even drawing lines SL2, SL4 and SL6 are used. Counting from the top mark MK1a (and the mark MK4a formed on the opposite side of the substrate P in the width direction corresponding to the mark MK1a) by the time the end (drawing start end) in the X direction of the formation area APF reaches.
  • the second to third marks MK1 b (MK4 b) to MK1 c (MK4 c), preferably the further higher marks MK1 (MK4) are sequentially detected by the alignment microscope AM1 (AM4), and X of each mark MK1 (MK4)
  • the characteristic FPX is estimated based on the alignment error of the direction (pitch error). That is, in the drawing control unit 200C in the drawing control device 200 shown in FIG.
  • the drawing start end of the pattern formation area APF on the substrate P is the position of the odd-numbered drawing lines SL1, SL3 and SL5, or the even number
  • the positions of a plurality of marks MK1 (MK4) aligned in the X direction are sequentially read ahead and measured, and the partial tendency of characteristic FPX is sequentially estimated based on the measurement result Calculate For example, four marks MK1 from the first mark MK1a (MK4a) to the fourth mark MK1d (MK4d) before pattern drawing by odd-numbered drawing lines SLn or even-numbered drawing lines SLn is started, respectively.
  • the drawing control unit 200C sequentially calculates the nth to (n + 3) th four marks MK1 (MK4) based on the movement of the substrate P in the X direction. Then, the characteristic FPX regarding the section in the X direction of the substrate P in which the four marks MK1 (MK4) exist is sequentially estimated and calculated.
  • the drawing start end of the pattern formation area APF is an odd-numbered
  • the drawing lines SL1, SL3 and SL5 are reached.
  • the change tendency (change amount) of the superposition error amount ⁇ Xer in the section from the first mark MK1a to the second mark MK1b is already specified as the characteristic FPX, so the drawing control device 200 shown in FIG.
  • the selection element control unit 200A (more specifically, the control circuit unit 250 of FIG. 9) described in FIG.
  • the correction information .DELTA.FCn corresponding to the change of the superposition error amount .DELTA.Xer in the section of the marks MK1a to MK1b. It is generated based on the characteristic Ka or Kb and applied to the frequency modulation circuit 251.
  • the correction information ⁇ FCn is a superposition error of the frequency modulation degree (frequency correction amount ⁇ fc) of the reference signal RFo from the reference oscillator 260 in synchronization with the change of the encoder measurement position to the positions PXa to PXb. It is generated as a continuous function or a discrete function (step function) such that changes in the quantity ⁇ Xer are offset.
  • the characteristic FFC shown in FIG. 14 represents an example of the generated correction information ⁇ FCn.
  • the frequency correction amount ⁇ fc between each of the positions PXa to PXj specified by the encoder measurement is linearly approximated. .
  • the position of the spot light SP projected from each of the drawing units Un with respect to the sub-scanning direction of the substrate P in the pattern drawing (superposing exposure) on the pattern formation area APF on the substrate P In order to suppress (or cancel) the registration error amount ⁇ Xer estimated in advance based on the detected position in the X direction of the preread mark MK1 (MK4) in synchronization with the movement in the sub scanning direction (X direction) In the X direction. Therefore, the overlay accuracy when overlaying and exposing a new pattern (second pattern) on the base pattern layer already formed in the pattern formation area APF is that the substrate P is uniformly stretched or partially stretched. Even if you do, you will dramatically improve. Such high precision enables direct formation of micron-order fine electronic devices such as thin film transistors on a flexible substrate P that is easily deformed.
  • FIG. 10 shows the intensity ratio (attenuation factor) of the drawing beam LBn according to the frequency modulation degree (frequency correction amount ⁇ fc) set based on the characteristic FFC obtained as shown in FIG.
  • the correction amount of the amplitude (RF power) of the drive signal DFn which is obtained from the indicated characteristic Ka or Kb and necessary to compensate for the attenuation (the decrease in efficiency), is the characteristic of the diffraction efficiency ⁇ illustrated in FIG. Ask from Such processing is executed by the control circuit unit 250 of FIG. 9, and the correction amount of the amplitude (RF power) of the obtained drive signal DFn is generated as the correction information ⁇ ACn.
  • the correction information ⁇ ACn is generated by a function that changes the amplitude (RF power) in a continuous or stepwise manner, similarly to the correction information ⁇ FCn (characteristic of the frequency correction amount in FIG. 14) for operating the X shifter mechanism by AOM. It is applied to the amplitude adjustment circuit 252 of FIG. 9 at the same timing as the correction information ⁇ FCn.
  • the registration error caused by the expansion and contraction of the substrate P is dramatically reduced, and the registration accuracy is improved.
  • the joint accuracy in particular, the joint accuracy in the X direction
  • the joint accuracy in the X direction of the patterns drawn by each of the drawing units Un adjacent to each other in the main scanning direction (Y direction) This can be improved without using a time-consuming method of adjusting the combination of reflection surfaces (angular phase in the rotational direction) between polygon mirrors.
  • the X shifter mechanism by at least one AOM (selection optical element OSn) of the two drawing units Un,
  • the splice accuracy can be easily improved simply by adding an offset value corresponding to the splice error amount to the correction information ⁇ FCn.
  • the intensity change (exposure amount error) of the drawing beam LBn which may occur when the X shifter mechanism is operated can be simultaneously corrected. Therefore, the dimensional variation of the pattern of the minimum line width drawn by each of the drawing units Un can be reduced.
  • FIG. 15 is a view for explaining the beam selection and beam shift in the selection mirror (branch reflector) IM1 after the selection optical element OS1 (OSn) shown in FIG. 3, and
  • FIG. 16 is a polygon shown in FIG. It is a figure explaining the behavior of the beam from reflective surface RP of mirror PM to substrate P.
  • the selection mirror IM1 (IMn) is disposed in the vicinity of the plane Ps (pupil plane) between the relay optical systems (lenses Ga and Gb).
  • the deflection position of the selection optical element OS1 and the plane Ps are in the relationship of the pupil position and the image plane by the lens Ga of the relay optical system. Therefore, for the central axis (principal ray) of the drawing beam LB1 directed from the lens Ga to the reflection surface (45 ° to the XY plane) of the selection mirror IM1, the drive signal DF1 of the selection optical element OS1 has a specified frequency fcc In the case of FIG.
  • the diffraction angle + ⁇ d (see FIG. 4) of the beam LB1 emitted from the selection optical element OS1 is from the specified angle.
  • the beam LB1 that increases and reaches the selection mirror IM1 becomes a beam LB1 ′ that travels along the central axis AX1 ′ parallel shifted by ⁇ SF1 in the ⁇ Z direction from the optical axis AXa.
  • the central axis AX1 ′ of the beam LB1 ′ directed to the selection mirror IM1 is displaced from the defined position (position of the optical axis AX1) by the displacement amount ⁇ SF1- ⁇ SF0 in the Z direction Shift laterally (translate).
  • the central axis AX1 ′ of the beam LB1 ′ reflected in the ⁇ Z direction by the reflection surface of the selection mirror IM1 toward the lens Gc is parallel to the optical axis AX1 of the lens Gc, and the reflection surface (surface Ps) of the selection mirror IM1 is Since it is set near the front focal position of the lens Gc, the beam LB1 ′ emitted from the lens Gc is converted into a parallel beam slightly inclined in the XZ plane with respect to the optical axis AX1.
  • the plane Ps is finally set to be conjugate to the surface of the substrate P via the drawing unit U1 (Un), the spot light SP condensed on the substrate P also has the displacement amount ⁇ SF1. Shifted from the defined position (initial position) in the sub-scanning direction (X direction) by a small amount proportional to ⁇ SF 0.
  • FIG. 16 is a view of an optical path from one reflective surface RP of the polygon mirror PM rotating about the rotation axis AXp in the drawing unit U1 (Un) to the substrate P and viewed from the Y direction (main scanning direction)
  • the dimension of the reflective surface RP in the direction of the rotation axis AXp and the state of the shift of the beam LB1 are exaggerated.
  • the beam LB1 deflected by the selection optical element OS1 at a prescribed diffraction angle is incident on the reflection surface RP of the polygon mirror PM in a plane parallel to the XY plane and is reflected.
  • the beam LB1 incident on the reflecting surface RP is converged in the Z direction on the reflecting surface RP by the combined optical system of the first cylindrical lens CYa and the lens system Gu3 shown in FIG. 2 in the XZ plane.
  • the beam LB1 reflected by the reflecting surface RP is deflected at a high speed according to the rotation speed of the polygon mirror PM in a plane parallel to the XY plane including the optical axis AXf of the f ⁇ lens system FT.
  • the spot light SP is condensed on the substrate P via the cylindrical lens CYb.
  • the spot light SP is one-dimensionally scanned in a direction perpendicular to the paper surface in FIG.
  • the beam LB1 'laterally shifted by a displacement amount .DELTA.SF1-.DELTA.SF0 with respect to the beam LB1 at the reflection surface of the selection mirror IM1 is at the irradiation position of the beam LB1 on the reflection surface RP of the polygon mirror PM.
  • the light beam is incident at a position slightly deviated in the Z direction (sub scanning direction).
  • the optical path of the beam LB1 ′ reflected by the reflecting surface RP passes through the f ⁇ lens system FT and the second cylindrical lens CYb in a state slightly deviated from the optical path of the beam LB1 in the XZ plane, and the substrate P It is condensed as spot light SP 'on the top.
  • the reflective surface RP of the polygon mirror PM is optically disposed on the pupil plane of the f ⁇ lens system FT, but is reflected in the XZ plane of FIG. 16 by the action of the surface tilt correction by the two cylindrical lenses CYa and CYb.
  • the surface RP and the surface of the substrate P are in a conjugate relationship.
  • each central ray (principal ray) of the beam LB1 immediately after being reflected by the reflection surface of the selection mirror IM1 and the beam LB1 'laterally shifted is parallel to the optical axis AX1 of the lens Gc. Relationship (telecentric condition). Therefore, the central ray of the beam LB1 incident on the reflecting surface RP of the polygon mirror PM shown in FIG.
  • the spot light SP can be shifted by ⁇ ⁇ SFp in the sub-scanning direction by changing the frequency of the drive signal DF1 of the selection optical element OS1 from the specified frequency fcc by ⁇ ⁇ fc.
  • ) is the maximum range of the deflection angle (diffraction angle ⁇ d) of the selection optical element OS1 itself, the size of the reflection surface of the selection mirror IM1, the optical system up to the polygon mirror PM in the drawing unit U1.
  • it is limited by the magnification of (relay system), the dimension of the reflecting surface of polygon mirror PM in Z direction (sub scanning direction), the magnification from polygon mirror PM to substrate P (magnification of f ⁇ lens system FT), etc.
  • selection optical element OS1 and the drawing unit U1 have been described above, the other selection optical elements OS2 to OS6 and the drawing units U2 to U6 are configured in the same manner as in FIGS.
  • the selection optical element OSn (OS1 to OS6) responds to the switching function of the beam in response to the switch signal LPn (LP1 to LP6) and the correction information ⁇ FCn ( ⁇ FC1 to ⁇ FC6). Since it can also be used for the shift function of the spot light SP, the configuration of the beam transmission system for supplying a beam to each drawing unit Un (U1 to U6) is simplified. Furthermore, compared to the case where acousto-optical modulation elements (AOM and AOD) for beam selection and shift of the spot light SP are separately provided for each drawing unit Un, the number of heat generation sources can be reduced. The temperature stability of EX) can be enhanced.
  • the drive circuit for driving the acousto-optic modulator is arranged near the acousto-optic modulator because the drive signal DFn has a high frequency of about 80 to 200 MHz and it is necessary to shorten the signal cable.
  • the drive circuit is a large heat source. Even if a mechanism for cooling the drive circuit is provided, if the number is large, the temperature in the apparatus is likely to rise in a short time, and there is a possibility that the drawing accuracy may be reduced due to the temperature change of the optical system (lens or mirror). There is. Therefore, it is desirable that the number of drive circuits serving as a heat source and the acousto-optic modulator be smaller.
  • each of the selection optical elements OSn (OS1 to OS6) changes the diffraction angle of the beam LBn deflected as first-order diffracted light under the influence of temperature change
  • FIG. By providing a feedback control system that adjusts the value of the indicated correction information ⁇ FCn ( ⁇ FC1 to ⁇ FC6) based on the temperature change measured by the temperature sensor, the influence of the fluctuation of the diffraction angle can be easily offset. .
  • the beam shift function by the selection optical element OSn of the present embodiment can finely adjust the position of the drawing line SLn by the spot light SPn of the beam LBn from each of the plurality of drawing units Un at high speed in the sub scanning direction. Therefore, each of the adjacent drawing units Un (unit frame) is slightly rotated about the axis Le shown in FIG. 2 to adjust the inclination of each drawing line SLn, and then the drawing lines SLn are shifted in the sub scanning direction. As a result, it is possible to enhance the overlay accuracy and to improve the stitching accuracy at the time of pattern drawing at the end of each drawing line SLn.
  • Second Embodiment Correction mechanism that shifts the scanning locus (drawing line SLn) by the spot light SP of the beam LBn projected from each of the drawing units Un by the X shifter mechanism by AOM (selection optical element OSn) in the X direction (sub scanning direction) Functions well when the amount of expansion and contraction in the X direction of the substrate P is in a relatively small range (for example, within. +-. Several .mu.m).
  • the frequency of the drive signal DFn applied to the optical element for selection OSn largely deviates from the specified frequency fcc.
  • each position of the mark MK1 (MK4) attached to the pattern formation area APF is sequentially measured to sequentially estimate and calculate the characteristic FPX regarding the section in the X direction of the substrate P
  • the result of the characteristic FPX (the amount of superposition error in the X direction) measured just before drawing tends to change significantly as it exceeds the shift-correctable range by the X-shifter mechanism by AOM (selection optical element OSn).
  • the drawing control apparatus 200 of FIG. 8 is shown in FIG.
  • the shift function by the parallel plate HVP is used alone or in combination with the electro-optical X-shifter mechanism by the selection optical element OSn Switches control to so that.
  • encoder measurement is performed while sequentially measuring each characteristic FPX similarly to FIG. 14 by sequentially measuring each position of marks MK1 to MK4 attached to the pattern formation area APF Depending on the position (the movement position of the substrate P in the X direction), the inclination amount of the parallel plate HVP may be changed continuously or stepwise so that the characteristic FPX is corrected.
  • the response (followability) of the mechano-optical X shifter mechanism based on the parallel plate HVP depends on the response characteristic of the servo control of the drive system for tilting the parallel plate HVP.
  • the maximum value (limit value) of the change rate (slope on the graph) in the followable characteristic FPX is determined by the responsiveness of the mechano-optical X shifter mechanism. If the rate of change in the characteristic FPX, which is sequentially obtained by the estimation operation, exhibits a steep change that exceeds the assumed limit value, the mechanooptical X shifter mechanism can not follow. Therefore, in the present embodiment, a mechano-optical X shifter mechanism and an electro-optical X shifter mechanism by the selection optical element OSn are used in combination.
  • FIG. 17A and 17B show a state in which the optical path from the lens system Gu1 of the beam expander system in the drawing unit Un shown in FIG. 2 to the aperture stop NPA is expanded, and the drawing line SLn is shifted by the inclination of the parallel plate HVP.
  • FIG. 17A shows a state in which the parallel incident plane and the exit plane of the parallel plate HVP are 90 degrees to the center line (principal ray) of the beam LBn, that is, the parallel plate HVP is not inclined in the XZ plane It is a figure which shows a state.
  • FIG. 17A shows a state in which the parallel incident plane and the exit plane of the parallel plate HVP are 90 degrees to the center line (principal ray) of the beam LBn, that is, the parallel plate HVP is not inclined in the XZ plane It is a figure which shows a state.
  • FIG. 17A shows a state in which the parallel incident plane and the exit plane of the parallel plate HVP are 90 degrees to the center line (prin
  • 17B shows a state in which the parallel incident plane and the exit plane of the parallel plate HVP are inclined from 90 degrees with respect to the center line (principal ray) of the beam LBn, that is, the parallel plate HVP has an angle It is a figure which shows the state which inclines.
  • the position of the aperture stop NPA is the position of the reflecting surface RP of the polygon mirror PM (or the position of the front focal point of the f ⁇ lens system FT) in the sub scanning direction by the combined optical system of the first cylindrical lens CYa and the lens system Gu3. From the point of view, it is set to be approximately at the position of the pupil.
  • the aperture stop NPA is disposed so as to be optically conjugate to the position of the entrance pupil which is the position of the front focal point of the f ⁇ lens system FT.
  • the central ray of the beam LBn (here, divergent light beam) transmitted through the parallel plate HVP and incident on the lens system Gu2 is minute in the -Z direction with respect to the optical axis AXe.
  • the beam LBn emitted from the lens system Gu2 is translated into a parallel beam, and the central ray of the beam LBn is slightly inclined with respect to the optical axis AXe.
  • the beam LBn parallel light flux
  • the beam LBn that has passed through the circular aperture of the aperture stop NPA is in the sub-scanning direction in the XZ plane with respect to the optical axis AXe in a state where the intensity of the foot of 1 / e 2 on the intensity distribution is accurately cut.
  • the light beam is directed to the combined optical system of the first cylindrical lens CYa and the lens system Gu3 in the latter stage.
  • the aperture stop NPA corresponds to the pupil position when viewed from the reflection surface RP of the polygon mirror PM in the sub-scanning direction. Therefore, the position on the reflective surface RP of the beam LBn (converged in the sub scanning direction) incident on the polygon mirror PM is, according to the inclination angle of the beam LBn having passed through the circular aperture of the aperture stop NPA in the sub scanning direction. Similar to the relationship between the beam LB1 incident on the reflection surface RP and the laterally shifted beam LB1 'described with reference to FIG. 16, the light beam slightly shifts in the Z direction (sub-scanning direction).
  • the beam LBn reflected by the reflecting surface RP of the polygon mirror PM is slightly in the Z direction (sub-scanning with respect to a plane parallel to the XY plane including the optical axis AXf of the f ⁇ lens system FT) Lens system FT while being shifted in the As a result, the spot light SP of the beam LBn projected onto the substrate P can be slightly shifted in the sub-scanning direction by the f ⁇ lens system FT and the second cylindrical lens CYb.
  • the position of the spot light SP (drawing line SLn) on the substrate P can be shifted in the sub scanning direction within about ⁇ several tens of ⁇ m (eg ⁇ 50 ⁇ m)
  • ⁇ m eg ⁇ 50 ⁇ m
  • the length dimension of the actual pattern formation area APF at the time of drawing exposure is It is expanded and contracted by 42 ⁇ m with respect to 420 mm.
  • the superposition can be performed even by using only the mechanooptical X shifter mechanism by the inclination of the parallel plate HVP alone. Accuracy and joint accuracy can be improved.
  • FIG. 18 is a graph for explaining the correction operation of the drawing position in the sub scanning direction by the mechanooptical X shifter mechanism when the substrate P is linearly expanded and contracted over the range of the long dimension of the pattern formation area APF. .
  • the horizontal axis represents the sub-scanning position of the substrate P measured by the encoder system.
  • the lower graph in FIG. 18 shows the range of the major dimension of the pattern formation area APF at the sub-scanning position and the change in the expansion error amount ⁇ xer ( ⁇ m) of the substrate P, and the upper graph in FIG.
  • the mark positions (MK1a to MK1j) shown in FIG. 14 are omitted in FIG. 18, the major dimension of the designed pattern formation area APF is extended by about 42 .mu.m by the linear extension of the substrate P Yes).
  • the error of the linear expansion and contraction (actual expansion error) over the range of the major dimension of the pattern forming area APF is not clean linear in the micron order, It has variation.
  • the actual expansion / contraction error characteristics of the long dimension range of the pattern formation area APF are grasped in advance, and the linear approximation characteristic is determined as in the lower graph of FIG. If it is less than the allowable range (for example, the required superposition accuracy and splice accuracy), the inclination angle ⁇ is zero (neutral position) at the drawing start position as shown in the change characteristic A of the upper graph of FIG.
  • the inclination angle ⁇ of the set parallel flat plate HVP is changed linearly in proportion to the change of the drawing position in the sub scanning direction of the pattern forming area APF so that the inclination angle ⁇ a becomes the drawing end position of the pattern forming area APF. Control.
  • the drawing line SLn of each of the drawing units Un changes the transport direction of the substrate P during the drawing operation from the drawing start position to the drawing end position according to the change width ⁇ f from zero to aa of the inclination angle ⁇ of the parallel plate HVP. It is gradually shifted by an amount of expansion error ⁇ xer (about 42 ⁇ m) in the opposite direction ( ⁇ X direction in FIG. 13) and the + X direction in 13).
  • ⁇ xer about 42 ⁇ m
  • the change width ⁇ f of the inclination angle ⁇ of the parallel flat plate HVP from the drawing start position to the drawing end position is secured.
  • the initial value of the inclination angle ⁇ of the parallel plate HVP can be set arbitrarily.
  • the drawing line SLn can be shifted in the sub-scanning direction by about ⁇ 50 ⁇ m (100 ⁇ m in width) within the stroke range of the inclination angle ⁇ of the parallel plate HVP.
  • the substrate P Since the rotary drum DR is rotated at a constant angular velocity while drawing and exposing a pattern on the pattern formation area APF, the substrate P is transported in the sub-scanning direction at a constant known velocity. Therefore, from the known transport speed of the substrate P and the long dimension (420 mm) of the pattern formation area APF, the required time (number of seconds) from the drawing start position to the drawing end position in FIG. 18 is also known. Therefore, driving of the inclination angle ⁇ ⁇ along the change characteristic A or B of the parallel plate HVP can also be controlled on a time basis.
  • a step motor pulse motor
  • drawing is performed by changing the frequency of the drive pulse (change of drive rate).
  • a change width ⁇ f of the inclination angle ⁇ ⁇ corresponding to the required time (number of seconds) from the start position to the drawing end position can be given.
  • the time required from the drawing start position to the drawing end position is similarly controlled by making the drive amount per unit time constant.
  • drive control of the parallel flat plate HVP in response to a change in the rotational angle position of the rotary drum DR measured in real time by the rotational position detection unit 214 shown in FIG. 8, ie, the movement position of the substrate P in the sub scanning direction, drive control of the parallel flat plate HVP. It is good also as composition which carries out servo control of section 216 (drive source).
  • the movement position information of the substrate P measured in real time by the counter circuit in the rotation position detection unit 214 is sent to the drive control unit 216 via the drawing control device 200 of FIG.
  • the inclination angle ⁇ of the parallel plate HVP may be sequentially changed in proportion to the change of the movement position of the substrate P up to the point.
  • the rotary drum DR is controlled by the drive control unit 210 shown in FIG.
  • the unevenness of the rotational speed is the fluctuation of the moving speed of the substrate P in the sub scanning direction, and is the fluctuation of the drawing position in the sub scanning direction.
  • the fluctuation of the drawing position can be captured as a temporal fluctuation of the rotational angle position of the rotary drum DR (moving position of the substrate P) measured by the rotational position detection unit 214, so the inclination angle ⁇ of the parallel plate HVP is the rotational position If servo control is performed in response to the measurement result of the detection unit 214, the positional error caused by the speed fluctuation of the substrate P (temporal fluctuation of the movement amount) due to the unevenness of the rotational speed of the rotary drum DR is not accumulated.
  • the inclination angle ⁇ of the flat plate HVP can be accurately changed in accordance with the actual long dimension of the pattern formation area APF on the substrate P.
  • the drive control unit 216 drive source
  • the polygon mirror PM rotates 600 revolutions per second, so the origin signal SZn from the drawing unit Un is output as a 4800 Hz pulse waveform.
  • the drive control unit 216 of the parallel plate HVP can not respond to such a high frequency, for example, the timing pulse signal (48 Hz to 16 Hz) obtained by dividing the frequency of the origin signal SZn into 1/100 to 1/300 is shown in FIG.
  • the drive control unit 216 of the parallel flat plate HVP may be servo-controlled at the timing of the cycle of the timing pulse signal.
  • the characteristic FPX in FIG. 19 is a mark detection system by prefetching before each of the odd-numbered drawing units U1, U3, and U5 starts drawing from the drawing head position on the substrate P, as described in FIG. The measurement is made based on the detection positions of the marks MK1a to MK1e detected by the alignment microscope AM1 as a and the movement position (encoder measurement position) of the substrate P measured by the encoder head EH1.
  • the correction characteristic C of position correction in the sub-scanning direction of the drawing line SLn by the mechanical optical X shifter mechanism by the parallel plate HVP is estimated by calculation such as curve fitting and least squares approximation.
  • the correction characteristic C is estimated and calculated under the condition that the differential value (slope) at an arbitrary point on the correction characteristic C does not exceed the response limit (response slew rate) of the drive control unit 216 of the parallel plate HVP. Ru.
  • the difference amount .DELTA.XSb, .DELTA.XSc, .DELTA.XSd, .DELTA.XSe between the measured characteristic FPX of the superposition error amount .DELTA.Xer and the correction characteristic C estimated when operating the mechanical-optical X shifter mechanism by the parallel plate HVP. Is calculated for each of the encoder measurement positions PXb to PXe corresponding to the positions of the marks MK1a to MK1e. The difference amount is zero at the position PXa (the position of the mark MK1a close to the drawing start position).
  • the difference amounts ⁇ XSb, ⁇ XSc, ⁇ XSd, ⁇ XSe are residual components that can not be corrected by the mechanical-optical X shifter mechanism based on the parallel plate HVP, and the difference amounts ⁇ XSb, ⁇ XSc, ⁇ XSd, ⁇ XSe are the graphs on the upper side of FIG. As shown in FIG. 5, correction is performed by an electro-optical X shifter mechanism by the selection optical element OSn. Therefore, when setting the correction characteristic C by estimation calculation, each of the difference amounts ⁇ XSb, ⁇ XSc, ⁇ XSd, ⁇ XSe calculated for each of the positions PXb to PXe is an electro-optical X shifter mechanism by the selection optical element OSn. Is set to be within the shiftable range of the drawing line SLn.
  • the selection element control unit 200A (specifically, the control circuit unit 250 in FIG. 9) in the drawing control device 200 shown in FIG. 8 operates similarly to the setting method of the characteristic FFC shown in FIG. , Correction information .DELTA.FCn corresponding to each of the difference amounts .DELTA.XSb to .DELTA.XSe generated as the substrate PX sequentially moves from the position PXa to the positions PXb, PXc, and PXe (deviation amount from the specified frequency fcc -.DELTA.fcb,- .DELTA.fcc, -.DELTA.fcd, -.DELTA.fce) are generated based on the characteristic Ka or Kb described above with reference to FIG.
  • the correction information ⁇ FCn has the characteristic of the FFC ′ of the frequency modulation degree (frequency correction amount ⁇ fc) of the reference signal RFo from the reference oscillator 260 in synchronization with the change of the encoder measurement position to the positions PXa to PXb.
  • each of the drawing line SLn is formed by using the mechano-optical X shifter mechanism by the parallel flat plate HVP and the electro-optical X shifter mechanism by the selection optical element OSn in combination.
  • the degree of superposition error or splice error can be determined for the size of the spot light SP or pixel, or even for non-linear expansion and contraction in the direction of the long dimension of the pattern formation area APF on the substrate P It is possible to make an order less than that.
  • Correction characteristic C in FIG. 19 is a condition that the differential value (slope) at any point on correction characteristic C does not exceed the response limit (response slew rate) of drive control unit 216 of parallel plate HVP, and And each of the difference amounts ⁇ XSb, ⁇ XSc, ⁇ XSd, ⁇ XSe are estimated and calculated under the condition that they fall within the shiftable range (eg, ⁇ 50 ⁇ m) of the drawing line SLn by the electro-optical X shifter mechanism by the selection optical element OSn. Ru.
  • the nonlinear expansion and contraction specified based on the position detection results of the marks MK1a to MK1e detected by the pre-reading may be extremely large, and the correction characteristic C may not be set without satisfying the conditions.
  • a warning is generated on the basis of the result of the alignment measurement by the pre-reading that the pattern drawing with the correction of the non-linear expansion and contraction is impossible.
  • this warning occurs, either the pattern exposure operation on the pattern formation area APF is stopped or the pattern exposure is performed as it is, and a flag indicating that an exposure error has occurred on the pattern formation area APF Will be left.
  • the parallel plate HVP immediately after correction by the mechanical X shifter mechanism by the parallel plate HVP is performed during exposure of one pattern formation area APF, the next pattern formation area APF is prepared for exposure.
  • the inclination angle ⁇ of the parallel plate HVP is returned to the initial angle.
  • the maximum time required for returning the inclination angle ⁇ of the parallel flat plate HVP at the drawing end position of the pattern formation area APF to the inclination angle ⁇ (initial angle) of the parallel flat plate HVP at the drawing start position it is disposed on the substrate P shown in FIG. 13 in consideration of the time required for changing the inclination angle ⁇ of the parallel plate HVP in the maximum stroke range and the transport speed (sub scanning speed) of the substrate P.
  • the length (margin space length) of the margin portion in the sub scanning direction (longitudinal direction) between the plurality of pattern formation areas APF is set. For example, assuming that the transport speed of the substrate P is 10 mm / sec and the time required for changing the inclination angle ⁇ of the parallel flat plate HVP over the maximum stroke range is 2 seconds, the blank interval length between the plurality of pattern formation areas APF Is set to 20 mm or more.
  • FIG. 8 the axis line Le (Le1 to Le6) of each of the drawing units Un (U1 to U6) shown in FIG. 2, and the drawing line SLn (SL1) shown in FIG.
  • the arrangement of detection areas Vwn (Vw1 to Vw4) of alignment system AMn (AM1 to AM4) shown in FIG. 13 and in FIG. 13 is in the plane (XZ) perpendicular to central axis AXo of shaft Sft of rotating drum DR. In the plane).
  • lines intersecting with central axis AXo through central points in detection areas Vwn (Vw1 to Vw4) of alignment systems AMn (AM1 to AM4) are taken as axis lines LA1 to LA4.
  • Each of axis lines LA1 to LA4 corresponds to the optical axis of the objective lens of each of alignment microscopes AM1 to AM4 as alignment system AMn.
  • the axis lines Le1, Le3 and Le5 of the odd-numbered drawing units U1, U3 and U5 are set at an inclination angle - ⁇ m (deg) with respect to the central plane pcc in the XZ plane, and the even-numbered drawing units U2 , U4 and U6 are set to be inclined at an inclination angle + ⁇ m (deg) with respect to the central plane pcc in the XZ plane. Accordingly, the odd numbered axis lines Le1, Le3 and Le5 and the even numbered axis lines Le2, Le4 and Le6 are installed at an opening angle 2 ⁇ m around the central axis AXo.
  • axis lines LA1 to LA4 of alignment system AMn and axis lines Le1, Le3 and Le5 of odd numbers are installed at an opening angle ⁇ ma (deg)
  • the radius of the surface of the substrate P which is curved in a cylindrical surface shape in intimate contact with the outer peripheral surface of the rotating drum DR which rotates clockwise is Rdd (mm).
  • the radius Rdd may be regarded as substantially the same as the radius of the outer peripheral surface of the rotary drum DR since it is sufficiently small (for example, 1/100 or less) relative to Rdd.
  • odd-numbered drawing A pattern drawn on the substrate P by the line SLn) and a pattern drawn on the substrate P by the even-numbered drawing lines SL2, SL4, and SL6 (hereinafter, also simply referred to as the even-numbered drawing lines SLn)
  • the even-numbered drawing lines SLn In the sub-scanning direction (the moving direction of the substrate P), misalignment occurs.
  • a reference velocity commanded as the moving velocity of the substrate P is Vdo (mm / sec)
  • the rotation speed of the polygon mirror PM of each drawing unit Un and the cycle of the drawing start timing of the spot light for each reflection surface of the polygon mirror PM are the reference time It is set in accordance with To (2 ⁇ m).
  • the entire circumferential length of the outer peripheral surface of the rotary drum DR is 848.229 mm and the circumferential long distance L (2 ⁇ m) is 61.261 mm.
  • the reference velocity Vdo is 10 mm / sec
  • the reference time To (2 ⁇ m) is 6.126 seconds
  • the variation ⁇ Vdw from the reference velocity Vdo occurring during the reference time To (2 ⁇ m) is ⁇ 0.02%
  • the circumferential long distance L ′ (2 ⁇ m) is 61.273 mm or 61.249 mm
  • the error amount ⁇ Ev is about ⁇ 12.25 ⁇ m.
  • the moving speed of the substrate P is the reference speed Vdo (10 mm /
  • An error amount ⁇ Ev of about ⁇ 12 ⁇ m is generated in the movement distance of the substrate P only by changing ⁇ 0.02% from the second. Therefore, the error amount ⁇ Ev is a stitch error in the subscanning direction between the pattern drawn in each of the odd-numbered drawing lines SLn and the pattern drawn in each of the even-numbered drawing lines SLn, or the overlapping with the base pattern. It becomes an alignment error.
  • unevenness in the rotational speed of the rotary drum DR (variation in the movement speed of the substrate P) is sequentially measured by the encoder heads EH1 to EH3 and the rotational position detection unit 214 shown in FIG. Then, the drive control unit 216 of the mechanical X shifter mechanism based on the parallel plate HVP shown in FIG. 8 is servo-controlled so that the error amount .DELTA.Ev generated due to the measured speed fluctuation is reduced.
  • the position measurement result of the substrate P in the sub-scanning direction measured by the counter circuit in the rotational position detection unit 214 is not affected at all.
  • the drive control unit 216 of the parallel plate HVP is servo-controlled according to the measurement value of the position (the rotation angle position of the rotating drum DR) of the substrate P measured by the counter circuit in the rotation position detection unit 214.
  • the pattern drawing is performed on the substrate P in a state in which the generation of the error amount ⁇ Ev due to the fluctuation of the moving speed of the substrate P is also suppressed by the control.
  • the drive control unit 216 by servo-controlling the drive control unit 216 according to the movement position of the substrate P using the encoder heads EH1 to EH3, the change tendency of the rotational speed unevenness generated during one rotation of the rotary drum DR can be Even if there is, it is possible to make the change in the inclination angle ⁇ of the parallel plate HVP follow, as long as it is within the responsive range.
  • the moving speed of the substrate P is The reference speed Vdo is assumed to change by ⁇ Vdw.
  • the movement speed of the substrate P fluctuates during the time To ( ⁇ ma) during which the substrate P moves from the position of the detection area Vw1 to Vw4 of the alignment system AMn to the position of the odd-numbered drawing lines SL1, SL3 and SL5. The same may occur during time To ( ⁇ mb) while moving from the position of the detection area Vw1 to Vw4 to the position of the even-numbered drawing lines SL2, SL4, and SL6.
  • the drive control unit 216 of the mechanical X shifter mechanism by the parallel flat plate HVP may be used as the rotation angle of the rotary drum DR.
  • the mechanical X shifter mechanism by the parallel flat plate HVP and the electro-optical X by the selection optical element OSn It can be used together with the shifter mechanism.
  • the inclination angle ⁇ of the parallel plate HVP is regulated by the maximum stroke that can be changed, and the pattern drawing position (drawing line SLn) by each of the drawing units Un in the sub-scanning direction
  • the correction may reach its limit and no further correction may be possible.
  • the polygon control unit 200B shown in FIG. 8 sets the drawing unit Un in response to the fluctuation of the moving speed of the substrate P in the sub scanning direction or the expansion and contraction of the substrate P in the sub scanning direction.
  • the rotational speed of each polygon mirror PM is controlled to be finely adjusted dynamically from a specified value.
  • the polygon mirror PM When there is no expansion or contraction of the substrate P or a change in moving speed, the polygon mirror PM is set to the effective diameter ⁇ of the spot light SP on the substrate P, one main scan (first scan line) by the spot light SP An interval (for example, ⁇ / 2) in the sub scanning direction on the substrate P with the main scanning (second scanning line), an oscillation frequency Fa of the beam LB from the light source device LS, and the sub scanning direction of the substrate P It rotates at the rotational speed VR which is uniquely set by the reference speed Vdo of movement. Therefore, referring to FIG.
  • the movement speed of substrate P is the reference speed Vdo due to the fluctuation of the rotational speed of rotating drum DR.
  • a method of correcting the rotational speed VR of the polygon mirror PM in the case where it is increased by + ⁇ V dw more than that will be described.
  • the horizontal axis is time
  • the vertical axis is the main scanning position of the spot light SP
  • the substrate P is accurately moved at the reference speed Vdo while the substrate P is accurately moved.
  • a state in which the pattern PTa is exposed by scanning the spot light SP along each of N scanning lines 1, 2,... N-2, N-1, N-1, which are arranged in the scanning direction is shown.
  • the rotational speed VR of the polygon mirror PM is such that the interval (time interval) of each of the N scanning lines 1 to N on the substrate P in the subscanning direction is 1 ⁇ 2 of the diameter ⁇ of the spot light SP.
  • the number of pixels in the sub-scanning direction of the pattern PTa is set to 1/2 of the number N of scanning lines 1 to N.
  • the drawing time from the drawing start point to the end point of the pattern PTa is taken as TS.
  • N scanning lines 1 to N (number of pixels N / Since the drawing time TS according to 2) does not change, the pattern PTa ′ exposed on the substrate P is drawn longer by an error ⁇ Lk than the original dimension (design value) in the sub-scanning direction.
  • the dimension error ⁇ Lk is 50 ⁇ m . This means that the spacing in the sub-scanning direction on the substrate P of each of the N scanning lines 1 to N is increased by the fluctuation rate ⁇ v with respect to the original design spacing.
  • the design drawing time TS on the design of the pattern PTa corresponds to the correction time .DELTA.Tss corresponding to the drawing time of the error .DELTA.Lk corresponding to the increase of the moving speed of the substrate P by + .DELTA.Vdw. It is corrected to become the shortened drawing time TS '.
  • the correction time .DELTA.Tss corresponding to the drawing time of the error .DELTA.Lk corresponding to the increase of the moving speed of the substrate P by + .DELTA.Vdw. It is corrected to become the shortened drawing time TS '.
  • the horizontal axis is time
  • the vertical axis is the main scanning position of the spot light SP
  • the substrate P is moving at a speed faster than the reference speed Vdo by ⁇ V dw (drawing time TS (D)
  • the pattern PTa (number of pixels N / 2) is exposed by scanning the spot light SP along each of N scanning lines 1 to N aligned in the sub scanning direction based on drawing data. Show. Therefore, as shown in FIG. 21B, N scanning lines 1 to N (number of pixels N / 2) are used for drawing during the drawing time TS ′ ( ⁇ TS).
  • the rotational speed VR of the polygon mirror PM is controlled so that the interval in the sub-scanning direction on each of the substrates 1 to N in the sub scanning direction is reduced by the fluctuation rate ⁇ v (%) with respect to the original designed interval. %) Should be increased. If the moving speed of the substrate P is increased by 0.05% with respect to the reference speed Vdo as in the above numerical example, the rotational speed VR of the polygon mirror PM may also be increased by 0.05%. Conversely, when the moving speed of the substrate P is decreased by ⁇ Vdw with respect to the reference speed Vdo, the rotation speed VR of the polygon mirror PM may also be decreased by the fluctuation rate ⁇ v (%). This corresponds to increasing or decreasing the rise time interval Trp of the waveform repeatedly generated in the pulse shape of the origin signal SZn shown in FIG. 12 by the fluctuation rate ⁇ v (%).
  • the polygon control unit 200B in FIG. 8 that controls the rotation of the polygon mirror PM includes a PLL (Phase Locked Loop) servo control system that precisely drives the motor RM at a rotational speed synchronized with the frequency (phase) of the clock signal.
  • the control accuracy is about ⁇ several rpm. Therefore, when the rotational speed VR as the reference of the polygon mirror PM is 36000 rpm, the speed can be adjusted with an accuracy of about ⁇ 0.02%.
  • the polygon mirror PM which requires high-speed rotation, is made of a light alloy (such as aluminum) or a ceramic base material so that the thickness in the direction of the rotation axis is several mm or less.
  • the control response (time constant) at the time of changing the speed is sufficiently shorter than the change rate of the fluctuation of the rotational speed of the rotating drum DR (the fluctuation of the moving speed of the substrate P). Therefore, if it is possible to measure the fluctuation of the moving speed of the substrate P in the sub scanning direction (the fluctuation of the rotational speed of the rotating drum DR) characteristics with predetermined accuracy, the rotational speed of the polygon mirror PM is made to follow dynamically.
  • the long dimension of the pattern formation area APF exposed on the substrate P, or the dimension in the sub-scanning direction of the individual pattern drawn in the pattern formation area APF is influenced by the fluctuation of the movement speed of the substrate P That is, the generation of pattern drawing magnification error in the sub-scanning direction is suppressed, and control is performed so as to have a predetermined size.
  • the polygon mirror PM rotates even without using the mechanical X shifter mechanism by the parallel plate HVP.
  • the velocity correction makes it possible to correct the misalignment. Further, even if it is found from the measurement result of the mark position using alignment system AMn that the expansion and contraction in the sub scanning direction of substrate P itself is large, the correction of the rotational speed of polygon mirror PM is performed on substrate P as well. The superposition accuracy with the pattern of the base layer being formed can be well maintained.
  • the correction mechanism by the dynamic adjustment of the rotation speed of the polygon mirror PM and the mechanical X shifter mechanism by the parallel plate HVP (or the electro-optical X shifter mechanism by the selection optical element OSn) in combination. It is possible. In that case, the actual movement of the substrate P during one rotation of the rotary drum DR is shown as exaggeratedly in the graph of FIG. 22 where the horizontal axis represents the rotational angle position of the rotary drum DR and the vertical axis represents the moving speed of the substrate P.
  • the rotational speed VR of the polygon mirror PM is corrected by the variation rate ⁇ v.
  • mechanical error due to the parallel plate HVP is obtained for the speed error ⁇ Vpp from the average speed Vdr of the actual moving speed of the substrate P, which occurs due to the periodic rotational speed fluctuation (speed unevenness) every rotation of the rotary drum DR.
  • the correction may be made by the correction by the X shifter mechanism (or the electro-optical X shifter mechanism by the selection optical element OSn).
  • the velocity error ⁇ Vpp tends to periodically change with small amplitude around the average velocity Vdr, so that the inclination angle ⁇ of the parallel plate HVP can be used within the range of the stroke that can be inclined. it can.
  • FIG. 23 is a graph for explaining an example of a method of measuring the variation of the moving speed of the substrate P when dynamically adjusting the rotational speed of the polygon mirror PM by following the variation of the moving speed of the substrate P
  • the horizontal axis represents a time axis (seconds)
  • the vertical axis represents a rotational position detection unit 214 corresponding to any one of the encoder heads EH2 and EH3 that measures the rotational angular position of the rotary drum DR (moving position of the substrate P).
  • the encoder measurement value DEn detected by the counter circuit (see FIG. 8) is represented.
  • FIG. 8 The encoder measurement value DEn detected by the counter circuit
  • the times Tc0, Tc1, Tc2,..., Tc9 set every fixed time ⁇ TC (for example, 5 seconds) along the time axis are samplings obtained by counting clock pulses of an accurate clock signal. Indicates the timing.
  • the straight line having a constant inclination in FIG. 23 indicates a reference characteristic Fvo corresponding to the reference speed Vdo commanded as the movement speed of the substrate P, and the actual characteristic FVr is a part of the actual movement speed characteristic shown in FIG.
  • time Tc0 is set as the drawing start time at which the drawing line SLn by the drawing unit Un matches the drawing start position of the pattern drawing area APF.
  • the rotational position detection unit 214 in FIG. 8 samples (stores) the encoder measurement values DE0, DE1, DE2, ..., DE9, ... at that time point from time Tc0 to time Tc9, ... .
  • the change amount of the encoder measurement value (movement amount of the substrate P) ⁇ DEr during the fixed time ⁇ TC is constant anywhere from time Tc1 to Tc9.
  • the drawing control device (drawing control unit) 200 or the rotational position detection unit 214 of FIG. 8 functioning as a velocity error measuring unit measures encoder measurement values DE0, DE1, DE2,.
  • n is an integer of 1 or more.
  • ⁇ vn [ ⁇ DE (n) -DE (n-1) ⁇ / ⁇ DEr-1] / 100
  • FIG. 24 is a graph of an example in which the variation rates ⁇ vn sequentially obtained by such an operation are plotted along the time axis in the order of ⁇ v1, ⁇ v2, ⁇ v3 ..., ⁇ v9.
  • the horizontal axis represents time (seconds) on the same scale as the horizontal axis in FIG. 23, and the vertical axis represents the fluctuation rate ⁇ vn (%).
  • the moving speed of the substrate P is increased by about + 0.045% with respect to the reference speed Vd0 at time Tc0 of the drawing start point, and then the moving speed decreases gradually, and is approximately at time Tc6.
  • the drawing control device (drawing control unit) 200 of FIG. 8 is sequentially corrected corresponding to the variation rates .beta.v1, .beta.v2, .beta.v3... Measured at each of the times Tc1, Tc2, Tc3,.
  • the command value for rotational speed correction is output to the polygon control unit 200B so that the polygon mirror PM rotates at the above rotational speed.
  • the polygon mirror PM of each of the six drawing units U1 to U6 maintains the phase relationship of the rotation angle among them in a predetermined state (for example, a difference of 15 ° in the rotation angle of the reflection surface)
  • the rotational speed correction is performed so that the rotational speeds are always equal.
  • the drawing beam LB emitted from one light source device LS is switched to be supplied to any one of the six drawing units U1 to U6 by time division, but Two light source devices LS are provided, and the first light source device LS performs time-division switching to any one of three drawing units U1, U3, U5 (odd-numbered) to supply a beam LB for drawing
  • the second light source device LS may be time-divisionally switched to any one of the three drawing units U2, U4, U6 (even number) to supply the drawing beam LB.
  • the polygon control unit 200B keeps the rotational speed equal at all times while maintaining the phase relationship of the rotational angle between the polygon mirrors PM of the odd-numbered drawing units U1, U3, and U5 in a predetermined state.
  • the rotational speed is corrected so that the rotational speed is always equal while correcting the rotational speed and keeping the phase relationship of the rotational angle between the polygon mirrors PM of the even-numbered drawing units U2, U4, and U6 in a predetermined state. to correct.
  • the encoder measurement value DEn for obtaining the fluctuation rate ⁇ vn as shown in FIGS. 23 and 24 is a measurement value by the encoder head EH2 shown in FIG. 13 for each of the odd-numbered drawing units U1, U3 and U5.
  • the measurement value by the encoder head EH3 shown in FIG. 13 may be used for each of the even-numbered drawing units U2, U4, and U6.
  • FIG. 25 As in FIGS. 23 and 24, the variation rate ⁇ vn of the moving speed of the substrate P is not determined by software calculation, but the variation of the moving speed of the substrate P is measured in substantially real time with a hardware configuration.
  • the circuit block diagram for this is shown.
  • the circuit configuration of FIG. 25 is provided in the drawing control apparatus (drawing control unit) 200 shown in FIG. 8 or in the rotational position detecting unit 214, and the rotational position detecting unit using at least one of the encoder heads EH1 to EH3.
  • a difference value between the frequency of the encoder pulse counted by the counter circuit unit in 214 and the frequency of the clock pulse generated at the frequency corresponding to the command value of the moving speed of the substrate P is measured in real time.
  • Each of the encoder heads EH1 to EH3 shown in FIG. 13 (or FIG. 8) generates an up pulse signal UpP and a down pulse signal DnP which are generated with a phase difference of 90 ° with the movement of the scale of the scale member ESD.
  • the zero pulse signal ZR for zero reset is generated.
  • Counter circuit 300 provided in rotational position detection unit 214 increases measured value (count value) 300A in response to up pulse signal UpP, decreases measured value 300A in response to down pulse signal DnP, and causes zero pulse.
  • the measured value 300A is reset to zero.
  • the measured value 300A of the counter circuit 300 is output as address information to the correction map memory unit 302 via, for example, a 24-bit parallel data bus.
  • the correction map memory unit 302 responds to the change of the measured value 300A to real-time the error (eccentricity error, roundness error, graduation pitch error, measurement Abbe error, etc.) over one rotation of the scale member of the scale member ESD.
  • the position information 302A corresponding to the rotational angle position (moving position of the substrate P) corrected to is sequentially output as 24-bit parallel data having the same resolution as that of the measurement value 300A.
  • the signal (pulse) of the least significant bit (LSB) of the 24-bit position information 302A is converted into an appropriate frequency band by the divider circuit 304, and is up / down (U / D) as a pulse signal 304A. It is applied to the up count input of the counter circuit 306.
  • the pulse signal 304A has a frequency corresponding to the moving speed of the scale of the scale member ESD, that is, the moving speed of the substrate P.
  • the divider circuit 304 may be omitted, and the LSB signal of the position information 302A may be directly applied to the U / D counter circuit 306 as a pulse signal 304A.
  • the U / D counter circuit 306 responds to the command information 306B from the drawing control device 200 to set either the count value which can be successively changed by the counting operation or the fixed value of zero as the fluctuation information 306A to the polygon control unit 200B.
  • Output to The clock pulse signal 308 A from the variable clock generation circuit 308 is applied to the downcount input of the U / D counter circuit 306.
  • the variable clock generation circuit 308 inputs speed information 308B corresponding to the moving speed of the substrate P generated by the drawing control device 200 (for example, the reference speed Vdo shown in FIG. 22 or the average speed Vdr of the actual moving speed characteristics).
  • the clock pulse signal 308A is generated so as to have the same frequency as the pulse signal 304A output when the substrate P is precisely moving at the same speed as the reference speed Vdo or the average speed Vdr. Therefore, the frequency of the clock pulse signal 308A changes in accordance with the designated moving speed (the reference speed Vdo or the average speed Vdr) of the substrate P.
  • the U / D counter circuit 306 immediately before the drawing start position of the pattern forming area APF reaches the drawing line SLn. Based on the command information 306B, the pulse signal 304A applied to the up-count input and the clock pulse signal 308A applied to the down-count input are switched to the active state to sequentially count.
  • the count value (variation information 306A) counted by the U / D counter circuit 306 is substantially constant (eg, zero) Or stable near zero).
  • the count value of the fluctuation information 306A from the U / D counter circuit 306 gradually increases, and the reverse If it is slightly slow, the count value which is the fluctuation information 306A from the U / D counter circuit 306 gradually decreases.
  • the polygon control unit 200B changes the motor RM so that the rotational speed of the polygon mirror PM is increased or decreased according to the increase or decrease of the fluctuation information 306A (count value, measurement value) from the U / D counter circuit 306. Servo control. After the delay time of the response time (a few milliseconds to a few tens of milliseconds) of the servo control, it is considered that the increase or decrease of the rotational speed of the polygon mirror PM is completed, and the drawing control device 200 corresponds to the increase or decrease. Then, an offset is added to the speed information 308B applied to the variable clock generation circuit 308 to increase or decrease the frequency of the clock pulse signal 308A.
  • the frequency of the pulse signal 304A applied to the up count input of the U / D counter circuit 306 is increased or decreased (increase or decrease of the moving speed of the substrate P).
  • the frequency of the clock pulse signal 308A applied to the downcount input of the U / D counter circuit 306 is also increased / decreased (the rotational speed of the polygon mirror PM is increased / decreased), resulting in fluctuation from the U / D counter circuit 306.
  • Information 306A is controlled to stabilize at a substantially constant value.
  • the diameter of the scale of the scale member ESD (twice the radius from the central axis AXo) is the same as the diameter of the outer peripheral surface of the rotating drum DR, and the moving speed of the substrate P in the subscanning direction (reference speed Vdo Alternatively, when the average velocity Vdr) is set to 10 mm / sec, the scale of the scale member ESD also moves circumferentially at 10 mm / sec.
  • the measurement resolution defined by the least significant bit (LSB) of the 24-bit position information 302A output from the correction map memory unit 302 is 0.2 ⁇ m
  • the frequency of the LSB signal is 50 KHz (10 mm / 0. 2 ⁇ m).
  • the upcount input of the U / D counter circuit 306 The frequency of the applied pulse signal 304A fluctuates ⁇ 10 Hz (10 pulses per second). Since the initial frequency of the clock pulse signal 308A applied to the downcount input of the U / D counter circuit 306 is set to 50 KHz corresponding to the reference speed Vdo or the average speed Vdr, the fluctuation from the U / D counter circuit 306
  • the information 306A is a count value that increases or decreases by 10 counts per second when the variation rate ⁇ of the movement speed of the substrate P is ⁇ 0.02%.
  • the polygon control unit 200B sequentially monitors the amount of increase / decrease of the fluctuation information 306A per unit time (for example, 0.5 seconds, 1 second, or several seconds), for example, 0.02% ⁇ (1 second
  • the variation rate ⁇ v of the moving speed of the substrate P is obtained by a simple calculation such as increase / decrease amount / 10) of the variation information 306A, and the rotation speed of the polygon mirror PM is increased or decreased by the variation rate ⁇ v.
  • the polygon control unit 200B draws control device 200
  • the offset is added to the speed information 308 B applied to the variable clock generation circuit 308.
  • the fluctuation information 306A from the U / D counter circuit 306 stably transitions to the count value at that time.
  • the U / D counter circuit 306 follows the speed variation of the movement speed of the substrate P in the sub scanning direction due to the variation of the rotation speed of the rotating drum DR. It is also a follow-up determination circuit that determines whether the rotational speed VR of the polygon mirror PM is corrected (normally servo-controlled). Therefore, if the fluctuation information 306A (count value) from the U / D counter circuit 306 is stable at a predetermined value without greatly increasing or decreasing with time, the following servo control is performed well.
  • a mechanism for applying tension in the longitudinal direction to the substrate P is provided on the upstream side or downstream side of the rotary drum DR with respect to the transport direction of the substrate P
  • the substrate P is closely supported on the outer peripheral surface of the rotary drum DR with a predetermined tension.
  • the tension servo mechanism the time constant, etc.
  • the magnitude of the tension applied to the substrate P may change significantly in a transient response in a short time (seconds), and is affected by that.
  • the rotational speed of the rotary drum DR tends to fluctuate randomly.
  • the fine adjustment of the rotation speed of the polygon mirror PM or the combined use with the mechanical-optical X shifter mechanism (parallel plate HVP) shown in FIG. It is possible to suppress the deterioration of the quality of the drawing pattern, the deterioration of the overlaying accuracy with respect to the underlayer, the deterioration of the splicing accuracy, and the like which occur due to the random fluctuation of the moving speed in the sub scanning direction.
  • the substrate stage is placed (sucked) in a flat state on a flat substrate holder of a substrate stage (substrate moving member) moving in a two-dimensional manner in the XY plane, not a long sheet of substrate P.
  • a direct-writing exposure apparatus configured to scan the spot light beam SP of the beam LBn from the drawing unit Un in the main scanning direction while moving at a constant velocity in the sub scanning direction, measurement by a length measuring interferometer measuring the position of the substrate stage
  • the speed change of the substrate table is similarly made by fine adjustment of the rotation speed of the polygon mirror PM, or by the combination of a mechanical optical X shifter mechanism (parallel plate HVP).
  • the beam LBn spot light SP
  • the substrate P may be relatively moved at a predetermined speed in the sub scanning direction.
  • the drawing line SLn of the drawing unit Un The dimension in the main scanning direction of the region to be drawn by the image is expanded or contracted according to the rate of change of the rotational speed VR of the polygon mirror PM.
  • the right side shows an example of the variation rate ⁇ v of the moving speed of the substrate P
  • the left side dynamically fine-tunes the rotational speed VR of the polygon mirror PM according to the variation rate ⁇ v of the moving speed of the substrate P
  • the state when a pattern is drawn on the substrate P by one drawing unit U1 (drawing line SL1) is exaggeratedly shown.
  • the spot light SP projected from the drawing unit U1 onto the substrate P is scanned in the -Y direction along the drawing line SL1, as shown in FIG.
  • FIG. 26 as an example, among the scanning loci of the spot light SP scanned along the drawing line SL1 for each reflecting surface RP of the polygon mirror PM, as in 1, 40, 80,.
  • the rotation speed VR (rpm) of the polygon mirror PM is set to the reference speed while the substrate P is accurately moved at the designated speed (reference speed Vdo or average speed Vdr) and the fluctuation rate ⁇ v is zero (%)
  • the effective drawing range that can be drawn along the drawing line SL1 is the effective scan length LT (for example, 50 mm). Assuming that the size of one pixel set to about the same as the effective size ⁇ of the spot light SP is 2 ⁇ m square, the effective scanning length LT (50 mm) is configured with 25000 pixels.
  • each of the scanning loci 1 to 880 shown in FIG. 26 dynamically adjusts the rotational speed VR of the polygon mirror PM in accordance with the fluctuation rate .beta.v of the moving speed of the substrate P, the beam from the light source device LS
  • the variation of the effective scan length LT when drawing a pattern under an initial constant frequency without dynamically correcting the oscillation frequency Fa (period Tf) of LB is schematically represented in an exaggerated manner. For example, when the variation rate ⁇ v of the movement speed of the substrate P becomes + 0.02%, the rotational speed VR of the polygon mirror PM is increased by 0.02% following the variation rate ⁇ v.
  • the rotational speed VR of the polygon mirror PM is reduced by 0.01% following the variation rate ⁇ v.
  • the frequency set in is kept as it is, the dimension in the main scanning direction of each of 25,000 pixels included in the effective scanning length LT drawn corresponding to the period Tf on the substrate P is shrunk by 0.01% (reduction)
  • the effective scan length LT is reduced by 0.01% in the vicinity of the scan locus 800 in FIG. That is, a dimensional error in the main scanning direction of a pattern drawn on the substrate P, that is, an error of so-called drawing magnification occurs.
  • the rotational speed VR (rpm) of the polygon mirror PM is increased or decreased corresponding to the fluctuation rate .beta.v of the movement speed of the substrate P, and the light source corresponding to the increase or decrease of the rotational speed VR (rpm).
  • the control circuit 120 in the light source device LS shown in FIG. 7 controls the signal generation unit 120a that generates the clock signal LTC so as to finely adjust the oscillation frequency Fa (period Tf) of the beam LB from the device LS. .
  • the cumulative addition value of stable clock pulses from the crystal oscillator is used as the address value.
  • a direct digital synthesizer (DDS) circuit that reads out sine wave waveform data in a ROM (Read Only Memory) and generates a sine wave signal by a DA (Digital-Analog) converter, the sine wave signal is input and desired
  • the circuit configuration of the frequency variable clock generator combining the PLL synthesizer circuit which outputs the clock signal LTC of the frequency of.
  • a circuit configuration may be provided such that one period (Tf) of the clock signal LTC is shortened or expanded by a fixed percentage (%) at each of a plurality of time points.
  • the signal generation unit 120a provided with such a circuit configuration functions as a magnification adjustment unit that adjusts the drawing magnification in the main scanning direction, and responds to the fluctuation rate ⁇ v of the movement speed of the substrate P at the rotation speed VR of the polygon mirror PM.
  • the frequency of the clock signal LTC is increased or decreased, or the period Tf of the clock signal LTC is partially increased or decreased.
  • the variation rate ⁇ v of the moving speed of the substrate P becomes + 0.02%
  • the rotational speed VR of the polygon mirror PM is increased by 0.02% following the variation rate ⁇ v and the light source LS
  • the oscillation frequency Fa of the beam LB is also increased by 0.02% (the period Tf is reduced by 0.02%).
  • the rotational speed VR of the polygon mirror PM is reduced by 0.02% following the variation rate ⁇ v and the light source device
  • the oscillation frequency Fa of the beam LB from LS is also reduced by 0.02% (the period Tf is increased by 0.02%).
  • the fluctuation rate ⁇ v of the movement speed of the substrate P is simply the speed measurement unit (the head portions EH1 and EH2 in FIG. 8 and the rotation position that measure the movement speed of the substrate movement member (rotation drum DR, substrate stage) It is obtained by the detection unit 214).
  • the speed measurement unit the head portions EH1 and EH2 in FIG. 8 and the rotation position that measure the movement speed of the substrate movement member (rotation drum DR, substrate stage) It is obtained by the detection unit 214.
  • a plurality of marks MK1 and MK4 are formed on the substrate P at regular intervals in the sub scanning direction, and the pattern drawing position (especially in the sub scanning direction) with reference to those marks MK1 and MK4.
  • the rotation speed VR of the polygon mirror PM may be dynamically changed based on the characteristic FPX shown in FIG.
  • a drawing unit Un having a polygon mirror PM and a scanning optical system (f ⁇ lens system FT), and a substrate moving member (rotary drum DR for moving the substrate P at a predetermined speed along the sub scanning direction (X direction) And an alignment system (AMn) for sequentially detecting each of a plurality of marks MK1 and MK4 formed at predetermined intervals on the substrate P along the sub scanning direction, and measuring the movement position of the substrate moving member
  • An error measurement unit that measures an error (characteristic FPX in FIG.
  • the polygon mirror PM When the mechanooptical X shifter mechanism by the parallel flat plate HVP in the drawing unit Un or the electrooptical X shifter mechanism by the selection optical element OSn is operated, the polygon mirror PM The beam LBn projected onto the reflecting surface RP is slightly displaced in the direction (sub-scanning direction) of the rotation center axis AXp of the polygon mirror PM.
  • the base material of this type of polygon mirror PM is made of aluminum or the like, and the reflective surface RP is a protective film (antioxidant film) having a high reflectance with respect to the ultraviolet wavelength range after the surface of the aluminum is optically polished and flattened. , Dielectric multilayer film etc.).
  • the polygon mirror PM rotates at a high speed, dust of several microns to several tens of microns floating in the atmosphere comes in contact with the reflective surface RP and rubs, and the protective film is gradually damaged during long-term use. There is also a case to receive.
  • the reflectance of the reflective surface RP may decrease because the drawing beam LBn is in the ultraviolet wavelength range.
  • the reflectance of each of the eight reflection surfaces RP uniformly decreases in the surface, it is possible to suppress the decrease in the exposure amount only by increasing the intensity of the beam LB from the light source device LS.
  • the intensity of the beam LB from the light source device LS Unevenness of the exposure amount of the pattern to be drawn can not be corrected for each of the drawing units Un by merely adjusting.
  • the tendency of the intensity fluctuation of the beam LBn (spot light SP) due to the positional unevenness of the average reflectance and the reflectance in the reflection surface is sometimes made for each reflection surface RP of the polygon mirror PM.
  • the correction information .DELTA.ACn from the control circuit unit 250 shown in FIG. 9 is used to measure the intensity of the beam LBn for drawing at high speed by adjusting the diffraction efficiency by the selection optical element OSn. Control the amplitude.
  • FIG. 27 is a perspective view showing a drawing beam LBn that is projected onto one reflection surface RP of the eight polygon mirror PM and is reflected there and directed to the f ⁇ lens system FT.
  • AXg is an optical axis of the lens system Gu3 shown in FIG. 2
  • AXf is an optical axis of the f ⁇ lens system FT.
  • the beam LBn projected onto the reflective surface RP along the optical axis AXg is formed on the reflective surface RP by the combined system of the cylindrical lens CYa and the lens system Gu3 in FIG.
  • the light collecting spots SPs extend in a slit shape with respect to a parallel plane).
  • a dimension (referred to as a long side dimension for convenience) of one reflection surface RP of the polygon mirror PM is Lpm, and a dimension with respect to the subscanning direction (the direction of the rotation center axis AXp and parallel to the Z axis)
  • Hpm for convenience, the short side dimension
  • Hpm the dimension Lsp in the main scanning direction of the slit-like focused spot SPs and the dimension Hsp in the subscanning direction are set to Lsp ⁇ Lpm and Hsp ⁇ Hpm, respectively.
  • the slit-like focused spot SPs is in the sub scanning direction Center on the reflective surface RP with respect to the Z-axis direction).
  • the mechanical-optical X shifter mechanism by the parallel plate HVP or the electro-optical X shifter mechanism by the selection optical element OSn is operated, the focused spot SPs is on the reflection surface RP. In the sub-scanning direction (Z-axis direction).
  • the electro-optical X shifter mechanism by the selection optical element OSn has a small shiftable range due to the characteristics of the selection optical element OSn, and the focused spot SPs has a margin within the short side dimension Hpm of the reflection surface RP. Holds a slight shift in the sub-scanning direction.
  • the mechanically-optical X-shifter mechanism based on the parallel flat plate HVP when the tilt angle ⁇ of the parallel flat plate HVP is increased from the neutral position, the focused spot SPs shifts in the sub scanning direction It is used in the range which does not protrude from dimension Hpm.
  • the condensing spot SPs projected onto one reflective surface RP is an angle (45 ° / ⁇ ) corresponding to the scanning efficiency 1 / ⁇ within a 45 ° rotation angle. While rotating, it moves on the reflective surface RP in the main scanning direction (the direction of the long side dimension Lpm). That is, the dimension Lsp in the main scanning direction of the focused spot SPs is set so as not to protrude from the long side dimension Lpm of the reflecting surface RP while the polygon mirror PM rotates by the angle (45 ° / ⁇ ).
  • the dimension Lsp in the main scanning direction of the focused spot SPs defines the numerical aperture (NA) in the main scanning direction of the beam LBn focused as the spot light SP on the substrate P by the subsequent f ⁇ lens system FT,
  • NA numerical aperture
  • the effective size ⁇ of the spot light SP projected onto the substrate P can be reduced by increasing the numerical aperture, ie, increasing the dimension Lsp of the focused spot SPs.
  • the dimension Lsp of the focused spot SPs is determined based on the effective size ⁇ of the spot light SP required on the substrate P, the focal length of the f ⁇ lens system FT, and the wavelength of the beam LBn.
  • the entire focused spot SPs performs main scanning
  • the long side dimension Lpm of the reflective surface RP is set so as to satisfy the relationship of not protruding from one reflective surface RP in the direction.
  • the slit-like focused spot SPs is a polygon mirror Not only moving on one reflective surface RP of PM over the long side dimension Lpm in the main scanning direction, but also moving on the short side dimension Hpm in the sub scanning direction, the entire surface of the reflective surface RP
  • the exposure amount of the pattern drawn on the substrate P is partially reduced due to the reflection unevenness.
  • FIG. 28 shows an example of the reflecting surface RP in a state where the reflectance is partially changed, and the reflecting surface RP moves from right to left with respect to the focused spot SPs in FIG. 28 by the rotation of the polygon mirror PM. Do. Therefore, when viewed in the reflecting surface RP, the focused spot SPs moves from left to right across the long side dimension Lpm of the reflecting surface RP.
  • FIG. 28 exemplifies the reflection unevenness portion DB1 and the reflection unevenness portion DB2 as the portion where the reflectance is lowered.
  • the uneven reflection portion DB1 becomes a thin film when the lubricant (oil, grease) or the like used in the drive mechanism or the movable mechanism in the drawing unit Un is dispersed as mist, for example.
  • the uneven reflection portion DB2 represents, for example, a state in which the lower side (negative side of the Z axis) of the reflective surface RP is deteriorated in the protective film coated on the surface of the reflective surface RP due to aging. ing.
  • the focused spot SPs moves from left to right over the long side dimension Lpm of the reflecting surface RP within the drawing time TSn (see FIG. 12) during one deflection scan of the beam LBn by the reflecting surface RP. .
  • the light collecting spot SPs when pattern drawing is performed in a state where the light collecting spot SPs is located at the center (approximately the center of the short side dimension Hpm) on the reflective surface RP in the sub scanning direction, the light collecting spot SPs is Immediately after the start of the time TSn, irradiation of the uneven reflection portion DB1 in the reflective surface RP starts, and after the midpoint of the drawing time TSn, irradiation is performed so as to cover the entire uneven reflection portion DB1. If such uneven reflection portion DB1 exists on the reflective surface RP, the intensity (illuminance) of the spot light SP projected onto the substrate P depends on the degree of decrease in the reflectance at the uneven reflection portion DB1. For example, the characteristic INa shown in FIG.
  • the reflection as shown in FIG. FIG. 29A is a graph showing an example of the intensity change of the spot light SP scanned on the surface RP
  • the characteristic INa of FIG. 29A is an example of the intensity change of the spot light SP due to the influence of only the uneven reflection portion DB1 in FIG. Is a graph showing In FIG. 29A, the vertical axis represents the intensity (illuminance) of the spot light SP, and the horizontal axis represents time.
  • the intensity of the spot light SP on the substrate P which is obtained when there is no portion where the reflectance decreases while the focused spot SPs moves in the main scanning direction on the reflective surface RP, is defined by the specified value Inr (the photosensitive layer of the substrate P It is assumed that the intensity value for giving a proper exposure amount). Due to the influence of the uneven reflection portion DB1 on the reflective surface RP shown in FIG. 28, the intensity of the spot light SP becomes the specified value Inr immediately after the start of scanning within the drawing time TSn, but after the intermediate time point of the drawing time TSn Gradually decreases, and at the end of the drawing time TSn is attenuated from the specified value Inr by ⁇ Ina. If the intensity of the spot light SP is out of the allowable range required to give the photosensitive layer an appropriate amount of exposure, the pattern drawn within the drawing time TSn will be underexposed and the pattern quality will be significantly degraded.
  • the condensed spot SPs is displaced in the ⁇ Z direction in the sub scanning direction on the reflecting surface RP of FIG. 28 by the operation of the mechanical-optical X shifter mechanism by the parallel plate HVP, and the most within the short side dimension Hpm. If it is located on the lower side, the intensity of the spot light SP is specified at the start of scanning within the drawing time TSn, as shown by the characteristic INb in FIG. It starts with a value significantly lower than the value Inr, and tends to gradually increase with the lapse of the drawing time TSn. In the case of the characteristic INb, the intensity of the spot light SP is lowest at the start time of the drawing time TSn, and is reduced from the specified value Inr by the attenuation amount ⁇ Inb.
  • the condensed spot SPs is located on the upper portion (+ Z direction side) on the reflective surface RP by the operation of the mechanical-optical X shifter mechanism by the parallel flat plate HVP.
  • the intensity of the spot light SP within the drawing time TSn is stable at a substantially prescribed value Inr like the characteristic INb 'while being continuously displaced from the) to the central portion as shown in FIG.
  • the intensity of the spot light SP is approximately at the specified value Inr within the drawing time TSn. From the stable state (characteristic INb '), it gradually shifts to the characteristic INb in FIG. 29 (B).
  • the characteristic of the intensity change of the spot light SP within the drawing time TSn is obtained by the operation of the mechanical-optical X shifter mechanism by the parallel plate HVP. If the intensity of the spot light SP fluctuates over the allowable range where the appropriate exposure amount can be obtained due to the influence of the uneven reflection portion on the reflective surface RP, the intensity fluctuation is also corrected.
  • the correction information ⁇ ACn output from the control circuit unit 250 shown in FIG. 9 is generated, and the diffraction efficiency is adjusted by amplitude control (amplitude modulation) of the drive signal DFn of the selection optical element OSn to adjust the intensity of the drawing beam LBn. Correct at high speed.
  • the selection optical element OSn, the circuit unit CCBn in FIG. 9, the control circuit unit 250, and the like function as an intensity adjustment unit that corrects the intensity of the beam LBn.
  • the intensity change characteristic of the spot light SP due to the influence of the uneven reflection portion of each reflection surface RP of the polygon mirror PM is determined by any of the following three measurement methods (first to third measurement methods).
  • data (correction curve characteristics) for the correction information ⁇ ACn is generated for each of the reflecting surfaces RP of the polygon mirror PM.
  • a measurement pattern such as a resolution chart arranged at a constant interval (for example, an interval of 1/10 of the effective scan length LT) within the effective scan length LT along the drawing line SLn is
  • test printing is performed for each reflection surface RP of the polygon mirror PM while changing the mechanical-optical X shifter mechanism by HVP stepwise within the strokeable range.
  • a sheet substrate having a photosensitive layer formed thereon is wound around and tightly fixed to the outer peripheral surface of the rotary drum DR.
  • the sheet substrate may be made of the same material as the long substrate P, but in order to reduce deformation when winding on the rotary drum DR, the rigidity (Young's modulus) is substantially the same as the thickness of the substrate P.
  • FIG. 30 schematically shows an example of the arrangement of test patterns drawn by one drawing unit Un on a sheet substrate (hereinafter, referred to as a test substrate P ′) prepared for test exposure. It is a thing.
  • Ten measurement pattern areas TE0, TE1, TE2 arranged at regular intervals in the main scanning direction (Y direction) within the effective scanning length LT (maximum range in which pattern drawing can be performed) of the spot light SP by the drawing unit Un ,... TE9 (collectively referred to as TEj) are provided.
  • each of the rectangular measurement pattern areas TEj on the test substrate P ′ are about 1 mm square to 2 mm square, and when the effective scanning length LT is 50 mm, the measurement pattern areas TE 0 on both end sides in the Y direction
  • Each center point of TE9 is disposed about 2.5 mm inward from the end of the effective scan length LT, and the center point of each of the measurement pattern areas TE0 to TE9 is disposed at an interval of about 5 mm in the Y direction.
  • a line & space (L & S) pattern in which a line pattern extending in the sub scanning direction (X direction) is arranged at a constant pitch in the main scanning direction (Y direction).
  • a horizontal L & S test pattern group TSPh in which L & S) patterns are arranged in the Y direction with the line width and the pitch being made different stepwise, is provided as a resolution chart.
  • Horizontal haze pattern groups KSBh in which the patterns are arranged in the vertical direction (sub scanning direction) are provided as exposure measurement patterns (dose monitor).
  • Each of the eyelid pattern groups KSBv and KSBh is the thinnest tip portion KTp of the white pattern portion (exposed portion drawn by the spot light SP) or the black pattern portion (unexposed portion not drawn by the spot light SP).
  • ten measurement pattern areas TE0 to TE9 arranged in one example in the effective scanning length LT along the main scanning direction are one reflection of eight reflection surfaces RP of the polygon mirror PM.
  • the pattern for measurement in the measurement pattern area TEj in response to one of eight pulse changes (rising timing) on the waveform of the origin signal SZn shown in FIG. 12 so as to be drawn only on the surface RP.
  • the drawing data generated corresponding to the group (TSPv, TSPh, KSBv, KSBh) is drawn. Therefore, the eight reflecting surfaces RP of the polygon mirror PM are referred to as reflecting surfaces RPa, RPb, RPc, RPd, RPe, RPf, RPg, and RPh, respectively.
  • the ten measurement pattern areas TE0 to TE9 arranged in the first row in the sub scanning direction (X direction) are drawn only by the reflection surface RPa of the polygon mirror PM, and the sub scanning direction
  • the ten measurement pattern areas TE0 to TE9 arranged in the second column of the are drawn only by the reflection surface RPb of the polygon mirror PM, and similarly, the measurement pattern areas TEj (third to eighth columns respectively)
  • the ten are drawn only in one of the order of the reflecting surfaces RPc to RPh of the polygon mirror PM.
  • the speed is adjusted so that the moving speed of the test substrate P ′ is 1/1 of the reference speed Vdo (or the average speed Vdr) set when drawing a pattern using all the eight reflecting surfaces RP of the polygon mirror PM. It is set to decrease to 8 (1 / reflecting surface number).
  • the mechanical-optical X-shifter mechanism by the parallel plate HVP is changed stepwise in the stroke range.
  • a parallel plate is used.
  • the inclination angle ⁇ of HVP is set to ⁇ 0.
  • the inclination angle ⁇ 0 is, for example, a value (upper limit of the stroke range) such that the focused spot SPs is positioned at the uppermost (+ Z direction) on the reflecting surface RP (RPa to RPh) of the polygon mirror PM in FIG. Ru.
  • the inclination angle ⁇ of the parallel plate HVP is set to ⁇ 1. Ru.
  • the inclination angle ⁇ of the parallel plate HVP is set to ⁇ 2 and 33 each time the measurement pattern areas TEj (10 pieces ⁇ 8 lines) of eight rows drawn by each of the eight reflection surfaces RPa to RPh are exposed.
  • the measurement pattern areas TEj (10 pieces ⁇ 8 lines) corresponding to 8 lines finally drawn on each of the eight reflecting surfaces RPa to RPh instead of the light spots SPs in FIG.
  • the stepwise change amount ⁇ n of the inclination angles ⁇ of the parallel plate HVP from ⁇ 0 to ⁇ 1, ⁇ 1 to ⁇ 2, etc. can be appropriately set within the stroke range, but as one example, the light concentration shown in FIG. The amount is set such that the spot SPs is displaced by the dimension Hsp in the sub-scanning direction (Z direction).
  • the focusing spot SPs divides the stroke range which can be displaced in the sub scanning direction within the short side dimension Hpm of the reflecting surface RP (RPa to RPh) by an appropriate number (for example, 10 divisions)
  • the amount of change ⁇ n of the inclination angle of the parallel plate HVP may be set such that the focused spots SPs are displaced stepwise in the sub-scanning direction (Z direction) by the number.
  • one measurement pattern area TEj has a dimension of about 2 mm square
  • measurement pattern areas TEj aligned in the sub scanning direction The center distance between the two should be 2 mm or more.
  • the center interval is set to about 4 mm in consideration of the visibility at the time of the later inspection.
  • the line of measurement pattern areas TEj exposed only with the line of measurement pattern areas TEj exposed only with the reflection surface RPa of the polygon mirror PM is only about 12 mm in the sub scanning direction in consideration of the visibility at the time of inspection. It is exposed so as to line up with a gap. Accordingly, in FIG.
  • the measurement pattern areas TEj (10 pieces ⁇ 8 lines) for eight rows exposed in the state where the inclination angle of the parallel plate HVP is set to any of the inclination angles ⁇ 0, ⁇ 1, ⁇ 2.
  • the length of the sub scanning direction in the sub scanning direction is about 30 mm (4 mm ⁇ 7 + 2 mm) and the inclination angle ⁇ of the parallel flat plate HVP to be set is 10 points of ⁇ 0 to 99
  • the rows of the measurement pattern areas TEj to be exposed in the step are 80 rows (8 rows ⁇ 10 points).
  • the dimension in the sub-scanning direction of the test exposure area covering the 80 rows is about 408 mm (30 mm ⁇ 10 points + 12 mm ⁇ 9).
  • the length of the single-wafer test substrate P ′ in the sub-scanning direction is the interval in the sub-scanning direction between odd-numbered drawing lines SL1, SL3 and SL5 and even-numbered drawing lines SL2, SL4 and SL6 (FIG.
  • the test exposure as described above is simultaneously performed in each of the other drawing units Un as well, and the test exposure test substrate P ′ is removed from the rotary drum DR, and may be developed, dried or necessary.
  • the pattern image magnified by a microscope is taken and mounted on an inspection apparatus for measuring a dimension, a line width, or the like of a part of the pattern image.
  • the inspection apparatus includes a roll stage unit including a rotary drum DR similar to the pattern drawing apparatus EX and an encoder measurement system (scale member ESD, encoder head EHn, etc.), and a test substrate P wound around the outer peripheral surface of the rotary drum.
  • Each of the measurement patterns (TSPv, TSPh, KSBv, KSBh) formed on the test substrate P ′ wound around the rotating drum of the inspection apparatus has the rotational axis direction of the microscope system during constant speed rotation of the rotating drum.
  • the state of the line width of the L & S test pattern group TSPv, TSPh captured and formed sequentially by the imaging device (CCD, CMOS) while moving to the top, or the shape or ridge shape of the tip portion KTp of the ridge patterns KSBv, KSBh
  • the dimensions and the like in the longitudinal direction of the pattern are measured by image analysis.
  • FIG. 31 shows, as an example, drawing errors (line width error, dimensional error, etc.) of measurement pattern groups (TSPv, TSPh, KSBv, KSBh) for each measurement pattern area TEj drawn only by the reflection surface RPa of the polygon mirror PM. It is the graph which represented the measurement result of typically.
  • drawing errors line width error, dimensional error, etc.
  • the horizontal axis represents each position of the measurement pattern area TE0 to TE9 within the effective scan length LT
  • the vertical axis represents an error in the resolution line width of the drawn L & S test pattern groups TSPv and TSPh, or an eyelid pattern It represents the deviation (%) from the design value of the shape (dimension) error of the tip portion KTp of the groups KSBv and KSBh and the dimensional error of the longitudinal direction of the bowl-like pattern.
  • the dimensional error in the longitudinal direction of the wedge-shaped patterns of the wedge patterns KSBv and KSBh changes sensitively to the change of the exposure dose.
  • drawing errors such as line width errors and dimensional errors of an eyebrow pattern, etc.
  • drawing errors at each position within the effective scanning length LT while the inclination angle of the parallel plate HVP is from .eta.0 to .eta.4 (or .eta.5)
  • an allowable range for example, within ⁇ 10% of the design value
  • an appropriate exposure amount an appropriate range of the intensity of the beam LBn
  • the drawing error line width error, dimensional error of the ⁇ pattern, etc.
  • the proper exposure amount is not obtained. I understand that.
  • the intensity of the beam LBn projected onto the substrate P is the effective scanning length
  • the correction is continuously made within the allowable range in the LT.
  • the tolerance for the exposure amount to be considered appropriate by measuring the writing error (line width error, dimensional error, etc.) for each inclination angle ⁇ 0 to 99 of the parallel plate HVP. If it deviates from (the appropriate range of the intensity of the beam LBn), the intensity of the beam LBn is similarly corrected.
  • the control circuit unit 250 shown in FIG. 9 described above is based on the measurement result by the test exposure, and the inclination angles .eta. Curve information approximated to the intensity correction characteristics in each ⁇ 9 is stored, and the curve information is switched according to the inclination angle ⁇ of the parallel plate HVP to change the pulse waveform of the origin signal SZn as correction information ⁇ ACn Switch to the reflective surface RP) and output.
  • the reference pattern formed on the outer peripheral surface of the rotary drum DR is positioned on the drawing line SLn in a state where the substrate P is not wound around the rotary drum DR of the pattern drawing apparatus (exposure apparatus) EX.
  • An arrangement for forming a reference pattern on the outer peripheral surface of the rotary drum DR is disclosed, for example, in WO 2014/034161.
  • FIG. 32 shows the arrangement of ten reference patterns RMPa, RMPb,... RMPj formed at regular intervals on the outer peripheral surface of the rotary drum DR along the drawing line SLn, and the photoelectric signal So from the photoelectric sensor DTo.
  • An example of a waveform is shown.
  • Each of the reference patterns RMMPa, RMPb,..., RMPj is arranged, for example, in a shape in which a linear pattern having a line width of 100 ⁇ m is intersected in a cross shape at an angle of 45 ° to the drawing line SLn.
  • the rotary drum DR is positioned by rotating so that the drawing line SLn (spot light SP) crosses the crosses of the reference patterns RMMPa, RMPb,.
  • reference patterns RMMPa, RMPb,... Each of RMPj is scanned.
  • the reflectance with respect to the beam LBn is set to be different between each of the reference patterns RMMPa, RMPb,... RMPj crossed in a cross shape and their peripheral regions.
  • the reflectance of each of the reference patterns RMMPa, RMPb,... RMPj is set to be larger than the reflectance of the peripheral region. Therefore, as shown in the lower part of FIG.
  • the photoelectric sensor DTo has a waveform in which the signal intensity increases in a pulse shape each time the spot light SP crosses the intersections of the reference patterns RMPa, RMPb,.
  • the photoelectric signal So is output.
  • the reflectance of each of the reference patterns RMMPa, RMPb,... RMPj with respect to the beam LBn (spot light SP) should be set smaller than 20%.
  • the waveform of the photoelectric signal So as shown in the lower part of FIG. 32 is stored in the waveform memory via the AD conversion circuit in the light amount measurement unit 202 described above with reference to FIG.
  • the CPU provided in the light amount measurement unit 202 or in the drawing control apparatus (drawing control unit) 200 shown in FIG. 6 or 8 has each of the reference patterns RMPa, RMPb,.
  • the intensities of the ten peak portions corresponding to are determined, and how the intensities of each of the ten peak portions change with respect to the specified value which is the appropriate exposure amount is measured.
  • the waveform obtained by one reflection surface RP of the polygon mirror PM is an example of the waveform obtained by one reflection surface RP of the polygon mirror PM, and such a waveform is obtained by each of the eight reflection surfaces RPa to RPh of the polygon mirror PM. It is generated each time the beam LBn is scanned. However, in the case where there is a difference or unevenness in reflectance in each of the reflection surfaces RPa to RPh, the intensity change on the waveform of the photoelectric signal So generated for each of the reflection surfaces RPa to RPh is not the same. In FIG. 32, as an example, the waveform of the photoelectric signal So obtained for one reflective surface RP tends to gradually decrease in intensity from the predetermined value between the intermediate position of the effective scanning length LT and the scanning end position. There is.
  • FIG. 33 is a diagram schematically showing the shift of the drawing line SLn on the reference pattern RMPa as a representative.
  • each line width of the 45-degree diagonal linear pattern constituting the reference pattern RMpa is 100 ⁇ m
  • the drawing line SLn is located on the center line CCL parallel to the drawing line SLn and passing through the center point of the intersection of the reference pattern RMpa.
  • the scanning length of the spot light SP on the reference pattern RMPa is about 140 ⁇ m.
  • the waveform in the photoelectric signal So corresponding to the reference pattern RMpa is shown in FIG. It becomes like a single pulse.
  • the waveform corresponding to the reference pattern RMPa in the photoelectric signal So has a pulse shape of two peaks.
  • the peak values can be regarded as substantially equal.
  • the change tendency of the intensity of the spot light SP can be measured.
  • each of the reference patterns RMPa, RMPb,... RMPj may be linear patterns extending linearly in the sub-scanning direction.
  • the third measurement method uses the photoelectric signal So from the photoelectric sensor DTo provided in the drawing unit Un of the pattern drawing apparatus (exposure apparatus) EX to set each of the eight reflective surfaces RPa to RPh of the polygon mirror PM.
  • the second measurement method is the same as the second measurement method in that changes in reflectance and reflection unevenness are measured, but in this measurement method, measurement can be performed even when the substrate P for device manufacture is supported by the rotating drum DR. . Therefore, in this measurement method, on the surface of the substrate P supported by the outer peripheral surface of the rotating drum DR whose rotation has been stopped, a flexible thin reference reflector (sheet material) having a region of constant reflectance is provided. Place in piles.
  • the reference reflection plate has a reflection film formed only on the entire area or at least the area including the drawing line SLn by each of the drawing units Un.
  • the reference reflecting plate has a thickness of 50 to 100 ⁇ m, a width in the main scanning direction about the same as the width in the direction of the axis AXo of the outer peripheral surface of the rotary drum DR, and an odd number and an even number in the sub scanning direction.
  • the base material is formed of a single-wafer polyimide film which is longer than the circumferential interval of the drawing line SLn and shorter than the circumferential length of the substrate P in close contact with the outer peripheral surface of the rotary drum DR. Ru.
  • the reference reflector is formed by forming an underlying metal layer of NiP (nickel-phosphorus) or Cu (copper) on the surface of a polyimide film, and further laminating a plated layer of Au (gold) as a reflective film on the surface.
  • the underlying metal layer may be formed on the entire surface of the polyimide film serving as the base material, and the Au (gold) plated layer may be selectively formed only in the partial region including each of the six drawing lines SLn .
  • standard reflecting plate the ultra-thin sheet material of the stainless steel which has a thickness of 100 micrometers or less, the ultrathin glass sheet material which can be bent, etc. can be used.
  • FIG. 34 is a perspective view schematically showing how such a reference reflecting plate RFS is superimposed on the substrate P supported by the outer peripheral surface of the rotary drum DR.
  • a reflecting film RFa elongated in the Y direction main scanning direction
  • a reflective film RFb elongated in the Y direction with an area dimension including the drawing lines SL2, SL4, and SL6 is provided.
  • the dimension in the sub scanning direction (circumferential direction) of the reflective films RFa and RFb is set in consideration of the accuracy of manual alignment on the outer peripheral surface (substrate P) of the rotary drum DR of the reference reflective plate RFS. As about 5 to 15 mm.
  • the effective scanning length LT in the drawing line SLn is 50 mm
  • the dimension of the reflective films RFa and RFb in the main scanning direction (Y direction) needs to be 250 mm or more, but in consideration of the alignment accuracy by hand, 260 mm Set to a degree.
  • the reference reflecting plate RFS is manually inserted into the gap between the outer peripheral surface of the rotary drum DR (the surface of the substrate P) and the drawing unit Un, and odd-numbered drawing lines SL1, SL3 and SL5 are on the reflection film RFa.
  • the even numbered drawing lines SL2, SL4, and SL6 are curved so as to be positioned on the reflective film RFb, and are superimposed on the substrate P.
  • edge portions RFc at the four corners of the reference reflecting plate RFS are fixed to both end portions DRa and DRb in the Y direction of the outer peripheral surface of the rotary drum DR by adhesive tape or the like.
  • the reference reflecting plate RFS is fixed to both end portions DRa and DRb of the rotary drum DR while giving an appropriate tension to be in close contact with the lower substrate P.
  • Each of the reflection films RFa and RFb on the reference reflection plate RFS may be a reflective diffraction grating pattern or L & S pattern in which line patterns extending in the sub scanning direction are formed at a constant pitch in the main scanning direction.
  • the waveform of the photoelectric signal So from the photoelectric sensor DTo corresponds to the pitch of the diffraction grating pattern or L & S pattern. Accordingly, the waveform changes periodically in level.
  • the rotary drum DR is kept stationary, but with the drawing line SLn and the reflection films RFa and RFb (or the diffraction grating pattern or L & S pattern) on the reference reflector RFS. So that the rotation drum DR is rotated by a slight angle (in accordance with this, the substrate P is also moved slightly) in a similar manner so that good. Further, the area on the substrate P on which the reference reflection plate RFS is superimposed is a specific margin area among the margin areas between a plurality of pattern formation areas APF (see FIG. 13) arranged in the longitudinal direction of the substrate P.
  • the difference in reflectance of each of the reflecting surfaces RPa to RPh of the polygon mirror PM, the uneven reflection of each of the reflecting surfaces RPa to RPh, etc. may be periodically and precisely measured by any of the three measurement methods described above As a result, it is possible to correct local unevenness in the amount of exposure when drawing an actual pattern for an electronic device on the substrate P, and an electronic device (thin film transistor, It is possible to stably maintain the quality of the organic EL light emitting element, the sensor element, the miniaturized multilayer wiring and the like over a long period of time.
  • the intensity variation of the spot light SP caused by the difference in reflectance of each of the reflection surfaces RPa to RPh of the polygon mirror PM, the reflection unevenness of each of the reflection surfaces RPa to RPh, etc. Using the selection optical element OSn by the acousto-optic modulation element switched by application / non-application of the drive signal DFn generated by the selection element control unit 200A described in FIG. ) The amplitude (RF power) of DFn is corrected by adjusting (modulating) at high speed for each of the reflecting surfaces RPa to RPh of the polygon mirror PM.
  • a beam intensity modulation mechanism combining an electro-optical element and a polarization beam splitter may be used.
  • the electro-optical element is an optical element that emits light by rotating the polarization direction of a beam (linearly polarized light) incident on a crystal exhibiting a Pockels effect or a Kerr effect in accordance with a voltage (electric field) applied to the crystal.
  • a polarizing beam splitter which may be a polarizing plate or an analyzer
  • a linearly polarized component in a specific direction is extracted from the polarization separation surface (or polarizing plate or analyzer) of the polarizing beam splitter.
  • the intensity of the linearly polarized component to be extracted is the transmittance of the polarization beam splitter (or the polarizing plate or the analyzer) (for example, according to the polarization direction of the beam rotated and emitted according to the voltage applied to the electro-optical element) It can be modulated at high speed within the range determined by 90%) and the extinction ratio (eg, 1/100).
  • the beam intensity adjusting mechanism combining the electro-optical element and the polarization beam splitter is the six selection optical elements OS1 of the beam switching unit shown in FIG. 1 or FIG. It can be provided in each light path of the beams LB1 to LB6n which are directed to each of the drawing units U1 to U6 through each of the to OS6.
  • the six selection optical elements OS1 to OS6 are arranged to pass the beam LB from the light source device LS serially, and only one of them is a diffracted beam of the beam LB.
  • the drawing beam LBn is driven and controlled by the switch signal LPn which is generated only during the scanning time of the spot light SP by one reflection surface of the polygon mirror PM (drawing time TSn in FIG. 12). Therefore, the beam intensity adjustment mechanism combining the electro-optical element and the polarizing beam splitter (or the polarizing plate or the analyzer) is the first (first stage) of the beam switching unit from the light source device LS shown in FIG. 1 or FIG. It can be provided only in the section where the beam LB is a thin parallel beam in the optical path to the selection optical element OS5.
  • Intensity correction data intensity modulation characteristics
  • Ru Intensity modulation characteristics
  • each of the selection optical elements OSn by the acousto-optic modulation element is not used for the intensity correction of the spot light SP due to the difference in reflectance of each of the reflection surfaces RPa to RPh
  • the light beam can be easily adjusted with a single beam intensity adjustment mechanism (electro-optical element) even with respect to fluctuations in the intensity of the beam LB from the light source device LS (slow fluctuations in peak intensity of pulsed light). Therefore, the degree of freedom in control of the intensity correction of the spot light SP (beam LBn) is expanded.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Information Transfer Systems (AREA)
  • Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)
  • Manufacture, Treatment Of Glass Fibers (AREA)
  • Mechanical Optical Scanning Systems (AREA)

Abstract

La présente invention concerne un dispositif de traçage de motif (EX) pourvu d'une unité de traçage (un) permettant de balayer une lumière dirigée (SP) d'un faisceau de traçage (LBn) dans la direction de balayage principal et de tracer un motif, et d'un mécanisme de déplacement permettant de déplacer un substrat (P) et l'unité de traçage (Un) dans la direction de sous-balayage l'un par rapport à l'autre. Le dispositif de traçage de motif (EX) passe alternativement, à l'aide d'un élément optique (OSn) de sélection, d'un premier état permettant d'amener un faisceau (LB) d'un dispositif de source de lumière (LS) à dévier selon un angle de déviation prescrit par un changement de caractéristiques optiques provoqué par un signal électrique et d'amener le faisceau dévié à entrer dans l'unité de traçage (Un) en tant que faisceau de traçage (LBn), à un second état permettant de ne pas amener le faisceau dévié à entrer dans l'unité de traçage (Un). Afin d'amener la lumière dirigée (SP) projetée depuis l'unité de traçage (Un) à dévier dans la direction de sous-balayage d'une quantité prescrite lorsqu'elle est dans le premier état, le dispositif de traçage de motif (EX) commande le signal électrique de sorte que l'angle de déviation par l'élément optique (OSn) de sélection change, et corrige un changement d'intensité de la lumière dirigée (SP) qui se produit en raison d'un changement de l'angle de déviation par l'élément optique (OSn) de sélection, en fonction des caractéristiques optiques de l'élément optique (OSn) de sélection.
PCT/JP2018/033703 2017-09-26 2018-09-11 Dispositif de traçage de motif WO2019065224A1 (fr)

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WO2022092320A1 (fr) * 2020-11-02 2022-05-05 株式会社ニコン Appareil d'exposition de motif
CN113375576A (zh) * 2021-06-09 2021-09-10 上海光之虹光电通讯设备有限公司 一种光斑直径检测系统、方法及光斑能量分布检测方法

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JP2008182033A (ja) * 2007-01-24 2008-08-07 Sony Corp レーザ描画方法及びレーザ描画装置
JP2011242618A (ja) * 2010-05-19 2011-12-01 Konica Minolta Business Technologies Inc 画像形成装置
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WO2015152218A1 (fr) * 2014-04-01 2015-10-08 株式会社ニコン Appareil de traitement de substrat, procédé de fabrication de dispositif et procédé de traitement de substrat
JP2017067823A (ja) * 2015-09-28 2017-04-06 株式会社ニコン パターン描画装置およびパターン描画方法
JP2017102151A (ja) * 2015-11-30 2017-06-08 株式会社ニコン パターン描画装置およびパターン描画方法

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TWI626515B (zh) * 2012-03-26 2018-06-11 日商尼康股份有限公司 基板處理裝置、處理裝置及元件製造方法
WO2016152758A1 (fr) * 2015-03-20 2016-09-29 株式会社ニコン Dispositif de balayage par faisceau, procédé de balayage par faisceau, et dispositif de rendu
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JPH10186259A (ja) * 1996-11-11 1998-07-14 Asahi Optical Co Ltd レーザ走査記録装置
JP2008182033A (ja) * 2007-01-24 2008-08-07 Sony Corp レーザ描画方法及びレーザ描画装置
JP2011242618A (ja) * 2010-05-19 2011-12-01 Konica Minolta Business Technologies Inc 画像形成装置
JP2015007661A (ja) * 2013-06-24 2015-01-15 オリンパス株式会社 走査型光学顕微鏡
WO2015152218A1 (fr) * 2014-04-01 2015-10-08 株式会社ニコン Appareil de traitement de substrat, procédé de fabrication de dispositif et procédé de traitement de substrat
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JP2017102151A (ja) * 2015-11-30 2017-06-08 株式会社ニコン パターン描画装置およびパターン描画方法

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