WO2019054171A1 - Dispositifs mems - Google Patents

Dispositifs mems Download PDF

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Publication number
WO2019054171A1
WO2019054171A1 PCT/JP2018/031749 JP2018031749W WO2019054171A1 WO 2019054171 A1 WO2019054171 A1 WO 2019054171A1 JP 2018031749 W JP2018031749 W JP 2018031749W WO 2019054171 A1 WO2019054171 A1 WO 2019054171A1
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WO
WIPO (PCT)
Prior art keywords
base material
wiring layer
nonconductive substrate
mems device
nonconductive
Prior art date
Application number
PCT/JP2018/031749
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English (en)
Japanese (ja)
Inventor
元 松岡
池田　隆志
裕介 田淵
Original Assignee
住友精密工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友精密工業株式会社 filed Critical 住友精密工業株式会社
Priority to JP2019541978A priority Critical patent/JP7136789B2/ja
Publication of WO2019054171A1 publication Critical patent/WO2019054171A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/567—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode
    • G01C19/5677—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially two-dimensional vibrators, e.g. ring-shaped vibrators
    • G01C19/5684—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially two-dimensional vibrators, e.g. ring-shaped vibrators the devices involving a micromechanical structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Definitions

  • the present invention relates to a micro electro mechanical systems (MEMS) device, and more particularly to a MEMS device provided with a getter layer that adsorbs an active gas.
  • MEMS micro electro mechanical systems
  • a MEMS device provided with a getter layer for adsorbing an active gas is known.
  • Such a MEMS device is disclosed, for example, in Japanese Patent Laid-Open No. 2009-28891.
  • JP 2009-28891 A discloses a MEMS device as a ring type vibrating gyroscope.
  • the base material (vibrator) of the MEMS device is bonded to the glass substrate provided with the recess.
  • a sealed space is formed by the concave portion of the glass substrate and the base material.
  • a conductive getter film for adsorbing an active gas (such as oxygen gas) in the enclosed space is formed.
  • the getter film is formed in the recess of the glass substrate by vapor deposition or the like.
  • a part of the getter film is connected to the base material.
  • the getter film is connected to the ground potential through the base material.
  • the reaction portion of the getter film with the active gas changes to a nonconductive portion.
  • one conductive portion of the getter film may be electrically isolated from the other conductive portion. For example, when the nonconductive portion is formed circumferentially and the conductive portion is surrounded by the nonconductive portion, the conductive portion surrounded by the nonconductive portion is electrically isolated from the other conductive portions. .
  • the getter film is connected to the ground potential through the base material by connecting a part of the getter film to the base material.
  • the getter film has an electrically isolated conductive portion
  • the electrical connection between the electrically isolated conductive portion and the base material is broken by the nonconductive portion. Therefore, the charge accumulated in the electrically isolated conductive portion can not be efficiently released. If the charge can not be efficiently released, noise due to the charge accumulated in the getter film can not be sufficiently reduced, so it is difficult to increase the accuracy of the MEMS device.
  • the present invention has been made to solve the problems as described above, and one object of the present invention is to improve the accuracy by reducing the noise caused by the charge accumulated in the getter film. It is possible to provide a possible MEMS device.
  • the MEMS device comprises a nonconductive substrate, a base material of the MEMS device joined to the nonconductive substrate, a nonconductive substrate and a base material An enclosed space to be formed, a wiring layer formed in the enclosed space, electrically connected to the base material, and connected to the ground potential through the base material, and a wiring such that the entire wiring layer is in contact And a conductive getter layer laminated to the layer and adsorbing the active gas.
  • the wiring layer and the getter layer as described above are provided.
  • the electrically isolated conductive portions and the electrically conductive portions are substantially formed by the wiring layer in contact with the getter layer and substantially the entire surface. Electrical connection with the base material can be secured.
  • the charge accumulated in the electrically isolated conductive portion can be efficiently released, so that the noise caused by the charge accumulated in the getter layer can be sufficiently reduced. Thereby, the MEMS device can be highly accurate.
  • the MEMS device comprises a nonconductive substrate, a base material of the MEMS device joined to the nonconductive substrate, a nonconductive substrate and a base material An enclosed space to be formed, a wiring layer formed in the enclosed space, electrically connected to the base material and connected to the constant potential through the base material, and a wiring such that the entire wiring layer is in contact with the wiring layer And a conductive getter layer laminated to the layer and adsorbing the active gas.
  • the wiring layer and the getter layer as described above are provided.
  • the electrically isolated conductive portions and the electrically conductive portions are substantially formed by the wiring layer in contact with the getter layer and substantially the entire surface. Electrical connection with the base material can be secured.
  • the charge accumulated in the electrically isolated conductive portion can be efficiently released, so that the noise caused by the charge accumulated in the getter layer can be sufficiently reduced.
  • the MEMS device can be highly accurate.
  • the wiring layer is sandwiched between the nonconductive substrate and the base material at a part of the bonding portion between the nonconductive substrate and the base material. And by being in contact with the base material, it is electrically connected to the base material.
  • the wiring layer and the base material can be brought into contact with each other more reliably, so that the wiring layer and the base material can be electrically connected more reliably. As a result, the charge accumulated in the getter layer can be more reliably released.
  • the wiring layer is formed so as to be gradually thinner in the thickness direction at the bonding portion between the nonconductive substrate and the base material.
  • the wiring layer is sandwiched between the nonconductive substrate and the base material at the junction between the nonconductive substrate and the base material, the vicinity of the wiring layer sandwiched between the nonconductive substrate and the base material In the above, a slight air gap occurs at the junction between the nonconductive substrate and the base material. Therefore, as described above, if the wiring layer is formed so as to be gradually (progressively) thinned in the thickness direction, the gap formed in the joint portion between the nonconductive substrate and the base material due to the wiring layer is reduced. Can. As a result, it is possible to suppress the occurrence of defects such as bonding defects caused by the voids.
  • the base material includes an inner portion and an outer portion provided structurally separated from each other, and the wiring layer is not The bonded portion between the conductive substrate and the outer portion of the base material is electrically connected to the base member in a state of being sandwiched between the non-conductive substrate and the outer portion of the base material.
  • the wiring layer is sandwiched between the nonconductive substrate and the base material at the junction between the nonconductive substrate and the base material, a slight distortion occurs in the base material due to the thickness of the wiring layer. .
  • the wiring layer when the wiring layer is configured to be sandwiched between the nonconductive substrate and the outer portion of the base material at the junction between the nonconductive substrate and the outer portion of the base material, the inner portion of the base material is formed. Since it is possible to distort only the outer part of the base material without distorting, it is possible to suppress the influence of the distortion on the inner part of the base material. This effect is particularly effective in that when the movable portion of the MEMS device is provided in the inner portion of the base material, the influence of distortion on the movement of the movable portion can be suppressed.
  • the wiring layer preferably includes the nonconductive substrate and the base material substantially along the entire periphery of the bonding portion between the nonconductive substrate and the base material. Sandwiched between according to this structure, the wiring layer and the base material can be more reliably brought into contact with each other, so that the wiring layer and the base material can be electrically connected more reliably.
  • the base material can be substantially uniformly distorted over substantially the entire periphery of the base material, so stress is applied to part of the base material due to the distortion. Concentration can be suppressed. As a result, it is possible to suppress the occurrence of defects such as malfunction due to distortion.
  • the wiring layer is electrically connected to the base material on both sides with respect to the getter layer in a cross sectional view.
  • the wiring layer and the base material can be electrically connected more reliably than in the case where the wiring layer is electrically connected to the base material on one side only with respect to the getter layer. it can.
  • the wiring layer is made of aluminum.
  • the wiring layer made of aluminum can be made to function as a shielding material for electromagnetic waves. As a result, not only the charge of the getter layer can be efficiently dissipated by the wiring layer, but also degradation of the performance of the MEMS device due to the electromagnetic wave can be suppressed.
  • the wiring layer is divided into a plurality. According to this structure, the size of each wiring layer can be reduced, so that the individual wiring layers can be easily manufactured. As a result, the manufacturability of the MEMS device can be improved.
  • the present invention it is possible to provide a MEMS device capable of achieving high precision by reducing the noise caused by the charge accumulated in the getter film.
  • FIG. 1 is an exploded perspective view of a MEMS device according to one embodiment.
  • FIG. 1 is a plan view of a base material of a MEMS device according to one embodiment.
  • FIG. 1 is a schematic cross-sectional view of a MEMS device according to one embodiment.
  • FIG. 4 is a partial enlarged cross-sectional view of FIG. 3; It is a top view showing the wiring layer of the MEMS device by the modification of one embodiment.
  • the thickness direction of the MEMS device 100 is the Z direction
  • one of the thickness directions is the Z1 direction
  • the other direction of the thickness direction is the Z2 direction
  • a direction orthogonal to the thickness direction is taken as an X direction.
  • the MEMS device 100 is an electrostatically driven angular velocity sensor (gyro sensor) that detects an angular velocity based on the Coriolis force.
  • the MEMS device 100 has a housing 10 on one side (Z1 direction side), a housing 20 on the other side (Z2 direction side), a nonconductive substrate 30 on one side, and the other side. And a base material 50 of the MEMS device 100 as a vibrator.
  • the nonconductive substrates 30, 40 and the base material 50 form a sealed space 60 (see FIG. 3).
  • the inside of the enclosed space 60 is decompressed to a substantially vacuum state. Thereby, it is possible to suppress the occurrence of vibration damping in the base material (vibrator) 50 due to the viscosity of the gas in the enclosed space 60.
  • the housing 10 on one side constitutes a lid.
  • the housing 20 on the other side constitutes an installation stand for installing the nonconductive substrates 30 and 40 and the base material 50.
  • Housings 10 and 20 are joined together, for example by welding.
  • the nonconductive substrates 30, 40 and the base material 50 are sealed in the housings 10 and 20.
  • the nonconductive substrates 30, 40 and the base material 50 are isolated from the outside, it is possible to suppress the occurrence of the operation failure of the base material (vibrator) 50 due to the penetration of moisture or the like.
  • Non-conductive substrate 30 on one side (Z1 direction side) and the nonconductive substrate 40 on the other side (Z2 direction side) are, for example, nonconductive glass substrates.
  • nonconductive substrates 30 and 40 may be substrates obtained by thermally oxidizing the surface of a Si substrate (silicon wafer).
  • the nonconductive substrates 30 and 40 are configured to sandwich the base material 50 in the thickness direction (Z direction).
  • non-conductive means that the electrical insulation is high. That is, the term "non-conductive" does not mean that it conducts electricity at all, but it is a concept including the property of conducting electricity somewhat depending on the applied voltage.
  • the nonconductive substrate 30 is disposed on one side (the Z1 direction side) with respect to the base material 50.
  • the nonconductive substrate 30 is bonded to the surface on one side of the base material 50.
  • the nonconductive substrate 30 and the surface on one side of the base material 50 are bonded to each other in the thickness direction (Z direction), for example, by anodic bonding.
  • the nonconductive substrate 30 and the base material 50 may be bonded to each other by a bonding material such as solder.
  • the nonconductive substrate 30 includes a central bonding portion 31 and an outer peripheral bonding portion 32.
  • the central bonding portion 31 is bonded to a central portion 53 (described later) of the base material 50 on the surface on one side of the base material 50. That is, the central bonding portion 31 supports the central portion 53 of the base material 50 from one side.
  • the central bonding portion 31 is formed to project from one side to the other side.
  • the central bonding portion 31 is formed at the center position of the nonconductive substrate 30 in the X direction.
  • the outer periphery joint portion 32 is joined to an outer portion (peripheral portion) 58 described later of the base material 50 and the electrode portions 57a to 57h on the surface on one side (Z1 direction side) of the base material 50. That is, the outer circumferential joint portion 32 supports the outer side portion 58 of the base material 50 and the electrode portions 57a to 57h from one side.
  • the outer circumferential joint portion 32 is formed in a circumferential shape.
  • the outer circumferential bonding portion 32 is formed at the outer circumferential position of the nonconductive substrate 30 in the X direction.
  • the nonconductive substrate 30 also includes a recess 33.
  • the recess 33 is formed to be recessed from the other side (the Z2 direction side, the side on which the base material 50 is disposed) to the one side (the Z1 direction side, the side opposite to the side on which the base material 50 is disposed).
  • the recess 33 is formed in a substantially annular shape so as to surround the central bonding portion 31.
  • the recess 33 is formed on the other side of the nonconductive substrate 30.
  • the recess 33 is formed, for example, by wet etching.
  • the recess 33 constitutes a part of the closed space 60.
  • the nonconductive substrate 30 also includes a plurality of through holes 34.
  • the through holes 34 are formed to penetrate the nonconductive substrate 30 in the thickness direction (Z direction).
  • the through hole 34 is a taper that gradually tapers from one side (Z1 direction side, the side opposite to the base material 50 being disposed) to the other side (Z2 direction side, the side where the base material 50 is disposed) It is formed in the shape of a circle.
  • the through holes 34 are formed by sandblasting, for example.
  • An electrode (a through electrode) 35 made of a metal material is disposed in the through hole 34.
  • the through holes 34 and the electrodes 35 are provided at positions corresponding to later-described electrode portions 56 and 57 a to 57 h and the outer portion (outer peripheral portion) 58 of the base material 50 in plan view (see FIG. 2). In FIG. 1, the through holes 34 and the electrodes 35 are not shown. Further, in FIG. 2, for ease of understanding, the position corresponding to the electrode 35 in the base material 50 is illustrated by a square (solid line).
  • the nonconductive substrate 40 is disposed on the other side (the Z2 direction side) with respect to the base material 50.
  • the nonconductive substrate 40 is bonded to the other surface of the base material 50.
  • the nonconductive substrate 40 and the surface on the other side of the base material 50 are bonded to each other in the thickness direction (Z direction), for example, by anodic bonding.
  • the nonconductive substrate 40 and the base material 50 may be bonded to each other by a bonding material such as solder.
  • the nonconductive substrate 40 includes an outer peripheral bonding portion 41.
  • the outer periphery joint portion 41 is joined to the outer portion (peripheral portion) 58 of the base material 50 on the surface on the other side (the Z2 direction side) of the base material 50. That is, the outer circumferential joint portion 41 supports the outer portion 58 of the base material 50 from the other side.
  • the outer circumferential joint portion 41 is formed in a circumferential shape.
  • the outer circumferential bonding portion 41 is formed at the outer circumferential position of the nonconductive substrate 40 in the X direction.
  • the nonconductive substrate 40 also includes a recess 42.
  • the recess 42 is formed so as to be recessed from one side (the Z1 direction side, the side on which the base material 50 is disposed) to the other side (the Z2 direction side, the side opposite to the side on which the base material 50 is disposed).
  • the recess 42 is formed in a substantially circular shape.
  • the recess 42 is formed in a portion on one side of the nonconductive substrate 40.
  • the recess 42 is formed, for example, by wet etching.
  • the recess 42 constitutes a part of the closed space 60.
  • the side part 42a of the recessed part 42 is formed circumferentially.
  • the side portion 42 a is formed to be continuous with the outer peripheral joint portion 41.
  • the bottom 42 b of the recess 42 is formed in a substantially circular shape.
  • the bottom 42 b is formed to be continuous with the side 42 a.
  • a protrusion part may be formed in the center position of the X direction.
  • the base material 50 is a ring-type vibrator.
  • the base material 50 is made of, for example, silicon processed by trench etching.
  • the base material 50 includes a ring portion 51, a plurality of (eight) support portions (leg portions) 52, a central portion 53, and a plurality of (eight) etching remaining portions 54. It is.
  • the ring portion 51, the plurality of support portions 52, the central portion 53, and the plurality of unetched portions 54 are partitioned by a trench (groove-like through hole) 55.
  • the ring portion 51, the plurality of support portions 52, the central portion 53, and the plurality of unetched portions 54 are integrally formed.
  • the ring portion 51 and the support portion 52 constitute a movable portion of the base material 50.
  • the ring portion 51 and the support portion 52 are configured to be flexible and deformable.
  • the ring portion 51 is formed in a substantially annular shape (substantially annular shape).
  • the ring portion 51 is supported by a plurality of support portions 52.
  • the plurality of support portions 52 are formed to extend substantially radially from the central portion 53 of the base material 50.
  • the plurality of supports 52 have the same shape.
  • Each of the plurality of support portions 52 is formed in an elongated beam shape.
  • the plurality of support portions 52 are configured such that one end is connected to the central portion 53 and the other end is connected to the ring portion 51.
  • the central portion 53 is formed in a substantially circular shape.
  • the central portion 53 is formed at the central position of the base material 50.
  • the central portion 53 constitutes a fixing portion of the base material 50.
  • the central portion 53 is supplied with DC power from a DC power supply unit (not shown) via the corresponding electrode 35.
  • DC power from the DC power supply unit is also supplied to the ring unit 51, the plurality of support units 52, and the plurality of unetched units 54 via the central unit 53.
  • the base material 50 includes a plurality of (16) natural frequency adjustment electrode parts 56.
  • the natural frequency adjustment electrode unit 56 is an electrode unit for adjusting so that the natural frequency of the primary vibration and the natural frequency of the secondary vibration coincide with each other.
  • the natural frequency adjustment electrode portion 56 is formed between the ring portion 51 and the etching remaining portion 54. Direct-current power from a direct-current power supply unit (not shown) is supplied to the natural frequency adjustment electrode unit 56 via the corresponding electrode 35.
  • base material 50 includes a pair of primary vibration driving electrode portions 57a and 57b, a pair of primary vibration detection electrode portions 57c and 57d, a pair of secondary vibration detection electrode portions 57e and 57f, and a pair of secondary vibration detection electrode portions 57e and 57f.
  • the second vibration canceling electrode portions 57g and 57h are included.
  • the pair of primary vibration drive electrode portions 57 a and 57 b are electrode portions for driving movable portions such as the ring portion 51 and the support portion 52.
  • the pair of primary vibration detection electrode portions 57c and 57d are electrode portions for detecting primary vibration caused by driving of the movable portion.
  • the pair of secondary vibration detection electrode portions 57e and 57f are electrode portions for detecting secondary vibration due to Coriolis force.
  • the pair of secondary vibration canceling electrode portions 57g and 57h are electrode portions for canceling secondary vibration.
  • the primary vibration drive electrode portions 57a and 57b face each other in the X direction. As such, they are formed outside the ring portion 51.
  • the primary vibration driving electrode portions 57a and 57b and the secondary vibration canceling electrode portions 57g and 57h are supplied with alternating current power from an alternating current power supply unit (not shown) through the corresponding electrodes 35.
  • the primary vibration driving electrode portions 57a and 57b AC power is supplied to the primary vibration driving electrode portions 57a and 57b.
  • primary vibration is generated in the base material (vibrator) 50 by electrostatic attraction between the ring portion 51 and the primary vibration drive electrode portions 57a and 57b.
  • the primary vibration is detected by the primary vibration detection electrode portions 57c and 57d.
  • Coriolis force is generated, whereby secondary vibration corresponding to the angular velocity is generated in the base material 50. Then, this secondary vibration is detected by the secondary vibration detection electrode portions 57e and 57f.
  • the current generated by the change in capacitance caused by the secondary vibration is detected by the secondary vibration detection electrode portions 57e and 57f. Further, by applying a potential difference between the ring portion 51 and the natural frequency adjustment electrode unit 56, the natural frequency of the primary vibration and the natural frequency of the secondary vibration are adjusted to coincide with each other. Then, in accordance with the detection results of the secondary vibration detection electrode portions 57e and 57f, AC power that cancels the secondary vibration is supplied to the secondary vibration cancellation electrode portions 57g and 57h. Then, the angular velocity is acquired (detected) based on the AC power.
  • the base material 50 also includes an outer portion (peripheral portion) 58.
  • the outer portion 58 is circumferentially formed.
  • the outer portion 58 is formed at the outermost position of the base material 50.
  • the outer portion 58 constitutes a fixing portion of the base material 50.
  • the outer portion 58 is connected to the ground potential (reference potential) via the corresponding electrode 35.
  • the outer portion 58 is divided into the trenches 55 so that the inner portion 59 located inside the outer portion 58 is provided structurally (physically and electrically) separately from each other.
  • the inner portion 59 includes a ring portion 51, a support portion 52, a central portion 53, an etching remaining portion 54, and the electrode portions 56, 57a to 57h.
  • a getter layer 70 is formed in the enclosed space 60.
  • the getter layer 70 is configured to adsorb an active gas (oxygen, hydrogen, nitrogen, methane, carbon monoxide, carbon dioxide, etc.).
  • the getter layer 70 adsorbs the active gas, whereby the degree of vacuum in the enclosed space 60 can be maintained at a high level.
  • the getter layer 70 is made of, for example, titanium formed by vapor deposition, sputtering or the like.
  • the getter layer 70 may be made of a metal material such as zirconium or vanadium.
  • the getter layer 70 is formed in a thin film of about several hundreds of nm.
  • the getter layer 70 has conductivity.
  • the getter layer 70 is formed such that the surface on one side (the Z1 direction side) is exposed in the closed space 60. In the getter layer 70, a reactive portion adsorbed and reacted with the active gas is changed to a nonconductive portion (such as an oxide). Therefore, getter layer 70 has both the conductive portion and the nonconductive portion depending on the reaction state with the active gas.
  • the wiring layer 80 for releasing the charge accumulated in the getter layer 70 is formed.
  • Wiring layer 80 is made of, for example, aluminum formed by vapor deposition, sputtering or the like.
  • the wiring layer 80 may be made of a metal material such as gold, silver, copper, an aluminum alloy (aluminum-silicon alloy, aluminum-copper alloy, etc.).
  • the wiring layer 80 is formed in a thin film of about several hundreds of nm.
  • the wiring layer 80 also has conductivity.
  • the getter layer 70 is stacked on the wiring layer 80 such that substantially the entire getter layer 70 is in contact.
  • the wiring layer 80 is in contact with substantially the entire surface (surface on the Z2 direction side) opposite to the surface (surface on the Z1 direction side) exposed in the sealed space 60 of the getter layer 70.
  • the wiring layer 80 is also electrically connected to the base material 50.
  • the wiring layer 80 is connected to the ground potential through the base material 50 and the corresponding electrode 35.
  • the getter layer 70 is connected to the ground potential through the wiring layer 80, the base material 50 and the corresponding electrode 35.
  • the charge accumulated in the getter layer 70 moves in the order of the wiring layer 80, the base material 50, the electrode 35, and the ground potential. Thereby, the charge accumulated in the getter layer 70 can be released.
  • the wiring layer 80 is formed (stacked) on the entire recess 42 of the nonconductive substrate 40 and the inner peripheral edge of the outer peripheral bonding portion 41 of the nonconductive substrate 40. That is, the wiring layer 80 is formed in a shape along the concave portion 42 of the nonconductive substrate 40 and the inner peripheral edge portion of the outer peripheral bonding portion 41 of the nonconductive substrate 40. Specifically, the wiring layer 80 includes a first portion 81, a second portion 82, and a third portion 83. The first portion 81, the second portion 82 and the third portion 83 are integrally formed.
  • the first portion 81 is a portion of the wiring layer 80 formed on the bottom portion 42 b of the recess 42 of the nonconductive substrate 40. That is, the first portion 81 is formed in a shape along the bottom 42 b of the recess 42.
  • the getter layer 70 is stacked on the first portion 81.
  • the first portion 81 is electrically connected to the getter layer 70 by being in contact with the getter layer 70.
  • the second portion 82 is a portion of the wiring layer 80 formed on the side portion 42 a of the recess 42 of the nonconductive substrate 40. That is, the second portion 82 is formed in a shape along the side portion 42 a of the recess 42. The second portion 82 connects the first portion 81 and the third portion 83.
  • the third portion 83 is a portion of the wiring layer 80 formed on the inner peripheral edge portion of the outer peripheral bonding portion 41 of the nonconductive substrate 40. That is, the third portion 83 is formed in a shape along the inner peripheral edge portion of the outer peripheral bonding portion 41 of the nonconductive substrate 40.
  • the third portion 83 is an end of the wiring layer 80.
  • the third portion 83 is electrically connected to the base material 50 by being in contact with the inner peripheral edge of the outer portion 58 of the base material 50.
  • the third portion 83 of the wiring layer 80 is a part of the bonding portion 90 between the nonconductive substrate 40 and the base material 50 (inner peripheral edge of the bonding portion 90)
  • the non-conductive substrate 40 and the base material 50 are sandwiched in the thickness direction (Z direction).
  • a slight air gap S is formed in the vicinity of the third portion 83 of the wiring layer 80 in the bonding portion 90.
  • the bonding portion 90 is a bonding portion between the outer peripheral bonding portion 41 of the nonconductive substrate 40 and the outer portion 58 of the base material 50. Therefore, the third portion 83 of the wiring layer 80 is in the thickness direction (Z direction) of the nonconductive substrate 40 and the base material 50 at the bonding portion 90 between the nonconductive substrate 40 and the outer portion 58 of the base material 50. It is pinched.
  • the third portion 83 of the wiring layer 80 is sandwiched by the inner peripheral edge portion of the bonding portion 90, it is not sandwiched by the outer portion of the bonding portion 90.
  • the length L1 of the sandwiched portion of the wiring layer 80 is, for example, about 50 ⁇ m.
  • the entire length L2 of the bonding portion 90 is, for example, about 200 ⁇ m.
  • the length L3 of the bonding region of the bonding portion 90 (the length in the X direction of the region actually bonded in the bonding portion 90) L3 is preferably 100 ⁇ m or more.
  • the influence of the wiring layer 80 can be reduced if the length L3 is equal to or greater than the predetermined length. Can be suppressed.
  • each component is exaggerated and shown in figure for easy understanding. For this reason, in FIG. 4, the length L1, the length L2, and the length L3 do not reflect the actual lengths.
  • the third portion 83 of the wiring layer 80 contacts the outer portion 58 of the base material 50 in the thickness direction while being sandwiched in the thickness direction between the nonconductive substrate 40 and the outer portion 58 of the base material 50. Are electrically connected to the base material 50.
  • the third portion 83 of the wiring layer 80 is sandwiched between the nonconductive substrate 40 and the base material 50 on both sides in the X direction with respect to the getter layer 70 in cross sectional view (see FIG. 3) . That is, the third portion 83 of the wiring layer 80 is electrically connected to the base material 50 on both sides in the X direction with respect to the getter layer 70 in cross sectional view.
  • the circumferential third portion 83 of the wiring layer 80 is sandwiched between the nonconductive substrate 40 and the base material 50 on substantially the entire periphery of the bonding portion 90. That is, the third portion 83 of the wiring layer 80 is in contact with the base material 50 and is electrically connected to the base material 50 along substantially the entire periphery.
  • the third portion 83 of the wiring layer 80 is formed so as to become gradually thinner in the thickness direction (Z direction) toward the tip of the bonding portion 90. That is, the third portion 83 of the wiring layer 80 is formed so as to decrease in thickness toward the tip of the bonding portion 90.
  • the surface 83a of the third portion 83 on the side of the base material 50 is the side of the base 50 on the outer peripheral bonding portion 41 of the nonconductive substrate 40. It is formed to be gradually thinner in the thickness direction so as to approach the joint surface 41a.
  • the surface 83a of the third portion 83 on the base material 50 side is smooth with the bonding surface 41a of the outer peripheral bonding portion 41 of the nonconductive substrate 40 on the base material 50 side. It is connected to the.
  • the third portion 83 of the wiring layer 80 is formed to be gradually thinner in the thickness direction (Z direction), for example, by wet etching.
  • the wiring layer 80 is made of aluminum which can be easily processed, the third portion 83 of the wiring layer 80 can be easily processed to be gradually thinner.
  • the MEMS device 100 is provided with the wiring layer 80 and the getter layer 70.
  • electrically isolated electric conductivity is achieved by interconnection layer 80 in contact with getter layer 70 substantially entirely. Electrical connection between the sexing part and the base material 50 can be secured.
  • the MEMS device 100 can be highly accurate. That is, as in the present embodiment, when the MEMS device 100 is a sensor (angular velocity sensor), the physical quantity (angular velocity) can be detected more accurately.
  • the base material 50 and the getter layer 70 are arranged as far apart as possible by increasing the depth of the recess 42 of the nonconductive substrate 40 provided with the getter layer 70. .
  • the wiring layer 80 as described above, noise due to charges accumulated in the getter layer 70 can be sufficiently reduced. Can also be arranged near the base material 50. As a result, the depth of the recess 42 of the nonconductive substrate 40 provided with the getter layer 70 can be made as small as possible. This brings about the advantage that the time required for the step of forming the recess 42 of the nonconductive substrate 40 can be reduced in the manufacturing process of the MEMS device 100.
  • the wiring layer 80 is sandwiched between the nonconductive substrate 40 and the base material 50 at a part of the bonding portion 90 between the nonconductive substrate 40 and the base material 50.
  • the base material 50 is electrically connected.
  • the wiring layer 80 and the base material 50 can be more reliably brought into contact with each other, so that the wiring layer 80 and the base material 50 can be electrically connected more reliably.
  • the charge accumulated in getter layer 70 can be released more reliably.
  • the wiring layer 80 is formed so as to be gradually thinner in the thickness direction at the bonding portion 90 between the nonconductive substrate 40 and the base material 50.
  • the wiring layer 80 is sandwiched between the nonconductive substrate 40 and the base material 50 at the bonding portion 90 between the nonconductive substrate 40 and the base material 50, the nonconductive substrate 40 and the base material 50 In the vicinity of the wiring layer 80 sandwiched therebetween, a slight air gap S is generated in the bonding portion 90 between the nonconductive substrate 40 and the base material 50. Therefore, as described above, by forming the wiring layer 80 so as to be gradually (progressively) thinner in the thickness direction, the bonding portion 90 between the nonconductive substrate 40 and the base material 50 due to the wiring layer 80 is formed. The resulting void S can be reduced. As a result, it is possible to suppress the occurrence of defects such as joint defects caused by the void S.
  • the wiring layer 80 is formed of the nonconductive substrate 40 and the outer portion 58 of the base material 50.
  • the base material 50 is electrically connected.
  • the mother layer is caused by the thickness of the wiring layer 80. A slight distortion occurs in the material 50.
  • the wiring layer 80 is configured to be sandwiched between the nonconductive substrate 40 and the outer portion 58 of the base material 50 at the bonding portion 90 between the nonconductive substrate 40 and the outer portion 58 of the base material 50.
  • it is possible to distort only the outside portion 58 of the base material 50 without distorting the inside portion 59 of the base material 50, thereby suppressing the influence of the distortion on the inside portion 59 of the base material 50.
  • This effect affects the movement of the movable portion when the movable portion (the ring portion 51 and the support portion 52) of the MEMS device 100 is provided on the inner portion 59 of the base material 50 as in the present embodiment. Is particularly effective in that it can be suppressed.
  • the wiring layer 80 is sandwiched between the nonconductive substrate 40 and the base material 50 on substantially the entire periphery of the bonding portion 90 between the nonconductive substrate 40 and the base material 50.
  • the wiring layer 80 and the base material 50 can be more reliably brought into contact with each other, so that the wiring layer 80 and the base material 50 can be electrically connected more reliably.
  • base material 50 due to wiring layer 80 since base material 50 can be distorted substantially uniformly over substantially the entire periphery of base material 50, base material 50 due to the distortion. It is possible to suppress stress concentration on part of As a result, it is possible to suppress the occurrence of defects such as malfunction due to distortion.
  • the wiring layer 80 is electrically connected to the base material 50 on both sides with respect to the getter layer 70 in a cross sectional view.
  • the wiring layer 80 and the base material 50 are more reliably electrically connected as compared to the case where the wiring layer 80 is electrically connected to the base material 50 on one side only with respect to the getter layer 70.
  • the wiring layer 80 is made of aluminum.
  • the wiring layer 80 made of aluminum can be made to function as a shielding material for electromagnetic waves.
  • the wiring layer 80 can not only efficiently release the charge of the getter layer 70, but also can suppress deterioration of the performance of the MEMS device 100 due to the electromagnetic wave.
  • the present invention is not limited to this.
  • the present invention may be applied to a MEMS device which is an inertial sensor as an acceleration sensor, and a MEMS device which is another inertial sensor.
  • the present invention may also be applied to MEMS devices other than inertial sensors.
  • the getter layer 70 and the wiring layer 80 are provided in the recess 42 of the nonconductive substrate 40 on the other side in the above embodiment, the present invention is not limited to this.
  • the getter layer 70 and the wiring layer 80 may be provided in the recess 33 of the nonconductive substrate 30 on one side.
  • the wiring layer is sandwiched between the nonconductive substrate and the base material at the bonding portion between the nonconductive substrate and the base material, but the present invention is limited to this. Absent.
  • the wiring layer may not be sandwiched between the nonconductive substrate and the base material at the bonding portion between the nonconductive substrate and the base material. In this case, the wiring layer may be electrically connected to the base material at a position other than the bonding portion.
  • the wiring layer is sandwiched between the nonconductive substrate and the outer portion of the base material at the junction between the nonconductive substrate and the outer portion of the base material.
  • the wiring layer is the inner portion of the nonconductive substrate and the base material at the junction of the nonconductive substrate and the inner portion of the base material. And may be sandwiched between In this case, the wiring layer may be electrically connected to the base material by being in contact with the inner part of the base material while being sandwiched between the nonconductive substrate and the inner part of the base material.
  • the wiring layer is formed so as to be gradually thinner in the thickness direction at the junction between the nonconductive substrate and the base material, but the present invention is not limited to this.
  • the wiring layer may be formed to have a uniform thickness at the bonding portion between the nonconductive substrate and the base material.
  • the wiring layer is sandwiched between the nonconductive substrate and the base material substantially along the entire periphery of the bonding portion between the nonconductive substrate and the base material. It is not restricted to this.
  • the nonconductive substrate may be sandwiched between the nonconductive substrate and the base material.
  • the wiring layer 180 is divided into a plurality (two).
  • the wiring layer 180 includes a substantially semicircular wiring layer 181 constituting half of the wiring layer, and a substantially semicircular wiring layer 182 constituting the other half of the wiring layer.
  • Wiring layers 181 and 182 are arranged at a distance D (D> 0). That is, the wiring layers 181 and 182 are not in contact with each other (not connected).
  • the wiring layers 181 and 182 are formed in a substantially circular shape.
  • the wiring layers 181 and 182 are each electrically connected to the base material and connected to the ground potential via the base material.
  • the getter layer 70 is stacked on the wiring layers 181 and 182 so that the whole is in contact with the wiring layers 181 and 182.
  • the getter layer 70 electrically connects the wiring layers 181 and 182.
  • the wiring layer 180 is divided into a plurality (two). As a result, the size of the individual wiring layers 181 and 182 can be reduced, so that the individual wiring layers 181 and 182 can be easily manufactured. As a result, the manufacturability of the MEMS device can be improved. Further, in the modification, as described above, the wiring layers 181 and 182 which are not in contact with each other are electrically connected by the getter layer 70. As a result, by flowing a current from one of the wiring layers 181 and 182 to the other, a conduction test via the getter layer 70 can be performed. Thereby, the conduction failure of the wiring layer 181 or 182 can be easily confirmed.
  • the wiring layer is divided into two, but the present invention is not limited to this. In the present invention, the wiring layer may be divided into three or more.
  • the wiring layer is connected to the ground potential through the base material.
  • the present invention is not limited to this.
  • the wiring layer may be connected to a constant potential other than the ground potential via the base material.
  • Nonconductive Substrate 50 Base Material of MEMS Device 60 Sealed Space 70 Getter Layer 80, 180, 181, 182 Wiring Layer 90 Junction 100 MEMS Device

Abstract

La présente invention concerne un dispositif MEMS (100) pourvu : d'une couche de câblage (80) qui est électriquement connectée à un matériau de base (50) et qui est connectée au potentiel de terre par l'intermédiaire du matériau de base (50); et d'une couche de dégazeur conductrice (70) qui est stratifiée sur la couche de câblage de telle sorte que la quasi-totalité de la couche de dégazeur est en contact avec la couche de câblage, et qui adsorbe un gaz actif.
PCT/JP2018/031749 2017-09-15 2018-08-28 Dispositifs mems WO2019054171A1 (fr)

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JP2017178146 2017-09-15
JP2017-178146 2017-09-15

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WO2019054171A1 true WO2019054171A1 (fr) 2019-03-21

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006116694A (ja) * 2004-09-23 2006-05-11 Motorola Inc ゲッターシールドを有する密閉マイクロデバイス
JP2009028891A (ja) * 2007-06-27 2009-02-12 Sumitomo Precision Prod Co Ltd ゲッター膜を有する密閉空間内に形成されたｍｅｍｓデバイス

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006116694A (ja) * 2004-09-23 2006-05-11 Motorola Inc ゲッターシールドを有する密閉マイクロデバイス
JP2009028891A (ja) * 2007-06-27 2009-02-12 Sumitomo Precision Prod Co Ltd ゲッター膜を有する密閉空間内に形成されたｍｅｍｓデバイス

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JP7136789B2 (ja) 2022-09-13

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