WO2019034574A1 - Procédé de réalisation de couches ultraminces sur des substrats - Google Patents

Procédé de réalisation de couches ultraminces sur des substrats Download PDF

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Publication number
WO2019034574A1
WO2019034574A1 PCT/EP2018/071859 EP2018071859W WO2019034574A1 WO 2019034574 A1 WO2019034574 A1 WO 2019034574A1 EP 2018071859 W EP2018071859 W EP 2018071859W WO 2019034574 A1 WO2019034574 A1 WO 2019034574A1
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WIPO (PCT)
Prior art keywords
layer
substrate
layers
film
liquid
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PCT/EP2018/071859
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German (de)
English (en)
Inventor
Sebastian Runde
Heiko AHRENS
Christiane A. Helm
Original Assignee
Universität Greifswald
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Publication of WO2019034574A1 publication Critical patent/WO2019034574A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C6/00—Coating by casting molten material on the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/10—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the liquid phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/40—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal all coatings being metal coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/026—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one amorphous metallic material layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
    • C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process

Definitions

  • the invention relates to the production of ultra-thin layers of metals, semimetals and their alloys on substrates by means of the new method "forced wetting with provoked film contraction".
  • Metal oxide layers are important for modern industrial purposes. Examples are the passivating zinc oxide layer on aluminum as corrosion protection,
  • Oxide coating process as abrasion protection for tools or machine components or antireflection coatings for radiation protection.
  • the fields of application of these inorganic compounds are currently and in the future almost limitless.
  • transparent conductive thin-film systems are the key element for energy production (photovoltaics) as well as for information transfer.
  • applications of radiation absorption material in passive armor technology are known to reduce the reflection cross section with respect to radar radiation.
  • a disadvantage of the previous methods is the technological and energetic effort required to produce these high quality layers.
  • the handling of vacuum technology is mandatory. For example, the effort to realize the operation of a plasma reactor and a vacuum system, considerably.
  • the coating process is bound to island growth in the examples given, i. H.
  • a minimum layer thickness is necessary.
  • the invention is based on the object to provide a method for producing ultra-thin layers on substrates, which is low in terms of apparatus and energy Can carry out effort and with the help of which layers can be produced with a thickness which is smaller than the layer thickness of the previously known methods.
  • the invention proposes a method for producing ultra-thin layers with the method steps mentioned in claim 1. Further developments of the invention are the subject of dependent claims.
  • the method proposed by the invention makes it possible to produce ultrathin layers in the range of 3 nm to 25 nm thickness.
  • the method is able to manage without the technical and energy expense of conventional coating techniques.
  • the invention is suitable for the production of layers of different metals / semimetals and their alloys. Specifically, examples may be mentioned: gallium, indium, bismuth, tin, zinc, aluminum, germanium and their alloys. These inorganic substances described here have the following common features:
  • the transparency of the metallic oxides / hydroxides can be influenced by annealing
  • the metallic oxides / hydroxides may have semiconductor properties.
  • the method is not limited to the said elements / element compounds but also applicable to other elements, such as antimony, arsenic, boron, tellurium and especially thallium and alloys of these elements.
  • the method proposed by the invention can be due to the low
  • the layer material is heated and then dropped in liquid form onto the surface of the substrate to be coated.
  • the heating can be done for example in a bottle or other container.
  • the application of the drops can take place at a larger surface to be coated in several places.
  • it may be provided in a development to do this using a scraper.
  • the scraper can be moved over the substrate to distribute the liquid.
  • the substrate can also be moved.
  • the surface of the liquid layer is touched in an embodiment of the invention, for example with an edge of the scraper. This creates the tearing of the liquid film of material with the adjoining one
  • the substrate can be made oblique in a further embodiment of the invention.
  • the multiple layers may be layers of the same material or different materials. It is also possible to use the same but differently pre-processed or preprocessed material for the further layers.
  • the substrate is heated before and / or during the application of the layer.
  • the method can be carried out in a normal atmosphere and / or under normal conditions.
  • Oxygen partial pressure and coating time is changed.
  • the conductivity duration of a layer system is preset by means of the selection of the stoichiometric composition of the materials used and / or the number of layers deposited. It has been found that a multilayer produced by the process progressively has a lower surface roughness from layer to layer than the substrate on which the layers were deposited. Therefore, the method of reducing the surface roughness of the final product from the substrate can be used.
  • Figure 1A is a schematic representation of the method proposed by the invention for producing ultrathin layers
  • Figure 1B is a schematic representation of the method from another direction
  • Figure 2 is an illustration of a glass substrate having a stepped triple layer
  • FIG. 3 shows a graphic representation for demonstrating the achieved layer thicknesses in a single layer as well as in multilayer systems by means of X-ray reflectometry
  • Figure 4 is a table of the results of X-ray reflectometry of Figure 3 and a
  • FIG. 5 shows a graphical representation for indicating the possible conductivities of FIG
  • FIG. 6 shows a graphical representation for indicating the possible conductivities of FIG
  • FIG. 7 shows a graphic representation for specifying the transparency of multilayers
  • FIG. 8 shows a graphic representation of the achieved layer thicknesses in a single layer and in multilayer systems by means of X-ray reflectometry
  • FIGS. 1-7 The exemplary embodiments illustrated in FIGS. 1-7 were carried out with the aid of gallium or gallium hydroxide.
  • FIG. 8 relates to a gallium-indium alloy and FIG. 9 to a gallium-indium-tin alloy.
  • gallium is liquefied in a polyethylene bottle.
  • the polyethylene bottle with gallium is in a
  • the liquefied gallium is poured onto the wet-chemically cleaned substrates 1 by means of a Pasteur pipette made of clear soda lime glass.
  • Pretreatment of substrates 1 is performed with RCA cleaning.
  • the substrates 1 are located on any smooth base 10 (see FIG. 1B) on a hotplate which provides a constant process temperature of 35 ° C. for working with pure gallium. For certain alloys, the temperature may be higher. This will help prevent potential undesirable solidification by crystallization of the metal on substrate 1.
  • the amount of liquid gallium used will vary depending on the intended sample size.
  • FIG. 1A it can be seen how the deposition of the ultrathin layer of gallium 2 on various substrates 1 with a silicon wafer as a preparation instrument, hereinafter referred to as scraper 3, is realized.
  • scraper 3 a preparation instrument
  • scraper 3 To ensure positive engagement between the substrate 1 and scraper 3, a straight as possible breaking edge on scraper 3 is to be used.
  • This scraper 3 to whose
  • Realization of the silicon wafer is broken in the crystal plane and RCA is cleaned, is placed at an angle of about 90 ° on the substrate 1 and brought to the already on the substrate 1 located liquid gallium 2, see the position 1 on the left in Figure 1A.
  • the scraper 3 is arranged to act on the substrate 1 only by contact with the liquid gallium 2, but no direct contact between it
  • Scraper 3 and the substrate 1 takes place. This would lead to unwanted scratch-like defects on or in the layers.
  • To avoid this direct contact spacers can be used, which are, for example, glass slide 5 with a thickness of 1 mm and thereon unpolished
  • Silicon wafer 6 can act with a thickness of about 0.4 mm. Due to their rough surface structure, these silicon wafers 6 are not wetted by gallium.
  • the scraper 3 is then tilted against the gallium 2, so that it is in contact with the gallium 2 over a larger area.
  • the scraper 3 is now held at an angle of about 60 ° to 80 ° to the substrate 1.
  • the substrate 1 is then slowly and constantly moved under the scraper 3, as attempted by the various positions 1 to 4 in Figure 1A.
  • the angle between the scraper 3 and the substrate 1 is reduced during this movement to about 45 °.
  • a speed of 3.5 mm / s can be assumed.
  • the thus accumulated liquid gallium 2 is applied evenly on the substrate 1 by the scraper 3. This creates an approximately 1.5 mm thick and closed liquid gallium cover on the entire substrate. 1
  • an ultrathin gallium coating is produced on top of the substrate 1.
  • the process can be repeated several times, whereby the same material or another material can be used for the following layers.
  • the conclusion at the interface between layer and air forms a cover layer with defined electron density.
  • the final overcoat of a multilayer can provide protection to the underlying layers and provide for sustained electrical conductivity of the multilayers.
  • FIG. 2 shows a graphic representation of a soda-lime glass slide 1.
  • a multi-layer system composed of triple Ga / Ga (OH) x is deposited on the slide 1 and designated accordingly.
  • the short sides of the glass slide still show the liquid residue of spent gallium. In between, you can clearly see the homogeneous
  • Ga / Ga (OH) x triple layer The left side of the image shows an uncoated part of the glass slide 1, followed to the right by a single layer, then a double layer and finally the homogeneous triple layer.
  • FIG. 3 shows the results of X-ray reflectometry. Shown on the left side are the measured Ga / Ga (OH) x multilayers of single to eightfold layers (1 L to 8 L). The closed symbols here are data points, solid lines the
  • the electron density profiles clearly show the periodically changing A / B formation of the deposited multilayers. From separated measurements of the surface roughness of the substrates used and in comparison to the here The results presented show an extraordinary behavior of the Ga / Ga (OH) x multilayers. Layer by layer, the originally high roughness of the substrate is compensated. As a result, the multilayers have lower interfacial and surface roughness than the pure substrates.
  • the graph at the bottom right in FIG. 3 shows the monotonous increase in the total layer thickness with the number of coating steps.
  • the final thickness of a single layer is about 3.5 nm and the thickness of an eightfold layer is about 23 nm.
  • FIG. 4 shows a model of a multilayer. This model was developed to describe the Ga / Ga (OH) x system, but it also applies to the low-melting alloys in a first approximation.
  • Ig total thickness of the layer system
  • 1 2 low electron density component (for example, gallium hydroxide)
  • Irep repeating unit of Ii + l 2 (generated per coating cycle)
  • Itop passivating cap at the film / air interface with lowest
  • Electron density throughout the layer system is Electron density throughout the layer system.
  • FIG. 5 now shows the dependencies of the electrical resistivity with the number of layers produced. It can be seen that the single layer (1 L) oxidizes within 60 days. Although this process is associated with the increase in transparency, but with loss of electrical conductivity. The latter comes to a halt after about 60 days.
  • the double layer (2 L) shows not only a lower resistivity than the single layer but also a reinforced one
  • FIG. 6 summarizes the results from FIG. 5 with the addition of the results of the individual layer thicknesses from X-ray reflectometry (FIG. 3) and shows the trend of FIG Development of the electrical resistivity between the day 0 and the day 60 since the layer production.
  • the specific resistance of the electrically conductive portion (gallium) is plotted against the determined total layer thickness.
  • the graph also corroborates the statement that the specific resistance decreases per layer number or, conversely, that the electrical conductivity increases.
  • a protective mechanism with respect to the electrical conductivity is established which, starting at a quadruple layer (4 L), ensures stability of the conductivity over the time period shown.
  • This wavelength interval is also the working range of photovoltaic and transparent conductive components, with which the layers produced here appear formally predestined for such applications as electrode material.
  • FIG. 7 now shows results from the spectroscopic measurement, especially in the range VIS / NIR (wavelength spectrum of the visible and the near infrared light). The figure shows that, although the absorption of light with increasing
  • FIG. 8 shows the results of X-ray reflectometry. Shown on the left side are the measured Galn / Galn (OH) x multilayers from single to quadruple layer (1 L to 4 L). For clarity, the Fresnel-normalized reflection cures were shifted vertically. The layer thicknesses were determined by the amplitude distances of the
  • FIG. 9 shows the results of X-ray reflectometry. Shown in the upper illustration are the measured GalnSn / GalnSn (OH) x multilayers from single to Quadruple layer (1 L to 4 L). For clarity, the Fresnel normalized reflection cures were shifted vertically. The layer thicknesses were over the
  • Gallium / indium / tin is 7: 2: 1. This corresponds approximately to the eutectic of the system.
  • the coating method can save energy, equipment, personnel and time.
  • the coating method can replace or supplement the known conventional coating methods.
  • new applications result from special internal structures of multilayers prepared by forced wetting with provoked film contraction.
  • Electrode material for photovoltaic elements most of the production methods of materials for this application area are based on an epitaxial growth of the layers. This has the consequence that one
  • each multilayer can be changed, the multilayer from layer to layer
  • the starting materials used or their layered products have so-called light-trapping structures and are thus able, for example, to utilize solar photons energetically.
  • Metals / semi-metals / alloys This can be realized if the layer sequence is deliberately chosen so that strong light-absorbing alloys are deposited near the substrate and overlying layers of alloys are deposited, which successively absorb less light. A tandem solar cell of this shape would have great potential to use a wider range of the solar electromagnetic spectrum than was previously possible.
  • RAM radiation absorption material
  • RAMs have structural properties that produce phase jumps of radiation through the material.
  • the invention shows that distances of the
  • metallic components of a layer can be adjusted by controlling the growth of the oxide or hydroxide. This results in homogeneous and lateral extended layers with vertical alternating composition in defined
  • Antireflection coatings for optical applications in research and technology are also conceivable with the coating method described.
  • such coated glass substrates as a beam splitter (coupling out partial beams of the
  • Beam geometry where their performance can be regulated by the number of layers deposited and by the use of defined materials / alloys.
  • the inventive method can also serve as a coating method for glasses of all kinds (windows, building facades, vehicle windows), for glazed clay tiles or polished metal components, provided that they have sufficient smooth and wettable surfaces.
  • the method can be used in applications where a high microhardness is required for a small layer thickness.
  • the layers tend to be thermally animated
  • Oxidation not only increases its transparency, but also becomes
  • Thickness growth excited where they continue to be stable as a solid body.
  • Another application may find the method in cases where it is necessary to use a material that changes over time from an electrical conductor to an insulator, but without losing any other properties. This is made possible by the processual implementation of the coating steps by means of the invention and by the use of the already known starting materials. Single or double layers are suitable for this because they lose their conductivity in a chronologically manageable framework.

Abstract

L'invention concerne un procédé pour la réalisation de couches ultraminces, constituées par un métal/des oxydes métalliques/des hydroxydes métalliques, sur des substrats (1) tout en exploitant les propriétés des substances de départ. L'invention porte sur différentes possibilités de construction en ce qui concerne le nombre de couches, la succession des couches, la composition matérielle ainsi que les différentes épaisseurs des couches. Le procédé permet la construction de systèmes à couches, dont les rugosités des limites et de surfaces sont inférieures à celle des substrats utilisés.
PCT/EP2018/071859 2017-08-14 2018-08-13 Procédé de réalisation de couches ultraminces sur des substrats WO2019034574A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017118471.6 2017-08-14
DE102017118471.6A DE102017118471A1 (de) 2017-08-14 2017-08-14 Verfahren zur Herstellung ultradünner bis dünner Schichten auf Substraten

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WO2019034574A1 true WO2019034574A1 (fr) 2019-02-21

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111451596A (zh) * 2020-04-07 2020-07-28 李志军 一种铜板焊锡装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992005913A2 (fr) * 1990-10-09 1992-04-16 Eastman Kodak Company Procede et appareil servant a produire une ebauche dans un amalgame
DE69306565T2 (de) 1993-07-30 1997-06-12 Ibm Vorrichtung und Verfahren um feine Metal-linie auf einem Substrat abzulegen
EP2393964B1 (fr) 2009-02-06 2013-09-11 SoloPower, Inc. Procédés de galvanoplastie et éléments chimiques pour le dépôt de couches minces contenant du cuivre-indium-gallium
DE102013206934A1 (de) * 2013-04-17 2014-10-23 Verein zur Förderung von Innovationen durch Forschung, Entwicklung und Technologietransfer e.V. (Verein INNOVENT e.V.) Verfahren zur Metallisierung eines Substrats

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69316268T2 (de) * 1992-06-04 1998-04-30 Matsushita Electric Ind Co Ltd Verfahren zum Herstellen von Glasgegenständen
JP4578100B2 (ja) * 2001-12-18 2010-11-10 旭化成イーマテリアルズ株式会社 金属酸化物分散体
EP3034158A1 (fr) * 2014-12-17 2016-06-22 Universität Potsdam Procédé et dispositif destinés à la fabrication de films ultra-minces

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992005913A2 (fr) * 1990-10-09 1992-04-16 Eastman Kodak Company Procede et appareil servant a produire une ebauche dans un amalgame
DE69306565T2 (de) 1993-07-30 1997-06-12 Ibm Vorrichtung und Verfahren um feine Metal-linie auf einem Substrat abzulegen
EP2393964B1 (fr) 2009-02-06 2013-09-11 SoloPower, Inc. Procédés de galvanoplastie et éléments chimiques pour le dépôt de couches minces contenant du cuivre-indium-gallium
DE102013206934A1 (de) * 2013-04-17 2014-10-23 Verein zur Förderung von Innovationen durch Forschung, Entwicklung und Technologietransfer e.V. (Verein INNOVENT e.V.) Verfahren zur Metallisierung eines Substrats

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111451596A (zh) * 2020-04-07 2020-07-28 李志军 一种铜板焊锡装置

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