WO2019064439A1 - Dispositif d'affichage - Google Patents

Dispositif d'affichage Download PDF

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Publication number
WO2019064439A1
WO2019064439A1 PCT/JP2017/035255 JP2017035255W WO2019064439A1 WO 2019064439 A1 WO2019064439 A1 WO 2019064439A1 JP 2017035255 W JP2017035255 W JP 2017035255W WO 2019064439 A1 WO2019064439 A1 WO 2019064439A1
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Prior art keywords
display device
layer
organic
insulating film
film
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PCT/JP2017/035255
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English (en)
Japanese (ja)
Inventor
達 岡部
信介 齋田
遼佑 郡司
博己 谷山
浩治 神村
芳浩 仲田
彬 井上
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シャープ株式会社
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Priority to PCT/JP2017/035255 priority Critical patent/WO2019064439A1/fr
Publication of WO2019064439A1 publication Critical patent/WO2019064439A1/fr

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • the present invention relates to a display device.
  • organic EL display devices using organic EL (electroluminescence) elements have attracted attention as display devices replacing liquid crystal display devices.
  • organic EL display device a flexible organic EL display device in which an organic EL element or the like is formed on a flexible resin substrate has been proposed.
  • Patent Document 1 a plurality of trenches penetrating the first buffer layer covering the first wiring, the second buffer layer covering the second wiring, and the intermediate insulating film covering the gate element do not A flexible organic light emitting diode display disposed in a folded area of the display area is disclosed.
  • This invention is made in view of this point, The place made as the objective is in suppressing the damage to the light emitting element with respect to the bending in a display area.
  • a display device is a display device provided with a resin substrate and a light emitting element forming a display area provided on the resin substrate via a TFT layer, In the display region, an opening for penetrating the inorganic insulating film to expose the upper surface of the resin substrate is formed in at least one inorganic insulating film forming the TFT layer, and the resin substrate is exposed from the opening.
  • a metal layer is provided to cover the upper surface and the peripheral end of the inorganic insulating film in which the opening is formed.
  • an opening is formed in at least one inorganic insulating film forming the TFT layer, and the upper surface of the resin substrate exposed from the opening and the inorganic insulating film in which the opening is formed Since the metal layer is provided so as to cover the peripheral end of the light emitting element, damage to the light emitting element due to bending in the display region can be suppressed.
  • FIG. 1 is a plan view of the organic EL display device according to the first embodiment of the present invention.
  • FIG. 2 is a plan view of a display area of the organic EL display device according to the first embodiment of the present invention.
  • FIG. 3 is an equivalent circuit diagram showing a TFT layer constituting the organic EL display device according to the first embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of the display area of the organic EL display device according to the first embodiment of the present invention.
  • FIG. 5 is a cross-sectional view showing an organic EL layer constituting the organic EL display device according to the first embodiment of the present invention.
  • FIG. 6 is a plan view showing an arrangement of openings and metal layers in a first modified example of the organic EL display device according to the first embodiment of the present invention.
  • FIG. 7 is a plan view showing the arrangement of openings and metal layers in a second modified example of the organic EL display device according to the first embodiment of the present invention.
  • FIG. 8 is a plan view showing the arrangement of openings and metal layers in a third modification of the organic EL display device according to the first embodiment of the present invention.
  • FIG. 9 is a cross-sectional view of the display area of the organic EL display device according to the second embodiment of the present invention.
  • FIG. 10 is a cross-sectional view of the display area of the organic EL display device according to the third embodiment of the present invention.
  • FIG. 11 is a plan view of an organic EL display device according to a fourth embodiment of the present invention.
  • FIG. 12 is a cross-sectional view of the frame region of the organic EL display taken along the line XII-XII in FIG.
  • FIG. 13 is a plan view of a modification of the organic EL display device according to the fourth embodiment of the present invention.
  • First Embodiment 1 to 8 show a first embodiment of a display device according to the present invention.
  • an organic EL display device provided with an organic EL element is illustrated as a display device provided with a light emitting element.
  • FIG. 1 is a plan view of the organic EL display device 50a of the present embodiment.
  • FIG. 2 is a plan view of the display area D of the organic EL display device 50a.
  • FIG. 3 is an equivalent circuit diagram showing the TFT layer 20a constituting the organic EL display device 50a.
  • FIG. 4 is also a cross-sectional view of the display area D of the organic EL display device 50a.
  • FIG. 5 is a cross-sectional view showing the organic EL layer 23 constituting the organic EL display device 50a.
  • 6 to 8 are plan views showing the arrangement of the opening A and the metal layers 18eaa to 18eac in the first to third modifications of the organic EL display device 50a.
  • the organic EL display device 50 a includes a display area D for displaying an image defined in a rectangular shape and a frame area F defined around the display area D.
  • a plurality of sub-pixels P are arranged in a matrix.
  • the sub-pixel P having a red light emitting area Lr for performing red gradation display, green emission for performing green gradation display A sub pixel P having a region Lg and a sub pixel P having a blue light emitting region Lb for performing gradation display of blue are provided adjacent to each other.
  • one pixel is formed by three adjacent sub-pixels P having a red light emitting region Lr, a green light emitting region Lg, and a blue light emitting region Lb.
  • the organic EL display device 50 a includes an organic EL element 30 including a resin substrate layer 10 and a display region D provided on the resin substrate layer 10 via a thin film transistor (TFT) layer 20 a. And have.
  • TFT thin film transistor
  • the resin substrate layer 10 is made of, for example, a polyimide resin or the like, and is provided as a resin substrate.
  • the TFT layer 20a includes a base coat film 11 provided on the resin substrate layer 10, a plurality of first TFTs 9a provided on the base coat film 11, a plurality of second TFTs 9b, and a plurality of capacitors 9c.
  • Each first TFT 9a, each second TFT 9b, and a flattening film 19a provided on each capacitor 9c are provided.
  • a plurality of gate lines 14 are provided so as to extend parallel to each other in the lateral direction in the drawing.
  • a plurality of source lines 18f are provided so as to extend in parallel to each other in the vertical direction in the drawing.
  • a plurality of power supply lines 18g are provided adjacent to the respective source lines 18f so as to extend in parallel in the vertical direction in the figure. Further, in the TFT layer 20a, as shown in FIG. 3, in each sub-pixel P, the first TFT 9a, the second TFT 9b, and the capacitor 9c are provided.
  • the base coat film 11 is formed of, for example, a single layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.
  • the first TFT 9a is connected to the corresponding gate line 14 and source line 18f in each sub pixel P, as shown in FIG.
  • the first TFT 9 a includes a semiconductor layer 12 a provided in an island shape on the base coat film 11, a gate insulating film 13 provided so as to cover the semiconductor layer 12 a, and a gate insulating film 13.
  • a gate electrode 14a provided thereon so as to overlap with a part of the semiconductor layer 12a, a first interlayer insulating film 15 and a second interlayer insulating film 17 sequentially provided so as to cover the gate electrode 14a, and a second interlayer insulating film
  • a source electrode 18a and a drain electrode 18b provided on the film 17 and arranged to be separated from each other are provided.
  • the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are formed of, for example, a single layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride. .
  • the second TFT 9 b is connected to the corresponding first TFT 9 a and the corresponding power supply line 18 g in each sub-pixel P.
  • the second TFT 9 b includes the semiconductor layer 12 b provided in an island shape on the base coat film 11, the gate insulating film 13 provided to cover the semiconductor layer 12 b, and the gate insulating film 13.
  • a source electrode 18c and a drain electrode 18d provided on the film 17 and arranged to be separated from each other are provided.
  • first TFT 9 a and the second TFT 9 b may be bottom gate type TFTs.
  • capacitor 9c is connected to the corresponding first TFT 9a and the corresponding power supply line 18g in each sub-pixel P, as shown in FIG.
  • capacitor 9c is formed of a lower conductive layer 14c formed in the same layer and of the same material as the gate electrode, and a first interlayer insulating film 15 provided to cover lower conductive layer 14c.
  • An upper conductive layer 16 is provided on the first interlayer insulating film 15 so as to overlap with the lower conductive layer 14c.
  • the flattening film 19a is made of, for example, a colorless and transparent organic resin material such as a polyimide resin.
  • the organic EL element 30 includes a plurality of first electrodes 21 sequentially provided on the planarizing film 19 a, an edge cover 22, a plurality of organic EL layers 23, a second electrode 24, and a sealing film 28. Is equipped.
  • the plurality of first electrodes 21 are provided as a reflective electrode in a matrix on the planarization film 19 a so as to correspond to the plurality of sub-pixels P.
  • the first electrode 21 is connected to the drain electrode 18d of each second TFT 9b via a contact hole formed in the planarization film 19a.
  • the first electrode 21 has a function of injecting holes into the organic EL layer 23.
  • the first electrode 21 is more preferably formed of a material having a large work function in order to improve the hole injection efficiency into the organic EL layer 23.
  • the first electrode 21 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And metal materials such as lithium fluoride (LiF).
  • the material which comprises the 1st electrode 21 is magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxidation, for example Astatine (AtO 2 ), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), or lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc. It may be an alloy.
  • the material constituting the first electrode 21 is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO) or the like. It may be. Further, the first electrode 21 may be formed by laminating a plurality of layers made of the above materials. In addition, as a material with a large work function, indium tin oxide (ITO), indium zinc oxide (IZO), etc. are mentioned, for example.
  • the edge cover 22 is provided in a grid shape so as to cover the peripheral portion of each first electrode 21 as shown in FIG.
  • organic films such as polyimide resin, acrylic resin, polysiloxane resin, novolac resin, are mentioned, for example.
  • each organic EL layer 23 is disposed on the respective first electrodes 21 and provided in a matrix so as to correspond to the plurality of sub-pixels.
  • each organic EL layer 23 is provided with a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4 and an electron injection provided sequentially on the first electrode 21.
  • the layer 5 is provided.
  • the hole injection layer 1 is also called an anode buffer layer, and has the function of improving the hole injection efficiency from the first electrode 21 to the organic EL layer 23 by bringing the energy levels of the first electrode 21 and the organic EL layer 23 closer to each other.
  • the material constituting the hole injection layer for example, triazole derivative, oxadiazole derivative, imidazole derivative, polyarylalkane derivative, pyrazoline derivative, phenylenediamine derivative, oxazole derivative, styrylanthracene derivative, fluorenone derivative, Hydrazone derivatives, stilbene derivatives and the like can be mentioned.
  • the hole transport layer 2 has a function of improving the transport efficiency of holes from the first electrode 21 to the organic EL layer 23.
  • a material constituting the hole transport layer 2 for example, porphyrin derivative, aromatic tertiary amine compound, styrylamine derivative, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivative, oxadiazole Derivative, imidazole derivative, polyarylalkane derivative, pyrazoline derivative, pyrazolone derivative, phenylenediamine derivative, arylamine derivative, amine-substituted chalcone derivative, oxazole derivative, styrylanthracene derivative, fluorenone derivative, hydrazone derivative, stilbene derivative, hydrogenated amorphous silicon, Hydrogenated amorphous silicon carbide, zinc sulfide, zinc selenide and the like can be mentioned.
  • the light emitting layer 3 holes and electrons are injected from the first electrode 21 and the second electrode 24, respectively, and holes and electrons are recombined when a voltage is applied by the first electrode 21 and the second electrode 24. It is an area.
  • the light emitting layer 3 is formed of a material having high light emission efficiency.
  • a metal oxinoid compound [8-hydroxy quinoline metal complex], a naphthalene derivative, an anthracene derivative, a diphenyl ethylene derivative, a vinylacetone derivative, a triphenylamine derivative, a butadiene derivative, a coumarin derivative, for example , Benzoxazole derivative, oxadiazole derivative, oxazole derivative, benzimidazole derivative, thiadiazole derivative, benzthiazole derivative, styryl derivative, styrylamine derivative, bisstyrylbenzene derivative, trisstyrylbenzene derivative, perylene derivative, perinone derivative, aminopyrene derivative, Pyridine derivatives, rhodamine derivatives, aquidin derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylene vinylet , Polysilane, and the like.
  • the electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3.
  • a material constituting the electron transport layer 4 for example, as an organic compound, oxadiazole derivative, triazole derivative, benzoquinone derivative, naphthoquinone derivative, anthraquinone derivative, tetracyanoanthraquinodimethane derivative, diphenoquinone derivative, fluorenone derivative And silole derivatives, metal oxinoid compounds and the like.
  • the electron injection layer 5 has a function of bringing the energy levels of the second electrode 24 and the organic EL layer 23 closer to each other and improving the efficiency of electron injection from the second electrode 24 to the organic EL layer 23.
  • the drive voltage of the organic EL element 30 can be lowered.
  • the electron injection layer 5 is also called a cathode buffer layer.
  • a material constituting the electron injection layer 5 for example, lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), barium fluoride Inorganic alkali compounds such as (BaF 2 ), aluminum oxide (Al 2 O 3 ), strontium oxide (SrO) and the like can be mentioned.
  • the 2nd electrode 24 is provided so that each organic EL layer 23 and the edge cover 22 may be covered, as shown in FIG.
  • the second electrode 24 has a function of injecting electrons into the organic EL layer 23. Further, in order to improve the electron injection efficiency to the organic EL layer 23, the second electrode 24 is more preferably made of a material having a small work function.
  • the second electrode 24 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And lithium fluoride (LiF).
  • the second electrode 24 may be, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxide astatine (AtO 2) And lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) May be Also, the second electrode 24 may be made of, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), etc. . In addition, the second electrode 24 may be formed by stacking a plurality of layers made of the above materials.
  • the sealing film 28 is, as shown in FIG. 4, a first inorganic film 25 provided to cover the second electrode 24, an organic film 26 provided to cover the first inorganic film 25, and an organic film. And a second inorganic film 27 provided so as to cover 26 and has a function of protecting the organic EL layer 23 from moisture and oxygen.
  • the first inorganic film 25 and the second inorganic film 27 are, for example, silicon nitride (silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), silicon nitride such as tetrasilicon nitride (Si 3 N 4 )). It is made of an inorganic material such as SiNx (x is a positive number), silicon carbonitride (SiCN) or the like.
  • the organic film 26 is made of, for example, an organic material such as acrylate, polyurea, parylene, polyimide, or polyamide.
  • An opening A for penetrating the inorganic insulating laminated film to expose the upper surface of the resin substrate 10 is formed in the inorganic insulating laminated film of the film 17, and the upper surface of the resin substrate layer 10 exposed from the opening A and the opening A are
  • a metal layer 18ea is provided to cover the peripheral end of the formed inorganic insulating laminated film, and a planarization film 19a is provided to cover the metal layer 18ea.
  • the metal layer 18ea is made of the same material and in the same layer as the source line 18f, the power supply line 18g, the source electrodes 18a and 18c, and the drain electrodes 18b and 18d.
  • the opening A and the metal layer 18ea overlapping the opening A are, for example, in the form of islands between the red light emitting region Lr, the green light emitting region Lg and the blue light emitting region Lb.
  • the opening A and the metal layer 18eaa are formed.
  • the opening A and the metal layer 18ea overlapping the opening A are formed in an island shape (substantially rectangular shape) between the red light emitting region Lr, the green light emitting region Lg, and the blue light emitting region Lb, as shown in FIG.
  • the metal layer 18eab of FIG. 7 is connected in the lateral direction in FIG. 8 to reduce the resistance of the high level power supply line 18g (ELVDD, see FIG. 3).
  • ELVDD high level power supply line
  • the metal layers 18eaa, 18eab and 18eac are made of the same material and in the same layer as the source line 18f, the power supply line 18g, the source electrodes 18a and 18c, and the drain electrodes 18b and 18d, for example, aluminum having bending resistance
  • You may be comprised by metal conductive films, such as copper and silver.
  • the organic EL display device 50a described above turns on the first TFT 9a in each sub-pixel P by inputting a gate signal to the first TFT 9a via the gate line 14, and the gate electrode of the second TFT 9b via the source line 18f.
  • a predetermined voltage corresponding to the source signal is written in 14b and capacitor 9c, the magnitude of the current from power supply line 18g is defined based on the gate voltage of second TFT 9b, and the defined current is supplied to organic EL layer 23 As a result, the light emitting layer 3 of the organic EL layer 23 emits light to display an image.
  • the gate voltage of the second TFT 9b is held by the capacitor 9c, so light emission by the light emitting layer 3 is continued until the gate signal of the next frame is input. Maintained.
  • the glass substrate is It can be manufactured by peeling.
  • the organic EL display device 50a of the present embodiment in each sub-pixel P of the display area D, the base coat film 11, the gate insulating film 13 and the first interlayer insulating film 15 constituting the TFT layer 20a. Since the opening A is formed in the inorganic insulating laminated film of the second interlayer insulating film 17, the organic EL display device 50 a can be easily bent in the display region D. Then, the metal layer 18ea is provided on the inorganic insulating laminated film so as to cover the upper surface of the resin substrate layer 10 exposed from the opening A and the peripheral end of the inorganic insulating laminated film in which the opening A is formed.
  • the entry of moisture from the resin substrate layer 10 side to the organic EL element 30 can be suppressed by the metal layer 18ea.
  • damage to the TFT layer 20a at the time of bending in the display area D, damage to the organic EL element 30 accompanying it, and damage to the organic EL element 30 due to the intrusion of moisture can be suppressed. Damage to the organic EL element 30 due to bending at the same time can be suppressed.
  • FIG. 9 shows a second embodiment of the display device according to the present invention.
  • FIG. 9 is a cross-sectional view of the display area D of the organic EL display device 50b of the present embodiment.
  • the same parts as those in FIGS. 1 to 8 are assigned the same reference numerals and detailed explanations thereof will be omitted.
  • the organic EL display device 50a in which the metal layer 18ea of one layer is provided on the lower surface side of the planarizing film 19b is exemplified. However, in the present embodiment, 3 on the lower surface side of the planarizing film 19c.
  • the organic EL display device 50b provided with the metal layers 14d, 16b and 18eb of the layers is illustrated.
  • the organic EL display device 50 b includes a display area D for displaying an image defined in a rectangular shape and a frame area F defined around the display area D. Further, as shown in FIG. 9, the organic EL display device 50b includes a resin substrate layer 10, and an organic EL element 30 constituting a display region D provided on the resin substrate layer 10 via the TFT layer 20b. ing.
  • the TFT layer 20b includes a base coat film 11 provided on the resin substrate layer 10, a plurality of first TFTs 9a provided on the base coat film 11, a plurality of second TFTs 9b, and a plurality of capacitors 9c.
  • Each first TFT 9a, each second TFT 9b, and a planarization film 19b provided on each capacitor 9c are provided.
  • a plurality of gate lines 14 are provided so as to extend in parallel with each other.
  • a plurality of source lines 18f are provided so as to extend in parallel with each other.
  • a plurality of power supply lines 18g are provided adjacent to the respective source lines 18f so as to extend in parallel with one another.
  • the first TFT 9a, the second TFT 9b, and the capacitor 9c are provided in each sub-pixel P.
  • the planarizing film 19 b is made of, for example, a colorless and transparent organic resin material such as a polyimide resin.
  • the organic EL element 30 includes a plurality of first electrodes 21 provided in order on the planarizing film 19b, an edge cover 22, a plurality of organic EL layers 23, a second electrode 24, and a sealing film 28. Is equipped.
  • An opening A for penetrating the inorganic insulating laminated film to expose the upper surface of the resin substrate 10 is formed in the inorganic insulating laminated film of the film 17, and the upper surface of the resin substrate layer 10 exposed from the opening A and the opening A are Metal layers 14d, 16b and 18eb are provided so as to cover the peripheral end of the formed inorganic insulating laminated film, and a planarization film 19b is provided so as to cover the metal layer 18eb.
  • the metal layer 14d is made of the same material in the same layer as the gate electrodes 14a and 14b.
  • the metal layer 16b is made of the same material as the upper conductive layer 16 of the capacitor 9c.
  • the metal layer 18eb is formed of the same material and in the same layer as the source line 18f, the power supply line 18g, the source electrodes 18a and 18c, and the drain electrodes 18b and 18d.
  • the organic EL display device 50b described above has flexibility, and in each sub-pixel P, the organic EL layer 23 through the first TFT 9a and the second TFT 9b. By appropriately emitting light from the light emitting layer 3, an image is displayed.
  • the organic EL display device 50b of the present embodiment in each sub-pixel P of the display area D, the base coat film 11, the gate insulating film 13 and the first interlayer insulating film 15 that constitute the TFT layer 20b. Since the opening A is formed in the inorganic insulating laminated film of the second interlayer insulating film 17, the organic EL display device 50 b can be easily bent in the display area D. Then, a laminated film of metal layers 14d, 16b and 18eb so as to cover the upper surface of the resin substrate layer 10 exposed from the opening A in the inorganic insulating laminated film and the peripheral end of the inorganic insulating laminated film in which the opening A is formed.
  • the laminated film of the metal layers 14d, 16b and 18eb is provided so as to cover the lower surface side of the planarizing film 19b.
  • the entry of moisture into the element 30 can be further suppressed by the laminated film of the metal layers 14d, 16b and 18eb.
  • FIG. 10 shows a third embodiment of the display device according to the present invention.
  • FIG. 10 is a cross-sectional view of the display area D of the organic EL display device 50c of the present embodiment.
  • the organic EL display device 50a is illustrated in which the first electrode 21 and the metal layer 18ea are arranged so as not to overlap with each other. However, in the present embodiment, the first electrode 21c and the metal layer 18ea are mutually different. An organic EL display device 50c disposed to overlap is illustrated.
  • the organic EL display device 50c includes a display area D for displaying an image defined in a rectangular shape and a frame area F defined around the display area D. Further, as shown in FIG. 10, the organic EL display device 50c includes a resin substrate layer 10, and an organic EL element 30c constituting a display region D provided on the resin substrate layer 10 via the TFT layer 20a. ing.
  • the organic EL element 30c includes a plurality of first electrodes 21c sequentially provided on the planarizing film 19a, an edge cover 22, a plurality of organic EL layers 23, a second electrode 24, and a sealing film 28. Is equipped.
  • the plurality of first electrodes 21c are provided on the planarizing film 19a as a reflective electrode so as to correspond to the plurality of sub-pixels P.
  • the first electrode 21c is connected to the drain electrode 18d of each second TFT 9b via a contact hole formed in the planarization film 19a.
  • the first electrode 21 c has a function of injecting holes into the organic EL layer 23.
  • the first electrode 21 c is more preferably formed of a material having a large work function.
  • the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating constituting the TFT layer 20a in each sub-pixel P in the display region D, the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating constituting the TFT layer 20a.
  • An opening A for penetrating the inorganic insulating laminated film to expose the upper surface of the resin substrate 10 is formed in the inorganic insulating laminated film of the film 17, and the upper surface of the resin substrate layer 10 exposed from the opening A and the opening A are A metal layer 18ea is provided to cover the peripheral end of the formed inorganic insulating laminated film, and a planarization film 19a is provided to cover the metal layer 18ea.
  • the first electrode 21c described above is provided so as to overlap the metal layer 18ea.
  • the organic EL display device 50c described above has flexibility, and in each sub-pixel P, the organic EL layer 23 through the first TFT 9a and the second TFT 9b. By appropriately emitting light from the light emitting layer 3, an image is displayed.
  • the organic EL display device 50c of the present embodiment in each sub-pixel P of the display area D, the base coat film 11, the gate insulating film 13 and the first interlayer insulating film 15 that constitute the TFT layer 20a. Since the opening A is formed in the inorganic insulating laminated film of the second interlayer insulating film 17, the organic EL display device 50 c can be easily bent in the display area D. Then, the metal layer 18ea is provided on the inorganic insulating laminated film so as to cover the upper surface of the resin substrate layer 10 exposed from the opening A and the peripheral end of the inorganic insulating laminated film in which the opening A is formed.
  • the entry of moisture from the resin substrate layer 10 side to the organic EL element 30c can be suppressed by the metal layer 18ea.
  • damage to the TFT layer 20a at the time of bending in the display area D, damage to the organic EL element 30c accompanying it, and damage to the organic EL element 30c due to the intrusion of moisture can be suppressed. Damage to the organic EL element 30c due to bending at the same time can be suppressed.
  • the first electrode 21c is provided so as to overlap with the metal layer 18ea, so that the light emitting region can be enlarged in each sub pixel P.
  • FIG. 11 is a plan view of the organic EL display device 50d of the present embodiment.
  • 12 is a cross-sectional view of the frame area F of the organic EL display device 50d taken along the line XII-XII in FIG.
  • FIG. 13 is a plan view of an organic EL display device 50e which is a modification of the organic EL display device 50d.
  • the organic EL display devices 50a to 50c in which the opening portion A of the inorganic insulating laminated film is formed in the display region D are illustrated, but in the present embodiment, the frame region F is the inorganic insulating laminated film
  • the organic EL display device 50d in which the slit S is formed is illustrated.
  • the organic EL display device 50d includes a display area D for displaying an image defined in a rectangular shape, and a frame area F (not shown in FIG. 11) defined around the display area D. And a terminal portion T provided at an end of the frame region F.
  • a plurality of frame wirings 14 e are provided between the display area D and the terminal portion T in the frame area F.
  • the frame wiring 14e is made of the same material and in the same layer as the gate electrodes 14a and 14b.
  • the display area D of the organic EL display device 50d is the organic EL display device 50a of the first embodiment, the organic EL display device 50b of the second embodiment, or the organic EL display device 50c of the third embodiment. It has the same structure as
  • the resin substrate layer 10 and the base coat film 11 sequentially provided on the resin substrate layer 10.
  • the inorganic insulating laminated film of the second interlayer insulating film 17 the slit S formed in the inorganic laminated film, the upper surface of the resin substrate layer 10 exposed from the slit S, and the inorganic insulating laminated film in which the slit S is formed
  • a frame metal layer 18 f provided so as to cover the peripheral end and a resin film 19 d provided so as to cover the frame metal layer 18 f are provided.
  • the slits S penetrate the inorganic insulating laminated film of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 to expose the upper surface of the resin substrate layer 10. It is formed. Further, as shown in FIG. 11, the slits S are formed over the entire circumference of the resin substrate layer 10 so as to surround the display area D, the terminal portions T, and the frame wiring 14e. The slits S may be formed in a substantially U shape without being formed over the entire circumference of the resin substrate layer 10 as in the organic EL display device 50e shown in FIG.
  • the resin film 19d is provided in the same layer as the planarizing film 19a using the same material.
  • the second electrode 24 is connected to the source conductive layer 18g.
  • the source conductive layer 18g is made of the same material and in the same layer as the source line 18f, the power supply line 18g, the source electrodes 18a and 18c, and the drain electrodes 18b and 18d.
  • the organic EL device 50 has flexibility, and in each sub-pixel P, the organic EL via the first TFT 9a and the second TFT 9b. By appropriately emitting light from the light emitting layer 3 of the layer 23, an image is displayed.
  • the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film are provided at the peripheral end of the resin substrate layer 10. Since the slit S is formed in the inorganic insulating laminated film 17, even if a crack occurs in the inorganic insulating film at the end of the organic EL display device 50 d, the progress of the crack to the display region D can be suppressed it can.
  • the organic EL layer having a five-layer laminated structure of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer is exemplified. It may be a three-layer laminated structure of a hole injection layer and hole transport layer, a light emitting layer, and an electron transport layer and electron injection layer.
  • the organic EL display device is exemplified in which the first electrode is an anode and the second electrode is a cathode.
  • the laminated structure of the organic EL layer is reversed and the first electrode is a cathode.
  • the present invention can also be applied to an organic EL display device in which the second electrode is an anode.
  • the organic EL display device in which the electrode of the TFT connected to the first electrode is the drain electrode is exemplified.
  • the electrode of the TFT connected to the first electrode is the source electrode
  • the present invention can also be applied to an organic EL display device to be called.
  • the organic EL display device is exemplified as the display device, but the present invention relates to a display device including a plurality of light emitting elements driven by current, for example, a light emitting element using a quantum dot containing layer
  • the present invention can be applied to a display device equipped with a QLED (Quantum-dot light emitting diode).
  • the present invention is useful for flexible display devices.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Dans une zone d'affichage (D) d'un dispositif d'affichage (50a) selon l'invention, une ouverture (A) est formée dans au moins une couche d'un film isolant inorganique qui constitue une couche de transistor à couches minces (TFT) (20a) de manière à pénétrer dans le film isolant inorganique et à faire apparaître la surface supérieure d'un substrat en résine (10), et une couche métallique (18ea) est disposée de manière à recouvrir la surface supérieure du substrat en résine (10) rendue visible par l'ouverture (A) et à recouvrir l'extrémité périphérique du film isolant inorganique dans lequel l'ouverture (A) est formée.
PCT/JP2017/035255 2017-09-28 2017-09-28 Dispositif d'affichage WO2019064439A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015148795A (ja) * 2014-01-08 2015-08-20 パナソニック株式会社 表示装置
US20160204373A1 (en) * 2015-01-14 2016-07-14 Samsung Display Co., Ltd. Organic light emitting diode display
US20170040406A1 (en) * 2015-08-06 2017-02-09 Samsung Display Co., Ltd. Flexible display device and manufacturing method thereof
JP2017116904A (ja) * 2015-12-21 2017-06-29 株式会社ジャパンディスプレイ 表示装置
JP2017168308A (ja) * 2016-03-16 2017-09-21 株式会社Ｊｏｌｅｄ 表示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015148795A (ja) * 2014-01-08 2015-08-20 パナソニック株式会社 表示装置
US20160204373A1 (en) * 2015-01-14 2016-07-14 Samsung Display Co., Ltd. Organic light emitting diode display
US20170040406A1 (en) * 2015-08-06 2017-02-09 Samsung Display Co., Ltd. Flexible display device and manufacturing method thereof
JP2017116904A (ja) * 2015-12-21 2017-06-29 株式会社ジャパンディスプレイ 表示装置
JP2017168308A (ja) * 2016-03-16 2017-09-21 株式会社Ｊｏｌｅｄ 表示装置

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