WO2019064395A1 - Dispositif d'affichage - Google Patents

Dispositif d'affichage Download PDF

Info

Publication number
WO2019064395A1
WO2019064395A1 PCT/JP2017/035056 JP2017035056W WO2019064395A1 WO 2019064395 A1 WO2019064395 A1 WO 2019064395A1 JP 2017035056 W JP2017035056 W JP 2017035056W WO 2019064395 A1 WO2019064395 A1 WO 2019064395A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic layer
organic
display device
layer
area
Prior art date
Application number
PCT/JP2017/035056
Other languages
English (en)
Japanese (ja)
Inventor
達 岡部
遼佑 郡司
博己 谷山
信介 齋田
浩治 神村
芳浩 仲田
彬 井上
Original Assignee
シャープ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to PCT/JP2017/035056 priority Critical patent/WO2019064395A1/fr
Publication of WO2019064395A1 publication Critical patent/WO2019064395A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Definitions

  • the present invention relates to a display device.
  • organic EL display devices using organic EL (electroluminescence) elements have attracted attention as display devices replacing liquid crystal display devices.
  • a planarization film provided to cover the TFT, and a first electrode provided on the surface of the planarization film and connected to the TFT via the contact hole 111
  • an edge cover provided on the planarizing film 104 and the first electrode 105 and having an opening corresponding to the light emitting region of the organic EL element (for example, see Patent Document 1).
  • this invention is made in view of the above-mentioned problem, and it aims at providing the display which can be manufactured cheaply compared with the former.
  • a display device includes a first organic layer, and a second organic material provided on the first organic layer and different from the organic material forming the first organic layer.
  • a display device comprising an organic layer and a light emitting element provided on a first organic layer, wherein a display region for displaying an image and a frame region are defined around the display region, the first organic layer being a display device. It is characterized by being covered by the 2nd organic layer.
  • the first organic layer can be formed of an inexpensive organic resin material such as an acrylic resin or an epoxy resin
  • the organic EL display device can be manufactured inexpensively.
  • the second organic layer can suppress the entry of moisture into the first organic layer, deterioration of the light emitting element due to the moisture of the first organic layer in the display region can be prevented.
  • First Embodiment 1 to 5 show a first embodiment of a display device according to the present invention.
  • an organic EL display device provided with an organic EL element is illustrated as a display device provided with a light emitting element.
  • FIG. 1 is a plan view of the organic EL display device 50a of the present embodiment.
  • FIG. 2 is a plan view of the display area D of the organic EL display device 50a.
  • FIG. 3 is an equivalent circuit diagram showing the TFT layer 20a constituting the organic EL display device 50a.
  • 4 is a cross-sectional view of the display area D of the organic EL display device 50a.
  • FIG. 5 is a cross-sectional view showing the organic EL layer 23 constituting the organic EL display device 50a.
  • the organic EL display device 50 a includes a display area D for displaying an image defined in a rectangular shape and a frame area F defined around the display area D. Further, as shown in FIG. 1, a terminal portion T is provided at the right end of the frame area F in the drawing.
  • a plurality of sub-pixels P are arranged in a matrix.
  • the sub-pixel P having a red light emitting area Lr for performing red gradation display, green emission for performing green gradation display A sub pixel P having a region Lg and a sub pixel P having a blue light emitting region Lb for performing gradation display of blue are provided adjacent to each other.
  • one pixel is formed by three adjacent sub-pixels P having a red light emitting region Lr, a green light emitting region Lg, and a blue light emitting region Lb.
  • the organic EL display device 50 a includes an organic EL element 30 including a resin substrate layer 10 and a display region D provided on the resin substrate layer 10 via a thin film transistor (TFT) layer 20 a. And have.
  • TFT thin film transistor
  • the resin substrate layer 10 is made of, for example, a polyimide resin or the like, and is provided as a resin substrate.
  • the TFT layer 20a includes a base coat film 11 provided on the resin substrate layer 10, a plurality of first TFTs 9a provided on the base coat film 11, a plurality of second TFTs 9b, and a plurality of capacitors 9c.
  • Each first TFT 9a, each second TFT 9b, and a flattening film 19a provided on each capacitor 9c are provided.
  • a plurality of gate lines 14 are provided so as to extend parallel to each other in the lateral direction in the drawing.
  • a plurality of source lines 18f are provided so as to extend in parallel to each other in the vertical direction in the drawing.
  • a plurality of power supply lines 18g are provided adjacent to the respective source lines 18f so as to extend in parallel in the vertical direction in the figure.
  • the first TFT 9a, the second TFT 9b, and the capacitor 9c are provided in each sub-pixel P.
  • the base coat film 11 is formed of, for example, a single layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.
  • the first TFT 9a is connected to the corresponding gate line 14 and source line 18f in each sub pixel P, as shown in FIG.
  • the first TFT 9 a includes a semiconductor layer 12 a provided in an island shape on the base coat film 11, a gate insulating film 13 provided so as to cover the semiconductor layer 12 a, and a gate insulating film 13.
  • a gate electrode 14a provided thereon so as to overlap with a part of the semiconductor layer 12a, a first interlayer insulating film 15 and a second interlayer insulating film 17 sequentially provided so as to cover the gate electrode 14a, and a second interlayer insulating film
  • a source electrode 18a and a drain electrode 18b provided on the film 17 and arranged to be separated from each other are provided.
  • the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are formed of, for example, a single layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride. .
  • the second TFT 9 b is connected to the corresponding first TFT 9 a and the corresponding power supply line 18 g in each sub-pixel P.
  • the second TFT 9 b includes the semiconductor layer 12 b provided in an island shape on the base coat film 11, the gate insulating film 13 provided to cover the semiconductor layer 12 b, and the gate insulating film 13.
  • a source electrode 18c and a drain electrode 18d provided on the film 17 and arranged to be separated from each other are provided.
  • first TFT 9 a and the second TFT 9 b may be bottom gate type TFTs.
  • capacitor 9c is connected to the corresponding first TFT 9a and the corresponding power supply line 18g in each sub-pixel P, as shown in FIG.
  • capacitor 9c is formed of a lower conductive layer 14c formed in the same layer and of the same material as the gate electrode, and a first interlayer insulating film 15 provided to cover lower conductive layer 14c.
  • An upper conductive layer 16 is provided on the first interlayer insulating film 15 so as to overlap with the lower conductive layer 14c.
  • the planarizing film 19a is formed of an inexpensive organic resin material such as an acrylic resin or an epoxy resin. Further, as shown in FIG. 1 and FIG. 4, a slit S is formed in the planarization film 19 a so as to surround the display region D. The slit is formed over the entire circumference of the display area D, and is formed to surround the second electrode 24 common to the plurality of organic EL elements 30.
  • the organic EL element 30 includes a plurality of first electrodes (reflection electrodes) 21, a plurality of organic EL layers 23, and a second electrode (transparent electrode) 24 sequentially provided on the planarization film 19 a. Is equipped.
  • the plurality of first electrodes 21 are provided as a reflective electrode in a matrix on the planarization film 19 a so as to correspond to the plurality of sub-pixels P.
  • the first electrode 21 is connected to the drain electrode 18d of each second TFT 9b via a contact hole formed in the planarization film 19a.
  • the first electrode 21 has a function of injecting holes into the organic EL layer 23.
  • the first electrode 21 is more preferably formed of a material having a large work function in order to improve the hole injection efficiency into the organic EL layer 23.
  • the first electrode 21 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And metal materials such as lithium fluoride (LiF).
  • the material which comprises the 1st electrode 21 is magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxidation, for example Astatine (AtO 2 ), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), or lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc. It may be an alloy.
  • the material constituting the first electrode 21 is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO) or the like. It may be. Further, the first electrode 21 may be formed by laminating a plurality of layers made of the above materials. In addition, as a material with a large work function, indium tin oxide (ITO), indium zinc oxide (IZO), etc. are mentioned, for example.
  • the edge cover 22 is provided in a grid shape so as to cover the peripheral portion of each first electrode 21 as shown in FIG.
  • the edge cover 22 is provided between the light emitting regions Lr, Lg, and Lb, and functions as a partition for partitioning the light emitting regions Lr, Lg, and Lb.
  • the edge cover 22 for example, the water vapor transmission rate is lower and the heat resistance is lower than that of an acrylic resin or the like which forms the flattening film 19a, such as polyimide resin or SOG (spin on glass) resin.
  • High materials include organic resin materials.
  • water vapor transmission rate means the thing of the water vapor transmission rate measured based on JISK7129: 2008.
  • a material which comprises edge cover 22 a material with few outgassing can be used.
  • outgas refers to the amount of gas released after resin production, and “less outgas” means that the amount of outgas is 5 ppm or less.
  • the edge cover 22 covers the end 19 aa on the display area D side of the flattening film 19 a in the slit S and the end 19 ab on the frame area F side.
  • each organic EL layer 23 is disposed on the respective first electrodes 21 and provided in a matrix so as to correspond to the plurality of sub-pixels.
  • each organic EL layer 23 is provided with a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4 and an electron injection provided sequentially on the first electrode 21.
  • the layer 5 is provided.
  • the hole injection layer 1 is also called an anode buffer layer, and has the function of improving the hole injection efficiency from the first electrode 21 to the organic EL layer 23 by bringing the energy levels of the first electrode 21 and the organic EL layer 23 closer to each other.
  • the material constituting the hole injection layer for example, triazole derivative, oxadiazole derivative, imidazole derivative, polyarylalkane derivative, pyrazoline derivative, phenylenediamine derivative, oxazole derivative, styrylanthracene derivative, fluorenone derivative, Hydrazone derivatives, stilbene derivatives and the like can be mentioned.
  • the hole transport layer 2 has a function of improving the transport efficiency of holes from the first electrode 21 to the organic EL layer 23.
  • a material constituting the hole transport layer 2 for example, porphyrin derivative, aromatic tertiary amine compound, styrylamine derivative, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivative, oxadiazole Derivative, imidazole derivative, polyarylalkane derivative, pyrazoline derivative, pyrazolone derivative, phenylenediamine derivative, arylamine derivative, amine-substituted chalcone derivative, oxazole derivative, styrylanthracene derivative, fluorenone derivative, hydrazone derivative, stilbene derivative, hydrogenated amorphous silicon, Hydrogenated amorphous silicon carbide, zinc sulfide, zinc selenide and the like can be mentioned.
  • the light emitting layer 3 holes and electrons are injected from the first electrode 21 and the second electrode 24, respectively, and holes and electrons are recombined when a voltage is applied by the first electrode 21 and the second electrode 24. It is an area.
  • the light emitting layer 3 is formed of a material having high light emission efficiency.
  • a metal oxinoid compound [8-hydroxy quinoline metal complex], a naphthalene derivative, an anthracene derivative, a diphenyl ethylene derivative, a vinylacetone derivative, a triphenylamine derivative, a butadiene derivative, a coumarin derivative, for example , Benzoxazole derivative, oxadiazole derivative, oxazole derivative, benzimidazole derivative, thiadiazole derivative, benzthiazole derivative, styryl derivative, styrylamine derivative, bisstyrylbenzene derivative, trisstyrylbenzene derivative, perylene derivative, perinone derivative, aminopyrene derivative, Pyridine derivatives, rhodamine derivatives, aquidin derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylene vinylet , Polysilane, and the like.
  • the electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3.
  • a material constituting the electron transport layer 4 for example, as an organic compound, oxadiazole derivative, triazole derivative, benzoquinone derivative, naphthoquinone derivative, anthraquinone derivative, tetracyanoanthraquinodimethane derivative, diphenoquinone derivative, fluorenone derivative And silole derivatives, metal oxinoid compounds and the like.
  • the electron injection layer 5 has a function of bringing the energy levels of the second electrode 24 and the organic EL layer 23 closer to each other and improving the efficiency of electron injection from the second electrode 24 to the organic EL layer 23.
  • the drive voltage of the organic EL element 30 can be lowered.
  • the electron injection layer 5 is also called a cathode buffer layer.
  • a material constituting the electron injection layer 5 for example, lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), barium fluoride Inorganic alkali compounds such as (BaF 2 ), aluminum oxide (Al 2 O 3 ), strontium oxide (SrO) and the like can be mentioned.
  • the 2nd electrode 24 is provided so that each organic EL layer 23 and the edge cover 22 may be covered, as shown in FIG.
  • the second electrode 24 has a function of injecting electrons into the organic EL layer 23. Further, in order to improve the electron injection efficiency to the organic EL layer 23, the second electrode 24 is more preferably made of a material having a small work function.
  • the second electrode 24 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And lithium fluoride (LiF).
  • the second electrode 24 may be, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxide astatine (AtO 2) And lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) May be Also, the second electrode 24 may be made of, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), etc. . In addition, the second electrode 24 may be formed by stacking a plurality of layers made of the above materials.
  • the organic EL display device 50 a includes a sealing film 28 which covers the organic EL element 30.
  • the sealing film 28 is provided to cover the first inorganic film 25 provided to cover the second electrode 24, the organic film 26 provided to cover the first inorganic film 25, and the organic film 26. And the function of protecting the organic EL layer 23 from moisture and oxygen.
  • the first inorganic film 25 and the second inorganic film 27 are made of, for example, silicon nitride (SiN x (x), such as silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), or trisilicon tetranitride (Si 3 N 4 ). Is made of an inorganic material such as silicon carbonitride (SiCN).
  • the organic film 26 is made of, for example, an organic material such as acrylate, polyurea, parylene, polyimide, or polyamide.
  • the planarizing film 19a formed of acrylic resin or the like is covered with the edge cover 22 and the first electrode 21. .
  • the planarizing film 19a can be formed of an organic resin material such as an acrylic resin which is inexpensive compared to an organic resin material such as a polyimide resin forming the edge cover 22, the significant cost of the organic EL display device 50a It is possible to go down.
  • the acrylic resin or the like that forms the planarization film 19a has a high water vapor transmission rate as compared with the organic resin material such as the polyimide resin that forms the edge cover 22, as described above, the planarization film 19a can be used as the edge cover 22. Thus, it is possible to suppress the infiltration of water into the planarizing film 19a.
  • the second electrode 24 of the organic EL element 30 is on the gate insulating film 13 via the connection wiring 31 provided on the interlayer insulating film 17. It is connected to the source wiring (lead wiring) 18f provided in.
  • the planarization film 19 a is covered with the edge cover 22 (and the second electrode 24). Since the configuration is adopted, it is possible to suppress the entry of moisture into the planarization film 19a.
  • the organic EL display device 50a described above turns on the first TFT 9a in each sub-pixel P by inputting a gate signal to the first TFT 9a via the gate line 14, and the gate electrode of the second TFT 9b via the source line 18f.
  • a predetermined voltage corresponding to the source signal is written in 14b and capacitor 9c, the magnitude of the current from power supply line 18g is defined based on the gate voltage of second TFT 9b, and the defined current is supplied to organic EL layer 23 As a result, the light emitting layer 3 of the organic EL layer 23 emits light to display an image.
  • the gate voltage of the second TFT 9b is held by the capacitor 9c, so light emission by the light emitting layer 3 is continued until the gate signal of the next frame is input. Maintained.
  • the glass substrate is It can be manufactured by peeling.
  • the organic EL display device 50a of the present embodiment As described above, according to the organic EL display device 50a of the present embodiment, the following effects can be obtained.
  • the edge cover 22 is formed of a resin having a low water vapor permeability as compared to the resin forming the planarization film 19 a, and the planarization film 19 a is covered by the edge cover 22. Accordingly, since the planarizing film 19a can be formed of an inexpensive organic resin material such as an acrylic resin or an epoxy resin, the organic EL display device 50a can be manufactured at low cost. Further, since it is possible to suppress the entry of moisture into the planarization film 19a, it is possible to prevent the deterioration of the organic EL element 30 due to the moisture of the planarization film 19a in the pixel region A. In addition, it is possible to prevent the deterioration of the organic EL element 30 due to the moisture of the planarization film 19a in the second electrode connection region B.
  • the first electrode 21 covering a part of the surface of the planarization film 19a is provided on the surface of the planarization film 19a.
  • the second electrode 24 covering a part of the surface of the planarization film 19a is provided on the surface of the planarization film 19a. Therefore, as compared with the case where the planarization film 19a is covered only by the edge cover 22, it is possible to further suppress the infiltration of water to the planarization film 19a.
  • FIG. 6 is a cross-sectional view of the frame area F (block area C) of the organic EL display device 50a of the present embodiment.
  • the whole structure of an organic electroluminescence display is the same as the case of the above-mentioned 1st Embodiment, detailed description is abbreviate
  • the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
  • a first dam wall Wa and a second dam wall Wb are provided in the dam region C.
  • the first dam wall Wa is provided so as to surround the display area D
  • the second dam wall Wb is provided so as to surround the first dam wall Wa.
  • the first dam wall Wa contacts the peripheral end of the organic layer 26 forming the sealing film 28 via the first inorganic film 25 forming the sealing film 28. And is provided so as to overlap the peripheral end of the organic layer 26. Further, as shown in FIG. 6, the first dam wall Wa is formed of the same material as the above-described edge cover 22.
  • the second dam wall Wb contacts the peripheral end of the organic layer 26 via the first inorganic layer 25 so as to overlap the edge of the peripheral end of the organic layer 26. It is provided.
  • the second dam wall Wb is provided so as to cover the bottom portion 35 formed of the same material as the flattening film 19 a and the end portion of the bottom portion 35. And a top portion 36 formed of the same material.
  • the bottom portion 35 formed of acrylic resin or the like is covered by the top portion 36 formed of the same material as the edge cover 22. It has become
  • the bottom portion 35 can be formed of an organic resin material such as an inexpensive acrylic resin as compared with the organic resin material such as a polyimide resin forming the top portion 36, the cost of the organic EL display device 50a is significantly reduced.
  • the acrylic resin or the like forming the bottom portion 35 has a water vapor transmission rate higher than that of the organic resin material such as the polyimide resin forming the top portion 36, as described above, the bottom portion 35 is covered by the top portion 36 Because of the configuration, it is possible to suppress the infiltration of water into the bottom portion 35.
  • the following effects can be obtained in addition to the effects (1) and (2).
  • the top portion 36 is formed of a resin having a low water vapor permeability as compared to the resin forming the bottom portion 35, and the end portion of the bottom portion 35 is covered by the top portion 36. Therefore, the bottom portion 35 can be formed of an inexpensive organic resin material such as an acrylic resin or an epoxy resin, and the entry of water into the bottom portion 35 can be suppressed. As a result, it is possible to prevent the deterioration of the organic EL element 30 caused by the moisture of the bottom portion 35 in the blocking region C.
  • FIG. 7 is a cross-sectional view of the frame area F (bending area E) of the organic EL display device 50a of the present embodiment.
  • the whole structure of an organic electroluminescence display is the same as the case of the above-mentioned 1st Embodiment, detailed description is abbreviate
  • the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
  • the organic EL display device 50 a has the resin substrate layer 10, the inorganic layer 42 and the resin layer 37 provided on the surface of the resin substrate layer 10, and the surface of the inorganic layer 42.
  • a plurality of connection wirings 46 are provided, for connecting the source wirings (lead wirings) 18 f, and banks 38 provided so as to cover the connection wirings 46.
  • connection wiring 46 is provided so as to cross the resin layer 37, and the bank 38 is configured to cover the connection wiring 46.
  • the inorganic layer 36 is at least one inorganic layer constituting the TFT layer 20 a, and as shown in FIG. 7, the base coat film 11 sequentially stacked on the resin substrate layer 10, the gate insulating film 13, and the first An interlayer insulating film 40 composed of the interlayer insulating film 15 and the second interlayer insulating film 17 is provided.
  • the inorganic layer 36 is also provided in the frame area F.
  • the base coat film 11 of the inorganic layer 42, the gate insulating film 13 and the interlayer insulating film 40 are not provided, and the opening 41 is formed in the inorganic layer 42 The opening 41 is covered with the resin layer 37.
  • the bending portion G provided with only the resin layer 37, the connection wiring 46, and the bank 38 is configured to be bendable at an angle of up to 180 °.
  • the resin layer 37 is formed of the same material as the above-described planarization film 19a, and the bank 38 is formed of the same material as the above-described edge cover 22.
  • the resin layer 37 formed of an acrylic resin or the like is covered with the bank 38 formed of the same material as the edge cover 22.
  • the resin layer 37 can be formed of an organic resin material such as an inexpensive acrylic resin as compared to the organic resin material such as a polyimide resin forming the bank 38, so that the cost of the organic EL display device 50a can be significantly reduced.
  • the acrylic resin or the like forming the resin layer 37 has a water vapor transmission rate higher than that of the organic resin material such as the polyimide resin or the like forming the bank 38, as described above, the resin layer 37 is covered by the bank 38 Therefore, it is possible to suppress the entry of moisture into the resin layer 37.
  • the following effects can be obtained in addition to the effects (1) to (3).
  • the bank 38 is formed of a resin having a low water vapor permeability as compared with the resin forming the resin layer 37, and the resin layer 37 is covered by the bank 38. Therefore, the resin layer 37 can be formed of an inexpensive organic resin material such as an acrylic resin or an epoxy resin, and the entry of water into the resin layer 37 can be suppressed.
  • the polyimide resin which forms the said edge cover 22 SOG (spin on glass) resin etc. can be used, for example.
  • the organic EL layer having a five-layer laminated structure of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer is exemplified.
  • it may have a three-layer laminated structure of a hole injection layer and hole transport layer, a light emitting layer, and an electron transport layer and electron injection layer.
  • the organic EL display device is exemplified in which the first electrode is an anode and the second electrode is a cathode.
  • the laminated structure of the organic EL layer is reversed and the first electrode is a cathode.
  • the present invention can also be applied to an organic EL display device in which the second electrode is an anode.
  • the organic EL display device in which the electrode of the TFT connected to the first electrode is the source electrode is illustrated, but in the present invention, the electrode of the TFT connected to the first electrode is the drain electrode
  • the present invention can also be applied to an organic EL display device to be called.
  • the organic EL display device is exemplified as the display device, but the present invention relates to a display device including a plurality of light emitting elements driven by current, for example, a light emitting element using a quantum dot containing layer
  • the present invention can be applied to a display device equipped with a QLED (Quantum-dot light emitting diode).
  • the present invention is useful for display devices such as organic EL display devices.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un dispositif d'affichage électroluminescent organique (50a) qui est pourvu : d'un film aplati (19a) ; d'un couvercle latéral (22) qui est disposé sur le film aplati (19a) et qui est formé à partir d'un matériau organique ayant une perméabilité à la vapeur d'eau inférieure à celle d'un matériau organique formant le film aplati (19a) ; et d'un élément EL organique (30) qui est disposé sur le film aplati (19a), une zone d'affichage (D) permettant d'afficher une image et une zone de cadre (F) autour de la zone d'affichage (D) étant définies, et le film aplati (19a) étant recouvert par le couvercle latéral (22).
PCT/JP2017/035056 2017-09-27 2017-09-27 Dispositif d'affichage WO2019064395A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/035056 WO2019064395A1 (fr) 2017-09-27 2017-09-27 Dispositif d'affichage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/035056 WO2019064395A1 (fr) 2017-09-27 2017-09-27 Dispositif d'affichage

Publications (1)

Publication Number Publication Date
WO2019064395A1 true WO2019064395A1 (fr) 2019-04-04

Family

ID=65900924

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/035056 WO2019064395A1 (fr) 2017-09-27 2017-09-27 Dispositif d'affichage

Country Status (1)

Country Link
WO (1) WO2019064395A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332070A (ja) * 2002-05-16 2003-11-21 Seiko Epson Corp 電気光学装置およびその製造方法、ならびに電子機器
JP2005158756A (ja) * 2005-03-07 2005-06-16 Seiko Epson Corp 発光装置
JP2014063765A (ja) * 2014-01-16 2014-04-10 Semiconductor Energy Lab Co Ltd 表示装置
EP3051333A1 (fr) * 2015-01-28 2016-08-03 Samsung Display Co., Ltd. Dispositif d'affichage
JP2016186911A (ja) * 2015-03-27 2016-10-27 パイオニア株式会社 発光装置
JP2017123217A (ja) * 2016-01-04 2017-07-13 株式会社ジャパンディスプレイ 有機ｅｌ表示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332070A (ja) * 2002-05-16 2003-11-21 Seiko Epson Corp 電気光学装置およびその製造方法、ならびに電子機器
JP2005158756A (ja) * 2005-03-07 2005-06-16 Seiko Epson Corp 発光装置
JP2014063765A (ja) * 2014-01-16 2014-04-10 Semiconductor Energy Lab Co Ltd 表示装置
EP3051333A1 (fr) * 2015-01-28 2016-08-03 Samsung Display Co., Ltd. Dispositif d'affichage
JP2016186911A (ja) * 2015-03-27 2016-10-27 パイオニア株式会社 発光装置
JP2017123217A (ja) * 2016-01-04 2017-07-13 株式会社ジャパンディスプレイ 有機ｅｌ表示装置

Similar Documents

Publication Publication Date Title
US10580849B2 (en) Display device including an inorganic residual layer defined in an opening of a bending section
WO2019130480A1 (fr) Dispositif d'affichage et son procédé de fabrication
WO2020026417A1 (fr) Dispositif d'affichage et son procédé de production
US10644096B2 (en) Display device
US10971566B2 (en) Display device including frame wiring in bending section
US11889728B2 (en) Display device
CN112056005B (zh) 显示装置
WO2020174612A1 (fr) Dispositif d'affichage
WO2019026285A1 (fr) Dispositif d'affichage
CN111149434B (zh) 显示装置及其制造方法
WO2019171581A1 (fr) Dispositif d'affichage
WO2019163030A1 (fr) Dispositif d'affichage et son procédé de fabrication
US11793041B2 (en) Display device having a slit passing through the second flattening film
WO2020065922A1 (fr) Dispositif d'affichage et son procédé de production
WO2020039555A1 (fr) Dispositif d'affichage
US10636855B2 (en) Display device
CN113615318A (zh) 显示装置
WO2019187121A1 (fr) Dispositif d'affichage
WO2019186702A1 (fr) Dispositif d'affichage
US20190363152A1 (en) Display device
CN111837455B (zh) 显示装置
WO2019186712A1 (fr) Dispositif d'affichage
WO2019186812A1 (fr) Dispositif d'affichage et son procédé de fabrication
CN111149429B (zh) 显示装置
WO2019142261A1 (fr) Dispositif d'affichage et son procédé de fabrication

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17927031

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17927031

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP