WO2019037491A1 - 光刻胶组合物、金属图案以及阵列基板的制备方法 - Google Patents

光刻胶组合物、金属图案以及阵列基板的制备方法 Download PDF

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WO2019037491A1
WO2019037491A1 PCT/CN2018/087881 CN2018087881W WO2019037491A1 WO 2019037491 A1 WO2019037491 A1 WO 2019037491A1 CN 2018087881 W CN2018087881 W CN 2018087881W WO 2019037491 A1 WO2019037491 A1 WO 2019037491A1
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photoresist composition
resin
chelating resin
mass percentage
composition according
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PCT/CN2018/087881
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English (en)
French (fr)
Inventor
李伟
袁广才
周斌
王东方
成军
胡迎宾
夏晶晶
苏同上
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京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Priority to US16/320,041 priority Critical patent/US11592742B2/en
Publication of WO2019037491A1 publication Critical patent/WO2019037491A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/016—Diazonium salts or compounds
    • G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
    • G03F7/0212—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the diazo resins or the polymeric diazonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/016—Diazonium salts or compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

Definitions

  • Embodiments of the present disclosure relate to a photoresist composition, a method of fabricating the same, a method of fabricating a metal pattern, and a method of fabricating an array substrate.
  • Photoresist refers to a resist film material whose solubility changes by irradiation or irradiation of ultraviolet light, electron beam, particle beam, x-ray, or the like. Photoresists are key materials for completing photolithography processes. The photoresist can be classified into a positive photoresist and a negative photoresist depending on the change in solubility of the photoresist before and after exposure. A positive photoresist is increased in solubility by exposure, and a negative photoresist is reduced in solubility by exposure.
  • the photolithography process is an indispensable process in the fabrication process of the array substrate, and a pattern of a desired shape can be obtained.
  • the implementation of the photolithography process is inseparable from the photoresist.
  • the main component of the photoresist is a photosensitive group-containing polymer. Under the irradiation of ultraviolet light or the like, the photosensitive group of the light-receiving portion of the photoresist is chemically changed, resulting in the photosensitive portion and the light-shielding portion of the photoresist.
  • the solubility in the developer is different, so that a pattern of a desired shape can be obtained after development.
  • At least one embodiment of the present disclosure provides a photoresist composition
  • a photoresist composition comprising a substrate material and an ion adsorbent, wherein the ion adsorbent is a chelate resin.
  • the chelating resin includes an acrylic chelating resin, a glycine based chelating resin, a thiol chelating resin, a polyacrylic fluorenyl chelating resin, and 8 a combination of any one or more of a hydroxyquinoline-based chelating resin, a polyvinylpyridine chelating resin, and a Schiff base-based chelating resin.
  • the chelating resin comprises polyacrylic acid ethylenediamine oxalate chelate resin, poly 4-glycine-methylene styrene chelating resin , polyacrylic acid-3-mercaptopropyl glycol ester chelating resin, poly 6-vinyl-8-hydroxyquinoline chelating resin, poly-2-carboxy-4-vinylpyridine chelate resin and poly-4-vinylpyridine chelate A combination of any one or more of the resins.
  • the substrate material includes a film-forming resin, a sensitizer, and an organic solvent
  • the photoresist composition is a positive photoresist composition or Negative photoresist composition.
  • the photoresist composition provided by at least one embodiment of the present disclosure further includes an additive, wherein the film-forming resin has a mass percentage of 5 to 30%, and the sensitizer has a mass percentage of 2 to 5. %, the ion adsorbent has a mass percentage of 0.1 to 2%, the organic solvent has a mass percentage of 62 to 93%, and the additive has a mass percentage of 0.1 to 1%.
  • the organic solvent includes N-methylpyrrolidone, glycol ether, ethylene glycol alkyl ether acetate, diethylene glycol, propylene glycol monomethyl Ethyl acetate, ethoxyethyl acetate, dimethoxyacetaldehyde, propylene glycol methyl ether acetate, ethyl 3-ethoxypropionate, propylene glycol methyl ether (PM) and ethylene glycol ethyl ether Or a combination of multiples.
  • the film-forming resin includes a phenol resin, a silicone resin, Or a combination of any one or more of polyimides.
  • the sensitizer is a diazonaphthoquinone type photosensitizer.
  • the diazonaphthoquinone-based photosensitizer comprises: 2,3,4-trihydroxybenzophenone-1,2-diazonaphthoquinone Any one or a combination of two of -5-sulfonate and 2,3,4,4'-tetrahydroxybenzophenone-1,2-diazonaphthoquinone-5-sulfonate.
  • the film-forming resin is an organic ester monomer and an organic acid.
  • a copolymer formed by a monomer is an organic ester monomer and an organic acid.
  • the organic ester monomer includes methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, a combination of any one or more of isobutyl methacrylate and isoamyl acrylate;
  • the organic acid monomer including methacrylic acid, crotonic acid, cinnamic acid, isocinnamic acid, ⁇ -methylcinnamic acid A combination of any one or more of methyl acrylate and methyl crotonate.
  • the sensitizer includes any one of nitroaniline, anthracene, benzophenone, and N-acetyl-4-nitronaphthylamine or A variety of combinations.
  • the negative photoresist composition further includes a polymerizable monomer including dipentaerythritol pentaacrylate, dipentaerythritol A combination of any one or more of acrylate, urethane acrylate, and pentoxide tetraol tetraacrylate.
  • a polymerizable monomer including dipentaerythritol pentaacrylate, dipentaerythritol A combination of any one or more of acrylate, urethane acrylate, and pentoxide tetraol tetraacrylate.
  • the negative photoresist composition further includes a polymerization inhibitor, wherein the polymerization inhibitor comprises hydroquinone, 2-second butyl A combination of any one or more of benzyl-4,6-dinitrophenol, p-tert-butyl catechol, and 2,5-di-tert-butyl hydroquinone.
  • the polymerization inhibitor comprises hydroquinone, 2-second butyl A combination of any one or more of benzyl-4,6-dinitrophenol, p-tert-butyl catechol, and 2,5-di-tert-butyl hydroquinone.
  • the additive includes at least one of a leveling agent, an antifoaming agent, and a stabilizer.
  • At least one embodiment of the present disclosure also provides a method of preparing a photoresist composition comprising a mixed substrate material and an ion adsorbent, wherein the ion adsorbent is a chelate resin.
  • the substrate material includes a film-forming resin, a sensitizer, an organic solvent, and an additive.
  • the film-forming resin has a mass percentage of 5 to 30%
  • the sensitizer has a mass percentage of 2 to 5%
  • the ion adsorption is 0.1 to 2%
  • the mass percentage of the organic solvent is 62 to 93%
  • the mass percentage of the additive is 0.1 to 1%.
  • At least one embodiment of the present disclosure further provides a method for fabricating a metal pattern, comprising: providing a substrate; forming a metal thin film on the substrate; forming the photolithography described above on the metal thin film And forming a photoresist pattern; using the photoresist pattern as a mask and patterning the metal film with an etching solution to form a metal pattern; wherein the method further comprises: using the light The ion adsorbent in the engraved pattern adsorbs metal ions generated during the patterning of the metal thin film.
  • the material of the metal thin film includes aluminum (Al), copper (Cu), molybdenum (Mo), chromium (Cr), etc., or aluminum-copper alloy (AlCu).
  • Al aluminum
  • Cu copper
  • Mo molybdenum
  • Cr chromium
  • AlCu aluminum-copper alloy
  • CuMo copper-molybdenum alloy
  • MoAl molybdenum-aluminum alloy
  • AlCr aluminum-chromium alloy
  • CuCr copper-chromium alloy
  • MoCr molybdenum-chromium alloy
  • CuMoAl copper-molybdenum aluminum alloy
  • the etching solution includes an aqueous solution of hydrogen peroxide.
  • At least one embodiment of the present disclosure further provides a method for fabricating an array substrate, comprising the method for preparing a metal pattern according to any of the above.
  • the metal pattern includes at least one of a gate, a first source drain electrode, and a second source drain electrode.
  • FIG. 1 is a flow chart of a method for preparing a metal pattern according to an embodiment of the present disclosure.
  • the wet etching process is suitable for etching of metal thin films.
  • the materials of the gate, the source and the drain of the thin film transistor array substrate are mainly Cu metal or Al metal, and the corresponding etching liquid is generally an aqueous hydrogen peroxide solution or other acidic etching liquid.
  • the concentration of metal ions in the etching solution in addition to the concentration of hydrogen peroxide or other acidic materials in the etching solution affecting the etching rate, the concentration of metal ions in the etching solution, for example, Cu 2+ or Al 3+ generated during the etching process The concentration also affects the etch rate.
  • the concentration of metal ions in the etching solution determines the frequency of replacement of the etching solution. Therefore, in terms of product quality and production cost, it is important to maintain the concentration of metal ions in the etching solution within a reasonably stable range.
  • At least one embodiment of the present disclosure provides a photoresist composition
  • a photoresist composition comprising a substrate material and an ion adsorbent, the ion adsorbent being a chelating resin.
  • the chelating resin in the photoresist composition has a selective adsorption effect on metal ions, for example, Cu 2+ and/or Al 3+ generated during etching.
  • metal ions for example, Cu 2+ and/or Al 3+ generated during etching.
  • the chelating resin in the photoresist pattern can be generated during the adsorption process.
  • the metal ions maintain the concentration of metal ions in the etching solution at a stable level to achieve a stable etching rate, thereby improving etching stability and uniformity and improving product quality. In addition, it can extend the life of the etching solution and reduce the production cost.
  • At least one embodiment of the present disclosure provides a photoresist composition
  • a photoresist composition comprising a substrate material and an ion adsorbent, wherein the ion adsorbent is a chelating resin.
  • the chelating resin is a polymer material having a crosslinking function capable of reacting with metal ions to form a multi-coordination complex. Not only the chelating resin as a whole can directly bond with metal ions, but also a part of the functional groups dissociated in the chelating resin can also bond with metal ions.
  • the mechanism by which the chelate resin adsorbs metal ions is that the functional atom on the chelate resin reacts with the metal ion to form a stable structure similar to a small molecule chelate, that is, the chelate resin is a crosslinked polymer as a skeleton, and the chelate resin is used as a skeleton.
  • chelating resin can quickly capture metal ions and easily release trapped metal ions under certain circumstances.
  • the mechanism of adsorption of commonly used ion exchange resins is electrostatic interaction. Therefore, compared with the ion exchange resin, the chelating resin has stronger binding ability to metal ions and higher selectivity.
  • chelating resins that can adsorb metal ions fall into two broad categories: one is a natural polymer chelating resin, and the other is a synthetic polymer chelating resin.
  • the position of the synthetic polymer chelate resin according to the functional group can also be divided into two types: one is that the functional group of the chelate resin is directly attached to the resin skeleton; the other is that the functional group is formed on the side chain, and the side is passed through the side. The chain is attached to the backbone of the chelating resin.
  • the functional group of the chelating resin is mostly an atom having a lone pair of electrons, for example, nitrogen, sulfur, oxygen, phosphorus, etc.
  • a functional group containing an oxygen atom includes: -OH (hydroxyl), -COOR (ester group) , -COOH (carboxyl), -O- (ether bond), -NO (nitroso) and -NO 2 (nitro), etc.
  • functional groups containing a nitrogen atom include: -NH 2 (primary amino group), -NHR (secondary amino group), -NR 2 (tertiary amino group), -CONH 2 (amido group), etc.
  • functional groups containing a sulfur atom include: -SH (fluorenyl), -S-(thioether), etc.
  • Functional groups include: alkylphosphines, dialkylphosphines, trialkylphosphines or arylphosphines.
  • the chelating resin includes an acrylic chelating resin, a glycine based chelating resin, a thiol chelating resin, a polyacrylic fluorenyl chelating resin, and an 8-hydroxy group.
  • an acrylic chelating resin e.g., acrylic chelating resin, a glycine based chelating resin, a thiol chelating resin, a polyacrylic fluorenyl chelating resin, and an 8-hydroxy group.
  • the above-mentioned chelating resin includes -COOH, -SH, -NH 2 and the like to form a complex with a metal ion, thereby adsorbing metal ions in the etching liquid onto the resin body.
  • the metal ions include at least one of Cu 2+ , Ni 2+ , Zn 2+ , Al 3+ , Cr 2+ , Pb 2+ , and Mo 3+ .
  • the chelating resin includes:
  • Poly-4-vinylpyridine chelate resin a combination of any one or more of them.
  • the synthetic steps of the polyacrylic acid ethanediimine oxalic acid chelating resin include:
  • the step of synthesizing the poly(ethyleneimine oxalate) chelating resin comprises: reacting polymethyl acrylate (PMA) with ethylenediamine to synthesize polyacrylamide ethylamine resin (PMA-NH 2 ), then PMA-NH 2
  • PMA-NH 2 polyacrylamide ethylamine diacetic acid chelating resin having a semi-EDTA type is synthesized by reacting with chloroacetic acid under alkaline conditions.
  • poly 4-glycine-methylene styrene examples include:
  • the above step of synthesizing poly-4-glycine-methylene styrene comprises: polychloromethylstyrene catalyzed by strong base and diethyl acetamidomalonate to form diethyl acetylaminomalonate-substituted
  • the styrene polymer was then refluxed with hydrobromic acid for about 48 hours (h) to form the desired product poly 4-glycine-methylene styrene.
  • polyacrylic acid-3-mercaptopropanediol chelating resin examples include:
  • the step of synthesizing the polyacrylic acid-3-mercaptopropyl glycol ester chelating resin comprises: swelling the polyacrylic acid propylene acrylate resin in a NaSH solution for about 12 hours (h), and then heating to 85 ° C for 24 hours (h). After the reaction was over, the product was washed with deionized water.
  • a Schiff base type chelating resin having a structure in which a lone pair of electrons contains N and O atoms, and generally also contains a phenolic hydroxyl group.
  • the 8-hydroxyquinoline chelating resin has a good adsorption effect on divalent and trivalent metal ions, and it easily forms a tetracoordinated chelate with copper ions.
  • the 8-hydroxyquinoline chelating resin is generally obtained by a condensation reaction of a polyphenol having a polyphenolic hydroxyl group and a polybasic primary amine or by a condensation reaction of a polyvalent aldehyde and a polybasic amine containing a phenolic hydroxyl group.
  • the base material includes a film-forming resin, a sensitizer, and an organic solvent
  • the photoresist composition is a positive photoresist composition or a negative photoresist composition.
  • the substrate material also includes an additive.
  • the mass percentage of the film-forming resin is 5 to 30%
  • the mass percentage of the sensitizer is 2 to 5%
  • the mass percentage of the ion adsorbent is 0.1 to 2%
  • the mass of the organic solvent is 62 to 93%
  • the mass percentage of the additive is 0.1 to 1%.
  • the film-forming resin is a host material that imparts film-forming properties to the photoresist composition
  • the sensitizer makes the photoresist composition sensitive to light, such as ultraviolet light
  • the organic solvent is a carrier for the film-forming resin and the sensitizer, The organic solvent only needs to satisfy the uniform dispersion of the film-forming resin and the sensitizer in an organic solvent.
  • the organic solvent includes N-methylpyrrolidone, glycol ether, ethylene glycol alkyl ether acetate, diethylene glycol, propylene glycol monomethyl ether acetate, ethoxyethyl acetate, dimethoxy acetaldehyde A combination of any one or more of propylene glycol methyl ether acetate, ethyl 3-ethoxypropionate, propylene glycol methyl ether (PM) and ethylene glycol ethyl ether.
  • the film-forming resin includes a combination of any one or more of a phenol resin, a silicone resin, or a polyimide.
  • a phenol resin can be prepared by reacting a phenol compound with an aldehyde compound or a ketone compound in the presence of an acidic catalyst.
  • the sensitizer is a diazonaphthoquinone type photosensitizer.
  • a diazonaphthoquinone type photosensitizer can be prepared by reacting a diazonaphthoquinone sulfonyl halide compound with a phenol compound in the presence of a weak base.
  • the diazonaphthoquinone photosensitizer comprises: 2,3,4-trihydroxybenzophenone-1,2-diazonaphthoquinone-5-sulfonate and 2,3,4,4'-four Any one or a combination of two of hydroxybenzophenone-1,2-diazonaphthoquinone-5-sulfonate.
  • the film-forming resins described above each have a polymer chain, and the sensitizer also contains a polymer chain.
  • the sensitizer is similar in structure to the film-forming resin, and their compatibility is good, so that the distribution of the photosensitive groups is more uniform, so that better sensitivity and film forming properties can be obtained.
  • the solubility of the positive photoresist increases after exposure, and the portion of the positive photoresist that is exposed to ultraviolet light is removed.
  • the film-forming resin is a copolymer of an organic ester monomer and an organic acid monomer.
  • the organic ester monomer includes any one of methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, isobutyl methacrylate, and isoamyl acrylate.
  • the organic acid monomer includes any one or more of methacrylic acid, crotonic acid, cinnamic acid, isocinnamic acid, ⁇ -methylcinnamic acid, methyl acrylate, and methyl crotonate. The combination.
  • the sensitizer when the photoresist composition is a negative photoresist composition, includes any one or more of nitroaniline, hydrazine, benzophenone, and N-acetyl-4-nitronaphthylamine. The combination.
  • the solubility of the negative photoresist after exposure is reduced, and the portion of the negative photoresist that is exposed to ultraviolet light is retained.
  • the negative photoresist composition further includes a polymerizable monomer including any one or more of dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, urethane acrylate, and pentoxide tetraol tetraacrylate. Combination of species.
  • the polymerizable monomer undergoes polymerization upon exposure to light to form a polymer.
  • the function of the polymerizable monomer is to form a crosslinked polymer network by photoinitiated free radical polymerization, reducing the solubility of the photo-exposed photoresist composition.
  • the negative photoresist composition further includes a polymerization inhibitor, wherein the polymerization inhibitor comprises hydroquinone, 2-sec-butyl-4,6-dinitrophenol, p-tert-butyl catechol, and 2 a combination of any one or more of 5-di-tert-butyl hydroquinone.
  • the polymerization inhibitor comprises hydroquinone, 2-sec-butyl-4,6-dinitrophenol, p-tert-butyl catechol, and 2 a combination of any one or more of 5-di-tert-butyl hydroquinone.
  • the polymerization inhibitor acts to prevent the unsaturated bonds in the photoresist composition from polymerizing when not exposed to light, thereby increasing the stability of the photoresist composition.
  • the additive may include at least one of a leveling agent, an antifoaming agent, and a stabilizer.
  • the leveling agent includes an acrylic compound, a silicone compound, a fluorocarbon compound, and the like.
  • the leveling agent acts to adjust the viscosity and fluidity of the photoresist system to increase film formation uniformity.
  • an antifoaming agent can reduce the surface tension of the photoresist composition, inhibit foam generation or eliminate the foam that has been produced.
  • Commonly used antifoaming agents include emulsified silicone oil, high carbon alcohol fatty acid ester complex, polyoxyethylene polyoxypropylene pentaerythritol ether, polyoxyethylene polyoxypropylene alcohol ether, polyoxypropylene glyceryl ether and polyoxypropylene polyoxyethylene glycerin. Ether, polydimethylsiloxane, and the like.
  • the stabilizer is at least one of isoamyl alcohol, n-hexanol, glycerol, and n-hexane.
  • the stabilizer can ensure stable chemical properties of the photoresist composition, which can slow down the reaction, maintain chemical balance, reduce the surface tension of the photoresist composition, and prevent light, thermal decomposition or oxidative decomposition.
  • the photoresist composition comprises: a film-forming resin having a mass percentage of 5 to 30%, a sensitizer having a mass percentage of 2 to 5%, and a mass percentage of 0.1 to 2% of an ion adsorbent, an organic solvent having a mass percentage of 62 to 93%, and an additive having a mass percentage of 0.1 to 1%.
  • the above additives may be a leveling agent, an antifoaming agent and/or a stabilizer in a positive photoresist composition, and the like, and may also be a polymerizable monomer in a negative photoresist composition.
  • a polymerization agent, a leveling agent, an antifoaming agent, and/or a stabilizer may be a polymerization agent, and/or a stabilizer.
  • composition of the positive photoresist may exemplarily have the following examples.
  • Phenolic resin with a mass percentage of 5%, 2% by weight of 2,3,4-trihydroxybenzophenone-1,2-diazonaphthoquinone-5-sulfonate, mass percent A polyacrylic acid ethanediamine oxalic acid chelating resin having a content of 2%, a propylene glycol monomethyl ether acetate having a mass percentage of 90%, and an additive having a mass percentage of 1%.
  • the additive having a mass percentage of 1% includes: 0.3% by mass of acrylic acid, 0.3% of polyoxypropylene glyceryl ether, and 0.4% of glycerin.
  • the additive having a mass percentage of 1% includes: 0.2% by mass of acrylic acid, 0.4% of polyoxypropylene glyceryl ether, and 0.4% of glycerin.
  • the additive having a mass percentage of 0.5% includes: 0.1% by mass of acrylic acid, 0.2% of polyoxypropylene glyceryl ether, and 0.2% of glycerin.
  • the additive having a mass percentage of 0.5% includes: 0.1% by mass of acrylic acid, 0.2% of polyoxypropylene glyceryl ether, and 0.2% of glycerin.
  • composition of the negative photoresist may illustratively have the following examples.
  • the acid chelate resin is a propylene glycol monomethyl ether acetate having a mass percentage of 90% and an additive having a mass percentage of 1%.
  • the additive having a mass percentage of 1% includes: 0.1% by mass of acrylic acid, 0.2% of polyoxypropylene glyceryl ether and 0.1% of glycerin, and 0.3% by mass of dipentaerythritol pentaacrylate. And hydroquinone with a mass percentage of 0.3%.
  • the acid chelate resin is a propylene glycol monomethyl ether acetate having a mass percentage of 82% and an additive having a mass percentage of 1%.
  • the additive having a mass percentage of 1% includes: 0.1% by mass of acrylic acid, 0.2% of polyoxypropylene glyceryl ether and 0.1% of glycerin, and 0.3% by mass of dipentaerythritol pentaacrylate. And hydroquinone with a mass percentage of 0.3%.
  • the acid chelate resin is a propylene glycol monomethyl ether acetate having a mass percentage of 73.5% and an additive having a mass percentage of 1%.
  • the additive having a mass percentage of 1% includes: 0.1% by mass of acrylic acid, 0.2% of polyoxypropylene glyceryl ether and 0.1% of glycerin, and 0.3% by mass of dipentaerythritol pentaacrylate. And hydroquinone with a mass percentage of 0.3%.
  • the additive having a mass percentage of 1% includes: 0.1% by mass of acrylic acid, 0.2% of polyoxypropylene glyceryl ether and 0.1% of glycerin, and 0.3% by mass of dipentaerythritol pentaacrylate. And hydroquinone with a mass percentage of 0.3%.
  • At least one embodiment of the present disclosure also provides a method of preparing a photoresist composition comprising mixing a substrate material and an ion adsorbent, wherein the ion adsorbent is a chelating resin.
  • the base material includes a film-forming resin, a sensitizer, an organic solvent, and an additive.
  • the mass percentage of the film-forming resin is 5 to 30%
  • the mass percentage of the sensitizer is 2 to 5%
  • the mass percentage of the ion adsorbent is The content is 0.1 to 2%
  • the mass percentage of the organic solvent is 62 to 93%
  • the mass percentage of the additive is 0.1 to 1%.
  • the specific mass percentages of the film-forming resin, the sensitizer, the ion adsorbent, the organic solvent, and the additive can be referred to the relevant descriptions in the above products, and will not be described herein.
  • FIG. 1 is a flow chart of a method for preparing a metal pattern according to an embodiment of the present disclosure.
  • the preparation method includes the following steps S1 to S4.
  • the base substrate may be a substrate formed of glass or a resin material.
  • the material of the metal film includes aluminum (Al), copper (Cu), molybdenum (Mo), chromium (Cr), etc., or aluminum-copper alloy (AlCu), copper-molybdenum alloy (CuMo), molybdenum aluminum alloy (MoAl).
  • AlCr aluminum chromium alloy
  • CuCr copper chromium alloy
  • MoCr molybdenum chromium alloy
  • CuMoAl copper molybdenum aluminum alloy
  • the photoresist composition may be a positive photoresist or a negative photoresist.
  • the positive photoresist is increased in solubility after exposure, and the negative light is reduced in solubility after exposure. Engraved. That is, the photoresist which is dissolved after being irradiated is a positive photoresist, and the photoresist which remains after being irradiated is a negative photoresist.
  • a mask is required to shield the light to form a photoresist pattern of a desired shape.
  • the etchant employed includes an aqueous solution of hydrogen peroxide.
  • the monitor can be used to monitor changes in the concentration of metal ions in the etching solution in real time.
  • the ion adsorbent in the photoresist pattern can adsorb at least metal ions generated during the etching process (for example, at least Cu 2+ , Al 3+ , Cr 2+ , and Mo 3+ ) .
  • metal ions generated during the etching process for example, at least Cu 2+ , Al 3+ , Cr 2+ , and Mo 3+ .
  • the ion adsorbent in the photoresist pattern can also adsorb the metal ions contained in the etching solution before the etching process.
  • At least one embodiment of the present disclosure also provides a method for preparing an array substrate, including a method for preparing any of the above metal patterns.
  • a method for preparing an array substrate including a method for preparing any of the above metal patterns.
  • the formed metal pattern includes at least one of a gate electrode, a first source drain electrode, and a second source drain electrode.
  • the formed metal pattern may also be other film layer structures as long as the ion adsorbent in the photoresist pattern can be adsorbed to adsorb metal ions generated during the etching process.
  • the photoresist composition provided by at least one embodiment of the present disclosure, a preparation method thereof, a method for preparing a metal pattern, and a method for preparing an array substrate have at least one of the following beneficial effects:
  • the ion adsorbent in the photoresist composition can adsorb metal ions generated during the etching process to maintain the concentration of metal ions in the etching solution. At a stable level;
  • the photoresist composition provided by at least one embodiment of the present disclosure can stabilize the etching rate, improve the stability and uniformity of the etching, and improve the quality of the product;
  • the photoresist composition provided by at least one embodiment of the present disclosure can prolong the service life of the etching solution and reduce the production cost.

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Abstract

一种光刻胶组合物及其制备方法、金属图案的制备方法以及阵列基板的制备方法，光刻胶组合物包括基底材料以及离子吸附剂，其中离子吸附剂为螯合树脂。在(S4)采用光刻胶组合物形成的光刻胶图案作为掩膜板对金属薄膜进行刻蚀的过程中，光刻胶图案中的离子吸附剂可以吸附刻蚀过程中产生的金属离子，从而使刻蚀液中金属离子的浓度维持在稳定的水平，以达到稳定的刻蚀速率，进而提高刻蚀稳定性与均一性，提高产品的质量，此外，还能延长刻蚀液的使用寿命，降低生产成本。

Description

光刻胶组合物、金属图案以及阵列基板的制备方法
本申请要求于2017年8月25日递交的中国专利申请第201710743674.4号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及一种光刻胶组合物及其制备方法、金属图案的制备方法以及阵列基板的制备方法。
背景技术
光刻胶(Photoresist)是指通过紫外光、电子束、粒子束、x射线等的照射或辐照，其溶解度发生变化的耐蚀薄膜材料。光刻胶是完成光刻工艺的关键性材料。根据曝光前后光刻胶溶解度变化的情况，光刻胶可以分为正性光刻胶和负性光刻胶。经曝光而使溶解度增加的是正性光刻胶，经曝光而使溶解度减小的是负性光刻胶。
光刻工艺是阵列基板制造过程中必不可少的一道制程，可以获得期望形状的图案，光刻工艺的实施离不开光刻胶。光刻胶的主体成分是含光敏性基团的聚合物，在紫外光等照射的条件下，光刻胶的受光照的部分的光敏基团发生化学变化，导致光刻胶感光部分和遮光部分在显影液中的溶解性产生差异，从而在显影后可以获得期望形状的图案。
发明内容
本公开至少一实施例提供一种光刻胶组合物，包括基底材料以及离子吸附剂，其中，所述离子吸附剂为螯合树脂。
例如，在本公开至少一实施例提供的光刻胶组合物中，所述螯合树脂包括丙烯酸系螯合树脂、甘氨酸基螯合树脂、巯基螯合树脂、聚丙烯酸系巯基螯合树脂、8-羟基喹啉系螯合树脂、聚乙烯基吡啶螯合树脂和席夫碱类螯合树脂中任意一种或多种的组合。
例如，在本公开至少一实施例提供的光刻胶组合物中，所述螯合树脂包括聚丙烯酸乙二亚胺乙二酸螯合树脂、聚4-甘氨酸-亚甲基苯乙烯螯合树脂、 聚丙烯酸-3-巯基丙二醇酯螯合树脂、聚6-乙烯基-8-羟基喹啉螯合树脂、聚2-羧基-4-乙烯基吡啶螯合树脂和聚4-乙烯基吡啶螯合树脂中任意一种或多种的组合。
例如，在本公开至少一实施例提供的光刻胶组合物中，所述基底材料包括成膜树脂、感光剂和有机溶剂，并且所述光刻胶组合物为正性光刻胶组合物或者负性光刻胶组合物。
例如，本公开至少一实施例提供的光刻胶组合物还包括添加剂，其中，所述成膜树脂的质量百分含量为5～30％，所述感光剂的质量百分含量为2～5％，所述离子吸附剂的质量百分含量为0.1～2％，所述有机溶剂的质量百分含量为62～93％，所述添加剂的质量百分含量为0.1～1％。
例如，在本公开至少一实施例提供的光刻胶组合物中，所述有机溶剂包括N-甲基吡咯烷酮、二醇醚、乙二醇烷基醚乙酸酯、二甘醇、丙二醇单甲醚乙酸酯、乙酸乙氧乙酯、二甲氧基乙醛、丙二醇甲醚醋酸酯、3-乙氧基丙酸乙酯、丙二醇甲醚(PM)和乙酸乙二醇乙醚中任意一种或多种的组合。
例如，在本公开至少一实施例提供的光刻胶组合物中，当所述光刻胶组合物为正性光刻胶组合物时，所述成膜树脂包括酚醛树脂、硅氧烷树脂、或聚酰亚胺中任意一种或多种的组合。
例如，在本公开至少一实施例提供的光刻胶组合物中，所述感光剂为重氮萘醌类光敏剂。
例如，在本公开至少一实施例提供的光刻胶组合物中，所述重氮萘醌类光敏剂包括：2,3,4-三羟基二苯甲酮-1,2-重氮萘醌-5-磺酸酯和2,3,4,4’-四羟基二苯甲酮-1,2-重氮萘醌-5-磺酸酯中任意一种或两种的组合。
例如，在本公开至少一实施例提供的光刻胶组合物中，当所述光刻胶组合物为负性光刻胶组合物时，所述成膜树脂为有机酯类单体和有机酸类单体形成的共聚物。
例如，在本公开至少一实施例提供的光刻胶组合物中，所述有机酯类单体包括甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸丁酯、甲基丙烯酸异丁酯和丙烯酸异戊基酯中任意一种或多种的组合；所述有机酸类单体包括甲基丙烯酸、巴豆酸、肉桂酸、异肉桂酸、α-甲基肉桂酸、丙烯酸甲酯和丁烯酸甲酯中任意一种或多种的组合。
例如，在本公开至少一实施例提供的光刻胶组合物中，所述感光剂包括 硝基苯胺、蒽醌、二苯甲酮和N-乙酰-4-硝基萘胺中任意一种或多种的组合。
例如，在本公开至少一实施例提供的光刻胶组合物中，所述负性光刻胶组合物还包括可聚合单体，所述可聚合单体包括二季戊四醇五丙烯酸酯、二季戊四醇六丙烯酸酯、聚氨酯丙烯酸酯和乙氧化季戊四醇四丙烯酸酯中任意一种或多种的组合。
例如，在本公开至少一实施例提供的光刻胶组合物中，所述负性光刻胶组合物还包括阻聚剂，其中，所述阻聚剂包括对苯二酚、2-仲丁基-4，6-二硝基苯酚、对叔丁基邻苯二酚和2，5-二特丁基对苯二酚中任意一种或多种的组合。
例如，在本公开至少一实施例提供的光刻胶组合物中，所述添加剂包括流平剂、消泡剂和稳定剂中至少之一。
本公开至少一实施例还提供一种光刻胶组合物的制备方法，包括混合基底材料以及离子吸附剂，其中，所述离子吸附剂为螯合树脂。
例如，在本公开至少一实施例提供的制备方法中，所述基底材料包括成膜树脂、感光剂、有机溶剂和添加剂。
例如，在本公开至少一实施例提供的制备方法中，所述成膜树脂的质量百分含量为5～30％，所述感光剂的质量百分含量为2～5％，所述离子吸附剂的质量百分含量为0.1～2％，所述有机溶剂的质量百分含量为62～93％，所述添加剂的质量百分含量为0.1～1％。
本公开至少一实施例还提供一种金属图案的制备方法，包括：提供衬底基板；在所述衬底基板上形成金属薄膜；在所述金属薄膜上形成上述任一项所述的光刻胶组合物，并形成光刻胶图案；以所述光刻胶图案为掩膜并采用刻蚀液对所述金属薄膜进行构图以形成金属图案；其中，所述方法还包括：采用所述光刻胶图案中的离子吸附剂吸附对所述金属薄膜进行构图的过程中产生的金属离子。
例如，在本公开至少一实施例提供的制备方法中，所述金属薄膜的材料包括铝(Al)、铜(Cu)、钼(Mo)、铬(Cr)等，或铝铜合金(AlCu)、铜钼合金(CuMo)、钼铝合金(MoAl)、铝铬合金(AlCr)、铜铬合金(CuCr)、钼铬合金(MoCr)和铜钼铝合金(CuMoAl)中任意一种或多种的组合。
例如，在本公开至少一实施例提供的制备方法中，所述刻蚀液包括双氧水溶液。
本公开至少一实施例还提供一种阵列基板的制备方法，包括上述任一项所述的金属图案的制备方法。
例如，在本公开至少一实施例提供的制备方法中，所述金属图案包括栅极、第一源漏电极和第二源漏电极中至少之一。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为本公开一实施例提供的一种金属图案的制备方法的流程图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。
湿法刻蚀工艺适用于金属薄膜的刻蚀。目前薄膜晶体管阵列基板的栅极、源极和漏极的材料主要采用Cu金属或者Al金属，对应的刻蚀液一般为双氧水溶液或者其他的酸性刻蚀液。在刻蚀的过程中，除了刻蚀液中双氧水或者其他酸性材料的浓度会影响刻蚀速率之外，刻蚀液中金属离子的浓度，例如，蚀刻过程中产生的Cu 2+或者Al 3+的浓度同样会影响刻蚀速率。此外，刻蚀液中金属离子浓度的大小决定着刻蚀液的更换频率。因此，从产品质量和生产成本方面考虑，保持刻蚀液中金属离子的浓度在一个合理稳定的范围之内具有重要的意义。
本公开至少一实施例提供一种光刻胶组合物，该光刻胶组合物包括基底材料以及离子吸附剂，该离子吸附剂为螯合树脂。该光刻胶组合物中的螯合 树脂对金属离子，例如，对刻蚀过程中产生的Cu 2+和/或Al 3+等具有选择性吸附的作用。在湿刻工艺中，采用该光刻胶组合物形成的光刻胶图案作为掩膜板对金属薄膜进行刻蚀的过程中，该光刻胶图案中的螯合树脂可以吸附刻蚀过程中产生的金属离子，从而使刻蚀液中金属离子的浓度维持在稳定的水平，以达到稳定的刻蚀速率，进而提高了刻蚀稳定性与均一性，提高了产品的质量。除此之外，还能延长刻蚀液的使用寿命，降低生产成本。
本公开至少一实施例提供一种光刻胶组合物，该光刻胶组合物包括基底材料以及离子吸附剂，其中，该离子吸附剂为螯合树脂。
螯合树脂是能与金属离子作用，形成多配位络合物的具有交联功能的高分子材料。不仅螯合树脂整体能直接和金属离子成键，而且螯合树脂中解离下来的部分功能基也能与金属离子成键。螯合树脂吸附金属离子的机理是螯合树脂上的功能原子与金属离子发生配位反应，形成类似小分子螯合物的稳定结构，即螯合树脂以交联的聚合物为骨架，利用其含有孤对电子的原子与金属离子空轨道结合形成配位键，从而对金属离子进行吸附。此外，螯合树脂还能快速的捕捉金属离子，在特定的环境下也易释放捕捉的金属离子。常用的离子交换树脂吸附的机理是静电作用。因此，与离子交换树脂相比，螯合树脂与金属离子的结合力更强，选择性也更高。
例如，可以对金属离子进行吸附的螯合树脂分为两大类：一类是天然的高分子螯合树脂，另一类是人工合成的高分子螯合树脂。人工合成的高分子螯合树脂按照功能基的位置也可以分为两类：一类是螯合树脂的功能基直接连在树脂骨架上；另一类是功能基形成在侧链上，通过侧链连在螯合树脂的骨架上。
例如，螯合树脂的功能基大多是具有孤对电子的原子，例如，氮、硫、氧和磷等，例如，含有氧原子的功能基包括：-OH(羟基)、-COOR(酯基)、-COOH(羧基)、-O-(醚键)、-NO(亚硝基)和-NO 2(硝基)等；含有氮原子的功能基包括：-NH 2(伯氨基)、-NHR(仲氨基)、-NR 2(叔氨基)、-CONH 2(酰氨基)等；含有硫原子的功能基包括：-SH(巯基)、-S-(硫醚基)等；含有磷原子的功能基包括：烷基磷、二烷基磷、三烷基磷或者芳基磷。
例如，在本公开至少一实施例提供的光刻胶组合物中，螯合树脂包括丙烯酸系螯合树脂、甘氨酸基螯合树脂、巯基螯合树脂、聚丙烯酸系巯基螯合树脂、8-羟基喹啉系螯合树脂、聚乙烯基吡啶螯合树脂和Schiff碱类螯合树 脂中任意一种或多种的组合。
例如，上述螯合树脂包括的-COOH、-SH、-NH 2等与金属离子形成配合物，从而将刻蚀液中的金属离子吸附到树脂主体上来。例如，金属离子包括Cu 2+、Ni 2+、Zn 2+、Al 3+、Cr 2+、Pb 2+和Mo 3+等中的至少之一。
例如，该螯合树脂包括：
聚丙烯酸乙二亚胺乙二酸螯合树脂
Figure PCTCN2018087881-appb-000001
聚4-甘氨酸-亚甲基苯乙烯螯合树脂
Figure PCTCN2018087881-appb-000002
聚丙烯酸-3-巯基丙二醇酯螯合树脂
Figure PCTCN2018087881-appb-000003
聚6-乙烯基-8-羟基喹啉螯合树脂
Figure PCTCN2018087881-appb-000004
聚2-羧基-4-乙烯基吡啶螯合树脂
Figure PCTCN2018087881-appb-000005
以及
聚4-乙烯基吡啶螯合树脂
Figure PCTCN2018087881-appb-000006
中任意一种或多种的组合。
例如，聚丙烯酸乙二亚胺乙二酸螯合树脂的合成步骤包括：
Figure PCTCN2018087881-appb-000007
例如，上述合成聚丙烯酸乙二亚胺乙二酸螯合树脂的步骤包括：聚丙烯酸甲酯(PMA)与乙二胺反应合成聚丙烯酰胺乙胺树脂(PMA-NH 2)，然后PMA-NH 2在碱性条件下与氯乙酸反应合成具有半EDTA型的聚丙烯酰胺乙胺二乙酸螯合树脂。
例如，聚4-甘氨酸-亚甲基苯乙烯的合成步骤包括：
Figure PCTCN2018087881-appb-000008
例如，上述合成聚4-甘氨酸-亚甲基苯乙烯的步骤包括：聚氯甲基苯乙烯经强碱催化和乙酰氨基丙二酸二乙酯反应形成乙酰氨基丙二酸二乙酯基取代的苯乙烯聚合物，然后经氢溴酸回流约48小时(h)形成目标产物聚4-甘氨酸-亚甲基苯乙烯。
例如，聚丙烯酸-3-巯基丙二醇酯螯合树脂的合成步骤包括：
Figure PCTCN2018087881-appb-000009
例如，上述合成聚丙烯酸-3-巯基丙二醇酯螯合树脂的步骤包括：将聚丙烯酸环氧丙酯树脂在NaSH溶液中溶胀约12小时(h)后，升温到85℃回流24小时(h)，反应结束后，用去离子水洗涤产物。
例如，席夫碱(Schiff base)类螯合树脂的结构中含有孤对电子的原子为N和O，而且一般还含有酚羟基。
例如，8-羟基喹啉螯合树脂对二价和三价金属离子具有很好的吸附作用，其易和铜离子形成四配位的螯合物。该8-羟基喹啉螯合树脂一般由含多酚羟基的多元醛和多元伯胺通过缩合反应合成或者用多元醛和含有酚羟基的多元伯胺缩合反应获得。
例如，基底材料包括成膜树脂、感光剂和有机溶剂，并且光刻胶组合物为正性光刻胶组合物或者负性光刻胶组合物。
例如，基底材料还包括添加剂。在一个示例中，成膜树脂的质量百分含量为5～30％，感光剂的质量百分含量为2～5％，离子吸附剂的质量百分含量为0.1～2％，有机溶剂的质量百分含量为62～93％，添加剂的质量百分含量为 0.1～1％。
例如，成膜树脂是使光刻胶组合物具有成膜性能的主体材料；感光剂使得光刻胶组合物对光，例如紫外光具有敏感性；有机溶剂是成膜树脂和感光剂的载体，有机溶剂只需要满足使成膜树脂和感光剂在有机溶剂中均匀分散即可。
例如，该有机溶剂包括N-甲基吡咯烷酮、二醇醚、乙二醇烷基醚乙酸酯、二甘醇、丙二醇单甲醚乙酸酯、乙酸乙氧乙酯、二甲氧基乙醛、丙二醇甲醚醋酸酯、3-乙氧基丙酸乙酯、丙二醇甲醚(PM)和乙酸乙二醇乙醚中任意一种或多种的组合。
例如，当光刻胶组合物为正性光刻胶组合物时，成膜树脂包括酚醛树脂、硅氧烷树脂、或聚酰亚胺中任意一种或多种的组合。
例如，酚醛树脂可以通过酚化合物与醛化合物或酮化合物在酸性催化剂存在的条件下反应制备而成。
例如，该感光剂为重氮萘醌类光敏剂。
例如，重氮萘醌类光敏剂可以通过重氮萘醌磺酰卤化合物与酚化合物在弱碱存在的条件下反应制备而成。
例如，该重氮萘醌类光敏剂包括：2,3,4-三羟基二苯甲酮-1,2-重氮萘醌-5-磺酸酯和2,3,4,4’-四羟基二苯甲酮-1,2-重氮萘醌-5-磺酸酯中任意一种或两种的组合。
例如，上述成膜树脂均具有高分子链，感光剂中也含有高分子链。感光剂与成膜树脂的结构相似，它们的相容性好，从而使感光基团的分布更加均匀，这样可以得到较好的感光度和成膜性。
例如，经曝光后正性光刻胶的溶解度增加，正性光刻胶被紫外光照的部分是被去除的。
例如，当光刻胶组合物为负性光刻胶组合物时，成膜树脂为有机酯类单体和有机酸类单体形成的共聚物。
例如，该有机酯类单体包括甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸丁酯、甲基丙烯酸异丁酯和丙烯酸异戊基酯中的任意一种或多种的组合；该有机酸类单体包括甲基丙烯酸、巴豆酸、肉桂酸、异肉桂酸、α-甲基肉桂酸、丙烯酸甲酯和丁烯酸甲酯中任意一种或多种的组合。
例如，当光刻胶组合物为负性光刻胶组合物时，感光剂包括硝基苯胺、 蒽醌、二苯甲酮和N-乙酰-4-硝基萘胺中任意一种或多种的组合。
例如，经曝光后负性光刻胶的溶解度降低，负性光刻胶被紫外光照的部分是保留的。
例如，该负性光刻胶组合物还包括可聚合单体，可聚合单体包括二季戊四醇五丙烯酸酯、二季戊四醇六丙烯酸酯、聚氨酯丙烯酸酯和乙氧化季戊四醇四丙烯酸酯中任意一种或多种的组合。
例如，可聚合的单体在经过光照后发生聚合反应以形成聚合物。
例如，可聚合单体的作用为通过光引发自由基聚合形成交联聚合物网络，降低光照部分光刻胶组合物的溶解性。
例如，该负性光刻胶组合物还包括阻聚剂，其中，阻聚剂包括对苯二酚、2-仲丁基-4，6-二硝基苯酚、对叔丁基邻苯二酚和2，5-二特丁基对苯二酚中任意一种或多种的组合。
例如，阻聚剂的作用为阻止光刻胶组合物中的不饱和键在未受光照时发生聚合，提高光刻胶组合物的稳定性。
例如，在本公开至少一实施例提供的正性光刻胶组合物或者负性光刻胶组合物中，添加剂均可以包括流平剂、消泡剂和稳定剂中至少之一。
例如，流平剂包括丙烯酸类化合物、有机硅类化合物和氟碳类化合物等。
例如，流平剂的作用为调节光刻胶体系的粘度及流动性，增加成膜均一性。
例如，消泡剂可以降低光刻胶组合物的表面张力，抑制泡沫产生或消除已产生的泡沫。常用的消泡剂包括乳化硅油、高碳醇脂肪酸酯复合物、聚氧乙烯聚氧丙烯季戊四醇醚、聚氧乙烯聚氧丙醇胺醚、聚氧丙烯甘油醚和聚氧丙烯聚氧乙烯甘油醚、聚二甲基硅氧烷等。
例如，稳定剂为异戊醇、正己醇、丙三醇和正己烷中至少之一。
例如，稳定剂可以保证光刻胶组合物的化学性能稳定，它可以减慢反应,保持化学平衡，降低光刻胶组合物的表面张力，防止光、热分解或氧化分解等作用。
例如，在本公开至少一实施例中，光刻胶组合物包括：质量百分含量为5～30％的成膜树脂，质量百分含量为2～5％的感光剂，质量百分含量为0.1～2％的离子吸附剂，质量百分含量为62～93％的有机溶剂，质量百分含量为0.1～1％的添加剂。
需要说明的是，上述添加剂可以为正性光刻胶组合物中的流平剂、消泡剂和/或稳定剂等；还可以为负性光刻胶组合物中的可聚合单体、阻聚剂、流平剂、消泡剂和/或稳定剂等。
例如，正性光刻胶的组成示例性地可以具有以下示例。
示例一：
质量百分含量为5％的酚醛树脂，质量百分含量为2％的2,3,4-三羟基二苯甲酮-1,2-重氮萘醌-5-磺酸酯，质量百分含量为2％的聚丙烯酸乙二亚胺乙二酸螯合树脂，质量百分含量为90％的丙二醇单甲醚乙酸酯，质量百分含量为1％的添加剂。
质量百分含量为1％的添加剂包括：质量百分含量为0.3％的丙烯酸、0.3％的聚氧丙烯甘油醚和0.4％的丙三醇。
示例二：
质量百分含量为10％的酚醛树脂，质量百分含量为3％的2,3,4-三羟基二苯甲酮-1,2-重氮萘醌-5-磺酸酯，质量百分含量为2％的聚丙烯酸乙二亚胺乙二酸螯合树脂，质量百分含量为84％的丙二醇单甲醚乙酸酯，质量百分含量为1％的添加剂。
质量百分含量为1％的添加剂包括：质量百分含量为0.2％的丙烯酸、0.4％的聚氧丙烯甘油醚和0.4％的丙三醇。
示例三：
质量百分含量为20％的酚醛树脂，质量百分含量为5％的2,3,4-三羟基二苯甲酮-1,2-重氮萘醌-5-磺酸酯，质量百分含量为1.5％的聚丙烯酸乙二亚胺乙二酸螯合树脂，质量百分含量为73％的丙二醇单甲醚乙酸酯，质量百分含量为0.5％的添加剂。
质量百分含量为0.5％的添加剂包括：质量百分含量为0.1％的丙烯酸、0.2％的聚氧丙烯甘油醚和0.2％的丙三醇。
示例四：
质量百分含量为30％的酚醛树脂，质量百分含量为4.5％的2,3,4-三羟基二苯甲酮-1,2-重氮萘醌-5-磺酸酯，质量百分含量为2％的聚丙烯酸乙二亚胺乙二酸螯合树脂，质量百分含量为63％的丙二醇单甲醚乙酸酯，质量百分含量为0.5％的添加剂。
质量百分含量为0.5％的添加剂包括：质量百分含量为0.1％的丙烯酸、 0.2％的聚氧丙烯甘油醚和0.2％的丙三醇。
例如，负性光刻胶的组成示例性地可以具有以下示例。
示例一：
质量百分含量为5％的甲基丙烯酸甲酯和甲基丙烯酸形成的共聚物，质量百分含量为2％的硝基苯胺，质量百分含量为2％的聚丙烯酸乙二亚胺乙二酸螯合树脂，质量百分含量为90％的丙二醇单甲醚乙酸酯，质量百分含量为1％的添加剂。
质量百分含量为1％的添加剂包括：质量百分含量为0.1％的丙烯酸、0.2％的聚氧丙烯甘油醚和0.1％的丙三醇、质量百分含量为0.3％的二季戊四醇五丙烯酸酯和质量百分含量为0.3％的对苯二酚。
示例二
质量百分含量为10％的甲基丙烯酸甲酯和甲基丙烯酸形成的共聚物，质量百分含量为5％的硝基苯胺，质量百分含量为2％的聚丙烯酸乙二亚胺乙二酸螯合树脂，质量百分含量为82％的丙二醇单甲醚乙酸酯，质量百分含量为1％的添加剂。
质量百分含量为1％的添加剂包括：质量百分含量为0.1％的丙烯酸、0.2％的聚氧丙烯甘油醚和0.1％的丙三醇、质量百分含量为0.3％的二季戊四醇五丙烯酸酯和质量百分含量为0.3％的对苯二酚。
示例三
质量百分含量为20％的甲基丙烯酸甲酯和甲基丙烯酸形成的共聚物，质量百分含量为4％的硝基苯胺，质量百分含量为1.5％的聚丙烯酸乙二亚胺乙二酸螯合树脂，质量百分含量为73.5％的丙二醇单甲醚乙酸酯，质量百分含量为1％的添加剂。
质量百分含量为1％的添加剂包括：质量百分含量为0.1％的丙烯酸、0.2％的聚氧丙烯甘油醚和0.1％的丙三醇、质量百分含量为0.3％的二季戊四醇五丙烯酸酯和质量百分含量为0.3％的对苯二酚。
示例四
质量百分含量为30％的甲基丙烯酸甲酯和甲基丙烯酸形成的共聚物，质量百分含量为4％的硝基苯胺，质量百分含量为1％的聚丙烯酸乙二亚胺乙二酸螯合树脂，质量百分含量为64％的丙二醇单甲醚乙酸酯，质量百分含量为1％的添加剂。
质量百分含量为1％的添加剂包括：质量百分含量为0.1％的丙烯酸、0.2％的聚氧丙烯甘油醚和0.1％的丙三醇、质量百分含量为0.3％的二季戊四醇五丙烯酸酯和质量百分含量为0.3％的对苯二酚。
本公开至少一实施例还提供一种光刻胶组合物的制备方法，包括混合基底材料以及离子吸附剂，其中，该离子吸附剂为螯合树脂。
例如，该基底材料包括成膜树脂、感光剂、有机溶剂和添加剂。
例如，在采用上述制备方法制备的光刻胶组合物中，成膜树脂的质量百分含量为5～30％，感光剂的质量百分含量为2～5％，离子吸附剂的质量百分含量为0.1～2％，有机溶剂的质量百分含量为62～93％，添加剂的质量百分含量为0.1～1％。
例如，成膜树脂、感光剂、离子吸附剂、有机溶剂和添加剂的具体的质量百分含量可以参见上述产品中的相关描述，在此不再赘述。
本公开至少一实施例还提供一种金属图案的制备方法，例如，图1为本公开一实施例提供的一种金属图案的制备方法的流程图。该制备方法包括如下的步骤S1～S4。
S1：提供衬底基板；
例如，该衬底基板可以为玻璃或者树脂材料形成的基板。
S2：在衬底基板上形成金属薄膜；
例如，该金属薄膜的材料包括铝(Al)、铜(Cu)、钼(Mo)、铬(Cr)等，或铝铜合金(AlCu)、铜钼合金(CuMo)、钼铝合金(MoAl)、铝铬合金(AlCr)、铜铬合金(CuCr)、钼铬合金(MoCr)和铜钼铝合金(CuMoAl)中任意一种或多种的组合。
S3：在金属薄膜上形成光刻胶组合物，并形成光刻胶图案；
例如，该光刻胶组合物可以为正性光刻胶，也可以为负性光刻胶，经曝光而使溶解度增加的是正性光刻胶，经曝光而使溶解度减小的是负性光刻胶。即经过光照后被溶解掉的光刻胶是正性光刻胶，经光照后保留下来的光刻胶是负性光刻胶。形成光刻胶图案时，需要有掩膜板对光线进行遮挡以形成期望形状的光刻胶图案。
S4：以光刻胶图案为掩膜并采用刻蚀液对金属薄膜进行构图以形成金属图案，光刻胶图案中的离子吸附剂吸附对金属薄膜进行构图的过程中产生的金属离子。
例如，在本公开至少一个实施例中，所采用的刻蚀液包括双氧水溶液。
例如，可以采用监测仪实时地监测刻蚀液中金属离子浓度的变化。
需要说明的是，在刻蚀过程中，光刻胶图案中的离子吸附剂可以吸附刻蚀过程中产生的金属离子(例如Cu 2+、Al 3+、Cr 2+、和Mo 3+中至少之一)，使刻蚀液中金属离子的浓度维持在稳定的水平，达到稳定的刻蚀速率，提高刻蚀稳定性与均一性，提高产品质量，并能延长刻蚀液的使用寿命，降低生产成本。
还需要说明的是，光刻胶图案中的离子吸附剂还可以对进行刻蚀过程之前刻蚀液中本身含有的金属离子进行吸附。
本公开至少一实施例还提供一种阵列基板的制备方法，包括上述任一金属图案的制备方法。具体的实现原理可以参见上述相关描述，在此不再赘述。
例如，形成的金属图案包括栅极、第一源漏电极和第二源漏电极中至少之一。
例如，形成的金属图案还可以是其他膜层结构，只要能够满足光刻胶图案中的离子吸附剂对刻蚀过程中产生的金属离子进行吸附即可。
本公开至少一实施例提供的光刻胶组合物及其制备方法、金属图案的制备方法以及阵列基板的制备方法具有以下至少一项有益效果：
(1)在本公开至少一实施例提供的光刻胶组合物中，光刻胶组合物中的离子吸附剂可以吸附刻蚀过程中产生的金属离子，使刻蚀液中金属离子的浓度维持在稳定的水平；
(2)本公开至少一实施例提供的光刻胶组合物，可以使得刻蚀速率稳定，提高刻蚀的稳定性与均一性，提高产品的质量；
(3)本公开至少一实施例提供的光刻胶组合物，可以延长刻蚀液的使用寿命，降低生产成本。
有以下几点需要说明：
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域的厚度被放大或缩小，即这些附图并非按照实际的比例绘制。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
(3)在不冲突的情况下，本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (23)

  1. 一种光刻胶组合物，包括基底材料以及离子吸附剂，其中，所述离子吸附剂为螯合树脂。
  2. 根据权利要求1所述的光刻胶组合物，其中，所述螯合树脂包括丙烯酸系螯合树脂、甘氨酸基螯合树脂、巯基螯合树脂、聚丙烯酸系巯基螯合树脂、8-羟基喹啉系螯合树脂、聚乙烯基吡啶螯合树脂和席夫碱类螯合树脂中任意一种或多种的组合。
  3. 根据权利要求1所述的光刻胶组合物，其中，所述螯合树脂包括聚丙烯酸乙二亚胺乙二酸螯合树脂、聚4-甘氨酸-亚甲基苯乙烯螯合树脂、聚丙烯酸-3-巯基丙二醇酯螯合树脂、聚6-乙烯基-8-羟基喹啉螯合树脂、聚2-羧基-4-乙烯基吡啶螯合树脂和聚4-乙烯基吡啶螯合树脂中任意一种或多种的组合。
  4. 根据权利要求1～3中任一项所述的光刻胶组合物，其中，所述基底材料包括成膜树脂、感光剂和有机溶剂，并且所述光刻胶组合物为正性光刻胶组合物或者负性光刻胶组合物。
  5. 根据权利要求4所述的光刻胶组合物，还包括添加剂，其中，所述成膜树脂的质量百分含量为5～30％，所述感光剂的质量百分含量为2～5％，所述离子吸附剂的质量百分含量为0.1～2％，所述有机溶剂的质量百分含量为62～93％，所述添加剂的质量百分含量为0.1～1％。
  6. 根据权利要求4或5所述的光刻胶组合物，其中，所述有机溶剂包括N-甲基吡咯烷酮、二醇醚、乙二醇烷基醚乙酸酯、二甘醇、丙二醇单甲醚乙酸酯、乙酸乙氧乙酯、二甲氧基乙醛、丙二醇甲醚醋酸酯、3-乙氧基丙酸乙酯、丙二醇甲醚(PM)和乙酸乙二醇乙醚中任意一种或多种的组合。
  7. 根据权利要求4或5所述的光刻胶组合物，其中，当所述光刻胶组合物为正性光刻胶组合物时，所述成膜树脂包括酚醛树脂、硅氧烷树脂、或聚酰亚胺中任意一种或多种的组合。
  8. 根据权利要求4～7中任一项所述的光刻胶组合物，其中，所述感光剂为重氮萘醌类光敏剂。
  9. 根据权利要求8所述的光刻胶组合物，其中，所述重氮萘醌类光敏剂包括：2,3,4-三羟基二苯甲酮-1,2-重氮萘醌-5-磺酸酯和2,3,4,4’-四羟基二苯 甲酮-1,2-重氮萘醌-5-磺酸酯中任意一种或两种的组合。
  10. 根据权利要求4所述的光刻胶组合物，其中，当所述光刻胶组合物为负性光刻胶组合物时，所述成膜树脂为有机酯类单体和有机酸类单体形成的共聚物。
  11. 根据权利要求10所述的光刻胶组合物，其中，所述有机酯类单体包括甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸丁酯、甲基丙烯酸异丁酯和丙烯酸异戊基酯中的任意一种或多种的组合；所述有机酸类单体包括甲基丙烯酸、巴豆酸、肉桂酸、异肉桂酸、α-甲基肉桂酸、丙烯酸甲酯和丁烯酸甲酯中任意一种或多种的组合。
  12. 根据权利要求10所述的光刻胶组合物，其中，所述感光剂包括硝基苯胺、蒽醌、二苯甲酮和N-乙酰-4-硝基萘胺中任意一种或多种的组合。
  13. 根据权利要求10所述的光刻胶组合物，其中，所述负性光刻胶组合物还包括可聚合单体，所述可聚合单体包括二季戊四醇五丙烯酸酯、二季戊四醇六丙烯酸酯、聚氨酯丙烯酸酯和乙氧化季戊四醇四丙烯酸酯中任意一种或多种的组合。
  14. 根据权利要求10所述的光刻胶组合物，其中，所述负性光刻胶组合物还包括阻聚剂，其中，所述阻聚剂包括对苯二酚、2-仲丁基-4，6-二硝基苯酚、对叔丁基邻苯二酚和2，5-二特丁基对苯二酚中任意一种或多种的组合。
  15. 根据权利要求5～14中任一项所述的光刻胶组合物，其中，所述添加剂包括流平剂、消泡剂和稳定剂中的至少之一。
  16. 一种光刻胶组合物的制备方法，包括混合基底材料以及离子吸附剂，其中，所述离子吸附剂为螯合树脂。
  17. 根据权利要求16所述的制备方法，其中，所述基底材料包括成膜树脂、感光剂、有机溶剂和添加剂。
  18. 根据权利要求17所述的制备方法，其中，所述成膜树脂的质量百分含量为5～30％，所述感光剂的质量百分含量为2～5％，所述离子吸附剂的质量百分含量为0.1～2％，所述有机溶剂的质量百分含量为62～93％，所述添加剂的质量百分含量为0.1～1％。
  19. 一种金属图案的制备方法，包括：
    提供衬底基板；
    在所述衬底基板上形成金属薄膜；
    在所述金属薄膜上形成如权利要求1～15中任一项所述的光刻胶组合物，并形成光刻胶图案；
    以所述光刻胶图案为掩膜并采用刻蚀液对所述金属薄膜进行构图以形成金属图案；其中，
    所述方法还包括：采用所述光刻胶图案中的离子吸附剂吸附对所述金属薄膜进行构图的过程中产生的金属离子。
  20. 根据权利要求19所述的制备方法，其中，所述金属薄膜的材料包括铝(Al)、铜(Cu)、钼(Mo)、铬(Cr)等，或铝铜合金(AlCu)、铜钼合金(CuMo)、钼铝合金(MoAl)、铝铬合金(AlCr)、铜铬合金(CuCr)、钼铬合金(MoCr)和铜钼铝合金(CuMoAl)中任意一种或多种的组合。
  21. 根据权利要求19所述的制备方法，其中，所述刻蚀液包括双氧水溶液。
  22. 一种阵列基板的制备方法，包括权利要求19～21中任一项所述的金属图案的制备方法。
  23. 根据权利要求22所述的制备方法，其中，所述金属图案包括栅极、第一源漏电极和第二源漏电极中至少之一。
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