WO2019033536A1 - 蒸发源 - Google Patents

蒸发源 Download PDF

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Publication number
WO2019033536A1
WO2019033536A1 PCT/CN2017/106790 CN2017106790W WO2019033536A1 WO 2019033536 A1 WO2019033536 A1 WO 2019033536A1 CN 2017106790 W CN2017106790 W CN 2017106790W WO 2019033536 A1 WO2019033536 A1 WO 2019033536A1
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WO
WIPO (PCT)
Prior art keywords
evaporation source
electrode connection
connection end
electrode
cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/106790
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English (en)
French (fr)
Inventor
邹新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US15/576,822 priority Critical patent/US10801101B2/en
Publication of WO2019033536A1 publication Critical patent/WO2019033536A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material

Definitions

  • the invention relates to the field of vacuum coating technology, in particular to an evaporation source.
  • the evaporation material needs to be evaporated (or sublimated) into steam by an evaporation source, and the vapor forms a film layer after the surface of the object to be vaporized is condensed. Therefore, whether the vapor generated by the evaporation source is uniform is important for the quality of the formed film layer.
  • the evaporation source is usually in the form of a "line source", which comprises a long-shaped chamber, a plurality of air outlet holes are uniformly opened at the top of the chamber, and a crucible is connected at the bottom, and the crucible is used for containing the vapor deposition material and evaporating it.
  • the steam enters the chamber and exits the nozzle.
  • the film formation quality is directly related to the temperature and rate of evaporation.
  • the evaporation material needs to be heated evenly.
  • the evaporation source of the production line causes the uneven temperature distribution of the crucible. The main reasons are: deformation of the heating wire, displacement of the crucible, thermal deformation around the crucible, and thermal conduction environment.
  • the enthalpy is unevenly heated, so that the evaporation material in the evaporation chamber is unevenly heated, and the film formation quality is poor, and it is difficult to produce a high-quality OLED display panel.
  • the invention provides an evaporation source, which can heat the regions of the material chamber uniformly, and further form a high-quality film layer by vapor deposition to solve the evaporation source of the prior art, and the heat is not uniform, so that the steaming in the vapor deposition chamber is performed.
  • the plating material is unevenly heated, and the film forming quality is not good, so that it is difficult to produce a technical problem of a high-quality OLED display panel.
  • the invention provides an evaporation source comprising an evaporation source body made of a conductive material; the evaporation source body comprises:
  • a first electrode connecting end is disposed on the outer side of the main body, and a second electrode connecting end opposite in polarity to the first electrode connecting end, wherein the first electrode connecting end and the second electrode connecting end are energized,
  • the body itself conducts electricity to generate heat to heat the material within the material chamber;
  • the inner wall of the material chamber is coated with a coating that is used to prevent the vapor deposition material from chemically reacting with the material of the body.
  • the evaporation source body further includes: a cover body covering the surface of the main body to seal the material chamber; the cover body surface integrally formed with at least one nozzle; the cover body
  • the third electrode connection end is disposed at an arbitrary position on the outer side, and the fourth electrode connection end is opposite in polarity to the third electrode connection end, and the third electrode connection end and the fourth electrode connection end are energized,
  • the cover itself conducts electricity to generate heat to heat the nozzle.
  • the first electrode connection end is located at a first end of the body, and the second electrode connection end is located at a second end of the body opposite the first end of the body ;
  • the third electrode connection end is located at a first end of the cover body, and the fourth electrode connection end is located at a second end of the cover body opposite to the first end of the cover body.
  • the first electrode connection end and the third electrode connection end are both positive electrodes, and the second electrode connection end and the fourth electrode connection end are both negative electrodes;
  • the first electrode connection end and the third electrode connection end are located on the same side of the evaporation source body; the second electrode connection end and the fourth electrode connection end are located on the same side of the evaporation source body.
  • the body shape is close to a rectangular parallelepiped, the first end portion is located at a center position of an end surface of the main body, and the second end portion is located at a center position of the other end surface of the main body;
  • the cover body has a shape close to a rectangular parallelepiped, the third end portion is located at a center position of one end surface of the cover body, and the fourth end portion is located at a center position of the other end surface of the cover body.
  • the main body and the cover are made of a high melting point material, and the high melting point material is one or two of W, Ni, Cr, Cu, Fe, Al, Nb, Mo, Ti. The combination of the above.
  • the coating is a combination of one or more of Cu, Ti, Al2O3, MgO, BN, Si3N4, PBN, graphite, quartz, ceramic.
  • the bottom of the main body protrudes to form a sub-material chamber
  • one side of the sub-material chamber is provided with a fifth electrode connecting end
  • the sub-material chamber is provided with a sixth side opposite to the other side.
  • the electrode connection end, the fifth electrode connection end and the sixth electrode connection end are opposite in polarity.
  • the sub-material chamber is located at a central position of the bottom of the body.
  • the present invention also provides another evaporation source comprising an evaporation source body made of a conductive material; the evaporation source body comprising:
  • a first electrode connecting end is disposed on the outer side of the main body, and a second electrode connecting end opposite in polarity to the first electrode connecting end, wherein the first electrode connecting end and the second electrode connecting end are energized,
  • the body itself conducts electricity to generate heat to heat the material within the material chamber.
  • the evaporation source body further includes: a cover body covering the surface of the main body to seal the material chamber; the cover body surface integrally formed with at least one nozzle; the cover body
  • the third electrode connection end is disposed at an arbitrary position on the outer side, and the fourth electrode connection end is opposite in polarity to the third electrode connection end, and the third electrode connection end and the fourth electrode connection end are energized,
  • the cover itself conducts electricity to generate heat to heat the nozzle.
  • the first electrode connection end is located at a first end of the body, and the second electrode connection end is located at a second end of the body opposite the first end of the body ;
  • the third electrode connection end is located at a first end of the cover body, and the fourth electrode connection end is located at a second end of the cover body opposite to the first end of the cover body.
  • the first electrode connection end and the third electrode connection end are both positive electrodes, and the second electrode connection end and the fourth electrode connection end are both negative electrodes;
  • the first electrode connection end and the third electrode connection end are located on the same side of the evaporation source body; the second electrode connection end and the fourth electrode connection end are located on the same side of the evaporation source body.
  • the body shape is close to a rectangular parallelepiped, the first end portion is located at a center position of an end surface of the main body, and the second end portion is located at a center position of the other end surface of the main body;
  • the cover body has a shape close to a rectangular parallelepiped, the third end portion is located at a center position of one end surface of the cover body, and the fourth end portion is located at a center position of the other end surface of the cover body.
  • the main body and the cover are made of a high melting point material, and the high melting point material is one or two of W, Ni, Cr, Cu, Fe, Al, Nb, Mo, Ti. The combination of the above.
  • the bottom of the main body protrudes to form a sub-material chamber
  • one side of the sub-material chamber is provided with a fifth electrode connecting end
  • the sub-material chamber is provided with a sixth side opposite to the other side.
  • the electrode connection end, the fifth electrode connection end and the sixth electrode connection end are opposite in polarity.
  • the sub-material chamber is located at a central position of the bottom of the body.
  • the invention has the beneficial effects that the evaporation source provided by the invention is made of a conductive material compared with the existing evaporation source, and the evaporation source can be realized by setting the positive and negative electrodes at corresponding positions of the evaporation source.
  • the heat is generated to obtain a uniform heating effect, and the high-quality film layer is obtained by vapor deposition; the evaporation source of the prior art is solved, and the heat is not uniform, so that the vapor deposition material in the vapor deposition chamber is unevenly heated, and the film forming quality is insufficient. It is difficult to produce a high quality OLED display panel.
  • FIG. 1 is a schematic structural view of an evaporation source provided by the present invention
  • FIG. 2 is another schematic structural view of an evaporation source provided by the present invention.
  • the invention is directed to the prior art evaporation source, the heat unevenness of the crucible, the unevenness of the vapor deposition material in the vapor deposition chamber, the poor film formation quality, and the technical problem of producing a high quality OLED display panel.
  • This embodiment can solve the drawback.
  • the evaporation source provided by the present invention comprises an evaporation source body; the evaporation source body itself is made of a conductive material, and the evaporation source body is different due to different melting points of various materials heated by the evaporation source.
  • the conductive material is selected from high melting point metal materials, for example, W (tungsten), Ni (nickel), Cr (chromium), Cu (copper), Fe (iron), Al (aluminum), Nb ( ⁇ ), Mo (molybdenum), One or a combination of two or more of Ti (titanium).
  • the evaporation source body includes at least a main body 101, the main body 101 is a crucible, and the main body 101 is cast from a liquid metal material, and a material chamber 102 is formed inside the main body 101, and the material chamber 102 is The opening is located on the surface of the main body 101; the material chamber 102 is provided with a vapor deposition material, and the main body 101 is heated to evaporate the evaporation material to form a metal film layer on the surface of the target substrate.
  • a first electrode connection end 103 and a second electrode connection end 104 are disposed on an outer side of the main body 101, and the first electrode connection end 103 is connected to a positive electrode interface of a power source, and the second electrode connection end 104 is connected to the The negative electrode interface of the power source.
  • the main body 101 acts as a conductor to convert electrical energy into thermal energy.
  • the current passing through the main body 101 is a heating region, and the current distribution depends on the conductivity of the conductive material. Therefore, the conductivity is selected.
  • the body 101 made of a preferred material has better heating uniformity.
  • the main body 101 is heated by using a heating wire compared to the prior art, and the distribution of the heating wire plays a decisive role in the uniformity of heating of the main body 101.
  • the heating wire is distributed outside the main body 101 through The heating wire first heats the outer surface of the main body 101, and then transfers heat to the material chamber 102 located inside the main body 101 by heat transfer of the main body 101 itself, and heats the surface of the main body 101 from the heating wire.
  • heat is partially consumed during conduction, causing the temperature within the material chamber 102 to be difficult to control.
  • the evaporation source body further includes a cover 105, the cover 105 covers the surface of the main body 101, and the cover 105 is sealingly coupled with the material chamber 102 on the main body 101;
  • a nozzle 106 is disposed on a side of the body 105 away from the sealing chamber, and the nozzle 106 is used for uniformly spraying the evaporation material evaporated in the material chamber 102 to the surface of the target substrate; wherein the cover 105 is The high-melting-point conductive material is also used; the nozzle 106 disposed on the surface of the cover 105 and the cover 105 are made of the same material and integrally formed.
  • the outer side of the cover body 105 is provided with a third electrode connection end 107 and a fourth electrode connection end 108, and the third electrode is connected to the positive electrode interface of the power source, and the second electrode connection end 104 is connected to the The negative electrode interface of the power source, in the same way, the cover body 105 introduces a current to generate heat, and the vapor deposition material adhered to the bottom of the cover body 105 is heated and sublimated twice, and is discharged through the nozzle 106 to avoid waste of materials. At the same time, the nozzle 106 also generates heat. By heating the nozzle 106, it is possible to prevent the vapor deposition material from condensing in the nozzle 106 and causing the nozzle 106 to clog.
  • the first electrode connection end 103 is located at a first end of the main body 101, and the second electrode connection end 104 is located at a second end of the main body 101 opposite the first end of the main body;
  • the first electrode connection end 103 and the second electrode connection end 104 are described, the first electrode connection end 103 and the second electrode connection end 104 are disposed at both ends of the main body 101, thereby extending the The distance between the first electrode connection end 103 and the second electrode connection end 104, the current distribution on the main body 101 is wider, so that the heat distribution of the main body 101 is uniform.
  • the third electrode connection end 107 is located at the first end of the cover body 105
  • the fourth electrode connection end 108 is located at the first end of the cover body 105 opposite to the cover body. Second end.
  • the first electrode connection end 103 and the third electrode connection end 107 are both positive electrodes, and the second electrode connection end 104 and the fourth electrode connection end 108 are both negative electrodes; wherein the first electrode The electrode connection end 103 and the third electrode connection end 107 are located on the same side of the evaporation source body; the second electrode connection end 104 and the fourth electrode connection end 108 are located on the same side of the evaporation source body; Relative to the same side of the evaporation source body, the electrode connection ends of different components have different polarities. Since the opposite electrode attracts, the current flow direction is changed, and the current changes from the ideal lateral movement to the longitudinal movement, resulting in the concentration of heat. The edge of the evaporation source body cannot achieve the effect of uniform heating; by setting the electrode connection ends of the same polarity on the same side, the above technical problem can be better solved.
  • the main body 101 has a shape close to a rectangular parallelepiped, a first end of the main body 101 is located at a central position of an end surface of the main body 101, and a second end of the main body 101 is located at a central position of the other end surface of the main body 101;
  • the cover body 105 has a shape close to a rectangular parallelepiped, the first end of the cover body 105 is located at a central position of one end surface of the cover body 105, and the second end of the cover body 105 is located at the center of the other end surface of the cover body 105.
  • an anti-reactive coating 109 is applied to the inner wall of the material chamber 102 and the bottom of the cover 105;
  • Layer 109 is Cu (copper), Ti (titanium), Al2O3 (alumina), MgO (magnesium oxide), BN (boron nitride), Si3N4 (silicon nitride), PBN (polycrystalline boron nitride), graphite, Quartz, one or a combination of two or more.
  • the present invention further provides an evaporation source, including an evaporation source body, the evaporation source body includes a main body 201, a surface of the main body 201 is provided with a material chamber 202, and a surface of the main body 201 is provided with a cover. 203, the cover body 203 covers the surface of the main body 201, and the cover body 203 is sealingly coupled with the material chamber 202 on the main body 201; a nozzle 204 is disposed on one side of the cover body.
  • the first end of the main body 201 is provided with a first electrode connecting end 205, and the second end of the opposite end of the main body is provided with a second electrode connecting end 206; the first end of the cover is provided with a third end
  • the electrode connecting end 207 is provided with a fourth electrode connecting end 208 at a second end of the opposite end of the cover.
  • a sub-material chamber 212 is protruded from a center of a bottom portion of the main body 201, a fifth electrode connection end 209 is disposed on one side of the sub-material chamber 212, and a sixth electrode connection is disposed on the other side of the sub-material chamber 212.
  • the terminal 210, the fifth electrode connection end 209 and the sixth electrode connection end 210 are opposite in polarity.
  • the material chamber 202, the sub-material chamber 212 and the bottom of the cover 203 are coated with a chemically resistant coating 211.
  • the heating method of the evaporation source provided by the invention can set the positive electrode connection end and the negative electrode connection end on the corresponding components for different heating requirements, thereby achieving uniform heating of the evaporation source body.
  • the invention has the beneficial effects that the evaporation source provided by the invention is made of a conductive material compared with the existing evaporation source, and the evaporation source can be realized by setting the positive and negative electrodes at corresponding positions of the evaporation source.
  • the heat is generated to obtain a uniform heating effect, and the high-quality film layer is obtained by vapor deposition; the evaporation source of the prior art is solved, and the heat is not uniform, so that the vapor deposition material in the vapor deposition chamber is unevenly heated, and the film forming quality is insufficient. It is difficult to produce a high quality OLED display panel.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种蒸发源，包括由导电材料制成的蒸发源本体；蒸发源本体包括：主体(101)，主体(101)内部开设有材料腔室(102)；主体(101)外侧的设置有第一电极连接端(103)，以及与第一电极连接端(103)极性相反的第二电极连接端(104)，第一电极连接端(103)与第二电极连接端(104)通电后，主体(101)自身导电产生热量以加热材料腔室(102)内的材料。

Description

蒸发源 技术领域
本发明涉及真空镀膜技术领域，尤其涉及一种蒸发源。
 背景技术
在真空镀膜过程中，需要通过蒸发源将蒸镀材料蒸发（或升华）为蒸汽，蒸汽在待蒸镀物体表面凝结后形成膜层。因此，蒸发源产生的蒸汽是否均匀，对所形成的膜层的质量是十分重要的。蒸发源通常为“线源”形式，其包括长条形的腔室，腔室顶部均匀开设有多个出气孔，底部则连接坩埚，坩埚用于盛放蒸镀材料并将其蒸发，产生的蒸汽进入腔室后并从喷嘴排出。
成膜质量与蒸镀的温度、速率有直接联系。要得到均匀的膜层，就需要蒸镀材料受热均匀。而目前产线在用的蒸发源导致坩埚温度分布不均主要原因有：加热丝变形，坩埚放置偏位、坩埚周围热反射受热变形等导致的热传导环境发生改变。
综上所述，现有技术的蒸发源，坩埚受热不均匀，使得蒸镀腔室内的蒸镀材料受热不均匀，成膜质量欠佳，进而难以生产出高品质的OLED显示面板。
 技术问题
本发明提供一种蒸发源，能够使材料腔室的各区域受热均匀，进而蒸镀形成高品质的膜层，以解决现有技术的蒸发源，坩埚受热不均匀，使得蒸镀腔室内的蒸镀材料受热不均匀，成膜质量欠佳，进而难以生产出高品质的OLED显示面板的技术问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种蒸发源，包括由导电材料制成的蒸发源本体；所述蒸发源本体包括：
主体，所述主体内部开设有材料腔室，所述材料腔室的开口位于所述主体表面；其中，
所述主体外侧设置有第一电极连接端，以及与所述第一电极连接端极性相反的第二电极连接端，所述第一电极连接端与所述第二电极连接端通电后，所述主体自身导电产生热量以加热所述材料腔室内的材料；
所述材料腔室内壁涂覆有用以避免蒸镀材料与所述主体的制作材料发生化学反应的涂层。
根据本发明一优选实施例，所述蒸发源本体还包括：盖体，盖合于所述主体表面以密闭所述材料腔室；所述盖体表面一体成形有至少一喷嘴；所述盖体外侧的任意位置设置有第三电极连接端，以及与所述第三电极连接端极性相反的第四电极连接端，所述第三电极连接端与所述第四电极连接端通电后，所述盖体自身导电产生热量以加热所述喷嘴。
根据本发明一优选实施例，所述第一电极连接端位于所述主体的第一端部，所述第二电极连接端位于所述主体相对所述主体的第一端部的第二端部；
所述第三电极连接端位于所述盖体的第一端部，所述第四电极连接端位于所述盖体相对所述盖体的第一端部的第二端部。
根据本发明一优选实施例，所述第一电极连接端与所述第三电极连接端同为正电极，所述第二电极连接端与所述第四电极连接端同为负电极；其中，所述第一电极连接端与所述第三电极连接端位于所述蒸发源本体的同一侧；所述第二电极连接端与所述第四电极连接端位于所述蒸发源本体的同一侧。
根据本发明一优选实施例，所述主体形状接近长方体，所述第一端部位于所述主体一端面的中心位置，所述第二端部位于所述主体另一端面的中心位置；所述盖体形状接近长方体，所述第三端部位于所述盖体一端面的中心位置，所述第四端部位于所述盖体另一端面的中心位置。
根据本发明一优选实施例，所述主体与所述盖体采用高熔点材料制作，所述高熔点材料为W，Ni，Cr，Cu，Fe，Al，Nb，Mo，Ti的一者或两者以上的组合。
根据本发明一优选实施例，所述涂层为Cu，Ti，Al2O3，MgO，BN，Si3N4，PBN，石墨，石英，陶瓷的一者或两者以上的组合。
根据本发明一优选实施例，所述主体底部突出形成一子材料腔室，所述子材料腔室一侧设置有第五电极连接端，所述子材料腔室相对另一侧设置有第六电极连接端，所述第五电极连接端与所述第六电极连接端极性相反。
根据本发明一优选实施例，所述子材料腔室位于所述主体底部中心位置。
本发明还提供另一种蒸发源，包括由导电材料制成的蒸发源本体；所述蒸发源本体包括：
主体，所述主体内部开设有材料腔室，所述材料腔室的开口位于所述主体表面；其中，
所述主体外侧设置有第一电极连接端，以及与所述第一电极连接端极性相反的第二电极连接端，所述第一电极连接端与所述第二电极连接端通电后，所述主体自身导电产生热量以加热所述材料腔室内的材料。
根据本发明一优选实施例，所述蒸发源本体还包括：盖体，盖合于所述主体表面以密闭所述材料腔室；所述盖体表面一体成形有至少一喷嘴；所述盖体外侧的任意位置设置有第三电极连接端，以及与所述第三电极连接端极性相反的第四电极连接端，所述第三电极连接端与所述第四电极连接端通电后，所述盖体自身导电产生热量以加热所述喷嘴。
根据本发明一优选实施例，所述第一电极连接端位于所述主体的第一端部，所述第二电极连接端位于所述主体相对所述主体的第一端部的第二端部；
所述第三电极连接端位于所述盖体的第一端部，所述第四电极连接端位于所述盖体相对所述盖体的第一端部的第二端部。
根据本发明一优选实施例，所述第一电极连接端与所述第三电极连接端同为正电极，所述第二电极连接端与所述第四电极连接端同为负电极；其中，所述第一电极连接端与所述第三电极连接端位于所述蒸发源本体的同一侧；所述第二电极连接端与所述第四电极连接端位于所述蒸发源本体的同一侧。
根据本发明一优选实施例，所述主体形状接近长方体，所述第一端部位于所述主体一端面的中心位置，所述第二端部位于所述主体另一端面的中心位置；所述盖体形状接近长方体，所述第三端部位于所述盖体一端面的中心位置，所述第四端部位于所述盖体另一端面的中心位置。
根据本发明一优选实施例，所述主体与所述盖体采用高熔点材料制作，所述高熔点材料为W，Ni，Cr，Cu，Fe，Al，Nb，Mo，Ti的一者或两者以上的组合。
根据本发明一优选实施例，所述主体底部突出形成一子材料腔室，所述子材料腔室一侧设置有第五电极连接端，所述子材料腔室相对另一侧设置有第六电极连接端，所述第五电极连接端与所述第六电极连接端极性相反。
根据本发明一优选实施例，所述子材料腔室位于所述主体底部中心位置。
 有益效果
本发明的有益效果为：相较于现有的蒸发源，本发明所提供的蒸发源，自身采用导电材料制成，通过在蒸发源的相应位置设置正、负电极即可实现蒸发源的自发热，进而得到均匀的加热效果，蒸镀制得高品质的膜层；解决了现有技术的蒸发源，坩埚受热不均匀，使得蒸镀腔室内的蒸镀材料受热不均匀，成膜质量欠佳，进而难以生产出高品质的OLED显示面板。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明提供的蒸发源一结构示意图；
图2为本发明提供的蒸发源另一结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的现有技术的蒸发源，坩埚受热不均匀，使得蒸镀腔室内的蒸镀材料受热不均匀，成膜质量欠佳，进而难以生产出高品质的OLED显示面板的技术问题，本实施例能够解决该缺陷。
如图1所示，本发明提供的蒸发源，包括蒸发源本体；所述蒸发源本体自身采用导电材料制成，由于所述蒸发源加热的各种材料的熔点不同，所述蒸发源体的导电材料选用高熔点金属材料，例如，W（钨），Ni（镍），Cr（铬），Cu（铜），Fe（铁），Al（铝），Nb（铌），Mo（钼），Ti（钛）的一者或两者以上的组合。
所述蒸发源本体至少包括一主体101，所述主体101即坩埚，所述主体101由液态金属材料浇铸制成，在所述主体101内部形成一材料腔室102，所述材料腔室102的开口位于所述主体101表面；所述材料腔室102内盛置蒸镀材料，所述主体101加热后使得蒸镀材料蒸发，凝结在目标基板表面形成金属膜层。
在所述主体101的外侧设置有第一电极连接端103和第二电极连接端104，将所述第一电极连接端103连接电源的正电极接口，所述第二电极连接端104连接所述电源的负电极接口，此时，所述主体101作为导体，将电能转化为热能，所述主体101电流经过区域均为加热区域，电流的分布取决于导电材料的导电能力，因此，选择导电性能较佳的材料制得的所述主体101具备更佳的加热均匀性。
相比现有技术使用加热丝对所述主体101进行加热，加热丝的分布对所述主体101加热的均匀性起到决定性作用，通常情况下，加热丝分布于所述主体101的外部，通过加热丝先将所述主体101的外表面加热，再通过所述主体101本身的热传递将热量传递至位于所述主体101内部的所述材料腔室102，从加热丝加热所述主体101表面至所述主体101内部的所述材料腔室102，热量在传导过程会有部分消耗，导致所述材料腔室102内的温度难以控制。
所述蒸发源本体还包括一盖体105，所述盖体105盖合于所述主体101表面，所述盖体105与所述主体101上的所述材料腔室102密封结合；所述盖体105远离所述密封腔室的一侧设置有喷嘴106，所述喷嘴106用以将所述材料腔室102内蒸发的蒸镀材料均匀喷洒至目标基板的表面；其中，所述盖体105同样采用高熔点的导电材料制成；设置于所述盖体105表面的所述喷嘴106与所述盖体105采用相同材料且一体成型。
具体的，所述盖体105的外侧设置有第三电极连接端107和第四电极连接端108，将所述第三电极连接电源的正电极接口，所述第二电极连接端104连接所述电源的负电极接口，同理，所述盖体105导入电流产生热量，对粘附于所述盖体105底部的蒸镀材料进行加热二次升华，通过所述喷嘴106排出，避免材料的浪费，同时，所述喷嘴106也产生热量，通过对所述喷嘴106进行加热，可避免蒸镀材料在喷嘴106内凝结而导致喷嘴106堵塞。
所述第一电极连接端103位于所述主体101的第一端部，所述第二电极连接端104位于所述主体101相对所述主体的第一端部的第二端部；在设置所述第一电极连接端103与所述第二电极连接端104时，将所述第一电极连接端103与所述第二电极连接端104设置在所述主体101的两端位置，从而延长所述第一电极连接端103与所述第二电极连接端104之间的距离，电流在所述主体101上的分布范围则更广，从而使得所述主体101的热量分布均匀。
同理，将所述第三电极连接端107位于所述盖体105的第一端部，将所述第四电极连接端108位于所述盖体105相对所述盖体的第一端部的第二端部。
所述第一电极连接端103与所述第三电极连接端107同为正电极，所述第二电极连接端104与所述第四电极连接端108同为负电极；其中，所述第一电极连接端103与所述第三电极连接端107位于所述蒸发源本体的同一侧；所述第二电极连接端104与所述第四电极连接端108位于所述蒸发源本体的同一侧；相对于在所述蒸发源本体同一侧，不同部件的电极连接端具有不同极性，由于异性电极相吸，会改变电流的流向，电流由理想的横向移动改变为纵向移动，导致热量集中在所述蒸发源本体边缘，无法起到均匀加热的效果；通过将同极性的电极连接端设置在同一侧，能够较好的解决上述技术问题。
所述主体101形状接近长方体，所述主体101的第一端部位于所述主体101一端面的中心位置，所述主体101的第二端部位于所述主体101另一端面的中心位置；所述盖体105形状接近长方体，所述盖体105第一端部位于所述盖体105一端面的中心位置，所述盖体105的第二端部位于所述盖体105另一端面的中心位置；同理，将电极连接端设置位于主体101端面的中心，利于电流的均匀分布，进而使得所述主体101各区域热量分布均匀。
为了避免蒸镀材料与所述主体101和所述盖体105的制作材料发生化学反应，在所述材料腔室102内壁与所述盖体105底部涂覆抗反应的涂层109；所述涂层109为Cu（铜），Ti（钛），Al2O3（氧化铝），MgO（氧化镁），BN（氮化硼），Si3N4（氮化硅），PBN（聚晶氮化硼），石墨，石英，陶瓷的一者或两者以上的组合。
如图2所示，本发明还提供一种蒸发源，包括蒸发源本体，所述蒸发源本体包括主体201，所述主体201表面开设有材料腔室202，所述主体201表面设置一盖体203，所述盖体203盖合于所述主体201表面，所述盖体203与所述主体201上的所述材料腔室202密封结合；所述盖体一侧设置有喷嘴204。
所述主体201的第一端部设置第一电极连接端205，所述主体的相对另一端的第二端部设置有第二电极连接端206；所述盖体的第一端部设置第三电极连接端207，所述盖体的相对另一端的第二端部设置有第四电极连接端208。
所述主体201底部中心突出形成一子材料腔室212，所述子材料腔室212一侧设置有第五电极连接端209，所述子材料腔室212相对另一侧设置有第六电极连接端210，所述第五电极连接端209与所述第六电极连接端210极性相反。
所述材料腔室202、子材料腔室212及所述盖体203底部涂覆有抗化学反应的涂层211。
本发明所提供的蒸发源的加热方式，对于不同加热需求可在对应部件上设置正极连接端与负极连接端，从而实现蒸发源本体的均匀加热。
本发明的有益效果为：相较于现有的蒸发源，本发明所提供的蒸发源，自身采用导电材料制成，通过在蒸发源的相应位置设置正、负电极即可实现蒸发源的自发热，进而得到均匀的加热效果，蒸镀制得高品质的膜层；解决了现有技术的蒸发源，坩埚受热不均匀，使得蒸镀腔室内的蒸镀材料受热不均匀，成膜质量欠佳，进而难以生产出高品质的OLED显示面板。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (17)

  1. 一种蒸发源，其包括由导电材料制成的蒸发源本体；所述蒸发源本体包括：
    主体，所述主体内部开设有材料腔室；其中，
    所述主体外侧设置有第一电极连接端，以及与所述第一电极连接端极性相反的第二电极连接端，所述第一电极连接端与所述第二电极连接端通电后，所述主体自身导电产生热量以加热所述材料腔室内的材料；
    所述材料腔室内壁涂覆有用以避免蒸镀材料与所述主体的制作材料发生化学反应的涂层。
  2. 根据权利要求1所述的蒸发源，其中，所述蒸发源本体还包括：
    盖体，盖合于所述主体表面以密闭所述材料腔室；所述盖体表面一体成形有至少一喷嘴；
    所述盖体外侧设置有第三电极连接端，以及与所述第三电极连接端极性相反的第四电极连接端，所述第三电极连接端与所述第四电极连接端通电后，所述盖体自身导电产生热量以加热所述喷嘴。
  3. 根据权利要求2所述的蒸发源，其中，
    所述第一电极连接端位于所述主体的第一端部，所述第二电极连接端位于所述主体相对所述主体的第一端部的第二端部；
    所述第三电极连接端位于所述盖体的第一端部，所述第四电极连接端位于所述盖体相对所述盖体的第一端部的第二端部。
  4. 根据权利要求3所述的蒸发源，其中，所述第一电极连接端与所述第三电极连接端同为正电极，所述第二电极连接端与所述第四电极连接端同为负电极；其中，
    所述第一电极连接端与所述第三电极连接端位于所述蒸发源本体的同一侧；
    所述第二电极连接端与所述第四电极连接端位于所述蒸发源本体的同一侧。
  5. 根据权利要求3所述的蒸发源，其中，
    所述主体的第一端部位于所述主体一端面的中心位置，所述主体的第二端部位于所述主体另一端面的中心位置；
    所述盖体的第一端部位于所述盖体一端面的中心位置，所述盖体的第二端部位于所述盖体另一端面的中心位置。
  6. 根据权利要求2所述的蒸发源，其中，所述主体与所述盖体采用高熔点材料制作，所述高熔点材料为W，Ni，Cr，Cu，Fe，Al，Nb，Mo，Ti的一者或两者以上的组合。
  7. 根据权利要求1所述的蒸发源，其中，所述涂层为Cu，Ti，Al2O3，MgO，BN，Si3N4，PBN，石墨，石英，陶瓷的一者或两者以上的组合。
  8. 根据权利要求1所述的蒸发源，其中，所述主体底部突出形成一子材料腔室，所述子材料腔室一侧设置有第五电极连接端，所述子材料腔室相对另一侧设置有第六电极连接端，所述第五电极连接端与所述第六电极连接端极性相反。
  9. 根据权利要求8所述的蒸发源，其中，所述子材料腔室位于所述主体底部中心位置。
  10. 一种蒸发源，其包括由导电材料制成的蒸发源本体；所述蒸发源本体包括：
    主体，所述主体内部开设有材料腔室；其中，
    所述主体外侧设置有第一电极连接端，以及与所述第一电极连接端极性相反的第二电极连接端，所述第一电极连接端与所述第二电极连接端通电后，所述主体自身导电产生热量以加热所述材料腔室内的材料。
  11. 根据权利要求10所述的蒸发源，其中，所述蒸发源本体还包括：
    盖体，盖合于所述主体表面以密闭所述材料腔室；所述盖体表面一体成形有至少一喷嘴；
    所述盖体外侧设置有第三电极连接端，以及与所述第三电极连接端极性相反的第四电极连接端，所述第三电极连接端与所述第四电极连接端通电后，所述盖体自身导电产生热量以加热所述喷嘴。
  12. 根据权利要求11所述的蒸发源，其中，
    所述第一电极连接端位于所述主体的第一端部，所述第二电极连接端位于所述主体相对所述主体的第一端部的第二端部；
    所述第三电极连接端位于所述盖体的第一端部，所述第四电极连接端位于所述盖体相对所述盖体的第一端部的第二端部。
  13. 根据权利要求12所述的蒸发源，其中，所述第一电极连接端与所述第三电极连接端同为正电极，所述第二电极连接端与所述第四电极连接端同为负电极；其中，
    所述第一电极连接端与所述第三电极连接端位于所述蒸发源本体的同一侧；
    所述第二电极连接端与所述第四电极连接端位于所述蒸发源本体的同一侧。
  14. 根据权利要求12所述的蒸发源，其中，
    所述主体的第一端部位于所述主体一端面的中心位置，所述主体的第二端部位于所述主体另一端面的中心位置；
    所述盖体的第一端部位于所述盖体一端面的中心位置，所述盖体的第二端部位于所述盖体另一端面的中心位置。
  15. 根据权利要求11所述的蒸发源，其中，所述主体与所述盖体采用高熔点材料制作，所述高熔点材料为W，Ni，Cr，Cu，Fe，Al，Nb，Mo，Ti的一者或两者以上的组合。
  16. 根据权利要求10所述的蒸发源，其中，所述主体底部突出形成一子材料腔室，所述子材料腔室一侧设置有第五电极连接端，所述子材料腔室相对另一侧设置有第六电极连接端，所述第五电极连接端与所述第六电极连接端极性相反。
  17. 根据权利要求16所述的蒸发源，其中，所述子材料腔室位于所述主体底部中心位置。
PCT/CN2017/106790 2017-08-17 2017-10-19 蒸发源 Ceased WO2019033536A1 (zh)

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Publication number Priority date Publication date Assignee Title
CN112981327A (zh) * 2019-12-12 2021-06-18 中国科学院大连化学物理研究所 一种真空热蒸镀用一体化蒸发源
CN114086125B (zh) * 2021-11-19 2024-03-01 乐金显示光电科技(中国)有限公司 玻璃基板蒸镀装置
CN114875364A (zh) * 2022-05-13 2022-08-09 武汉华星光电半导体显示技术有限公司 蒸发源装置
CN119932482B (zh) * 2025-04-07 2025-09-02 内蒙古科学技术研究院 一种用于蒸镀碲化铋膜的蒸发速率可控的热蒸镀装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791261A (en) * 1987-09-23 1988-12-13 International Business Machines Corporation Crucible for evaporation of metallic film
CN2632980Y (zh) * 2003-07-16 2004-08-11 上海大学 制作有机电致发光薄膜用的真空蒸发加热装置
JP2005097661A (ja) * 2003-09-24 2005-04-14 Kyosan Electric Mfg Co Ltd 成膜材料の加熱装置及び加熱方法
JP2009221496A (ja) * 2008-03-13 2009-10-01 Toshiba Corp 薄膜形成装置及び薄膜の製造方法
CN105296932A (zh) * 2015-10-30 2016-02-03 武汉华星光电技术有限公司 一种蒸镀机
CN105603365A (zh) * 2016-01-29 2016-05-25 深圳市华星光电技术有限公司 真空蒸镀加热装置
CN106906445A (zh) * 2017-03-29 2017-06-30 武汉华星光电技术有限公司 一种蒸发源

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237366A (ja) * 1985-08-12 1987-02-18 Hitachi Ltd 抵抗加熱真空蒸着装置
DE19607400C2 (de) * 1996-02-28 1999-09-09 Leybold Ag Verdampferschiffchen für eine Vorrichtung zur Beschichtung von Substraten
EP1967606A1 (en) * 2007-03-08 2008-09-10 Applied Materials, Inc. Evaporation crucible and evaporation apparatus with adapted evaporation characteristic
CN201751427U (zh) * 2010-03-25 2011-02-23 彩虹显示器件股份有限公司 一种线性蒸发源
CN106119782B (zh) * 2016-07-29 2019-03-15 京东方科技集团股份有限公司 一种蒸发源、蒸镀设备及oled显示器生产设备

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791261A (en) * 1987-09-23 1988-12-13 International Business Machines Corporation Crucible for evaporation of metallic film
CN2632980Y (zh) * 2003-07-16 2004-08-11 上海大学 制作有机电致发光薄膜用的真空蒸发加热装置
JP2005097661A (ja) * 2003-09-24 2005-04-14 Kyosan Electric Mfg Co Ltd 成膜材料の加熱装置及び加熱方法
JP2009221496A (ja) * 2008-03-13 2009-10-01 Toshiba Corp 薄膜形成装置及び薄膜の製造方法
CN105296932A (zh) * 2015-10-30 2016-02-03 武汉华星光电技术有限公司 一种蒸镀机
CN105603365A (zh) * 2016-01-29 2016-05-25 深圳市华星光电技术有限公司 真空蒸镀加热装置
CN106906445A (zh) * 2017-03-29 2017-06-30 武汉华星光电技术有限公司 一种蒸发源

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