WO2019037429A1 - 发光二极管及其制作方法 - Google Patents

发光二极管及其制作方法 Download PDF

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Publication number
WO2019037429A1
WO2019037429A1 PCT/CN2018/081676 CN2018081676W WO2019037429A1 WO 2019037429 A1 WO2019037429 A1 WO 2019037429A1 CN 2018081676 W CN2018081676 W CN 2018081676W WO 2019037429 A1 WO2019037429 A1 WO 2019037429A1
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Prior art keywords
light
light emitting
epitaxial structure
layer
emitting diode
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PCT/CN2018/081676
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English (en)
French (fr)
Inventor
李明阳
刘冠洲
毕京锋
李森林
宋明辉
陈文浚
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厦门三安光电有限公司
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Publication of WO2019037429A1 publication Critical patent/WO2019037429A1/zh
Priority to US16/796,375 priority Critical patent/US11876154B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present invention relates to a light emitting diode and a method of fabricating the same, and belongs to the field of light emitting diode chip devices and process technologies.
  • light emitting diodes As a fourth generation light source technology, light emitting diodes have many advantages. It has the characteristics of energy saving, environmental protection, safety, long life and low power consumption. It can be widely used in various fields such as indication, display, decoration, backlight, general lighting, etc. It is widely used. And with the development of the industry, the technological leap and breakthrough, the application of the promotion, the efficiency of LEDs continue to increase, the cost is reduced, greatly improving its development prospects. However, its high-power devices have low efficiency and high initial cost, which is a technical problem that has always existed.
  • the flip-chip device is characterized in that the epitaxial layer is directly in contact with the heat-conducting substrate, which effectively solves the problem of heat dissipation. After the flip-chip is mounted, the growth substrate faces upward to become the light-emitting surface, and the growth substrate is opposite to the emitted light. Transparent, so the problem of light is also solved.
  • the present invention provides a light emitting diode and a method of fabricating the same that directly form a light conversion layer between two LED epitaxial structures, thereby increasing the amount of light emitted by the device or obtaining a light source of a specific wavelength.
  • a light emitting diode includes: a first light emitting epitaxial structure, emitting a first a light of a wavelength having a first region and a second region defined thereon; a light conversion layer formed on the first region of the first light emitting epitaxial structure; a bonding layer located on a surface of the light conversion layer; a second light emitting epitaxial structure, emitting light of a second wavelength, located on a surface of the bonding layer, and connected to the first light emitting epitaxial structure through the bonding layer; and a conductive structure formed on the The second region of the first luminescent epitaxial structure is electrically connected to the second luminescent epitaxial structure; wherein the light emitted by the first luminescent epitaxial structure excites the light converting layer to emit light of a third wavelength, And penetrating the bonding layer upwards.
  • the first luminescent epitaxial structure adopts a flip-chip epitaxial growth mode, wherein the growth substrate is used as a final chip substrate, and the second luminescent epitaxial structure adopts a positive epitaxial growth mode, and the growth substrate thereof can be removed.
  • the lower surface of the first luminescent epitaxial structure has a back mirror structure.
  • the bonding layer is a band pass material layer, that is, a band pass filtering structure, and the light emitted by the first light emitting epitaxial structure can excite the light conversion layer coated thereon to generate longer wavelength light.
  • the band pass filtering structure only light having a wavelength close to that of the second luminescent epitaxial structure is passed.
  • the second luminescent epitaxial structure emits light normally, and the first luminescent epitaxial structure emits light of a shorter wavelength, and the light-converting layer coated thereon is excited to emit light, and the light emitted by the light-converting layer passes through the band-pass bonding layer structure,
  • the portion coincident with the light emitted by the second light emitting diode can pass, and the amount of light obtained is the sum of the light emitted by the epitaxial layer of the second light emitting diode and the light transmitted by the band pass structure layer, thereby adding an additional portion at the same current.
  • the light that coincides with the spectrum of the light emitted by the epitaxial layer of the second light emitting diode greatly enhances the brightness of the light emitting diode.
  • the band gap of the second luminescent epitaxial structure is narrower than the band gap of the first luminescent structure.
  • the light emitted by the first luminescent epitaxial structure excites the wavelength of light emitted by the light conversion layer to be equivalent to the wavelength center value of the light emitted by the second luminescent epitaxial structure.
  • the light-converting light layer has a sufficient thickness to completely absorb the light emitted by the first light-emitting epitaxial structure and radiate light corresponding to the second light-emitting epitaxial structure.
  • the bonding layer structure is composed of a plurality of transparent films, and the wavelength range of transmission can be adjusted from the number of layers and the type of film.
  • the wavelength range of the bonding layer coincides with the wavelength center value of the light emitted by the second luminescent epitaxial structure.
  • the bonding layer is bonded by a transparent compound optical film deposited on the first luminescent epitaxial structure and the second luminescent epitaxial structure.
  • the first luminescent epitaxial structure emits blue light, which excites the light conversion layer to form a green phosphor
  • the second luminescent epitaxial structure emits red light to form three optical bands.
  • Color LEDs The light-emitting area S1 of the first light-emitting epitaxial structure, the projected area S2 of the light-converting layer on the first light-emitting epitaxial structure, and the projected area S3 of the bonding layer on the first light-emitting epitaxial structure The relationship is: S1>S2>S3. By modulating the relationship between the three, a white light emitting diode is formed.
  • the first luminescent epitaxial structure emits blue light, which forms green light after exciting the light conversion layer, the bonding layer only makes green light green, and the second luminescent epitaxial structure emits light Red light, the two mix to form a yellow color.
  • the conductive structure penetrates the bonding layer and the light conversion layer to form an electrode structure between the first light emitting epitaxial structure and the second light emitting epitaxial structure.
  • the conductive structures are semiconductor ohmic contact layers formed on the first and second light emitting epitaxial structures, respectively.
  • the conductive structure is an ohmic contact layer formed of a metal plating formed on the first light emitting epitaxial structure.
  • the size relationship of the three is: S1>S2>S3.
  • the present invention provides a method for fabricating a light emitting diode, comprising the steps of: providing a first light emitting epitaxial structure, the upper surface of which is defined as a first region and a second region; a light conversion layer and a bonding layer are sequentially formed on the first region, and a conductive structure is formed on the second region; a second light emitting epitaxial structure is provided, and the bonding layer is connected, thereby the first light emitting epitaxial structure and the first An illuminating epitaxial structure is connected and electrically connected through the conductive structure; wherein light emitted by the first luminescent epitaxial structure excites the light converting layer to emit light of a third wavelength, and penetrates the bonding The layer is shot upwards.
  • the present invention also provides a method for fabricating a fluorescent enhanced light emitting diode, the forming step of which is: (1) providing a first light emitting epitaxial structure and a second light emitting epitaxial structure; (2) sequentially on the first light emitting epitaxial structure Forming a patterned contact layer, a phosphor coating layer, a band pass bonding layer, and a through electrode structure; (3) sequentially forming a patterned contact layer and a band pass bonding layer on the second luminescent epitaxial layer structure; And performing a para-bonding of the second epitaxial layer structure and the second epitaxial structure; (5) removing the substrate structure of the second epitaxial structure; (6) respectively in the first epitaxial structure and the second epitaxial epitaxial structure Structurally forming a first electrode and a second electrode; (7) forming a back mirror structure on a back surface of the growth substrate of the first light-emitting epitaxial structure.
  • the contact layer epitaxial layer is a heavily miscellaneous structure, and a metal plating layer is deposited to form an ohmic contact through electrode; preferably, the above two ohmic contact layers can pass directly
  • the semiconductor forms an electrode structure.
  • the through electrode structure is formed by depositing a metal
  • the plating layer adopts a symmetrical structure, that is, A/B/C/B/A, which can ensure the adhesion to the utmost extent. Contact with the electrode.
  • the present invention at least includes the following beneficial effects: using a relatively mature phosphor technology without changing the epitaxial structure of a conventional LED, and using a band pass filtering technique, the epitaxial layer of the first light emitting diode can be generated as the second The light of the epitaxial layer of the LED overlaps, so that the amount of light emitted by the LED device is greatly increased under the same current. Rather than simply increasing current or double junction LED epitaxy to improve brightness, this approach enables higher brightness LED chip devices at a lower cost and relatively simple process.
  • FIG. 1 is a schematic structural view of a device of Embodiment 1.
  • FIG. 2 is a schematic structural view of a device after the epitaxial layer of the first light emitting diode completes the band pass bonding layer in the first embodiment.
  • FIG. 3 is a schematic view showing the structure of the device after the epitaxial layer of the first light emitting diode completes the through electrode structure in the first embodiment
  • FIG. 4 is a schematic structural view of a device after the epitaxial layer of the second light emitting diode completes the band pass bonding layer in the first embodiment.
  • FIG 5 is a schematic structural view of the device after the first and second light emitting diode epitaxial layers are bonded and the GaAs substrate is removed in the first embodiment.
  • FIG. 6 is a schematic structural view of the device after the epitaxial layer is etched to form a step in the first embodiment.
  • FIG. 7 is a schematic structural view of a device after forming a first electrode and a second electrode in the first embodiment.
  • FIG 8 is a schematic structural view of a device of the second embodiment.
  • FIG. 9 and FIG. 10 are schematic diagrams showing the structure of a device of the third embodiment.
  • the first light-emitting epitaxial structure is a GaN-based LED
  • the growth substrate is A1 2 0 3
  • the second light-emitting epitaxial structure is a GalnP-based LED
  • the growth substrate is GaAs
  • a fluorescent enhanced light having a light-emitting band of GalnP is fabricated. diode.
  • a fluorescent enhanced light emitting diode mainly includes: a back mirror structure 014, a sapphire substrate 001, an n-type GaN-based epitaxial layer 002, an 003 active layer, and a p-type GaN-based epitaxial layer 005.
  • the second light-emitting epitaxial structure 010 is a flip-chip structure, and includes a p-type semiconductor layer, an active layer and an n-type semiconductor layer in order from bottom to top, and the conductive structure penetrates through the light conversion layer 006 and the bonding layers 007 and 008, thereby The first luminescent epitaxial structure and the second luminescent epitaxial structure form an electrical connection.
  • the bonding layer is a band pass bonding layer (ie, a filter structure), and only the light having a wavelength close to that of the second luminescent epitaxial structure is passed through, in the working ⁇ , the second illuminating epitaxial structure Normally emitting light, the first luminescent epitaxial structure emits light of a shorter wavelength, and the light-converting layer 006 coated thereon is excited to emit light. After the light emitted by the light-converting layer 006 passes through the band-pass bonding layer, only the second luminescent epitaxial structure is emitted. The light-coincident portion can pass, and the amount of light obtained is the sum of the light emitted by the epitaxial layer of the second light-emitting diode and the light transmitted by the band-pass structure layer.
  • a band pass bonding layer ie, a filter structure
  • the sheet mainly includes a growth substrate 001, an n-type GaN semiconductor layer 002, a light-emitting layer 003, and a p-type GaN semiconductor layer 005, and the second LED epitaxial wafer is an AlGalnP-based epitaxial wafer, which mainly includes a p-type ohmic contact layer 009. , a light-emitting epitaxial stack 010 and an n-type ohmic contact layer 011.
  • a light conversion layer 006 and a first bonding layer 00 7 are formed.
  • a light-emitting region and a conductive region are defined on the surface of the p-type GaN semiconductor layer 005 of the first LED epitaxial wafer.
  • the prepared phosphor is coated on the light-emitting area of the first LED epitaxial wafer as the light conversion layer 006, and the phosphor coating thickness is 10-50 ⁇ m, so as to transmit all the light emitted by the first LED structure as much as possible.
  • the phosphor is a red phosphor; then performing Si0 2 and A1 2 0 3 multilayer film deposition to form a band pass bonding layer 007
  • the phosphor coating layer 006 and the band pass bonding oxide layer 007 of the conductive region are etched away to expose the ohmic contact layer 004, and the metal structure 012 is formed on the ohmic contact layer 004 to form a through phosphor coating.
  • the metal structure 012 forms an ohmic contact with the contact layers of the first and second LED epitaxial layers in a symmetrical configuration, i.e., A/B/C/B/A.
  • the thickness of the metal structure is adjustable. According to the schematic diagram, the final thickness is flush with the oxide step, as shown in FIG.
  • the growth substrate of the D epitaxial wafer forms a device structure as shown in FIG.
  • a mesa structure is etched on the obtained device by using a photolithography mask, and the upper surface of the mesa structure is an n-type GaN semiconductor layer 002 on the side of the first epitaxial growth substrate, as shown in FIG. 6.
  • a patterned ohmic contact layer 011 is formed on the side of the epitaxial layer of the second light emitting diode.
  • an N electrode and a P electrode are respectively formed on the surface of the n-type GaN semiconductor layer 002 of the first light emitting diode epitaxial layer and the ohmic contact layer 011 of the second light emitting diode epitaxial layer, as shown in FIG. [0076]
  • the first light-emitting diode epitaxial layer substrate side that is, the sapphire side, is deposited with 810 2 and 1 2 0 3 mirror structures 013, that is, a fluorescent-enhanced light-emitting diode device structure as shown in FIG. 1 is formed.
  • the difference between this embodiment and the first embodiment is that the metal structure of the epitaxial layer of the first LED is saved, and the ohmic contact layer of the epitaxial layers of the first and second LEDs is directly used.
  • the heterostructure can form an electrode channel that is turned on and off directly through the semiconductor, which further simplifies the process and makes the cost lower.
  • the first light emitting diode epitaxial layer is a GaN-based material
  • the growth substrate is A1 2 0 3
  • the second light emitting diode epitaxial layer is a GalnP-based material
  • the growth substrate is GaAs
  • the light-emitting band is made into three colors. Light-emitting diodes.
  • FIG. 9 is a side cross-sectional view showing the structure of the device
  • FIG. 10 is a plan view showing the structure of the device.
  • the light conversion layer 006 is formed only on a part of the light-emitting surface of the first LED structure
  • the same bonding layer 007 and 008 are formed only on the surface of the light conversion layer, that is, the light-emitting area S of the first LED structure. 1.
  • the relationship between the projected area S2 of the light conversion layer 007 on the first LED structure and the projected area S3 of the bonding layer 007 on the first LED structure is: S1>S2>S3.
  • the first LED structure emits blue light
  • the light conversion layer 006 is a green phosphor
  • the second LE D structure emits red light. Since the light conversion layer 006 only partially covers the light emitting surface of the first LED structure, the bonding layers 0 07 and 008 partially cover the upper surface of the light conversion layer 006, that is, the second LED structure is formed only on a part of the surface of the partial light conversion layer 007.
  • the green phosphor is excited to emit green light upward, and the other part is directly emitted from the surface of the first LED structure; a part of the green light emitted by the light conversion layer 006 is directly emitted.
  • the second LED structure emits red light, and the three are mixed to form white light.
  • the first light-emitting epitaxial structure is a GaN-based LED
  • the growth substrate is A1 2 0 3
  • the blue light is emitted
  • the second light-emitting epitaxial structure is a GalnP-based LED
  • the growth substrate is GaAs
  • red light is emitted to produce light.
  • the structure of the light emitting diode device is as shown in Fig. 1, which will be described in detail below.
  • the difference between this embodiment and the first embodiment is that the light conversion layer 006 is replaced by a green phosphor, thereby converting the light of the first light emitting diode into green light, and the band pass bonding layers 007 and 008 can only pass through the green. Light; By controlling the size of the bandpass bonding layer, the intensity of the green light can be controlled to control the intensity of the yellow light emitted by the combination of green and red light.

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Abstract

发光二极管及其制作方法。该发光二极管依次包括第一发光二极管外延层（002，003，005）、光转换层（006）、键合层（007，008）和第二发光二极管外延结构（010）。键合层（007，008）为带通键合层，光转换层（006）能被第一发光二极管外延层发出的光激发，通过带通键合层后，出射的光与第二发光二极管外延层发出的光光谱重合，从而在相同电流下，额外增加了一部分与第二发光二极管外延层发出的光光谱重合的光线，增强了发光二极管的亮度。

Description

发明名称：发光二极管及其制作方法
技术领域
[0001] 本发明涉及一种发光二极管及其制作方法， 属于发光二极管芯片器件与工艺技 术领域。
背景技术
[0002] 发光二极管作为第四代光源技术， 具有诸多优点。 具有节能、 环保、 安全、 寿 命长、 低功耗等特点， 可以广泛应用于各种指示、 显示、 装饰、 背光源、 普通 照明等领域场合， 使用非常广泛。 并且随着行业的发展， 技术的飞跃突破， 应 用的大力推广， 发光二极管的效率不断提高， 成本降低， 大大提高了其发展前 景。 但是， 其大功率器件效率低、 起始成本高等， 是一直存在的技术难题。
[0003] 近年来， 为了提高发光二极管的出光效率， 在发光二极管外延生长中已经有双 结甚至是多结发光二极管出现， 双结发光二极管外延具有两组量子阱结构， 中 间采用隧道结连接， 同样电流下， 出光量得到很大提高。 在芯片方面出现倒装 器件， 其特点是外延层直接与导热基板接触， 有效解决了散热的问题， 同吋倒 装后生长衬底朝上成为出光面， 并且生长衬底相对于出射的光是透明的， 因此 出光问题也得到解决。
[0004] 可见提高发光二极管的出光效率对于发光二极管来说， 是一个持久的课题。 无 论是从器件结构、 外延设计、 封装形式等途径， 其目的都是在相同条件下增加 其出光量， 提升出光效率。
技术问题
问题的解决方案
技术解决方案
[0005] 本发明提供了一种发光二极管及其制作方法， 其直接在两个 LED外延结构之间 形成光转换层， 从而增加器件出光量或者获得特定波长的光源。
[0006] 根据本发明的第一个方面， 发光二极管， 包括： 第一发光外延结构， 发射第一 波长的光， 其上表面定义有第一区域和第二区域； 光转换层， 形成于所述第一 发光外延结构的第一区域； 键合层， 位于所述光转换层的表面之上； 第二发光 外延结构， 发射第二波长的光， 位于所述键合层的表面之上， 并通过所述键合 层与所述第一发光外延结构连接； 导电结构， 形成于所述形成于所述第一发光 外延结构的第二区域， 并电性连接至所述第二发光外延结构； 其中， 所述第一 发光外延结构发出的光激发所述光转换层发出第三波长的光， 并穿透所述键合 层向上射出。
[0007] 优选地， 所述第一发光外延结构采用倒装磊晶生长方式， 其生长衬底作为最终 芯片衬底， 第二发光外延结构采用正装磊晶生长方式， 其生长衬底可以去除。
[0008] 优选在， 所述第一发光外延结构的下表面具有背反射镜结构。
[0009] 在一些实施例中， 所述键合层为带通材料层， 即带通滤波结构， 第一发光外延 结构发出的光能够激发涂覆其上的光转换层， 产生更加长波的光， 通过带通滤 波结构， 只让与第二发光外延结构的发光波长相近的光通过。 工作吋， 第二发 光外延结构正常发光， 第一发光外延结构发出较短波长的光， 激发涂覆其上的 光转换层发光， 光转换层发射的光经过带通键合层结构后， 只有与第二发光二 极管发射的光重合的部分才能通过， 获得的出光量为第二发光二极管外延层发 出的光和带通结构层透过的光的总和， 从而在相同电流下， 额外增加了一部分 与第二发光二极管外延层发出的光光谱重合的光线， 使发光二极管的亮度得到 极大增强。
[0010] 优选地， 第二发光外延结构的带隙比第一发光结构的带隙窄。
[0011] 优选地， 第一发光外延结构发出的光激发所述光转换层发射出的光波长同第二 发光外延结构发射出的光波长中心值相当。
[0012] 优选地， 所述光转换光层具有足够的厚度， 将第一发光外延结构发射出的光完 全吸收， 并辐射出对应第二发光外延结构的光。
[0013] 优选地， 所述键合层结构由多层透光薄膜组成， 其透过的波长范围可从过薄膜 层数与薄膜种类控制调节。
[0014] 优选地， 通过所述键合层的波长范围同第二发光外延结构发射的光波长中心值 重合。 [0015] 优选地， 所述键合层由沉积于第一发光外延结构和第二发光外延结构之上的透 明化合物光学薄膜键合而成。
[0016] 在一些实施例中， 所述第一发光外延结构发射蓝光， 其激发所述光转换层为形 成绿光荧光粉， 所述第二发光外延结构发射红光， 形成光波段为三种颜色的发 光二极管。 其中所述第一发光外延结构的出光面积 Sl、 所述光转换层在第一发 光外延结构上的投影面积 S2、 所述键合层在第一发光外延结构上的投影面积 S3 三者的大小关系为： S1〉S2〉S3。 通过调制三者的关系， 从而形成白光发光二 极管。
[0017] 在一些实施例中， 所述第一发光外延结构发射蓝光， 其激发光转换层后形成绿 光， 所述键合层仅让绿光绿光， 所述第二发光外延结构发射经红光， 两者混合 形成黄色。
[0018] 优选地， 所述导电结构穿透所述键合层和光转换层， 形成第一发光外延结构和 第二发光外延结构之间的电极结构。
[0019] 在一些实施例中， 所述导电结构为分别形成于所述第一发光外延结构和第二发 光外延结构上的半导体欧姆接触层。
[0020] 在一些实施例中， 所述导电结构为形成于所述第一发光外延结构上的金属镀层 形成的欧姆接触层。
[0021] 在一些实施例中， 所述第一发光外延结构的出光面积 Sl、 所述光转换层在第一 发光外延结构上的投影面积 S2、 所述键合层在第一发光外延结构上的投影面积 S
3三者的大小关系为： S1=S2=S3。
[0022] 在一些实施例中， 所述第一发光外延结构的出光面积 Sl、 所述光转换层在第一 发光外延结构上的投影面积 S2、 所述键合层在第一发光外延结构上的投影面积 S
3三者的大小关系为： S1=S2〉S3。
[0023] 在一些实施例中， 所述第一发光外延结构的出光面积 Sl、 所述光转换层在第一 发光外延结构上的投影面积 S2、 所述键合层在第一发光外延结构上的投影面积 S
3三者的大小关系为： S1〉S2〉S3。
[0024] 本发明同吋提供了一种发光二极管的制作方法， 包含如下步骤： 提供第一发光 外延结构， 其上表面定义为第一区域和第二区域； 在所述第一发光外延结构的 第一区域上依次形成光转换层和键合层， 在第二区域上形成导电结构； 提供第 二发光外延结构， 将其所述键合层连接， 从而将所述第一发光外延结构和第一 发光外延结构连接起来， 并通过所述导电结构形成电性连接； 其中， 所述第一 发光外延结构发出的光激发所述光转换层发出第三波长的光， 并穿透所述键合 层向上射出。
[0025] 本发明还提供了一种荧光增强发光二极管的制作方法， 其形成步骤为： （1) 提供第一发光外延结构和第二发光外延结构； （2) 在第一发光外延结构上依次 形成图形化的接触层、 荧光粉涂覆层、 带通键合层和贯穿电极结构； （3) 在第 二发光外延层结构上依次形成图形化的接触层和带通键合层； （4) 将第二发外 延层结构和第二发光外延结构进行对位键合； （5) 去除第二发光外延结构的衬 底结构； （6) 分别在在第一发光外延结构和第二发光外延结构上上形成第一电 极、 第二电极； （7) 在第一发光外延结构的生长衬底背面形成背反射镜结构。
[0026] 所述步骤 （2) (3) 中， 所述接触层外延层为重惨杂结构， 通过沉积金属镀层 ， 形成欧姆接触的贯穿电极； 优选地， 以上两种欧姆接触层能够直接通过半导 体形成电极结构。
[0027] 所述步骤 （2) 中， 若采用沉积金属的方法形成贯穿电极结构， 优选地， 镀层 采用对称结构， 即 A/B/C/B/A的方式， 可最大程度保证粘附性与电极接触。 有益 效果
[0028] 本发明至少包括以下有益效果： 在不改变常规 LED外延结构的情况下， 采用相 对较为成熟的荧光粉技术， 并通过带通滤波技术， 使第一发光二极管外延层能 够产生同第二发光二极管外延层重合的光， 从而实现在同样的通电电流情况下 ， LED器件的出光量大大增加。 不同于单纯增加电流或者双结 LED外延来提高亮 度， 该种方法能够以较为低廉的成本、 相对简单的工艺， 获得较高亮度的 LED芯 片器件。
[0029] 本发明的其它特征和优点将在随后的说明书中阐述， 并且， 部分地从说明书中 变得显而易见， 或者通过实施本发明而了解。 本发明的目的和其他优点可通过 在说明书、 权利要求书以及附图中所特别指出的结构来实现和获得。
发明的有益效果 对附图的简要说明
附图说明
[0030] 附图用来提供对本发明的进一步理解， 并且构成说明书的一部分， 与本发明的 实施例一起用于解释本发明， 并不构成对本发明的限制。 此外， 附图数据是描 述概要， 不是按比例绘制。
[0031 ] 图 1为实施例一器件结构示意图。
[0032] 图 2为实施例一中第一发光二极管外延层完成带通键合层后器件结构示意图。
[0033] 图 3为实施例一中第一发光二极管外延层完成贯穿电极结构后器件结构示意图
[0034] 图 4为实施例一中第二发光二极管外延层完成带通键合层后器件结构示意图。
[0035] 图 5为实施例一中第一、 二发光二极管外延层完成键合及去除 GaAs衬底后器件 结构示意图。
[0036] 图 6为实施例一中外延层蚀刻形成台阶后器件结构示意图。
[0037] 图 7为实施例一中形成第一电极和第二电极后器件结构示意图。
[0038] 图 8为实施例二器件结构示意图。
[0039] 图 9和图 10为实施例三之器件结构示意图。
[0040] 图中：
[0041] 001蓝宝石衬底结构
[0042] 002 11型 GaN基外延层
[0043] 003发光层
[0044] 004图形化的欧姆接触层
[0045] 005p型 GaN基外延层
[0046] 006光转换层
[0047] 007 SiO 2/Α1 20 3带通键合层结构 1
[0048] 008S1O 2/Al 20 3带通键合层结构 2
[0049] 009欧姆接触外延层结构
[0050] OlOGalnP发光外延结构
[0051] 011欧姆接触结构 [0052] 012金属结构
[0053] 013 N电极和 P电极结构
[0054] 014背反射镜结构
[0055] 015GaAs生长衬底。
[0056] 下面结合实施例对本发明作进一步描述， 但不应以此限制本发明的保护范围。
[0057] 实施例一
[0058] 本实例以第一发光外延结构为 GaN基 LED, 生长衬底为 A1 20 3， 第二发光外延 结构为 GalnP基 LED, 生长衬底为 GaAs， 制作发光波段为 GalnP的荧光增强发光 二极管。
[0059] 请参看图 1， 一种荧光增强发光二极管， 主要包括： 背反射镜结构 014、 蓝宝石 衬底 001、 n型 GaN基外延层 002、 003有源层、 p型 GaN基外延层 005、 光转换层 00 6、 键合层 007和 008和第一发光外延结构 010、 由第一图形化的欧姆接触层 004、 金属结构 012和第二图形化欧姆接触层 009构成的导电结构。 其中第二发光外延 结构 010， 为倒装结构， 从下至上一般依次包含 p型半导体层、 有源层和 n型半导 体层， 导电结构贯穿光转换层 006、 键合层 007和 008， 从而使第一发光外延结构 和第二发光外延结构形成电性连接。
[0060] 在本实施例中， 键合层为带通键合层 （即带滤波结构） ， 只让与第二发光外延 结构的发光波长相近的光通过， 在于工作吋， 第二发光外延结构正常发光， 第 一发光外延结构发出较短波长的光， 激发涂覆其上的光转换层 006发光， 光转换 层 006发射的光经过带通键合层后， 只有与第二发光外延结构发射的光重合的部 分才能通过， 获得的出光量为第二发光二极管外延层发出的光和带通结构层透 过的光的总和。
[0061] 下面结合制作方法对上述发光二极管的结构进行详细说明。
[0062] (一） 提供 LED外延片。
[0063] 提供第一 LED外延片和第二 LED外延片， 两个 LED外延片除生长衬底外， 分别 在发光层上下具有典型的外延功能层结构， 其中第一 LED外延片为 GaN基外延片 ， 依次主要包括生长衬底 001、 n型 GaN半导体层 002、 发光层 003和 p型 GaN半导 体层 005， 第二 LED外延片为 AlGalnP系外延片， 其主要包括 p型欧姆接触层 009 、 发光外延叠层 010和 n型欧姆接触层 011。
[0064] (二） 制作光转换层 006和第一键合层 007。
[0065] 首先， 在第一 LED外延片的 p型 GaN半导体层 005的表面上定义发光区和导电区
， 并在导电区形成欧姆接触层 004。
[0066] 接着， 在第一 LED外延片的发光区上涂覆配制好的荧光粉作为光转换层 006， 荧光粉涂覆厚度在 10-50μηι， 以尽可能将第一 LED结构发出的光全部吸收， 该荧 光粉为红光荧光粉； 然后进行 Si0 2和 A1 20 3多层薄膜沉积， 形成带通键合层 007
。 如图 2所示。
[0067] 然后， 蚀刻掉导电区域的荧光粉涂覆层 006和带通键合氧化物层 007裸露出欧姆 接触层 004， 在欧姆接触层 004上制作金属结构 012， 从而形成贯穿荧光粉涂覆层 006和带通键合氧化物层 007的导电结构。 优选地， 金属结构 012采用对称结构， 即 A/B/C/B/A的方式， 与第一和第二 LED外延层的接触层形成欧姆接触。 该金属 结构的厚度可调， 根据示意图中， 最终厚度与氧化物台阶齐平即可， 如图 3所示
[0068] (三） 制作第二键合层 008。
[0069] 采用光刻掩膜图形化第二 LED外延片的 p型欧姆接触层 009， 去除大面积接触层 ， 只保留所需图案作为接触层； 接着， 在第二 LED外延片的表面上沉积 Si0 2 和 A120 3多层薄膜， 形成带通键合层 008; 然后进行光刻掩膜， 腐蚀掉欧姆接触 区域的氧化物层， 裸露出图形化的 p型欧姆接触层 009， 如图 4所示。
[0070] (四） 接合第一 LED外延层和第二 LED外延层。
[0071] 将以上得到的第一 LED外延片和第二 LED外延片进行对位键合， 并去除第二 LE
D外延片的生长衬底， 形成如图 5所示的器件结构。
[0072] (五） 制作电极， 形成荧光增强型 LED器件。
[0073] 首先， 采用光刻掩膜， 在所得器件上蚀刻出台面结构， 该台面结构上表面为第 一发光外延层生长衬底一侧的 n型 GaN半导体层 002， 如图 6所示。
[0074] 接着， 在第二发光二极管外延层一侧形成图案化的欧姆接触层 011。
[0075] 然后， 在第一发光二极管外延层的 n型 GaN半导体层 002表面上和第二发光二极 管外延层的欧姆接触层 011上分别形成 N电极、 P电极， 如图 7所示。 [0076] 最后， 第一发光二极管外延层衬底一侧， 也即蓝宝石一侧沉积810 2和 1 20 3反 射镜结构 013， 即形成如图 1所示荧光增强发光二极管器件结构。
[0077] 实施例二
[0078] 请参看附图 8， 本实施例与实施例一的区别在于， 将第一发光二极管外延层采 用的金属结构节省， 直接将第一、 二发光二极管外延层的欧姆接触层采用重惨 杂结构， 从而能够直接通过半导体形成上下导通的电极通道， 进一步简化了工 艺流程， 并使成本更加低廉。
[0079] 实施例三
[0080] 本实例以第一发光二极管外延层为 GaN基材料， 生长衬底为 A1 20 3， 第二发光 二极管外延层为 GalnP系材料， 生长衬底为 GaAs， 制作发光波段为三种颜色的发 光二极管。
[0081] 请参看图 9和图 10， 其中图 9为器件结构的侧面剖视图， 图 10为器件结构的俯视 图。 在本实施例中， 光转换层 006仅形成于第一 LED结构的部分出光面上， 同吋 键合层 007和 008仅形成于光转换层的表面上， 即第一 LED结构的出光面积 S 1、 光转换层 007在第一 LED结构上的投影面积 S2、 键合层 007在第一 LED结构上的投 影面积 S3三者的大小关系为： S1〉S2〉S3。
[0082] 在本实施例中， 第一 LED结构发射蓝光， 光转换层 006为绿光荧光粉， 第二 LE D结构发射红光。 由于光转换层 006只部分覆盖第一 LED结构的出光面， 键合层 0 07和 008部分覆盖光转换层 006的上表面， 即第二 LED结构只形成在部分光转换层 007的部分表面上， 因此第一 LED结构发射的蓝光一部分经过光转换层 006， 激发 绿光荧光粉向上发出绿光， 另一部分直接从第一 LED结构的表面射出； 光转换层 006发出的绿光一部分直接射出， 第二 LED结构发射红光， 三者混合形成白光。
[0083] 实施例四
[0084] 本实例以第一发光外延结构为 GaN基 LED, 生长衬底为 A1 20 3， 发射蓝光， 第 二发光外延结构为 GalnP基 LED, 生长衬底为 GaAs， 发射红光， 制作发光波段为 黄色的发光二极管。 发光二极管器件结构如图 1所示， 下面进行详细说明。
[0085] 本实施例与实施例一的区别在于， 光转换层 006采用绿光荧光粉代替， 从而将 第一发光二极管的光转换为绿光， 带通键合层 007和 008只能通过绿光； 同吋， 通过调控带通键合层面积的大小， 可以控制绿光的强度， 从而控制绿光和红光 复合发出的黄光的强度。
[0086] 目前常见的黄光发光二极管多为 AlGalnP四元外延制作而成， 该种方法由于材 料组分较难控制， 发光波长差异较大， 从而会导致较大色差产生。 采用此种方 法， 可以直接从绿光的通光量来控制红绿的比例， 从而形成特定稳定的黄光。
[0087] 以上所述仅为本发明创造的较佳实施例而已， 并不用以限制本发明创造， 凡在 本发明创造的精神和原则之内， 所作的任何修改、 等同替换、 改进等， 均应包 含在本发明创造的保护范围之内。

Claims

权利要求书
[权利要求 1] 发光二极管， 包括：
第一发光外延结构， 发射第一波长的光， 其上表面定义有第一区域和 第二区域；
光转换层， 形成于所述第一发光外延结构的第一区域；
键合层， 位于所述光转换层的表面之上；
第二发光外延结构， 发射第二波长的光， 位于所述键合层的表面之上
， 并通过所述键合层与所述第一发光外延结构连接；
导电结构， 形成于所述形成于所述第一发光外延结构的第二区域， 并 电连接至所述第二发光外延结构；
其中， 所述第一发光外延结构发出的光激发所述光转换层发出第三波 长的光， 并穿透所述键合层向上射出。
[权利要求 2] 根据权利要求 1所述的发光二极管， 其特征在于： 第二发光外延结构 的带隙比第一发光结构的带隙窄。
[权利要求 3] 根据权利要求 1所述的发光二极管， 其特征在于： 第一发光外延结构 发出的光激发所述光转换层发射出的光波长同第二发光外延结构发射 出的光波长中心值相当。
[权利要求 4] 根据权利要求 1所述的发光二极管， 其特征在于： 所述光转换光层具 有足够的厚度， 将第一发光外延结构发射出的光完全吸收， 并辐射出 对应第二发光外延结构的光。
[权利要求 5] 根据权利要求 3或 4所述的发光二极管， 其特征在于： 所述键合层仅让 与所述第二发光外延结构的发光波长相近的光通过。
[权利要求 6] 根据权利要求 1所述的发光二极管， 其特征在于： 所述键合层为带通 材料层。
[权利要求 7] 根据权利要求 6所述的发光二极管， 其特征在于： 所述键合层结构由 多层透光薄膜组成， 调节所述薄膜层数与薄膜种类从而控制其透过的 波长范围。
[权利要求 8] 根据权利要求 7所述的发光二极管， 其特征在于： 通过所述键合层的 波长范围同第二发光外延结构发射的光波长中心值重合。
[权利要求 9] 根据权利要求 1所述的发光二极管， 其特征在于： 所述键合层由沉积 于第一发光外延结构和第二发光外延结构之上的透明化合物光学薄膜 键合形成。
[权利要求 10] 根据权利要求 1所述的发光二极管， 其特征在于： 所述导电结构穿透 所述键合层和光转换层， 形成第一发光外延结构和第二发光外延结构 之间的电极结构。
[权利要求 11] 根据权利要求 1所述的发光二极管， 其特征在于： 所述导电结构为分 别形成于所述第一发光外延结构和第二发光外延结构上的半导体欧姆 接触层。
[权利要求 12] 根据权利要求 1所述的发光二极管， 其特征在于： 所述第一发光外延 结构发射蓝光， 其激发光转换层后形成绿光， 所述键合层仅让绿光通 过， 所述第二发光外延结构发射红光， 两者混合形成黄色。
[权利要求 13] 根据权利要求 1所述的发光二极管， 其特征在于： 所述第一发光外延 结构发射蓝光， 所述光转换层为绿光荧光粉， 所述第二发光外延结构 发射红光， 三者混合形成白光。
[权利要求 14] 发光二极管的制作方法， 包含如下步骤：
提供第一发光外延结构， 其上表面定义为第一区域和第二区域； 在所述第一发光外延结构的第一区域上依次形成光转换层和键合层， 在第二区域上形成导电结构；
提供第二发光外延结构， 形成所述键合层， 从而将所述第一发光外延 结构和第一发光外延结构连接起来， 并通过所述导电结构形成电性连 接；
其中， 所述第一发光外延结构发出的光激发所述光转换层发出第三波 长的光， 并穿透所述键合层向上射出。
PCT/CN2018/081676 2017-08-21 2018-04-03 发光二极管及其制作方法 WO2019037429A1 (zh)

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