CN112981327A - 一种真空热蒸镀用一体化蒸发源 - Google Patents

一种真空热蒸镀用一体化蒸发源 Download PDF

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CN112981327A
CN112981327A CN201911275234.6A CN201911275234A CN112981327A CN 112981327 A CN112981327 A CN 112981327A CN 201911275234 A CN201911275234 A CN 201911275234A CN 112981327 A CN112981327 A CN 112981327A
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crucible
electrode
evaporation
evaporation source
integrated
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刘生忠
焦玉骁
王辉
曹越先
杜敏永
段连杰
孙友名
王立坤
王开
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Dalian Institute of Chemical Physics of CAS
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Dalian Institute of Chemical Physics of CAS
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明提供一种真空蒸镀用一体化蒸发源，属于真空蒸镀技术领域，解决了一般热蒸发中加热不均匀性和热惯性大的问题，极大的简化了加热机构。本发明的真空蒸镀用坩埚组件主要包括坩埚和电极座两部分。其中坩埚两端为纯银电极涂层，电极间均为加热部分，镀有电热涂层。此坩埚组件结构简单，发热快速，发热体是坩埚本身，坩埚受热均匀，且热惯性小，能实现快速升温和降温，能实现蒸发速率的快速调控，达到蒸镀速率的稳定性。

Description

一种真空热蒸镀用一体化蒸发源
技术领域
本发明属于真空蒸镀技术领域，涉及热蒸镀蒸发源。
背景技术
在真空蒸镀过程中，需要通过蒸发源将蒸镀材料蒸发(或升华)为蒸气，蒸气在待蒸镀物体表面凝结后形成膜层。真空蒸镀在半导体行业中应用广泛。现有的蒸发设备的蒸发源通常是用电阻丝发热通过热传导或热辐射加热坩埚，使坩埚中的蒸镀材料蒸发或升华。这种蒸发源结构复杂，且坩埚受热不均匀，加热和降温缓慢，导致蒸发速率不可控，从而无法制备出高质量的薄膜，工艺重复性差。
发明内容
本发明的目的在于至少解决现有技术存在的技术问题之一，提出了一种真空热蒸镀用一体化蒸发源。其结构简单，热惯性小，可快速升温和降温，蒸发速率可快速调控，工艺稳定。
为实现上述目的及其他相关目的本发明提供一种真空热蒸镀用一体化蒸发源，所述蒸发源包括：坩埚和电极座。
所述坩埚包括坩埚本体、电极、镀电热膜区三部分。坩埚本身形状为圆柱形或锥形容器，材质可为石英，陶瓷等耐高温材料。坩埚两端为纯镀银电极涂层、作为电极的正极和负极。镀电热膜区为：除去坩埚表面电极，全部涂覆电热膜。电热膜的电阻在20-100Ω，为可电热膜材料，可电热膜材料可以为镍铬阻热材料或是石墨烯等碳热材料。
本发明的有益效果：本发明提供一种真空热蒸镀一体化蒸发源，包括坩埚和电极座，坩埚既是蒸发材料的容器，也是加热器。坩埚表面涂覆电热材料和电极。相比于现有技术，此一体化蒸发源，结构简单，制作方便、热惯性小，可快速升温和降温，蒸发速率可快速调控，工艺稳定。坩埚受热均匀，避免了通过热辐射和热传导过程中的热量损失，实现了温度快速调节。
附图说明
图1为坩埚示意图；
图2为电极座示意图；
图3.为真空蒸镀用一体化蒸发源示意图。
图中：1-电机座的正极部分，2-负机座的正极部分，3-电极座的支撑部分
具体实施方式
为了使本发明的目的、技术方案和优点更加清楚，下面结合具体实施例对本发明进行详细描述。
实施例
1、如图1所示，在石英材质坩埚表面周围涂覆电热膜。电热膜为电阻在20-100Ω的可电热膜材料，可电热膜材料可以为镍铬阻热材料或是石墨烯等碳热材料。坩埚本体的顶端和底部制备镀银电极，分别为电极的正极和负极。坩埚容积可为2-10ml。
2、如图2-3所示，电极座正极部分1为紫铜块，底部为铜弹簧柱。正极部分与坩埚的顶部镀银正电极接触，负极部分2与坩埚的底部镀银负电极接触，电极座正极部分1和负极部分2通过支撑部分3支撑。如图3所示，坩埚刚好卡入电极座中，电极座支撑部分3可为陶瓷等绝缘材质。

Claims (8)

1.一种真空蒸镀用一体化蒸发源，其特征在于，真空蒸镀用一体化蒸发源包括坩埚和电极座，所述坩埚可插入电极座。
2.根据权利要求1所述的真空蒸镀用一体化蒸发源，其特征在于，所述的坩埚包括坩埚本体、电极、镀电热膜区三部分。
3.根据权利要求1所述的真空蒸镀用一体化蒸发源，其特征在于，所述的电极座包括正极部分(1)、负极部分(2)、导线和支撑部分(3)电极座，电极座为圆筒形结构其中正负极部分材质为紫铜，支撑部分为陶瓷柱。
4.根据权利要求2所述的真空蒸镀用一体化蒸发源，其特征在于，所述坩埚本体为圆柱形或锥形容器，材质为耐高温材料，优选石英，陶瓷等。
5.根据权利要求2所述的真空蒸镀用一体化蒸发源，其特征在于电极为纯镀银电极涂层。
6.根据权利要求2所述的真空蒸镀用一体化蒸发源，其特征在于，坩埚两端分别为电极的正极和负极；所述镀电热膜区为：除去坩埚表面电极，全部涂覆电热膜。
7.根据权利要求6所述的真空蒸镀用一体化蒸发源，其特征在于，电热膜为电阻在20-100Ω的可电热膜材料，可电热膜材料为阻热材料或石墨烯等碳热材料。
8.根据权利要求7所述的真空蒸镀用一体化蒸发源，其特征在于，阻热材料为镍或铬，碳热材料为石墨烯。
CN201911275234.6A 2019-12-12 2019-12-12 一种真空热蒸镀用一体化蒸发源 Pending CN112981327A (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB934408A (en) * 1958-12-29 1963-08-21 Ibm Methods of depositing metals by evaporation
JP2009287087A (ja) * 2008-05-29 2009-12-10 Dainippon Printing Co Ltd 真空成膜装置
CN106365637A (zh) * 2016-08-31 2017-02-01 曹志冠 一种镀膜用C/h‑BN复合蒸发舟及其制造方法
US20170130327A1 (en) * 2015-11-11 2017-05-11 Tsinghua University Vacuum evaporation apparatus
CN107400859A (zh) * 2017-08-17 2017-11-28 武汉华星光电半导体显示技术有限公司 一种蒸发源

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB934408A (en) * 1958-12-29 1963-08-21 Ibm Methods of depositing metals by evaporation
JP2009287087A (ja) * 2008-05-29 2009-12-10 Dainippon Printing Co Ltd 真空成膜装置
US20170130327A1 (en) * 2015-11-11 2017-05-11 Tsinghua University Vacuum evaporation apparatus
CN106365637A (zh) * 2016-08-31 2017-02-01 曹志冠 一种镀膜用C/h‑BN复合蒸发舟及其制造方法
CN107400859A (zh) * 2017-08-17 2017-11-28 武汉华星光电半导体显示技术有限公司 一种蒸发源

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